WO2011145530A1 - Vacuum processing apparatus, method for processing object to be processed, and film forming apparatus - Google Patents

Vacuum processing apparatus, method for processing object to be processed, and film forming apparatus Download PDF

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Publication number
WO2011145530A1
WO2011145530A1 PCT/JP2011/061087 JP2011061087W WO2011145530A1 WO 2011145530 A1 WO2011145530 A1 WO 2011145530A1 JP 2011061087 W JP2011061087 W JP 2011061087W WO 2011145530 A1 WO2011145530 A1 WO 2011145530A1
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WO
WIPO (PCT)
Prior art keywords
vacuum processing
processing chamber
light
seal member
processing apparatus
Prior art date
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PCT/JP2011/061087
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French (fr)
Japanese (ja)
Inventor
貴久 山崎
高博 中山
正明 平川
剛 加賀美
一誠 東條
章 渡辺
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株式会社アルバック
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Priority to JP2012515867A priority Critical patent/JPWO2011145530A1/en
Publication of WO2011145530A1 publication Critical patent/WO2011145530A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67126Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps

Definitions

  • the present invention relates to a vacuum processing apparatus, a processing object processing method, and a film forming apparatus, and in particular, a vacuum processing apparatus having a sealing structure that prevents a sealing member for sealing a light transmissive partition wall from being irradiated with ultraviolet rays.
  • the present invention also relates to a processing method of a processing object using the vacuum processing apparatus, and a film forming apparatus including the vacuum processing apparatus.
  • a low dielectric constant film for example, a low-k material
  • a spin coater is applied on a processing target to form a low dielectric constant film. It is known that a low dielectric constant film having sufficient mechanical strength is produced by heating an object and irradiating the low dielectric constant film with ultraviolet rays to cure (see, for example, Patent Document 1).
  • a low dielectric constant film having a sufficient mechanical strength is obtained by depositing a low dielectric constant film on the object to be processed by a CVD apparatus, heating the object to be processed, and curing the deposited low dielectric constant film by irradiating ultraviolet rays. It is known to produce a film on a processing object (see, for example, Patent Document 2).
  • the step of irradiating and curing ultraviolet rays includes a mechanism for heating the object to be processed and a mechanism for irradiating the object to be processed in the vacuum processing chamber (ultraviolet irradiation apparatus). It is implemented using the vacuum processing apparatus provided with. Some of these ultraviolet irradiation apparatuses are installed outside the vacuum processing apparatus. In this case, an ultraviolet transmission window (for example, a quartz window) is fixedly installed in the upper opening of the vacuum processing chamber. Is irradiated onto a processing object placed in the processing chamber through the transmission window. In the case of vacuum sealing with this ultraviolet light transmitting window fixed, there are many cases where a resin sealing member is used, but there is no technology that takes into account the deterioration of the sealing member.
  • ultraviolet irradiation apparatus for example, a quartz window
  • a light transmissive partition made of quartz is used, and light is irradiated through the partition. Since this quartz is a hard and highly plastic material, it is generally not made of a hard material such as a metal gasket as a sealing member when providing a light-transmitting partition wall in a vacuum processing apparatus. A material made of a soft and elastic resin material such as a Teflon (registered trademark) ring is used. Such a seal member is often installed on the vacuum side at the upper part of the casing 11 constituting the vacuum processing apparatus as shown in FIG. 1 and below the edge of the light transmissive partition wall 12.
  • the light transmissive partition wall 12 is pressed against the resin seal member 13 and sealed.
  • 14 is a wafer support stage
  • 15 is a wafer to be processed.
  • a casing 21, a quartz window 22 installed on the top thereof, and a seal member 23 (for example, installed on the vacuum side between the quartz window 22 and the top of the casing 21 (for example, , O-ring, etc.), which is sealed in the same manner as in FIG. 1, in a quartz window from an ultraviolet irradiation device 24 such as an ultraviolet lamp installed outside the device.
  • an ultraviolet irradiation device 24 such as an ultraviolet lamp installed outside the device.
  • the ultraviolet irradiation apparatus In the vacuum processing apparatus shown in FIG. 2, if the ultraviolet irradiation apparatus is installed inside the apparatus, it is not necessary to use a quartz window. Therefore, the above problem does not occur. From the standpoint of the surface and the poor maintainability of the apparatus, the ultraviolet irradiation device is preferably installed outside the vacuum processing apparatus.
  • a blocking member 37 that partially blocks ultraviolet rays on the atmosphere side of the quartz window 32 provided on the upper portion of the housing 31. It is conceivable to provide a method in which ultraviolet rays are not irradiated to the resin seal member 33 (for example, O-ring).
  • 34 is an ultraviolet irradiation device
  • 35 is a wafer support stage
  • 36 is a wafer.
  • the ultraviolet rays passing through the quartz window 32 fall within the range of lines A and B.
  • the light intensity of the ultraviolet rays that reach the wafer 36 is reduced.
  • the housing 31 and the quartz window 32 are scaled up in order to increase the ultraviolet transmission area, the cost is increased and the thickness of the quartz window 32 needs to be increased in order to maintain sufficient strength against atmospheric pressure. There is a problem that the area to be blocked is further increased, and the light intensity of ultraviolet rays reaching the wafer 36 is further decreased.
  • An object of the present invention is to solve the above-described problems, and a vacuum processing apparatus having a sealing structure that prevents a resin seal member from receiving light irradiation such as ultraviolet irradiation, and the vacuum processing apparatus.
  • An object of the present invention is to provide a processing method of a processing object to be used and a film forming apparatus provided with the vacuum processing apparatus.
  • the vacuum processing apparatus of the present invention is a light-transmitting device fixedly installed on the upper surface of a side wall forming a vacuum processing chamber, a stage for placing a processing object, and an upper opening of the vacuum processing chamber.
  • a vacuum processing apparatus having a partition and a light irradiation device outside the vacuum processing chamber, the first sealing member made of resin provided on the upper surface edge of the light transmissive partition, and the vacuum processing chamber
  • a resin-made second seal member provided in a portion of the upper surface portion of the side wall where the light-transmissive partition wall is not installed, and a pressing member for the first seal member and the second seal member, the first seal A pressing member that seals the vacuum processing chamber with the member and the second sealing member is provided.
  • the light irradiation device is an ultraviolet irradiation device.
  • the pressing member is further provided with a flange member for partitioning the first seal member and the second seal member.
  • the vacuum processing apparatus also has a light transmission that is fixedly installed on a vacuum processing chamber, a stage for placing an object to be processed, and an upper surface of a side wall that forms an upper opening of the vacuum processing chamber.
  • a vacuum processing apparatus having a conductive partition and a light irradiation device outside the vacuum processing chamber, the clearance between the side surface of the light transmissive partition wall and the side wall of the vacuum processing chamber facing the side surface
  • a resin sealing member provided to seal the portion and a pressing member for the sealing member are provided.
  • the processing target object processing method is an upper surface of a side wall that forms an upper opening of a vacuum processing chamber from a light irradiation device with respect to a processing target formed on a surface placed in a vacuum processing chamber.
  • a first sealing member made of resin provided on the upper surface edge of the light-transmitting partition wall when irradiating light through a light-transmitting partition wall fixed to the part and processing the object to be processed;
  • a resin-made second seal member provided on a portion of the upper surface of the side wall of the vacuum processing chamber where the light-transmitting partition is not installed, and a pressing member for the first seal member and the second seal member.
  • the first sealing member and the second sealing member are provided with a pressing member that seals the vacuum processing chamber. It is characterized by treating the membrane.
  • the light irradiation device is an ultraviolet irradiation device.
  • the film is a low dielectric constant film.
  • the film forming apparatus of the present invention includes a coating apparatus for use in forming a film on a processing target, the vacuum processing apparatus, and a processing target having a film formed by coating using the coating apparatus.
  • a load / unload chamber for loading and unloading objects into and from the vacuum processing chamber is provided.
  • the film formed using the coating apparatus is a low dielectric constant film.
  • the resin sealing member is not irradiated with light energy such as ultraviolet rays, and as a result, bonds such as carbon-carbon bonds in the resin are cut by light energy such as ultraviolet rays.
  • light energy such as ultraviolet rays
  • bonds such as carbon-carbon bonds in the resin are cut by light energy such as ultraviolet rays.
  • the transmission area of light such as ultraviolet rays is not reduced, the intensity of light reaching the object to be processed is lowered, and the irradiation light intensity distribution is deteriorated. It is possible to achieve an effect that the device cost is not reduced, and an effect that the apparatus cost is not different from the conventional one.
  • the conceptual diagram which shows typically an example of a structure of the conventional vacuum processing apparatus The conceptual diagram which shows typically another example of a structure of the conventional vacuum processing apparatus.
  • the conceptual diagram which shows typically another example of a structure of the conventional vacuum processing apparatus The conceptual diagram which shows typically one Embodiment of the structure of the vacuum processing apparatus of this invention.
  • FIGS. 4 (a) and 4 (b) and FIG. For convenience of explanation, a case where an ultraviolet irradiation device is used as a light irradiation device, a quartz window is used as a light transmissive partition, and a wafer is used as a processing object will be described as an example.
  • this vacuum processing apparatus includes a vacuum processing chamber 41 as a housing, a stage 43 for mounting a wafer 42, and A heating means (not shown) such as a lamp means for heating the wafer 42 installed below the stage 43 to a predetermined temperature and an upper surface of the side wall forming the upper opening of the vacuum processing chamber 41 are fixed.
  • Light-transmitting partition walls (quartz windows) 44 (there is no limitation on the shape thereof, but examples thereof include a square shape and a disk shape), that is, at least the upper surface portion of the side wall of the vacuum processing chamber 41
  • the lower surface edge portion of the quartz window 44 may be installed on a part of the vacuum side of the upper surface portion of the side wall of the vacuum processing chamber 41, and the quartz window 44 is a side surface of the quartz window 44 as shown in the figure.
  • the upper surface of the side wall of the vacuum processing chamber 41 facing the upper surface of the quartz window and the upper surface of the quartz window may be placed flush with each other.
  • the pressing member 47 may be provided with a flange member which is a protruding portion between the two seal members.
  • the dimensions of the sealing members 46a and 46b may be the same or different.
  • the first seal member 46a may be larger than the second seal member 46b.
  • first seal member 46a is provided as a seal member, and an ultraviolet resistant material such as metal (for example, Al, Ti, etc.) is provided at a position corresponding to the second seal member 46b.
  • an ultraviolet resistant material such as metal (for example, Al, Ti, etc.)
  • a member made of Fe, Ni, Cu, Ag, SUS, or the like may be provided.
  • the pressing member for pressing the first seal member 46a is a pressing member provided with hook members which are protrusions on both edge portions.
  • sealing may be performed with one sealing member 46.
  • the seal member 46 is provided so as to seal a clearance portion between the side surface of the quartz window 44 and the side surface of the side wall of the vacuum processing chamber 41 facing the side surface.
  • the lower surface of the protrusion of the flange member 47 a which is a protrusion provided on the edge of the pressing member 47 is fixed to the upper surface of the quartz window 44 and the upper surface of the side wall of the vacuum processing chamber 41, respectively.
  • the seal member 46 is pressed down, and as a result, the inside of the vacuum processing chamber 41 is vacuum-sealed.
  • the surface of the wafer 42 placed on the stage 43 is passed through the quartz window 44 from the ultraviolet irradiation apparatus 45 such as an ultraviolet lamp installed above the outside of the apparatus.
  • the wafer 42 that can be irradiated with ultraviolet rays and on which various films are formed can be processed.
  • the ultraviolet rays are irradiated only on the wafer 42, and the ultraviolet rays are not irradiated on the resin-made first sealing member 46a and the second sealing member 46b.
  • bonds such as carbon-carbon bonds in the resin are not broken by ultraviolet rays, and the resin is not decomposed and deteriorated. Therefore, organic impurities generated by the decomposition of the resin are not generated in the vacuum processing apparatus, and the inside of the apparatus and the wafer are not contaminated.
  • FIG. 4A the case of FIG.
  • the sealing member is arranged at a position where the ultraviolet ray is irradiated only on the wafer 42 and not on the sealing member.
  • the pressing member 47 is made of an ultraviolet blocking material (for example, Be, B, C, Mg, Al, Si, P, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Se, As, Sr, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Te, Ba, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, Tl, Pb, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, At least one metal selected from Ho, Er, Tm, Yb, Lu, Ac,
  • an ultraviolet blocking material for example, Be, B, C, Mg, Al, Si, P, Ca, Sc, Ti, V, Cr, Mn, Fe, Co
  • the sealing member may be made of a fluororesin (for example, Teflon (registered trademark)), fluororubber, nitrile rubber, silicon rubber, chloroprene rubber, or the like. (Registered trademark) seal member and the like.
  • a fluororesin for example, Teflon (registered trademark)
  • fluororubber for example, fluororubber, nitrile rubber, silicon rubber, chloroprene rubber, or the like. (Registered trademark) seal member and the like.
  • this processing method can be performed using the vacuum processing apparatus shown in FIG. That is, the wafer 42 on which a thin film such as a low dielectric constant film placed in the vacuum processing chamber 41 is formed is irradiated with ultraviolet rays from the ultraviolet irradiation device 45 through a quartz window 44 provided in the vacuum processing chamber 41.
  • a resin-made first seal member (for example, O-ring) 46 a provided on the upper surface edge of the quartz window 44 and the upper surface of the side wall of the vacuum processing chamber 41.
  • a quartz window of a quartz window member configured so that the vacuum processing chamber 41 can be vacuum-sealed by a sealing structure including a pressing member 47 having a flange member 47a which is a protruding portion. 42 the surface of a method of processing a thin film by performing UV irradiation.
  • a flange member that is a protrusion for partitioning the first seal member 46a and the second seal member 46b may be provided between the two seal members.
  • the thin film can be processed in the same manner.
  • the processing method of the processing object according to the present invention will be described in more detail as follows when a low dielectric constant film is used as the processing target film and this film is cured.
  • a known low dielectric constant material coating solution for example, coating solution manufactured by ULVAC, Inc .: ULKS (registered trademark)
  • ULKS registered trademark
  • This coating method is not limited, and any method that is usually used may be used as long as it can be applied uniformly.
  • the wafer on which the coating solution has been uniformly applied is baked at a low temperature (for example, about 70 to 150 ° C.)
  • the wafer having the low dielectric constant film formed thereon is transported into a vacuum processing apparatus and used as a lamp heating means.
