JP6768918B2 - Vaporizer and device structure manufacturing equipment - Google Patents

Description

The present invention relates to a vaporizer and a device for manufacturing an element structure, and more particularly to a technique suitable for manufacturing an element structure having a laminated structure that protects a device or the like from oxygen, moisture, or the like.
The present application claims priority based on Japanese Patent Application No. 2017-03319 filed in Japan on February 21, 2017, the contents of which are incorporated herein by reference.

As an element containing a compound having a property of being easily deteriorated by water, oxygen, or the like, for example, an organic EL (Electroluminescence) element and the like are known. With respect to such an element, an attempt has been made to suppress the intrusion of moisture or the like into the element by forming a laminated structure in which a layer containing a compound and a protective layer covering the layer are laminated. For example, Patent Document 1 below describes a light emitting element having a protective film composed of a laminated film of an inorganic film and an organic film on an upper electrode layer.

As the organic film, acrylic resin or the like was used, and the resin material was vaporized and supplied to form a film.

Japanese Patent Application Laid-Open No. 2013-73880 International Publication No. 2014/196137 Pamphlet

The present inventors have found that by spraying a liquid resin into a heated vaporizer and heating it to vaporize it, steam can be stably supplied without raising the temperature excessively. However, a part of the sprayed resin material does not evaporate on the heated surface and forms a liquid film, so that the vaporized area on the heated surface may be reduced by the liquid resin material. As a result, the vaporization efficiency deteriorates, and the supply amount of the resin material supplied from the vaporizer to the film forming chamber decreases, so that there is a problem that the depotate (deposition rate) deteriorates. In particular, on the bottom surface of the vaporizer, if the sprayed resin material comes into contact with the liquefied resin material attached to the bottom surface, the resin material does not evaporate at this portion and the reduction of the vaporized area is promoted.
Further, on the bottom surface of the vaporizer, if the treatment time is long, the liquefied resin material not only adheres but also accumulates, and the vaporization rate is extremely lowered. For this reason, the amount of resin material not used for film formation increases, the vaporization efficiency decreases, and the liquefied resin material is not used for film formation and is wasted, so the amount of liquefaction is reduced and the vaporization rate There was a request to improve.

Here, if the heating temperature of the vaporizer is significantly raised above the evaporation temperature of the resin material in order to increase the vaporization rate, the resin material is polymerized and hardened by heat in the vaporizer, and further formation occurs. There is a problem that the film ratio decreases, which is not realistic.

Further, due to insufficient vaporization, the supply amount of the resin material supplied from the vaporizer to the film forming chamber is reduced, and there is a possibility that film formation is not sufficiently performed. In this case, for example, when the surface of the substrate having the device layer has irregularities, the boundary portion of the irregularities cannot be sufficiently covered with the resin film. There was a problem that coating defects could occur. When such a poor coating of the inorganic film occurs, it becomes impossible to prevent the intrusion of moisture from the portion where the poor coating occurs, so that it becomes difficult to secure sufficient barrier properties.

The present invention has been made in view of the above circumstances, and aims to achieve at least one of the following objects.
1. 1. To stabilize the vaporization rate.
2. To improve the steam supply condition of the resin material.
2. To prevent defects in film formation due to a decrease in vaporization rate.
3. 3. Ensuring barrier properties.

The vaporizer according to the first aspect of the present invention is a vaporizer for supplying a vaporized resin material to a manufacturing apparatus for an element structure.
A vaporization tank with an internal space for vaporizing a liquid resin material,
In the internal space, a discharge unit that sprays the liquid resin material and
In the internal space, a heating portion that is arranged to face the discharge portion and heats and vaporizes the sprayed liquid resin material, and a heating portion.
In the internal space, a storage portion that is arranged below the heating portion and in which the liquid resin material that has not been vaporized in the heating portion is dropped and stored.
With
The heating portion is provided with a top portion in the central region of one surface in contact with the liquid resin material sprayed from the discharge portion when viewed from the discharge portion.
The one surface is inclined downward so that the resin material can flow down from the top to the outer peripheral region.
The top corresponds to the center position of the discharge portion in the discharge direction.
In the vaporizer according to the first aspect of the present invention, the vaporization tank can have a double bottom structure by a storage bottom portion and a heating portion.
The vaporizer according to the first aspect of the present invention is a vaporizer for supplying a vaporized resin material to an apparatus for manufacturing an element structure, and includes an internal space for vaporizing a liquid resin material. The vaporization tank, the discharge part that sprays the liquid resin material in the internal space, and the liquid resin material that is arranged facing the discharge part in the internal space and sprayed are heated and vaporized. a sensing portion in said inner space, wherein arranged below the heating unit can be a resin material of said liquid that has not been vaporized in the pressurized temperature portion and a reservoir to be stored is dripped ..
In the vaporizer according to the first aspect of the present invention, one surface of the heating portion in contact with the liquid resin material sprayed from the discharge portion is directed from the central region to the outer peripheral region when viewed from the discharge portion. It may be inclined downward. In the vaporizer according to the first aspect of the present invention, a through hole communicating from the discharge portion to the storage portion may be arranged in the outer peripheral region of the heating portion.
In the vaporizer according to the first aspect of the present invention, the storage portion may have a temperature lower than that of the heating portion.
In the vaporizer according to the first aspect of the present invention, the vaporizer tank may include a temperature control device that controls the temperature of the wall surface in contact with the internal space thereof.
In the vaporizer according to the first aspect of the present invention, the resin material vaporized from the vaporization tank is introduced into a processing chamber (deposition chamber) constituting the manufacturing apparatus of the element structure. A pipe, a second pipe for leading the resin material vaporized from the vaporization tank to a portion different from the film forming chamber, and the first pipe arranged between the vaporization tank and the film forming chamber. And a switching unit that makes it possible to select the second pipe.
The apparatus for manufacturing an element structure according to a second aspect of the present invention covers a functional layer arranged on one surface side of a substrate and forms a first layer made of an inorganic material having local protrusions. A resin material film made of the resin material is formed on the first layer so that the resin material vaporized from the layer forming portion and the vaporizer according to the first aspect can be supplied, and the resin material film is cured. A part of the resin film at a position including a resin film forming portion forming the resin film and a boundary portion between the outer surface of the convex portion and one surface of the substrate when the first layer is viewed from the side cross section. A localization treatment unit that remains and removes the resin film at another position, the convex portion on one side of the surface, a resin material that retains a part of the resin film, and exposure by the removal. It has a second layer forming portion for forming a second layer made of an inorganic material so as to cover the first layer.
In the device for manufacturing the device structure according to the second aspect of the present invention, the localization processing unit uses a dry etching method so that the region including the top portion of the outer surface of the convex portion is exposed. , The resin film may be removed.

According to the vaporizer according to the first aspect of the present invention, the liquid resin material flows down from the heating part to the storage part, and the liquid resin material sprayed on the heating part stays on one surface of the heating part. There is nothing to do. Therefore, the amount of reliquefaction of the resin material sprayed on one surface of the heating portion can be reduced. At the same time, the liquid resin material sprayed on the heating portion does not stay on one surface of the heating portion. Therefore, the resin material polymerized by heating on one surface of the heating portion is flowed down to the lower storage portion, and the amount of the resin material polymerized by heating adhering to one surface of the heating portion can be reduced. Therefore, it is possible to prevent the vaporization of the resin material on one surface of the heating portion from being hindered. Therefore, it is possible to suppress the reduction of the vaporization rate in the vaporization tank and to stably supply the vaporized resin material.

According to the vaporizer according to the first aspect of the present invention, one surface of the heating portion in contact with the liquid resin material sprayed from the discharge portion is inclined downward from the central region to the outer peripheral region. As a result, the liquid resin material does not flow down on one surface of the heating portion due to the inclination, and the liquid resin material sprayed on the heating portion does not stay on one surface of the heating portion. Therefore, the amount of reliquefaction of the resin material sprayed on one surface of the heating portion can be reduced. At the same time, the liquid resin material sprayed on the heating portion does not stay on one surface of the heating portion. Therefore, the resin material polymerized by heating on one surface of the heating portion is flowed down to the lower storage portion, and the amount of the resin material polymerized by heating adhering to one surface of the heating portion is reduced. It is possible to prevent the vaporization of the resin material on one surface of the heating portion from being hindered. Therefore, it is possible to suppress the reduction of the vaporization rate in the vaporization tank and to stably supply the vaporized resin material.

