TW202022143A - Deposition apparatus and deposition method - Google Patents

Abstract

Subject of this invention is to form resin layer with good film thickness distribution on a substrate. In a deposition apparatus, a cooling stage has a supporting surface which supports a substrate and a side surface portion connected to the supporting surface, and is configured so that an outer peripheral end of the substrate supported by the supporting surface protrudes outward from the side surface portion. A deposition-preventing frame portion is annular, is disposed so as to surround the side surface portion of the cooling stage, a recess portion is provided at a position facing the outer peripheral end of the substrate, and the side surface portion is surrounded by the recess portion. A gas supply unit supplies raw material gas including energy beam curable resin toward the supporting surface. An irradiation source faces the supporting surface and irradiates energy beam which cures the energy beam curable resin toward the supporting surface. A vacuum tank stores the cooling stage, the deposition-preventing frame portion, the gas supply unit, and the irradiation source.

Description

Film forming device and film forming method

The present invention relates to a film forming device and a film forming method.

When an energy ray hardening resin such as an ultraviolet hardening resin is hardened to form a resin layer on a substrate, generally, the following two steps are required. That is, the step of supporting the substrate by a cooling stage and supplying the raw material gas containing the resin to the substrate supported on the cooling stage, and irradiating light such as ultraviolet rays on the substrate to form a hardened substrate on the substrate Resin layer steps.

Especially recently, a film forming apparatus is provided that does not perform these plural steps separately in different vacuum chambers, but performs the step of supplying the raw material gas onto the substrate in one vacuum chamber and the step of applying ultraviolet rays on the substrate. A step of forming a hardened resin layer (for example, refer to Patent Document 1). [Prior Technical Literature] [Patent Literature]

Patent Document 1: JP 2013-064187 A.

[Problems to be solved by the invention]

However, under a reduced pressure atmosphere, the raw material gas easily adheres to the cooling table corresponding to the side portion of the substrate (the part of the front end from the outer peripheral end of the substrate). When the raw material gas hardens and becomes thicker as a resin layer, a phenomenon in which the substrate climbs onto the resin layer may occur. As a result, the cooling effect of the cooling table on the substrate is reduced, and the in-plane temperature distribution of the substrate becomes non-uniform, and the desired film thickness distribution cannot be obtained.

As a means to solve this problem, there is a method of installing an anti-blocking plate surrounding the side of the cooling table around the cooling table. However, even if such an anti-impact plate is provided, the resin layer will be deposited on the anti-impact plate at the side of the substrate, and as a result, the same phenomenon may occur.

In view of the above circumstances, the object of the present invention is to provide a film forming apparatus and a film forming method for forming a resin layer on a substrate with a good film thickness distribution. [Means to solve the problem]

In order to achieve the above-mentioned object, a film forming apparatus according to an aspect of the present invention includes a cooling table, an anti-sticking frame, a gas supply part, an irradiation source, and a vacuum chamber. The cooling stage has a support surface for supporting the substrate and a side surface connected to the support surface, and is configured such that the outer peripheral end of the substrate supported by the support surface protrudes from the side surface. The anti-blocking frame has a ring shape and is arranged to surround the side surface of the cooling stage. A recess is provided at a position facing the outer peripheral end of the substrate, and the side surface is surrounded by the recess. The gas supply part supplies a raw material gas containing an energy ray curable resin to the support surface. The irradiation source faces the support surface, and irradiates the support surface with energy rays that harden the energy ray hardening resin. The vacuum chamber accommodates the cooling table, the anti-blocking frame portion, the gas supply portion, and the irradiation source.

According to this film forming apparatus, since the anti-sticking frame is arranged so as to surround the side surface of the cooling table, the resin layer is not easily deposited on the cooling table. Furthermore, since the recessed portion is provided at the position facing the outer peripheral end of the substrate in the anti-sticking frame portion, even if the resin layer is deposited on the anti-sticking frame portion, the resin layer does not reach the substrate and the substrate is not easily separated from the cooling table. Thereby, the in-plane temperature distribution of the substrate becomes uniform, and the resin layer can be formed on the substrate with a good film thickness distribution.

In the film forming apparatus, a first gap is provided between the side portion of the cooling table and the anti-sticking frame portion; a second gap is provided between the anti-sticking frame portion and the substrate; and the cooling table is provided with : A gas injection mechanism that injects an inert gas from the second gap to the side wall of the vacuum chamber through the first gap.

