KR20130043443A - Susceptor and chemical vapor deposition apparatus including the same - Google Patents

Susceptor and chemical vapor deposition apparatus including the same Download PDF

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Publication number
KR20130043443A
KR20130043443A KR1020110107576A KR20110107576A KR20130043443A KR 20130043443 A KR20130043443 A KR 20130043443A KR 1020110107576 A KR1020110107576 A KR 1020110107576A KR 20110107576 A KR20110107576 A KR 20110107576A KR 20130043443 A KR20130043443 A KR 20130043443A
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South Korea
Prior art keywords
susceptor
vapor deposition
chemical vapor
deposition apparatus
curvature
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KR1020110107576A
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Korean (ko)
Inventor
허인회
홍종파
김추호
김준우
지원수
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삼성전자주식회사
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Priority to KR1020110107576A priority Critical patent/KR20130043443A/en
Publication of KR20130043443A publication Critical patent/KR20130043443A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Abstract

The disclosed susceptor is a disk-shaped susceptor for a chemical vapor deposition apparatus, the susceptor includes a plurality of pockets formed concave to receive the deposition on the upper surface, the susceptor may be formed in a curved surface.
Another disclosed susceptor is a disk-shaped susceptor for a chemical vapor deposition apparatus, the susceptor including a plurality of pockets recessed to receive a deposit on the upper surface, the diameter of the upper surface of the susceptor (d The size of 1 ) may be different from the size of the diameter d 2 of the lower surface of the susceptor.
In addition, the disclosed chemical vapor apparatus may include the susceptor.

Description

Susceptor and chemical vapor deposition apparatus including the same

A susceptor and a chemical vapor deposition apparatus having the same.

A chemical vapor deposition (CVD) apparatus is a device for forming a thin film on a deposit (substrate such as a semiconductor wafer) by using a chemical reaction, generally a high vapor pressure reaction gas in a vacuum chamber provided with a substrate Is injected to grow a thin film by the reaction gas on a substrate.

Recently, CVD such as metal organic chemical vapor deposition (MOCVD) has been in the spotlight due to the miniaturization of semiconductor devices, development of high efficiency, high power light emitting diodes (LEDs), and the like. As chamber and susceptor sizes increase to cause deposition, it becomes a key technique to uniformly grow thin films on a large number of deposits. At this time, the deposit is placed on a satellite disk, and the satellite disks are each accommodated in a plurality of pockets provided on the susceptor. For uniform growth of the thin film on the deposit, the susceptor itself is configured to rotate as well as to rotate the satellite disk on which the deposit is placed.

It provides a susceptor and a chemical vapor deposition apparatus having the same.

The susceptor disclosed is

In the susceptor for a disk-shaped chemical vapor deposition apparatus,

The susceptor includes a plurality of pockets formed concave so as to accommodate the deposit on the upper surface,

The susceptor may be formed in a curved surface.

The susceptor may be convexly formed in the upper surface direction with respect to a central axis thereof.

Curvature of the upper surface of the susceptor may be the same as the curvature of the lower surface of the susceptor.

The curvature of the upper surface of the susceptor may be different from the curvature of the lower surface of the susceptor.

At least one of the upper and lower surfaces of the susceptor may be formed as part of a spherical surface.

An area of the upper surface of the susceptor may be larger than an area of the lower surface of the susceptor.

The height difference Δh between the central axis of the susceptor and the center point where the upper surface meets and the edge of the upper surface may be several nm to several mm.

The other susceptor disclosed is

In the susceptor for a disk-shaped chemical vapor deposition apparatus,

The susceptor includes a plurality of pockets formed concave so as to accommodate the deposit on the upper surface,

The size of the diameter d 1 of the upper surface of the susceptor may be different from the size of the diameter d 2 of the lower surface of the susceptor.

The diameter d 1 of the upper surface of the susceptor may be larger than the diameter d 2 of the lower surface of the susceptor.

The disclosed chemical vapor deposition apparatus

The susceptor;

A support part supporting the susceptor while supplying a flow gas for rotating the vapor deposition body to the susceptor;

A reaction gas supply unit supplying a reaction gas including a deposition material deposited on the deposition target; And

It may include a reaction chamber for receiving the susceptor, the support, and the reactive gas supply.

