JP2005044881A - Heat treatment apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To restrain scattering of fragments of a substrate with easy structure even if the substrate is broken in a chamber. <P>SOLUTION: A heat treatment apparatus 1 is provided with a chamber body 6 for forming a space in which the substrate 9 is subjected to heat treatment, a susceptor 7 which holds the substrate 9 in the chamber body 6, a heater reflector 30 which reflects thermal energy from the susceptor 7, a susceptor lifting mechanism 4 which goes up and down the susceptor 7 to a bottom surface of the chamber body 6, a liner 20 arranged at periphery of the susceptor 7, and an optical irradiation portion 5 which heats the substrate 9 by irradiation of light to the substrate 9. In the heat treatment apparatus 1, labyrinth structure 60 is formed at the periphery of the susceptor 7 by using the liner 20 and the heater reflector 30, so that scattering of fragments of the substrate 9 can be restrained even if the substrate 9 is broken in a chamber 65 when thermal treatment is performed. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a heat treatment apparatus for performing a process involving heating on a substrate.
[0002]
[Prior art]
Conventionally, heat treatment is performed on a substrate at various stages of manufacturing a semiconductor substrate or the like (hereinafter simply referred to as “substrate”), and one of the heat treatment methods is a rapid thermal process (hereinafter referred to as “RTP”). ") Is used. In RTP, a substrate in a processing chamber is heated with a halogen lamp or the like and heated to a predetermined temperature in a short time, thereby reducing the thickness of an insulating film such as an oxide film and activating an impurity added by an ion implantation method. It is possible to realize a treatment that is difficult by a long-time heat treatment using a conventional electric furnace, such as suppression of impurity re-diffusion. In recent years, a technique for heating a substrate in a shorter time using a flash lamp as a substrate heating source has been proposed.
[0003]
By the way, not only RTP but also a heat treatment apparatus for performing heat treatment on a substrate, it is necessary to keep the inside of the heat treatment chamber clean so that unnecessary particles do not adhere to the surface of the substrate and deteriorate the quality. Various techniques have been proposed to prevent the heat treatment chamber from being contaminated by particles) or the like.
[0004]
For example, in Patent Document 1, since the edge portion of the susceptor that supports the substrate and the edge portion of the preheating ring have complementary staircase shapes, the unnecessary material is prevented from being deposited on the back surface of the susceptor, and the unnecessary material is peeled off. A technique for suppressing generation of particles at the time is disclosed.
[0005]
Patent Document 2 discloses a technique for preventing vapor deposition of unnecessary materials on the back surface of the heat generating plate and the like by air-tightly welding the heat generating plate for heating the substrate and the heat reflecting plate cover.
[0006]
Furthermore, in the vapor phase growth apparatus disclosed in Patent Document 3, the skirt portions suspended from the respective edge portions of the susceptor and the ring are arranged so as to face each other, thereby preventing the susceptor from being damaged and the rear surface of the susceptor and the wall surface in the heat treatment chamber. A technique for suppressing the deposition of unwanted materials on the surface is disclosed.
[0007]
[Patent Document 1]
JP 7-78863 A
[Patent Document 2]
Japanese Patent Laid-Open No. 10-326788
[Patent Document 3]
JP 2000-12470 A
[0008]
[Problems to be solved by the invention]
By the way, the cause of contamination in the heat treatment chamber includes not only particles generated when the above-described deposited unnecessary materials are peeled off, but also fragments of the substrate cracked during the processing. In particular, in the heat treatment performed using a flash lamp, the substrate may be shattered due to rapid thermal expansion of the surface in order to raise the surface temperature of the substrate in a very short time.
[0009]
In conventional equipment, broken substrate fragments are scattered over a wide area in the heat treatment chamber and enter the gaps of complex structures. To remove the cause of contamination and restore the equipment, open the heat treatment chamber Need to be cleaned, which takes a lot of time and effort. Although it is conceivable to increase the susceptor as one method for suppressing the scattering of such fragments in the vicinity of the susceptor holding the substrate, this method is not practical because it directly leads to an increase in the size of the entire heat treatment apparatus.
[0010]
The present invention has been made in view of the above problems, and an object thereof is to suppress scattering of fragments of a substrate with a simple structure even when the substrate is cracked in a heat treatment chamber.
