KR102186663B1 - Method of manufacturing device structure - Google Patents

Abstract

The manufacturing method of the device structure of the present invention comprises a resin material forming step of forming a resin material made of an organic material on a substrate having irregularities so that at least the periphery of the convex portion is thicker than the flat portion, and the convex portion And a resin material etching step of removing the resin material of the flat portion by remaining a part of the resin material positioned around the. The resin material etching step detects a change in a specific condition among conditions for etching the resin material, and uses the detected detection result as an end point of the etching process.

Description

Method of manufacturing device structure

TECHNICAL FIELD The present invention relates to a method for manufacturing an element structure, and more particularly, to an element structure having a layered structure for protecting a device from oxygen, moisture, and the like, and to an optimal technique using a method for manufacturing the element structure.

This application claims priority based on Japanese Patent Application No. 2017-030316 for which it applied to Japan on February 21, 2017, and uses the content here.

As an element containing a compound that is liable to deteriorate by moisture or oxygen, for example, an organic EL (electroluminescence) element is known. For such devices, attempts have been made to suppress intrusion of moisture into the device by forming a laminated structure in which a layer containing a compound and a protective layer covering the layer are stacked. For example, in Patent Document 1 below, a light-emitting element having a protective film composed of a laminated film of an inorganic film and an organic film is described on an upper electrode layer.

[Patent Document 1] Japanese Unexamined Patent Publication No. 2013-73880

However, the coverage characteristic (step coverage) of the inorganic film having barrier properties to water vapor or the like is relatively low, and if there are irregularities on the surface of the substrate having the device layer, the inorganic film cannot sufficiently cover the irregularities. For example, there is a concern that a coating defect occurs in which the boundary portion of the irregularities formed on the substrate surface is not covered with an inorganic film. When such a defective coating of the inorganic film occurs, it becomes impossible to prevent the intrusion of moisture from the portion where the defective coating has occurred, and thus it becomes difficult to ensure sufficient barrier properties.

The present invention has been made in accordance with the above circumstances, and attempts to achieve at least one of the following objects.

1. To prevent deterioration of barrier properties in thin film encapsulation.

2. To reliably improve the barrier to water vapor in the protective film.

3. To provide a device structure capable of enhancing the barrier property to water vapor, and a method of manufacturing the device structure.

A method of manufacturing a device structure according to an aspect of the present invention is a resin material forming process in which a resin material made of an organic material is formed on a substrate having irregularities so that at least the periphery of the convex portion is thicker than the flat portion. And, a resin material etching step of removing the resin material of the flat portion by remaining a part of the resin material positioned around the convex portion, wherein the resin material etching step is a condition of etching the resin material , The problem was solved by detecting a change in a specific condition and using the detected detection result as an end point of the etching treatment.

In one aspect of the present invention, it is more preferable that the change in the specific condition is a change in the bias voltage applied to the substrate.

One aspect of the present invention may further include an inorganic film forming step of forming an inorganic material layer made of an inorganic material on the substrate on which the resin material remains after the resin material etching step.

According to the method of manufacturing a device structure according to an aspect of the present invention, it becomes possible to accurately remove the resin material, thereby not causing unnecessary damage to the lower layer, and removing unnecessary parts of the resin material, It becomes easily possible to localize.

In one aspect of the present invention, since the change in the specific condition is a change in the bias voltage applied to the substrate, it is accurately determined that the unnecessary portion of the resin material on the substrate has been removed, the etching process is terminated, and the resin in the flat portion is accurately Ash can be removed. For this reason, it becomes possible to shorten the time required for the film forming step, stabilize film characteristics, and prevent fluctuations in film characteristics.

One aspect of the present invention further includes an inorganic film forming step of forming an inorganic material layer made of an inorganic material on the substrate on which the resin material remains after the resin material etching step, so that unnecessary damage to the convex portion of the substrate It becomes possible to easily remove unnecessary portions of the resin material without giving a pressure, localize only necessary portions, and then seal with an inorganic material layer.

According to one aspect of the present invention, in the device structure, an effect of increasing the barrier property against water vapor or the like can be obtained.

According to one aspect of the present invention, the resin film can be etched without excess or shortage. Since the resin material can be left only in a necessary portion, the sealing property of the inorganic film formed on the remaining resin material is improved.

[Fig. 1] Fig. 1 is a schematic schematic diagram showing a manufacturing apparatus for implementing the method for manufacturing an element structure according to a first embodiment of the present invention.
Fig. 2 is a schematic cross-sectional view showing a resin film-forming portion of a manufacturing apparatus for performing the method for manufacturing an element structure according to the first embodiment of the present invention.
Fig. 3 is a schematic cross-sectional view showing a localization processing unit of a manufacturing apparatus for implementing the method for manufacturing an element structure according to the first embodiment of the present invention.
4 is a schematic cross-sectional view showing an element structure according to the first embodiment of the present invention.
5 is a plan view showing an element structure according to the first embodiment of the present invention.
Fig. 6 is an enlarged cross-sectional view of a main part of the device structure.
Fig. 7 is a process chart showing steps in the method of manufacturing an element structure according to the first embodiment of the present invention.
[Fig. 8] Fig. 8 is a process chart showing steps in the method of manufacturing an element structure according to the first embodiment of the present invention.
[Fig. 9] Fig. 9 is a process chart showing steps in the method of manufacturing an element structure according to the first embodiment of the present invention.
[Fig. 10] Fig. 10 is a process chart showing steps in the method of manufacturing an element structure according to the first embodiment of the present invention.
[Fig. 11] Fig. 11 is a process chart showing steps in the method of manufacturing an element structure according to the first embodiment of the present invention.
12 is a schematic cross-sectional view showing a modified example of the configuration of an element structure manufactured by the method of manufacturing an element structure according to the first embodiment of the present invention.
13 is a schematic cross-sectional view showing a modified example of the configuration of an element structure manufactured by the method of manufacturing an element structure according to the first embodiment of the present invention.
14 is a schematic cross-sectional view showing a modified example of the configuration of an element structure manufactured according to the method of manufacturing an element structure according to the first embodiment of the present invention.
Fig. 15 is a graph showing a bias voltage in an etching process in the method for manufacturing an element structure according to the first embodiment of the present invention.

