KR102169814B1 - Film formation method and film formation apparatus - Google Patents

Abstract

A film forming method and a film forming apparatus capable of stably forming a resin layer having a desired film quality and pattern shape are provided. The film forming method according to one embodiment of the present invention cools the substrate W to a first temperature or lower in a chamber maintained in a reduced pressure atmosphere, and contains an energy ray-curable resin, and is capable of being liquefied at the first temperature or lower. ) Is supplied from the gas supply unit 13 to the surface of the substrate W, and a mask member 16 maintained at a second temperature higher than the first temperature and having a predetermined opening pattern is applied to the surface of the substrate W. They are arranged opposite to each other, and energy rays are irradiated on the surface of the substrate W.

Description

Film formation method and film formation apparatus

The present invention relates to a film forming method and a film forming apparatus for patterning and forming a resin layer made of an energy ray-curable resin.

A method of forming a film on a substrate is known as a resin layer made of an energy ray-curable resin such as an ultraviolet-curable resin. For example, Patent Document 1 describes a method of forming a resin layer obtained by condensing a raw material gas containing an ultraviolet curing resin on the surface of a substrate cooled to a predetermined temperature, and then curing the resin layer by irradiation with ultraviolet rays. have. In addition, Patent Document 1 describes a method of forming a pattern of an ultraviolet curable resin layer by placing a mask capable of shielding a non-film-forming area on a substrate (see paragraph [0045] of Patent Document 1).

Prior art literature

Patent literature

Patent Document 1: Japanese Patent Application Laid-Open No. 2013-64187

However, in the case of normal mask film formation, the source gas is also adhered to the mask. For this reason, when the mask is cooled together with the substrate, the source gas is condensed on the mask, and the energy ray-curable resin in the source gas is deposited on the mask by subsequent ultraviolet irradiation. It is said that when the amount of film deposited on the mask increases by repetition of these phenomena, the shape of the opening pattern of the mask decreases or particles are generated, making it difficult to stably form a resin layer having a desired film quality and pattern shape. there is a problem.

In view of the above circumstances, an object of the present invention is to provide a film forming method and a film forming apparatus capable of stably forming a resin layer having a desired film quality and pattern shape.

In order to achieve the above object, a film forming method according to one embodiment of the present invention includes cooling a substrate to a first temperature or lower in a chamber maintained in a reduced pressure atmosphere.

A raw material gas containing an energy ray-curable resin and capable of being liquefied below the first temperature is supplied from a gas supply unit to the surface of the substrate.

A mask member maintained at a second temperature higher than the first temperature and having a predetermined opening pattern is disposed opposite the surface of the substrate.

Energy rays are irradiated on the surface of the substrate.

In the film forming method, the source gas is condensed by contact with the surface of the substrate cooled to the first temperature or lower, thereby forming a liquid film containing an energy ray-curable resin on the surface of the substrate. On the other hand, since the mask member disposed opposite the surface of the substrate is maintained at a temperature (second temperature) at which the source gas can be evaporated, a region of the liquid film on the substrate shielded by the mask member is from the mask member. It evaporates (regasses) by radiant heat or a reduced pressure atmosphere in the chamber. Thereby, the liquid film is patterned so as to correspond to the shape of the opening pattern. Thereafter, by irradiation of energy rays, a cured resin layer of energy ray cured resin is formed on the substrate.

Further, since the mask member is maintained at the second temperature, condensation of the raw material gas to the mask member is prevented, and thus the deposition of the energy ray-curable resin in the raw material gas onto the mask member is prevented. Thereby, while maintaining the shape accuracy of the opening pattern of the mask member, generation of particles due to detachment of the deposited film from the mask member is prevented. Therefore, according to the film forming method, it becomes possible to stably form a resin layer having a desired film quality and pattern shape.

The method of maintaining the mask member at the second temperature is not particularly limited, and for example, heating the mask member to the second temperature with radiant heat or heat conduction from an appropriate heating source installed inside the chamber, or, the second The mask member may be heated so as not to go below the temperature.

Alternatively, the mask member may be self-heated to be maintained at the second temperature, such as incorporating a heater in the mask member or constituting the mask member with a resistance heating element.

