WO2018155419A1

WO2018155419A1 - Vaporizer and production method for element structure

Info

Publication number: WO2018155419A1
Application number: PCT/JP2018/005934
Authority: WO
Inventors: 信青代; 健介清; 高橋　明久; 貴浩矢島; 裕子加藤
Original assignee: 株式会社アルバック
Priority date: 2017-02-21
Filing date: 2018-02-20
Publication date: 2018-08-30
Also published as: CN109952388A; JPWO2018155419A1; JP6768918B2; KR20190062564A; KR102221194B1; TW201840242A

Abstract

This vaporizer is for supplying a vaporized resin material to a production device for an element structure. The vaporizer comprises: a vaporization tank that comprises an inner space that is for vaporizing a liquid resin material; a discharge part that sprays the liquid resin material into the inner space; a heating part that is arranged in the inner space so as to face the discharge part and that heats and vaporizes the sprayed liquid resin material; and a pooling part that is arranged in the inner space below the heating part. Liquid resin material that is not vaporized by the heating part drips down into the pooling part and is retained therein.

Description

Vaporizer and element structure manufacturing apparatus

The present invention relates to a vaporizer and an element structure manufacturing apparatus, and more particularly to a technique suitable for use in manufacturing an element structure having a laminated structure that protects a device and the like from oxygen, moisture, and the like.
This application claims priority based on Japanese Patent Application No. 2017-030319 for which it applied to Japan on February 21, 2017, and uses the content here.

For example, an organic EL (Electro Luminescence) element or the like is known as an element including a compound that easily deteriorates due to moisture or oxygen. For such an element, an attempt has been made to suppress intrusion of moisture or the like into the element by forming a laminated structure in which a layer containing a compound and a protective layer covering the layer are laminated. For example, Patent Document 1 described below describes a light-emitting element that includes a protective film formed of a laminated film of an inorganic film and an organic film on an upper electrode layer.

As the organic film, an acrylic resin or the like is used, and the resin material is vaporized and supplied to form a film.

Japanese Unexamined Patent Publication No. 2013-73880 International Publication No. 2014/196137 Pamphlet

The present inventors have found that the vapor can be stably supplied without excessively raising the temperature by spraying the liquid resin into a heated vaporizer and heating and vaporizing it. However, part of the sprayed resin material does not evaporate on the heating surface, and a liquid film is formed, so that the vaporized area on the heating surface may be reduced by the liquid resin material. As a result, the vaporization efficiency is deteriorated, and the supply amount of the resin material supplied from the vaporizer to the film formation chamber is reduced, so that there is a problem that the deposition (film formation rate) is deteriorated. In particular, on the bottom surface of the vaporizer, when the resin material sprayed on the surface comes in contact with the liquefied resin material, it does not evaporate at this portion, and the reduction of the vaporized area is promoted.
Further, on the bottom surface of the vaporizer, when the treatment time is prolonged, the liquefied resin material not only adheres but is stored, and the vaporization rate is extremely lowered. For this reason, the number of resin materials that are not used for film formation increases, the vaporization efficiency decreases, and the liquefied resin material is wasted without being used for film formation. There was a request to improve.

Here, when the heating temperature of the vaporizer is significantly increased above the evaporation temperature of the resin material in order to increase the vaporization rate, the resin material is polymerized and cured by heat in the vaporizer. There is a problem that the film rate decreases, which is not realistic.

Further, due to insufficient vaporization, the amount of resin material supplied from the vaporizer to the film formation chamber decreases, and film formation may not be performed sufficiently. In this case, when the substrate surface having the device layer is uneven, the boundary portion of the unevenness cannot be sufficiently covered with the resin film. There was a problem that coating failure might occur. When such a coating failure of the inorganic film occurs, it becomes impossible to prevent moisture from entering from the location where the coating failure has occurred, and thus it becomes difficult to ensure a sufficient barrier property.

The present invention has been made in view of the above circumstances, and aims to achieve at least one of the following objects.
1. To stabilize the evaporation rate.
2. To improve the supply state of resin material vapor.
2. To prevent film formation defects caused by a decrease in the evaporation rate.
3. Ensure barrier properties.

A vaporizer according to a first aspect of the present invention is a vaporizer for supplying a vaporized resin material to an element structure manufacturing apparatus, and includes an internal space for vaporizing a liquid resin material. A vaporizing tank, a discharge part that sprays the liquid resin material in the internal space, and a heating unit that is disposed opposite to the discharge part and heats and vaporizes the sprayed liquid resin material in the internal space. And a storage section that is disposed below the heating section and in which the liquid resin material that has not been vaporized in the heating section is dropped and stored in the internal space.
In the vaporizer according to the first aspect of the present invention, when viewed from the discharge unit, the one surface of the heating unit in contact with the liquid resin material sprayed from the discharge unit is directed from the central region toward the outer peripheral region. May be inclined downward.
In the vaporizer according to the first aspect of the present invention, a through hole that communicates from the discharge part to the storage part may be arranged in the outer peripheral area of the heating part.
In the vaporizer according to the first aspect of the present invention, the storage unit may have a temperature lower than that of the heating unit.
In the vaporizer according to the first aspect of the present invention, the vaporization tank may include a temperature control device that controls the temperature of the wall surface in contact with the internal space.
In the vaporizer according to the first aspect of the present invention, the resin material vaporized from the vaporization tank is first introduced into a processing chamber (film formation chamber) that constitutes the element structure manufacturing apparatus. A pipe, a second pipe for leading the resin material vaporized from the vaporization tank to a portion different from the film formation chamber, and the first pipe arranged between the vaporization tank and the film formation chamber. And a switching unit that enables selection of the second pipe.
The device for manufacturing an element structure according to the second aspect of the present invention is configured to cover the functional layer disposed on the one surface side of the substrate and to form a first layer made of an inorganic material having a local convex portion. A resin material film made of the resin material is formed on the first layer, and the resin material film is cured on the first layer so that the resin material vaporized from the vaporizer according to the first aspect can be supplied. A part of the resin film located at a position including a boundary part between the outer surface of the convex part and one surface of the substrate when the first layer is viewed from a side cross section. A localization processing part for removing the resin film at other positions, the convex part on the one surface side, a resin material in which a part of the resin film is left, and the exposure by the removal A second layer forming part for forming a second layer made of an inorganic material so as to cover the first layer A.
In the device structure manufacturing apparatus according to the second aspect of the present invention, the localization processing unit uses a dry etching method so that a region including the top portion of the outer surface of the convex portion is exposed. The resin film may be removed.

According to the vaporizer according to the first aspect of the present invention, the liquid resin material flows down from the heating unit to the storage unit, and the liquid resin material sprayed on the heating unit stays on one surface of the heating unit. There is nothing to do. For this reason, it is possible to reduce the amount of the resin material sprayed on the one surface of the heating unit to be liquefied. At the same time, the liquid resin material sprayed on the heating part does not stay on one surface of the heating part. For this reason, the resin material polymerized by heating on the one surface of the warming part is flowed down to the lower storage part, and the amount of the resin material polymerized by heating on the one surface of the warming part can be reduced. This can prevent the vaporization of the resin material on one surface of the heating part from being hindered. For this reason, it becomes possible to suppress the reduction | decrease of the vaporization rate in a vaporization tank, and to supply the stable vaporized resin material.

According to the vaporizer according to the first aspect of the present invention, the one surface of the heating unit that contacts the liquid resin material sprayed from the discharge unit is inclined downward from the central region toward the outer peripheral region. This prevents the liquid resin material from flowing down on the one surface of the warming portion by an inclination, so that the liquid resin material sprayed on the warming portion does not stay on the one surface of the warming portion. For this reason, it is possible to reduce the amount of the resin material sprayed on one surface of the warming part to be liquefied. At the same time, the liquid resin material sprayed on the heating part does not stay on one surface of the heating part. For this reason, the resin material polymerized by heating on the one surface of the warming part is caused to flow down to the lower storage part to reduce the amount of the resin material polymerized by heating on the one surface of the warming part. It is possible to prevent the vaporization of the resin material on the one surface of the heating unit from being hindered. For this reason, it becomes possible to suppress the reduction | decrease of the vaporization rate in a vaporization tank, and to supply the stable vaporized resin material.

