KR102280264B1 - Chemical vapor deposition apparatus and method of manufacturing display apparatus using the same - Google Patents

Abstract

The present invention provides a chemical vapor device capable of depositing without rotating a substrate during a deposition process of a deposition film and a method of manufacturing a display device using the same, a chamber including a chamber and a lower chamber, and a susceptor disposed in the chamber and supporting the substrate ( susceptor), a gas injection unit disposed on the susceptor and supplying a process gas for film formation to the substrate, a space separation unit disposed in the chamber and dividing the chamber and the chamber, and supplying gas into the chamber It provides a chemical vapor deposition apparatus having a gas supply unit.

Description

Chemical vapor deposition apparatus and method of manufacturing a display apparatus using the same

The present invention relates to a chemical vapor deposition apparatus and a method for manufacturing a display apparatus using the same, and more particularly, to a chemical vapor deposition apparatus capable of depositing without rotating a substrate during a deposition process of a deposition film, and a method of manufacturing a display apparatus using the same.

An organic light emitting display device includes an organic light emitting device having an intermediate layer having a multilayer structure including a light emitting layer between a pixel electrode and a counter electrode facing the pixel electrode. Since the organic light emitting diode is vulnerable to external moisture or impurities, a thin film encapsulation layer capable of protecting it is formed on the organic light emitting element. When manufacturing such an organic light emitting display device, a deposition method may be used to form a thin film encapsulation layer. When an organic light emitting display device is manufactured using a deposition method, a chemical vapor deposition (CVD) device is used.

When a chemical vapor deposition apparatus is used, a substrate to be deposited is placed on a susceptor of the chemical vapor deposition apparatus, a reaction gas is supplied into the chamber, a chemical reaction occurs, and a reaction product is deposited on the substrate to form a deposition film. .

Among these chemical vapor deposition apparatuses, plasma enhanced chemical vapor deposition (PECVD) is a method of forming a film of nitride or oxide on a substrate, supplying a source gas on the substrate to be formed into a film, and external energy (plasma) It is a technology that decomposes the raw material gas by applying

However, in such a conventional chemical vapor deposition apparatus and a method of manufacturing a display apparatus using the same, there is a problem in that, when an organic film and an inorganic film are alternately formed, deposition must be performed while rotating the substrate alternately according to the arrangement of the nozzles.

An object of the present invention is to solve various problems including the above problems, and an object of the present invention is to provide a chemical vapor deposition apparatus capable of depositing without rotating a substrate during a deposition process of a deposition film, and a method of manufacturing a display device using the same. However, these problems are exemplary, and the scope of the present invention is not limited thereto.

According to one aspect of the present invention, a chamber including a chamber and a lower chamber, a susceptor disposed in the chamber and supporting a substrate, is disposed on the susceptor and supplies a process gas for film formation to the substrate A gas injection unit that is disposed in the chamber, a space separation unit for partitioning the chamber and the lower chamber, and a gas supply unit for supplying gas into the chamber, a chemical vapor deposition apparatus is provided.

The chamber may further include a mask disposed between the substrate and the gas injection unit and aligned with the substrate.

It is disposed in the chamber to adjust the pressure of the lower chamber and the lower chamber, may further include a pressure control unit.

The pressure regulator may be disposed in the loss.

A portion of the susceptor on which the substrate is disposed may have a curved surface.

A curved surface of the susceptor may be convex toward a direction in which the gas injection unit is disposed.

The space separation unit may have a shape in which a central portion is opened according to the size of the mask.

The gas supply unit may supply a process gas to the lower chamber of the chamber.

According to another aspect of the present invention, preparing a substrate, placing the substrate between the susceptor and the mask in the chamber, the susceptor moves in the direction in which the mask is arranged, so that the outer edge of the mask is in contact with the space separation unit There is provided a method of manufacturing a display device, comprising the steps of isolating a space inside the chamber, and forming a deposition layer on a substrate by injecting a gas through a gas injection unit disposed below the mask.

The method may further include forming a vacuum inside the chamber and disposing a mask inside the chamber.