According to the vaporizer according to the first aspect of the present invention, the internal space is divided into the upper space and the lower space by the heating portion because the through hole communicating from the discharge portion to the storage portion is arranged. It is divided and the lower side of the heating part is the storage part, and the unvaporized portion of the liquid resin material sprayed on the heating part flows down to the storage part through the through hole. It does not stay on one surface of this heating part. At the same time, the unvaporized resin material is not overheated for a long time on one surface of the heating part and polymerized, and even if a part of the resin material is polymerized, it is flowed down to the lower storage part by the liquid resin material. To. Further, the vaporized state can be stabilized by vaporizing the upper part of the internal space divided into the upper space and the lower space by the heating portion. Therefore, the vaporization of the resin material on one surface of the heating portion is not hindered, the reduction of the vaporization rate in the vaporization tank is suppressed, and the vaporized resin material can be stably supplied. ..

According to the vaporizer according to the first aspect of the present invention, the temperature of the storage portion is lower than that of the heating portion, so that the liquid resin material flowing down to the storage portion is heated in the storage portion. It does not polymerize, and the amount of polymerized resin material does not increase. Further, by setting the temperature of the storage unit lower than that of the heating unit, it is possible to reduce the influence of the storage unit on the temperature state of the heating unit.

According to the vaporizer according to the first aspect of the present invention, the vaporization tank can be set to a temperature suitable for vaporization by providing a temperature control device for the wall surface in contact with the internal space thereof. .. Further, since the wall surface is erected, the liquid resin material does not flow down the wall surface and stay on the wall surface. Further, since the resin material solidified by heating on the wall surface flows down to the lower storage portion, the heating portion can stably vaporize the upper side of the internal space, and the vaporized state can be stabilized. ..

Further, according to the vaporizer according to the first aspect of the present invention, by providing the first pipe, the second pipe, and the switching portion, the resin material can be stably supplied to the film forming chamber, and the film is formed. The rate can be stabilized to form a resin material film having desired film properties.

Further, according to the device for manufacturing the element structure according to the second aspect of the present invention, the resin material is stably supplied from the vaporizer to the film forming chamber, the film forming rate is stabilized, and the film has desired film characteristics. It is possible to form a resin material film. As a result, it becomes possible to reliably seal the functional layer with the first layer and the second layer by the localized resin material, and to manufacture an element structure having high barrier characteristics.

Further, in the device manufacturing apparatus for the element structure according to the second aspect of the present invention, the localization processing unit uses a dry etching method to expose a region including the top portion of the outer surface of the convex portion. In addition, since the resin film is removed, the substrate, the first layer made of an inorganic material which covers the substrate and the functional layer arranged on one surface side of the substrate and has local protrusions, and the first layer. A resin material made of an organic substance, which covers the first layer and is (only) arranged in the vicinity of a position including a boundary portion between the outer surface of the convex portion and one surface of the substrate when viewed from the side cross section. And the convex portion on one surface side, the resin material, and a second layer made of an inorganic material that covers the first layer exposed in the region where the resin material does not exist are easily formed. be able to. The localized resin material ensures that the functional layer is sealed by the first layer and the second layer, and does not cause unnecessary damage to the first layer. At this time, it becomes possible to easily remove unnecessary parts of the resin material and localize only the parts necessary for sealing, and it becomes possible to manufacture an element structure having high barrier characteristics. ..
The localization treatment unit removes a part of the resin film by using a dry etching method, and leaves a resin material in which a part of the resin film is localized on the substrate. The resin material remains around the convex portion or in the concave portion. Of the resin film, the resin film on the upper surface of the convex portion and the flat portion is removed.

In the device for manufacturing the device structure according to the second aspect of the present invention, the localization processing unit detects a change in a specific condition among the conditions for etching the resin film, and ends the etching process. It is preferable to have a detection device used as an etching device.
In the device for manufacturing the device structure according to the second aspect of the present invention, it is preferable that the resin film forming portion has a substrate cooling device that cools the substrate to a temperature lower than the vaporization temperature of the resin material.
In the device for manufacturing the element structure according to the second aspect of the present invention, it is preferable that the resin film-forming portion has a UV irradiation device that irradiates the resin material on the surface of the substrate with ultraviolet rays to cure the UV.
The apparatus for manufacturing the element structure according to the second aspect of the present invention is located between the first layer forming portion, the resin film forming portion, the localization processing portion, and the second layer forming portion. It is preferable to have a transport device for transporting the substrate.

According to the aspect of the present invention, it is possible to suppress the reduction of the vaporization rate in the vaporization tank, to supply a stable vaporized resin material, and to manufacture an element structure having high barrier characteristics. It is possible to achieve the effect of being able to do it.

It is a schematic schematic diagram which shows the manufacturing apparatus of the element structure which concerns on 1st Embodiment of this invention. It is a schematic cross section which shows the resin film-forming part in the manufacturing apparatus of the element structure which concerns on 1st Embodiment of this invention. It is a schematic cross section which shows the vaporizer which concerns on 1st Embodiment of this invention. It is a schematic sectional drawing which shows the vaporizer and the element structure which concerns on 1st Embodiment of this invention. It is a top view which shows the element structure manufactured by the manufacturing apparatus of the element structure which concerns on 1st Embodiment of this invention. It is an enlarged sectional view of the main part of the element structure. It is a process drawing which shows the process in the manufacturing method of the element structure which concerns on 1st Embodiment of this invention. It is a process drawing which shows the process in the manufacturing method of the element structure which concerns on 1st Embodiment of this invention. It is a process drawing which shows the process in the manufacturing method of the element structure which concerns on 1st Embodiment of this invention. It is a process drawing which shows the process in the manufacturing method of the element structure which concerns on 1st Embodiment of this invention. It is a process drawing which shows the process in the manufacturing method of the element structure which concerns on 1st Embodiment of this invention. It is schematic cross-sectional view which shows the modification of the structure of the element structure manufactured by the manufacturing apparatus of the element structure which concerns on 1st Embodiment of this invention. It is schematic cross-sectional view which shows the modification of the structure of the element structure manufactured by the manufacturing apparatus of the element structure which concerns on 1st Embodiment of this invention. It is schematic cross-sectional view which shows the modification of the structure of the element structure manufactured by the manufacturing apparatus of the element structure which concerns on 1st Embodiment of this invention.

Hereinafter, the vaporizer and the device for manufacturing the element structure according to the first embodiment of the present invention will be described with reference to the drawings.
FIG. 1 is a schematic schematic view showing a manufacturing apparatus for an element structure according to the present embodiment. FIG. 2 is a schematic schematic view showing an apparatus for manufacturing an element structure according to the present embodiment. FIG. 3 is a schematic schematic diagram showing a vaporizer in the present embodiment, and in FIG. 1, reference numeral 1000 is an apparatus for manufacturing an element structure.

The device structure manufacturing apparatus 1000 according to the present embodiment manufactures an element structure such as an organic EL element, as will be described later. As shown in FIG. 1, the manufacturing apparatus 1000 includes a first layer forming section 201, a resin film forming section 100, a localization processing section 202, a second layer forming section 203, and a functional layer serving as an organic EL layer. It has a functional layer forming portion 204 forming the above, a core chamber 200, and a load lock chamber 210 connected to the outside. The core chamber 200 is connected to the first layer forming section 201, the resin film forming section 100, the localization processing section 202, the second layer forming section 203, the functional layer forming section 204, and the load lock chamber 210.

