TW202017097A - 基板處理系統 - Google Patents

基板處理系統 Download PDF

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TW202017097A
TW202017097A TW107137224A TW107137224A TW202017097A TW 202017097 A TW202017097 A TW 202017097A TW 107137224 A TW107137224 A TW 107137224A TW 107137224 A TW107137224 A TW 107137224A TW 202017097 A TW202017097 A TW 202017097A
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substrate
tank
processing system
support
substrate holding
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TW107137224A
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TWI685058B (zh
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馮傳彰
劉茂林
吳庭宇
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辛耘企業股份有限公司
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Priority to TW107137224A priority Critical patent/TWI685058B/zh
Priority to CN201811326178.XA priority patent/CN111081591B/zh
Priority to KR1020180148967A priority patent/KR102175327B1/ko
Priority to US16/204,511 priority patent/US11101157B2/en
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Publication of TWI685058B publication Critical patent/TWI685058B/zh
Publication of TW202017097A publication Critical patent/TW202017097A/zh

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    • H—ELECTRICITY
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    • B—PERFORMING OPERATIONS; TRANSPORTING
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Abstract

一種基板處理系統包括一基板處理組和一基板持取單元。基板處理組包括基板支撐件，基板支撐件用以支撐直立的一基板。基板持取單元包括二懸臂和二基板持取件。各基板持取件分別設置於各懸臂。二基板持取件用以垂直持取基板。當基板持取單元移動至基板處理組，且二基板持取件與基板接觸後，二基板持取件持取基板。

Description

基板處理系統
本發明係關於一種基板處理系統，特別是一種方便持取、放置或交接直立狀態的基板，以及將基板轉換為平放或直立狀態之間，以配合進行各種製程的基板處理系統。
