200921791 51 24724twf.doc/p 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種半導體裝置以及使用此裝置之 半導體製程’且特別是有關於一種清潔熱製程裝置内之透 光元件的方法、熱製程及熱製程裝置。 【先前技術】 ，隨著，半導體工業的發展趨勢往低成本與高元件密度 f、的製造技術為導向。快速熱製程（Rapid Thermal Processing，RTP)處理已逐漸取代傳統用高溫爐做的加熱 處理步驟，且其在未來積體電路製程的重要性已是無庸置 疑的。而且，這項技術不論在研究或商用的領域中，已應 用於許多半導體的製程上。 〜 般而言 伏迷熱製程(RTP)的設備主要包括有晶片 保持座（wafer holder)，用以承載晶片；一組加熱燈具 (lamp)，配置在晶片上方；以及石英視窗（轉& _撕）， 配置在加熱燈具與晶#之間，而加熱燈具所發出的光合透 過石英視窗傳遞至晶片上。石英視窗為透材質^功 ^為：將燈具的光均勻地照射至晶片上，使晶片上的製程 層具有咼可靠度以及均—性。 利用快速熱製程_>)的設備進行相關半 Ϊ此常ΪΓ靠近晶片的石英視窗表面產生 程的良率。而且，當附著物厚度變厚時1受= 的應力影響而導致附著物剝落(peeling)至晶片上，使製程 200921791 --------51 24724twf.doc/p 良率降低，嚴重時甚致會使產品報廢。 目岫，對石英視窗表面的附著物的處理方式，σ处曰 ==監測每次製程_著物增量，當附著物厚度 再t換一個新的石英視窗。這樣的作法是不僅影響機台利 用時間(up-time)，亦會大幅地增加維修成本， 品報廢之虞。 "有產 【發明内容】 〇 有鑑於此，本發明的目的就是在提供一種清潔熱製程 裝置之透光元件的方法、熱製程及熱製程裝置，能夠習知 的種種問題’提高燈源通過透光元件的均勻性，以及降低 製程成本、提高製程良率。 本發明提出一種清潔熱製程裝置之透光元件的方 法。前述透光元件是位於此裝置之反應腔室内，而反應腔 室内至少包括一晶片保持座，用以承載一晶片，且配置於 透光元件下方；以及一能量源輸出元件，配置於透光元件 ^ 上方。本發明之方法例如是，進行一表面處理步驟，清潔 J 透光元件的表面。 依照本發明的實施例所述之清潔熱製程裝置之透光 元件的方法，上述之表面處理步驟用以清除透光元件的表 面的附著物或者是使附著物澄清化。 依照本發明的實施例所述之清潔熱製程裝置之透光 元件的方法，上述之表面處理少驟可同時清潔晶片保持座。 依照本發明的實施例所述之清潔熱製程裝置之透光 元件的方法，上述之表面處理少驟為一通入處理氣體的步 200921791 _51 24724twf.doc/p 驟。其中，處理氣體的步驟的溫度為大於等於5〇(rc， 氧時間為大於等於5秒。若附著物為有機材料，則處理= 體例如是含有氧原子之氣體或混合氣體，其例如是氧氣^ 臭氧、氮氣、氤氣或其組合。若附著物為金屬材料或 材料’則處理氣體例如是齒素氣體或其組合，其例"蠢 氣、溴或其組合。 机、 Γ 依照本發明的實施例所述之清潔熱製㈣置 轉的方法’上述之表面處理步驟更 = :電::束、4素燈源、〜雷射、微波= 依照本發_實補所述之清潔㈣程裝置之 法，上述之能量源輸出元件例如 ^ ':電:=件紅外線光源、雷射、電子束'微波、= 元件Ζ、ί發明的實施例所述之清潔熱製程裝置之透光 ”，上述之熱製程I置為—快速熱製程裝置。 ^明另提出一種利用—熱製程褒置之製程。 内至少包括m件；一晶片保持座，用 出t==置於透光元件下方;以及-能量源： 先對晶片進行二上::本發明之熱製程例如是， 物,透光讀的表面，並_移除透光元件的表面的附著 依照本發明的實施例所述之利用—熱製程裝置之製 200921791 …. 51 24724twf.doc/p 程，上述之表面處理步驟為一通入處理氣體的步驟。其中， 處理氣體的步驟的溫度為大於等於500°C，通氣時間為大 於等於5秒。若附著物為有機材料，則處理氣體例如是含 有氧原子之氣體或混合氣體，其例如是氧氣、臭氧、氮氣、 氙氣或其組合。若附著物為金屬材料或無機材料，則處理 氣體例如是1¾素氣體或其組合，其例如是氟、氯、漠或其 组合。BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a semiconductor device and a semiconductor process using the same, and in particular to a light-transmitting component in a clean thermal process device Method, thermal process and thermal process unit. [Prior Art] With the development trend of the semiconductor industry, it is oriented toward low cost and high component density f. Rapid Thermal Processing (RTP) processing has gradually replaced the heat treatment steps of conventional high-temperature furnaces, and its importance in future integrated circuit processes is undoubted. Moreover, this technology has been applied to many semiconductor processes, whether in research or commercial applications. ~ Generally, the RTP equipment mainly includes a wafer holder for carrying the wafer; a set of heating lamps disposed above the wafer; and a quartz window (turn & _ Tear), disposed between the heating lamp and the crystal #, and the light emitted by the heating lamp is transmitted to the wafer through the quartz window. The quartz window is made of a transparent material. The light of the luminaire is uniformly irradiated onto the wafer, so that the process layer on the wafer has 咼 reliability and uniformity. The device using the rapid thermal process _> performs the correlation yield of the quartz window surface which is often close to the wafer. Moreover, when the thickness of the adherend becomes thick, 1 is affected by the stress of =, causing the deposit to peel off onto the