TWI801685B - Forming method, system, lithographic apparatus, manufacturing method and program of article - Google Patents

Abstract

The present invention provides an advantageous technique for improving the accuracy of pattern formation. A method for forming a pattern of a layer on a substrate using the first device and the second device includes: a first measurement procedure for measuring a position of a mark formed on the substrate by the first device; a first forming procedure, It is based on the target position where the first pattern is to be formed, forming the aforementioned first pattern on the aforementioned substrate in the aforementioned first device; the second measurement procedure is to measure the position of the aforementioned mark in the second device; the second forming procedure , which is the person who forms the second pattern on the aforementioned substrate in the second device; wherein, in the aforementioned second forming procedure, based on the position of the aforementioned mark measured in the aforementioned first measuring procedure and the position of the aforementioned second measuring procedure The measured difference between the positions of the marks determines the position where the second pattern is formed on the substrate in the second device.

Description

Forming method, system, lithographic apparatus, manufacturing method and program of article

The present invention relates to a method for forming a layer pattern on a substrate, a system, a photolithography device, a method and a program for manufacturing an article.

In recent years, especially in liquid crystal display devices, the size of the substrate has increased, and it is required to use the substrate without waste. Therefore, a so-called MMG (Multi Model on Glass: mixed glass substrate) technique has been proposed in which a plurality of devices of different sizes are formed on one substrate using a plurality of devices (see Patent Document 1). In such an MMG technique, the overall size and position of a plurality of patterns formed by a plurality of devices in one layer on a substrate can be used as an evaluation index of pattern formation accuracy. prior art literature patent documents

Patent Document 1: Japanese Patent Laid-Open No. 2005-092137

[Problem to be solved by the invention]

Among the plurality of devices used in the MMG technique, there may be individual differences in pattern formation characteristics. In this case, the positional relationship of the plurality of patterns formed by the plurality of devices deviates from the target value (design value), and it may be difficult to form patterns with high accuracy on the substrate.

Therefore, an object of the present invention is to provide a technique that is advantageous for improving the precision of pattern formation. [means used to solve a problem]

In order to achieve the above object, a forming method as an aspect of the present invention is a forming method of forming a pattern on a layer of a substrate using a first device and a second device, including: a first measurement procedure, which is measured in the aforementioned first device The position of the mark formed on the substrate; the first forming procedure, which is to form the first pattern on the substrate with the first device based on the target position where the first pattern is to be formed; the second measurement procedure, which The one for measuring the position of the aforementioned mark in the aforementioned second device; and the second forming process, which is for forming a second pattern on the aforementioned substrate in the aforementioned second device; wherein, in the aforementioned second forming process, based on the aforementioned The difference between the position of the mark measured in a measurement procedure and the position of the mark measured in the second measurement procedure determines the position of the second pattern formed on the substrate by the second device.

Further objects and other aspects of the present invention will become clear from preferred embodiments described below with reference to the drawings. [Efficacy of the invention]

According to the present invention, it is possible to provide, for example, an advantageous technique for improving the precision of pattern formation.

Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. In addition, in each figure, the same code|symbol is attached|subjected to the same member and element, and repeated description is abbreviate|omitted.

<First Embodiment> The forming system 100 (forming apparatus) related to the first embodiment of the present invention will be described. The forming system 100 of the present embodiment executes the so-called MMG (Multi Model on Glass: glass mixed substrate) technology that uses multiple photolithography devices to form patterns at different positions in one layer (the same layer) on the substrate. system. Examples of the photolithography apparatus include an exposure apparatus that exposes a substrate to transfer a pattern of a mask to a substrate, an imprint apparatus that forms a pattern of an imprint material on a substrate using a mold, and a drawing apparatus that forms a pattern on a substrate using a charged particle beam. device etc.

In addition, "a layer on the substrate" applying the MMG technology in the present invention can be, for example, a layer (so-called first layer) initially formed on a bare board that has not yet been patterned, but it is not limited thereto, and can also be a second layer. layer later. In this embodiment, an example in which a pattern (latent image pattern) is formed on one resist layer (photosensitive agent) on a substrate using the forming system 100 having a plurality of exposure apparatuses 10 will be described. Here, as the substrate W, for example, a glass plate, a semiconductor wafer, or the like can be applied, but in this embodiment, an example in which a glass plate is used as the substrate W will be described. In addition, hereinafter, "a layer on the substrate" may be simply referred to as "on the substrate".