在半導體製程中，需先對基板進行多道清潔程序，以移除基板表面的雜質；或者蝕刻基板形成圖案後，也必須藉由多道清潔程序以去除基板表面的光阻或金屬膜。在一般的清潔程序裡，係先將基板浸泡於化學液，再以噴洗的方式清洗基板，最後再以旋轉的方式乾燥基板。然而，將基板置入浸泡、噴洗或旋轉的機台時，須配合不同的機台設計而將基板直立或平放。
因此，如何提供一種方便將基板持取、放置或交接直立狀態的基板，以及將基板轉換為平放或直立狀態之間，以配合進行各種製程的基板處理系統，遂成為一值得研討的課題。
本發明之主要目的係在提供一種方便持取、放置或交接直立狀態的基板，以及將基板轉換為平放或直立狀態之間，以配合進行各種製程的基板處理系統。
為達成上述之目的，本發明之一種基板處理系統包括一基板處理組和一基板持取單元。基板處理組包括基板支撐件，基板支撐件用以支撐直立的一基板。基板持取單元包括二懸臂和二基板持取件，各基板持取件分別設置於各懸臂，二基板持取件用以垂直持取基板。當基板持取單元移動至基板處理組，且二基板持取件與基板接觸後，二基板持取件持取基板。基板持取單元持取基板之步驟包括：二基板持取件下降至低於第一高度；二基板持取件向基板水平移動至二基板持取件分別對準基板之兩邊；二基板持取件上升至接觸基板之兩邊；二基板持取件上升並持取基板，使得基板離開基板支撐件。
為能讓 貴審查委員能更瞭解本發明之技術內容，特舉較佳具體實施例說明如下。
以下請一併參考圖1至圖10關於本發明之第一實施例之基板處理系統。圖1係本發明之第一實施例之基板處理系統之示意圖；圖2係本發明之第一實施例之基板支撐件翻轉於水平與直立狀態之間之示意圖；圖3係本發明之第一實施例之基板持取單元靠近基板支撐件之示意圖；圖4係本發明之第一實施例之基板持取件之示意圖；圖5係本發明之第一實施例之基板持取件下降至低於第一高度之示意圖；圖6係本發明之第一實施例之基板持取件上升至接觸基板之兩邊之示意圖；圖7係本發明之第一實施例之基板持取件持取基板並上升，使得基板離開基板支撐件之示意圖；圖8係本發明之第一實施例之基板位於浸泡槽內的基板支撐件上之示意圖；圖9係本發明之第一實施例之基板持取件浸泡槽內的基板支撐件上的基板之示意圖；圖10係本發明之第一實施例之基板持取件單片式噴洗處理槽內的基板支撐件上的基板之示意圖。
如圖1所示，在第一實施例中，基板處理系統1可持取、放置或交接直立狀態的基板W，以及將基板W轉換為平放或直立狀態之間，以配合進行各種製程。基板處理系統1包括一基板處理組100、一基板持取單元200、控制單元400、一清洗乾燥槽500、一第一基板翻轉機600、一第二基板翻轉機700、一基板輸出入單元800和一滑軌組900。
如圖1至圖3所示，基板處理組100包括複數基板支撐件10、10a、10b、10c、10d、一浸泡槽20以及一單片式噴洗處理槽30。基板支撐件10、10a、10b、10c、10d用以支撐直立的基板W，其中二個基板支撐件10、10c分別樞接第一基板翻轉機600和第二基板翻轉機700上，第一基板翻轉機600和第二基板翻轉機700可以旋轉以使二個基板支撐件10、10c直立或平放。二個基板支撐件10、10c皆包括四個容置單元11和一個主體12。四個容置單元11皆為圓弧狀的容置槽，並可移動地連接主體12，然而容置單元11之數量和形狀不以上述為限，其可依照設計需求而改變，例如改變為一個半圓形的容置槽。四個容置單元11可以相對主體12張開或收縮以托住基板W；基板支撐件10、10c也可以分別相對第一基板翻轉機600和第二基板翻轉機700沿著旋轉方向X旋轉，而使基板支撐件10、10c的主體12朝向不同的方向。當基板W翻轉於水平與直立狀態之間時，基板W之周緣限位於四個容置單元11內；當基板W於直立狀態時，該基板W直立於其中二個容置單元11上，以供基板持取單元200交接直立的基板W。須注意的是，四個容置單元11僅為限位基板W以進行水平和垂直之間的翻轉，四個容置單元11不會夾持基板W，以免基板W被夾損。