Hereinafter, an apparatus for manufacturing an element structure according to a first embodiment of the present invention will be described based on the drawings.

1 is a schematic schematic diagram showing a manufacturing apparatus in a method for manufacturing an element structure according to the present embodiment. 2 is a schematic schematic diagram showing a resin film-forming part according to the present embodiment. 3 is a schematic schematic diagram showing a localization processing unit of the device for manufacturing an element structure according to the present embodiment, and in FIG. 1, reference numeral 1000 denotes a device for manufacturing an element structure.

The device 1000 for manufacturing an element structure according to the present embodiment manufactures an element structure such as an organic EL element, as described later. As shown in Fig. 1, the manufacturing apparatus 1000 includes a first layer forming unit 201, a resin film forming unit 100, a localization processing unit 202, a second layer forming unit 203, and A functional layer forming portion 204 for forming a functional layer serving as an organic EL layer, a core chamber 200, and a load lock chamber 210 connected to the outside are provided. The core chamber 200 includes a first layer forming unit 201, a resin film forming unit 100, a localization processing unit 202, a second layer forming unit 203, a functional layer forming unit 204, and a load lock chamber. Connected to 210.

In the interior of the load lock chamber 210, a substrate conveyed from another device or the like to the device 1000 for manufacturing an element structure is inserted. In the core chamber 200, for example, a substrate transfer robot (not shown) is disposed. Accordingly, the core chamber 200, each of the first layer forming unit 201, the resin film forming unit 100, the localization processing unit 202, the second layer forming unit 203, and the functional layer forming unit 204 ), the substrate can be transferred between the load lock chamber 210 and the load lock chamber 210. It is possible to transport the substrate to the outside of the device 1000 for manufacturing an element structure through the load lock chamber 210. The core chamber 200, the respective film formation chambers 100, 201, 202, 203, 204, and the load lock chamber 210 each constitute a vacuum chamber to which a vacuum exhaust system (not shown) is connected.

By carrying out the fabrication of the device structure 10 using the device structure manufacturing apparatus 1000 having the above configuration, it is possible to automate each manufacturing process and to efficiently manufacture by using a plurality of film formation chambers simultaneously. Can, and it becomes possible to increase productivity.

The first layer forming portion 201 covers the functional layer 3 disposed on the one side 2a of the substrate 2 in the element structure 10 described later, and has a local convex portion. A first layer 41 made of an inorganic material such as nitride (SiN _x ) is formed. The first layer forming unit 201 is a film forming chamber in which the first layer 41 is formed by, for example, a CVD (Chemical Vapor Deposition) method, a sputtering method, an ALD (Atomic Layer Deposition) method, or the like.

The functional layer forming portion 204 forms the functional layer 3 in the element structure 10 described later. In addition, the functional layer forming portion 204 can also be provided outside the load lock chamber 210.

The second layer forming portion 203 is a second layer made of an inorganic material similar to the first layer 41 so as to cover the first layer 41 and the resin material 51 in the device structure 10 to be described later. It is a film formation room forming (42). In addition, when the second layer 42 and the first layer 41 are made of the same material, the second layer forming portion 203 and the first layer forming portion 201 have the same configuration, or The second layer 42 and the first layer 41 may also be formed using a film formation room (common film formation room).

In addition, when any one of the second layer forming portion 203 and the first layer forming portion 201 or the common film forming chamber is constituted by a plasma CVD apparatus, the forming portions 201 and 203 or the film forming chamber are , In addition to the above-described functions, it is possible to combine the functions of the localization processing unit 202 to be described later. For example, by carrying a substrate on which a resin film is formed into a plasma CVD apparatus and introducing an oxidizing gas to generate plasma, the resin film can be etched to localize the resin film to form the resin material. After that, the second layer 42 may be formed in the plasma VD device as it is.

The resin film-forming part 100 supplies a vaporized resin material into the resin film-forming part 100 to form a resin material film 5a made of a resin material on the first layer 41. And curing the resin material film 5a to form the resin film 5.

As shown in FIG. 2, the resin film forming unit 100 includes a chamber 110 in which the internal space can be depressurized, and a vaporizer 300 for supplying the vaporized resin material to the chamber 110.

The inner space of the chamber 110 is composed of an upper space 107 and a lower space 108 as will be described later.

A vacuum evacuation device (vacuum evacuation means, vacuum, etc.) not shown is connected to the chamber 110, and the vacuum evacuation device can exhaust gas in the inner space so that the inner space of the chamber 110 becomes a vacuum atmosphere. It is structured.

In the inner space of the chamber 110, a shower plate 105 is disposed, and the upper space 107 is formed in the chamber 110 above the shower plate 105. At the top of the chamber 110, a top plate 120 made of a member capable of transmitting ultraviolet light is installed, and on the upper side of the top plate 120, an ultraviolet light irradiation device 122 (irradiation means , UV lamps, etc.) are arranged.

Here, since the shower plate 105 is also formed of a member capable of transmitting ultraviolet light, the ultraviolet light introduced from the irradiation device 122 into the upper space 107 further passes through the shower plate 105, and the shower plate ( It is possible to proceed to the lower space 108 located on the lower side of 105). Accordingly, the acrylic material film 5a (resin material film) formed on the substrate S described later is irradiated with ultraviolet light after film formation, and the acrylic material film is cured to form the acrylic resin film 5 (resin film). It is possible to form.

In the lower space 108 located below the shower plate 105 in the chamber 110, a stage 102 for placing a substrate S on which an acrylic film is formed (a substrate holding portion) ) Is placed.

In the chamber 110, an unillustrated heating device is disposed. The temperature of the inner wall surface of the chamber 110 constituting the upper space 107 and the lower space 108 is controlled by the heating device so that it is equal to or higher than the vaporization temperature of the resin material, preferably about 40 to 250°C. The temperature of the substrate S on which the resin material film is formed is controlled by the cooling device 102a built in the stage 102 (substrate holding unit) on which the substrate S is placed, and is preferably less than or equal to the vaporization temperature of the resin material. It is controlled below zero (0°C), for example, about -30 to 0°C.

