JP2002173778A - Vaporizer - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a vaporizer which is used for supplying a gaseous CVD (chemical vapor deposition) material into a CVD system for use in semiconductor fabrication, etc., and by which high-quality vapor gas can be obtained by efficiently performing vaporization at desired concentration and flow rate even in the case where a solid CVD material is used. SOLUTION: In the vaporizer, a constituent material of a vaporization chamber is stainless steel or nickel steel and at least a part of the surface on the vaporization-chamber side is surface-roughened by a blasting method.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical vapor deposition (CVD) apparatus used for manufacturing semiconductors and the like.
It relates to a vaporizer for supplying the D raw material. More specifically, a vaporizer for efficiently vaporizing and supplying a liquid CVD raw material or a liquid CVD raw material or a liquid CVD raw material obtained by dissolving a liquid CVD raw material in a solvent at a desired concentration and flow rate without lowering the quality. About.

[0002]

2. Description of the Related Art In an insulating thin film of a semiconductor device,
SiO ₂ as a gate insulating film, Si ₃ N ₄ as a capacitor insulating film, PSG (phosphorus-silicon as the interlayer insulating film
Glass) and BPSG (boron phosphorus silicon glass). Conventionally, materials for producing these by a CVD apparatus include SiH ₄ , NH ₃ , PH ₃ and B ₂ H
_Although gaseous materials such as ₆ have been used, the demand for flattening the insulating film has been increasing with the progress of three-dimensional devices and multilayer wiring, and defects such as voids are unlikely to occur and high quality Liquid materials capable of forming a thin film are also used. For example, tetraethoxy silicon (Si (OC ₂ H ₅ ) ₄ ) is used as a raw material for the SiO ₂ film, and trimethoxy boron (B (OCH ₃ ) ₃ ) and trimethoxy phosphorus (P (OCH ₃ ) are used as the raw materials for the BPSG film. ₃ ) etc. are used.

In addition, a new type of thin film such as a Ta ₂ O ₅ film having a dielectric constant several times higher than that of SiO ₂ has been developed. However, as a raw material of the Ta ₂ O ₅ film, a liquid is used. Certain pentaethoxy tantalum (Ta (OC ₂ H ₅ ) ₅ ) is used. More recently, lead zirconate titanate (PZT) films having higher dielectric constant and high step coverage have been used as oxide-based dielectric thin films for semiconductor memories.
A barium strontium titanate (BST) film or the like is used. Raw materials for these thin films include, for example, Pb
Pb (DPM) ₂ (solid raw material) as a source, Zr (OC (CH ₃ ) ₃ ) ₄ (liquid raw material) as a Zr source, Ti (OCH (CH ₃ ) ₂ ) ₄ (liquid raw material) as a Ti source, Ba source As Ba (DPM) ₂ (solid raw material) and Sr as Sr source
(DPM) ₂ (solid raw material).

When a liquid raw material is used as a CVD raw material, the liquid raw material is gasified by a vaporizer or the like and then supplied to a CVD apparatus. However, liquid raw materials generally have a low vapor pressure, a high viscosity, and a vaporization temperature and decomposition temperature are close to each other. Therefore, the liquid raw material must be efficiently vaporized at a desired concentration and flow rate without lowering its quality. Was difficult. In addition, a solid raw material can be obtained at a high temperature by sublimating it and sublimating it to provide a high-purity raw material, but it is extremely difficult to secure a sufficient supply industrially, Usually, it is used by being dissolved in a solvent such as tetrahydrofuran to be vaporized by forming a liquid raw material. However, since the solid raw material has a significantly different vaporization temperature from that of the solvent, only the solvent is easily vaporized by heating, which is more difficult than the vaporization of the liquid raw material.

