CN112334595A - Film forming apparatus and film forming method - Google Patents
Film forming apparatus and film forming method Download PDFInfo
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- CN112334595A CN112334595A CN201980043138.0A CN201980043138A CN112334595A CN 112334595 A CN112334595 A CN 112334595A CN 201980043138 A CN201980043138 A CN 201980043138A CN 112334595 A CN112334595 A CN 112334595A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
- B05C11/10—Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C9/00—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important
- B05C9/08—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation
- B05C9/12—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying liquid or other fluent material and performing an auxiliary operation the auxiliary operation being performed after the application
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/60—Deposition of organic layers from vapour phase
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
- B05D3/061—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation using U.V.
- B05D3/065—After-treatment
- B05D3/067—Curing or cross-linking the coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
Abstract
The invention provides a film forming apparatus for forming a resin layer on a substrate with a good film thickness distribution. In the film forming apparatus, the cooling table has a support surface for supporting the substrate and a side surface portion continuous to the support surface, and an outer peripheral end of the substrate supported by the support surface is configured to protrude from the side surface portion. The adhesion preventing frame portion is annular and is arranged to surround a side surface portion of the cooling stage, and a recess portion is provided at a position facing the outer peripheral end of the substrate, and the side surface portion is surrounded by the recess portion. The gas supply unit supplies a raw material gas containing an energy beam-curable resin to the support surface. The radiation source is opposed to the support surface, and irradiates the support surface with an energy beam for curing the energy beam-curable resin. The vacuum tank accommodates a cooling stage, an adhesion preventing frame, a gas supply unit, and an irradiation source.
Description
Technical Field
The present invention relates to a film forming apparatus and a film forming method.
Background
When an energy beam-curable resin such as an ultraviolet-curable resin is cured to form a resin layer on a substrate, the following two steps are typically performed. That is, the method includes a step of supporting the substrate on the cooling stage and supplying a raw material gas containing the resin onto the substrate supported on the cooling stage, and a step of irradiating the substrate with light such as ultraviolet rays to form a cured resin layer on the substrate.
In particular, recently, a film deposition apparatus has been provided in which a step of supplying a raw material gas onto a substrate and a step of forming a cured resin layer on the substrate by ultraviolet rays or the like are performed in 1 vacuum chamber, instead of performing such a plurality of steps in each of independent vacuum chambers (for example, see patent document 1).
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2013-064187.
Disclosure of Invention
Problems to be solved by the invention
However, in a reduced-pressure environment, the raw material gas tends to adhere to the cooling stage corresponding to the rib portion of the substrate (the tip portion beyond the outer peripheral end of the substrate). When the raw material gas is solidified and thickly deposited as a resin layer, a phenomenon occurs in which the substrate is lifted up on the resin layer. This reduces the cooling effect of the substrate by the cooling stage, and the in-plane temperature distribution of the substrate is not uniform, and a desired film thickness distribution cannot be obtained.
As a means for solving this problem, there is a method of attaching an adhesion preventing plate surrounding the side surface portion of the cooling table around the cooling table. However, even if such an anti-adhesion plate is provided, the resin layer is deposited on the anti-adhesion plate in the substrate rib portion, and finally the same phenomenon occurs.
In view of the above, an object of the present invention is to provide a film forming apparatus and a film forming method capable of forming a resin layer on a substrate with a good film thickness distribution.
Means for solving the problems
In order to achieve the above object, a film forming apparatus according to an aspect of the present invention includes: a cooling stage, an adhesion prevention frame, a gas supply section, an irradiation source, and a vacuum vessel.
The cooling stage has a support surface for supporting a substrate and a side surface portion continuous to the support surface, and the outer peripheral end of the substrate supported by the support surface is configured to protrude from the side surface portion.
The adhesion preventing frame portion is annular, is disposed so as to surround the side surface portion of the cooling stage, and has a recessed portion provided at a position facing the outer peripheral end of the substrate, and the side surface portion is surrounded by the recessed portion.
The gas supply unit supplies a source gas containing an energy beam-curable resin to the support surface.
The radiation source is opposed to the support surface, and radiates an energy beam for curing the energy beam-curable resin to the support surface.
The vacuum tank accommodates the cooling stage, the adhesion preventing frame, the gas supply unit, and the irradiation source.
According to such a film forming apparatus, since the adhesion preventing frame portion is disposed so as to surround the side surface portion of the cooling stage, the resin layer is less likely to be deposited on the cooling stage. Further, since the recessed portion is provided at a position of the adhesion preventing frame portion facing the outer peripheral end of the substrate, even if the resin layer is deposited on the adhesion preventing frame portion, the resin layer cannot reach the substrate, and the substrate is less likely to be separated from the cooling stage. This makes the in-plane temperature distribution of the substrate uniform, and the resin layer can be formed on the substrate with a good film thickness distribution.
