JP2020147787A - Film deposition device - Google Patents

Abstract

To provide a film deposition device capable of improving film deposition quality and productivity.SOLUTION: A film deposition device according to the present invention comprises a chamber, a cooling stage, a light source unit, a gas supply part, and a partition wall. The chamber has a bottom part, a side wall, and a film deposition chamber surrounded by the bottom part and the side wall. The cooling stage has a support face supporting a substrate, and a rear face opposed to the bottom part, and is arranged in the film deposition chamber. The light source unit has a radiation source for radiating energy ray, and is opposed to the support face. The gas supply part supplies raw material gas containing energy ray hardening resin hardened with radiation of the energy ray, toward the support face. The partition wall separates a stage rear side region of the film deposition chamber provided to the chamber which the rear face faces, from an exhaust region of the film deposition chamber positioned at an outer peripheral part of the stage rear side region and connected to an exhaust system.SELECTED DRAWING: Figure 1

Description

The present invention relates to a film forming apparatus for forming a resin layer made of an energy ray-curable resin.

When an energy ray-curable resin such as an ultraviolet curable resin is cured to form a resin layer on a substrate, the following two steps are typically performed. That is, the process of supporting the substrate by the cooling stage and supplying the raw material gas containing the resin onto the substrate supported by the cooling stage, and the process of irradiating the substrate with light such as ultraviolet rays to form a cured resin layer on the substrate. It is a process of forming.

In particular, recently, instead of performing such a plurality of steps in separate vacuum chambers, a step of supplying a raw material gas on a substrate and a step of forming a resin layer cured on the substrate by ultraviolet rays or the like are performed. A film forming apparatus is provided in one vacuum chamber. For example, Patent Document 1 describes a film forming apparatus having a gas supply unit including a pipe for discharging a raw material gas.

Japanese Unexamined Patent Publication No. 2013-064187

However, in the film forming apparatus described in Patent Document 1, a resin layer may be deposited on the back surface of the cooling stage. Since this resin layer is cured and then peeled off to become particles, it takes time and effort to frequently perform maintenance in the film forming apparatus, which causes a decrease in productivity. Further, when the particles are mixed in the resin layer during film formation, the film formation quality may be deteriorated.

In view of the above circumstances, an object of the present invention is to provide a film forming apparatus capable of improving film forming quality and productivity.

In order to achieve the above object, the film forming apparatus according to one embodiment of the present invention includes a chamber, a cooling stage, a light source unit, a gas supply unit, and a partition wall.
The chamber has a bottom, a side wall, and a film formation chamber surrounded by the bottom and the side wall.
The cooling stage has a support surface that supports the substrate and a back surface that faces the bottom portion, and is arranged in the film formation chamber.
The light source unit has an irradiation source for irradiating energy rays, and is arranged so as to face the support surface.
The gas supply unit supplies a raw material gas containing an energy ray-curable resin that is cured by being irradiated with the energy rays toward the support surface.
The partition wall is provided in the chamber, and the exhaust of the film forming chamber which is located on the outer peripheral portion of the stage back side region of the film forming chamber facing the back surface of the cooling stage and the exhaust system connected to the outer peripheral portion of the stage back side region. Partition the area.

In this configuration, since the exhaust region and the stage backside region are partitioned by the partition wall, it is possible to prevent the raw material gas supplied to the film forming chamber from flowing into the stage backside region along with the exhaust. This makes it possible to prevent the energy ray-curable resin layer from accumulating on the back surface of the cooling stage. Therefore, the frequency of maintenance can be reduced and the productivity can be increased. Further, it is possible to prevent the deposits on the back surface of the cooling stage from adhering to the film during film formation and improve the film formation quality.

The partition wall may be provided at the bottom portion and may be configured to surround the periphery of the support surface.
As a result, the entire cooling stage can be surrounded by the partition wall, and the inflow of the raw material gas from the film forming region facing the support surface to the back side region of the stage can be prevented more effectively. Therefore, it is possible to effectively prevent the resin layer from accumulating on the back surface of the cooling stage.