FIG. 1 is a schematic diagram showing the overall configuration of a forming system 100 according to the first embodiment. The forming system 100 may include a first exposure device 10 (first device), a second exposure device 20 (second device), a transport unit 30 , and a main control unit 40 . The transport unit 30 transports the substrate W to the first exposure device 10 and the second exposure device 20 . The main control unit 40 is composed of, for example, a computer with a CPU and a memory, and controls the entire system 100 as a whole, and can control the transmission of data and information between the first exposure device 10 and the second exposure device 20 .

The first exposure device 10 may include, for example, a pattern forming unit 11 (first forming unit), a mark forming unit 12 , a mark measuring unit 13 (first measuring unit), and a control unit 14 . The pattern forming unit 11 forms the first pattern P1 on the substrate by transferring the pattern of the mask M onto the substrate. For example, the pattern forming part 11 forms the first pattern P1 on the first region on the substrate based on the first information (such as design data) indicating the coordinates of the target position where the first pattern P1 is to be formed. The mark forming unit 12 forms an alignment mark on the substrate based on information (for example, design data) indicating coordinates of a target position where the alignment mark is to be formed. The mark measuring section 13 measures the position of the alignment mark formed by the mark forming section 12 . The control unit 14 is composed of, for example, a computer having a CPU, a memory, etc., and controls the pattern forming unit 11, the mark forming unit 12, and the mark measuring unit 13 in accordance with the device coordinate system (that is, controls each process performed by the first exposure device 10). . In the present embodiment, the control unit 14 is provided independently of the main control unit 40 , but may also be provided as a component of the main control unit 40 .

The second exposure device 20 may include, for example, a pattern forming unit 21 (second forming unit), a mark measuring unit 23 (second measuring unit), and a control unit 24 . Although the mark forming part is not provided in the 2nd exposure apparatus 20 of this embodiment, a mark forming part may be provided. The pattern forming unit 21 forms the second pattern P2 on the substrate by transferring the pattern of the mask M onto the substrate. For example, the pattern forming unit 21 forms the second pattern P2 on a second area on the substrate different from the first area on which the first pattern P1 is formed based on second information (for example, design data) indicating coordinates of a target position where the second pattern P2 is to be formed. The second pattern P2. The mark measuring unit 23 measures the position of the mark AM formed by the mark forming unit 12 of the first exposure device 10 . The control unit 24 is constituted by, for example, a computer having a CPU, a memory, etc., and controls the pattern forming unit 21 and the mark measuring unit 23 in accordance with the device coordinate system (ie, controls each process performed by the second exposure device 20 ). In the present embodiment, the control unit 24 is provided independently of the main control unit 40 , but may also be provided as a component of the main control unit 40 .

Next, a specific configuration example of the first exposure device 10 will be described. FIG. 2 is a diagram illustrating a configuration example of the first exposure device 10 . Here, the second exposure device 20 is different from the first exposure device 10 in that the mark forming part 12 is not provided, and the configuration other than that is the same. That is, the pattern formation part 21 and the mark measurement part 23 of the 2nd exposure apparatus 20 can be comprised similarly to the pattern formation part 11 and the mark measurement part 13 of the 1st exposure apparatus 10, respectively.

The first exposure device 10 may include an illumination optical system 11 b , a mask mounting table 11 c , a projection optical system 11 d , and a substrate mounting table 11 e as the pattern forming unit 11 . The illumination optical system 11b illuminates the mask M using the light from the light source 11a. The mask mounting table 11c is configured to be movable so as to hold the mask M. As shown in FIG. 11 d of projection optical systems project the pattern formed in the mask M onto the board|substrate W. As shown in FIG. The substrate stage 11e is configured to be movable so as to hold the substrate W. As shown in FIG. In the first exposure apparatus 10 configured in this way, the mask M and the substrate W are disposed at optically conjugate positions (the object plane and the image plane of the projection optical system 11d ) via the projection optical system 11d , and the projection optical system 11d Project the pattern of the mask M onto the substrate. Thereby, a latent image pattern can be formed on the resist layer on the substrate.