According to the vaporizer according to the first aspect of the present invention, the internal space is divided into an upper space and a lower space by the heating unit by arranging a through hole that communicates from the discharge unit to the storage unit. The portion below the heating portion is divided into the storage portion, and the portion of the liquid resin material sprayed on the heating portion that has not been vaporized flows down to the storage portion through the through hole. There is no stagnation on one surface of the heating section. At the same time, the resin material that has not been vaporized is not heated and polymerized for a long time on one side of the heating unit, and even if part of it is polymerized, it is caused to flow down to the lower storage unit by the liquid resin material. The Moreover, a vaporization state can be stabilized by performing vaporization in the internal space upper side divided | segmented into upper space and lower space by the heating part. For this reason, the vaporization of the resin material on one surface of the heating unit is not hindered, and it is possible to suppress the reduction of the vaporization rate in the vaporization tank and to supply a stable vaporized resin material. .

According to the vaporizer according to the first aspect of the present invention, the storage unit is set to a temperature lower than the heating unit, so that the liquid resin material flowing down to the storage unit is heated in the storage unit. There is no polymerization, and the polymerized resin material does not increase. Furthermore, the influence from the storage part with respect to the temperature state of a heating part can be reduced by making a storage part into temperature lower than a heating part.

According to the vaporizer according to the first aspect of the present invention, the vaporization tank includes the wall surface temperature control device in contact with the internal space, whereby the wall surface temperature can be set to a temperature suitable for vaporization. . Furthermore, since the wall surface is erected, the liquid resin material does not flow down the wall surface and stay on the wall surface. In addition, since the resin material solidified by heating on the wall surface flows down to the lower storage part, the heating part can stably perform vaporization on the upper side of the internal space, and the vaporized state can be stabilized. .

Moreover, according to the vaporizer which concerns on the 1st aspect of this invention, by providing a 1st piping, a 2nd piping, and a switching part, resin material can be stably supplied to a film-forming chamber, and film-forming The rate can be stabilized and a resin material film having desired film characteristics can be formed.

Further, according to the element structure manufacturing apparatus of the second aspect of the present invention, the resin material is stably supplied from the vaporizer to the film forming chamber, the film forming rate is stabilized, and the desired film characteristics are obtained. It is possible to form a resin material film. Thereby, it becomes possible to reliably seal the functional layer by the first layer and the second layer with the localized resin material, and to manufacture an element structure having high barrier characteristics.

In the device structure manufacturing apparatus according to the second aspect of the present invention, the localization processing unit may expose a region including the top portion of the outer surface of the convex portion by using a dry etching method. In addition, since the resin film is removed, the substrate, the first layer made of an inorganic material, covering the functional layer disposed on the one surface side of the substrate and having local convex portions, and the first layer As seen from the side cross section, the resin material made of an organic material that covers the first layer and is disposed only (only) in the vicinity of the position including the boundary between the outer surface of the convex portion and one surface of the substrate. And the second layer made of an inorganic material that covers the first layer exposed in the region where the convex portion on the one surface side, the resin material, and the resin material are not present. be able to. With this localized resin material, the functional layer is reliably sealed by the first layer and the second layer, and unnecessary damage is not caused to the first layer. At this time, unnecessary portions of the resin material can be removed, and only the portions necessary for sealing can be easily localized, and an element structure with high barrier characteristics can be manufactured. .
The localization processing unit removes a part of the resin film using a dry etching method, and leaves a resin material in which a part of the resin film is localized on the substrate. The resin material remains around the convex portion or in the concave portion. Of the resin film, the upper surface of the convex part and the resin film on the flat part are removed.

In the device structure manufacturing apparatus according to the second aspect of the present invention, the localization processing unit detects a change in a specific condition among the conditions for etching the resin film, and ends the etching process. It is preferable to have a detection device used as the above.
In the element structure manufacturing apparatus according to the second aspect of the present invention, it is preferable that the resin film forming unit includes a substrate cooling device that cools the substrate to a temperature lower than a vaporization temperature of the resin material.
In the element structure manufacturing apparatus according to the second aspect of the present invention, it is preferable that the resin film-forming unit has a UV irradiation device that irradiates the resin material on the substrate surface with UV rays and performs UV curing.
The element structure manufacturing apparatus according to the second aspect of the present invention includes the first layer forming unit, the resin film forming unit, the localization processing unit, and the second layer forming unit. It is preferable to have a transfer device for transferring the substrate.

According to the aspect of the present invention, it is possible to suppress the reduction of the vaporization rate in the vaporization tank, to supply a stable vaporized resin material, and to manufacture an element structure having high barrier characteristics. It is possible to achieve the effect of being able to.

It is a schematic diagram showing an apparatus for manufacturing an element structure according to the first embodiment of the present invention. It is a schematic cross section which shows the resin film-forming part in the manufacturing apparatus of the element structure which concerns on 1st Embodiment of this invention. It is a schematic cross section which shows the vaporizer | carburetor which concerns on 1st Embodiment of this invention. It is a schematic sectional drawing which shows the vaporizer | carburetor and element structure which concern on 1st Embodiment of this invention. It is a top view which shows the element structure manufactured by the manufacturing apparatus of the element structure which concerns on 1st Embodiment of this invention. It is an expanded sectional view of the important section of the above-mentioned element structure. It is process drawing which shows the process in the manufacturing method of the element structure which concerns on 1st Embodiment of this invention. It is process drawing which shows the process in the manufacturing method of the element structure which concerns on 1st Embodiment of this invention. It is process drawing which shows the process in the manufacturing method of the element structure which concerns on 1st Embodiment of this invention. It is process drawing which shows the process in the manufacturing method of the element structure which concerns on 1st Embodiment of this invention. It is process drawing which shows the process in the manufacturing method of the element structure which concerns on 1st Embodiment of this invention. It is a schematic sectional drawing which shows the modification of a structure of the element structure manufactured by the manufacturing apparatus of the element structure which concerns on 1st Embodiment of this invention. It is a schematic sectional drawing which shows the modification of a structure of the element structure manufactured by the manufacturing apparatus of the element structure which concerns on 1st Embodiment of this invention. It is a schematic sectional drawing which shows the modification of a structure of the element structure manufactured by the manufacturing apparatus of the element structure which concerns on 1st Embodiment of this invention.

Hereinafter, a vaporizer and element structure manufacturing apparatus according to a first embodiment of the present invention will be described with reference to the drawings.
FIG. 1 is a schematic diagram showing an element structure manufacturing apparatus according to this embodiment. FIG. 2 is a schematic diagram showing an element structure manufacturing apparatus according to this embodiment. FIG. 3 is a schematic diagram showing a vaporizer according to the present embodiment. In FIG. 1, reference numeral 1000 denotes an element structure manufacturing apparatus.

The element structure manufacturing apparatus 1000 according to the present embodiment manufactures an element structure such as an organic EL element, as will be described later. As shown in FIG. 1, the manufacturing apparatus 1000 includes a first layer forming unit 201, a resin film forming unit 100, a localization processing unit 202, a second layer forming unit 203, and a functional layer that becomes an organic EL layer. The functional layer forming unit 204 for forming the core, the core chamber 200, and a load lock chamber 210 connected to the outside. The core chamber 200 is connected to the first layer forming unit 201, the resin film forming unit 100, the localization processing unit 202, the second layer forming unit 203, the functional layer forming unit 204, and the load lock chamber 210.