另外三個基板支撐件10a、10b、10d分別裝設在浸泡槽20、單片式噴洗處理槽30和清洗乾燥槽500上。浸泡槽20內的基板支撐件10a呈現為U型槽體，其可容置直立的複數基板W。單片式噴洗處理槽30內的基板支撐件10b呈現為具有凹槽的L型薄板，其可容置直立的單片基板W，且基板支撐件10b具有升降功能而可使L型薄板沉入至單片式噴洗處理槽30，及可上升至單片式噴洗處理槽30上部或部分顯露於外部。清洗乾燥槽500內的基板支撐件10d可容置平放的單片基板W。然而，基板支撐件10、10a、10b、10c、10d是用以放置各單片基板W配合進行各種製程，並供與基板持取單元200或基板翻轉機進行各單片基板W之持取及放置之交接，因此基板支撐件10、10a、10b、10c、10d的形狀不以上述為限，其可依照設計需求而改變。
如圖1、圖8和圖9所示，浸泡槽20用以對垂直的單片或多片基板W進行垂直浸泡處理，浸泡槽20包括複數槽位21和一振動裝置22，複數槽位21設置於基板支撐件10a上，以容納複數基板W；複數槽位21之間至少間隔一第一距離D，以便基板持取單元200具有活動空間而可升降進出浸泡槽20且不至於碰撞到各個槽位21上的基板W。振動裝置22設置於基板支撐件10a下方，以帶動基板支撐件10a振動和增加浸透力，以對基板支撐件10a上的基板W進行振動浸泡處理。基板持取單元200會將複數基板W垂直放置於複數槽位21上，以對複數基板W進行批次式的浸泡處理。然而，浸泡槽20處理基板W的機制不限於對複數基板W進行批次式的浸泡處理，浸泡槽20也可以設計為配合基板持取單元200，讓基板持取單元200一次只將一片基板W垂直放置於其中一槽位21，且浸泡槽20只對該片基板W進行浸泡處理；浸泡完成後，基板持取單元200再與浸泡槽20陸續交接其他基板W，以陸續對各個基板W進行浸泡處理。或者浸泡槽20處理基板W的機制也可以設計為配合基板持取單元200，讓基板持取單元200陸續置入基板W至浸泡槽20，以陸續對各個基板W進行浸泡處理，且基板持取單元200也將浸泡達到一定時間的基板W陸續取出並交接至單片式噴洗處理槽30；在基板持取單元200與浸泡槽20陸續交接基板W以進行浸泡處理之過程中，位於浸泡槽20內之各個基板W仍持續進行浸泡處理，如此一來可以達成各單片基板W獨立進行浸泡處理的功效。其中，前述複數槽位21設置於基板支撐件10a上，基板持取單元200將各單片基板W與複數槽位21之一，進行各單片基板之持取及放置之交接。
如圖1和圖10所示，單片式噴洗處理槽30為具有噴洗口的槽體，其可對基板支撐件10b上的直立的基板W噴灑清潔液體，以對基板W進行垂直噴洗處理。然而，單片式噴洗處理槽30對於基板W的清潔方式不以噴洗處理為限，其也可以變更為具有清洗乾燥功能的機台以進行清洗乾燥。
如圖1、圖3和圖4所示，基板持取單元200設置在滑軌組900上，其可在滑軌組900上沿著移動方向U1滑動。基板持取單元200包括二懸臂210、二基板持取件220和一升降組件230。二懸臂210固定得連接升降組件230，於此實施例，兩懸臂210為固定間距，固定式連接升降組件230。升降組件230可以沿著移動方向U2伸縮以帶動二懸臂210上下移動。各基板持取件220分別對稱得設置於各懸臂210，且二基板持取件220之間的槽位間距G小於基板W的基板直徑R。二基板持取件220用以垂直持取基板W。各基板持取件220包括一溝槽221，各溝槽221可以為弧形或三角形槽體。於一實施例，各溝槽221包括一底部間距T和一頂部間距S，底部間距T小於頂部間距S，且二溝槽221對稱設置以分別接觸欲持取的基板W之兩邊。藉由底部間距T小於頂部間距S之尺寸關係，以及二基板持取件220之間的槽位間距G小於基板W的基板直徑R之尺寸關係，二基板持取件220可受到二懸臂210帶動上升，以持取基板W離開基板支撐件10，或是二基板持取件220可受到二懸臂210帶動下降，以將基板W置於基板支撐件10並離開基板W。於另一實施例，藉由二基板持取件220之間的二溝槽221形狀間距，二溝槽221為上寬下窄之形狀關係；也就是說，二基板持取件220之二溝槽221的上端之間的槽位間距G1，比二溝槽221的下端之間的槽位間距G更寬。二基板持取件220可受到二懸臂210帶動上升，以持取基板W離開基板支撐件10，或是二基板持取件220可受到二懸臂210帶動下降，以將基板W置於基板支撐件10並離開基板W。然而，須注意的是，二基板持取件220僅為托住基板W，並非夾持基板W，以免基板W被夾損；另外，升降組件230的管體伸縮以達成位移效果的原理，已被廣泛應用於各種機械設施中，且其並非本發明之重點，故不多做贅述。
