TWI791940B - Forming method, forming device and manufacturing method of article - Google Patents

Abstract

A forming method for forming a pattern on one layer of a substrate using a first device and a second device, wherein a process including the following procedure is performed for each substrate: a mark forming process, which is to form a mark on a substrate by the first device or; the first forming process, which is to form the first pattern on the substrate in the aforementioned first device; and the second forming process, which is to form the second pattern on the substrate in the aforementioned second device; the mode of the aforementioned processing , including performing a measurement program for measuring the position of the aforementioned mark in the aforementioned first device, and controlling the formation of the aforementioned second pattern based on the measurement result of the measurement program, and a first mode in which the aforementioned measurement program is omitted, and based on the previous The measurement result of the measurement program controls the second mode of formation of the aforementioned second pattern.

Description

Forming method, forming device and article manufacturing method

The present invention relates to a method for forming a single-layer pattern on a substrate, a device for forming it, and a method for manufacturing an article.

In recent years, especially in liquid crystal display devices, the size of the substrate has increased, and it is now necessary to use the substrate without waste. For this reason, the technology called so-called MMG (Multi Model on Glass) has been proposed, using a plurality of devices, and performing pattern formation to a plurality of regions of one layer on the substrate with a plurality of devices (see Patent Document 1 ).

In MMG technology, the overall size and position of a plurality of patterns formed in one layer on a substrate by a plurality of devices can be used as an evaluation index of pattern formation accuracy. In order to improve such pattern forming accuracy, in Patent Document 1, an alignment mark is formed on a substrate by one of a plurality of devices, and each device forms a pattern on the substrate based on the position of the alignment mark. [Prior Art Literature] [Patent Document]

[Patent Document 1] Japanese Patent Laid-Open No. 2005-092137

[Problem to be solved by the invention]

The MMG technology is advantageous in terms of throughput because the patterning on the substrate is efficiently shared by a plurality of devices, but further improvement in throughput is required.

Therefore, an object of the present invention is to provide an advantageous technique for increasing the throughput. [Technical means to solve the problem]

In order to achieve the above-mentioned object, the formation method as an aspect of the present invention is a formation method that uses the first device and the second device to form a pattern on one layer on the substrate, and performs processing including the following procedures for each substrate: A mark forming process for forming a mark on a substrate by the first device; a first forming process for forming a first pattern on the substrate by the first device; and a second forming process for forming a mark on the substrate by the first device 2. A device that forms the second pattern on the substrate; in terms of the mode of the above-mentioned processing, the above-mentioned first device performs a measurement program for measuring the position of the above-mentioned mark, and controls the formation of the above-mentioned second pattern based on the measurement result of the measurement program. and a second mode in which the formation of the second pattern is controlled based on the measurement results of the previous measurement program while omitting the measurement program.

Further objects and other aspects of the present invention will be clarified through preferred embodiments described below with reference to the drawings. [compared to the effect of prior art]

According to the present invention, for example, it is possible to provide an advantageous technique for increasing the throughput.

Other features and advantages of the present invention will be clarified through the following description with reference to the drawings. In addition, in the drawings, the same or similar configurations are denoted by the same reference signs.

Embodiments will be described in detail below with reference to the drawings. In addition, the following embodiments do not limit the inventors of the claims. Although plural features are described in the embodiments, all of these plural features are not limited to being essential to the invention, and plural features may be combined arbitrarily. In addition, in the drawing, the same reference numerals are assigned to the same or similar configurations, and overlapping explanations are omitted.

[System Components] The forming system 100 (forming apparatus) related to the present invention will be described. The forming system 100 is a system that implements the so-called MMG (Multi Model on Glass) technique, and forms patterns at positions different from each other in one layer (the same layer) on a substrate using a plurality of photolithography apparatuses. In terms of photolithography equipment, for example, an exposure equipment that exposes a substrate to transfer a pattern of a mask to a substrate, an imprinting equipment that uses a mold to form a pattern of an imprint material on a substrate, and a equipment that uses a charged particle beam to form a pattern on a substrate depiction device, etc.

In addition, the "one layer on the substrate" to which the MMG technology related to the present invention is applied may be, for example, the first layer (so-called first layer) formed on a bare board that has not yet been patterned. After 2 floors. In this embodiment, an example in which a pattern (latent pattern) is formed on one resist layer (photosensitive agent) on a substrate using the forming system 100 having a plurality of exposure apparatuses will be described. Here, as the substrate W, for example, a glass plate, a semiconductor wafer, or the like can be applied, but in this embodiment, an example in which a glass plate is used as the substrate W will be described. In addition, in the following, only "one layer on the substrate" may be referred to as "on the substrate".

FIG. 1 is a schematic diagram illustrating the overall structure of a forming system 100 . The forming system 100 may include a first exposure device 10 (first device), a second exposure device 20 (second device), a transport unit 30 , and a main control unit 40 . The transport unit 30 transports the substrate W to the first exposure device 10 and the second exposure device 20 . The main control unit 40 is constituted by, for example, a computer with a CPU and a memory, and controls the entire formation system 100 as a whole, and can control the transfer of data and information between the first exposure device 10 and the second exposure device 20 .