[0011]
[Means for Solving the Problems]
The invention according to claim 1 is a heat treatment apparatus for performing a process with heating on a substrate, and heats the substrate while holding the substrate in the chamber body, and forming a space for processing the substrate. A labyrinth structure disposed in the chamber body together with the heat reflecting portion, the heat reflecting portion that reflects at least the heat energy radiated from the holding portion at the outer periphery of the holding portion, and the outer periphery of the holding portion. And an annular portion that forms
[0012]
Invention of Claim 2 is the heat processing apparatus of Claim 1, Comprising: The said heat | fever reflection part is mounted so that the cylinder part surrounding the outer periphery of the said holding | maintenance part and the said cylinder part can be separated, And a bottom portion that covers a surface opposite to the surface of the holding portion that holds the substrate.
[0013]
Invention of Claim 3 is the heat processing apparatus of Claim 1 or 2, Comprising: The raising / lowering mechanism which raises / lowers the said holding part with respect to the bottom face of the said chamber main body is further provided, and the said heat | fever reflective part is the said holding | maintenance The labyrinth structure is formed in a state where the heat reflecting part is raised and lowered together with the part and raised with respect to the bottom surface.
[0014]
A fourth aspect of the present invention is the heat treatment apparatus according to any one of the first to third aspects, further comprising a light irradiation unit that irradiates the substrate with light and heats the substrate.
[0015]
According to a fifth aspect of the present invention, there is provided a heat treatment apparatus for performing a process involving heating on a substrate, a chamber body that forms a space for processing the substrate, a holding unit that holds the substrate in the chamber body, and the holding A heating unit that heats the substrate held by the unit, a liner that surrounds the outer periphery of the holding unit, and an annular unit that is disposed on the outer periphery of the holding unit and forms a labyrinth structure in the chamber body together with the liner .
[0016]
A sixth aspect of the present invention is the heat treatment apparatus according to the fifth aspect, wherein the liner is detachable from the chamber body.
[0017]
The invention according to claim 7 is the heat treatment apparatus according to claim 5 or 6, further comprising an elevating mechanism for raising and lowering the holding portion relative to a bottom surface of the chamber body, wherein the annular portion is the holding portion. The labyrinth structure is formed in a state where the annular portion is raised with respect to the bottom surface.
[0018]
The invention according to claim 8 is a heat treatment apparatus for performing a process involving heating on a substrate, a chamber main body that forms a space for processing the substrate, a holding unit that holds the substrate in the chamber main body, and the holding A heating part for heating the substrate held by the part, and a first annular part and a second annular part that form a labyrinth structure on the outer periphery of the holding part, wherein the first annular part is an outer periphery of the holding part A first cylindrical portion surrounding the first cylindrical portion, and a first support portion extending outward from a substrate-side end portion held by the holding portion of the first cylindrical portion, wherein the second annular portion is the first cylindrical portion. A second cylindrical portion that surrounds the outer periphery of the portion and is spaced from the first support portion by a predetermined gap, and extends from the end of the second cylindrical portion opposite to the first support portion to the inside. A predetermined gap is arranged from the other end of the first cylindrical portion. And a second supporting portion being.
[0019]
The invention according to claim 9 is the heat treatment apparatus according to claim 8, further comprising an elevating mechanism for elevating and lowering the holding part relative to the bottom surface of the chamber body, wherein the second annular part is the holding part. The labyrinth structure is formed in a state where the second annular portion is raised with respect to the bottom surface.
[0020]
A tenth aspect of the present invention is the heat treatment apparatus according to any one of the fifth to ninth aspects, wherein the heating unit is a light irradiation unit that irradiates the substrate with light to heat the substrate.
[0021]
The invention according to claim 11 is the heat treatment apparatus according to claim 4 or 10, wherein the light irradiation unit has a flash lamp.
[0022]
DETAILED DESCRIPTION OF THE INVENTION
FIG. 1 is a diagram showing a configuration of a heat treatment apparatus 1 according to an embodiment of the present invention. The heat treatment apparatus 1 irradiates a semiconductor substrate 9 (hereinafter referred to as “substrate 9”) with light and heats it. It is an apparatus that performs the accompanying process.