The upper space 107 of the chamber 110 is in communication with the vaporizer 300 through a pipe 112 and a valve 112V. Accordingly, the vaporizer 300 can supply the vaporized resin material to the upper space 107 of the chamber 110. The vaporizer 300 has a vaporization tank 130, a discharge part 132, and a raw material container 150 of a resin material. The raw material of the resin material is supplied to the vaporization tank 130 through a pipe 140 and a valve 140V. The vaporizer 300 generates a vaporized resin material by spraying and heating the resin material from the discharge portion 132 toward the inner space of the vaporization tank 130.

In the resin film forming unit 100 having the above-described configuration, the resin material vaporized in the vaporization tank 130 is introduced from the vaporization tank 130 to the upper space 107 of the chamber 110. In addition, through a plurality of fine holes (not shown) installed in the shower plate 105, the vaporized resin material proceeds from the upper space 107 to the lower space 108, and the film-forming surface of the substrate S (Fig. 12 to the top).

By arranging a mask (not shown) on the film-forming surface of the substrate S, the vaporized resin material is attached to the substrate S through an opening (not shown) provided in the mask. In that case, in the manufacturing apparatus according to the embodiment of the present invention, the temperature of the substrate S is equal to or less than the vaporization temperature of the resin material by the cooling device 102a built in the stage 102 on which the substrate S is placed. Control, the resin material film 5a having good film quality can be formed on the substrate S.

Therefore, in the resin film-forming unit 100 according to the present embodiment, the stage 102, which is a support for placing the substrate S, holds the substrate S in a temperature band below zero degrees. The phosphorus cooling device 102a is incorporated.

The resin film-forming unit 100 is, for example, in the same chamber for forming a film of a resin material, which is a raw material of an ultraviolet-curable acrylic resin having a vaporization temperature of about 40 to 250°C, and for curing the formed resin material film 5a. It is configured to be possible within (110). Accordingly, it becomes possible to perform any treatment process with the same device configuration, and productivity can be improved.

In addition, the resin film forming part 100 shown in FIG. 2 is an example of the embodiment of this invention. The stage 102, which is a support for placing the substrate S, includes a cooling device 102a, which is a temperature control device, that holds the substrate S in a temperature range below the condensation temperature of the resin material, for example, below zero degrees. If it is built-in, other configurations may be adopted.

For example, if the vaporized resin material can move uniformly (flowable) in the surface toward the substrate S, it is not necessary to arrange the shower plate 105 in the inner space of the chamber 110.

After depositing the resin material, the resin material film is irradiated with ultraviolet light, the resin material film 5a is photopolymerized and cured, and after forming the resin film, the mask M is removed and the substrate S is localized. Move to ).

As the configuration of the localization processing unit 202, a configuration of a dry etching processing apparatus, in particular, a plasma etching processing apparatus can be adopted.

The localization processing unit 202 is a parallel plate type plasma processing apparatus, as shown in FIG. 3. Specifically, the localization processing unit 202 introduces a gas for introducing an etching gas into the chamber 222, an electrode 226 installed in the chamber 222 to place the substrate S, and the chamber 222 A bias voltage to the tube 223, a high frequency power supply 224 for supplying a high frequency as an energy source to the etching gas, an antenna 225 connected to the high frequency power supply 224, and the electrode 226 in the chamber 222 A high-frequency power supply 227 to which is applied, a pressure control valve 228 for maintaining a constant pressure in the chamber 222, and a bias voltage sensor 229 are provided.

In order to perform the localization treatment in the plasma processing apparatus 202, first, an etching gas is introduced into the chamber 222 from the gas introduction pipe 223. A high frequency generated by the high frequency power source 224 as an energy source is incident on the etching gas through the antenna 225 into the chamber 222. This high frequency is irradiated to the etching gas to generate plasma. A bias voltage is applied from the high-frequency power source 227 to the electrode 226 in the chamber 222, and ions present in the plasma are introduced into the substrate S placed on the electrode 226. Then, the resin film 5 formed on the surface of the substrate S is etched.

Here, the resin film 5 is anisotropically etched by ions in plasma generated by an etching gas such as oxygen.

In addition, when the above-described first layer forming portion 201 or second layer forming portion 203 has a sputtering apparatus or plasma CVD apparatus, these forming portions 201 and 203 not only have a film forming function, but also It can have the function of the goods processing unit 202. In this case, it is possible to use the same processing apparatus as the first layer forming unit 201, the second layer forming unit 203, and the localization processing unit 202, for example.

In the localization processing unit 202, most of the resin film 5 formed on the substrate S is removed by, for example, plasma etching using oxygen as an etching gas. In this plasma treatment, a treatment time for removing unnecessary portions of the resin film 5 on the substrate S is calculated from the film thickness and the etching rate of the resin film 5, and is performed at a predetermined treatment time according to this time. I can.

In addition, in the localization processing unit 202 in this embodiment, the bias voltage sensor 229 measures a bias voltage (Vpp) applied to the electrode 226 from the high frequency power supply 227, and changes the measured value. According to this, it is a detection device that determines that the unnecessary portion of the resin film 5 on the substrate S has been removed, and uses the determination result (detection result) as an end point of the etching process.

In the localization processing unit 202 in the present embodiment, the bias voltage Vpp measured by the bias voltage sensor 229 during the localization processing, as shown in FIG. Rises with. In addition, when the bias voltage Vpp at which unnecessary portions of the organic thin film 5 on the substrate S calculated from the etching rate are removed is 100%, as shown in FIG. 15, the bias voltage Vpp ) Temporarily becomes a constant value. In addition, when etching is performed, the bias voltage Vpp rises and then becomes constant.