The disposing of the substrate may include disposing the substrate in close contact with the lower surface of the susceptor.

Separating the space inside the chamber may be a step in which the space inside the chamber is divided into a lower chamber and a lower chamber by a space separating unit.

The step of forming the deposition layer on the substrate includes injecting a gas into the lower chamber of the chamber through a gas injection unit disposed below the mask and injecting a gas for pressure control into the chamber through a pressure control unit disposed in the chamber. may include steps.

Other aspects, features and advantages other than those described above will become apparent from the following drawings, claims, and detailed description of the invention.

These general and specific aspects may be practiced using systems, methods, computer programs, or any combination of systems, methods, and computer programs.

According to an embodiment of the present invention made as described above, a chemical vapor deposition apparatus capable of depositing without rotating a substrate during a deposition process of a deposition film and a method of manufacturing a display apparatus using the same can be implemented. Of course, the scope of the present invention is not limited by these effects.

1 is a cross-sectional view schematically showing a state before operation of a chemical vapor deposition apparatus according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view schematically illustrating a state during operation of the chemical vapor deposition apparatus of FIG. 1 .
3 is a cross-sectional view schematically showing a part of a chemical vapor deposition apparatus according to another embodiment of the present invention.
4 is a cross-sectional view schematically illustrating an organic light emitting display device manufactured according to a method of manufacturing a display device according to another embodiment of the present invention.

Since the present invention can apply various transformations and can have various embodiments, specific embodiments are illustrated in the drawings and described in detail in the detailed description. Effects and features of the present invention, and a method of achieving them, will become apparent with reference to the embodiments described below in detail in conjunction with the drawings. However, the present invention is not limited to the embodiments disclosed below and may be implemented in various forms.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, and when described with reference to the drawings, the same or corresponding components are given the same reference numerals, and the overlapping description thereof will be omitted. .

Since the present invention can apply various transformations and can have various embodiments, specific embodiments are illustrated in the drawings and described in detail in the detailed description. Effects and features of the present invention, and a method of achieving them, will become apparent with reference to the embodiments described below in detail in conjunction with the drawings. However, the present invention is not limited to the embodiments disclosed below and may be implemented in various forms.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, and when described with reference to the drawings, the same or corresponding components are given the same reference numerals, and the overlapping description thereof will be omitted. .

In the following embodiments, terms such as first, second, etc. are used for the purpose of distinguishing one component from another, not in a limiting sense. Also, the singular expression includes the plural expression unless the context clearly dictates otherwise.

On the other hand, terms such as include or have means that the features or components described in the specification are present, and the possibility of adding one or more other features or components is not excluded in advance. In addition, when a part of a film, region, component, etc. is said to be "on" or "on" another part, not only when it is "on" or "immediately on" another part, but also another film in the middle; The case where a region, a component, etc. are interposed is also included.

In the drawings, the size of the components may be exaggerated or reduced for convenience of description. For example, since the size and thickness of each component shown in the drawings are arbitrarily indicated for convenience of description, the present invention is not necessarily limited to the illustrated bar.

The x-axis, y-axis, and z-axis are not limited to three axes on a Cartesian coordinate system and may be interpreted in a broad sense including them. For example, the x-axis, y-axis, and z-axis may be orthogonal to each other, but may refer to different directions that are not orthogonal to each other.

Where certain embodiments are otherwise feasible, a specific process sequence may be performed different from the described sequence. For example, two processes described in succession may be performed substantially simultaneously, or may be performed in an order opposite to the order described.

1 is a cross-sectional view schematically showing a preparation state before operation of a chemical vapor deposition apparatus 1 according to an embodiment of the present invention, and FIG. 2 is a schematic view of a state during operation of the chemical vapor deposition apparatus 1 of FIG. It is a cross-sectional view shown by The chemical vapor deposition apparatus 1 shown in FIG. 2 has a structure in which the susceptor 20 moves downward and the chamber 10 is divided into a lower chamber 10a and a lower chamber 10b.

