KR102658787B1 - Forming method, system, lithography apparatus, article manufacturing method, and program - Google Patents

Abstract

An advantageous technology is provided to improve pattern formation precision.
A forming method of forming a pattern in one layer on a substrate using a first device and a second device includes a first measurement step of measuring the position of a mark formed on the substrate in the first device, and forming a first pattern. A first forming step of forming the first pattern on the substrate in the first device, based on the target position at which the mark should be formed, and a second measurement step of measuring the position of the mark in the second device. and a second forming step of forming a second pattern on the substrate in the second device, wherein, in the second forming step, the position of the mark measured in the first measurement step and the second measurement step are performed. Based on the difference in the positions of the marks measured in the process, the position of the second pattern formed on the substrate in the second device is determined.

Description

Forming method, system, lithographic apparatus, article manufacturing method, and program {FORMING METHOD, SYSTEM, LITHOGRAPHY APPARATUS, ARTICLE MANUFACTURING METHOD, AND PROGRAM}

The present invention relates to forming methods, systems, lithographic apparatus, methods of manufacturing articles, and programs for forming a pattern in a layer on a substrate.

In recent years, especially in liquid crystal display devices, the size of the substrate has been increasing, and there is a demand for effective and appropriate use of the substrate. For this reason, a technology called MMG (Multi Model on Glass) has been proposed in which devices of a plurality of different sizes are formed on a single substrate using a plurality of devices (see Patent Document 1). In such MMG technology, the dimensions and positions of multiple patterns formed in one layer on a substrate by multiple devices can be used as an evaluation index of pattern formation precision.

Japanese Patent Publication No. 2005-092137

In a plurality of devices used in MMG technology, individual differences may occur in pattern formation characteristics. In this case, the positional relationship of the plurality of patterns formed by the plurality of devices may deviate from the target value (design value), making it difficult to form the pattern on the substrate with high precision.

Therefore, the purpose of the present invention is to provide an advantageous technology for improving pattern formation precision.

In order to achieve the above object, a forming method as an aspect of the present invention is a forming method of forming a pattern in one layer on a substrate using a first device and a second device, wherein the first device uses the first device to form a pattern on the substrate. a first measurement step of measuring the position of the mark formed in the first forming step of forming the first pattern on the substrate in the first device based on a target position at which the first pattern should be formed; A second measurement step of measuring the position of the mark in the second device, and a second forming step of forming a second pattern on the substrate in the second device, wherein the second forming step includes: Based on the difference between the position of the mark measured in the first measurement process and the position of the mark measured in the second measurement process, the position of the second pattern formed on the substrate in the second device is determined. It is characterized by decision-making.

Additional objects or other aspects of the present invention will be revealed by the preferred embodiments described below with reference to the accompanying drawings.

According to the present invention, an advantageous technology can be provided, for example, to improve pattern formation precision.

1 is a schematic diagram showing the overall configuration of the forming system.
FIG. 2 is a diagram showing a configuration example of a first exposure apparatus.
FIG. 3 is a diagram showing a first pattern P1, a second pattern P2, and a mark AM formed on a substrate.
Figure 4 is a schematic diagram for explaining the decrease in pattern formation precision according to Conventional Example 1.
Figure 5 is a schematic diagram for explaining the decrease in pattern formation precision according to Conventional Example 2.
Figure 6 is a schematic diagram for explaining the decrease in pattern formation precision according to Conventional Example 3.
Fig. 7 is a flowchart showing the pattern formation process on the substrate.
Figure 8 is a schematic diagram showing over time how the mark AM, the first pattern P1, and the second pattern P2 are formed on the substrate.

BEST MODE FOR CARRYING OUT THE INVENTION Suitable embodiments of the present invention will be described below with reference to the accompanying drawings. In addition, in each drawing, the same members or elements are given the same reference numbers, and overlapping descriptions are omitted.