According to this film forming apparatus, the source gas is pushed back from the stage toward the side wall of the vacuum chamber by the inert gas injected from the first gap between the stop frame and the substrate. Thereby, the resin layer is not easily formed in the first gap, and the substrate is not easily separated from the cooling table more reliably.

In the film forming apparatus, the concave portion provided in the anti-sticking frame portion is constituted by the following members: a bottom surface portion; a side wall portion connected to the bottom surface portion and opposed to the side surface portion of the cooling table; and an outer periphery Part, which is connected to the bottom face part and surrounds the bottom face part and the side wall part; a partition part facing the side wall part and surrounding the cooling platform is attached to the recess part; between the partition part and the side wall part A third gap is provided side by side with the first gap; a fourth gap is provided between the partition portion and the substrate; the gas injection mechanism is moved from the second gap and the fourth gap through the first gap The inert gas is sprayed toward the side wall of the vacuum chamber, and the inert gas is sprayed toward the side wall from the fourth gap through the third gap.

According to this film forming apparatus, the inert gas is introduced not only into the first gap but also into the third gap. Thereby, it is difficult for the raw material gas to adhere to the side wall constituting the recess, and the resin layer is difficult to form on the side wall. As a result, the substrate cannot be easily separated from the cooling table more reliably.

In the film forming apparatus, the width of the fourth gap may be wider than the width of the second gap.

According to this film forming apparatus, since the width of the fourth gap is wider than the width of the second gap, even if the resin layer is formed on the upper part of the partition, the resin layer cannot easily reach the substrate. As a result, the substrate cannot be easily separated from the cooling table more reliably.

In the film forming apparatus, the supporting surface of the cooling table is rectangular; the gas injection mechanism can independently control the flow rate of the inert gas flowing in the third gap opposite to the corner of the supporting surface, and The flow rate of the inert gas flowing in the third gap facing the side of the support surface other than the corner.

According to this film forming apparatus, even if the concentration of the source gas existing near the corner of the cooling table is different from the concentration of the source gas existing near the edge of the cooling table, it is possible to independently control the concentration of the source gas near the corner and the edge. The flow of inert gas flowing in the third gap nearby. Thereby, it is possible to uniformly control the thickness of the resin layer deposited in the recesses near the corners and the sides, respectively. As a result, the substrate cannot be easily separated from the cooling table more reliably.

In the film forming method according to an aspect of the present invention, the support surface of the cooling table having a support surface for supporting a substrate and a side surface connected to the support surface is such that the outer peripheral end of the substrate protrudes from the side surface. Supports the substrate; the ring-shaped adhesion prevention frame surrounding the side surface of the cooling table is provided with a recessed portion at a position opposite to the outer peripheral end of the substrate, and the side surface portion is surrounded by the recessed portion The protective frame is arranged around the cooling stage; supplying a raw material gas containing energy ray hardening resin to the substrate; irradiating the substrate with energy rays that harden the energy ray hardening resin, thereby forming a resin layer on the substrate.

According to this film forming method, the anti-sticking frame is arranged so as to surround the side surface of the cooling table, so that the resin layer is not easily deposited on the cooling table. Furthermore, since the recessed portion is provided at the position facing the outer peripheral end of the substrate in the anti-sticking frame portion, even if the resin layer is deposited on the anti-sticking frame portion, the resin layer does not reach the substrate and the substrate is not easily separated from the cooling table. Thereby, the in-plane temperature distribution of the substrate becomes uniform, and the resin layer can be formed on the substrate with a good film thickness distribution. [Effect of invention]

As described above, according to the present invention, a film forming apparatus and a film forming method capable of forming a resin layer on a substrate with a good film thickness distribution are provided.

Hereinafter, an embodiment of the present invention will be described with reference to the drawings. XYZ axis coordinates are sometimes imported into each drawing. For example, the X-axis direction and the Y-axis direction in the figure indicate directions orthogonal to each other, and these directions indicate the horizontal direction in the embodiment. The Z-axis direction indicates a direction orthogonal to the X-axis direction and the Y-axis direction, and indicates the vertical direction (gravity direction).

In addition, the same member or member having the same function may be given the same reference numeral, and the description may be appropriately omitted after the member is described.

(Film forming device)

Fig. 1 is a schematic cross-sectional view of the film forming apparatus of this embodiment. Fig. 2(a) is a schematic plan view of the first region S1 of Fig. 1 viewed from a vertical direction. Fig. 2(b) is a schematic cross-sectional view taken along line A-A in Fig. 2(a).