1 and 2 , a chemical vapor deposition apparatus 1 according to an embodiment of the present invention includes a chamber 10 , a susceptor 20 positioned in the chamber 10 , a mask 30 and , a space separation unit 40 , a gas injection unit 50 , and a gas supply unit 60 for supplying gas into the chamber 10 .

Referring to FIG. 1 , the chemical vapor deposition apparatus 1 in a pre-operational state includes a chamber 10 including a susceptor 20 and a mask 30 . Chamber 10 includes a chamber (10a) and a lower chamber (10b), as shown in Figure 1, before operation, the chamber (10) in the chamber (10) the chamber (10a) and the lower chamber (10b) is spatially not completely separated open has a structured structure. This is because the susceptor 20 is positioned in an elevated state before operation and is disposed to be spaced apart from the space separation unit 40 .

Referring to FIG. 2 , the chamber 10 of the chemical vapor deposition apparatus 1 during operation is divided into a chamber 10a and a chamber 10b. The chamber 10 has a chamber 10a and a lower chamber 10b, and the chamber 10a and the lower chamber 10b are mutually coupled to define a space in which deposition is performed. The inner space of the chamber 10 divided into the chamber 10a and the lower chamber 10b may be shielded from the outside and maintained in a vacuum atmosphere. Of course, the inside of the chamber 10 may be opened for maintenance. As shown in FIG. 2 , the susceptor 20 comes into contact with the space separation unit 40 while descending, and thus the upper chamber 10a and the lower chamber 10b are spatially separated by the space separation unit 40 . The upper chamber (10a) and the lower chamber (10b) are mutually sealed to maintain a vacuum atmosphere, respectively. The vacuum atmosphere of the upper chamber (10a) and the lower chamber (10b) is the air trapped inside the chamber (10a) and the lower chamber (10b) by the exhaust parts (13a, 13b) respectively located in the upper chamber (10a) and the lower chamber (10b). is formed when it is released to the outside.

The chamber (10a) may be provided with a pressure adjusting unit (11) for controlling the pressure inside the chamber (10a). As the gas is supplied to the lower chamber 10b by the gas supply unit 60, the pressure adjusting unit 11 prevents the pressure difference between the upper chamber 10a and the lower chamber 10b from occurring, thereby preventing the upper chamber 10a and the lower chamber (10b) from occurring ( 10b) may serve to supply gas to the inside of the chamber 10a so as to maintain the same pressure. In addition, a passage 19 may be disposed in the chamber 10a, which is a passage through which the substrate S to be deposited is inputted or discharged by a transfer robot or the like. This passage 19 may be opened or blocked by a gate valve (not shown).

As described above, the pressure adjusting unit 11 disposed in the chamber 10 to adjust the pressure of the upper chamber 10a and the lower chamber 10b may be located. The pressure control unit 11 may be located in the chamber 10a, which is a space separation between the chamber 10a and the chamber 10b in the process of depositing a deposition film on the substrate S, as shown in FIG. 2 . When the unit 40 and the mask 30 in contact with it are sealed, the pressure of the lower chamber 10b is increased by the reaction gas supplied to the lower chamber 10b. In this case, in order to prevent the gas injected into the lower chamber 10b from moving to the lower chamber 10a, it is necessary to adjust the pressures of the lower chamber 10a and the lower chamber 10b to the same level. _{Therefore, by injecting a stabilizing gas, such as nitrogen (N 2} ), argon (Ar), for example, from the pressure control unit 11 located in the chamber 10a, the chamber 10a can induce the same pressure as the chamber 10b can

Also, the alignment part 15 may be positioned outside the chamber 10 . The alignment unit 15 may be installed on the upper surface of the chamber 10 , and may have an optical structure for aligning the alignment key of the substrate S with the alignment key of the mask 30 . This is achieved through XY-theta control of the stage 23, which will be described later, by an algorithm while aligning the key with a vision to align the alignment key of the substrate S and the alignment key of the mask 30 ± the error range. It can be aligned to 5 μm or less.