Further, when the second temperature is near room temperature, the mask member may be maintained at the second temperature by setting a mutual positional relationship so that the mask member does not contact the substrate cooled to the first temperature.

The arrangement of the mask member on the substrate surface may be before or after the liquid film of the energy ray-curable resin is formed on the substrate surface. The facing distance of the mask member with respect to the substrate surface is also not particularly limited. Typically, the mask member is disposed close to the substrate surface. In this case, the distance between the mask member and the substrate surface may be fixed or variable.

For example, in the step of disposing the mask member, after forming a liquid film containing the energy ray-curable resin on the surface of the substrate by supplying the source gas to the surface of the substrate, the mask member is You may bring it close to the surface.

Alternatively, in the step of supplying the source gas, after disposing the mask member at a position separated from the surface of the substrate, the source gas may be supplied to the surface of the substrate through the opening pattern.

Alternatively, in the step of disposing the mask member, the mask member is separated by a second distance shorter than the first distance from the surface of the substrate from a position where the mask member is separated by a first distance from the surface of the substrate. It may include moving it to a position.

Further, the second distance may be zero.

The film forming method may further include a step of heating the mask member to the second temperature by a heating source provided in the chamber before disposing the mask member to face the surface of the substrate.

In this case, the gas supply unit may be formed of a shower head disposed inside the chamber and having the heating source, and the mask member may be heated by radiant heat or heat conduction from the shower head.

Alternatively, the film forming method may further include a step of heating the mask member to the second temperature by a heating element included in the mask member before disposing the mask member to face the surface of the substrate.

On the other hand, a film forming apparatus according to one embodiment of the present invention includes a chamber, a stage, a gas supply unit, a mask member, and an irradiation source.

The chamber is configured to be capable of maintaining a reduced pressure atmosphere.

The stage has a support surface for supporting the substrate and a cooling source capable of cooling the support surface to a first temperature or less, and is disposed inside the chamber.

The gas supply unit is arranged to face the stage and is configured to be capable of supplying a raw material gas capable of being liquefied at or below the first temperature to the substrate on the support surface.

The mask member is capable of maintaining a second temperature higher than the first temperature, has a predetermined opening pattern, and is disposed to face the support surface.

The irradiation source is configured to be capable of irradiating an energy ray for curing the energy ray-curable resin toward the support surface.

As described above, according to the present invention, a resin layer having a desired film quality and pattern shape can be stably formed.

1 is a cross-sectional view schematically showing a film forming apparatus according to an embodiment of the present invention.
2 is a schematic plan view of a mask member in the film forming apparatus.
3 is a schematic side cross-sectional view of a main part of a film forming apparatus showing an example of a film forming method according to the present embodiment.
4 is a schematic side cross-sectional view of a main portion of a film forming apparatus showing an example of a film forming method according to a comparative example.
5 is a schematic side cross-sectional view of a main portion of a film forming apparatus showing another example of the film forming method according to the present embodiment.
6 is a schematic side cross-sectional view of a main portion of a film forming apparatus showing still another example of the film forming method according to the present embodiment.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

1 is a cross-sectional view schematically showing a film forming apparatus according to an embodiment of the present invention.

In addition, in the figure, the X-axis, Y-axis, and Z-axis represent three mutually orthogonal directions, respectively, the X-axis and Y-axis correspond to the horizontal direction, and the Z-axis correspond to the height direction.

[Film forming apparatus]

The film forming apparatus 1 of this embodiment includes a chamber 10, a gas supply unit 13, an irradiation source 14, a stage 15, and a mask member 16.

The film forming apparatus 1 supplies a raw material gas containing an ultraviolet curing resin (hereinafter, also referred to as a UV curing resin) as an energy ray curing resin to the surface of the substrate W supported by the stage 15, and It is configured to be capable of forming a liquid film made of condensate of gas on the surface of the substrate W. In addition, the film forming apparatus 1 irradiates ultraviolet rays as energy rays from the irradiation source 14 to the surface of the substrate W through the mask member 16 so that the surface of the substrate W can be cured with ultraviolet rays of a predetermined shape. It is constructed to make it possible to form a strata.

As the substrate W, various substrates such as a glass plate, a ceramic plate, and a semiconductor wafer, on which the ultraviolet curable resin layer is formed on the surface, are used. The shape of the substrate is not particularly limited, and may be rectangular or circular. Various functional elements may be provided on the surface of the substrate W covered with the ultraviolet curable resin layer.

