201209915 六、發明說明： 【發明所屬之技術領域】 本發明，係有關於真空處理裝置、處理對象物之處理 方法、以及成膜裝置’特別是有關於具備有以不讓用來密 封光透過性隔壁之密封構件受到紫外線照射的方式所設計 的密封構造之真空處理裝置、使用此真空處理裝置之處理 對象物之處理方法、以及具備有此真空處理裝置之成膜裝 置。 【先前技術】 隨著半導體元件之細微化、高積體化之進行，係有必 要對於訊號傳輸延遲或消耗電力的增大作抑制。因此，爲 了降低配線間之電容的目的，作爲配線膜，係開發有使用 由低介電率材料所成之層間絕緣膜的技術。 作爲製作低介電率膜之技術，係週知有：藉由旋轉塗 布器而將用以製作層間絕緣膜之低介電率材料（例如， Low-k材料）塗布在處理對象物上以形成低介電率膜，並 在加熱處理對象物的同時而對於低介電率膜照射紫外線來 使其硬化，而製作出具備有充分之機械性強度的低介電率 膜（例如，參考專利文獻1 )。 又，亦週知有：藉由CVD裝置而在處理對象物上堆積 低介電率膜，並在加熱處理對象物的同時而對於堆積了的 低介電率膜照射紫外線來使其硬化：而在處理對象物上製 作出具備有充分之機械性強度的低介電率膜（例如，參考 專利文獻2 )。 -5- 201209915 在如同上述一般而製作低介電率膜的情況時，照射紫 外線而使其硬化之工程，係使用具備有將處理對象物加熱 之機構以及對於真空處理室內之處理對象物照射紫外線之 機構（紫外線照射裝置）的真空處理裝置來實施之。此紫 外線照射裝置，係亦有被設置在真空處理裝置之外部者， 於此情況，係在真空處理室之上部的開口部處固定設置紫 外線透過窗（例如石英窗等），並構成爲使紫外線通過此 透過窗來照射至被載置於處理室內之處理對象物上。當將 此紫外線透過窗固定並進行真空密封的情況時，多會有使 用樹脂製之密封構件的情況，但是，係並不存在有針對此 密封構件之劣化而作了考慮的技術。 如同上述一般，在爲了藉由紫外線照射等之光照射來 對於處理對象物之表面進行處理所使用的真空處理裝置中 ，係使用由石英所成之光透過性隔壁，並通過該隔壁來進 行光照射。此石英，由於係爲硬且塑性爲強之材料，因此 ，一般而言，作爲在真空處理裝置處設置光透過性隔壁的 情況時之密封構件，係並非使用如同金屬墊片一般之由硬 的材料所成者，而是使用如同〇形環或者是TEFLON (登記 商標）環一般之由柔軟且彈性爲強的樹脂製之材料所成者 。此種密封構件，於多數的情況中，係在構成如圖1中所 示一般之真空處理裝置的框體11之上部且位於光透過性隔 壁12之緣部的下側處，而被設置在真空側處，並主要藉由 施加在光透過性隔壁12處之大氣壓來將光透過性隔壁12推 壓於樹脂製的密封構件1 3上而使其變形，來進行密封。於 圖1中，14係爲晶圓支持平台，15係爲處理對象物之晶圓 201209915 但是’當使用設置在真空處理裝置之外部處的紫外線 照射裝置’而通過被設置在此裝置之上方處的身爲藉由上 述樹脂製材料而作了真空密封之光透過性隔壁的石英窗， 來對於被載置在裝置內之處理對象物進行紫外線照射處理 之真空處理裝置的情況時，係存在著下述一般的問題。 例如’若是對於圖2中所示一般之具備有框體21和被 設置在其之上部的石英窗22以及在石英窗22和框體21的上 部之間而被設置於真空側處的密封構件2 3 (例如〇形環等 )之與圖1之情況相同的而被作了密封之真空處理裝置， 來從設置在此裝置之外部的上方處之像是紫外線燈管之類 的紫外線照射裝置24，而通過石英窗22來對於被載置在平 台25上之處理對象物的晶圓26上照射紫外線，則不僅是晶 圓26 ’在樹脂製之密封構件23處亦會被照射有紫外線。其 結果’樹脂中之碳-碳鍵結等的鍵結係會經由紫外線而被 切斷’樹脂會被分解’並造成劣化的問題。進而，由於在 真空處理裝置內’會產生起因於樹丨旨之分解所導致的有機 物之雜質’因此’亦會有對於裝置內部或者是處理對象物 造成污染的問題。 在上述圖2所示之真空裝置中，若是將紫外線照射裝 置設置在裝置內部’則由於亦不會有使用石英窗的必要， 因此，係不會發生上述一般的問題但是，從由於放電所 導致之裝置內部的雜質污染對策之觀點，或者是從裝置之 維修性爲差之觀點來看，係以將紫外線照射裝置設置在真 空處理裝置之外部爲理想。 201209915 又，作爲上述問題點之對策，於與圖2相同之真空處 理裝置中，亦可考慮有如同圖3中所示一般，藉由在設置 於框體3 1之上部處的石英窗32之大氣側處，設置將紫外線 作一部份遮斷之遮斷構件3 7，來構成爲不會使紫外線照射· 至樹脂製之密封構件（例如Ο形環等）一般的方法。於圖3 中，34係爲紫外線照射裝置，35係爲晶圓支持平台，36係 爲晶圓。 於此情況，爲了不使紫外線照射到密封構件33，係有 必要將身爲光透過性隔壁之石英窗32的相對應之面積作遮 斷。但是，由於石英窗32係需要具備能夠耐住大氣壓之壓 力的厚度，因此，隨著遮斷面積之增大，紫外線透過面積 係減少，而到達身爲處理對象物之晶圓36上的紫外線之光 強度係降低，而有著使照射光強度分布惡化的問題。 例如，如圖3中所示一般，爲了設置遮斷構件3 7來成 爲不會使紫外線照射至密封構件33處，通過石英窗32之紫 外線’係成爲線A以及B的範圍內，到達晶圓36上之紫外線 的光強度係降低。又，若是欲將紫外線透過面積增大，而 將框體3 1和石英窗3 2作尺寸增大，則不但是會使成本增加 ’並且爲了使石英窗3 2相對於大氣壓而維持充分的強度， 亦需要將其之厚度增加，而使得應遮斷之面積更進而增大 ’而造成到達晶圓36上之紫外線的光強度更進一步降低的 問題。 〔先前技術文獻〕 〔專利文獻〕 〔專利文獻1〕日本特開2008-4628號公報 201209915 〔專利文獻2〕日本特開2006- 1 655 73號公報 【發明內容】 〔發明所欲解決之課題〕 本發明之課題，係在於解決上述之問題點，並提供一 種具備有成爲不會使樹脂製之密封構件受到如同紫外線照 射一般的光之照射的密封構造之真空處理裝置、和使用此 裝置的處理對象物之處理方法、以及具備有此真空處理裝 置之成膜裝置。 〔用以解決課題之手段〕 本發明之真空處理裝置，係具備有用以載置處理對象 物之平台、和被固定設置在形成該真空處理室之上部開口 部的側壁之上面部處的光透過性隔壁，並在該真空處理室 之外部具備有光照射裝置，該真空處理裝置，其特徵爲， 具備有：樹脂製之第1密封構件，係被設置在該光透過性 隔壁之上面緣部處；和樹脂製之第2密封構件，係被設置 在該真空處理室之側壁的上面部之並未被設置有該光透過 性隔壁的部分處；和推壓構件，係身爲該第1密封構件以 及第2密封構件之推壓構件，並藉由該第1密封構件和該第 2密封構件來將該真空處理室密封。 在上述真空處理裝置中，係具備有下述特徵：亦即是 ，光照射裝置，係爲紫外線照射裝置。 在上述之真空處理裝置中，係具備有下述特徵：亦即 是，在推壓構件處’係更進而被設置有用以區隔第1密封 -9- 201209915 構件和第2密封構件之鍔構件。 又，本發明之真空處理裝置，係具備有真空處理室、 和用以載置處理對象物之平台、和被固定設置在形成該真 空處理室之上部開口部的側壁之上面部處的光透過性隔壁 ，並在該真空處理室之外部具備有光照射裝置，該真空處 理裝置，其特徵爲，具備有：樹脂製之密封構件，係以將 該光透過性隔壁之側面和與該側面相對向的該真空處理室 之側壁間的空隙部分作密封的方式而被設置；和該密封構 件之推壓構件。 本發明之處理對象物之處理方法，其特徵爲：係對於 被載置在真空處理室內之於表面上被形成有膜的處理對象 物，而從光照射裝置來通過被固定設置在形成真空處理室 之上部開口部的側壁之上面部處的光透過性隔壁而照射光 ，並在對於該處理對象物進行處理時，通過以具備有：被 設置在該光透過性隔壁之上面緣部處之樹脂製之第1密封 構件；和被設置在該真空處理室之側壁的上面部之並未被 設置有該光透過性隔壁的部分處之樹脂製之第2密封構件 ;以及身爲該第1密封構件以及第2密封構件之推壓構件並 藉由該第1密封構件和該第2密封構件來將該真空處理室密 封之推壓構件的方式’所構成之該光透過性隔壁’來照射 光並對於該處理對象物上之膜進行處理。 在上述處理對象物之處理方法中’係具備有下述特徵 :亦即是，光照射裝置，係爲紫外線照射裝置。 在上述處理對象物之處理方法中’係具備有下述特徵 :亦即是，膜係爲低介電率膜。 • 10- 201209915 本發明之成膜裝置，其特徵爲，具備有：當在處理對 象物上形成膜時而使用之塗布裝置；和上述真空處理裝置 ;和用以將具備有使用該塗布裝置而進行塗布所形成的膜 之處理對象物對於真空處理室內進行搬入搬出之裝載/卸 下室。 在上述成膜裝置中’係具備有下述特徵：亦即是，使 用塗布裝置所形成之膜，係爲低介電率膜。 〔發明之效果〕 若依據本發明’則係能夠得到下述之效果：亦即是， 樹脂製之密封構件係成爲不會受到紫外線等之光能量的照 射’其結果，係成爲不會有樹脂中之碳-碳鍵結等之鍵結 被紫外線等之光能量所切斷並使樹脂分解的情況，因此， 樹脂之劣化的問題係被解決，又，由於係不會有在真空處 理裝置內而發生起因於樹脂之分解所產生的有機物之雜質 的情況，因此’亦能夠將裝置內部··或者是處理對象物被污 染的問題解決。 又，若依據本發明，則由於係採用有特定之密封構造 ’因此’係能夠得到下述之效果：亦即是，並不會有紫外 線等之光的透過面積減少的情況，並且，也不會有到達處 理對象物上之光的強度降低並使照射光強度分布惡化的情 況’進而’更能夠達成下述之效果：亦即是，相較於先前 技術，裝置成本係並不會有所改變。 【實施方式】 -11 - 201209915 以下’參考圖4(a)及（b)還有圖5，針對本發明之 實施型態作說明。爲了便於說明，係以下述情況爲例來進 行說明：亦即是’作爲光照射裝置，係使用紫外線照射裝 置’作爲光透過性隔壁，係使用石英窗，作爲處理對象物 ，係使用晶圓》 若依據對於本發明之真空處理裝置的其中一種實施形 態作展示之圖4(a)，則此真空處理裝置，係具備有：身 爲框體之真空處理室41、和用以載置晶圓42之平台43、和 被設置在平台43之下方並用以將晶圓42加熱至特定之溫度 的如同燈管手段一般之加熱手段（未圖示）、和在形成真 空處理室41之上部開口部的側壁之上面處而被固定設置之 光透過性隔壁（石英窗）44 (關於其之形狀，雖並未特別 限制，但是，例如係可列舉出角形狀或者是圓盤狀等）、 亦即是固定設置在真空處理室41之側壁的上面部之至少一 部份處（例如真空側之緣部）的石英窗44、以及設置在真 空處理室4 1之外部的像是紫外線燈管一般之光照射裝置（ 紫外線照射裝置）45，並且，係更進而具備有：被設置在 石英窗44之上面緣部處的樹脂製之第1密封構件（例如0形 環等）46a、和被設置在真空處理室41之側壁的上面部之 並未被設置有光透過性隔壁的部分處之樹脂製的第2密封 構件（例如〇形環等）46b、以及藉由第1密封構件46a以及 第2密封構件46b來將真空處理室41作密封之推壓構件47 ( 在此推壓構件47處，係於其之兩緣部處，被設置有如同圖 示一般之身爲突起部的鍔構件）’藉由此’而構成爲能夠 將真空處理室41作真空密封。上述石英窗44之下面緣部， -12- 201209915 係亦可設置在真空處理室41之側壁的上面部之一部份的真 空側處，又，石英窗44，係亦可如同圖示一般，以使與石 英窗44之側面相對向的真空處理室41之側壁的上面和石英 窗之上面部成爲同一平面的方式，來作設置。 於上述情況，爲了將2個的密封構件46a和46b作區分 ，在推壓構件47處，係亦可於2個的密封構件之間設置身 爲突起部的鍔構件。 關於上述密封構件46a以及46b，其之尺寸，係可兩者 均爲相同之大小，亦可爲相異之大小。例如，亦可設爲使 第1密封構件46a較第2密封構件46b而更大。 又，於圖4(a)中雖並未圖示，但是，亦可作爲密封 構件而僅具備第1密封構件46a ’並在相當於第2密封構件 46b的場所處，設置金屬等之耐紫外線材料（例如Al、Ti 、Fe、Ni、Cu、Ag以及SUS等）製的構件。用以推壓此第 1密封構件46a之推壓構件’係爲於其之兩緣部處被設置有 身爲突起部之鍔構件的推壓構件。 進而，亦可如圖4(b)中所示一般，藉由1個的密封 構件46來進行密封。於此情況’係以將石英窗44之側面和 真空處理室4 1之側壁的側面間之空隙縮窄爲理想。如圖4 (b )中所示一般，密封構件4 6 ’係以將石英窗4 4之側面 和與其之側面相對向之真空處理室4 1的側壁之側面間的空 隙部分作密封的方式’而被設置。於圖4 ( b )中，被設置 在推壓構件47之緣部處的身爲突起部之鍔構件47a的突起 部之下面，係分別被推壓在固定於石英窗44之上面以及真 空處理室41之側壁的上面處之密封構件46上，其結果，真 -13- 201209915 空處理室41內係被作真空密封。 若是使用圖4 ( a )中所示之真空處理裝置，則係能夠 從設置在裝置外部之上方處的像是紫外線燈管一般之紫外 線照射裝置45來通過石英窗44而對於被載置於平台43上之 晶圓42表面上照射紫外線，並能夠對於在表面上被形成有 各種膜之晶圓42進行處理。於此情況，紫外線係僅照射在 晶圓42上，而不會有使紫外線照射在樹脂製之第丨密封構 件46a以及第2密封構件46b上的情況》其結果，係並不會 有樹脂中之碳-碳鍵結等的鍵結經由紫外線而被切斷而使 樹脂被分解並造成劣化的情況。因此，在真空處理裝置內 係並不會發生起因於樹脂之分解所產生的有機物之雜質， 而亦不會有對於裝置內部或者是處理對象物造成污染的情 況。圖4 ( b )的情況時，亦爲相同》 另外’於圖4(a)以及（b)的情況時，係如同上述 —般，在使紫外線只會照射至晶圓42而不會照射至密封構 件一般的位置處而配置密封構件。但是，當在可能會被紫 外線所照射到的位置處而配置密封構件的情況時，亦可將 推壓構件47藉由紫外線遮斷材料（例如，由從Be、b、c 、Mg、Al、Si、P、Ca、Sc、Ti、v、Cr、Μη、Fe、Co、 Ni、Cu、Zn、Ga、Ge、Se、As ' Sr、Y、Zr、Nb、Mo、201209915 6. EMBODIMENT OF THE INVENTION: TECHNICAL FIELD The present invention relates to a vacuum processing apparatus, a processing method of a processing object, and a film forming apparatus, which are particularly useful for sealing light transmittance. A vacuum processing apparatus for sealing a structure in which a sealing member of a partition wall is irradiated with ultraviolet rays, a processing method of a processing object using the vacuum processing apparatus, and a film forming apparatus including the vacuum processing apparatus. [Prior Art] With the miniaturization and high integration of semiconductor elements, it is necessary to suppress an increase in signal transmission delay or power consumption. Therefore, in order to reduce the capacitance between wirings, a technique of using an interlayer insulating film made of a low dielectric material has been developed as a wiring film. As a technique for producing a low dielectric film, it is known that a low dielectric material (for example, a Low-k material) for forming an interlayer insulating film is coated on a processing object by a spin coater to form a film. A low-dielectric-rate film is formed by irradiating ultraviolet rays with a low-dielectric-rate film while heat-treating the object, thereby producing a low-dielectric film having sufficient mechanical strength (for example, refer to the patent document) 1 ). Further, it is also known that a low dielectric constant film is deposited on a processing target by a CVD apparatus, and the deposited low dielectric constant film is irradiated with ultraviolet rays to cure the object while heating. A low dielectric film having sufficient mechanical strength is produced on the object to be processed (for example, refer to Patent Document 2). -5- 201209915 When a low-dielectric-rate film is produced as described above, the process of curing by irradiation with ultraviolet rays is to use a mechanism that heats the object to be processed and irradiates the object to be treated in the vacuum processing chamber. The vacuum processing device of the mechanism (ultraviolet irradiation device) is implemented. The ultraviolet ray irradiation device is also provided outside the vacuum processing device. In this case, an ultraviolet ray transmission window (for example, a quartz window or the like) is fixedly provided at an opening portion of the upper portion of the vacuum processing chamber, and is configured to be ultraviolet ray. This is transmitted through the window to the object to be processed placed in the processing chamber. When the ultraviolet ray is fixed through the window and vacuum-sealed, there is a case where a resin-made sealing member is often used. However, there is no technique which is considered for the deterioration of the sealing member. As described above, in the vacuum