For example, the partition wall may be configured integrally with the chamber.
As a result, sufficient joint strength between the partition wall and the chamber can be ensured.

Further, the film forming apparatus may further include a plurality of flow paths connected to the exhaust system and open to the exhaust region.
As a result, the raw material gas can be efficiently exhausted from a plurality of locations.

For example, the side wall is formed in an annular shape having a plurality of corners.
The plurality of flow paths may be opened between the plurality of corners and the partition wall.
As a result, it is possible to prevent the raw material gas from staying near the corners, and the raw material gas can be exhausted more reliably.

The film forming apparatus has a plurality of substrate elevating pins, and further includes a substrate elevating mechanism arranged in the back side region of the stage.
The cooling stage may further have a plurality of through holes through which the plurality of substrate elevating pins are inserted.
In this configuration, since the substrate elevating mechanism is arranged in the stage backside region separated from the film forming region and the exhaust region, it is possible to prevent the energy ray-curable resin layer from being deposited on the substrate elevating mechanism. Therefore, the frequency of maintenance can be suppressed and the productivity can be improved, and the deposits adhering to the substrate elevating mechanism can be prevented from adhering to the film during film formation, and the film formation quality can be improved.

In this case, the film forming apparatus may further include an inert gas introducing portion for introducing the inert gas into the region behind the stage.

As a result, the pressure in the region behind the stage can be maintained higher than that in the film formation region. Therefore, it is possible to prevent the raw material gas from flowing into the back side region of the stage from the film forming region through the through hole, and it is possible to more reliably prevent the resin layer from accumulating on the back surface of the cooling stage.

As described above, according to the present invention, the film formation quality and productivity can be improved.

It is a schematic sectional drawing which shows the film forming apparatus which concerns on 1st Embodiment of this invention. It is a schematic cross-sectional view which shows the cross section cut by the line II-II of FIG. It is schematic cross-sectional view which shows the main part of the film forming apparatus which concerns on the comparative example of the said embodiment. It is schematic cross-sectional view which shows the film forming apparatus which concerns on 2nd Embodiment of this invention. It is schematic cross-sectional view which shows the main part of the film forming apparatus which concerns on other embodiment of this invention. It is a schematic cross-sectional view which shows the main part of the film forming apparatus which concerns on still another Embodiment of this invention, and is the figure which shows the same cross section as FIG. It is schematic cross-sectional view which shows the main part of the film forming apparatus which concerns on still another Embodiment of this invention.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

<First Embodiment>
FIG. 1 is a schematic cross-sectional view showing a film forming apparatus 100 according to the first embodiment of the present invention. In the figure, the X-axis direction and the Y-axis direction indicate horizontal directions orthogonal to each other, and the Z-axis direction indicates a direction orthogonal to the X-axis direction and the Y-axis direction.

The film forming apparatus 100 is a film forming apparatus for forming an ultraviolet curable resin layer which is an energy ray curable resin on the substrate W. The film forming apparatus 100 includes a chamber 10, a cooling stage 15, a light source unit 20, a gas supply unit 30, a partition wall 40, and a substrate elevating mechanism 50.

(Chamber)
The chamber 10 has a bottom portion 11, a side wall 12, and a film forming chamber 13 surrounded by the bottom portion 11 and the side wall 12. The chamber 10 is a metal vacuum vessel having an opening formed at the top. The film forming chamber 13 is configured to be able to exhaust or maintain a predetermined decompressed atmosphere via the exhaust system 19 connected to the chamber 10.

The chamber 10 further has a top plate 14 that airtightly closes the opening. For example, the top plate 14 has a window portion 141 that transmits ultraviolet rays and UV rays, and a frame portion 142 that supports the window portion 141. The window portion 141 is made of an ultraviolet transmissive material such as quartz glass. The number of windows 141 is not particularly limited, and may be singular or two or more.

