KR102461306B1 - Film forming apparatus and film forming method - Google Patents

Abstract

A resin layer is formed on the substrate with good film thickness distribution. In the film forming apparatus, the cooling stage has a support surface for supporting a substrate and a side portion continuous to the support surface, and is configured such that an outer peripheral end of the substrate supported on the support surface protrudes from the side portion. The deposition-preventing frame portion has an annular shape, is disposed so as to surround the side surface of the cooling stage, a recess is provided at a position opposite to the outer peripheral end of the substrate, and the side portion is surrounded by the recess. The gas supply unit supplies the raw material gas including the energy ray curing resin toward the support surface. The irradiation source is opposed to the support surface, and irradiates an energy ray for curing the energy ray cured resin toward the support surface. The vacuum chamber accommodates the cooling stage, the deposition-preventing frame part, the gas supply part, and the irradiation source.

Description

Film forming apparatus and film forming method

The present invention relates to a film forming apparatus and a film forming method.

When a resin layer is formed on a board|substrate by hardening|curing energy ray hardening resin, such as an ultraviolet curable resin, the following 2 processes are made typically. That is, the process of supporting the substrate by the cooling stage and supplying the raw material gas containing the resin onto the substrate supported on the cooling stage, and irradiating light such as ultraviolet rays on the substrate to form a cured resin layer on the substrate It is a process of forming

In particular, in recent years, the process of supplying the raw material gas on the substrate and the process of forming the cured resin layer on the substrate by ultraviolet rays or the like are performed in one vacuum chamber, without performing these plurality of processes in different vacuum chambers, respectively. A film forming apparatus is provided (for example, refer to Patent Document 1).

Japanese Patent Laid-Open No. 2013-064187

However, in the reduced pressure atmosphere, the source gas tends to adhere to the cooling stage corresponding to the narrow portion of the substrate (the front portion from the outer peripheral end of the substrate). When this raw material gas hardens and is thickly deposited on the resin layer, a phenomenon occurs in which the substrate is mounted on the resin layer. For this reason, the cooling effect of the substrate by the cooling stage is deteriorated, and the in-plane temperature distribution of the substrate does not become uniform, resulting in a situation in which a desired film thickness distribution cannot be obtained.

As a means to solve this, there is a method of mounting a deposition preventing plate surrounding the side surface of the cooling stage around the cooling stage. However, even if such a deposition-preventing plate is provided, a resin layer is deposited on the deposition-preventing plate in the narrow portion of the substrate, and eventually the same phenomenon may occur.

In view of the above circumstances, it is an object of the present invention to provide a film forming apparatus and a film forming method capable of forming a resin layer with good film thickness distribution on a substrate.

In order to achieve the above object, a film forming apparatus according to one embodiment of the present invention includes a cooling stage, a deposition-preventing frame portion, a gas supply portion, an irradiation source, and a vacuum chamber.

The cooling stage has a support surface for supporting the substrate and a side portion continuous to the support surface, and is configured such that an outer peripheral end of the substrate supported on the support surface protrudes from the side surface portion.

The deposition-preventing frame portion has an annular shape, is disposed so as to surround the side surface portion of the cooling stage, a recess is provided at a position opposite to the outer peripheral end of the substrate, and the side surface portion is formed by the recess surrounded

The gas supply unit supplies a source gas including an energy ray curing resin toward the support surface.

The irradiation source is opposed to the support surface, and irradiates an energy ray for curing the energy ray cured resin toward the support surface.

The vacuum chamber accommodates the cooling stage, the deposition prevention frame part, the gas supply part, and the irradiation source.

According to such a film forming apparatus, since the deposition-preventing frame portion is disposed so as to surround the side surface of the cooling stage, it becomes difficult to deposit the resin layer on the cooling stage. Further, since the deposition-preventing frame portion is provided with a recess at a position opposite to the outer peripheral end of the substrate, even if a resin layer is deposited on the deposition-proof frame portion, the resin layer does not reach the substrate and the substrate is less likely to be removed from the cooling stage. For this reason, the in-plane temperature distribution of the substrate becomes uniform, and the resin layer can be formed on the substrate with good film thickness distribution.

In the film forming apparatus, a first gap is provided between the side surface portion of the cooling stage and the deposition-preventing frame portion, a second gap is provided between the deposition-preventing frame portion and the substrate, and the cooling stage via the first gap A gas injection mechanism may be provided for injecting an inert gas from the second gap toward the side wall of the vacuum chamber.

