KR20210011443A - Film formation apparatus and film formation method - Google Patents

Abstract

A resin layer is formed on the substrate with good film thickness distribution. In the film forming apparatus, the cooling stage has a support surface for supporting the substrate and a side surface portion continuous to the support surface, and is configured such that an outer peripheral end of the substrate supported on the support surface protrudes from the side surface portion. The anti-rust frame portion has an annular shape, is disposed so as to surround the side surface of the cooling stage, a recess is provided at a position opposite to the outer peripheral end of the substrate, and the side surface is surrounded by the recess. The gas supply unit supplies the raw material gas containing the energy ray-curable resin toward the support surface. The irradiation source faces the support surface and irradiates an energy ray for curing the energy ray-curable resin toward the support surface. The vacuum tank houses a cooling stage, an anti-rust frame part, a gas supply part, and an irradiation source.

Description

Film formation apparatus and film formation method

The present invention relates to a film forming apparatus and a film forming method.

When an energy ray-curable resin such as an ultraviolet curable resin is cured to form a resin layer on a substrate, the following two steps are typically performed. That is, the process of supporting the substrate by the cooling stage and supplying the raw material gas containing the resin onto the substrate supported by the cooling stage, and the resin layer cured on the substrate by irradiating light such as ultraviolet rays onto the substrate. It is a forming process.

In particular, in recent years, the process of supplying raw material gas onto the substrate and forming a cured resin layer on the substrate by ultraviolet rays, etc., instead of performing such a plurality of processes in different vacuum chambers, are performed in one vacuum chamber. A film forming apparatus is provided (see, for example, Patent Document 1).

Japanese Unexamined Patent Publication No. 2013-064187

However, in a reduced pressure atmosphere, the source gas is likely to adhere to the cooling stage corresponding to the narrow portion of the substrate (from the outer periphery to the front of the substrate). When the raw material gas is cured and thickly deposited in the resin layer, a phenomenon in which the substrate is mounted on the resin layer occurs. For this reason, the cooling effect of the substrate by the cooling stage is degraded, and the in-plane temperature distribution of the substrate is not uniform, leading to a situation in which a desired film thickness distribution cannot be obtained.

As a means of solving this problem, there is a method of attaching a barrier plate surrounding the side surface of the cooling stage around the cooling stage. However, even if such a barrier-free plate is provided, a resin layer may be deposited on the barrier-free plate in the narrow portion of the substrate, resulting in a similar phenomenon.

In view of the above circumstances, an object of the present invention is to provide a film forming apparatus and a film forming method capable of forming a resin layer on a substrate with a good film thickness distribution.

In order to achieve the above object, a film forming apparatus according to one embodiment of the present invention includes a cooling stage, an anti-seizure frame part, a gas supply part, an irradiation source, and a vacuum tank.

The cooling stage has a support surface for supporting the substrate and a side portion continuous to the support surface, and is configured such that an outer peripheral end of the substrate supported on the support surface protrudes from the side surface.

The anti-rust frame portion has an annular shape, is disposed so as to surround the side portion of the cooling stage, a concave portion is provided at a position opposite to the outer peripheral end of the substrate, and the side portion is formed by the concave portion. Surrounded.

The gas supply unit supplies a source gas containing an energy ray-curable resin toward the support surface.

The irradiation source faces the support surface and irradiates an energy ray for curing the energy ray-curable resin toward the support surface.

The vacuum tank accommodates the cooling stage, the anti-seizure frame part, the gas supply part, and the irradiation source.

According to such a film forming apparatus, since the anti-rust frame portion is disposed so as to surround the side surface of the cooling stage, it becomes difficult for the resin layer to be deposited on the cooling stage. In addition, since the concave portion is provided in the anti-deposition frame portion at a position opposite to the outer circumferential end of the substrate, even if the resin layer is deposited on the anti-deposition frame portion, the resin layer does not reach the substrate and the substrate is difficult to fall off the cooling stage. For this reason, the in-plane temperature distribution of the substrate becomes uniform, and a resin layer can be formed on the substrate with good film thickness distribution.

In the film forming apparatus, a first gap is provided between the side surface of the cooling stage and the deposition-proof frame part, a second gap is provided between the deposition-proof frame part and the substrate, and the cooling stage is via the first gap. Thus, a gas injection mechanism for injecting an inert gas from the second gap toward the side wall of the vacuum chamber may be provided.