Inside the load lock chamber 210, a substrate conveyed from another device or the like to the device structure manufacturing device 1000 is inserted. For example, a substrate transfer robot (not shown) is arranged in the core chamber 200. As a result, between the core chamber 200 and the respective first layer forming section 201, resin film forming section 100, localization processing section 202, second layer forming section 203, functional layer forming section 204, and load lock chamber 210. Allows the transfer of the substrate. The substrate can be transported to the outside of the device structure manufacturing apparatus 1000 via the load lock chamber 210. The core chamber 200, the film forming chambers 100, 201, 202, 203, 204, and the load lock chamber 210 each form a vacuum chamber to which a vacuum exhaust system (not shown) is connected.

By manufacturing the element structure 10 using the device structure manufacturing apparatus 1000 having the above configuration, each manufacturing process can be automated, and at the same time, efficient manufacturing can be performed using a plurality of film forming chambers. It is possible to increase productivity.

The first layer forming portion 201 covers the functional layer 3 arranged on the one surface side 2a of the substrate 2 in the element structure 10 described later, and has a local convex portion, such as a silicon nitride (SiN _x ). The first layer 41 made of the inorganic material of is formed. The first layer forming portion 201 is a film forming chamber for forming the first layer 41 by, for example, a CVD (Chemical Vapor Deposition) method, a sputtering method, an ALD (Atomic Layer Deposition) method, or the like.

The functional layer forming unit 204 forms the functional layer 3 in the element structure 10 described later. The functional layer forming portion 204 may be provided outside the load lock chamber 210.

The second layer forming portion 203 forms a film forming the second layer 42 made of an inorganic material like the first layer 41 so as to cover the first layer 41 and the resin material 51 in the element structure 10 described later. It is a room. When the second layer 42 and the first layer 41 are made of the same material, the second layer forming portion 203 and the first layer forming portion 201 have the same configuration, or one film forming chamber ( A common film forming chamber) can also be used to form the second layer 42 and the first layer 41.

Further, when any one of the second layer forming portion 203 and the first layer forming portion 201 or the common film forming chamber is composed of the plasma CVD apparatus, the forming portions 201, 203 and the forming chamber are described above. It is possible to have not only the above-mentioned functions but also the functions of the localization processing unit 202 described later. For example, a substrate on which a resin film is formed can be carried into a plasma CVD apparatus, and an oxidizing gas can be introduced to generate plasma, thereby etching the resin film and localizing the resin film to form a resin material. it can. After that, the second layer 42 can be formed as it is in the plasma CVD apparatus.

The resin film-forming unit 100 supplies the vaporized resin material to the inside of the resin film-forming unit 100, forms a resin material film made of the resin material on the first layer 41, and cures the resin material film to make a resin. It is a film forming chamber for forming a film.

As shown in FIG. 2, the resin film-forming unit 100 includes a chamber 110 whose internal space can be depressurized, and a vaporizer 300 for supplying the vaporized resin material to the chamber 110 (processing chamber).

The internal space of the chamber 110 is composed of an upper space 107 and a lower space 108, as will be described later.
A vacuum exhaust device (vacuum exhaust means, vacuum pump, etc.) (not shown) is connected to the chamber 110 so that the vacuum exhaust device can exhaust gas in the internal space so that the internal space of the chamber 110 has a vacuum atmosphere. It is configured in.

As shown in FIG. 2, a shower plate 105 is arranged in the internal space of the chamber 110, and the upper space above the shower plate 105 constitutes the upper space 107 in the chamber 110. A top plate 120 made of a member capable of transmitting ultraviolet light such as quartz is provided at the uppermost portion of the chamber 110, and an ultraviolet light irradiation device 122 (UV irradiation device) is arranged above the top plate 120. .. Here, the shower plate 105 is also formed of a member capable of transmitting ultraviolet light, so that the ultraviolet light introduced from the irradiation device 122 through the top plate 120 and into the upper space 107 further passes through the shower plate 105. It is possible to proceed to the lower space 108 located below the shower plate 105. As a result, the acrylic material film (resin material film) formed on the substrate S, which will be described later, is irradiated with ultraviolet light after the film formation to cure the acrylic material film and form the acrylic resin film (resin film). Is possible.

A heating device (not shown) is arranged in the chamber 110. The temperature of the inner wall surface of the chamber 110 constituting the upper space 107 and the lower space 108 can be set to be equal to or higher than the vaporization temperature of the resin material, preferably about 40 to 250 ° C., and is controlled by a heating device.

A stage 102 (board holding portion) on which the substrate S is placed is arranged in the lower space 108 located below the shower plate 105 in the chamber 110.

In the stage 102, the position where the substrate should be arranged on the surface is predetermined. The stage 102 is arranged in the chamber 110 with its surface exposed. Reference numeral S indicates a substrate arranged at a predetermined position on the surface of the substrate stage 102. The stage 102 is provided with a substrate cooling device 102a for cooling the substrate S.

The substrate cooling device 102a supplies a refrigerant inside the stage 102 to cool the substrate S on the upper surface of the stage 102. Specifically, the temperature of the substrate S on which the resin material film is formed is controlled by the cooling device 102a built in the stage 102 (board holding portion) on which the substrate S is placed, and is preferably equal to or lower than the vaporization temperature of the resin material. Is controlled to zero degree (0 ° C) or lower, for example, about −30 ° C to 0 ° C.

A shower plate 105 is provided at an upper position of the stage 102 so as to face the entire surface of the stage 102.
The shower plate 105 is composed of a plate-shaped member made of an ultraviolet transmissive material such as quartz provided with a large number of through holes, and divides the internal space of the chamber 110 into an upper space and a lower space.

A mask (not shown) is provided in the lower space 108, and the position of the mask can be set to a predetermined position at the time of film formation. When the substrate moves, the mask can be moved so as to retract from the substrate.

The upper space 107 of the chamber 110 communicates with the vaporizer 300 via a pipe 112 (resin material supply pipe) and a valve 112V. The vaporized resin material can be supplied to the upper space 107 of the chamber 110 via the resin material supply pipe 112.

One end of the resin material bypass pipe 113 having the valve 113V is connected to a position closer to the vaporizer 300 than the valve 112V of the resin material supply pipe 112 (first pipe). The other end of the resin material detour pipe 113 (second pipe) is connected to the outside (a portion different from the film forming chamber, the outside of the film forming chamber) via the exhaust pipe 114, and the gas is passed through the resin material detour pipe 113. Can be exhausted. The exhaust pipe 114 is connected to the liquefaction recovery device, and the resin material can be liquefied and recovered.

The opening / closing drive of the valve 112V and the valve 113V is controlled by the control unit 400. The control unit 400 has a film forming state in which the vaporized resin material from the vaporizer 300 is supplied into the chamber 110, and a non-formation state in which the vaporized resin material from the vaporizer 300 is exhausted to the outside and not supplied into the chamber 110. The membrane state and the state are controlled so as to be switchable.

The valve 112V, the valve 113V, and the control unit 400 have a selection function of supplying the resin material to the inside of the chamber 110 through the resin material supply pipe 112 or exhausting the resin material to the outside of the chamber 110 through the resin material bypass pipe 113. It constitutes a switching unit to have.

The vaporizer 300 makes it possible to supply the vaporized resin material to the chamber 110. As shown in FIGS. 2 and 3, the vaporizer 300 includes a vaporizer tank 130, a discharge unit 132, and a resin material raw material container 150.

As shown in FIGS. 2 and 3, the vaporization tank 130 includes an internal space 130a for vaporizing the liquid resin material, and a discharge portion 132 for spraying the liquid resin material is arranged above the internal space 130a. Has been done. The vaporization tank 130 is formed in a substantially cylindrical shape, but may have another cross-sectional shape. The inner surface of the vaporization tank 130 can be made of, for example, SUS, Al, or the like.

One end of the resin material liquid supply pipe 140 connected to the resin material raw material container 150 via a valve 140V and a carrier gas supply pipe 130G for supplying a carrier gas such as nitrogen gas are connected to the discharge unit 132. Has been done. The other end of the resin material liquid supply pipe 140 is connected to the resin material raw material container 150 and is located inside the liquid resin material stored in the resin material raw material container 150.