On the other hand, the chamber 10 includes a susceptor 20 for heating or cooling the substrate (S). The susceptor 20 is located in the chamber 10a in the chamber 10 , and the substrate S on which deposition is to be performed may be supported under the susceptor 20 . The susceptor 20 typically has a larger shape than the area of the substrate S to be deposited. A heater (not shown) may be mounted inside or below the susceptor 20 to heat the susceptor 20 to about several hundred degrees Celsius and maintain this temperature so that deposition can be performed smoothly.

This susceptor 20 may be lifted or lowered by the elevating unit 21 at the lower portion thereof. For example, when the substrate S is introduced into the chamber 10 through the passage 19 , the susceptor 20 descends and is positioned below the chamber 10a. At this time, the substrate fixing part 27 descends through a through hole (not shown) penetrating the susceptor 20 and protrudes to the lower surface of the susceptor 20, and the transfer robot moves the substrate S to the substrate fixing part ( 27) and then exits through the passageway (19). Thereafter, the substrate fixing part 27 is lowered and the substrate S is seated on the susceptor 20 . Thereafter, the susceptor 20 is lowered by the elevating unit 21 so that the substrate S is positioned adjacent to the gas injection unit 50 to be described later, so that deposition is performed on the substrate S. . In addition, in order to prevent the susceptor 20 supporting the substrate S from sagging, it may have a susceptor frame (not shown) coupled to the elevating part 21 to support the susceptor 20 .

Meanwhile, a precision stage 23 for controlling X-Y-Theta for aligning the substrate S and the mask 30 may be positioned on the susceptor 20 . Through the X-Y-theta control of the stage 23, the error range can be aligned to ±5 μm or less.

Meanwhile, the mask 30 may be positioned under the susceptor 20 in the chamber 10 . The mask 30 may be disposed between the substrate S disposed on the lower surface of the susceptor 20 and the gas injection unit 50 , and may be aligned with the substrate S. The mask 30 may be formed of, for example, a metal, and a patterned deposition film may be deposited on the substrate S using the mask 30 .

On the other hand, in the chamber 10, a space separation unit 40 that divides the lower chamber 10a and the lower chamber 10b of the chamber 10 may be located. The space separation unit 40 may have a shape in which the center portion is opened so that the mask 30 is disposed. That is, the space separation unit 40 is formed along the inner wall of the chamber 10 , and as the susceptor 20 moves downward, the edge of the mask 30 contacts the space separation unit 40 , thereby forming the chamber 10 . It is possible to separate the inner space of the lower chamber (10a) and the lower chamber (10b). Through this, even when the plasma process is performed in the chamber 10b, it is possible to prevent contamination inside the chamber 10a due to the introduction of reactive species into the chamber 10a.

On the other hand, in an embodiment of the present invention, the lower electrode gas injection unit 50 is disposed in the lower chamber (10b). The gas injection unit 50 allows deposition on the substrate S through interaction with the susceptor 20 .

The gas injection unit 50 includes a gas distribution plate 51 located in the direction of the susceptor 20 and a backing plate located in a direction opposite to the direction in which the susceptor 20 is located with respect to the gas distribution plate 51 . (53, backing plate). A space may exist between the gas distribution plate 51 and the backing plate 53 , and for this purpose, the support member 57 may be interposed between the gas distribution plate 51 and the backing plate 53 .

The gas distribution plate 51 is located under the susceptor 20 on which the substrate S to be deposited is disposed, and a plurality of vent holes (not shown) for supplying a reaction gas to the lower surface of the substrate S to be deposited. city) has Accordingly, as described above, after the substrate S is seated under the susceptor 20 , the susceptor 20 is lowered by the elevating unit 21 so that the substrate S is adjacent to the gas distribution plate 51 . When disposed, the reaction gas or the like is supplied to the lower surface of the substrate S through the plurality of vent holes of the gas distribution plate 51 to be deposited on the substrate S.

The backing plate 53 is electrically connected to a high frequency power supply (not shown). When the backing plate 53 contacts the chamber 10, electricity can flow in the chamber 10, and between the backing plate 53 and the lower chamber 10b, the backing plate 53 and the lower chamber 10b are energized. An insulator (not shown) may be interposed therebetween.

