TW202036181A - Forming method, system, lithography device, manufacturing method of article, and program - Google Patents

Abstract

To provide a technique advantageous for improving the formation accuracy of a pattern. A forming method for forming a patter on one layer on a substrate using a first device and a second device includes: a first measurement step of measuring a position of a mark formed on the substrate under a coordinate system of the first device; a first forming step of forming a first pattern on the substrate under the coordinate system of the first device, on the basis of first information indicating a target position coordinate to form the first pattern; a second measurement step of measuring a position of the mark under a coordinate system of the second device; and a second forming step of forming a second pattern on the substrate under the coordinate system of the second device, on the basis of second information indicating a target position coordinate to form the second pattern. In the second forming step, a position of the second pattern formed on the substrate is determined on the basis of a difference between the position of the mark measured in the first measurement step and the position of the mark measured in the second measurement step.

Description

Formation method, system, lithography device, article manufacturing method and program

The invention relates to a method, a system, a photolithography device, a method and a program for forming a pattern on a layer on a substrate.

In recent years, the size of substrates has increased particularly in liquid crystal display devices, and it has been sought to use substrates without waste. Therefore, a so-called MMG (Multi Model on Glass: mixed glass substrate) technology in which a plurality of devices are used to form a plurality of devices of different sizes on a single substrate has been proposed (see Patent Document 1). In such MMG technology, the overall size and position of a plurality of patterns formed by a plurality of devices on one layer on a substrate can be used as an evaluation index for the accuracy of pattern formation. Prior art literature Patent literature

Patent Document 1: Japanese Patent Application Publication No. 2005-092137

[The problem to be solved by the invention]

In many devices used in MMG technology, sometimes the pattern formation characteristics may cause individual differences. In this case, the positional relationship of the plurality of patterns respectively formed by the plurality of devices deviates from the target value (design value), and it may be difficult to accurately form the pattern on the substrate.

Therefore, the object of the present invention is to provide a technique advantageous for improving the accuracy of pattern formation. [Means used to solve the problem]

In order to achieve the above-mentioned object, the forming method as an aspect of the present invention is a method of forming a pattern on a layer on a substrate using a first device and a second device, and includes: a first measurement program, which is measured in the aforementioned first device The position of the mark formed on the aforementioned substrate; the first formation procedure, which is based on the target position of the first pattern to be formed, the aforementioned first pattern is formed on the aforementioned substrate by the aforementioned first device; the second measurement procedure, which It is used to measure the position of the mark in the second device; and the second forming procedure is to form a second pattern on the substrate in the second device; wherein, in the second forming procedure, based on the The difference between the position of the mark measured in a measurement procedure and the position of the mark measured in the second measurement procedure determines the position where the second device forms the second pattern on the substrate.

Hereinafter, the further objects and other aspects of the present invention will become clear by the preferred embodiments described with reference to the drawings. [Invention Effect]

According to the present invention, for example, it is possible to provide a technique advantageous for improving the accuracy of pattern formation.

Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. In addition, in each figure, the same members and elements are given the same reference signs, and repeated descriptions are omitted.

<First Embodiment> The forming system 100 (forming apparatus) related to the first embodiment of the present invention will be described. The forming system 100 of the present embodiment is a so-called MMG (Multi Model on Glass) technology that uses a plurality of photolithography apparatuses to form patterns at different positions in one layer (the same layer) on a substrate. system. Examples of the photolithography apparatus include an exposure apparatus that exposes a substrate to transfer a pattern of a mask to the substrate, an imprint apparatus that uses a mold to form a pattern of an imprint material on a substrate, and a pattern that uses a charged particle beam to form a pattern on the substrate. Devices, etc.

In addition, the "one layer on the substrate" applying the MMG technology related to the present invention may be, for example, a layer initially formed on a bare board that has not been patterned (the so-called first layer), but it is not limited to this, and may also be a second layer. After the layer. In this embodiment, an example in which a pattern (latent image pattern) is formed on one resist layer (photosensitive agent) on a substrate using a formation system 100 having a plurality of exposure devices 10 will be described. Here, as the substrate W, for example, a glass plate, a semiconductor wafer, etc. can be applied, but in this embodiment, an example in which a glass plate is used as the substrate W will be described. In addition, hereinafter, "a layer on the substrate" is sometimes simply referred to as "on the substrate".