processing apparatus used for processing the surface of the object to be processed by light irradiation such as ultraviolet irradiation, a light-transmitting partition wall made of quartz is used, and light is transmitted through the partition wall. Irradiation. Since the quartz is a hard and plastic material, in general, as a sealing member in the case where a light-transmitting partition wall is provided at a vacuum processing apparatus, it is not hard to use a metal gasket. The material is formed by using a material made of a resin such as a 〇-shaped ring or a TEFLON (registered trademark) ring which is soft and elastic. In many cases, such a sealing member is disposed at the upper portion of the frame 11 constituting the general vacuum processing apparatus shown in FIG. 1 and at the lower side of the edge portion of the light transmissive partition wall 12, and is disposed at At the vacuum side, the light-permeable partition wall 12 is mainly pressed against the resin-made sealing member 13 by the atmospheric pressure applied to the light-permeable partition wall 12, and is deformed to perform sealing. In FIG. 1, 14 is a wafer support platform, and 15 is a wafer for processing an object 201209915 but is disposed above the device by using an ultraviolet irradiation device disposed outside the vacuum processing device. In the case of a vacuum processing apparatus that performs ultraviolet irradiation treatment on an object to be processed placed in the apparatus, the quartz window which is a light-permeable partition wall which is vacuum-sealed by the resin material is present. The following general questions. For example, if it is provided with a frame body 21 and a quartz window 22 provided at an upper portion thereof as shown in FIG. 2 and a sealing member provided at a vacuum side between the quartz window 22 and an upper portion of the frame body 21, 2 3 (for example, a 〇-shaped ring, etc.) The same vacuum treatment device as that of the case of FIG. 1 is provided, and an ultraviolet ray irradiation device such as an ultraviolet lamp tube is provided from above the outside of the device. When the ultraviolet ray is irradiated to the wafer 26 of the object to be processed placed on the stage 25 by the quartz window 22, not only the wafer 26' but also the ultraviolet ray is irradiated to the sealing member 23 made of resin. As a result, the bond of carbon-carbon bond or the like in the resin is cut by ultraviolet rays, and the resin is decomposed and causes deterioration. Further, since the impurities of the organic matter caused by the decomposition of the tree are generated in the vacuum processing apparatus, there is a problem that the inside of the apparatus or the object to be processed is contaminated. In the vacuum apparatus shown in Fig. 2, if the ultraviolet ray irradiation apparatus is installed inside the apparatus, since there is no need to use a quartz window, the above-mentioned general problem does not occur, but it is caused by discharge. From the viewpoint of countermeasures against contamination of impurities inside the device, or from the viewpoint of poor maintainability of the device, it is preferable to provide the ultraviolet irradiation device outside the vacuum processing device. 201209915 Further, as a countermeasure against the above problem, in the vacuum processing apparatus similar to that of FIG. 2, it is also possible to consider the quartz window 32 provided at the upper portion of the frame body 3 as shown in FIG. At the side of the atmosphere, a blocking member 37 that partially blocks ultraviolet rays is provided, and a general method of preventing ultraviolet rays from being irradiated to a resin-made sealing member (for example, a ring-shaped ring) is provided. In Fig. 3, 34 is a UV irradiation device, 35 is a wafer support platform, and 36 is a wafer. In this case, in order not to irradiate the ultraviolet ray to the sealing member 33, it is necessary to block the corresponding area of the quartz window 32 which is a light-transmitting partition wall. However, since the quartz window 32 is required to have a thickness capable of withstanding the pressure of the atmospheric pressure, the ultraviolet transmission area is reduced as the blocking area is increased, and the ultraviolet ray on the wafer 36 as the processing target is reached. The light intensity is lowered, and there is a problem that the intensity distribution of the illumination light is deteriorated. For example, as shown in FIG. 3, in order to provide the blocking member 37 so as not to cause ultraviolet rays to be irradiated to the sealing member 33, the ultraviolet rays passing through the quartz window 32 become within the range of the lines A and B, reaching the wafer. The light intensity of the ultraviolet light on 36 is lowered. Further, if the ultraviolet light transmission area is to be increased, and the size of the frame body 3 1 and the quartz window 3 2 is increased, the cost is increased not only, and the quartz window 32 is maintained at a sufficient strength with respect to the atmospheric pressure. It is also necessary to increase the thickness thereof so that the area to be interrupted is further increased, and the light intensity of the ultraviolet rays reaching the wafer 36 is further lowered. [Prior Art] [Patent Document 1] [Patent Document 1] Japanese Patent Laid-Open Publication No. 2008-4628 No. 201209915 [Patent Document 2] Japanese Laid-Open Patent Publication No. 2006- 1 655 73 An object of the present invention is to provide a vacuum processing apparatus including a sealing structure that does not expose a resin sealing member to light that is irradiated with ultraviolet light, and a treatment using the same. A method of processing an object and a film forming apparatus including the vacuum processing apparatus. [Means for Solving the Problem] The vacuum processing apparatus of the present invention includes a platform for placing a processing object and a light transmission portion fixed to a surface above the side wall forming the opening portion of the vacuum processing chamber. A light-irradiating device is provided outside the vacuum processing chamber, and the vacuum processing device is characterized in that: a first sealing member made of resin is provided on an upper edge portion of the light-transmitting partition wall And a second sealing member made of resin, which is provided at a portion of the upper surface of the side wall of the vacuum processing chamber where the light transmissive partition wall is not provided; and the pressing member is the first The sealing member and the pressing member of the second sealing member seal the vacuum processing chamber by the first sealing member and the second sealing member. In the vacuum processing apparatus described above, the light irradiation device is an ultraviolet irradiation device. In the vacuum processing apparatus described above, it is characterized in that the pressing member is further configured to separate the first sealing member -9-201209915 member and the second sealing member. . Further, the vacuum processing apparatus of the present invention includes a vacuum processing chamber, a platform for placing the object to be processed, and a light transmission portion fixed to a surface above the side wall forming the opening portion of the vacuum processing chamber. And a light-irradiating device provided in the outside of the vacuum processing chamber, the vacuum processing device comprising: a sealing member made of resin, the side surface of the light-permeable partition wall and the side surface a portion of the gap between the side walls of the vacuum processing chamber is provided in a sealed manner; and a pressing member of the sealing member. A method of treating a processing object according to the present invention is characterized in that a processing object on which a film is formed on a surface of a vacuum processing chamber is fixedly disposed in a vacuum process from a light irradiation device The light-transmitting partition wall on the surface of the upper surface of the opening portion of the upper portion of the chamber is irradiated with light, and when the object to be processed is processed, the light-transmitting partition wall is provided at the upper edge portion of the light-permeable partition wall. a first sealing member made of a resin; and a second sealing member made of a resin provided on a portion of the upper surface of the vacuum processing chamber where the light transmissive partition wall is not provided; and the first sealing member The sealing member and the pressing member of the second sealing member are irradiated by the first sealing member and the second sealing member, and