<First embodiment>

The forming system 100 (forming apparatus) of the first embodiment according to the present invention will be described. The forming system 100 of this embodiment uses the so-called Multi Model on Glass (MMG) technology, which uses a plurality of lithographic devices to form patterns at different positions in one layer (same layer) on a substrate. It is a running system. Lithographic devices include, for example, an exposure device that exposes a substrate and transfers a mask pattern to the substrate, an imprint device that forms a pattern of an imprint material on a substrate using a mold, and a pattern that forms a pattern on a substrate using a charged particle beam. A drawing device that does this can be mentioned.

In addition, “one layer on the substrate” to which the MMG technology according to the present invention is applied may be, for example, a layer formed initially on a bare substrate on which a pattern has not yet been formed (the so-called first layer), but is limited thereto. It does not work, and it can be done after the second floor. In this embodiment, an example of forming a pattern (latent pattern) in one resist layer (photosensitive agent) on a substrate using the forming system 100 having a plurality of exposure devices 10 will be described. Here, for example, a glass plate or a semiconductor wafer can be used as the substrate W. However, in this embodiment, an example of using a glass plate as the substrate W will be described. In addition, hereinafter, “one layer on the substrate” may simply be referred to as “on the substrate.”

Fig. 1 is a schematic diagram showing the overall configuration of the forming system 100 of the first embodiment. The forming system 100 may include a first exposure device 10 (first device), a second exposure device 20 (second device), a transfer unit 30, and a main control unit 40. The transport unit 30 transports the substrate W to the first exposure apparatus 10 and the second exposure apparatus 20 . The main control unit 40 is composed of, for example, a computer with a CPU or memory, and comprehensively controls the entire forming system 100, as well as the first exposure apparatus 10 and the second exposure apparatus 20. ) can control the transmission of data or information between the liver.

The first exposure apparatus 10 may include, for example, a pattern forming part 11 (first forming part), a mark forming part 12, a mark measuring part 13 (first measuring part), and a control part 14. You can. The pattern forming unit 11 forms the first pattern P1 on the substrate by transferring the pattern of the mask M onto the substrate. For example, the pattern forming unit 11 forms the first pattern P1 in the first area on the substrate based on first information (e.g., design data) indicating target position coordinates at which the first pattern P1 must be formed. . The mark forming unit 12 forms an alignment mark on the substrate based on information (for example, design data) indicating target position coordinates at which the alignment mark should be formed. The mark measurement unit 13 measures the position of the alignment mark formed by the mark forming unit 12. The control unit 14 is configured by, for example, a computer having a CPU or memory, and controls the pattern forming unit 11, the mark forming unit 12, and the mark measuring unit 13 according to the device coordinate system (i.e. Controls each process by the first exposure device 10). In this embodiment, the control unit 14 is provided as a separate body from the main control unit 40, but may be provided as a component of the main control unit 40.

The second exposure apparatus 20 may include, for example, a pattern forming part 21 (second forming part), a mark measuring part 23 (second measuring part), and a control part 24. Although a mark forming part is not provided in the second exposure apparatus 20 of this embodiment, a mark forming part may be provided. The pattern forming unit 21 forms a second pattern P2 on the substrate by transferring the pattern of the mask M onto the substrate. For example, the pattern forming unit 21 is different from the first area where the first pattern P1 is formed, based on second information (e.g., design data) indicating target position coordinates where the second pattern P2 must be formed. A second pattern P2 is formed in the second area on the substrate. The mark measurement unit 23 measures the position of the mark AM formed by the mark forming unit 12 of the first exposure apparatus 10 . The control unit 24 is configured by, for example, a computer having a CPU or memory, and controls the pattern forming unit 21 and the mark measuring unit 23 according to the device coordinate system (i.e., the second exposure apparatus 20) (controlling each processing by ). In this embodiment, the control unit 24 is provided as a separate body from the main control unit 40, but may be provided as a component of the main control unit 40.