It can be considered that the bias voltage Vpp fluctuates greatly as unnecessary portions of the organic thin film 5 on the substrate S were removed by the plasma treatment. That is, the presence or absence of the resin film 5 changes before and after the time when the bias voltage Vpp greatly fluctuates. That is, the time when the resin film 5 is removed in a portion of a large area, such as a flat portion of the resin film 5, and a time when the removal of the flat portion of the large area is finished, the resin material is localized, and there is almost no etching. , The bias voltage Vpp changes. It is considered that this is because the plasma density increases and the bias voltage is difficult to increase because a large amount of gas generated by etching is contained in the plasma during a large amount of etching.

In order to verify the above-described phenomenon, the present inventors confirmed the presence or absence of the resin film 5 (acrylic film) before and after the point in time when the bias voltage Vpp in plasma etching greatly fluctuated, by means of an SEM image. As a result, it was confirmed that the resin film 5 (acrylic film) was present on the flat surface portion of the substrate S before the time when the bias voltage Vpp greatly varied. In addition, after the point in time when the bias voltage Vpp greatly fluctuated, the resin film 5 (acrylic film) did not exist on most of the surface of the substrate S except for the portion remaining after localization. From this result, an unnecessary portion of the resin film 5 on the substrate S is removed due to an increase fluctuation in the value of the bias voltage Vpp in a short time, and it can be determined as an end point of the etching process. That is, the point at which the bias voltage Vpp increases after being temporarily constant, or within a predetermined time thereafter, can be set as the end point of the etching process.

Hereinafter, the device structure 10 manufactured by the device structure manufacturing apparatus 1000 according to the present embodiment will be described.

4 is a schematic cross-sectional view showing an element structure according to the present embodiment. 5 is a plan view showing the device structure of FIG. 4. 6 is an enlarged view showing a main part of the device structure. In each figure, the X-axis, Y-axis, and Z-axis directions represent three mutually orthogonal directions, and in the present embodiment, the X-axis and Y-axis directions represent mutually orthogonal horizontal directions, and the Z-axis direction represents a vertical direction.

The device structure 10 according to the present embodiment is formed on the substrate 2 including the device layer 3 (functional layer) and the surface 2a of the substrate 2 to cover the functional layer 3. At the same time, the first inorganic material layer 41 (the first layer) and the first inorganic material layer 41 made of an inorganic material such as silicon nitride (SiN _x ) having a local convex portion are covered. So, like the first layer 41, a second inorganic material layer 42 (second layer) is provided. In this embodiment, the device structure 10 is constituted by a light-emitting element having an organic EL light-emitting layer.

The substrate 2 has a front surface 2a (first surface) and a rear surface 2c (second surface), and is composed of, for example, a glass substrate, a plastic substrate, or the like. The shape of the substrate 2 is not particularly limited, and is formed in a spherical shape in the present embodiment. The size, thickness, etc. of the substrate 2 are not particularly limited, and a substrate having an appropriate size and thickness is used depending on the size of the device size. In the present embodiment, a plurality of device structures 10 are fabricated from an assembly of the same devices fabricated on one large-size substrate S.

The device layer 3 (functional layer) is composed of an organic EL light emitting layer including an upper electrode and a lower electrode. In addition to this configuration, the device layer 3 is a variety of functional elements including materials that are liable to deteriorate by moisture, oxygen, such as a liquid crystal layer in a liquid crystal device or a power generation layer in a power generation device. It may be composed of.

The device layer 3 is formed on a predetermined region of the surface 2a of the substrate 2. The planar shape of the device layer 3 is not particularly limited, and is formed in a substantially spherical shape in the present embodiment, but a shape such as a circular shape or a linear shape may be adopted in addition to such a shape. The device layer 3 is not limited to an example that is disposed on the front surface 2a of the substrate 2, and may be disposed on at least one of the front surface 2a and the rear surface 2c of the substrate 2 .

The first inorganic material layer 41 (first layer) is provided on the surface 2a of the substrate 2 on which the device layer 3 is disposed, and the surface 3a and the side surface 3s of the device layer 3 ) To form a convex portion (凸部) covering. The first inorganic material layer 41 has a three-dimensional structure protruding upward in FIG. 6 from the surface 2a of the substrate 2.

The first inorganic material layer 41 is made of an inorganic material capable of protecting the device layer 3 from moisture and oxygen. In this embodiment, the first inorganic material layer 41 is made of silicon nitride (SiN _x ) excellent in water vapor barrier properties, but is not limited to this material. The first inorganic material layer 41 may be formed of another silicon compound such as silicon oxide or silicon oxynitride, or another inorganic material having water vapor barrier properties such as aluminum oxide.

The first inorganic material layer 41 is formed on the surface 2a of the substrate 2 using, for example, an appropriate mask. In this embodiment, the first inorganic material layer 41 is formed using a mask having a spherical opening having a size capable of accommodating the device layer 3. The film formation method is not particularly limited, and a CVD (Chemical Vapor Deposition) method, a sputtering method, ALD (Atomic Layer Deposition) method, or the like can be applied. The thickness of the first inorganic material layer 41 is not particularly limited, and is, for example, 200 nm to 2 µm.

The second inorganic material layer 42 (second layer), like the first inorganic material layer 41, is made of an inorganic material capable of protecting the device layer 3 from moisture and oxygen, and the first inorganic material It is provided on the surface 2a of the substrate 2 so as to cover the surface 41a and the side surface 41s of the layer 41. In this embodiment, the second inorganic material layer 42 is made of silicon nitride (SiN _x ) excellent in water vapor barrier properties, but is not limited to this material. The second inorganic material layer 42 may be formed of another silicon compound such as silicon oxide or silicon oxynitride, or another inorganic material having water vapor barrier properties such as aluminum oxide.

The second inorganic material layer 42 is formed on the surface 2a of the substrate 2 using an appropriate mask, for example. In the present embodiment, the second inorganic material layer 42 is formed using a mask having a spherical opening having a size capable of accommodating the first inorganic material layer 41. The film formation method is not particularly limited, and a CVD (Chemical Vapor Deposition) method, a sputtering method, ALD (Atomic Layer Deposition) method, or the like can be applied. The thickness of the second inorganic material layer 42 is not particularly limited, and is, for example, 200 nm to 2 μm.