In the film forming apparatus, the following may be used:
a first gap is provided between the side surface portion of the cooling table and the adhesion preventing frame portion,
a second gap is provided between the adhesion preventing frame and the substrate,
the cooling stage is provided with a gas injection mechanism for injecting an inert gas from the second gap to the sidewall of the vacuum chamber through the first gap.
According to such a film deposition apparatus, the source gas is pushed back from the stage toward the side wall of the vacuum chamber by the inert gas injected from the first gap between the adhesion preventing frame portion and the substrate. This makes it difficult to form a resin layer in the first gap, and more reliably, makes it difficult to separate the substrate from the cooling stage.
In the film forming apparatus, the following may be used:
the concave portion provided in the adhesion prevention frame portion is composed of a bottom surface portion, a side wall portion, and an outer peripheral portion,
the side wall part is provided continuously with the bottom surface part and faces the side surface part of the cooling table,
the outer peripheral portion is provided so as to be continuous with the bottom surface portion and surround the bottom surface portion and the side wall portion,
a partition plate portion facing the side wall portion and surrounding the cooling stage is provided in the recessed portion,
a third gap arranged in parallel with the first gap is provided between the partition plate portion and the side wall portion,
a fourth gap is provided between the partition portion and the substrate,
the gas injection mechanism injects the inert gas from the second gap and the fourth gap to the sidewall of the vacuum chamber through the first gap, and injects the inert gas from the fourth gap to the sidewall through the third gap.
According to such a film formation apparatus, the inert gas is introduced not only into the first gap but also into the third gap. This makes it difficult for the raw material gas to adhere to the side wall portion constituting the recess, and for the side wall portion to form a resin layer. As a result, the substrate is more reliably prevented from being separated from the cooling stage.
In the film forming apparatus, the width of the fourth gap may be larger than the width of the second gap.
According to the film forming apparatus, since the fourth gap is formed to have a width larger than that of the second gap, even if the resin layer is formed on the upper portion of the partition portion, the resin layer hardly reaches the substrate. As a result, the substrate is more reliably prevented from being separated from the cooling stage.
In the film forming apparatus, it is also possible that,
the support surface of the cooling table is rectangular,
the gas injection mechanism controls independently a flow rate of the inert gas flowing through the third gap facing a corner portion of the support surface and a flow rate of the inert gas flowing through the third gap facing a side portion of the support surface other than the corner portion.
According to such a film deposition apparatus, even if the concentration of the source gas present in the vicinity of the corner portion of the cooling stage is different from the concentration of the source gas present in the vicinity of the side portion of the cooling stage, the flow rates of the inert gas flowing through the third gaps located in the vicinity of the corner portion and the vicinity of the side portion can be independently controlled. This makes it possible to uniformly control the thickness of the resin layer deposited in the recesses located near the corner portions and near the side portions. As a result, the substrate is more reliably prevented from being separated from the cooling stage.
In a film forming method according to an aspect of the present invention, the substrate is supported on a support surface of a cooling stage having a support surface for supporting the substrate and a side surface portion continuous to the support surface such that an outer peripheral end of the substrate protrudes from the side surface portion.
An annular adhesion preventing frame portion surrounds the side surface portion of the cooling stage, a recess portion is provided in the adhesion preventing frame portion at a position facing the outer peripheral end of the substrate, and the adhesion preventing frame portion surrounding the side surface portion by the recess portion is disposed around the cooling stage.
A raw material gas containing an energy beam curable resin is supplied to the substrate.
And irradiating the substrate with an energy beam for curing the energy beam-curable resin to form a resin layer on the substrate.
According to such a film forming method, since the adhesion preventing frame portion is disposed so as to surround the side surface portion of the cooling stage, the resin layer is less likely to be deposited on the cooling stage. Further, since the recessed portion is provided at a position of the adhesion preventing frame portion facing the outer peripheral end of the substrate, even if the resin layer is deposited on the adhesion preventing frame portion, the resin layer does not reach the substrate, and the substrate is less likely to be separated from the cooling stage. This makes the in-plane temperature distribution of the substrate uniform, and the resin layer can be formed on the substrate with a good film thickness distribution.
Effects of the invention
As described above, the present invention provides a film forming apparatus and a film forming method capable of forming a resin layer on a substrate with a good film thickness distribution.
Drawings
Fig. 1 is a schematic cross-sectional view of a film deposition apparatus according to the present embodiment.
In fig. 2, fig. (a) is a schematic plan view of the first region S1 in the vertical plan view of fig. 1; FIG. (b) is a schematic sectional view taken along line A-A of FIG. (a).
Fig. 3 is a schematic diagram showing the operation of the present embodiment.
Fig. 4 is a schematic cross-sectional view of a film deposition apparatus according to a modification of the present embodiment.