wafer, so that the yield of the process 200921791 -------- 51 24724 twf.doc/p is lowered, when severe The product will be scrapped. See, the treatment of the attachment on the surface of the quartz window, σ 曰 == monitor each process _ load increment, when the thickness of the attachment is replaced by a new quartz window. This approach not only affects the up-time of the machine, but also significantly increases the cost of repairs. In view of the above, it is an object of the present invention to provide a method, a thermal process, and a thermal process apparatus for cleaning a light-transmitting component of a thermal process apparatus, which can solve various problems of 'increasing the light source through Uniformity of the light-transmitting component, as well as reduced process cost and improved process yield. The present invention provides a method of cleaning a light transmissive element of a thermal process apparatus. The light transmissive element is located in a reaction chamber of the device, and the reaction chamber includes at least one wafer holder for carrying a wafer and disposed under the light transmissive element; and an energy source output element disposed on the light transmissive element ^ Above. The method of the present invention is, for example, performing a surface treatment step of cleaning the surface of the J light transmitting member. According to a method of cleaning a light transmitting member of a thermal processing apparatus according to an embodiment of the present invention, the surface treating step is for removing an attachment of a surface of the light transmitting member or clarifying the adhering matter. In accordance with a method of cleaning a light transmissive component of a thermal processing apparatus in accordance with an embodiment of the present invention, the surface treatment described above may simultaneously clean the wafer holder. According to the method of cleaning the light-transmitting member of the thermal processing apparatus according to the embodiment of the present invention, the surface treatment described above is a step of introducing a processing gas to the step 200921791 _51 24724 twf.doc/p. Wherein, the temperature of the step of treating the gas is 5 大于 or more (rc, and the oxygen time is 5 seconds or more. If the deposit is an organic material, the treatment body is, for example, a gas containing a oxygen atom or a mixed gas, such as oxygen. ^ Ozone, nitrogen, helium or a combination thereof. If the deposit is a metal material or material 'the process gas is, for example, a dentate gas or a combination thereof, for example, "slow gas, bromine or a combination thereof." The method of cleaning the heat (four) rotation described in the embodiment is as follows: the surface treatment step described above is more: electricity:: bundle, 4 lamp source, ~ laser, microwave = cleaning according to the present invention (4) The method of the device, the above-mentioned energy source output device such as: 'Electrical: = infrared light source, laser, electron beam 'microwave, = component Ζ, ί, the light-transparent device of the invention described in the embodiment of the invention" The above-mentioned thermal process I is set as a rapid thermal process device. ^There is