The element structure 10 according to the present embodiment further includes a first resin material 51. The 1st resin material 51 is unevenly distributed around the 1st inorganic material layer 41 (convex part). In this embodiment, the 1st resin material 51 is interposed between the 1st inorganic material layer 41 and the 2nd inorganic material layer 42, and the side surface 41s of the 1st inorganic material layer 41 ) And the surface 2a of the substrate 2 are unevenly distributed at the boundary 2b. The first resin material 51 has a function of filling the gap G (FIG. 6) between the first inorganic material layer 41 formed near the boundary portion 2b and the substrate surface 2a.

In FIG. 6, the peripheral structure of the boundary portion 2b in the element structure 10 is enlarged and shown. Since the first inorganic material layer 41 is formed of a CVD film or sputtering film made of an inorganic material, the coverage characteristic of the uneven structure surface of the substrate 2 including the device layer 3 is relatively low. As a result, as shown in Fig. 6, the first inorganic material layer 41 covering the side surface 3s of the device layer 3 has a reduced coverage characteristic near the substrate surface 2a, and the coating film thickness is extremely There is a possibility that it is small, or the coating film is not present.

Therefore, in the present embodiment, by unevenly distributing the first resin material 51 in the defective covering region around the first inorganic material layer 41 as described above, moisture from the defective covering region to the inside of the device layer 3 It is designed to suppress the invasion of oxygen. In addition, when the second inorganic material layer 42 is formed, the first resin material 51 functions as an underlying layer of the second inorganic material layer 42, so that the second inorganic material layer 42 It is possible to form an appropriate film of the first inorganic material layer 41, and it becomes possible to appropriately cover the side surface 41s of the first inorganic material layer 41 with a desired film thickness.

In the forming method of the first resin material 51, the resin material vaporized by spray vaporization is supplied to the substrate surface 2a and condensed to form a resin material film 5a, and the resin material film 5a is cured. After the resin film 5 is formed, it is formed by a localization step of removing unnecessary portions.

Hereinafter, a method of manufacturing an element structure using the device for manufacturing an element structure according to the present embodiment will be described.

7 to 11 are process diagrams schematically showing a method of forming the first resin material 51 in the method of manufacturing an element structure according to the present embodiment.

(Example of device layer formation process)

First, in the device 1000 for manufacturing an element structure shown in FIG. 1, the substrate S carried from the load lock chamber 210 to the core chamber 200 is transferred to the core chamber 200 by a substrate transfer robot (not shown). It is conveyed to the functional layer forming part 204 at. In this functional layer forming portion 204, a device layer 3 (functional layer) is formed in a predetermined region on the substrate S.

In the present embodiment, as the region to be the functional layer 3, a plurality of regions on the substrate S, for example, four regions arranged at a predetermined interval, two regions each in the X-axis direction and the Y-axis direction. A region or a region serving as the singular functional layer 3 is used.

The method of forming the device layer 3 is not particularly limited, and can be appropriately selected depending on the material, configuration, and the like of the device layer 3. For example, by conveying the substrate S to the film forming chamber of the functional layer forming unit 204, etc., depositing a predetermined material on the substrate S, sputtering, etc., and further pattern processing, etc., A desired device layer 3 can be formed on a predetermined region on the substrate S. The pattern processing method is not particularly limited, and for example, etching or the like can be employed.

In addition, a detailed description of the device structure manufacturing apparatus 1000 is omitted in FIG. 1. It is possible to adopt a configuration in which the functional layer forming unit 204 is formed of a plurality of processing chambers, and has a conveying device capable of conveying the substrate S between processing chambers adjacent to each other. Alternatively, a configuration other than a vacuum device may be employed. That is, it is not necessary to pass through the load lock chamber 210, and it is possible to process the substrate S outside of the device 1000 for manufacturing an element structure.

(Example of the first layer formation process)

Next, the substrate S on which the device layer 3 is formed is carried out from the functional layer forming unit 204 by a substrate transfer robot (not shown), and the first layer forming unit 201 through the core chamber 200 Is brought in.

In the first layer forming unit 201, a first inorganic material layer 41 (first layer) is provided in a predetermined region on the substrate S including the region of the device layer 3 so as to cover the device layer 3 To form. Accordingly, the first inorganic material layer 41 covering the device layer 3 is formed on the substrate S so as to have convex portions, as shown in FIG. 7.

In this step, for example, a mask having a number of openings corresponding to the region of the first inorganic material layer 41 is used, and the first inorganic material layer 41 made of, for example, silicon nitride. May be formed as part of the protective layer.

Here, the first layer forming unit 201 can be configured to have a CVD processing device or a sputtering processing device. In addition, although not shown, in the deposition chamber of the first layer forming unit 201, a stage for arranging the substrate S, a mask disposed on the substrate S, and a mask are supported, and the substrate on the stage A mask alignment device, a film-forming material supply device, and the like are provided for aligning the mask with respect to (S).

The substrate S on which the device layer 3 is formed is disposed on the stage of the first layer forming unit 201 by a substrate transfer robot or the like disposed in the core chamber 200. The mask is disposed at a predetermined position on the substrate S so that the device layer 3 is exposed through the opening of the mask by a mask alignment device or the like.

Then, the first inorganic material layer 41 made of silicon nitride or the like is formed to cover the device layer 3 by, for example, a CVD method. In addition, the method of forming the first inorganic material layer 41 is not limited to the CVD method, and for example, a sputtering method may be employed. In this case, the first layer forming portion 201 is configured to have a sputtering device.

(Example of resin material formation process-film formation process)

Next, the substrate S on which the first inorganic material layer 41 having convex portions is formed is carried out from the first layer forming portion 201 by a substrate transfer robot (not shown), and the core chamber 200 ) Is carried into the resin film-forming unit 100.

The resin film-forming unit 100 includes a step of forming a resin material film 5a on the substrate S on which the first inorganic material layer 41 is formed, and curing the resin material film 5a to form the resin film 5. Perform the step of forming. In this step, first, a resin material film 5a made of, for example, an ultraviolet curable acrylic resin material is formed using the resin film forming unit 100.