[0023]
The heat treatment apparatus 1 includes a chamber side portion 63 having a substantially cylindrical inner wall, a chamber bottom portion 62 that covers a lower portion of the chamber side portion 63, and a translucent plate 61 that covers an upper portion of the chamber side portion 63. A chamber body 6 is formed which forms a space (hereinafter referred to as “chamber”) 65 for heat treatment.
[0024]
The heat treatment apparatus 1 also includes a susceptor 7 that heats the substrate 9 while holding the substrate 9 in the chamber body 6, a heater reflector 30 that reflects thermal energy radiated from the susceptor 7, and the susceptor 7 on the bottom surface of the chamber body 6. A susceptor elevating mechanism 4 that moves up and down with respect to a certain chamber bottom 62, a liner 20 disposed on the outer periphery of the susceptor 7, a light irradiating unit 5 that irradiates light to the substrate 9 held by the susceptor 7, The control part 8 which controls these structures and performs heat processing is provided.
[0025]
The translucent plate 61 is formed of, for example, a material having infrared transparency such as quartz, and functions as a chamber window that transmits light from the light irradiation unit 5 and guides it to the chamber 65.
[0026]
The chamber bottom 62 and the chamber side 63 are made of, for example, a metal material having excellent strength and heat resistance, such as stainless steel. The chamber bottom 62 penetrates the susceptor 7 and attaches the substrate 9 to its lower surface ( A plurality of support pins 70 are erected to support from the surface opposite to the side irradiated with light from the light irradiation unit 5.
[0027]
The chamber side 63 has an opening 66 for carrying in and out the substrate 9, and the opening 66 can be opened and closed by a gate valve 68 that rotates about a shaft 67. A portion of the chamber side 63 opposite to the opening 66 has a processing gas (for example, nitrogen (N ₂ ) Gas) is provided, and is connected to a supply device (not shown) via an on-off valve 80. Further, the opening 66 is formed with a discharge path 79 for discharging the gas in the chamber, and is connected to an exhaust device (not shown) via an on-off valve 81.
[0028]
The susceptor 7 includes a heating plate 74 that preheats the substrate 9 (so-called assist heating), and a heat diffusion plate 73 that is installed on the upper surface of the heating plate 74 (the surface on the side where the susceptor 7 holds the substrate 9). A pin 75 for preventing the displacement of the substrate 9 is provided on the upper surface of the heat diffusion plate 73. A cylindrical body 41 that supports the susceptor 7 is provided on the lower surface side of the heating plate 74.
[0029]
The heating plate 74 is made of aluminum nitride, and has a heater (not shown) inside and a sensor for controlling the heater. The thermal diffusion plate 73 is made of sapphire (Al ₂ O ₃ : Aluminum oxide), quartz, etc., and diffuses the thermal energy radiated from the heating plate 74.
[0030]
The heater reflector 30 is made of quartz and is disposed around the susceptor 7 and the cylindrical body 41. FIG. 2 is a perspective view showing the heater reflector 30. The heater reflector 30 includes an annular reflector cylindrical portion 31 that surrounds the outer periphery of the susceptor 7 shown in FIG. 1, a reflector bottom portion 32 that covers a surface opposite to the surface of the susceptor 7 that holds the substrate 9, and a cylindrical body. A reflector lower portion 33 is provided around 41, and a reflector cylindrical portion 31 is detachably mounted on the reflector bottom portion 32. Here, the outer periphery of the susceptor 7 is the periphery of the surface extending from the edge of the surface of the susceptor 7 that holds the substrate 9 to the edge of the opposite surface (that is, the side surface of the substantially disc-shaped susceptor 7). In other words, it refers to the radially outer side of the substrate 9 held by the susceptor 7.
[0031]
The reflector bottom 32 is formed with a through hole 34 through which each of the plurality of support pins 70 passes. In addition, the entire surface of the heater reflector 30 is roughened by blasting to exhibit a satin pattern, and heat energy from the heating plate 74 is prevented from being transmitted to other than the heat diffusion plate 73.
