CN101436525A - Thermal technique device, method for cleaning translucent element thereof and technique for utilizing the device - Google Patents
Thermal technique device, method for cleaning translucent element thereof and technique for utilizing the device Download PDFInfo
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- CN101436525A CN101436525A CNA2007101860611A CN200710186061A CN101436525A CN 101436525 A CN101436525 A CN 101436525A CN A2007101860611 A CNA2007101860611 A CN A2007101860611A CN 200710186061 A CN200710186061 A CN 200710186061A CN 101436525 A CN101436525 A CN 101436525A
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Abstract
The invention discloses a thermal process device, a method for cleaning a light transmission element thereof, and a process using the device. The light transmission element is positioned in a reaction chamber of the device, while the reaction chamber at least comprises a wafer holding seat which is used for bearing a wafer and is arranged below the light transmission element, and also comprises an energy source output element arranged above the light transmission element. The method comprises a surface treating step for cleaning the surface of the light transmission element.
Description
Technical field
The semiconductor technology that the present invention relates to a kind of semiconductor device and use this device, and be particularly related to a kind of method, thermal process and thermal technique device that cleans the translucent element in the thermal technique device.
Background technology
Along with, the development trend of semi-conductor industry is guiding toward the manufacturing technology of low cost and high component density.(Rapid Thermal Processing RTP) handle the heat treatment step that replacement tradition is gradually made of high temperature furnace, and its importance in following integrated circuit technology has been unquestionable to rapid hot technics.And, no matter this technology has been applied on many semi-conductive technologies in the field of research or commercialization.
Generally speaking, the equipment of rapid hot technics (RTP) mainly includes wafer and keeps seat (waferholder), in order to bearing wafer; One group of heating light fixture (lamp) is configured in the wafer top; And quartzy form (quartz window), be configured between heating light fixture and the wafer, and the heating light that light fixture sent can be passed on the wafer through quartzy form.Quartzy form is a material transparent, and its function is: the light of light fixture is exposed on the wafer equably, make the process layer on the wafer have high-reliability and homogeneity.
When utilizing the semiconductor technology that the equipment of rapid hot technics (RTP) is correlated with, regular meeting makes the quartzy form surface near wafer produce some attachments.Uniformity when these attachments can cause light to penetrate quartzy form is not good, and then influences the rate of finished products of technology.And, when attachment thickness thickening, be subject to quartzy stress influence and cause attachment to peel off (peeling) to wafer, process yield is reduced, very cause when serious and can make product rejection.
At present, to the processing mode of the attachment on quartzy form surface, can only be the attachment increment of negatively monitoring each technology, when attachment thickness is higher, replace a new quartzy form again.Such practice is not only to influence board to utilize the time (up-time), also can increase maintenance cost significantly, and also have the anxiety of product rejection.
Summary of the invention
In view of this, purpose of the present invention is exactly that a kind of method, thermal process and thermal technique device that cleans the translucent element of thermal technique device is being provided, variety of problems that can be known improves the uniformity of lamp source by translucent element, and reduces technology cost, raising process yield.
The present invention proposes a kind of method that cleans the translucent element of thermal technique device.Aforementioned translucent element is the reaction chamber that is positioned at this device, and comprises at least in the reaction chamber that wafer keeps seat, in order to bearing wafer, and is disposed at the translucent element below; And the energy source output element, be disposed at the translucent element top.Method of the present invention for example is to carry out surface treatment step, the surface of cleaning translucent element.
According to the method for the translucent element of the described cleaning thermal technique device of embodiments of the invention, above-mentioned surface treatment step is in order to the attachment on the surface of removing translucent element or make the attachment clarificationization.
According to the method for the translucent element of the described cleaning thermal technique device of embodiments of the invention, above-mentioned surface treatment step clean wafer simultaneously keeps seat.
