KR20170130535A - Film forming method and film forming apparatus - Google Patents

Abstract

A film forming method and a film forming apparatus capable of stably forming a resin layer having desired film quality and pattern shape are provided. A film forming method according to an aspect of the present invention includes cooling a substrate W to a first temperature or lower in a chamber maintained in a reduced pressure atmosphere and supplying a raw material gas G Is supplied from the gas supply unit 13 to the surface of the substrate W and a mask member 16 held at a second temperature higher than the first temperature and having a predetermined opening pattern is provided on the surface of the substrate W And the surface of the substrate W is irradiated with an energy ray.

Description

Film forming method and film forming apparatus

The present invention relates to a film forming method and a film forming apparatus for patterning and forming a resin layer made of an energy ray curable resin.

A method of forming a resin layer made of an energy ray curable resin such as an ultraviolet ray hardening resin on a substrate is known. For example, Patent Document 1 discloses a method of forming a resin layer by condensing a raw material gas containing an ultraviolet ray hardening resin on a surface of a substrate cooled at a predetermined temperature, and then curing the resin layer by ultraviolet irradiation have. Patent Document 1 discloses a method of forming a pattern of an ultraviolet-curable resin layer by disposing a mask capable of shielding a non-film-forming area on a substrate (see paragraph [0045] of Patent Document 1).

Prior art literature

Patent literature

Patent Document 1: JP-A-2013-64187

However, in the case of ordinary mask film formation, the source gas adheres to the mask. Therefore, when the mask is cooled together with the substrate, the raw material gas condenses on the mask, and the energy ray curable resin in the raw material gas is deposited on the mask by the subsequent ultraviolet irradiation. It is said that if the amount of the film to be adhered to the mask increases by repeating this phenomenon, the degree of the shape of the opening pattern of the mask is lowered or particles are generated, and it becomes difficult to stably form a resin layer having a desired film quality and pattern shape there is a problem.

SUMMARY OF THE INVENTION In view of the above, it is an object of the present invention to provide a film formation method and a film formation apparatus capable of stably forming a resin layer having a desired film quality and pattern shape.

In order to achieve the above object, a film forming method according to an aspect of the present invention includes cooling a substrate to a first temperature or lower in a chamber maintained in a reduced-pressure atmosphere.

A raw material gas containing an energy ray hardening resin and capable of liquefying at a temperature below the first temperature is supplied from the gas supply section to the surface of the substrate.

A mask member, which is maintained at a second temperature higher than the first temperature and has a predetermined opening pattern, is arranged to face the surface of the substrate.

The surface of the substrate is irradiated with an energy ray.

In the film forming method, the raw material gas is condensed by contact with the substrate surface cooled to the first temperature or lower, thereby forming a liquid film containing the energy ray hardening resin on the surface of the substrate. On the other hand, since the mask member disposed opposite to the surface of the substrate is maintained at the temperature (second temperature) at which the source gas can evaporate, the region of the liquid film on the substrate, which is shielded by the mask member, And evaporated (regenerated) by radiant heat or reduced pressure atmosphere in the chamber. Thus, the liquid film is patterned to correspond to the shape of the opening pattern. Thereafter, the cured resin layer of the energy ray curable resin is formed on the substrate by the irradiation of the energy ray.

Further, since the mask member is maintained at the second temperature, condensation of the raw material gas to the mask member is prevented, and consequently, the film on the mask member of the energy ray hardening resin in the raw material gas is prevented. As a result, the degree of the shape of the opening pattern of the mask member can be maintained, and generation of particles due to removal of the coating film from the mask member can be prevented. Therefore, according to the film forming method, a resin layer having a desired film quality and pattern shape can be stably formed.

The method of holding the mask member at the second temperature is not particularly limited. For example, the mask member may be heated to the second temperature by a radiant heat or a heat conduction path from an appropriate heating source provided in the chamber, The mask member may be heated so as not to lower the temperature.

Alternatively, the mask member may be heated to self-heating and held at the second temperature, for example, by inserting a heater in the mask member or constituting the mask member with a resistance heating member.