According to this film forming apparatus, the source gas is returned from the stage in the direction toward the side wall of the vacuum chamber by the inert gas injected in the first gap between the deposition-proof frame portion and the substrate. For this reason, it becomes difficult to form a resin layer in the 1st gap, and it becomes difficult to more surely separate the substrate from the cooling stage.

In the film forming apparatus, the concave portion provided in the anti-deposition frame portion is extended to a bottom face portion and the bottom face portion, a side wall portion opposite to the side portion of the cooling stage, and the bottom face portion, and the bottom face Consisting of a portion and an outer peripheral portion surrounding the side wall portion, a partition portion facing the side wall portion and surrounding the cooling stage is provided in the concave portion, and the first gap and juxtaposition between the partition portion and the side wall portion ( A third gap is provided, a fourth gap is provided between the partition and the substrate, and the gas injection mechanism passes through the first gap, and the second gap and the fourth gap are The inert gas may be injected toward the side wall of the vacuum chamber and at the same time, the inert gas may be injected from the fourth gap toward the side wall via the third gap.

According to such a film forming apparatus, an inert gas is introduced not only into the first gap but also into the third gap. For this reason, it becomes difficult for the source gas to adhere to the sidewalls constituting the recesses, and it becomes difficult to form a resin layer on the sidewalls. As a result, it becomes difficult for the substrate to be more reliably separated from the cooling stage.

In the film forming apparatus, the width of the fourth gap may be wider than that of the second gap.

According to such a film forming apparatus, since the width of the fourth gap is wider than that of the second gap, even if the resin layer is formed on the upper part of the partition, the resin layer becomes difficult to contact the substrate. As a result, it becomes difficult for the substrate to be more reliably separated from the cooling stage.

In the film forming apparatus, the support surface of the cooling stage is rectangular, and the gas injection mechanism includes a flow rate of the inert gas flowing through the third gap opposite to a corner portion of the support surface, and the corner portion. In addition, the flow rate of the inert gas flowing through the third gap facing the edge of the support surface may be independently controlled.

According to such a film forming apparatus, even if the concentration of the raw material gas present in the vicinity of each portion of the cooling stage and the concentration of the raw material gas present in the vicinity of the edge portion of the cooling stage are different, flowing through the third gap in each of the vicinity of each portion and the edge portion. The flow rate of the inert gas can be independently controlled. For this reason, it is possible to uniformly control the thickness of the resin layer deposited on the concave portions in the vicinity of the corners and the edges. As a result, it becomes difficult for the substrate to be more reliably separated from the cooling stage.

In a film forming method according to an aspect of the present invention, the substrate is supported on the support surface of a cooling stage having a support surface supporting the substrate and a side portion continuous to the support surface so that the outer circumferential end of the substrate protrudes from the side surface. .

As an annular anti-rust frame portion surrounding the side portion of the cooling stage, a recessed portion is provided at a position opposite to the outer circumferential end of the substrate, and the anti-rust frame portion surrounded by the recessed portion is around the cooling stage Is placed in

A raw material gas containing an energy ray-curable resin is supplied toward the substrate.

A resin layer is formed on the substrate by irradiating energy rays for curing the energy ray-curable resin toward the substrate.

According to this film forming method, since the anti-deposition frame portion is disposed so as to surround the side surface of the cooling stage, it becomes difficult for the resin layer to be deposited on the cooling stage. Further, since the concave portion is provided in the anti-deposition frame portion at a position opposite to the outer circumferential end of the substrate, even if the resin layer is deposited in the anti-deposition frame portion, the resin layer does not reach the substrate and the substrate is difficult to detach from the cooling stage. For this reason, the in-plane temperature distribution of the substrate becomes uniform, and a resin layer can be formed on the substrate with good film thickness distribution.

As described above, according to the present invention, a film forming apparatus and a film forming method capable of forming a resin layer on a substrate with a good film thickness distribution are provided.