The 1st exposure apparatus 10 can include the pattern forming part 11 (1st forming part), the mark forming part 12, the mark measuring part 13 (1st measuring part), and the control part 14, for example. The pattern forming unit 11 transfers the pattern of the mask M onto the substrate to form the first pattern P1 on the substrate. For example, the pattern forming part 11 forms the first pattern P1 in the first region on the substrate according to the first information (such as design data) indicating the coordinates of the target position where the first pattern P1 should be formed. The mark forming unit 12 forms an alignment mark on the substrate based on information (for example, design data) indicating coordinates of a target position where the alignment mark should be formed. The mark measuring unit 13 measures the position of the alignment mark formed by the mark forming unit 12 . The control unit 14, for example, is composed of a computer having a CPU, a memory, etc., and controls the pattern forming unit 11, the mark forming unit 12, and the mark measuring unit 13 according to the device coordinate system (that is, controls each process performed by the first exposure device 10). ). In the example shown in FIG. 1 , although the control unit 14 has a different shape from the main control unit 40 , it can also be a component of the main control unit 40 .

The 2nd exposure apparatus 20 can include the pattern forming part 21 (2nd forming part), the mark measuring part 23 (2nd measuring part), and the control part 24, for example. In the 2nd exposure apparatus 20 of this embodiment, although a mark forming part is not provided, you may provide a mark forming part. The pattern forming unit 21 transfers the pattern of the mask M onto the substrate to form the second pattern P2 on the substrate. For example, the pattern forming part 21 forms the second pattern P2 on the second region on the substrate different from the first region on which the first pattern P1 is formed, according to the second information (such as design data) indicating the coordinates of the target position where the second pattern P2 should be formed. Pattern P2. The mark measuring unit 23 measures the position of the alignment mark formed by the mark forming unit 12 of the first exposure device 10 . The control unit 24 is constituted by, for example, a computer having a CPU, a memory, etc., and controls the pattern forming unit 21 and the mark measuring unit 23 according to the device coordinate system (ie, controls each process performed by the second exposure device 20 ). In the example shown in FIG. 1 , although the control unit 24 has a different shape from the main control unit 40 , it can also be a component of the main control unit 40 .

Next, a specific configuration example of the first exposure device 10 will be described. FIG. 2 is a diagram illustrating a configuration example of the first exposure apparatus 10 . Here, although the 2nd exposure apparatus 20 differs from the 1st exposure apparatus 10 in that the mark forming part 12 is not provided, other structures may be the same. That is, the pattern formation part 21 and the mark measurement part 23 of the 2nd exposure apparatus 20 can be comprised similarly to the pattern formation part 11 and the mark measurement part 13 of the 1st exposure apparatus 10, respectively.

The 1st exposure apparatus 10 can include the illumination optical system 11b, the mask table 11c, the projection optical system 11d, and the board|substrate stage 11e as the pattern forming part 11. The illumination optical system 11b illuminates the mask M using the light from the light source 11a. The mask stand 11c is configured to be able to move while holding the mask M. 11 d of projection optical systems project the pattern formed in the mask M onto the board|substrate W. As shown in FIG. The substrate stage 11e is configured to hold the substrate W and move. In the first exposure apparatus 10 thus constituted, the mask M and the substrate W are disposed at optically conjugate positions (the object plane and the image plane of the projection optical system 11d ) via the projection optical system 11d , and the light transmitted through the projection optical system 11d projects the pattern of the mask M on the substrate. Thereby, a latent pattern can be formed on the resist layer on the substrate.

Moreover, in the 1st exposure apparatus 10 shown in FIG. 2, the above-mentioned mark forming part 12 (12a, 12b) and mark measuring part 13 (13a, 13b) are provided. The mark forming unit 12 irradiates energy such as a charged particle beam onto the substrate to form an alignment mark on the substrate. Hereinafter, the alignment mark formed on the substrate through the mark forming portion 12 may be referred to as “mark AM”. The mark measurement part 13 detects the mark AM formed on the board|substrate through the mark forming part 12, and measures the position of the mark AM. For example, the mark measurement unit 13 includes a range display (off-axis detector) having an image sensor and an optical element, and can be calculated based on the position of the substrate W (XY direction) and the position of the mark AM within the field of view of the range display. The position marked AM is measured. Here, in the example shown in FIG. 2 , although two each of the mark forming part 12 and the mark measuring part 13 are provided, they are not limited to two, and may be three or more, or may be one.

[About pattern forming precision] Next, the formation of the first pattern P1, the second pattern P2, and the mark AM on the substrate through the formation system 100 (the first exposure device 10 and the second exposure device 20) will be described. FIG. 3 is a diagram illustrating an arrangement example of the first pattern P1 , the second pattern P2 , and the marks AM formed on the substrate by the forming system 100 .

The first pattern P1 can pass through the pattern forming part 11 of the first exposure device 10 and be formed on the first region on the substrate. The second pattern P2 can pass through the pattern forming unit 21 of the second exposure device 20 and be formed in a second area on the substrate different from the first area where the first pattern P1 is formed. In the example shown in FIG. 3, although the first pattern P1 and the second pattern P2 are each formed on the substrate with the same size (size), they are not limited to this, and may be of different sizes, directions, and shapes. number.