[0005] As described above, the production of an insulating thin film using a liquid raw material or a solid raw material requires a high level of technology. Various vaporizers have been developed for the purpose of efficiently vaporizing the raw material without deteriorating. For example, as a vaporizer for vaporizing a liquid raw material, the shape of the vaporization container may be spherical, elliptical, barrel, or rounded at the end, cylindrical, conical, frustoconical, hemispherical, or these. Or a combination of these, and includes a vaporizer (Japanese Patent Laid-Open No. 11-342328) in which the carrier gas is set to form a swirling flow in the vaporization vessel.

[0006]

In the vaporizer, the heated carrier gas is swirled along the inner wall surface of the vaporization vessel, so that the raw material atomized by the atomizer or the like at the raw material supply port is supplied to the carrier. Since it is entrained in the gas and heated by contact, the quality of the raw material deteriorates due to direct heating from the inner wall surface and the accumulation of deposits on the inner wall surface is extremely reduced.
It is an excellent vaporizer that can be expected to improve vaporization efficiency.
However, when a CVD raw material obtained by dissolving a solid CVD raw material in an organic solvent is used, even if such a vaporizer is used, only the solvent is easily vaporized, which may adversely affect the quality and purity of the insulating thin film. there were.

[0007] In addition, CVD raw materials are generally expensive. In chemical vapor deposition, it is preferable to increase the utilization efficiency by supplying the CVD raw material at a high concentration. When the supply amount of the carrier gas is reduced, there is an inconvenience that only the solvent tends to vaporize. Therefore, the problem to be solved by the present invention is to provide a vaporizer capable of obtaining a high-quality vaporized gas by vaporizing efficiently at a desired concentration and flow rate even when a solid CVD raw material is used. .

[0008]

Means for Solving the Problems The present inventors have conducted intensive studies to solve these problems, and as a result, by increasing the surface area by roughening the surface of the inside of the vaporization chamber, the CVD raw material is removed from the inside of the vaporizer. It has been found that the material is efficiently heated from the surface, and as a result, the vaporization efficiency of the CVD raw material is improved. That is, the present invention provides a vaporization chamber for CVD raw materials,
A vaporizer having a supply port for supplying a CVD raw material to the vaporization chamber, a vaporized gas discharge port, and a heating unit for the vaporization chamber, wherein the constituent material of the vaporization chamber is stainless steel or nickel steel, A vaporizer characterized in that at least a part of a chamber side surface is subjected to a surface roughening treatment by a blast method.

[0009]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention is applied to a vaporizer which vaporizes a liquid CVD raw material or a liquid CVD raw material or a liquid CVD raw material obtained by dissolving a liquid CVD raw material in a solvent and supplies it to a CVD apparatus or the like. When a solid CVD raw material is used, it is particularly effective in that the vaporization efficiency is excellent. The vaporizer of the present invention is a vaporizer in which the constituent material of the vaporization chamber is stainless steel or nickel steel, and at least a part of the vaporization chamber side surface is subjected to a surface roughening treatment by a blast method.

[0010] CVD raw material to which the vaporizer of the present invention can be applied
Is a liquid at room temperature or a solid dissolved in a solvent.
Even if it can hold a liquid, it is particularly limited.
However, it is appropriately selected and used depending on the application. For example,
Tiger iso-propoxy titanium (Ti (OCH (CH_Three)_Two)
_Four), Tetra n-propoxy titanium (Ti (OC
_ThreeH₇)_Four), Tetra tert-butoxyzirconium (Zr
(OC (CH_Three)_Three)_Four), Tetra-n-butoxyzirconium
(Zr (OC_FourH₉)_Four), Tetramethoxy vanadium
(V (OCH_Three)_Four), Trimethoxyvanadyl oxide
(VO (OCH_Three)_Three), Pentaethoxy niobium (Nb
(OC_TwoH_Five)_Five), Pentaethoxy tantalum (Ta (O
C_TwoH_Five)_Five), Trimethoxyboron (B (OC
H_Three)_Three), Tri-iso-propoxy aluminum (Al (O
CH (CH_Three)_Two)_Three), Tetraethoxysilicon (Si
(OC_TwoH _Five)_Four), Tetraethoxygermanium (Ge
(OC_TwoH_Five)_Four), Tetramethoxytin (Sn (OC
H_Three)_Four), Trimethoxy phosphorus (P (OCH_Three)_Three),bird
Methoxyphosphine oxide (PO (OCH_Three)_Three), To
Liethoxy arsenic (As (OC_TwoH_Five)_Three), Triethoxy
Antimony (Sb (OC_TwoH_Five)_Three) At room temperature
Lucoxide can be mentioned.