Next, a specific configuration example of the first exposure apparatus 10 will be described. FIG. 2 is a diagram showing a configuration example of the first exposure apparatus 10. Here, the second exposure apparatus 20 is different from the first exposure apparatus 10 in that the mark forming portion 12 is not provided, but other configurations may be the same. That is, the pattern forming unit 21 and the mark measuring unit 13 of the second exposure apparatus 20 may be configured similarly to the pattern forming unit 11 and the mark forming unit 23 of the first exposure apparatus 10, respectively. You can.

The first exposure apparatus 10 may include an illumination optical system 11b, a mask stage 11c, a projection optical system 11d, and a substrate stage 11e as the pattern forming unit 11. The illumination optical system 11b illuminates the mask M using light from the light source 11a. The mask stage 11c holds the mask M and is configured to be movable. The projection optical system 11d projects the pattern formed on the mask M onto the substrate W. The substrate stage 11e holds the substrate W and is configured to be movable. In the first exposure apparatus 10 configured as described above, the mask M and the substrate W are respectively disposed at optically conjugate positions (object surface and image surface of the projection optical system 11d) through the projection optical system 11d, and the projection optical system ( By 11d), the pattern of the mask M is projected onto the substrate. This allows a latent pattern to be formed in the resist layer on the substrate.

Additionally, the first exposure apparatus 10 shown in FIG. 2 is provided with the above-mentioned mark forming section 12 and the mark measuring section 13. The mark forming portion 12 is also called MF (Mark Former) and forms an alignment mark on the substrate by irradiating energy such as a charged particle beam onto the substrate. Hereinafter, the alignment mark formed on the substrate by the mark forming unit 12 may be referred to as “mark AM.” The mark measurement unit 13 detects the mark AM formed on the substrate by the mark forming unit 12 and measures the position of the mark AM. For example, the mark measurement unit 13 includes a scope (off-axis scope) having an image sensor and an optical element, and based on the position of the substrate W (XY direction) and the position of the mark AM within the field of view of the scope, The position of mark AM can be measured.

[About pattern formation precision]

Next, the formation of the first pattern P1, the second pattern P2, and the mark AM on the substrate by the formation system 100 (the first exposure apparatus 10 and the second exposure apparatus 20) will be described. . FIG. 3 is a diagram showing a first pattern P1, a second pattern P2, and a mark AM formed on a substrate by the forming system 100.

The first pattern P1 may be formed in the first area on the substrate by the pattern forming unit 11 of the first exposure apparatus 10. The second pattern P2 may be formed by the pattern forming unit 21 of the second exposure apparatus 20 in a second area on the substrate that is different from the first area where the first pattern P1 is formed. In the example shown in FIG. 3, the first pattern P1 and the second pattern P2 are formed one by one with the same dimensions (size) on the substrate, but the pattern is not limited thereto and may have different dimensions and numbers.

In addition, the mark AM is in an area different from the area (first area, second area) where the first pattern P1 and the second pattern P2 are formed by the mark forming unit 12 of the first exposure apparatus 10. It may be formed in multiple locations. In the example shown in FIG. 3, three marks AM1 to AM3 are formed near the corners of the substrate W so that they are not arranged on the same straight line. If three marks AM1 to AM3 are formed on the substrate in this way, the X-direction shift, Y-direction shift, rotation, X-direction magnification, and Y-direction magnification can be obtained based on the measurement results of the positions of the three marks AM1 to AM3. .

Here, the formation precision of the pattern by the formation system 100 (MMG technology) can be evaluated based on the dimensions and position of the entire pattern formed on the substrate. The dimensions of the entire pattern formed on the substrate can be defined, for example, by the first index TP (Total Pitch), which represents the length of the diagonal line in the entire pattern formed on the substrate. In this embodiment, the lower right end point EP1 of the first pattern P1 formed on the substrate by the first exposure apparatus 10 and the left side of the second pattern P2 formed on the substrate by the second exposure apparatus 20 The length of a straight line connecting the upper end point EP2 can be determined as the first index TP. Meanwhile, the position of the entire pattern formed on the substrate may be defined, for example, by a second indicator CS (Center Shift) indicating the position of the center point of the entire pattern formed on the substrate. In this embodiment, the center point of a straight line connecting the end points EP1 and the end points EP2 can be determined as the second index CS.