In addition, the above-described mark forming unit 12 and mark measuring unit 13 are provided in the first exposure device 10 shown in FIG. 2 . The mark forming unit 12 is also called MF (Mark Former), and forms alignment marks on the substrate by irradiating the substrate with energy such as a charged particle beam. Hereinafter, the alignment mark formed on the substrate by the mark forming unit 12 may be referred to as “mark AM”. The mark measuring unit 13 measures the position of the mark AM by detecting the mark AM formed on the substrate by the mark forming unit 12 . For example, the mark measurement unit 13 includes a viewer (off-axis scope) having an image sensor and an optical element, and can measure the position of the substrate W (in the XY direction) and the mark AM in the field of view of the viewer. to measure the position of the marker AM.

[About pattern forming precision] Next, the formation of the 1st pattern P1, the 2nd pattern P2, and the mark AM on a board|substrate by the formation system 100 (1st exposure apparatus 10, the 2nd exposure apparatus 20) is demonstrated. FIG. 3 is a diagram illustrating a first pattern P1, a second pattern P2, and a mark AM formed on a substrate by the forming system 100. Referring to FIG.

The first pattern P1 may be formed on a first region on the substrate by the pattern forming part 11 of the first exposure device 10 . The second pattern P2 may be formed by the pattern forming part 21 of the second exposure device 20 on a second area on the substrate different from the first area where the first pattern P1 is formed. In the example shown in FIG. 3 , each of the first pattern P1 and the second pattern P2 is formed on the substrate with the same size (size), but they are not limited thereto, and may have different sizes and numbers.

In addition, the mark AM can be formed at a plurality of locations in different regions (first region, second region) from the region where the first pattern P1 and the second pattern P2 are formed by the mark forming unit 12 of the first exposure device 10 . In the example shown in FIG. 3 , three marks AM1 to AM3 are formed near the corners of the substrate W so as not to be arranged on the same straight line. When the three marks AM1 to AM3 are formed on the substrate in this manner, based on the measurement results of the positions of the three marks AM1 to AM3, it is possible to obtain the X-direction offset, the Y-direction offset, the rotation, the X-direction magnification, and Y direction magnification.

Here, the formation accuracy of the pattern formed by the formation system 100 (MMG Technology) may be evaluated based on the size and position of the entire pattern formed on the substrate. The size of the entire pattern formed on the substrate can be specified, for example, by a first index TP (Total Pitch: total pitch) indicating the length of the diagonal of the entire pattern formed on the substrate. In this embodiment, the lower right endpoint EP1 of the first pattern P1 formed on the substrate by the first exposure device 10 and the upper left endpoint of the second pattern P2 formed on the substrate by the second exposure device 20 are connected. The length of the straight line of EP2 can be determined as the first index TP. On the other hand, the position of the entire pattern formed on the substrate can be specified, for example, by a second index CS (Center Shift) indicating the position of the center point of the entire pattern formed on the substrate. In this embodiment, the center point of the straight line connecting the end point EP1 and the end point EP2 may be determined as the second index CS.

[Problems with known pattern formation] In the forming system 100 having a plurality of devices (the first exposure device 10 and the second exposure device 20), it is sought to make the above-mentioned first index TP and second index CS respectively within the allowable range (desired range) A pattern is formed on the substrate. In a known method, in each of the first exposure device 10 and the second exposure device 20, the positions of the marks AM formed on the substrate are measured, and the patterns (the first pattern P1, the second pattern P1, The second pattern P2) is formed on the substrate. However, the formation accuracy of the mark AM formed by the mark forming unit 12 is insufficient, and the mark AM may not be formed on the target position coordinates (design position) on the substrate. Therefore, when forming a pattern on the substrate based on the measurement result of the position of the mark AM, it may be difficult to form the pattern on the substrate with high accuracy depending on the formation accuracy of the mark AM as shown in the following conventional examples.

Conventional Example 1 FIG. 4 is a schematic diagram for explaining the decrease in pattern formation accuracy related to Conventional Example 1. FIG. In Conventional Example 1, as shown in (a) of FIG. 4 , an example in which three marks AM1 to AM3 are formed on a substrate shifted in one direction from the target position coordinate T _AM is shown. In this case, in the first exposure device 10, based on the measurement results of the positions of the marks AM1 to AM3, the marks AM1 to AM3 and the first pattern P1 have a target positional relationship (for example, a positional relationship in the design data). In this way, the first pattern P1 is formed ((b) of FIG. 4 ). In addition, in the second exposure device 20, based on the measurement results of the positions of the marks AM1 to AM3, the second pattern P2 is formed so that the marks AM1 to AM3 and the second pattern P2 have a target positional relationship ((c) of FIG. 4 ). . In this example, according to the deviation of the marks AM1 - AM3 from the target position coordinate T _AM , the first pattern P1 and the second pattern P2 are formed on the substrate offset from the target position coordinates T _P1 and T _P2 . That is, in this example, the first index TP which is the size of the entire pattern can be within the allowable range, but the second index CS which is the position of the entire pattern cannot be within the allowable range.