When the second temperature is near the room temperature, the mask member may be maintained at the second temperature by setting the mutual positional relationship so that the mask member does not contact the substrate cooled to the first temperature.

The arrangement of the mask member with respect to the substrate surface may be performed either before the liquid film of the energy ray hardening resin is formed on the substrate surface or after the liquid film is formed. The opposing distance of the mask member to the substrate surface is also not particularly limited. Typically, the mask member is disposed close to the substrate surface. In this case, the distance between the mask member and the surface of the substrate may be fixed or variable.

For example, the step of disposing the mask member may include forming a liquid film including the energy ray hardening resin on the surface of the substrate by supplying the source gas to the surface of the substrate, It may be brought close to the surface.

Alternatively, the step of supplying the source gas may be performed by disposing the mask member at a position spaced apart from the surface of the substrate, and then supplying the source gas to the surface of the substrate through the opening pattern.

Alternatively, the step of disposing the mask member may include a step of separating the mask member from the surface of the substrate by a first distance, and separating the mask member from the surface of the substrate by a second distance shorter than the first distance To a position.

Also, the second distance may be zero.

The film forming method may further include a step of heating the mask member to the second temperature by a heating source provided in the chamber before the mask member is disposed to face the surface of the substrate.

In this case, the gas supply unit may be constituted by a showerhead disposed inside the chamber and having the heating source, and the mask member may be heated by radiant heat or heat conduction from the showerhead.

Alternatively, the film forming method may further include a step of heating the mask member to the second temperature by a heating element of the mask member before the mask member is disposed to face the surface of the substrate.

On the other hand, a deposition apparatus according to an aspect of the present invention includes a chamber, a stage, a gas supply unit, a mask member, and an irradiation source.

The chamber is configured to be capable of maintaining a reduced-pressure atmosphere.

The stage has a support surface for supporting the substrate and a cooling source capable of cooling the support surface to a first temperature or lower, and is disposed inside the chamber.

The gas supply unit is configured to be capable of supplying a raw material gas disposed opposite to the stage and including an energy ray hardening resin and capable of liquefying below the first temperature to the substrate on the support surface.

The mask member is capable of maintaining a second temperature higher than the first temperature, has a predetermined opening pattern, and is arranged to face the support surface.

The irradiation source is configured to irradiate an energy ray for curing the energy ray curable resin toward the support surface.

As described above, according to the present invention, a resin layer having a desired film quality and pattern shape can be stably formed.

1 is a cross-sectional view schematically showing a film forming apparatus according to an embodiment of the present invention.
2 is a schematic plan view of the mask member in the film forming apparatus.
3 is a schematic side cross-sectional view of a principal part of a film forming apparatus showing an example of a film forming method according to the present embodiment.
4 is a schematic side cross-sectional view of a principal part of a film forming apparatus showing an example of a film forming method according to a comparative example.
5 is a schematic side cross-sectional view of a principal part of a film forming apparatus showing another example of a film forming method according to the present embodiment.
6 is a schematic side cross-sectional view of a principal part of a film forming apparatus showing still another example of the film forming method according to the present embodiment.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

1 is a cross-sectional view schematically showing a film forming apparatus according to an embodiment of the present invention.

In the drawing, the X axis, the Y axis, and the Z axis represent mutually orthogonal three axial directions, respectively. The X axis and the Y axis correspond to the horizontal direction and the Z axis corresponds to the height direction, respectively.

[Film forming apparatus]

The film forming apparatus 1 of the present embodiment has a chamber 10, a gas supply unit 13, an irradiation source 14, a stage 15, and a mask member 16.

The film forming apparatus 1 supplies raw material gas containing an ultraviolet ray hardening resin (hereinafter also referred to as UV hardening resin) as an energy ray hardening resin to the surface of a substrate W supported by a stage 15, It is possible to form a liquid film composed of a condensate of gas on the surface of the substrate W. The film forming apparatus 1 irradiates ultraviolet rays as energy rays from the irradiation source 14 onto the surface of the substrate W through the mask member 16 to form an ultraviolet curable water So that it is possible to form a ground layer.