  • the low dielectric constant film is cured by irradiating the wafer with ultraviolet rays from an ultraviolet irradiation device, and having a predetermined mechanical strength. Can be formed.
  • the process proceeds to a process of further laminating another film on the low dielectric constant film or processing the low dielectric constant film as desired.
  • this film forming apparatus includes a coating apparatus 51 for use in forming a thin film such as a low dielectric constant film on a wafer, and the like. 4A and 4B, a vacuum processing apparatus 52, which is a vacuum processing apparatus, and a wafer having a thin film formed by coating using the coating apparatus 51 are carried into and out of the vacuum processing chamber.
  • Load / unload chamber (L / UL chamber) 53 for the wafer, and the wafer stored in the load / unload chamber 53 passes through the transfer chamber 54 in which the transfer robot is installed. Then, the thin film is processed there, and then transferred to a load / unload chamber (L / UL chamber) 53.
  • One or a plurality of apparatuses 55 to be performed can be arranged around the transfer chamber 54, and can be configured to be carried in / out by a transfer robot in the transfer chamber 54 to perform each processing.
  • the vacuum processing apparatus shown in FIG. 4 has been described by taking an ultraviolet irradiation apparatus as a light energy source and a quartz window, which is an ultraviolet transmission window as a light transmissive partition, as an example for convenience of description. Even if an optical energy source such as an infrared irradiation device, an X-ray generation device, a laser generation device, a visible light generation device, a glass material other than a quartz window, or a light-transmitting barrier such as sapphire, CaF 2 , or MgF 2 is applied.
  • a vacuum processing apparatus capable of performing the above process can be configured.
  • the vacuum processing apparatus has been specifically described as an example of an apparatus for processing a processing object in which a low dielectric constant material is formed on a surface by applying a low dielectric constant material using a spin coater.
  • the present invention can also be applied to processing of a processing object on which a low dielectric constant film or other film is formed by a film forming apparatus such as the above.
  • the present invention can be applied to the treatment of the substrate surface itself on which no film is formed.
  • the following application is possible as processing by ultraviolet irradiation in vacuum.
  • the following application is possible as processing by ultraviolet irradiation in vacuum.
  • Nano-sized quartz or the like is resisted. It can be hardened by ultraviolet irradiation (+ heat) in a state of being pressed against the surface, peeled off, and transferred to a pattern to create a pattern in which bubbles do not enter or difficult to enter.
  • the surface of the substrate can be modified by removing the substrate and improving the adhesion of the surface of the substrate.
  • the substrate should be exposed to ultraviolet rays in a consistent vacuum.
  • the film can be formed with good adhesion after cleaning.
  • the thin film to be processed will be described by taking a low dielectric constant film as an example.
  • the thin film is not limited to this film.
  • the vacuum processing apparatus is further provided inside the vacuum processing chamber, and heats the inside of the vacuum processing chamber and the processing object to obtain a predetermined temperature distribution.
  • a light transmissive partition wall for example, an ultraviolet light such as a quartz window
  • a window member that transmits light (for example, a light energy source such as ultraviolet light) from a light irradiation device (for example, an ultraviolet irradiation device).
  • a blocking member A provided inside the vacuum processing chamber to block heat from the heat source. Since the configuration other than the blocking member is the same as that of the vacuum processing apparatus of the present invention, detailed description thereof is omitted.
  • a processing object such as a wafer is not present, that is, when heating is performed by a heat source as preheating before processing of the processing object, a light transmitting partition or an optical energy source such as ultraviolet rays through the partition is used.
  • Can be blocked by the blocking member A and when the object to be processed is heated and the energy from the optical energy source is applied, the influence of the heat on the partition walls and the optical energy source in the vacuum processing chamber is eliminated. Only necessary preheating can be performed.
  • the blocking member A is provided so as to face the partition wall, at least heat from the heat source for the partition wall can be blocked. Further, by blocking the heat to the light transmissive partition wall by the blocking member A, it is possible to prevent the occurrence of cracks due to deformation due to the difference in thermal expansion between the fixed portion of the partition wall and the vacuum processing chamber.
  • the vacuum processing chamber is cylindrical, and the partition is fixed and arranged as a ceiling member in the upper opening of the vacuum processing chamber, and a light irradiation device is provided on the atmosphere side of the partition,
  • a stage for supporting the object to be processed may be provided inside the vacuum processing chamber, the heat source may be provided below the stage, and the blocking member A may be formed in a disk shape and provided at the top of the stage.
  • fever from the heat source to the light irradiation apparatus through the said partition and a partition can be interrupted
  • a square shape and a disk shape can be mentioned, for example.
  • the heat source may be a lamp heating means, and is provided at the lower part of the stage.
  • the substrate since the substrate is heated by raising the temperature inside the vacuum processing chamber using the lamp heating means, the substrate can be heated without bringing the heating means into contact with the substrate.
  • the blocking member A may be configured such that a circular opening is formed in the center portion, and heat to the peripheral edge portion of the partition wall is mainly blocked.
  • the blocking member A having a circular opening at the center the influence of heat on the fixed portion at the periphery of the partition wall in the metal vacuum processing chamber can be reduced, and the thermal expansion coefficient It is possible to prevent cracks from being generated at the periphery of the partition wall due to the deformation due to the difference between them, and to eliminate the influence of heat on the partition wall and the light irradiation means in the vacuum processing chamber.
  • a plurality of small holes may be formed in the blocking member A so that the temperature inside the processing chamber is maintained and heat is blocked.
  • the temperature in the vacuum processing chamber can be controlled, and the influence of heat on the partition wall and the light irradiation device above the vacuum processing chamber can be eliminated.
  • a low dielectric constant film is formed by applying a composition for a low dielectric constant film to the object to be treated, the film is irradiated with light from a light irradiation device, and the heat source is used.
  • the low dielectric constant film can be cured by heating. During this curing process, it is possible to eliminate the influence of heat on the partition walls and the light energy source in the vacuum processing chamber, and to perform only the necessary preheating.
  • the processing object coated with the low dielectric constant film composition is heated and the low dielectric constant film is used.
  • the processing method of forming a modified thin film on the surface of the processing object by irradiating the thin film obtained from the composition with ultraviolet light or the like from the outside of the vacuum processing chamber the processing object is processed. Except when performing, the heat at the time of heating the inside of the vacuum processing chamber is cut off from the irradiation source of the light irradiation apparatus and the light transmission portion of the vacuum processing chamber. In this case, for example, when forming a modified thin film by curing a low dielectric constant film, it is possible to eliminate the influence of heat on the light transmission site and the light irradiation treatment, and to perform only necessary preheating.
  • a film forming apparatus is a coating apparatus that applies a composition for a low dielectric constant film to a processing object, and a coating apparatus that uses the coating apparatus to form a low dielectric constant film.
  • the above-described vacuum processing apparatus that is, the vacuum processing apparatus shown in FIGS. 6 to 8 which will be described in detail below
  • This vacuum processing apparatus eliminates the influence of heat on the vacuum processing chamber and the light energy source in the processing step, and can perform only necessary preheating.
  • the above-described vacuum processing apparatus eliminates the influence of heat on the light-transmitting partition walls and the energy source in the vacuum processing chamber during the process of heating the object to be processed and applying energy from the light energy source, and performs only necessary preheating. It becomes possible to do.
  • the film forming apparatus eliminates the influence of heat on the vacuum processing chamber and the light energy source, and can perform only necessary preheating.
  • FIG. 6 a vacuum processing apparatus for producing a modified low dielectric constant film on a processing target will be specifically described.
  • FIG. 6 about the example of the vacuum processing apparatus which has the above-mentioned interruption
  • FIG. 6 and FIG. 4 are different in drawing, they are basically different only in terms of the presence or absence of a blocking member, and the other components are substantially the same.
  • the vacuum processing apparatus includes a cylindrical metal vacuum processing chamber 61 having an open top, as in FIG. 4, and an opening 62 is formed above the vacuum processing chamber 61. Is formed.
  • a disc-shaped quartz window 63 is disposed in the opening 62 of the vacuum processing chamber 61, and the lower surface edge of the quartz window 63 is a part of the upper surface of the side wall of the vacuum processing chamber 61 (in FIG. 6, the edge 62a of the upper surface of the side wall). It is fixed on the top.
  • the vacuum processing chamber 61 can be vacuum-sealed.
  • a collar member which is a protrusion may be provided between them.
  • a transfer port 65 is provided in the side wall of the vacuum processing chamber 61, and the processing object 66 is carried in and out through the transfer port 65.
  • the vacuum processing chamber 61 includes a stage 67 on which a processing target is placed and supported, and the stage 67 is configured to be movable up and down.
  • a holding member 68 is provided on the stage 67, and the processing object 66 is regulated and held at a predetermined position by the holding member.
  • a lamp heater 69 is provided as a lamp heating means serving as a heat source, and the inside of the vacuum processing chamber 61 and the processing object 66 are heated by this lamp heater and kept at a predetermined temperature distribution.
  • a reflector 70 may be provided inside the vacuum processing chamber 61.
  • the stage 67 and the lamp heater 69 are arranged laterally while avoiding the route for carrying in / out the processing object 66 from the carrying port 65. And it is covered with the reflector 70 from below.
  • an ultraviolet irradiation device 71 is provided above the quartz window 63, and the processing object 66 having a low dielectric constant film on the surface is irradiated with ultraviolet rays from the ultraviolet irradiation device 71 through the quartz window 63 and processed.
  • Support members 72 are fixedly provided at a plurality of positions on the inner wall of the vacuum processing chamber 61 above the stage 67, and a disc-shaped block disc 73 as a block member A is placed on the support member 72. Yes.
  • the blocking board 73 is carried into the vacuum processing chamber 61 through the transfer port 65.
  • the temperature of the vacuum processing chamber 61 is increased by the lamp heater 69, the heat transfer to the quartz window 63 and the ultraviolet irradiation device 71 is blocked by this blocker.
  • the breaker 73 is made of an inexpensive material having a high heat resistance, low thermal expansion, low specific gravity, and low cost.
  • the breaker 73 is made of ceramics such as alumina, SiC, SiN, or a metal such as Ti.
  • the processing object 66 having a low dielectric constant film on the surface is heated to a predetermined temperature (for example, 350 ° C.) by the lamp heater 69, and ultraviolet light is processed from the ultraviolet irradiation device 71 through the quartz window 63. 66 is irradiated. By irradiating ultraviolet rays, the low dielectric constant film is cured, and a low dielectric constant film having sufficient mechanical strength is produced on the object to be processed.
  • a predetermined temperature for example, 350 ° C.
  • the temperature of the vacuum processing chamber 61 Prior to irradiating the object to be processed with ultraviolet rays, the temperature of the vacuum processing chamber 61 is raised by the lamp heater 69 to preheat the jig and the processing chamber installed in the processing chamber to a predetermined temperature. At this time, the blocking board 73 placed on the support member 72 blocks the heat transfer to the quartz window 63 and the ultraviolet irradiation device 71. As a result, the quartz window 63 and the ultraviolet irradiation device 71 are not affected by the heat for heating the vacuum processing chamber 61, and the temperature of the atmosphere below the blocking plate 73 can be kept uniform in a required state. it can.
  • the quartz window 63 and the ultraviolet irradiation device 71 are not affected by heat, so there is no possibility of overheating, and the edge of the quartz window 63 in the metal vacuum processing chamber 61 is not affected.
  • the influence of heat on the fixing portion (that is, the fixing portion on the edge portion 62a of the upper surface of the side wall in the opening 62) can be reduced, and cracks are generated at the periphery of the quartz window 63 due to deformation based on the difference in thermal expansion coefficient. It is prevented. Further, the ultraviolet irradiation device 71 is not exposed to heat, and thermal damage does not occur.
  • the ultraviolet irradiation device 71 is not exposed to heat, it is possible to simplify the heat countermeasures on the ultraviolet irradiation device 71 side. Since the lamp heater 69 is used as the heat source, the heat source does not come into contact with the object to be processed 66, and there is no risk of contamination.
  • FIG. 7 shows a schematic cross-sectional state from the side of the entire vacuum processing apparatus. Since this vacuum processing apparatus is different from the above-described vacuum processing apparatus shown in FIG. 6 only in the shape of the barrier, the same members are denoted by the same reference numerals, and redundant description is omitted.
  • Support members 72 are fixedly provided at a plurality of positions on the inner wall of the vacuum processing chamber 61 above the stage 67, and a blocking plate 74 serving as a blocking member A is placed on the support member 72.
  • the shut-off disc 74 has a disc shape, and a circular opening 75 is formed at the center.
  • the shut-off plate 74 is carried into the vacuum processing chamber 61 through the transfer port 65.
  • the quartz window 63 in particular, a fixing portion to the upper opening of the vacuum processing chamber 61 which is the peripheral portion of the quartz window 63, and an ultraviolet irradiation device The heat transfer to 71 is cut off.
  • the peripheral portion of the quartz window 63 is not affected by heat when preheating is performed, so there is no possibility of overheating, and a metal vacuum processing chamber is provided.
  • the influence of heat on the fixed portion at the periphery of the quartz window 63 installed in the upper opening of 61 can be greatly reduced, and cracks are generated at the periphery of the quartz window 63 due to deformation based on the difference in thermal expansion coefficient. Is reliably prevented.
  • the opening 75 is formed in the shut-off disc 74, the entire atmosphere of the vacuum processing chamber 61 can be raised in temperature uniformly.
  • a lightweight barrier board 74 can be provided to prevent the occurrence of cracks in the quartz window 63, and cracks in the periphery of the quartz window 63 can be provided. Preheating can be performed in a state in which generation is reliably prevented.
  • the breaker may be a breaker whose shape is a disk and the outer peripheral part is thicker than the thickness of the central part, and the outer peripheral part is thicker.
  • the blocker may be a blocker having a disk shape and formed with a plurality of small holes, and by providing the blocker with the small holes formed in this way, the entire atmosphere of the vacuum processing chamber 61 is provided. Can be controlled more easily.
  • FIG. 8 shows a cross-sectional state from the side of the entire vacuum processing apparatus. Since this vacuum processing apparatus is different from the above-described vacuum processing apparatus shown in FIGS. 6 and 7 only in the configuration of the stage, the same members are denoted by the same reference numerals, and redundant description is omitted.
  • a stage 67 is provided inside the vacuum processing chamber 61, and the stage 67 is configured to be movable up and down.
  • a hot plate 76 as a heat source is provided on the upper surface of the stage 67.
  • a processing object 66 is directly placed on the hot plate 76, and the back surface of the processing object is heated to a predetermined temperature.