Hereinafter, the details of each part of the film forming apparatus 1 will be described.

(chamber)

The chamber 10 has a divided structure of the first chamber body 11 and the second chamber body 12. The first chamber main body 11 and the second chamber main body 12 are connected to each other via a partition wall 101 (gas supply part 13) parallel to the XY plane, whereby the first chamber main body ( 11) is divided into a first space (S1) and a second space (S2) within the second chamber body (12).

The first space portion S1 is connected to the vacuum exhaust system 19 and is configured to be evacuated in a predetermined reduced pressure atmosphere by the vacuum exhaust system 19. The degree of vacuum at this time is not particularly limited, and is considered to be, for example, 10 ^-3 to 500 Pa. The first space part S1 is maintained in the predetermined reduced pressure atmosphere by receiving an evacuation action by the vacuum exhaust system 19 during the film forming process of the substrate W.

On the other hand, the 2nd space part S2 is maintained at atmospheric pressure, and the irradiation source 14 mentioned later is arrange|positioned inside it.

(stage)

The stage 15 is installed in the first space S1 of the chamber 10. The stage 15 has a support surface 151 capable of supporting the substrate W, and in the present embodiment, the support surface 151 is formed parallel to the XY plane so as to face the partition 101. The support surface 151 has an area larger than that of the substrate W, and its shape is not particularly limited, and may be circular or rectangular.

The stage 15 is attached to the first chamber main body 11 through an unillustrated seal mechanism or the like, and is connected to a refrigerant supply source 152 installed outside the chamber 10. Inside the stage 15, a circulation flow path through which the refrigerant supplied from the refrigerant supply source 152 passes is provided as a cooling source. The coolant supply source 152 is configured to cool the support surface 151 so that the entire surface of the substrate W can be maintained below a predetermined temperature (first temperature).

The first temperature is considered to be a temperature at which the source gas supplied from the gas supply unit 13 to be described later condenses and liquefies inside the first chamber main body 11. The first temperature is appropriately set according to the kind of the energy ray-curable resin constituting the raw material gas, and in the case of an acrylic resin, it is typically set to a temperature below room temperature (for example, 0° C.).

In addition, the stage 15 may be configured to be able to move up and down along the Z-axis direction or rotate around the Z-axis inside the first chamber main body 11. In addition, it is also possible to adjust the distance between the substrate W and the mask member 16 by the lifting operation of the stage 15.

(Gas supply)

The gas supply part 13 has a gas head-like structure formed integrally with the partition wall 101. The entire gas supply unit 13 is made of a material capable of transmitting ultraviolet rays (for example, quartz glass).

In the gas supply unit 13, an internal space 130 connected to the gas supply line 100 is formed. In addition, on the bottom of the gas supply unit 13 facing the first space S1, the raw material gas introduced into the internal space 130 is supplied toward the support surface 151 of the stage 15. A plurality of gas supply holes 131 are provided. In this way, the gas supply unit 13 is configured as a shower head that supplies the raw material gas toward the substrate W on the support surface 151.

The gas supply unit 13 includes a heating unit 132 capable of maintaining the inner space 130 and the plurality of gas supply holes 131 at a temperature higher than the first temperature (second temperature). The heating unit 132 is constituted by embedding a resistance heating wire made of, for example, carbon or the like in the bottom surface of the gas supply unit 13.

In addition, the heating unit 132 also has a function as a heating source for heating the mask member 16 to the second temperature over the entire surface thereof to be described later.

The second temperature is considered to be a temperature capable of preventing condensation of the source gas introduced into the internal space 130. The second temperature is appropriately set according to the type of energy ray-curable resin constituting the raw material gas, and in the case of an acrylic resin, it is typically set to a temperature higher than room temperature (for example, 30° C.).

The gas supply line 100 includes a resin material supply line 110 and a vaporizer 120.

The resin material supply line 110 includes a tank 111 containing a liquid UV curable resin and a pipe 112 for conveying the UV curing resin from the tank 111 to the vaporizer 120. Although the acrylic resin material is used in this embodiment as a UV curing resin, of course, it is not limited to this. As a method of conveying the UV-curable resin from the tank 111 to the vaporizer 120, for example, pressure feeding using a carrier gas made of an inert gas may be mentioned. The pipe 112 may be provided with a flow control valve V1 or the like.

