JPH06196540A - Vacuum device - Google Patents

Vacuum device

Info

Publication number
JPH06196540A
JPH06196540A JP34598792A JP34598792A JPH06196540A JP H06196540 A JPH06196540 A JP H06196540A JP 34598792 A JP34598792 A JP 34598792A JP 34598792 A JP34598792 A JP 34598792A JP H06196540 A JPH06196540 A JP H06196540A
Authority
JP
Japan
Prior art keywords
wafer
condensation
evacuation
processed
vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP34598792A
Other languages
Japanese (ja)
Inventor
Azusa Shimamura
あずさ 島村
Nobuo Tsumaki
伸夫 妻木
Toshio Masuda
俊夫 増田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP34598792A priority Critical patent/JPH06196540A/en
Publication of JPH06196540A publication Critical patent/JPH06196540A/en
Pending legal-status Critical Current

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PURPOSE:To prevent the contamination of a wafer induced by particles generated by the condensation of aqueous vapor during vacuum exhaust operation by installing a substrate to be processed, such as a wafer to a spot which is not subject to the condensation of aqueous vapor. CONSTITUTION:After a wafer 1 is loaded on a sample mount 8 in an auxiliary exhaust vacuum chamber 4 and a take out and take in port 9 is closed, a sample mount drive device 13, which moves up and down the sample mount 8, is operated to move the sample mount 8 where the wafer 1 is loaded during vacuum exhaust. The distance between the wafer 1 and the wall surface of the auxiliary exhaust vacuum chamber 4 is specified to be within 25mm during this operation. Since the heat transfer from the wall surface prevents a drop in the temperature of a space to be processed, the condensation of aqueous vapor induced by temperature drop accompanied by insulation expansion during vacuum exhaust operation, is not produced easily in a space 12 on a surface to be processed so that it may be possible to prevent the contamination of the wafer induced by condensed water drops or ice.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、ウエハ等の処理基板を
搬入し、予備排気を行うための予備排気用真空室を備え
ている真空装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum apparatus having a vacuum chamber for preliminary exhaust for carrying in a processed substrate such as a wafer and performing preliminary exhaust.

【0002】[0002]

【従来の技術】従来の装置では、予備排気用真空室内で
真空排気時、大気開放時あるいはウエハ搬送時に、搬送
部の機械的摩擦等により塵埃が発生し、塵埃の巻き上げ
がおこってウエハに付着するのを防止するため、特開昭
62−209825号公報に記載されているように、真空排気
時,大気開放時あるいはウエハ搬送時に、ウエハ等の被
処理基板上にカバーをかけるといった方法がとられてい
た。
2. Description of the Related Art In a conventional apparatus, dust is generated due to mechanical friction of a transfer part during vacuum evacuation in a preliminary exhaust vacuum chamber, when opening to the atmosphere, or when a wafer is transferred, and the dust is rolled up and adheres to the wafer. In order to prevent the
As described in Japanese Laid-Open Patent Publication No. 62-209825, a method of covering a substrate to be processed such as a wafer with a cover during evacuation, opening to the atmosphere, or wafer transfer has been used.

【0003】[0003]

【発明が解決しようとする課題】しかし、上記従来技術
は、真空排気時の巻き上げ塵埃の付着防止に関するもの
で、真空排気時に起きる水蒸気の凝縮の影響について
は、考慮がなされておらず、水蒸気の凝縮の際に核とな
る微細なごみによる汚染、また、水分そのものの付着に
よるウエハ汚染が生じるという問題がある。
However, the above-mentioned prior art is concerned with the prevention of adhering dust that is wound up during evacuation, and the influence of condensation of water vapor that occurs during evacuation is not taken into consideration. When condensed, there is a problem that contamination is caused by fine dust that serves as a core, and wafer contamination is caused by adhesion of water itself.

【0004】本発明の目的は、ウエハ等の処理基板を水
蒸気の凝縮の影響のないところに設置することにより、
真空排気時の水蒸気の凝縮で発生する粒子によるウエハ
の汚染を防止できる真空装置を提供することにある。
An object of the present invention is to install a processing substrate such as a wafer in a place where there is no influence of condensation of water vapor.
It is an object of the present invention to provide a vacuum device capable of preventing wafer contamination by particles generated by condensation of water vapor during vacuum evacuation.