FIG. 1 is a schematic diagram showing the overall configuration of a forming system 100 of the first embodiment. The forming system 100 may include a first exposure device 10 (first device), a second exposure device 20 (second device), a conveying unit 30 and a main control unit 40. The transport unit 30 transports the substrate W to the first exposure device 10 and the second exposure device 20. The main control unit 40 is composed of, for example, a computer with a CPU and a memory, and controls the entire formation system 100 in a unified manner, and can control the transmission of data and information between the first exposure device 10 and the second exposure device 20.

The first exposure apparatus 10 may include, for example, a pattern forming part 11 (first forming part), a mark forming part 12, a mark measuring part 13 (first measuring part), and a control part 14. The pattern forming part 11 forms the first pattern P1 on the substrate by transferring the pattern of the mask M to the substrate. For example, the pattern forming unit 11 forms the first pattern P1 in the first area on the substrate based on the first information (for example, design data) showing the coordinates of the target position where the first pattern P1 is to be formed. The mark forming unit 12 forms an alignment mark on the substrate based on information (for example, design data) showing the coordinates of the target position where the alignment mark is to be formed. The mark measuring section 13 measures the position of the alignment mark formed by the mark forming section 12. The control unit 14 is composed of, for example, a computer with a CPU, a memory, etc., and controls the pattern forming unit 11, the mark forming unit 12, and the mark measuring unit 13 in accordance with the device coordinate system (that is, controls each process performed by the first exposure device 10) . In this embodiment, the control unit 14 is provided separately from the main control unit 40, but it may be provided as a component of the main control unit 40.

The second exposure device 20 may include, for example, a pattern forming part 21 (second forming part), a mark measuring part 23 (second measuring part), and a control part 24. The second exposure apparatus 20 of this embodiment does not have a mark forming part, but a mark forming part may be provided. The pattern forming section 21 transfers the pattern of the mask M to the substrate to form the second pattern P2 on the substrate. For example, the pattern forming unit 21 forms a second area on a substrate different from the first area where the first pattern P1 is formed based on second information (for example, design data) showing the coordinates of the target position where the second pattern P2 is to be formed. The second pattern P2. The mark measuring section 23 measures the position of the mark AM formed by the mark forming section 12 of the first exposure device 10. The control unit 24 is composed of, for example, a computer including a CPU, a memory, etc., and controls the pattern forming unit 21 and the mark measurement unit 23 (that is, controls each process performed by the second exposure device 20) in accordance with the device coordinate system. In this embodiment, the control unit 24 is provided separately from the main control unit 40, but it may be provided as a component of the main control unit 40.

Next, a specific configuration example of the first exposure device 10 will be described. FIG. 2 is a diagram showing a configuration example of the first exposure device 10. Here, the second exposure device 20 is different from the first exposure device 10 in that the mark forming portion 12 is not provided, and the structure other than that is the same. That is, the pattern forming part 21 and the mark measuring part 23 of the second exposure device 20 can be configured the same as the pattern forming part 11 and the mark measuring part 13 of the first exposure device 10, respectively.

The first exposure apparatus 10 may include an illumination optical system 11 b, a mask mounting table 11 c, a projection optical system 11 d, and a substrate mounting table 11 e as the pattern forming section 11. The illumination optical system 11b illuminates the mask M using light from the light source 11a. The mask mounting table 11c is configured to be movable while holding the mask M. The projection optical system 11d projects the pattern formed on the mask M onto the substrate W. The substrate mounting table 11e is configured to be movable so as to hold the substrate W. In the first exposure apparatus 10 configured in this way, the mask M and the substrate W are respectively arranged at optically conjugate positions (the object surface and the image surface of the projection optical system 11d) via the projection optical system 11d. The projection optical system 11d The pattern of the mask M is projected onto the substrate. As a result, a latent image pattern can be formed on the resist layer on the substrate.

In addition, the above-mentioned mark forming part 12 and the mark measuring part 13 are provided in the first exposure apparatus 10 shown in FIG. 2. The mark forming part 12 is also called MF (Mark Former), and forms an alignment mark on the substrate by irradiating energy such as a charged particle beam on the substrate. Hereinafter, the alignment mark formed on the substrate by the mark forming portion 12 may be referred to as “mark AM”. The mark measuring section 13 detects the mark AM formed on the substrate by the mark forming section 12 to measure the position of the mark AM. For example, the mark measurement unit 13 includes an observer (off axis scope) having an image sensor and an optical element, and can be based on the position (XY direction) of the substrate W and the field of view of the mark AM in the observer. To measure the position of the marker AM.

