JP4699272B2 - Board holder - Google Patents

Description

  The present invention relates to a substrate holder, and more particularly to a substrate holder that supports a substrate so that processing can be performed up to an outer peripheral region on the substrate using a mechanical clamp method in a dry process.

  When manufacturing a wafer level package such as an optical semiconductor device typified by a CCD device, glass or the like is used to protect the semiconductor substrate and a device formed on the semiconductor substrate side made of a semiconductor such as silicon. An insulating substrate made of a member having the above insulating properties may be attached. Then, when forming a through wiring or the like later on the semiconductor substrate side of the substrate on which the semiconductor substrate and the insulating substrate are bonded together, a fine hole is formed by a dry process, an insulating layer is formed, and insulation is performed. There are processes such as etching the layer.

  Such a dry process is roughly divided into a film forming process (deposition) and a surface modifying process. Among them, a process using plasma (hereinafter referred to as “plasma process”) is, for example, sputtering or Examples include plasma CVD (chemical vapor deposition), plasma spraying, plasma etching, and plasma ashing.

  In the case of these plasma treatments, the substrate temperature rises due to heating by plasma irradiation, which may affect the formed device. Therefore, it is necessary to cool the substrate and control it to a required temperature. In general, substrate cooling is performed by cooling a stage of an apparatus on which a substrate is arranged by a chiller circulator or the like and sealing a cooling He gas or the like between the cooled stage and the substrate. That is, the He gas is cooled by being sealed between the cooled stage and the substrate, and further, the substrate is cooled by the cooled He gas being in direct contact with the back surface of the substrate. As a method for sealing the He gas for cooling and fixing the substrate, there are a method using an electrostatic chuck (hereinafter referred to as an ESC (Electro Static Chuck) method) and a method called a mechanical clamp. .

  This ESC method is a method in which a substrate is electrostatically attracted (electrostatically attracted) by applying a voltage to the substrate and moving operating ions, sealing He gas for cooling the substrate, and cooling the substrate ( For example, see Patent Documents 1 and 2).

  The mechanical clamp is a method of sealing the substrate cooling He gas by physically pressing down the substrate outer peripheral region and cooling the substrate (for example, see Patent Document 3). This method can be used with an insulating substrate basically regardless of the amount of working ions in the substrate.

  Further, there has been proposed a semiconductor wafer size conversion holder that can be applied to a semiconductor wafer to change its size and be processed by various processing apparatuses (see Patent Document 4).

  However, in the case of the ESC method, it cannot be adsorbed unless working ions are included in the substrate to be used. Therefore, although it can adsorb | suck with a metal, a semiconductor, etc., since an operation | movement ion is very few with an insulating board | substrate, adsorption | suction is difficult. Therefore, there exists a problem that it cannot use for the board | substrate with which the insulating board | substrate is bonded by the back side.

  Further, in the case of a mechanical clamp, it is necessary to press the outer peripheral area of the substrate processing surface by about 3 to 5 mm, so that the clamp area that is pressed by the clamp becomes a dead space and cannot be processed. Therefore, there is a problem that the processing range of the substrate is reduced and the number of chips taken is reduced. Further, since there is a step due to the clamp on the processing surface, there is a problem that the plasma is distorted by this structure and affects the process. In addition, when the clamp area is reduced, the cooling gas leaks into the apparatus processing chamber (etching chamber). Therefore, the chamber pressure cannot be maintained, or the cooling gas is mixed with the etching gas, so that the target processing is performed. There is a problem that can not be. Further, the leakage of the cooling gas has a problem that the cooling efficiency of the substrate is deteriorated.

  In addition, the technique described in Patent Document 4 does not support a substrate so that processing can be performed using plasma up to the outer peripheral region on the substrate forming the object in a dry process using a mechanical clamp method. Absent. In addition, the technique described in Patent Document 4 does not consider the cooling of the temperature of the substrate, which is increased by heating by plasma irradiation, and controlling it to the required temperature, so that the He gas for cooling is sealed. The substrate cannot be supported while stopping, and the He gas may leak into the processing apparatus from the step formed on the inner peripheral edge of the ring-shaped main body when the substrate is cooled.

Therefore, in a dry process using a mechanical clamp method, a proposal has been found regarding a substrate holder that supports this substrate so that, for example, processing using plasma can be performed up to the outer peripheral region on the substrate constituting the object to be processed. It has not been.
Japanese Patent Laid-Open No. 3-89745 Japanese Patent Laid-Open No. 3-91234 JP-A-4-128308 Japanese Patent Laid-Open No. 7-240455

  The present invention has been made in view of the above circumstances, and in a dry process using a mechanical clamp method, a substrate holder capable of performing a process using plasma up to an outer peripheral region on a substrate that constitutes an object to be processed. The purpose is to provide.