The vaporizer 120 is configured to vaporize the UV-curable resin conveyed through the pipe 112 and to generate a raw material gas containing the UV-curable resin. The vaporizer 120 has a heating mechanism (not shown) and is configured to heat evaporate a UV curable resin to generate a raw material gas. The raw material gas generated by the vaporizer 120 is introduced into the internal space 130 of the gas supply unit 13 through the pipe 121. At this time, the flow rate of the raw material gas introduced into the gas supply unit 13 is controlled by the flow rate adjustment valve V2 attached to the pipe 121. In addition, the piping 121 is temperature-adjusted so that it is possible to maintain the vaporized state of the source gas by a heating mechanism not shown.

(Investigator)

The irradiation source 14 is disposed in the second space S2 of the chamber 10 to irradiate ultraviolet rays toward the support surface 151 of the stage 15 through the partition wall 101 (gas supply unit 13). It is configured to be possible. The irradiation source 14 has an ultraviolet light source composed of, for example, a plurality of ultraviolet lamps.

(No mask)

The mask member 16 is disposed in the first space S1 of the chamber 10, and in this embodiment, with respect to the substrate W on the support surface 151 by a mask moving mechanism not shown, It is configured to be movable according to the X-axis direction, Y-axis direction, Z-axis direction, and rotational direction (θ direction) around the Z-axis.

2 is a schematic plan view of the mask member 16.

The mask member 16 is typically made of a material that is non-transparent to ultraviolet rays (a material that does not transmit ultraviolet rays) such as a metallic material. The mask member 16 is formed in a size capable of covering the surface of the substrate W, and its shape can also be arbitrarily selected according to the shape of the substrate W.

The mask member 16 is configured to be able to maintain the second temperature. Typically, the mask member 16 is configured to be heated or heated by radiant heat or heat conduction from an appropriate heating source inside the chamber 10 (for example, the heating unit 132 of the gas supply unit 13). do.

Alternatively, the mask member 16 may be provided with a heating element such as a resistance heating wire, and the mask member 16 may be constituted by a heating element. In this case, since it becomes possible to heat the mask member 16 itself by energization, the mask member 16 can be maintained at a predetermined temperature over a long period of time.

The mask member 16 has an opening pattern 16P in order to form a resin layer of a desired patterning shape. The opening pattern 16P is constituted by a plurality of openings 160, and the shape of each opening 160 is not limited to the same case, and the shape is also not limited to a rectangle. The mask member 16 has a function of limiting an ultraviolet irradiation area to the substrate W when irradiating ultraviolet rays from the irradiation source 14 to the substrate W on the support surface 151.

Further, upon irradiation of ultraviolet rays onto the substrate W, the mask member 16 may be moved to a position where the substrate W is not covered.

The mask member 16 is configured to be movable in the first space S1 through the mask moving mechanism. Thereby, the alignment with respect to the substrate W on the support surface 151 is made possible, and the distance in the Z-axis direction between the substrate W is made changeable.

In particular, in this embodiment, the mask member 16 has a position (first position) close to the bottom surface of the gas supply unit 13 as indicated by a chain two-dotted line in FIG. 1 and a support surface as indicated by a solid line in FIG. It is configured to be movable along the Z-axis direction over a position (second position) close to the upper substrate W (151). The mask moving mechanism may be configured to be capable of stopping the mask member 16 at an arbitrary position between the first position and the second position.

The first position is set to a position capable of heating to the second temperature by radiant heat from the heating unit 132 of the gas supply unit 13. The mask member 16 may be subjected to an appropriate surface treatment for efficiently absorbing radiant heat from the heating unit 132.

Further, the first position may be a position where the mask member 16 contacts the bottom surface of the gas supply unit 13. In this case, the mask member 16 can be heated to the second temperature by heat conduction from the heating unit 132 of the gas supply unit 13.

On the other hand, the second position is a position where it is possible to evaporate (evaporate) a liquid film made of a condensate of the raw material gas formed on the surface of the substrate W by radiant heat from the mask member 16 heated to the second temperature. Is set. The facing distance of the mask member 16 from the substrate surface at this time is set to, for example, several mm to several cm.