In the inside of the load lock chamber 210, a substrate transferred from another device or the like to the element structure manufacturing apparatus 1000 is inserted. For example, a substrate transfer robot (not shown) is disposed in the core chamber 200. Thereby, between the core chamber 200 and each of the first layer forming unit 201, the resin film forming unit 100, the localization processing unit 202, the second layer forming unit 203, the functional layer forming unit 204, and the load lock chamber 210. This makes it possible to transport the substrate. The substrate can be transferred to the outside of the element structure manufacturing apparatus 1000 via the load lock chamber 210. The core chamber 200, the

film forming chambers

100, 201, 202, 203, 204 and the load lock chamber 210 constitute a vacuum chamber to which a vacuum exhaust system (not shown) is connected.

By manufacturing the element structure 10 using the element structure manufacturing apparatus 1000 having the above-described configuration, each manufacturing process can be automated, and at the same time, efficient manufacturing can be performed using a plurality of film formation chambers. It is possible to improve productivity.

The first layer forming portion 201 covers the functional layer 3 disposed on the one surface side 2a of the substrate 2 in the element structure 10 to be described later, and has a local convex portion, such as silicon nitride (SiN _x ). The first layer 41 made of the inorganic material is formed. The first layer formation unit 201 is a film formation chamber in which the first layer 41 is formed by, for example, a CVD (Chemical Vapor Deposition) method, a sputtering method, an ALD (Atomic Layer Deposition) method, or the like.

The functional layer forming unit 204 forms the functional layer 3 in the element structure 10 described later. Note that the functional layer forming unit 204 may be provided outside the load lock chamber 210.

The second layer forming unit 203 forms a second layer 42 made of an inorganic material like the first layer 41 so as to cover the first layer 41 and the resin material 51 in the element structure 10 to be described later. It is a room. In addition, when the 2nd layer 42 and the 1st layer 41 consist of the same material, the 2nd layer formation part 203 and the 1st layer formation part 201 are set as the same structure, or one film-forming chamber ( The second layer 42 and the first layer 41 can also be formed using a common film formation chamber.

Further, in the case where either the second layer forming unit 203 and the first layer forming unit 201 or the common film forming chamber is configured by a plasma CVD apparatus, the forming

units

201 and 203 and the film forming chamber are In addition to the functions described above, the functions of the localization processing unit 202 described later can be provided. For example, a substrate on which a resin film is formed is loaded into a plasma CVD apparatus, and plasma is generated by introducing an oxidizing gas, thereby etching the resin film and localizing the resin film to form a resin material. it can. Thereafter, the second layer 42 can be formed in the plasma CVD apparatus as it is.

The resin film forming unit 100 supplies the vaporized resin material to the inside of the resin film forming unit 100, forms a resin material film made of a resin material on the first layer 41, and cures the resin material film to form a resin. A film formation chamber for forming a film.

As shown in FIG. 2, the resin film forming unit 100 includes a chamber 110 whose internal space can be decompressed, and a vaporizer 300 that supplies the vaporized resin material to the chamber 110 (processing chamber).

The internal space of the chamber 110 is composed of an upper space 107 and a lower space 108 as will be described later.
An unillustrated evacuation device (evacuation means, vacuum pump, etc.) is connected to the chamber 110, and the evacuation device can evacuate the gas in the internal space so that the internal space of the chamber 110 becomes a vacuum atmosphere. It is configured.

As shown in FIG. 2, a shower plate 105 is arranged in the internal space of the chamber 110, and an upper space 107 is formed above the shower plate 105 in the chamber 110. A top plate 120 made of a material that can transmit ultraviolet light, such as quartz, is provided at the top of the chamber 110, and an ultraviolet light irradiation device 122 (UV irradiation device) is disposed above the top plate 120. . Here, the shower plate 105 is also formed of a member that can transmit ultraviolet light, so that the ultraviolet light that has passed through the top plate 120 from the irradiation device 122 and introduced into the upper space 107 further passes through the shower plate 105, It becomes possible to proceed to the lower space 108 located below the shower plate 105. As a result, an acrylic material film (resin material film) formed on the substrate S, which will be described later, is irradiated with ultraviolet light after film formation to cure the acrylic material film and form an acrylic resin film (resin film). Is possible.

The chamber 110 is provided with a heating device (not shown). The temperature of the inner wall surface of the chamber 110 constituting the upper space 107 and the lower space 108 can be set to be equal to or higher than the vaporization temperature of the resin material, preferably about 40 to 250 ° C., and is controlled by a heating device.

In the lower space 108 located below the shower plate 105 in the chamber 110, a stage 102 (substrate holding part) on which the substrate S is placed is disposed.

In stage 102, the position where the substrate is to be placed on the surface is predetermined. The stage 102 is disposed in the chamber 110 with its surface exposed. Reference numeral S denotes a substrate disposed at a predetermined position on the surface of the substrate stage 102. The stage 102 is provided with a substrate cooling device 102a for cooling the substrate S.

The substrate cooling device 102 a supplies a coolant into the stage 102 to cool the substrate S on the upper surface of the stage 102. Specifically, the temperature of the substrate S on which the resin material film is formed is controlled by the cooling device 102a built in the stage 102 (substrate holding unit) on which the substrate S is placed, and is preferably equal to or lower than the vaporization temperature of the resin material. Is controlled to below zero degree (0 ° C.), for example, about −30 ° C. to 0 ° C.

A shower plate 105 is provided above the stage 102 so as to face the entire surface of the stage 102.
The shower plate 105 is composed of a plate-shaped member made of an ultraviolet light transmitting material such as quartz provided with a large number of through holes, and divides the internal space of the chamber 110 into an upper space and a lower space.

A mask (not shown) is provided in the lower space 108, and the position of this mask can be set to a predetermined position during film formation. When the substrate moves, the mask is movable so as to retract from the substrate.

The upper space 107 of the chamber 110 communicates with the vaporizer 300 via a pipe 112 (resin material supply pipe) and a valve 112V. The vaporized resin material can be supplied to the upper space 107 of the chamber 110 through the resin material supply pipe 112.

One end of a resin material bypass pipe 113 having a valve 113V is connected to a position closer to the vaporizer 300 than the valve 112V of the resin material supply pipe 112 (first pipe). The other end of the resin material bypass pipe 113 (second pipe) is connected to the outside (a part different from the film formation chamber, outside the film formation chamber) via the exhaust pipe 114, and gas is passed through the resin material bypass pipe 113. Can be exhausted. The exhaust pipe 114 is connected to a liquefaction recovery device, and can liquefy and recover the resin material.

The opening / closing drive of the valve 112V and the valve 113V is controlled by the control unit 400. The control unit 400 has a film forming state in which the vaporized resin material from the vaporizer 300 is supplied into the chamber 110, and a non-generated state in which the vaporized resin material from the vaporizer 300 is exhausted to the outside and not supplied into the chamber 110. The film state is controlled to be switchable.

The valve 112V, the valve 113V, and the control unit 400 have a selection function of supplying the resin material into the chamber 110 through the resin material supply pipe 112 or exhausting the resin material to the outside of the chamber 110 through the resin material bypass pipe 113. The switch part which has is comprised.

The vaporizer 300 can supply the vaporized resin material to the chamber 110. As shown in FIGS. 2 and 3, the vaporizer 300 includes a vaporization tank 130, a discharge unit 132, and a resin material raw material container 150.

As shown in FIGS. 2 and 3, the vaporization tank 130 includes an internal space 130a for vaporizing the liquid resin material, and a discharge unit 132 for spraying the liquid resin material is disposed above the internal space 130a. Has been. The vaporization tank 130 is formed in a substantially cylindrical shape, but may have other cross-sectional shapes. The inner surface of the vaporization tank 130 can be made of, for example, SUS, Al, or the like.

Connected to the discharge section 132 are one end of a resin material liquid supply pipe 140 connected to the resin material raw material container 150 via a valve 140V and a carrier gas supply pipe 130G for supplying a carrier gas such as nitrogen gas. Has been. The other end of the resin material liquid supply pipe 140 is connected to the resin material raw material container 150 and is located inside the liquid resin material stored in the resin material raw material container 150.