the light-permeable partition wall formed by the pressing member that seals the vacuum processing chamber Light is processed on the film on the object to be processed. In the method of processing the object to be processed, the light irradiation device is an ultraviolet irradiation device. In the method of treating the object to be processed, the film has a low dielectric constant film. - 10-201209915 The film forming apparatus of the present invention is characterized by comprising: a coating device used when a film is formed on a processing object; and the vacuum processing device; and a coating device for using the coating device The object to be processed which is formed by coating is applied to the loading/unloading chamber in which the vacuum processing chamber is carried in and out. In the film forming apparatus described above, the film formed by using the coating device is a low dielectric film. [Effects of the Invention] According to the present invention, it is possible to obtain an effect that the sealing member made of a resin is not irradiated with light energy such as ultraviolet rays, and as a result, there is no resin. In the case where the bond of carbon-carbon bond or the like is cut by the light energy such as ultraviolet rays and the resin is decomposed, the problem of deterioration of the resin is solved, and since it is not in the vacuum processing apparatus However, since the impurities of the organic matter generated by the decomposition of the resin occur, it is also possible to solve the problem that the inside of the apparatus or the object to be treated is contaminated. Further, according to the present invention, since a specific sealing structure is used, it is possible to obtain an effect that the transmission area of light such as ultraviolet rays is not reduced, and In the case where the intensity of the light reaching the object to be processed is lowered and the intensity distribution of the irradiation light is deteriorated, the effect of the above is further achieved: that is, the device cost is not compared with the prior art. change. [Embodiment] -11 - 201209915 Hereinafter, an embodiment of the present invention will be described with reference to Figs. 4(a) and 4(b) and Fig. 5 . For convenience of explanation, the following description will be made by taking an example in which "the ultraviolet irradiation device is used as the light-irradiating device, and the quartz window is used as the object to be processed, and the wafer is used". According to FIG. 4(a) showing one embodiment of the vacuum processing apparatus of the present invention, the vacuum processing apparatus is provided with a vacuum processing chamber 41 as a housing and a wafer for mounting the wafer. The platform 43 of 42 and the heating means (not shown), which are disposed under the platform 43 and used to heat the wafer 42 to a specific temperature, are formed in the upper portion of the vacuum processing chamber 41. a light-transmitting partition wall (quartz window) 44 that is fixed to the upper side of the side wall (the shape of the light-transmissive partition wall 44 is not particularly limited, but may be, for example, an angular shape or a disk shape), that is, The quartz window 44 fixedly disposed at at least a portion of the upper surface portion of the side wall of the vacuum processing chamber 41 (for example, the edge of the vacuum side), and the image disposed outside the vacuum processing chamber 41 The external light-emitting device (ultraviolet irradiation device) 45 is further provided with a resin-made first sealing member (for example, an O-ring or the like) 46a provided at the upper edge portion of the quartz window 44. And a second sealing member (for example, a ring-shaped ring) 46b made of a resin provided on a portion of the upper surface of the vacuum processing chamber 41 where the light-transmitting partition wall is not provided, and the first seal The member 46a and the second sealing member 46b are used to seal the vacuum processing chamber 41 as a pressing member 47. Here, the pressing member 47 is attached to both edges of the pressing member 47, and is provided with a projection as shown in the figure. The dam member in the section "by this" is configured to be capable of vacuum sealing the vacuum processing chamber 41. The lower edge portion of the quartz window 44, -12-201209915, may also be disposed at the vacuum side of one of the upper portions of the side wall of the vacuum processing chamber 41, and the quartz window 44 may also be as shown. The upper surface of the vacuum processing chamber 41 facing the side surface of the quartz window 44 and the upper surface of the quartz window are disposed in the same plane. In the above case, in order to distinguish the two sealing members 46a and 46b, a pressing member 47 may be provided between the two sealing members as a protruding member. The sealing members 46a and 46b may be of the same size or different in size. For example, the first sealing member 46a may be made larger than the second sealing member 46b. Further, although not shown in FIG. 4(a), the first sealing member 46a' may be provided as a sealing member, and ultraviolet rays such as metal may be provided at a place corresponding to the second sealing member 46b. A member made of a material such as Al, Ti, Fe, Ni, Cu, Ag, or SUS. The pressing member ' for pressing the first sealing member 46a is a pressing member provided with a weir member as a projection at both edge portions thereof. Further, as shown in Fig. 4 (b), sealing may be performed by one sealing member 46 as usual. In this case, it is preferable to narrow the gap between the side surface of the quartz window 44 and the side surface of the side wall of the vacuum processing chamber 41. As shown in Fig. 4 (b), the sealing member 46' is sealed in such a manner as to seal the gap between the side of the quartz window 44 and the side of the side wall of the vacuum processing chamber 41 facing the side thereof. And is set. In Fig. 4(b), the lower surface of the projection of the dam member 47a, which is provided at the edge of the pressing member 47, is pressed against the quartz window 44 and vacuum-treated. On the sealing member 46 at the upper side of the side wall of the chamber 41, as a result, the inside of the empty processing chamber 41 of the true-13-201209915 is vacuum-sealed. If the vacuum processing apparatus shown in FIG. 4(a) is used, it can be placed on the platform through the quartz window 44 from the ultraviolet irradiation apparatus 45 such as an ultraviolet lamp tube disposed above the outside of the apparatus. The wafer 42 on the surface of the wafer 42 is irradiated with ultraviolet rays, and the wafer 42 on which various films are formed on the surface can be processed. In this case, the ultraviolet ray is irradiated only on the wafer 42 without the ultraviolet ray being irradiated onto the second sealing member 46a and the second sealing member 46b made of resin. As a result, there is no resin. The bond of carbon-carbon bond or the like is cut by ultraviolet rays to decompose the resin and cause deterioration. Therefore, impurities in the organic matter caused by decomposition of the resin do not occur in the vacuum processing apparatus, and there is no possibility of contamination to the inside of the apparatus or the object to be treated. In the case of Fig. 4 (b), the same is true. In the case of Fig. 4 (a) and (b), the ultraviolet rays are irradiated only to the wafer 42 without being irradiated as described above. The sealing member is disposed at a general position of the sealing member. However, when the sealing member is disposed at a position where ultraviolet rays may be irradiated, the pressing member 47 may be interrupted by ultraviolet rays (for example, from Be, b, c, Mg, Al, Si, P, Ca, Sc, Ti, v, Cr, Μη, Fe, Co, Ni, Cu, Zn, Ga, Ge, Se, As 'Sr, Y, Zr, Nb, Mo,
Tc、Ru、Rh、Pd、Ag、Cd、ln、Sn、Sb、Te、Ba、Hf、 Ta、W、Re、Os、Ir、Pt ' Au、Hg、T卜 Pb、La、Ce、Pr 、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、 Lu、Ac、Th、Pa、U、Np、PU、Am、Cm、Bk、Cf、Es、Tc, Ru, Rh, Pd, Ag, Cd, ln, Sn, Sb, Te, Ba, Hf, Ta, W, Re, Os, Ir, Pt 'Au, Hg, Tb Pb, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, U, Np, PU, Am, Cm, Bk, Cf, Es,