In addition to the above, trimethyl aluminum (Al (CH ₃ ) ₃ ), dimethyl aluminum hydride (Al (CH ₃ ) ₂ H), tri-iso-butyl aluminum (Al (iso-C ₄ H ₉ ) ₃ ) ), Hexafluoroacetylacetone copper vinyltrimethylsilane ((CF ₃ CO) ₂
CHCu.CH ₂ CHSi (CH ₃ ) ₃ ), hexafluoroacetylacetone copper allyltrimethylsilane ((CF
₃ CO) ₂ CHCu.CH ₂ CHCH ₂ Si (CH ₃ ) ₃ ),
Bis (an iso-propyl cyclopentadienyl) tungsten dihalide _{((iso-C 3 H 7} C 5 H 5) 2 WH 2), tetradimethylamino zirconium (Zr (N (C
H ₃ ) ₂ ) ₄ ), pentadimethylamino tantalum (Ta
_{(N (CH 3) 2)} 5), penta diethylamino tantalum _{(Ta (N (C 2 H} 5) 2) 5), tetra dimethylamino titanium _{(Ti (N (CH 3)} 2) 4), tetra diethylamino titanium ( Examples of raw materials that are liquid at ordinary temperature, such as Ti (N (C ₂ H ₅ ) ₂ ) ₄ ), can be given.

Further, hexacarbonyl molybdenum (M
o (CO)₆), Dimethylpentoxy gold (Au (C
H_Three)_Two(OC_FiveH₇)), Bis (2,2,6,6, -tetramethyl-
3,5 heptanedionite) barium (Ba ((C (C
H_Three)_Three)_TwoC_ThreeHO_Two)_Two), Bis (2,2,6,6, -tetramethi)
Le-3,5 heptaneionite) strontium (Sr
((C (CH_Three)_Three)_TwoC_ThreeHO_Two)_Two), Tetra (2,2,6,6,
-Tetramethyl-3,5 heptandionite) titanium
(Ti ((C (CH_Three)_Three)_TwoC_ThreeHO_Two)_Four), Tetra (2,
2,6,6, -tetramethyl-3,5 heptane dionite) zircon
Nium (Zr ((C (CH_Three )_Three)_TwoC_ThreeHO_Two)_Four),Screw
(2,2,6,6-tetramethyl-3,5 heptane dionite) lead
(Pb ((C (CH_Three)_Three)_TwoC_ThreeHO_Two)_Two), (Jittery
(2,2,6,6-tetramethyl-3.5.
Heptandionite) titanium, (di-isopropoxy)
C) (2,2,6,6-tetramethyl-3,5, -heptanediony
G) titanium, tetrakis (isobutyryl pivaloyl)
(Methanate) zirconium or (isopropoxy)
Tris (2,2,6,6-, tetramethyl-3,5, -heptanediona
Examples of raw materials that are solid at room temperature such as zirconium
Can be. However, these are usually 0.1 to 1.0 mo
It is necessary to use it by dissolving it in an organic solvent at a concentration of about 1 / L.
is there.

The organic solvent used as a solvent for the solid CVD raw material usually has a boiling point of 40 ° C. to 140 ° C.
Organic solvent. As those organic solvents, for example,
Propyl ether, methyl butyl ether, ethyl propyl ether, ethyl butyl ether, trimethylene oxide, ethers such as tetrahydrofuran, tetrahydropyran, alcohols such as methyl alcohol, ethyl alcohol, propyl alcohol, butyl alcohol, acetone, ethyl methyl ketone, iso-propyl methyl ketone ,
ketones such as iso-butyl methyl ketone, propylamine,
Examples thereof include amines such as butylamine, diethylamine, dipropylamine and triethylamine; esters such as ethyl acetate, propyl acetate and butyl acetate; and hydrocarbons such as hexane, heptane and octane.