A gas supply unit 60 capable of supplying a reaction gas or a cleaning gas into the chamber 10 is disposed at a lower portion of the chamber 10b. The gas supplied from the gas supply unit 60 is supplied to the space between the gas injection unit 50 and the susceptor 20 through a plurality of vent holes of the gas distribution plate 51 .

Of course, in addition to this configuration, other components such as a pump (not shown) for making the internal space of the chamber 10 into a vacuum in the chemical vapor deposition apparatus 1 may be disposed as needed.

Meanwhile, the gas injection unit 50 serves as a plasma generating source and a reactive species source, and the gas supply unit 60 indicates that a precursor, a reactive gas, and a transport gas are supplied. Through the above configuration, the electrons and gas ejection unit 50 that are emitted by the discharge generated inside the gas ejection unit 50 while the reactant, reactive gas and transport gas are introduced into the chamber 10 through the gas supply unit 60 . ) is decomposed into reactive species (radical), ions, etc. by plasma generated in the inner region and then adsorbed on the surface of the substrate (S). In this case, the structures of the gas injection unit 50 and the mask 30 are important when generating plasma, and if the gas injection unit 50 and the mask 30 do not form a symmetrical structure, an abnormal discharge may be formed. Therefore, in an embodiment of the present invention, a structure for planarizing the surface of the mask 30 is applied as shown in FIG. 2 , and through this, abnormal discharge in the gas supply unit can be suppressed.

3 is a cross-sectional view schematically showing a part of the chemical vapor deposition apparatus 1 according to another embodiment of the present invention.

As described above, even if the alignment of the substrate S and the mask 30 is successful, accurate patterning may not be formed when reactive species penetrate into the gap between the substrate S and the mask 30 during film formation. Therefore, as shown in FIG. 3 , the bonding between the substrate S and the mask 30 can be maximized by applying a structure having a curved shape with the susceptor 20 as the center. Preferably, the radius of curvature of the susceptor 20 may be formed in a range of 10 to 500 mm, but is not necessarily limited thereto.

Accordingly, the substrate S that is in close contact with the lower surface of the susceptor 20 having a curved shape and the mask 30 aligned with the substrate S are also curved along the curved surface of the susceptor 20 in a curved shape. , in this case, it is possible to maximize the adhesion between the substrate S and the mask 30 to prevent the reaction gas from penetrating between the substrate S and the mask 30 .

In general, an inorganic film (SiN or SiON) applied as an inorganic layer among thin film encapsulation of an organic light emitting display may be formed on the organic light emitting device using a plasma process such as ICP-CVD or PECVD. It is necessary to selectively form a film due to the need to form a large number of cells as the substrate becomes larger in area. However, because a metal material such as a patterned metal mask sheet enters the plasma, it affects the plasma distribution and can form a uniform film formation. In addition, due to the relationship between the substrate and the bonded mask metal plate, reactive species permeate and form a film, so there was no choice but to limit the formation of a perfect patterning film. In order to overcome this problem, it is difficult to apply it as a mass production technology due to the relationship of film formation by mask taping on areas where film formation is unnecessary. In addition, when the in-line connection method that connects the front and rear processes is applied, the film formation method is a process method (Face-Down method) opposite to the organic light emitting device deposition method (Face-Up method), which is the previous static method. Due to the relationship, it has an unreasonable point in the line configuration because it has to have a flip function that rotates the substrate 180 degrees during vacuum transfer.

Accordingly, the present invention relates to a chemical vapor deposition apparatus (1) for forming precise patterning by forming a film in the mask (30) after bonding with the substrate (S) using a metal mask (30) and a method for manufacturing a display apparatus using the same will be. As described above, a mask 30 capable of patterning is installed in the inner space of the chamber 10, and the mask 30 alignment key and the mask 30 alignment key of the substrate S are used to form the substrate. After aligning (S) and the mask 30, the substrate S or the mask 30 moves up and down and adheres, and then a film formation process by chemical vapor deposition may be performed.

Also, this is a structure in which a face-up film formation method is applied instead of the existing face-down film formation method, and thus the gas supply unit and the susceptor 20 may be disposed opposite to the existing equipment.