Fm、Md、No以及Lr中所選擇之金屬的至少一種，以及從 -14- 201209915 此些金屬之氧化物、氮化物還有氟化物所選擇之化合物的 至少一種所構成）來製作之。 上述密封構件，係可爲由氟素樹脂（例如TEFLON ( 登記商標）等）、氟素橡膠、腈橡膠、矽橡膠、氯丁二烯 橡膠等所製作者，作爲氟素樹脂製之密封構件，例如係可 列舉出KALREZ (登記商標）密封構件等。 若依據本發明之處理對象物之處理方法的實施形態， 則此處理方法’係可使用圖4(a)中所示之真空處理裝置 來進行之。亦即是，該處理方法，在對於被載置於真空處 理室41內之被形成有低介電率膜等之薄膜的晶圓42，而從 紫外線照射裝置45來通過設置在真空處理室41處之石英窗 44來照射紫外線，並對於晶圓42表面之薄膜進行處理時， 係通過以藉由具備有被設置在石英窗44之上面緣部處的樹 脂製之第1密封構件（例如Ο形環等）4 6 a、和被設置在真 空處理室41之側壁的上面部處之樹脂製之第2密封構件（ 例如0形環等）46b、以及用以對於第1密封構件46a以及第 2密封構件46b作推壓之具備有被設置在其之緣部處的身爲 突起部之鍔構件47a的推壓構件47，所構成的密封構造， 而能夠將真空處理室41作真空密封的方式所構成的石英窗 構件之石英窗’來對於晶圓42之表面進行紫外線照射，並 藉由此而對於薄膜進行處理。於此情況，亦可在2個的密 封構件之間，設置用以對於第1密封構件46a和第2密封構 件46b作區分之身爲突起部的鍔構件。圖4 ( b )的情況時 ，亦能夠同樣地對於薄膜進行處理。 在藉由使用此種石英窗構件而對於晶圓42進行處理時 -15- 201209915 ，紫外線係僅照射在晶圓42上，而不會有使紫外線照射在 樹脂製之第1密封構件46a以及第2密封構件46b上的情況。 其結果，如同上述一般，在處理工程中，係並不會有樹脂 中之碳-碳鍵結等的鍵結經由紫外線而被切斷而使樹脂被 分解並造成劣化的情況。因此，在真空處理裝置內係並不 會發生起因於樹脂之分解所產生的有機物之雜質，而亦不 會有對於裝置內部或者是處理對象物造成污染的情況。 針對本發明之處理對象物之處理方法，若是作爲處理 對象膜而使用低介電率膜，並針對將此膜進行硬化處理的 情況作更具體之展示，則係如同下述一般。 此處理方法，例如，係將已知之低介電率材料的塗布 液（例如，ALVAC股份有限公司製之塗布液：ULKS (登 記商標）），藉由旋轉塗布器來以特定之旋轉數而塗布在 晶圓上。關於此塗布方法，係並沒有限制，只要是能夠均 勻地塗布，則係可採用通常所使用之方法。在將被均一地 塗布了塗布液之晶圓以低溫（例如，70〜150 °C左右）來 作了燒成後，將在表面上被形成有低介電率膜之晶圓搬送 至真空處理裝置內，並在藉由如同燈管加熱手段一般之加 熱手段來將晶圓加熱至特定之溫度（例如，350 °C )的狀 態下’對於此晶圓而從紫外線照射裝置來照射紫外線並使 低介電率膜硬化，而能夠形成具備有特定之機械性強度的 膜。 在如同上述一般而得到了低介電率膜之後，前進至例 如依據期望而在此低介電率膜上層積其他之膜的工程或者 是對於此低介電率膜進行處理的工程。 -16- 201209915 若依據對於本發明之成膜裝置的實施形態作展示之圖 5 ’則此成膜裝置’係具備有：當在晶圓上形成像是低介 電率膜一般之薄膜時所使用的塗布裝置51、和身爲圖4 (a )以及（b)中所展不之真空處理裝置的真空處理裝置52 、和將在表面上具備有使用塗布裝置51所塗布形成之薄膜 的晶圓對於真空處理室內作搬入以及搬出之裝載/卸下室 (L/UL室）53,被儲存在此裝載/卸下室53中之晶圓，係 經過被設置有搬送機器人之搬送室54，而被搬入至真空處 理裝置52中，並於該處而對於薄膜進行處理，之後，被搬 出至裝載/卸下室（[/1^室）53處。 在如同上述一般而對於薄膜進行了處理後，當依據於 期望而在此膜上形成其他之薄膜或者是進行其他之處理的 情況時，係可構成爲：在搬送室5 4之周圍，配置進行此種 薄膜形成工程或者是其他處理工程之1個或者是複數個的 裝置55，並藉由搬送室54內之搬送機器人來進行搬入/搬 出，而能夠進行各別的處理。 針對圖4中所示之真空處理裝置，爲了便於說明，作 爲光能量源，係列舉出紫外線照射裝置，作爲光透過性隔 壁，係列舉出身爲紫外線透過窗之石英窗爲例，來作了說 明，但是，除此之外，就算是適用微波產生裝置、紅外線 照射裝置、X線產生裝置、雷射產生裝置、可視光產生裝 置等之光能量源，或者是使用石英窗以外之玻璃材料、藍 寶石、CaF2、MgFz等之光透過性隔壁，亦可構成能夠進行 相同之處理的真空處理裝置。又，針對此真空處理裝置， 雖係以對於藉由旋轉塗布器來在表面上塗布低介電率材料 -17- 201209915 並形成了低介電率膜的處理對象物進行處理之裝置爲例， 來作了詳細說明，但是，此裝置，係亦可適用在對於藉由 CVD裝置等之成膜裝置而被形成有低介電率膜或者是其他 之膜的處理對象物之處理中。除此之外，亦可適用在對於 並未被形成膜之基板表面本身的處理中》 作爲可使用本發明之真空處理裝置來實施的處理方法 ，除了上述之外’作爲由在真空中之紫外線照射所進行的 處理，係可作如同下述一般的適用》例如，（1)當使用 有上述之低介電率材料的情況時，係可導入空孔，而製作 低介電率且低折射率之膜，（2)在將奈米尺寸圖案之石 英等推壓於光阻劑等上的狀態下，來進行紫外線照射（+ 熱）並使其硬化，再將其剝離而進行圖案轉印，藉由此， 而能夠製作出氣泡無法進入或者是難以進入之圖案，（3 )能夠藉由紫外線照射’來進行將基板表面之有機物除去 並進行清淨、或者是使基板表面之密著性提升等的基板表 面之改質，（4)特別是關於不希望暴露在大氣中之物， 係可真空一貫性地來藉由紫外線照射而對於基板進行清淨 ’之後以良好密著性來進行成膜。 以下，針對上述之本發明的關連發明，以及該關連發 明中之與由上述的密封構造所導致之效果之間的相輔相成 效果作說明。在說明的便利上，作爲進行處理之薄膜，係 以低介電率膜爲例來進行說明，但是，與本發明相同的， 係並不被限定於該種膜。 上述關連發明之真空處理裝置，係除了上述之本發明 的密封構造之外，更進而具備有：被設置在真空處理室之 "18- 201209915 內部並將此真空處理室之內部以及處理對象物加熱而用以 保持爲特定之溫度分布的熱源；和與使從光照射裝置（例 如紫外線照射裝置）而來之光（例如紫外線等之光能量源 )透過之身爲窗構件的光透過性隔壁（例如石英窗一般之 紫外線透過性隔壁）相對向，並被設置在真空處理室之內 部’而用以將從熱源而來之熱遮斷的遮斷構件A。除了遮 斷構件以外，由於係爲與本發明之真空處理裝置相同的構 成’因此’係省略詳細之說明。 藉由此’除了上述之密封構造所致的效果以外，亦可 達成下述一般之效果》在以下所說明之其他的真空處理裝 置的情況時，亦爲相同。 亦即是，在並不存在有晶圓一般之處理對象物的狀態 下’也就是在處理對象物之處理前.的作爲預備加熱而藉由 熱源來進行加熱時，係能夠將對於光透過性隔壁或者是通 過此隔壁所對於紫外線等之光能量源造成的熱影響，藉由 遮斷構件A來作遮斷，在對於處理對象物進行加熱並且賦 予從光能量源而來之能量時，係成爲能夠將對於真空處理 室之上述隔壁或者是光能量源的熱影響消除，而僅進行必 要之預備加熱。又’由於係將遮斷構件A與上述隔壁相對 向地來設置’因此，至少能夠將對於隔壁之從熱源而來的 熱遮斷。進而’藉由對於光透過性隔壁而以遮斷構件A來 將熱遮斷，係能夠防止伴隨於由於此隔壁之固定部和真空 處理室間的熱膨脹差所導致之變形而造成的碎裂之發生。 又，在上述真空處理裝置中，亦可設爲：真空處理室 係爲圓筒狀，在真空處理室之上部開口部處，上述隔壁係 -19- 201209915 作爲頂板構件而被作固定配置，在此隔壁之大氣側處，係 被設置有光照射裝置，將處理對象物作支持之平台，係被 設置在真空處理室之內部，在此平台之下方，係被設置有 上述熱源，上述遮斷構件A，係被形成爲圓盤狀，並被設 置在平台之上部。 藉由設爲此種構成，對於上述隔壁或者是通過上述隔 壁而對於光照射裝置之從熱源而來之熱的影響，係能夠藉 由遮斷構件A而遮斷，在加熱處理對象物並且照射光時， 係能夠將對於隔壁或者是光照射裝置之熱的影響消除，而 僅進行必要之預備加熱》作爲此隔壁，例如，係可列舉出 角形狀或者是圓盤狀者。 上述熱源，係亦可爲燈管加熱手段，並被設置在上述 平台之下部。如此這般，由於藉由使用燈管加熱手段來使 真空處理室之內部的溫度升溫，而將基板加熱，因此，係 可並不使加熱手段與基板相接觸地來將基板加熱。 進而，係亦可構成爲：在上述遮斷構件A處，於中央 部處被形成有圓形之開口，並主要將對於上述隔壁之周緣 部的熱遮斷。如此這般，藉由使用於中央部被形成有圓形 之開口的遮斷構件A，係能夠將金屬製之真空處理室中的 對於上述隔壁之週緣的固定部之熱的影響降低，而能夠防 止由於熱膨脹率之差所導致之變形而在隔壁之週緣處產生 碎裂，並將對於真空處理室之上述隔壁或者是光照射手段 之熱的影響消除》 更進而，係亦可構成爲：在上述遮斷構件A處，係被 形成有複數之小孔，而維持前述處理室之內部的溫度並將 -20- 201209915 熱遮斷。如此這般，藉由使用被形成有複數之小孔的遮斷 構件A，係能夠對於真空處理室內之溫度作控制，並將對 於真空處理室上部之上述隔壁或者是光照射裝置之熱的影 響消除。 又更進而，例如，當對於上述處理對象物塗布低介電 率膜用組成物並形成低介電率膜的情況時，係可經由對於 此膜而照射從光照射裝置而來之光，並且進行由上述熱源 所致之加熱，而對於此低介電率膜進行硬化處理。在此硬 化處理時，係成爲能夠將對於真空處理室之上述隔壁或者 是光能量源的影響消除，並僅進行必要之預備加熱。 若依據使用上述之具備有遮斷構件A的真空處理裝置 所進行之處理對象物之處理方法，則在藉由對於被塗布有 低介電率膜用組成物之處理對象物進行加熱，並且對於由 此低介電率膜用組成物所得到之薄膜而從真空處理室之外 部來照射紫外線等之光，而在處理對象物表面上形成被作 了改質之薄膜的處理方法中，係爲除了進行處理對象物之 處理時以外，而能夠對於光照射裝置之照射源以及真空處 理室之光透過部位來將對於真空處理室之內部進行加熱時 的熱遮斷者。於此情況，例如在使低介電率膜硬化並形成 被作了改質的薄膜時，係能夠將對於光透過部位或者是光 照射裝置之熱的影響消除，而僅進行必要之預備加熱。 本發明之關連發明的成膜裝置，係具備有：在處理對 象物上塗布低介電率膜用組成物之塗布裝置、和將使用此 塗布裝置而塗布組成物並形成了低介電率膜之物搬入，並 例如能夠進行硬化處理之上述真空處理裝置（亦即是，於 -21 201209915 以下所具體說明之圖6〜8中所示的真空處理裝置）、以及 用以將具備有藉由塗布裝置所塗布並形成之薄膜的處理對 象物對於真空處理室內作搬入和搬出之裝載/卸下室。此 真空處理裝置，在處理工程中，係能夠將對於真空處理室 或者是光能量源之熱的影響消除，並僅進行必要之預備加 熱。 上述之真空處理裝.置，在進行將處理對象物加熱並且 賦予從光能量源而來之能量的處理時，係成爲能夠將對於 真空處理室之光透過性隔壁或者是光能量源之熱的影響消 除，並僅進行必要之預備加熱。又，若依據上述處理方法 ，則在使低介電率膜硬化時，係能夠將對於光透過部位或 者是光照射裝置之熱的影響消除，而僅進行必要之預備加 熱。進而，上述成膜裝置，在使低介電率膜硬化時，係能 夠將對於真空處理室或者是光能量源之熱的影響消除，而 僅進行必要之預備加熱》 接著，參考圖面，針對上述之關連發明之實施型態作 說明。 根據圖6，針對在處理對象物上製作被改質了的低介 電率膜之真空處理裝置作具體說明。在圖6中，係針對上 述之具備有遮斷構件Α的真空處理裝置之其中一例，而對 於其之全體的從側面側所觀察之模式性剖面狀態作展示。 另外，圖6和圖4間，雖然在構圖上係爲相異，但是，基本 上，係僅在遮斷構件之有無等點上有所相異，其他之構成 要素係爲略相同。 如圖6中所示一般，真空處理裝置，係與圖4之情況相 •22- 201209915 同的，具備有將上部作了開口的圓筒狀之金屬製的真空處 理室61，在真空處理室61之上部，係被形成有開口部62。 在真空處理室61之開口部62處’係被配置有圓盤狀之石英 窗63，石英窗63之下面緣部，係被固定在真空處理室61之 側壁上面的一部份（於圖6中，係爲側壁上面之緣部6 2 a ) 上。其係具備有：被設置在石英窗63之上面緣部處的樹脂 製之第1密封構件（例如，〇形環等）64a、和被設置在真 空處理室61之側壁的上面部處之樹脂製之第2密封構件（ 例如，〇形環等）64b、以及身爲用以推壓第1密封構件64a 以及第2密封構件64b之推壓構件並且於其之緣部處被設置 有身爲突起部之鍔構件64c的推壓構件64，並構成爲藉由 此而能夠將真空處理室6 1作真空密封。 於上述情況，爲了將2個的密封構件64a和64b作區分 ，係亦可於該些之間設置身爲突起部的鳄構件》 在真空處理室61之側壁處，係被設置有搬送口 65，並 透過搬送口 65而進行處理對象物66之搬入、搬出。真空處 理室61，係具備有將處理對象物作載置並作支持之平台67 ，平台67係被構成爲可自由升降。在平台67處，係被設置 有保持構件68，並藉由此保持構件而將處理對象物66限制 保持在特定之位置處。 在平台67之下部處，係作爲燈管加熱手段而被設置有 燈管加熱器69，藉由此燈管加熱器，真空處理室61之內部 和處理對象物66係被加熱，並保持爲特定之溫度分布。 在真空處理室61內部，係亦可設置反射器70，於此情 況，係在避開了處理對象物66之從搬送口 65而來之搬入、 -23- 201209915 搬出路徑的狀態下，而將平台67與燈管加熱器69—同地從 側方以及下方來以反射器70而作覆蓋。 又，在石英窗63之上方，係被設置有紫外線照射裝置 71，並對於在表面上具備有低介電率膜之處理對象物66, 而從紫外線照射裝置71來通過石英窗63而照射紫外線，並 進行處理。 在較平台67更上方之真空處理室61的內壁之相同高度 的複數場所處，係被固定設置有支持材72，在支持材72處 ，係被載置有作爲遮斷構件A之圓盤狀的遮斷盤73。遮斷 盤73，係在對於真空處理室61進行預備加熱時，透過搬送 口 65而被搬入至真空處理室61之內部。藉由此遮斷盤，當 藉由燈管加熱器69來將真空處理室61升溫時，對於石英窗 63以及紫外線照射裝置7 1之熱的傳導係被遮斷》 遮斷盤7 3，係藉由耐熱溫度爲高，熱膨脹性爲低，比 重爲低且爲低價之材料來製作，例如，係藉由氧化鋁、 SiC、SiN等之陶瓷或Ti等之金屬來製作。 在上述真空處理裝置中，係藉由燈管加熱器69來將在 表面上具備有低介電率膜之處理對象物66加熱至特定之溫 度（例如3 50 °C )，並從紫外線照射裝置71來通過石英窗 63而將紫外線照射在處理對象物66上。藉由照射紫外線， 而使低介電率膜硬化，並在處理對象物上製作出具備有充 分之機械性強度的低介電率膜。 在對於處理對象物照射紫外線之前，先藉由燈管加熱 器69來將真空處理室61升溫，並將被設置在處理室內部之 治具或者是處理室內預備加熱至特定之溫度。此時，被載 -24- 201209915 置在支持材72上之遮斷盤73，係將對於石英窗63以及紫外 線照射裝置71之熱的傳導遮斷。藉由此，石英窗63以及紫 外線照射裝置7 1，係成爲不會受到用以加熱真空處理室6 1 之熱的影響，而能夠將遮斷盤73下方之氛圍的溫度均一地 保持在必要之狀態下。 在實施預備加熱時，由於石英窗63以及紫外線照射裝 置71係不會受到熱的影響，因此，不會有成爲過熱狀態之 虞，而能夠將對於在金屬製之真空處理室61處的石英窗63 之緣部的固定部（亦即是，在開口部62處之側壁上面的緣 部62a上之固定部）之熱的影響降低，而防止由於起因於 熱膨脹率之差所導致的變形而造成在石英窗63之週緣處發 生碎裂的情況。.又，紫外線照射裝置7 1係成爲不會暴露在 熱之中，而成爲不會產生熱損傷。 因此，係成爲能夠充分地實施真空處理室61之預備加 熱，而能夠有效率地進行低介電率膜之硬化處理。又，由 於紫外線照射裝置71係不會暴露在熱之中，因此係能夠將 紫外線照射裝置7 1側之熱對策簡單化。作爲熱源，由於係 使用燈管加熱器69，因此，不會有熱源與處理對象物66接 觸的情況，而不會有產生污染物等之虞。 故而，在藉由硬化而形成低介電率膜時，係能夠將對 於石英窗63或者是紫外線照射裝置71之熱的影響消除，而 僅進行必要之預備加熱。 接下來，參考圖7，對於本發明之關連發明的真空處 理裝置之其他例作說明。 於圖7中，係對於真空處理裝置之全體的從側面側觀 -25- 201209915 察之模式性剖面狀態作展示。另外，此真空處理裝置’由 於與上述之圖6中所示的真空處理裝置之間，係僅有遮斷 盤之形狀爲相異，因此，對於相同構件，係附加同一符號 ，並省略重複之說明。 在較平台67更上方之真空處理室61的內壁之相同高度 的複數場所處，係被固定設置有支持材72，在支持材72處 ，係被載置有作爲遮斷構件A之遮斷盤74»遮斷盤74’係 爲圓盤狀，並於中央部處被形成有圓形之開口 75»遮斷盤 74，係在對於真空處理室61進行預備加熱時，透過搬送口 65而被搬入至真空處理室61之內部。藉由此遮斷盤，當藉 由燈管加熱器69來將真空處理室61升溫時，對於石英窗63 (特別是身爲石英窗63之周緣部的對於真空處理室61之上 部開口部的固定部）以及紫外線照射裝置7 1之熱的傳導係 被遮斷。 藉由設置此種遮斷盤74，在實施預備加熱時，由於石 英窗63之週緣部位係不會受到熱的影響，因此，不會有成 爲過熱狀態之虞，而能夠將對於被設置在金屬製之真空處 理室61的上部開口部處之石英窗63的週緣之固定部之熱的 影響大幅度降低，而確實地防止由於起因於熱膨脹率之差 所導致的變形而造成在石英窗63之週緣處發生碎裂的情況 。又，由於在遮斷盤74處係被形成有開口 75，因此，亦能 夠將真空處理室61之全體的氛圍均一地升溫。 因此，在防止石英窗63之週緣的碎裂之發生的同時， 亦能夠涵蓋真空處理室61之內部全體來均一地進行加熱。 當作爲紫外線照射裝置7 1而使用施加有熱對策者的情況時 -26- 201209915 ，係能夠設置被特化爲用以防止石英窗63之碎裂發生的輕 量之遮斷盤74，而能夠在確實地防止了石英窗63之週緣之 碎裂發生的狀態下，來實施預備加熱。 在上述之圖6以及圖7所示的真空處理裝置中，係列舉 出將遮斷盤73、遮斷盤74載置在支持材72上的例子而作了 說明，但是，亦可並不使用支持材，而將此些之遮斷盤保 持在處理對象物66之保持構件68上。又，亦可載置在反射 器70之上緣部份處。 另外，遮斷盤，係亦可爲其之形狀爲圓盤狀並且相對 於中心部分之厚度而使外周部份之厚度變得更厚之遮斷盤 ，藉由設置將外周部之厚度增厚了的遮斷盤，係能夠將對 於在金屬製之真空處理室61處的石英窗63之週緣的固定部 之熱的影響確實地降低，而能夠將遮斷盤之下側均一地升 溫，並實施預備加熱。 又，遮斷盤，亦可爲其之形狀爲圓盤狀並且被形成有 複數之小孔的遮斷盤，藉由設置如此這般地被形成有小孔 之遮斷盤，係能夠更容易地進行真空處理室61之全體的氛 圍之升溫控制。 接下來，參考圖8，對於本發明之關連發明的真空處 理裝置之又一其他例作說明。 於圖8中，係對於真空處理裝置之全體的從側面側觀 察之剖面狀態作展示。另外，此真空處理裝置，由於與上 述之圖6以及圖7中所示的真空處理裝置之間，係僅有平台 之構成爲相異，因此，對於相同構件，係附加同一符號， 並省略重複之說明。 -27- 201209915 如圖8所示，在真空處理室61之內部，係被設置有平 台67’平台67係被構成爲可自由升降。在平台67之上面， 係被設置有作爲熱源之熱板76。在熱板76上，處理對象物 66係被作直接載置，並構成爲將此處理對象物之背面加熱 至特定之溫度。而，於圖6以及圖7中，係並未設置有燈管 加熱器6 9。 就算是如同圖8中所示一般之具備有熱板76的真空處 理裝置’亦與上述之圖6以及圖7之情況相同的，石英窗63 以及紫外線照射裝置7 1係不會有受到熱影響的情況。 針對圖6〜8中所示之真空處理裝置，爲了便於說明， 作爲光能量源’係列舉出紫外線照射裝置，作爲光透過性 隔壁，係列舉出身爲紫外線透過窗之石英窗，作爲光能量 遮斷構件，係以紫外線遮斷構件爲例，來作了說明，但是 ，除此之外，就算是適用微波產生裝置 '紅外線照射裝置 、X線產生裝置、雷射產生裝置、可視光產生裝置等之光 能量源’或者是使用石英窗以外之玻璃材料、藍寶石、 CaF2、MgF2等之光透過性隔壁’或者是適用紫外線遮斷構 件以外之由上述金屬、合金 '氧化物、氮化物、氟化物所 成的光能量遮斷構件’亦可構成能夠進行相同之處理的真 空處理裝置。 又’針對此些之真空處理裝置，雖係以對於藉由旋轉 塗布器來在表面上塗布低介電率材料並形成了低介電率膜 的處理對象物進行處理之裝置爲例，來作了說明，但是， 此些之裝置’係亦可適用在對於藉由CVD裝置等之成膜裝 置而被形成有低介電率膜或者是其他之膜的處理對象物之 -28- 201209915 處理中。除此之外，亦可適用在對於並未被形成膜之基板 表面本身的處理中。 作爲可使用上述關連發明之真空處理裝置來實施的處 理方法，係可適用上述之本發明的由在真空中之紫外線照 射所進行的各種處理。 〔產業上之利用可能性〕 若依據本發明，則藉由採用特定之密封構造，由於樹 脂製之密封構件係成爲不會受到紫外線等之光的照射，因 此’係不會有樹脂之劣化的問題，並且亦不會有在真空處 理裝置內發生起因於樹脂之分解所產生的有機物雜質並對 於裝置內部或處理對象物造成污染的情況。故而，係可對 於使用有在真空處理室內而藉由光照射來進行處理之真空 處理裝置的各種產業領域中作利用，例如，係可利用在製 作低介電率膜之產業領域中。 【圖式簡單說明】 〔圖1〕對於先前技術之真空處理裝置的構成之其中 一例作模式性展示的槪念圖。 