[0032]
As shown in FIG. 1, the susceptor elevating mechanism 4 includes a moving plate 42, a guide member 43, a fixed plate 44, a ball screw 45, connecting members 46 and 47, a nut 48, and a motor 40. The moving plate 42 is connected to the susceptor 7 via the cylindrical body 41 and connected to the nut 48 via connecting members 46 and 47, and can be moved up and down by being guided by a guide member 43 whose upper end is fixed to the chamber bottom 62. The The motor 40 is installed at the center of a fixed plate 44 attached to the lower end of the guide member 43, and a ball screw 45 is connected thereto. When the susceptor 7 is moved up and down by the susceptor lifting mechanism 4, the motor 40 rotates the ball screw 45 under the control of the control unit 8, and the moving plate 42 connected to the nut 48 moves along the guide member 43. The susceptor 7 moves smoothly in the Z direction in FIG.
[0033]
Further, the lower end of the heater reflector 30 (that is, the end opposite to the reflector bottom 32 of the reflector lower portion 33) is fixed to the moving plate 42, and when the susceptor 7 moves up and down, the heater reflector 30 also moves up and down together with the susceptor 7. .
[0034]
A telescopic bellows 77 that surrounds the cylindrical body 41 and the reflector lower portion 33 is provided between the moving plate 42 and the chamber bottom 62. One end of the bellows 77 is connected to the chamber bottom 62 and the other end is connected to the moving plate 42 to keep the chamber 65 airtight. The bellows 77 is contracted when the susceptor elevating mechanism 4 raises the susceptor 7 and the heater reflector 30 with respect to the chamber bottom 62, and the bellows 77 is expanded when it is lowered.
[0035]
The liner 20 is made of, for example, quartz and is detachably attached to the chamber body 6 along the chamber bottom 62 and the chamber side 63 so as to surround the outer periphery of the susceptor 7 in the chamber 65.
[0036]
FIG. 3 is a perspective view showing the liner 20. The liner 20 includes a liner bottom 24 that covers the inner wall of the chamber bottom 62 shown in FIG. 1, a liner side 25 that covers the inner wall of the chamber side 63, and an upper end of the liner side 25 (opposite to the liner bottom 24). Liner ring portion 26 extending from the edge of the inner ring to the inside of the chamber 65 and an annular member integrally having a liner cylindrical portion 27 extending from the inner edge of the liner ring portion 26 to the liner bottom 24. . In FIG. 3, the liner bottom 24 is shown in the lower stage, and the liner side part 25, the liner ring part 26, and the liner cylindrical part 27 are shown in the upper stage.
[0037]
In the liner 20, the liner side portion 25 can be separated from the liner bottom portion 24 and the liner ring portion 26 can be separated from the liner side portion 25, so that the liner 20 can be easily attached to and detached from the chamber body 6.
[0038]
The liner bottom 24 is formed with a through hole 21 into which the cylindrical body 41 and the reflector lower portion 33 are inserted, and a through hole 22 into which the support pin 70 is inserted. An annular projecting portion 28 that slightly projects inward of 65 is provided. The position where the through hole 22 is formed corresponds to the position of the through hole 34 formed in the reflector bottom 32 shown in FIG.
[0039]
The liner side portion 25 has an opening 23 that allows the opening portion 66 and the chamber 65 to communicate with each other when the liner 20 is attached to the chamber body 6, and a flow through which the processing gas flowing from the introduction path 78 to the discharge path 79 passes. A path (not shown) is formed. Further, the outer surface of the liner 20 (that is, the surface facing the chamber bottom 62 and the chamber side 63) is roughened by blasting to exhibit a satin pattern.
[0040]
The light irradiation unit 5 shown in FIG. 1 includes a plurality of (25 in the present embodiment) xenon flash lamps (hereinafter simply referred to as “flash lamps”) 69 and a reflector 71. The plurality of flash lamps 69 are rod-shaped lamps each having a long cylindrical shape, and the longitudinal directions of the flash lamps 69 are arranged in a plane parallel to each other along the main surface of the substrate 9 held by the susceptor 7. . The reflector 71 is provided above the plurality of flash lamps 69 so as to cover the entire flash lamp 69, and the surface thereof is roughened by blasting to exhibit a satin pattern. In addition, a light diffusing plate 72 is provided between the light irradiating unit 5 and the translucent plate 61. The surface of quartz glass that transmits infrared rays is subjected to light diffusion processing.
[0041]
4 and 5 are diagrams showing a flow of the operation of the heat treatment apparatus 1 when the substrate 9 is heat treated. In the present embodiment, the substrate 9 is a semiconductor substrate to which impurities are added by an ion implantation method, and the impurities added by the heat treatment by the heat treatment apparatus 1 are activated.