The substrate holder according to claim 1 of the present invention is a substrate holder that is disposed in a dry process apparatus and supports a substrate to be processed using plasma, so that the processing surface of the substrate is exposed. the first member, and a second member having an adhesive portion for fixing the first member with a non-treated surface of the substrate with a portion for accommodating the substrate, Ri Tona, said second member, said substrate and said first member, while supporting via the adhesive portion, wherein Rukoto used is placed on the placed stage the dry process in the apparatus.
The substrate holder according to a second aspect of the present invention is the substrate holder according to the first aspect, wherein the adhesive portion is a UV peeling type adhesive or a thermal foaming type adhesive.
The substrate holder according to a third aspect of the present invention is the substrate holder according to the first aspect, wherein the second member has UV transparency.
A substrate holder according to a fourth aspect of the present invention is the substrate holder according to the first aspect, wherein the first member includes a portion that prevents a plasma from flowing around corresponding to an outer peripheral portion of the substrate.

In the substrate holder of the present invention, the first member having a portion for accommodating the substrate so that the processing surface of the substrate is exposed, and the adhesive portion that fixes the first base material together with the non-processing surface of the substrate It consists of the 2nd member provided with. Thereby, the second member supports the substrate and the first member via the adhesive portion. Further, the second member in such a supported state is used by being placed on a stage arranged in the dry process apparatus.
Therefore, after a board | substrate is arrange | positioned in the site | part which accommodates the board | substrate of a 1st member, a 2nd member is bonded together via an adhesion part so that the non-processed surface of a board | substrate and a 1st member may be straddled. Thus, the first member and the substrate are integrally fixed.

Therefore, the conventional problem in the dry process, that is, when the substrate is directly supported by a support means such as a mechanical clamp, the outer peripheral region of the substrate is changed by the plasma treatment due to the change in the supported state of the outer peripheral region of the substrate. The problem of affecting the situation is resolved.
For this reason, in the substrate holder of the present invention, the substrate is indirectly supported by pressing the first member fixed integrally with the substrate, so that the substrate is directly pressed by support means such as a mechanical clamp. There is nothing.

As a result, the substrate holder becomes a clamp area and is pressed by a mechanical clamp, etc., so that the substrate is indirectly supported, and the outer peripheral area is not affected by the mechanical clamp as well as the inner peripheral area of the substrate. Plasma processing can be performed. Therefore, the generation of dead space that is not exposed to plasma is minimized, and the plasma processing can be performed as widely as possible to the outer peripheral area of the substrate. Accordingly, it is possible to provide a substrate holder that can be supported so that the processing range of the substrate is expanded and the number of chips taken per wafer is increased.
In the substrate holder of the present invention, the second member is bonded so as to straddle the non-processed surface of the substrate and the first member, that is, the second member includes the substrate and the first member, and the adhesive portion. The structure which supports is adopted, and it is mounted and used on the stage arrange | positioned in the dry process apparatus. Therefore, even if various devices (for example, devices such as CCD, CMOS, optical sensor, pressure sensor, acceleration sensor, and gyro) are formed on the non-processed surface of the substrate in advance, the second member exists, There is no risk of exposure of various devices to the contained plasma.
Further, in the substrate holder of the present invention, the configuration in which the second member is bonded so as to straddle the non-processed surface of the substrate and the first member is the heat generated when the substrate and the first member are exposed to the plasma treatment. Through the second member, it is transmitted to the stage on which the second member is placed to prevent the substrate from being heated excessively. In particular, it becomes possible to control the temperature of the substrate through the second member by flowing a cooling gas on the non-processing surface side of the substrate. Therefore, since the substrate holder of the present invention does not have a possibility that the substrate is excessively heated, even if various devices are formed in advance on the non-processed surface of the substrate, it is possible to avoid thermal influence on the various devices.

Hereinafter, a substrate holder according to the present invention will be described with reference to the drawings.
FIG. 1 is a schematic cross-sectional view showing an example of a substrate holder according to the present invention.
The substrate holder 1 (1A) includes a first member 11 and a second member 12.
That is, the substrate holder 1 (1A) of this embodiment is configured by joining the first member 11 and the second member 12 together.