[About pattern formation accuracy] Next, the formation of the first pattern P1, the second pattern P2, and the mark AM on the substrate by the forming system 100 (the first exposure device 10 and the second exposure device 20) will be described. 3 is a diagram showing the first pattern P1, the second pattern P2, and the mark AM formed on the substrate by the forming system 100.

The first pattern P1 may be formed by the pattern forming part 11 of the first exposure device 10 in the first area on the substrate. The second pattern P2 may be formed by the pattern forming part 21 of the second exposure device 20 in a second area on a substrate different from the first area where the first pattern P1 is formed. In the example shown in FIG. 3, the first pattern P1 and the second pattern P2 are each formed with the same size (size) on the substrate, but it is not limited to this, and may have different sizes and numbers from each other.

In addition, the mark forming portion 12 of the first exposure device 10 may form the mark AM at a plurality of locations in an area different from the area (first area, second area) where the first pattern P1 and the second pattern P2 are formed. In the example shown in FIG. 3, three marks AM1 to AM3 are formed near the corners of the substrate W so as not to be arranged on the same straight line. When the three marks AM1 to AM3 are formed on the substrate in this manner, based on the measurement results of the positions of the three marks AM1 to AM3, the X-direction offset, Y-direction offset, rotation, X-direction magnification, and Y direction magnification.

Here, the formation accuracy of the pattern formed by the forming system 100 (MMG technology) can be evaluated based on the overall size and position of the pattern formed on the substrate. The size of the entire pattern formed on the substrate can be defined by, for example, a first index TP (Total Pitch), which represents the length of the diagonal of the entire pattern formed on the substrate. In this embodiment, the lower right end point EP1 of the first pattern P1 formed on the substrate by the first exposure device 10 and the upper left end point of the second pattern P2 formed on the substrate by the second exposure device 20 are connected The length of the straight line of EP2 can be determined as the first index TP. On the other hand, the position of the entire pattern formed on the substrate can be specified by, for example, a second index CS (Center Shift), which indicates the position of the center point of the entire pattern formed on the substrate. In this embodiment, the center point of the straight line connecting the end point EP1 and the end point EP2 can be determined as the second index CS.

[Problems with conventional pattern formation] In the forming system 100 having a plurality of devices (the first exposure device 10, the second exposure device 20), it is sought to make the above-mentioned first index TP and the second index CS within the allowable range (desired range). A pattern is formed on the substrate. In the conventional method, in each of the first exposure device 10 and the second exposure device 20, the position of the mark AM formed on the substrate is measured, and the pattern (first pattern P1, The second pattern P2) is formed on the substrate. However, the formation accuracy of the mark AM formed by the mark forming portion 12 is insufficient, and the mark AM may not be formed on the target position coordinates (design position) on the substrate. Therefore, when a pattern is formed on the substrate based on the measurement result of the position of the mark AM, as shown in the following conventional example, depending on the formation accuracy of the mark AM, it may be difficult to accurately form the pattern on the substrate.

Conventional Example 1 FIG. 4 is a schematic diagram for explaining a decrease in pattern formation accuracy related to Conventional Example 1. FIG. In the conventional example 1, as shown in FIG. 4(a), there is shown an example in which three marks AM1 to AM3 are offset in one direction from the target position coordinate T _AM and are formed on the substrate. In this case, in the first exposure device 10, based on the measurement results of the positions of the marks AM1 to AM3, the marks AM1 to AM3 and the first pattern P1 become the target positional relationship (for example, the positional relationship in the design data) In this way, the first pattern P1 is formed (FIG. 4(b)). In addition, in the second exposure device 20, based on the measurement results of the positions of the marks AM1 to AM3, the second pattern P2 is formed such that the marks AM1 to AM3 and the second pattern P2 become the target positional relationship (FIG. 4(c)) . In this example, according to the deviation of the marks AM1 to AM3 from the target position coordinate T _AM , the first pattern P1 and the second pattern P2 are shifted from the target position coordinates T _P1 and T _{P2 to} be formed on the substrate. That is, in this example, the first index TP as the size of the entire pattern can be within the allowable range, but the second index CS as the position of the entire pattern cannot be within the allowable range.