A pressurized gas supply pipe 150G for supplying a material liquid such as nitrogen gas is connected to the resin material raw material container 150, and the liquid resin material pressurized by increasing the internal pressure of the resin material raw material container 150 is a resin. The liquid can be supplied to the material liquid supply pipe 140.

The discharge unit 132 is configured to spray the liquid resin material supplied from the resin material liquid supply pipe 140 into the internal space of the vaporization tank 130 together with the carrier gas. The discharge part 132 is provided in the approximate center position of the top part of the vaporization tank 130.

As shown in FIGS. 2 and 3, the vaporization tank 130 is provided with a heating unit 135 at a lower position of the vaporization tank 130. The heating unit 135 is arranged to divide the internal space into an upper space and a lower space. Below the heating unit 135, a space between the heating unit 135 and the storage bottom 136 s is defined as a storage unit 136. The warming part 135 can be regarded as a warming bottom part, and the vaporizing tank 130 is configured to have a double bottom structure by the warming part 135 (heating bottom part) and the storage bottom part 136s. The vaporization tank 130 is provided with a vacuum gauge PG so that the internal pressure can be measured.
In the vaporization tank 130, a space between the heating unit 135 and the discharge unit 132 is a vaporization space 130 a above the heating unit 135.

The heating unit 135 is provided below the discharge unit 132 in the vaporization space 130a, and heats and vaporizes the liquid resin material sprayed from the discharge unit 132.
The upper surface (one surface) of the heating unit 135 is a vaporization surface with which the liquid resin material sprayed from the discharge unit 132 comes into contact. On the upper surface of the heating unit 135, a top portion 135a having the highest height on the upper surface of the heating unit 135 is provided at a substantially central position of the upper surface. An inclined surface 135b (one surface) inclined downward from the top portion 135a toward the outer peripheral region is provided, and the upper surface of the heating portion 135 is conical or spherical.

The position of the top portion 135a is the central position of the heating unit 135, but it may not be this position. For example, it corresponds to the central position in the discharge direction (spraying direction) directly below the discharge unit 132 or the discharge unit 132. Preferably it is a position. The inclination angle of the inclined surface 135b is not particularly limited as long as the resin material can flow down, but can preferably be set in the range of 3 ° to 45 °.

The peripheral part of the warming part 135 is fixed to the side wall 130h of the vaporization tank 130 at the outer periphery of the peripheral part. A plurality of through holes 135 c communicating with 136 are provided.

A temperature control device that controls the temperature of the surface in contact with the internal space is provided on the heating unit 135 and the side wall 130 h of the vaporization tank 130. Specifically, the side wall 130 h is provided with a heater 135 d that heats the upper surface 135 a of the heating unit 135 and a heater 130 d that heats the side wall 130 h that is in contact with the vaporization space 130 a above the heating unit 135. ing.

The heater 135d is a sheathed heater embedded in the heating unit 135. The heater 130d is a linear resistance heating device and is wound around and attached to the outer periphery of the vaporization tank 130. The heater 130d heats the vaporization tank 130 to prevent adhesion and re-liquefaction, while in the vaporization tank 130. The material can be vaporized.

The resin material supply pipe 112 (first pipe) connected to the vaporization space 130a is also provided with a heater 112d as a similar temperature adjusting device. The heater 112d is wound around the resin material supply pipe 112 (first pipe), and the vaporized resin material is not condensed on the wall surface.
The resin material bypass pipe 113 is provided with a heater as a similar temperature adjusting device.

These

heaters

130d, 135d, 112d can prevent the liquefaction of the resin material by setting the surface temperature exposed to the vaporized resin material to be higher than the vaporization temperature of the resin material. At the same time, the temperature is set so as to reduce the heat solidification of the resin material as much as possible. The reservoir 136 is not heated, or the temperature of the reservoir 136 is set to be lower than the vaporization temperature of the resin material.

The storage unit 136 is disposed below the heating unit 135 in the internal space of the vaporization tank 130, and the liquid resin material that has not been vaporized by the heating unit 135 flows down from the through hole 135c and is stored. A drain 136b having a valve 136V is provided in the storage bottom 136s of the storage 136, and the stored resin material can be discharged to the outside. Moreover, the storage part 136 is set below the vaporization temperature of a resin material, and specifically, it is preferable to set it as room temperature.

In this embodiment, an ultraviolet curable resin material may be used as the resin material. The ultraviolet curable resin material may be partially polymerized or altered by heating in the heating unit 135. The resin changed in this way has an evaporating temperature and does not evaporate in the heating unit 135. Resin that does not evaporate flows on the inclined surface 135b of the heating unit 135 and accumulates in the storage bottom 136s.

When the resin material is vaporized in the vaporizer 300 according to the present embodiment, the

heater

130d and 135d are used to heat the heating unit 135 and the side wall 130h of the vaporization tank 130, and the heater 112d is used to heat the resin material. The supply pipe 112 (first pipe) is heated.

At the same time, the control unit 400 closes the valve 112V so that the gas cannot flow into the chamber 110, and opens the valve 113V so that the gas can flow into the resin material bypass pipe 113.

In this state, the internal pressure of the resin material raw material container 150 is increased, and the liquid resin material supplied from the resin material liquid supply pipe 140 is sprayed from the discharge unit 132 to the internal space of the vaporization tank 130 together with the carrier gas. At this time, the resin material and the carrier gas supplied to the discharge unit 132 can be further heated.

The resin material sprayed into the internal space of the vaporizing tank 130 together with the carrier gas from the discharge unit 132 is vaporized inside the heated vaporizing tank 130. At this time, the resin material that has reached the heating unit 135 is vaporized on the upper surface of the heating unit 135, but the liquid resin material without being vaporized is heated by the inclination of the inclined surface 135 b of the heating unit 135. It flows down toward the periphery and drops on the storage unit 136 without stopping on the heating unit 135. Thereby, it can prevent that the vaporization area in the heating part 135 reduces with a liquid resin material, and can aim at stabilization of the vaporization amount.

At the same time, the liquid resin material flows down toward the periphery of the heating unit 135 and does not stay on the heating unit 135 and is dropped onto the storage unit 136 so that it is overheated on the heating unit 135 and does not solidify. Even if a part of the liquid is solidified, the liquid resin material is dropped into the storage portion 136. Thereby, it can prevent that the vaporization area in the heating part 135 decreases with the solidified resin material, and can stabilize vaporization amount.

While the resin material is constantly vaporized, the control unit 400 opens the valve 112V so that gas can flow into the chamber 110 and closes the valve 113V. Then, the resin material bypass pipe 113 is in a state where gas cannot flow in. Thereby, the vaporized resin material is supplied to the chamber 110, and the film formation process can be performed.
According to the vaporizer 300 in the present embodiment, it is possible to prevent the vaporized area in the heating unit 135 from being reduced by the liquid resin material due to the inclination of the inclined surface 135b of the heating unit 135, and the supply amount of the vaporized resin material Can be stabilized.

Also, by switching the valve 112V and the valve 113V by the control unit 400 by driving the switching unit, the resin material is supplied to the chamber 110, and the resin material to the resin material bypass pipe 113 (second pipe) is supplied. Supply can be selected. For this reason, since the supply amount of the vaporized resin material supplied to the chamber 110 can be stabilized, it is possible to prevent the film formation rate from fluctuating and stably form a resin material film having excellent film characteristics. It becomes. Furthermore, since the resin material can be continuously vaporized without introducing the resin material into the chamber 110 when the substrate S is replaced and the mask is aligned in the chamber 110, the generation / stop of vapor generation of the vaporized resin material is stopped. The generation rate of steam can be made substantially constant without repeating the above.