As the substrate W, various substrates such as a glass plate, a ceramic plate, a semiconductor wafer and the like on which the ultraviolet cured resin layer is to be formed are used. The shape of the substrate is not particularly limited, and may be a rectangle or a circle. On the surface of the substrate W, various functional elements covered with the ultraviolet curing resin layer may be provided.

Hereinafter, the details of each part of the film forming apparatus 1 will be described.

(chamber)

The chamber 10 has a divided structure of the first chamber body 11 and the second chamber body 12. The first chamber main body 11 and the second chamber main body 12 are interconnected via a partition wall 101 (gas supply portion 13) parallel to the XY plane, A first space S1 is defined inside the second chamber body 11 and a second space S2 is defined inside the second chamber body 12. [

The first space portion S1 is connected to the vacuum evacuation system 19 and is configured to be evacuated to a predetermined reduced pressure atmosphere by the vacuum evacuation system 19. [ The degree of vacuum at this time is not particularly limited, and is considered to be, for example, 10 ^-3 to 500 Pa. The first space S1 is held in the predetermined reduced-pressure atmosphere by being subjected to an exhaust action by the vacuum exhaust system 19 during the film forming process of the substrate W.

On the other hand, the second space S2 is maintained at an atmospheric pressure, and the irradiation source 14 described later is disposed in the second space S2.

(stage)

The stage 15 is installed in the first space portion S1 of the chamber 10. [ The stage 15 has a support surface 151 capable of supporting the substrate W. In this embodiment, the support surface 151 is formed parallel to the XY plane so as to face the partition wall 101. [ The support surface 151 has a larger area than the substrate W and its shape is not particularly limited and may be circular or rectangular.

The stage 15 is attached to the first chamber body 11 through a seal mechanism or the like not shown and is connected to a refrigerant supply source 152 provided outside the chamber 10. In the interior of the stage 15, there is provided a circulation flow passage through which the refrigerant supplied from the refrigerant supply source 152 as a cooling source passes. The coolant supply source 152 is configured to cool the support surface 151 so that the entire surface of the substrate W can be maintained at a predetermined temperature (first temperature) or lower.

The first temperature is considered to be the temperature at which the raw material gas supplied from the gas supply unit 13, which will be described later, is condensed and liquefied in the first chamber body 11. The first temperature is appropriately set according to the kind of the energy ray curable resin constituting the raw material gas, and in the case of the acrylic resin, it is typically set at a temperature below the room temperature (for example, 0 DEG C).

The stage 15 may be configured so as to be able to move up or down along the Z-axis direction within the first chamber body 11 or to rotate around the Z-axis. It is also possible to adjust the distance between the substrate W and the mask member 16 by moving the stage 15 up and down.

(Gas supply unit)

The gas supply part 13 has a structure of a gas head formed integrally with the partition wall 101. The entire gas supply part 13 is made of a material (for example, quartz glass) capable of transmitting ultraviolet rays.

The gas supply unit 13 is formed with an internal space 130 connected to the gas supply line 100. The gas supply unit 13 for supplying the raw material gas introduced into the internal space 130 toward the support surface 151 of the stage 15 is provided on the bottom surface of the gas supply unit 13 which faces the first space S1. A plurality of gas supply holes (holes) 131 are provided. Thus, the gas supply unit 13 is configured as a showerhead for supplying the source gas toward the substrate W on the support surface 151. [

The gas supply unit 13 has a heating unit 132 capable of maintaining the internal space 130 and the plurality of gas supply holes 131 at a temperature (second temperature) higher than the first temperature. The heating portion 132 is formed by embedding resistive heating wire made of carbon or the like, for example, on the bottom surface of the gas supply portion 13.

The heating section 132 also has a function as a heating source for heating the mask member 16 to the second temperature over its entire surface as described later.

The second temperature is considered to be a temperature that can prevent condensation of the source gas introduced into the inner space 130. The second temperature is appropriately set in accordance with the kind of the energy ray curable resin constituting the raw material gas, and in the case of acrylic resin, it is typically set to a temperature higher than the room temperature (for example, 30 DEG C).