According to such a film forming apparatus, the source gas is returned in the direction toward the side wall of the vacuum chamber from the stage by the inert gas injected from the first gap between the deposition-preventing frame portion and the substrate. For this reason, it becomes difficult to form a resin layer in a 1st clearance gap, and it becomes difficult for a board|substrate to detach|detach from a cooling stage more reliably.

In the film forming apparatus, the concave portion provided in the deposition preventing frame portion extends to a bottom surface portion and the bottom surface portion, and a side wall portion opposite to the side surface portion of the cooling stage extends to the bottom surface portion, and the bottom surface part and an outer peripheral part surrounding the side wall part, and a partition part facing the side wall part and enclosing the cooling stage is laid in the recess part, and the first gap is installed between the partition part and the side wall part ( A third gap is provided to close the gap, and a fourth gap is provided between the partition part and the substrate, and the gas injection mechanism passes through the first gap and passes through the second gap and the fourth gap. While injecting the said inert gas toward the said side wall of a vacuum chamber, you may inject the said inert gas toward the said side wall from the said 4th clearance gap via the said 3rd clearance gap.

According to such a film forming apparatus, an inert gas is introduced into not only the first gap but also the third gap. For this reason, it becomes difficult for the source gas to adhere to the side wall part which comprises a recessed part, and it becomes difficult to form a resin layer in the said side wall part. As a result, it becomes difficult for the board|substrate to come off from a cooling stage more reliably.

In the film forming apparatus, the width of the fourth gap may be wider than the width of the second gap.

According to this film forming apparatus, since the width of the fourth gap is wider than the width of the second gap, even if the resin layer is formed on the upper part of the partition, the resin layer is difficult to contact with the substrate. As a result, it becomes difficult for the board|substrate to come off from a cooling stage more reliably.

In the film forming apparatus, the support surface of the cooling stage has a rectangular shape, and the gas injection mechanism includes: a flow rate of the inert gas flowing through the third gap opposite to each part of the support surface; You may independently control the flow volume of the said inert gas which flows through the said 3rd clearance gap which opposes the edge part of the said support surface other than it.

According to such a film forming apparatus, even if the concentration of the source gas existing in the vicinity of each part of the cooling stage and the concentration of the source gas existing in the vicinity of the edge of the cooling stage are different, the third gap flows in each of the vicinity of each part and the vicinity of the edge. The flow rate of the inert gas can be controlled independently. For this reason, the thickness of the resin layer deposited on the recessed part in each of corner part vicinity and edge part vicinity can be controlled uniformly. As a result, it becomes difficult for the substrate to come off from the cooling stage more reliably.

In the film forming method according to one aspect of the present invention, the substrate is supported on the support surface of a cooling stage having a support surface for supporting the substrate and a side portion continuous to the support surface so that an outer peripheral end of the substrate protrudes from the side surface portion. .

An annular deposition-preventing frame portion surrounding the side surface of the cooling stage, a recess is provided at a position opposite to the outer peripheral end of the substrate, and the deposition-preventing frame portion surrounded by the recessed portion around the cooling stage is placed on

A source gas including an energy ray curing resin is supplied toward the substrate.

A resin layer is formed on the substrate by irradiating an energy ray for curing the energy ray curing resin toward the substrate.

According to this film-forming method, since the deposition-preventing frame portion is disposed so as to surround the side surface of the cooling stage, it becomes difficult to deposit the resin layer on the cooling stage. Further, since the deposition-preventing frame portion is provided with a recess at a position opposite to the outer periphery of the substrate, even if a resin layer is deposited on the deposition-preventing frame portion, the resin layer does not reach the substrate and the substrate is hardly detached from the cooling stage. For this reason, the in-plane temperature distribution of the substrate becomes uniform, and the resin layer can be formed on the substrate with good film thickness distribution.

As described above, according to the present invention, a film forming apparatus and a film forming method capable of forming a resin layer with good film thickness distribution on a substrate are provided.

1 is a schematic cross-sectional view of a film forming apparatus according to the present embodiment.
Fig. 2 (a) is a schematic plan view of the first region S1 of Fig. 1 viewed from the top in the vertical direction. Fig. (b) is a schematic cross-sectional view taken along line AA of Fig. (a).
3 : is a schematic diagram which shows the effect|action of this embodiment.
4 is a schematic cross-sectional view of a film forming apparatus according to Modification Example 1 of the present embodiment.
5 is a schematic cross-sectional view of a film forming apparatus according to Modification Example 2 of the present embodiment.
6 is a schematic plan view of a film forming apparatus according to Modification Example 3 of the present embodiment.
7 is a schematic cross-sectional view of a film forming apparatus according to Modification Example 4 of the present embodiment.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described, referring drawings. In each figure, XYZ axis coordinates may be introduced. For example, in the figure, an X-axis direction and a Y-axis direction represent mutually orthogonal directions, and these represent a horizontal direction in embodiment. The Z-axis direction indicates a direction orthogonal to the X-axis direction and the Y-axis direction, and indicates a vertical direction (gravity direction).