For example, the resin film forming unit 100 performs film formation of an ultraviolet curable acrylic resin material having a vaporization temperature of about 40 to 250 ° C. and ultraviolet irradiation for curing the formed resin material in the same chamber 110. It is configured to be possible. Thereby, it becomes possible to perform any processing process with the same apparatus structure, and it can improve productivity.

Hereinafter, the element structure 10 manufactured by the element structure manufacturing apparatus 1000 according to the present embodiment will be described.
FIG. 4 is a schematic cross-sectional view showing the element structure according to the present embodiment. FIG. 5 is a plan view showing the element structure of FIG. FIG. 6 is an enlarged view showing a main part of the element structure. In each figure, the X-axis, Y-axis, and Z-axis directions indicate triaxial directions orthogonal to each other. In this embodiment, the X-axis and Y-axis directions are orthogonal to each other, and the Z-axis direction is vertical. Show.

The element structure 10 according to the present embodiment includes a substrate 2 including a device layer 3 (functional layer), a silicon nitride layer that is formed on the surface 2a of the substrate 2 and covers the functional layer 3, and has local protrusions. The first inorganic material layer 41 (first layer) made of an inorganic material such as a material (SiN _x ) and the second inorganic material in the same manner as the first layer 41 so as to cover the first inorganic material layer 41 A layer 42 (second layer). In the present embodiment, the element structure 10 includes a light emitting element having an organic EL light emitting layer.

The substrate 2 has a front surface 2a (first surface) and a back surface 2c (second surface), and is composed of, for example, a glass substrate or a plastic substrate. The shape of the board | substrate 2 is not specifically limited, In this embodiment, it forms in a rectangular shape. The magnitude | size, thickness, etc. of the board | substrate 2 are not specifically limited, The board | substrate which has a suitable magnitude | size and thickness is used according to the magnitude | size of element size. In the present embodiment, a plurality of element structures 10 are manufactured from an assembly of the same elements manufactured on one large substrate S.

Device layer 3 (functional layer) is composed of an organic EL light emitting layer including an upper electrode and a lower electrode. In addition to this, the device layer 3 may be composed of various functional elements including materials that easily deteriorate due to moisture, oxygen, and the like, such as a liquid crystal layer in a liquid crystal element and a power generation layer in a power generation element.

The device layer 3 is formed in a predetermined region of the surface 2a of the substrate 2. The planar shape of the device layer 3 is not particularly limited and is formed in a substantially rectangular shape in the present embodiment, but other shapes such as a circular shape and a linear shape may be adopted. The device layer 3 is not limited to the example of being disposed on the front surface 2a of the substrate 2, but may be disposed on at least one of the front surface 2a and the back surface 2c of the substrate 2.

1st inorganic material layer 41 (1st layer) is provided in the surface 2a of the board | substrate 2 with which the device layer 3 is arrange | positioned, and comprises the convex part which coat | covers the surface 3a and the side surface 3s of the device layer 3. FIG. The first inorganic material layer 41 has a three-dimensional structure that protrudes upward in FIG. 6 from the surface 2 a of the substrate 2.

The first inorganic material layer 41 is made of an inorganic material capable of protecting the device layer 3 from moisture and oxygen. In the present embodiment, the first inorganic material layer 41 is composed of silicon nitride (SiN _x ) having excellent water vapor barrier properties, but is not limited to this material. The first inorganic material layer 41 may be composed of another silicon compound such as silicon oxide or silicon oxynitride, or another inorganic material having a water vapor barrier property such as aluminum oxide.

The first inorganic material layer 41 is formed on the surface 2a of the substrate 2 using an appropriate mask, for example. In the present embodiment, the first inorganic material layer 41 is formed using a mask having a rectangular opening having a size that can accommodate the device layer 3. The film forming method is not particularly limited, and a CVD (Chemical Vapor Deposition) method, a sputtering method, an ALD (Atomic Layer Deposition) method, or the like is applicable. The thickness of the first inorganic material layer 41 is not particularly limited, and is, for example, 200 nm to 2 μm.

Similar to the first inorganic material layer 41, the second inorganic material layer 42 (second layer) is composed of an inorganic material capable of protecting the device layer 3 from moisture and oxygen. It is provided on the surface 2 a of the substrate 2 so as to cover the surface 41 a and the side surface 41 s of the layer 41. In the present embodiment, the second inorganic material layer 42 is composed of silicon nitride (SiN _x ) having excellent water vapor barrier properties, but is not limited to this material. The second inorganic material layer 42 may be composed of another silicon compound such as silicon oxide or silicon oxynitride, or another inorganic material having a water vapor barrier property such as aluminum oxide.

The second inorganic material layer 42 is formed on the surface 2a of the substrate 2 using, for example, an appropriate mask. In the present embodiment, the second inorganic material layer 42 is formed using a mask having a rectangular opening having a size capable of accommodating the first inorganic material layer 41. The film forming method is not particularly limited, and a CVD (Chemical Vapor Deposition) method, a sputtering method, an ALD (Atomic Layer Deposition) method, or the like is applicable. The thickness of the second inorganic material layer 42 is not particularly limited, and is, for example, 200 nm to 2 μm.

The element structure 10 according to the present embodiment further includes a first resin material 51. The first resin material 51 is unevenly distributed around the first inorganic material layer 41 (convex portion). In the present embodiment, the first resin material 51 is interposed between the first inorganic material layer 41 and the second inorganic material layer 42, and the side surface 41 s of the first inorganic material layer 41 and the surface 2 a of the substrate 2. Is unevenly distributed at the boundary 2b. The first resin material 51 has a function of filling the gap G (FIG. 6) between the first inorganic material layer 41 formed in the vicinity of the boundary 2b and the substrate surface 2a.

In FIG. 6, the peripheral structure of the boundary portion 2b in the element structure 10 is shown in an enlarged manner. Since the first inorganic material layer 41 is formed of an inorganic material CVD film or sputtered film, the coverage characteristic (step coverage) with respect to the concavo-convex structure surface of the substrate 2 including the device layer 3 is relatively low. As a result, as shown in FIG. 6, the first inorganic material layer 41 covering the side surface 3s of the device layer 3 has reduced coverage characteristics near the substrate surface 2a, and the coating film thickness is extremely small. There is a risk that the film may be absent.

Therefore, in the present embodiment, the first resin material 51 is unevenly distributed in the poorly coated region around the first inorganic material layer 41 as described above, so that moisture and oxygen from the poorly coated region to the inside of the device layer 3 can be obtained. To prevent intrusion. In addition, when the second inorganic material layer 42 is formed, the first resin material 51 functions as a base layer of the second inorganic material layer 42, so that the second inorganic material layer 42 is appropriately formed. Therefore, the side surface 41s of the first inorganic material layer 41 can be appropriately covered with a desired film thickness.

The first resin material 51 is formed by a method in which the resin material vaporized by spray vaporization is supplied to the substrate surface 2a and condensed to form a resin material film, and after the resin material film is cured, unnecessary portions are removed. It is formed by a localization process.

Hereinafter, a method for manufacturing an element structure using the device for manufacturing an element structure according to the present embodiment will be described.
7 to 11 are process diagrams schematically showing a method for forming the first resin material 51 in the element structure manufacturing method according to the present embodiment.

(Example of device layer formation process)
First, in the element structure manufacturing apparatus 1000 shown in FIG. 1, the substrate S carried into the core chamber 200 from the load lock chamber 210 is transported from the core chamber 200 to the functional layer forming unit 204 by a substrate transport robot (not shown). . In the functional layer forming unit 204, the device layer 3 (functional layer) is formed in a predetermined region on the substrate S.
In the present embodiment, the region to be the functional layer 3 is a plurality of regions on the substrate S, for example, four regions arranged at predetermined intervals of two each in the X-axis direction and the Y-axis direction, The region to be the functional layer 3 is used.

The method for forming the device layer 3 is not particularly limited, and can be appropriately selected depending on the material, configuration, and the like of the device layer 3. For example, the substrate S is transported to a film forming chamber or the like of the functional layer forming unit 204, and a predetermined material is deposited on the substrate S, sputtered, etc. A desired device layer 3 can be formed. The pattern processing method is not particularly limited, and for example, etching or the like can be employed.