〔圖2〕對於先前技術之真空處理裝置的構成之另外 一例作模式性展示的槪念圖。 〔圖3〕對於先前技術之真空處理裝置的構成之又另 外一例作模式性展示的槪念圖。 〔圖4〕對於本發明之真空處理裝置的構成之其中— 種實施形態作模式性展示的槪念圖。 -29- 201209915 〔圖5〕對於本發明之成膜裝置的構成之其中一種實 施形態作模式性展示的槪念圖。 〔圖6〕對於本發明的關連發明之真空處理裝置的構 成之其中一種實施形態作模式性展示的槪念圖。 〔圖7〕對於本發明的關連發明之真空處理裝置的構 成之另外一種實施形態作模式性展示的槪念圖。 〔圖8〕對於本發明的關連發明之真空處理裝置的構 成之又另外一種實施形態作模式性展示的槪念圖。 【主要元件符號說明】 1 1 :框體 1 2 :光透過性隔壁 1 3 :密封構件 14 :平台 1 5 :晶圓 2 1 :框體 22 :石英窗 2 3 _密封構件 24 :紫外線照射裝置 25 :平台 2 6 :晶圓 31 :框體 32 :石英窗 3 3 :密封構件 3 4 :紫外線照射裝置 -30- 201209915 3 5 :晶圓支持平台 3 6 :晶圓 3 7 :遮斷構件 41 :真空處理室 42 :晶圓 43 :平台 44 :光透過性隔壁（石英窗） 45 :光照射裝置（紫外線照射裝置） 46a :第1密封構件 46b :第2密封構件 47 :推壓構件 47a :鍔構件 51 :塗布裝置 52 :真空處理裝置 53 :裝載/卸下室 54 :搬送室 55 :裝置 6 1 :真空處理室 62 :開口部 62a :緣部 63 :石英窗 64 :推壓構件 64a :第1密封構件 64b :第2密封構件 64c :鍔構件 -31 - 201209915 65 :搬送口 66 :處理對象物 67 :平台 6 8 :保持構件 69 :燈管加熱器 70 :反射器 7 1 :紫外線照射裝置 72 :支持材 73 :遮斷盤 74 :遮斷盤 75 :開口 76 :熱板 -32At least one selected from the group consisting of Fm, Md, No, and Lr, and at least one selected from the group consisting of at least one of a metal oxide, a nitride, and a fluoride selected from -14 to 201209915. The sealing member may be made of a fluorocarbon resin (for example, TEFLON (registered trademark)), a fluorocarbon rubber, a nitrile rubber, a ruthenium rubber, a chloroprene rubber or the like, and may be a sealing member made of a fluororesin. For example, a KALREZ (registered trademark) sealing member or the like can be cited. According to the embodiment of the processing method of the object to be processed according to the present invention, the processing method can be carried out using the vacuum processing apparatus shown in Fig. 4 (a). In other words, the processing method is provided in the vacuum processing chamber 41 from the ultraviolet irradiation device 45 to the wafer 42 on which the thin film of the low dielectric film or the like is placed in the vacuum processing chamber 41. The quartz window 44 is irradiated with ultraviolet rays, and when the film on the surface of the wafer 42 is processed, the first sealing member (for example, ruthenium) is provided by a resin provided at the upper edge portion of the quartz window 44. a ring or the like) and a second sealing member (for example, an O-ring or the like) 46b made of a resin provided at an upper surface portion of the side wall of the vacuum processing chamber 41, and for the first sealing member 46a and the (2) The pressing member 47 which is pressed by the sealing member 46b and provided with the dam member 47a which is a protrusion portion provided at the edge portion thereof is provided with a sealing structure, and the vacuum processing chamber 41 can be vacuum-sealed. The quartz window of the quartz window member formed by the method is irradiated with ultraviolet rays on the surface of the wafer 42, and thereby the film is processed. In this case, a weir member that is a protrusion for distinguishing between the first sealing member 46a and the second sealing member 46b may be provided between the two sealing members. In the case of Fig. 4 (b), the film can be treated in the same manner. When the wafer 42 is processed by using such a quartz window member, -15-201209915, the ultraviolet ray is irradiated only on the wafer 42, and the ultraviolet ray is irradiated to the first sealing member 46a made of resin and the first 2 The condition on the sealing member 46b. As a result, as described above, in the treatment process, the bond such as the carbon-carbon bond in the resin is not cut by the ultraviolet rays, and the resin is decomposed and deteriorated. Therefore, impurities in the organic matter caused by decomposition of the resin do not occur in the vacuum processing apparatus, and there is no possibility of contamination of the inside of the apparatus or the object to be treated. The treatment method of the object to be treated according to the present invention is more specifically shown in the case where a low dielectric film is used as the film to be processed and the film is subjected to a hardening treatment. This processing method is, for example, a coating liquid of a known low dielectric material (for example, a coating liquid manufactured by ALVAC Co., Ltd.: ULKS (registered trademark)), which is coated by a spin coater at a specific number of rotations. On the wafer. The coating method is not limited, and any method which is generally used can be employed as long as it can be uniformly applied. After the wafer to which the coating liquid is uniformly applied is fired at a low temperature (for example, about 70 to 150 ° C), the wafer having the low dielectric film formed on the surface is transferred to a vacuum process. In the device, the wafer is heated to a specific temperature (for example, 350 ° C) by means of a heating means such as a lamp heating means, and ultraviolet rays are irradiated from the ultraviolet irradiation device for the wafer and The low dielectric film is hardened to form a film having a specific mechanical strength. After obtaining a low dielectric film as described above, the process proceeds to, for example, the process of laminating other films on the low dielectric film as desired or the process of treating the low dielectric film. -16- 201209915 According to the embodiment of the film forming apparatus of the present invention, FIG. 5 'the film forming apparatus' is provided when a film such as a low dielectric film is formed on a wafer. The coating device 51 to be used, and the vacuum processing device 52 which is a vacuum processing device which is not shown in FIGS. 4(a) and 4(b), and a crystal which is provided with a film formed by coating using the coating device 51 on the surface. The loading/unloading chamber (L/UL chamber) 53 for loading and unloading the inside of the vacuum processing chamber is stored in the loading/unloading chamber 53 through the transfer chamber 54 provided with the transfer robot. Then, it is carried into the vacuum processing apparatus 52, where the film is processed, and then carried out to the loading/unloading chamber ([/1^room) 53. After the film is treated as described above, when another film is formed on the film as desired or other processing is performed, it may be configured to be disposed around the transfer chamber 54. Such a film forming process or one of the other processing items or a plurality of devices 55 can be carried in and out by the transfer robot in the transfer chamber 54, and each of the processes can be performed. In the vacuum processing apparatus shown in FIG. 4, for the sake of convenience of explanation, a series of ultraviolet light irradiation devices are exemplified as the light energy source, and a quartz window which is an ultraviolet ray transmission window is exemplified as a light-transmitting partition wall. However, in addition to this, even a light energy source such as a microwave generating device, an infrared ray illuminating device, an X-ray generating device, a laser generating device, a visible light generating device, or the like, or a glass material other than a quartz window or sapphire is used. A light-transmissive partition wall such as CaF2 or MgFz may constitute a vacuum processing apparatus capable of performing the same treatment. Further, this vacuum processing apparatus is exemplified by a device for processing a processing object in which a low dielectric material -17-201209915 is coated on a surface by a spin coater and a low dielectric film is formed. Although it is explained in detail, this apparatus can also be applied to the processing of the object to be processed in which a low dielectric film or another film is formed by a film forming apparatus such as a CVD apparatus. In addition, it is also applicable to a treatment method which can be carried out using the vacuum processing apparatus of the present invention in the treatment of the surface of the substrate which is not formed into a film, except for the above, as the ultraviolet ray in a vacuum The treatment by irradiation can be applied as follows. For example, (1) When the above-described low dielectric material is used, holes can be introduced to produce a low dielectric constant and low refraction. (2) In a state in which quartz of a nano-size pattern is pressed against a photoresist or the like, ultraviolet irradiation (+heat) is performed and hardened, and then peeled off to perform pattern transfer. By this, it is possible to produce a pattern in which bubbles cannot enter or are difficult to enter, and (3) it is possible to remove and clean the organic substance on the surface of the substrate by ultraviolet irradiation, or to improve the adhesion of the surface of the substrate. Modification of the surface of the substrate, etc., (4) especially for substances that are not desired to be exposed to