[Challenges in conventional pattern formation]

In the forming system 100 having a plurality of devices (the first exposure device 10 and the second exposure device 20), the above-described first index TP and second index CS are each within the allowable range (desired range). It is required to form a pattern on a substrate. In the conventional method, the position of the mark AM formed on the substrate is measured in each of the first exposure apparatus 10 and the second exposure apparatus 20, and a pattern (first pattern P1, A second pattern P2) was formed on the substrate. However, the accuracy of forming the mark AM by the mark forming unit 12 is insufficient, and there are cases where the mark AM is not formed at the target position coordinate (design position) on the substrate. Therefore, if a pattern is formed on the substrate based on the measurement results of the position of the mark AM, it becomes difficult to form the pattern on the substrate with high precision depending on the formation accuracy of the mark AM, as shown in the following conventional example. You can.

Conventional example 1

Figure 4 is a schematic diagram for explaining the decrease in pattern formation accuracy according to Conventional Example 1. Conventional Example 1 shows an example in which three marks AM1 to AM3 are formed on a substrate by shifting in one direction from the target position coordinate T _AM , as shown in FIG. 4(a). In this case, in the first exposure apparatus 10, based on the measurement results of the positions of the marks AM1 to AM3, the marks AM1 to AM3 and the first pattern P1 have a target position relationship (for example, a position relationship in the design data). Form the first pattern P1 so that (Figure 4(b)). Additionally, in the second exposure apparatus 20, based on the measurement results of the positions of marks AM1 to AM3, the second pattern P2 is formed so that the marks AM1 to AM3 and the second pattern P2 have a target positional relationship ((c in FIG. 4 )). In this example, the first pattern P1 and the second pattern P2 are formed on the substrate by shifting from the target position coordinates T _P1 and T _P2 depending on the shift from the target position coordinates T _AM of the marks AM1 to AM3. That is, in this example, the first index TP, as the dimension of the entire pattern, can be made to fall within the allowable range, but the second index CS, as the position of the entire pattern, cannot be made to fall within the allowable range.

Conventional example 2

Figure 5 is a schematic diagram for explaining the decrease in pattern formation accuracy according to Conventional Example 2. In Conventional Example 2, as shown in FIG. 5(a), marks AM1 to AM2 on the +Y direction side are formed on the substrate by shifting from the target position coordinate T _AM in the +Y direction, and the mark on the -Y direction side is This shows an example in which AM3 is formed on a substrate by shifting from the target position coordinate T _AM to the -Y direction. In this case, the first exposure apparatus 10 forms the first pattern P1 so that the marks AM1 to AM3 and the first pattern P1 have a target position relationship based on the measurement results of the positions of the marks AM1 to AM3 (Figure 5(b)). Additionally, in the second exposure apparatus 20, based on the measurement results of the positions of marks AM1 to AM3, the second pattern P2 is formed so that the marks AM1 to AM3 and the second pattern P2 have a target positional relationship ((c in FIG. 5 )). In this example, depending on the shift from the target position coordinates T _AM of the marks AM1 to AM3, the magnification of the first pattern P1 and the second pattern P2 in the ±Y direction is changed and formed on the substrate. That is, in this example, the second index CS as the position of the entire pattern can be brought into the allowable range, but the first index as the dimension of the entire pattern cannot be made to fall within the allowable range.