Hereinafter, the vaporizer of the present invention will be described in detail with reference to FIGS. 1 to 3, but the present invention is not limited thereto. FIG. 1A is a cross-sectional view showing an example of the vaporizer of the present invention, FIG. 1B is an enlarged view of a circle portion of FIG. 1A, FIG. 2 is a cross-sectional view showing an example of a CVD raw material supply section of the present invention, FIG. 3 is a configuration diagram showing an example of a vaporization supply system to which the vaporizer of the present invention is applied. The vaporizer of the present invention is shown in FIG.
As shown in FIG. 1A, a vaporizer having a CVD source vaporization chamber 1, a CVD source supply unit 2 for supplying the CVD source to the vaporization chamber, a vaporized gas outlet 3, and a heating means 4 for the vaporization chamber. The material 5 of the vaporization chamber is stainless steel or nickel steel, and at least a part of the vaporization chamber side surface 6 is a vaporizer whose surface is roughened by blasting as shown in FIG. 1 (B). .

In the vaporizer of the present invention, the shape of the vaporization chamber is not particularly limited.
The shape can be spherical, elliptical, barrel, conical, truncated conical, hemispherical or similar, but is usually cylindrical or similar to cylindrical. When stainless steel is used as a constituent material of the vaporization chamber, martensitic steel and ferritic stainless steel can be used, but SUS316, SU
It is preferable to use an austenitic stainless steel such as S316L or an austenitic ferritic stainless steel such as SUS329J1 or SUS329J2L. When nickel steel is used, it is preferable to use a high nickel steel containing 30% by weight or more of nickel, such as Inconel or Hastelloy, from the viewpoint of excellent corrosion resistance as described above.

In the vaporizer according to the present invention, the surface of the vaporization chamber constituting material on the vaporization chamber side is subjected to a roughening treatment by a blast method. Although the ratio of the surface subjected to the surface roughening treatment is not particularly limited, it is preferable that the entire surface on the vaporization chamber side be subjected to the surface roughening treatment. The surface roughening treatment by the blast method is performed using alumina, silicon carbide, glass beads or the like as a grinding agent. An object of the surface roughening treatment in the present invention is to increase the surface area of the inner wall surface of the vaporization chamber, thereby efficiently heating the CVD raw material from the inner wall surface of the vaporization chamber, and improving the vaporization efficiency of the CVD raw material.

In the vaporizer of the present invention, the surface roughness after the surface roughening treatment is preferably 0.5 to 20 μmRa, and if it is less than 0.5 μmRa, the effect of improving the vaporization efficiency is small, and the surface roughness is 20 μmRa. If the temperature exceeds the above range, a part of the CVD raw material will stay and be overheated, which may lower the quality of the vaporized gas. Austenitic stainless steel such as SUS316 and SUS316L is used as a constituent material of the vaporizing chamber of the conventional vaporizer, but the vaporizing chamber side surface is usually electrolytically polished, and the surface roughness is high. Is 0.1
μmRa or less.

Further, the vaporizer of the present invention is provided with a heating means capable of setting a desired temperature in accordance with the type, supply amount, vaporized gas concentration and other operating conditions of the liquid raw material. The mode of installation of the heating means is not particularly limited as long as the vaporization chamber can be heated and maintained with high accuracy. For example, a heater is provided by being built in a component on the side surface of the vaporizer. The heating temperature of the vaporization chamber varies depending on the type of the liquid raw material, the supply amount, the vaporized gas concentration, other operating conditions, and the like, but is usually set to about 40 to 250 ° C.