  • the lamp heater 69 in FIGS. 6 and 7 is not provided.
  • the quartz window 63 and the ultraviolet irradiation apparatus 71 are not affected by heat, as in the case of FIGS.
  • the vacuum processing apparatus shown in FIGS. 6 to 8 is described by taking an ultraviolet irradiation apparatus as a light energy source, a quartz window as an ultraviolet transmission window as a light transmissive partition, and an ultraviolet blocking member as an optical energy blocking member for convenience of explanation.
  • light energy sources such as microwave generators, infrared irradiation apparatuses, X-ray generators, laser generators, visible light generators, glass materials other than quartz windows, sapphire, CaF 2 , MgF 2, etc.
  • a vacuum processing apparatus capable of the same processing can be configured even by applying a light energy blocking member made of the above-described metals, alloys, oxides, nitrides, fluorides or the like other than the light transmitting partition walls and the ultraviolet blocking member.
  • these vacuum processing apparatuses have been described as apparatuses for processing an object to be processed on which a low dielectric constant film is formed by applying a low dielectric constant material to the surface with a spin coater.
  • these apparatuses are components such as a CVD apparatus.
  • the present invention can also be applied to processing of a processing object in which a low dielectric constant film or other film is formed by a film device.
  • the present invention can be applied to the processing of the substrate surface itself on which no film is formed.
  • the resin sealing member is prevented from being irradiated with light such as ultraviolet rays, so that there is no problem of resin deterioration, and organic matter generated by decomposition of the resin. Impurities are not generated in the vacuum processing apparatus and contaminate the inside of the apparatus and the object to be processed. Therefore, it can be used in various industrial fields using a vacuum processing apparatus that performs processing by light irradiation in a vacuum processing chamber. For example, it can be used in an industrial field for producing a low dielectric constant film.

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Abstract

Disclosed are: a vacuum processing apparatus which comprises a sealing structure wherein a sealing member, which is formed from a resin, is prevented from being irradiated with light; a method for processing an object to be processed, wherein the vacuum processing apparatus is used; and a film forming apparatus which comprises the vacuum processing apparatus. Specifically disclosed is a vacuum processing apparatus which comprises: a vacuum processing chamber (41); a stage (43); a light-transmitting partition wall (44) that is affixed to the upper surface of the side wall that forms an upper opening portion of the vacuum processing chamber; and a light irradiation device (45) that is arranged outside the vacuum processing chamber. The vacuum processing apparatus also comprises: a first sealing member (46a) that is formed from a resin and provided on the upper peripheral portion of the light-transmitting partition wall; a second sealing member (46b) that is formed from a resin and provided on a portion of the upper surface of the side wall of the vacuum processing chamber, on said portion the light-transmitting partition wall is not provided; and a pressing member (47) that is a member pressing the first and second sealing members and seals the vacuum processing chamber together with the first sealing member and the second sealing member. An object to be processed is processed using the vacuum processing apparatus. A film forming apparatus comprises the vacuum processing apparatus.

Description

真空処理装置、処理対象物の処理方法、及び成膜装置Vacuum processing apparatus, processing object processing method, and film forming apparatus
 本発明は、真空処理装置、処理対象物の処理方法、及び成膜装置に関し、特に光透過性隔壁をシールするためのシール部材が紫外線照射を受けないようにするシール構造を備えた真空処理装置、この真空処理装置を用いる処理対象物の処理方法、及びこの真空処理装置を備えた成膜装置に関する。 The present invention relates to a vacuum processing apparatus, a processing object processing method, and a film forming apparatus, and in particular, a vacuum processing apparatus having a sealing structure that prevents a sealing member for sealing a light transmissive partition wall from being irradiated with ultraviolet rays. The present invention also relates to a processing method of a processing object using the vacuum processing apparatus, and a film forming apparatus including the vacuum processing apparatus.
 半導体素子の微細化・高集積化が進むにつれて、信号伝達遅延や消費電力の増大を抑制する必要がある。このため、配線間の容量を低減する目的で、配線膜として、低誘電率材料からなる層間絶縁膜を使用する技術が開発されている。 It is necessary to suppress signal transmission delay and increase in power consumption as semiconductor elements are miniaturized and highly integrated. For this reason, in order to reduce the capacitance between wirings, a technique has been developed that uses an interlayer insulating film made of a low dielectric constant material as a wiring film.
 低誘電率膜を作製する技術として、スピンコータにより層間絶縁膜を作製するための低誘電率材料(例えば、Low-k材料)を処理対象物上に塗布して低誘電率膜を形成し、処理対象物を加熱すると共に低誘電率膜に紫外線を照射して硬化させ、十分な機械的強度を有する低誘電率膜を作製することが知られている(例えば、特許文献1参照)。 As a technique for producing a low dielectric constant film, a low dielectric constant film (for example, a low-k material) for producing an interlayer insulating film by applying a spin coater is applied on a processing target to form a low dielectric constant film. It is known that a low dielectric constant film having sufficient mechanical strength is produced by heating an object and irradiating the low dielectric constant film with ultraviolet rays to cure (see, for example, Patent Document 1).
 また、CVD装置により処理対象物上に低誘電率膜を堆積させ、処理対象物を加熱すると共に堆積した低誘電率膜に紫外線を照射して硬化させ、十分な機械的強度を有する低誘電率膜を処理対象物上に作製することが知られている(例えば、特許文献2参照)。 Also, a low dielectric constant film having a sufficient mechanical strength is obtained by depositing a low dielectric constant film on the object to be processed by a CVD apparatus, heating the object to be processed, and curing the deposited low dielectric constant film by irradiating ultraviolet rays. It is known to produce a film on a processing object (see, for example, Patent Document 2).
 上記したようにして低誘電率膜を作製する場合、紫外線を照射して硬化させる工程は、処理対象物を加熱する機構及び真空処理室内の処理対象物に紫外線を照射する機構(紫外線照射装置)を備えた真空処理装置を用いて実施されている。この紫外線照射装置は、真空処理装置の外部に設置されているものもあり、この場合、真空処理室の上部の開口部に紫外線透過窓(例えば、石英窓等)が固定されて設置され、紫外線がこの透過窓を通して処理室内に載置される処理対象物上に照射されるように構成されている。この紫外線透過窓を固定して真空シールする場合、樹脂製のシール部材を使用している場合が多いが、このシール部材の劣化について配慮している技術はない。 When producing a low dielectric constant film as described above, the step of irradiating and curing ultraviolet rays includes a mechanism for heating the object to be processed and a mechanism for irradiating the object to be processed in the vacuum processing chamber (ultraviolet irradiation apparatus). It is implemented using the vacuum processing apparatus provided with. Some of these ultraviolet irradiation apparatuses are installed outside the vacuum processing apparatus. In this case, an ultraviolet transmission window (for example, a quartz window) is fixedly installed in the upper opening of the vacuum processing chamber. Is irradiated onto a processing object placed in the processing chamber through the transmission window. In the case of vacuum sealing with this ultraviolet light transmitting window fixed, there are many cases where a resin sealing member is used, but there is no technology that takes into account the deterioration of the sealing member.
 上記したように、紫外線照射等の光照射により処理対象物の表面を処理するために使用する真空処理装置では、石英からなる光透過性隔壁を用い、その隔壁を通して光照射を行っている。この石英は、硬く、塑性が強い材料であるため、一般的に、真空処理装置に光透過性隔壁を設ける場合のシール部材として、金属ガスケットのような硬い材料からなるものではなく、オーリングやテフロン(登録商標)リングのような柔らかくて弾性の強い樹脂製の材料からなるものが使用されている。このようなシール部材は、多くの場合、図1に示すような真空処理装置を構成する筐体11の上部で、かつ光透過性隔壁12の縁部の下側で、真空側に設置されており、主に光透過性隔壁12にかかる大気圧を利用することで、光透過性隔壁12を樹脂製のシール部材13に押しつけ潰すことによりシールしている。図1において、14はウェハ支持ステージ、15は処理対象物のウェハである。 As described above, in a vacuum processing apparatus used for treating the surface of an object to be treated by light irradiation such as ultraviolet irradiation, a light transmissive partition made of quartz is used, and light is irradiated through the partition. Since this quartz is a hard and highly plastic material, it is generally not made of a hard material such as a metal gasket as a sealing member when providing a light-transmitting partition wall in a vacuum processing apparatus. A material made of a soft and elastic resin material such as a Teflon (registered trademark) ring is used. Such a seal member is often installed on the vacuum side at the upper part of the casing 11 constituting the vacuum processing apparatus as shown in FIG. 1 and below the edge of the light transmissive partition wall 12. In addition, by using the atmospheric pressure mainly applied to the light transmissive partition wall 12, the light transmissive partition wall 12 is pressed against the resin seal member 13 and sealed. In FIG. 1, 14 is a wafer support stage, and 15 is a wafer to be processed.
 しかし、真空処理装置の外部に設置した紫外線照射装置を用いて、この装置の上方に設けられた、上記樹脂製材料で真空シールされている光透過性隔壁である石英窓を通して装置内に載置された処理対象物に紫外線照射処理を行う真空処理装置の場合、以下のような問題がある。 However, using an ultraviolet irradiation device installed outside the vacuum processing apparatus, it is placed in the apparatus through a quartz window, which is a light-transmitting partition wall vacuum-sealed with the resin material provided above the apparatus. In the case of a vacuum processing apparatus that performs ultraviolet irradiation processing on the processed object, there are the following problems.
 例えば、図2に示すような、筐体21と、その上部に設置された石英窓22と、石英窓22と筐体21の上部との間で真空側に設置されているシール部材23(例えば、オーリング等)とを有する真空処理装置であって、図1の場合と同様にシールされている装置において、この装置の外部の上方に設置した紫外線ランプのような紫外線照射装置24から石英窓22を通して、ステージ25上に載置されている処理対象物のウェハ26上に紫外線を照射すると、ウェハ26だけでなく、樹脂製のシール部材23にも紫外線が照射されてしまう。その結果、樹脂中の炭素-炭素結合等の結合が紫外線によって切断されて、樹脂が分解され、劣化してしまうという問題がある。さらに、樹脂の分解により生じる有機物の不純物が真空処理装置内に発生するので、装置内部や処理対象物を汚染させてしまうという問題もある。 For example, as shown in FIG. 2, a casing 21, a quartz window 22 installed on the top thereof, and a seal member 23 (for example, installed on the vacuum side between the quartz window 22 and the top of the casing 21 (for example, , O-ring, etc.), which is sealed in the same manner as in FIG. 1, in a quartz window from an ultraviolet irradiation device 24 such as an ultraviolet lamp installed outside the device. When the ultraviolet ray is irradiated onto the wafer 26 to be processed placed on the stage 25 through 22, the ultraviolet ray is irradiated not only on the wafer 26 but also on the resin seal member 23. As a result, there is a problem that bonds such as carbon-carbon bonds in the resin are broken by ultraviolet rays, and the resin is decomposed and deteriorated. Furthermore, since organic impurities generated by the decomposition of the resin are generated in the vacuum processing apparatus, there is a problem that the inside of the apparatus and the object to be processed are contaminated.
 上記図2に示す真空処理装置において、紫外線照射装置を装置内部に設置すれば、石英窓を使用する必要もないので、上記のような問題は起こらないが、放電による装置内部における不純物汚染対策の面から、また、装置のメンテナンス性の悪さの面から、紫外線照射装置は真空処理装置の外部に設置することが好ましい。 In the vacuum processing apparatus shown in FIG. 2, if the ultraviolet irradiation apparatus is installed inside the apparatus, it is not necessary to use a quartz window. Therefore, the above problem does not occur. From the standpoint of the surface and the poor maintainability of the apparatus, the ultraviolet irradiation device is preferably installed outside the vacuum processing apparatus.
 また、上記問題点の対策として、図2と同様な真空処理装置において、図3に示すように、筐体31の上部に設けた石英窓32の大気側に紫外線を一部遮断する遮断部材37を設けることにより、樹脂製のシール部材(例えば、オーリング等)33に紫外線が照射されないような方法が考えられる。図3において、34は紫外線照射装置、35はウェハ支持ステージ、36はウェハである。 Further, as a countermeasure against the above problem, in a vacuum processing apparatus similar to FIG. 2, as shown in FIG. 3, a blocking member 37 that partially blocks ultraviolet rays on the atmosphere side of the quartz window 32 provided on the upper portion of the housing 31. It is conceivable to provide a method in which ultraviolet rays are not irradiated to the resin seal member 33 (for example, O-ring). In FIG. 3, 34 is an ultraviolet irradiation device, 35 is a wafer support stage, and 36 is a wafer.
 この場合、シール部材33に紫外線が照射されないようにするためには、光透過性隔壁である石英窓32の、それ相応の面積を遮断する必要がある。しかし、石英窓32は大気圧の圧力に耐えられるだけの厚みが必要であるため、遮断面積が増大するに従い、紫外線透過面積が減少し、処理対象物であるウェハ36上に到達する紫外線の光強度が低下し、照射光強度分布が悪化してしまうという問題がある。 In this case, in order to prevent the sealing member 33 from being irradiated with ultraviolet rays, it is necessary to block a corresponding area of the quartz window 32 which is a light-transmitting partition. However, since the quartz window 32 needs to be thick enough to withstand atmospheric pressure, the ultraviolet transmission area decreases as the blocking area increases, and ultraviolet light that reaches the wafer 36 that is the object to be processed. There exists a problem that intensity | strength falls and irradiation light intensity distribution will deteriorate.
 例えば、図3に示すように、遮断部材37を設けて、シール部材33に紫外線が照射されないようにするためには、石英窓32を通過する紫外線は、線A及びBの範囲内になり、ウェハ36上に到達する紫外線の光強度が低下してしまう。また、紫外線透過面積を大きくしようとして、筐体31と石英窓32とをスケールアップすると、コストアップになる上、石英窓32の大気圧に対する十分な強度維持のためにも、その厚みを増やす必要があり、遮断すべき面積がさらに増大してしまい、ウェハ36上に到達する紫外線の光強度がさらに低下してしまうという問題がある。 For example, as shown in FIG. 3, in order to provide the blocking member 37 and prevent the sealing member 33 from being irradiated with ultraviolet rays, the ultraviolet rays passing through the quartz window 32 fall within the range of lines A and B. The light intensity of the ultraviolet rays that reach the wafer 36 is reduced. In addition, if the housing 31 and the quartz window 32 are scaled up in order to increase the ultraviolet transmission area, the cost is increased and the thickness of the quartz window 32 needs to be increased in order to maintain sufficient strength against atmospheric pressure. There is a problem that the area to be blocked is further increased, and the light intensity of ultraviolet rays reaching the wafer 36 is further decreased.