[0042]
When the substrate 9 is heat-treated by the heat treatment apparatus 1, first, the susceptor 7 is disposed at a position close to the chamber bottom 62 as shown in FIG. Hereinafter, the positions of the susceptor 7 and the heater reflector 30 in FIG. 1 in the chamber 65 are referred to as “delivery positions”. When the susceptor 7 and the heater reflector 30 are in the delivery position, the tip of the support pin 70 passes through the susceptor 7 and the heater reflector 30 and is positioned above the susceptor 7. Next, the opening 66 is opened, and the substrate 9 is carried into the chamber 65 through the opening 66 by a transfer robot (not shown) controlled by the control unit 8 (step S11). Placed on.
[0043]
Thereafter, the opening 66 is closed by the gate valve 68 (step S12), the on-off valves 80 and 81 are opened, and normal temperature nitrogen gas is introduced into the chamber 65 (step S13). As shown in FIG. 6, the susceptor elevating mechanism 4 raises the susceptor 7 and the heater reflector 30 to a position close to the translucent plate 61 (step S <b> 14), and a labyrinth structure 60 is formed around the susceptor 7. At this time, the substrate 9 is passed from the support pins 70 to the susceptor 7 and is held by the susceptor 7. Then, heat treatment is performed in a state where the susceptor 7 and the heater reflector 30 are raised with respect to the chamber bottom 62. Hereinafter, the positions of the susceptor 7 and the heater reflector 30 in the chamber 65 shown in FIG. 6 are referred to as “processing positions”. The distance between the susceptor 7 and the translucent plate 61 can be arbitrarily adjusted by controlling the amount of rotation of the motor 40 of the susceptor elevating mechanism 4.
[0044]
The susceptor 7 is preheated to a predetermined temperature by a heater built in the heating plate 74, and the substrate 9 is preheated by contacting the susceptor 7 (more precisely, the heat diffusion plate 73) (step S15). The temperature of the substrate 9 gradually increases. At this time, since the heat energy from the heating plate 74 is diffused by the heat diffusion plate 73, the substrate 9 is uniformly preheated. Further, heat energy such as heat rays radiated from the susceptor 7 is reflected by the reflector cylindrical portion 31 on the outer periphery of the susceptor 7 and by the reflector bottom portion 32 on the bottom surface side of the susceptor 7, thereby suppressing heat conduction to the surroundings. Therefore, the heat energy from the susceptor 7 can be efficiently used for preheating the substrate 9.
[0045]
The surface temperature of the substrate 9 is continuously and indirectly measured by the temperature sensor in the heating plate 74 (step S16), and the measured temperature reaches a set preheating temperature (hereinafter referred to as “set temperature”). It is determined whether or not it has been done (step S17).
The set temperature is about 200 ° C. to 600 ° C., preferably about 350 ° C. to 550 ° C., in which impurities added to the substrate 9 are not likely to diffuse due to heat.
[0046]
When the surface temperature of the substrate 9 is lower than the set temperature, the process returns to step S15 and the preheating is continued, and the surface temperature of the substrate 9 is set by measuring and confirming the surface temperature of the substrate 9 (steps S15 and S16). It repeats until it becomes more than temperature (step S17). When the surface temperature is equal to or higher than the set temperature, flash light is emitted from the light irradiation unit 5 toward the substrate 9 under the control of the control unit 8 (step S18). At this time, a part of the light emitted from the flash lamp 69 of the light irradiation unit 5 passes through the light diffusing plate 72 and the light transmitting plate 61 and goes directly into the chamber 65, and the other part is temporarily reflected by the reflector 71. After being reflected, the light passes through the light diffusing plate 72 and the light transmitting plate 61 and travels into the chamber 65. By irradiation with these lights, the surface temperature of the substrate 9 is changed to be different from preheating. Heating to raise the processing temperature is referred to as “main heating”). Thus, the main heating is performed by light irradiation, whereby the surface temperature of the substrate 9 can be raised and lowered in a short time.