In the resin film-forming part 100, first, the board|substrate S carried in the resin film-forming part 100 is mounted on the stage 102. Before the substrate S is carried into the chamber 110, the gas in the chamber 110 is evacuated by the vacuum evacuation device and the inside of the chamber 110 is maintained in a vacuum state. In addition, when the substrate S is carried into the chamber 110, the vacuum state of the chamber 110 is maintained.

At this time, the chamber 110 is set so that at least the temperature on the inner surface side of the upper space 107 (US) and the lower space 108 is equal to or higher than the vaporization temperature of the resin material by a heating device. At the same time, the substrate S disposed on the stage 102 is cooled together with the stage 102 to a temperature lower than the vaporization temperature of the resin material by the substrate cooling device 102a.

Further, the resin material supply pipe 112 (first pipe) is heated to a temperature equal to or higher than the vaporization temperature of the resin material by the heater 112d.

Next, on the substrate S disposed on the stage 102, a mask (not shown) may be disposed at a predetermined position on the substrate S by a mask placing device or the like.

Next, after the conditions such as the mask alignment state, the atmosphere in the chamber 110, the temperature of the inner wall of the chamber 110, and the temperature of the substrate S become a predetermined state, the resin material vaporized in the vaporizer 300 is used in the chamber ( 110).

The vaporized resin material supplied from the vaporizer 300 is supplied from the upper space 107 to the lower space 108 through the shower plate 105.

In the lower space 108, the vaporized resin material supplied almost evenly to the entire surface of the substrate S by the shower plate 105 is condensed on the substrate surface 2a, as shown in FIG. It becomes the liquid film 5a. In the liquid film 5a condensed on the substrate surface 2a, in the corners, recesses, gaps, etc. having a heat angle on the substrate surface 2a, due to surface tension, The thickness of the liquid film 5a is increased.

At this time, the liquid film 5a may be formed only in the same region as the portion close to the convex portion 41 (a position in the vicinity) by a mask not shown. In addition, it is preferable to control the supply amount of the resin material supplied from the vaporizer 300 in consideration of the dropping of the resin material and the film formation rate. The resin material that has been frosted on the surface of the substrate (S) is squeezed into fine gaps due to a capillary phenomenon, or is further agglomerated by the surface tension of the resin material, smoothing fine irregularities on the substrate (S). While doing this, it becomes possible to form the liquid film 5a (resin material film). Accordingly, the thickness of the liquid film 5a is increased in the corner portions, concave portions, gap portions, and the like having a heat angle on the substrate surface 2a. In particular, a minute gap in the boundary portion 2b between the side surface 41s of the first inorganic material layer 41 and the surface 2a of the substrate 2 can be filled with the liquid film 5a.

In addition, some of the vaporized resin material adheres to the surface of the inner wall of the chamber 110 and the like, but vaporizes again without condensation on the heated inner wall or the like.

After a predetermined processing time has elapsed, a liquid resin material film 5a having a predetermined thickness is formed on the surface of the substrate S, and then the supply of the resin material from the vaporizer 300 is stopped. Subsequently, the surface of the substrate S is irradiated with ultraviolet rays from the UV irradiation apparatus 122 while maintaining the vacuum atmosphere in the chamber 110. The irradiated ultraviolet rays pass through the top plate 120 and the shower plate 105 made of an ultraviolet-transmitting material such as quartz and reach onto the substrate S in the chamber 110.

Part of the ultraviolet rays irradiated toward the substrate S in the chamber 110 enters the surface of the substrate S, and a liquid film 5a made of a resin material formed on the surface of the substrate S (resin material film) A photopolymerization reaction occurs, and the liquid film 5a is cured. As shown in Fig. 9, a resin film 5 is formed on the surface of the substrate S. In this embodiment, a thin film of acrylic resin is formed. Next, a mask (not shown) is moved from the film formation position on the substrate S to the retreat position by a mask mounting device or the like.

(Example of resin material formation process ~ localization process)

Next, the substrate S on which the resin film 5 is formed is carried out from the resin film forming unit 100 by a substrate transfer robot (not shown) and carried into the localization processing unit 202 through the core chamber 200. .

Here, the localization processing unit 202 has the configuration shown in FIG. 3 as described above. In the localization processing unit 202, plasma etching processing is performed. Here, the resin film 5 is anisotropically etched by ions in plasma generated by an etching gas such as oxygen. At this time, the ions are drawn in anisotropically toward the substrate S on the electrode. Therefore, by detecting the fluctuation of the bias voltage Vpp applied to the electrode, it is determined that the resin film 5 on the substrate S is almost removed by the change (detection result) of the detected bias voltage Vpp. , The processing is terminated as the end point of the etching process.

In addition, when the above-described first layer forming portion 201 or second layer forming portion 203 has a sputtering apparatus or plasma CVD apparatus, these forming portions 201 and 203 not only have a film forming function, but also It can have the function of the goods processing unit 202. In this case, it is possible to use the same processing apparatus as the first layer forming unit 201, the second layer forming unit 203, and the localization processing unit 202, for example.

As shown in FIG. 11, the 1st resin material 51 remaining on the board|substrate S by this dry etching process is the side surface 41s of the 1st inorganic material layer 41, and the surface of the board|substrate 2 ( It is localized (exists locally) at the border (2b) with 2a). In addition, the first resin material 51 distributes fine irregularities on the surface of the first inorganic material layer 41 in a smoothable portion.

(Example of the second layer formation process)

The substrate S formed by the localization of the first resin material 51 is carried out from the localization processing unit 202 by a substrate transfer robot (not shown), and a second layer is formed through the core chamber 200 It is brought into the unit 203.

In the second layer forming portion 203, the second inorganic material layer 42 is formed in a predetermined region on the substrate S including the convex portion so as to cover the first inorganic material layer 41 on which the first resin material 51 is formed. ) (Second layer) is formed.

In this step, similarly to the first inorganic material layer 41, a mask having a number of openings corresponding to the region of the second inorganic material layer 42 is used, and the same material as the first inorganic material layer 41 is used. Or, for example, a second inorganic material layer 42 (second layer) made of silicon nitride is formed. Accordingly, the device layer 3 (functional layer) by the first inorganic material layer 41 (first layer), the first resin material 51, and the second inorganic material layer 42 (second layer) And can function as a protective layer for protecting the device layer 3.