Fig. 5 is a schematic cross-sectional view of a film deposition apparatus according to a second modification of the present embodiment.
Fig. 6 is a schematic plan view of a film deposition apparatus according to a third modification of the present embodiment.
Fig. 7 is a schematic cross-sectional view of a film deposition apparatus according to a fourth modification of the present embodiment.
Detailed Description
Hereinafter, embodiments of the present invention will be described with reference to the drawings. In each drawing, XYZ coordinate axes are introduced. For example, the X-axis direction and the Y-axis direction in the drawing indicate mutually perpendicular directions, and they indicate a horizontal direction in the embodiment. The Z-axis direction indicates a direction perpendicular to the X-axis direction and the Y-axis direction, and indicates a vertical direction (gravity direction).
Note that, in some cases, the same reference numerals are given to the same components or components having the same functions, and the description of the components will be appropriately omitted after the description.
(film Forming apparatus)
Fig. 1 is a schematic cross-sectional view of a film deposition apparatus according to the present embodiment. Fig. 2 (a) is a schematic plan view of the first region S1 as viewed from the vertical direction in plan view of fig. 1. Fig. 2 (b) is a schematic sectional view taken along line a-a of fig. 2 (a).
The film forming apparatus 1 is used to form an ultraviolet-curable resin layer as an energy beam-curable resin on a substrate W. The film forming apparatus 1 includes: vacuum vessel 10, cooling stage 15, adhesion prevention frame 18, partition wall 16, gas supply section 13, irradiation source 14, and gas supply line 100. The substrate W is, for example, a glass substrate, a semiconductor substrate, or the like, and may have a rectangular or circular planar shape, for example.
The vacuum vessel 10 has an upper portion filled with air and a lower portion filled with a vacuum container capable of maintaining a reduced pressure. The vacuum vessel 10 has: a first chamber body 11, and a second chamber body 12 disposed above the first chamber body 11. The vacuum tank 10 accommodates: a cooling stage 15, an adhesion prevention frame 18, a gas supply section 13, a radiation source 14, and a partition wall 16.
In the vacuum chamber 10, the first chamber body 11 and the second chamber body 12 are partitioned by a partition wall 16. The interior of the first chamber body 11 constitutes a first region S1. The interiors of the second chamber bodies 12 respectively constitute second regions S2.
The first region S1 is pressure-regulated to a predetermined vacuum degree by the vacuum exhaust system 19. The degree of vacuum at the time of pressure regulation is not particularly limited, but is generally set to 1X 10-3Pa is higher than or equal to 500 Pa. Further, the gas supply unit 13 is disposed in the first region S1. The second area S2 is maintained in, for example, an air environment. In the second region S2, a radiation source 14 as an ultraviolet light source is disposed so as to face the cooling stage 15.
The outline of the vacuum chamber 10 viewed in the Z-axis direction is designed to match the outline of the cooling stage 15, for example. For example, the vacuum vessel 10 has a rectangular outer shape. However, the shape thereof is not limited to a rectangle.
The cooling stage 15 is attached to the first chamber body 11 via a sealing mechanism, not shown, and is provided in the first region S1. The cooling stage 15 has a substrate support table 151 on which the substrate W is disposed. In the cooling stage 15, the substrate support table 151 has a support surface 151a which is disposed substantially at the center of the first region S1 and supports the substrate W to be processed.
The support surface 151a is located in an X-Y axis plane perpendicular to the Z-axis direction, and is rectangular here, although the shape is not particularly limited. The cooling table 15 includes a side surface 151w connected to the support surface 151a, in addition to the support surface 151 a. Further, the cooling stage 15 is configured to: when the substrate W is supported by the support surface 151a, the outer peripheral end E of the substrate W protrudes from the side surface portion 151W. In other words, the area of the support surface 151a is smaller than the area of the substrate W.
Further, the substrate support table 151 incorporates a cooling mechanism (temperature: minus 30 ℃ to 0 ℃ inclusive) not shown in the drawings for cooling the substrate W to a predetermined temperature. Thereby, the substrate W is cooled to a predetermined temperature by the cooling stage 15, and the ultraviolet curable resin in the source gas is cooled and condensed on the substrate W. As a result, the ultraviolet curable resin layer can be formed on the substrate W. In order to form an ultraviolet-curable resin layer having a uniform thickness on the substrate W, it is desirable that the temperature distribution in the surface of the substrate W when supported by the cooling stage 15 is not varied as much as possible.
The cooling stage 15 may also move the substrate support table 151 up and down in the Z-axis direction by a drive mechanism, not shown. The cooling stage 15 may have a rotation mechanism for rotating the support surface 151a in the X-Y axis plane.
