JPH042146A - Wafer holder - Google Patents
Wafer holderInfo
- Publication number
- JPH042146A JPH042146A JP2102701A JP10270190A JPH042146A JP H042146 A JPH042146 A JP H042146A JP 2102701 A JP2102701 A JP 2102701A JP 10270190 A JP10270190 A JP 10270190A JP H042146 A JPH042146 A JP H042146A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- holder
- thinned
- diameter
- held
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 17
- 229910052751 metal Inorganic materials 0.000 abstract description 17
- 239000002184 metal Substances 0.000 abstract description 17
- 238000005259 measurement Methods 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 52
- 238000000034 method Methods 0.000 description 9
- 239000010935 stainless steel Substances 0.000 description 6
- 229910001220 stainless steel Inorganic materials 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は半導体装置の製造に係り、特にGaAsl0
プロセスの裏面工程及びテスト・アセンブリ工程のウェ
ハハンドリングに使用するウェハ保持具に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to the production of semiconductor devices, and in particular to the production of semiconductor devices, particularly GaAsl0
The present invention relates to a wafer holder used for wafer handling in back side processes and test/assembly processes.
従来、GaAsl0プロセスの裏面工程では25μm〜
150μmlc薄板化加工した()aAaウェハをハン
ドリングするためにステンレス製ピンセットが用イラれ
ていた。第3図は薄板化加工し九〇aAsウェハのハン
ドリング説明図を示す。ウェハ(2)の周辺部をステン
レス製ビンセット(4)を用いて、つまみ第4図(a)
、 (b)に示した専用平置きケース(5)または(
6)に収納して運搬あるいは保管をしていた。Conventionally, the back side process of GaAsl0 process is 25 μm ~
Stainless steel tweezers were used to handle the ()aAa wafer that had been thinned to 150 μm lc. FIG. 3 shows an explanatory diagram of handling of a 90aAs wafer processed into a thin plate. Using a stainless steel bottle set (4), pinch the periphery of the wafer (2) as shown in Figure 4 (a).
, Dedicated flat case (5) shown in (b) or (
6) was used for transportation or storage.
次に動作について説明する。GaAsウェハ(2)の表
面にFET、抵抗、配線、コンデンサー等を形成した後
、保護膜を形成してガラス板又はセラミック板上にウェ
ハ(2)の裏面を上にして貼シ合わせる。この状態を第
5図←)に示す。次に研削、ポリッシュ、エツチングお
よびラッピング等によ[GaA8ウェハ(7)を薄板化
加工する。薄板化加工後のGaA3ウェハ(2)厚は機
種によって異なるが、25μm〜150μmである。こ
の状態を第5図(1,)に示す。次に、ガラス板又はセ
ラミック板(9)からGaAsウェハ(7)をはがし、
保護膜と接着剤を除去・洗浄してウェハプロセスは終了
する。この薄板化ウェハ(2)の周辺部をステンレス製
ピンセット(4)によシつまみ、第4図(a) 、 (
1))に示した専用平置きケースに収納しテスト・アセ
ンブリ工程へ進む。テスト工程ではやはシスチンレス製
ピンセット(4)によシ薄板化つエノ直2)周辺部をつ
まみ測定ステージに載せる。テスト終了後ステンレス製
ピンセット(4)により薄板化ウェハ周辺部をつまみ、
測定ステージから上記の専用平置きケース(5)または
(6)に収納し保管する。Next, the operation will be explained. After forming FETs, resistors, wiring, capacitors, etc. on the surface of the GaAs wafer (2), a protective film is formed and the wafer (2) is pasted onto a glass plate or ceramic plate with the back side facing up. This state is shown in Figure 5←). Next, the GaA8 wafer (7) is processed into a thin plate by grinding, polishing, etching, lapping, etc. The thickness of the GaA3 wafer (2) after the thinning process varies depending on the model, but is 25 μm to 150 μm. This state is shown in FIG. 5 (1,). Next, peel off the GaAs wafer (7) from the glass plate or ceramic plate (9),
The wafer process is completed by removing and cleaning the protective film and adhesive. Grip the peripheral part of this thinned wafer (2) with stainless steel tweezers (4).
1) Store in the dedicated flat case shown in (1)) and proceed to the test assembly process. In the test process, the peripheral part of the thin plate was picked up using cystine-free tweezers (4) and placed on the measurement stage. After the test, pinch the periphery of the thinned wafer with stainless steel tweezers (4).