The gas supply line 100 has a resin material supply line 110 and a vaporizer 120.

The resin material supply line 110 includes a tank 111 containing a liquid UV curable resin and a pipe 112 conveying the UV cured resin from the tank 111 to the vaporizer 120. As the UV curable resin, an acrylic resin material is used in the present embodiment, but it is not limited thereto. As a method of transporting the UV cured resin from the tank 111 to the vaporizer 120, for example, a pressurization using a carrier gas composed of an inert gas can be given. The pipe 112 may be provided with a flow rate adjusting valve V1 or the like.

The vaporizer 120 is configured to vaporize the UV curable resin conveyed through the pipe 112 and to generate a raw material gas containing the UV curable resin. The vaporizer 120 is configured to generate a raw material gas by heating and evaporating the UV curable resin with a heating mechanism (not shown). The raw material gas generated by the vaporizer 120 is introduced into the internal space 130 of the gas supply unit 13 through the pipe 121. At this time, the flow rate of the raw material gas introduced into the gas supply unit 13 is controlled by the flow rate control valve V2 attached to the pipe 121. In addition, the pipe 121 is temperature-adjusted so that the vaporization state of the raw material gas can be maintained by a heating mechanism (not shown).

(Investigator)

The irradiation source 14 is disposed in the second space portion S2 of the chamber 10 and irradiates ultraviolet rays toward the support surface 151 of the stage 15 through the partition 101 (gas supply portion 13) . The irradiation source 14 has, for example, an ultraviolet light source composed of a plurality of ultraviolet lamps or the like.

(Mask member)

The mask member 16 is disposed in the first space S1 of the chamber 10. In the present embodiment, a mask moving mechanism (not shown) Axis direction, the X-axis direction, the Y-axis direction, the Z-axis direction, and the Z-axis direction.

Fig. 2 is a schematic plan view of the mask member 16. Fig.

The mask member 16 is typically made of a non-transparent material (a material that does not transmit ultraviolet rays) against ultraviolet rays such as a metal material. The mask member 16 is formed to have a size capable of covering the surface of the substrate W. The shape of the mask member 16 can be arbitrarily selected in accordance with the shape of the substrate W. [

The mask member 16 is configured to be able to maintain the second temperature. Typically, the mask member 16 is configured such that it can be heated or heated by radiant heat or heat conduction from an appropriate source of heat (e.g., the heating portion 132 of the gas supply 13) within the chamber 10 do.

Alternatively, the mask member 16 may be provided with a heating element such as resistance heating wire, or the mask member 16 may be formed with a heating element. In this case, since the mask member 16 itself can be heated by energization, the mask member 16 can be maintained at a predetermined temperature for a long period of time.

The mask member 16 has an opening pattern 16 P for forming a resin layer of a desired patterning shape. The opening pattern 16 P is composed of a plurality of openings 160, and the shapes of the openings 160 are not limited to the same, and the shape is not limited to a rectangular shape. The mask member 16 has a function of limiting the ultraviolet ray irradiation area to the substrate W when the ultraviolet ray is irradiated from the irradiation source 14 to the substrate W on the support surface 151. [

When the substrate W is irradiated with ultraviolet light, the mask member 16 may be moved to a position where it does not cover the substrate W. [

The mask member 16 is configured to be movable in the first space S1 through the mask moving mechanism. As a result, alignment with respect to the substrate W on the support surface 151 is made possible, and the distance in the Z-axis direction with respect to the substrate W is changeable.

Particularly, in the present embodiment, the mask member 16 has a position (first position) close to the bottom surface of the gas supply unit 13 as indicated by the two-dot chain line in Fig. 1, And a position (second position) close to the substrate W on the substrate 151 in the Z-axis direction. The mask moving mechanism may be configured to be capable of stopping the mask member 16 at an arbitrary position between the first position and the second position.