the atmosphere, can be vacuum-continuously cleaned by ultraviolet irradiation. Of the film formation is performed. Hereinafter, the related invention of the related invention of the present invention and the effect of the above-described sealing structure in the related invention will be described. For convenience of explanation, the film to be processed is exemplified by a low dielectric film, but the same as the present invention is not limited to the film. In addition to the above-described sealing structure of the present invention, the vacuum processing apparatus according to the above-described invention is further provided with the inside of the vacuum processing chamber and the object to be processed, which is disposed in the vacuum processing chamber, "18-201209915; a heat source for heating to maintain a specific temperature distribution; and a light transmissive partition wall which is a window member that transmits light from a light irradiation device (for example, an ultraviolet irradiation device) (for example, a light energy source such as ultraviolet light) (for example, the ultraviolet ray-permeable partition wall of a quartz window) is opposed to the inside of the vacuum processing chamber, and the blocking member A for blocking heat from the heat source is used. In addition to the blocking member, the same configuration as that of the vacuum processing apparatus of the present invention is omitted. Therefore, detailed description is omitted. In addition to the effects of the above-described sealing structure, the following general effects can be achieved. In the case of other vacuum processing apparatuses described below, the same applies. In other words, in the state where the object to be processed in the wafer is not present, that is, the heating is performed by the heat source as the preliminary heating before the processing of the object to be processed, the light transmittance can be obtained. The partition wall or the thermal influence of the partition wall on the light energy source such as ultraviolet rays is blocked by the blocking member A, and when the object to be processed is heated and the energy from the optical energy source is supplied, It is possible to eliminate the thermal influence on the partition wall or the optical energy source of the vacuum processing chamber, and to perform only the necessary preliminary heating. Further, since the blocking member A is disposed to face the partition wall, at least the heat from the heat source of the partition wall can be blocked. Further, by blocking the heat by the blocking member A with respect to the light-transmitting partition wall, it is possible to prevent the chipping caused by the deformation due to the difference in thermal expansion between the fixed portion of the partition wall and the vacuum processing chamber. occur. Further, in the vacuum processing apparatus, the vacuum processing chamber may be cylindrical, and the partition wall system -19-201209915 may be fixed as a top plate member at the upper portion of the vacuum processing chamber. At the atmosphere side of the partition wall, a light irradiation device is provided, and a platform for supporting the object to be treated is disposed inside the vacuum processing chamber, and the heat source is disposed below the platform, and the occlusion is performed. The member A is formed in a disk shape and is disposed on the upper portion of the platform. With such a configuration, the influence of the heat from the heat source on the light-irradiating device by the partition wall or the partition wall can be blocked by the blocking member A, and the object to be processed is heated and irradiated. In the case of light, the influence on the heat of the partition wall or the light irradiation device can be eliminated, and only the necessary preliminary heating can be performed. As the partition wall, for example, an angular shape or a disk shape can be cited. The heat source may also be a lamp heating means and disposed under the platform. In this manner, since the temperature of the inside of the vacuum processing chamber is raised by using the lamp heating means to heat the substrate, the substrate can be heated without contacting the heating means with the substrate. Further, in the blocking member A, a circular opening may be formed in the center portion, and heat to the peripheral portion of the partition wall may be mainly blocked. In this manner, by using the blocking member A having a circular opening formed in the center portion, it is possible to reduce the influence of heat on the fixing portion of the peripheral edge of the partition wall in the vacuum processing chamber made of metal. Preventing the occurrence of chipping at the periphery of the partition wall due to the deformation caused by the difference in the coefficient of thermal expansion, and eliminating the influence of the heat of the partition wall or the light irradiation means of the vacuum processing chamber. Further, it may be configured as follows: At the above-mentioned blocking member A, a plurality of small holes are formed to maintain the temperature inside the processing chamber and to thermally block -20-201209915. In this way, by using the blocking member A formed with a plurality of small holes, it is possible to control the temperature in the vacuum processing chamber and influence the heat of the partition wall or the light irradiation device on the upper portion of the vacuum processing chamber. eliminate. Furthermore, for example, when a composition for a low dielectric film is applied to the object to be processed and a low dielectric film is formed, light from the light irradiation device can be irradiated to the film, and The heating by the above heat source is performed, and the low dielectric film is subjected to a hardening treatment. At the time of the hardening treatment, it is possible to eliminate the influence on the partition walls or the light energy source of the vacuum processing chamber, and to perform only necessary preliminary heating. According to the method of treating an object to be processed by using the above-described vacuum processing apparatus including the blocking member A, the object to be processed coated with the composition for a low dielectric film is heated, and In the method for processing a thin film of a composition for a low dielectric constant film, a light such as an ultraviolet ray is irradiated from the outside of the vacuum processing chamber to form a modified film on the surface of the object to be processed, In addition to the processing of the object to be processed, it is possible to heat the inside of the vacuum processing chamber to the irradiation source of the light irradiation device and the light transmission portion of the vacuum processing chamber. In this case, for example, when the low dielectric constant film is cured and a modified film is formed, the influence on the heat of the light transmitting portion or the light irradiation device can be eliminated, and only the necessary preliminary heating can be performed. The film forming apparatus according to the invention of the present invention includes a coating device that applies a composition for a low dielectric constant film to a processing object, and a composition that is coated with the coating device to form a low dielectric film. The above-mentioned vacuum processing apparatus (that is, the vacuum processing apparatus shown in FIGS. 6 to 8 specified in the following description of 2012-201209915), and the The object to be processed of the film coated and formed by the coating device is loaded/unloaded into and out of the vacuum processing chamber. This vacuum processing apparatus is capable of eliminating the influence of heat on the vacuum processing chamber or the optical energy source in the processing, and performing only necessary preliminary heating. In the above-described vacuum processing apparatus, when the processing object is heated and the energy from the optical energy source is supplied, the heat can be transmitted to the light-transmissive partition wall of the vacuum processing chamber or the light energy source. The effect is eliminated and only the necessary preparatory heating is performed. Further, according to the above treatment method, when the low dielectric constant film is cured, the influence on the light transmission portion or the heat of the light irradiation device can be eliminated, and only the necessary preliminary heating can be performed. Further, in the film forming apparatus, when the low dielectric constant film is cured, the influence on the heat of the vacuum processing chamber or the optical energy source can be eliminated, and