如圖1所示，控制單元400例如為電腦主機，其用以控制基板處理系統1之各個元件活動，以進行各個基板W之製程。清洗乾燥槽500具有噴液口以及吹風口，可用以清洗基板支撐件10d上平放的基板W並吹出熱風以使基板W乾燥。然而，基板支撐件10d也可以設計為托住直立的基板W，如此一來，清洗乾燥槽500也可以清潔直立的基板W之兩面。
如圖1至圖3所示，第一基板翻轉機600為固定設置於一平面。第一基板翻轉機600是旋轉臂，其可帶動基板支撐件10旋轉成水平或直立；藉此，第一基板翻轉機600可將基板支撐件10上的基板W翻轉於水平與直立狀態之間，以便與基板持取單元200交接直立的基板W。第二基板翻轉機700設置鄰近清洗乾燥槽500之基板支撐件10d。第二基板翻轉機700是旋轉臂，其可帶動基板支撐件10c旋轉成水平或直立；藉此，第二基板翻轉機700可將基板支撐件10c上的基板W翻轉於水平與直立狀態之間，以便與基板持取單元200交接直立的基板W，或是將水平的基板W放置在清洗乾燥槽500內的基板支撐件10d上。基板輸出入單元800例如為雙向輸送機構，其用以將各單片基板W沿著輸出入方向V從基板處理組100輸出和輸入。基板輸出入單元800包括一移動件810、一承接板820和一基板輸出入單元軌道830。移動件810樞接承接板820並且可沿著基板輸出入單元軌道830滑動；移動件810是由具有伸縮功能的結構所組成，因此可以在垂直基板輸出入單元軌道830的方向上延伸，以使承接板820接近第一基板翻轉機600。承接板820用以承接基板W，並且可以受移動件810帶動而一起沿著基板輸出入單元軌道830滑動。
當使用者欲應用本發明之基板處理系統1處理基板W時，如圖1和圖2所示，首先，使用者可以操作控制單元400，控制基板輸出入單元800輸入水平狀態的基板W，並藉由滑動件810的移動和延伸，以及承接板820承接基板W之功能，而傳輸至第一基板翻轉機600，其中第一基板翻轉機600的控制主體12接收基板W且讓容置單元11扣住基板W之周緣；藉此，水平狀態之基板W便傳輸至第一基板翻轉機600，且被基板支撐件10穩固得承接，如此一來即可以準備將基板W運輸至浸泡槽20以進行濕式處理。
在將水平狀態之基板W運輸至浸泡槽20之前，如圖1至圖3所示，第一基板翻轉機600之旋轉臂會先從平放狀態旋轉至直立狀態，並且帶動平放的基板支撐件10及承接的基板W一起直立，並控制四個容置單元11張開、不再扣住基板W的周緣，使得基板W後續可以順利離開基板支撐件10。接著，控制單元400會控制基板持取單元200移動至基板處理組100旁邊，以準備使基板持取單元200持取基板支撐件10承接的基板W。
如圖1、圖3、圖5和圖6所示，當基板持取單元200持取基板支撐件10承接的基板W時，首先，控制單元400會控制升降組件230沿著移動方向U2收縮以帶動二基板持取件220下降至低於第一高度；本實施例的第一高度是指基板W的基板圓心C的高度，但第一高度可以變更為小於直立的基板W的基板圓心C的高度，並且由於基板W的形狀不限於圓形，其亦可為方形、橢圓形等形狀，因此第一高度之定義不以基板圓心C之高度為限，第一高度可以變更為小於或等於直立的基板W的頂點之一半高度。接著，控制單元400會控制基板持取單元200在滑軌組900上朝著基板W水平滑動，使得二基板持取件220向基板W水平移動至二基板持取件220分別對準基板W之兩邊。接著，控制單元400會控制升降組件230沿著移動方向U2延伸以帶動二基板持取件220上升至接觸基板W之兩邊，此時，由於二基板持取件220之間的槽位間距G小於基板W的基板直徑R，因此二基板持取件220會持取基板W。接著，如圖1和圖7所示，控制單元400會控制升降組件230繼續沿著移動方向U2延伸以帶動二基板持取件220持取基板W並上升，使得基板W離開基板支撐件10。然而，須注意的是，上述之基板持取單元200持取基板W的流程中的各動作，為各別時間點可觀察到的動作情況，然而以上動作之間是否有其他動作、停頓時間或以上動作為連續時間動作，則可依照製程需求而任意改變。須注意的是，由於二基板持取件220不一定會對準基板W的兩側以從左右兩側持取基板W，二基板持取件220也可以設計為捧著基板W的底部以持取基板W，因此二基板持取件220之間的槽位間距G可以對應得調整為更小的距離。