1 is a schematic cross-sectional view of a film forming apparatus according to the present embodiment.
FIG. 2(a) is a schematic plan view of the first region S1 of FIG. 1 viewed from the top in the vertical direction. Fig. (b) is a schematic cross-sectional view taken along line AA in Fig. (a).
3 is a schematic diagram showing the action of this embodiment.
4 is a schematic cross-sectional view of a film forming apparatus according to Modification Example 1 of the present embodiment.
5 is a schematic cross-sectional view of a film forming apparatus according to Modification Example 2 of the present embodiment.
6 is a schematic plan view of a film forming apparatus according to Modification Example 3 of the present embodiment.
7 is a schematic cross-sectional view of a film forming apparatus according to Modification Example 4 of the present embodiment.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In each drawing, XYZ axis coordinates may be introduced. For example, in the figure, the X-axis direction and the Y-axis direction represent directions that are orthogonal to each other, and these represent horizontal directions in the embodiment. The Z-axis direction represents a direction orthogonal to the X-axis direction and the Y-axis direction, and represents the vertical direction (gravity direction).

In addition, the same reference numeral may be given to the same member or members having the same function, and the description may be omitted appropriately after the member is described.

(Film forming apparatus)

1 is a schematic cross-sectional view of a film forming apparatus according to the present embodiment. FIG. 2A is a schematic plan view of the first region S1 of FIG. 1 viewed from the top in the vertical direction. Fig. 2(b) is a schematic cross-sectional view taken along line A-A in Fig. 2(a).

The film forming apparatus 1 is a film forming apparatus for forming an ultraviolet curable resin layer, which is an energy ray curable resin, on a substrate W. The film forming apparatus 1 includes a vacuum bath 10, a cooling stage 15, an anti-deposition frame 18, a partition wall 16, a gas supply unit 13, an irradiation source 14, and a gas supply line. It has 100. The substrate W is, for example, a glass substrate, a semiconductor substrate, or the like, and the planar shape thereof may be, for example, a rectangular or circular shape.

The vacuum tank 10 is a vacuum container capable of maintaining a decompression state at the top and at the bottom. The vacuum bath 10 has a first chamber body 11 and a second chamber body 12 disposed on the first chamber body 11. The vacuum bath 10 accommodates the cooling stage 15, the anti-rust frame part 18, the gas supply part 13, the irradiation source 14, and the partition wall 16.

In the vacuum chamber 10, the first chamber body 11 and the second chamber body 12 are partitioned by a partition wall 16. The inside of the first chamber body 11 constitutes a first region S1. The inside of the second chamber body 12 constitutes a second region S2, respectively.

In the first region S1, the pressure is adjusted to a predetermined degree of vacuum by the vacuum exhaust system 19. The degree of vacuum during pressure control is not particularly limited, but is generally set to 1×10 −3 Pa or more and 500 Pa or less. In addition, the gas supply unit 13 is disposed in the first region S1. The second area S2 is maintained in an atmospheric atmosphere, for example. An irradiation source 14 serving as an ultraviolet light source is disposed in the second region S2 so as to face the cooling stage 15.

The external shape of the vacuum tank 10 viewed from the Z-axis direction is designed to match the external shape of the cooling stage 15, for example. For example, the outer shape of the vacuum tank 10 is a rectangular shape. However, this external shape is not limited to a rectangle.

The cooling stage 15 is mounted on the first chamber body 11 through a seal mechanism (not shown) or the like, and is installed in the first region S1. The cooling stage 15 has a substrate support 151 for arranging the substrate W. The cooling stage 15 includes a substrate support 151 disposed approximately at the center of the first region S1 and has a support surface 151a supporting the substrate W to be processed.

The support surface 151a is in the X-Y-axis plane orthogonal to the Z-axis direction, and the shape is not particularly limited, but has a rectangular shape. The cooling stage 15 has a side portion 151w continuous to the support surface 151a in addition to the support surface 151a. Further, the cooling stage 15 is configured such that when the substrate W is supported on the support surface 151a, the outer peripheral end E of the substrate W protrudes from the side surface 151w. In other words, the area of the support surface 151a is smaller than the area of the substrate W.

Further, the substrate support 151 has a built-in cooling mechanism (temperature: -30°C or more and 0°C or less) for cooling the substrate W to a predetermined temperature. For this reason, the substrate W is cooled to a predetermined temperature by the cooling stage 15, and the ultraviolet curing resin in the raw material gas is cooled on the substrate W and condensed. As a result, it becomes possible to form an ultraviolet curable resin layer on the substrate W. In order to form an ultraviolet curable resin layer having a uniform film thickness on the substrate W, it is preferable that the temperature distribution in the plane of the substrate W when supported by the cooling stage 15 is not as irregular as possible.