特開2008-4628号公報JP 2008-4628 A 特開2006-165573号公報JP 2006-165573 A
 本発明の課題は、上述の問題点を解決することにあり、樹脂製のシール部材が紫外線照射のような光照射を受けないようにするシール構造を備えた真空処理装置、この真空処理装置を用いて行う処理対象物の処理方法、及びこの真空処理装置を備えた成膜装置を提供することにある。 An object of the present invention is to solve the above-described problems, and a vacuum processing apparatus having a sealing structure that prevents a resin seal member from receiving light irradiation such as ultraviolet irradiation, and the vacuum processing apparatus. An object of the present invention is to provide a processing method of a processing object to be used and a film forming apparatus provided with the vacuum processing apparatus.
 本発明の真空処理装置は、真空処理室と、処理対象物を載置するためのステージと、該真空処理室の上部開口部を形成する側壁の上面部に固定して設置される光透過性隔壁と、該真空処理室の外部に光照射装置とを有する真空処理装置であって、該光透過性隔壁の上面縁部に設けられた樹脂製の第1シール部材と、該真空処理室の側壁の上面部の該光透過性隔壁が設置されていない部分に設けられた樹脂製の第2シール部材と、該第1シール部材及び第2シール部材の押さえ部材であって、該第1シール部材と該第2シール部材とで該真空処理室をシールする押さえ部材とを備えていることを特徴とする。  The vacuum processing apparatus of the present invention is a light-transmitting device fixedly installed on the upper surface of a side wall forming a vacuum processing chamber, a stage for placing a processing object, and an upper opening of the vacuum processing chamber. A vacuum processing apparatus having a partition and a light irradiation device outside the vacuum processing chamber, the first sealing member made of resin provided on the upper surface edge of the light transmissive partition, and the vacuum processing chamber A resin-made second seal member provided in a portion of the upper surface portion of the side wall where the light-transmissive partition wall is not installed, and a pressing member for the first seal member and the second seal member, the first seal A pressing member that seals the vacuum processing chamber with the member and the second sealing member is provided.
 上記真空処理装置において、光照射装置が、紫外線照射装置であることを特徴とする。 In the above vacuum processing apparatus, the light irradiation device is an ultraviolet irradiation device.
 上記真空処理装置において、押さえ部材には、さらに第1シール部材と第2シール部材とを仕切るための鍔部材が設けられていることを特徴とする。 In the above vacuum processing apparatus, the pressing member is further provided with a flange member for partitioning the first seal member and the second seal member.
 本発明の真空処理装置はまた、真空処理室と、処理対象物を載置するためのステージと、該真空処理室の上部開口部を形成する側壁の上面部に固定して設置される光透過性隔壁と、該真空処理室の外部に光照射装置とを有する真空処理装置であって、該光透過性隔壁の側面とその側面と対向している該真空処理室の側壁との間のクリアランス部分をシールするように設けられた樹脂製のシール部材と、該シール部材の押さえ部材とを備えていることを特徴とする。 The vacuum processing apparatus according to the present invention also has a light transmission that is fixedly installed on a vacuum processing chamber, a stage for placing an object to be processed, and an upper surface of a side wall that forms an upper opening of the vacuum processing chamber. A vacuum processing apparatus having a conductive partition and a light irradiation device outside the vacuum processing chamber, the clearance between the side surface of the light transmissive partition wall and the side wall of the vacuum processing chamber facing the side surface A resin sealing member provided to seal the portion and a pressing member for the sealing member are provided.
 本発明の処理対象物の処理方法は、真空処理室内に載置された表面に膜が形成された処理対象物に対して、光照射装置から真空処理室の上部開口部を形成する側壁の上面部に固定して設置された光透過性隔壁を通して光を照射し、該処理対象物を処理する際に、該光透過性隔壁の上面縁部に設けられた樹脂製の第1シール部材と、該真空処理室の側壁の上面部の該光透過性隔壁が設置されていない部分に設けられた樹脂製の第2シール部材と、該第1シール部材及び第2シール部材の押さえ部材であって、該第1シール部材と該第2シール部材とで該真空処理室をシールする押さえ部材とを備えているように構成されてなる該光透過性隔壁を通して光照射して該処理対象物上の膜を処理することを特徴とする。 The processing target object processing method according to the present invention is an upper surface of a side wall that forms an upper opening of a vacuum processing chamber from a light irradiation device with respect to a processing target formed on a surface placed in a vacuum processing chamber. A first sealing member made of resin provided on the upper surface edge of the light-transmitting partition wall when irradiating light through a light-transmitting partition wall fixed to the part and processing the object to be processed; A resin-made second seal member provided on a portion of the upper surface of the side wall of the vacuum processing chamber where the light-transmitting partition is not installed, and a pressing member for the first seal member and the second seal member. The first sealing member and the second sealing member are provided with a pressing member that seals the vacuum processing chamber. It is characterized by treating the membrane.
 上記処理対象物の処理方法において、光照射装置が、紫外線照射装置であることを特徴とする。 In the above processing object processing method, the light irradiation device is an ultraviolet irradiation device.
 上記処理対象物の処理方法において、膜が低誘電率膜であることを特徴とする。 In the method for processing an object to be processed, the film is a low dielectric constant film.
 本発明の成膜装置は、処理対象物上に膜を形成する際に使用するための塗布装置と、上記真空処理装置と、該塗布装置を用いて塗布して形成された膜を有する処理対象物を真空処理室内へ搬入及び搬出するためのロード/アンロード室とを備えたことを特徴とする。 The film forming apparatus of the present invention includes a coating apparatus for use in forming a film on a processing target, the vacuum processing apparatus, and a processing target having a film formed by coating using the coating apparatus. A load / unload chamber for loading and unloading objects into and from the vacuum processing chamber is provided.
 上記成膜装置において、塗布装置を用いて形成する膜が、低誘電率膜であることを特徴とする。 In the above film forming apparatus, the film formed using the coating apparatus is a low dielectric constant film.
 本発明によれば、樹脂製のシール部材が紫外線等の光エネルギーの照射を受けないようになり、その結果、樹脂中の炭素-炭素結合等の結合が紫外線等の光エネルギーによって切断されて樹脂が分解されることもないので、樹脂の劣化という問題が解決され、また、樹脂の分解により生じる有機物の不純物が真空処理装置内に発生することもないので、装置内部や処理対象物を汚染させてしまうという問題も解決されるという効果を奏することができる。 According to the present invention, the resin sealing member is not irradiated with light energy such as ultraviolet rays, and as a result, bonds such as carbon-carbon bonds in the resin are cut by light energy such as ultraviolet rays. As a result, the degradation of the resin is solved, and organic impurities caused by the decomposition of the resin are not generated in the vacuum processing device. It is possible to achieve an effect that the problem of the problem is solved.
 本発明によればまた、特定のシール構造を採用したので、紫外線等の光の透過面積が減少することもなく、処理対象物上に到達する光の強度が低下し、照射光強度分布が悪化してしまうこともないという効果を奏することができ、そして装置コストも従来と変わらないという効果を奏することができる。 According to the present invention, since a specific seal structure is adopted, the transmission area of light such as ultraviolet rays is not reduced, the intensity of light reaching the object to be processed is lowered, and the irradiation light intensity distribution is deteriorated. It is possible to achieve an effect that the device cost is not reduced, and an effect that the apparatus cost is not different from the conventional one.
従来の真空処理装置の構成の一例を模式的に示す概念図。The conceptual diagram which shows typically an example of a structure of the conventional vacuum processing apparatus. 従来の真空処理装置の構成の別の例を模式的に示す概念図。The conceptual diagram which shows typically another example of a structure of the conventional vacuum processing apparatus. 従来の真空処理装置の構成のさらに別の例を模式的に示す概念図。The conceptual diagram which shows typically another example of a structure of the conventional vacuum processing apparatus. 本発明の真空処理装置の構成の一実施の形態を模式的に示す概念図。The conceptual diagram which shows typically one Embodiment of the structure of the vacuum processing apparatus of this invention. 本発明の成膜装置の構成の一実施の形態を模式的に示す概念図。The conceptual diagram which shows typically one Embodiment of the structure of the film-forming apparatus of this invention. 本発明の関連発明の真空処理装置の構成の一実施の形態を模式的に示す概念図。The conceptual diagram which shows typically one Embodiment of the structure of the vacuum processing apparatus of the related invention of this invention. 本発明の関連発明の真空処理装置の構成の別の実施の形態を模式的に示す概念図。The conceptual diagram which shows typically another embodiment of the structure of the vacuum processing apparatus of the related invention of this invention. 本発明の関連発明の真空処理装置の構成のさらに別の実施の形態を模式的に示す概念図。The conceptual diagram which shows typically another embodiment of the structure of the vacuum processing apparatus of the related invention of this invention.
 以下、本発明の実施の形態について図4(a)及び(b)並びに図5を参照して説明する。説明の便宜上、光照射装置として紫外線照射装置を用い、光透過性隔壁として石英窓を用い、処理対象物としてウェハを用いた場合を例に取って説明する。 Hereinafter, embodiments of the present invention will be described with reference to FIGS. 4 (a) and 4 (b) and FIG. For convenience of explanation, a case where an ultraviolet irradiation device is used as a light irradiation device, a quartz window is used as a light transmissive partition, and a wafer is used as a processing object will be described as an example.
 本発明に係る真空処理装置の一実施の形態を示す図4(a)によれば、この真空処理装置は、筐体である真空処理室41と、ウェハ42を載置するためのステージ43と、ステージ43の下方に設置されたウェハ42を所定の温度に加熱するためのランプ手段のような加熱手段(図示せず)と、真空処理室41の上部開口部を形成する側壁の上面に固定して設置される光透過性隔壁(石英窓)44(その形状に制限はないが、例えば角形状や、円盤状等を挙げることができる)、すなわち真空処理室41の側壁の上面部の少なくとも一部(例えば、真空側の縁部)に固定して設置される石英窓44と、真空処理室41の外部に設けた紫外線ランプのような光照射装置(紫外線照射装置)45とを有する真空処理装置であって、石英窓44の上面縁部に設けられた樹脂製の第1シール部材(例えば、オーリング等)46aと、真空処理室41の側壁の上面部の光透過性隔壁が設置されていない部分に設けられた樹脂製の第2シール部材(例えば、オーリング等)46bと、さらに第1シール部材46a及び第2シール部材46bで真空処理室41をシールする押さえ部材47(この押さえ部材47には、その両縁部に、図示したように突起部である鍔部材が設けられている。)とを備えてなり、これにより真空処理室41を真空封止できるように構成されている。上記石英窓44の下面縁部は、真空処理室41の側壁の上面部の一部の真空側に設置されていてもよく、また、石英窓44は、図示したように、石英窓44の側面と対向している真空処理室41の側壁の上面と、石英窓の上面部とが面一になるように設置されていてもよい。 According to FIG. 4A showing an embodiment of a vacuum processing apparatus according to the present invention, this vacuum processing apparatus includes a vacuum processing chamber 41 as a housing, a stage 43 for mounting a wafer 42, and A heating means (not shown) such as a lamp means for heating the wafer 42 installed below the stage 43 to a predetermined temperature and an upper surface of the side wall forming the upper opening of the vacuum processing chamber 41 are fixed. Light-transmitting partition walls (quartz windows) 44 (there is no limitation on the shape thereof, but examples thereof include a square shape and a disk shape), that is, at least the upper surface portion of the side wall of the vacuum processing chamber 41 A vacuum having a quartz window 44 fixed to a part (for example, an edge on the vacuum side) and a light irradiation device (ultraviolet irradiation device) 45 such as an ultraviolet lamp provided outside the vacuum processing chamber 41. A processing apparatus for the quartz window 44; A resin-made first seal member (for example, O-ring) 46a provided at the surface edge and a resin-made resin provided in a portion of the upper surface of the side wall of the vacuum processing chamber 41 where the light-transmitting partition is not provided. A second sealing member (for example, O-ring) 46b, and a pressing member 47 that seals the vacuum processing chamber 41 with the first sealing member 46a and the second sealing member 46b (both edges of the pressing member 47 include As shown in the figure, a flange member that is a protrusion is provided.), So that the vacuum processing chamber 41 can be vacuum-sealed. The lower surface edge portion of the quartz window 44 may be installed on a part of the vacuum side of the upper surface portion of the side wall of the vacuum processing chamber 41, and the quartz window 44 is a side surface of the quartz window 44 as shown in the figure. The upper surface of the side wall of the vacuum processing chamber 41 facing the upper surface of the quartz window and the upper surface of the quartz window may be placed flush with each other.
 上記の場合、2つのシール部材46aと46bとを仕切るために、押さえ部材47には、2つのシール部材の間に突起部である鍔部材を設けても良い。 In the above case, in order to partition the two seal members 46a and 46b, the pressing member 47 may be provided with a flange member which is a protruding portion between the two seal members.
 上記シール部材46a及び46bに関し、その寸法が、両者とも同じ大きさであっても、異なる大きさであっても良い。例えば、第1シール部材46aの方が第2シール部材46bよりも大きくてもよい。 The dimensions of the sealing members 46a and 46b may be the same or different. For example, the first seal member 46a may be larger than the second seal member 46b.
 また、図4(a)には示していないが、シール部材として第1シール部材46aだけを備え、第2シール部材46bに相当する箇所に、金属等の耐紫外線材料(例えば、Al、Ti、Fe、Ni、Cu、Ag、及びSUS等)製の部材を設けても良い。この第1シール部材46aを押さえるための押さえ部材は、その両縁部に突起部である鍔部材が設けられている押さえ部材である。 Although not shown in FIG. 4A, only the first seal member 46a is provided as a seal member, and an ultraviolet resistant material such as metal (for example, Al, Ti, etc.) is provided at a position corresponding to the second seal member 46b. A member made of Fe, Ni, Cu, Ag, SUS, or the like may be provided. The pressing member for pressing the first seal member 46a is a pressing member provided with hook members which are protrusions on both edge portions.