The first position is set to a position where the gas can be heated to the second temperature by the radiant heat from the heating unit 132 of the gas supply unit 13. [ The mask member 16 may be subjected to an appropriate surface treatment for efficiently absorbing radiant heat from the heating unit 132. [

The first position may be a position where the mask member 16 contacts the bottom surface of the gas supply unit 13. [ In this case, the mask member 16 can be heated to the second temperature by the heat conduction from the heating unit 132 of the gas supply unit 13. [

On the other hand, the second position is a position where it is possible to evaporate (vaporize) the liquid film formed of the condensate of the raw material gas formed on the surface of the substrate W by the radiant heat from the mask member 16 heated to the second temperature Respectively. The opposing distance of the mask member 16 from the substrate surface at this time is set to, for example, several mm to several cm.

The opposite distance may be zero. In this case, the mask member 16 and the substrate W come into contact with each other.

The film forming apparatus 1 is characterized in that the mask member 16 is placed close to the substrate W before or after the liquid film of the raw material gas is formed on the surface of the substrate W on the stage 15, The liquid film on the substrate W coated with the mask 16 is evaporated by the radiant heat from the mask member 16. Thereafter, the film forming apparatus 1 irradiates ultraviolet rays onto the surface of the substrate W from the irradiation source 14 through the opening pattern 16 P of the mask member 16 to cure the remaining liquid film, A resin layer having a predetermined shape is formed on the substrate W.

[How to deposit]

Hereinafter, a film forming method using the film forming apparatus 1 configured as described above will be described.

(Film formation example 1)

3A to 3C are schematic side cross-sectional views of a main portion of a film forming apparatus 1 showing an example of a film forming method according to the present embodiment.

Prior to the start of film formation, the mask member 16 is in a first position close to the gas supply unit 13 as shown in Fig. 3A, and the gas supply unit 13 and the heating unit 132 (Liquefied) of the raw material gas by the above-mentioned heat exchanger (not shown). On the other hand, the first space S1 of the chamber 10 is maintained in a predetermined reduced-pressure atmosphere, and the substrate W on the stage 15 is cooled to the first temperature necessary for condensing (liquefying) .

In this state, the raw material gas G introduced into the gas supply unit 13 through the gas supply line 100 is supplied to the inner space 130 and the plurality of gas supply holes 131, To the surface of the substrate W on the stage 15. [ The raw gas G is condensed by the contact with the surface of the substrate W held at the first temperature and the liquid film L1 is formed on the surface of the substrate W.

At this time, the mask member 16 is disposed at a position where it can be in contact with the source gas G supplied from the gas supply unit 13, but as described above, the mask member 16 is maintained at the second temperature Condensation of the raw material gas G on the mask member 16 is prevented. Thus, the masking of the energy ray hardening resin in the raw material gas to the mask member 16 is prevented.

Since the mask member 16 is disposed between the gas supply unit 13 and the substrate W on the stage 15, it is possible to prevent the shielding structure from being supplied to the surface of the substrate W of the source gas G The distance between the mask member 16 and the substrate W is adjusted so that the raw material gas G rotates to the area opposed to the mask member 16 on the surface of the substrate W, , The liquid film L1 is formed in a substantially uniform thickness over the entire surface of the substrate W, so that there is no problem of film formation. It is also possible to expect wettability on the surface of the substrate W of the liquid film L1 depending on the type of the energy ray curable resin to be used and the surface of the substrate to be used and to form a liquid film L1 having a more uniform thickness Lt; / RTI >

Further, depending on the kind of the energy ray curable resin to be used, the surface property of the substrate, and the like, sufficient wettability of the liquid film may not be expected. In this case, during the film formation, the mask member 16 may be placed in a position of the gas supply unit 13 at a position directly below. The heating of the mask member 16 at that time may be performed by separately providing a heat source in the atmospheric space and heating the mask member 16 to the second temperature with the heat source.

Next, as shown in Fig. 3B, the mask member 16 is moved from the first position toward the second position. The area of a part of the liquid film L1 on the substrate W (area facing the mask member 16) is evaporated (regenerated) by radiant heat from the mask member 16, .