Conventional Example 2 FIG. 5 is a schematic diagram for explaining the decrease in pattern formation accuracy related to Conventional Example 2. FIG. In Conventional Example 2, as shown in FIG. 5( a ), marks AM1 to AM2 on the +Y direction side are shifted from the target position coordinate T _AM to the +Y direction and formed on the substrate, and in the -Y direction. An example in which the side mark AM3 is shifted in the −Y direction from the target position coordinate T _AM is formed on the substrate. In this case, in the first exposure device 10, based on the measurement results of the positions of the marks AM1 to AM3, the first pattern P1 is formed so that the marks AM1 to AM3 and the first pattern P1 have a target positional relationship (( b)). In addition, in the second exposure device 20, based on the measurement results of the positions of the marks AM1 to AM3, the second pattern P2 is formed so that the marks AM1 to AM3 and the second pattern P2 have a target positional relationship ((c) of FIG. 5 ). . In this example, according to the deviation of the marks AM1 - AM3 from the target position coordinate T _AM , the first pattern P1 and the second pattern P2 are formed on the substrate with their magnifications changed in the ±Y direction. That is, in this example, the second index CS which is the position of the entire pattern can be within the allowable range, but the first index CS which is the size of the entire pattern cannot be within the allowable range.

Conventional Example 3 FIG. 6 is a schematic diagram for explaining the decrease in pattern formation accuracy related to Conventional Example 3. FIG. In Conventional Example 3, as shown in FIG. 6( a ), an example in which three marks AM1 to AM3 are shifted in one direction from the target position coordinate T _AM to be formed on the substrate is shown. In this case, in the first exposure apparatus 10, instead of using the measurement results of the positions of the marks AM1 to AM3, based on the information (design data) showing the coordinates of the target position where the first pattern P1 is to be formed, the first The first pattern P1 is formed in the coordinate system of the exposure apparatus 10 ((b) of FIG. 6 ). On the other hand, in the second exposure device 20, based on the measurement results of the positions of the marks AM1 to AM3, the second pattern P2 is formed so that the marks AM1 to AM3 and the second pattern P2 have a target positional relationship ((c of FIG. 6 ). )). In this example, the first pattern P1 is formed on the substrate without shifting the marks AM1~AM3, but the second pattern P2 is formed on the substrate shifting from the target position coordinate T _P1 according to the shifting of the marks AM1~AM3 . That is to say, in this example, the positional relationship between the first pattern P1 and the second pattern P2 deviates from the target positional relationship, and the first index TP which is the size of the entire pattern and the second index CS which is the position of the entire pattern cannot be in the same position. within the allowable range.

[Pattern Formation Process of the Present Embodiment] In this embodiment, in order to solve the above-mentioned problems in the conventional pattern formation, both the first pattern P1 and the second pattern P2 are based on the information (such as design data) showing the coordinates of the target position, at the coordinates of each exposure device. The system is formed on the substrate. Specifically, the first exposure device 10 forms the first pattern P1 on the substrate at the target position coordinates in the coordinate system of the first exposure device 10 based on the information indicating the target position coordinates where the first pattern P1 is to be formed. Likewise, the second exposure device 20 forms the second pattern P2 on the substrate at the target position coordinates in the coordinate system of the second exposure device 20 based on the information showing the target position coordinates where the second pattern P2 is to be formed.

However, among the plurality of exposure apparatuses (the first exposure apparatus 10 and the second exposure apparatus 20 ) used in the forming system 100 , there may be individual differences in characteristics inherent to the apparatuses. The characteristic refers to, for example, an error inherent in the device, such as an error in the coordinate system of the device and a mounting error of the substrate conveyed on the substrate mounting table. In this way, when there is an individual difference in characteristics between the first exposure device 10 and the second exposure device 20 , the positions of the first pattern P1 formed by the first exposure device 10 and the second pattern P2 formed by the second exposure device 20 Relationships can deviate from the target positional relationship. As a result, the first index TP which is the size of the entire pattern and the second index CS which is the position of the entire pattern may not be within the allowable range (in particular, the first index TP may not be within the allowable range).