Further, the opposing distance may be zero. In this case, the mask member 16 and the substrate W come into contact with each other.

The film forming apparatus 1 places the mask member 16 close to the substrate W before or after forming the liquid film of the source gas on the surface of the substrate W on the stage 15, The liquid film on the substrate W covered with (16) is evaporated by radiant heat from the mask member (16). Thereafter, the film forming apparatus 1 cures the remaining liquid film by irradiating the surface of the substrate W with ultraviolet rays from the irradiation source 14 through the opening pattern 16P of the mask member 16. Thus, a resin layer having a predetermined shape is formed on the substrate W.

[Method of film formation]

Hereinafter, a film forming method using the film forming apparatus 1 configured as described above will be described.

(Film formation example 1)

3A to 3C are schematic side cross-sectional views of main portions of the film forming apparatus 1 showing an example of the film forming method according to the present embodiment.

Before the start of film formation, the mask member 16 is at a first position close to the gas supply unit 13, as shown in Fig. 3A, and the heating unit 132 (see Fig. 1) together with the gas supply unit 13 ) To prevent condensation (liquefaction) of the raw material gas by heating to the second temperature. Meanwhile, the first space S1 of the chamber 10 is maintained in a predetermined reduced pressure atmosphere, and the substrate W on the stage 15 is cooled to the first temperature required to condense (liquefy) the source gas. Has been.

In this state, the source gas G introduced into the gas supply unit 13 through the gas supply line 100 is, as shown in FIG. 3A, the internal space 130 and the plurality of gas supply holes 131 Through this, it is supplied to the surface of the substrate W on the stage 15. Then, the source gas G is condensed by contact with the surface of the substrate W maintained at the first temperature, and the liquid film L1 is formed on the surface of the substrate W.

At this time, the mask member 16 is disposed at a position capable of contacting the source gas G supplied from the gas supply unit 13, but as described above, the mask member 16 is at the second temperature. Since it is held, condensation of the source gas G on the mask member 16 is prevented. Accordingly, the film of the energy ray-curable resin in the raw material gas onto the mask member 16 is prevented.

In addition, since the mask member 16 is disposed between the gas supply unit 13 and the substrate W on the stage 15, the shielding structure is provided in the supply of the source gas G to the surface of the substrate W. However, by adjusting the distance between the mask member 16 and the substrate W, the source gas G turns to a region facing the mask member 16 on the surface of the substrate W, resulting in Therefore, since the liquid film L1 is formed with a substantially uniform thickness over the entire surface of the substrate W, there is no problem in film formation. In addition, depending on the type of energy ray-curable resin used, the surface of the substrate, etc., the wettability of the liquid film L1 on the surface of the substrate W can be expected, and the liquid film L1 having a more uniform thickness can be formed. It becomes possible.

In addition, depending on the type of energy ray-curable resin to be used, the surface properties of the substrate, etc., sufficient wettability of the liquid film may not be expected. In this case, during film formation, the mask member 16 may be placed on standby at a non-direct position of the gas supply unit 13. In the heating treatment of the mask member 16 at that time, a heat source may be separately provided in the waiting area, and the mask member 16 may be heated to the second temperature by the heat source.

Next, as shown in Fig. 3B, the mask member 16 is moved from the first position toward the second position. With the approach of the mask member 16, a part of the liquid film L1 on the substrate W (area facing the mask member 16) is evaporated (regasified) by radiant heat from the mask member 16 Is promoted.

At this time, the supply of the source gas G from the gas supply unit 13 may be stopped or may be continued. Even when supply of the source gas G continues, the region of the liquid film L1 shielded by the mask member 16 is efficiently evaporated by the radiant heat and the reduced pressure atmosphere. In either case of stopping and continuing the supply of the source gas G, the region of the liquid film L1 facing the opening portion 160 (the opening pattern 16P) of the mask member 16 is a region other than that Since a larger film thickness can be maintained, subsequent patterning of the liquid film L1 becomes easy.

When the mask member 16 reaches the second position, the evaporation action due to radiant heat from the mask member 16 is promoted by proximity to the mask member 16, so that the liquid film L1 on the substrate W is , Patterned in a shape corresponding to the opening pattern 16P. Also in this case, the supply of the source gas G from the gas supply unit 13 may be stopped or may be continued.