【0005】[0005]

【課題を解決するための手段】上記目的を達成するため
に、本発明は、真空排気時にウエハ等の被処理基板を、
水蒸気の凝縮の起こりにくい壁面付近に、設置又は移動
させる構造をもつ。
In order to achieve the above object, the present invention provides a substrate to be processed such as a wafer during vacuum evacuation.
It has a structure to be installed or moved near the wall surface where water vapor does not easily condense.

【0006】[0006]

【作用】本発明は、真空排気時にウエハ等の被処理基板
を、断熱膨張による温度低下が小さく、水蒸気凝縮の起
こりにくい壁面付近に、設置又は移動させるため、ウエ
ハ等の処理基板は汚染されにくい。
According to the present invention, the substrate to be processed such as a wafer is installed or moved near the wall surface where the temperature drop due to adiabatic expansion is small and water vapor condensation is less likely to occur during vacuum exhaust, so that the processed substrate such as a wafer is less likely to be contaminated. .

【0007】[0007]

【実施例】以下、本発明の実施例を図により説明する。Embodiments of the present invention will be described below with reference to the drawings.

【0008】図1は本発明の真空処理装置の真空排気法
の実施例を示したものである。図において、1はウエハ
等の被処理基板、2はあらかじめ高真空に保たれた処理
室、3は処理室の排気口、4はウエハ等の被処理基板を
処理室へ処理室内の真空を破ることなく搬出,搬入を行
うための予備排気用真空室、5は予備排気用真空室の排
気口、6は予備排気用真空室のガス導入口、7は処理室
と予備排気用真空室との間を仕切るゲートバルブ、8は
被処理基板を載せる試料台、9は被処理基板の搬出,搬
入口である。
FIG. 1 shows an embodiment of the vacuum evacuation method of the vacuum processing apparatus of the present invention. In the figure, 1 is a substrate to be processed such as a wafer, 2 is a processing chamber that is kept in a high vacuum in advance, 3 is an exhaust port of the processing chamber, 4 is a substrate to be processed such as a wafer, and the vacuum in the processing chamber is broken. For pre-exhaust vacuum chamber for carrying out and carrying in without carrying out, 5 is an exhaust port of the pre-exhaust vacuum chamber, 6 is a gas inlet of the pre-exhaust vacuum chamber, and 7 is a processing chamber and a pre-exhaust vacuum chamber. A gate valve for partitioning the space, 8 is a sample stage on which the substrate to be processed is placed, and 9 is a carry-in / carry-in port of the substrate to be processed.

【0009】このように構成された装置で、あらかじめ
ゲートバルブ7は閉じられ、処理室2は排気口3より真
空排気され高真空に保たれている。ウエハ1は搬出,搬
入口9より予備排気用真空室4内の試料台8にのせら
れ、搬出,搬入口9が閉じられる。ウエハ1は、予備排
気用真空室4の壁面に対向しており、ウエハ1と壁面の
間隔は、25mm以内とする。次に排気口5より真空排気
を行う。
In the apparatus thus constructed, the gate valve 7 is closed in advance, and the processing chamber 2 is evacuated from the exhaust port 3 to maintain a high vacuum. The wafer 1 is loaded and unloaded from the loading / unloading port 9 on the sample table 8 in the preliminary exhaust vacuum chamber 4, and the loading / unloading port 9 is closed. The wafer 1 faces the wall surface of the pre-evacuation vacuum chamber 4, and the distance between the wafer 1 and the wall surface is within 25 mm. Next, vacuum exhaust is performed from the exhaust port 5.