Further, the cooling stage 15 may raise and lower the substrate support 151 in the Z-axis direction by a drive mechanism (not shown). Further, the cooling stage 15 may be provided with a rotating mechanism that rotates the support surface 151a within the X-Y axis plane.

The anti-rust frame portion 18 is disposed to surround the side portion 151w of the cooling stage 15. That is, the anti-corrosion frame part 18 is an annular member in the X-Y axis plane. The outer shape of the anti-corrosion frame part 18 in the X-Y axis plane is, for example, a rectangle. A concave portion 181h is provided in the anti-rust frame portion 18 at a position opposite to the outer peripheral end E of the substrate W. The concave portion 181h is constituted by a bottom portion 181b, a side wall portion 181w, and an outer peripheral portion 181e.

The bottom portion 181b is a portion that becomes the basis of the recess portion 181h. The side wall portion 181w is a partition portion that extends to the bottom portion 181b and faces the side portion 151w of the cooling stage 15. The outer circumferential portion 181e extends to the bottom portion 181b and is a thickness portion surrounding the bottom portion 181b and the side wall portion 181w. Since the anti-corrosion frame portion 18 is annular in the X-Y axis plane, the concave portion 181h is also configured in an annular shape in the X-Y axis plane. For this reason, the side surface portion 151w of the cooling stage 15 has a configuration surrounded by the recess portion 181h.

In addition, the anti-adhesion frame portion 18 and the side portion 151w of the cooling stage 15 are not in close contact, and between the side portion 151w of the cooling stage 15 and the anti-deposition frame portion 18 (side wall portion 181w) The first gap C1 having a gap width of 0.01 mm or more and 0.5 mm or less is provided, for example. The anti-adhesion frame portion 18 and the substrate W are not in close contact, and between the anti-deposition frame portion 18 (side wall portion 181w) and the substrate W, for example, a gap width of 0.01 mm or more and 0.2 mm or less. A second gap C2 is provided. The second gap C2 communicates with the first gap C1. In addition, the second gap C2 may be a height difference between the side wall portion 181w and the support surface 151a.

The outline member 20 is disposed so as to surround the cooling stage 15 and the anti-rust frame portion 18. That is, the outline member 20 has an annular shape in the X-Y axis plane. The outer shape of the outline member 20 in the X-Y axis plane is, for example, a rectangle. The outline member 20 is provided with an exhaust groove 201 surrounding the cooling stage 15 and the anti-rust frame portion 18. The exhaust groove 201 communicates with the first region S1 and sucks gas present in the first region S1. Then, the gas existing in the first region S1 is exhausted from the vacuum chamber 10 through the exhaust groove 201 by the vacuum exhaust system 19.

The gas supply unit 13 is connected to a gas supply line 100 for generating a raw material gas containing an ultraviolet curable resin. The gas supply part 13 has a plurality of branch pipe parts 131. The gas supply unit 13 may be a shower plate to be described later. The irradiation source 14 irradiates ultraviolet rays (UV), which are energy rays, toward the support surface 151a. For this reason, the ultraviolet curable resin applied on the substrate W is cured. The irradiation source 14 is disposed in the second area S2. The reflector 17 efficiently condenses ultraviolet rays (UV) irradiated from the irradiation source 14 onto the substrate W.

The partition wall 16 is positioned between the first chamber body 11 and the second chamber body 12. The partition wall 16 partitions the interior of the vacuum chamber 10 and has a plate-shaped structure including an X-Y axis plane orthogonal to the Z axis direction. The partition wall 16 has a transmission portion 161 that transmits ultraviolet rays (UV). The permeable portion 161 may be the whole or part of the partition wall 16. The transmission portion 161 is constituted by, for example, a rectangular window portion provided at four locations. In addition, the material constituting the transmission portion 161 is not particularly limited as long as it transmits ultraviolet (UV) rays, and for example, quartz glass is employed. By blocking the atmosphere of the first region S1 and the second region S2 by the barrier rib 16, the ultraviolet rays (UV) irradiated from the irradiation source 14 can be transmitted.

As the ultraviolet curable resin material, for example, an acrylic resin can be used. In addition, it is also possible to add and use a polymerization initiator or the like to the resin. The raw material gas containing such a resin is generated by the gas supply line 100 installed outside the vacuum tank 10. The gas supply line 100 is connected to the gas supply unit 13, and a raw material gas containing the resin is supplied into the vacuum bath 10.

The gas supply line 100 includes a resin material supply line 110, a vaporizer 120, and a pipe 130.