At this time, since the liquid film returned directly under the mask member 16 is efficiently removed by the radiant heat of the mask member 16, a change in the pattern shape of the liquid film L1 is suppressed. Since the pattern shape of the liquid film L1 also has heat radiation from the inner circumferential surface of the opening portion 160 of the mask member 16, it does not strictly match the size of each opening portion 160, and typically, each It is slightly smaller than the opening 160.

Next, as shown in Fig. 3C, the supply of the source gas G is stopped, and ultraviolet UV is irradiated onto the substrate W from the irradiation source 14, and the liquid film exposed from the opening pattern 16P (L1) is cured, whereby the resin layer L2 of a predetermined shape is formed on the substrate W.

In addition, since ultraviolet UV is irradiated to the surface of the substrate W through the mask member 16, curing of the region of the liquid film L1 shielded by the mask member 16 is prevented. As a result, for example, even when the radiant heat from the mask member 16 is not sufficient, the uncured liquid film region covered by the mask member 16 undergoes an evaporation action due to the reduced pressure atmosphere, and the substrate W It is definitely removed from the image. For this reason, it becomes possible to stably form the resin layer L2 of a predetermined shape on the board|substrate W even if the mask member 16 is not heated more than necessary.

After that, the mask member 16 rises from the second position to the first position shown in FIG. 3A, and the substrate W on the stage 15 is carried out to the outside of the chamber 10, and a new substrate ( W) is carried onto the stage 15 from the outside of the chamber 10. Thereafter, by repeating the same process as described above, the film forming process on the substrate is performed.

4 is a schematic side cross-sectional view illustrating a comparative example in which a mask M is disposed on a substrate W to form a film.

As shown in Fig. 4, if the mask member M is directly provided on the surface of the substrate W cooled to a temperature at which the source gas G can be condensed, the mask member M is also cooled, so that only the surface of the substrate W is In addition, a liquid film L1 made of a condensate of the source gas G is formed on the surface of the mask member M as well.

Therefore, the energy ray-curable resin in the raw material gas is deposited on the mask member M by subsequent ultraviolet irradiation. If the amount of film deposited on the mask member M increases by repetition of these phenomena, the degree of the mask (the degree of the opening shape) decreases or particles are generated, making it difficult to stably form a resin layer having a desired film quality and pattern shape. There is a problem of becoming.

On the other hand, according to the present embodiment, since the mask member 16 is maintained at a temperature (second temperature) capable of preventing condensation of the source gas G, the source gas G on the mask member 16 ) Is prevented from condensation and thus the deposition of the UV curable resin in the raw material gas G onto the mask member 16 is prevented. Thereby, while maintaining the shape accuracy of the opening pattern 16P of the mask member 16, generation|occurrence|production of particles due to detachment of a film from the mask member 16 is prevented. Therefore, according to the present embodiment, it becomes possible to stably form a resin layer having a desired film quality and pattern shape.

(Film formation example 2)

5 is a schematic side cross-sectional view of a main part of the film forming apparatus 1 showing another example of the film forming method according to the present embodiment.

This film formation example 2 differs from the film formation example 1 in that the position of the mask member 16 facing the substrate W on the stage 15 is fixed at the second position. That is, in the present example, the position of the mask member 16 is fixed during the curing process of the liquid film L1 by ultraviolet irradiation from the film forming process of the liquid film L1 on the substrate W. Also by such a method, it becomes possible to obtain the same effect as in the film forming method 1 described above.

Further, in the present example, since the mask member 16 is disposed at a position close to the surface of the substrate W, the source gas G is transferred to the substrate W through the opening pattern 16P of the mask member 16. Supplied to the surface. In this case, there is a possibility that the liquid film L1 in which the source gas G is condensed may get wet in the gap between the mask member 16 and the substrate W, but the liquid film L1 returning directly under the mask member 16 is , Since the mask member 16 is efficiently removed by radiant heat, the liquid film L1 does not exist directly under the mask member 16. Accordingly, the liquid film L1 having a shape corresponding to the opening pattern 16P of the mask member 16 is formed directly on the substrate W. Accordingly, compared to the case of patterning the liquid film L1 by bringing the mask member 16 close to the substrate W in a later step, it becomes possible to quickly form the liquid film L1 having a predetermined shape. As a result, it becomes possible to shorten the processing time and to realize an improvement in throughput.