 さらに、図4(b)に示すように、一つのシール部材46でシールしても良い。この場合、石英窓44の側面と真空処理室41の側壁の側面との間のクリアランスを狭めることが好ましい。図4(b)に示すように、シール部材46は、石英窓44の側面とその側面と対向している真空処理室41の側壁の側面との間のクリアランス部分をシールするように設けられている。図4(b)では、押さえ部材47の縁部に設けられた突起部である鍔部材47aの突起部の下面が、それぞれ、石英窓44の上面及び真空処理室41の側壁の上面とに固定されてシール部材46を押さえつけており、その結果、真空処理室41内が真空封止される。 Further, as shown in FIG. 4B, sealing may be performed with one sealing member 46. In this case, it is preferable to narrow the clearance between the side surface of the quartz window 44 and the side surface of the side wall of the vacuum processing chamber 41. As shown in FIG. 4B, the seal member 46 is provided so as to seal a clearance portion between the side surface of the quartz window 44 and the side surface of the side wall of the vacuum processing chamber 41 facing the side surface. Yes. In FIG. 4B, the lower surface of the protrusion of the flange member 47 a which is a protrusion provided on the edge of the pressing member 47 is fixed to the upper surface of the quartz window 44 and the upper surface of the side wall of the vacuum processing chamber 41, respectively. Thus, the seal member 46 is pressed down, and as a result, the inside of the vacuum processing chamber 41 is vacuum-sealed.
 図4(a)に示す真空処理装置を用いれば、装置外部の上方に設置した紫外線ランプのような紫外線照射装置45から石英窓44を通して、ステージ43上に載置されているウェハ42表面上に紫外線を照射でき、表面に各種膜が形成されているウェハ42を処理することができる。この場合、紫外線はウェハ42だけに照射され、樹脂製の第1シール部材46a及び第2シール部材46bに紫外線が照射されることはない。その結果、樹脂中の炭素-炭素結合等の結合が紫外線によって切断されて、樹脂が分解され、劣化してしまうということはない。そのため、樹脂の分解により生じる有機物の不純物が真空処理装置内に発生することはなく、装置内部やウェハを汚染させることもない。図4(b)の場合も同様である。 If the vacuum processing apparatus shown in FIG. 4A is used, the surface of the wafer 42 placed on the stage 43 is passed through the quartz window 44 from the ultraviolet irradiation apparatus 45 such as an ultraviolet lamp installed above the outside of the apparatus. The wafer 42 that can be irradiated with ultraviolet rays and on which various films are formed can be processed. In this case, the ultraviolet rays are irradiated only on the wafer 42, and the ultraviolet rays are not irradiated on the resin-made first sealing member 46a and the second sealing member 46b. As a result, bonds such as carbon-carbon bonds in the resin are not broken by ultraviolet rays, and the resin is not decomposed and deteriorated. Therefore, organic impurities generated by the decomposition of the resin are not generated in the vacuum processing apparatus, and the inside of the apparatus and the wafer are not contaminated. The same applies to the case of FIG.
 なお、図4(a)及び(b)の場合、上記したように、紫外線がウェハ42だけに照射され、シール部材には照射されないような位置にシール部材を配置してある。しかし、紫外線が照射されうるかもしれない位置にシール部材が配置される場合には、押さえ部材47を紫外線遮断材料(例えば、Be、B、C、Mg、Al、Si、P、Ca、Sc、Ti、V、Cr、Mn、Fe、Co、Ni、Cu、Zn、Ga、Ge、Se、As、Sr、Y、Zr、Nb、Mo、Tc、Ru、Rh、Pd、Ag、Cd、In、Sn、Sb、Te、Ba、Hf、Ta、W、Re、Os、Ir、Pt、Au、Hg、Tl、Pb、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu、Ac、Th、Pa、U、Np、Pu、Am、Cm、Bk、Cf、Es、Fm、Md、No、及びLrから選ばれた金属の少なくとも1種、並びにこれら金属の少なくとも2種からなる合金から選ばれた少なくとも1種、並びにこれら金属の酸化物、窒化物、及びフッ化物から選ばれた化合物の少なくとも1種から構成されている)で作製してもよい。 In the case of FIGS. 4A and 4B, as described above, the sealing member is arranged at a position where the ultraviolet ray is irradiated only on the wafer 42 and not on the sealing member. However, when the sealing member is disposed at a position where ultraviolet rays may be irradiated, the pressing member 47 is made of an ultraviolet blocking material (for example, Be, B, C, Mg, Al, Si, P, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Se, As, Sr, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Te, Ba, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, Tl, Pb, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, At least one metal selected from Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, U, Np, Pu, Am, Cm, Bk, Cf, Es, Fm, Md, No, and Lr; And alloys selected from at least two of these metals At least one kind, as well as oxides of these metals, nitrides, and may be made of at least one and a) of a compound selected from fluoride.
 上記シール部材は、フッ素樹脂(例えば、テフロン(登録商標)等)、フッ素ゴム、ニトリルゴム、シリコンゴム、クロロプレンゴム等から作製されたもので良く、フッ素樹脂製のシール部材としては、例えばカルレッツ(登録商標)シール部材等を挙げることができる。 The sealing member may be made of a fluororesin (for example, Teflon (registered trademark)), fluororubber, nitrile rubber, silicon rubber, chloroprene rubber, or the like. (Registered trademark) seal member and the like.
 本発明に係る処理対象物の処理方法の実施の形態によれば、この処理方法は、図4(a)に示された真空処理装置を用いて行うことができる。すなわち、真空処理室41内に載置された低誘電率膜等の薄膜が形成されているウェハ42に対して、紫外線照射装置45から真空処理室41に設けられた石英窓44を通して紫外線を照射し、ウェハ42表面の薄膜を処理する際に、石英窓44の上面縁部に設けられた樹脂製の第1シール部材(例えば、オーリング等)46aと、真空処理室41の側壁の上面部に設けられた樹脂製の第2シール部材(例えば、オーリング等)46bと、さらに第1シール部材46a及び第2シール部材46bを押さえるための押さえ部材47であって、その縁部に設けられた突起部である鍔部材47aを有している押さえ部材47とを備えているシール構造により真空処理室41を真空封止できるように構成されてなる石英窓部材の石英窓を通して、ウェハ42の表面に紫外線照射を行うことにより薄膜を処理する方法である。この場合、第1シール部材46aと第2シール部材46bとを仕切るための突起部である鍔部材が2つのシール部材の間に設けられていても良い。図4(b)の場合も同様にして薄膜を処理できる。 According to the embodiment of the processing method of the processing object according to the present invention, this processing method can be performed using the vacuum processing apparatus shown in FIG. That is, the wafer 42 on which a thin film such as a low dielectric constant film placed in the vacuum processing chamber 41 is formed is irradiated with ultraviolet rays from the ultraviolet irradiation device 45 through a quartz window 44 provided in the vacuum processing chamber 41. When processing the thin film on the surface of the wafer 42, a resin-made first seal member (for example, O-ring) 46 a provided on the upper surface edge of the quartz window 44 and the upper surface of the side wall of the vacuum processing chamber 41. A resin-made second seal member (for example, O-ring) 46b and a pressing member 47 for pressing the first seal member 46a and the second seal member 46b, provided at the edge thereof. Through a quartz window of a quartz window member configured so that the vacuum processing chamber 41 can be vacuum-sealed by a sealing structure including a pressing member 47 having a flange member 47a which is a protruding portion. 42 the surface of a method of processing a thin film by performing UV irradiation. In this case, a flange member that is a protrusion for partitioning the first seal member 46a and the second seal member 46b may be provided between the two seal members. In the case of FIG. 4B, the thin film can be processed in the same manner.
 このような石英窓部材を用いることにより、ウェハ42を処理する際に、紫外線はウェハ42だけに照射され、樹脂製の第1シール部材46a及び第2シール部材46bに紫外線が照射されることはない。その結果、上記したように、処理工程中に、樹脂中の炭素-炭素結合等の結合が紫外線によって切断されて、樹脂が分解され、劣化してしまうということはない。そのため、樹脂の分解により生じる有機物の不純物が真空処理装置内に発生することはなく、装置内部やウェハを汚染させることもない。 By using such a quartz window member, when the wafer 42 is processed, ultraviolet rays are irradiated only to the wafer 42, and ultraviolet rays are irradiated to the resin-made first seal member 46a and the second seal member 46b. Absent. As a result, as described above, during the treatment process, bonds such as carbon-carbon bonds in the resin are not broken by ultraviolet rays, so that the resin is not decomposed and deteriorated. Therefore, organic impurities generated by the decomposition of the resin are not generated in the vacuum processing apparatus, and the inside of the apparatus and the wafer are not contaminated.
 本発明に係る処理対象物の処理方法について、処理対象膜として低誘電率膜を用い、この膜を硬化処理する場合についてより具体的に示せば、以下の通りである。 The processing method of the processing object according to the present invention will be described in more detail as follows when a low dielectric constant film is used as the processing target film and this film is cured.
 この処理方法は、例えば、まず、既知の低誘電率材料の塗布液(例えば、株式会社アルバック製の塗布液:ULKS(登録商標))を、スピンコータにより、所定の回転数で、ウェハ上に塗布する。この塗布方法には制限はなく、均一に塗布できるものであれば、通常用いる方法で良い。塗布液が均一に塗布されたウェハを低温(例えば、70~150℃程度)で焼成した後、低誘電率膜が表面に形成されたウェハを真空処理装置内に搬送し、ランプ加熱手段のような加熱手段によりウェハが所定の温度(例えば、350℃)に加熱されている状態で、このウェハに対して紫外線照射装置から紫外線を照射して低誘電率膜を硬化せしめ、所定の機械的強度を有する膜を形成することができる。 In this treatment method, for example, first, a known low dielectric constant material coating solution (for example, coating solution manufactured by ULVAC, Inc .: ULKS (registered trademark)) is applied onto a wafer at a predetermined rotation speed by a spin coater. To do. This coating method is not limited, and any method that is usually used may be used as long as it can be applied uniformly. After the wafer on which the coating solution has been uniformly applied is baked at a low temperature (for example, about 70 to 150 ° C.), the wafer having the low dielectric constant film formed thereon is transported into a vacuum processing apparatus and used as a lamp heating means. In a state where the wafer is heated to a predetermined temperature (for example, 350 ° C.) by an appropriate heating means, the low dielectric constant film is cured by irradiating the wafer with ultraviolet rays from an ultraviolet irradiation device, and having a predetermined mechanical strength. Can be formed.
 上記のようにして低誘電率膜を得た後、さらに所望により、この低誘電率膜上に他の膜を積層したり、この低誘電率膜を処理したりする工程へと進む。 After obtaining the low dielectric constant film as described above, the process proceeds to a process of further laminating another film on the low dielectric constant film or processing the low dielectric constant film as desired.
 本発明に係る成膜装置の実施の形態を示す図5によれば、この成膜装置は、ウェハ上に低誘電率膜等のような薄膜を形成する際に使用するための塗布装置51と、図4(a)及び(b)に示す真空処理装置である真空処理装置52と、塗布装置51を用いて塗布して形成された薄膜を表面に有するウェハを真空処理室内へ搬入及び搬出するためのロード/アンロード室(L/UL室)53とを備えてなり、このロード/アンロード室53に格納されているウェハは、搬送ロボットが設置されている搬送室54を経て真空処理装置52へと搬入され、そこで薄膜を処理した後、ロード/アンロード室(L/UL室)53へ搬出される。 According to FIG. 5 showing an embodiment of a film forming apparatus according to the present invention, this film forming apparatus includes a coating apparatus 51 for use in forming a thin film such as a low dielectric constant film on a wafer, and the like. 4A and 4B, a vacuum processing apparatus 52, which is a vacuum processing apparatus, and a wafer having a thin film formed by coating using the coating apparatus 51 are carried into and out of the vacuum processing chamber. Load / unload chamber (L / UL chamber) 53 for the wafer, and the wafer stored in the load / unload chamber 53 passes through the transfer chamber 54 in which the transfer robot is installed. Then, the thin film is processed there, and then transferred to a load / unload chamber (L / UL chamber) 53.
 上記のようにして薄膜を処理した後、所望によりさらにこの膜上に他の薄膜を形成させたり、又は他の処理を行ったりする場合には、そのような薄膜形成工程や他の処理工程を行う1つ又は複数の装置55を搬送室54の周りに配置し、搬送室54内の搬送ロボットにより、搬入/搬出を行って、それぞれの処理を行うことができるように構成することができる。 After processing a thin film as described above, if another thin film is further formed on this film or other processing is performed as desired, such a thin film forming process or other processing process is performed. One or a plurality of apparatuses 55 to be performed can be arranged around the transfer chamber 54, and can be configured to be carried in / out by a transfer robot in the transfer chamber 54 to perform each processing.
 図4に示す真空処理装置について、説明の便宜上、光エネルギー源として紫外線照射装置、光透過性隔壁として紫外線透過窓である石英窓を例に挙げて説明したが、この他に、マイクロ波発生装置、赤外線照射装置、X線発生装置、レーザー発生装置、可視光発生装置等の光エネルギー源、石英窓以外のガラス材料、サファイア、CaF、MgF等の光透過性隔壁を適用しても同様の処理が可能な真空処理装置を構成できる。また、この真空処理装置について、スピンコータにより表面に低誘電率材料を塗布し低誘電率膜が形成された処理対象物を処理する装置を例として具体的に説明したが、この装置は、CVD装置等の成膜装置により低誘電率膜その他の膜が形成された処理対象物の処理に適用することも可能である。他にも、膜が形成されていない基板表面自体の処理にも適用が可能である。 The vacuum processing apparatus shown in FIG. 4 has been described by taking an ultraviolet irradiation apparatus as a light energy source and a quartz window, which is an ultraviolet transmission window as a light transmissive partition, as an example for convenience of description. Even if an optical energy source such as an infrared irradiation device, an X-ray generation device, a laser generation device, a visible light generation device, a glass material other than a quartz window, or a light-transmitting barrier such as sapphire, CaF 2 , or MgF 2 is applied. A vacuum processing apparatus capable of performing the above process can be configured. In addition, the vacuum processing apparatus has been specifically described as an example of an apparatus for processing a processing object in which a low dielectric constant material is formed on a surface by applying a low dielectric constant material using a spin coater. The present invention can also be applied to processing of a processing object on which a low dielectric constant film or other film is formed by a film forming apparatus such as the above. In addition, the present invention can be applied to the treatment of the substrate surface itself on which no film is formed.