In addition, the mark AM can be formed in a plurality of areas different from the area (first area, second area) where the first pattern P1 and the second pattern P2 are formed through the mark forming part 12 of the first exposure device 10 . In the example shown in FIG. 3 , the three marks AM1 to AM3 are formed near the corners of the substrate W so that they are not arranged on the same straight line. When the three marks AM1~AM3 are formed on the substrate in this way, the X-direction offset, Y-direction offset, rotation, X-direction magnification, and Y-direction magnification can be obtained from the measurement results of the positions of the three marks AM1-AM3 .

Here, the pattern forming accuracy of the forming system 100 (MMG technology) can be evaluated based on the overall size and position of the pattern formed on the substrate. The size of the entire pattern formed on the substrate can be defined, for example, by a first index TP (Total Pitch) indicating the length of the diagonal line of the entire pattern formed on the substrate. In the example shown in FIG. 3 , the end point EP1 of the lower right of the first pattern P1 formed on the substrate through the first exposure device 10 and the upper left of the second pattern P2 formed on the substrate through the second exposure device 20 The length of the straight line connecting the endpoints EP2 is defined as the first index TP. On the other hand, the position of the entire pattern formed on the substrate can be defined, for example, by the second index CS (Center Shift) indicating the position of the center point of the entire pattern formed on the substrate. In the example shown in FIG. 3, the center point of the straight line connecting the end point EP1 and the end point EP2 is defined as the second index CS.

[Conventional pattern forming method] Next, pattern forming processing using the above-described forming system 100 using the MMG technology will be described with reference to FIGS. 4 to 6 . Here, the pattern formation process demonstrated below using FIGS. 4-6D is the technique which can become the premise of this invention.

FIG. 4 is a flowchart illustrating a pattern forming process using the MMG technique. Each program shown in the flowchart of FIG. 4 can be executed based on the control by the main control unit 40 . FIG. 5 is a diagram illustrating a processing flow (data flow) in the forming system 100 . In addition, FIGS. 6A to 6D are diagrams showing how a pattern is formed on a substrate by a pattern forming process over time. 6A to 6D show the positional relationship between the substrate W and the mark measurement parts 13 a and 13 b , and the patterns formed on the substrate through the first exposure device 10 and the second exposure device 10 . Hereinafter, an example in which a first pattern is formed on each of Shot1 to Shot3 on the substrate through the first exposure device 10 and a second pattern is formed on Shot4 on the substrate through the second exposure device 20 will be described.

In S101, the board|substrate W is conveyed to the 1st exposure apparatus 10 by the conveyance part 30 (process (1) of FIG. 5). In S102, a plurality of marks AM are formed on the substrate through the mark forming parts 12a and 12b of the first exposure device 10 based on the information indicating the target position where the mark AM should be formed (for example, design data) (processing (2) in FIG. 5 ) . The formation of the marks AM passing through the mark forming portions 12 a and 12 b can be controlled based on the coordinate system of the first exposure device 10 . Thereby, as shown in FIG. 6A , three marks AM1 to AM3 can be formed near the corners of the substrate W. As shown in FIG.

In S103, based on the coordinate system of the first exposure device 10, the positions of the plurality of marks AM formed on the substrate in the procedure of S102 are measured through the mark measuring sections 13a and 13b of the first exposure device 10 (processing in FIG. 5 (3)). For example, as shown in FIG. 6B , while moving the mark measuring parts 13a, 13b and the substrate W relatively in the XY direction, the positions of the plurality of marks AM on the substrate are measured through the mark measuring parts 13a, 13b. In this way, the positions of the plurality of marks AM are measured by the mark measuring unit 13, so that the X-direction deviation and the Y-direction deviation of the substrate W in the first exposure device 10 can be obtained from the positional relationship of the plurality of marks AM. , Rotation (θ direction), X-direction magnification and Y-direction magnification. Moreover, the positional information of the several mark AM measured in S103 is notified to the 2nd exposure apparatus 20 (process (4) of FIG. 5). The positional information of the plurality of marks AM can be used to calculate a correction value as described later. The correction value is based on the temperature in the device (such as the temperature of the projection optical system) and the like in the first exposure device 10 and the second exposure device 20. A person who corrects the difference in magnification of the substrate W caused by the difference in the internal environment.

In S104, according to the first information (such as design data) showing the target size and target position where the first pattern P1 should be formed, the first pattern P1 is formed on the substrate through the pattern forming part 11 of the first exposure device 10 (Fig. process(5)). The target position refers to, for example, the relative position of the target relative to the mark AM. In addition, the formation of the first pattern P1 passing through the pattern forming part 11 can be performed based on the coordinate system of the first exposure device 10 . For example, in the process of S104, based on the position information of the plurality of marks AM measured in the process of S103, the substrate W is placed through the substrate stage 11e so that the first pattern P1 is formed at the target position indicated by the first information. Positioning (XY direction). And, as shown in FIG. 6C , according to the target size shown in the first information, a first pattern P1 is formed on each of Shot1˜Shot3 on the substrate.

In S105, the board|substrate W is conveyed from the 1st exposure apparatus 10 to the 2nd exposure apparatus by the conveyance part 30 (process (6)-(7) of FIG. 5). In the process of S105, for example, in order to make the direction of the second pattern formed on the substrate by the second exposure device 10 different from the direction of the first pattern formed on the substrate by the first exposure device 10, the substrate W is transported to the second pattern. Exposure device 20. Specifically, the substrate W carried out from the first exposure device 10 is rotated by 90 degrees through the transfer unit 30 and transferred to the second exposure device 20 .