The film forming apparatus 1 is a film forming apparatus for forming an ultraviolet curable resin layer as an energy ray curable resin on a substrate W. The film forming apparatus 1 includes a vacuum chamber 10, a cooling table 15, a blocking frame portion 18, a partition wall 16, a gas supply portion 13, an irradiation source 14, and a gas supply line 100. The substrate W is, for example, a glass substrate, a semiconductor substrate, etc., and the planar shape of the substrate W may be, for example, a rectangle or a circle.

The vacuum chamber 10 is a vacuum container whose upper part is atmospheric and the lower part can maintain a reduced pressure state. The vacuum chamber 10 has a first chamber body 11 and a second chamber body 12, which is disposed on the first chamber body 11. The vacuum tank 10 accommodates the cooling table 15, the anti-blocking frame part 18, the gas supply part 13, the irradiation source 14 and the partition wall 16.

In the vacuum chamber 10, the first chamber body 11 and the second chamber body 12 are divided by a partition wall 16. The inside of the first chamber body 11 constitutes a first area S1. The inside of the second chamber body 12 constitutes a second area S2.

The pressure of the first region S1 is adjusted to a predetermined vacuum degree by the vacuum exhaust system 19. The degree of vacuum during pressure adjustment is not particularly limited, but is usually set to 1×10 ^-3 Pa or more and 500 Pa or less. Furthermore, a gas supply unit 13 is arranged in the first region S1. The second area S2 is maintained in, for example, atmospheric gas. In the second area S2, an irradiation source 14 serving as an ultraviolet light source is arranged opposite to the cooling table 15.

The external shape of the vacuum chamber 10 when viewed from the Z-axis direction is designed to match the external shape of the cooling table 15, for example. For example, the external shape of the vacuum chamber 10 is rectangular. However, the outer shape is not limited to rectangular.

The cooling table 15 is attached to the first chamber body 11 via a sealing mechanism not shown or the like, and is installed in the first region S1. The cooling table 15 has a substrate support table 151 for arranging the substrate W. In the cooling stage 15, the substrate support stage 151 is arranged in the approximate center of the first region S1, and has a support surface 151a that supports the substrate W as the processing target.

The supporting surface 151a is in the X-Y axis plane orthogonal to the Z axis direction, and the shape is not particularly limited, and is rectangular. In addition to the supporting surface 151a, the cooling table 15 also has a side surface 151w connected to the supporting surface 151a. Furthermore, the cooling stage 15 is configured such that when the substrate W is supported on the support surface 151a, the outer peripheral end E of the substrate W protrudes from the side surface 151w. In other words, the area of the support surface 151a is smaller than the area of the substrate W.

Furthermore, the substrate support table 151 has a built-in cooling mechanism (temperature: -30°C or higher to 0°C or lower), not shown, for cooling the substrate W to a predetermined temperature. Thereby, the substrate W is cooled to a predetermined temperature by the cooling stage 15, and the ultraviolet curable resin in the raw material gas is cooled and condensed on the substrate W. As a result, an ultraviolet curable resin layer can be formed on the substrate W. In order to form an ultraviolet curable resin layer with a uniform film thickness on the substrate W, it is desirable that the in-plane temperature distribution of the substrate W when it is supported on the cooling table 15 is as uniform as possible.

In addition, the cooling table 15 can raise and lower the substrate support table 151 in the Z-axis direction by a driving mechanism not shown. Moreover, the cooling table 15 may also be equipped with the rotation mechanism which rotates the support surface 151a in the X-Y axis plane.

The anti-sticking frame 18 is arranged so as to surround the side surface 151w of the cooling table 15. That is, the anti-sticking frame portion 18 is a ring-shaped member in the X-Y axis plane. The outer shape in the X-Y axis plane of the anti-stroke frame portion 18 is, for example, a rectangle. A recessed portion 181h is provided at a position opposed to the outer peripheral end E of the substrate W in the blocking frame portion 18. The recessed portion 181h is composed of a bottom surface portion 181b, a side wall portion 181w, and an outer peripheral portion 181e.

The bottom portion 181b is a portion of the recess 181h that becomes the base. The side wall portion 181w is connected to the bottom surface portion 181b and is a partition portion facing the side surface portion 151w of the cooling table 15. The outer peripheral portion 181e is connected to the bottom surface portion 181b and surrounds the thick portion of the bottom surface portion 181b and the side wall portion 181w. Since the anti-sticking frame portion 18 is ring-shaped in the X-Y axis plane, the recessed portion 181h is also configured as a ring shape in the X-Y axis plane. Thereby, the side surface part 151w of the cooling table 15 becomes the structure enclosed by the recessed part 181h.