接著，如圖1、圖8和圖9所示，控制單元400可控制基板持取單元200移動至靠近浸泡槽20之位置，並控制升降組件230沿著移動方向U2延伸，使得二基板持取件220移動至基板支撐件10a的上方，以準備將基板W放置在基板支撐件10a之上並進行浸泡處理。接著，控制單元400會控制升降組件230沿著移動方向U2收縮，讓二基板持取件220持取著基板W並下降，將基板W置於基板支撐件10a並且讓基板W的兩側分別位於兩個槽位21裡。接著，控制單元400會控制升降組件230沿著移動方向U2持續收縮，讓二基板持取件220繼續下降至低於第一高度，並離開基板W。接著，控制單元400會控制基板持取單元200在滑軌組900滑動一第一距離D，以帶動二基板持取件220水平移動第一距離D，使得二基板持取件220遠離基板W。接著，控制單元400會控制升降組件230沿著移動方向U2延伸，帶動二基板持取件220上升以離開基板處理組100之基板支撐件10a。如此一來，基板W便可放置在浸泡槽20內的基板支撐件10a以進行浸泡處理。若是需要對基板W進行振動浸泡處理，則控制單元400也可以控制振動裝置22帶動基板支撐件10a持續振動，如此一來，二基板持取件220可將基板W置於振動中之基板支撐件10a並離開基板W，讓基板W進行振動浸泡處理。待浸泡處理完成後，二基板持取件220可上升持取基板W離開振動中的基板支撐件10a，以繼續接下來的製程。
如圖1和圖10所示，在二基板持取件220持取基板W離開浸泡槽20和基板支撐件10a之後，控制單元400控制基板持取單元200於浸泡槽20及單片式噴洗處理槽30之間交接基板W，將基板W自浸泡槽20移送至單片式噴洗處理槽30內的基板支撐件10b，以對基板W進行噴洗處理，例，藥液噴洗或純水噴洗等，不以此為限。須注意的是，由於基板持取單元200將基板W從基板支撐件10a取起並交接至基板支撐件10b所執行的動作，和基板持取單元200將基板W從直立的基板支撐件10取起並交接至基板支撐件10a所執行的動作相同，因此不須對基板持取單元200將基板W從基板支撐件10a取起並交接至基板支撐件10b所執行的動作再做贅述。
待噴洗處理完成後，二基板持取件220可上升持取基板W離開基板支撐件10b，以繼續接下來的清洗乾燥製程。控制單元400會控制基板持取單元200將基板W自單片式噴洗處理槽30之基板支撐件10b抬起，以準備移送至清洗乾燥槽500。由於清洗乾燥槽500是水平式的清洗機台，因此基板持取單元200需要先將基板W自單片式噴洗處理槽30交接至第二基板翻轉機700和基板支撐件10c，讓第二基板翻轉機700和基板支撐件10c將基板W翻轉為水平狀態，再讓第二基板翻轉機700和基板支撐件10c將水平狀態的基板W置於清洗乾燥槽500之基板支撐件10d之上，以進行水平清洗乾燥。須注意的是，由於第二基板翻轉機700及基板支撐件10c之機構組合，和第一基板翻轉機600及基板支撐件10之機構組合幾乎一樣，且持取和翻轉基板W的動作和原理也一樣，故本領域之通常知識者應可根據先前所述之第一基板翻轉機600及基板支撐件10持取並翻轉基板W之描述，而理解第二基板翻轉機700及基板支撐件10c持取並翻轉基板W之動作細節，因此不須對第二基板翻轉機700及基板支撐件10c持取並翻轉基板W之動作多做贅述。
在基板W完成水平清洗乾燥之製程後，控制單元400會控制基板輸出入單元800接收水平狀態之基板W並輸出至外部，如此一來即可完成基板W之濕式處理。須注意的是，第一實施例雖然是以一次處理一片基板W之濕式處理為例來描述基板處理系統1執行濕式處理過程，但是基板處理系統1執行濕式處理過程事實上也可以應用於一次處理複數基板W之濕式處理，控制單元400可以控制基板持取單元200於浸泡槽20、單片式噴洗處理槽30、清洗乾燥槽500和基板輸出入單元800之間陸續交接各個基板W，將各個基板W自該浸泡槽20依序移送至單片式噴洗處理槽30、清洗乾燥槽500和基板輸出入單元800，以對各個基板W進行完整的濕式處理。