Conventional Example 2 FIG. 5 is a schematic diagram for explaining the decrease in pattern formation accuracy related to Conventional Example 2. FIG. In conventional example 2, as shown in FIG. 5(a), it is shown that the marks AM1 to AM2 on the +Y direction side are offset from the target position coordinate T _AM to the +Y direction and are formed on the substrate in the -Y direction An example where the mark AM3 on the side is shifted from the target position coordinate T _{AM in} the −Y direction and formed on the substrate. In this case, in the first exposure device 10, based on the measurement results of the positions of the marks AM1 to AM3, the first pattern P1 is formed so that the marks AM1 to AM3 and the first pattern P1 have a target positional relationship (( in FIG. 5 b)). In addition, in the second exposure device 20, based on the measurement results of the positions of the marks AM1 to AM3, the second pattern P2 is formed so that the marks AM1 to AM3 and the second pattern P2 become the target positional relationship (FIG. 5(c)) . In this example, according to the deviation of the marks AM1 to AM3 from the target position coordinate T _AM , the first pattern P1 and the second pattern P2 are formed on the substrate by changing their magnification in the ±Y direction. That is, in this example, the second index CS as the position of the entire pattern can be within the allowable range, but the first index as the size of the entire pattern cannot be within the allowable range.

Conventional Example 3 FIG. 6 is a schematic diagram for explaining a decrease in pattern formation accuracy related to Conventional Example 3. FIG. In the conventional example 3, as shown in FIG. 6(a), there is shown an example in which three marks AM1 to AM3 are offset from the target position coordinate T _AM in one direction and formed on the substrate. In this case, in the first exposure device 10, the measurement results of the positions of the marks AM1 to AM3 are not used, but are based on information (design data) showing the coordinates of the target position where the first pattern P1 is to be formed. The first pattern P1 is formed under the coordinate system of the exposure device 10 (FIG. 6(b)). On the other hand, in the second exposure device 20, based on the measurement results of the positions of the marks AM1 to AM3, the second pattern P2 is formed so that the marks AM1 to AM3 and the second pattern P2 become the target positional relationship (FIG. 6(c) )). In this example, the first pattern P1 is not formed on the substrate according to the offset of the marks AM1~AM3, but the second pattern P2 is formed on the substrate according to the offset of the marks AM1~AM3 from the target position coordinate T _P1 . . That is, in this example, the positional relationship between the first pattern P1 and the second pattern P2 deviates from the target positional relationship, and the first index TP as the size of the entire pattern and the second index CS as the position of the entire pattern cannot be In the allowable range.

[Pattern Formation Process of this Embodiment] In this embodiment, in order to solve the above-mentioned problem in the conventional pattern formation, both the first pattern P1 and the second pattern P2 are based on information (for example, design data) showing the coordinates of the target position. The tie is formed on the substrate. Specifically, the first exposure device 10 forms the first pattern P1 on the substrate at the target position coordinates in the coordinate system of the first exposure device 10 based on the information showing the target position coordinates of the first pattern P1 to be formed. Similarly, the second exposure device 20 forms the second pattern P2 on the substrate at the target position coordinates in the coordinate system of the second exposure device 20 based on the information showing the target position coordinates of the second pattern P2 to be formed.

However, in a plurality of exposure apparatuses (the first exposure apparatus 10 and the second exposure apparatus 20) used in the forming system 100, there may be individual differences in the characteristics inherent to the apparatus. The characteristic means, for example, an error inherent in the device, such as an error in the device coordinate system, a placement error of a substrate transferred to the substrate mounting table, and the like. In this way, when the first exposure device 10 and the second exposure device 20 have individual differences in characteristics, the positions of the first pattern P1 formed by the first exposure device 10 and the second pattern P2 formed by the second exposure device 20 The relationship will deviate from the target location relationship. As a result, the first index TP as the size of the entire pattern and the second index CS as the position of the entire pattern may not be within the allowable range (especially the first index TP may not be within the allowable range).