Furthermore, the anti-sticking frame portion 18 is not in close contact with the side surface 151w of the cooling table 15, and a gap width of 0.01 mm or more is provided between the side portion 151w of the cooling table 15 and the anti-sticking frame portion 18 (side wall portion 181w). The first gap C1 is 0.5mm or less. The adhesion prevention frame portion 18 and the substrate W are not in close contact, and a second gap C2 having a gap width of 0.01 mm or more and 0.2 mm or less is provided between the adhesion prevention frame portion 18 (side wall portion 181w) and the substrate W. The second gap C2 communicates with the first gap C1. In addition, the second gap C2 is also the difference in height between the side wall portion 181w and the supporting surface 151a.

The outer frame member 20 is arranged so as to surround the cooling table 15 and the anti-sticking frame 18. That is, the outer frame member 20 has a ring shape in the X-Y axis plane. The outer shape in the X-Y axis plane of the outer frame member 20 is, for example, a rectangle. The outer frame member 20 is provided with an exhaust groove 201 surrounding the cooling table 15 and the anti-sticking frame 18. The exhaust groove 201 communicates with the first area S1 and sucks the gas existing in the first area S1. Then, the gas system existing in the first region S1 is exhausted to the outside of the vacuum chamber 10 through the exhaust groove 201 by the vacuum exhaust system 19.

The gas supply part 13 is connected to the gas supply line 100 and generates a raw material gas containing ultraviolet curable resin. The gas supply part 13 has a plurality of branch pipe parts 131. The gas supply part 13 may be a shower plate (shower plate) mentioned later. The irradiation source 14 irradiates ultraviolet rays UV as energy rays toward the support surface 151a. Thereby, the ultraviolet curable resin coated on the substrate W is cured. The irradiation source 14 is arranged in the second area S2. The reflection plate 17 collects the ultraviolet rays UV irradiated from the irradiation source 14 on the substrate W efficiently.

The partition wall 16 is located between the first chamber body 11 and the second chamber body 12. The partition wall 16 partitions the inside of the vacuum chamber 10, and has a plate-like structure including an X-Y axis plane orthogonal to the Z axis direction. The partition wall 16 has a transmission portion 161 that transmits ultraviolet rays UV. The transparent portion 161 may be the entire partition wall 16 or a part of the partition wall 16. The transparent portion 161 is constituted by, for example, rectangular windows provided at four locations. Furthermore, the material constituting the transmission portion 161 is not particularly limited as long as it is a material that transmits ultraviolet rays. For example, quartz glass is used. The partition wall 16 can block the ambient gas in the first area S1 and the second area S2, and the ultraviolet rays UV irradiated from the irradiation source 14 can be transmitted.

As the ultraviolet curable resin material, for example, acrylic resin can be used. Moreover, a polymerization initiator etc. can also be added and used for the said resin. The raw material gas system containing this resin is generated by the gas supply line 100 provided outside the vacuum chamber 10. The gas supply line 100 is connected to the gas supply unit 13 and supplies the raw material gas containing the above-mentioned resin into the vacuum chamber 10.

The gas supply line 100 has a resin material supply line 110, a vaporizer 120 and a pipe 130.

The resin material supply line 110 is composed of a tank 111 filled with a liquid resin material, and a pipe 112 that transports the resin material from the tank 111 to the vaporizer 120. As a method of transferring the resin material from the tank 111 to the vaporizer 120, for example, a method of using a carrier gas composed of an inert gas can be cited. Furthermore, a valve V1, a liquid flow controller not shown, or the like can also be installed in the pipe 112.

One end of the pipe 112 is arranged inside the vaporizer 120. The vaporizer 120 generates a raw material gas by generating mist of the resin material conveyed from the pipe 112. Here, generating mist of the resin material means vaporizing the resin material. The vaporizer 120 is configured to be heated by a heating mechanism (not shown) to maintain the vaporized state of the resin material.

The vaporizer 120 is connected to the pipe 130. The raw material gas system generated by the vaporizer 120 is supplied to the gas supply unit 13 via the pipe 130. At this time, the valve V2 can also be attached to the pipe 130 to regulate the inflow of gas into the gas supply unit 13. Furthermore, by installing a flow controller (not shown), the flow rate of the gas flowing into the gas supply unit 13 can be controlled. In addition, the pipe 130 is also heated to a temperature capable of maintaining the vaporized state of the source gas by a heating mechanism not shown.

