JP5560325B2 - Vacuum processing apparatus and low dielectric constant film manufacturing apparatus - Google Patents

Description

The present invention relates to a vacuum processing equipment to perform processing in the processing chamber in a vacuum state. The present invention also relates to a low dielectric constant film production apparatus for producing a low dielectric constant film using a vacuum processing apparatus.

  While miniaturization of semiconductor elements is progressing, it is necessary to suppress signal transmission delay and increase in power consumption. For this reason, it is indispensable to lower the dielectric constant of the interlayer insulating film material that supports the wiring and to reduce the capacitance between the wirings.

  As a technology for producing a low dielectric constant film, an interlayer insulating film material (low dielectric constant material: Low-k material) is applied to a substrate in a liquid state by a spin coater, and the substrate is heated and applied to the low dielectric constant material. It is known that a low dielectric constant film having sufficient mechanical strength is produced on a substrate by irradiating with ultraviolet rays (UV) and cured (cured) (see, for example, Patent Document 1). In addition, a low dielectric constant film with sufficient mechanical strength is obtained by depositing a low dielectric constant film on the substrate using a CVD device, heating the substrate, and curing (curing) the deposited low dielectric constant film by irradiating ultraviolet rays (UV). It is known to produce a rate film on a substrate (see, for example, Patent Document 2).

  In the case of producing a low dielectric constant film, a process of heating the substrate and irradiating the low dielectric constant material (low dielectric constant film) with ultraviolet rays (UV) to be cured is performed. This step is performed by a vacuum processing apparatus having a mechanism for heating the substrate and a mechanism for irradiating ultraviolet rays (UV). A vacuum processing apparatus that cures (cures) a low dielectric constant film includes a heating unit that heats a substrate and an ultraviolet irradiation unit that irradiates ultraviolet rays (UV) in a processing chamber.

  As the heating means, a plate for directly heating the substrate or a heater for increasing the temperature in the processing chamber is used. In addition, the ultraviolet irradiation means is installed outside the processing chamber, and an ultraviolet transmission window (quartz window) is fixed to the opening of the ceiling with respect to the metal processing chamber, and ultraviolet rays (UV) are transmitted from the quartz window to the substrate in the processing chamber. Irradiated.

  In such a vacuum processing apparatus, when curing (curing) the low dielectric constant film of the substrate, the temperature of the plate and the temperature in the processing chamber are uniformly adjusted in advance before the substrate is carried in, and the substrate support member, etc. It is necessary to keep the temperature of the jigs at a constant temperature (preheating). If preheating is performed in the absence of a substrate, the quartz window (fixed to the metal processing chamber) and external UV irradiation means will also be affected by heat, and the quartz window will have a coefficient of thermal expansion. There is a possibility that cracks may occur due to the difference between the two and heat damage to the ultraviolet irradiation means.

JP 2008-4628 A JP 2006-165573 A

  The present invention has been made in view of the above situation, and in the process of heating the substrate and applying energy from the energy source, the necessary preheating is performed without the influence of heat on the window member of the processing chamber and the energy source. An object of the present invention is to provide a vacuum processing apparatus that can perform the above process.

In addition , it is possible to provide a substrate processing method capable of performing necessary preheating while eliminating the influence of heat on the UV transmitting portion and the UV irradiation means in the processing of curing (curing) the low dielectric constant film .

  The present invention has been made in view of the above situation, and in the process of curing (curing) a low dielectric constant film, a vacuum process capable of performing the necessary preheating without the influence of heat on the processing chamber and the energy source. An object of the present invention is to provide a low dielectric constant film manufacturing apparatus provided with the apparatus.