The 1st member 11 can be shown in FIG. 2 as an example.
FIG. 2 is a schematic cross-sectional view showing the first member of the substrate holder according to the present invention.
As shown in FIG. 2, the first member 11 is a portion (hereinafter referred to as “accommodating portion”) that accommodates the substrate 2 so that the treatment surface 2 a exposed to the plasma of the substrate 2 that forms the object to be treated is exposed. .) 10 is provided. As the first member 11, it is desirable to use an insulating member such as quartz glass, ceramic, or SiC in consideration of the influence of, for example, plasma discharge.

  The first member 11 is preferably provided with a portion 14 (hereinafter referred to as “around prevention portion”) that prevents plasma from flowing around the outer periphery of the substrate 2. The wraparound prevention portion 14 is a barb that protrudes toward the accommodation portion 10 so as to slightly cover the outer peripheral area of the substrate 2 accommodated in the accommodation portion 10.

  That is, during etching, the plasma may circulate from the gap between the substrate holder 1 and the substrate 2 toward the second member 12 joined to the first member 11, and the second member 12 may be consumed (deteriorated). There is. In the illustrated example, the wraparound prevention portion 14 is provided on the processing surface 2 a side of the substrate so that the outer peripheral area on the substrate 2 is sandwiched between the second member 12. The size (width) d of the wraparound prevention unit 14 is preferably 1 mm or less (0 <d ≦ 1 mm), for example.

  Moreover, it can also suppress that the 2nd member 12 wears out (deteriorates) and cuts by putting in a return like the wraparound prevention part 14 in this way. Accordingly, when the temperature of the substrate 2 is controlled using the cooling gas on the processing surface side of the substrate 2, the cooling gas is suppressed from leaking into the plasma processing chamber, and the cooling efficiency of the substrate 2 is improved.

The 2nd member 12 can be shown in FIG. 3 as an example.
FIG. 3 is a schematic cross-sectional view showing a second member of the substrate holder according to the present invention.
As shown in FIG. 3, the second member 12 includes an adhesive portion 13 that fixes the first member 11 together with the non-processing surface 2 b of the substrate 2 that forms the object to be processed.
The thickness of the second member 12 is preferably as thin as possible in order to improve heat conductivity, and is preferably about 100 μm.

The second member 12 is bonded to the first base material 11 and the substrate 2 by an adhesive portion 13 made of a material that can be peeled later.
Thus, by bonding the second member 12 to the first base material 11 and the substrate 2, the first member 11 and the substrate 2 are integrally fixed by the second member 12.

The adhesive part 13 is a thing that can be peeled off by light or heat stimulation, for example, a UV peeling adhesive such as Adwill manufactured by Lintec Corporation, or a thermal firing adhesive such as Riva Alpha manufactured by Nitto Denko Corporation. desirable.
By using a UV peelable adhesive as the adhesive portion 13, when the second member 12 becomes unnecessary, the second member 12 can be easily peeled off by irradiating with ultraviolet rays. Moreover, it can process, without contaminating the board | substrate 2 by using the UV peeling adhesive which has a track record with a dicing sheet etc. as the adhesion part 13. FIG.

The second member 12 is desirably UV transmissive.
Thereby, when the second member 12 becomes unnecessary later by using the UV peeling type adhesive as the adhesive portion 13, the second member 12 can be attached without irradiating the device formed on the substrate with ultraviolet rays. It can be easily peeled off.

The substrate 2 is a substrate made of a material that cannot be adsorbed by the ESC method. For example, as shown in FIG. 4, the first substrate 20A and the second substrate 20B are bonded and fixed via an adhesive 20C. Things.
FIG. 4 is a schematic cross-sectional view showing a substrate supported by the substrate holder according to the present invention.

The first substrate 20A is a semiconductor substrate made of a semiconductor such as silicon, germanium, GaAs, InP, or ZnTe. The surface to be bonded to the second substrate 20B has, for example, a CCD, CMOS, optical sensor, pressure sensor, acceleration, etc. Devices such as sensors and gyros are formed.
The second substrate 20B protects a device or the like formed on the first substrate 20A side or reinforces the first substrate 20A. For example, the second substrate 20B is an insulating material made of an insulating member such as quartz glass or ceramic. It is a substrate. The thickness of the second substrate 20B is desirably in the range of 300 μm to 1000 μm.
The adhesive 20C is a member that bonds and fixes the first substrate 20A and the second substrate 20B, and is not particularly limited, and examples thereof include an epoxy type and a silicone type.