also proposed a process using the hot process process. The inner part includes at least m pieces; a wafer holder is placed under the light transmissive element with t== ; and - energy source: first on the wafer The thermal process of the present invention is, for example, a material, a light transmissive read surface, and the attachment of the surface of the light transmissive element is removed. According to the embodiment of the present invention, the use of the thermal process device is made in 200921791 .... 51 24724twf The above-mentioned surface treatment step is a step of introducing a processing gas, wherein the temperature of the step of treating the gas is 500 ° C or more, and the ventilation time is 5 seconds or more. If the deposit is an organic material, The processing gas is, for example, a gas containing a oxygen atom or a mixed gas, such as oxygen, ozone, nitrogen, helium or a combination thereof. If the deposit is a metal material or an inorganic material, the processing gas is, for example, a gas or a combination thereof. For example, fluorine, chlorine, desert or a combination thereof.
依照本發明的實施例所述之利用一熱製程裝置之製 程’上述之表面處理步驟更包括利用紫外線光源、電子束、 4素燈源、紅外線光源、雷射、微波、電波或電磁場。 依照本發明的實施例所述之利用一熱製程裝置之製 私’上述之能量源輸出元件例如是提供紫外線光源、鹵素 燈源、紅外線光源、雷射、電子束、微波、電波或電磁場 的元件。 依照本發明的實施例所述之利用一熱製程裝置之製 程，上述之製程步驟例如是金屬;g夕化物製程、退火製程、 ，積、低介電材料處理或紫外光固化製程。當上述之 製程步驟為金屬矽化物製程，則在製程步驟之後、表面處 理步驟之前，可將晶片移出反應腔室外。 依本發明的實施例所述之利用—熱製程裝置之製 程上述之熱製程裝置為一快速熱製程襄置。 本發明又提出-種熱製程裝置，其適用於一半導體製 輪出本^明之裝置包括透光①件、晶片保持座、—能量源 出兀件以及表面清潔元件。其巾，透光元件配置於此裝 51 24724twf.doc/p 200921791 置之反應腔室内。晶片保持座是用以承載一晶片，且其配 置於透光70件下方。能量源輸出元件具是配置於透光元件 上方另外表面π /系元件是配置於反應腔室内。表面清 潔元件是用以清潔透光元件的表面。 依照本發明的實施例所述之熱製程裝置，上述之表面 清潔元件配置於透光元件與晶絲持座之間，或晶片保持 座下方。 、主、依照本發明的實施例所述之熱製程裝置，上述之表面 2潔7L件Μ清除透光元件的表面_著物或者是使 物澄清化。 主依照本發明的實施例所述之熱製程裝置，上述之表面 清潔元件同時用以清潔晶片保持座。 ^ 依Α?、本發明的實施例所述之熱製程裝置，上述之表面 更包括提供紫外線光源、電子束、自素燈源^ 琛先源、雷射、微波、電波或電磁場的元件。 ϋ 、 依照本發明的實施例所述之熱製程裝置，上述之At旦 ^輪出元件例如是提供紫外線光源、鹵素燈源二外3 h、雷射、電子束、微波、電波或電磁場的元件。、 —依照本發明的實施例所述之熱製程裝置，上述之半導 ，製程例如是金屬矽化物製程、退火製程、沈 ;1電材料處理或紫外光固化製程。 Ό _ 。 依照本發明的實施例所述之熱製程裝置，上述之熱製 置為-快速熱製程裝置。 依照本發明的實施例所述之熱製程裝置，更包括一即 200921791 51 24724twf.doc/p 時監控裝置，其是配置於反應腔室内，以持續偵測透光元 件之透光度。另外，更包括一先進製程控制(APC)裝置， 用以自動回饋偵測結果至表面清潔元件。 本發明之裝置配置有表面清潔元件，其可用以清除熱 製程裝置内透光元件表面的附著物或使透光元件表面的附 著物澄清化。因此，可避免習知因裝置内部之透光元件表 面產生的附著物所造成的影響，而可提高製程良率。另外， 〇 本發明之方法與製程可有效清潔透光元件表面以及清除透 光元件表面之附著物，因此可提高製程良率，以及降低透 光元件的更換頻率，以有效降低製程成本。 *為讓本發明之上述和其他目的、特徵和優點能更明顯 易懂，下文特舉較佳實施例，並配合所附圖式，作詳細說 明如下。 【實施方式】The process of using a thermal processing apparatus according to an embodiment of the present invention includes the use of an ultraviolet light source, an electron beam, a 4-light source, an infrared source, a laser, a microwave, an electric wave, or an electromagnetic field. The above-described energy source output element is, for example, an element providing an ultraviolet light source, a halogen light source, an infrared light source, a laser, an electron beam, a microwave, an electric wave or an electromagnetic field, according to an embodiment of the present invention. . In the process of utilizing a thermal processing apparatus according to an embodiment of the present invention, the above-described process steps are, for example, a metal; an etchant process, an annealing process, a product, a low dielectric material process, or an ultraviolet light curing process. When