The vaporizer of the present invention can be used in combination with other means for improving the vaporization efficiency. For example, the constituent material of the vaporization chamber is stainless steel or nickel steel whose surface on the vaporization chamber side is roughened by blasting, and the direction of the supply port of the carrier gas is changed so that the carrier gas swirls in the vaporization chamber. It can be a vaporizer set to form. With such a configuration, the vaporizer of the present invention can exhibit more excellent effect of improving the vaporization efficiency. That is, solid-state CVD
The CVD raw material obtained by dissolving the raw material in the organic solvent is efficiently heated by the inner wall surface of the vaporization chamber, and is heated by the carrier gas supplied from the carrier gas supply port of the vaporization chamber and swirling along the inner wall surface of the vaporization chamber. Entrainment and contact heating allow efficient vaporization at the desired concentration and flow rate.

As a combination with other means for improving the vaporization efficiency, the constituent material of the vaporization chamber is stainless steel or nickel steel whose surface on the vaporization chamber side has been roughened by a blast method. An example of a vaporizer in which a projection having a heating means is fixedly provided at a lower portion of the vaporization chamber at the center of the vaporization chamber can be exemplified. As a result, the CVD raw material obtained by dissolving the solid CVD raw material in the organic solvent is efficiently heated on the inner wall surface of the vaporization chamber, and is heated at the projection in the center of the vaporization chamber to efficiently vaporize at the desired concentration and flow rate. Can be done.

Further, as a combination with other means for improving the vaporization efficiency, the constituent material of the vaporization chamber may be stainless steel or nickel steel whose surface on the vaporization chamber side has been roughened by blasting. A vaporizer in which at least a part of a contact portion of the CVD material supply section with the CVD material is made of a fluorine-based resin or a polyimide-based resin can be exemplified. In the raw material supply section of such a vaporizer, as shown in FIG. 2, the CVD raw material has heat resistance, corrosion resistance, heat insulation, and a fluorine-based resin or polyimide having characteristics that the CVD raw material is hard to adhere. It is supplied to a vaporization chamber through a flow path 8 made of a system resin.

Therefore, the vaporizer can prevent the organic solvent only from being vaporized due to the rapid heating of the CVD raw material by the heating means in the vaporization chamber, and the solid CVD raw material is less likely to adhere even if deposited. There is. With such a configuration, the vaporizer can supply a CVD material obtained by dissolving a solid CVD material in an organic solvent to a solid CV at a material supply port.
The D raw material can be efficiently heated by the inner wall surface of the vaporization chamber without being deposited and adhered, and can be vaporized efficiently at a desired concentration and flow rate.

FIG. 3 is a configuration diagram showing an example of a vaporization supply system to which the vaporizer and the vaporization supply method of the present invention are applied.
An object of the present invention is to efficiently vaporize and supply a liquid raw material at a desired concentration and flow rate. For this purpose, the raw material is already deteriorated or the concentration and flow rate are not sufficient before the raw material is supplied to the vaporizer. Should not be uniform. The liquid raw material container is a container for supplying the liquid raw material, and is not particularly limited in size and shape as long as it can hold the liquid raw material without deteriorating. When the liquid material container is held under pressure and supplied to the liquid flow rate control unit under pressure, it is preferable to adopt a structure capable of withstanding a pressure of about 5 kgf / cm ² .

The liquid flow control unit supplies the liquid raw material to the vaporizer quantitatively with high precision, and can supply the liquid raw material with high precision by using, for example, a liquid mass flow controller. It is also possible to configure a variable flow rate pump and a control valve, or a pump and a flow rate controller. When a pump is used, a double or multiple corrosion-resistant bellows pump or the like is usually used to supply the liquid raw material without a pulsating flow. Further, a check valve can be provided on the secondary side of the pump so that the flow rate can be controlled even when the CVD apparatus is operated at a reduced pressure.

[0025]

Next, the present invention will be described in detail with reference to examples, but the present invention is not limited to these examples.