The reaction chamber may be of a radial flow type.

The reaction chamber may be of reverse flow type.

It is provided below the susceptor, and may further include a heating means for heating the deposit to be accommodated in the pocket portion.

The chemical vapor deposition apparatus may be a metal organic chemical vapor deposition (MOCVD) apparatus.

The disclosed susceptor and the chemical vapor phase apparatus including the same may prevent warpage of the susceptor due to heating, thereby reducing variation in heating temperature of the substrate, which is a deposit, and improving deposition uniformity of the thin film. Therefore, the disclosed susceptor and the chemical vapor deposition apparatus having the same can improve the uniformity of the thin film, and as a result, the characteristics, uniformity, productivity, etc. of the device to which the thin film is applied can be improved.

FIG. 1A is a schematic plan view of the disclosed susceptor, and FIG. 1B is a schematic cross-sectional view of the susceptor seen from AA ′ of FIG. 1A. 1C illustrates the case where the disclosed susceptor is heated.
2A is a schematic cross-sectional view of a susceptor according to a comparative example, and FIG. 2B illustrates a state in which the susceptor of the comparative example is heated.
3A and 3B illustrate a result of simulating a bending phenomenon according to a temperature of a susceptor according to a comparative example.
4 is a schematic cross-sectional view of another susceptor disclosed.
5 is a schematic cross-sectional view of another susceptor disclosed.
6 is a schematic cross-sectional view of a chemical vapor phase apparatus including the disclosed susceptor.
7 is a schematic cross-sectional view of another disclosed chemical vapor apparatus.

Hereinafter, a susceptor disclosed and a chemical vapor deposition apparatus having the same will be described in detail with reference to the accompanying drawings. In the following drawings, the same reference numerals refer to the same components, the size of each component in the drawings may be exaggerated for clarity and convenience of description.

FIG. 1A is a schematic plan view of the disclosed susceptor 100, and FIG. 1B is a schematic cross-sectional view of the susceptor 100 as seen from AA ′ of FIG. 1A. 1C is a schematic cross-sectional view of the heated susceptor 100 '.

1A and 1B, the disclosed susceptor 100 is a susceptor for a disk-shaped chemical vapor deposition apparatus, which appears to be formed in a circular plane on its plan view. However, the susceptor 100 may be formed to have a curvature, as in the cross-sectional view thereof. That is, the susceptor 100 may be formed in a curved surface. The susceptor 100 may be formed convexly in the direction of the upper surface 101 about its central axis. That is, the center portion of the susceptor 100 may be formed to rise upward, and the edge portion of the susceptor 100 may be formed to sag downward. The upper surface 101 and the lower surface 103 of the susceptor 100 may be curved surfaces, respectively, and may have the same curvature. On the other hand, the upper surface 101 and the lower surface 103 of the susceptor 100 may be a curved surface having different curvature (curvature). In addition, the upper surface 101 and the lower surface 103 of the susceptor 100 may be part of a spherical surface. On the other hand, the susceptor 100 may be formed in a streamlined shape.

The susceptor 100 may be made of a material having high thermal conductivity, and for example, may be made of graphite. In addition, the susceptor 100 may be coated with silicon carbide (SiC) or carbon (C). Coating materials such as silicon carbide and carbon may improve the strength of the susceptor 100. However, the material forming the susceptor 100 is not limited to the above, and may be variously changed.

A plurality of pockets 110 may be provided on the upper surface 101 of the susceptor 100. The pocket part 110 may be a recess recess recessed to a predetermined depth from the upper surface 101 of the susceptor 100. That is, the pocket part 110 may be a circular groove. As illustrated in FIG. 1A, the plurality of pocket parts 110 may be arranged at regular intervals around the central axis of the susceptor 100. In FIG. 1A, six pocket parts 110 are illustrated, but the number of pocket parts 110 is not limited thereto and may vary depending on the size of the susceptor 100 and the size of the pocket part 110. . In addition, the pocket part 110 may be arranged in multiple rows, that is, concentrically, with respect to the central axis of the susceptor 100. The satellite disk 120 may be accommodated in the pocket part 110. In addition, a substrate (not shown), which is a deposition target, may be provided on the satellite disk 120.