The adhesion preventing frame 18 is disposed so as to surround the side surface portion 151w of the cooling stage 15. That is, the adhesion preventing frame 18 is an annular member in the X-Y axis plane. The outer shape of the adhesion preventing frame 18 in the X-Y axis plane is, for example, a rectangle. The adhesion preventing frame portion 18 is provided with a recess 181h at a position facing the outer peripheral end E of the substrate W. The recess 181h is composed of a bottom surface portion 181b, a side wall portion 181w, and an outer peripheral portion 181 e.
The bottom surface portion 181b is a portion of the bottom layer of the recess 181 h. The side wall portion 181w is a partition portion provided in connection with the bottom surface portion 181b and facing the side surface portion 151w of the cooling stage 15. The outer peripheral portion 181e is a thick portion provided in contact with the bottom portion 181b and surrounding the bottom portion 181b and the side wall portion 181 w. Since the adhesion preventing frame 18 has a ring shape in the X-Y axis plane, the recess 181h is also formed in a ring shape in the X-Y axis plane. Thereby, the side surface portion 151w of the cooling stage 15 is surrounded by the recessed portion 181 h.
Further, the adhesion preventing frame portion 18 is not in close contact with the side surface portion 151w of the cooling stage 15, and a first gap C1 having a gap width of, for example, 0.01mm to 0.5mm is provided between the side surface portion 151w of the cooling stage 15 and the adhesion preventing frame portion 18 (side wall portion 181 w). The adhesion preventing frame 18 is not in close contact with the substrate W, and a second gap C2 having a gap width of, for example, 0.01mm to 0.2mm is provided between the adhesion preventing frame 18 (the side wall portion 181W) and the substrate W. The second gap C2 communicates with the first gap C1. The second gap C2 is also a height difference between the side wall portion 181w and the support surface 151 a.
The outer frame member 20 is disposed so as to surround the cooling stage 15 and the adhesion preventing frame 18. That is, the outer frame member 20 is an annular member in the X-Y axis plane. The outer shape of the outer frame member 20 in the X-Y axis plane is, for example, a rectangle. The outer frame member 20 is provided with an exhaust duct 201 surrounding the cooling stage 15 and the adhesion preventing frame 18. The exhaust groove 201 communicates with the first region S1, and sucks the gas existing in the first region S1. Then, the gas present in the first region S1 is exhausted out of the vacuum chamber 10 through the exhaust groove 201 by the vacuum exhaust system 19.
The gas supply unit 13 is connected to a gas supply line 100 for generating a raw material gas containing an ultraviolet curable resin. The gas supply section 13 has a plurality of branch pipe sections 131. The gas supply unit 13 may be a shower plate described later. The irradiation source 14 irradiates ultraviolet rays UV as an energy beam to the support surface 151 a. Thereby, the ultraviolet curable resin applied to the substrate W is cured. Illumination source 14 is disposed in second region S2. The reflector 17 efficiently condenses the ultraviolet light UV irradiated from the irradiation source 14 toward the substrate W.
A partition wall 16 is located between the first chamber body 11 and the second chamber body 12. The partition wall 16 has a plate-like structure that divides the inside of the vacuum chamber 10 and includes an X-Y axis plane perpendicular to the Z-axis direction. The partition wall 16 has a transmission part 161 that transmits ultraviolet rays UV. The transmissive portion 161 may be the entire partition wall 16 or may be a part thereof. The transmission section 161 is constituted by, for example, a rectangular window section provided at 4 positions. The material constituting the transmitting portion 161 is not particularly limited as long as it transmits ultraviolet rays UV, and for example, quartz glass is used. The partition wall 16 can partition the environment of the first area S1 and the second area S2 and transmit the ultraviolet rays UV irradiated from the irradiation source 14.
As the ultraviolet curable resin material, for example, acrylic resin can be used. Further, a polymerization initiator or the like may be added to the resin and used. The raw material gas containing such a resin is generated through a gas supply line 100 provided outside the vacuum chamber 10. The gas supply line 100 is connected to the gas supply unit 13, and supplies a raw material gas containing the resin into the vacuum chamber 10.
The gas supply line 100 includes: a resin material supply line 110, a vaporizer 120, and a pipe 130.
The resin material supply line 110 is composed of a storage tank 111 filled with a liquid resin material, and a pipe 112 for conveying the resin material from the storage tank 111 to the vaporizer 120. As a method of transporting the resin material from the storage tank 111 to the vaporizer 120, for example, a method of using a carrier gas composed of an inert gas is given. Further, a valve V1, a liquid flow controller not shown, or the like may be attached to the pipe 112.
An end portion of the pipe 112 is disposed inside the vaporizer 120. The vaporizer 120 generates a mist of the resin material fed from the pipe 112, thereby generating a raw material gas. Here, generating the mist of the resin material means vaporizing the resin material. The vaporizer 120 is configured to be heated by a heating mechanism, not shown, so that the vaporized resin material can be maintained.