Conventional example 3

Figure 6 is a schematic diagram for explaining the decrease in pattern formation accuracy according to Conventional Example 3. Conventional Example 3 shows an example in which three marks AM1 to AM3 are formed on a substrate by shifting in one direction from the target position coordinate T _AM , as shown in FIG. 6(a). In this case, the first exposure apparatus 10 does not use the measurement results of the positions of marks AM1 to AM3, but uses the first exposure apparatus 10 based on information (design data) indicating the target position coordinates at which the first pattern P1 should be formed. A first pattern P1 is formed under the coordinate system of the exposure apparatus 10 (FIG. 6(b)). Meanwhile, in the second exposure apparatus 20, based on the measurement results of the positions of marks AM1 to AM3, the second pattern P2 is formed so that the marks AM1 to AM3 and the second pattern P2 have a target positional relationship (see Figure 6). c)). In this example, the first pattern P1 is formed on the substrate without depending on the shift of marks AM1 to AM3, but the second pattern P2 is formed on the substrate by shifting from the target position coordinate T _P1 depending on the shift of marks AM1 to AM3. is formed. That is, in this example, the positional relationship between the first pattern P1 and the second pattern P2 deviates from the target positional relationship, so that the first index TP as the dimension of the entire pattern and the second index CS as the position of the entire pattern are within the allowable range. It becomes impossible.

[Pattern formation processing of this embodiment]

In the present embodiment, in order to solve the problems in conventional pattern formation described above, each exposure device uses both the first pattern P1 and the second pattern P2 based on information (e.g., design data) indicating target position coordinates. It is formed on a substrate under a coordinate system of . Specifically, the first exposure apparatus 10, based on information indicating the target position coordinates at which the first pattern P1 must be formed, displays the first image on the substrate at the target position coordinates in the coordinate system of the first exposure apparatus 10. 1 Form pattern P1. Likewise, the second exposure apparatus 20 creates a second pattern on the substrate at the target position coordinates in the coordinate system of the second exposure apparatus 20, based on information indicating the target position coordinates at which the second pattern P2 must be formed. Forms P2.

However, in a plurality of exposure apparatuses (the first exposure apparatus 10 and the second exposure apparatus 20) used in the forming system 100, individual differences may occur in the characteristics inherent to the apparatus. Characteristics refer to errors inherent in the device, such as errors in the device coordinate system and placement errors of the substrate transported on the substrate stage. In this way, when individual differences in characteristics occur between the first exposure apparatus 10 and the second exposure apparatus 20, the first pattern P1 formed by the first exposure apparatus 10 and the second pattern formed by the second exposure apparatus 20 The positional relationship of P2 deviates from the target positional relationship. As a result, the first index TP as the dimension of the entire pattern and the second index CS as the position of the entire pattern may become insufficient (in particular, the first index TP may become insufficient).

Therefore, in the forming system 100 of this embodiment, the position of the mark AM measured by the mark measurement unit 13 under the coordinate system of the first exposure apparatus 10 and the mark measurement unit ( Calculate the difference in the position of mark AM measured by 23). Then, based on the difference, the position of the second pattern P2 formed on the substrate under the coordinate system of the second exposure apparatus 20 is determined (corrected). Specifically, the substrate is configured so that the misalignment of the positional relationship between the first pattern P1 and the second pattern P2 due to individual differences in pattern formation characteristics in the first exposure apparatus 10 and the second exposure apparatus 20 is corrected. The position of the second pattern P2 formed on the image can be determined. By this, the first pattern and the second pattern can be formed on the substrate so that the first index TP and the second index CS each fall within the allowable range.

Below, the pattern formation process (MMG technology) on the substrate in the formation system 100 of this embodiment is explained with reference to FIGS. 7 and 8. Fig. 7 is a flowchart showing pattern formation processing on a substrate according to this embodiment. Each process in the flowchart shown in FIG. 7 can be executed under control by the main control unit 40. Additionally, FIG. 8 is a schematic diagram showing over time how the mark AM, the first pattern P1, and the second pattern P2 are formed on the substrate.

In S11, the substrate W is transported to the first exposure apparatus 10 by the transport unit 30.