The support 130 may be connected to the center of the susceptor 100. The support unit 130 may be provided below the susceptor 100 and may be connected to a predetermined driving device (not shown). The susceptor 100 may rotate by the rotation of the support 130. Therefore, the central axis of the susceptor 100 may be a rotation axis. On the other hand, the satellite disk 120 accommodated in the pocket 110 may itself rotate independently of the rotation of the susceptor 100. For example, the support 130 may be formed with a flow gas flow path (not shown) for supplying a flow gas for rotating the satellite disk 120. The flow gas flow path may be connected to a susceptor flow path (not shown) formed in the susceptor 100, and the susceptor flow path may supply the flow gas to the pocket part 110. Therefore, the satellite disk 120 accommodated in the pocket 110 may rotate by the flow gas.

Next, when the curved susceptor 100 illustrated in FIG. 1B is heated by the heating means (430 of FIG. 6), the curved susceptor 100 may be deformed into a planar shape like the susceptor 100 ′ illustrated in FIG. 1C. . In addition, the heated planar susceptor 100 'may return to the curved susceptor 100 when the heat cools. When the susceptor 100 disclosed is heated to a high temperature, the susceptor 100 may be deformed into a planar shape such that the distance between the heating means and the susceptor 100 ′ may be kept constant. As a result, the variation in the heating temperature of the substrate as the vapor deposition body is reduced, and vortex of the reaction gas G1 can be prevented on the substrate. Therefore, the uniformity of the thickness and the components of the thin film formed on the substrate can be improved. As a result, characteristics, uniformity, productivity, and the like of the device to which the thin film is applied may be improved.

FIG. 2A is a schematic cross-sectional view of the susceptor 1 according to the comparative example, and FIG. 2B illustrates a case where the susceptor 1 'of the comparative example is heated.

2A, the susceptor 1 of a comparative example is provided in planar shape. A plurality of pocket portions 10 are provided on the upper surface 3 of the susceptor 1, and the satellite disc 20 is provided on each pocket portion 10. The susceptor 1 is connected to the support 30 and can rotate.

Referring to FIG. 2B, the heated susceptor 1 ′ of the comparative example is bent by the temperature difference between the upper surface 3 and the lower surface 5 of the susceptor 1 ′. That is, the susceptor 1 ′ can be convexly curved toward the support part 30 about its central axis. In this case, the center and the edge portion of the susceptor 1 'are different from the heating means (430 of FIG. 6) provided at the lower portion of the susceptor 1'. That is, the edge portion of the susceptor 1 'is farther from the heating means than its central portion. Thus, the temperature of the susceptor 1 'and the satellite disk 20 provided thereon is partially varied. For example, the central portion of the susceptor 1 ′ close to the heating means can be heated to a higher temperature than its edge portion. In addition, as the susceptor 1 'is bent, the satellite disk 20 provided thereon may be inclined toward the central axis thereof. Therefore, the reactant gas G1 ′ may collide with the inclined satellite disk 20 and vortex may occur. As a result, the uniformity of the thickness and the components of the thin film formed on the satellite disk 20 can be reduced.

3A and 3B illustrate the results of simulating the warpage phenomenon according to the temperature of the susceptor 1 according to the comparative example.

FIG. 3A illustrates a simulation result of an ideal case in which the upper surface 3 and the lower surface 5 of the susceptor 1 are heated to about 1170 ° C. as a whole without a temperature difference. Referring to FIG. 3A, the height difference Δh ′ between the central axis of the susceptor 1 and its edge portion is about 4.2 μm. When the susceptor 1 is heated while maintaining a constant temperature as a whole, it can be seen that the deflection of the susceptor 1 is negligible compared to the thickness of the susceptor 1.