In S106, based on the coordinate system of the second exposure device 20, the positions of the plurality of marks AM formed on the substrate in the procedure of S102 are measured through the mark measuring section 23 of the second exposure device 20 (processing of FIG. 5 (8 )). For example, as shown in FIG. 6D , while moving the mark measuring unit 23 and the substrate W relatively in the XY direction, the positions of the plurality of marks AM on the substrate are measured through the mark measuring unit 23 . In this way, the positions of the plurality of marks AM are measured by the mark measuring unit 23, so that the X-direction deviation and the Y-direction deviation of the substrate W in the second exposure device 20 can be obtained from the positional relationship of the plurality of marks AM. , Rotation (θ direction), X-direction magnification and Y-direction magnification.

In S107, the difference in magnification of the substrate W between the first exposure device 10 and the second exposure device 20 is obtained, and a correction value for correcting the difference in magnification is determined (processing (9) in FIG. 5 ). For example, the main control unit 40 obtains the magnification of the substrate W in the first exposure device 10 from the positional relationship of the plurality of marks AM measured in S103, and obtains the magnification of the substrate W in the second exposure device 10 based on the positional relationship of the plurality of marks AM measured in S106. The magnification of the substrate W of the device 20 . Thereby, the difference in magnification of the substrate W between devices can be obtained, and a correction value for correcting the difference in magnification can be determined.

In S108, according to the second information (such as design data) showing the target size and target position where the second pattern P2 should be formed, the second pattern P2 is formed on the substrate through the pattern forming part 21 of the second exposure device 20 (Fig. 5). process(10)). The target position refers to, for example, the relative position of the target relative to the mark AM. In addition, the formation of the second pattern P2 transmitted through the pattern forming part 21 can be performed based on the coordinate system of the second exposure device 20 . For example, in the program of S108, based on the position information of the plurality of marks AM measured in the program of S106, the substrate W is positioned through the substrate stage so that the second pattern P2 is formed at the target position indicated by the second information. (XY direction). And, according to the correction value determined in S107, the target size indicated by the second information is corrected, and the second pattern P2 is formed on the Shot4 on the substrate according to the corrected target size.

In S109 , the substrate W is carried out from the second exposure device 10 through the conveyance unit 30 . In S110, it is determined whether or not there is a substrate W (subsequent substrate W) to be subjected to the pattern forming process next. If there is a next board W, it returns to S101, and if there is no next board W, it ends.

In the pattern forming process described above, the first exposure device 10 forms a plurality of marks AM on the substrate, and each of the first exposure device 10 and the second exposure device 20 measures the positions of the plurality of marks AM. Then, from the measurement result, a correction value for correcting the magnification difference between the substrate W in the first exposure device 10 and the second exposure device 20 is determined, and a pattern is formed on the substrate according to the target size corrected by the correction value. Thereby, in the case of a difference in the internal environment of the first exposure device 10 and the second exposure device 20, the first index TP and the second index CP can still fall within the desired accuracy range, thereby improving the accuracy of pattern formation. . On the other hand, in the formation system 100 using the MMG technology, although the pattern formation on the substrate is efficiently shared by a plurality of devices, it is advantageous in terms of throughput, but it includes the process of forming the mark AM on the substrate. Some throughput will be reduced. Therefore, in forming the system 100, a further increase in throughput is required.

Therefore, the forming system 100 according to the present invention continuously performs the pattern forming process of reciprocating several substrates W, and when the positions of the plurality of marks AM formed on the substrate by the transmission mark forming part 12 are stabilized, the first exposure device is omitted. 10. Measurement of the positions of the plurality of marks AM. Thereby, the throughput can be improved.

Specifically, the mode of the pattern forming process for each substrate can include a first mode and a second mode. The first mode is a mode in which the position of the plurality of marks AM is measured in the first exposure device 10, and the second pattern P2 in the second exposure device 20 is controlled based on the measurement result of the measurement program. form. On the other hand, the second mode is a mode in which the measurement process in the first exposure device 10 is omitted, and the formation of the second pattern P2 in the second exposure device 20 is controlled based on the measurement result of the previous measurement process. When the variation in the measurement results of the measurement program in the past plurality of pattern forming processes in the first mode falls within the allowable range, the mode of the pattern forming process is shifted from the first mode to the second mode.

For example, in an exposure apparatus, when a plurality of substrates W are continuously exposed, the temperature inside the apparatus (for example, the temperature of the projection optical system) rises accordingly, and the temperature of the substrate W transported into the apparatus also rises, causing thermal expansion. . Generally, when the temperature in the device rises to a predetermined temperature, it becomes saturated and stable. Therefore, the thermal expansion of the substrate W becomes saturated and stable, and the positions of the plurality of marks AM formed on the substrate through the mark forming part 12 are also stable. That is, after the thermal expansion of the substrate W is saturated, the plurality of marks AM can be formed on the plurality of substrates W at substantially the same position on the substrate. For this reason, the positional information of the plurality of marks AM measured during the pattern forming process of one substrate W can be utilized in the pattern forming process of the subsequent substrate W.