 本発明の真空処理装置を用いて実施し得る処理方法としては、上記以外に、真空中での紫外線照射による処理として、次のような適用が可能である。例えば、(1)上記した低誘電率材料を用いた場合、空孔を導入して、低誘電率と共に低屈折率の膜を作製することができ、(2)ナノサイズパターンの石英等をレジストなどに押しつけた状態で紫外線照射(+熱)して固め、剥がしてパターン転写することにより、気泡が入らないか入り難いパターンを作製することができ、(3)紫外線照射により、基板表面の有機物を除去してクリーニングすることや、基板表面の密着性を向上せしめること等の基板表面の改質ができ、また、(4)特に大気に曝したくないものに関しては、真空一貫で紫外線照射により基板をクリーニングした後で密着性良く成膜することができる。 As a processing method that can be carried out using the vacuum processing apparatus of the present invention, in addition to the above, the following application is possible as processing by ultraviolet irradiation in vacuum. For example, (1) when the above-described low dielectric constant material is used, holes can be introduced to produce a film having a low dielectric constant and a low refractive index. (2) Nano-sized quartz or the like is resisted. It can be hardened by ultraviolet irradiation (+ heat) in a state of being pressed against the surface, peeled off, and transferred to a pattern to create a pattern in which bubbles do not enter or difficult to enter. (3) Organic matter on the substrate surface by ultraviolet irradiation The surface of the substrate can be modified by removing the substrate and improving the adhesion of the surface of the substrate. (4) For those that do not want to be exposed to the atmosphere, the substrate should be exposed to ultraviolet rays in a consistent vacuum. The film can be formed with good adhesion after cleaning.
 以下、上記した本発明の関連発明について、また、その関連発明による上記したシール構造による効果との相乗効果について説明する。説明の都合上、処理する薄膜としては低誘電率膜を例にとって説明するが、本発明と同様に、その膜に限定されるわけではない。 Hereinafter, the related invention of the present invention described above and the synergistic effect with the effect of the above-described seal structure according to the related invention will be described. For convenience of explanation, the thin film to be processed will be described by taking a low dielectric constant film as an example. However, like the present invention, the thin film is not limited to this film.
 上記関連発明の真空処理装置は、上記した本発明のシール構造に加えて、さらに、真空処理室の内部に設けられ、この真空処理室の内部及び処理対象物を加熱して、所定の温度分布に保つための熱源と、光照射装置(例えば、紫外線照射装置)からの光(例えば、紫外線等の光エネルギー源)を透過させる窓部材である光透過性隔壁(例えば、石英窓のような紫外線透過性隔壁)に対向して、真空処理室の内部に設けられた、熱源からの熱を遮断する遮断部材Aとを備えている。遮断部材以外は、本発明の真空処理装置の構成と同じであるので、詳細な説明は省略する。 In addition to the above-described seal structure of the present invention, the vacuum processing apparatus according to the related invention is further provided inside the vacuum processing chamber, and heats the inside of the vacuum processing chamber and the processing object to obtain a predetermined temperature distribution. And a light transmissive partition wall (for example, an ultraviolet light such as a quartz window) that is a window member that transmits light (for example, a light energy source such as ultraviolet light) from a light irradiation device (for example, an ultraviolet irradiation device). And a blocking member A provided inside the vacuum processing chamber to block heat from the heat source. Since the configuration other than the blocking member is the same as that of the vacuum processing apparatus of the present invention, detailed description thereof is omitted.
 これにより、上記したシール構造による効果に加えて、以下述べるような効果を達成できる。以下説明する別の真空処理装置の場合も同様である。 Thereby, in addition to the effects of the above-described seal structure, the following effects can be achieved. The same applies to another vacuum processing apparatus described below.
 すなわち、ウェハのような処理対象物が存在しない状態で、すなわち処理対象物の処理前の予備加熱として熱源により加熱を行う際に、光透過性隔壁やこの隔壁を通しての紫外線等の光エネルギー源への熱の影響を遮断部材Aで遮断することができ、処理対象物を加熱すると共に光エネルギー源からのエネルギーを与える際に、真空処理室の上記隔壁や光エネルギー源への熱の影響をなくし、必要な予備加熱だけを行うことが可能になる。また、遮断部材Aを上記隔壁に対向して設けるため、少なくとも隔壁に対する熱源からの熱を遮断することができる。さらに、光透過性隔壁に対する熱を遮断部材Aで遮断することで、この隔壁の固定部と真空処理室との熱膨張差による変形に伴うクラックの発生を防止することができる。 That is, when a processing object such as a wafer is not present, that is, when heating is performed by a heat source as preheating before processing of the processing object, a light transmitting partition or an optical energy source such as ultraviolet rays through the partition is used. Can be blocked by the blocking member A, and when the object to be processed is heated and the energy from the optical energy source is applied, the influence of the heat on the partition walls and the optical energy source in the vacuum processing chamber is eliminated. Only necessary preheating can be performed. Further, since the blocking member A is provided so as to face the partition wall, at least heat from the heat source for the partition wall can be blocked. Further, by blocking the heat to the light transmissive partition wall by the blocking member A, it is possible to prevent the occurrence of cracks due to deformation due to the difference in thermal expansion between the fixed portion of the partition wall and the vacuum processing chamber.
 また、上記真空処理装置において、真空処理室は円筒状であり、真空処理室の上部開口部に上記隔壁が天井部材として固定されて配置され、この隔壁の大気側に光照射装置が設けられ、処理対象物を支持するステージが真空処理室の内部に設けられ、このステージの下方に上記熱源が設けられ、上記遮断部材Aは円盤状に形成されてステージの上部に設けられていてもよい。 Further, in the vacuum processing apparatus, the vacuum processing chamber is cylindrical, and the partition is fixed and arranged as a ceiling member in the upper opening of the vacuum processing chamber, and a light irradiation device is provided on the atmosphere side of the partition, A stage for supporting the object to be processed may be provided inside the vacuum processing chamber, the heat source may be provided below the stage, and the blocking member A may be formed in a disk shape and provided at the top of the stage.
 このように構成することにより、上記隔壁や隔壁を通しての光照射装置への熱源からの熱の影響を遮断部材Aで遮断することができ、処理対象物を加熱すると共に光を照射するに際し、隔壁や光照射装置への熱の影響をなくし、必要な予備加熱だけを行うことができる。この隔壁としては、例えば、角型状や円盤状のものを挙げることができる。 By comprising in this way, the influence of the heat | fever from the heat source to the light irradiation apparatus through the said partition and a partition can be interrupted | blocked by the shielding member A, and when a process target is heated and irradiated with light, a partition It is possible to eliminate the influence of heat on the light irradiation device and to perform only the necessary preheating. As this partition, a square shape and a disk shape can be mentioned, for example.
 上記熱源はランプ加熱手段であっても良く、上記ステージの下部に設けられている。このように、ランプ加熱手段を用いて真空処理室の内部の温度を昇温させることで基板を加熱するので、加熱手段を基板に接触させることなく基板を加熱することができる。 The heat source may be a lamp heating means, and is provided at the lower part of the stage. Thus, since the substrate is heated by raising the temperature inside the vacuum processing chamber using the lamp heating means, the substrate can be heated without bringing the heating means into contact with the substrate.
 さらに、上記遮断部材Aには、中央部に円形の開口が形成され、主に上記隔壁の周縁部に対する熱が遮断されるように構成されていても良い。このように、中央部に円形の開口が形成された遮断部材Aを用いることで、金属製の真空処理室における上記隔壁の周縁の固定部に対する熱の影響を低減することができ、熱膨張率の差による変形により隔壁の周縁にクラックが発生することを防止して、真空処理室の上記隔壁や光照射手段への熱の影響をなくすことができる。 Further, the blocking member A may be configured such that a circular opening is formed in the center portion, and heat to the peripheral edge portion of the partition wall is mainly blocked. Thus, by using the blocking member A having a circular opening at the center, the influence of heat on the fixed portion at the periphery of the partition wall in the metal vacuum processing chamber can be reduced, and the thermal expansion coefficient It is possible to prevent cracks from being generated at the periphery of the partition wall due to the deformation due to the difference between them, and to eliminate the influence of heat on the partition wall and the light irradiation means in the vacuum processing chamber.
 さらにまた、上記遮断部材Aには、複数の小穴が形成され、前記処理室の内部の温度が維持されて熱が遮断されるように構成されていてもよい。このように、複数の小穴が形成された遮断部材Aを用いることで、真空処理室内の温度を制御して、真空処理室上部の上記隔壁や光照射装置への熱の影響をなくすことができる。 Furthermore, a plurality of small holes may be formed in the blocking member A so that the temperature inside the processing chamber is maintained and heat is blocked. As described above, by using the blocking member A in which a plurality of small holes are formed, the temperature in the vacuum processing chamber can be controlled, and the influence of heat on the partition wall and the light irradiation device above the vacuum processing chamber can be eliminated. .
 さらにまた、例えば、上記処理対象物に低誘電率膜用組成物を塗布して、低誘電率膜を形成する場合、この膜に対して光照射装置からの光を照射すると共に、上記熱源による加熱によって、この低誘電率膜を硬化処理することができる。この硬化処理の際に、真空処理室の上記隔壁や光エネルギー源への熱の影響をなくし、必要な予備加熱だけを行うことが可能になる。 Furthermore, for example, when a low dielectric constant film is formed by applying a composition for a low dielectric constant film to the object to be treated, the film is irradiated with light from a light irradiation device, and the heat source is used. The low dielectric constant film can be cured by heating. During this curing process, it is possible to eliminate the influence of heat on the partition walls and the light energy source in the vacuum processing chamber, and to perform only the necessary preheating.
 上記した遮断部材Aを備えた真空処理装置を用いて行う処理対象物の処理方法によれば、低誘電率膜用組成物が塗布された処理対象物を加熱すると共に、この低誘電率膜用組成物から得られた薄膜に対して、真空処理室の外部から紫外線等の光を照射することで、処理対象物表面に改質された薄膜を形成する処理方法において、処理対象物の処理を行う時を除き、光照射装置の照射源及び真空処理室の光透過部位に対し、真空処理室の内部を加熱する際の熱を遮断するものである。この場合、例えば低誘電率膜を硬化させて改質された薄膜を形成する際に、光透過部位や光照射処置への熱の影響をなくし、必要な予備加熱だけを行うことができる。 According to the processing method of the processing object performed using the vacuum processing apparatus provided with the blocking member A described above, the processing object coated with the low dielectric constant film composition is heated and the low dielectric constant film is used. In the processing method of forming a modified thin film on the surface of the processing object by irradiating the thin film obtained from the composition with ultraviolet light or the like from the outside of the vacuum processing chamber, the processing object is processed. Except when performing, the heat at the time of heating the inside of the vacuum processing chamber is cut off from the irradiation source of the light irradiation apparatus and the light transmission portion of the vacuum processing chamber. In this case, for example, when forming a modified thin film by curing a low dielectric constant film, it is possible to eliminate the influence of heat on the light transmission site and the light irradiation treatment, and to perform only necessary preheating.
 本発明の関連発明の成膜装置は、処理対象物に低誘電率膜用組成物を塗布する塗布装置と、この塗布装置を用いて組成物を塗布し、低誘電率膜を形成したものを搬入し、例えば硬化処理することができる上記した真空処理装置(すなわち、以下具体的に説明する図6~8に示す真空処理装置)と、塗布装置で塗布して形成された薄膜を有する処理対象物を真空処理室内へ搬入及び搬出するためのロード/アンロード室とを備えてなる。この真空処理装置は、処理工程で、真空処理室や光エネルギー源への熱の影響をなくし、必要な予備加熱だけを行うことができるものである。 A film forming apparatus according to a related invention of the present invention is a coating apparatus that applies a composition for a low dielectric constant film to a processing object, and a coating apparatus that uses the coating apparatus to form a low dielectric constant film. The above-described vacuum processing apparatus (that is, the vacuum processing apparatus shown in FIGS. 6 to 8 which will be described in detail below) that can be carried in and cured, for example, and a processing target having a thin film formed by coating with a coating apparatus And a load / unload chamber for loading and unloading objects into and from the vacuum processing chamber. This vacuum processing apparatus eliminates the influence of heat on the vacuum processing chamber and the light energy source in the processing step, and can perform only necessary preheating.
 上記した真空処理装置は、処理対象物を加熱すると共に光エネルギー源からのエネルギーを与える処理に際し、真空処理室の光透過性隔壁やエネルギー源への熱の影響をなくし、必要な予備加熱だけを行うことが可能になる。また、上記処理方法によれば、低誘電率膜を硬化させる際に、光透過部位や光照射装置への熱の影響をなくし、必要な予備加熱だけを行うことが可能になる。さらに、上記成膜装置は、低誘電率膜を硬化させる際に、真空処理室や光エネルギー源への熱の影響をなくし、必要な予備加熱だけを行うことが可能になる。 The above-described vacuum processing apparatus eliminates the influence of heat on the light-transmitting partition walls and the energy source in the vacuum processing chamber during the process of heating the object to be processed and applying energy from the light energy source, and performs only necessary preheating. It becomes possible to do. In addition, according to the above processing method, when the low dielectric constant film is cured, it is possible to eliminate the influence of heat on the light transmission region and the light irradiation device and perform only the necessary preheating. Furthermore, when the low dielectric constant film is cured, the film forming apparatus eliminates the influence of heat on the vacuum processing chamber and the light energy source, and can perform only necessary preheating.
 次に、上記した関連発明の実施の形態について、図面を参照して説明する。 Next, embodiments of the related invention described above will be described with reference to the drawings.
 図6に基づいて、改質された低誘電率膜を処理対象物上に作製する真空処理装置について具体的に説明する。図6では、上記した遮断部材Aを有する真空処理装置の一例について、その全体の側面側からの模式的断面状態を示す。なお、図6と図4とは、作図上の相違はあるが、基本的には、遮断部材の有無などの点で異なるだけであり、他の構成要素はほぼ同じである。 Referring to FIG. 6, a vacuum processing apparatus for producing a modified low dielectric constant film on a processing target will be specifically described. In FIG. 6, about the example of the vacuum processing apparatus which has the above-mentioned interruption | blocking member A, the typical cross-sectional state from the side surface of the whole is shown. Although FIG. 6 and FIG. 4 are different in drawing, they are basically different only in terms of the presence or absence of a blocking member, and the other components are substantially the same.