The resin material supply line 110 includes a tank 111 filled with a liquid resin material, and a pipe 112 for transporting the resin material from the tank 111 to the vaporizer 120. As a method of transporting the resin material from the tank 111 to the vaporizer 120, for example, a method of using a carrier gas made of an inert gas may be mentioned. In addition, it is also possible to mount a valve V1 or a liquid flow controller (not shown) to the pipe 112.

One end of the pipe 112 is disposed inside the vaporizer 120. The vaporizer 120 generates a mist of the resin material carried in the pipe 112 to generate a raw material gas. Here, generating a mist of the resin material is used in the sense of vaporizing the resin material. The vaporizer 120 is configured to be able to maintain the vaporized state of the resin material by being heated by a heating mechanism not shown.

The vaporizer 120 is connected to the pipe 130. The raw material gas generated by the vaporizer 120 is supplied to the gas supply unit 13 through a pipe 130. At this time, it is also possible to mount the valve V2 to the pipe 130 and control the inflow of gas to the gas supply unit 13. Further, by mounting a flow rate controller (not shown), it becomes possible to control the flow rate of the gas flowing into the gas supply unit 13. In addition, the pipe 130 is also heated to a temperature capable of maintaining the vaporized state of the source gas by a heating mechanism (not shown).

(Method of film formation)

The film forming method using the film forming apparatus 1 mainly has the following two steps. That is, by supplying a raw material gas containing an ultraviolet curing resin on the substrate W from the gas supply unit 13, the process of forming an ultraviolet curing resin layer on the substrate W, and the ultraviolet rays (UV ) By irradiation, there is a step of curing the ultraviolet curing resin layer.

(Formation process of UV-curable resin layer)

First, as shown in FIG. 1, the substrate W is disposed on the support surface 151a. Here, the substrate W is supported on the support surface 151a so that the outer peripheral end E of the substrate W protrudes from the side portion 151w. Further, an annular anti-rust frame portion 18 is disposed around the cooling stage 15.

Subsequently, the pressure in the first region S1 is adjusted to a predetermined degree of vacuum by the vacuum exhaust system 19. Here, a mask or the like capable of shielding the non-filmed portion may be disposed on the substrate W, and thus, pattern formation of the ultraviolet curable resin layer can be easily performed.

The gas supply line 100 generates a raw material gas from a resin material, and supplies the raw material gas into the vacuum tank 10 through the gas supply unit 13. The vaporizer 120 vaporizes a resin material and generates a raw material gas including an ultraviolet curable resin. The generated source gas is supplied to the gas supply unit 13 through the pipe 130, and the source gas is discharged from the gas supply unit 13 toward the substrate W. When the raw material gas reaches the substrate W, the resin in the raw material gas condenses on the substrate W to form an ultraviolet curable resin layer.

(The curing process of the UV-curing resin layer)

Subsequently, with the first chamber body 11 maintained at a predetermined degree of vacuum, the irradiation source 14 irradiates ultraviolet rays (UV) onto the substrate W to cure the ultraviolet curing resin layer. Ultraviolet rays (UV) irradiated by the irradiation source 14 pass through the transmission portion 161 of the partition wall 16. Ultraviolet rays (UV) transmitted through the transmission part 161 are irradiated onto the substrate W through the gap between the branch pipe parts 131. In addition, some ultraviolet rays (UV) irradiated in the sidewall direction of the second chamber body 12 are reflected by the reflector 17 and are condensed onto the substrate W disposed on the support surface 151a.

Since the gas supply unit 13 is composed of a plurality of branch pipes 131 arranged at intervals from each other, it is possible to reach the substrate W without shielding the ultraviolet rays (UV) irradiated from the irradiation source 14 It becomes. For this reason, the ultraviolet curing resin layer can be cured efficiently.

(Action)

3 is a schematic diagram showing the action of this embodiment.

As shown in FIG. 3, the ultraviolet curable resin layer 30 formed by irradiation of ultraviolet rays (UV) is deposited on the anti-deposition frame portion 18 disposed on the outer circumference of the substrate W as well as on the substrate W. do. In particular, as the continuous film formation is continued, the deposition of the ultraviolet curing resin layer 30 becomes remarkable.