以下請一併參考圖11關於本發明之第二實施例之基板處理系統。圖11係本發明之第二實施例之基板處理系統之示意圖。
如圖11所示，第二實施例與第一實施例的差別在於，在第二實施例中，基板處理系統1a不包括清洗乾燥槽500，且基板處理系統1a更包括一水平單片式噴洗處理槽300；水平單片式噴洗處理槽300以對基板W進行噴洗處理，例，藥液噴洗或純水噴洗等，不以此為限。基板處理組100a為一浸泡槽20及複數基板支撐件10、10a、10c、10e，基板處理組100a不包括單片式噴洗處理槽30。基板支撐件10e位於水平單片式噴洗處理槽300內，其可容置平放的單片基板W。在基板W的濕式處理流程中，基板持取單元200會配合第一基板翻轉機600和基板支撐件10，將基板W翻轉為直立狀態並交接至基板處理組100a之浸泡槽20以執行浸泡處理。浸泡處理完成之基板W會自浸泡槽20移送至第二基板翻轉機700和基板支撐件10c以翻轉為水平狀態，再放置於水平單片式噴洗處理槽300內的基板支撐件10e以進行噴洗處理。
以下請一併參考圖12關於本發明之第三實施例之基板處理系統。圖12係本發明之第三實施例之基板處理系統之示意圖。
如圖12所示，第三實施例與第一實施例的差別在於，在第三實施例中，基板處理系統1b之基板處理組100b為一單片式噴洗處理槽30及複數基板支撐件10、10b、10c、10d，基板處理組100b不包括浸泡槽20。在基板W的濕式處理流程中，基板持取單元200會配合第一基板翻轉機600和基板支撐件10，將基板W翻轉為直立狀態並交接至基板處理組100b之單片式噴洗處理槽30以執行噴洗處理。噴洗處理完成之基板W自單片式噴洗處理槽30移送至第二基板翻轉機700和基板支撐件10c以翻轉為水平狀態，再放置到清洗乾燥槽500內的基板支撐件10d以進行清洗和乾燥處理。最後，控制單元400會控制基板輸出入單元800接收水平狀態之基板W並輸出至外部。
以下請一併參考圖13關於本發明之第四實施例之基板處理系統。圖13係本發明之第四實施例之基板處理系統之示意圖。
如圖13所示，第四實施例與第一實施例的差別在於，在第四實施例之基板處理系統1c中，基板處理系統1c不包括清洗乾燥槽500和第二基板翻轉機700。基板處理組100c僅包括一基板支撐件10，且基板支撐件10設置於第一基板翻轉機600上。基板處理組100c用以將基板翻轉於水平與直立狀態之間，並與基板持取單元200交接直立狀態的基板。使用者可以依照基板的製作需求，而在滑軌組900附近擺設處理基板所需的製程機台，藉此，基板處理組100c和基板持取單元200可以根據不同的製程機台而將基板翻轉於水平與直立狀態之間，並將翻轉後的基板至於該製程機台。
藉由本發明之基板處理系統之結構設計，可以輕鬆得將基板直立狀態持取及放置之交接，以及將基板轉換為平放或直立狀態之間，以配合不同的機台進行浸泡、震動浸泡、水平或垂直噴洗、清洗乾燥等製程。
本發明所提及之基板可為基板形式、載板形式、晶圓形式、晶片形式等，並且可為圓型、方型，並不以此為限。並且藉由本發明之基板處理系統可應用於基板濕製程(蝕刻、清洗、乾燥等)，例：單基板濕製程、多基板濕製程、單一方晶片錫球下金屬蝕刻、薄化晶圓支撐/剝離、貼合/剝離製程、碳化矽再生晶圓、再生矽晶圓等，並不以此為限。
需注意的是，上述僅為實施例，而非限制於實施例。譬如 此不脫離本發明基本架構者，皆應為本專利所主張之權利範圍，而應以專利申請範圍為準。
1、1a、1b、1c:基板處理系統 10、10a、10b、10c、10d、10e:基板支撐件 11:容置單元 12:主體 20:浸泡槽 21:槽位 22:振動裝置 30:單片式噴洗處理槽 100、100a、100b、100c:基板處理組 200:基板持取單元 210:懸臂 220:基板持取件 221:溝槽 230:升降組件 300:水平單片式噴洗處理槽 400:控制單元 500:清洗乾燥槽 600:第一基板翻轉機 700:第二基板翻轉機 800:基板輸出入單元 810:移動件 820:承接板 830:基板輸出入單元軌道 900:滑軌組 C:基板圓心 D:第一距離 G、G1:槽位間距 R:基板直徑 S:底部間距 T:頂部間距 U1、U2:移動方向 V:輸出入方向 W:基板 X:旋轉方向
