CN111492314A - Light irradiation device - Google Patents
Light irradiation device Download PDFInfo
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- CN111492314A CN111492314A CN201880081427.5A CN201880081427A CN111492314A CN 111492314 A CN111492314 A CN 111492314A CN 201880081427 A CN201880081427 A CN 201880081427A CN 111492314 A CN111492314 A CN 111492314A
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- light
- vacuum ultraviolet
- light irradiation
- irradiation
- substrate
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- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 claims abstract description 100
- 229910052805 deuterium Inorganic materials 0.000 claims abstract description 100
- 239000000758 substrate Substances 0.000 claims description 80
- 230000000903 blocking effect Effects 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 16
- 230000001678 irradiating effect Effects 0.000 claims description 8
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
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- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
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Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70016—Production of exposure light, i.e. light sources by discharge lamps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J61/00—Gas-discharge or vapour-discharge lamps
- H01J61/68—Lamps in which the main discharge is between parts of a current-carrying guide, e.g. halo lamp
Abstract
The present invention provides a light irradiation device, comprising: a plurality of deuterium lamps that irradiate vacuum ultraviolet light having a wavelength of 200nm or less and a conical optical path having a light source as a vertex, onto the wafer W; and a polygonal tube provided corresponding to each deuterium lamp so as to block an overlapping portion of irradiation ranges of vacuum ultraviolet light irradiated from the deuterium lamps, the polygonal tube being formed in a polygonal shape when viewed from a traveling direction of the vacuum ultraviolet light.
Description
Technical Field
The present invention relates to a light irradiation apparatus for irradiating a substrate with light.
Background
Patent document 1 describes that in a manufacturing process of a semiconductor device, the following steps are sequentially performed: forming a resist film on a surface of a substrate; a step of performing exposure; patterning the resist; irradiating the front surface of the resist with light having a wavelength of 200nm or less; and etching the lower layer film of the resist film. The step of irradiating light having a wavelength of 200nm or less (hereinafter, simply referred to as the step of irradiating light) is performed, for example, for the purpose of improving roughness (unevenness) of the resist film.
Documents of the prior art
Patent document
Patent document 1: japanese patent No. 3342856
Disclosure of Invention
Technical problem to be solved by the invention
In the case of performing the above-described light irradiation step on a substrate having a diameter of about 300mm, a plurality of lamps are disposed on the substrate from the viewpoint of shortening the irradiation distance and securing the irradiation intensity. Thus, each lamp is a point light source, and the irradiation range in the wafer is formed in a circular shape. When the irradiation range is circular, if the lamps are arranged so that their irradiation ranges do not overlap, there may be a portion where the light is not irradiated (or the irradiation intensity becomes weak). On the other hand, in order to prevent the portion where the irradiation intensity is weakened, it is necessary to overlap a part of the irradiation range of each lamp, and in this case, the irradiation intensity at the overlapped portion becomes very strong, which is problematic. As described above, in the structure in which the substrate is irradiated with light by a plurality of lamps, it is difficult to uniformly irradiate the irradiation surface of the substrate with light.
Accordingly, the present invention describes a light irradiation apparatus capable of improving uniformity of light irradiation distribution in an irradiation surface of a substrate.
Technical solution for solving technical problem
A light irradiation device according to an aspect of the present invention includes: a plurality of light irradiation units for irradiating the substrate with vacuum ultraviolet light having a conical light path with a light source as a vertex; and a light shielding portion provided corresponding to each of the light irradiation portions so as to shield an overlapping portion of irradiation ranges of the vacuum ultraviolet light irradiated from the plurality of light irradiation portions, the light shielding portion being formed in a polygonal shape when viewed from a traveling direction of the vacuum ultraviolet light.
In the light irradiation device of the present invention, the overlapping portion of the plurality of vacuum ultraviolet light beams having the conical light path and irradiated onto the substrate is shielded by the polygonal light shielding portions provided corresponding to the respective light irradiation portions. Here, when the substrate is irradiated with light from a plurality of point light sources whose irradiation ranges are circular in the substrate, if the point light sources are arranged so that the irradiation ranges of the respective lights do not overlap, the irradiation ranges are circular, and thus there may be portions where the light cannot be irradiated (or portions where the irradiation intensity is weak). On the other hand, in order to prevent the occurrence of a portion which cannot be irradiated with light (or a portion whose irradiation intensity is weakened), it is necessary to overlap a part of the irradiation range of light irradiated from each point light source. As described above, in the conventional configuration in which light is irradiated from a plurality of light sources onto a substrate, it has been difficult to uniformly irradiate the irradiation surface of the substrate with light. In this regard, in the light irradiation device of the present invention, the light shielding portion that shields the overlapping portion of the plurality of vacuum ultraviolet lights is formed in a polygonal shape when viewed from the traveling direction of the vacuum ultraviolet lights. Thereby, each irradiation range of the vacuum ultraviolet light in the substrate becomes a polygon. Thus, unlike the case where the irradiation range is circular, the irradiation range is not overlapped, and generation of a portion which cannot be irradiated with light (or a portion whose irradiation intensity is weakened) can be suppressed. That is, according to the light irradiation device of the present invention, uniformity of light irradiation distribution in the irradiation surface of the substrate can be improved.
The light blocking portion may have a cylindrical light blocking member formed to extend in the traveling direction of the vacuum ultraviolet light and to be cylindrical. Since the light shielding portion provided in correspondence with the light irradiation portion is formed in a cylindrical shape extending in the height direction (the traveling direction of the vacuum ultraviolet light), the influence of the vacuum ultraviolet light from the light irradiation portions other than the light irradiation portion corresponding to the light shielding portion (for example, adjacent light irradiation portions) can be appropriately eliminated. That is, the irradiation range can be appropriately prevented from overlapping with the vacuum ultraviolet light of the other light irradiation section, and the uniformity of the light irradiation distribution on the irradiation surface of the substrate can be further improved.