(Film forming method)

The film forming method using the film forming apparatus 1 mainly has the following two steps. That is, a step of supplying a raw material gas containing an ultraviolet curable resin from the gas supply part 13 to the substrate W, thereby forming an ultraviolet curable resin layer on the substrate W; and curing the ultraviolet by irradiating ultraviolet UV from the irradiation source 14 The step of hardening the resin layer.

(Steps of forming the UV-curable resin layer)

First, as shown in FIG. 1, the substrate W is arranged on the support surface 151a. Here, the substrate W is supported on the support surface 151a so that the outer peripheral end E of the substrate W protrudes from the side surface 151w. In addition, the ring-shaped anti-blocking frame 18 is arranged around the cooling table 15.

Next, the first region S1 is adjusted to a predetermined vacuum degree by the vacuum exhaust system 19. Here, a mask or the like capable of shielding the non-film-forming portion can be arranged on the substrate W, thereby making it possible to easily pattern the ultraviolet-curable resin layer.

The gas supply line 100 generates a raw material gas from a resin material, and supplies the raw material gas into the vacuum chamber 10 via the gas supply unit 13. The vaporizer 120 vaporizes the resin material to generate a raw material gas containing the ultraviolet curable resin. The generated source gas is supplied to the gas supply unit 13 via the pipe 130, and the source gas is ejected from the gas supply unit 13 toward the substrate W. When the raw material gas reaches the substrate W, the resin in the raw material gas condenses on the substrate W to form an ultraviolet-curing resin layer.

(The curing step of the UV-curable resin layer)

Next, while maintaining the first chamber body 11 at a predetermined degree of vacuum, ultraviolet rays are irradiated onto the substrate W from the irradiation source 14 to harden the ultraviolet curable resin layer. The ultraviolet rays UV irradiated from the irradiation source 14 pass through the transmission portion 161 of the partition wall 16. The ultraviolet rays UV that have passed through the transmission portion 161 are irradiated onto the substrate W through the gap between the branch pipe portions 131. In addition, a part of the ultraviolet rays UV irradiated in the direction of the side wall of the second chamber body 12 is reflected by the reflecting plate 17 and collected on the substrate W arranged on the supporting surface 151a.

Since the gas supply section 13 is composed of a plurality of branch pipe sections 131 arranged at intervals, the ultraviolet rays UV irradiated from the irradiation source 14 can reach the substrate W without being shielded. Thereby, the ultraviolet curable resin layer can be cured efficiently.

(effect)

Fig. 3 is a schematic diagram showing the effect of this embodiment.

As shown in FIG. 3, the ultraviolet curable resin layer 30 formed by ultraviolet UV irradiation is not only deposited on the substrate W, but also deposited on the anti-blocking frame portion 18 arranged on the outer periphery of the substrate W. In particular, as the continuous film formation continues, the accumulation of the ultraviolet curable resin layer 30 becomes remarkable.

In this case, the surrounding of the cooling table 15 is surrounded by the anti-blocking frame portion 18 in which the recessed portion 181h is formed, thereby generating a height shift between the cooling table 15 and the anti-blocking frame portion 18 near the outer periphery of the substrate W, thereby suppressing The ultraviolet curing resin layer 30 is deposited on the side surface 151w (FIG. 3).

If there is no concave portion 181h, the ultraviolet curable resin layer 30 is deposited under the outer peripheral end W of the substrate W due to the deviation of the conveyance of the substrate W (the deviation of the supporting position when the substrate W is placed on the supporting surface 151a). When the ultraviolet curable resin layer 30 is deposited under the outer peripheral end W of the substrate W, the substrate W climbs up to the ultraviolet curable resin layer 30, and a phenomenon in which the substrate W separates from the support surface 151a occurs.

If this phenomenon occurs, the substrate W will be separated from the support surface 151a, and the cooling efficiency of the cooling table 15 will decrease. Therefore, the in-plane temperature distribution of the substrate W becomes non-uniform, and the film thickness distribution of the ultraviolet curable resin layer 30 formed on the substrate W becomes non-uniform.

However, as in the present embodiment, the recessed portion 181h is formed due to the frame portion 18 to prevent the substrate W from being separated from the support surface 151a by climbing onto the ultraviolet curable resin layer 30, and the substrate W contacts the entire surface of the support surface 151a. . Thereby, the in-plane temperature distribution of the substrate W becomes uniform due to the cooling effect of the cooling stage 15. As a result, the ultraviolet curable resin layer 30 is formed on the substrate W with a good film thickness distribution.

However, since the second gap C2 is not closed, the ultraviolet curable resin layer 30 may accumulate in the second gap C2 during long-term driving.

(Modification 1)

The above-mentioned possible phenomenon is solved by Modification 1.