At this time, the supply of the raw material gas G from the gas supply unit 13 may be stopped or may be continued. Even in the case where the supply of the raw material gas G is continued, the region of the liquid film L1 that is shielded by the mask member 16 is evaporated efficiently by the radiant heat and the reduced-pressure atmosphere. The area of the liquid film L1 opposed to the opening portion 160 (opening pattern 16 P) of the mask member 16 is set so that the area of the liquid film L1 opposed to the opening portion 160 It is possible to maintain a larger film thickness, so that the subsequent liquid film L1 can be easily patterned.

When the mask member 16 reaches the second position, the evaporation action by the radiant heat from the mask member 16 is promoted by the proximity of the mask member 16 to the liquid film L1 on the substrate W, , And the opening pattern 16P. At this time, the supply of the raw material gas G from the gas supply unit 13 may be stopped or continued.

At this time, since the liquid film returning directly under the mask member 16 is efficiently removed by the radiation heat of the mask member 16, a change in the pattern shape of the liquid film L1 is suppressed. The pattern shape of the liquid film L1 is not matched with the size of each opening portion 160 because the pattern of the liquid film L1 may be subjected to heat radiation from the inner circumferential surface of the opening portion 160 of the mask member 16, And becomes slightly smaller than the opening 160.

3C, the supply of the raw material gas G is stopped, and ultraviolet rays UV are irradiated from the irradiation source 14 onto the substrate W. As a result, the liquid film 14 exposed from the opening pattern 16P The resin layer L1 is hardened, whereby the resin layer L2 having a predetermined shape is formed on the substrate W.

Since ultraviolet rays UV are irradiated to the surface of the substrate W through the mask member 16, curing of the area of the liquid film L1 that is shielded by the mask member 16 is prevented. Thus, even if the radiant heat from the mask member 16 is insufficient, for example, the uncured liquid film area, which is evaporated by the reduced-pressure atmosphere and is shielded by the mask member 16, It is reliably removed from the image. Therefore, it is possible to stably form the resin layer L2 of a predetermined shape on the substrate W without heating the mask member 16 more than necessary.

Thereafter, the mask member 16 is moved from the second position to the first position shown in Fig. 3A, and the substrate W on the stage 15 is taken out of the chamber 10 to be transferred to the new substrate W are carried onto the stage 15 from the outside of the chamber 10. Subsequently, the same process as described above is repeated to perform a film forming process on the substrate.

4 is a schematic side cross-sectional view for explaining a comparative example in which a mask M is disposed on a substrate W and a film is formed.

4, when the mask member M is directly provided on the surface of the substrate W cooled to a temperature at which the raw material gas G can be condensed, since the mask member M is also cooled similarly to the surface of the substrate W A liquid film L1 composed of a condensate of the raw material gas G is also formed on the surface of the mask member M.

Therefore, the energy ray hardening resin in the raw material gas is adhered to the mask member M by the subsequent ultraviolet ray irradiation. If the amount of film deposition on the mask member M increases due to repetition of this phenomenon, it is difficult to stably form a resin layer having a desired film quality and pattern shape due to the lowering of the degree of mask (degree of opening shape) .

On the other hand, according to the present embodiment, since the mask member 16 is maintained at a temperature (second temperature) at which condensation of the raw material gas G can be prevented, the raw material gas G Is prevented from being condensed, and consequently, the coating of the UV curable resin in the raw material gas G onto the mask member 16 is prevented. As a result, the shape of the opening pattern 16 P of the mask member 16 can be maintained, and generation of particles due to removal of the coating film from the mask member 16 is prevented. Therefore, according to the present embodiment, it is possible to stably form a resin layer having a desired film quality and pattern shape.

(Film formation example 2)

5 is a schematic side cross-sectional view of the recess of the film forming apparatus 1 showing another example of the film forming method according to the present embodiment.

This film forming example 2 is different from the film forming example 1 in that the opposing position of the mask member 16 with respect to the substrate W on the stage 15 is fixed at the second position. That is, in this example, the position of the mask member 16 is fixed during the curing process of the liquid film L1 by ultraviolet irradiation from the film forming process of the liquid film L1 on the substrate W. With this method, it is also possible to obtain the same operational effects as in the above-mentioned film forming method 1.