In order to achieve the above object, a vacuum processing apparatus according to a first aspect of the present invention includes a processing chamber in which a substrate is disposed and the inside is set to a predetermined vacuum state, and a surface of the substrate provided outside the processing chamber. An energy source that provides energy to the substrate, a window member that constitutes a part of the processing chamber and transmits energy from the energy source to the inside of the processing chamber, and an interior of the processing chamber that is provided in the processing chamber and A heat source for maintaining the substrate at a predetermined temperature distribution by heating the substrate; and a blocking member provided inside the processing chamber facing the window member and blocking heat from the heat source , the energy source An ultraviolet irradiation means, wherein the window member is a quartz quartz window that transmits ultraviolet rays, and the blocking member is provided at an opposing portion of the quartz window, so that at least heat from the heat source to the quartz window is provided. The processing chamber is a cylindrical processing chamber, the quartz window is fixed as a ceiling member on the upper portion of the processing chamber, the ultraviolet irradiation means is provided on the upper side of the quartz window, and supports the substrate. A substrate support member is provided inside the processing chamber, the heat source is provided below the substrate support member, and the blocking member is formed in a disc shape and provided on an upper portion of the substrate support member. And

For this reason, when heating is performed with a heat source in the absence of the substrate, the influence of the heat on the energy source through the window member and the window member can be blocked by the blocking member, and the substrate can be heated and removed from the energy source. When applying energy, it is possible to eliminate the influence of heat on the window member of the processing chamber and the energy source and perform necessary preheating.
Further, by blocking the heat to the quartz window with the blocking member, it is possible to prevent the occurrence of cracks due to the deformation due to the thermal expansion difference between the fixed portion of the quartz window and the processing chamber.
Moreover, the influence of the heat from the heat source to the ultraviolet irradiation means through the quartz window or the quartz window can be blocked by the blocking member, and the quartz window or ultraviolet irradiation in the processing chamber is applied during the process of heating the substrate and irradiating the ultraviolet ray. It is possible to perform the necessary preheating without the influence of heat on the means. As the quartz window, for example, a rectangular shape or a disk shape is applied.

A vacuum processing apparatus according to a second aspect of the present invention is the vacuum processing apparatus according to the first aspect , wherein the heat source is lamp heating means and is provided below the substrate support member.

  For this reason, since the substrate is heated by raising the temperature inside the processing chamber using the lamp heating means, the substrate can be heated without bringing the heating means into contact with the substrate.

According to a third aspect of the present invention, there is provided the vacuum processing apparatus according to the second aspect , wherein the blocking member is formed with a circular opening at a central portion, and mainly a peripheral portion of the quartz window. It is characterized by the fact that the heat to is blocked.

  For this reason, by using a blocking member having a circular opening at the center, it is possible to reduce the influence of heat on the fixed portion at the periphery of the quartz window in the metal processing chamber, and due to the difference in thermal expansion coefficient. It is possible to prevent cracks from being generated at the periphery of the quartz window due to the deformation, and to eliminate the influence of heat on the quartz window and the ultraviolet irradiation means in the processing chamber.

The vacuum processing apparatus of the present invention according to claim 4 is the vacuum processing apparatus according to claim 2 , wherein a plurality of small holes are formed in the blocking member, and the temperature inside the processing chamber is maintained. The heat is cut off.

  For this reason, by using the blocking member in which a plurality of small holes are formed, the temperature in the processing chamber can be controlled and the influence of heat on the quartz window and the ultraviolet irradiation means in the processing chamber can be eliminated.

The vacuum processing apparatus of the present invention according to claim 5 is the vacuum processing apparatus according to any one of claims 1 to 4 , wherein a low dielectric constant film composition is formed on the substrate, The low dielectric constant film composition is cured as a low dielectric constant film by being irradiated with energy from an energy source and heated by the heat source.

  For this reason, when the low dielectric constant film composition is cured as a low dielectric constant film, it is possible to eliminate the influence of heat on the window member of the processing chamber and the energy source and perform necessary preheating.