The vaporizer 120 is connected to a pipe 130. The raw material gas generated by the vaporizer 120 is supplied to the gas supply unit 13 via the pipe 130. At this time, a valve V2 may be attached to the pipe 130 to regulate the inflow of gas into the gas supply unit 13. Further, a flow rate controller, not shown, may be attached to control the flow rate of the gas flowing into the gas supply unit 13. The pipe 130 is also heated by a heating mechanism, not shown, to a temperature at which the vaporized state of the raw material gas can be maintained.
(film Forming method)
The film forming method using the film forming apparatus 1 mainly includes the following two steps. That is, the step of forming the ultraviolet-cured resin layer on the substrate W by supplying the raw material gas containing the ultraviolet-cured resin onto the substrate W from the gas supply portion 13, and the step of curing the ultraviolet-cured resin layer by irradiating the ultraviolet rays UV from the irradiation source 14.
(Process for Forming ultraviolet-curing resin layer)
First, as shown in fig. 1, the substrate W is placed on the support surface 151 a. Here, the outer peripheral edge E of the substrate W is supported by the support surface 151a so as to protrude from the side surface 151W. Further, an annular adhesion preventing frame 18 is disposed around the cooling stage 15.
Subsequently, the first region S1 is adjusted to a predetermined vacuum degree by the vacuum exhaust system 19. Here, a mask or the like capable of blocking a non-film-formed portion may be disposed on the substrate W, whereby the pattern formation of the ultraviolet curable resin layer can be easily performed.
The gas supply line 100 generates a raw material gas from a resin material, and supplies the raw material gas into the vacuum chamber 10 through the gas supply unit 13. The vaporizer 120 vaporizes the resin material and generates a raw material gas containing the ultraviolet curable resin. The generated source gas is supplied to the gas supply unit 13 through the pipe 130, and the source gas is discharged toward the substrate W by the gas supply unit 13. When the raw material gas reaches the substrate W, the resin in the raw material gas condenses on the substrate W, and an ultraviolet-cured resin layer is formed.
(curing step of ultraviolet-curing resin layer)
Next, the first chamber body 11 is irradiated with ultraviolet rays UV from the irradiation source 14 while being maintained at a predetermined degree of vacuum, and the ultraviolet-cured resin layer is cured. The ultraviolet rays UV irradiated from the irradiation source 14 pass through the transmission part 161 of the partition wall 16. The ultraviolet rays UV transmitted through the transmission part 161 are irradiated onto the substrate W through the gaps between the branch pipe parts 131. Further, a part of the ultraviolet rays UV irradiated toward the side wall direction of the second chamber body 12 are reflected by the reflecting plate 17 and converged on the substrate W disposed on the supporting surface 151 a.
Since the gas supply unit 13 is constituted by the plurality of branch pipe portions 131 arranged at intervals, the ultraviolet rays UV irradiated from the irradiation source 14 can be made to reach the substrate W without being blocked. This enables the ultraviolet-curable resin layer to be cured efficiently.
(action)
Fig. 3 is a schematic diagram showing the operation of the present embodiment.
As shown in fig. 3, the ultraviolet-curing resin layer 30 formed by irradiation of ultraviolet light UV is deposited on the adhesion preventing frame portion 18 disposed on the outer periphery of the substrate W, in addition to the substrate W. In particular, the more the ultraviolet-curable resin layer 30 is continuously formed, the more the deposition becomes conspicuous.
In this case, since the periphery of the cooling stage 15 is surrounded by the adhesion preventing frame 18 in which the recessed portion 181h is formed, the height of the cooling stage 15 and the adhesion preventing frame 18 is shifted in the vicinity of the outer periphery of the substrate W, and the deposition of the ultraviolet curable resin layer 30 on the side surface portion 151W can be suppressed (fig. 3).
If the recess 181h is not provided, the ultraviolet-curable resin layer 30 may be deposited below the outer peripheral edge W of the substrate W due to conveyance deviation of the substrate W (deviation of the supporting position of the substrate W on the supporting surface 151 a). If the ultraviolet-curing resin layer 30 is deposited below the outer peripheral edge W of the substrate W, the substrate W may be lifted up on the ultraviolet-curing resin layer 30 and may be separated from the support surface 151 a.
If such a phenomenon occurs, the substrate W is separated from the support surface 151a, and the cooling efficiency of the cooling stage 15 is lowered. This makes the in-plane temperature distribution of the substrate W uniform, and the thickness distribution of the ultraviolet-curable resin layer 30 formed on the substrate W nonuniform.
However, as in the present embodiment, the recessed portion 181h is formed in the adhesion preventing frame portion 18, so that the substrate W is prevented from being separated from the support surface 151a due to the rising of the ultraviolet curable resin layer 30, and the substrate W is prevented from being in contact with the entire surface of the support surface 151 a. Thereby, the in-plane temperature distribution of the substrate W becomes uniform by the cooling effect of the cooling stage 15. As a result, the ultraviolet-curable resin layer 30 is formed on the substrate W with a good film thickness distribution.