A pressurized gas supply pipe 150G for supplying a material liquid such as nitrogen gas is connected to the resin material raw material container 150, and the liquid resin material pressurized by increasing the internal pressure of the resin material raw material container 150 is a resin. The liquid can be sent to the material liquid supply pipe 140.

The discharge unit 132 is configured to spray the liquid resin material supplied from the resin material liquid supply pipe 140 into the internal space of the vaporization tank 130 together with the carrier gas. The discharge portion 132 is provided at a substantially central position on the top of the vaporization tank 130.

As shown in FIGS. 2 and 3, the vaporization tank 130 is provided with a heating unit 135 at a position below the vaporization tank 130. The heating unit 135 is arranged so as to divide the internal space into an upper space and a lower space. Below the heating unit 135, the space between the heating unit 135 and the storage bottom portion 136s is defined as the storage unit 136. The heating portion 135 can be regarded as a heating bottom portion, and the heating portion 135 (heating bottom portion) and the storage bottom portion 136s are configured so that the vaporization tank 130 has a double bottom structure. The vaporization tank 130 is provided with a vacuum gauge PG so that the internal pressure can be measured.
In the vaporization tank 130, the space between the heating unit 135 and the discharge unit 132 is defined as the vaporization space 130a above the heating unit 135.

The heating unit 135 is provided at a position below the discharge unit 132 in the vaporization space 130a, and heats and vaporizes the liquid resin material sprayed from the discharge unit 132.
The upper surface (one surface) of the heating portion 135 is a vaporization surface in contact with the liquid resin material sprayed from the discharge portion 132. On the upper surface of the heating portion 135, a top portion 135a having the highest height on the upper surface of the heating portion 135 is provided at a substantially central position of the upper surface thereof. An inclined surface 135b (one surface) that inclines downward from the top 135a toward the outer peripheral region is provided, and the upper surface of the heating portion 135 has a conical shape or a spherical shape.

The position of the top portion 135a is the central position of the heating portion 135, but it does not have to be this position, and corresponds to, for example, the center position directly below the discharge portion 132 or in the discharge direction (spray direction) of the discharge portion 132. The position is preferred. The inclination angle of the inclined surface 135b is not particularly limited as long as the resin material can flow down, but is preferably set in the range of 3 ° to 45 °.

The outer periphery of the peripheral edge of the heating portion 135 is fixed to the side wall 130h of the vaporization tank 130, and the outer peripheral region of the heating portion 135 is a storage portion from the vaporization space 130a where the discharge portion 132 is exposed. A plurality of through holes 135c communicating with 136 are provided.

A temperature control device for controlling the temperature of the surface in contact with the internal space is provided on the side wall 130h of the heating unit 135 and the vaporization tank 130. Specifically, the side wall 130h is provided with a heater 135d for heating the upper surface 135a of the heating portion 135 and a heater 130d for heating the side wall 130h in contact with the vaporization space 130a above the heating portion 135. ing.

The heater 135d is a sheathed heater embedded in the heating unit 135. Further, the heater 130d is a linear resistance heating device, which is wound around the outer circumference of the vaporization tank 130 and attached to heat the inside of the vaporization tank 130 to prevent adhesion reliquefaction and prevent adhesion reliquefaction in the vaporization tank 130. The material can be vaporized.

A heater 112d is also provided as a similar temperature adjusting device in the resin material supply pipe 112 (first pipe) connected to the vaporization space 130a. The heater 112d is wound around the resin material supply pipe 112 (first pipe) so that the vaporized resin material does not condense on the wall surface.
A heater is provided in the resin material detour pipe 113 as a similar temperature adjusting device.

These heaters 130d, 135d, 112d can prevent the resin material from liquefying by setting the temperature of the surface exposed to the vaporized resin material to be higher than the vaporization temperature of the resin material. At the same time, the temperature is set so as to reduce the heat solidification of the resin material as much as possible. The storage unit 136 is not heated, or the temperature of the storage unit 136 is set to be lower than the vaporization temperature of the resin material.

The storage unit 136 is arranged below the heating unit 135 in the internal space of the vaporization tank 130, and the liquid resin material that has not been vaporized in the heating unit 135 is flowed down from the through hole 135c and stored. A drain 136b having a valve 136V is provided in the storage bottom portion 136s of the storage unit 136 so that the stored resin material can be discharged to the outside. Further, the storage unit 136 is set to be equal to or lower than the vaporization temperature of the resin material, and specifically, it is preferably room temperature.

In this embodiment, an ultraviolet curable resin material may be used as the resin material. A part of the ultraviolet curable resin material may be polymerized or deteriorated by heating in the heating unit 135. The evaporation temperature of the resin changed in this way rises and does not evaporate in the heating unit 135. The non-evaporable resin flows through the inclined surface 135b of the heating portion 135 and accumulates in the storage bottom portion 136s.

When the resin material is vaporized in the vaporizer 300 according to the present embodiment, the heaters 130d and 135d are used to heat the heating portion 135 and the side wall 130h of the vaporization tank 130, and the heater 112d is used to heat the resin material. The supply pipe 112 (first pipe) is in a heated state.

At the same time, the control unit 400 closes the valve 112V to prevent gas from flowing into the chamber 110, and opens the valve 113V to allow gas to flow into the resin material bypass pipe 113.

In this state, the internal pressure of the resin material raw material container 150 is increased, and the liquid resin material supplied from the resin material liquid supply pipe 140 is sprayed from the discharge unit 132 together with the carrier gas into the internal space of the vaporization tank 130. At this time, the resin material and the carrier gas supplied to the discharge unit 132 can be further heated.

The resin material sprayed from the discharge unit 132 together with the carrier gas into the internal space of the vaporization tank 130 is vaporized inside the heated vaporization tank 130. At this time, the resin material that has reached the heating portion 135 is vaporized on the upper surface of the heating portion 135, but the resin material that is liquid without vaporization is formed by the inclination of the inclined surface 135b of the heating portion 135. It flows down toward the peripheral edge and drops onto the storage unit 136 without staying on the heating unit 135. As a result, it is possible to prevent the vaporized area in the heating unit 135 from being reduced by the liquid resin material, and it is possible to stabilize the vaporized amount.

At the same time, the liquid resin material flows down toward the peripheral edge of the heating unit 135 and drops onto the storage unit 136 without staying on the heating unit 135, so that the material is overheated on the heating unit 135 and does not solidify. Even if a part of the material is solidified, it is dropped onto the storage unit 136 together with the liquid resin material. As a result, it is possible to prevent the vaporized area of the heating portion 135 from being reduced by the solidified resin material, and it is possible to stabilize the vaporized amount.

While the resin material is constantly vaporized, the control unit 400 opens the valve 112V so that gas can flow into the chamber 110 and closes the valve 113V. Then, the resin material detour pipe 113 is in a state where gas cannot flow in. As a result, the vaporized resin material is supplied to the chamber 110, and the film forming process can be performed.
According to the vaporizer 300 in the present embodiment, the inclination of the inclined surface 135b of the heating portion 135 can prevent the vaporized area in the heating portion 135 from being reduced by the liquid resin material, and the supply amount of the vaporized resin material. Can be stabilized.

Further, by driving the switching unit, that is, by simply switching the open / closed state of the valve 112V and the valve 113V by the control unit 400, the resin material is supplied to the chamber 110 and the resin material is supplied to the resin material bypass pipe 113 (second pipe). You can choose between supply and. Therefore, since the supply amount of the vaporized resin material supplied to the chamber 110 can be stabilized, it is possible to prevent the film formation rate from fluctuating and stably form a resin material film having excellent film characteristics. It becomes. Further, when the substrate S is replaced and the mask is aligned in the chamber 110, the resin material can be continuously vaporized without introducing the resin material into the chamber 110, so that the vapor generation of the vaporized resin material can be stopped / started. The steam generation rate can be made almost constant without repeating.

In the resin film forming section 100, for example, the film formation of the ultraviolet curable acrylic resin material having a vaporization temperature of about 40 to 250 ° C. and the ultraviolet irradiation for curing the formed resin material are performed in the same chamber 110. It is configured to be possible with. As a result, all the processing steps can be performed with the same device configuration, and the productivity can be improved.