the above-described process step is a metal telluride process, the wafer can be removed from the outside of the reaction chamber after the process step and before the surface treatment step. The thermal process apparatus described above in accordance with an embodiment of the present invention is a rapid thermal process apparatus. The present invention further provides a thermal processing apparatus suitable for use in a semiconductor manufacturing apparatus comprising a light transmitting member, a wafer holder, an energy source output member, and a surface cleaning member. The towel, the light transmissive element is disposed in the reaction chamber of the 51 24724 twf.doc/p 200921791. The wafer holder is used to carry a wafer and is disposed under the light transmission 70 pieces. The energy source output component is disposed above the light transmissive element and the other surface π / system component is disposed in the reaction chamber. The surface cleaning element is a surface for cleaning the light transmissive element. According to the thermal processing apparatus of the embodiment of the invention, the surface cleaning element is disposed between the light transmissive element and the crystal holder or below the wafer holder. According to the thermal processing apparatus of the embodiment of the present invention, the surface 2 is cleaned to remove the surface of the light-transmitting member or the object is clarified. In accordance with a thermal processing apparatus in accordance with an embodiment of the present invention, the surface cleaning elements described above are simultaneously used to clean the wafer holder. According to the thermal processing apparatus of the embodiment of the present invention, the surface further includes an element for providing an ultraviolet light source, an electron beam, a source of self-priming light, a laser, a microwave, an electric wave or an electromagnetic field. In the thermal processing apparatus according to the embodiment of the present invention, the above-mentioned At present is, for example, an element that provides an ultraviolet light source, a halogen light source, a laser beam, an electron beam, a microwave, an electric wave, or an electromagnetic field. . In the thermal processing apparatus according to the embodiment of the present invention, the semi-conductive process described above is, for example, a metal telluride process, an annealing process, a sinking, an electrical material processing or an ultraviolet curing process. Ό _ . According to the thermal processing apparatus of the embodiment of the present invention, the heat treatment described above is a rapid thermal processing apparatus. The thermal processing apparatus according to the embodiment of the present invention further includes a monitoring device of 200921791 51 24724 twf.doc/p, which is disposed in the reaction chamber to continuously detect the transmittance of the light transmitting member. In addition, an advanced process control (APC) device is included to automatically feed back the detection results to the surface cleaning components. The apparatus of the present invention is provided with a surface cleaning element that can be used to remove adhering matter from the surface of the