The substrate may further include a spacing distance adjusting portion for adjusting a spacing distance between the light shielding portion and the substrate. By providing a light shielding portion (particularly, a cylindrical light shielding portion), a shadow of the light shielding portion is projected onto the irradiation surface of the substrate, and there is a possibility that uniformity of light irradiation distribution in the irradiation surface of the substrate is deteriorated by the shadow. In this regard, by adjusting the height of the light-shielding portion (the distance from the substrate) by the distance-adjusting portion, for example, the range of the irradiation light from the adjacent light-shielding portion to the substrate can be adjusted, and a portion which is a shadow due to overlapping of the irradiation light and the like can be eliminated.
The light irradiation section may include a deuterium lamp. By using a deuterium lamp, vacuum ultraviolet light having a wavelength of 200nm or less and near ultraviolet light having a wavelength greater than 200nm can be irradiated to the substrate. As described above, the wavelength region of the spectrum of light irradiated from the deuterium lamp is relatively wide, and for example, when a resist pattern is formed on the surface of a substrate, the resist pattern receives energy of light of various wavelengths. This causes various reactions on the surface of the resist pattern, resulting in high fluidity, and as a result, the effect of improving the roughness of the surface can be enhanced.
The deuterium lamp may generate vacuum ultraviolet light having a wavelength of 200nm or less, for example, 160nm or less. In the deuterium lamp, for example, 160nm or less has a wavelength of a peak of a continuous spectrum, and therefore, by generating the vacuum ultraviolet light of 160nm or less, for example, in the case where a resist pattern is formed on the surface of a substrate, the effect of improving the roughness of the surface can be further improved.
In the plurality of light irradiation sections, at least one of an illuminance value of the vacuum ultraviolet light to be irradiated, a light angle of the vacuum ultraviolet light to be irradiated, and a distance from the substrate may be different from each other. As described above, by making the illuminance values, the light ray angles, or the heights of the light irradiation portions (the distance from the substrate) different from each other, the irradiation distribution can be positively adjusted, and the uniformity of the light irradiation distribution in the irradiation surface of the substrate can be further improved in accordance with the irradiation conditions.
The vacuum ultraviolet light source may further include a diffusion portion that diffuses vacuum ultraviolet light above the light shielding portion. The irradiation light has intensity unevenness due to the internal electrode structure of the light source (or the like). In this regard, by providing the diffusion portion above the light shielding portion, unevenness of the irradiation light can be averaged out, and uniformity of light irradiation distribution in the irradiation surface of the substrate can be further improved.
The wafer processing apparatus may further include a substrate rotating unit configured to rotate the wafer while the irradiation surface of the substrate is opposed to the light irradiating unit. This changes the irradiation position, and therefore, the uniformity of the light irradiation distribution on the irradiation surface can be further improved.
The substrate may further include a parallel moving unit that reciprocates the light shielding unit or the substrate in a direction parallel to the irradiation surface of the substrate. In this case, since the irradiation portion changes, the uniformity of the light irradiation distribution on the irradiation surface can be further improved. Further, in the method of reciprocating in the direction parallel to the irradiation surface, unlike the method of rotating the substrate, a portion (for example, the rotation center) in which the irradiation portion does not change is not easily generated. The light shielding portion may be made of a material having a reflectance of vacuum ultraviolet light of 90% or less.
The cylindrical light shielding member may extend in the traveling direction over substantially the entire area between the light irradiation section and the substrate. This can more suitably suppress the overlap of the irradiation range with the vacuum ultraviolet light of the other light irradiation section.
The cylindrical light shielding member may be provided between the light irradiation section and the substrate at a position close to the substrate. In the case of using vacuum ultraviolet light, it is necessary to perform vacuum evacuation by a vacuum pump so that the inside of the processing chamber is in a low oxygen state. In the case where the cylindrical light shielding member is provided over substantially the entire region between the light irradiation section and the substrate, it is difficult to evacuate the processing chamber by a vacuum pump, and the above-described evacuation cannot be performed smoothly. In this regard, by providing the cylindrical light-shielding member (only) in the region close to the substrate, the above-described evacuation can be easily performed as compared with the case where the cylindrical light-shielding member is provided in substantially the entire region between the light irradiation section and the substrate.
The cylindrical light shielding member may have a length equal to or less than half of the total length between the light irradiation section and the substrate. This makes it easier to evacuate the processing chamber.
The light shielding portion may have a plate-shaped light shielding member formed in a plate shape. As described above, by using a plate-like thin member as the light blocking member, it is possible to appropriately evacuate the process chamber without preventing the evacuation by the vacuum pump in the process chamber.
The light shielding portion may include: a cylindrical light shielding member formed in a cylindrical shape extending in a traveling direction of the vacuum ultraviolet light and provided between the light irradiation section and the substrate at a position close to the substrate; and a plate-shaped light shielding member formed in a plate shape, the plate-shaped light shielding member being provided below the cylindrical light shielding member. As described above, by using the cylindrical light-shielding member and the plate-shaped light-shielding member in combination, it is possible to appropriately suppress the overlap of the irradiation range of the vacuum ultraviolet light with the cylindrical light-shielding member and appropriately limit the irradiation range of the vacuum ultraviolet light with the plate-shaped light-shielding member provided below the cylindrical light-shielding member. Further, by using the plate-shaped light blocking member, the length of the cylindrical light blocking member can be shortened, and evacuation of the inside of the processing chamber can be appropriately performed by exhausting gas with the vacuum pump.
The plate-shaped light blocking member may be provided so as to contact a lower end of the cylindrical light blocking member. This can suppress leakage of the vacuum ultraviolet light from between the cylindrical light blocking member and the plate-shaped light blocking member, and appropriately suppress overlap of the irradiation ranges of the vacuum ultraviolet light.
The plate-shaped light blocking member may have a smaller area through which light passes when viewed in the traveling direction than the cylindrical light blocking member. Thereby, the irradiation range of the vacuum ultraviolet light can be appropriately defined by the plate-like light shielding member.
The plate-shaped light blocking member may be provided at a distance from the lower end of the cylindrical light blocking member. This enables more appropriate evacuation by the vacuum pump.
Effects of the invention
According to the present invention, the uniformity of the light irradiation distribution in the irradiation surface of the substrate can be improved.
Drawings
Fig. 1 is a schematic view showing a substrate processing apparatus according to the present embodiment.
Fig. 2 is a schematic view of a light irradiation apparatus of the substrate processing apparatus of fig. 1.