Hereinafter, the element structure 10 manufactured by the device structure manufacturing apparatus 1000 according to the present embodiment will be described.
FIG. 4 is a schematic cross-sectional view showing an element structure according to the present embodiment. FIG. 5 is a plan view showing the element structure of FIG. FIG. 6 is an enlarged view showing a main part of the element structure. In each figure, the X-axis, Y-axis, and Z-axis directions indicate three axes that are orthogonal to each other. In this embodiment, the X-axis and Y-axis directions are horizontal directions that are orthogonal to each other, and the Z-axis direction is a vertical direction. Shown.

The element structure 10 according to the present embodiment is silicon nitride having a substrate 2 including a device layer 3 (functional layer) and a functional layer 3 formed on the surface 2a of the substrate 2 and having a local convex portion. A second inorganic material similar to the first layer 41 so as to cover the first inorganic material layer 41 (first layer) made of an inorganic material such as an object (SiN _x ) and the first inorganic material layer 41. It includes a layer 42 (second layer). In the present embodiment, the element structure 10 is composed of a light emitting element having an organic EL light emitting layer.

The substrate 2 has a front surface 2a (first surface) and a back surface 2c (second surface), and is composed of, for example, a glass substrate, a plastic substrate, or the like. The shape of the substrate 2 is not particularly limited, and is formed in a rectangular shape in the present embodiment. The size, thickness, and the like of the substrate 2 are not particularly limited, and a substrate having an appropriate size and thickness is used according to the size of the element. In the present embodiment, a plurality of element structures 10 are produced from an aggregate of the same elements produced on one large substrate S.

The device layer 3 (functional layer) is composed of an organic EL light emitting layer including an upper electrode and a lower electrode. In addition to this, the device layer 3 may be composed of various functional elements including a material having a property of being easily deteriorated by moisture, oxygen, etc., such as a liquid crystal layer in a liquid crystal element and a power generation layer in a power generation element.

The device layer 3 is formed on a predetermined region of the surface 2a of the substrate 2. The planar shape of the device layer 3 is not particularly limited, and is formed in a substantially rectangular shape in the present embodiment. However, in addition to such a shape, a shape such as a circular shape or a linear shape may be adopted. The device layer 3 is not limited to the example of being arranged on the front surface 2a of the substrate 2, and may be arranged on at least one of the front surface 2a and the back surface 2c of the substrate 2.

The first inorganic material layer 41 (first layer) is provided on the surface 2a of the substrate 2 on which the device layer 3 is arranged, and constitutes a convex portion that covers the surface 3a and the side surface 3s of the device layer 3. The first inorganic material layer 41 has a three-dimensional structure protruding upward in FIG. 6 from the surface 2a of the substrate 2.

The first inorganic material layer 41 is composed of an inorganic material capable of protecting the device layer 3 from moisture and oxygen. In the present embodiment, the first inorganic material layer 41 is composed of silicon nitride (SiN _x ) having excellent water vapor barrier properties, but is not limited to this material. The first inorganic material layer 41 may be formed of another silicon compound such as a silicon oxide or a silicon oxynitride, or another inorganic material having a water vapor barrier property such as aluminum oxide.

The first inorganic material layer 41 is formed on the surface 2a of the substrate 2 using, for example, an appropriate mask. In the present embodiment, the first inorganic material layer 41 is formed by using a mask having a rectangular opening large enough to accommodate the device layer 3. The film forming method is not particularly limited, and a CVD (Chemical Vapor Deposition) method, a sputtering method, an ALD (Atomic Layer Deposition) method, or the like can be applied. The thickness of the first inorganic material layer 41 is not particularly limited, and is, for example, 200 nm to 2 μm.

The second inorganic material layer 42 (second layer) is composed of an inorganic material capable of protecting the device layer 3 from moisture and oxygen, similarly to the first inorganic material layer 41, and is composed of the first inorganic material. It is provided on the surface 2a of the substrate 2 so as to cover the surface 41a and the side surface 41s of the layer 41. In the present embodiment, the second inorganic material layer 42 is composed of silicon nitride (SiN _x ) having excellent water vapor barrier properties, but is not limited to this material. The second inorganic material layer 42 may be formed of another silicon compound such as a silicon oxide or a silicon oxynitride, or another inorganic material having a water vapor barrier property such as aluminum oxide.

The second inorganic material layer 42 is formed on the surface 2a of the substrate 2 using, for example, an appropriate mask. In the present embodiment, the second inorganic material layer 42 is formed by using a mask having a rectangular opening large enough to accommodate the first inorganic material layer 41. The film forming method is not particularly limited, and a CVD (Chemical Vapor Deposition) method, a sputtering method, an ALD (Atomic Layer Deposition) method, or the like can be applied. The thickness of the second inorganic material layer 42 is not particularly limited, and is, for example, 200 nm to 2 μm.

The element structure 10 according to the present embodiment further includes a first resin material 51. The first resin material 51 is unevenly distributed around the first inorganic material layer 41 (convex portion). In the present embodiment, the first resin material 51 is interposed between the first inorganic material layer 41 and the second inorganic material layer 42, and the side surface 41s of the first inorganic material layer 41 and the surface 2a of the substrate 2 are interposed. It is unevenly distributed at the boundary portion 2b with and. The first resin material 51 has a function of filling the gap G (FIG. 6) between the first inorganic material layer 41 formed near the boundary portion 2b and the substrate surface 2a.

In FIG. 6, the peripheral structure of the boundary portion 2b in the element structure 10 is enlarged and shown. Since the first inorganic material layer 41 is formed of a CVD film or a sputtering film of an inorganic material, the coverage characteristic (step coverage) of the substrate 2 including the device layer 3 with respect to the uneven structure surface is relatively low. As a result, as shown in FIG. 6, the first inorganic material layer 41 that covers the side surface 3s of the device layer 3 has a reduced coverage characteristic near the substrate surface 2a, and the coating film thickness is extremely small or is coated. There is a risk that the film will not exist.

Therefore, in the present embodiment, by unevenly distributing the first resin material 51 in the poorly coated region around the first inorganic material layer 41 as described above, moisture and oxygen from the poorly coated region to the inside of the device layer 3 I try to suppress the invasion of. Further, at the time of forming the second inorganic material layer 42, the first resin material 51 functions as the base layer of the second inorganic material layer 42, so that the second inorganic material layer 42 can be properly formed. This makes it possible to appropriately coat the side surface 41s of the first inorganic material layer 41 with a desired film thickness.

In the first method of forming the resin material 51, the resin material vaporized by spray vaporization is supplied to the substrate surface 2a and condensed to form a resin material film, and after the resin material film is cured, unnecessary portions are removed. It is formed by the process of vaporization.

Hereinafter, a method of manufacturing the element structure by the device for manufacturing the element structure according to the present embodiment will be described.
7 to 11 are process diagrams schematically showing a method of forming the first resin material 51 in the method for manufacturing an element structure according to the present embodiment.

(Example of device layer forming process)
First, in the device structure manufacturing apparatus 1000 shown in FIG. 1, the substrate S carried into the core chamber 200 from the load lock chamber 210 is conveyed from the core chamber 200 to the functional layer forming portion 204 by a substrate transfer robot (not shown). .. The device layer 3 (functional layer) is formed in a predetermined region on the substrate S in the functional layer forming portion 204.
In the present embodiment, the region serving as the functional layer 3 includes a plurality of regions on the substrate S, for example, four regions arranged at predetermined intervals of two in each of the X-axis direction and the Y-axis direction, or a single region. The region that becomes the functional layer 3 of the above is used.

The method for forming the device layer 3 is not particularly limited, and can be appropriately selected depending on the material, composition, and the like of the device layer 3. For example, the substrate S is transported to a film forming chamber or the like of the functional layer forming portion 204, a predetermined material is vapor-deposited, sputtered, or the like on the substrate S, and further pattern processing is performed on the predetermined region on the substrate S. The desired device layer 3 can be formed on the surface. The method of pattern processing is not particularly limited, and for example, etching or the like can be adopted.