Therefore, in the forming system 100 of the present embodiment, the position of the mark AM measured by the mark measuring unit 13 in the coordinate system of the first exposure device 10 and the position of the mark AM measured in the coordinate system of the second exposure device 20 are obtained. The difference in the position of the mark AM measured by the section 23. Then, based on the difference, the position where the second pattern P2 is formed on the substrate in the coordinate system of the second exposure device 20 is determined (corrected). Specifically, it is possible to correct the deviation of the positional relationship between the first pattern P1 and the second pattern P2 caused by the individual difference in the pattern formation characteristics between the first exposure device 10 and the second exposure device 20 , Decide where to form the second pattern P2 on the substrate. As a result, the first pattern and the second pattern can be formed on the substrate so that the first index TP and the second index CS are in the allowable range, respectively.

Hereinafter, the process of forming a pattern on a substrate (MMG technology) in the forming system 100 of the present embodiment will be described with reference to FIGS. 7 to 8. FIG. 7 is a flowchart showing a process of forming a pattern on a substrate related to this embodiment. Each program of the flowchart shown in FIG. 7 can be executed under the control of the main control unit 40. In addition, FIG. 8 is a schematic diagram showing how the mark AM, the first pattern P1, and the second pattern P2 are formed on the substrate over time.

In S11, the substrate W is transported to the first exposure apparatus 10 by the transport section 30. In S12, based on the information (for example, design data) showing the coordinates of the target position where the mark AM is to be formed, the mark forming portion 12 of the first exposure device 10 forms the mark on the substrate in the coordinate system of the first exposure device 10 AM (Mark Formation Procedure). That is, the target position coordinates in the coordinate system of the first exposure device 10 form the mark AM. Here, as described above, the formation accuracy of the mark AM formed by the mark forming portion 12 is insufficient, so the mark AM may not be formed on the target position coordinates, but formed at a position shifted from the target position coordinates. In this embodiment, three marks AM are formed on the substrate. The three marks AM have an X-direction offset component (an example of an arrangement offset component) and a Y-direction magnification component (one of the shape change components). Example) the formation error.

In S13, in the coordinate system of the first exposure device 10, the mark measuring section 13 of the first exposure device 10 measures the position of the mark AM formed on the substrate in the procedure of S12 (first measurement procedure). Thereby, the mark coordinate information C1 indicating the position coordinates of the mark AM in the coordinate system of the first exposure device 10 can be obtained. When it is assumed that the mark measuring section 13 does not produce a measurement error, the mark coordinate information C1 has an error component CM1 inherently generated by the first exposure device 10 and a formation error component CMX of the mark AM formed by the mark forming section 12. The error component CM1 includes, for example, the error of the device coordinate system in the first exposure device 10, the placement error of the substrate W placed on the substrate stage, etc., and can be offset in the X direction, offset in the Y direction, rotation (in the direction), The X-direction magnification and Y-direction magnification are expressed by multiple elements. In addition, the formation error component CMX of the mark AM may be represented by a plurality of elements similarly to the error component CM1, but in the present embodiment, it is composed of an X-direction offset and a Y-direction magnification.

In S14, based on the first information (for example, design data) showing the coordinates of the target position where the first pattern P1 is to be formed, the pattern forming portion 11 of the first exposure device 10 is set on the substrate under the coordinate system of the first exposure device 10 A first pattern P1 is formed thereon (first forming procedure). That is, the mark coordinate information C1 (measurement result of the mark measuring section 13) obtained in the procedure of S13 is not used, and the first pattern P1 is formed at the target position coordinates in the coordinate system of the first exposure device 10. According to this procedure, as shown in FIG. 8(a), although the error component CM1 inherent to the first exposure device 10 is generated with respect to the target position coordinates of the first information, the formation of the mark AM by the mark forming portion 12 can be omitted. The error component CMX forms the first pattern P1 on the substrate.

In S15, the substrate W is transported from the first exposure apparatus 10 to the second exposure apparatus 20 by the transport section 30, and the mark coordinate information C1 obtained by the first exposure apparatus 10 in the procedure of S13 is transmitted (notified) to the first二 Exposure device 20. In this embodiment, the transfer of the mark coordinate information C1 is performed when the substrate W is transferred to the second exposure device 20, but it is not limited to this, as long as it is performed between S13 and S17.