light transmissive element in the thermal processing apparatus or to clarify the attachment of the surface of the light transmissive element. Therefore, it is possible to avoid the influence of the attachment caused by the surface of the light-transmitting element inside the device, and the process yield can be improved. In addition, the method and the process of the present invention can effectively clean the surface of the light-transmitting member and remove the adhesion of the surface of the light-transmitting member, thereby improving the process yield and reducing the frequency of replacement of the light-transmitting member, thereby effectively reducing the process cost. The above and other objects, features, and advantages of the present invention will become more apparent from the understanding of the appended claims appended claims [Embodiment]
Q 以下，將列舉實施例來進—步說明本發明，但這些實 施例並非用以限定本發明的範圍。 、 梦詈首照圖1 ’其纷示為本發明實施例的熱製程 ^理：Γιΐ裝置1GG可翻於—般半導體製程中的熱 Le Ϊ疋最適用於快速熱製程(R— Th_i 製程·Γ成Γ舉例來說，可適用於金屬砍化物㈣他) 衣H成乳切、氮化錢氮氧化 低介電材料的處理㈣ 形成 可以通用於户 外光固化製程。當然，還 二ί用於’在進行多項製程如離子植入及石夕酸鹽化 _lda㈣之後’使晶格簡並消除應力集巾，或是形成 200921791 ------ il 24724twf.doc/p 硼磷矽酸鹽玻璃(Borophospho-silicate Glass，BPSG)以及氮 化(nitridation)等的退火製程。 本實施例之熱製程裝置1〇〇包括透光元件102、晶片 保持座104、一能量源輸出元件1〇6以及透光元件之表面 清潔元件108。其中’透光元件1〇2配置於反應腔室11〇 内。透光元件102的材質例如是石英或是其他合適之透明 材料。晶片保持座104配置於反應腔室内11〇之透光元件 102下方，其用以承載晶片（例如，晶片1〇3)。能量源輸出 元件106配置於反應腔室内U〇之透光元件1〇2上方，能 置源輸出元件106所發出的能量源會通過透光元件1〇2而 均勻地傳遞到晶片103上。通常，能量源輸出元件1〇6可 例如是使用提供紫外線光源、鹵素燈源、紅外線光源、雷 射、電子束、微波、電波或電磁場的元件。 特別值得注意的是，本實施例之熱製程裝置1〇〇與傳 統熱製程裝置不社處在於：本實施例之熱製錄置1〇〇The following examples are intended to illustrate the invention, but are not intended to limit the scope of the invention. The first part of the invention is the thermal process of the embodiment of the invention: the Γιΐ device 1GG can be turned over in the general semiconductor process. The heat Le Ϊ疋 is most suitable for the rapid thermal process (R-Th_i process· For example, Γ成Γ can be applied to metal cleavage (4) he) HH into milk cut, nitrided nitrous oxide low dielectric material treatment (4) formation can be used in outdoor light curing process. Of course, it is also used to 'make the lattice degenerate stress-removing towel after performing multiple processes such as ion implantation and ion implantation _lda (four), or form 200921791 ------ il 24724twf.doc /p Annealing process of Borophospho-silicate Glass (BPSG) and nitridation. The thermal processing apparatus 1 of the present embodiment includes a light transmissive element 102, a wafer holder 104, an energy source output element 1〇6, and a surface cleaning element 108 of the light transmissive element. The light transmitting element 1〇2 is disposed in the reaction chamber 11A. The material of the light transmissive element 102 is, for example, quartz or other suitable transparent material. The wafer holder 104 is disposed under the light transmissive element 102 in the reaction chamber to carry a wafer (e.g., wafer 1〇3). The energy source output element 106 is disposed above the light transmissive element 1〇2 of the reaction chamber, and the energy source emitted from the source output element 106 is uniformly transmitted to the wafer 103 through the light transmissive element 1〇2. In general, the energy source output element 1〇6 can be, for example, an element that provides an ultraviolet light source, a halogen light source, an infrared light source, a laser, an electron beam, a microwave, an electric wave, or an electromagnetic field. It is particularly noteworthy that the thermal processing apparatus 1 of the present embodiment and the conventional thermal processing apparatus are not in the following: the thermal system of the present embodiment is 1 〇〇.