However, since the second gap C2 is not closed, the ultraviolet-curable resin layer 30 may be deposited in the second gap C2 during long-term driving.
(modification 1)
The above-described phenomenon that may occur is solved by the first modification.
Fig. 4 is a schematic cross-sectional view of a film deposition apparatus according to a modification of the present embodiment. Fig. 4 corresponds to a sectional view taken along line a-a of fig. 2 (a).
As shown in fig. 4, the cooling table 15 is provided with a gas injection mechanism 153 for injecting the inert gas G from the second gap C2 to the side wall of the vacuum chamber 10 through the first gap C1. Inert gas G is, for example, N2Ar, and the like. The gas injection mechanism 153 is constituted by, for example, a gas introduction pipe 153a attached to the cooling stage 15, a flow path 153b communicating with the first gap C1, a first gap C1, and a second gap C2. The flow path 153b is provided in the gas introduction pipe 153a and coolsBut inside the table 15. The gas introduction pipe 153a and the flow channel 153b are not particularly limited, and may be disposed along a plurality of first gaps C1, for example. The total flow rate of the inert gas G introduced into the flowing first region S1 is, for example, 0.01slm to 1 slm.
When the inert gas G is injected from the second gap C2 toward the sidewall of the vacuum chamber 10 by the gas injection mechanism 153, the inert gas G is sucked into the exhaust groove 201 and exhausted to the outside of the vacuum chamber 10 through the vacuum exhaust system 19. That is, a flow of the inert gas G from the second gap C2 to the sidewall of the vacuum chamber 10 is formed on the outer periphery of the cooling stage 15.
Thus, the source gas existing in the vicinity of the concave portion 181h is pushed back toward the side wall of the vacuum chamber 10 from the cooling stage 15 by the inert gas G. Therefore, the raw material gas is less likely to enter the first gap C1, and the ultraviolet-curable resin layer 30 is more likely to be formed in the first gap C1. As a result, the substrate W is reliably prevented from being lifted up on the ultraviolet curable resin layer 30, and the substrate is less likely to be separated from the cooling stage 15.
However, in the configuration of the first modification, although the ultraviolet-curable resin layer 30 is prevented from being formed in the first gap C1, a phenomenon occurs in which the ultraviolet-curable resin layer 30 is deposited on the side wall portion 181w in the recessed portion 181h (fig. 3). This is because in the reduced-pressure atmosphere, the concentration of the inert gas G becomes thinner as the inert gas G leaves the first gap C1, and the effect of repelling the source gas becomes weaker. If the ultraviolet-curable resin layer 30 deposited on the side wall portion 181W continues to grow, a phenomenon may occur in which the substrate W is lifted by the ultraviolet-curable resin layer 30. In particular, when continuous film formation is attempted for a long period of time, the ultraviolet-curable resin layer 30 grows significantly on the side wall portion 181 w.
(modification two)
The phenomenon that may occur in the first modification is solved by the second modification.
Fig. 5 (a) and (b) are schematic cross-sectional views of a film deposition apparatus according to a second modification of the present embodiment. Fig. 5 (a) corresponds to the sectional view of fig. 2 (a) taken along the line a-a. Fig. 5 (b) is an enlarged view of fig. 5 (a).
As shown in fig. 5 (a), the adhesion preventing frame 18 is provided with a spacer portion 181p facing the side wall portion 181w in the recess portion 181 h. The partition portion 181p is annular and surrounds the cooling stage 15. A third gap C3 is provided between the partition 181p and the side wall 181w, in parallel with the first gap C1. The gap width of the third gap C3 is 0.01mm to 0.5 mm.
A fourth gap C4 communicating with the second gap C2 and the third gap C3 is provided between the partition 181p and the substrate W. The flow passage 153b communicates with not only the first gap C1 but also the third gap C3. In other words, the downstream of the flow passage 153b is divided into two by the first gap C1 and the third gap C3. Further, the width of the fourth gap C4 is wider than the width of the second gap C2. The fourth gap C4 is also a height difference between the partition portion 181p and the support surface 151 a. The gap width of the fourth gap C4 is 0.01mm to 1 mm.
The gas injection mechanism 153 includes, for example, a gas introduction pipe 153a, a flow passage 153b, a first gap C1, a second gap C2, a third gap C3 communicating with the flow passage 153b, and a fourth gap. The gas injection mechanism 153 injects the inert gas G from the second gap C2 and the fourth gap C4 toward the sidewall of the vacuum chamber 10 through the first gap C1, and injects the inert gas G from the fourth gap C4 toward the sidewall through the third gap C3.
Provided is a film forming apparatus.