In S16, in the coordinate system of the second exposure device 20, the mark measuring section 23 of the second exposure device 20 measures the mark AM formed on the substrate by the mark forming section 12 of the first exposure device 10 in the procedure of S12. Position (second measurement procedure). Thereby, the mark coordinate information C2 indicating the position coordinates of the mark AM in the coordinate system of the second exposure device 20 can be obtained. When it is assumed that the mark measuring section 23 does not produce a measurement error, the mark coordinate information C2 has an error component CM2 inherently generated by the second exposure device 20 and a formation error component CMX of the mark AM formed by the mark forming section 12. The error component CM2 includes, for example, the error of the device coordinate system in the second exposure device 20, the placement error of the substrate W placed on the substrate stage, etc., and can be offset in the X direction, offset in the Y direction, rotation (theta direction), The X-direction magnification and Y-direction magnification are expressed by multiple elements.

In S17, the correction value CV used when the second pattern P2 is formed on the substrate in the coordinate system of the second exposure device 20 is obtained. The correction value CV is used to correct (reduce) the individual difference between the characteristics of the first exposure device 10 and the second exposure device 20, that is, the difference between the inherent error of the first exposure device 10 and the inherent error of the second exposure device 20, and correct The value CV is obtained by the following formula (1). In formula (1), the difference between the mark coordinate information C1 obtained by the first exposure device 10 in the procedure of S13 and the mark coordinate information C2 obtained by the second exposure device 20 in the procedure of S16 is obtained as a correction Value CV. The mark coordinate information C1 and the mark coordinate information C2 together include the formation error component CMX of the mark AM. Therefore, as a result, the correction value CV is the difference between the error component CM1 inherently generated by the first exposure device 10 and the error component CM2 inherently generated by the second exposure device 20.

In S18, based on the second information (for example, design data) showing the coordinates of the target position where the second pattern P2 is to be formed, in the coordinate system of the second exposure device 20, the pattern forming section 21 of the second exposure device 20 The second pattern P2 is formed on the substrate (second formation procedure). At this time, based on the correction value CV obtained in the program of S17, the position where the second pattern P2 is formed on the substrate in the coordinate system of the second exposure device 20 is determined. Specifically, the correction value CV is used to correct the target position coordinates of the second information, and based on the position coordinates thus obtained, the second pattern P2 is formed on the substrate. The error of the second pattern P2 formed on the substrate in this way, as shown in FIG. 8(b), is only the error component obtained by subtracting the correction value CV from the inherent error component CM2 of the second exposure device 20 CM1. That is, the same error component CM1 can be set for the first pattern P1 and the second pattern P2, and the individual difference in the characteristics of the first exposure device 10 and the second exposure device 20 can be corrected (reduced). As a result, the first index TP, which is the size of the entire pattern, and the second index CS, which is the position of the entire pattern, can each be within an allowable range. In addition, in S19, the substrate W is carried out from the second exposure apparatus 20 by the transport section 30.

As described above, the forming system 100 of this embodiment determines the difference between the mark coordinate information C1 obtained by the first exposure device 10 and the mark coordinate information C2 obtained by the second exposure device 20 to determine that the second exposure device 20 sets the substrate On the position where the second pattern P2 is formed. Thereby, it is possible to correct (reduce) the individual difference in the characteristics of the first exposure device 10 and the second exposure device 20, and it is possible to improve the formation accuracy of the pattern formed by the MMG technology.

<Implementation of the manufacturing method of the article> The method of manufacturing an article according to the embodiment of the present invention is suitable for manufacturing articles such as micro devices such as semiconductor devices and elements having a fine structure, for example. The method of manufacturing an article of this embodiment includes: a procedure of forming a latent image pattern on a photosensitive agent coated on a substrate using the above-mentioned exposure device (a procedure of exposing the substrate) and a substrate on which the latent image pattern is formed in the procedure Development (processing) procedures. This manufacturing method also includes other well-known procedures (oxidation, film formation, vapor deposition, doping, planarization, etching, resist stripping, dicing, bonding, packaging, etc.). Compared with the conventional method, the manufacturing method of the article of the present embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article.

<Other Examples> The present invention can also be implemented by the following processing, that is, through a network or various storage media, a program that realizes one or more functions of the above embodiments is provided to a system or device, and one or more processors in the computer of the system or device read Exit and execute the program. In addition, it can also be realized by a circuit (for example, ASIC) that realizes more than one function.

The preferred embodiments of the present invention have been described above, but of course the present invention is not limited to these embodiments, and various modifications and changes can be made within the scope of the gist.