【0010】図2は本発明の動作原理を示す特性図で、
壁面からウエハまでの距離と、断熱膨張によって低下す
る温度が到達する到達最低温度との関係を示したもので
ある。この図2により壁面から約25mm以内の位置で
は、温度が低下しにくいことがわかる。よって、ウエハ
1の処理面を予備排気用真空室4の壁面から、25mm以
内の距離にすると、壁面からの伝熱により処理面上空間
12の温度が低下しにくいため、真空排気時の断熱膨張
にともなう温度低下による水蒸気凝縮が処理面上の空間
12で生じにくく、ウエハ1の凝縮した水滴、あるいは
氷による汚染は防止される。
FIG. 2 is a characteristic diagram showing the operating principle of the present invention.
It shows the relationship between the distance from the wall surface to the wafer and the minimum temperature reached by the temperature lowered by adiabatic expansion. From FIG. 2, it can be seen that the temperature does not easily drop at a position within about 25 mm from the wall surface. Therefore, if the processing surface of the wafer 1 is within 25 mm from the wall surface of the vacuum chamber 4 for preliminary evacuation, the temperature of the space 12 above the processing surface is less likely to decrease due to heat transfer from the wall surface, and adiabatic expansion during vacuum evacuation is performed. Condensation of water vapor due to the temperature decrease due to the temperature decrease is unlikely to occur in the space 12 on the processing surface, and the water droplets condensed on the wafer 1 or contamination by ice is prevented.

【0011】図3は、本装置の第2の実施例を示したも
のである。ウエハ1が試料台8に載せられ、搬出,搬入
口9が閉じられた後、真空排気を行う際に、試料台8を
上下する試料台駆動装置13により、ウエハ1を載せた
試料台8を上昇させる。この時、ウエハ1と予備排気用
真空室4の壁面の距離を25mm以内とすると、第1の実
施例と同様に、壁面からの伝熱により処理面上の空間1
2の温度が低下しにくいため、水蒸気の凝縮が生じにく
く、ウエハ1の凝縮した水滴、あるいは氷による汚染は
防止される。
FIG. 3 shows a second embodiment of this device. After the wafer 1 is placed on the sample table 8 and the carry-out / in port 9 is closed, when the vacuum exhaust is performed, the sample table drive device 13 for moving the sample table 8 up and down moves the sample table 8 on which the wafer 1 is placed. To raise. At this time, if the distance between the wafer 1 and the wall surface of the pre-evacuation vacuum chamber 4 is within 25 mm, the space 1 on the processing surface is transferred by heat transfer from the wall surface, as in the first embodiment.
Since the temperature of 2 is unlikely to drop, the condensation of water vapor is less likely to occur, and the water droplets condensed on the wafer 1 or contamination by ice is prevented.

【0012】図4は、本装置の第3の実施例を示したも
のである。第1の実施例および第2の実施例において、
予備排気用真空室4の壁面あるいは、試料台8を加熱す
る手段14,15をもち、ウエハの処理面上の空間12
を温めることにより、真空排気の際に、水蒸気の凝縮に
よる粒子の発生がなくなり、ウエハ等の処理基板の汚染
を防止する。
FIG. 4 shows a third embodiment of this device. In the first and second embodiments,
A space 12 on the processing surface of the wafer having means 14 and 15 for heating the wall surface of the vacuum chamber 4 for preliminary evacuation or the sample table 8.
By heating, the generation of particles due to condensation of water vapor is eliminated during evacuation, and contamination of the processed substrate such as a wafer is prevented.

【0013】図5は、本装置の第4の実施例を示したも
のである。ウエハ1が搬出,搬入口9より予備排気用真
空室4内の試料台8にのせられ、搬出,搬入口9が閉じ
られた後、カバー駆動装置16により、ヒータを内蔵し
ているカバー17をウエハ1との隙間ぎりぎりまで下
げ、排気口5より真空排気を行う。ウエハ1の処理面上
の空間12は温められ、温度が十分低下しないので、凝
縮が起こらず、ウエハの汚染は防止される。
FIG. 5 shows a fourth embodiment of the present apparatus. After the wafer 1 is unloaded and loaded from the loading port 9 onto the sample stage 8 in the pre-evacuation vacuum chamber 4 and the loading and unloading port 9 is closed, the cover driving device 16 removes the cover 17 containing the heater. The gap between the wafer 1 and the wafer 1 is lowered to the utmost, and vacuum exhaust is performed from the exhaust port 5. Since the space 12 on the processing surface of the wafer 1 is warmed and the temperature does not drop sufficiently, condensation does not occur and wafer contamination is prevented.