Fig. 3 is an explanatory view showing an irradiation range of the light irradiation device.
Fig. 4 is an explanatory view of a light irradiation device of a comparative example.
Fig. 5 is a schematic view showing a light irradiation device according to a modification example.
Fig. 6 is a schematic view showing a light irradiation device according to a modification example.
Fig. 7 is a schematic view showing a light irradiation device according to a modification.
Fig. 8 is a schematic view showing a light irradiation device according to a modification.
Fig. 9 is a schematic view showing a light irradiation device according to a modification.
Fig. 10 is a schematic view showing a light irradiation device according to a modification.
Fig. 11 is an explanatory view showing an irradiation range of the light irradiation device according to the modification.
Fig. 12 is a schematic view showing a light irradiation device according to a modification.
Fig. 13 is a schematic diagram showing an irradiation unit according to a modification.
Fig. 14 is a schematic view showing a light irradiation device according to a modification.
Fig. 15 is a schematic view showing a light irradiation device according to a modification.
Detailed Description
Although the embodiments of the present invention will be described with reference to the drawings, the following embodiments are illustrative of the present invention and are not intended to limit the present invention to the following. In the description, the same reference numerals are used for the same elements or elements having the same functions, and redundant description is omitted.
[ Structure of substrate processing apparatus ]
Fig. 1 is a schematic view (longitudinal side view) showing a substrate processing apparatus according to the present embodiment. The substrate processing apparatus 1 shown in fig. 1 is an apparatus for performing a predetermined process on a wafer W (substrate). The wafer W has a disk shape, but a wafer having a shape other than a circular shape such as a polygonal shape or a circular shape may be used. The wafer W may be, for example, a semiconductor substrate, a glass substrate, a mask substrate, an FPD (Flat Panel Display) substrate, or other various substrates. In the present embodiment, the substrate processing apparatus 1 will be described as an apparatus for improving the surface roughness of a resist pattern formed on the surface of a wafer W by irradiating the wafer W with light. The resist pattern is formed by exposing and developing a resist film formed on the wafer W.
As shown in fig. 1, the substrate processing apparatus 1 includes a processing container 21, a mounting table 20, a housing 43, and a light irradiation device 4. In fig. 1, only a part of the structure included in the light irradiation device 4 is shown.
The processing container 21 is, for example, a vacuum container provided in the atmosphere, and is a container for storing wafers conveyed by a conveyance mechanism (not shown). In the substrate processing apparatus 1, the wafers W are processed while being accommodated in the processing container 21. A transfer port 22 is formed in a side wall of the processing container 21. The transfer port 22 is an opening for transferring the wafer W into and out of the processing container 21. The transfer port 22 is opened and closed by a gate valve 23.
The mounting table 20 is a circular table provided in the processing container 21. The stage 20 horizontally mounts the wafer W such that the center thereof overlaps the center of the wafer W. For example, 3 lift pins (not shown) are provided so as to penetrate the mounting table 20 in the thickness direction (vertical direction). The lift pin is connected at its lower end to a lift mechanism (not shown) and is movable (raised and lowered) in the vertical direction by the lift mechanism. The lift pins, in a state of being lifted by the lift mechanism, have upper ends reaching above the upper surface of the mounting table 20, and transfer the wafer W to and from a transfer mechanism (not shown) that enters the processing container 21 through the transfer ports 22.
The housing 43 is provided above the processing container 21. The housing 43 houses the plurality of deuterium lamps 40 (light irradiation sections) of the light irradiation device 4. The light irradiation device 4 is configured to irradiate the surface of the wafer W with light for the purpose of improving roughness (unevenness) of the surface of the resist pattern. Next, details of the light irradiation device 4 will be described with reference to fig. 2 and 3.
[ Structure of light irradiation device ]
Fig. 2 is a schematic view showing the light irradiation device 4 of the substrate processing apparatus 1 of fig. 1. Fig. 3 is an explanatory view (a view of the irradiation range as viewed from above) showing the irradiation range of the light irradiation device 4. As shown in fig. 2, the light irradiation device 4 includes a plurality of deuterium lamps 40 (light irradiation sections) and a plurality of polygonal cylinders 50 (cylindrical light shielding members).
The deuterium lamp 40 irradiates the wafer W with Vacuum ultraviolet light having a wavelength of 200nm or less, more specifically, the deuterium lamp 40 irradiates light having a wavelength of 115nm to 400nm, that is, light having a continuous spectrum of 115nm to 400nm, as described above, the light irradiated from the deuterium lamp 40 includes Vacuum ultraviolet light (VUV light), that is, light having a wavelength of 10nm to 200nm, and the light irradiated from the deuterium lamp 40 includes near ultraviolet light (near ultraviolet light) having a wavelength longer than 200nm in addition to the Vacuum ultraviolet light (Vacuum ultraviolet light), and the wavelength of the peak of the continuous spectrum of the light irradiated from the deuterium lamp 40 in the present embodiment is, for example, 160nm or less and 150nm or more.
As described above, since the wavelength region of the spectrum of the light irradiated from the deuterium lamp 40 is relatively wide, the resist pattern on the front surface of the wafer W can receive various light energies, and as a result, various reactions occur on the surface of the resist pattern. Specifically, since chemical bonds at various positions in molecules constituting the resist film are cleaved to generate various compounds, the orientation of the molecules existing in the resist film before light irradiation is eliminated, the surface free energy of the resist film is reduced, and the internal stress is reduced. That is, by using the deuterium lamp 40 as a light source, the fluidity of the surface of the resist pattern is increased, and as a result, the effect of improving the roughness of the surface of the wafer W can be improved.
Here, the light irradiated to the resist film is more likely to reach the deep layer of the resist film as the wavelength is longer. In this regard, since the wavelength of the peak of the spectrum of the light irradiated from the deuterium lamp 40 is included in the wavelength band (10nm to 200nm) of the vacuum ultraviolet light as described above, the intensity of the light having a relatively large wavelength is small with respect to the light irradiated from the deuterium lamp 40. Therefore, the light irradiated from the deuterium lamp 40 rarely reaches the deep layer of the resist film, and the above-described cleavage of the molecular bond can be suppressed in the deep layer of the resist film. That is, by using the deuterium lamp 40 as a light source, a region that reacts by light irradiation in the resist pattern can be defined on the surface side.