In this case, by enclosing the periphery of the cooling stage 15 with the anti-deposition frame portion 18 in which the concave portion 181h is formed, in the vicinity of the outer periphery of the substrate W, the height of the cooling stage 15 and the anti-deposition frame portion 18 An offset of is generated, and deposition of the ultraviolet curable resin layer 30 on the side surface portion 151w is suppressed (Fig. 3).

If there is no concave portion 181h, the outer periphery of the substrate W due to the transfer distortion of the substrate W (irregularity in the support position when the substrate W is placed on the support surface 151a). Under the stage (W), the ultraviolet curing resin layer 30 is deposited. When the UV-curable resin layer 30 is deposited under the outer circumferential end W of the substrate W, the substrate W rises on the UV-curable resin layer 30 and the substrate W falls from the support surface 151a. This happens.

When this phenomenon occurs, the substrate W is separated from the support surface 151a, and the cooling efficiency by the cooling stage 15 is deteriorated. For this reason, the in-plane temperature distribution of the substrate W becomes uniform, and the film thickness distribution of the ultraviolet curable resin layer 30 formed on the substrate W becomes uneven.

However, as in the present embodiment, by forming the concave portion 181h in the adhesion-resistant frame portion 18, the phenomenon that the substrate W rises on the ultraviolet-curable resin layer 30, thereby suppressing the phenomenon of falling from the support surface 151a, The substrate W contacts the front surface of the support surface 151a. For this reason, the in-plane temperature distribution of the substrate W becomes uniform due to the cooling effect of the cooling stage 15. As a result, the ultraviolet curable resin layer 30 is formed on the substrate W with good film thickness distribution.

However, since the second gap C2 is not clogged, there is a possibility that the ultraviolet curable resin layer 30 is deposited in the second gap C2 when driving for a long time.

(Modified Example 1)

The phenomenon that may occur in the above is solved by Modification Example 1.

4 is a schematic cross-sectional view of a film forming apparatus according to Modification Example 1 of the present embodiment. Fig. 4 corresponds to a cross-sectional view taken along line A-A in Fig. 2A.

As shown in FIG. 4, in the cooling stage 15, a gas injection mechanism for injecting an inert gas G from the second gap C2 toward the side wall of the vacuum tank 10 via the first gap C1 ( 153) is installed. The inert gas G is, for example, N2 or Ar. The gas injection mechanism 153 includes, for example, a gas introduction pipe 153a attached to the cooling stage 15, a flow path 153b communicating with the first gap C1, and the first gap C1. , A second gap C2. The flow path 153b is installed in the gas introduction pipe 153a and in the cooling stage 15. The gas introduction pipe 153a and the flow path 153b are not particularly limited, and for example, a plurality of gas introduction pipes 153a and 153b may be disposed along the first gap C1. Further, all flow rates of the inert gas G introduced into the flowing first region S1 are, for example, 0.01 slm or more and 1 slm or less.

When the inert gas G is injected from the second gap C2 toward the side wall of the vacuum chamber 10 by the gas injection mechanism 153, the inert gas G is sucked by the exhaust groove 201 and vacuum It is exhausted from the vacuum chamber 10 by the exhaust system 19. That is, on the outer periphery of the cooling stage 15, an air flow of the inert gas G from the second gap C2 toward the side wall of the vacuum chamber 10 is formed.

For this reason, the source gas present in the vicinity of the concave portion 181h is returned by the inert gas G from the cooling stage 15 toward the side wall of the vacuum tank 10. Accordingly, it is difficult for the raw material gas to enter the first gap C1, and it becomes more difficult to form the ultraviolet curable resin layer 30 in the first gap C1. As a result, the phenomenon that the substrate W is mounted on the ultraviolet curable resin layer 30 is more reliably prevented, and the substrate W is less likely to be separated from the cooling stage 15.

However, in the configuration of Modified Example 1, the formation of the UV-curable resin layer 30 in the first gap C1 is prevented, but in the recess 181h, the UV-curable resin layer 30 is deposited on the sidewall portion 181w. This may occur (Fig. 3). This is because in a reduced pressure atmosphere, as the inert gas G moves away from the first gap C1, the concentration of the inert gas G becomes thinner, and the effect of repelling the raw material gas becomes faint. If the UV-curable resin layer 30 deposited on the sidewall portion 181w continues to grow, there is a possibility that the substrate W is lifted by the UV-curable resin layer 30. In particular, the growth of the ultraviolet curing resin layer 30 in the side wall portion 181w becomes remarkable when a continuous film formation over a long period of time is attempted.