In addition, in order to prevent damage to the susceptor 20, etc. when supplying a self-cleaning gas during the chemical vapor deposition process, the chamber 10 may be configured in a structure that can be separated into a chamber 10a and a chamber 10b. can In addition, the surface of the susceptor 20 is controlled so that reactive species do not penetrate into the gap between the substrate S and the mask 30 bonded during the film forming process and form a film, and the metal mask 30 is contained in the plasma generated in the chamber 10 . ) may include a method of aligning the mask 30 to minimize the discharge unevenness that may occur during input.

So far, only the chemical vapor deposition apparatus 1 has been mainly described, but the present invention is not limited thereto. For example, a method for manufacturing an organic light emitting display device using the chemical vapor deposition apparatus 1 will also fall within the scope of the present invention.

First, after preparing the substrate S, after forming the inside of the chamber 10 in a vacuum, a step of disposing the mask 30 inside the chamber 10 may be performed. Thereafter, a step of disposing the substrate S between the susceptor 20 of the chamber 10 and the mask 30 may be performed. In the step of disposing the substrate S, the substrate S is placed on the substrate fixing part located on the lower surface of the susceptor 20 , and then the substrate fixing part moves upward through the through hole to move the lower surface of the susceptor 20 . The substrate (S) can be brought into close contact with each other.

After that, the susceptor 20 moves in the direction in which the mask 30 is arranged, and the outer side of the mask 30 contacts the space separation unit 40 to separate the space inside the chamber 10 . there is. As described above, as the susceptor 20 to which the substrate S is attached moves to the lower part of the chamber 10, it is aligned with and in close contact with the mask 30, and the outer shell of the mask 30 is separated from the space separation unit 40 and As it comes into contact, the space inside the chamber 10 may be completely separated into the upper chamber 10a and the lower chamber 10b.

A deposition layer may be formed on the substrate S by injecting gas through the gas injection unit 50 disposed below the mask 30 . The step of forming the deposition layer on the substrate S includes the steps of injecting gas into the lower chamber 10b of the chamber 10 through the gas injection unit 50 disposed below the mask 30 and the chamber 10 . It may include injecting a gas for pressure control into the chamber 10a of the chamber 10 through the pressure regulating unit 11 disposed in the chamber 10a of the . This is when the chamber 10a and the lower chamber 10b are closed due to the space separation unit 40 and the mask 30 in contact therewith in the process of depositing the deposition film on the substrate S, the supply to the lower chamber 10b The pressure of the chamber 10b is increased by the reaction gas or the like. In this case, in order to prevent the gas injected into the lower chamber 10b from moving to the lower chamber 10a, it is necessary to adjust the pressures of the lower chamber 10a and the lower chamber 10b to the same level. _{Therefore, by injecting a stabilizing gas, such as nitrogen (N 2} ), argon (Ar), for example, from the pressure control unit 11 located in the chamber 10a, the chamber 10a can induce the same pressure as the chamber 10b. can

The chemical vapor deposition apparatus 1 may form a patterned layer on the substrate S through the mask 30 mounted inside the chamber 10 . Specifically, sequentially including plasma stabilization step, plasma treatment (plasma treatment), plasma power increase, process gas stabilization, film formation process, process gas change, plasma treatment (plasma treatment), power lift process to perform a film forming process.

Hereinafter, a process of forming a SiNx thin film on the substrate S will be described as an example.

First, the initial vacuum degree of the fixed chamber 10 is maintained at 5E-4 Pa or less using a vacuum pump. At this time, since it is connected by in-line vacuum logistics, a high vacuum region is formed in order to minimize the influence of the previous process and to minimize the influence of the residual gas in the process chamber 10 . In the case of the conventional chemical vapor deposition apparatus 1, the initial vacuum degree is maintained in the range of 5E-1 Pa.

Thereafter, the mask 30 is loaded into the vacuum chamber 10 of the chemical vapor deposition apparatus 1 , and the substrate S is loaded with the mask 30 and the susceptor 20 in the chamber 10 of the chemical vapor deposition apparatus 1 . ) is inserted between The substrate (S) loaded into the chamber (10) makes the substrate (S) completely in close contact with the susceptor (20) by the substrate fixing part.