In addition, the same code|symbol may be attached|subjected to the same member or the member which has the same function, and after demonstrating the member, description may be abbreviate|omitted suitably.

(film forming device)

1 is a schematic cross-sectional view of a film forming apparatus according to the present embodiment. Fig. 2 (a) is a schematic plan view of the first region S1 of Fig. 1 in the vertical direction. Fig. 2(b) is a schematic cross-sectional view taken along the line A-A in Fig. 2(a).

The film forming apparatus 1 is a film forming apparatus for forming the ultraviolet curable resin layer which is an energy ray hardening resin on the board|substrate W. As shown in FIG. The film forming apparatus 1 includes a vacuum chamber 10 , a cooling stage 15 , a deposition-preventing frame unit 18 , a partition wall 16 , a gas supply unit 13 , an irradiation source 14 , and a gas supply line. (100) is provided. The substrate W is, for example, a glass substrate or a semiconductor substrate, and the planar shape may be, for example, a rectangle or a circle.

The vacuum chamber 10 is a vacuum container in which the atmosphere is at the upper part and the reduced pressure state can be maintained at the lower part. The vacuum chamber 10 has a first chamber body 11 and a second chamber body 12 disposed on the first chamber body 11 . The vacuum chamber 10 accommodates the cooling stage 15 , the deposition-preventing frame unit 18 , the gas supply unit 13 , the irradiation source 14 , and the partition wall 16 .

In the vacuum chamber 10 , the first chamber main body 11 and the second chamber main body 12 are partitioned by a partition wall 16 . The interior of the first chamber body 11 constitutes the first region S1 . The interior of the second chamber body 12 constitutes the second region S2.

In the first region S1 , the pressure is adjusted to a predetermined degree of vacuum by the vacuum exhaust system 19 . The degree of vacuum during pressure control is not particularly limited, but is generally set to 1×10 -3 Pa or more and 500 Pa or less. In addition, the gas supply unit 13 is disposed in the first region S1 . The second region S2 is maintained, for example, in an atmospheric atmosphere. The irradiation source 14 which is an ultraviolet light source is arrange|positioned in the 2nd area|region S2 so that the cooling stage 15 may be opposed.

The outer shape of the vacuum chamber 10 viewed from the Z-axis direction is designed to match the outer shape of the cooling stage 15 , for example. For example, the outer shape of the vacuum chamber 10 is rectangular. However, this external shape is not limited to a rectangle.

The cooling stage 15 is mounted on the first chamber body 11 through a seal mechanism (not shown) and is installed in the first region S1 . The cooling stage 15 has a substrate support 151 on which the substrate W is placed. In the cooling stage 15 , the substrate support 151 is disposed approximately in the center of the first region S1 , and has a support surface 151a for supporting the substrate W to be processed.

Although the shape in particular is not limited on the X-Y-axis plane orthogonal to the Z-axis direction, the support surface 151a has a rectangular shape. The cooling stage 15 has a side portion 151w continuous to the support surface 151a in addition to the support surface 151a. Further, the cooling stage 15 is configured such that, when the substrate W is supported by the support surface 151a, the outer peripheral end E of the substrate W protrudes from the side surface 151w. In other words, the area of the support surface 151a is smaller than the area of the substrate W.

Further, the substrate support 151 incorporates a cooling mechanism (temperature: -30°C or higher and 0°C or lower) for cooling the substrate W to a predetermined temperature. For this reason, the substrate W is cooled to a predetermined temperature by the cooling stage 15 , and the ultraviolet curing resin in the raw material gas is cooled and condensed on the substrate W. As a result, it becomes possible to form an ultraviolet curable resin layer on the board|substrate W. In order to form an ultraviolet curable resin layer having a uniform film thickness on the substrate W, it is preferable that the temperature distribution in the plane of the substrate W when supported by the cooling stage 15 is not as irregular as possible.