As a vacuum processing method, a substrate coated with a low dielectric constant composition is heated and a low dielectric constant film is formed on the substrate by irradiating the low dielectric constant composition with ultraviolet rays transmitted from the outside of the processing chamber. in the substrate processing method of, except when performing the processing of the substrate, with respect to the site where the ultraviolet radiation source and the processing chamber of the ultraviolet rays transmitted through, blocking the heat in heating the inside of the processing chamber Can do.
For this reason, in the process of curing (curing) the low dielectric constant film, it becomes possible to perform the necessary preheating without the influence of heat on the ultraviolet light transmitting portion and the ultraviolet irradiation means.

  For this reason, in the process of curing (curing) the low dielectric constant composition to form a low dielectric constant film, the necessary preheating can be performed without the influence of heat on the ultraviolet transmitting portion and the ultraviolet irradiation means.

In order to achieve the above object, a low dielectric constant film manufacturing apparatus according to a sixth aspect of the present invention is a coating apparatus for applying a low dielectric constant composition to a substrate, and the low dielectric constant composition is applied by the coating apparatus. The vacuum processing apparatus according to any one of claims 1 to 5 , wherein the substrate is carried in.

  Therefore, in the process of curing (curing) the low dielectric constant film, the low dielectric constant film manufacturing apparatus provided with a vacuum processing apparatus capable of performing necessary preheating without the influence of heat on the processing chamber and the energy source. It can be.

  The vacuum processing apparatus of the present invention can perform necessary preheating without the influence of heat on the window member of the processing chamber and the energy source in the process of heating the substrate and applying energy from the energy source. .

  The low dielectric constant film manufacturing apparatus of the present invention can perform necessary preheating without the influence of heat on the processing chamber and the energy source in the process of curing (curing) the low dielectric constant film.

It is a conceptual diagram of the low dielectric constant film production apparatus of the present invention. It is sectional drawing of the vacuum processing apparatus which concerns on 1st Example of this invention. It is an external view of a blocking member. It is sectional drawing of the vacuum processing apparatus which concerns on 2nd Example of this invention. It is an external view of a blocking member. It is an external view of a blocking member. It is an external view of a blocking member. It is sectional drawing of the vacuum processing apparatus which concerns on the reference example of this invention.

  A low dielectric constant film manufacturing apparatus will be described with reference to FIG. FIG. 1 conceptually shows the overall processing flow of a low dielectric constant film manufacturing apparatus equipped with a vacuum processing apparatus of the present invention.

  As shown in the figure, a coating liquid 1 of a low dielectric constant material (Low-k material) is applied to a substrate 3 by a spin coater 2. The substrate 3 on which the coating liquid 1 is made uniform is baked at a low temperature (for example, 70 ° C. to 150 ° C.). The substrate 3 on which the low dielectric constant material is baked is transported to a single-wafer type vacuum processing apparatus 4 and irradiated with ultraviolet rays (UV) 5 while the substrate 3 is heated to a predetermined temperature (for example, 350 ° C.). Cured. Thereby, a low dielectric constant film having sufficient mechanical strength is produced on the substrate 3.

  The vacuum processing apparatus 4 for producing a low dielectric constant film on the substrate 3 will be specifically described with reference to FIGS. FIG. 2 shows a sectional view from the side of the entire vacuum processing apparatus according to the first embodiment of the present invention, and FIG.

  As shown in the figure, the vacuum processing apparatus 4 includes a cylindrical metal chamber 11 whose upper surface is open, and an opening 12 is formed in the upper portion of the chamber 11. A disc-shaped quartz window 13 is disposed in the opening 12 of the chamber 11, and the periphery of the quartz window 13 is fixed to the edge of the opening 12 at the top of the chamber 11 via an O-ring 14. A processing chamber 15 is formed by the chamber 11 and the quartz window 13, and the inside of the processing chamber 15 is exhausted to a predetermined vacuum state by a vacuum exhaust system (not shown).