Further, in the present example, the heat treatment of the mask member 16 to the second temperature can be performed, for example, at the time of carrying the substrate W in/out. The heating source in this case may be the heating unit 132 of the gas supply unit 13, similarly to the film formation example 1, or may be a heating source separately provided in the chamber 10.

Alternatively, when the mask member 16 includes a heating element, the mask member 16 is heated to the second temperature by the heating element before disposing the mask member 16 to face the surface of the substrate W. You can do it.

(Film Formation Example 3)

6A to 6C are schematic side cross-sectional views of main portions of the film forming apparatus 1 showing still another example of the film forming method according to the present embodiment.

This film formation example 3 differs from film formation example 1 in that there are a plurality of positions close to the mask member 16 with respect to the substrate W in the formation and patterning process of the liquid film L1 on the substrate W. . That is, in the present example, the mask member 16 is at a position (third position) separated by a first distance from the surface of the substrate W when the liquid film L1 is formed, and patterning of the liquid film L1 At the time, it moves to a position (second position) separated by a second distance shorter than the first distance from the surface of the substrate W.

In the third position, for example, as shown in FIG. 6A, a region shielded by the mask member 16 of the liquid film L1 on the substrate W is evaporated by radiant heat from the mask member 16. It is set to the triggered position.

When the liquid film L1 is formed, as shown in FIG. 6A, the mask member 16 is disposed at the third position and the source gas G is formed through the opening pattern 16P of the mask member 16. Is supplied onto the substrate W. And, when patterning the liquid film L1, as shown in FIG. 6B, the mask member 16 moves from the third position to the second position, and the liquid film L1 shielded by the mask member 16 ) To evaporate. Further, at the time of patterning the liquid film L1, as in the film formation example 1, the supply of the source gas G may be stopped or may be continued.

Thereafter, as shown in Fig. 6C, the supply of the source gas G is stopped and ultraviolet UV is irradiated onto the substrate W from the irradiation source 14, so that the liquid film exposed from the opening pattern 16P ( L1) is cured, thereby forming a resin layer L2 having a predetermined shape on the substrate W.

Also in this example, the same effect as in the film formation example 1 can be obtained. According to the present example, when the liquid film L1 is formed, since the mask member 16 is disposed at the third position, the liquid film L1 having a shape corresponding to the opening pattern 16P of the mask member 16 is used as the substrate. It becomes easy to form on (W). In addition, since the separation distance from the substrate W is larger than the second position, the temperature increase of the substrate W due to radiant heat of the mask member 16 is suppressed, and the raw material gas G on the substrate W It becomes possible to efficiently form the liquid film L1 by increasing the condensation efficiency of.

Also in the present example, the heat treatment of the mask member 16 to the second temperature can be performed, for example, at the time of carrying the substrate W in/out. The heating source in this case may be the heating unit 132 of the gas supply unit 13, similarly to the film formation example 1, or may be a heating source separately provided in the chamber 10.

Alternatively, when the mask member 16 includes a heating element, the mask member 16 is heated to the second temperature by the heating element before disposing the mask member 16 to face the surface of the substrate W. You can do it.

As mentioned above, although the embodiment of this invention was demonstrated, it goes without saying that this invention is not limited only to the above-mentioned embodiment, and various changes can be added.

For example, in the above embodiment, in order to maintain the mask member 16 at the second temperature, the mask member 16 is controlled by radiant heat or heat conduction from the gas supply unit 13 (heating unit 132). It is configured to heat to 2 temperatures. On the other hand, when the liquefaction temperature (first temperature) of the raw material gas is 0°C or less, the second temperature can be set near room temperature, so there is no need for heating operation of the mask member 16 as described above. , It becomes possible to maintain the mask member 16 at the second temperature. Therefore, depending on the kind of the source gas, the heating source for heating the mask member 16 may be omitted.

Alternatively, a temperature sensor capable of detecting the temperature of the mask member 16 is mounted on the mask member 16, and the temperature of the mask member 16 is monitored based on the output of the temperature sensor, which is the second temperature. When the temperature is lower than the predetermined temperature, the mask member 16 may be heated to the second temperature by using a heating source such as the gas supply unit 13.