In addition, the cooling stage 15 may raise/lower the board|substrate supporter 151 in the Z-axis direction by a drive mechanism (not shown). Moreover, the cooling stage 15 may be equipped with the rotation mechanism which rotates the support surface 151a within an X-Y-axis plane.

The deposition-preventing frame portion 18 is disposed to surround the side portion 151w of the cooling stage 15 . That is, the deposition-preventing frame portion 18 is an annular member in the X-Y axis plane. The outer shape of the deposition-preventing frame portion 18 in the X-Y axis plane is, for example, a rectangle. The deposition-preventing frame portion 18 is provided with a recessed portion 18h at a position opposite to the outer peripheral end E of the substrate W. As shown in FIG. The recessed part 18h is comprised by the bottom surface part 181b, the side wall part 181w, and the outer peripheral part 181e.

The bottom portion 181b is a base portion in the recess 18h. The side wall portion 181w is a partition portion extending to the bottom surface portion 181b and opposing the side surface portion 151w of the cooling stage 15 . The outer peripheral portion 181e is a thick portion extending to the bottom surface portion 181b and surrounding the bottom surface portion 181b and the side wall portion 181w. Since the deposition-preventing frame portion 18 is annular in the X-Y axis plane, the recessed portion 18h is also constituted in an annular shape in the X-Y axis plane. For this reason, the side part 151w of the cooling stage 15 becomes the structure surrounded by the recessed part 18h.

In addition, the deposition-preventing frame portion 18 and the side surface portion 151w of the cooling stage 15 are not in close contact, and between the side surface portion 151w of the cooling stage 15 and the deposition-preventing frame portion 18 (side wall portion 181w) A first gap C1 having a gap width of 0.01 mm or more and 0.5 mm or less is provided, for example. The deposition-preventing frame portion 18 and the substrate W are not in close contact, and between the deposition-preventing frame portion 18 (side wall portion 181w) and the substrate W, for example, the gap width is 0.01 mm or more and 0.2 mm or less. A second gap C2 is provided. The second gap C2 communicates with the first gap C1 . In addition, the second gap C2 may be a height difference between the side wall portion 181w and the support surface 151a.

The outline member 20 is disposed to surround the cooling stage 15 and the deposition-preventing frame unit 18 . That is, the outline member 20 has an annular shape in the X-Y axis plane. The outline of the outline member 20 in the X-Y axis plane is, for example, a rectangle. An exhaust groove 201 surrounding the cooling stage 15 and the deposition-preventing frame 18 is provided in the outline member 20 . The exhaust groove 201 communicates with the first region S1 and sucks the gas present in the first region S1 . Then, the gas existing in the first region S1 is exhausted out of the vacuum chamber 10 via the exhaust groove 201 by the vacuum exhaust system 19 .

The gas supply unit 13 is connected to the gas supply line 100 for generating a raw material gas including an ultraviolet curable resin. The gas supply part 13 has a plurality of branch pipe parts 131 . The gas supply unit 13 may be a shower plate to be described later. The irradiation source 14 irradiates ultraviolet rays (UV), which are energy rays, toward the support surface 151a. For this reason, the ultraviolet curable resin applied on the substrate W is cured. The irradiation source 14 is arranged in the second area (S2). The reflecting plate 17 efficiently condenses the ultraviolet rays (UV) irradiated from the irradiation source 14 to the substrate W.

The partition wall 16 is positioned between the first chamber body 11 and the second chamber body 12 . The partition wall 16 partitions the inside of the vacuum chamber 10 and has a plate-shaped structure including an X-Y-axis plane orthogonal to a Z-axis direction. The barrier rib 16 has a transmission portion 161 that transmits ultraviolet (UV) light. The transmission part 161 may be the whole or a part of the partition 16. As shown in FIG. The transmission part 161 is comprised by the rectangular-shaped window part provided in four places, for example. In addition, the material constituting the transmission portion 161 is not particularly limited as long as it is a material that transmits ultraviolet (UV) light, and for example, quartz glass is employed. While blocking the atmosphere of the first region S1 and the second region S2 by the barrier rib 16 , the ultraviolet rays (UV) irradiated from the irradiation source 14 can be transmitted.

As the ultraviolet curing resin material, for example, an acrylic resin can be used. In addition, it is also possible to use the resin by adding a polymerization initiator or the like. The raw material gas containing such a resin is generated by the gas supply line 100 installed outside the vacuum chamber 10 . The gas supply line 100 is connected to the gas supply unit 13 , and the raw material gas containing the resin is supplied into the vacuum chamber 10 .