 図6に示すように、真空処理装置は、図4の場合と同様に、上部が開口した円筒状の金属製の真空処理室61を備えており、真空処理室61の上部には開口部62が形成されている。真空処理室61の開口部62には円盤状の石英窓63が配置され、石英窓63の下面縁部が真空処理室61の側壁上面の一部(図6では、側壁上面の縁部62a)上に固定されている。石英窓63の上面縁部に設けられた樹脂製の第1シール部材(例えば、オーリング等)64aと、真空処理室61の側壁の上面部に設けられた樹脂製の第2シール部材(例えば、オーリング等)64bと、さらに第1シール部材64a及び第2シール部材64bを押さえるための押さえ部材64であって、その縁部に突起部である鍔部材64cが設けられた押さえ部材64とを備えてなり、これにより真空処理室61を真空封止できるように構成されている。 As shown in FIG. 6, the vacuum processing apparatus includes a cylindrical metal vacuum processing chamber 61 having an open top, as in FIG. 4, and an opening 62 is formed above the vacuum processing chamber 61. Is formed. A disc-shaped quartz window 63 is disposed in the opening 62 of the vacuum processing chamber 61, and the lower surface edge of the quartz window 63 is a part of the upper surface of the side wall of the vacuum processing chamber 61 (in FIG. 6, the edge 62a of the upper surface of the side wall). It is fixed on the top. A resin-made first seal member (for example, O-ring or the like) 64a provided on the upper surface edge of the quartz window 63 and a resin-made second seal member (for example, the upper surface of the side wall of the vacuum processing chamber 61). , O-ring, etc.) 64b, and a pressing member 64 for pressing the first sealing member 64a and the second sealing member 64b, and a pressing member 64 provided with a flange member 64c as a protrusion at the edge thereof Thus, the vacuum processing chamber 61 can be vacuum-sealed.
 上記の場合、2つのシール部材64aと64bとを仕切るために、それらの間に突起部である鍔部材を設けても良い。 In the above case, in order to partition the two seal members 64a and 64b, a collar member which is a protrusion may be provided between them.
 真空処理室61の側壁には搬送口65が設けられ、搬送口65を介して処理対象物66の搬入・搬出が行われる。真空処理室61は、処理対象物を載置して支持するステージ67を備え、ステージ67は昇降自在に構成されている。ステージ67には保持部材68が設けられ、この保持部材により処理対象物66が所定の位置に規制されて保持される。 A transfer port 65 is provided in the side wall of the vacuum processing chamber 61, and the processing object 66 is carried in and out through the transfer port 65. The vacuum processing chamber 61 includes a stage 67 on which a processing target is placed and supported, and the stage 67 is configured to be movable up and down. A holding member 68 is provided on the stage 67, and the processing object 66 is regulated and held at a predetermined position by the holding member.
 ステージ67の下部には熱源となるランプ加熱手段としてランプヒータ69が設けられ、このランプヒータにより真空処理室61の内部と処理対象物66とが加熱され、所定の温度分布に保たれる。 Below the stage 67, a lamp heater 69 is provided as a lamp heating means serving as a heat source, and the inside of the vacuum processing chamber 61 and the processing object 66 are heated by this lamp heater and kept at a predetermined temperature distribution.
 真空処理室61内部にはリフレクタ70が設けられていてもよく、その場合、処理対象物66の搬送口65からの搬入・搬出の経路を避けた状態で、ステージ67がランプヒータ69と共に側方及び下方からリフレクタ70に覆われている。 A reflector 70 may be provided inside the vacuum processing chamber 61. In this case, the stage 67 and the lamp heater 69 are arranged laterally while avoiding the route for carrying in / out the processing object 66 from the carrying port 65. And it is covered with the reflector 70 from below.
 また、石英窓63の上方には紫外線照射装置71が設けられ、低誘電率膜を表面に有する処理対象物66に対し、紫外線照射装置71から石英窓63を通して紫外線が照射され、処理される。 Further, an ultraviolet irradiation device 71 is provided above the quartz window 63, and the processing object 66 having a low dielectric constant film on the surface is irradiated with ultraviolet rays from the ultraviolet irradiation device 71 through the quartz window 63 and processed.
 ステージ67より上方における真空処理室61の内壁の同一高さの複数個所に支持材72が固定されて設けられ、支持材72には遮断部材Aとしての円盤状の遮断盤73が載置されている。遮断盤73は真空処理室61を予備加熱する際に搬送口65を介して真空処理室61の内部に搬入される。この遮断盤により、ランプヒータ69により真空処理室61を昇温する際に、石英窓63及び紫外線照射装置71への熱の伝達を遮断する。 Support members 72 are fixedly provided at a plurality of positions on the inner wall of the vacuum processing chamber 61 above the stage 67, and a disc-shaped block disc 73 as a block member A is placed on the support member 72. Yes. When the vacuum processing chamber 61 is preheated, the blocking board 73 is carried into the vacuum processing chamber 61 through the transfer port 65. When the temperature of the vacuum processing chamber 61 is increased by the lamp heater 69, the heat transfer to the quartz window 63 and the ultraviolet irradiation device 71 is blocked by this blocker.
 遮断盤73は、耐熱温度が高く、熱膨張性が低く、比重が低く、安価な材料で作製され、例えば、アルミナ、SiC、SiN等のセラミックスやTi等の金属で作製される。 The breaker 73 is made of an inexpensive material having a high heat resistance, low thermal expansion, low specific gravity, and low cost. For example, the breaker 73 is made of ceramics such as alumina, SiC, SiN, or a metal such as Ti.
 上記真空処理装置では、ランプヒータ69により低誘電率膜を表面に有する処理対象物66が所定の温度(例えば、350℃)に加熱され、紫外線照射装置71から石英窓63を通して紫外線が処理対象物66上に照射される。紫外線を照射することにより、低誘電率膜を硬化せしめ、十分な機械的強度を有する低誘電率膜を処理対象物上に作製する。 In the vacuum processing apparatus, the processing object 66 having a low dielectric constant film on the surface is heated to a predetermined temperature (for example, 350 ° C.) by the lamp heater 69, and ultraviolet light is processed from the ultraviolet irradiation device 71 through the quartz window 63. 66 is irradiated. By irradiating ultraviolet rays, the low dielectric constant film is cured, and a low dielectric constant film having sufficient mechanical strength is produced on the object to be processed.
 紫外線を処理対象物に対して照射するのに先立ち、ランプヒータ69により真空処理室61を昇温して、処理室内部に設置されている冶具や処理室内を所定の温度に予備加熱する。この時、支持材72上に載置されている遮断盤73が、石英窓63及び紫外線照射装置71への熱の伝達を遮断する。これにより、石英窓63及び紫外線照射装置71が、真空処理室61を加熱するための熱の影響を受けることがなくなり、遮断盤73の下方の雰囲気の温度を必要な状態に均一に保つことができる。 Prior to irradiating the object to be processed with ultraviolet rays, the temperature of the vacuum processing chamber 61 is raised by the lamp heater 69 to preheat the jig and the processing chamber installed in the processing chamber to a predetermined temperature. At this time, the blocking board 73 placed on the support member 72 blocks the heat transfer to the quartz window 63 and the ultraviolet irradiation device 71. As a result, the quartz window 63 and the ultraviolet irradiation device 71 are not affected by the heat for heating the vacuum processing chamber 61, and the temperature of the atmosphere below the blocking plate 73 can be kept uniform in a required state. it can.
 予備加熱を実施する際に、石英窓63及び紫外線照射装置71は熱の影響を受けることがないので、過熱状態になる虞がなく、金属製の真空処理室61における石英窓63の縁部の固定部(すなわち、開口部62における側壁上面の縁部62a上の固定部)に対する熱の影響を低減することができ、熱膨張率の差に基づく変形により石英窓63の周縁にクラックが発生することが防止される。また、紫外線照射装置71が熱に曝されることがなくなり、熱損傷が生じることがなくなる。 When the preheating is performed, the quartz window 63 and the ultraviolet irradiation device 71 are not affected by heat, so there is no possibility of overheating, and the edge of the quartz window 63 in the metal vacuum processing chamber 61 is not affected. The influence of heat on the fixing portion (that is, the fixing portion on the edge portion 62a of the upper surface of the side wall in the opening 62) can be reduced, and cracks are generated at the periphery of the quartz window 63 due to deformation based on the difference in thermal expansion coefficient. It is prevented. Further, the ultraviolet irradiation device 71 is not exposed to heat, and thermal damage does not occur.
 このため、真空処理室61の予備加熱を十分に実施することが可能になり、低誘電率膜の硬化処理を効率よく行うことができる。また、紫外線照射装置71が熱に曝されることがないので、紫外線照射装置71側での熱の対策を簡素化することができる。熱源としてランプヒータ69を用いているので、熱源が処理対象物66に接触することがなく、コンタミ等が発生する虞がない。 For this reason, it becomes possible to sufficiently perform the preliminary heating of the vacuum processing chamber 61, and the curing treatment of the low dielectric constant film can be performed efficiently. Moreover, since the ultraviolet irradiation device 71 is not exposed to heat, it is possible to simplify the heat countermeasures on the ultraviolet irradiation device 71 side. Since the lamp heater 69 is used as the heat source, the heat source does not come into contact with the object to be processed 66, and there is no risk of contamination.
 従って、硬化により低誘電率膜を形成する際に、石英窓63や、紫外線照射装置71への熱の影響をなくして必要な予備加熱を行うことが可能になる。 Therefore, when the low dielectric constant film is formed by curing, it becomes possible to perform necessary preheating without the influence of heat on the quartz window 63 and the ultraviolet irradiation device 71.
 次に、図7を参照して本発明の関連発明の真空処理装置の別の例について説明する。 Next, another example of the vacuum processing apparatus according to the related invention of the present invention will be described with reference to FIG.
 図7には、真空処理装置の全体の側面側からの模式的断面状態を示してある。尚、この真空処理装置は、上記した図6に示す真空処理装置とは遮断盤の形状が異なるだけであるので、同一部材には同一符号を付して重複する説明は省略してある。 FIG. 7 shows a schematic cross-sectional state from the side of the entire vacuum processing apparatus. Since this vacuum processing apparatus is different from the above-described vacuum processing apparatus shown in FIG. 6 only in the shape of the barrier, the same members are denoted by the same reference numerals, and redundant description is omitted.
 ステージ67より上方における真空処理室61の内壁の同一高さの複数個所には支持材72が固定されて設けられ、支持材72には遮断部材Aとしての遮断盤74が載置されている。遮断盤74は、円盤状で中央部に円形の開口75が形成されている。遮断盤74は、真空処理室61を予備加熱する際に搬送口65を介して真空処理室61の内部に搬入される。この遮断盤により、ランプヒータ69により真空処理室61を昇温する際に、石英窓63、特に石英窓63の周縁部である真空処理室61の上部開口部への固定部、及び紫外線照射装置71への熱の伝達を遮断する。 Support members 72 are fixedly provided at a plurality of positions on the inner wall of the vacuum processing chamber 61 above the stage 67, and a blocking plate 74 serving as a blocking member A is placed on the support member 72. The shut-off disc 74 has a disc shape, and a circular opening 75 is formed at the center. When the vacuum processing chamber 61 is preheated, the shut-off plate 74 is carried into the vacuum processing chamber 61 through the transfer port 65. When the temperature of the vacuum processing chamber 61 is raised by the lamp heater 69 by this blocker, the quartz window 63, in particular, a fixing portion to the upper opening of the vacuum processing chamber 61 which is the peripheral portion of the quartz window 63, and an ultraviolet irradiation device The heat transfer to 71 is cut off.
 このような遮断盤74を設けることにより、予備加熱を実施する際に、石英窓63の周縁部位は熱の影響を受けることがないので、過熱状態になる虞がなく、金属製の真空処理室61の上部開口部に設置された石英窓63の周縁の固定部に対する熱の影響を大幅に低減することができ、熱膨張率の差に基づく変形により石英窓63の周縁にクラックが発生することが確実に防止される。また、遮断盤74には開口75が形成されているので、真空処理室61の全体の雰囲気を均一に昇温させることもできる。 By providing such a blocking board 74, the peripheral portion of the quartz window 63 is not affected by heat when preheating is performed, so there is no possibility of overheating, and a metal vacuum processing chamber is provided. The influence of heat on the fixed portion at the periphery of the quartz window 63 installed in the upper opening of 61 can be greatly reduced, and cracks are generated at the periphery of the quartz window 63 due to deformation based on the difference in thermal expansion coefficient. Is reliably prevented. Moreover, since the opening 75 is formed in the shut-off disc 74, the entire atmosphere of the vacuum processing chamber 61 can be raised in temperature uniformly.
 このため、石英窓63の周縁のクラック発生を防止すると同時に、真空処理室61の内部の全体に亘り加熱を均一に行うことができる。紫外線照射装置71として熱の対策が施されたものが使用されている場合、石英窓63のクラック発生の防止に特化して軽量の遮断盤74を設けることができ、石英窓63の周縁のクラック発生を確実に防止した状態で予備加熱を実施することができる。 For this reason, it is possible to prevent the generation of cracks at the periphery of the quartz window 63 and at the same time uniformly heat the entire interior of the vacuum processing chamber 61. When an ultraviolet ray irradiation device 71 with a countermeasure against heat is used, a lightweight barrier board 74 can be provided to prevent the occurrence of cracks in the quartz window 63, and cracks in the periphery of the quartz window 63 can be provided. Preheating can be performed in a state in which generation is reliably prevented.
 上記した図6及び7に示す真空処理装置では、遮断盤73、遮断盤74を支持材72に載置した例を挙げて説明したが、支持材を使用せずに、これらの遮断盤を処理対象物66の保持部材68に保持させることも可能である。また、リフレクタ70の上縁部分に載置することも可能である。 In the vacuum processing apparatus shown in FIGS. 6 and 7 described above, an example in which the blocking plate 73 and the blocking plate 74 are mounted on the support member 72 has been described. However, these blocking plates are processed without using the support member. It is also possible to hold the object 66 on the holding member 68. Further, it can be placed on the upper edge portion of the reflector 70.
 尚、遮断盤は、その形状が円盤状で外周部位の厚さが中心部位の厚さに対して厚くなった遮断盤であっても良く、外周部の厚さを厚くした遮断盤を設けることで、金属製の真空処理室61における石英窓63の周縁の固定部に対する熱の影響を確実に低減することができ、遮断盤の下側を均一に昇温させて予備加熱を実施することができる。 In addition, the breaker may be a breaker whose shape is a disk and the outer peripheral part is thicker than the thickness of the central part, and the outer peripheral part is thicker. Thus, it is possible to reliably reduce the influence of heat on the fixed portion at the periphery of the quartz window 63 in the metal vacuum processing chamber 61, and to perform preliminary heating by uniformly raising the temperature of the lower side of the barrier plate. it can.
 また、遮断盤は、その形状が円盤状で複数の小穴が形成された遮断盤であっても良く、このように小穴が形成された遮断盤を設けることで、真空処理室61の全体の雰囲気の昇温制御をより容易に行うことができる。 Further, the blocker may be a blocker having a disk shape and formed with a plurality of small holes, and by providing the blocker with the small holes formed in this way, the entire atmosphere of the vacuum processing chamber 61 is provided. Can be controlled more easily.