  Further, as shown in the figure, the adhesive 20C may be arranged so as to provide a space 20D in a predetermined region on one surface of the first substrate 20A on which the device is formed. The space 20D is a three-dimensional space such as a cavity or a groove, and the cavity is formed when the device cannot directly contact the device. If possible, it is not necessarily formed. The space 20D can also be relaxed by absorbing the stress in the case of joining in the space 20D.

Next, a method for supporting a substrate using the substrate holder according to the present invention will be described with reference to the drawings.
FIG. 5 is a schematic cross-sectional schematic view showing a state in which the substrate is supported by the first member and the second member of the substrate holder according to the present invention.
First, the board | substrate 2 is arrange | positioned in the accommodating part 10 of the 1st member 11 so that the process surface 2a of the board | substrate 2 may be exposed. Next, the second member 12 is bonded via the adhesive portion 13 so as to straddle the non-processed surface 2b of the substrate 2 and the first base material 11, and the first member 11 and the substrate are bonded by the second member 12. 2 is fixed integrally.

  Although not shown, for example, the substrate holder 1 is disposed in a vacuum chamber as a processing apparatus, and the first member 11 of the substrate holder 1 disposed on the stage 3 is pressed by the mechanical clamp 4 as shown in FIG. Then, the substrate 2 is supported, and a process such as forming a through-wiring is performed on the processing surface 2a of the substrate 2 that forms the object to be processed by a dry process such as plasma processing. Specifically, the treatment using plasma by the dry process is silicon etching, film formation or etching of a conductor / insulating layer, ashing, or the like.

  At this time, the internal space of the vacuum chamber needs to be slightly larger than the substrate (for example, a wafer) that forms the object to be processed so that the substrate holder 1 can be installed. In order to sufficiently seal the cooling gas to a certain extent, the clamp area L of the substrate holder 1 needs to be about 5 to 10 mm, and the size of the substrate holder 1 is about 1 to 2 cm larger than the substrate 2. Specifically, for example, in the case of an apparatus having a 6-inch effective processing range, an apparatus in which a substrate of about 7 to 8 inches can be accommodated in the chamber is used.

  In this way, by using a dry process apparatus having an internal space larger than the size of the substrate holder 1 and the substrate 2, the dead space in the clamp area that is not exposed to plasma while using the mechanical clamp method is minimized, Using the plasma up to the outer peripheral area of the processing surface 2a of the substrate 2 constituting the object to be processed, it is possible to perform plasma processing in the same manner as the inner peripheral area. That is, the conventional support means such as a mechanical clamp is configured to press the substrate directly. However, in the present invention, the clamp 4 is directly applied to the substrate 2 by pressing the first member 11 of the substrate holder 1. Since it does not touch, there is no possibility that the clamp area becomes a dead space.

Therefore, the conventional problem in the dry process, that is, when the substrate is directly supported by a support means such as a mechanical clamp, the outer peripheral region of the substrate is changed by the plasma treatment due to the change in the supported state of the outer peripheral region of the substrate. The problem of affecting the situation is resolved.
That is, in the substrate holder of the present invention, since the substrate is indirectly supported by pressing the first member fixed integrally with the substrate, the substrate is directly pressed by a support means such as a mechanical clamp. It will never be.

  As a result, the present invention does not directly press down the substrate constituting the object to be processed by a support means such as a mechanical clamp, which is one of the causes of generating a dead space in the plasma processing, and the substrate holder serves as a clamping area. The substrate is indirectly supported by the structure, and the plasma processing can be performed on the outer peripheral area as well as the inner peripheral area of the substrate without being affected by the mechanical clamp.

  Therefore, the generation of the dead space that is not exposed to the plasma is suppressed as much as possible, so that a region where the plasma processing can be performed can be secured widely up to the outer peripheral region on the processing surface of the substrate. Therefore, according to the present invention, it is possible to provide a substrate holder that can be supported so that the processing range of the substrate is expanded, and as a result, the number of chips taken per wafer is increased.

  Further, the above-described configuration of the present invention can reduce the degree of plasma processing in the outer peripheral region and the inner peripheral region of the substrate, so that the uniformity and homogeneity of plasma processing can be improved over a wide range of the substrate. Can also be planned. In addition, since the second member 12 is bonded so as to straddle the non-processing surface 2b of the substrate 2 and the first member 11, for example, a cooling gas is allowed to flow on the non-processing surface 2b side of the substrate 2. When the temperature of the substrate 2 is controlled, the substrate 1 can be supported without the cooling gas leaking into the processing apparatus.