Then, in the forming system 100 of the present embodiment, the position of the mark AM measured by the mark measuring unit 13 in the coordinate system of the first exposure device 10 and the position of the mark AM measured by the mark in the coordinate system of the second exposure device 20 are obtained. The difference in the position of the mark AM measured by the unit 23 . And based on this difference, the position where the 2nd pattern P2 is formed on a board|substrate in the coordinate system of the 2nd exposure apparatus 20 is determined (corrected). Specifically, it is possible to correct deviations in the positional relationship between the first pattern P1 and the second pattern P2 due to individual differences in pattern formation characteristics between the first exposure device 10 and the second exposure device 20 . , to determine the position to form the second pattern P2 on the substrate. Thereby, the first pattern and the second pattern can be formed on the substrate so that the first index TP and the second index CS are respectively within the allowable range.

Hereinafter, a process of forming a pattern on a substrate (MMG technology) in the forming system 100 of the present embodiment will be described with reference to FIGS. 7 to 8 . FIG. 7 is a flowchart showing a process of forming a pattern on a substrate according to the present embodiment. Each program in the flowchart shown in FIG. 7 can be executed under the control of the main control unit 40 . In addition, FIG. 8 is a schematic diagram illustrating how the mark AM, the first pattern P1 , and the second pattern P2 are formed on the substrate as time passes.

In S11 , the substrate W is transported to the first exposure device 10 by the transport unit 30 . In S12, a mark is formed on the substrate by the mark forming section 12 of the first exposure device 10 in the coordinate system of the first exposure device 10 based on the information showing the coordinates of the target position where the mark AM is to be formed (for example, design data). AM (Mark Formation Program). That is, the target position coordinates in the coordinate system of the first exposure device 10 form the marks AM. Here, as described above, the mark AM formed by the mark forming unit 12 may not be formed precisely on the target position coordinates but at a position shifted from the target position coordinates. In this embodiment, three marks AM are formed on the substrate, and the three marks AM have an X-direction offset component (an example of an arrangement offset component) and a Y-direction magnification component (an example of a shape change component). Example) formation error.

In S13, in the coordinate system of the first exposure device 10, the position of the mark AM formed on the substrate in the procedure of S12 is measured by the mark measurement unit 13 of the first exposure device 10 (first measurement procedure). Thereby, the mark coordinate information C1 which shows the position coordinate of the mark AM in the coordinate system of the 1st exposure apparatus 10 can be obtained. This mark coordinate information C1 has an error component CM1 inherently generated by the first exposure device 10 and a formation error component CMX of the mark AM formed by the mark forming unit 12 when it is assumed that no measurement error occurs in the mark measuring unit 13 . The error component CM1 includes, for example, the error of the device coordinate system in the first exposure device 10, the mounting error of the substrate W on the substrate mounting table, etc. X-direction magnification and Y-direction magnification are represented by a plurality of elements. In addition, the formation error component CMX of the mark AM can also be represented by a plurality of elements similarly to the error component CM1, but is constituted by an X-direction offset and a Y-direction magnification in this embodiment.

In S14, based on the first information (for example, design data) showing the coordinates of the target position where the first pattern P1 is to be formed, the pattern forming part 11 of the first exposure device 10 is placed on the substrate in the coordinate system of the first exposure device 10 A first pattern P1 is formed (first forming procedure). That is, the first pattern P1 is formed at the target position coordinates in the coordinate system of the first exposure device 10 without using the mark coordinate information C1 (measurement result of the mark measuring unit 13 ) obtained in the procedure of S13 . According to this program, as shown in (a) of FIG. 8 , although an error component CM1 inherent to the first exposure device 10 occurs with respect to the target position coordinates of the first information, it is possible to form the mark AM independently of the mark forming unit 12. The error component CMX forms the first pattern P1 on the substrate.

In S15, the substrate W is transferred from the first exposure device 10 to the second exposure device 20 by the transfer unit 30, and the mark coordinate information C1 obtained by the first exposure device 10 in the procedure of S13 is transmitted (notified) to the second exposure device 20. Two exposure devices 20 . In the present embodiment, the transfer of the mark coordinate information C1 is performed when the substrate W is transferred to the second exposure device 20 , but it is not limited thereto, as long as it is performed between S13 and S17 .