[0047]
The light irradiated from the light irradiation unit 5, that is, the flash lamp 69, is converted to a light pulse in which the electrostatic energy stored in advance is extremely short, and the irradiation time is about 0.1 to 10 milliseconds. The surface temperature of the substrate 9 which is a short and strong flash and is mainly heated by the light from the flash lamp 69 instantaneously rises to a processing temperature of about 1000 ° C. to 1100 ° C., and the impurities added to the substrate 9 are activated. Is done. At this time, since the surface temperature of the substrate 9 rises to the processing temperature in a very short time and rapidly decreases, diffusion of impurities added to the substrate 9 due to heat (this diffusion phenomenon is caused by the profile of the impurities in the substrate 9). Impurities can be activated while suppressing (also referred to as rounding).
[0048]
Further, by preheating the substrate 9 with the heating plate 74 before the main heating, the surface temperature of the substrate 9 can be quickly raised to the processing temperature by irradiation with light from the flash lamp 69.
[0049]
Even if light from the flash lamp 69 may enter the liner 20 during the main heating, the light is to some extent due to the outer surface of the liner 20 (surface facing the chamber body 6) roughened by blasting. Since it is blocked, it is possible to suppress a phenomenon in which the inner surface of the chamber body 6 is exposed to light and deteriorates or deteriorates.
[0050]
After the main heating is completed, the susceptor 7 and the heater reflector 30 are again lowered to the delivery position shown in FIG. 1 by the susceptor elevating mechanism 4 (step S19), and the substrate 9 is delivered from the susceptor 7 to the support pins 70. Subsequently, the on-off valves 80 and 81 are closed to stop the introduction of nitrogen gas (step S20), and the opening 66 closed by the gate valve 68 is opened (step S21). The substrate 9 placed on the support pins 70 is unloaded by the transfer robot (step S22), and a series of heat treatment operations by the heat treatment apparatus 1 is completed.
[0051]
By the way, in the heat treatment performed using a flash lamp, the surface temperature of the substrate is raised in a very short time by irradiation with light from the flash lamp, so the substrate is shattered by rapid thermal expansion of the surface irradiated with light. May break and scatter.
[0052]
In the heat treatment apparatus 1, as shown in FIG. 6, in a state where the susceptor 7 and the heater reflector 30 are raised with respect to the chamber bottom 62, that is, in a state where the susceptor 7 and the heater reflector 30 are disposed at the processing position, Since the labyrinth structure 60 is formed around the susceptor 7 and the substrate 9 in the chamber body 6 together with the reflector 30, even if the substrate 9 is cracked during the heat treatment, the scattered pieces of the substrate 9 are scattered by the labyrinth structure 60, It is restrained in a space (hereinafter referred to as “processing space”) 651 surrounded by the reflector bottom 32 and the translucent plate 61, and almost no debris is scattered outside.
[0053]
Specifically, the labyrinth structure 60 includes a liner cylindrical portion 27 disposed on the outer periphery of the susceptor 7, a liner ring portion 26 that extends outward from an end of the liner cylindrical portion 27 that is held by the susceptor 7 on the substrate 9 side, and a liner cylinder. The reflector cylindrical portion 31 that surrounds the outer periphery of the portion 27, and the reflector bottom portion 32 that extends inward from the end opposite to the liner ring portion 26 of the reflector cylindrical portion 31 are formed. The reflector cylindrical portion 31 is disposed with a predetermined gap from the liner ring portion 26, and the reflector bottom portion 32 is disposed with a predetermined gap from an end portion of the liner cylindrical portion 27 opposite to the liner ring portion 26.
[0054]
As described above, in the heat treatment apparatus 1, the labyrinth structure 60 is formed on the outer periphery of the susceptor 7 by the liner 20 and the heater reflector 30, so that the processing space 651 on the processing surface side of the substrate 9 becomes the other in the chamber 65. Even if the substrate 9 is separated from the space and the substrate 9 may be broken in the chamber 65, scattering of the fragments of the substrate can be suppressed with a simple structure. As a result, the heat treatment apparatus 1 can be restored only by cleaning the vicinity of the susceptor 7 without removing the susceptor 7 from the chamber body 6, reducing the downtime of the heat treatment process and improving the operating rate of the heat treatment apparatus 1. be able to.
[0055]
Further, since the reflector cylindrical portion 31 and the reflector bottom portion 32 can be separated, the corner portion of the heater reflector 30 (that is, the vicinity of the contact portion between the reflector cylindrical portion 31 and the reflector bottom portion 32) can be easily cleaned. .