Here, the second layer forming unit 203 can be configured to have a CVD processing device or a sputtering processing device.

The second layer forming unit 203 may have a device configuration similar to that of the first layer forming unit 201 described above. For example, as the first layer forming unit 201 and the second layer forming unit 203, the same processing device is used, or the second layer forming unit 203 is the first layer forming unit 201 It is possible to combine the functions of.

In addition, when the second layer forming unit 203 is a plasma CVD processing apparatus, it can also have the function of the localization processing unit 202. When the first resin material 51 is localized in the second layer forming unit 203, the second inorganic material layer 42 (the second layer) can be formed as it is after the localization.

Thereafter, the substrate S on which the second inorganic material layer 42 is formed is carried out from the second layer forming unit 203 by a substrate transfer robot (not shown), and the core chamber 200 and the load lock chamber 210 are removed. It is carried out to the outside of the device 1000 for manufacturing a device structure.

In the device structure manufacturing apparatus 1000 according to the present embodiment, after forming the resin film 5 in the resin film forming unit 100, the first resin localized by the plasma etching treatment in the localization processing unit 202 The ash 51 is formed. Thereafter, by forming a second inorganic material layer 42 (second layer), a second inorganic material layer 42 (second layer) at a location where barrier property as a protective layer is required, such as the boundary portion 2b. It becomes possible to reliably form. In addition, the bias voltage (Vpp) applied to the electrode 226 from the high frequency power source 227 is measured by the bias voltage sensor 229 serving as a detection device, and according to the change in the measured value, the resin on the substrate S It is determined that the unnecessary portion of the film 5 has been removed. Based on the determination result (detection result), the resin film 5 in the flat portion can be accurately removed by ending the etching process. For this reason, it becomes possible to shorten the time required for the film forming step, stabilize film characteristics, and prevent fluctuations in film characteristics.

Hereinafter, another example of the element structure manufactured by the element structure manufacturing apparatus 1000 according to the present embodiment will be described.

In the device structure 10 in this example manufactured by the device structure manufacturing apparatus 1000 according to the present embodiment, a resin material is placed in the boundary 2b around the first inorganic material layer 41 (convex part). It is not limited only to the structure that is unevenly distributed, for example, the resin material may remain on the surface 2a of the substrate 2 other than the boundary 2b or the surface 41a of the first inorganic material layer 41. Do.

In this case, the second inorganic material layer 42 (the second layer) has a region laminated on the first inorganic material layer 41 via the second resin material 52 as shown in FIG. 12. The second resin material 52 is interposed between the first inorganic material layer 41 and the second inorganic material layer 42, and independently of the first inorganic material layer 41 It is unevenly distributed on the surface 41a. Even in this case, since the adhesion between the first inorganic material layer 41 and the second inorganic material layer 42 can be maintained, the barrier properties of the element structure 10 are not impaired.

As described above, according to the device structure 10 according to the present embodiment, the side surfaces of the device layer 3 are the first inorganic material layer 41 (the first layer) and the second inorganic material layer 42 (the second layer). ), it is possible to prevent intrusion of moisture or oxygen into the device layer 3.

In addition, according to the present embodiment, since the first resin material 51 is unevenly distributed in the boundary portion 2b, the barrier characteristics due to the poor coverage of the first inorganic material layer 41 or the second inorganic material layer 42 Deterioration can be prevented, and stable device characteristics can be maintained over a long period of time.

Hereinafter, another example of the element structure manufactured by the element structure manufacturing apparatus 1000 according to the present embodiment will be described.

The device structure 20 according to this example further includes a second resin material 52 interposed between the first inorganic material layer 41 and the second inorganic material layer 42 as shown in FIG. 13. The second resin material 52 is unevenly distributed on the surface of the first inorganic material layer 41 independently of the first resin material 51.

In the element structure 20 according to the present example, the surface of the first inorganic material layer 41 is not necessarily flat, and for example, particles are formed before film formation (when conveying the substrate or before input to the film forming apparatus) or during film formation. The case where (P) is mixed in the film and irregularities are formed is illustrated. When particles are mixed in the first inorganic material layer 41, the coverage characteristic of the first inorganic material layer 41 with respect to the device layer 3 is deteriorated, and there is a fear that a desired barrier characteristic cannot be obtained.

Thus, the element structure 20 according to the present example has a structure in which the second resin material 52 is filled in the defective covering portion of the first inorganic material layer 41 caused by mixing of particles P or the like. Typically, the second resin material 52 is unevenly distributed in the boundary portion 32b between the surface of the first inorganic material layer 41 and the main surface of the particle P. Accordingly, the coating property of the device layer 3 is increased, and the second resin material 52 functions as a base, thereby enabling the appropriate film formation of the second inorganic material layer 42.

The second resin material 52 is formed by a method similar to that of the first resin material 51. The second resin material 52 may be made of the same resin as the first resin material 51. In this case, the first resin material 51 and the second resin material 52 can be formed simultaneously in the same process.

Here, in the localization processing unit 202, a portion in which a resin material such as a flat portion is formed thinly is removed, and the first inorganic material layer 41 is exposed. At this time, the resin material formed in the periphery of the particle P or the like remains thick because it is formed. When looking at the device structure 20 in the vertical direction from above, the area of the flat portion is overwhelmingly larger than the area of the resin material formed around the particles, so after the resin material having a thin flat portion is removed, the amount of etching is It greatly decreases, and the reaction by etching decreases rapidly. At this time, the pressure changes and the bias voltage changes. In this example, it is considered that when the etching of the flat portion is completed, the generation of gas due to the etching decreases, the pressure decreases (the plasma density decreases), and the bias voltage increases.

At this time, the resin film 5 is not removed from the boundary portion 2b and the resin film 5 is localized to form the first resin material 51. Likewise, the resin film 5 is not removed from the boundary portion 32b, and the resin film 5 is localized to form the second resin material 52.