According to the method for the translucent element of the described cleaning thermal technique device of embodiments of the invention, above-mentioned surface treatment step is for feeding the step of handling gas.Wherein, the temperature of handling the step of gas is more than or equal to 500 ℃, and duration of ventilation is more than or equal to 5 seconds.If attachment is an organic material, then handling gas for example is gas or the mist that contains oxygen atom, and it for example is oxygen, ozone, nitrogen, xenon or its combination.If attachment is metal material or inorganic material, then handling gas for example is halogen gas or its combination, and it for example is fluorine, chlorine, bromine or its combination.
According to the method for the translucent element of the described cleaning thermal technique device of embodiments of the invention, above-mentioned surface treatment step also comprises utilizes ultraviolet light source, electron beam, Halogen lamp LED source, infrared light sources, laser, microwave, electric wave or electromagnetic field.
According to the method for the translucent element of the described cleaning thermal technique device of embodiments of the invention, above-mentioned energy source output element for example provides the element of ultraviolet light source, Halogen lamp LED source, infrared light sources, laser, electron beam, microwave, electric wave or electromagnetic field.
According to the method for the translucent element of the described cleaning thermal technique device of embodiments of the invention, above-mentioned thermal technique device is the rapid hot technics device.
The present invention proposes a kind of technology of utilizing thermal technique device in addition.At least comprise translucent element in the reaction chamber of aforementioned means; Wafer keeps seat, in order to bearing wafer, and is disposed at the translucent element below; And the energy source output element, be disposed at the translucent element top.Thermal process of the present invention for example is that elder generation carries out processing step to wafer, and then carries out surface treatment step, cleans the surface of translucent element, and removes the attachment on the surface of translucent element simultaneously.
According to the described technology of utilizing thermal technique device of embodiments of the invention, above-mentioned surface treatment step is for feeding the step of handling gas.Wherein, the temperature of handling the step of gas is more than or equal to 500 ℃, and duration of ventilation is more than or equal to 5 seconds.If attachment is an organic material, then handling gas for example is gas or the mist that contains oxygen atom, and it for example is oxygen, ozone, nitrogen, xenon or its combination.If attachment is metal material or inorganic material, then handling gas for example is halogen gas or its combination, and it for example is fluorine, chlorine, bromine or its combination.
According to the described technology of utilizing thermal technique device of embodiments of the invention, above-mentioned surface treatment step also comprises utilizes ultraviolet light source, electron beam, Halogen lamp LED source, infrared light sources, laser, microwave, electric wave or electromagnetic field.
According to the described technology of utilizing thermal technique device of embodiments of the invention, above-mentioned energy source output element for example provides the element of ultraviolet light source, Halogen lamp LED source, infrared light sources, laser, electron beam, microwave, electric wave or electromagnetic field.
According to the described technology of utilizing thermal technique device of embodiments of the invention, above-mentioned processing step for example is metal silicide technology, annealing process, depositing operation, dielectric materials processing or ultraviolet light polymerization technology.When above-mentioned processing step is a metal silicide technology, then after processing step, before the surface treatment step, wafer can be shifted out outside the reaction chamber.
According to the described technology of utilizing thermal technique device of embodiments of the invention, above-mentioned thermal technique device is the rapid hot technics device.
The present invention proposes a kind of thermal technique device again, and it is applicable to semiconductor technology.The inventive system comprises translucent element, wafer maintenance seat, energy source output element and cleaning surfaces element.Wherein, translucent element is disposed in the reaction chamber of this device.It is in order to bearing wafer that wafer keeps seat, and it is disposed at the translucent element below.Energy source output element tool is to be disposed at the translucent element top.In addition, the cleaning surfaces element is to be disposed in the reaction chamber.The cleaning surfaces element is the surface in order to the cleaning translucent element.
According to the described thermal technique device of embodiments of the invention, above-mentioned cleaning surfaces arrangements of components keeps between the seat in translucent element and wafer, or wafer keeps the seat below.
According to the described thermal technique device of embodiments of the invention, above-mentioned cleaning surfaces element is in order to the attachment on the surface of removing translucent element or make the attachment clarificationization.