The gas supply line 100 has a resin material supply line 110 , a vaporizer 120 , and a pipe 130 .

The resin material supply line 110 is composed of a tank 111 filled with a liquid resin material, and a pipe 112 for transporting the resin material from the tank 111 to the vaporizer 120 . As a method of conveying the resin material from the tank 111 to the vaporizer 120, for example, a method using a carrier gas made of an inert gas is exemplified. It is also possible to attach a valve V1 or a liquid flow controller (not shown) to the pipe 112 .

One end of the pipe 112 is disposed inside the vaporizer 120 . The vaporizer 120 generates a source gas by generating a mist of the resin material conveyed in the pipe 112 . Here, generating a mist of the resin material is used in the meaning of vaporizing the resin material. The vaporizer 120 is configured to be capable of maintaining the vaporized state of the resin material by being heated by a heating mechanism (not shown).

The vaporizer 120 is connected to the pipe 130 . The source gas generated by the vaporizer 120 is supplied to the gas supply unit 13 through the pipe 130 . At this time, it is also possible to mount the valve V2 on the pipe 130 and control the inflow of gas into the gas supply unit 13 . In addition, by attaching a flow controller (not shown), it is also possible to control the flow rate of the gas flowing into the gas supply unit 13 . In addition, the pipe 130 is also heated to a temperature capable of maintaining the vaporized state of the raw material gas by a heating mechanism (not shown).

(Method of film formation)

The film-forming method using the film-forming apparatus 1 mainly has the following 2 processes. That is, the process of forming an ultraviolet curable resin layer on the substrate W by supplying a raw material gas containing an ultraviolet curable resin from the gas supply unit 13 to the substrate W, and the ultraviolet (UV) light from the irradiation source 14 ), there is a step of curing the UV curable resin layer by irradiating it.

(Formation process of UV curing resin layer)

First, as shown in FIG. 1 , the substrate W is disposed on the support surface 151a. Here, the support surface 151a supports the substrate W so that the outer peripheral end E of the substrate W protrudes from the side portion 151w. Further, an annular deposition-preventing frame portion 18 is disposed around the cooling stage 15 .

Next, the pressure in the first region S1 is adjusted to a predetermined degree of vacuum by the evacuation system 19 . Here, a mask or the like capable of shielding the non-film-forming portion may be disposed on the substrate W, whereby pattern formation of the ultraviolet curable resin layer can be easily performed.

The gas supply line 100 generates a raw material gas from a resin material, and supplies the raw material gas into the vacuum chamber 10 through the gas supply unit 13 . The vaporizer 120 vaporizes the resin material and generates a raw material gas containing an ultraviolet curable resin. The generated source gas is supplied to the gas supply unit 13 through the pipe 130 , and the source gas is discharged from the gas supply unit 13 toward the substrate W . When the raw material gas reaches the substrate W, the resin in the raw material gas is condensed on the substrate W to form an ultraviolet curable resin layer.

(curing process of UV curing resin layer)

Next, in a state in which the first chamber body 11 is maintained at a predetermined degree of vacuum, the ultraviolet curing resin layer is cured by irradiating ultraviolet rays (UV) on the substrate W from the irradiation source 14 . Ultraviolet (UV) radiation irradiated from the irradiation source 14 passes through the transmission portion 161 of the barrier rib 16 . Ultraviolet (UV) light passing through the transmission part 161 is irradiated onto the substrate W through the gap between the branch pipe parts 131 . In addition, a portion of UV rays irradiated in the sidewall direction of the second chamber body 12 are reflected by the reflecting plate 17 and condensed onto the substrate W disposed on the support surface 151a.

Since the gas supply part 13 is composed of a plurality of branch pipe parts 131 arranged at intervals from each other, it is possible to reach the UV rays irradiated from the irradiation source 14 on the substrate W without shielding them. becomes For this reason, the ultraviolet curable resin layer can be hardened|cured efficiently.

(Action)

3 : is a schematic diagram which shows the effect|action of this embodiment.

As shown in FIG. 3 , the ultraviolet curable resin layer 30 formed by irradiation with ultraviolet (UV) light is deposited on the deposition-preventing frame portion 18 disposed on the outer periphery of the substrate W as well as on the substrate W. do. In particular, as the continuous film formation is continued, the deposition of the ultraviolet curable resin layer 30 becomes more remarkable.