Note that a detailed description of the specific structure of the element structure manufacturing apparatus 1000 is omitted in FIG. A configuration in which the functional layer forming unit 204 includes a large number of processing chambers and includes a transfer device that can transfer the substrate S between adjacent processing chambers can be employed. Or the structure which is not a vacuum apparatus is also employable. In other words, it is not necessary to go through the load lock chamber 210, and processing for the substrate S outside the element structure manufacturing apparatus 1000 can be made possible.

(Example of first layer formation process)
Next, the substrate S on which the device layer 3 is formed is unloaded from the functional layer forming unit 204 by a substrate transfer robot (not shown) and is loaded into the first layer forming unit 201 through the core chamber 200.

In the first layer forming unit 201, the first inorganic material layer 41 (first layer) is formed in a predetermined region on the substrate S including the region of the device layer 3 so as to cover the device layer 3. Thereby, the first inorganic material layer 41 covering the device layer 3 is formed on the substrate S so as to have a convex portion as shown in FIG.
In this step, for example, the first inorganic material layer 41 made of, for example, silicon nitride is formed as a part of the protective layer using a mask having a number of openings corresponding to the region of the first inorganic material layer 41. May be.

Here, the first layer forming unit 201 can include a CVD processing apparatus or a sputtering processing apparatus. In addition, although not shown, in the film forming chamber of the first layer forming unit 201, a stage for placing the substrate S, a mask placed on the substrate S, and the substrate S on the stage are supported. A mask alignment device for aligning the mask with respect to the film, a film forming material supply device, and the like are installed.

The substrate S on which the device layer 3 is formed is placed on the stage of the first layer forming unit 201 by a substrate transport robot or the like placed in the core chamber 200. A mask is arranged at a predetermined position on the substrate S by a mask alignment apparatus or the like so that the device layer 3 is exposed through the opening of the mask.
Then, for example, the first inorganic material layer 41 made of silicon nitride or the like is formed so as to cover the device layer 3 by the CVD method. In addition, the formation method of the 1st inorganic material layer 41 is not restricted to CVD method, For example, a sputtering method can also be employ | adopted. In this case, the first layer forming unit 201 is configured to have a sputtering apparatus.

(Example of resin material formation process to film formation process)
Next, the substrate S on which the first inorganic material layer 41 having convex portions is formed is unloaded from the first layer forming unit 201 by a substrate transfer robot (not shown), and the resin film forming unit 100 is passed through the core chamber 200. It is carried in.

The resin film forming unit 100 performs a step of forming a resin material film on the substrate S on which the first inorganic material layer 41 is formed and a step of forming a resin film by curing the resin material film. In this step, first, a resin material film made of, for example, a material of an ultraviolet curable acrylic resin is formed using the resin film forming unit 100.

In the resin film forming unit 100, first, the substrate S carried into the resin film forming unit 100 is placed on the stage 102. Before the substrate S is carried into the chamber 110, the gas in the chamber 110 is exhausted by the vacuum exhaust device, and the inside of the chamber 110 is maintained in a vacuum state. Further, when the substrate S is carried into the chamber 110, the vacuum state of the chamber 110 is maintained.

At this time, the chamber 110 is set by a heating device so that at least the temperatures of the inner surfaces of the upper space 107 and the lower space 108 are equal to or higher than the vaporization temperature of the resin material. At the same time, the substrate S placed on the stage 102 is cooled to a temperature lower than the vaporization temperature of the resin material together with the stage 102 by the substrate cooling device 102a.
Further, the resin material supply pipe 112 (first pipe) is heated to a temperature equal to or higher than the vaporization temperature of the resin material by the heater 112d.

Next, on the substrate S arranged on the stage 102, a mask (not shown) may be arranged at a predetermined position on the substrate S by a mask placing device or the like.

Before the substrate S is placed on the stage 102, the vaporization of the resin material is performed stably and stably in the vaporizer 300. During the vaporization stabilization process, the control unit 400 closes the valve 112V so that the gas cannot flow into the chamber 110, and opens the valve 113V so that the gas can flow into the resin material bypass pipe 113. Maintain the state to do.
Note that the vaporization of the resin material in the vaporizer 300 is preferably maintained for a necessary time before the film forming process according to the stability of the amount of the vaporized resin material supplied.

Subsequently, after the conditions such as the mask alignment state, the atmosphere in the chamber 110, the temperature of the inner wall of the chamber 110, the temperature of the resin material supply pipe 112, the temperature of the substrate S, and the like are in a predetermined state, the control unit 400 causes the valve 112V. And open / close state of the valve 113V. As a result, the valve 112V is opened and gas flows into the resin material supply pipe 112, and the valve 113V is closed and gas does not flow into the resin material bypass pipe 113. Thereby, the vaporized resin material is supplied to the chamber 110.

The vaporized resin material supplied from the vaporizer 300 is supplied from the upper space 107 into the lower space 108 via the shower plate 105 through the resin material supply pipe 112.
In the lower space 108, the vaporized resin material supplied almost evenly over the entire surface of the substrate S by the shower plate 105 is condensed on the substrate surface 2a to form a liquid resin material film 5a as shown in FIG. In the liquid resin material film 5a condensed on the substrate surface 2a, the film thickness of the resin material film 5a is increased due to surface tension at corners, recesses, gaps, and the like having an inferior angle on the substrate surface 2a.

At this time, the liquid film 5a may be formed only in a region such as a position close to the convex portion 41 (a nearby position) by a mask (not shown). It is preferable to control the supply amount of the resin material supplied from the vaporizer 300 in consideration of the liquefaction of the resin material and the film formation rate. The resin material liquefied on the surface of the substrate S enters a fine gap due to a capillary phenomenon or further agglomerates due to the surface tension of the resin material, so that the resin material film 5a is formed while smoothing fine irregularities on the substrate S. It becomes possible to do. Thereby, the film thickness of the resin material film 5a is increased at corners, recesses, gaps, and the like having an inferior angle on the surface of the substrate S. In particular, it is possible to fill a minute gap in the boundary portion 2b between the side surface 41s of the first inorganic material layer 41 and the surface 2a of the substrate 2 with the resin material film 5a.

Further, since the chamber 110 is heated, the vaporized resin material does not condense on the surface such as the inner wall of the chamber 110.

After a predetermined processing time has elapsed, after the liquid film 5a having a predetermined thickness is formed on the surface of the substrate S, the control unit 400 closes the valve 112V so that no gas can flow into the chamber 110, and The valve 113V is opened, and the gas can flow into the resin material bypass pipe 113.
Since the chamber 110 is continuously evacuated, the vaporized resin material is discharged to the outside of the chamber 110 and film formation is stopped.

In this state, the surface of the substrate S is irradiated with ultraviolet rays from the UV irradiation device 122 while maintaining the vacuum atmosphere in the chamber 110. The irradiated ultraviolet rays pass through the top plate 120 and the shower plate 105 made of an ultraviolet transmitting material such as quartz and reach the substrate S in the chamber 110.

A part of the ultraviolet rays irradiated toward the substrate S in the chamber 110 is incident on the surface of the substrate S, and a photopolymerization reaction occurs in the resin material film 5a made of a resin material formed on the surface of the substrate S. The liquid film 5a is cured. As shown in FIG. 9, the resin film 5 is formed on the surface of the substrate S. In this embodiment, an acrylic resin thin film is formed.
Next, a mask (not shown) is moved from the film forming position on the substrate S to the retracted position by a mask mounting device or the like.

(Example of resin material formation process-localization process)
Next, the substrate S on which the resin film 5 is formed is unloaded from the resin film forming unit 100 by a substrate transfer robot (not shown), and is loaded into the localization processing unit 202 through the core chamber 200.