According to the described thermal technique device of embodiments of the invention, above-mentioned cleaning surfaces element keeps seat in order to clean wafer simultaneously.
According to the described thermal technique device of embodiments of the invention, above-mentioned cleaning surfaces element also comprises the element that ultraviolet light source, electron beam, Halogen lamp LED source, infrared light sources, laser, microwave, electric wave or electromagnetic field are provided.
According to the described thermal technique device of embodiments of the invention, above-mentioned energy source output element for example provides the element of ultraviolet light source, Halogen lamp LED source, infrared light sources, laser, electron beam, microwave, electric wave or electromagnetic field.
According to the described thermal technique device of embodiments of the invention, above-mentioned semiconductor technology for example is metal silicide technology, annealing process, depositing operation, dielectric materials processing or ultraviolet light polymerization technology.
According to the described thermal technique device of embodiments of the invention, above-mentioned thermal technique device is the rapid hot technics device.
According to the described thermal technique device of embodiments of the invention, also comprise the immediately monitoring device, it is to be disposed in the reaction chamber, to continue the light transmittance of detecting translucent element.In addition, also comprise advanced technologies control (APC) device, detect the result to the cleaning surfaces element in order to automatic feedback.
Device of the present invention disposes the cleaning surfaces element, and it can be in order to the attachment of removing thermal technique device iuuminting element surface or the attachment clarificationization that makes the translucent element surface.Therefore, can avoid known, and can improve process yield because of the surperficial influence that attachment caused that produces of the translucent element that installs inside.In addition, therefore the attachment that method of the present invention and technology can effectively clean the translucent element surface and remove the translucent element surface can improve process yield, and the replacing frequency that reduces translucent element, with effective reduction technology cost.
For above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Fig. 1 illustrates the thermal technique device into the embodiment of the invention.
Fig. 2 is the flow chart of the thermal process of the embodiment of the invention, and this technology includes the method for the translucent element of cleaning thermal technique device of the present invention.
Description of reference numerals
100: thermal technique device 101: attachment
102: translucent element 103: wafer
104: wafer keeps seat 106: the energy source element
108: cleaning surfaces element 110: reaction chamber
210,220: step
Embodiment
Below, will enumerate embodiment and further specify the present invention, but these embodiment are not in order to limit scope of the present invention.
At first, please refer to Fig. 1, it illustrates the thermal technique device into the embodiment of the invention.This thermal technique device 100 is applicable to the heat treatment in the general semiconductor technology, especially be best suited for rapid hot technics (Rapid Thermal Processing, RTP).For instance, applicable to metal silicide (salicide) technology; Form the depositing operation of silica, silicon nitride and silicon oxynitride; Form the treatment process of dielectric materials; And ultraviolet light polymerization technology.Certainly, can also be applicable to, carrying out injection of multinomial technology such as ion and silicic acid salinization (silicidation) afterwards, make the lattice rearrangement and eliminate stress concentrated, or form boron phosphorus silicate glass (Borophospho-silicate Glass, BPSG) and the annealing process of nitrogenize (nitridation) etc.
The thermal technique device 100 of present embodiment comprises that translucent element 102, wafer keep the cleaning surfaces element 108 of seat 104, energy source output element 106 and translucent element.Wherein, translucent element 102 is disposed in the reaction chamber 110.The material of translucent element 102 for example is quartzy or other suitable transparent materials.Wafer keeps seat 104 to be disposed at translucent element 102 belows of reaction chamber interior 110, and it is in order to bearing wafer (for example, wafer 103).Energy source output element 106 is disposed at translucent element 102 tops of reaction chamber interior 110, and the energy source that energy source output element 106 sent can be delivered on the wafer 103 equably by translucent element 102.Usually, energy source output element 106 can for example be to use the element that ultraviolet light source, Halogen lamp LED source, infrared light sources, laser, electron beam, microwave, electric wave or electromagnetic field are provided.