(Cooling stage)
The cooling stage 15 is arranged in the film forming chamber 13. The cooling stage 15 has a support surface 151 for supporting the substrate W, a back surface 152 facing the bottom portion 11, and a side surface 153 to which the support surface 151 and the back surface 152 are connected.

The cooling stage 15 has a cooling mechanism (not shown) and is cooled to a predetermined temperature or lower. By the cooling mechanism, the substrate W is cooled to an appropriate temperature sufficient for condensing the ultraviolet curable resin in the raw material gas described later.

The substrate W is a glass substrate, but may be a semiconductor substrate. The shape and size of the substrate W are not particularly limited, and may be rectangular or circular. An element may be formed in advance on the film-forming surface of the substrate W. In this case, the resin layer formed on the substrate W functions as a protective film for the element.

The cooling stage 15 further has a plurality of through holes 154 through which the substrate elevating pin 51 of the substrate elevating mechanism 50 described later is inserted. Each through hole 154 is configured to penetrate the support surface 151 and the back surface 152, and is arranged at a position where the substrate elevating pin 51 can be inserted.

(Light source unit)
The light source unit 20 has a cover 21 and an irradiation source 22. The cover 21 is arranged on the top plate 14, for example, and has a light source chamber 23 that houses the irradiation source 22. The light source chamber 23 is, for example, an atmospheric atmosphere. The irradiation source 22 is a light source that irradiates ultraviolet UV as energy rays toward the cooling stage 15 through the window portion 141 of the top plate 14, and is typically composed of an ultraviolet lamp. Not limited to this, the irradiation source 22 may employ a light source module in which a plurality of LEDs (Light Emitting Diodes) that emit ultraviolet UV rays are arranged in a matrix.

(Gas supply unit)
The gas supply unit 30 has a shower plate 31 and a gas diffusion chamber 32, and supplies a raw material gas containing a resin (ultraviolet curable resin) that is cured by irradiation with ultraviolet UV rays toward the support surface 151.

As the ultraviolet curable resin material, for example, an acrylic resin can be used. Further, it is also possible to add a polymerization initiator or the like to the above resin and use it. The raw material gas containing such a resin is generated by a raw material gas generator (not shown) installed outside the chamber 10. The raw material gas generated by the raw material gas generator is introduced into the gas diffusion chamber 32 of the gas supply unit 30 via the pipe 130.

The raw material gas introduced into the gas diffusion chamber 32 is supplied to the film forming region S1 through the gas supply hole 311 of the shower plate 31. The film forming region S1 is a region facing the support surface 151 in the film forming chamber 13, and is a region between the support surface 151 and the gas supply unit 30. The raw material gas supplied to the film forming region S1 is further exhausted through the exhaust region S3 partitioned by the partition wall 40.

(Septum)
The partition wall 40 is provided in the chamber 10 and partitions the stage back side region S2 of the film forming chamber 13 facing the back surface 152 of the cooling stage 15 and the exhaust region S3 of the film forming chamber 13 to which the exhaust system 19 is connected. ..

The partition wall 40 is provided on, for example, the bottom portion 11 and is configured to extend from the bottom portion 11 to at least the cooling stage 15. In the present embodiment, the partition wall 40 is provided so as to be in contact with the side surface 153 of the cooling stage 15. The partition wall 40 is integrally configured with the chamber 10 in this embodiment.

The partition wall 40 may directly support the cooling stage 15 as shown in FIG. 1, but is not limited to this, and the cooling stage 15 may be supported by another member as described later.

FIG. 2 is a schematic cross-sectional view taken along the line II-II of FIG. In FIG. 2, the upper surface of the partition wall 40 is shown by hatching for explanation.
The partition wall 40 is configured to surround the support surface 151 of the cooling stage 15. That is, the partition wall 40 is formed in an annular shape along the peripheral edge of the cooling stage 15 when viewed from the Z-axis direction.