<First Embodiment> The pattern forming process of the first embodiment using the above-described forming system 100 using the MMG technology will be described with reference to FIGS. 7 to 8 . FIG. 7 is a flowchart illustrating a pattern forming process using the MMG technique. Each program shown in the flowchart of FIG. 7 can be executed based on the control by the main control unit 40 . FIG. 8 is a diagram illustrating a processing flow (data flow) in the forming system 100 .

In S201, the board|substrate W is conveyed to the 1st exposure apparatus 10 by the conveyance part 30 (process (1) of FIG. 8). In S202, a plurality of marks AM are formed on the substrate by the mark forming unit 12 of the first exposure device 10 (processing (2) in FIG. 8 ). The procedures of S201 to S202 are the same as the procedures of S101 to S102 shown in the flow chart of FIG. 4 , so detailed descriptions are omitted here.

In S203 , it is determined whether the positions of the plurality of marks AM formed on the substrate by the mark forming part 12 are stable (that is, the stability of the positions of the marks AM formed on the substrate). This determination can be made, for example, by the main control unit 40 . When it is determined that the positions of the plurality of marks AM formed on the substrate are not stable, the process proceeds to S204, and the pattern forming process in the first mode for measuring the positions of the plurality of marks AM is executed. On the other hand, when it is determined that the positions of the plurality of marks AM are stable, the process proceeds to S205, and the pattern forming process in the second mode omitting the measurement of the positions of the plurality of marks AM is performed.

Here, an example of determining the stability of the position of the mark AM will be described. For example, the main control unit 40 acquires the measurement result of the position of the mark AM for each of the plurality of substrates W on which the measurement program of the mark AM has been performed in the past. And, when the variation of the measurement results of the past plurality of measurement procedures falls within the allowable range, it is determined that the positions of the plurality of marks formed on the substrate by the mark forming part 12 are stabilized.

The specific measurement results (dx, dy, dθ) of the position of the marker AM and the tolerance range (tx, ty, tθ) of the fluctuation of the measurement results are shown below. In the following example, as the past measurement results of the position of the mark AM, the measurement results of the substrate W subjected to the pattern forming process last (the last substrate W) and the substrate W subjected to the pattern forming process before it are shown. measurement results. In addition, as a measurement result, the amount of deviation between the position of the mark AM measured by the mark measuring unit 13 and the target position (reference) where the mark AM should be formed is used. Note that the number of measurement results used for comparison with the measurement results of the last substrate W (that is, the number of substrates W subjected to the patterning process before the last substrate W) is set to three. Therefore, in the following example, the measurement results for the substrate W that is one to three substrates earlier than the last substrate W are shown. In the case of the following example, all the differences between the measurement results of the last substrate W and the measurement results of one to three previous substrates W fall within the allowable range, so it can be determined that the transmission mark forming part 12 is formed The positions of the marks on the substrate are stabilized.

･Allowable range of fluctuations in measurement results Allowable range tx in X direction: 2μm Allowable range in Y direction ty: 2μm Allowable range tθ in θ direction: 2 degrees Number of conventional substrates to be compared: 3 ･Measurement results of the final substrate Offset dx in X direction: 1μm Offset dy in Y direction: 1μm Offset dθ in θ direction: 1 degree ･Measurement results on the substrate side one month ago Offset dx in X direction: 1μm Offset dy in Y direction: 1μm Offset dθ in θ direction: 1 degree ･Measurement results for two boards ago Offset dx in X direction: 1.5μm Offset dy in Y direction: 1.5μm Offset dθ in θ direction: 1.5 degrees ･Measurement results for boards three years ago Offset dx in X direction: 2μm Offset dy in Y direction: 2μm Offset dθ in θ direction: 2 degrees

In the above-mentioned example, although the measurement result of the last substrate W was compared with the measurement result of the substrate W before it, the present invention is not limited thereto. For example, when the average of the measurement results of the past plurality of substrates W including the last substrate W falls within the allowable range, it may be determined that the positions of the plurality of marks have stabilized. In addition, the measurement results of the plurality of marks AM in the first exposure device 10, the state of the environment in the device, the device settings at the time of mark measurement, etc. may be continuously accumulated, and it may be determined that there are a plurality of marks AM based on the results of analysis of the tendency of the measurement results. The position of the marker is stabilized. As for the analysis means of the tendency of the measurement results, for example, approximate data of the measurement results of the past substrate W can be used, or the results of analyzing by machine learning can be used by accumulating the measurement results of a plurality of exposure devices and the data of the internal environment of the devices. Furthermore, when the measurement results are performed on a predetermined number of substrates, the measurement results of the nearest several substrates W may be compared with each other, and when the difference falls within the allowable range, it is determined that the positions of the plurality of marks have been changed. Stablize.