With this configuration, the inert gas is introduced into not only the first gap C1 but also the third gap C3. This makes it difficult for the raw material gas to adhere to the side wall 181w constituting the recessed portion 181h, and the ultraviolet-curable resin layer 30 is difficult to form on the side wall 181 w. Further, since the gap width of the fourth gap C4 is configured to be wider than the gap width of the second gap C2, even if the ultraviolet curing resin layer 30 is formed on the upper portion of the partition 181p as shown in fig. 5 (b), the ultraviolet curing resin layer 30 becomes longer in gap distance and accordingly is less likely to reach the substrate W. As a result, the substrate W is more reliably prevented from being separated from the supporting surface 151 a.
In addition, when the tapered portion 181t is provided at the upper corner of the spacer portion 181p on the opposite side to the side wall portion 181W, the effect of delaying the time for the ultraviolet-curable resin layer 30 to reach the substrate W is increased. As a result, the substrate W is more difficult to separate from the supporting surface 151 a.
(modification III)
Fig. 6 is a schematic plan view of a film deposition apparatus according to a third modification of the present embodiment. Fig. 6 shows a plane of the first region S1 when viewed from the vertical direction.
In the third modification, the gas injection mechanism 153 independently controls the flow rate of the inert gas G flowing through the third gap C3 facing the corner portion 151C of the supporting surface 151a and the flow rate of the inert gas G flowing through the third gap C3 facing the side portion 151s of the supporting surface 151a except the corner portion 151C. In this case, the gas injection mechanism 153 illustrated in fig. 5 controls the flow rate of the inert gas G flowing through the first gap C1 facing the corner portion 151C and the flow rate of the inert gas G flowing through the first gap C1 facing the side portion 151s independently.
Thus, in the fourth gap, the flow rate of the inert gas G injected from the fourth gap C4 facing the corner portion 151C and the flow rate of the inert gas G injected from the fourth gap C4 facing the side portion 151s are independently controlled.
Thus, even if a difference in the concentration of the source gas occurs around the supporting surface 151a, the source gas is pushed back from the cooling stage 15 toward the side wall of the vacuum chamber 10 by the flow rate of the inert gas G corresponding to the concentration of each region around the supporting surface. As a result, the ultraviolet curable resin layer 30 is prevented from being deposited in the recessed portion 181h in the vicinity of the corner portion 151c more preferentially than the recessed portion 181h in the vicinity of the side portion 151 s.
(modification four)
Fig. 7 is a schematic cross-sectional view of a film deposition apparatus according to a fourth modification of the present embodiment.
The plurality of branch piping units may be replaced with shower plates. The gas supply section 13B includes a shower plate section 1332 and a space section 1330. The shower plate section 1332 is disposed between the partition wall 16 and the support surface 151a, has a plurality of gas supply holes 1331 penetrating in the thickness direction, and is configured as a plate-like shower plate having ultraviolet light transmittance as a whole. The space 1330 is a space defined by a gap between the partition 16 and the shower plate section 1332 and the first chamber body 11.
Although the embodiments of the present invention have been described above, the present invention is not limited to the above embodiments, and various modifications may be added. The embodiments are not limited to the independent embodiments, and can be combined as technically as possible.
Description of the reference numerals
1: a film forming apparatus;
10: a vacuum tank;
11: a first chamber body;
11 c: a corner portion;
12: a second chamber body;
13. 13B: a gas supply unit;
14: an illumination source;
15: a cooling table;
16: a partition wall;
17: a reflective plate;
18: an adhesion prevention frame portion;
19: a vacuum exhaust system;
20: an outer frame member;
30: an ultraviolet-curable resin layer;
100: a gas supply line;
110: a resin material supply line;
111: a storage tank;
112: piping;
120: a vaporizer;
130: piping;
131: a branch pipe portion;
151: a substrate supporting table;
151 a: a bearing surface;
151 w: a side surface portion;
151 s: an edge portion;
151 c: a corner portion;
153: a gas injection mechanism;
153 a: a gas introduction pipe;
153 b: a flow path;
161: a transmissive portion;
181 h: a recess;
181 e: a peripheral portion;
181 b: a bottom surface portion;
181 w: a sidewall portion;
181 p: a partition plate portion;
181 t: a pyramid part;
201: an exhaust channel;
1330: a space section;
1331: a gas supply hole;
1332: a shower plate portion;
v1, V2: a valve;
c1: a first gap;
c2: a second gap;
c3: a third gap;
c4: a fourth gap;
s1: a first region;
s2: a second region;
w: a substrate;
e: an outer peripheral end.