The exhaust region S3 is a groove-shaped region formed on the peripheral edge of the film forming chamber 13 sandwiched between the partition wall 40 and the side wall 12 of the chamber 10. In the present embodiment, the side wall 12 is formed in a rectangular ring having four corners 12a. The exhaust region S3 is also formed in an annular shape along the side wall 12 when viewed from the Z-axis direction, for example, as shown in FIG.

By providing the partition wall 40 so as to surround the cooling stage 15, the back side region S2 of the stage becomes a substantially closed space. An exhaust system (not shown) may be connected to the stage backside region S2 from the viewpoint of adjusting the pressure in the stage backside region S2.

The exhaust system 19 is connected to the exhaust region S3. As shown in FIG. 1, for example, the exhaust system 19 is arranged between the exhaust pipe 191 connected to the exhaust region S3, the vacuum pump 192 connected to the exhaust pipe 191 and the exhaust pipe 191 and the vacuum pump 192. It has a valve V and. For example, the exhaust pipe 191 is branched into a plurality of pipes upstream of the valve V, and is connected to each of a plurality of locations (4 locations in the example of FIG. 2) of the chamber 10. The configuration of the exhaust system 19 is not limited to the illustrated example, and for example, a flow rate controller may be connected. In FIG. 1, for the sake of explanation, both the opening of the exhaust pipe 191 and the through hole 154 of the cooling stage 15 are shown on the same cross section.

The film forming apparatus 100 includes a plurality of flow paths Q that are connected to the exhaust system 19 and open in the exhaust region S3. The flow path Q is connected to the exhaust pipe 191 and opens to the exhaust region S3 through the chamber 10. In the present embodiment, for example, four flow paths Q are arranged and open at the bottom of the exhaust region S3, and more specifically, open between the corner portion 12a of the side wall 12 and the partition wall 40.

As shown in FIG. 1, the heater H may be arranged in the exhaust region S3. The heater H has, for example, an exhaust groove H1 that serves as a flow path for the raw material gas, and is configured to be able to heat the exhaust groove H1. As a result, the raw material gas flowing into the exhaust region S3 is heated to the vaporization temperature or higher, and the resin material contained in the raw material gas can be prevented from accumulating as a resin layer on the inner surface of the exhaust region S3. The configuration of the heater H is not limited to the example of FIG. 1, and may be arranged on the entire inner surface of the exhaust region S3, for example. In FIG. 2, the heater H is not shown.

(Board lifting mechanism)
The substrate elevating mechanism 50 is arranged in the stage backside region S2, and is configured to be able to elevate the substrate W with respect to the support surface 151. The board elevating mechanism 50 includes a board elevating pin 51 and a drive unit 52 that drives the board elevating pin 51 in the Z-axis direction (vertical direction). The drive unit 52 moves the substrate elevating pin 51 between a substrate support position where the end portion 51a protrudes from the support surface 151 and a shunting position where the end portion 51a does not protrude from the support surface 151.

The film forming apparatus 100 further includes a control unit 60. The control unit 60 is typically composed of a computer and controls each part of the film forming apparatus 100.

Subsequently, a film forming method using the film forming apparatus 100 of the present embodiment configured as described above will be described.

(Film formation process)
The film forming step includes a carry-in step of the substrate W, a supply step of a raw material gas containing an ultraviolet curable resin, an exhaust step of the raw material gas, a curing step of the ultraviolet resin layer, and a carry-out step of the substrate W.

First, in the process of carrying in the substrate W, the substrate W is carried into the film forming chamber 13. The substrate W is carried into the film forming chamber 13 through an opening (not shown) of the side wall 12 by the substrate transport device. The board elevating pin 51 rises to the board support position. The substrate W is transferred from the substrate transfer device onto the end portion 51a.

Subsequently, the substrate elevating pin 51 is moved downward in the Z-axis direction to the shunting position by the drive unit 52. As a result, the substrate W is arranged on the support surface 151. After the substrate W is carried in, the film forming chamber 13 is adjusted to a predetermined degree of vacuum by the exhaust system 19 or the like.