A detailed description of the specific configuration of the device structure manufacturing apparatus 1000 is omitted in FIG. It is possible to adopt a configuration in which the functional layer forming portion 204 is composed of a large number of processing chambers and has a conveying device capable of conveying the substrate S between the processing chambers adjacent to each other. Alternatively, a configuration other than a vacuum device can be adopted. That is, it is not necessary to go through the load lock chamber 210, and it is possible to process the substrate S outside the device 1000 for manufacturing the element structure.

(Example of first layer forming process)
Next, the substrate S on which the device layer 3 is formed is carried out from the functional layer forming unit 204 by a substrate transfer robot (not shown), and is carried into the first layer forming unit 201 via the core chamber 200.

In the first layer forming portion 201, the first inorganic material layer 41 (first layer) is formed in a predetermined region on the substrate S including the region of the device layer 3 so as to cover the device layer 3. As a result, the first inorganic material layer 41 that covers the device layer 3 is formed so as to have a convex portion on the substrate S as shown in FIG. 7.
In this step, for example, using a mask having a number of openings corresponding to the region of the first inorganic material layer 41, for example, the first inorganic material layer 41 made of silicon nitride is formed as a part of the protective layer. You may.

Here, the first layer forming unit 201 may have a CVD processing device or a sputtering processing device. Further, although not shown, in the film forming chamber of the first layer forming portion 201, a stage for arranging the substrate S, a mask arranged on the substrate S, and a mask are supported, and the substrate S on the stage S is supported. A mask alignment device for aligning the mask, a film forming material supply device, and the like are installed.

The substrate S on which the device layer 3 is formed is arranged on the stage of the first layer forming portion 201 by a substrate transfer robot or the like arranged in the core chamber 200. The mask is arranged at a predetermined position on the substrate S by a mask alignment device or the like so that the device layer 3 is exposed through the opening of the mask.
Then, for example, by the CVD method, the first inorganic material layer 41 made of silicon nitride or the like is formed so as to cover the device layer 3. The method for forming the first inorganic material layer 41 is not limited to the CVD method, and for example, a sputtering method can also be adopted. In this case, the first layer forming portion 201 is configured to have a sputtering apparatus.

(Example of resin material forming process-deposition process)
Next, the substrate S on which the first inorganic material layer 41 having the convex portion is formed is carried out from the first layer forming portion 201 by a substrate transfer robot (not shown), and is carried out from the first layer forming portion 201, and the resin film forming portion 100 is passed through the core chamber 200. Will be delivered to.

The resin film-forming unit 100 performs a step of forming a resin material film on the substrate S on which the first inorganic material layer 41 is formed, and a step of curing the resin material film to form a resin film. In this step, first, the resin film-forming unit 100 is used to form, for example, a resin material film made of a UV-curable acrylic resin material.

In the resin film forming section 100, first, the substrate S carried into the resin film forming section 100 is placed on the stage 102. Before the substrate S is carried into the chamber 110, the gas in the chamber 110 is exhausted by the vacuum exhaust device, and the inside of the chamber 110 is maintained in a vacuum state. Further, when the substrate S is carried into the chamber 110, the vacuum state of the chamber 110 is maintained.

At this time, the chamber 110 is set by the heating device so that at least the temperature on the inner surface side of the upper space 107 and the lower space 108 is equal to or higher than the vaporization temperature of the resin material. At the same time, the substrate S arranged on the stage 102 is cooled together with the stage 102 by the substrate cooling device 102a to a temperature lower than the vaporization temperature of the resin material.
Further, the heater 112d is used to heat the resin material supply pipe 112 (first pipe) to a temperature equal to or higher than the vaporization temperature of the resin material.

Next, a mask (not shown) may be placed at a predetermined position on the board S by a mask mounting device or the like on the board S placed on the stage 102.

Before the substrate S is placed on the stage 102, the resin material is steadily and stably vaporized in the vaporizer 300. During this vaporization stabilization process, the control unit 400 closes the valve 112V to prevent gas from flowing into the chamber 110, and opens the valve 113V so that gas can flow into the resin material bypass pipe 113. Maintain the state of doing.
The vaporization of the resin material in the vaporizer 300 is preferably maintained for a required time before the film forming treatment, depending on the stability of the amount of the vaporized resin material supplied.

Next, after the conditions such as the mask alignment state, the atmosphere in the chamber 110, the temperature of the inner wall of the chamber 110, the temperature of the resin material supply pipe 112, and the temperature of the substrate S are set to predetermined conditions, the control unit 400 controls the valve 112V. And the valve 113V are switched between open and closed states. As a result, the valve 112V is opened to allow gas to flow into the resin material supply pipe 112, and the valve 113V is closed to prevent gas from flowing into the resin material bypass pipe 113. As a result, the vaporized resin material is supplied to the chamber 110.

The vaporized resin material supplied from the vaporizer 300 is supplied from the upper space 107 to the lower space 108 via the shower plate 105 through the inside of the resin material supply pipe 112.
In the lower space 108, the vaporized resin material supplied substantially evenly to the entire surface of the substrate S by the shower plate 105 condenses on the substrate surface 2a to form a liquid resin material film 5a, as shown in FIG. In the liquid resin material film 5a condensed on the substrate surface 2a, the film thickness of the resin material film 5a becomes thicker due to surface tension at the corners, recesses, gaps, etc. having inferior angles on the substrate surface 2a.

At this time, the liquid film 5a may be formed only in a region close to the convex portion 41 (near position) by a mask (not shown). It is preferable to control the supply amount of the resin material supplied from the vaporizer 300 in consideration of the liquefaction of the resin material and the film formation rate. The resin material liquefied on the surface of the substrate S enters fine gaps due to the capillary phenomenon or further aggregates due to the surface tension of the resin material, so that the resin material film 5a is formed while smoothing the fine irregularities on the substrate S. It becomes possible to do. As a result, the film thickness of the resin material film 5a becomes thicker at the corners, recesses, gaps, and the like having inferior angles on the surface of the substrate S. In particular, the fine gap at the boundary 2b between the side surface 41s of the first inorganic material layer 41 and the surface 2a of the substrate 2 can be filled with the resin material film 5a.

Further, since the chamber 110 is heated, the vaporized resin material does not condense on the surface such as the inner wall of the chamber 110.

After a predetermined processing time has elapsed, a liquid film 5a having a predetermined thickness is formed on the surface of the substrate S, and then the valve 112V is closed by the control unit 400 to prevent gas from flowing into the chamber 110. The valve 113V is opened so that gas can flow into the resin material bypass pipe 113.
Since the chamber 110 is continuously exhausted, the vaporized resin material is discharged to the outside of the chamber 110, and the film formation is stopped.

In this state, the surface of the substrate S is irradiated with ultraviolet rays from the UV irradiation device 122 while maintaining the vacuum atmosphere in the chamber 110. The irradiated ultraviolet rays pass through the top plate 120 and the shower plate 105 made of an ultraviolet ray transmitting material such as quartz and reach the substrate S in the chamber 110.

A part of the ultraviolet rays emitted toward the substrate S in the chamber 110 is incident on the surface of the substrate S, and a photopolymerization reaction occurs in the resin material film 5a made of the resin material formed on the surface of the substrate S. The liquid film 5a is cured. As shown in FIG. 9, the resin film 5 is formed on the surface of the substrate S. In this embodiment, a thin film of acrylic resin is formed.
Next, a mask (not shown) is moved from the film formation position on the substrate S to the retracted position by a mask mounting device or the like.

(Example of resin material forming process-localization process)
Next, the substrate S on which the resin film 5 is formed is carried out from the resin film forming unit 100 by a substrate transfer robot (not shown), and is carried into the localization processing unit 202 via the core chamber 200.