So-called herein " attachment " be meant, carry out thermal process during, be formed on the excess stock (shown in the label 101 of Fig. 2) on translucent element 102 surfaces because of technological factor.Above-mentioned attachment 101 can for example be organic material, metal material or inorganic material.When translucent element 102 surfaces produced attachment 101, the energy source that can make energy source output element 106 be sent can't be delivered on the wafer 103 equably, and influences process yield.In addition, the method about the surface of the member of the cleaning surfaces element 108 of present embodiment and cleaning translucent element will elaborate in following.
Certainly, in other embodiments, thermal technique device 100 of the present invention can include immediately monitoring device (not illustrating), and it for example is a sensor.The immediately monitoring device is disposed in the reaction chamber 110, and in order to continue the light transmittance of detecting translucent element 102, appropriateness is adjusted the operation condition of surperficial cleaning element 108 so that can form situation according to the attachment on translucent element 102 surfaces.In addition, thermal technique device 100 of the present invention also can comprise that disposing advanced technologies control (APC) installs, and it detects the result to cleaning surfaces element 108 in order to automatic feedback.
Next, further in following detailed description method of the present invention and technology.Fig. 2 is the flow chart of the thermal process of the embodiment of the invention, and this technology includes the method for the translucent element of cleaning thermal technique device of the present invention.
Please carry out semiconductor technology (step 210) to wafer 103 earlier simultaneously with reference to Fig. 1 and Fig. 2.Step 210 for example is wafer 103 to be carried out rapid hot technics such as metal silicide technology, depositing operation, dielectric materials processing, annealing process, ultraviolet light polymerization technology to handle.Usually, after carrying out such semiconductor technology, can some attachments 101 of generation near translucent element 102 surfaces of wafer 103.Above-mentioned attachment 101 can for example be organic material, metal material or inorganic material.The energy source that these attachments 101 can cause energy source output element 106 to be sent can't be delivered on the wafer 103 equably, and influences process yield.
After finishing the semiconductor technology of wafer, then can carry out surface treatment step (step 220).This surface treatment step can be in order to the surface of cleaning translucent element 102, with the attachment 101 of removing translucent element 102 surfaces or make attachment 101 clarificationizations.In the present embodiment, surface treatment step for example is to feed the step of handling gas, by handling gas and attachment 101 reactions, takes off these attachments 101 and further divide, and the light transmittance of translucent element 102 can be affected.Subsequently, attachment 101 can be drawn out of by the air extractor in the reaction chamber after decomposing, and can not influence the making of subsequent wafer.Above-mentioned, feeding the employed temperature of step of handling gas is more than or equal to 500 ℃, and the time of its ventilation was about more than or equal to 5 seconds.
Hold above-mentionedly, if attachment 101 is organic material, then above-mentioned processing gas can for example be to use gas or the mist that contains oxygen atom, and it for example is oxygen, ozone, nitrogen, xenon or its combination.If attachment 101 is metal material or inorganic material, then above-mentioned processing gas can for example be to use halogen gas or its combination, and it for example is fluorine, chlorine, bromine or its combination.
In one embodiment, at the gas that contains oxygen atom by feeding or mist with before carrying out surface treatment step, if be metal or other meetings and the process layer of handling gas reaction on the wafer 103, then can earlier wafer 103 be removed outside the reaction chamber 110, to avoid influencing wafer 103.For example, wafer 103 carries out after the metal silicide technology, before carrying out surface treatment step, earlier wafer 103 is removed outside the reaction chamber 110.
Be noted that the cleaning surfaces element 108 of thermal technique device 100 especially, that is be the above-mentioned required member that is applied to of surface treatment step.In addition, cleaning surfaces element 108 also can comprise and disposes the element that ultraviolet light source, Halogen lamp LED source, infrared light sources, laser, electron beam, microwave, electric wave or electromagnetic field are provided.For instance, can help to decompose attachment 101, and help to provide processing gas to reach required temperature by the ultraviolet light source that element sent that ultraviolet light source is provided; And the element that electron beam is provided can send electron beam, helps to decompose attachment 101 equally.