In the raw material gas supply step, the raw material gas containing the ultraviolet curable resin is introduced into the gas supply unit 30 and discharged to the film forming region S1 of the film forming chamber 13 through the plurality of gas supply holes 311 of the shower plate 31.

As a result, the raw material gas is supplied to the entire surface of the substrate W on the cooling stage 15. The ultraviolet curable resin in the raw material gas is condensed and deposited on the surface of the substrate W. During the raw material gas supply process, a part of the raw material gas is exhausted by the exhaust system 19 for pressure adjustment.

After the supply of the raw material gas is stopped, the raw material gas in the film forming chamber 13 is exhausted to the outside of the film forming chamber 13 by the exhaust system 19. The raw material gas is introduced from the film forming region S1 into the exhaust region S3 via the exhaust groove H1 and is sucked into the flow path Q and the exhaust pipe 191.

Subsequently, in the curing step of the ultraviolet curable resin, ultraviolet UV is irradiated from the irradiation source 22 of the light source unit 20 toward the cooling stage 15 of the cooling stage 15. As a result, a cured product layer of the ultraviolet curable resin is formed on the substrate W.

After the curing step is completed, the substrate W is carried out from the film forming chamber 13. At this time, the board elevating pin 51 moves from the retreat position to the board support position. Along with this, the substrate W is separated from the support surface 151 upward in the Z-axis direction. Then, the substrate W is transferred to a substrate transport device that has entered through an opening (not shown) of the side wall 12, and the substrate W is carried out from the film forming chamber 13 by the device.

After that, another substrate W before film formation is carried into the film formation chamber 13 by the substrate transfer device, and the same process is repeated. As a result, it is possible to form an ultraviolet curable resin layer having a predetermined thickness on the substrate W with one film forming apparatus.

[Action and effect of this embodiment]
Hereinafter, the action and effect of this embodiment will be described with reference to comparative examples.
FIG. 3 is a schematic cross-sectional view showing a main part of the film forming apparatus 100 ′ according to the comparative example of the present embodiment. The film forming apparatus 100'does not have a partition wall 40, and the exhaust region S3 and the stage backside region S2 are not partitioned.

Therefore, in the exhaust process, the raw material gas supply process, and the like, the raw material gas passes through the region on the back side of the cooling stage 15 and is exhausted as shown by the solid arrow. Since the entire cooling stage 15 including the back surface 152 is cooled, the ultraviolet curable resin is condensed and deposited on the back surface 152 as well. Therefore, in the curing step, the ultraviolet UV reflected by the bottom portion 11 and the like reaches the back surface 152, and the resin layer P is formed on the back surface 152.

Such a resin layer P is peeled off and becomes a particle source. The particles may adhere to the substrate W at the time of the next film formation of the substrate W carried in, which causes the film formation quality to deteriorate. Further, in order to remove the resin layer P formed on the back surface 152, it is necessary to frequently perform maintenance of the film forming chamber 13. Therefore, the time during which the film forming apparatus 100 can be continuously operated is shortened, which may reduce the productivity.

Therefore, in the present embodiment, the film forming apparatus 100 has a partition wall 40. As a result, the exhaust region S3 to which the exhaust system 19 is connected and the stage backside region S2 facing the backside 152 of the cooling stage 15 are partitioned by the partition wall 40. Therefore, in the exhaust process, the raw material gas supply process, and the like, most of the raw material gas is exhausted without passing through the stage backside region S2.

As a result, the deposition of the resin layer on the back surface 152 can be suppressed, and the generation of particles can be prevented. Therefore, it is possible to prevent a decrease in film formation quality due to particles and a decrease in productivity due to frequent maintenance.

Further, in the present embodiment, the partition wall 40 is arranged so as to surround the support surface 151. As a result, the stage backside region S2 can be made into a space substantially closed by the partition wall 40 and the cooling stage 15, and the inflow of the raw material gas from the film formation region S1 to the stage backside region S2 can be prevented.