(Modified Example 2)

The phenomenon that may occur in Modified Example 1 is solved by Modified Example 2.

5A and 5B are schematic cross-sectional views of a film forming apparatus according to Modification Example 2 of the present embodiment. FIG. 5A corresponds to a cross-sectional view taken along line A-A in FIG. 2A. Fig. 5(b) is an enlarged view of Fig. 5(a).

As shown in Fig. 5A, a partition portion 181p facing the side wall portion 181w from the concave portion 181h is provided in the anti-rust frame portion 18. The partition portion 181p has an annular shape and surrounds the cooling stage 15. A third gap C3 in parallel with the first gap C1 is provided between the partition part 181p and the side wall part 181w. The gap width of the third gap C3 is 0.01 mm or more and 0.5 mm or less.

A fourth gap C4 communicating with the second gap C2 and the third gap C3 is provided between the partition part 181p and the substrate W. The flow path 153b communicates with not only the first gap C1 but also the third gap C3. In other words, the downstream of the flow path 153b is divided into two branches by the first gap C1 and the third gap C3. Further, the width of the fourth gap C4 is wider than the width of the second gap C2. In addition, the fourth gap C4 is also a height difference between the partition portion 181p and the support surface 151a. The gap width of the fourth gap C4 is 0.01 mm or more and 1 mm or less.

The gas injection mechanism 153 is, for example, a gas introduction pipe 153a, a flow path 153b, a first gap C1, a second gap C2, and a third communicating with the flow path 153b. It is constituted by a gap C3 and a fourth gap. The gas injection mechanism 153 injects an inert gas G from the second gap C2 and the fourth gap C4 toward the side wall of the vacuum tank 10 via the first gap C1 and at the same time. , Inert gas G is injected from the fourth gap C4 toward the sidewall through the third gap C3.

Film forming device

According to this configuration, an inert gas is introduced not only into the first gap C1 but also into the third gap C3. For this reason, it becomes difficult for the raw material gas to adhere to the side wall portion 181w constituting the concave portion 181h, and the ultraviolet curable resin layer 30 is difficult to be formed on the sidewall portion 181w. In addition, since the gap width of the fourth gap C4 is made wider than that of the second gap C2, as shown in FIG. 5B, an ultraviolet curable resin layer ( Even if 30) is formed, the longer the gap distance, the more difficult it is for the ultraviolet curable resin layer 30 to contact the substrate W. As a result, it becomes difficult for the substrate W to be more reliably separated from the support surface 151a.

In addition, when the tapered portion 181t is provided on the upper angle of the partition portion 181p on the opposite side to the side wall portion 181w, the time for the UV-curable resin layer 30 to contact the substrate W is delayed. The effect increases. As a result, it becomes difficult for the substrate W to be more reliably separated from the support surface 151a.

(Modified Example 3)

6 is a schematic plan view of a film forming apparatus according to Modification Example 3 of the present embodiment. 6 shows a plane viewed from the top of the first region S1 in the vertical direction.

In the modified example 3, the flow rate of the inert gas G flowing through the third gap C3 opposing the corner portion 151c of the support surface 151a by the gas injection mechanism 153, and the corner portions 151c The flow rate of the inert gas G flowing through the third gap C3 facing the edge 151s of the other support surface 151a is independently controlled. In this case, the gas injection mechanism 153 illustrated in FIG. 5 includes a flow rate of the inert gas G flowing through the first gap C1 facing each portion 151c and a first gap facing the edge portion 151s. The flow rate of the inert gas G flowing through (C1) is independently controlled.

Therefore, in the fourth gap C4, the flow rate of the inert gas G injected from the fourth gap C4 facing the corner portion 151c and the fourth gap C4 facing the edge portion 151s The flow rate of the inert gas G injected from is independently controlled.

For this reason, even if a difference occurs in the concentration of the raw material gas around the support surface 151a, the raw material gas in the cooling stage 15 at the flow rate of the inert gas G according to the concentration of each region in the periphery Return towards the side wall of (10). As a result, the phenomenon that the UV-curable resin layer 30 preferentially deposits on the concave portion 181h near the corner portion 151c is avoided compared to the concave portion 181h near the edge portion 151s.

(Modified Example 4)

7 is a schematic cross-sectional view of a film forming apparatus according to Modification Example 4 of the present embodiment.