  A transfer port 10 is provided on the wall surface of the chamber 11, and the substrate 3 is carried in and out via the transfer port 10. The processing chamber 15 is provided with a substrate support 16 which is a substrate support member on which the substrate 3 is placed and supported, and the substrate support 16 is provided to be movable up and down. A holding member 17 is provided on the upper surface of the substrate support 16, and the substrate 3 is regulated and held at a predetermined position by the holding member 17.

  A lamp heater 18 is provided below the substrate support 16 as a lamp heating means serving as a heat source. The lamp heater 18 heats the inside of the processing chamber 15 and the substrate 3 to maintain the substrate 3 in a predetermined temperature distribution. A reflector 19 is provided in the processing chamber 15 below the substrate support 16, and the substrate support 16, together with the lamp heater 18, is reflected from below the reflector 19 in a state avoiding the carry-in / carry-out path of the substrate 3 from the transfer port 10. Covered with

  In addition, an ultraviolet (UV) irradiation device 21 is provided above the quartz window 13, and ultraviolet (UV) 5 is transmitted from the ultraviolet (UV) irradiation device 21 through the quartz window 13 to the substrate 3 on which the low dielectric constant material is baked. (See FIG. 1).

  A support member 22 is fixed to a plurality of portions of the inner wall of the chamber 11 at the same height above the substrate support 16, and a disc-shaped blocking plate 23 serving as a blocking member is placed on the support member 22. When the processing chamber 15 is preheated, the shut-off plate 23 is carried into the processing chamber 15 through the transfer port 10, and when the processing chamber 15 is heated by the lamp heater 18, ) Heat transfer to the irradiation device 21 is blocked by the block board 23.

  The barrier 23 is made of an inexpensive material having a high heat-resistant temperature, low thermal expansibility, low specific gravity, and inexpensive, for example, ceramics such as alumina, SiC, SiN, and metals such as Ti.

  In the vacuum processing apparatus 4 described above, the substrate 3 on which the low dielectric constant material is baked by the lamp heater 18 is heated to a predetermined temperature (for example, 350 ° C.), and ultraviolet rays (UV) are emitted from the ultraviolet (UV) irradiation device 21 through the quartz window 13. The substrate 3 is irradiated with UV (5) (see FIG. 1). By irradiating with ultraviolet rays (UV) 5 (see FIG. 1), the low dielectric constant material is cured (cured), and a low dielectric constant film having sufficient mechanical strength is formed on the substrate 3.

  Prior to the processing of irradiating the substrate 3 with ultraviolet rays (UV) 5 (see FIG. 1), the temperature of the processing chamber 15 is raised by the lamp heater 18 and the jig and the processing chamber are preheated to a predetermined temperature. At this time, the blocking plate 23 is placed on the support member 22, and heat transfer to the quartz window 13 and the ultraviolet (UV) irradiation device 21 is blocked by the blocking plate 23. As a result, the quartz window 13 and the ultraviolet (UV) irradiation device 21 are not affected by the heat for heating the processing chamber 15, and the temperature of the atmosphere below the barrier 23 is kept uniform in a required state. be able to.

  When the preheating is performed, the quartz window 13 and the ultraviolet (UV) irradiation device 21 are not affected by heat, so there is no possibility of overheating, and the periphery of the quartz window 13 in the metal chamber 11 is not affected. The influence of heat on the fixed portion can be reduced, and cracks are prevented from occurring at the periphery of the quartz window 13 due to deformation due to the difference in thermal expansion coefficient. Further, the ultraviolet (UV) irradiation device 21 is not exposed to heat, and thermal damage does not occur.

  For this reason, it is possible to sufficiently perform the preheating of the processing chamber 15, and the curing (curing) processing of the low dielectric constant material can be performed efficiently. Further, since the ultraviolet (UV) irradiation device 21 is not exposed to heat, it is possible to simplify the heat countermeasures on the ultraviolet (UV) irradiation device 21 side. Since the lamp heater 18 is used as a heat source, the heat source does not come into contact with the substrate 3 and there is no possibility of contamination.