Referring to FIG. 3B, the upper surface 3 of the susceptor 1 is about 1070 ° C., and the lower surface 5 is about 1170 ° C., which is a simulation result. When the susceptor 1 is heated to about 1000 ° C. or more, a temperature difference of about 100 ° C. to 150 ° C. may occur between the upper surface 3 and the lower surface 5 of the susceptor 1. This temperature difference may be caused by heat loss due to the thermal conductivity of the material constituting the susceptor 1 and cooling by the flow of the reaction gas on the upper surface 3 of the susceptor 1. In this way, when a large temperature difference occurs between the upper and lower surfaces 3 and 5 of the susceptor 1, the susceptor 1 can be bent by the thermal expansion difference on the upper and lower surfaces 3 and 5. For example, since the lower surface 5 of the susceptor 1 is hotter than the upper surface 3 of the susceptor 1, the lower surface 5 of the susceptor 1 expands more than the upper surface 3, thereby susceptor 1. It can bend convexly toward the lower surface 5 about the central axis. Further, it can be seen that the height difference Δh ″ between the central axis of the susceptor 1 and its edge portion is about 1.75 mm, which is larger than the height difference Δh ′ shown in FIG. 3A, and thus the susceptor ( It can be seen that a large warpage phenomenon occurs in 1). However, the susceptor 100 disclosed in FIG. 1B may have a curved shape to correct or prevent warpage due to a temperature difference between the upper and lower surfaces 101 and 103 of the heated susceptor 100.

4 is a schematic cross-sectional view of another susceptor 200 disclosed.

Referring to FIG. 4, the susceptor 200 disclosed as a susceptor for a chemical vapor deposition apparatus having a disk shape may be provided flat. That is, the upper surface 201 and the lower surface 203 of the susceptor 200 may be flat and parallel to each other. However, the size of the diameter d 1 of the upper surface 201 of the susceptor 200 may be different from the size of the diameter d 2 of the lower surface 203. In addition, the diameter d 1 of the upper surface 201 of the susceptor 200 may be larger than the diameter d 2 of the lower surface 203. That is, the area of the upper surface 201 and the lower surface 203 of the susceptor 200 may be different from each other, and the area of the upper surface 201 may be larger than the area of the lower surface 203.

When the susceptor 200 disclosed is heated, it may be thermally expanded more because the lower surface 203 of the narrow area is heated to a higher temperature than the upper surface 201 of the large area. Therefore, the warpage of the susceptor 200 can be prevented. As a result, the uniformity of the thin film formed on the substrate can be improved, and the characteristics, uniformity, productivity, etc. of the device employing the same can be improved. Meanwhile, at least one of the upper surface 201 and the lower surface 203 of the susceptor 200 may be formed as a curved surface.

5 is a schematic cross-sectional view of another susceptor 300 disclosed.

Referring to FIG. 5, the susceptor 300 disclosed as a susceptor for a chemical vapor deposition apparatus having a disk shape may be formed to have a curvature. The susceptor 300 may be convex in the direction of the upper surface 301 about its central axis. That is, the center of the susceptor 300 may be formed to rise upward, and the edge portion of the susceptor 300 may be formed to sag downward. The upper surface 301 and the lower surface 303 of the susceptor 300 may be curved surfaces, respectively, and may have the same curvature. In addition, an area of the upper surface 301 and the lower surface 303 of the susceptor 300 may be different from each other. For example, an area of the upper surface 301 of the susceptor 300 may be larger than an area of the lower surface 303. Meanwhile, the upper surface 301 and the lower surface 303 of the susceptor 300 may be curved surfaces having different curvatures. In addition, the upper surface 301 and the lower surface 303 of the susceptor 300 may be part of a spherical surface.

When the susceptor 300 disclosed is bent, the curved susceptor 300 may be bent and flattened. In addition, since the lower surface 303 of the narrower area is heated to a higher temperature than the upper surface 301 of the large area, more thermal expansion may be performed. Therefore, the warpage phenomenon of the susceptor 300 can be corrected or prevented. As a result, the uniformity of the thin film formed on the substrate can be improved, and the characteristics, uniformity, productivity, etc. of the device employing the same can be improved.

6 is a schematic cross-sectional view of a chemical vapor deposition apparatus 400 including the susceptor 100 disclosed.

Referring to FIG. 6, the disclosed chemical vapor deposition apparatus 400 may include a susceptor 100 in the reaction chamber 420. The susceptor 100 may have the same structure as the susceptor 100 of FIG. 1B, for example. In addition, the structure of the susceptor 100 may be variously modified as shown in FIGS. 4 and 5. The satellite disk 120 may be accommodated in the pocket 110 of the susceptor 100, and a predetermined substrate (not shown), which is a vapor deposition body, may be provided on the satellite disk 120. Heating means 430 for heating the substrate below the susceptor 100 may be provided. The heating means 430 can heat the substrate using induction heating. For example, the heating means 430 may comprise a radio frequency coil. Heat generated in the heating means 430 is transferred to the susceptor 100, whereby the substrate may be heated. The heating means 430 may heat the susceptor 100 to several hundred degrees Celsius to 1000 degrees Celsius or more. For example, when the GaN-based growth layer is formed, the heating means 430 may heat the susceptor 100 to about 700 ° C to 1300 ° C.