In S16, in the coordinate system of the second exposure device 20, the mark AM formed on the substrate by the mark forming part 12 of the first exposure device 10 in the procedure of S12 is measured by the mark measuring part 23 of the second exposure device 20 position (second measurement procedure). Thereby, the mark coordinate information C2 which shows the position coordinate of the mark AM in the coordinate system of the 2nd exposure apparatus 20 can be obtained. The mark coordinate information C2 has an error component CM2 inherently generated by the second exposure device 20 and a formation error component CMX of the mark AM formed by the mark forming portion 12 when it is assumed that no measurement error occurs in the mark measuring portion 23 . The error component CM2 includes, for example, the error of the device coordinate system in the second exposure device 20, the mounting error of the substrate W on the substrate mounting table, etc. X-direction magnification and Y-direction magnification are represented by a plurality of elements.

In S17, the correction value CV used when forming the 2nd pattern P2 on a board|substrate in the coordinate system of the 2nd exposure apparatus 20 is calculated|required. The correction value CV is used to correct (reduce) the individual difference in the characteristics of the first exposure device 10 and the second exposure device 20, that is, the difference between the error inherently generated by the first exposure device 10 and the error inherently generated by the second exposure device 20, correcting The value CV is obtained by the following formula (1). In formula (1), the difference between the mark coordinate information C1 obtained by the first exposure device 10 in the procedure of S13 and the mark coordinate information C2 obtained by the second exposure device 20 in the procedure of S16 is obtained as a correction Value CV. The mark coordinate information C1 and the mark coordinate information C2 together include the forming error component CMX of the mark AM. Therefore, as a result, the correction value CV is the difference between the error component CM1 inherently generated by the first exposure device 10 and the error component CM2 inherently generated by the second exposure device 20 .

In S18, based on the second information (such as design data) showing the coordinates of the target position where the second pattern P2 is to be formed, in the coordinate system of the second exposure device 20, the pattern forming part 21 of the second exposure device 20 A second pattern P2 is formed on the substrate (second forming procedure). At this time, the position where the second pattern P2 is formed on the substrate in the coordinate system of the second exposure device 20 is determined based on the correction value CV obtained in the routine of S17. Specifically, the target position coordinates of the second information are corrected by using the correction value CV, and the second pattern P2 is formed on the substrate based on the obtained position coordinates. The error of the second pattern P2 formed on the substrate in this way is only an error component obtained by subtracting the correction value CV from the inherent error component CM2 of the second exposure device 20 as shown in FIG. CM1. That is, the same error component CM1 can be provided for the first pattern P1 and the second pattern P2, and individual differences in the characteristics of the first exposure device 10 and the second exposure device 20 can be corrected (reduced). As a result, the first index TP, which is the size of the entire pattern, and the second index CS, which is the position of the entire pattern, can each be within the allowable range. Moreover, in S19, the board|substrate W is carried out from the 2nd exposure apparatus 20 by the conveyance part 30.

As described above, the formation system 100 of this embodiment determines the difference between the mark coordinate information C1 obtained by the first exposure device 10 and the mark coordinate information C2 obtained by the second exposure device 20 . The position on which the second pattern P2 is formed. Thereby, individual differences in the characteristics of the first exposure device 10 and the second exposure device 20 can be corrected (reduced), and the formation accuracy of the pattern formed by the MMG technique can be improved.

<Embodiments of the manufacturing method of the article> The method of manufacturing an article according to the embodiment of the present invention is suitable for, for example, manufacturing articles such as microdevices such as semiconductor devices and elements having a fine structure. The method of manufacturing an article according to this embodiment includes: a process of forming a latent image pattern on a photosensitive agent coated on a substrate using the above-mentioned exposure device (a process of exposing the substrate); Developing (processing) procedures. This manufacturing method also includes other known procedures (oxidation, film formation, vapor deposition, doping, planarization, etching, resist stripping, dicing, bonding, packaging, etc.). Compared with conventional methods, the method of manufacturing an article of this embodiment is advantageous in at least one of article performance, quality, productivity, and production cost.

＜Other Examples＞ The present invention can also be realized by providing a program for realizing one or more functions of the above-mentioned embodiments to a system or device via a network or various storage media, and one or more processors in a computer of the system or device read the program. exit and execute the program. In addition, it can also be realized by a circuit (for example, ASIC) that realizes one or more functions.

Preferred embodiments of the present invention have been described above, but of course the present invention is not limited to these embodiments, and various modifications and changes can be made within the scope of the gist.