Since the mask member 16 is disposed at a position close to the surface of the substrate W in the present example, the raw material gas G is supplied onto the substrate W through the opening pattern 16 P of the mask member 16, Lt; / RTI > In this case, although the liquid film L1 in which the raw material gas G is condensed may get wet in the gap between the mask member 16 and the substrate W, the liquid film L1 returning directly under the mask member 16 , The liquid film L1 is not present directly under the mask member 16 because it is efficiently removed by the radiation heat of the mask member 16. [ As a result, the liquid film L1 having the shape corresponding to the opening pattern 16 P of the mask member 16 is directly formed on the substrate W. This makes it possible to quickly form the liquid film L1 having a predetermined shape in comparison with the case where the liquid film L1 is patterned by bringing the mask member 16 close to the substrate W in a subsequent step. As a result, the processing time can be shortened and the throughput can be improved.

Further, in this example, the heat treatment of the mask member 16 to the second temperature can be performed, for example, when the substrate W is carried in and out. The heating source in this case may be the heating unit 132 of the gas supply unit 13, or may be a heating source provided separately in the chamber 10, similarly to the film formation example 1.

Alternatively, when the mask member 16 is provided with a heating element, the mask member 16 is heated to the second temperature by the heating element before the mask member 16 is arranged to face the surface of the substrate W .

(Film Formation Example 3)

6A to 6C are schematic cross-sectional side views of the main parts of the film forming apparatus 1 showing still another example of the film forming method according to the present embodiment.

This film forming example 3 is different from the film forming example 1 in that a plurality of proximate positions of the mask member 16 with respect to the substrate W exist in the liquid film L1 formation and patterning step on the substrate W . That is, in the present example, the mask member 16 is located at a position (third position) separated by a first distance from the surface of the substrate W at the time of forming the liquid film L1, (Second position) apart from the surface of the substrate W by a second distance shorter than the first distance.

6A, the region of the liquid film L1 on the substrate W, which is shielded by the mask member 16, is evaporated by radiant heat from the mask member 16, for example, Is set to the triggered position.

6A, the mask member 16 is disposed at the third position and is filled with the raw material gas G through the opening pattern 16 P of the mask member 16, Is supplied onto the substrate W. 6 (B), the mask member 16 moves from the third position to the second position, and the liquid film L1 shielded by the mask member 16 ) Is evaporated. Further, at the time of patterning the liquid film L1, the supply of the raw material gas G may be stopped or continued, similarly to the film forming example 1.

6 (C), the supply of the source gas G is stopped and ultraviolet rays UV are irradiated from the irradiation source 14 onto the substrate W, whereby the liquid film exposed from the opening pattern 16 P L1 are hardened, whereby a resin layer L2 of a predetermined shape is formed on the substrate W.

In this example as well, the same effects as those of the film forming example 1 can be obtained. The liquid film L1 having the shape corresponding to the opening pattern 16 P of the mask member 16 is formed on the surface of the substrate 16, (W). Since the distance from the substrate W is larger than the second position, the temperature rise of the substrate W due to the radiation heat of the mask member 16 is suppressed, The condensation efficiency of the liquid film L1 can be increased and the liquid film L1 can be efficiently formed.

Also in this example, the heat treatment of the mask member 16 to the second temperature can be performed, for example, when the substrate W is carried in and out. The heating source in this case may be the heating unit 132 of the gas supply unit 13, or may be a heating source provided separately in the chamber 10, similarly to the film formation example 1.

Alternatively, when the mask member 16 is provided with a heating element, the mask member 16 is heated to the second temperature by the heating element before the mask member 16 is arranged to face the surface of the substrate W .

Although the embodiment of the present invention has been described above, it is needless to say that the present invention is not limited to the above-described embodiment, but may be modified in various ways.