Here, the localization processing unit 202 can be configured to include a dry etching processing apparatus, particularly a plasma etching processing apparatus.
Further, although not shown, the localization processing unit 202 may be a parallel plate type plasma processing device. In this case, in the localization processing unit 202, the substrate S is placed on the electrode, the etching gas is introduced into the chamber, and the high frequency generated by the high frequency power source is irradiated into the chamber through the antenna to generate plasma. Is generated, and a bias voltage is applied to the electrodes on which the substrate S is mounted from a high-frequency power source. Ions existing in the plasma are drawn into the substrate placed on the electrodes, and the resin film 5 formed on the surface of the substrate S is etched and removed.

Here, as shown in FIG. 10, the resin film 5 is etched by the ions in the plasma generated from the etching gas. At this time, a bias voltage may be applied to the electrode in order to draw the ions toward the substrate S on the electrode.
The resin film 5 in the flat portion having a thin film thickness is removed by etching, and the resin film 5 in the portion thicker than the flat portion remains in the corners, recesses, gaps, etc. having inferior angles on the surface of the substrate S. This remaining portion becomes the first resin material 51.

When the first layer forming portion 201 and the second layer forming portion 203 have a sputtering apparatus or a plasma CVD apparatus, the forming portions 201 and 203 not only have a film forming function but also have a localization process. It can also have the functions of the unit 202. In this case, for example, the same processing apparatus can be used as the first layer forming unit 201, the second layer forming unit 203, and the localization processing unit 202.

In the localization processing unit 202, as shown in FIG. 10, in the substrate S on which the resin film 5 is formed, most of the resin film 5 is removed by plasma etching as shown in FIG. This plasma treatment can be performed for a predetermined treatment time by calculating the treatment time from the etching rate.

Further, the localization processing unit 202 may be provided with a detection device. This detection device measures the bias voltage applied to the electrodes, determines that most of the resin film 5 on the substrate S has been removed due to the change in the measured value, and uses the determination result (detection result) as the end point of the etching process. ..

As shown in FIG. 11, the first resin material 51 remaining on the substrate S by this dry etching process is localized at the boundary 2b between the side surface 41s of the first inorganic material layer 41 and the surface 2a of the substrate 2. (Exists locally). Further, the first resin material 51 is unevenly distributed in a portion where fine irregularities on the surface of the first inorganic material layer 41 can be smoothed.

(Example of process for forming the second layer)
The substrate S formed by locally forming the first resin material 51 is carried out from the localization processing unit 202 by a substrate transfer robot (not shown), and is carried into the second layer forming unit 203 via the core chamber 200. To.

In the second layer forming portion 203, the second inorganic material layer is formed in a predetermined region on the substrate S including the convex portion so as to cover the first inorganic material layer 41 on which the first resin material 51 is formed. Form 42 (second layer).

In this step, similarly to the first inorganic material layer 41, a mask having a number of openings corresponding to the region of the second inorganic material layer 42 is used to make the same material as the first inorganic material layer 41. For example, a second inorganic material layer 42 (second layer) made of silicon nitride is formed. As a result, the device layer 3 (functional layer) is covered with the first inorganic material layer 41 (first layer), the first resin material 51, and the second inorganic material layer 42 (second layer), and the device layer is formed. It can function as a protective layer that protects 3.

Here, the second layer forming unit 203 can be configured to have a CVD processing device or a sputtering processing device.
The second layer forming portion 203 can have the same device configuration as the first layer forming portion 201 described above. For example, the same processing apparatus can be used as the first layer forming portion 201 and the second layer forming portion 203, or the second layer forming portion 203 can have the functions of the first layer forming portion 201. ..
Further, when the second layer forming unit 203 is a plasma CVD processing apparatus, it can also have the function of the localization processing unit 202. If the first resin material 51 is localized in the second layer forming portion 203, the second inorganic material layer 42 (second layer) can be formed as it is after the localization.

After that, the substrate S on which the second inorganic material layer 42 is formed is carried out from the second layer forming portion 203 by a substrate transfer robot (not shown), and of the element structure via the core chamber 200 and the load lock chamber 210. It is carried out to the outside of the manufacturing apparatus 1000.

In the device structure manufacturing apparatus 1000 according to the present embodiment, the resin film forming section 100 forms the resin film 5, and the localization processing section 202 provides the first resin material 51 localized by the plasma etching process. Form. After that, by forming the second inorganic material layer 42 (second layer), the second inorganic material layer 42 (second layer) is located at a place where barrier properties as a protective layer are required, such as the boundary portion 2b. Can be reliably formed. Moreover, since the vaporizer 300 can stabilize the supply amount of the resin material, the time required for the film forming process of the resin material film is shortened, the film forming rate is stabilized, and the film characteristics are prevented from fluctuating. Is possible.

Hereinafter, other examples of the element structure manufactured by the device structure manufacturing apparatus 1000 according to the present embodiment will be described.

In the device structure 10 of this example manufactured by the device structure manufacturing apparatus 1000 according to the present embodiment, the resin material is unevenly distributed at the boundary portion 2b around the first inorganic material layer 41 (convex portion). The resin is not limited to the structure, and the resin may remain on the surface 2a of the substrate 2 other than the boundary portion 2b, the surface 41a of the first inorganic material layer 41, and the like.

In this case, the second inorganic material layer 42 (second layer) has a region laminated on the first inorganic material layer 41 via the second resin material 52 as shown in FIG. become. The second resin material 52 is interposed between the first inorganic material layer 41 and the second inorganic material layer 42, and is independent of the first resin material 51 on the surface of the first inorganic material layer 41. It is unevenly distributed in 41a.

As described above, according to the device structure 10 according to the present embodiment, the side surface of the device layer 3 is covered with the first inorganic material layer 41 (first layer) and the second inorganic material layer 42 (second layer). Therefore, it is possible to prevent the invasion of water and oxygen into the device layer 3.

Further, according to the present embodiment, since the first resin material 51 is unevenly distributed at the boundary portion 2b, the barrier characteristics deteriorate due to poor coverage of the first inorganic material layer 41 or the second inorganic material layer 42. Can be prevented, and stable element characteristics can be maintained for a long period of time.

Hereinafter, other examples of the element structure manufactured by the device structure manufacturing apparatus 1000 according to the present embodiment will be described.

As shown in FIG. 13, the element structure 20 according to this example further has a second resin material 52 interposed between the first inorganic material layer 41 and the second inorganic material layer 42. The second resin material 52 is unevenly distributed on the surface of the first inorganic material layer 41 independently of the first resin material 51.

In the element structure 20 according to this example, the surface of the first inorganic material layer 41 is not always flat, and particles are formed, for example, before film formation (during substrate transfer or before charging into a film forming apparatus) or during film formation. The case where unevenness is formed by mixing P in the film is illustrated. If particles are mixed into the first inorganic material layer 41, the coverage characteristics of the first inorganic material layer 41 with respect to the device layer 3 may be deteriorated, and the desired barrier characteristics may not be obtained.

Therefore, the element structure 20 according to this example has a structure in which the poorly coated portion of the first inorganic material layer 41 generated by the mixing of particles P or the like is filled with the second resin material 52. Typically, the second resin material 52 is unevenly distributed on the boundary portion 32b between the surface of the first inorganic material layer 41 and the peripheral surface of the particles P due to surface tension. As a result, the coverage of the device layer 3 is improved, and the second resin material 52 functions as a base, so that an appropriate film formation of the second inorganic material layer 42 becomes possible. A thin resin film may be formed on the flat portion at the time of film formation. A resin film thicker than the flat portion is formed around the particles P due to surface tension.

The second resin material 52 is formed in the same manner as the first resin material 51. The second resin material 52 may be composed of the same organic substance as the first resin material 51. In this case, the first resin material 51 and the second resin material 52 can be formed at the same time in the same step.