圖1係本發明之第一實施例之基板處理系統之示意圖。 圖2係本發明之第一實施例之基板支撐件翻轉於水平與直立狀態之間之示意圖。 圖3係本發明之第一實施例之基板持取單元靠近基板支撐件之示意圖。 圖4係本發明之第一實施例之基板持取件之示意圖。 圖5係本發明之第一實施例之基板持取件下降至低於第一高度之示意圖。 圖6係本發明之第一實施例之基板持取件上升至接觸基板之兩邊之示意圖。 圖7係本發明之第一實施例之基板持取件持取基板並上升，使得基板離開基板支撐件之示意圖。 圖8係本發明之第一實施例之基板位於浸泡槽內的基板支撐件上之示意圖。 圖9係本發明之第一實施例之基板持取件浸泡槽內的基板支撐件上的基板之示意圖。 圖10係本發明之第一實施例之基板持取件單片式噴洗處理槽內的基板支撐件上的基板之示意圖。 圖11係本發明之第二實施例之基板處理系統之示意圖。 圖12係本發明之第三實施例之基板處理系統之示意圖。 圖13係本發明之第四實施例之基板處理系統之示意圖。
1:基板處理系統
10、10a、10b、10c、10d:基板支撐件
20:浸泡槽
30:單片式噴洗處理槽
100:基板處理組
200:基板持取單元
400:控制單元
500:清洗乾燥槽
600:第一基板翻轉機
700:第二基板翻轉機
800:基板輸出入單元
810:移動件
820:承接板
830:基板輸出入單元軌道
U1:移動方向
V:輸出入方向
W:基板

Claims (20)

  1. 一種基板處理系統，包括： 一基板處理組，包括至少一基板支撐件，該至少一基板支撐件用以支撐直立的一基板；以及 一基板持取單元，包括二懸臂和二基板持取件，各該基板持取件分別設置於各該懸臂，該二基板持取件用以垂直持取該基板； 其中當該基板持取單元移動至該基板處理組，且該二基板持取件與該基板接觸後，該二基板持取件持取該基板； 其中該基板持取單元持取該基板之步驟包括： 該二基板持取件下降至低於該基板之一第一高度； 該二基板持取件向該基板水平移動至該二基板持取件分別對準該基板之兩邊； 該二基板持取件上升至接觸該基板之兩邊；以及 該二基板持取件上升並持取該基板，使得該基板離開該至少一基板支撐件。
  2. 如申請專利範圍第1項所述之基板處理系統，其中該基板持取單元更用以持取該基板，並將該基板置於該基板處理組；該基板持取單元持取該基板，並將該基板置於該基板處理組之步驟包括： 該二基板持取件持取該基板並下降，將該基板置於該基板支撐件； 該二基板持取件下降至低於該第一高度，並離開該基板； 該二基板持取件水平移動一第一距離以遠離該基板；以及 該二基板持取件上升以離開該基板處理組。
  3. 如申請專利範圍第2項所述之基板處理系統，其中各該基板持取件包括一溝槽，各該溝槽包括一底部間距和一頂部間距，該底部間距小於該頂部間距，且該二溝槽對稱設置以分別接觸該基板之該兩邊；其中藉由該底部間距小於該頂部間距之尺寸關係，該二基板持取件可上升持取該基板離開該至少一基板支撐件，或是該二基板持取件可下降將該基板置於該至少一基板支撐件並離開該基板。
  4. 如申請專利範圍第2項所述之基板處理系統，其中各該基板持取件包括一溝槽，該二溝槽對稱設置以分別接觸該基板之該兩邊；該二溝槽的上端之間的一槽位間距，比該二溝槽的下端之間的另一槽位間距更寬；其中藉由該二溝槽為上寬下窄之形狀關係，該二基板持取件可上升持取該基板離開該至少一基板支撐件，或是該二基板持取件可下降將該基板置於該至少一基板支撐件並離開該基板。
  5. 如申請專利範圍第2項所述之基板處理系統，其中該基板處理組為一基板翻轉機，用以將該基板翻轉於水平與直立狀態之間，並與該基板持取單元交接直立狀態的該基板。
  6. 如申請專利範圍第5項所述之基板處理系統，其中該至少一基板支撐件包括至少一容置單元；當該基板翻轉於水平與直立狀態之間時，該基板之周緣限位於該至少一容置單元內；當該基板於直立狀態時，該基板直立於該至少一容置單元，以供該基板持取單元交接該基板。