Example 1 A stainless steel (SUS316) upper lid having a surface roughness of 0.1 μm Ra or less was used for the vaporization chamber as shown in FIG. After sealing the portion other than the surface portion, a surface roughening treatment was performed using glass beads or the like as an abrasive. Next, the surface subjected to the surface roughening treatment was cleaned with a solvent, and the surface roughening treatment was completed. As a result, the surface portion of the vaporization chamber has a surface roughness of 2.0 to
It was 3.0 μmRa. Similarly, among the constituent parts of the vaporization chamber, the bottom and side surfaces of stainless steel (SUS316) whose surface roughness is electropolished to 0.1 μm Ra or less also have the same parts as the surface of the vaporization chamber in the same manner as described above. The surface was roughened to a surface roughness of 2.0 to 3.0 μmRa.

Next, as shown in FIG. 2, a CVD material in which the inside and the surface on the side of the vaporization chamber are made of a fluorine-based resin (PFA), and the contact part with the outside of the vaporizer is made of stainless steel (SUS316). A supply unit was manufactured. The component part of the fluorine-based resin has a cylindrical shape with an outer diameter of 16 mm and a height of 34.2 mm, and the thickness of the stainless steel on the outside thereof is 2.0 mm. Also, as piping for CVD raw material and carrier gas,
Fitting at the tip (SW manufactured by Atsugi Valve Fitting Co., Ltd.)
Two stainless steel tubes having an inner diameter of 1.5 mm and having an inside diameter of 1.5 mm (AGELOK) are inserted and attached to the inside of the fluororesin component, and the CVD raw material and the carrier gas are mixed inside the fluororesin component and then vaporized. It was configured to be supplied to the room. In addition, the inner diameter of the flow path of the CVD gas and the carrier gas composed of the fluororesin was 0.3 mm.

The upper lid, the bottom and the side of the vaporization chamber,
A vaporizer as shown in FIG. 1 was manufactured by combining a CVD material supply section, a vaporized gas outlet, a heater, and the like.
The vaporization chamber had a cylindrical shape with an inner diameter of 65 mm and a height of 92.5 mm, a protrusion at the bottom was 27.5 mm in height, and a vaporized gas outlet was provided at a height of 15 mm from the bottom. Next, a liquid mass flow controller, a carrier gas supply line and the like were connected to produce a vaporization supply system as shown in FIG. In addition, at the vaporizer outlet, CV
A liquid nitrogen cooling trap for capturing the D raw material was provided.

Using the apparatus described above, a vaporization supply test was performed as follows. Vaporization chamber at 10 torr, 270
C., and a liquid CVD raw material in which Sr (DPM) ₂ was dissolved in a THF solvent at a concentration of 0.1 mol / L and nitrogen gas were vaporized at flow rates of 1.0 g / min and 0.3 L / min, respectively. The liquid CVD raw material was vaporized in the vaporization chamber after being mixed inside the constituent part of the fluorine-based resin by supplying it to the CVD raw material supply part of the vessel. At the vaporizer outlet, the vaporized gas was cooled and captured for 10 minutes, and the vaporization supply was terminated. As a result of collecting Sr (DPM) ₂ from the vaporized gas collected by cooling and measuring the amount captured with an electronic balance and analyzing it by FT-IR, the vaporization efficiency was 99.5%.

Example 2 A vaporizer was manufactured in the same manner as in Example 1 except that the constituent material of the vaporization chamber in Example 1 was changed to high nickel steel containing 40 wt% nickel. As a result, the surface portion of the vaporization chamber had a surface roughness of 3.5 to 5.5 μmRa. Using this vaporizer, a vaporization supply test was performed in the same manner as in Example 1. Sr (DP
M) Take ₂ and measure the amount captured with an electronic balance.
As a result of analysis and examination by T-IR, the vaporization efficiency was 99.
6%.