的反應腔室110 t還包括§&置絲面清紅件應。表面 清潔元件1〇8是配置於透光元件1〇2與晶片保持座刚之 間，其功用為清潔透光元件102的表面，以清除透光元件 102的表面的附著物’或者是使附著物澄清化。在其他實 施例中’表面清潔元件1〇8還可配置於晶片保持座⑽下 方(未緣不），以同步清潔此晶片保持座104。因此，不僅可 提南製程良率，還可降低透光元件的更 效降低製程成本。 ㈣]有 此處所。胃# Μ著物」是指，在進行熱製程的期間， 10 51 24724twf.doc/p 200921791 因製程因素而形成在透光元件102麵的多餘材料(如圖2 之標號101所示）。上述之附著物101可例如是有機材 ^屬材料或無機材料。當透光元件102表面產生附著物 牯，會使得能罝源輸出元件1〇6所發出的能量源無法均 地傳遞到晶片103上，而影響製程良率。另外，有關本實 施例之表面清潔S件⑽的構件與清潔透光元件的表面二 方法’將於下述做詳細說明。 虽然，在其他實施例令，本發明之熱製程裝置1〇〇 可包括有即時監控裝置(未纟會示），其例如是感測器。即時 監控裝置配置於反應腔室110 0，用以持續偵測透光元件 102之透光度，以便能依據透光元件1〇2表面的附著物形 成狀況而適度調整表面清潔元件1〇8的運作條件。另外， 本發明之熱製程裝置KK)亦可包括配置有先進製程控制 (APC)裝置，其用以自動回饋偵測結果至表面清元 108。 ’、 接下來，進一步於下述詳細說明本發明之方法與製 程。圖2為本發明實施例的熱製程的流程圖，此掣程/内令； 本發明的清潔熱製程裝置之透光元件的方法。< 請同時參照圖1與圖2，先對晶片103進行—半導體 製程(步驟210)。步驟210例如是對晶片1〇3進行金屬矽化 物製程、沈積製程、低介電材料處理、退火製程、紫外光 固化製程等快速熱製程處理。通常’在進行這樣的半導體 製程之後，靠近晶片103之透光元件102表面會產生一些 附著物101。上述之附著物101可例如是有機材料、金屬 11 200921791 24724twf.doc/p 材料或無機材料。攻些附著物1〇1會造成能量源輸出元件 106所發出的能量源無法均勻地傳遞到晶片廳上， 響製程良率。 ” 纟完成晶片的半導體製程之後，接著可進行—表面處 理步驟(步驟220)。此表面處理步驟可用以清 =喊面’以清除透光元件撤表面的附著物谢或二 疋，附者物101澄清化。在本實施例中，表面處理步驟例 〇 如疋通入處理氣體的步驟，藉由處理氣體與附著物101反 應’而進-步分解掉這些附著物1(M，使透光元件⑽的 透光度不會受到影響。隨後，附著物101經分解後，會通 過反應腔室内之抽氣裝置被抽出，而不會影響後續晶片的 製作。上述，通入處理氣體的步驟所使用之溫度為大於等 於500 c，其通氣的時間約為大於等於5秒。 承上述，若附著物1〇1為有機材料，則上述之處理氣 體可例如是使用含有氧原子的氣體或混合氣體，其例如是 氧氣、臭氧、氮氣、氙氣或其組合。若附著物1〇1為金屬 1/ 材料或無機材料，則上述之處理氣體可例如是使用幽素氣 體或其組合’其例如是氟、氯、溴或其組合。 在一實施例中，在藉由通入含有氧原子的氣體或混合 氣體以進行表面處理步驟之前，若晶片103上為金屬或其 他會與處理氣體反應之製程層，則可先將晶片103移除反 應腔室110外，以避免影響晶片103。例如，晶片1〇3進 行金屬矽化物製程之後，於進行表面處理步驟之前，先將 晶片103移除反應腔室110外。 12 200921791 51 24724twf.doc/p 特別要說明的是，熱製程裝置100之 7 ’亦即是上述之表面處理步驟所需應用到的二:: 1丰ί面清潔元件⑽射包括配置有提供科線光源 鹵素燈源、紅外線光源、雷射、電子束、微波、電波或The reaction chamber 110 t also includes § & The surface cleaning element 1〇8 is disposed between the light transmitting element 1〇2 and the wafer holder, and functions to clean the surface of the light transmitting element 102 to remove the adhesion of the surface of the light transmitting element 102 or to adhere Clarification. In other embodiments, the surface cleaning elements 1 〇 8 may also be disposed under the wafer holder (10) to simultaneously clean the wafer holder 104. Therefore, not only the yield of the south process can be mentioned, but also the process cost of the light-transmitting component can be reduced more effectively. (4)] There is here. "Stomach #Μ物" means that during the thermal process, 10 51 24724 twf.doc/p 200921791 excess material formed on the surface of the light transmissive element 102 due to process factors (as indicated by reference numeral 101 in Fig. 2). The attachment 101 described above may be, for example, an organic material or an inorganic material. When an adherent substance is generated on the surface of the light transmitting element 102, the energy source emitted from the power source output element 1〇6 is not uniformly transmitted to the wafer 103, which affects the process yield. Further, the method of the surface cleaning