  The substrate holder of the present invention is not limited to a substrate having a structure in which a semiconductor substrate such as silicon and an insulating substrate such as glass are bonded together, and is also used for a substrate made of a member that is difficult to be adsorbed by the ESC method. Is possible.

  Further, unlike the conventional ESC method, the substrate holder of the present invention has an advantage that it can be used even for a substrate having a particularly large warp, since the substrate material and the substrate state are not limited. Furthermore, by changing the shape of the substrate holder, in addition to the circular substrate (wafer) described above, for example, in addition to chips cut into rectangles and various square substrates, special freedom like a printed circuit board is possible. It can be applied to a substrate having a high degree of shape.

Further, the first member is not limited to the one in which the plasma wrap-around preventing portion is provided on the processing surface side of the substrate so as to sandwich the substrate with the second member.
Therefore, for example, as shown in FIG. 6, the substrate holder 1 (1 </ b> B) includes the accommodating portion 10 in which the substrate 2 is disposed so that the processing surface 2 a of the substrate 2 is exposed, and the outer peripheral area of the substrate 2 is set to the second area. Adhesive for fixing the first base material 21 together with the first member 21 provided with the plasma wraparound prevention part 24 on the non-processing surface 2b side of the substrate and the non-processing surface 2b of the substrate 2 so as to cover from the member 22 side. It is good also as what is comprised from the 2nd member 22 provided with the part 23. FIG.

  As the first member 21, it is desirable to use an insulating member such as quartz glass, ceramic, or SiC in consideration of the influence of plasma discharge, for example, as with the first member 11.

The second member 22 is made of, for example, a PET film, as in the second member 12, and the thickness thereof is preferably in the range of 20 μm to 100 μm, and more preferably UV transmissive.
As the adhesive part 13, as in the adhesive part 13, for example, a UV peeling adhesive such as Adwill made by Lintec or a Ritto made by Nitto Denko Co., Ltd. is used so that it can be peeled later by light or heat stimulation. It is desirable to use a thermal firing type adhesive such as Alpha.

  In this way, the wraparound prevention part 24 is provided so as to cover the outer peripheral area of the substrate 2 from the second member 22 side, and the second member 22 is bonded so as to straddle the first base material 21 and the surface to be processed of the substrate 2. With this configuration, the wrap-around prevention unit 24 does not appear on the processing surface 2a of the substrate, and the plasma processing can be performed on the outer peripheral region as well as the inner peripheral region of the substrate. Therefore, there is no occurrence of a dead space that is not exposed to plasma, and the plasma processing can be performed as widely as possible to the outer peripheral area of the substrate.

It is a schematic cross-sectional schematic diagram which shows the substrate holder which concerns on this invention. It is a schematic cross-sectional schematic diagram which shows the 1st member of the substrate holder which concerns on this invention. It is a schematic sectional drawing which shows the 2nd member of the substrate holder which concerns on this invention. It is a schematic cross-sectional schematic diagram which shows the board | substrate supported by the board | substrate holder which concerns on this invention. It is a schematic sectional schematic diagram which shows a mode that a board | substrate is supported by the 1st member and 2nd member of the board | substrate holder which concerns on this invention. It is a schematic cross-sectional schematic diagram which shows the other substrate holder which concerns on this invention.

Explanation of symbols

1 (1A, 1B) substrate holder, 2 substrate, 2a treated surface, 2b non-treated surface, 3 stage, 4 mechanical clamp, 10 accommodating portion, 11, 21 first member, 12, 22 second member, 13, 23 adhesive Part, 14, 24 A wraparound prevention part.

Claims (4)

A substrate holder that is disposed in a dry process apparatus and supports a substrate to be processed using plasma,
A first member having a portion for accommodating the substrate so that a processing surface of the substrate is exposed, and a second member having an adhesive portion for fixing the first member together with the non-processing surface of the substrate;
Tona is,
Said second member comprises a substrate and said first member and the substrate, while supported via the adhesive portion, wherein Rukoto used is placed on the placed stage the dry process in the apparatus holder.   The substrate holder according to claim 1, wherein the adhesive portion is a UV peeling type adhesive or a thermal foaming type adhesive.   The substrate holder according to claim 1, wherein the second member has UV transparency.   2. The substrate holder according to claim 1, wherein the first member includes a portion that prevents a plasma from flowing around corresponding to an outer peripheral portion of the substrate.

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