For example, in the above embodiment, in order to maintain the mask member 16 at the second temperature, the mask member 16 is moved by the radiant heat or the heat conduction from the gas supply unit 13 (the heating unit 132) 2 < / RTI > temperature. On the other hand, when the liquefying temperature (first temperature) of the raw material gas is 0 DEG C or lower, the second temperature can be set to be close to the room temperature. Thus, the heating operation of the mask member 16 as described above is not required , It is possible to maintain the mask member 16 at the second temperature. Therefore, the heating source for heating the mask member 16 may be omitted depending on the kind of the raw material gas.

Alternatively, a temperature sensor capable of detecting the temperature of the mask member 16 may be mounted on the mask member 16, and the temperature of the mask member 16 may be monitored based on the output of the temperature sensor, The mask member 16 may be heated to the second temperature by using a heating source such as the gas supply unit 13 when the temperature is lower than the predetermined temperature.

In the above embodiment, the mask member 16 is disposed in the first space S1 of the chamber 10. However, the present invention is not limited to this, and a waiting chamber capable of waiting the mask member 16 may be provided, It may be provided adjacent to the first space S1. In this case, a heating source capable of heating the mask member 16 to the second temperature may be provided in the waiting chamber.

Although the curing process of the liquid film L1 is performed in the first space S1 in the above embodiment, the curing process may be performed, for example, in the curing chamber disposed adjacent to the first space S1 good. In this case, the mask member 16 may be arranged in the curing treatment chamber, and the liquid film L1 may be further patterned by the mask member 16 in the curing treatment chamber.

In the above embodiments, an ultraviolet ray hardening resin has been described as an example of the energy ray hardening resin. However, the present invention is not limited to this, and other resin materials that can be cured by irradiation with another energy ray such as an electron beam or an infrared ray may be used.

1: Deposition device
10: chamber
13: gas supply part
14: Investigator
15: stage
16: mask member
G: Raw material gas
L1: liquid film
L2: resin layer
W: substrate

Claims (8)

In a chamber maintained in a reduced-pressure atmosphere, the substrate is cooled to a first temperature or lower,
Supplying a raw material gas containing an energy ray hardening resin and capable of liquefying below the first temperature from a gas supply section to the surface of the substrate,
A mask member held at a second temperature higher than the first temperature and having a predetermined opening pattern so as to face the surface of the substrate,
And the surface of the substrate is irradiated with an energy ray. The method according to claim 1,
The step of disposing the mask member may include forming a liquid film including the energy ray hardening resin on the surface of the substrate by supplying the raw material gas to the surface of the substrate and then bringing the mask member close to the surface of the substrate , A film forming method. The method according to claim 1,
Wherein the step of supplying the source gas comprises the step of disposing the mask member at a position spaced apart from the surface of the substrate and then supplying the source gas to the surface of the substrate through the opening pattern. The method according to claim 1,
Wherein the step of disposing the mask member is a step of disposing the mask member at a position separated by a first distance from the surface of the substrate by a second distance shorter than the first distance from the surface of the substrate Wherein the method further comprises: 5. The method according to any one of claims 1 to 4,
Further comprising a step of heating the mask member to the second temperature by a heating source provided in the chamber before the mask member is disposed to face the surface of the substrate. 6. The method of claim 5,
Wherein the gas supply part is constituted by a shower head disposed inside the chamber and having the heating source,
Wherein the mask member is heated by radiant heat or heat conduction from the showerhead. 5. The method according to any one of claims 1 to 4,
Further comprising a step of heating the mask member to the second temperature by a heating element of the mask member before the mask member is disposed to face the surface of the substrate. A chamber capable of maintaining a reduced-pressure atmosphere,
A stage having a support surface for supporting the substrate and a cooling source capable of cooling the support surface to a first temperature or lower,
A gas supply unit disposed opposite to the stage and including an energy ray hardening resin and capable of supplying a source gas capable of liquefying below the first temperature to the substrate on the support surface,
A mask member capable of maintaining a second temperature higher than the first temperature and having a predetermined opening pattern and disposed to face the support surface,
An energy ray for curing the energy ray hardening resin is irradiated toward the support surface,
The film forming apparatus comprising:

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