In this case, the periphery of the cooling stage 15 is surrounded by the deposition-preventing frame portion 18 in which the recess 18h is formed, so that in the vicinity of the outer periphery of the substrate W, the height of the cooling stage 15 and the deposition-preventing frame portion 18 is offset occurs, and the deposition of the ultraviolet curable resin layer 30 on the side surface portion 151w is suppressed (FIG. 3).

If there is no recess 18h, the outer periphery of the substrate W is caused by a transfer misalignment of the substrate W (irregularity of the support position when the substrate W is mounted on the support surface 151a). Under the stage W, the ultraviolet curing resin layer 30 is deposited. When the UV curable resin layer 30 is deposited under the outer peripheral end W of the substrate W, the substrate W is mounted on the UV curable resin layer 30 and the substrate W is separated from the support surface 151a. this happens

When this phenomenon occurs, the substrate W is separated from the support surface 151a, and the cooling efficiency by the cooling stage 15 is reduced. For this reason, the in-plane temperature distribution of the board|substrate W becomes non-uniform|heterogenous, and the film thickness distribution of the ultraviolet curable resin layer 30 formed on the board|substrate W will become non-uniform|heterogenous.

However, as in this embodiment, by forming the recessed portion 18h in the deposition-preventing frame portion 18, the substrate W is mounted on the ultraviolet curing resin layer 30, thereby suppressing the phenomenon of falling from the support surface 151a, The substrate W is in contact with the entire surface of the support surface 151a. For this reason, the in-plane temperature distribution of the substrate W becomes uniform by the cooling effect of the cooling stage 15 . As a result, the ultraviolet curable resin layer 30 is formed on the substrate W with a good film thickness distribution.

However, since the second gap C2 is not blocked, there is a possibility that the ultraviolet curing resin layer 30 is deposited in the second gap C2 during long-time driving.

(Modification 1)

The phenomenon that may occur above is solved by Modification Example 1.

4 is a schematic cross-sectional view of a film forming apparatus according to Modification Example 1 of the present embodiment. Fig. 4 corresponds to a cross-sectional view taken along the line A-A in Fig. 2A.

As shown in FIG. 4 , the cooling stage 15 has a gas injection mechanism ( 153) is installed. The inert gas G is, for example, N2, Ar, or the like. The gas injection mechanism 153 includes, for example, a gas introduction pipe 153a installed on the cooling stage 15 , a flow path 153b communicating with the first gap C1 , and a first gap C1 , , constituted by the second gap C2. The flow path 153b is installed in the gas introduction pipe 153a and in the cooling stage 15 . The gas introduction pipe 153a and the flow path 153b are not specifically limited, For example, you may arrange|position in multiple numbers along the 1st clearance gap C1. In addition, all the flow rates of the inert gas G introduce|transduced into the flowing 1st area|region S1 are 0.01 slm or more and 1 slm or less, for example.

When the inert gas G is injected toward the side wall of the vacuum chamber 10 from the second gap C2 by the gas injection mechanism 153 , the inert gas G is sucked by the exhaust groove 201 and vacuum It is exhausted out of the vacuum chamber 10 by the exhaust system 19 . That is, in the outer periphery of the cooling stage 15, the airflow of the inert gas G toward the side wall of the vacuum chamber 10 from the 2nd clearance gap C2 is formed.

For this reason, the raw material gas which exists in the vicinity of the recessed part 18h returns toward the side wall of the vacuum chamber 10 from the cooling stage 15 with the inert gas G. Therefore, the raw material gas hardly enters the first gap C1, and it becomes more difficult to form the ultraviolet curable resin layer 30 in the first gap C1. As a result, the phenomenon that the substrate W is mounted on the ultraviolet curing resin layer 30 is more reliably prevented, and the substrate W is less likely to be separated from the cooling stage 15 .

However, in the configuration of the first modification, the formation of the ultraviolet curable resin layer 30 in the first gap C1 is prevented, but in the recessed portion 18h, the ultraviolet curable resin layer 30 is deposited on the side wall portion 181w. This phenomenon may occur (FIG. 3). This is because, in the reduced pressure atmosphere, as the inert gas G moves away from the first gap C1, the concentration of the inert gas G becomes thinner, and the effect of repulsing the source gas becomes weaker. If the ultraviolet curable resin layer 30 deposited on the side wall portion 181w continues to grow, there is a possibility that the substrate W is lifted by the ultraviolet curable resin layer 30 . In particular, the growth of the ultraviolet curable resin layer 30 on the side wall portion 181w becomes remarkable when continuous film formation over a long period of time is attempted.