The deuterium lamp 40 generates light of a top hat type having a flat intensity distribution compared to light of a gaussian distribution. In addition, even in the case of the top emission type light, the intensity distribution is not completely flat, but the intensity of the light becomes weak as the light is separated from the center (directly below the light source 41). The deuterium lamp 40 irradiates light having a width emitted from a light source 41 (see fig. 1) as a point light source, specifically, vacuum ultraviolet light having a conical optical path with the light source 41 as a vertex onto the wafer W. As described above, although the irradiation range is formed in a circular shape on the irradiation surface without shielding the light emitted from the deuterium lamp 40, the irradiation range is formed in a polygonal shape (a hexagonal shape in the example of the present embodiment) on the irradiation surface of the wafer W by shielding a part of the irradiation range with the polygonal tube 50 described later (details will be described later). In fig. 1, 2 and the like, the outermost optical path among the optical paths of the vacuum ultraviolet light is indicated by a dashed-dotted line.
The light irradiation apparatus 4 includes a plurality of deuterium lamps 40. The deuterium lamps 40 are arranged at predetermined intervals so that the light irradiation distribution on the irradiation surface of the wafer W becomes uniform. For example, as shown in fig. 3, one deuterium lamp 40 is provided directly above the center of the wafer W, and 6 deuterium lamps 40 are provided at equal intervals along the circumference of the disc-shaped wafer W (more specifically, slightly inside the circumference). Further, a shutter (not shown) may be provided between the deuterium lamp 40 and the polygonal cylinder 50. In addition, the illuminance value of the vacuum ultraviolet light irradiated from the plurality of deuterium lamps 40, the light angle of the irradiated vacuum ultraviolet light, and the distance from the wafer W are made the same.
The polygonal tube 50 is a light shielding portion provided corresponding to each deuterium lamp 40 so as to shield overlapping of irradiation ranges of vacuum ultraviolet light irradiated from the plurality of deuterium lamps 40. The polygonal tube 50 can block the overlap of the irradiation ranges of the vacuum ultraviolet light irradiated from the plurality of deuterium lamps 40 by removing the light emission (absorption, blocking) of the end regions of the vacuum ultraviolet light irradiated from the deuterium lamps 40. The polygonal tube 50 is provided corresponding to the deuterium lamp 40, and means that the polygonal tube 50 corresponds to the deuterium lamp 40 in a one-to-one manner and is provided directly below the light source 41 of the deuterium lamp 40 (see fig. 3). Specifically, the polygonal cylinder 50 is provided such that the light source 41 is located on the central axis thereof when viewed from the traveling direction of the vacuum ultraviolet light. The polygonal cylinder 50 extends in the traveling direction of the vacuum ultraviolet light over substantially the entire area between the deuterium lamp 40 and the wafer W. Substantially the entire area between the deuterium lamp 40 and the wafer W is at least a length more than half of the entire length between the deuterium lamp 40 and the wafer W. The polygonal cylinder 50 extends over substantially the entire region between the deuterium lamp 40 and the wafer W, and thus the overlap of the irradiation range with the vacuum ultraviolet light of another deuterium lamp 40 can be appropriately suppressed.
The polygonal cylinder 50 is formed in a polygonal shape, specifically, a regular hexagonal shape when viewed from the traveling direction of the vacuum ultraviolet light (see fig. 3). As shown in fig. 3, when viewed from the traveling direction of the vacuum ultraviolet light, the polygonal cylinders 50 adjacent to each other are closely attached to each other without a gap. More specifically, among the polygonal cylinders 50, the polygonal cylinders 50 provided corresponding to the deuterium lamps 40 positioned above the center of the wafer W are arranged such that each side of the regular hexagon comes into contact with the opposite side of the other polygonal cylinders 50 (6 polygonal cylinders 50 provided corresponding to the deuterium lamps 40 provided at equal intervals along the circumference of the wafer W). Further, among the plurality of polygonal cylinders 50, 6 polygonal cylinders 50 provided corresponding to the deuterium lamps 40 provided at equal intervals along the circumference of the wafer W have one side in contact with the opposite side of the polygonal cylinder 50 at the center, and 2 sides in contact with the adjacent sides of the polygonal cylinders 50 adjacent on the circumference.
The polygonal cylinder 50 is formed in a cylindrical shape extending in the traveling direction of the vacuum ultraviolet light (see fig. 2). The polygonal cylinder 50 may be made of any material having a low reflectance and a high absorption (blocking) rate with respect to vacuum ultraviolet light. The material having a low reflectance means, for example, a material having a reflectance of 90% or less, for example, 60% or less, of vacuum ultraviolet light. Specifically, as the material of the polygonal cylinder 50, a material obtained by coating the surface of a base material such as SUS or aluminum with an organic film that reduces the reflectance, a material obtained by performing sandblasting or roughening for forming an uneven surface on the surface of the base material, or the like can be used. The roughening treatment is, for example, an anodic oxidation treatment or the like performed on aluminum as a base material. When a vacuum atmosphere is considered, the above-mentioned metal such as SUS or aluminum may be used as the base material, but a resin material with low outgassing or the like may be used as the base material. The polygonal cylinder 50 extends from immediately below the light source 41 to a position close to the irradiation surface of the wafer W. As described above, the polygonal cylinder 50 provided immediately below the deuterium lamps 40 extends to a position close to the irradiation surface of the wafer W, so that the vacuum ultraviolet light irradiated from each deuterium lamp 40 passes through the corresponding polygonal cylinder 50 from the light source 41 to the irradiation surface of the wafer W, and the irradiation range on the wafer W is in a range corresponding to the shape of the polygonal cylinder 50 (see fig. 3). As described above, since the plurality of polygonal cylinders 50 are continuous (closely attached without gaps), irradiation ranges of the wafer W with the vacuum ultraviolet light passing through the polygonal cylinders 50 adjacent to each other are continuous with each other and do not overlap (or overlap ranges are small).