only the necessary preliminary heating can be performed. The above-described embodiments of the related invention are described. A vacuum processing apparatus for producing a modified low dielectric film on a processing object will be specifically described with reference to Fig. 6 . In Fig. 6, an example of a vacuum processing apparatus including the above-described blocking member , is shown, and the mode cross-sectional state as viewed from the side surface side of the entire body is shown. Further, although Fig. 6 and Fig. 4 are different in composition, basically, the difference is different only in the presence or absence of the blocking member, and the other constituent elements are slightly the same. As shown in Fig. 6, the vacuum processing apparatus is the same as that of Fig. 4, which is the same as that of the case of the case of the present invention, and has a cylindrical metal vacuum processing chamber 61 having an opening in the upper portion, in the vacuum processing chamber. An upper portion of 61 is formed with an opening 62. At the opening portion 62 of the vacuum processing chamber 61, a disc-shaped quartz window 63 is disposed, and a lower edge portion of the quartz window 63 is fixed to a portion of the side wall of the vacuum processing chamber 61 (FIG. 6). The middle portion is the edge portion 6 2 a ) above the side wall. The first sealing member (for example, a ring-shaped ring) 64a made of a resin provided at the upper edge portion of the quartz window 63, and the resin provided at the upper surface portion of the side wall of the vacuum processing chamber 61 are provided. The second sealing member (for example, a ring-shaped ring or the like) 64b and the pressing member for pressing the first sealing member 64a and the second sealing member 64b are provided at the edge portion thereof. The pressing member 64 of the protrusion member 64c of the protrusion portion is configured to thereby vacuum-close the vacuum processing chamber 61. In the above case, in order to distinguish the two sealing members 64a and 64b, it is also possible to provide a crocodile member as a protruding portion between the two. A suction port 65 is provided at the side wall of the vacuum processing chamber 61. The handling object 66 is carried in and out through the transfer port 65. The vacuum processing chamber 61 is provided with a platform 67 for mounting and supporting the object to be processed, and the platform 67 is configured to be freely movable up and down. At the platform 67, a holding member 68 is provided, and the processing object 66 is restrained to be held at a specific position by the holding member. At the lower portion of the stage 67, a lamp heater 69 is provided as a lamp heating means, whereby the inside of the vacuum processing chamber 61 and the object to be processed 66 are heated and kept specific by the lamp heater. Temperature distribution. In the vacuum processing chamber 61, the reflector 70 may be provided, and in this case, the loading of the processing object 66 from the transfer port 65 and the -23-201209915 carrying-out path are avoided. The platform 67 is covered with the reflector 70 from the side and below in the same manner as the lamp heater 69. Further, the ultraviolet ray irradiation device 71 is provided above the quartz window 63, and the processing object 66 having the low dielectric constant film on the surface is provided, and the ultraviolet ray irradiation device 71 is irradiated with ultraviolet rays through the quartz window 63. And process it. At a plurality of places of the same height of the inner wall of the vacuum processing chamber 61 above the platform 67, a support member 72 is fixedly disposed, and at the support member 72, a disk as the blocking member A is placed. A blocking disk 73. The rupture disk 73 is carried into the inside of the vacuum processing chamber 61 through the transfer port 65 when the vacuum processing chamber 61 is subjected to preliminary heating. By blocking the disk by this, when the vacuum processing chamber 61 is heated by the lamp heater 69, the conduction of heat to the quartz window 63 and the ultraviolet irradiation device 7 1 is interrupted. It is produced by a material having a high heat-resistant temperature, a low thermal expansion property, a low specific gravity, and a low-cost material. For example, it is made of a ceramic such as alumina, SiC, or SiN or a metal such as Ti. In the above-described vacuum processing apparatus, the processing object 66 having the low dielectric constant film on the surface thereof is heated to a specific temperature (for example, 3 50 ° C) by the lamp heater 69, and the ultraviolet irradiation device is used. 71 is irradiated with ultraviolet rays on the processing object 66 through the quartz window 63. The low dielectric constant film is cured by irradiation with ultraviolet rays, and a low dielectric film having sufficient mechanical strength is produced on the object to be processed. Before the ultraviolet irradiation of the object to be processed, the vacuum processing chamber 61 is heated by the lamp heater 69, and the jig provided inside the processing chamber or the processing chamber is preheated to a specific temperature. At this time, the blocking disk 73 placed on the support member 72 on -24 - 201209915 blocks the conduction of heat to the quartz window 63 and the ultraviolet ray irradiation device 71. Thereby, the quartz window 63 and the ultraviolet ray irradiation device 171 are not affected by the heat for heating the vacuum processing chamber 61, and the temperature of the atmosphere below the rupture disk 73 can be uniformly maintained. In the state. When the preliminary heating is performed, since the quartz window 63 and the ultraviolet irradiation device 71 are not affected by heat, there is no possibility of being in an overheated state, and the quartz window at the vacuum processing chamber 61 made of metal can be used. The fixing portion of the edge portion of 63 (that is, the fixing portion on the edge portion 62a on the side wall of the opening portion 62) is less affected by heat, and is prevented from being deformed due to the difference caused by the difference in thermal expansion rate. A crack occurs at the periphery of the quartz window 63. Further, the ultraviolet irradiation device 71 is not exposed to heat, and does not cause thermal damage. Therefore, it is possible to sufficiently perform the preliminary heating of the vacuum processing chamber 61, and it is possible to efficiently perform the hardening treatment of the low dielectric constant film. Further, since the ultraviolet irradiation device 71 is not exposed to heat, the heat countermeasure against the ultraviolet irradiation device 71 can be simplified. Since the lamp heater 69 is used as the heat source, there is no possibility that the heat source and the object 66 are in contact with each other, and there is no possibility of occurrence of contaminants or the like. Therefore, when the low dielectric film is formed by hardening, the influence on the heat of the quartz window 63 or the ultraviolet irradiation device 71 can be eliminated, and only the necessary preliminary heating can be performed. Next, another example of the vacuum processing apparatus of the related invention of the present invention will be described with reference to FIG. In Fig. 7, the mode profile state of the whole of the vacuum processing apparatus is shown from the side of the side -25-201209915. In addition, since the vacuum processing apparatus ' differs from the vacuum processing apparatus shown in FIG. 6 described above only in the shape of the interrupting disk, the same reference numerals are attached to the same members, and the overlapping is omitted. Description. At a plurality of places of the same height of the inner wall of the vacuum processing chamber 61 above the platform 67, a support member 72 is fixedly disposed, and at the support member 72, an occlusion as the blocking member A is placed. The disk 74»the blocking disk 74' is formed in a disk shape, and a circular opening 75»the blocking disk 74 is formed at the center portion, and is passed through the conveying port 65 when the vacuum processing chamber 61 is preheated. It is carried into the inside of the vacuum processing chamber 61. By blocking the disk by this, when the vacuum processing chamber 61 is heated by the lamp heater 69, the quartz window 63 (especially the opening portion of the peripheral portion of the vacuum processing chamber 61 which is the peripheral portion of the quartz window 63) The heat conduction system of the fixing portion) and the ultraviolet irradiation device 71 is blocked. By providing such a blocking disk 74, since the