Here, the localization processing unit 202 can be configured to include a dry etching processing apparatus, in particular, a plasma etching processing apparatus.
Although not shown, the localization processing unit 202 may be a parallel plate type plasma processing apparatus. In this case, the localization processing unit 202 places the substrate S on the electrode, introduces an etching gas into the chamber, and irradiates the chamber with the high frequency generated by the high frequency power source through the antenna. And a bias voltage is applied from the high frequency power source to the electrode on which the substrate S is placed. Ions existing in the plasma are drawn into the substrate placed on the electrode, and the resin film 5 formed on the surface of the substrate S is etched and removed.

Here, as shown in FIG. 10, the resin film 5 is etched by ions in the plasma generated from the etching gas. At this time, in order to draw ions toward the substrate S on the electrode, a bias voltage may be applied to the electrode.
The flat resin film 5 having a thin film thickness is removed by the etching, and a thicker resin film 5 than the flat part remains at corners, recesses, gaps, and the like having an inferior angle on the surface of the substrate S. This remaining portion becomes the first resin material 51.

When the first layer forming unit 201 and the second layer forming unit 203 have a sputtering device or a plasma CVD device, the forming

units

201 and 203 have not only a film forming function but also a localization process. The function of the unit 202 can be provided. In this case, for example, the same processing apparatus can be used as the first layer forming unit 201, the second layer forming unit 203, and the localization processing unit 202.

In the localization processing unit 202, as shown in FIG. 10, in the substrate S on which the resin film 5 is formed, most of the resin film 5 is removed by plasma etching as shown in FIG. This plasma processing can be performed for a predetermined processing time by calculating the processing time from the etching rate.

Furthermore, the localization processing unit 202 can be provided with a detection device. This detection apparatus measures the bias voltage applied to the electrode, determines that the resin film 5 on the substrate S has been almost removed by the change in the measurement value, and uses the determination result (detection result) as the end point of the etching process. .

As shown in FIG. 11, the first resin material 51 remaining on the substrate S by this dry etching process is localized at the boundary 2b between the side surface 41s of the first inorganic material layer 41 and the surface 2a of the substrate 2. (It exists locally). Further, the first resin material 51 is unevenly distributed in a portion where fine irregularities on the surface of the first inorganic material layer 41 can be smoothed.

(Example of second layer formation process)
The substrate S formed by localizing the first resin material 51 is unloaded from the localization processing unit 202 by a substrate transfer robot (not shown), and loaded into the second layer forming unit 203 via the core chamber 200. The

In the second layer forming portion 203, the second inorganic material layer is formed in a predetermined region on the substrate S including the convex portion so as to cover the first inorganic material layer 41 on which the first resin material 51 is formed. 42 (second layer) is formed.

In this step, similarly to the first inorganic material layer 41, the same material as that of the first inorganic material layer 41 is formed using a mask having a number of openings corresponding to the region of the second inorganic material layer 42. For example, the second inorganic material layer 42 (second layer) made of silicon nitride is formed. Thus, the device layer 3 (functional layer) is covered with the first inorganic material layer 41 (first layer), the first resin material 51, and the second inorganic material layer 42 (second layer), and the device layer 3 can function as a protective layer for protecting 3.

Here, the second layer forming unit 203 can include a CVD processing apparatus or a sputtering processing apparatus.
The second layer forming unit 203 can have the same device configuration as the first layer forming unit 201 described above. For example, the same processing apparatus can be used as the first layer forming unit 201 and the second layer forming unit 203, or the second layer forming unit 203 can have the function of the first layer forming unit 201. .
Further, when the second layer forming unit 203 is a plasma CVD processing apparatus, the function of the localization processing unit 202 can be provided. If the first resin material 51 is localized in the second layer forming portion 203, the second inorganic material layer 42 (second layer) can be formed as it is after the localization.

Thereafter, the substrate S on which the second inorganic material layer 42 is formed is unloaded from the second layer forming unit 203 by a substrate transfer robot (not shown), and the element structure body via the core chamber 200 and the load lock chamber 210. It is carried out of the manufacturing apparatus 1000.

In the element structure manufacturing apparatus 1000 according to the present embodiment, the resin film 5 is formed by the resin film forming unit 100 and the first resin material 51 localized by the plasma etching process by the localization processing unit 202 is used. Form. After that, by forming the second inorganic material layer 42 (second layer), the second inorganic material layer 42 (second layer) is formed at a location requiring barrier properties as a protective layer, such as the boundary portion 2b. Can be reliably formed. In addition, since the vaporizer 300 can stabilize the amount of resin material supplied, the time required for the film formation process of the resin material film can be shortened, the film formation rate can be stabilized, and fluctuations in film characteristics can be prevented. Is possible.

Hereinafter, another example of the element structure manufactured by the element structure manufacturing apparatus 1000 according to the present embodiment will be described.

In the element structure 10 in this example manufactured by the element structure manufacturing apparatus 1000 according to the present embodiment, the resin material is unevenly distributed in the boundary portion 2b around the first inorganic material layer 41 (convex portion). For example, the resin may remain on the surface 2a of the substrate 2 other than the boundary portion 2b, the surface 41a of the first inorganic material layer 41, or the like.

In this case, the second inorganic material layer 42 (second layer) has a region laminated on the first inorganic material layer 41 via the second resin material 52 as shown in FIG. become. The second resin material 52 is interposed between the first inorganic material layer 41 and the second inorganic material layer 42, and the surface of the first inorganic material layer 41 is independent of the first resin material 51. 41a is unevenly distributed.

As described above, according to the element structure 10 according to the present embodiment, the side surface of the device layer 3 is covered with the first inorganic material layer 41 (first layer) and the second inorganic material layer 42 (second layer). Therefore, it is possible to prevent moisture and oxygen from entering the device layer 3.

Moreover, according to this embodiment, since the 1st resin material 51 is unevenly distributed in the boundary part 2b, the fall of the barrier characteristic accompanying the coverage defect of the 1st inorganic material layer 41 or the 2nd inorganic material layer 42 is carried out. And stable device characteristics can be maintained over a long period of time.

The element structure 20 according to the present example further includes a second resin material 52 interposed between the first inorganic material layer 41 and the second inorganic material layer 42 as shown in FIG. The second resin material 52 is unevenly distributed on the surface of the first inorganic material layer 41 independently of the first resin material 51.

In the element structure 20 according to the present example, the surface of the first inorganic material layer 41 is not necessarily flat. The case where unevenness | corrugation is formed because P mixes in a film | membrane is illustrated. When particles are mixed into the first inorganic material layer 41, the coverage characteristics of the first inorganic material layer 41 with respect to the device layer 3 may be deteriorated, and desired barrier characteristics may not be obtained.

Therefore, the element structure 20 according to the present example has a structure in which the second resin material 52 is filled in the poorly coated portion of the first inorganic material layer 41 caused by the mixing of the particles P or the like. Typically, the second resin material 52 is unevenly distributed due to surface tension at a boundary portion 32b between the surface of the first inorganic material layer 41 and the peripheral surface of the particles P. Thereby, the coverage of the device layer 3 is enhanced, and the second inorganic material layer 42 can be appropriately formed by the second resin material 52 functioning as a base. Note that a thin resin film may be formed on a flat portion during film formation. A resin film thicker than the flat portion is formed around the particle P due to surface tension.

The second resin material 52 is formed by the same method as the first resin material 51. The second resin material 52 may be made of the same organic material as the first resin material 51. In this case, the first resin material 51 and the second resin material 52 can be simultaneously formed in the same process.