(Modified example 2)

The phenomenon that may occur in Modification Example 1 is solved by Modification Example 2.

5A and 5B are schematic cross-sectional views of a film forming apparatus according to Modification Example 2 of the present embodiment. Fig. 5(a) corresponds to a cross-sectional view taken along the line A-A in Fig. 2(a). Fig. 5 (b) is an enlarged view of Fig. 5 (a).

As shown to Fig.5 (a), the partition part 181p which opposes the side wall part 181w in the recessed part 18h is laid in the deposition-proof frame part 18. As shown in FIG. The partition portion 181p has an annular shape and surrounds the cooling stage 15 . A third gap C3 parallel to the first gap C1 is provided between the partition portion 181p and the side wall portion 181w. The gap width of the third gap C3 is 0.01 mm or more and 0.5 mm or less.

A fourth gap C4 communicating with the second gap C2 and the third gap C3 is provided between the partition portion 181p and the substrate W. As shown in FIG. The flow path 153b communicates with the third gap C3 as well as the first gap C1. In other words, the downstream of the flow path 153b is divided into two by the first gap C1 and the third gap C3 . In addition, the width of the fourth gap C4 is wider than the width of the second gap C2 . In addition, the fourth gap C4 is also a height difference between the partition portion 181p and the support surface 151a. The gap width of the fourth gap C4 is 0.01 mm or more and 1 mm or less.

The gas injection mechanism 153 communicates with the gas introduction pipe 153a, the flow path 153b, the first clearance gap C1, the second clearance gap C2, and the flow path 153b, for example. It is constituted by the gap C3 and the fourth gap. The gas injection mechanism 153 injects the inert gas G toward the sidewall of the vacuum chamber 10 from the second gap C2 and the fourth gap C4 via the first gap C1 and at the same time , the inert gas G is injected toward the sidewall from the fourth gap C4 via the third gap C3 .

delete

According to this configuration, an inert gas is introduced into not only the first gap C1 but also the third gap C3. For this reason, it becomes difficult for the source gas to adhere to the side wall portion 181w constituting the recessed portion 18h, and it is difficult to form the ultraviolet curable resin layer 30 on the side wall portion 181w. In addition, since the gap width of the fourth gap C4 is configured to be wider than the gap width of the second gap C2, as shown in FIG. 5(b), an ultraviolet curable resin layer ( Even if 30) is formed, the UV-curable resin layer 30 becomes difficult to contact the substrate W as the gap distance increases. As a result, it becomes difficult for the board|substrate W to come off from the support surface 151a more reliably.

In addition, when the tapered portion 181t is provided at the upper angle of the partition portion 181p on the opposite side to the side wall portion 181w, the UV curable resin layer 30 delays the time in contact with the substrate W. The effect increases. As a result, it becomes difficult for the board|substrate W to come off from the support surface 151a more reliably.

(Modified example 3)

6 is a schematic plan view of a film forming apparatus according to Modification Example 3 of the present embodiment. Fig. 6 shows a plane in which the first region S1 is viewed from the top in the vertical direction.

In the third modification, the flow rate of the inert gas G flowing through the third gap C3 in which the gas injection mechanism 153 opposes the leg parts 151c of the support surface 151a, and the leg parts 151c The flow rate of the inert gas G which flows through the 3rd clearance gap C3 which opposes the edge part 151s of the other support surface 151a is controlled independently. In this case, in the gas injection mechanism 153 illustrated in FIG. 5 , the flow rate of the inert gas G flowing through the first gap C1 opposed to the corner portion 151c and the first gap opposed to the edge portion 151s The flow rate of the inert gas G flowing through (C1) is controlled independently.

Accordingly, in the fourth gap C4, the flow rate of the inert gas G injected from the fourth gap C4 opposed to the corner portion 151c and the fourth gap C4 opposed to the edge portion 151s The flow rate of the inert gas (G) injected from the is independently controlled.

For this reason, even if there is a difference in the concentration of the source gas in the vicinity of the support surface 151a, the source gas at the flow rate of the inert gas G according to the concentration of each region in the vicinity is transferred to the vacuum chamber in the cooling stage 15 . Return towards the sidewall of (10). As a result, the phenomenon in which the ultraviolet curable resin layer 30 is preferentially deposited on the recessed part 18h near the corner part 151c compared to the recessed part 18h near the edge part 151s is avoided.

(Modification 4)

7 is a schematic cross-sectional view of a film forming apparatus according to Modification Example 4 of the present embodiment.