Fig. 4 is a schematic cross-sectional view showing a film forming apparatus according to Modification 1 of the present embodiment. Fig. 4 corresponds to a cross-sectional view taken along the line A-A in Fig. 2 (a).

As shown in FIG. 4, the cooling table 15 is provided with a gas injection mechanism 153 that injects the inert gas G toward the side wall of the vacuum chamber 10 from the second gap C2 through the first gap C1. The inert gas G is, for example, N ₂ , Ar, or the like. The gas injection mechanism 153 is composed of, for example, a gas introduction pipe 153a attached to the cooling table 15, a flow path 153b communicating with the first gap C1, the first gap C1, and the second gap C2. The flow path 153b is provided in the gas introduction pipe 153a and the cooling stage 15. The gas introduction pipe 153a and the flow path 153b are not particularly limited, and for example, a plurality of them may be arranged along the first gap C1. In addition, the total flow rate of the inert gas G introduced into the first flow region S1 is, for example, 0.01 slm or more and 1 slm or less.

When the inert gas G is ejected from the second gap C2 toward the side wall of the vacuum chamber 10 by the gas ejection mechanism 153, the inert gas G is sucked by the exhaust groove 201, and is discharged out of the vacuum chamber 10 by the vacuum exhaust system 19 . That is, a flow of inert gas G from the second gap C2 toward the side wall of the vacuum chamber 10 is formed on the outer periphery of the cooling table 15.

Thereby, the raw material gas system existing in the vicinity of the recess 181h is pushed back by the inert gas G from the cooling table 15 toward the side wall of the vacuum chamber 10. Therefore, the raw material gas is less likely to enter the first gap C1, and the ultraviolet curable resin layer 30 is less likely to be formed in the first gap C1. As a result, it is possible to more reliably prevent the phenomenon that the substrate W climbs onto the ultraviolet curable resin layer 30, and it is difficult for the substrate W to leave the cooling stage 15.

However, in the configuration of Modification 1, although the ultraviolet curable resin layer 30 is prevented from being formed in the first gap C1, a phenomenon in which the ultraviolet curable resin layer 30 is deposited on the side wall 181w occurs in the recess 181h (FIG. 3 ). This is because, under a reduced pressure atmosphere, the farther the inert gas G is away from the first gap C1, the concentration of the inert gas G becomes thinner, and the effect of repelling the raw gas is reduced. If the ultraviolet-curable resin layer 30 deposited on the side wall portion 181w continues to grow, a phenomenon in which the substrate W is lifted by the ultraviolet-curable resin layer 30 may occur. In particular, when continuous film formation is attempted for a long time, the growth of the ultraviolet curable resin layer 30 in the side wall portion 181w becomes remarkable.

(Modification 2)

The phenomenon that may occur in Modification 1 is solved by Modification 2.

Fig. 5(a) and Fig. 5(b) are schematic cross-sectional views of a film forming apparatus according to Modification 2 of this embodiment. (A) in FIG. 5 corresponds to a cross-sectional view taken along the line A-A in (a) in FIG. 2. (B) in FIG. 5 is an enlarged view of (a) in FIG. 5.

As shown in FIG. 5(a), in the anti-blocking frame portion 18, a partition portion 181p facing the side wall portion 181w is attached to the recess 181h. The partition part 181p has a ring shape and surrounds the cooling stage 15. A third gap C3 arranged side by side with the first gap C1 is provided between the partition portion 181p and the side wall portion 181w. The gap width of the third gap C3 is 0.01 mm or more and 0.5 mm or less.

A fourth gap C4 is provided between the partition portion 181p and the substrate W, which communicates with the second gap C2 and the third gap C3. The flow path 153b communicates not only with the first gap C1 but also with the third gap C3. In other words, the downstream of the flow path 153b is branched by the first gap C1 and the third gap C3. Moreover, the width of the fourth gap C4 is wider than the width of the second gap C2. In addition, the fourth gap C4 is also the difference in height between the partition portion 181p and the support surface 151a. The gap width of the fourth gap C4 is 0.01 mm or more and 1 mm or less.

The gas injection mechanism 153 is composed of, for example, a gas introduction pipe 153a; a flow path 153b; a first gap C1; a second gap C2; a third gap C3 communicating with the flow path 153b; and a fourth gap. The gas injection mechanism 153 injects the inert gas G from the second gap C2 and the fourth gap C4 toward the side wall of the vacuum chamber 10 through the first gap C1, and injects the inert gas G toward the side wall from the fourth gap C4 through the third gap C3. .