Here, in the localization processing unit 202, the thin portion is removed by etching, and the thick portion remains, that is, the resin film 5 is removed except for the portion where the particles P exist, and the first inorganic material layer 41 is removed. When the film is exposed, etching of the resin film 5 is stopped. Thereby, when the convex portion is viewed from above in the vertical direction, the resin film 5 at the boundary portion 32b hidden by the particles P is not over-etched, and the resin film 5 is reliably attached to the boundary portion 32b around the particles P. Remain. As a result, the second resin material 52 exhibits a gentle surface shape at the boundary portion 32b in the vicinity of the particle P. If the particles P are not present at all, when the resin film 5 is substantially removed by anisotropic etching, the resin film 5 is completely removed and the first inorganic material layer 41 is exposed.
Note that the etching can be stopped based on the result of plasma emission spectrum analysis or the elapsed time of anisotropic etching.
At this time, the resin film 5 is not removed at the boundary portion 2b, and the resin film 5 is localized, whereby the first resin material 51 is formed. Similarly, the second resin material 52 is formed by the resin film 5 being localized without the resin film 5 being removed at the boundary portion 32b.

Also in this example, it is possible to obtain the same effect as that of the manufacturing of the element structure 10 described above. Further, according to this example, since the film quality deterioration due to the mixing of the particles P can be compensated for by the second resin material 52, it is possible to improve productivity while ensuring desired barrier characteristics.

As shown in FIG. 14, the element structure 30 according to this example includes, for example, a substrate 21 having a device layer 3 (functional layer), a protrusion 40 that covers the side surface 3 s of the device layer 3, a protrusion 40, and It has a first inorganic material layer 41 (first layer) and a second inorganic material layer 42 (second layer) formed on the surface of the substrate 21 so as to cover the device layer 3.

The convex portion 40 is formed on the surface 21 a of the substrate 21, and has a concave portion 40 a that accommodates the device layer 3 in the central portion. In this example, the bottom surface of the recess 40a is formed at a position higher than the surface 21a of the substrate 21, but it may be formed at the same height as the surface 21a or at a position lower than the surface 21a. May be.

The element structure 30 according to the present example further includes a resin material 53 interposed between the first inorganic material layer 41 and the second inorganic material layer 42. The resin material 53 is unevenly distributed on the boundary portion 21 b between the outer side surface of the convex portion 40 and the surface 21 a of the substrate 21, and the boundary portion 22 b between the inner side surface of the convex portion 40 and the device layer 3. Thereby, the coating defect of the 1st inorganic material layer 41 and the 2nd inorganic material layer 42 with respect to the convex part 40 and the surface 3a of the device layer 3 can be suppressed, and the improvement of a barrier characteristic can be aimed at. The resin material 53 can be formed by the same method as the first resin material 51 and the second resin material 52 described above.

Thus, in the board | substrate S which has an unevenness | corrugation, the part which cannot be covered with an inorganic material layer is planarized more by the unevenly distributed resin material. The inorganic material layer formed on the resin material can be formed more uniformly and with good coverage. Furthermore, the resin material has a lower seal against water or the like than the inorganic material layer, but the unevenly distributed resin material is covered with the inorganic material layer and is not exposed to the outside atmosphere, so that the sealing performance is improved. That is, it is preferable to unevenly distribute the resin material so that it is not film-like and is not exposed to the outside atmosphere.
While preferred embodiments of the present invention have been described and described above, it should be understood that these are exemplary of the invention and should not be considered as limiting. Additions, omissions, substitutions, and other changes can be made without departing from the scope of the invention. Accordingly, the invention is not to be seen as limited by the foregoing description, but is limited by the scope of the claims.

For example, in the above embodiment, the second inorganic material layer 42 (second layer) covering the first inorganic material layer 41 (first layer) is configured as a single layer, but the second inorganic material layer 42 (second layer) may be formed of a multilayer film. In this case, a resin material that is unevenly distributed on the uneven portion of the substrate may be formed by supplying a resin material onto the substrate for each step of forming each layer, thereby further improving the barrier property.

Furthermore, in the above embodiment, after the formation of the first inorganic material layer 41 (first layer), the first resin material 51 is localized around the first inorganic material layer 41 serving as a convex portion. However, before the first inorganic material layer 41 is formed by the first layer forming unit 201, the first resin material 51 is unevenly distributed around the device layer 3 by the resin film forming unit 100 and the localization processing unit 202. May be. Thereby, the covering efficiency of the device layer 3 by the first inorganic material layer 41 can be increased.

Examples of utilization of the present invention include sealing of electronic devices that dislike moisture such as organic EL devices and thin film Li batteries.

S, 2, 21 ...

substrates

2b, 21b, 22b, 32b ... boundary 3 ... device layer (functional layer)
10, 20, 30 ... element structure 40 ... convex portion 41 ... first inorganic material layer (first layer)
42 ... Second inorganic material layer (second layer)
51, 53 ... 1st resin material (resin material)
52. Second resin material (resin material)
53 ... Resin material 100 ... Resin film forming section (film forming chamber)
102 ... Stage 105 ... Shower plate 102a ... Substrate cooling device 112 ... Resin material supply pipe (first pipe)
112V ... Valve 113 ... Resin material bypass pipe (second pipe)
113V ... Bulb 122 ... UV irradiation device 130 ... Evaporation tank 130a ... Internal space 130d ... Heater 132 ... Discharge part 135 ... Heating part 135a ... Top part 135b ... Inclined surface 135c ... Through hole 135d ... Heater 136 ... Storage part 140 ... Resin material Liquid supply pipe 150 ... resin material raw material container 200 ... core chamber 201 ... first layer forming section (deposition chamber)
202 ... Localization processing unit 203 ... Second layer forming unit (deposition chamber)
204 ... functional layer forming part (deposition chamber)
210 ... Load lock chamber 300 ... Vaporizer 400 ... Control unit 1000 ... Element structure manufacturing apparatus

Claims

A vaporizer for supplying a vaporized resin material to an element structure manufacturing apparatus,
A vaporization tank having an internal space for vaporizing a liquid resin material;
In the internal space, a discharge unit that sprays the liquid resin material;
In the internal space, a heating unit that is disposed to face the discharge unit and heats and vaporizes the sprayed liquid resin material;
In the internal space, a storage unit that is disposed below the heating unit and in which the liquid resin material that has not been vaporized in the heating unit is dropped and stored;
With
Vaporizer.
As viewed from the discharge unit, one surface of the heating unit that contacts the liquid resin material sprayed from the discharge unit is inclined downward from the central region toward the outer peripheral region.
The vaporizer according to claim 1.
In the outer peripheral area of the heating part, a through hole communicating from the discharge part to the storage part is arranged,
The vaporizer according to claim 2.
The storage unit is set to a temperature lower than the heating unit.
The vaporizer according to claim 1 or claim 2.
The vaporization tank includes a temperature control device that controls the temperature of the wall surface in contact with the internal space.
The vaporizer as described in any one of Claims 1-4.
A first pipe for introducing the resin material vaporized from the vaporization tank toward a film forming chamber constituting the device manufacturing apparatus;
A second pipe for leading the resin material vaporized from the vaporization tank to a portion different from the film formation chamber;
A switching unit that is arranged between the vaporization tank and the film forming chamber, and allows the first pipe and the second pipe to be selected;
Comprising
The vaporizer as described in any one of Claims 1-5.
A first layer forming part for forming a first layer made of an inorganic material, covering a functional layer disposed on one surface side of the substrate and having a local convex part;
A resin material film made of the resin material is formed on the first layer so that the resin material vaporized from the vaporizer according to any one of claims 1 to 6 can be supplied, and the resin material A resin film forming section for curing the film to form a resin film;
When the first layer is viewed from a side cross section, a part of the resin film at a position including a boundary portion between the outer surface of the convex portion and one surface of the substrate is left, and the resin film at another position is left. A localization processing unit to be removed;
A second layer made of an inorganic material is formed so as to cover the convex portion on the one surface side, the resin material in which a part of the resin film is left, and the first layer exposed by the removal. A second layer forming part;
Having
Device structure manufacturing apparatus.
The localization processing unit removes the resin film by using a dry etching method so that a region including the top portion of the outer surface of the convex portion is exposed.
The device structure manufacturing apparatus according to claim 7.