In addition, the polygonal tube 50 may be shaped so that a portion (portion away from the center) where the intensity of the vacuum ultraviolet light emitted from the light source 41 of the deuterium lamp 40 is weak can be blocked. The polygonal tube 50 is shaped so that light is blocked except for a portion that can secure, for example, 70 to 80%, for example, 90% or more of the portion with the highest intensity.
[ Effect ]
As described above, the light irradiation device 4 of the substrate processing apparatus 1 of the present embodiment includes: a plurality of deuterium lamps 40 that irradiate vacuum ultraviolet light having a wavelength of 200nm or less and a conical optical path having a light source 41 as a vertex, onto the wafer W; and a polygonal tube 50 provided corresponding to each deuterium lamp 40 so as to block an overlapping portion of irradiation ranges of vacuum ultraviolet light irradiated from the plurality of deuterium lamps 40, the polygonal tube 50 being formed in a polygonal shape when viewed from a traveling direction of the vacuum ultraviolet light.
Conventionally, when a wafer W is irradiated with light from a plurality of point light sources having a circular irradiation range on the wafer W, it is difficult to uniformly irradiate the irradiation surface of the wafer W with light. The description will be given with reference to fig. 4 (a) and 4 (b) as explanatory views of a light irradiation device of a comparative example. Fig. 4 (a) schematically shows a light irradiation apparatus provided with a plurality of deuterium lamps 40. Fig. 4 (b) shows the irradiation intensity of the light irradiation device shown in fig. 4 (a), specifically, the dotted line shows the irradiation intensity of each deuterium lamp 40, and the solid line shows the total irradiation intensity of the adjacent deuterium lamps 40. As shown in fig. 4a and 4 b, when the deuterium lamps 40 are arranged so that the irradiation ranges of the respective lights do not overlap as much as possible (see the central deuterium lamp 40 and the right deuterium lamp 40 shown in fig. 4 a), a portion E2 (see fig. 4 b) where the irradiation intensity of the light is weak occurs because the irradiation ranges are circular. On the other hand, in order not to generate the portion E2 in which the irradiation intensity is weakened, it is necessary to sufficiently overlap the irradiation ranges of the light irradiated from the respective deuterium lamps 40 (see the central deuterium lamp 40 and the left deuterium lamp 40 shown in fig. 4 a), and in this case, the irradiation intensity of the overlapped portion E1 (see fig. 4 b) becomes extremely strong, which is problematic. As described above, in the conventional structure in which the wafer W is irradiated with light from a plurality of light sources, it is difficult to uniformly irradiate the irradiation surface of the wafer W with light.
In this regard, in the light irradiation apparatus 4 of the present embodiment, the overlapping portion of the plurality of vacuum ultraviolet light beams having the conical optical path and irradiated onto the wafer W is shielded by the polygonal tube 50 provided corresponding to each deuterium lamp 40. Thereby, the irradiation range of each vacuum ultraviolet light on the wafer W becomes a polygon. The irradiation range is not circular but polygonal (specifically, regular hexagonal) as in the comparative example shown in fig. 4, and thus irradiation ranges of vacuum ultraviolet light passing through adjacent polygonal cylinders 50 can be made continuous with each other and not overlapped (or overlapping ranges can be made small). That is, the light irradiation device 4 of the present embodiment can improve the uniformity of the light irradiation distribution on the irradiation surface of the wafer W.
The polygonal tube 50 is formed in a tubular shape extending in the traveling direction of the vacuum ultraviolet light. The polygonal tube 50 provided in correspondence with the deuterium lamp 40 is formed in a tube shape extending in the height direction (the traveling direction of the vacuum ultraviolet light), and thus the influence of the vacuum ultraviolet light from the deuterium lamps 40 other than the deuterium lamp 40 corresponding to the polygonal tube 50 (for example, the adjacent deuterium lamps 40) can be appropriately eliminated. That is, the irradiation range can be appropriately prevented from overlapping with the vacuum ultraviolet light of the other deuterium lamp 40, and the uniformity of the light irradiation distribution on the irradiation surface of the wafer W can be further improved.
In the above-described light irradiation apparatus 4, the deuterium lamp 40 is used as a light irradiation section, and thus near ultraviolet light having a wavelength greater than 200nm can be irradiated to the wafer W in addition to vacuum ultraviolet light having a wavelength of 200nm or less. Thus, since the wavelength region of the spectrum of the light emitted from the deuterium lamp 40 is relatively wide, when a resist pattern is formed on the surface of the substrate W, for example, the resist pattern receives the energy of light of various wavelengths. This causes various reactions on the surface of the resist pattern, resulting in high fluidity, and as a result, the effect of improving the roughness of the surface can be enhanced.
The deuterium lamp 40 generates vacuum ultraviolet light having a wavelength of 160nm or less. In the deuterium lamp 40, for example, 160nm or less is a wavelength of a peak of a continuous spectrum, and thus, by generating the vacuum ultraviolet light of 160nm or less, for example, in the case where a resist pattern is formed on the surface of the wafer W, the effect of improving the surface roughness can be further improved.
[ modified examples ]
Although the embodiment of the present invention has been described above, the present invention is not limited to the above embodiment. For example, as shown in fig. 5, the illuminance value of the vacuum ultraviolet light irradiated from some of the deuterium lamps 40x in the plurality of light irradiation sections may be different from the illuminance value of the vacuum ultraviolet light irradiated from other deuterium lamps 40. In the example shown in fig. 5, the illuminance value of the vacuum ultraviolet light irradiated from the deuterium lamp 40x is larger than the illuminance value of the vacuum ultraviolet light irradiated from the deuterium lamp 40. As shown in fig. 6, the light angle of the vacuum ultraviolet light irradiated from some of the deuterium lamps 40y in the plurality of light irradiation sections may be different from the light angle of the vacuum ultraviolet light irradiated from other deuterium lamps 40. In the example shown in fig. 6, the light angle of the vacuum ultraviolet light irradiated from the deuterium lamp 40y is larger than the light angle of the vacuum ultraviolet light irradiated from the deuterium lamp 40. As shown in fig. 7, the distance between the wafer W and some of the deuterium lamps 40z in the plurality of light irradiation sections may be different from the distance between the wafer W and other deuterium lamps 40, and in the example shown in fig. 7, the distance between the wafer W and the deuterium lamps 40z is smaller than the distance between the wafer W and the deuterium lamps 40. As described above, by making the illuminance values, the beam angles, or the heights (the distances from the wafer W) of the plurality of light irradiation units different from each other, the irradiation distribution can be adjusted actively, and the uniformity of the light irradiation distribution on the irradiation surface of the wafer W can be further improved in accordance with the irradiation conditions from the light irradiation units.