In S12, the mark forming unit 12 of the first exposure apparatus 10 is placed under the coordinate system of the first exposure apparatus 10 based on information (e.g., design data) indicating the target position coordinates at which the mark AM should be formed. A mark AM is formed on the substrate (mark forming process). That is, a mark AM is formed at the target position coordinates in the coordinate system of the first exposure apparatus 10. Here, since the accuracy of forming the mark AM by the mark forming unit 12 is insufficient as described above, the mark AM may not be formed at the target position coordinates but may be formed at a position shifted from the target position coordinates. In this embodiment, three marks AM are formed on a substrate, and the three marks AM include a shift component in the X direction (an example of an alignment misalignment component) and a magnification component in the Y direction (an example of a shape change component). It is assumed that a formation error occurred.

In S13, the position of the mark AM formed on the substrate in the step S12 is measured by the mark measurement unit 13 of the first exposure device 10 under the coordinate system of the first exposure device 10 (first measurement step) . Thereby, mark coordinate information C1 indicating the position coordinate of mark AM in the coordinate system of the first exposure apparatus 10 can be obtained. Assuming that no measurement error occurs in the mark measurement unit 13, this mark coordinate information C1 contains the error component CM1 uniquely generated in the first exposure apparatus 10 and the formation error of mark AM by the mark forming unit 12. It has component CMX. The error component CM1 includes, for example, an error in the device coordinate system in the first exposure apparatus 10, an error in the placement of the substrate W on the substrate stage, etc., and includes X-direction shift, Y-direction shift, and rotation (θ direction). ), can be expressed as multiple elements of X-direction magnification and Y-direction magnification. Additionally, the formation error component CMX of the mark AM can also be expressed as a plurality of elements like the error component CM1, but in this embodiment, it includes an X-direction shift and a Y-direction magnification.

In S14, pattern formation of the first exposure apparatus 10 under the coordinate system of the first exposure apparatus 10 based on first information (e.g., design data) indicating target position coordinates at which the first pattern P1 must be formed. A first pattern P1 is formed on the substrate by the part 11 (first forming process). That is, the first pattern P1 is formed at the target position coordinates in the coordinate system of the first exposure apparatus 10 without using the mark coordinate information C1 (measurement result in the mark measurement unit 13) obtained in the step S13. . According to this process, as shown in FIG. 8(a), an inherent error component CM1 in the first exposure apparatus 10 is generated with respect to the target position coordinate of the first information, but the mark forming section 12 ) The first pattern P1 can be formed on the substrate without depending on the formation error component CMX of the mark AM.

In S15, the substrate W is transported from the first exposure apparatus 10 to the second exposure apparatus 20 by the transport unit 30, and the mark coordinate information obtained by the first exposure apparatus 10 in the step S13 C1 is transmitted (notified) to the second exposure apparatus 20. In this embodiment, the transfer of the mark coordinate information C1 is performed when transferring the substrate W to the second exposure apparatus 20, but it is not limited to this and may be performed between S13 and S17.

In S16, the mark measuring unit 23 of the second exposure apparatus 20 is used under the coordinate system of the second exposure apparatus 20, and in the process of S12, the mark forming unit 12 of the first exposure apparatus 10 is used on the substrate. The position of the mark AM formed is measured (second measurement process). Thereby, mark coordinate information C2 indicating the position coordinates of mark AM in the coordinate system of the second exposure apparatus 20 can be obtained. Assuming that no measurement error occurs in the mark measurement unit 23, this mark coordinate information C2 includes the error component CM2 uniquely generated in the second exposure apparatus 20 and the formation error of mark AM by the mark forming unit 12. It has component CMX. The error component CM2 includes, for example, an error in the device coordinate system of the second exposure apparatus 20, a placement error of the substrate W on the substrate stage, etc., and includes X-direction shift, Y-direction shift, and rotation (θ direction). ), can be expressed as multiple elements of X-direction magnification and Y-direction magnification.