10: The first exposure device 11: Pattern forming part 12: Mark formation part 13: Mark measurement department 20: The second exposure device 21: Pattern forming part 23: Marking measurement department 30: Transport Department 40: Main Control Department 100: formation system

[Fig. 1] is a schematic diagram showing the overall structure of the forming system. [Fig. 2] A diagram showing a configuration example of a first exposure device. [Fig. 3] is a diagram showing a first pattern P1, a second pattern P2, and a mark AM formed on a substrate. [Fig. 4] is a schematic diagram for explaining the decrease of the pattern formation accuracy related to the conventional example 1. [Fig. [Fig. 5] is a schematic diagram for explaining the decrease in pattern formation accuracy related to Conventional Example 2. [Fig. [FIG. 6] It is a schematic diagram for explaining the decline of the pattern formation accuracy concerning Conventional Example 3. FIG. [Fig. 7] is a flowchart showing a process of forming a pattern on a substrate. [Fig. 8] is a schematic diagram showing a state in which the mark AM, the first pattern P1, and the second pattern P2 are formed on the substrate over time.

Claims (12)

A forming method, which uses a first device and a second device to form a pattern on a layer on a substrate, comprising: The first measurement program, which is to measure the position of the mark formed on the substrate in the first device; A first forming procedure, which is to form the first pattern on the substrate in the first device based on the target position where the first pattern is to be formed; The second measurement program, which is to measure the position of the aforementioned mark on the aforementioned second device; and A second forming process, which is to form a second pattern on the substrate in the second device; Wherein, in the foregoing second forming procedure, the determination is made in the second device based on the difference between the position of the mark measured in the first measurement procedure and the position of the mark measured in the second measurement procedure. The position where the second pattern is formed on the substrate. According to the formation method of claim 1, in which, In the second forming process, the deviation in the positional relationship between the first pattern and the second pattern caused by the difference in the characteristics of the first device and the second device is corrected, and the correction is performed based on the difference The position where the second device forms the second pattern on the substrate. According to the formation method of claim 1, in which, In the foregoing second forming procedure, the foregoing second pattern is formed on the foregoing substrate in the foregoing second device based on a position obtained by correcting the target location of the foregoing second pattern to be formed using the foregoing difference. According to the formation method of claim 1, in which, In the foregoing first forming procedure, the measurement result in the foregoing first measurement procedure is not used to form the foregoing first pattern on the foregoing substrate. According to the formation method of claim 1, in which, In the aforementioned first forming procedure, the aforementioned first pattern is formed at a target position where the aforementioned first pattern is to be formed on the aforementioned substrate by the aforementioned first device. According to the formation method of claim 1, in which, Before the first measurement procedure, the forming method includes a procedure of forming the mark on the substrate by the first device. According to the formation method of claim 1, in which, The first pattern and the second pattern are formed in different regions in the same layer on the substrate. According to the formation method of claim 1, in which, The foregoing forming method further includes a program of transmitting the measurement result in the foregoing first measurement program from the foregoing first device to the foregoing second device. A method of manufacturing an article, including: A forming procedure, which is a person who uses the forming method according to any one of claims 1 to 8 to form a pattern on a substrate; and A processing procedure, which is a person who processes the aforementioned substrate on which a pattern is formed in the aforementioned forming procedure; Among them, the article is manufactured from the aforementioned substrate processed in the aforementioned processing procedure. A program that causes a computer to execute the procedures of the formation method according to any one of claims 1 to 8. A system for patterning a layer on a substrate, including: A first device having a first measuring part and a first forming part, the first measuring part measures the position of the mark formed on the substrate, and the first forming part is based on the target position where the first pattern is to be formed on the substrate Forming the aforementioned first pattern; and A second device having a second measuring part and a second forming part, the second measuring part measures the position of the mark, and the second forming part forms a second pattern on the substrate; Wherein, the second forming part determines that the second device is formed on the substrate based on the difference between the position of the mark measured by the first measuring part and the position of the mark measured by the second measuring part. The position of the aforementioned second pattern. A photolithography apparatus, which forms a second pattern on a layer on a substrate on which a first pattern is formed by a first apparatus, comprising: A measuring section that measures the position of the mark formed on the substrate in the lithography apparatus; and A forming part, which forms the aforementioned second pattern on the aforementioned substrate; The forming part determines the position where the second pattern is formed on the substrate based on the difference between the position of the mark measured by the first device and the position of the mark measured by the measuring part.

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