Claims (6)
1. A film forming apparatus includes:
a cooling table having a support surface for supporting a substrate and a side surface portion continuous to the support surface, the cooling table being configured such that an outer peripheral end of the substrate supported by the support surface protrudes from the side surface portion,
an annular frame portion that is disposed so as to surround the side surface portion of the cooling stage, and that is provided with a recessed portion at a position facing the outer peripheral end of the substrate, the side surface portion being surrounded by the recessed portion,
a gas supply unit for supplying a raw material gas containing an energy beam-curable resin to the support surface,
a radiation source which is opposed to the support surface and irradiates the support surface with an energy beam for curing the energy beam-curable resin, and
and a vacuum tank in which the cooling stage, the adhesion prevention frame portion, the gas supply portion, and the irradiation source are accommodated.
2. The film forming apparatus according to claim 1,
a first gap is provided between the side surface portion of the cooling table and the adhesion preventing frame portion,
a second gap is arranged between the adhesion preventing frame part and the substrate,
the cooling stage is provided with a gas injection mechanism for injecting an inert gas from the second gap to the sidewall of the vacuum chamber through the first gap.
3. The film forming apparatus according to claim 2,
the concave portion provided in the adhesion prevention frame portion is composed of a bottom surface portion, a side wall portion, and an outer peripheral portion,
the side wall portion is provided in connection with the bottom surface portion and faces the side surface portion of the cooling table,
the outer peripheral portion is provided in connection with the bottom surface portion so as to surround the bottom surface portion and the side wall portion,
a partition plate portion facing the side wall portion and surrounding the cooling stage is attached to the recessed portion,
a third gap arranged in parallel with the first gap is provided between the partition plate portion and the side wall portion,
a fourth gap is provided between the barrier portion and the substrate,
the gas injection mechanism injects the inert gas from the second gap and the fourth gap toward the sidewall of the vacuum chamber through the first gap, and injects the inert gas from the fourth gap toward the sidewall through the third gap.
4. The film forming apparatus according to claim 2 or 3,
the fourth gap has a width wider than a width of the second gap.
5. The film forming apparatus according to any one of claims 2 to 4,
the bearing surface of the cooling table is rectangular,
the gas injection mechanism independently controls a flow rate of the inert gas flowing through the third gap facing a corner portion of the support surface and a flow rate of the inert gas flowing through the third gap facing a side portion of the support surface other than the corner portion.
6. A method for forming a film, comprising the steps of,
supporting a substrate on a support surface of a cooling table having the support surface for supporting the substrate and a side surface portion continuous to the support surface such that an outer peripheral end of the substrate protrudes from the side surface portion,
an annular adhesion prevention frame portion surrounding the side surface portion of the cooling table, a recess portion being provided in the adhesion prevention frame portion at a position facing the outer peripheral end of the substrate, the adhesion prevention frame portion surrounding the side surface portion by the recess portion being arranged around the cooling table,
supplying a raw material gas containing an energy beam-curable resin to the substrate,
irradiating the substrate with an energy beam that cures the energy beam curing resin, thereby forming a resin layer on the substrate.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018-226773 | 2018-12-03 | ||
| JP2018226773 | 2018-12-03 | ||
| PCT/JP2019/034003 WO2020115962A1 (en) | 2018-12-03 | 2019-08-29 | Film forming apparatus and film forming method |
Publications (2)
| Publication Number | Publication Date |
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| CN112334595A true CN112334595A (en) | 2021-02-05 |
| CN112334595B CN112334595B (en) | 2022-12-30 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201980043138.0A Active CN112334595B (en) | 2018-12-03 | 2019-08-29 | Film forming apparatus and film forming method |
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| Country | Link |
|---|---|
| JP (1) | JP7093850B2 (en) |
| KR (1) | KR102461306B1 (en) |
| CN (1) | CN112334595B (en) |
| TW (1) | TWI773926B (en) |
| WO (1) | WO2020115962A1 (en) |
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| CN109321890A (en) * | 2015-07-03 | 2019-02-12 | 应用材料公司 | Processing accessory with high deposition ring and deposition ring fixture |
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- 2019-08-29 WO PCT/JP2019/034003 patent/WO2020115962A1/en active Application Filing
- 2019-08-29 JP JP2020559717A patent/JP7093850B2/en active Active
- 2019-08-29 KR KR1020207036892A patent/KR102461306B1/en active IP Right Grant
- 2019-08-29 CN CN201980043138.0A patent/CN112334595B/en active Active
- 2019-09-20 TW TW108133980A patent/TWI773926B/en active
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Also Published As
| Publication number | Publication date |
|---|---|
| TWI773926B (en) | 2022-08-11 |
| KR20210011443A (en) | 2021-02-01 |
| JP7093850B2 (en) | 2022-06-30 |
| TW202022143A (en) | 2020-06-16 |
| CN112334595B (en) | 2022-12-30 |
| WO2020115962A1 (en) | 2020-06-11 |
| KR102461306B1 (en) | 2022-10-31 |
| JPWO2020115962A1 (en) | 2021-09-02 |
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