It is stored from the measurement stage in the dedicated flat case (5) or (6) mentioned above.
従来の薄板化ウェハのハンドリングは上記の様にステン
レス製ピンセットを用いてウェハ周辺部をつまんでウェ
ハの移動を行なっていたために、作業時に熟練と慎重さ
が必要であシ、通常()aAsウェハの厚みは〜600
pmあるために問題にならないが、25〜150μmの
薄板化ウエノ・は非常に割れ易いので、少しでも無理な
力が加わったりするとたちまち割れてしまうため、熟練
した作業者が慎重にウェハを扱わなければならないので
、能率が悪くウェハの割れ率が非常に高いという問題点
があった。Conventional handling of thinned wafers involves using stainless steel tweezers to pinch the wafer's periphery to move the wafer, which requires skill and caution during the process. The thickness is ~600
Although this is not a problem due to the presence of PM, thin wafers of 25 to 150 μm are extremely fragile and will break immediately if even the slightest amount of force is applied, so skilled workers must handle the wafers carefully. Therefore, there were problems in that efficiency was poor and the wafer breakage rate was extremely high.
この発明は上記のような問題点を解決するためになされ
たもので、薄板化ウェハのハンドリングが通常のウェハ
同様に扱えるようにできるウェハ保持具を得ることを目
的とする。The present invention was made to solve the above-mentioned problems, and an object of the present invention is to provide a wafer holder that allows thinned wafers to be handled in the same way as normal wafers.
第1の発明に係るウェハ保持具は、ドーナツ状の金属円
板の内側に薄板化GaAθウェハを置き、ウェハの外周
部とドーナツ状の金属円板の内周部とを同時にドーナツ
状のテープを用いて貼り付けたものである。In the wafer holder according to the first invention, a thinned GaAθ wafer is placed inside a donut-shaped metal disk, and a donut-shaped tape is attached to the outer circumference of the wafer and the inner circumference of the donut-shaped metal disk at the same time. It was pasted using
また、第2の発明に係るウェハ保持具は、ドーナツ状の
金属円板の内側に、ウェハの外周部とドーナツ状の金属
円板の内周部とが重なるようにウェハを置き、重なった
部分を熱圧着、はんだ付け、又は超音波溶接によって貼
υ合わせたものである。Further, in the wafer holder according to the second invention, the wafer is placed inside the donut-shaped metal disk so that the outer circumference of the wafer and the inner circumference of the donut-shaped metal disk overlap, and the overlapping portion is are pasted together by thermocompression bonding, soldering, or ultrasonic welding.
この発明におけるウェハ保持具は、ドーナツ状の金属円
板が薄板化ウェハを支える枠の役割を果し、これによっ
て通常使用されているカセットに収納することが可能に
なり、またドーナツ状のテープは薄板化ウェハとドーナ
ツ状金属円板とを貼シ合わせる役割を果す。In the wafer holder of the present invention, a donut-shaped metal disk serves as a frame to support the thinned wafer, and this allows it to be stored in a commonly used cassette. It serves to bond the thinned wafer and donut-shaped metal disk together.
以下、この発明の一実施例を図について説明する0
第1図(−) 、 (b)はこの発明の一実施例である
ウェハ保持具の平面図および断面図で、図中、(1)は
金属円板で、材質はステンレス、銅、アルミニウム、銀
、真鍮、ニッケル、スズまたは鉄でおる。または、これ
らの金属のうち少なくとも1つの金属を含む合金あるい
はプラスチックであってもよい。Hereinafter, one embodiment of the present invention will be explained with reference to the drawings. Figures 1 (-) and (b) are a plan view and a sectional view of a wafer holder that is an embodiment of the present invention. is a metal disc made of stainless steel, copper, aluminum, silver, brass, nickel, tin, or iron. Alternatively, it may be an alloy or plastic containing at least one of these metals.
外径はlOOミリ(4インチ)、内径は74ミリ(3イ
ンチ−0,5ミリ)である。(2)は薄板化GaAsウ
ェハ(3インチ)で、厚みは25〜150μmである。The outer diameter is 10 mm (4 inches) and the inner diameter is 74 mm (3 inches - 0.5 mm). (2) is a thinned GaAs wafer (3 inches) with a thickness of 25 to 150 μm.