S member (10) of the present embodiment and the surface cleaning method of the light transmitting member will be described in detail below. Although, in other embodiments, the thermal process apparatus 1 of the present invention may include an instant monitoring device (not shown), which is, for example, a sensor. The real-time monitoring device is disposed in the reaction chamber 110 0 for continuously detecting the transmittance of the transparent component 102 so that the surface cleaning component 1 〇 8 can be appropriately adjusted according to the deposition condition of the surface of the transparent component 1 〇 2 Operating conditions. In addition, the thermal process apparatus KK) of the present invention may also include an advanced process control (APC) device for automatically feeding back the detection result to the surface clearer 108. Next, the method and process of the present invention will be further described in detail below. 2 is a flow chart of a thermal process of the embodiment of the present invention, the process of the light transmissive component of the present invention. < Referring also to Figs. 1 and 2, the wafer 103 is first subjected to a semiconductor process (step 210). Step 210 is, for example, performing a rapid thermal process such as a metal telluride process, a deposition process, a low dielectric material process, an annealing process, and an ultraviolet curing process on the wafer 1〇3. Typically, after the semiconductor process is performed, some deposits 101 are formed on the surface of the light transmissive element 102 near the wafer 103. The attachment 101 described above may be, for example, an organic material, a metal 11 200921791 24724 twf.doc/p material or an inorganic material. Attacking these attachments 1〇1 will cause the energy source emitted by the energy source output element 106 to be not uniformly transmitted to the wafer hall, and the process yield will be sounded. After the semiconductor process of the wafer is completed, a surface treatment step (step 220) may be performed. This surface treatment step may be used to clear the surface of the light-transmitting element to remove the adhesion of the light-transmitting element. In the present embodiment, the surface treatment step is, for example, a step of introducing a process gas into the process gas, and the process gas is reacted with the deposit 101 to further decompose the deposits 1 (M to light transmission). The transmittance of the component (10) is not affected. Subsequently, after the deposit 101 is decomposed, it is extracted through the air suction device in the reaction chamber without affecting the subsequent wafer fabrication. The temperature used is 500 c or more, and the aeration time is about 5 seconds or more. According to the above, if the deposit 1〇1 is an organic material, the processing gas may be, for example, a gas containing a oxygen atom or a mixed gas. , for example, oxygen, ozone, nitrogen, helium or a combination thereof. If the deposit 1〇1 is a metal 1 material or an inorganic material, the processing gas may be, for example, a spectrin gas or For example, it is fluorine, chlorine, bromine or a combination thereof. In one embodiment, before the surface treatment step is carried out by introducing a gas or a mixed gas containing oxygen atoms, if the wafer 103 is made of metal or the like Processing the process layer of the gas reaction, the wafer 103 can be removed from the reaction chamber 110 first to avoid affecting the wafer 103. For example, after the wafer 1〇3 is subjected to the metal telluride process, the wafer is processed before the surface treatment step. 103 is removed from the reaction chamber 110. 