[0056]
Further, since the liner 20 can be attached to and detached from the chamber body 6, when damage such as fragments of the substrate 9 scatters to the outside of the processing space 651 or when minor damage is repeated. Even if it exists, the liner 20 can be removed and it can clean easily. Moreover, since the protrusion part 28 shown in FIG. 3 is provided in the liner bottom part 24, even if it cleans without removing the liner 20, it can prevent that a fragment falls from the through-hole 21 or 22. FIG. In order to make cleaning of the liner 20 easier, it is preferable that the inner surface of the liner 20 (a surface other than the surface subjected to the blasting process described above) be smoothed.
[0057]
In the heat treatment apparatus 1, the temperature distribution of the substrate 9 varies due to the influence of the flow of nitrogen gas in the chamber 65 and the nonuniformity of the heat distribution in the chamber body 6 (specifically, the side of the introduction path 78 and the opening 66). However, the labyrinth structure 60 suppresses the flow of nitrogen gas in the processing space 651 (it can also be regarded as rectified). Variations in temperature distribution can be suppressed.
[0058]
Further, in the heat treatment apparatus 1, the labyrinth structure 60 is formed in the chamber 65 in a state where the heater reflector 30 is lifted together with the susceptor 7 and the heater reflector 30 is lifted from the chamber bottom 62 as shown in FIG. The structure of the device 1 can be simplified.
[0059]
As mentioned above, although embodiment of this invention has been described, this invention is not limited to the said embodiment, A various change is possible.
[0060]
For example, in the light irradiation unit 5, the number, arrangement, or shape of the flash lamps 69 is not limited to those shown in the above embodiment, and can be appropriately changed according to various conditions such as the size of the substrate 9 to be heat-treated. It is. Further, instead of the xenon flash lamp, a krypton flash lamp may be used, or another light source such as a halogen lamp that is not a flash lamp may be used. Furthermore, the main heating of the substrate 9 may be performed by a method other than the light irradiation, and the preliminary heating may be omitted. For example, a process involving heating may be performed only by the heating plate 74.
[0061]
In the heater reflector 30, the reflector cylindrical portion 31 and the reflector bottom portion 32 may be integrally formed. Further, when the thermal energy radiated downward from the susceptor 7 is within an allowable range, or when the lower surface of the susceptor 7 is covered with another member, the reflector bottom 32 may be omitted. Even when the reflector bottom portion 32 is omitted, a large piece of the substrate 9 can be kept inside the processing space 651 by the labyrinth structure 60 and the susceptor 7, and cleaning can be easily performed. Even if relatively small debris scatters from the gap between the susceptor 7 and the liner cylindrical portion 27 into the chamber 65 outside the processing space 651, the heat treatment apparatus 1 can be easily restored by cleaning the liner bottom 24 and the like. be able to.
[0062]
The labyrinth structure 60 does not necessarily need to be formed by the liner 20 and the heater reflector 30. For example, a cylindrical member suspended from the translucent plate 61 may be provided instead of the liner 20. Moreover, it replaces with the heater reflector 30, and other cyclic | annular members, such as a protection member which protects the heater reflector 30, may be utilized. Of course, an additional annular member may be provided as necessary to form the labyrinth structure.
[0063]
In the heat treatment apparatus 1, the substrate 9 may be subjected to various heating processes such as oxidation, annealing, and CVD in addition to the impurity activation process. The heat treatment apparatus 1 can be used not only for semiconductor substrates but also for heat treatment for glass substrates for flat panel display devices such as liquid crystal display devices and plasma display devices.
[0064]
【The invention's effect】
In the present invention, even if the substrate is cracked in the chamber body, scattering of the fragments of the substrate can be suppressed with a simple structure.
[0065]
In invention of Claim 2, the contact part vicinity of a cylinder part and a bottom part can be cleaned easily.
[0066]
In the inventions of claims 3, 7 and 9, the structure of the heat treatment apparatus can be simplified.
[0067]
In the invention of claim 6, the liner can be easily cleaned.
[0068]
In the invention of claim 11, the surface temperature of the substrate can be raised and lowered in a short time.
[Brief description of the drawings]
FIG. 1 is a diagram showing a configuration of a heat treatment apparatus according to an embodiment.
FIG. 2 is a perspective view showing a heater reflector.