表面には、FET、抵抗、配線およびコンデンサー等が
形成されている。(3)は金属円板(1)の内周部と薄
板化()aAsウェハとにまたがって貼シ付けられたテ
ープである。FETs, resistors, wiring, capacitors, etc. are formed on the surface. (3) is a tape pasted across the inner circumferential portion of the metal disk (1) and the thinned (aAs) wafer.
次に動作について説明する。Next, the operation will be explained.
第1図(a)または(b)において、金属円板(1)は
薄板化GaAsウェハ(2)をドーナツ状テープ(3)
とともに支え、更にランダムに湾曲した薄板化GaAθ
ウェハ(2)を平面状に保つ。その結果ランダムに湾曲
していた薄板化GaAsウェハ(2)を通常使用してい
るカセットに収納することができるので、カセットから
カセットへの自動測定装置への適用が可能になる。In FIG. 1(a) or (b), a metal disk (1) is attached to a thin GaAs wafer (2) with a donut-shaped tape (3).
thinned GaAθ that is supported and further curved randomly.
Keep the wafer (2) flat. As a result, the randomly curved thinned GaAs wafer (2) can be stored in a normally used cassette, making it possible to apply it to an automatic cassette-to-cassette measuring device.
この発明の他の実施例を第2図(a) f (1))に
示す。Another embodiment of the invention is shown in FIG. 2(a) f (1)).
第2図(a)はウェハ保持具の平面図、(b)はその断
面図である。金属円板(1)の材質と外径は上記実施例
と同様で、内径は76ミリ(3インチ+0.5〜1ミリ
)である。薄板化()aAθウェハ(2)の外周部と金
属円板(1)の内周部とが重なっておシ、裏面側は面一
になっている。重なっている部分の接続は、熱圧着、は
んだ付け、又は超音波溶接で行なう。FIG. 2(a) is a plan view of the wafer holder, and FIG. 2(b) is a sectional view thereof. The material and outer diameter of the metal disk (1) are the same as those in the above embodiment, and the inner diameter is 76 mm (3 inches + 0.5 to 1 mm). The outer periphery of the thinned ()aAθ wafer (2) and the inner periphery of the metal disk (1) overlap, and the back side is flush. The overlapping parts are connected by thermocompression, soldering, or ultrasonic welding.
以上のようにこの発明によれば、ドーナツ状の金属円板
とドーナツ状のテープによシ薄板化GaAsウェハを支
持するようにしたので、ランダムに湾曲している上に割
れ易い薄板化GaAsウェハを面一な通常のウェハと同
様にハンドリングできるようになった。具体的には、薄
板化GaAsウェハが3インチの場合は4インチの金属
円板で支持することによって4インチ用のカセットで運
搬や惺管ができ、さらに自動測定様にも適用できる。ま
た、割れ易い薄板化GaAsウェハを直接されることが
ないのでウェハ割れ率が大幅に減少する。即ち、作業能
率の向上、歩留りの向上、さらには、コストの低減に繋
がる。As described above, according to the present invention, since the thinned GaAs wafer is supported by the donut-shaped metal disk and the donut-shaped tape, the thinned GaAs wafer is not only randomly curved but also easily broken. can now be handled in the same way as regular wafers. Specifically, when a 3-inch thinned GaAs wafer is supported by a 4-inch metal disk, it can be transported and piped using a 4-inch cassette, and it can also be applied to automatic measurements. Further, since the thinned GaAs wafer, which is easily broken, is not directly touched, the wafer cracking rate is greatly reduced. That is, it leads to improvement in work efficiency, improvement in yield, and further, reduction in cost.