10: The first exposure device 11: Pattern forming department 12:Mark forming part 13:Mark the measurement part 20: The second exposure device 21: Pattern forming department 23:Mark measurement department 30:Transportation Department 40: Main Control Department 100:Formation System

[ Fig. 1 ] is a schematic diagram showing the overall structure of the forming system. [FIG. 2] It is a figure which shows the structural example of the 1st exposure apparatus. [FIG. 3] It is a figure which shows the 1st pattern P1, the 2nd pattern P2, and the mark AM formed on the board|substrate. [ FIG. 4 ] is a schematic diagram for explaining the decrease in pattern formation accuracy related to Conventional Example 1. [ FIG. [ FIG. 5 ] is a schematic diagram for explaining the decrease in pattern formation accuracy related to Conventional Example 2. [ FIG. [FIG. 6] It is a schematic diagram for demonstrating the fall of the pattern formation precision concerning the conventional example 3. [FIG. [FIG. 7] It is a flowchart which shows the process of forming a pattern on a board|substrate. [FIG. 8] It is a schematic diagram which shows the state of forming the mark AM, the 1st pattern P1, and the 2nd pattern P2 on the board|substrate with time.

Claims (17)

A pattern forming method, which is to form a latent image of a first pattern on a layer on a substrate with a first device, and to use a second device in a region different from the region in which the latent image of the first pattern is formed in the aforementioned layer The person who forms the latent image of the second pattern includes: in the first device, measuring the position of the mark formed on the aforementioned substrate, and forming the first procedure of the latent image of the aforementioned first pattern on the aforementioned substrate; and in the aforementioned first device Two means, measuring the position of the aforementioned mark, and forming the latent image of the aforementioned second pattern on the aforementioned second procedure of the substrate; wherein, in the aforementioned second procedure, the position of the aforementioned marker is measured based on the aforementioned first procedure. The information of the first measurement result and the position on the substrate determined based on the information of the second measurement result of the position of the mark measured in the second process form a latent image of the second pattern. The pattern forming method according to claim 1, wherein, in the second procedure, the latent image of the first pattern and the latent image of the second pattern caused by the difference in characteristics between the first device and the second device The method of correcting the deviation of the positional relationship of the above-mentioned method uses the information based on the first measurement result and the information based on the second measurement result to correct the position on the substrate on which the latent image of the second pattern is formed by the second device. The pattern forming method according to claim 1, wherein, in the aforementioned second procedure, based on the aforementioned index measured in the aforementioned first procedure The difference between the position of the mark and the position of the mark measured in the second process determines the position on the substrate on which the latent image of the second pattern is formed by the second device. The pattern forming method according to claim 3, wherein, in the aforementioned second program, based on the position obtained by correcting the target position of the latent image to form the aforementioned second pattern by using the aforementioned difference, in the aforementioned second device, in the aforementioned A latent image of the aforementioned second pattern is formed on the substrate. The pattern forming method according to claim 1, wherein, in the aforementioned first procedure, a latent image of the aforementioned first pattern is formed on the aforementioned substrate without using a measurement result in the aforementioned first procedure. The pattern forming method according to claim 1, wherein, in the first procedure, the first pattern is formed at a target position on the substrate where the first device is to form the first pattern. The pattern forming method according to claim 1, wherein, prior to the first step, the pattern forming method includes a step of forming the mark on the substrate by the first device. The pattern forming method according to claim 1, wherein said forming method further includes a program of transferring measurement results in said first program from said first device to said second device. A method of manufacturing a device with a microstructure, which includes a pattern forming process and a developing process, in the pattern forming process, a layer on a substrate is formed with a first device to form a latent image of a first pattern, and among the layers In the area different from the area where the latent image of the aforementioned first pattern is formed, the latent image of the second pattern is formed with the second device. Like, the aforementioned pattern forming process includes: in the aforementioned first device, measuring the position of the mark formed on the aforementioned substrate, forming the first program of the latent image of the aforementioned first pattern on the aforementioned substrate; and in the aforementioned second device, measuring The position of the aforementioned mark, the second process of forming the latent image of the aforementioned second pattern on the aforementioned substrate; in the aforementioned second process, information based on the first measurement result of the position of the aforementioned mark measured in the aforementioned first process A latent image of the second pattern is formed based on the position on the aforementioned substrate determined based on the information of the second measurement result of the position of the aforementioned mark in the aforementioned second process, and a patterned latent image will be formed in the aforementioned developing process The aforementioned substrate is developed wherein an article is manufactured from the aforementioned substrate developed in the aforementioned developing procedure. A storage medium storing programs