In other embodiments, method of the present invention does not also need to carry out after wafer carries out thermal process.Specifically, carry out simultaneously when the method for the translucent element of cleaning thermal technique device of the present invention can cooperate the survey machine step of every day, so help board to utilize the time.Or, in special time, promptly carry out the clean of a translucent element, (preventive maintenance PM) improves process yield to utilize preventive maintenance.
In sum, the present invention can effectively clean the translucent element surface of thermal technique device or make the attachment clarificationization on translucent element surface, therefore can avoid known, and then can improve process yield because of the surperficial influence that attachment caused that produces of the translucent element that installs inside.And the present invention also helps to reduce the replacing frequency of translucent element, with effective reduction technology cost.On the other hand, method of the present invention can cooperate when surveying machine every day carries out, and therefore can improve board utilizes the time.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; those skilled in the art without departing from the spirit and scope of the present invention, when can doing a little change and retouching, so protection scope of the present invention is when looking being as the criterion that accompanying Claim defines.
Claims (32)
1. method that cleans the translucent element of thermal technique device, this translucent element is the reaction chamber that is positioned at this device, and comprises at least in this reaction chamber that wafer keeps seat, in order to bearing wafer, and is disposed at this translucent element below; And the energy source output element, being disposed at this translucent element top, this method comprises:
Carry out surface treatment step, clean the surface of this translucent element.
2. the method for the translucent element of cleaning thermal technique device as claimed in claim 1, wherein this surface treatment step is in order to the attachment on the surface of removing this translucent element or make this attachment clarificationization.
3. the method for the translucent element of cleaning thermal technique device as claimed in claim 1, wherein this surface treatment step can clean this wafer maintenance seat simultaneously.
4. the method for the translucent element of cleaning thermal technique device as claimed in claim 1, wherein this surface treatment step is for feeding the step of handling gas.
5. the method for the translucent element of cleaning thermal technique device as claimed in claim 4, the temperature that wherein should handle the step of gas is more than or equal to 500 ℃.
6. the method for the translucent element of cleaning thermal technique device as claimed in claim 4, the time that wherein should feed the step of handling gas is more than or equal to 5 seconds.
7. the method for the translucent element of cleaning thermal technique device as claimed in claim 4, wherein attachment is an organic material, then this processing gas comprises oxygen, ozone, nitrogen, xenon or its combination.
8. the method for the translucent element of cleaning thermal technique device as claimed in claim 4, wherein attachment is metal material or inorganic material, then this processing gas comprises halogen gas or its combination.
9. the method for the translucent element of cleaning thermal technique device as claimed in claim 1, wherein this surface treatment step also comprises and utilizes ultraviolet light source, electron beam, Halogen lamp LED source, infrared light sources, laser, microwave, electric wave or electromagnetic field.
10. the method for the translucent element of cleaning thermal technique device as claimed in claim 1, wherein this energy source output element comprises the element that ultraviolet light source, Halogen lamp LED source, infrared light sources, laser, electron beam, microwave, electric wave or electromagnetic field are provided.
11. the method for the translucent element of cleaning thermal technique device as claimed in claim 1, wherein this thermal technique device is the rapid hot technics device.
12. a technology of utilizing thermal technique device comprises translucent element at least in the reaction chamber of this thermal technique device; Wafer keeps seat, in order to bearing wafer, and is disposed at this translucent element below; And the energy source output element, being disposed at this translucent element top, this technology comprises:
Earlier this wafer is carried out processing step; And
Carry out surface treatment step again, clean the surface of this translucent element, and remove the attachment on the surface of this translucent element simultaneously.
13. the technology of utilizing thermal technique device as claimed in claim 12, wherein this surface treatment step is for feeding the step of handling gas.
14. the technology of utilizing thermal technique device as claimed in claim 13, the temperature that wherein should handle the step of gas is more than or equal to 500 ℃.
15. the technology of utilizing thermal technique device as claimed in claim 13, the time that wherein should feed the step of handling gas is more than or equal to 5 seconds.