In addition, in the above embodiment, the mask member 16 is disposed in the first space S1 of the chamber 10, but it is not limited to this, and the waiting room in which the mask member 16 can be put on standby is an example. For example, it may be provided adjacent to the first space S1. In this case, a heating source capable of heating the mask member 16 to the second temperature may be provided in the waiting room.

In addition, in the above embodiment, the curing treatment of the liquid film L1 was performed in the first space S1, but the curing treatment may be performed, for example, in a hardening treatment chamber disposed adjacent to the first space S1. good. In this case, the mask member 16 may be disposed in the curing processing chamber, or may be configured so that the liquid film L1 is further patterned by the mask member 16 in the curing processing chamber.

In addition, in the above embodiment, an ultraviolet curable resin has been described as an example of the energy ray curing resin, but the present invention is not limited thereto, and other resin materials capable of curing by irradiation of other energy rays such as electron beams or infrared rays may be used.

1: film forming device
10: chamber
13: gas supply
14: investigator
15: stage
16: mask member
G: raw gas
L1: evil film
L2: resin layer
W: substrate

Claims (8)

In a chamber maintained in a reduced pressure atmosphere, the substrate is cooled to below the first temperature,
A raw material gas containing an ultraviolet curable resin and capable of being liquefied below the first temperature is supplied from a gas supply unit composed of a material that transmits ultraviolet light to the surface of the substrate to form a liquid film of the raw material gas,
A mask member made of a material that is maintained at a second temperature higher than the first temperature, has a predetermined opening pattern, and does not transmit ultraviolet rays is disposed opposite the surface of the substrate, and radiant heat from the mask member and the Evaporating and patterning the liquid film directly under the mask member by a reduced pressure atmosphere,
A film forming method wherein ultraviolet rays are irradiated to the surface of the substrate through the gas supply unit. The method of claim 1,
The step of arranging the mask member includes forming a liquid film containing the ultraviolet curable resin on the surface of the substrate by supplying the source gas to the surface of the substrate, and then bringing the mask member close to the surface of the substrate, How to form a film. The method of claim 1,
In the step of supplying the source gas, after disposing the mask member at a position separated from the surface of the substrate, the source gas is supplied to the surface of the substrate through the opening pattern. The method of claim 1,
The step of disposing the mask member may include moving the mask member from a position separated by a first distance from the surface of the substrate to a position separated by a second distance shorter than the first distance from the surface of the substrate. A film forming method comprising moving. The method according to any one of claims 1 to 4,
The film formation method further comprising a step of heating the mask member to the second temperature by a heating source provided in the chamber before disposing the mask member to face the surface of the substrate. The method of claim 5,
The gas supply unit is formed of a shower head disposed inside the chamber and having the heating source,
The film forming method, wherein the mask member is heated by radiant heat or heat conduction from the shower head. The method according to any one of claims 1 to 4,
The film forming method, further comprising a step of heating the mask member to the second temperature by a heating element included in the mask member before disposing the mask member to face the surface of the substrate. A chamber having a first space part and a second space part, and capable of maintaining the first space part in a reduced pressure atmosphere,
A stage disposed in the first space, having a support surface for supporting a substrate and a cooling source capable of cooling the support surface to a first temperature or less,
An ultraviolet-curable resin composed of a material that is disposed opposite the stage, has a heating unit capable of maintaining a second temperature higher than the first temperature, partitions the first space part and the second space part, and transmits ultraviolet rays. A gas supply unit capable of forming a liquid film of the liquefied source gas by supplying a source gas capable of being liquefied below the first temperature to the substrate on the support surface,
A mask member capable of maintaining the second temperature, having a predetermined opening pattern, disposed opposite to the support surface, and made of a material that does not transmit ultraviolet rays to evaporate the liquid film by radiant heat and the reduced pressure atmosphere ,
A mask movement mechanism capable of moving the marks member between a first position in which the mask member is close to the gas supply unit and a second position in which the mask member is close to the substrate on the support surface, and
An irradiation source disposed in the second space and capable of irradiating ultraviolet rays for curing the ultraviolet curing resin toward the support surface through the gas supply unit
A film forming apparatus comprising a.

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