In S17, the correction value CV used when forming the second pattern P2 on the substrate is obtained under the coordinate system of the second exposure apparatus 20. The correction value CV is an individual difference in the characteristics of the first exposure apparatus 10 and the second exposure apparatus 20, that is, an error uniquely occurring in the first exposure apparatus 10 and an error unique to the second exposure apparatus 20. This is to correct (reduce) the difference in error that occurs, and can be obtained by the following equation (1). In equation (1), the difference between the mark coordinate information C1 obtained by the first exposure device 10 in the step S13 and the mark coordinate information C2 obtained by the second exposure device 20 in the step S16 is a correction value. It can be obtained as CV. The mark coordinate information C1 and the mark coordinate information C2 commonly include the formation error component CMX of the mark AM. Therefore, as a result, the correction value CV becomes the difference between the error component CM1 that occurs uniquely in the first exposure apparatus 10 and the error component CM2 that uniquely occurs in the second exposure apparatus 20.

CV=C2-C1

=(CM2+CMX)-(CM1+CMX)

=CM2-CM1 … (One)

In S18, pattern formation of the second exposure apparatus 20 under the coordinate system of the second exposure apparatus 20 based on second information (e.g., design data) indicating target position coordinates at which the second pattern P2 must be formed. A second pattern P2 is formed on the substrate by the part 21 (second forming process). At this time, based on the correction value CV obtained in step S17, the position of the second pattern P2 formed on the substrate under the coordinate system of the second exposure apparatus 20 is determined. Specifically, the target position coordinates of the second information are corrected using the correction value CV, and the second pattern P2 is formed on the substrate based on the position coordinates thus obtained. As shown in FIG. 8(b), the error of the second pattern P2 formed on the substrate in this way is the error component CM1 obtained by subtracting the correction value CV from the error component CM2 inherent in the second exposure apparatus 20. It becomes just that. That is, individual differences in the characteristics of the first exposure apparatus 10 and the second exposure apparatus 20 can be corrected (reduced) by using the same error component CM1 in the first pattern P1 and the second pattern P2. As a result, the first index TP as the dimension of the entire pattern and the second index CS as the position of the entire pattern can each be within the allowable range. Additionally, in S19, the substrate W is unloaded from the second exposure apparatus 20 by the transfer unit 30 .

As described above, the forming system 100 of this embodiment is based on the difference between the mark coordinate information C1 obtained by the first exposure apparatus 10 and the mark coordinate information C2 obtained by the second exposure apparatus 20, The position of the second pattern P2 formed on the substrate by the exposure device 20 is determined. In this way, individual differences in the characteristics of the first exposure apparatus 10 and the second exposure apparatus 20 can be corrected (reduced), and the precision of pattern formation by MMG technology can be improved.

<Embodiment of manufacturing method of article>

The method for manufacturing an article according to an embodiment of the present invention is suitable for manufacturing articles such as microdevices such as semiconductor devices or elements having a fine structure. The manufacturing method of the article of this embodiment includes a process of forming a latent image pattern on a photosensitive agent applied to a substrate using the exposure apparatus (a process of exposing the substrate), and developing (processing) the substrate on which the latent image pattern was formed in this process. Includes the process of Additionally, this manufacturing method includes other well-known processes (oxidation, film formation, deposition, doping, planarization, etching, resist stripping, dicing, bonding, packaging, etc.). The manufacturing method of the product of this embodiment is advantageous over the conventional method in at least one of product performance, quality, productivity, and production cost.

<Other examples>

The present invention provides a process in which a program that realizes one or more functions of the above-described embodiments is supplied to a system or device through a network or a storage medium, and one or more processors in a computer of the system or device read and execute the program. It is also feasible. It can also be realized by a circuit (for example, ASIC) that realizes more than one function.

Although preferred embodiments of the present invention have been described above, it goes without saying that the present invention is not limited to these embodiments, and various modifications and changes are possible within the scope of the gist.