In this example, similarly to the manufacture of the element structure 10 described above, the bias voltage Vpp applied to the electrode 226 from the high frequency power supply 227 is measured by the bias voltage sensor 229 serving as a detection device, It is determined that the unnecessary portion of the resin film 5 on the substrate S has been removed according to the change in the measured value. Based on the determination result, by ending the etching process, the resin film 5 can be accurately removed and the first inorganic material layer 41 (first layer) in the flat portion can be reliably exposed. In addition, over-etching of the resin material 53 to be unevenly distributed can be prevented. In addition, according to this example, since the decrease in film quality due to the incorporation of particles P can be compensated for by the second resin material 52, it is possible to improve productivity while securing desired barrier properties.

Hereinafter, another example of the element structure manufactured by the element structure manufacturing apparatus 1000 according to the present embodiment will be described.

The device structure 30 according to the present example has, for example, a substrate 21 having a device layer 3 (functional layer) and a side surface 3s of the device layer 3 as shown in FIG. 14. A first inorganic material layer 41 (first layer) and a second inorganic formed on the surface of the substrate 21 so as to cover the convex portion 40 to be covered, the convex portion 40 and the device layer 3 It has a material layer 42 (second layer).

The convex portion 40 is formed on the surface 21a of the substrate 21 and has a concave portion 40a for accommodating the device layer 3 in the central portion. In this example, although the bottom surface of the concave portion 40a is formed at a position higher than the surface 21a of the substrate 21, it may be formed at the same height as the surface 21a, and more than the surface 21a It can be formed in a low position.

The device structure 30 according to this example further has a resin material 53 interposed between the first inorganic material layer 41 and the second inorganic material layer 42. The resin material 53 is a boundary portion 21b between the outer surface of the convex portion 40 and the surface 21a of the substrate 21, and a boundary portion 22b between the inner surface of the convex portion 40 and the device layer 3 ), respectively. Accordingly, defects in covering the first inorganic material layer 41 and the second inorganic material layer 42 to the convex portion 40 and the surface 3a of the device layer 3 can be suppressed, thereby improving barrier properties. You can plan. The resin material 53 may be formed by a method similar to the first resin material 51 and the second resin material 52 described above.

In this way, in the substrate S having irregularities, portions that cannot be covered by the inorganic material layers 41 and 42 are flattened by the unevenly distributed resin materials 51, 52, 53. The inorganic material layers 41 and 42 to be formed on the resin material can be formed more uniformly and with good coverage. In addition, the resin materials 51, 52, 53 have lower seals for water and the like than the inorganic material layers 41, 42, but the unevenly distributed resin materials 51, 52, 53 have an inorganic material layer 41 , 42), so that it is not exposed to the external atmosphere, the sealability is improved. In other words, it is preferable to unevenly distribute the resin materials 51, 52, 53 so that they are not exposed to the external atmosphere, not in a film shape.

In the above, preferred embodiments of the present invention have been described and described above, but these are illustrative of the present invention and should not be considered as limiting. Additions, omissions, substitutions, and other changes can be made without departing from the scope of the present invention. Accordingly, the present invention should not be regarded as being limited by the foregoing description, but is limited by the claims.

For example, in the above embodiment, the second inorganic material layer 42 (the second layer) covering the first inorganic material layer 41 (the first layer) is composed of a single layer, but the second inorganic material layer (42) (2nd layer) may consist of a multilayer film. In this case, a resin material may be supplied on the substrate for each step of forming a film to form a resin material that is unevenly distributed in the uneven portions of the substrate, thereby further improving the barrier properties.

In addition, in the above embodiment, after the formation of the first inorganic material layer 41 (first layer), the first resin material 51 was localized around the first inorganic material layer 41 to be convex. Before the formation of the first inorganic material layer 41 by the first layer forming unit 201, the first resin material is formed around the device layer 3 by the resin film forming unit 100 and the localization processing unit 202. It is okay to ubiquitous (51). Accordingly, the coating efficiency of the device layer 3 by the first inorganic material layer 41 can be improved.

As an application example of the present invention, sealing of an organic EL device and sealing of an electronic device are mentioned.

S, 2, 21: substrate
2b, 21b, 22b, 32b: boundary
3: Device layer (functional layer)
5: resin film
5a: resin material film
10, 20, 30: device structure
40: convex
41: first inorganic material layer (first layer)
42: second inorganic material layer (second layer)
51, 53: first resin material
52: second resin material
100: resin film formation part (film formation chamber)
102: stage
105: shower plate
102a: substrate cooling device
112: resin material supply pipe (first pipe)
112V: valve
113: resin material bypass pipe (second pipe)
113V: valve
122: UV irradiation device
130: vaporization tank (氣化槽)
132: discharge part
135: heating part
140: resin material liquid supply pipe
150: resin material raw material container
200: core thread
201: first layer formation unit (film formation chamber)
202: Localization processing unit
222: chamber
223: gas introduction pipe
224: high frequency power
225: antenna
226: electrode
227: high frequency power supply
228: pressure control valve
229: bias voltage sensor (detector)
203: second layer formation portion (film formation chamber)
204: functional layer forming unit (film formation chamber)
210: loadlock room
300: vaporizer
400: control unit
1000: device for manufacturing an element structure

Claims (3)

A resin material forming step of forming a resin material made of an organic material on a substrate with irregularities so that at least the periphery of the convex portion is thicker than the flat portion;
A resin material etching process of unevenly distributing the resin material to the boundary by removing a portion of the resin material positioned at the boundary between the convex portion and the flat portion, and removing the resin material on the flat portion
Including,
The resin material etching process,
Among the conditions for etching the resin material, a change in a specific condition is detected, and the detected detection result is used as an end point of the etching treatment.
Method of manufacturing a device structure. The method of claim 1,
The change in the above specific conditions,
Which is the change in bias voltage applied to the substrate
Method of manufacturing a device structure. The method according to claim 1 or 2,
After the resin material etching process,
Inorganic film formation process of forming an inorganic material layer made of an inorganic material on the substrate on which the resin material remains
Method of manufacturing a device structure further comprising a.

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