【0014】図6は、本装置の第5の実施例を示したも
のである。図において、18は赤外放射源、19は反射
板である。真空排気を行う際に、予備排気用真空室4内
に赤外線を放射し、反射板で反射させることにより、ウ
エハ1の処理面上に赤外線ネットを形成すると、処理面
上の空間12の温度低下が抑えられ、水蒸気の凝縮が起
こらないため、凝縮によるウエハの汚染を防止する。
FIG. 6 shows a fifth embodiment of the present apparatus. In the figure, 18 is an infrared radiation source and 19 is a reflector. When the vacuum exhaust is performed, infrared rays are radiated into the preliminary exhaust vacuum chamber 4 and are reflected by the reflection plate to form an infrared net on the processing surface of the wafer 1. When the infrared net is formed on the processing surface, the temperature of the space 12 on the processing surface decreases. Is suppressed and the condensation of water vapor does not occur, so that the contamination of the wafer due to the condensation is prevented.

【0015】図7は、本装置の第6の実施例を示したも
のである。図において、20はマイクロ波発生装置であ
る。真空排気を行う際に、予備排気用真空室4内にマイ
クロ波を発生させて、これを水の励起周波数に設定する
ことにより、真空排気時の断熱膨張による温度低下にと
もなう水蒸気凝縮で発生する水滴、あるいは氷によるウ
エハの汚染を防止する。
FIG. 7 shows a sixth embodiment of the present apparatus. In the figure, 20 is a microwave generator. At the time of vacuum evacuation, microwaves are generated in the preliminary evacuation vacuum chamber 4 and set to the excitation frequency of water, so that water vapor condensation occurs due to a temperature drop due to adiabatic expansion during vacuum evacuation. Prevents wafer contamination from water droplets or ice.

【0016】図8は、本装置の第7の実施例を示したも
のである。図において、21は試料台回転機構である。
ウエハ1が搬出,搬入口9より予備排気用真空室4内の
試料台8にのせられ、搬出,搬入口9が閉じられた後、
試料台8を試料台回転機構21により回転させる。ウエ
ハ1をたてに設置(図示)、あるいはウエハ1の処理面
を下向きに設置することにより、水蒸気の凝縮で発生
し、沈降してくる粒子が処理面に付着しにくくなり、ウ
エハの汚染は防止される。
FIG. 8 shows a seventh embodiment of the present apparatus. In the figure, 21 is a sample stage rotating mechanism.
After the wafer 1 is loaded and unloaded from the loading port 9 and placed on the sample table 8 in the pre-evacuation vacuum chamber 4 and the loading and unloading port 9 is closed,
The sample table 8 is rotated by the sample table rotating mechanism 21. By placing the wafer 1 vertically (illustrated) or by setting the processing surface of the wafer 1 downward, particles that are generated by condensation of water vapor and settle down are less likely to adhere to the processing surface, and the contamination of the wafer is prevented. To be prevented.

【0017】[0017]

【発明の効果】本発明によれば、予備排気用真空室内で
真空排気時に、ウエハ等の処理面上の空間で、水蒸気の
凝縮を生じることがないため、あるいは水蒸気の凝縮で
粒子が発生しても、これがウエハ上に付着しにくいの
で、真空排気時の水蒸気の凝縮で発生する粒子(水滴,
氷)によるウエハの汚染を防止できる。
According to the present invention, when evacuation is performed in the pre-evacuation vacuum chamber, water vapor does not condense in the space above the processing surface of the wafer or the like, or particles are generated by the water vapor condensation. However, since it does not easily adhere to the wafer, particles (water droplets, etc.) generated by condensation of water vapor during vacuum evacuation
Wafer contamination due to ice can be prevented.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明第1の実施例の側面図。FIG. 1 is a side view of a first embodiment of the present invention.

【図2】本発明の動作原理を示す特性図。FIG. 2 is a characteristic diagram showing the operating principle of the present invention.