10: first exposure device
11: Pattern forming part
12: Mark forming part
13: Mark measurement unit
20: second exposure device
21: Pattern forming part
23: Mark measurement unit
30: Conveyance department
40: main control unit
100: forming system

Claims (12)

A forming method comprising forming a first pattern on a layer on a substrate with a first device and forming a second pattern with a second device on a region of the layer that is different from the region where the first pattern is formed,
A first step of measuring the position of a mark formed on the substrate in the first device and forming the first pattern on the substrate;
A second process of measuring the position of the mark in the second device and forming the second pattern on the substrate.
Including,
In the first process, the first pattern is formed on the substrate based on predetermined design data without using the first measurement result of measuring the position of the mark in the first process,
In the second process, the second pattern is formed at a position determined using information based on the first measurement result and information based on a second measurement result of measuring the position of the mark in the second process. Characterized forming method. According to paragraph 1,
In the second process, information based on the first measurement result is corrected so that the misalignment of the positional relationship between the first pattern and the second pattern due to the difference in characteristics of the first device and the second device is corrected. and correcting the position of the second pattern formed on the substrate in the second device using information based on the second measurement result. According to paragraph 1,
In the second process, the mark is formed on the substrate in the second device based on the difference between the position of the mark measured in the first process and the position of the mark measured in the second process. 2 A forming method characterized by determining the position of the pattern. According to paragraph 3,
In the second process, the second pattern is formed on the substrate in the second device based on the position obtained by correcting the design position at which the second pattern should be formed by the difference. How to form. According to paragraph 1,
In the first step, the first pattern is formed on the substrate at a design position where the first pattern should be formed in the first device. According to paragraph 1,
A forming method comprising a step of forming the mark on the substrate using the first device before the first step. According to paragraph 1,
The forming method further comprising transmitting the first measurement result from the first device to the second device. A forming step of forming a pattern on a substrate using the forming method according to any one of claims 1 to 7;
Including a processing process of processing the substrate on which the pattern was formed in the forming process,
A method of manufacturing an article, characterized in that an article is manufactured from the substrate processed in the processing process. A computer program stored in a storage medium for causing a computer to execute each step of the forming method according to any one of claims 1 to 7. A system for forming a first pattern in a layer on a substrate and forming a second pattern in a region of the layer that is different from the region in which the first pattern is formed, comprising:
A first device having a first measuring unit that measures the position of a mark formed on the substrate and a first forming unit that forms the first pattern on the substrate based on predetermined design data;
A second device having a second measuring unit that measures the position of the mark and a second forming unit that forms a second pattern on the substrate.
Including,
The second forming unit forms the second pattern at a position determined based on information obtained by measuring the position of the mark in the first measuring unit and information obtained by measuring the position of the mark in the second measuring unit. Featured system. A lithographic apparatus for forming a first pattern in a layer on a substrate, before forming a second pattern by a lithographic apparatus separate from the lithographic apparatus in a region of the layer different from the region in which the first pattern is formed, comprising: A lithographic apparatus for forming the first pattern, comprising:
a measuring unit that measures the position of a mark formed on the substrate;
a forming portion forming the first pattern;
A control unit that outputs information indicating the position of the mark obtained from the measurement unit to the separate lithography device.
Including,
A lithography apparatus, wherein the forming unit forms the first pattern on the substrate based on predetermined design data without using measurement results from the measuring unit. A lithographic apparatus, comprising: forming a second pattern in a region of the layer different from the region in which the first pattern was formed after forming a first pattern in a layer on a substrate by a lithographic apparatus separate from the lithography apparatus. A lithographic apparatus, comprising:
a measuring unit that measures the position of a mark formed on the substrate;
a forming portion for forming the second pattern on the substrate;
A control unit that acquires first information based on a measurement result obtained by measuring the position of the mark in the separate lithography device
Including,
The forming unit provides the first information and A lithographic apparatus, wherein the second pattern is formed on the substrate using second information based on measurement results obtained by measurement by the measurement unit.

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