16. the technology of utilizing thermal technique device as claimed in claim 13, wherein attachment is an organic material, and then this processing gas comprises oxygen, ozone, nitrogen, xenon or its combination.
17. the technology of utilizing thermal technique device as claimed in claim 13, wherein attachment is metal material or inorganic material, and then this processing gas comprises halogen gas or its combination.
18. the technology of utilizing thermal technique device as claimed in claim 12, wherein this surface treatment step also comprises and utilizes ultraviolet light source, electron beam, Halogen lamp LED source, infrared light sources, laser, microwave, electric wave or electromagnetic field.
19. the technology of utilizing thermal technique device as claimed in claim 12, wherein this energy source output element comprises the element that ultraviolet light source, Halogen lamp LED source, infrared light sources, laser, electron beam, microwave, electric wave or electromagnetic field are provided.
20. the technology of utilizing thermal technique device as claimed in claim 12, wherein this processing step comprises metal silicide technology, annealing process, depositing operation, dielectric materials processing or ultraviolet light polymerization technology.
21. the technology of utilizing thermal technique device as claimed in claim 20, wherein when this processing step be metal silicide technology, then after this processing step, before this surface treatment step, this wafer is shifted out outside this reaction chamber.
22. the technology of utilizing thermal technique device as claimed in claim 12, wherein this thermal technique device is the rapid hot technics device.
23. a thermal technique device is applicable to semiconductor technology, this device comprises:
Translucent element is disposed in the reaction chamber of this device;
Wafer keeps seat, in order to bearing wafer, and is disposed at this translucent element below;
The energy source output element is disposed at this translucent element top; And
The cleaning surfaces element is disposed in this reaction chamber, in order to clean the surface of this translucent element.
24. thermal technique device as claimed in claim 23, wherein this cleaning surfaces arrangements of components keeps between the seat in this translucent element and this wafer, or this wafer keeps the seat below.
25. thermal technique device as claimed in claim 23, wherein this cleaning surfaces element is in order to the attachment on the surface of removing this translucent element or make this attachment clarificationization.
26. thermal technique device as claimed in claim 23, wherein this cleaning surfaces element keeps seat in order to clean this wafer simultaneously.
27. thermal technique device as claimed in claim 23, wherein this cleaning surfaces element also comprises the element that ultraviolet light source, electron beam, Halogen lamp LED source, infrared light sources, laser, microwave, electric wave or electromagnetic field are provided.
28. thermal technique device as claimed in claim 23, wherein this energy source output element comprises the element that ultraviolet light source, Halogen lamp LED source, infrared light sources, laser, electron beam, microwave, electric wave or electromagnetic field are provided.
29. thermal technique device as claimed in claim 23, wherein this semiconductor technology comprises metal silicide technology, annealing process, depositing operation, dielectric materials processing or ultraviolet light polymerization technology.
30. thermal technique device as claimed in claim 23, wherein this thermal technique device is the rapid hot technics device.
31. thermal technique device as claimed in claim 23 also comprises the immediately monitoring device, is disposed in this reaction chamber, to continue the light transmittance of this translucent element of detecting.
32. thermal technique device as claimed in claim 31 also comprises the advanced technologies control device, detects the result to the cleaning surfaces element in order to automatic feedback.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101860611A CN101436525A (en) | 2007-11-13 | 2007-11-13 | Thermal technique device, method for cleaning translucent element thereof and technique for utilizing the device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101860611A CN101436525A (en) | 2007-11-13 | 2007-11-13 | Thermal technique device, method for cleaning translucent element thereof and technique for utilizing the device |
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| Publication Number | Publication Date |
|---|---|
| CN101436525A true CN101436525A (en) | 2009-05-20 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007101860611A Pending CN101436525A (en) | 2007-11-13 | 2007-11-13 | Thermal technique device, method for cleaning translucent element thereof and technique for utilizing the device |
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| Country | Link |
|---|---|
| CN (1) | CN101436525A (en) |
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2007
- 2007-11-13 CN CNA2007101860611A patent/CN101436525A/en active Pending
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Open date: 20090520 |