According to this configuration, the inert gas is introduced not only into the first gap C1 but also into the third gap C3. Thereby, it is difficult for the raw material gas to adhere to the side wall part 181w constituting the recess 181h, and the ultraviolet curable resin layer 30 is not easily formed on the side wall part 181w. Furthermore, since the gap width of the fourth gap C4 is configured to be wider than the gap width of the second gap C2, as shown in FIG. 5(b), even if the ultraviolet curable resin layer 30 is formed on the upper portion of the partition portion 181p, Since the distance of the gap is extended, the ultraviolet curable resin layer 30 cannot easily reach the substrate W. As a result, the substrate W cannot be easily separated from the support surface 151a more reliably.

Moreover, when the tapered portion 181t is provided at the upper corner of the partition portion 181p on the opposite side to the side wall portion 181w, the effect of delaying the time for the ultraviolet curable resin layer 30 to reach the substrate W increases. As a result, the substrate W cannot be easily separated from the support surface 151a more reliably.

(Modification 3)

Fig. 6 is a schematic plan view of a film forming apparatus according to Modification 3 of the present embodiment. FIG. 6 shows the plane of the first region S1 viewed from the vertical direction.

In Modification 3, the gas injection mechanism 153 independently controls: the flow rate of the inert gas G flowing in the third gap C3 facing the corner 151c of the support surface 151a, and the flow rate of the inert gas G flowing on the side of the support surface 151a other than the corner 151c. The flow rate of the inert gas G flowing in the third gap C3 opposite to the portion 151s. In this case, the gas injection mechanism 153 illustrated in FIG. 5 independently controls: the flow rate of the inert gas G flowing in the first gap C1 facing the corner 151c, and the first gap facing the side 151s The flow rate of the inert gas G flowing through C1.

Thereby, in the fourth gap C4, the flow rate of the inert gas G injected from the fourth gap C4 opposite to the corner portion 151c and the flow rate of the inert gas G injected from the fourth gap C4 opposite to the side portion 151s are independently controlled. Flow rate of inert gas G.

Thereby, even if there is a deviation in the concentration of the raw material gas in the periphery of the support surface 151a, the raw material gas is directed from the cooling stage 15 toward the vacuum chamber 10 at the flow rate of the inert gas G corresponding to the concentration of each area in the periphery Push back the side wall. As a result, the following phenomenon is avoided in which the ultraviolet curable resin layer 30 is preferentially deposited in the recess 181h near the corner portion 151c than the recess 181h near the side portion 151s.

(Modification 4)

Fig. 7 is a schematic cross-sectional view of a film forming apparatus according to Modification 4 of the present embodiment.

Multiple branch piping parts can be replaced with shower plates. The gas supply part 13B has a shower plate part 1332 and a space part 1330. The shower plate portion 1332 is configured as a plate-shaped shower plate arranged between the partition wall 16 and the support surface 151a, having a plurality of gas supply holes 1331 penetrating in the thickness direction, and having ultraviolet light permeability as a whole. The space portion 1330 is formed by the gap between the partition wall 16 and the shower plate portion 1332, and is a space partitioned by the partition wall 16 and the first chamber body 11.

As mentioned above, the embodiment of the present invention has been described, but the present invention is not limited to the above-mentioned embodiment, and of course various changes can be added. The respective embodiments are not limited to independent forms, and can be combined as technically as possible.

1: Film forming device 10: Vacuum tank 11: The first chamber body 11c: corner 12: The second chamber body 13, 13B: Gas supply section 14: Irradiation source 15: Cooling table 16: next door 17: reflector 18: Anti-stroke frame 19: Vacuum exhaust system 20: Outer frame member 30: UV curable resin layer 100: Gas supply line 110: Resin material supply line 111: box 112: Piping 120: Vaporizer 130: Piping 131: Branch piping 151: substrate support table 151a: Support surface 151c: corner 151s: edge 151w: side 153: Gas injection mechanism 153a: Gas inlet pipe 153b: Flow path 161: Through Department 181b: bottom face 181e: Peripheral 181h: recess 181p: Partition 181t: tapered part 181w: side wall 201: Exhaust slot 1330: Ministry of Space 1331: Gas supply hole 1332: shower plate C1: first gap C2: Second clearance C3: third gap C4: The fourth gap E: peripheral end G: inert gas S1: The first area S2: second area UV: Ultraviolet V1, V2: Valve W: substrate

Fig. 1 is a schematic cross-sectional view of the film forming apparatus of the present embodiment. In [FIG. 2], (a) is a schematic plan view of the first region S1 of FIG. 1 viewed from a vertical direction, and (b) is a schematic cross-sectional view taken along the line A-A of (a). Fig. 3 is a schematic diagram showing the effect of this embodiment. Fig. 4 is a schematic cross-sectional view of a film forming apparatus according to Modification 1 of the present embodiment. Fig. 5 is a schematic cross-sectional view of a film forming apparatus according to Modification 2 of this embodiment. [Fig. 6] Fig. 6 is a schematic plan view of a film forming apparatus according to Modification 3 of this embodiment. Fig. 7 is a schematic cross-sectional view of a film forming apparatus according to Modification 4 of this embodiment.