 次に、図8を参照して本発明の関連発明の真空処理装置のさらに別の例について説明する。 Next, still another example of the vacuum processing apparatus according to the related invention of the present invention will be described with reference to FIG.
 図8には、真空処理装置の全体の側面側からの断面状態を示してある。尚、この真空処理装置は、上記した図6及び7に示す真空処理装置とはステージの構成が異なるだけであるので、同一部材には同一符号を付して重複する説明は省略してある。 FIG. 8 shows a cross-sectional state from the side of the entire vacuum processing apparatus. Since this vacuum processing apparatus is different from the above-described vacuum processing apparatus shown in FIGS. 6 and 7 only in the configuration of the stage, the same members are denoted by the same reference numerals, and redundant description is omitted.
 図8に示すように、真空処理室61の内部にはステージ67が設けられ、ステージ67は昇降自在に構成されている。ステージ67の上面には熱源としてのホットプレート76が設けられている。ホットプレート76上には処理対象物66が直接載置され、この処理対象物の背面が所定の温度に加熱されるように構成されている。そして、図6及び7におけるランプヒータ69は設けられていない。 As shown in FIG. 8, a stage 67 is provided inside the vacuum processing chamber 61, and the stage 67 is configured to be movable up and down. A hot plate 76 as a heat source is provided on the upper surface of the stage 67. A processing object 66 is directly placed on the hot plate 76, and the back surface of the processing object is heated to a predetermined temperature. The lamp heater 69 in FIGS. 6 and 7 is not provided.
 図8に示すようなホットプレート76を備えた真空処理装置であっても、上記した図6及び7の場合と同様に、石英窓63及び紫外線照射装置71が熱の影響を受けることはない。 Even in the vacuum processing apparatus provided with the hot plate 76 as shown in FIG. 8, the quartz window 63 and the ultraviolet irradiation apparatus 71 are not affected by heat, as in the case of FIGS.
 図6~8に示す真空処理装置について、説明の便宜上、光エネルギー源として紫外線照射装置、光透過性隔壁として紫外線透過窓である石英窓、光エネルギー遮断部材として紫外線遮断部材を例に挙げて説明したが、この他に、マイクロ波発生装置、赤外線照射装置、X線発生装置、レーザー発生装置、可視光発生装置等の光エネルギー源、石英窓以外のガラス材料、サファイア、CaF、MgF等の光透過性隔壁、紫外線遮断部材以外の上記した金属、合金、酸化物、窒化物、フッ化物等からなる光エネルギー遮断部材を適用しても同様の処理が可能な真空処理装置を構成できる。 The vacuum processing apparatus shown in FIGS. 6 to 8 is described by taking an ultraviolet irradiation apparatus as a light energy source, a quartz window as an ultraviolet transmission window as a light transmissive partition, and an ultraviolet blocking member as an optical energy blocking member for convenience of explanation. However, in addition to this, light energy sources such as microwave generators, infrared irradiation apparatuses, X-ray generators, laser generators, visible light generators, glass materials other than quartz windows, sapphire, CaF 2 , MgF 2, etc. A vacuum processing apparatus capable of the same processing can be configured even by applying a light energy blocking member made of the above-described metals, alloys, oxides, nitrides, fluorides or the like other than the light transmitting partition walls and the ultraviolet blocking member.
 また、これらの真空処理装置について、スピンコータにより表面に低誘電率材料を塗布し低誘電率膜が形成された処理対象物を処理する装置として説明したが、これらの装置は、CVD装置等の成膜装置により低誘電率膜その他の膜が形成された処理対象物の処理に適用することも可能である。他にも、膜が形成されていない基板表面自体の処理にも適用可能である。 In addition, these vacuum processing apparatuses have been described as apparatuses for processing an object to be processed on which a low dielectric constant film is formed by applying a low dielectric constant material to the surface with a spin coater. However, these apparatuses are components such as a CVD apparatus. The present invention can also be applied to processing of a processing object in which a low dielectric constant film or other film is formed by a film device. In addition, the present invention can be applied to the processing of the substrate surface itself on which no film is formed.
 上記関連発明の真空処理装置を用いて実施し得る処理方法としては、上記した本発明の真空中での紫外線照射による各種処理が適用可能である。 As a processing method that can be carried out using the vacuum processing apparatus according to the related invention, various processings by ultraviolet irradiation in the vacuum according to the present invention described above can be applied.
 本発明によれば、特定のシール構造を採用することにより、樹脂製のシール部材が紫外線等の光の照射を受けないようにしたので、樹脂の劣化という問題がなくなり、樹脂の分解により生じる有機物不純物が真空処理装置内に発生して装置内部や処理対象物を汚染させることもなくなった。従って、真空処理室内で光照射により処理を行う真空処理装置を用いる各種産業分野で利用可能であり、例えば、低誘電率膜を作製する産業分野で利用可能である。 According to the present invention, by adopting a specific sealing structure, the resin sealing member is prevented from being irradiated with light such as ultraviolet rays, so that there is no problem of resin deterioration, and organic matter generated by decomposition of the resin. Impurities are not generated in the vacuum processing apparatus and contaminate the inside of the apparatus and the object to be processed. Therefore, it can be used in various industrial fields using a vacuum processing apparatus that performs processing by light irradiation in a vacuum processing chamber. For example, it can be used in an industrial field for producing a low dielectric constant film.
11 筐体               12 光透過性隔壁
13 シール部材            14 ステージ
15 ウェハ              21 筐体
22 石英窓              23 シール部材
24 紫外線照射装置          25 ステージ
26 ウェハ              31 筐体
32 石英窓              33 シール部材
34 紫外線照射装置          35 ウェハ支持ステージ
36 ウェハ              37 遮断部材
41 真空処理室            42 ウェハ
43 ステージ             44 光透過性隔壁(石英窓)
45 光照射装置(紫外線照射装置)   46a 第1シール部材
46b 第2シール部材         47 押さえ部材
47a 鍔部材             51 塗布装置
52 真空処理装置           53 ロード/アンロード室
54 搬送室              55 装置
61 真空処理室            62 開口部
62a 縁部              63 石英窓
64 押さえ部材            64a 第1シール部材
64b 第2シール部材         64c 鍔部材
65 搬送口              66 処理対象物
67 ステージ             68 保持部材
69 ランプヒータ           70 リフレクタ
71 紫外線照射装置          72 支持材
73 遮断盤              74 遮断盤
75 開口               76 ホットプレート
DESCRIPTION OF SYMBOLS 11 Case 12 Light transmissive partition 13 Seal member 14 Stage 15 Wafer 21 Case 22 Quartz window 23 Seal member 24 Ultraviolet irradiation device 25 Stage 26 Wafer 31 Housing 32 Quartz window 33 Seal member 34 Ultraviolet irradiation device 35 Wafer support stage 36 Wafer 37 Blocking member 41 Vacuum processing chamber 42 Wafer 43 Stage 44 Light transmissive partition wall (quartz window)
45 Light irradiation device (ultraviolet irradiation device) 46a First seal member 46b Second seal member 47 Holding member 47a Saddle member 51 Coating device 52 Vacuum processing device 53 Load / unload chamber 54 Transfer chamber 55 Device 61 Vacuum processing chamber 62 Opening 62a edge 63 quartz window 64 holding member 64a first seal member 64b second seal member 64c collar member 65 transport port 66 object to be processed 67 stage 68 holding member 69 lamp heater 70 reflector 71 ultraviolet irradiation device 72 support material 73 blocker 74 Barrier board 75 Opening 76 Hot plate

Claims (9)

  1. 真空処理室と、処理対象物を載置するためのステージと、該真空処理室の上部開口部を形成する側壁の上面部に固定して設置される光透過性隔壁と、該真空処理室の外部に光照射装置とを有する真空処理装置であって、該光透過性隔壁の上面縁部に設けられた樹脂製の第1シール部材と、該真空処理室の側壁の上面部の該光透過性隔壁が設置されていない部分に設けられた樹脂製の第2シール部材と、該第1シール部材及び第2シール部材の押さえ部材であって、該第1シール部材と該第2シール部材とで該真空処理室をシールする押さえ部材とを備えていることを特徴とする真空処理装置。 A vacuum processing chamber, a stage for placing an object to be processed, a light-transmitting partition wall fixed to the upper surface of the side wall forming the upper opening of the vacuum processing chamber, A vacuum processing apparatus having a light irradiation device on the outside, the first resin-made sealing member provided on the upper surface edge of the light transmissive partition, and the light transmission of the upper surface of the side wall of the vacuum processing chamber A resin-made second seal member provided in a portion where the conductive partition is not installed, and the first seal member and the pressing member for the second seal member, the first seal member and the second seal member; And a pressing member for sealing the vacuum processing chamber.
  2. 前記光照射装置が、紫外線照射装置であることを特徴とする請求項1記載の真空処理装置。 The vacuum processing apparatus according to claim 1, wherein the light irradiation apparatus is an ultraviolet irradiation apparatus.
  3. 前記押さえ部材には、さらに第1シール部材と第2シール部材とを仕切るための鍔部材が設けられていることを特徴とする請求項1又は2記載の真空処理装置。 The vacuum processing apparatus according to claim 1, wherein the pressing member is further provided with a flange member for partitioning the first seal member and the second seal member.
  4. 真空処理室と、処理対象物を載置するためのステージと、該真空処理室の上部開口部を形成する側壁の上面部に固定して設置される光透過性隔壁と、該真空処理室の外部に光照射装置とを有する真空処理装置であって、該光透過性隔壁の側面とその側面と対向している該真空処理室の側壁との間のクリアランス部分をシールするように設けられた樹脂製のシール部材と、該シール部材の押さえ部材とを備えていることを特徴とする真空処理装置。 A vacuum processing chamber, a stage for placing an object to be processed, a light-transmitting partition fixedly installed on an upper surface of a side wall forming an upper opening of the vacuum processing chamber, and a vacuum processing chamber A vacuum processing apparatus having a light irradiation device on the outside, provided to seal a clearance portion between a side surface of the light-transmitting partition and a side wall of the vacuum processing chamber facing the side surface A vacuum processing apparatus comprising a resin seal member and a pressing member for the seal member.
  5. 真空処理室内に載置された表面に膜が形成された処理対象物に対して、光照射装置から真空処理室の上部開口部を形成する側壁の上面部に固定して設置された光透過性隔壁を通して光を照射し、該処理対象物を処理する際に、該光透過性隔壁の上面縁部に設けられた樹脂製の第1シール部材と、該真空処理室の側壁の上面部の該光透過性隔壁が設置されていない部分に設けられた樹脂製の第2シール部材と、該第1シール部材及び第2シール部材の押さえ部材であって、該第1シール部材と該第2シール部材とで該真空処理室をシールする押さえ部材とを備えているように構成されてなる該光透過性隔壁を通して光照射して該処理対象物上の膜を処理することを特徴とする処理対象物の処理方法。 Light transmissivity that is fixedly installed on the upper surface of the side wall that forms the upper opening of the vacuum processing chamber from the light irradiation device with respect to the processing target having a film formed on the surface placed in the vacuum processing chamber When processing the object to be processed by irradiating light through the partition wall, a resin-made first seal member provided on the upper surface edge of the light transmissive partition wall and the upper surface portion of the side wall of the vacuum processing chamber A resin-made second seal member provided in a portion where the light transmissive partition wall is not installed, and the first seal member and the pressing member for the second seal member, the first seal member and the second seal An object to be processed by irradiating light through the light-transmitting partition configured to include a pressing member that seals the vacuum processing chamber with a member. How to handle things.
  6. 前記光照射装置が、紫外線照射装置であることを特徴とする請求項5記載の処理対象物の処理方法。 6. The processing method of a processing object according to claim 5, wherein the light irradiation device is an ultraviolet irradiation device.
  7. 前記膜が、低誘電率膜であることを特徴とする請求項5又は6記載の処理対象物の処理方法。 The method for processing a processing object according to claim 5 or 6, wherein the film is a low dielectric constant film.
  8. 処理対象物上に膜を形成する際に使用するための塗布装置と、請求項1~4のいずれか1項に記載の真空処理装置と、該塗布装置を用いて塗布し、形成された膜を有する処理対象物を真空処理室内へ搬入及び搬出するためのロード/アンロード室とを備えたことを特徴とする成膜装置。 A coating apparatus for use in forming a film on the object to be processed, a vacuum processing apparatus according to any one of claims 1 to 4, and a film formed by coating using the coating apparatus A film forming apparatus comprising: a load / unload chamber for loading and unloading a processing object having the above into and from a vacuum processing chamber.
  9. 前記膜が、低誘電率膜であることを特徴とする請求項8記載の成膜装置。 The film forming apparatus according to claim 8, wherein the film is a low dielectric constant film.
PCT/JP2011/061087 2010-05-18 2011-05-13 Vacuum processing apparatus, method for processing object to be processed, and film forming apparatus WO2011145530A1 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015098345A1 (en) * 2013-12-27 2015-07-02 ウシオ電機株式会社 Light irradiation device
CN111989201A (en) * 2019-03-22 2020-11-24 伊利诺斯工具制品有限公司 Vacuum system for epoxy resin mounting of material samples

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI650837B (en) * 2017-09-25 2019-02-11 台灣積體電路製造股份有限公司 Process equipment and assembly method thereof
CN109559965B (en) * 2017-09-25 2021-05-14 台湾积体电路制造股份有限公司 Processing equipment and assembling method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002066300A (en) * 2000-08-30 2002-03-05 Keio Gijuku Simple vacuum window frame using quick coupling and vacuum device
JP2008124224A (en) * 2006-11-10 2008-05-29 Tokyo Ohka Kogyo Co Ltd Method of forming coating

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3582584B2 (en) * 1999-09-14 2004-10-27 東京エレクトロン株式会社 Substrate processing method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002066300A (en) * 2000-08-30 2002-03-05 Keio Gijuku Simple vacuum window frame using quick coupling and vacuum device
JP2008124224A (en) * 2006-11-10 2008-05-29 Tokyo Ohka Kogyo Co Ltd Method of forming coating

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015098345A1 (en) * 2013-12-27 2015-07-02 ウシオ電機株式会社 Light irradiation device
JP2015126162A (en) * 2013-12-27 2015-07-06 ウシオ電機株式会社 Light irradiation device
CN111989201A (en) * 2019-03-22 2020-11-24 伊利诺斯工具制品有限公司 Vacuum system for epoxy resin mounting of material samples

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