Further, in the present embodiment, the flow path Q connected to the exhaust system 19 opens at a position corresponding to the corner portion 12a of the side wall 12. As a result, it is possible to prevent the raw material gas from staying in the vicinity of the corner portion 12a, and the raw material gas can be efficiently exhausted.

Further, with the above configuration, it is possible to prevent the resin layer from being deposited on the substrate elevating mechanism 50 arranged in the stage backside region S2. As a result, the frequency of maintenance for the substrate elevating mechanism 50 can be reduced, and the productivity can be further increased.

<Second Embodiment>
Further, from the viewpoint of more reliably preventing the inflow of the raw material gas into the backside region S2 of the stage, the film forming apparatus can adopt the following configuration.
In the following embodiments, the same components as those in the above-described embodiments are designated by the same reference numerals, and the description thereof will be omitted.

FIG. 4 is a schematic cross-sectional view showing the film forming apparatus 200 according to the second embodiment of the present invention. In FIG. 4, a part of the control unit 60 and the exhaust system 19 is not shown.

In addition to the chamber 10, the cooling stage 15, the light source unit 20, the gas supply unit 30, the partition wall 40, and the substrate elevating mechanism 50, the film forming apparatus 200 is further non-existent as in the first embodiment. It includes an active gas introduction unit 70.

The inert gas introduction unit 70 discharges the inert gas into the backside region S2 of the stage. The inert gas introduction unit 70 includes, for example, a gas introduction pipe 71 connected to the stage backside region S2, a flow path 72 connected to the gas introduction pipe 71 and formed in the chamber 10, and an inert gas source (not shown). Has. The inert gas G is, for example, N ₂ , Ar, or the like.

The flow path 72 is open to the inner surface of the stage back side region S2, for example, to the bottom 11 of the chamber 10. Alternatively, the flow path 72 may be open to the partition wall 40. Further, the opening of the flow path 72 may be singular or plural.

The inert gas introduction unit 70, for example, always introduces the inert gas into the backside region S2 of the stage during the film forming process. As a result, the pressure in the stage backside region S2 is higher than the pressure in the film formation region S1. Therefore, it is possible to prevent the exhausted raw material gas from flowing into the stage backside region S2 through the slight gap between the through hole 154 of the cooling stage 15 and the substrate elevating pin 51. As a result, it is possible to more reliably prevent the resin layer from accumulating on the back surface 152 of the cooling stage 15.

[Other Embodiments]
For example, as shown in the cross-sectional view of the main part of FIG. 5, the film forming apparatus 100 may further have a heat insulating member 80 arranged between the partition wall 40 and the cooling stage 15. The heat insulating member 80 is formed of a heat insulating material, is in contact with, for example, the back surface 152 and the side surface 153 of the cooling stage 15, and is arranged on the partition wall 40. As a result, it is possible to effectively insulate between the stage back side region S2 and the exhaust region S3 in which the cooling stage 15 is arranged. Therefore, it is possible to prevent the inside of the exhaust region S3 from being cooled by the cooling stage 15, and it is possible to more reliably prevent the deposition of the resin layer in the exhaust region S3.

Further, as shown in FIG. 6, the partition wall 40 is not limited to the configuration that surrounds the support surface 151 of the cooling stage 15, and may be arranged so as to surround the opening of the exhaust pipe 191 for example. In this case, the stage backside region S2 is a region below the backside 152 of the cooling stage 15 in the Z-axis direction, and can be defined as a region outside the exhaust region S3. Even in this configuration, the flow path of the raw material gas is defined by the partition wall 40, the raw material gas is less likely to flow into the back surface region S2 of the stage, and the deposition of the resin layer on the back surface 152 of the cooling stage 15 can be suppressed.

Further, the partition wall 40 is not limited to each of the above configurations as long as the exhaust region S3 on the periphery of the chamber 10 can be defined. Further, the exhaust system 19 is not limited to the configuration connected to the base 41 of the partition wall 40 or the bottom portion 11 of the chamber 10, and may be connected to the side wall 12 of the chamber 10.