  7. 如申請專利範圍第2項所述之基板處理系統，其中該基板處理組為一單片式噴洗處理槽，用以對該基板進行垂直噴洗處理，並與該基板持取單元交接直立狀態的該基板。
  8. 如申請專利範圍第2項所述之基板處理系統，其中該基板處理組為一浸泡槽，用以對該基板進行垂直浸泡處理，並與該基板持取單元交接直立狀態的該基板。
  9. 如申請專利範圍第8項所述之基板處理系統，其中該浸泡槽包括複數槽位，該複數槽位設置於該至少一基板支撐件上，以容納複數基板；該基板持取單元將該複數基板依序單片垂直放置於該複數槽位，以對該複數基板進行批次式的浸泡處理。
  10. 如申請專利範圍第8項所述之基板處理系統，其中該浸泡槽包括複數槽位，該複數槽位設置於該至少一基板支撐件上，以容納複數基板；該基板持取單元將其中一基板垂直放置於其中一槽位，以對該其中一基板進行浸泡處理，且該基板持取單元與該浸泡槽陸續交接其他基板，以陸續對各個基板進行浸泡處理。
  11. 如申請專利範圍第10項所述之基板處理系統，其中在該基板持取單元與該浸泡槽陸續交接各個基板以進行浸泡處理之過程中，位於該浸泡槽內之該基板仍持續進行浸泡處理。
  12. 如申請專利範圍第8項所述之基板處理系統，更包括一水平單片式噴洗處理槽，將該基板自該浸泡槽移送至該水平單片式噴洗處理槽以進行噴洗處理。
  13. 如申請專利範圍第8項、第9項和第10項中的任一項所述之基板處理系統，其中該浸泡槽更包括一振動裝置，該振動裝置帶動該至少一基板支撐件振動，以對該基板進行振動浸泡處理。
  14. 如申請專利範圍第13項所述之基板處理系統，其中該二基板持取件可上升持取該基板離開振動中之該至少一基板支撐件，或是可下降將該基板置於振動中之該至少一基板支撐件並離開該基板。
  15. 如申請專利範圍第9項或第10項所述之基板處理系統，其中該複數槽位之間至少間隔該第一距離，以供該基板持取單元升降進出該浸泡槽。
  16. 如申請專利範圍第2項所述之基板處理系統，更包括一控制單元，用以控制各個基板之濕式處理；該基板處理組更包括一浸泡槽以及一單片式噴洗處理槽；該至少一基板支撐件之數量為複數，且其中二個基板支撐件分別設置於該浸泡槽以及該單片式噴洗處理槽；該浸泡槽包括可容納複數基板之複數槽位，且該複數槽位設置於該浸泡槽內的該基板支撐件上；其中該控制單元控制該基板持取單元與該浸泡槽交接該各個基板，以對該各個基板進行浸泡處理；其中該控制單元控制該基板持取單元於該浸泡槽及該單片式噴洗處理槽之間交接該各個基板，將該各個基板自該浸泡槽移送至該單片式噴洗處理槽，以對該各個基板進行噴洗處理。
  17. 如申請專利範圍第16項所述之基板處理系統，更包括一清洗乾燥槽；該控制單元控制該基板持取單元將該各個基板自該單片式噴洗處理槽移送至該清洗乾燥槽，以對該各個基板進行清洗乾燥。
  18. 如申請專利範圍第17項所述之基板處理系統，更包括一第一基板翻轉機，其中一基板支撐件設置於該第一基板翻轉機上，該第一基板翻轉機將該基板翻轉為直立狀態，以與該基板持取單元交接該基板；該控制單元控制該基板持取單元將該基板自該第一基板翻轉機移送至該浸泡槽，以對該基板進行浸泡處理。
  19. 如申請專利範圍第18項所述之基板處理系統，更包括一第二基板翻轉機，其中一基板支撐件設置於該第二基板翻轉機；該控制單元控制該基板持取單元將該基板自該單片式噴洗處理槽移送至該清洗乾燥槽，以對該基板進行清洗乾燥之步驟包括： 該基板持取單元將該基板自該單片式噴洗處理槽交接至該第二基板翻轉機； 該第二基板翻轉機將該基板翻轉為水平狀態；以及 該第二基板翻轉機將該基板置入該清洗乾燥槽進行水平清洗乾燥。
  20. 如申請專利範圍第19項所述之基板處理系統，更包括一基板輸出入單元，該複數基板經由該基板輸出入單元輸出入該基板處理系統；其中該控制單元控制該基板輸出入單元，將水平狀態之該基板傳輸至該第一基板翻轉機以開始該基板之濕式處理；該控制單元也控制該基板輸出入單元，從該清洗乾燥槽接收水平狀態之該基板，以完成該基板之濕式處理。
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