第1図(a) 、 (1))はこの発明の一実施例であ
るウェハ保持具の平面図および断面図、第2図(a)
、 (b)はこの発明の他の実施例であるウェハ保持具
の平面図および断面図、第3図は従来の薄板化GaAs
ウェハとピンセットでつかむ状態を示した図、第4図(
a) 、 (b)は従来の薄板化GaAsウェハを収納
する専用平置きケースの斜視図で、(a)は6枚用、(
b)は1枚用である。第5図(a) 、 (1:、)は
GaAsウェハの薄板化加工前および加工後の断面図で
ある。
図中、(1)はドーナツ状の金属円板、(2)は薄板化
GaAsウェハ、(3)はドーナツ状のテープである。
なお、図中、同一符号は同一 または相当部分を示す。FIGS. 1(a) and (1)) are a plan view and a sectional view of a wafer holder which is an embodiment of the present invention, and FIG. 2(a)
, (b) is a plan view and a sectional view of a wafer holder according to another embodiment of the present invention, and FIG. 3 is a conventional thinned GaAs
Figure 4 shows the state in which the wafer is held with tweezers (
a) and (b) are perspective views of a dedicated flat case for storing conventional thinned GaAs wafers; (a) is for 6 wafers, (
b) is for one sheet. FIG. 5(a), (1:,) is a cross-sectional view of a GaAs wafer before and after thinning processing. In the figure, (1) is a donut-shaped metal disk, (2) is a thinned GaAs wafer, and (3) is a donut-shaped tape. In addition, the same symbols in the figures indicate the same or equivalent parts.
Claims (2)
意のウェハ径と同一外径を有し、その中央部に開口して
設けられたウェハ導入部を有する中空円板状の保持体、
この保持体に固定され前記ウェハ導入部に導入された前
記ウェハを支持する支持体を備えたことを特徴とするウ
ェハ保持具。(1) A hollow disc-shaped holder having the same outer diameter as a standardized arbitrary wafer diameter larger than the wafer diameter to be held, and having a wafer introduction part opened in the center thereof;
A wafer holder comprising a support fixed to the holder and supporting the wafer introduced into the wafer introducing section.
意のウェハ径と同一外径を有する円板状の保持体、この
保持体の中央部に設けられ前記保持されるウェハ径より
も大きく、かつ、その一主面側から前記ウェハ厚さと同
一深さを有するウェハ収容部、前記保持体に設けられ前
記保持されるウェハが前記ウェハ収容部に収容された時
、前記ウェハの集積回路部が内包される開口部を備えた
ことを特徴とするウェハ保持具。(2) A disc-shaped holder having the same outer diameter as a standardized arbitrary wafer diameter larger than the diameter of the wafer to be held, provided in the center of this holder and larger than the diameter of the wafer to be held. , and a wafer accommodating portion having the same depth as the wafer thickness from one main surface side thereof, and an integrated circuit portion of the wafer provided in the holder and when the held wafer is accommodated in the wafer accommodating portion. A wafer holder characterized by having an opening in which the wafer holder is enclosed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2102701A JPH042146A (en) | 1990-04-18 | 1990-04-18 | Wafer holder |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2102701A JPH042146A (en) | 1990-04-18 | 1990-04-18 | Wafer holder |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH042146A true JPH042146A (en) | 1992-01-07 |
Family
ID=14334566
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2102701A Pending JPH042146A (en) | 1990-04-18 | 1990-04-18 | Wafer holder |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH042146A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007294819A (en) * | 2006-04-27 | 2007-11-08 | Fujikura Ltd | Substrate holder |
JP2010067761A (en) * | 2008-09-10 | 2010-03-25 | Shin Etsu Polymer Co Ltd | Substrate-supporting jig |
JP2010205817A (en) * | 2009-03-02 | 2010-09-16 | Shin Etsu Polymer Co Ltd | Electronic component holder |
JP2010278198A (en) * | 2009-05-28 | 2010-12-09 | Lintec Corp | Wafer-processing sheet |
JP2011023546A (en) * | 2009-07-16 | 2011-02-03 | Shin Etsu Polymer Co Ltd | Electronic component holder and method for using the same |
-
1990
- 1990-04-18 JP JP2102701A patent/JPH042146A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007294819A (en) * | 2006-04-27 | 2007-11-08 | Fujikura Ltd | Substrate holder |
JP4699272B2 (en) * | 2006-04-27 | 2011-06-08 | 株式会社フジクラ | Board holder |
JP2010067761A (en) * | 2008-09-10 | 2010-03-25 | Shin Etsu Polymer Co Ltd | Substrate-supporting jig |
JP2010205817A (en) * | 2009-03-02 | 2010-09-16 | Shin Etsu Polymer Co Ltd | Electronic component holder |
JP2010278198A (en) * | 2009-05-28 | 2010-12-09 | Lintec Corp | Wafer-processing sheet |
JP2011023546A (en) * | 2009-07-16 | 2011-02-03 | Shin Etsu Polymer Co Ltd | Electronic component holder and method for using the same |
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