12 200921791 51 24724twf.doc/p In particular, the 7' of the thermal processing apparatus 100 is the second application required for the surface treatment steps described above: 1 The cleaning element (10) includes a halogen source provided with a line source, an infrared source, a laser, an electron beam, a microwave, an electric wave, or
。舉例來說’藉由提供紫外線光源之元件所J. For example, by providing an element of an ultraviolet light source
==可幫助分解附著物101，且幫助提供處理 轧體達到所需的溫度；而提供雷 咬I 束，同樣有助於分解附著物=子束之70件可發出電子 製程實施，,，本發明之方法亦不需於晶片進行熱 ίίϋϊΓ 言，本發明之清潔熱製程裝置之透 Α⑽的方村配合母日_機步辦同時進行，如此有 =機=科間。或者是，在—特定時 透先兀件的清潔處理，Μ㈣峰 ^ mamtenance，ρΜ)來提高製程良率。 呢 u ♦面明可有效清潔熱製程|置之透光元件 表面或使透先兀件表Φ的附著物澄清化，因此 件表面產生的附著物所造成的影i : =換頻率’以有效降低製程成本。另 曰測機時進行’因此可提高機台利用時間。 if定本交佳實施例揭露如上，然其並非用以 和處，當可作些許之更動與潤飾， = 範圍當視後附之申請專利範圍所界定者為準/蒦 13 51 24724twf.doc/p 200921791 【圖式簡單說明】 圖1繪示為本發明實施例的熱製程裝置。 圖2為本發明實施例的熱製程的流程圖，此製程内含 本發明的清潔熱製程裝置之透光元件的方法。 【主要元件符號說明】 100 :熱製程裝置 101 :附著物 102 :透光元件 103 :晶片 104 :晶片保持座 106 :能量源元件 108 :表面清潔元件 110 :反應腔室 210、220 :步驟 14== can help to decompose the attachment 101, and help provide the processing of the rolling body to reach the required temperature; while providing the lightning bit I beam, also help to decompose the attachment = 70 pieces of the beam can be issued electronic process implementation,,, The method of the invention does not need to perform heat on the wafer. The method of the cleaning and hot process device of the present invention (10) is carried out simultaneously with the mother-day machine, so that there is a machine=section. Or, at the specific time, through the cleaning process of the first part, Μ(4) peak ^ mamtenance, ρΜ) to improve the process yield. u ♦ Surface can effectively clean the hot process|Set the surface of the light-transmitting component or clarify the adhesion of the Φ component of the through-mesh table, so the shadow caused by the deposit on the surface of the component i : = change frequency 'effectively Reduce process costs. When the machine is being tested, it can be used to increase the machine utilization time. If the example is disclosed above, it is not used in the same place. When some changes and refinements can be made, the scope is as defined in the scope of the patent application. 蒦13 51 24724twf.doc/p 200921791 [Simple Description of the Drawings] FIG. 1 illustrates a thermal processing apparatus according to an embodiment of the present invention. 2 is a flow chart of a thermal process in accordance with an embodiment of the present invention, the process including the method of cleaning a light transmissive component of the thermal processing apparatus of the present invention. [Main component symbol description] 100: Thermal process device 101: Attachment 102: Light transmitting member 103: Wafer 104: Wafer holder 106: Energy source member 108: Surface cleaning member 110: Reaction chamber 210, 220: Step 14