Comparative Example 1 A vaporizer was manufactured in the same manner as in Example 1 except that the surface roughening treatment was not performed. Using this vaporizer, a vaporization supply test was performed in the same manner as in Example 1. As a result of sampling Sr (DPM) ₂ from the vaporized gas collected by cooling and measuring the amount captured with an electronic balance and analyzing it by FT-IR, the vaporization efficiency was 85%.

[0032]

According to the vaporizer of the present invention, even when a solid CVD raw material is used as a CVD raw material, a high quality vaporized gas can be obtained by efficiently vaporizing it at a desired concentration and flow rate. .

[Brief description of the drawings]

FIG. 1A is a cross-sectional view showing an example of the vaporizer of the present invention. FIG.

FIG. 2 is a sectional view showing an example of a CVD raw material supply section of the vaporizer of the present invention.

FIG. 3 is a configuration diagram showing an example of a vaporization supply system to which the vaporizer of the present invention is applied.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Vaporization chamber 2 CVD raw material supply part 3 Vaporized gas discharge port 4 Heater 5 Material of vaporization chamber 6 Surface of vaporization chamber 7 Fluorine resin or polyimide resin constituent part 8 Flow path of CVD raw material 9 Flow path of carrier gas 10 Flow path of CVD raw material and carrier gas 11 Liquid CVD raw material 12 Liquid CVD raw material container 13 Liquid flow rate control unit 14 Gas flow rate controller 15 Carrier gas supply line 16 Vaporizer 17 CVD device

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4K030 AA11 CA04 EA01 FA10 KA45 KA46 LA15 5F045 EB03 EE02 EE20 EK05

Claims (8)

[Claims] 1. A vaporizer having a vaporization chamber for a CVD raw material, a supply port for supplying the CVD raw material to the vaporization chamber, a vaporized gas discharge port, and a heating means for the vaporization chamber, wherein the vaporization chamber has a structure. A vaporizer characterized in that the material is stainless steel or nickel steel, and at least a part of the vaporization chamber side surface is subjected to a surface roughening treatment by a blast method. 2. The roughened surface has a roughness of 0.5
The vaporizer according to claim 1, wherein the vaporizer is で 20 μmRa. 3. The vaporizer according to claim 1, further comprising a carrier gas supply port oriented so that the carrier gas forms a swirling flow in the vaporization chamber. 4. The vaporizer according to claim 1, wherein a projection having a heating means is fixedly provided at a lower portion of the vaporization chamber at a central portion of the vaporization chamber. 5. The vaporizer according to claim 1, wherein at least a part of a contact portion of the CVD material supply section with the CVD material is made of a fluorine resin or a polyimide resin. 6. The vaporizer according to claim 1, wherein the CVD source is a CVD source obtained by dissolving a solid CVD source in an organic solvent. 7. The solid CVD raw material is bis (2,2,6,6-tetramethyl-3,5heptaneionite) barium, bis (2,2,6,6, -tetramethyl-3,5). Heptanedionite) strontium, tetra (2,2,6,6-tetramethyl-3,5 heptanedionite) titanium, tetra (2,2,6,6, -tetramethyl-3,5 heptanedionite) Zirconium, bis (2,2,6,6, -tetramethyl-3,5 heptane dionite)
Lead, bis (cyclopentadienyl) barium, bis (cyclopentadienyl) strontium, hexacarbonylmolybdenum, dimethylpentoxygold, (ditertiary butoxidebis) (2,2,6,6, -tetramethyl-3.5. (Heptaneionite) titanium, (di-isopropoxy) (2,2,6,6-tetramethyl-3,5, -heptaneionite) titanium, tetrakis (isobutyrylpivaloylmethanate) zirconium, or ( Isopropoxy)
The vaporizer according to claim 6, wherein the vaporizer is tris (2,2,6,6-tetramethyl-3,5-heptanedionite) zirconium. 8. The organic solvent has a boiling point of 40 ° C. to 1 ° C.
The vaporizer according to claim 6, which is at least one selected from ethers, alcohols, ketones, amines, esters, and hydrocarbons at 40C.