The gas supply part 410 may be provided in a cover part of the reaction chamber 420, that is, a lid part. The gas supply part 410 may be positioned at the center of the cover part and may have a structure protruding downwardly, that is, into the reaction chamber 420. The reaction gas G1 injected from the gas supply part 410 may be discharged out through the exhaust part 440 provided below the reaction chamber 420 through the upper surface of the susceptor 100. As the reaction gas G1 passes through the substrate of the susceptor 100, a predetermined thin film may be formed on the substrate. Since the disclosed chemical vapor deposition apparatus 400 deforms flat when the susceptor 100 is heated, the distance between the center and the edge portion of the susceptor 100 and the heating means 430 may be constant. Therefore, it is possible to reduce the heating temperature variation of the substrate to be deposited and to improve the deposition uniformity of the thin film. For example, when manufacturing a light emitting device such as an LED using the disclosed chemical vapor deposition apparatus 400, the uniformity of the emission wavelength may be improved.

The disclosed chemical vapor deposition apparatus 400 may be referred to as a radial flow type apparatus in this respect, since the reactive gas G1 is radially injected at the center portion of the reaction chamber 420. However, the disclosed chemical vapor deposition apparatus 400 is not limited to the radial flow type as shown in FIG. 6 and may be variously modified.

7 is a schematic cross-sectional view of another disclosed chemical vapor deposition apparatus 500.

Referring to FIG. 7, the chemical vapor deposition apparatus 500 may include a susceptor 200 ′ in the reaction chamber 520, and may include a plurality of gas supplies 510 on an upper side of the reaction chamber 520. have. The plurality of gas supply units 510 may be disposed at equal intervals on the upper side of the reaction chamber 520. The reaction gas G1 injected from the plurality of gas supply parts 510 passes through the surface of the susceptor 200 'and is external to the reaction chamber 520 through an exhaust part 540 provided at the center of the susceptor 200'. Can be exhausted. Accordingly, the disclosed chemical vapor deposition apparatus 500 is different from the chemical vapor deposition apparatus 400 of FIG. 6, since the reaction gas G1 is injected from the side of the reaction chamber 520 to the central portion. It may be a device of, but may be variously modified without being limited thereto.

The susceptor 200 ′ may have the same (or similar) structure as the susceptor 200 of FIG. 4 except that the exhaust part 540 is formed at the center. That is, the susceptor 200 ′ may have the same (or similar) structure as the susceptor 200 of FIG. 4, except that the susceptor 200 ′ has an exhaust part 540 formed in the support 230. Except for forming positions of the gas supply unit 510 and the exhaust unit 540 in FIG. 7, the rest of the configuration may be the same as or similar to that of FIG. 6.

The disclosed chemical vapor deposition apparatus 500 may be kept flat even when the susceptor 200 ′ is heated, and the warpage phenomenon is corrected. Therefore, it is possible to reduce the heating temperature variation of the substrate to be deposited, and to improve the deposition uniformity of the thin film formed on the substrate.

Meanwhile, the disclosed chemical vapor deposition apparatuses 400 and 500 described with reference to FIGS. 6 and 7 may be, for example, a metal organic chemical vapor deposition (MOCVD) apparatus. Such a MOCVD apparatus may be usefully used in manufacturing a high efficiency / high power light emitting device (LED). However, the disclosed chemical vapor deposition apparatuses 400 and 500 are not limited to MOCVD apparatuses, but may be applied to various types of deposition apparatuses.

The present invention susceptor and the chemical vapor deposition apparatus having the same have been described with reference to the embodiment shown in the drawings for clarity, but this is only illustrative, and those skilled in the art various modifications therefrom And other equivalent equivalent embodiments are possible. Accordingly, the true scope of the present invention should be determined by the appended claims.