The light irradiation device may further include a separation distance adjustment unit 60 shown in fig. 8. The spacing distance adjusting unit 60 is a mechanism for adjusting the spacing distance between the wafer W and the polygonal cylinder 50 serving as the light shielding unit. Specifically, the spacing distance adjusting unit 60 moves the polygonal cylinder 50 up and down under the control of a controller (not shown) to adjust the spacing distance between the polygonal cylinder 50 and the wafer W. As described above, the polygonal cylinder 50 is configured to uniformly irradiate the irradiation surface of the wafer W with light by making the irradiation range polygonal, but it is conceivable that the shadow of the polygonal cylinder 50 is projected onto the irradiation surface of the wafer W by providing the polygonal cylinder 50, and the uniformity of the light irradiation distribution on the irradiation surface of the wafer W cannot be sufficiently achieved due to the shadow. In this regard, by adjusting the height of the polygonal cylinder 50 (the distance from the wafer W) by the distance adjusting unit 60, for example, the width of the irradiation light from the adjacent polygonal cylinder 50 to the wafer W can be adjusted, and the portion that becomes a shadow can be eliminated by overlapping the irradiation lights with each other. The height of the polygonal cylinder 50 adjusted by the distance adjusting unit 60 is determined by, for example, evaluating the irradiation angle from the deuterium lamp 40 and the illuminance of each portion of the wafer W in advance.
In addition, the light irradiation apparatus may further include a wafer rotating section 70 (substrate rotating section) shown in fig. 9. The wafer rotating unit 70 is a mechanism for rotating the wafer W in a state where the irradiation surface of the wafer W faces the deuterium lamp 40. Specifically, the wafer rotating unit 70 is connected to the mounting table 20 on which the wafer W is mounted via a rotating shaft, and rotates the mounting table 20 and the wafer W mounted on the mounting table 20 by rotating the rotating shaft under the control of a controller (not shown). Since the irradiation position of the deuterium lamp 40 changes as the wafer W rotates, the uniformity of the light irradiation distribution on the irradiation surface of the wafer W can be further improved. The light irradiation device may be a device that rotates the polygonal cylinder 50 and the deuterium lamp 40 relative to the wafer W without rotating the wafer W. The light irradiation device may further include a parallel movement unit configured to reciprocate the polygonal cylinder 50 or the wafer W by about 10mm in a direction (horizontal direction) parallel to the irradiation surface of the wafer W. In this case, since the irradiation position of the deuterium lamp 40 also changes, the uniformity of the light irradiation distribution on the irradiation surface of the wafer W can be further improved. Further, the method of reciprocating in the direction parallel to the irradiation surface has an advantage that a portion (for example, the rotation center) where the irradiation portion is not changed is less likely to be generated, unlike the method of rotating the wafer W. For example, by rotating the plurality of polygonal cylinders 50 and the deuterium lamps 40 relative to the wafer W and performing scanning operations in parallel directions, the entire surface of the wafer W can be irradiated with vacuum ultraviolet light without providing the number of deuterium lamps 40 that can simultaneously irradiate the entire surface of the wafer W. As described above, when the polygon cylinder 50 and the deuterium lamp 40 are caused to perform the scanning operation, the number of the polygon cylinder 50 and the deuterium lamp 40 may be small (for example, one each).
The light irradiation device may further include a diffusion portion 80 shown in fig. 10. The diffuser 80 diffuses vacuum ultraviolet light above the polygonal tube 50. In the example shown in fig. 10, the diffuser 80 is a mesh member and has a function of reflecting and diffusing a part of the vacuum ultraviolet light. The diffusion portion 80 may be a rod-shaped member or the like as long as it can reflect and diffuse a part of the vacuum ultraviolet light. In the diffusion portion 80, the area of the portion for reflecting and diffusing the vacuum ultraviolet light is smaller than the area of the portion for passing the vacuum ultraviolet light downward. When the intensity of the irradiation light varies due to the internal electrode structure of the light source (lamp), the diffusion portion 80 is provided above the polygonal cylinder 50, so that the variation of the irradiation light can be averaged, and the uniformity of the light irradiation distribution on the irradiation surface of the wafer W can be further improved.
Further, although the polygonal cylinder 50 has been described as a regular hexagon when viewed from the traveling direction of the vacuum ultraviolet light, the polygonal cylinder 50x is not limited to this, and may be a quadrangle as shown in fig. 11 (a), for example. The number of polygonal cylinders 50 is not limited to the example shown in fig. 3, and a total of 13 polygonal cylinders 50y may be provided as shown in fig. 11 (b), for example.
Further, although the case where the light shielding portion is the polygonal tube 50 has been described, the light shielding portion is not limited to this, and may be a tube-shaped member extending in the height direction as long as the light shielding portion is formed in a polygonal shape when viewed from the traveling direction of the vacuum ultraviolet light. For example, as shown in fig. 12, the light shielding portion may have a mask 200 (plate-shaped light shielding member) formed in a plate shape. The mask 200 is formed in a polygonal shape when viewed from the traveling direction of the vacuum ultraviolet light, as in the polygonal cylinder 50. Specifically, as shown in fig. 13 (a), a hexagonal mask 200a, a rectangular mask 200b, or the like can be used when viewed from the traveling direction of the vacuum ultraviolet light. Unlike the polygonal cylinder 50, the mask 200 is formed in a thin plate shape having a small thickness (thickness in the traveling direction of the vacuum ultraviolet light). By providing such a mask 200, the irradiation range of each vacuum ultraviolet light on the wafer W is polygonal, and the occurrence of portions where the irradiation cannot be performed (or portions where the irradiation intensity is weakened) can be suppressed without overlapping the irradiation ranges of the vacuum ultraviolet light. That is, the mask 200 can improve the uniformity of the light irradiation distribution on the irradiation surface of the wafer W. Further, since the mask 200 is formed in a thin plate shape as described above, it is possible to easily perform evacuation by a vacuum pump in the processing chamber, as compared with the case where the polygonal cylinder 50 is provided. This makes it possible to more appropriately evacuate the processing chamber.