As another method of stability judgment, a method of performing stability judgment based on the physical relative positions of the plurality of mark forming portions 12 a and 12 b provided in the first exposure device 10 may also be employed. In the case of this embodiment, the plurality of mark forming parts 12a, 12b are attached to the projection optical system 11d, and the shape of the projection optical system 11d changes due to the temperature fluctuation of the projection optical system 11d, and the plurality of mark forming parts 12a, 12b The relative position of the changes. For this reason, it is also possible to provide a measurement mechanism for measuring the relative positions of the plurality of mark forming parts 12a, 12b. Based on the measurement results of the measurement mechanism, when the fluctuation of the relative positions falls within the allowable range, it is judged that there are a plurality of markers. The position of the marker is stabilized. Moreover, you may provide the measurement mechanism which measures the thermal deformation amount of 11 d of projection optical systems, and may judge that the position of a some mark is stabilized based on the measurement result.

S204 is a procedure performed in the pattern forming process in the first mode, and is the same procedure as S103 shown in the flowchart of FIG. 4 . In S204, the positions of the plurality of marks AM formed on the substrate in the procedure of S202 are measured by the mark measuring section 13 of the first exposure device 10 (processing (3-2) in FIG. 8 ), and the measured plurality The positional information of each mark AM is notified to the second exposure device 20 (processing (4) in FIG. 8 ).

S205 is processing performed in the pattern forming processing in the second mode. In S205, the measurement of the position of the mark AM by the mark measuring unit 13 is omitted (processing (3-1) in FIG. 8 ), and the measurement result (position information of a plurality of marks AM) obtained in the previous measurement procedure is sent to the The second exposure device 20 notifies (processing (4) of FIG. 8 ).

S206 to S208 are the same procedures as S104 to S106 shown in the flowchart of FIG. 4 , and therefore description of the procedures will be omitted. In addition, the procedure of S206-S208 corresponds to process (5)-(8) of FIG. 8.

In S209, the difference in magnification of the substrate W between the first exposure device 10 and the second exposure device 20 is obtained, and a correction value for correcting the difference in magnification is determined (processing (9) in FIG. 8 ). For example, the main control unit 40 obtains the magnification of the substrate W in the first exposure device 10 based on the position information of the plurality of marks AM notified from the first exposure device 10 in S204 or S205 . In addition, the magnification of the substrate W in the second exposure device 20 is obtained from the position information of the plurality of marks AM measured in S208. Thereby, the difference in magnification of the substrate W between devices can be obtained, and a correction value for correcting the difference in magnification can be determined.

S210 is the same procedure as S108 shown in the flowchart of FIG. 4 and corresponds to the process (10) of FIG. 8 . In S210, according to the correction value determined in S209, the target size indicated by the second information is corrected, and the second pattern P2 is formed on the substrate according to the corrected target size. In S211 , the substrate W is carried out from the second exposure device 10 through the conveyance unit 30 . In S212, it is determined whether or not there is a substrate W (subsequent substrate W) to be subjected to the patterning process next. Return to S201 if there is a next substrate W, and end if there is no next substrate W. Here, when it is determined in S203 that the positions of the plurality of marks formed on the substrate by the mark forming unit 12 have stabilized, the second mode is also selected for the next substrate W.

As described above, in the present embodiment, it is judged whether the positions of the plurality of marks AM formed on the substrate through the mark forming part 12 are stable, and when it is determined that the positions of the plurality of marks AM are stable, the marks through the mark measuring part 13 are omitted. Measurement of AM. Thereby, the time required for the measurement of the mark AM by the mark measuring part 13 can be reduced, and the throughput can be improved.

<Second Embodiment> The pattern forming process of the second embodiment using the above-described forming system 100 using the MMG technology will be described with reference to FIGS. 9A to 10 . In the second embodiment, in the second mode, the measurement procedure of the mark AM is performed in the first exposure device 10 (mark measurement unit 13 ) for each of a plurality of substrates set in advance. And, when the fluctuation of the measurement result of the measurement program performed in the second mode does not fall within the allowable range, the mode of the pattern forming process is shifted from the second mode to the first mode.

9A-9B are flowcharts illustrating a pattern forming process using the MMG technique. Each program shown in the flowcharts of FIGS. 9A to 9B can be executed based on the control by the main control unit 40 . FIG. 10 is a diagram illustrating a processing flow (data flow) in the forming system 100 . Here, with respect to the flowchart shown in FIG. 7 , S201 to S212 are the same procedures in the flowcharts shown in FIGS. 9A to 9B , and S213 to S217 are newly added. S213 to S217 are procedures for judging whether to shift from the second mode to the first mode, corresponding to the processing (4) in FIG. 10 . Hereinafter, differences from the flowchart shown in FIG. 7 will be described.

When it is determined in S203 that the positions of the plurality of marks AM formed on the substrate are not stable, the process proceeds to S204, and the pattern forming process in the first mode is executed. On the other hand, when it is determined that the positions of the plurality of marks AM are stabilized, the process proceeds to S213, and the pattern forming process in the second mode is executed.

In S213, it is determined whether or not it is the substrate W on which the measurement of the position of the mark AM passing through the mark measurement unit 13 (measurement program) is performed. As mentioned above, in the 2nd mode, the measurement process of the mark AM in the mark measurement part 13 is performed for each of the several board|substrates set beforehand. The process proceeds to S205 if it is not the substrate W on which the measurement process is performed, and proceeds to S214 if it is the substrate W on which the measurement process is performed.