for causing a computer to execute the respective programs of the pattern forming method according to any one of Claims 1 to 8. A pattern forming system for forming a latent image of a first pattern on a layer on a substrate, forming a latent image of a second pattern in a region of the layer different from the region on which the latent image of the first pattern is formed , comprising: a first device having a first measuring section for measuring the position of a mark formed on the aforementioned substrate and a first forming section for forming a latent image of the aforementioned first pattern on the aforementioned substrate; and having a first device for measuring the position of the aforementioned mark The second device of the second measuring unit and the second forming unit that forms the latent image of the second pattern on the aforementioned substrate; Wherein, the position of the second forming part on the substrate is determined based on information obtained by measuring the position of the mark with the first measuring part and information obtained by measuring the position of the mark with the second measuring part, A latent image of the foregoing second pattern is formed. A lithographic apparatus for forming a latent image of a first pattern in a layer on a substrate, through a lithographic apparatus different from the aforementioned lithographic apparatus so as to form the latent image of the aforementioned first pattern in the aforementioned layer Before forming the latent image of the second pattern in different regions, the person who forms the latent image of the first pattern includes: a measuring part for measuring the position of the mark formed on the substrate; and a device for forming the latent image of the first pattern. a forming unit; outputting information showing the position of the mark obtained by the measuring unit to the control unit of the different photolithography apparatus. A lithographic apparatus, which is formed in the layer with the latent image of the first pattern formed in the layer after the latent image of the first pattern is formed on a substrate through a lithographic apparatus different from the aforementioned lithographic apparatus The latent image of the second pattern formed in different regions includes: a measurement part for measuring the position of the mark formed on the substrate through the different photolithography device; and a part for forming the latent image of the second pattern on the substrate forming part; and controlling the forming part so as to obtain information based on the first measurement result of the position of the mark measured by the different photolithography apparatus, when using the information based on the first measurement result and based on the measurement by the measuring part up The position on the substrate determined by the information of the second measurement result of the position of the mark forms the control portion of the latent image of the second pattern. A pattern forming method, which is to form a latent image of a first pattern on a layer on a substrate with a first device, and form a second pattern with a second device in a region of the aforementioned layer that is different from the region where the latent image of the first pattern is formed. The latent image of the pattern includes: measuring the position of the mark formed on the aforementioned substrate in the aforementioned first device, and forming the first program of the latent image of the aforementioned first pattern on the aforementioned substrate; the measurement in the aforementioned first program A second process of transmitting the result from the first device to the second device; a third process of measuring the position of the mark in the second device and forming a latent image of the second pattern on the substrate. The pattern forming method according to claim 14, wherein the shape of the first pattern is different from the shape of the second pattern. A method of manufacturing a device with a microstructure, which includes a pattern forming process and a developing process. In the pattern forming process, a layer on a substrate is formed with a first device to form a latent image of a first pattern. A second device is used to form a second device for a region of the aforementioned layer having a different region of the latent image of the pattern, and the aforementioned pattern forming procedure includes: measuring the position of the mark formed on the aforementioned substrate in the aforementioned first device, and converting the aforementioned The first process in which the latent image of the first pattern is formed on the aforementioned substrate; the second process in which the measurement results in the aforementioned first process are transmitted from the aforementioned first device to the aforementioned second device; and in the aforementioned first process The second device measures the position of the aforementioned mark, and the third procedure of forming the latent image of the aforementioned second pattern on the aforementioned substrate, in the aforementioned developing procedure, developing the aforementioned substrate on which the latent image of the pattern is formed; The procedure is developed for the fabrication of the aforementioned substrates. A pattern forming system, which forms a latent image of a first pattern on a layer on a substrate, and forms a latent image of a second pattern in a region of the aforementioned layer different from a region where the latent image of the first pattern is formed, comprising: A first device having a first measuring section for measuring a position of a mark formed on the aforementioned substrate and a first forming section for forming a latent image of the aforementioned first pattern on the aforementioned substrate; and having a second measuring section for measuring the position of the aforementioned mark The second device of the second forming part and the second forming part that forms the latent image of the second pattern on the aforementioned substrate; the aforementioned first device outputs information showing the position of the aforementioned mark obtained by the aforementioned first measuring part to the aforementioned second device .

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