FIG. 3 is a perspective view showing a liner.
FIG. 4 is a diagram showing an operation flow of the heat treatment apparatus.
FIG. 5 is a diagram showing a flow of operation of the heat treatment apparatus.
FIG. 6 is another diagram showing the configuration of the heat treatment apparatus.
[Explanation of symbols]
1 Heat treatment equipment
4 Susceptor lifting mechanism
5 Light irradiation part
6 Chamber body
7 Susceptor
9 Board
20 liner
26 Liner section
27 Liner cylinder
30 Heater reflector
31 Reflector cylindrical part
32 Reflector bottom
60 Labyrinth structure
62 Chamber bottom
65 chambers
69 Flash lamp
Steps S11 to S22

Claims (11)

A heat treatment apparatus for performing a treatment involving heating on a substrate,
A chamber body forming a space for processing a substrate;
A holding unit that heats the substrate while holding the substrate in the chamber body, and a heat reflecting unit that reflects at least the heat energy radiated from the holding unit on the outer periphery of the holding unit;
A heat treatment apparatus comprising: an annular portion disposed on an outer periphery of the holding portion and forming a labyrinth structure in the chamber body together with the heat reflecting portion. The heat treatment apparatus according to claim 1,
The heat reflecting portion is
A cylindrical portion surrounding the outer periphery of the holding portion;
An apparatus for heat treatment, comprising: a cylindrical portion that is detachably mounted; and a bottom portion that covers a surface opposite to a surface of the holding portion that holds the substrate. The heat treatment apparatus according to claim 1 or 2,
An elevating mechanism for elevating and lowering the holding unit relative to the bottom surface of the chamber body;
The heat treatment apparatus characterized in that the labyrinth structure is formed in a state in which the heat reflecting part moves up and down together with the holding part and the heat reflecting part rises with respect to the bottom surface. 4. The heat treatment apparatus according to claim 1, further comprising a light irradiation unit that irradiates the substrate with light and heats the substrate. A heat treatment apparatus for performing a treatment involving heating on a substrate,
A chamber body forming a space for processing a substrate;
A holding unit for holding a substrate in the chamber body;
A heating unit for heating the substrate held by the holding unit;
A liner surrounding the outer periphery of the holding portion;
And an annular portion that is disposed on an outer periphery of the holding portion and forms a labyrinth structure in the chamber body together with the liner. The heat treatment apparatus according to claim 5,
The heat treatment apparatus, wherein the liner is detachable from the chamber body. The heat treatment apparatus according to claim 5 or 6,
An elevating mechanism for elevating and lowering the holding unit relative to the bottom surface of the chamber body;
The heat treatment apparatus, wherein the labyrinth structure is formed in a state in which the annular portion is lifted and lowered together with the holding portion, and the annular portion is raised with respect to the bottom surface. A heat treatment apparatus for performing a treatment involving heating on a substrate,
A chamber body forming a space for processing a substrate;
A holding unit for holding a substrate in the chamber body;
A heating unit for heating the substrate held by the holding unit;
A first annular portion and a second annular portion forming a labyrinth structure on the outer periphery of the holding portion,
The first annular portion is
A first cylindrical portion surrounding the outer periphery of the holding portion;
A first support portion extending outward from an end portion on the substrate side held by the holding portion of the first cylindrical portion,
The second annular portion is
A second cylindrical portion that surrounds an outer periphery of the first cylindrical portion and is disposed with a predetermined gap from the first support portion;
A second support portion that extends inward from an end opposite to the first support portion of the second cylindrical portion and is disposed with a predetermined gap from the other end portion of the first cylindrical portion; The heat processing apparatus characterized by having. The heat treatment apparatus according to claim 8,
An elevating mechanism for elevating and lowering the holding unit relative to the bottom surface of the chamber body;
The heat treatment apparatus characterized in that the labyrinth structure is formed in a state in which the second annular part moves up and down together with the holding part and the second annular part rises with respect to the bottom surface. A heat treatment apparatus according to any one of claims 5 to 9,
The heat treatment apparatus, wherein the heating unit is a light irradiation unit that heats the substrate by irradiating the substrate with light. The heat treatment apparatus according to claim 4 or 10,
A heat treatment apparatus, wherein the light irradiation unit includes a flash lamp.

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