peripheral portion of the quartz window 63 is not affected by heat during the preliminary heating, there is no possibility of being in an overheated state, and the metal can be placed on the metal. The influence of the heat of the fixed portion of the peripheral edge of the quartz window 63 at the upper opening portion of the vacuum processing chamber 61 is greatly reduced, and the deformation due to the difference in the coefficient of thermal expansion is surely prevented from occurring in the quartz window 63. Fragmentation occurs at the periphery. Further, since the opening 75 is formed in the blocking disk 74, the atmosphere of the entire vacuum processing chamber 61 can be uniformly heated. Therefore, it is possible to prevent the occurrence of the chipping of the periphery of the quartz window 63, and it is also possible to uniformly heat the entire interior of the vacuum processing chamber 61. When the person who applies the heat countermeasure is used as the ultraviolet irradiation device 71, -26-201209915, it is possible to provide a light-shielding disk 74 that is specialized to prevent the occurrence of chipping of the quartz window 63. The preliminary heating is performed in a state where the cracking of the periphery of the quartz window 63 is surely prevented. In the vacuum processing apparatus shown in FIG. 6 and FIG. 7 described above, an example in which the blocking disk 73 and the blocking disk 74 are placed on the support member 72 is described as an example. However, the vacuum processing device may be omitted. The support material is held on the holding member 68 of the processing object 66. Alternatively, it may be placed on the upper edge portion of the reflector 70. Further, the rupture disk may be a rupture disk whose shape is a disk shape and the thickness of the outer peripheral portion is made thicker with respect to the thickness of the central portion, and the thickness of the outer peripheral portion is thickened by being provided. The rupture disk can reliably reduce the influence of heat on the fixing portion of the peripheral edge of the quartz window 63 in the vacuum processing chamber 61 made of metal, and can uniformly heat the lower side of the rupture disk, and Preheating is performed. Further, the interrupting disk may be a blocking disk having a disk shape and formed with a plurality of small holes, and it is easier to provide a blocking disk in which a small hole is formed in this manner. The temperature rise control of the entire atmosphere of the vacuum processing chamber 61 is performed. Next, still another example of the vacuum processing apparatus of the related invention of the present invention will be described with reference to FIG. In Fig. 8, the state of the cross section viewed from the side of the entire vacuum processing apparatus is shown. In addition, since the vacuum processing apparatus differs from the vacuum processing apparatus shown in FIG. 6 and FIG. 7 described above only in the configuration of the platform, the same reference numerals are attached to the same members, and the repetition is omitted. Description. -27- 201209915 As shown in Fig. 8, inside the vacuum processing chamber 61, a platform 67' is provided with a platform 67 which is configured to be freely movable up and down. Above the platform 67, a hot plate 76 as a heat source is provided. On the hot plate 76, the object to be processed 66 is placed directly, and the back surface of the object to be processed is heated to a specific temperature. However, in Fig. 6 and Fig. 7, the lamp heater 69 is not provided. Even if the vacuum processing apparatus having the hot plate 76 as shown in Fig. 8 is the same as the case of Figs. 6 and 7, the quartz window 63 and the ultraviolet irradiation unit 7 1 are not affected by heat. Case. For the convenience of description, the vacuum processing apparatus shown in FIGS. 6 to 8 is an ultraviolet light irradiation device as a series of light energy sources, and a quartz window which is an ultraviolet light transmission window as a light-transmitting partition wall is used as a light energy shield. The breaking member is described by taking an ultraviolet shielding member as an example. However, in addition to this, even a microwave generating device 'infrared irradiation device, X-ray generating device, laser generating device, visible light generating device, etc., is applied. The light energy source 'is either a glass material other than a quartz window, a light transmissive partition wall of sapphire, CaF2, MgF2, etc. or a metal, alloy 'oxide, nitride, fluoride other than the ultraviolet shielding member. The formed light energy blocking member 'can also constitute a vacuum processing apparatus capable of performing the same processing. Further, the vacuum processing apparatus of the present invention is an example of a device for processing a processing object in which a low dielectric material is coated on a surface by a spin coater and a low dielectric film is formed. In addition, these apparatuses can be applied to a processing object in which a low dielectric film or another film is formed by a film forming apparatus such as a CVD apparatus, in the processing of -28-201209915. . In addition to this, it is also applicable to the treatment of the substrate surface itself which is not formed into a film. As a treatment method which can be carried out using the vacuum processing apparatus of the above-mentioned related invention, various treatments by ultraviolet irradiation in a vacuum of the present invention described above can be applied. [Industrial Applicability] According to the present invention, the sealing member made of resin is not exposed to light such as ultraviolet rays by using a specific sealing structure, so that there is no deterioration of the resin. There is a problem that there is no possibility that organic substances generated by decomposition of the resin are generated in the vacuum processing apparatus and contamination is caused inside the apparatus or the object to be processed. Therefore, it can be utilized in various industrial fields using a vacuum processing apparatus which is treated by light irradiation in a vacuum processing chamber, and for example, it can be utilized in an industrial field in which a low dielectric film is produced. BRIEF DESCRIPTION OF THE DRAWINGS [Fig. 1] A conceptual diagram showing a schematic example of a configuration of a vacuum processing apparatus of the prior art. Fig. 2 is a schematic view showing another example of the configuration of the vacuum processing apparatus of the prior art. Fig. 3 is a view showing a modest display of another example of the configuration of the vacuum processing apparatus of the prior art. Fig. 4 is a view showing a schematic representation of one of the embodiments of the vacuum processing apparatus of the present invention. -29-201209915 [Fig. 5] A commemorative view showing a modest display of one of the constitutions of the film forming apparatus of the present invention. Fig. 6 is a view showing a schematic representation of one embodiment of the configuration of the vacuum processing apparatus of the related invention of the present invention. Fig. 7 is a view showing a schematic representation of another embodiment of the configuration of the vacuum processing apparatus according to the present invention. Fig. 8 is a conceptual view showing another embodiment of the configuration of the vacuum processing apparatus of the related invention of the present invention. [Description of main component symbols] 1 1 : Frame 1 2 : Light-transmissive partition 1 3 : Sealing member 14 : Platform 1 5 : Wafer 2 1 : Frame 22 : Quartz window 2 3 _ Sealing member 24 : Ultraviolet irradiation device 25: platform 2 6 : wafer 31 : frame 32 : quartz window 3 3 : sealing member 3 4 : ultraviolet irradiation device -30 - 201209915 3 5 : wafer support platform 3 6 : wafer 3 7 : blocking member 41 : vacuum processing chamber 42 : wafer 43 : platform 44 : light transmissive partition (quartz window) 45 : light irradiation device (ultraviolet irradiation device) 46 a : first sealing member 46 b : second sealing member 47 : pressing member 47 a :锷 member 51: coating device 52: vacuum processing device 53: loading/unloading chamber 54: conveying chamber 55: device 6 1 : vacuum processing chamber 62: opening portion 62a: edge portion 63: quartz window 64: pressing member 64a: First sealing member 64b: second sealing member 64c: 锷 member - 31 - 201209915 65 : conveying port 66 : processing object 67 : platform 6 8 : holding member 69 : lamp heater 70 : reflector 7 1 : ultraviolet irradiation Device 72: support material 73: rupture disk 74: rupture disk 75: opening 76: hot plate - 32