  Therefore, when the low dielectric constant composition is cured (cured) to form a low dielectric constant film, the necessary preheating is performed without affecting the quartz window 13 and the ultraviolet (UV) irradiation device 21. It becomes possible.

  A second embodiment of the vacuum processing apparatus will be described with reference to FIGS.

  FIG. 4 shows a cross-sectional view from the side of the entire vacuum processing apparatus according to the second embodiment of the present invention, and FIG. The vacuum processing apparatus of the second embodiment is different from the vacuum processing apparatus of the first embodiment in the shape of the blocking board, and therefore, the same members are denoted by the same reference numerals and redundant description is omitted.

  Support members 22 are fixed to a plurality of portions of the inner wall of the chamber 11 at the same height above the substrate support 16, and a blocking plate 26 as a blocking member is placed on the support member 22. The blocking board 26 has a disc shape and a circular opening 27 formed in the center. The barrier 26 is carried into the processing chamber 15 via the transfer port 10 when the processing chamber 15 is preheated, and when the temperature of the processing chamber 15 is raised by the lamp heater 18, the peripheral portion of the quartz window 13. The heat transfer of the (fixed portion with respect to the chamber 11) is blocked by the blocking board 26.

  When the preheating is performed, the peripheral portion of the quartz window 13 is not affected by heat, so there is no risk of overheating, and heat from the fixed portion of the peripheral portion of the quartz window 13 in the metal chamber 11 is not affected. The influence can be greatly reduced, and cracks are reliably prevented from occurring at the periphery of the quartz window 13 due to deformation due to the difference in thermal expansion coefficient. Moreover, since the opening 27 is formed in the shut-off board 26, it is possible to raise the temperature of the entire processing chamber 15 uniformly.

  For this reason, it is possible to prevent the occurrence of cracks at the periphery of the quartz window 13 and at the same time to uniformly heat the entire interior of the processing chamber 15. In the case where a heat-treated device is used as an ultraviolet (UV) irradiation device, a lightweight barrier board 26 can be provided to prevent the occurrence of cracks in the quartz window 13, and the periphery of the quartz window 13 can be provided. Preheating can be performed in a state in which the occurrence of cracks is reliably prevented.

  In the first embodiment and the second embodiment described above, the example in which the blocking plate 23 and the blocking plate 26 are mounted on the support member 22 has been described. However, the blocking plate 17 may be held by the holding member 17 of the substrate 3. . It can also be placed on the upper edge of the reflector 19.

  As shown in FIG. 6, the shape of the breaker disc can be a disc breaker 31 having a disc shape in which the outer peripheral portion is thicker than the central portion. By providing the blocking plate 31 having a thick outer peripheral portion, the influence of heat on the peripheral fixing portion of the quartz window 13 (see FIGS. 2 and 4) in the metal chamber 11 (see FIGS. 2 and 4). Can be reliably reduced, and the lower side of the barrier 31 can be uniformly heated to perform preliminary heating.

  Further, as shown in FIG. 7, the shape of the breaker can be a breaker 33 having a disk shape and having a plurality of small holes 32 formed therein. By providing the block board 33 in which the small holes 32 are formed, it is possible to perform temperature rise control of the entire atmosphere of the processing chamber 15.

A reference example of the vacuum processing apparatus will be described with reference to FIG.

FIG. 8 shows a sectional state from the side of the entire vacuum processing apparatus according to the reference example of the present invention. In addition, since the structure of the board | substrate support stand 16 differs in the vacuum processing apparatus of a reference example with respect to the vacuum processing apparatus of 1st Example and 2nd Example, the description which attaches | subjects the same code | symbol to the same member and overlaps is carried out. It is omitted.