The configuration of the gas supply unit 30 is not limited to the configuration having the shower plate 31. For example, as shown in the schematic cross-sectional view of FIG. 7, the gas supply unit 30 may have a gas supply pipe 33 instead of the shower plate 31 and the gas diffusion chamber 32. The gas supply pipe 33 has a plurality of gas discharge holes (not shown), and is configured so that the raw material gas supplied from the raw material gas generator is discharged from the gas discharge holes. Even with such a configuration, the ultraviolet rays emitted from the light source unit 20 can reach the substrate W through the adjacent gas supply pipes 33, and the raw material gas supply process and the curing process can be performed in one chamber 10. It can be carried out.

Further, the partition wall 40 may be configured separately from the chamber 10.

Although each embodiment of the present invention has been described above, the present invention is not limited to the above-described embodiment, and it goes without saying that various modifications can be made without departing from the gist of the present invention. For example, the embodiment of the present invention can be an embodiment in which each embodiment is combined.

In the above embodiments, the example in which the energy rays are ultraviolet rays is shown, but the present invention is not limited to this. For example, it is also possible to use electromagnetic waves generated from a high frequency power source of about 13 MHz or 27 MHz. In this case, the irradiation source can be an oscillator or the like. It is also possible to use the energy ray as an electron beam and the irradiation source as an electron beam source.

Further, the film forming apparatus according to the above embodiment can be used, for example, as a part of an in-line type or cluster type film forming apparatus having a plurality of chambers. By using such a device, it becomes easier to manufacture an element or the like having a plurality of layers such as a light emitting element. In addition, such an apparatus can realize cost reduction, space saving, and further improvement in productivity.

10 ... Chamber 11 ... Bottom 12 ... Side wall 12a ... Corner 13 ... Film formation chamber 15 ... Cooling stage 19 ... Exhaust system 20 ... Light source unit 22 ... Irradiation source 30 ... Gas supply unit 40 ... Partition 50 ... Board elevating mechanism 51 ... Substrate Lifting pin 151 ... Support surface 152 ... Back surface 154 ... Through hole S1 ... Film formation area S2 ... Stage back side area S3 ... Exhaust area Q ... Flow path

Claims (7)

A chamber having a bottom, a side wall, and a film formation chamber surrounded by the bottom and the side wall.
A cooling stage having a support surface for supporting the substrate and a back surface facing the bottom portion and arranged in the film forming chamber.
A light source unit having an irradiation source for irradiating energy rays and arranged to face the support surface,
A gas supply unit that supplies a raw material gas containing an energy ray-curable resin that is cured by being irradiated with the energy rays toward the support surface.
A partition wall provided in the chamber and partitioning a stage backside region of the film forming chamber facing the back surface and an exhaust region of the film forming chamber located on the outer peripheral portion of the stage backside region and to which an exhaust system is connected. A film forming apparatus provided with and. The film forming apparatus according to claim 1.
The partition wall is a film forming apparatus provided on the bottom portion and is configured to surround the periphery of the support surface. The film forming apparatus according to claim 1 or 2.
The partition wall is a film forming apparatus integrally formed with the chamber. The film forming apparatus according to any one of claims 1 to 3.
A film forming apparatus further provided with a plurality of flow paths connected to the exhaust system and opened in the exhaust region. The film forming apparatus according to claim 4.
The side wall is formed in an annular shape having a plurality of corners.
A film forming apparatus in which the plurality of flow paths are opened between the plurality of corner portions and the partition wall. The film forming apparatus according to any one of claims 1 to 5.
It has a plurality of board lifting pins, and further includes a board lifting mechanism arranged in the back side region of the stage.
The cooling stage is a film forming apparatus further having a plurality of through holes through which the plurality of substrate elevating pins are inserted. The film forming apparatus according to claim 6.
A film forming apparatus further comprising an inert gas introduction portion for introducing the inert gas into the backside region of the stage.

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