Thereafter, the substrate S and the mask 30 are precisely aligned using a vision alignment unit. When it is determined that precise alignment is achieved, the substrate S or the mask 30 is moved up and down to adhere. Thereafter, in order to separate the upper chamber 10a and the lower chamber 10b, the mask 30 to which the substrate S is bonded moves and is connected to the space separation unit 40 that separates the upper chamber 10a and the lower chamber 10b.

As described above, the substrate S in close contact with the mask 30 moves to the film formation position after adhering. After that, a plasma generating gas such as argon (Ar) is injected into the plasma generating source to maintain a pressure of 1 to 100 Pa, and then the DC power is raised to 3 to 5 W/cm 2 to generate plasma. At this time, the chamber 10a maintains the same degree of vacuum between the chamber 10b and the chamber 10a by supplying gas from a separate gas supply device to control the inflow of the process gas portion of the chamber 10b. Thereafter, a pressure of 1 to 100 Pa is adjusted by supplying a reactant, a reaction gas, and a transport gas through the gas supply unit. The reactant is injected into the plasma region to form radicals.

After that, a film-forming process is performed. The film formation speed is maintained within 10 ~ 800 nm/min, and gas of SiH4 (between 50-500 sccm)/NH3 (300-1000 sccm)/N2 (300-1000 sccm) is continuously supplied. When the thin film deposited on the substrate S reaches the target thickness, the supply of the gas contributing to the reaction is stopped and the plasma power is lowered in multiple stages at 1 W/cm 2 . When the film formation is completed, the substrate S is discharged from the chamber 10 .

4 is a cross-sectional view schematically illustrating an organic light emitting display device manufactured according to a method of manufacturing a display device according to another embodiment of the present invention.

Referring to FIG. 4 , various components of the organic light emitting display device are formed on a substrate S. A thin film transistor (TFT) and/or a capacitor (Cap) may be formed on the substrate S made of glass, plastic, or metal.

On the substrate S, a common layer such as a buffer layer 110, a gate insulating film 130, an interlayer insulating film 150, a protective film (not shown), etc. may be formed over the entire surface of the substrate S, a channel region, A patterned semiconductor layer 120 including a source contact region and a drain contact region may be formed, and together with the patterned semiconductor layer 120 , the gate electrode 140 and the source electrode 160 are components of the thin film transistor. ) and a drain electrode 162 may be formed.

In addition, a planarization layer 170 covering the thin film transistor and having an approximately flat top surface may be formed on the entire surface of the substrate S. The planarization layer 170 includes a patterned pixel electrode 210 , a counter electrode 230 substantially corresponding to the entire surface of the substrate S, and a light emitting layer interposed between the pixel electrode 210 and the counter electrode 230 . An organic light emitting diode (OLED) including an intermediate layer 220 having a multi-layered structure may be positioned thereon. Of course, the intermediate layer 220 may be a common layer substantially corresponding to the entire surface of the substrate S, and some layers may be a pattern layer patterned to correspond to the pixel electrode 210 , unlike the illustrated one. The pixel electrode 210 may be electrically connected to the thin film transistor through a via hole. Of course, the pixel defining layer 180 covering the edge of the pixel electrode 210 and having an opening defining each pixel region may be formed on the planarization layer 170 to substantially correspond to the entire surface of the substrate S.

The effects of the present invention are as follows.

First, after performing precise alignment in the chamber 10 without going through an external photo process during the chemical vapor deposition film forming process, the film forming layer can be selectively formed only on a desired portion. Through this, the work that was experimentally conducted through taping as it is masking when forming a chemical vapor deposition film can be continuously carried out in the system, and secondary contamination by residues remaining after masking or taping can be minimized. In addition, the size and position of cells in the mask can be arbitrarily controlled, and the adhesion rate between the substrate S and the mask is improved, which prevents the reactive species from penetrating into the gap between the substrate S and the mask 30, so that the accurate patterning process can be performed.