100, 200, 300: susceptor 110, 210, 310: pocket
120, 220, 320: satellite discs 130, 230, 330: support portion
400, 500: chemical vapor deposition apparatus

Claims (14)

In the susceptor for a disk-shaped chemical vapor deposition apparatus,
The susceptor includes a plurality of pockets formed concave so as to accommodate the deposit on the upper surface,
The susceptor is a susceptor formed in a curved surface. The method of claim 1,
The susceptor is a susceptor formed convexly in the upper direction about its central axis. The method of claim 1,
The curvature of the upper surface of the susceptor is the same as the curvature of the lower surface of the susceptor. The method of claim 1,
The curvature of the upper surface of the susceptor is different from the curvature of the lower surface of the susceptor. The method of claim 1,
At least one of the upper and lower surfaces of the susceptor is formed as part of a spherical surface. The method of claim 1,
And an area of the upper surface of the susceptor is larger than an area of the lower surface of the susceptor. The method of claim 1,
And a height difference [Delta] h between the center point of the susceptor and the center point where the top surface meets and the edge of the top surface is several nm to several mm. In the susceptor for a disk-shaped chemical vapor deposition apparatus,
The susceptor includes a plurality of pockets formed concave so as to accommodate the deposit on the upper surface,
The diameter of the upper surface of the susceptor (d 1 ) is different from the size of the diameter (d 2 ) of the lower surface of the susceptor susceptor. The method of claim 8,
The diameter of the upper surface of the susceptor (d 1 ) is greater than the size of the diameter (d 2 ) of the lower surface of the susceptor. A susceptor according to any one of claims 1 to 9;
A support part supporting the susceptor while supplying a flow gas for rotating the vapor deposition body to the susceptor;
A reaction gas supply unit supplying a reaction gas including a deposition material deposited on the deposition target; And
And a reaction chamber accommodating the susceptor, the support, and the reactive gas supply. 11. The method of claim 10,
And the reaction chamber is of a radial flow type. 11. The method of claim 10,
And the reaction chamber is of a reverse flow type. 11. The method of claim 10,
A chemical vapor deposition apparatus provided below the susceptor, and further comprising heating means for heating the vapor deposition body accommodated in the pocket portion. 11. The method of claim 10,
The chemical vapor deposition apparatus is a metal organic chemical vapor deposition (MOCVD) device is a chemical vapor deposition apparatus.
KR1020110107576A 2011-10-20 2011-10-20 Susceptor and chemical vapor deposition apparatus including the same KR20130043443A (en)

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KR20160032337A (en) * 2014-09-15 2016-03-24 삼성디스플레이 주식회사 Chemical vapor deposition apparatus and method of manufacturing display apparatus using the same
KR20180053628A (en) * 2015-04-07 2018-05-23 가부시키가이샤 사무코 Susceptor, vapor deposition apparatus, and vapor deposition method
CN109440063A (en) * 2018-09-12 2019-03-08 华灿光电(苏州）有限公司 A kind of growing method of gallium nitride based LED epitaxial slice
US10490437B2 (en) 2015-04-07 2019-11-26 Sumco Corporation Susceptor, vapor deposition apparatus, vapor deposition method and epitaxial silicon wafer
CN113061875A (en) * 2021-03-29 2021-07-02 松山湖材料实验室 High temperature resistant sample holds in palm

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160032337A (en) * 2014-09-15 2016-03-24 삼성디스플레이 주식회사 Chemical vapor deposition apparatus and method of manufacturing display apparatus using the same
KR20180053628A (en) * 2015-04-07 2018-05-23 가부시키가이샤 사무코 Susceptor, vapor deposition apparatus, and vapor deposition method
US10490437B2 (en) 2015-04-07 2019-11-26 Sumco Corporation Susceptor, vapor deposition apparatus, vapor deposition method and epitaxial silicon wafer
CN109440063A (en) * 2018-09-12 2019-03-08 华灿光电(苏州）有限公司 A kind of growing method of gallium nitride based LED epitaxial slice
CN109440063B (en) * 2018-09-12 2021-01-12 华灿光电(苏州）有限公司 Growth method of gallium nitride-based light-emitting diode epitaxial wafer
CN113061875A (en) * 2021-03-29 2021-07-02 松山湖材料实验室 High temperature resistant sample holds in palm

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