In S214, the position of the plurality of marks AM formed on the substrate in the procedure of S202 is measured by the mark measuring section 13 of the first exposure device 10, and the position information of the measured plurality of marks AM is sent to the second exposure device. 20 notices. In S215, it is judged whether the variation of the measurement result of the measurement program performed in the second mode falls within the allowable range. Specifically, in the second mode, it is determined whether or not the difference between the measurement result of the measurement program performed this time and the measurement result of the measurement program performed last time falls within the allowable range. When the variation of the measurement result falls within the allowable range, the process proceeds to S216, and after it is decided to perform the patterning process on the next substrate W in the second mode, the process proceeds to S206. On the other hand, when the variation of the measurement result is not within the allowable range, the process proceeds to S217, and after determining to perform the patterning process on the next substrate W in the first mode, the process proceeds to S206.

Here, in the above example, whether or not to shift to the first mode is determined based on a change in the measurement result of the measurement program performed in the second mode, but the present invention is not limited thereto. For example, a mechanism for measuring the temperature of the substrate or the temperature in the device may be provided, and the second mode may be switched to the first mode when the temperature fluctuation of the substrate or the temperature fluctuation in the device is not within the allowable range. In addition, a mechanism for measuring the focus characteristic of the projection optical system 11d may be provided, and when the variation of the focus characteristic does not fall within the allowable range, the second mode may be shifted to the first mode. In addition, when the fluctuation|variation of the relative position of several mark forming part 12a, 12b does not fall within the allowable range, you may transfer from 2nd mode to 1st mode.

As described above, in the present embodiment, it is judged whether or not the variation in the measurement result of the measurement program performed in the second mode falls within the allowable range. Then, the second mode is continued when the fluctuation of the measurement result falls within the allowable range, and shifts to the first mode when the fluctuation of the measurement result does not fall within the allowable range. Thereby, after shifting to the second mode, it is also possible to shift to the first mode when the positions of the plurality of marks AM formed on the substrate by the mark forming part 12 become unstable, so that the accuracy of pattern formation on the substrate can be improved. promote.

<Embodiments of the manufacturing method of the article> The method of manufacturing an article according to the embodiment of the present invention is suitable for manufacturing articles such as microdevices such as semiconductor devices and elements having a fine structure. The manufacturing method of the article of the present embodiment includes the following steps: forming a latent image pattern on the photosensitive agent coated on the substrate using the above-mentioned exposure device (exposing the substrate); and developing the substrate on which the latent image pattern is formed by this procedure ( processing). Furthermore, such manufacturing methods include other well-known procedures (oxidation, film formation, evaporation, doping, planarization, etching, resist stripping, dicing, bonding, packaging, etc.). The method of manufacturing an article according to this embodiment is advantageous in at least one of article performance, quality, productivity, and production cost compared to conventional methods.

＜Other Examples＞ In the present invention, a program for realizing one or more functions of the above-mentioned embodiments may be provided to a system or device via a network or a storage medium, and one or more processors in a computer of the system or device may be used to read the program And the processing performed is thus achieved. In addition, it can also be realized by a circuit (for example, ASIC) that realizes one or more functions.

The invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Therefore, the scope of the patent application is drafted to disclose the scope of the invention.

10: The first exposure device 11: Pattern forming department 12:Mark forming part 13: Mark measurement department 20: The second exposure device 21: Pattern forming department 23: Mark measurement department 30:Transportation Department 40: Main Control Department 100:Formation System

The drawings are included in the specification and constitute a part thereof, illustrate embodiments of the present invention, and serve to explain the principle of the present invention together with the description. [Fig. 1] A schematic diagram showing the overall configuration of the formation system. [ Fig. 2 ] A diagram showing a configuration example of a first exposure device. [ Fig. 3 ] A diagram showing an arrangement example of the first pattern P1, the second pattern P2, and the marks AM formed on the substrate. [ Fig. 4 ] A flow chart showing pattern forming processing. [ Fig. 5 ] A diagram showing the processing flow of the forming system. [FIG. 6A] A graph showing how a pattern is formed on a substrate over time. [FIG. 6B] A graph showing how a pattern is formed on a substrate over time. [FIG. 6C] A graph showing how a pattern is formed on a substrate over time. [FIG. 6D] A graph showing how a pattern is formed on a substrate over time. [ Fig. 7] Fig. 7 is a flowchart showing pattern forming processing in the first embodiment. [ Fig. 8] Fig. 8 is a diagram showing a processing flow of the forming system in the first embodiment. [FIG. 9A] A flowchart showing pattern forming processing in the second embodiment. [ Fig. 9B ] A flowchart showing pattern forming processing in the second embodiment. [ Fig. 10 ] A diagram showing a processing flow of the forming system in the second embodiment.