A plurality of branch pipe portions may be replaced with a shower plate. The gas supply 13B has a shower plate 1332 and a space 1330 . The shower plate part 1332 is disposed between the partition wall 16 and the support surface 151a, has a plurality of gas supply holes 1331 penetrating in the thickness direction, and constitutes a plate-shaped shower plate having UV transmittance as a whole. do. The space portion 1330 is a space formed by a gap between the partition wall 16 and the shower plate portion 1332 , and is partitioned by these and the first chamber body 11 .

As mentioned above, although embodiment of this invention was described, this invention is not limited only to embodiment mentioned above, It goes without saying that various changes can be added. Each embodiment is not limited to an independent form, and can be combined without limitation technically.

1: film forming device
10: vacuum chamber
11: first chamber body
11c: Legs
12: second chamber body
13, 13B: gas supply
14: Researcher
15: cooling stage
16: bulkhead
17: reflector
18: anti-corrosion frame unit
19: vacuum exhaust system
20: no outline
30: UV curing resin layer
100: gas supply line
110: resin material supply line
111: tank
112: plumbing
120: carburetor
130: plumbing
131: branch piping
151: substrate support
151a: support surface
151w: side
151s: edge
151c: parts
153: gas injection mechanism
153a: gas inlet pipe
153b: Euro
161: transmission part
18h: Yobu
181e: outsider
181b: bottom part
181w: side wall
181p: partition
181t: tapered part
201: exhaust groove
1330: space part
1331: gas supply hole
1332: shower plate part
V1, V2: valve
C1: first gap
C2: second gap
C3: third gap
C4: fourth gap
S1: first area
S2: second area
W: substrate
E: outer perimeter

Claims (6)

a cooling stage having a support surface for supporting a substrate and a side portion continuous to the support surface, the cooling stage configured such that an outer peripheral end of the substrate supported on the support surface protrudes from the side portion;
An annular deposition-preventing frame portion disposed to surround the side surface of the cooling stage, a recess is provided at a position opposite to the outer peripheral end of the substrate, and the side portion is surrounded by the recess;
a gas supply unit for supplying a raw material gas containing an energy ray curing resin toward the support surface;
an irradiation source facing the support surface and irradiating an energy ray for curing the energy ray cured resin toward the support surface;
a vacuum chamber accommodating the cooling stage, the deposition prevention frame portion, the gas supply portion, and the irradiation source;
and a first gap provided between the side surface of the cooling stage and the deposition-preventing frame.
According to claim 1,
A second gap is installed between the deposition-preventing frame portion and the substrate,
The cooling stage is provided with a gas injection mechanism for injecting an inert gas from the second gap toward the side wall of the vacuum chamber via the first gap.
filming device.
3. The method of claim 2,
The main part installed in the deposition-preventing frame part,
the underside,
a side wall portion extending to the bottom surface portion and opposing the side surface portion of the cooling stage;
An outer peripheral portion extending to the bottom surface portion and enclosing the bottom surface portion and the side wall portion
is composed by
A partition part facing the side wall part and enclosing the cooling stage is installed on the recessed part,
A third gap juxtaposed with the first gap is installed between the partition part and the side wall part,
A fourth gap is provided between the partition part and the substrate,
The gas injection mechanism injects the inert gas from the second gap and the fourth gap toward the side wall of the vacuum chamber via the first gap and passes through the third gap to the fourth gap. to inject the inert gas toward the sidewall in
filming device.
4. The method of claim 3,
A width of the fourth gap is wider than a width of the second gap
filming device.
5. The method of claim 3 or 4,
the support surface of the cooling stage is rectangular;
The gas injection mechanism,
Independently controlling the flow rate of the inert gas flowing through the third gap facing each part of the support surface and the flow rate of the inert gas flowing through the third gap facing the edge of the support surface other than the corner part
filming device.
Supporting the substrate such that an outer peripheral end of the substrate protrudes from the side portion on the support surface of a cooling stage having a support surface for supporting the substrate and a side portion continuous to the support surface,
In the annular deposition-preventing frame portion surrounding the side surface portion of the cooling stage, a recess is provided at a position opposite to the outer peripheral end of the substrate, and the deposition-preventing frame portion surrounded by the recessed portion around the cooling stage placed in
Supplying a raw material gas containing an energy ray curing resin toward the substrate,
By irradiating an energy ray for curing the energy ray cured resin toward the substrate, a resin layer is formed on the substrate,
A first gap is installed between the side portion of the cooling stage and the deposition-preventing frame portion
film formation method.

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