1: Film forming device

10: Vacuum tank

11: The first chamber body

12: The second chamber body

13: Gas supply department

14: Irradiation source

15: Cooling table

16: next door

17: reflector

18: Anti-stroke frame

19: Vacuum exhaust system

20: Outer frame member

100: Gas supply line

110: Resin material supply line

111: box

112: Piping

120: Vaporizer

130: Piping

131: Branch piping

151: substrate support table

151a: Support surface

151w: side

161: Through Department

201: Exhaust slot

S1: First zone

S2: second area

UV: Ultraviolet

V1, V2: Valve

W: substrate

Claims (7)

A film forming device including: The cooling table has a supporting surface for supporting the substrate and a side surface connected to the supporting surface, and is configured such that the outer peripheral end of the substrate supported by the supporting surface protrudes from the side surface; The ring-shaped anti-blocking frame is arranged to surround the side surface of the cooling table, a recess is provided at a position opposite to the outer peripheral end of the substrate, and the side surface is surrounded by the recess; The gas supply part supplies the raw material gas containing the energy ray hardening resin toward the support surface; An irradiation source, facing the support surface, irradiates the support surface with energy rays that harden the energy ray hardening resin; and The vacuum tank accommodates the cooling table, the anti-blocking frame, the gas supply part, and the irradiation source. The film forming apparatus as recited in claim 1, wherein a first gap is provided between the side surface portion of the cooling table and the blocking frame portion; A second gap is provided between the anti-sticking frame portion and the substrate; The cooling stage is provided with a gas injection mechanism which injects an inert gas from the second gap to the side wall of the vacuum tank through the first gap. The film forming apparatus described in claim 2, wherein the concave portion provided in the anti-sticking frame portion is composed of the following members: Bottom face The side wall is connected to the bottom surface and is opposite to the side surface of the cooling platform; and The outer peripheral portion is connected to the aforementioned bottom portion and surrounds the aforementioned bottom portion and the aforementioned side wall portion; The aforementioned recessed portion is attached with a partition portion facing the aforementioned side wall portion and surrounding the aforementioned cooling platform; A third gap arranged side by side with the first gap is provided between the partition portion and the side wall portion; A fourth gap is provided between the aforementioned partition and the aforementioned substrate; The gas ejection mechanism ejects the inert gas from the second gap and the fourth gap to the side wall of the vacuum chamber through the first gap, and ejects the inert gas from the fourth gap to the side wall through the third gap. gas. The film forming apparatus according to claim 2 or 3, wherein the width of the fourth gap is wider than the width of the second gap. The film forming device as described in claim 2 or 3, wherein the supporting surface of the cooling table is rectangular; The gas injection mechanism independently controls the flow rate of the inert gas flowing in the third gap facing the corner portion of the support surface, and the first step facing the edge portion of the support surface other than the corner portion. The flow rate of the aforementioned inert gas flowing in three gaps. The film forming apparatus described in claim 4, wherein the supporting surface of the cooling table is rectangular; The gas injection mechanism independently controls the flow rate of the inert gas flowing in the third gap facing the corner portion of the support surface, and the first step facing the edge portion of the support surface other than the corner portion. The flow rate of the aforementioned inert gas flowing in three gaps. A film forming method has the following steps: On the supporting surface of the cooling table having a supporting surface for supporting the substrate and a side surface connected to the supporting surface, the substrate is supported in such a manner that the outer peripheral end of the substrate protrudes from the side surface; The ring-shaped anti-blocking frame portion surrounding the side surface of the cooling stage is provided with a recessed portion at a position opposite to the outer peripheral end of the substrate, and the anti-blocking frame portion that surrounds the side surface portion by the recessed portion Arranged around the aforementioned cooling table; Supply raw material gas containing energy ray hardening resin to the aforementioned substrate; The substrate is irradiated with energy rays that harden the energy ray hardening resin, thereby forming a resin layer on the substrate.

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