10: The first exposure device

11: Pattern forming department

12:Mark forming part

13: Mark measurement department

14: Control Department

20: The second exposure device

21: Pattern forming department

23: Mark measurement department

24: Control Department

30:Transportation Department

40: Main Control Department

100:Formation System

W: Substrate

Claims (12)

A forming method for forming a pattern on one layer of a substrate using a first device and a second device, wherein a process including the following procedure is performed for each substrate: a mark forming process, which is to form a mark on a substrate by the first device or; the first forming process, which is to form the first pattern on the substrate in the aforementioned first device; and the second forming process, which is to form the second pattern on the substrate in the aforementioned second device; the mode of the aforementioned processing , including a first mode of controlling the formation of the second pattern based on a measurement program for measuring the position of the mark in the first device and controlling the formation of the second pattern based on the measurement result of the measurement program; The measurement result of the program controls the formation of the second pattern in the second mode, and the complex number in the first mode is obtained based on the difference between the measurement results of the measurement program in the processing of the plurality of times in the first mode. When the fluctuation of the measurement result of the measurement program in the next processing is within the allowable range, the mode of the processing is shifted from the first mode to the second mode. The forming method according to claim 1, wherein, in the second mode, the processing on each of the plurality of substrates includes the measurement program, and the variation of the measurement result of the measurement program in the second mode If it is not within the allowable range, the mode of the aforementioned processing is shifted from the second mode to the aforementioned first mode. The forming method according to claim 1, wherein the processing further includes a second measurement program for measuring the position of the mark in the second device, and in the second forming program, the control is further performed based on the measurement result of the second measurement program. Formation of the aforementioned second pattern. The forming method according to claim 3, wherein, in the second forming process, the control of the above-mentioned Formation of the second pattern. The forming method according to claim 4, wherein, in the second forming procedure, the correction value for correcting the magnification difference between the substrate of the first device and the second device is determined based on the difference, and the display is based on the correction value As a result of correcting the information of the target position for forming the second pattern, the second pattern is formed on the substrate. The forming method according to claim 1, wherein the first pattern and the second pattern have the same shape and are formed in different directions on the substrate. The forming method according to claim 1, wherein, in the mark forming process, the mark is formed on the substrate by the plurality of forming parts of the first device, and the fluctuation of the relative positions of the plurality of forming parts falls within an allowable range , transfer the mode of the aforementioned processing from the aforementioned first mode to the aforementioned second mode model. The forming method according to claim 7, wherein when the variation of the relative positions of the plurality of forming parts does not fall within an allowable range, the mode of the processing is shifted from the second mode to the first mode. A method of manufacturing an article, comprising: a forming procedure for forming a pattern on a substrate using the forming method according to any one of claims 1 to 8; and a processing procedure for forming the pattern on the aforementioned substrate in the aforementioned forming procedure A person who performs processing; manufactures an article from the aforementioned substrate processed in the aforementioned processing procedure. A forming device that forms a pattern on a substrate, comprising: a forming unit that forms a mark on the substrate; a measuring unit that measures the position of the mark formed on the substrate through the forming unit; and control a part controlling the process of forming a pattern on the substrate; forming a plurality of patterns on one layer on the substrate using the forming device and a forming device different from the forming device, the control part according to the mode of the process , notifying information to the above-mentioned different forming devices, as the mode of the above-mentioned processing, including: a first mode, which is to perform a measurement program for measuring the position of the mark through the above-mentioned measurement unit, and transfer the measurement result of the measurement program to the above-mentioned different form the device notifier; and 2 mode, which omits the measurement program and notifies the measurement result of the previous measurement program to the different forming device; The difference between the measurement results is to obtain the variation of the measurement results of the aforementioned measurement program in the plurality of times of the aforementioned processing in the aforementioned first mode, and when the variation of the measurement results of the aforementioned measurement procedures falls within the allowable range, the aforementioned processing The mode of is shifted from the aforementioned first mode to the aforementioned second mode. A forming device for forming a pattern on a substrate, including a control unit for controlling a process of forming a pattern on the substrate, and forming one layer of the substrate using the forming device and a forming device different from the forming device The plurality of patterns, as the mode of the aforementioned processing, includes: the first mode, which is that, in the case where the measurement program for measuring the position of the mark on the aforementioned substrate is performed in the aforementioned different forming apparatus, according to the measurement program The processor is controlled by measuring the result; and the second mode is that in the case of omitting the measurement procedure in the aforementioned different forming apparatus, control is based on the measurement result of the previous measurement procedure performed in the aforementioned different forming apparatus The processor; the control unit obtains the measurement program in the plurality of processing in the first mode based on the difference between the measurement results of the measurement program in the processing in the first mode. Changes in the measurement results of the above-mentioned measurement procedures fall within the allowable range In this case, the mode of the aforementioned processing is shifted from the aforementioned first mode to the aforementioned second mode. A forming system for forming a pattern on one layer on a substrate using a first device and a second device, comprising: the first device for forming a first pattern on the substrate; and the second device for forming a second pattern on the substrate The aforementioned second device; and a control unit that controls the process of forming a pattern on the aforementioned substrate; the aforementioned first device includes: a forming unit that forms a mark on the aforementioned substrate; The measurement unit that measures the position of the mark; the mode of the processing includes: a first mode that performs a measurement program that measures the position of the mark through the measurement unit, and controls the first mode based on the measurement result of the measurement program. 2. A pattern maker; and a second mode, which omits the measurement program and controls the second pattern maker based on the measurement results of the previous measurement program; The difference between the measurement results of the aforementioned measurement program in the aforementioned process, the variation in the measurement result of the aforementioned measurement program in the plurality of times of the aforementioned processing in the aforementioned first mode is obtained, and the variation in the measurement result of the aforementioned measurement program falls into In the case of an allowable range, the mode of the aforementioned processing is shifted from the aforementioned first mode to the aforementioned second mode.

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