  As shown in the figure, a substrate support 16 is provided inside the chamber 11, and the substrate support 16 is provided so as to be movable up and down. A hot plate 41 as a heat source is provided on the upper surface of the substrate support 16. The substrate 3 is directly placed on the hot plate 41, and the back surface of the substrate 3 is heated to a predetermined temperature. The lamp heater 18 (see FIGS. 2 and 4) is not provided.

Even if the vacuum processing apparatus of the reference example is a vacuum processing apparatus including the hot plate 41, the quartz window 13 and the ultraviolet (UV) irradiation apparatus 21 are not affected by heat.

Vacuum processing apparatus described above, although the low dielectric constant material on the surface by the scan Pinkota 2 has been described as an example an apparatus for processing a substrate 3 coated, low dielectric constant material is formed by deposition apparatus such as a CVD apparatus It is also possible to apply to processing of a processed substrate. Furthermore, the above-described vacuum processing apparatus is applicable not only to the process for producing the low dielectric constant film but also to the curing process for the surface of the substrate.

The present invention can be utilized in the field of vacuum processing equipment industry for performing processing in the processing chamber in a vacuum state, and a low dielectric constant film production apparatus for producing a low dielectric constant film using a vacuum processing apparatus Can be used in industrial fields.

1 Coating liquid 2 Spin coater 3 Substrate 4 Vacuum processing device 5 Ultraviolet (UV)
DESCRIPTION OF SYMBOLS 10 Transfer port 11 Chamber 12 Opening part 13 Quartz window 14 O-ring 15 Processing chamber 16 Substrate support stand 17 Holding member 18 Lamp heater 19 Reflector 21 Ultraviolet (UV) irradiation apparatus 22 Support material 23, 26, 31, 33 Blocker 27 Opening 32 Small holes 41 Hot plate

Claims (6)

A processing chamber in which the substrate is placed and the inside is in a predetermined vacuum state;
An energy source provided outside the processing chamber for applying energy to the surface of the substrate;
A window member that constitutes a part of the processing chamber and transmits energy from the energy source into the processing chamber;
A heat source provided inside the processing chamber to keep the substrate in a predetermined temperature distribution by heating the inside of the processing chamber and the substrate;
A blocking member provided inside the processing chamber facing the window member and blocking heat from the heat source,
The energy source is ultraviolet irradiation means, and the window member is a quartz window made of quartz that transmits ultraviolet rays,
The blocking member is provided at a facing portion of the quartz window to block heat from the heat source to at least the quartz window,
The processing chamber is a cylindrical processing chamber,
The quartz window is fixed to the upper part of the processing chamber as a ceiling member,
The ultraviolet irradiation means is provided on the upper side of the quartz window,
A substrate support member for supporting the substrate is provided in the processing chamber;
The heat source is provided below the substrate support member,
The vacuum processing apparatus according to claim 1, wherein the blocking member is formed in a disk shape and provided on an upper portion of the substrate support member . The vacuum processing apparatus according to claim 1 ,
The vacuum processing apparatus, wherein the heat source is lamp heating means and is provided below the substrate support member. The vacuum processing apparatus according to claim 2 ,
The vacuum processing apparatus is characterized in that a circular opening is formed in the central portion of the blocking member, and heat to the peripheral portion of the quartz window is mainly blocked. The vacuum processing apparatus according to claim 2 ,
The vacuum processing apparatus characterized in that a plurality of small holes are formed in the blocking member, and the temperature inside the processing chamber is maintained to block heat. In the vacuum processing apparatus according to any one of claims 1 to 4 ,
A low dielectric constant film composition is formed on the substrate, and the low dielectric constant film composition is cured as a low dielectric constant film by irradiation with energy from the energy source and heating by the heat source. Vacuum processing equipment. A coating apparatus for applying a low dielectric constant composition to a substrate;
A low dielectric constant film comprising the vacuum processing apparatus according to any one of claims 1 to 5 , wherein the substrate on which the low dielectric constant composition is applied by the coating apparatus is carried in. Production device.

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