In addition, as shown in fig. 14, the light shielding portion may have: a polygonal tube 250 formed in a tube shape extending in the traveling direction of the vacuum ultraviolet light and provided between the deuterium lamp 40 and the wafer W at a position close to the wafer W (i.e., at a position close to the lower side); and a mask 200 formed in a plate shape. The polygonal cylinder 250 has a length of less than half of the total length between the deuterium lamp 40 and the wafer W, for example. As described above, the polygonal cylinder 250 is smaller and is provided only in a region close to the wafer W, compared to the polygonal cylinder 50 (see fig. 2) provided in substantially the entire region between the deuterium lamp 40 and the wafer W. The mask 200 is disposed below the polygonal cylinder 250, and more particularly, is disposed to contact a lower end of the polygonal cylinder 250. The mask 200 may be disposed at a position very close to the wafer W from the viewpoint of limiting the irradiation range of the light, but at a distance (for example, 30mm) from the wafer W to the extent that the wafer W can be conveyed by the conveying arm. The mask 200 has a smaller area through which light passes when viewed from the traveling direction of the vacuum ultraviolet light than the polygonal cylinder 250. Thereby, the irradiation range of the vacuum ultraviolet light can be appropriately defined by the mask 200.
Here, a basic configuration of the substrate processing apparatus of fig. 14 will be described. As shown in fig. 14, the substrate processing apparatus includes a process chamber 210 and a light source chamber 212. The processing chamber 210 includes a housing 214, a spin holder 216, a gate valve 218, and a vacuum pump 222. The housing 214 is a part of a vacuum chamber provided in an atmospheric atmosphere, for example, and can accommodate the wafer W conveyed by a conveyance mechanism not shown. The case 214 is a bottomed cylindrical body opened upward. Through holes 214a and 214c are provided in the wall surface of the housing 214.
The rotation holding portion 216 includes a rotation portion 216a, a shaft 216b, and a holding portion 216 c. The rotating portion 216a rotates the shaft 216b based on an operation signal from a controller (not shown). The rotating portion 216a is a power source such as an electric motor. The holding portion 216c is provided at the distal end portion of the shaft 216 b. The holding portion 216c can hold the wafer W in a state where the posture of the wafer W is substantially horizontal. When the rotating portion 216a rotates with the wafer W placed on the holding portion 216c, the wafer W rotates around an axis (rotation axis) perpendicular to the surface thereof.
The gate valve 218 is disposed on an outer surface of the sidewall of the housing 214. The gate valve 218 is configured to be operable in response to an instruction from a controller (not shown) to close and open the through hole 214a of the housing 214. When the gate valve 218 opens the through hole 214a, the wafer W can be carried into the delivery case 214. That is, the through hole 214a also functions as an inlet/outlet for the wafer W.
The vacuum pump 222 is configured to be able to discharge gas from the inside of the casing 214 and to bring the inside of the casing 214 into a vacuum state (low oxygen state).
The light source chamber 212 includes a housing 224, a partition wall 226, an opening and closing member 228, and a plurality of deuterium lamps 40.
The housing 224 is, for example, a part of a vacuum container provided in the atmospheric atmosphere. The case 224 is a bottomed cylindrical body opened downward. The housing 224 is configured such that the open end of the housing 224 is opposite the open end of the housing 214.
The partition wall 226 is disposed between the housings 214 and 224 and can partition a space in the housing 214 and a space in the housing 224. In other words, the partition wall 226 functions as a top wall of the housing 214, and functions as a bottom wall of the housing 224. That is, the housing 224 is disposed adjacent to the housing 214 in a direction perpendicular to the surface of the wafer W. The space V in the housing 224 partitioned by the partition wall 226 is a flat space having a height in the vertical direction smaller than a dimension in the horizontal direction.
The partition wall 226 is provided with a plurality of through holes 226 a. The plurality of through holes 226a are disposed so as to overlap the shutter 228 in the vertical direction. Each of the plurality of through-holes 226a is filled with a window material that transmits vacuum ultraviolet light. The window material is, for example, glass (e.g., magnesium fluoride).
The opening/closing member 228 is disposed in the space V, and is configured to be capable of blocking and passing vacuum ultraviolet light irradiated from the deuterium lamp 40. The opening/closing member 228 has a disc shape, for example. The opening/closing member 228 is provided with a plurality of through holes.
By using the polygonal cylinder 250 and the mask 200 in combination as described above, it is possible to appropriately suppress overlap of the irradiation ranges of the vacuum ultraviolet light with the polygonal cylinder 250 and appropriately limit the irradiation range of the vacuum ultraviolet light with the mask 200 provided below the polygonal cylinder 250. Further, by using the mask 200, the length of the polygonal cylinder 250 can be shortened, and the inside of the processing chamber 210 can be appropriately evacuated by exhausting gas using the vacuum pump 222. Further, by placing the mask 200 in contact with the lower end of the polygonal cylinder 250, leakage of vacuum ultraviolet light from between the polygonal cylinder 250 and the mask 200 can be suppressed, and overlap of the irradiation range of the vacuum ultraviolet light can be appropriately suppressed. Further, the light shielding portion may be formed only by the small polygonal cylinder 250 provided below (i.e., without the mask 200).
Further, as shown in fig. 15, the mask 200 may be disposed to be spaced apart from the lower end of the polygonal cylinder 250. This makes it possible to easily perform evacuation by the vacuum pump 222, and more suitably perform evacuation by the vacuum pump 222. In the structure of fig. 15, the size of the area of the mask 200 and the light passing through the polygonal cylinder 50 may be the same as each other when viewed from the traveling direction of the vacuum ultraviolet light. In addition, one or more holes may be provided in the polygonal cylinder 50 in order to facilitate evacuation.
Description of the reference numerals
4 … light irradiation device; 40. 40x, 40y, 40z … deuterium lamps (light irradiation sections); 41 … light source; 50. a 50x, 50y … polygonal tube (light-shielding portion, tubular light-shielding member); 60 … spacing distance adjustment; 70 … wafer rotation part (substrate rotation part); 80 … diffuser portion; 200 … mask (light-shielding portion, plate-like light-shielding member); w … wafer.