Here, in the localization processing unit 202, the thin portion is removed by etching and the thick portion remains, that is, the resin film 5 is removed except for the portion where the particles P are present, and the first inorganic material layer 41 is removed. The etching of the resin film 5 is stopped when the resin film 5 is exposed. As a result, when the convex portion is viewed from above in the vertical direction, the resin film 5 of the boundary portion 32b hidden by the particles P is not overetched, and the resin film 5 is surely attached to the boundary portion 32b around the particles P. Remains in. As a result, the second resin material 52 exhibits a gentle surface shape at the boundary portion 32b in the vicinity of the particles P. If the particles P are not present at all, when the resin film 5 is substantially removed by anisotropic etching, the resin film 5 is completely removed and the first inorganic material layer 41 is exposed.
The etching stop can be executed based on the result of plasma emission spectrum analysis and the elapsed time of anisotropic etching.
At this time, the resin film 5 is not removed at the boundary portion 2b, and the resin film 5 is localized to form the first resin material 51. Similarly, the resin film 5 is not removed at the boundary portion 32b, and the resin film 5 is localized to form the second resin material 52.

Also in this example, it is possible to obtain the same effect as the production of the above-mentioned element structure 10. Further, according to this example, since the deterioration of the film quality due to the mixing of the particles P can be compensated for by the second resin material 52, the productivity can be improved while ensuring the desired barrier characteristics.

Hereinafter, other examples of the element structure manufactured by the device structure manufacturing apparatus 1000 according to the present embodiment will be described.

As shown in FIG. 14, the element structure 30 according to this example includes, for example, a substrate 21 having a device layer 3 (functional layer), a convex portion 40 covering the side surface 3s of the device layer 3, a convex portion 40, and the convex portion 40. It has a first inorganic material layer 41 (first layer) and a second inorganic material layer 42 (second layer) formed on the surface of the substrate 21 so as to cover the device layer 3.

The convex portion 40 is formed on the surface 21a of the substrate 21 and has a concave portion 40a in the central portion for accommodating the device layer 3. In this example, the bottom surface of the recess 40a is formed at a position higher than the surface 21a of the substrate 21, but it may be formed at the same height as the surface 21a or at a position lower than the surface 21a. You may.

The element structure 30 according to this example further has a resin material 53 interposed between the first inorganic material layer 41 and the second inorganic material layer 42. The resin material 53 is unevenly distributed on the boundary portion 21b between the outer surface of the convex portion 40 and the surface 21a of the substrate 21, and the boundary portion 22b between the inner side surface of the convex portion 40 and the device layer 3. As a result, it is possible to suppress poor coating of the first inorganic material layer 41 and the second inorganic material layer 42 on the surface 3a of the convex portion 40 and the device layer 3, and it is possible to improve the barrier characteristics. The resin material 53 can be formed in the same manner as the first resin material 51 and the second resin material 52 described above.

In the substrate S having such irregularities, the portion that cannot be covered by the inorganic material layer is further flattened by the unevenly distributed resin material. The inorganic material layer to be formed on the resin material can be formed more uniformly and with good coverage. Further, the resin material has a lower seal against water than the inorganic material layer, but the unevenly distributed resin material is covered with the inorganic material layer and is not exposed to the outside atmosphere, so that the sealing property is improved. That is, it is preferable that the resin material is not in the form of a film and is unevenly distributed so as not to be exposed to the outside atmosphere.
Although preferred embodiments of the present invention have been described above and described above, it should be understood that these are exemplary of the invention and should not be considered as limiting. Additions, omissions, substitutions, and other modifications can be made without departing from the scope of the invention. Therefore, the present invention should not be considered as limited by the above description, but is limited by the claims.

For example, in the above embodiment, the second inorganic material layer 42 (second layer) covering the first inorganic material layer 41 (first layer) is composed of a single layer, but the second inorganic material layer. 42 (second layer) may be composed of a multilayer film. In this case, the resin material may be supplied onto the substrate for each step of forming each layer to form the resin material unevenly distributed on the uneven portion of the substrate, whereby the barrier property can be further improved.

Further, in the above embodiment, after the formation of the first inorganic material layer 41 (first layer), the first resin material 51 is localized around the first inorganic material layer 41 which is a convex portion. However, before the formation of the first inorganic material layer 41 by the first layer forming section 201, the resin film forming section 100 and the localization processing section 202 unevenly distribute the first resin material 51 around the device layer 3. You may. As a result, the coating efficiency of the device layer 3 by the first inorganic material layer 41 can be increased.

Examples of utilization of the present invention include sealing of electronic devices that dislike moisture, such as organic EL devices and thin-film Li batteries.

S, 2, 21 ... Substrate 2b, 21b, 22b, 32b ... Boundary 3 ... Device layer (functional layer)
10, 20, 30 ... Element structure 40 ... Convex portion 41 ... First inorganic material layer (first layer)
42 ... Second inorganic material layer (second layer)
51, 53 ... First resin material (resin material)
52 ... Second resin material (resin material)
53 ... Resin material 100 ... Resin film forming part (deposition chamber)
102 ... Stage 105 ... Shower plate 102a ... Substrate cooling device 112 ... Resin material supply pipe (first pipe)
112V ... Valve 113 ... Resin material detour pipe (second pipe)
113V ... Valve 122 ... UV irradiation device 130 ... Vaporization tank 130a ... Internal space 130d ... Heater 132 ... Discharge part 135 ... Heating part 135a ... Top 135b ... Inclined surface 135c ... Through hole 135d ... Heater 136 ... Storage part 140 ... Resin material Liquid supply pipe 150 ... Resin material raw material container 200 ... Core chamber 201 ... First layer forming portion (deposition chamber)
202 ... Localization processing unit 203 ... Second layer forming unit (deposition chamber)
204 ... Functional layer forming part (deposition chamber)
210 ... Load lock chamber 300 ... Vaporizer 400 ... Control unit 1000 ... Device for manufacturing element structure

Claims (8)

A vaporizer for supplying a vaporized resin material to a device for manufacturing an element structure.
A vaporization tank with an internal space for vaporizing a liquid resin material,
In the internal space, a discharge unit that sprays the liquid resin material and
In the internal space, a heating portion that is arranged to face the discharge portion and heats and vaporizes the sprayed liquid resin material, and a heating portion.
In the internal space, a storage portion that is arranged below the heating portion and in which the liquid resin material that has not been vaporized in the heating portion is dropped and stored.
With
The heating portion is provided with a top portion in the central region of one surface in contact with the liquid resin material sprayed from the discharge portion when viewed from the discharge portion.
The one surface is inclined downward so that the resin material can flow down from the top to the outer peripheral region.
The top corresponds to the center position of the discharge portion in the discharge direction.
Vaporizer. The vaporization tank has a double bottom structure with a storage bottom portion and a heating portion.
The vaporizer according to claim 1. A through hole communicating from the discharge portion to the storage portion is arranged in the outer peripheral region of the heating portion.
The vaporizer according to claim 1 or 2. The temperature of the storage unit is lower than that of the heating unit.
The vaporizer according to any one of claims 1 to 3. The vaporization tank includes a temperature control device that controls the temperature of the wall surface in contact with the internal space thereof.
The vaporizer according to any one of claims 1 to 4. A first pipe for introducing the resin material vaporized from the vaporization tank toward a film forming chamber constituting the manufacturing apparatus for the element structure, and
A second pipe for leading the resin material vaporized from the vaporization tank to a portion different from the film forming chamber, and
A switching unit arranged between the vaporization tank and the film forming chamber and capable of selecting the first pipe and the second pipe,
To prepare
The vaporizer according to any one of claims 1 to 5. A first layer forming portion that covers the functional layer arranged on one surface side of the substrate and has a local convex portion and forms a first layer made of an inorganic material.
The resin material vaporized from the vaporizer according to any one of claims 1 to 6 can be supplied, and a resin material film made of the resin material is formed on the first layer to form the resin material. A resin film-forming part that cures the film to form a resin film,
When the first layer is viewed from the side cross section, a part of the resin film at a position including a boundary portion between the outer surface of the convex portion and one surface of the substrate is left, and the resin film at another position is formed. Localization processing unit to be removed and
A second layer made of an inorganic material is formed so as to cover the convex portion on one surface side, the resin material in which a part of the resin film remains, and the first layer exposed by the removal. The second layer forming part and
Have,
Equipment for manufacturing element structures. The localization treatment unit removes the resin film by using a dry etching method so that a region including the top portion of the outer surface of the convex portion is exposed.
The apparatus for manufacturing an element structure according to claim 7 .

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