A plurality of branch piping portions may be replaced by shower plates. The gas supply part 13B has a shower plate part 1332 and a space part 1330. The shower plate portion 1332 is disposed between the partition wall 16 and the support surface 151a, has a plurality of gas supply holes 1331 penetrating in the thickness direction, and constitutes a plate-shaped shower plate having ultraviolet transmittance as a whole. do. The space portion 1330 is formed of a gap between the partition wall 16 and the shower plate portion 1332, and is a space partitioned by these and the first chamber body 11.

As described above, the embodiments of the present invention have been described, but it goes without saying that the present invention is not limited only to the above-described embodiments, and various types of changes can be added. Each embodiment is not limited to an independent form, and can be combined without technical limitation.

1: film forming device
10: vacuum bath
11: first chamber body
11c: each part
12: second chamber body
13, 13B: gas supply
14: investigator
15: cooling stage
16: bulkhead
17: reflector
18: anti-rust frame portion
19: vacuum exhaust system
20: outline member
30: UV curing resin layer
100: gas supply line
110: resin material supply line
111: tank
112: piping
120: carburetor
130: piping
131: branch piping
151: substrate support
151a: support surface
151w: side part
151s: vice
151c: parts
153: gas injection mechanism
153a: gas introduction pipe
153b: euro
161: transmission part
181h: Yobu
181e: outer periphery
181b: bottom
181w: side wall
181p: divider
181t: tapered portion
201: exhaust groove
1330: space part
1331: gas supply hole
1332: shower plate portion
V1, V2: valve
C1: first gap
C2: second gap
C3: third gap
C4: fourth gap
S1: first area
S2: second area
W: substrate
E: outer circumference

Claims (6)

A cooling stage having a support surface supporting a substrate and a side portion continuous to the support surface, and an outer peripheral end of the substrate supported on the support surface protrudes from the side surface;
An annular anti-rust frame portion disposed so as to surround the side portion of the cooling stage, provided with a concave portion at a position opposite to the outer peripheral end of the substrate, and surrounded by the concave portion
A gas supply unit for supplying a raw material gas containing an energy ray-curable resin toward the support surface,
An irradiation source facing the support surface and irradiating an energy ray for curing the energy ray-curable resin toward the support surface,
A vacuum bath accommodating the cooling stage, the anti-rust frame part, the gas supply part, and the irradiation source
A film forming apparatus comprising a.
The method of claim 1,
A first gap is installed between the side portion of the cooling stage and the anti-seal frame portion,
A second gap is provided between the shielding frame part and the substrate,
The cooling stage is provided with a gas injection mechanism for injecting an inert gas from the second gap toward the side wall of the vacuum chamber through the first gap.
Film formation device.
The method of claim 2,
The concave portion installed on the anti-rust frame portion
With the bottom part,
A side wall portion extending to the bottom portion and facing the side portion of the cooling stage;
An outer circumferential portion extending to the bottom portion and surrounding the bottom portion and the sidewall portion
Is composed by,
A partition part facing the side wall part and surrounding the cooling stage is provided in the recess,
A third gap juxtaposed with the first gap is provided between the partition part and the side wall part,
A fourth gap is provided between the partition and the substrate,
The gas injection mechanism injects the inert gas from the second gap and the fourth gap toward the side wall of the vacuum tank through the first gap, and the fourth gap via the third gap Injecting the inert gas toward the side wall
Film formation device.
The method according to claim 2 or 3,
The width of the fourth gap is wider than the width of the second gap
Film formation device.
The method according to any one of claims 2 to 4,
The support surface of the cooling stage is rectangular,
The gas injection mechanism,
Independently controlling a flow rate of the inert gas flowing through the third gap opposite to each part of the support surface and a flow rate of the inert gas flowing through the third gap opposite to the edge part of the support surface other than the corner part
Film formation device.
Supporting the substrate so that the outer peripheral end of the substrate protrudes from the side surface on the support surface of the cooling stage having a support surface supporting the substrate and a side portion continuous to the support surface,
In an annular anti-rust frame portion surrounding the side portion of the cooling stage, a recess is provided at a position opposite to the outer circumferential end of the substrate, and the side portion is surrounded by the recess around the cooling stage. Placed in,
Supplying a raw material gas containing an energy ray-curable resin toward the substrate,
Forming a resin layer on the substrate by irradiating energy rays for curing the energy ray-curable resin toward the substrate
Method of film formation.

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