Claims (19)
1. A light irradiation device characterized by comprising:
a plurality of light irradiation units for irradiating the substrate with vacuum ultraviolet light having a conical light path with a light source as a vertex; and
a light shielding portion provided corresponding to each light irradiation portion so as to shield an overlapping portion of irradiation ranges of the vacuum ultraviolet light irradiated from the plurality of light irradiation portions,
the light shielding portion is formed in a polygonal shape when viewed from a traveling direction of the vacuum ultraviolet light.
2. A light irradiation apparatus as set forth in claim 1, wherein:
the light blocking portion has a cylindrical light blocking member formed in a cylindrical shape extending in a traveling direction of the vacuum ultraviolet light.
3. A light irradiation apparatus as set forth in claim 2, wherein:
the cylindrical light shielding member extends in the traveling direction over substantially the entire region between the light irradiation section and the substrate.
4. A light irradiation apparatus as set forth in claim 2, wherein:
the cylindrical light shielding member is provided between the light irradiation section and the substrate at a position close to the substrate.
5. A light irradiation apparatus as set forth in claim 4, wherein:
the cylindrical light shielding member has a length less than half of the total length between the light irradiation section and the substrate.
6. A light irradiation device as set forth in any one of claims 1 to 5, wherein:
the light shielding portion has a plate-shaped light shielding member formed in a plate shape.
7. A light irradiation apparatus as set forth in claim 1, wherein:
the light shielding portion includes: a cylindrical light shielding member formed in a cylindrical shape extending in a traveling direction of the vacuum ultraviolet light and provided between the light irradiation section and the substrate at a position close to the substrate; and a plate-shaped light shielding member formed in a plate shape,
the plate-shaped light shielding member is disposed below the cylindrical light shielding member.
8. A light irradiation apparatus as set forth in claim 7, wherein:
the plate-shaped light blocking member is disposed in contact with a lower end of the cylindrical light blocking member.
9. A light irradiation apparatus as set forth in claim 8, wherein:
the plate-shaped light blocking member has a smaller area through which light passes when viewed in the traveling direction than the cylindrical light blocking member.
10. A light irradiation apparatus as set forth in claim 7, wherein:
the plate-shaped light blocking member is disposed at a space from a lower end of the cylindrical light blocking member.
11. A light irradiation apparatus as set forth in any one of claims 1 to 10, wherein:
and a spacing distance adjusting part for adjusting the spacing distance between the light shielding part and the substrate.
12. A light irradiation apparatus as set forth in any one of claims 1 to 11, wherein:
the light irradiation section includes a deuterium lamp.
13. A light irradiation apparatus as set forth in claim 12, wherein:
the deuterium lamp generates vacuum ultraviolet light with a wavelength below 200 nm.
14. A light irradiation apparatus as set forth in claim 13, wherein:
the deuterium lamp generates vacuum ultraviolet light with a wavelength below 160 nm.
15. A light irradiation apparatus as set forth in any one of claims 1 to 14, wherein:
in the plurality of light irradiation portions, at least one of an illuminance value of the irradiated vacuum ultraviolet light, a light angle of the irradiated vacuum ultraviolet light, and a distance from the substrate is different from each other.
16. A light irradiation apparatus as set forth in any one of claims 1 to 15, wherein:
the vacuum ultraviolet light source further includes a diffusion unit that diffuses the vacuum ultraviolet light above the light shielding unit.
17. A light irradiation apparatus as set forth in any one of claims 1 to 16, wherein:
the substrate rotating unit rotates the substrate in a state where the irradiation surface of the substrate is opposed to the light irradiation unit.
18. A light irradiation apparatus as set forth in any one of claims 1 to 17, wherein:
the apparatus further includes a parallel moving unit that reciprocates the light shielding unit or the substrate in a direction parallel to the irradiation surface of the substrate.
19. A light irradiation apparatus as set forth in any one of claims 1 to 18, wherein:
the light shielding part is made of a material with the vacuum ultraviolet light reflectivity of less than 90%.
Applications Claiming Priority (5)
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| JP2017-249509 | 2017-12-26 | ||
| JP2017249509 | 2017-12-26 | ||
| JP2018115179 | 2018-06-18 | ||
| JP2018-115179 | 2018-06-18 | ||
| PCT/JP2018/045734 WO2019131144A1 (en) | 2017-12-26 | 2018-12-12 | Light irradiation device |
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| CN111492314A true CN111492314A (en) | 2020-08-04 |
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| CN201880081427.5A Pending CN111492314A (en) | 2017-12-26 | 2018-12-12 | Light irradiation device |
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| Country | Link |
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| JP (1) | JP6920469B2 (en) |
| KR (1) | KR20200097777A (en) |
| CN (1) | CN111492314A (en) |
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| JP7356847B2 (en) * | 2019-09-03 | 2023-10-05 | 東京エレクトロン株式会社 | Substrate processing equipment, substrate processing method, and storage medium |
| JP7100398B1 (en) * | 2021-05-06 | 2022-07-13 | 株式会社 ベアック | Exposure device |
| WO2024090327A1 (en) * | 2022-10-28 | 2024-05-02 | 東京エレクトロン株式会社 | Substrate processing device |
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| JP5598239B2 (en) * | 2010-10-08 | 2014-10-01 | ウシオ電機株式会社 | Light irradiation device |
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- 2018-12-12 WO PCT/JP2018/045734 patent/WO2019131144A1/en active Application Filing
- 2018-12-12 JP JP2019562960A patent/JP6920469B2/en active Active
- 2018-12-12 CN CN201880081427.5A patent/CN111492314A/en active Pending
- 2018-12-12 KR KR1020207020141A patent/KR20200097777A/en active IP Right Grant
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| TWI804543B (en) | 2023-06-11 |
| JP6920469B2 (en) | 2021-08-18 |
| TW201939169A (en) | 2019-10-01 |
| KR20200097777A (en) | 2020-08-19 |
| WO2019131144A1 (en) | 2019-07-04 |
| JPWO2019131144A1 (en) | 2020-11-19 |
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