Second, the direction in which the substrate S is formed in the case of an in-line cluster structure connected to the deposition process during the manufacturing process of the organic light emitting display device as shown in FIG. 2 due to the application of the inversed structure Due to this 180 degree difference, it is necessary to install a mechanism that needs to invert the substrate S, but this structure is not necessary when the present invention is applied.

Third, in order to suppress contamination of the upper chamber 10a during the deposition process, it has a structure divided into a chamber 10a and a lower chamber 10b, that is, a technology of forming different sections by movement within the same space is applied. The contamination of the chamber 10a was suppressed by forming a space division function to control particle movement through pressure control of each chamber.

Fourth, during the film formation of the gas injection unit 50, which is a plasma generation source during the plasma chemical vapor deposition process and is a reactive species source, film formation particles generated during the process fall to the substrate S and cause a pollution source, but in the case of the present invention Since the gas injection unit 50 is installed in the lower chamber 10b, it is possible to fundamentally control the source of contamination. In addition, since it is separated into the upper chamber 10a and the lower chamber 10b, damage caused by F ion species inside the chamber 10a can be suppressed during self-cleaning using NF3.

Although the present invention has been described with reference to the embodiment shown in the drawings, which is merely exemplary, those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom. Therefore, the true technical protection scope of the present invention should be determined by the technical spirit of the appended claims.

1: chemical vapor deposition apparatus 10a: loss
10: chamber 10b: do
11: pressure control unit 15: alignment unit
19: passage 20: susceptor
21: elevating unit 23: stage
27: substrate fixing part 30: mask
40: space separation unit 50: gas injection unit
60: gas supply unit

Claims (13)

chamber containing the lower and lower chambers;
a susceptor disposed in the chamber and supporting a substrate;
a gas injection unit disposed on the susceptor and supplying a process gas for forming a film on the substrate;
a space separation unit disposed in the chamber and partitioning the lower chamber and the lower chamber; and
and a gas supply unit for supplying gas into the chamber;
A portion of the susceptor on which the substrate is disposed has a curved surface, Chemical vapor deposition apparatus. According to claim 1,
In the chamber, a mask disposed between the substrate and the gas ejection unit and aligned with the substrate; further comprising a chemical vapor deposition apparatus. 3. The method of claim 2,
The chemical vapor deposition apparatus further comprising a; is disposed in the chamber to adjust the pressure of the chamber and the chamber. 4. The method of claim 3,
The pressure control unit is disposed in the chamber, chemical vapor deposition apparatus. delete According to claim 1,
The curved surface of the susceptor is convex toward the direction in which the gas injection unit is disposed, a chemical vapor deposition apparatus. 4. The method of claim 3,
The space separation unit has a shape in which the central portion is opened according to the size of the mask, chemical vapor deposition apparatus. 4. The method of claim 3,
The gas supply unit supplies a process gas to the lower chamber of the chamber, a chemical vapor deposition apparatus. preparing a substrate;
placing the substrate between the susceptor and the mask in the chamber;
separating the space inside the chamber by moving the susceptor in a direction in which the mask is disposed so that the outer edge of the mask contacts the space separation unit;
Forming a deposition layer on the substrate by injecting gas through a gas injection unit disposed below the mask;
A portion of the susceptor on which the substrate is disposed has a curved surface. 10. The method of claim 9,
forming a vacuum inside the chamber; and
placing a mask inside the chamber;
Further comprising, a method of manufacturing a display device. 11. The method of claim 10,
The disposing of the substrate is a step of disposing the substrate in close contact with the lower surface of the susceptor. 11. The method of claim 10,
The step of separating the space inside the chamber is a step of dividing the space inside the chamber into a lower chamber and a lower chamber by a space separating unit. 11. The method of claim 10,
The step of forming a deposition layer on the substrate,
injecting gas into the lower chamber of the chamber through a gas injection unit disposed below the mask; and
injecting a pressure regulating gas into the upper chamber through a pressure regulating unit disposed in the lower chamber;
A method of manufacturing a display device, comprising:

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