【図3】本発明第2の実施例の側面図。FIG. 3 is a side view of the second embodiment of the present invention.

【図4】本発明第3の実施例の側面図。FIG. 4 is a side view of the third embodiment of the present invention.

【図5】本発明第4の実施例の側面図。FIG. 5 is a side view of the fourth embodiment of the present invention.

【図6】本発明第5の実施例の上面図。FIG. 6 is a top view of the fifth embodiment of the present invention.

【図7】本発明第6の実施例の側面図。FIG. 7 is a side view of the sixth embodiment of the present invention.

【図8】本発明第7の実施例の側面図。FIG. 8 is a side view of the seventh embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1…ウエハ等の被処理基板、2…処理室、3…処理室の
排気口、4…予備排気用真空室、5…予備排気用真空室
の排気口、6…予備排気用真空室のガス導入口、7…ゲ
ートバルブ、8…試料台、9…被処理基板の搬出,搬入
口。
DESCRIPTION OF SYMBOLS 1 ... Substrate to be processed such as wafer, 2 ... Processing chamber, 3 ... Processing chamber exhaust port, 4 ... Pre-evacuation vacuum chamber, 5 ... Pre-evacuation vacuum chamber exhaust port, 6 ... Pre-evacuation vacuum chamber gas Introducing port, 7 ... Gate valve, 8 ... Sample table, 9 ... Unloading and carrying-in port of substrate to be processed.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】ウエハ等の被処理基板を搬入し、予備排気
を行うための予備排気用真空室を備えた真空装置におい
て、真空排気時に、上記ウエハ等の処理面が上記予備排
気用真空室の壁面に対向し、そのすき間が25mm以内で
ある構造を持つことを特徴とする真空装置。
1. A vacuum apparatus equipped with a pre-evacuation vacuum chamber for carrying in a substrate to be processed such as a wafer and performing pre-evacuation, wherein the processing surface of the wafer or the like is in the pre-evacuation vacuum chamber during vacuum evacuation. A vacuum device characterized by having a structure facing the wall surface of, and having a gap within 25 mm.
JP34598792A 1992-12-25 1992-12-25 Vacuum device Pending JPH06196540A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP34598792A JPH06196540A (en) 1992-12-25 1992-12-25 Vacuum device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34598792A JPH06196540A (en) 1992-12-25 1992-12-25 Vacuum device

Publications (1)

Publication Number Publication Date
JPH06196540A true JPH06196540A (en) 1994-07-15

Family

ID=18380368

Family Applications (1)

Application Number Title Priority Date Filing Date
JP34598792A Pending JPH06196540A (en) 1992-12-25 1992-12-25 Vacuum device

Country Status (1)

Country Link
JP (1) JPH06196540A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4868802A (en) * 1986-07-28 1989-09-19 Kabushiki Kaisha Toshiba Magnetooptic recording and erasing head which performs biasing, tracking and focusing
JP2008041719A (en) * 2006-08-01 2008-02-21 Tokyo Electron Ltd Intermediate conveyance chamber, exhaust method thereof, and substrate processing system
US8113757B2 (en) 2006-08-01 2012-02-14 Tokyo Electron Limited Intermediate transfer chamber, substrate processing system, and exhaust method for the intermediate transfer chamber
KR20220132438A (en) 2021-03-23 2022-09-30 시바우라 메카트로닉스 가부시끼가이샤 Plasma processing apparatus, and method of plasma processing

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4868802A (en) * 1986-07-28 1989-09-19 Kabushiki Kaisha Toshiba Magnetooptic recording and erasing head which performs biasing, tracking and focusing
JP2008041719A (en) * 2006-08-01 2008-02-21 Tokyo Electron Ltd Intermediate conveyance chamber, exhaust method thereof, and substrate processing system
US8113757B2 (en) 2006-08-01 2012-02-14 Tokyo Electron Limited Intermediate transfer chamber, substrate processing system, and exhaust method for the intermediate transfer chamber
KR20220132438A (en) 2021-03-23 2022-09-30 시바우라 메카트로닉스 가부시끼가이샤 Plasma processing apparatus, and method of plasma processing

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