TWI810835B - 帶有整合基板對準台的乾燥系統 - Google Patents
帶有整合基板對準台的乾燥系統 Download PDFInfo
- Publication number
- TWI810835B TWI810835B TW111107644A TW111107644A TWI810835B TW I810835 B TWI810835 B TW I810835B TW 111107644 A TW111107644 A TW 111107644A TW 111107644 A TW111107644 A TW 111107644A TW I810835 B TWI810835 B TW I810835B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- drying
- robot
- station
- wafer
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 195
- 238000001035 drying Methods 0.000 title claims abstract description 76
- 238000004140 cleaning Methods 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims description 17
- 239000007788 liquid Substances 0.000 claims description 15
- 239000012530 fluid Substances 0.000 claims description 13
- 239000004094 surface-active agent Substances 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 claims 16
- 238000005498 polishing Methods 0.000 description 30
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 8
- 239000002904 solvent Substances 0.000 description 7
- 230000005499 meniscus Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000010410 layer Substances 0.000 description 4
- 238000004590 computer program Methods 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 239000006061 abrasive grain Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002355 dual-layer Substances 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B11/00—Machines or apparatus for drying solid materials or objects with movement which is non-progressive
- F26B11/18—Machines or apparatus for drying solid materials or objects with movement which is non-progressive on or in moving dishes, trays, pans, or other mainly-open receptacles
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B25/00—Details of general application not covered by group F26B21/00 or F26B23/00
- F26B25/001—Handling, e.g. loading or unloading arrangements
- F26B25/003—Handling, e.g. loading or unloading arrangements for articles
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B3/00—Drying solid materials or objects by processes involving the application of heat
- F26B3/02—Drying solid materials or objects by processes involving the application of heat by convection, i.e. heat being conveyed from a heat source to the materials or objects to be dried by a gas or vapour, e.g. air
- F26B3/04—Drying solid materials or objects by processes involving the application of heat by convection, i.e. heat being conveyed from a heat source to the materials or objects to be dried by a gas or vapour, e.g. air the gas or vapour circulating over or surrounding the materials or objects to be dried
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67219—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67294—Apparatus for monitoring, sorting or marking using identification means, e.g. labels on substrates or labels on containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67718—Changing orientation of the substrate, e.g. from a horizontal position to a vertical position
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67751—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
Abstract
一種基板清洗和乾燥系統包括:清洗站;乾燥站,該乾燥站位於該清洗站附近;清洗機器人,該清洗機器人用於將基板從該清洗站轉移到該乾燥站;對準器台,該對準器台與該乾燥站相鄰;機器人臂,該機器人臂可在用於從該乾燥站接收該基板的實質上豎直的第一位置與用於將該基板釋放到該對準器台上的實質上水平的第二位置之間旋轉;以及工廠介面機器人,該工廠介面機器人用於在處於水平取向上的同時將基板從該對準器台轉移到該工廠介面模組中。該對準器台包括可旋轉支撐件,該可旋轉支撐件用於將該基板保持在實質上水平的取向上並將該基板旋轉到一期望的取向。
Description
本揭露案係關於用於乾燥和對準基板的方法及系統。
積體電路通常藉由導電層、半導體層或絕緣層的順序沉積以及藉由該等層的後續處理而形成在基板(例如,半導體晶圓)上。
化學機械拋光(chemical mechanical polishing;CMP)是一種在積體電路製造中使用的用於平坦化基板表面的製程。通常,CMP是藉由提供壓抵拋光表面的基板之間的相對運動來執行的。
在拋光後,必須清洗和乾燥基板,以有效地從基板表面移除污染物。該等污染物可包括來自拋光漿料的磨粒、由於拋光而從基板上移除的材料、從拋光墊上磨掉的粒子、或其他微粒或化學污染物。藉由使用在清洗流體槽中的含水清洗、拋光刷、拋光墊或沖洗浴中之一或多者,可以達到期望的清洗位準。濕基板的乾燥可以使用旋轉乾燥或藉由Marangoni乾燥來執行。在CMP後的清洗和乾燥之後,基板由工廠介面機器人卸載。在將基板從清洗器卸載後,可以藉由工廠介面模組中的在線系統或使用獨立的計量系統來執行基板的量測,例如以偵測基板上的厚度變化。
在一個態樣中,一種基板清洗和乾燥系統包括:清洗站,該清洗站包括用於將基板保持在實質上豎直的取向上的第一支撐件;乾燥站,該乾燥站位於該清洗站附近;清洗機器人,該清洗機器人用於將基板從該清洗站轉移到該乾燥站;對準器台,該對準器台與該乾燥站相鄰;機器人臂,該機器人臂可在用於從該乾燥站接收該基板的實質上豎直的第一位置與用於將該基板釋放到該對準器台上的實質上水平的第二位置之間旋轉;工廠介面模組,該工廠介面模組用於支撐用於保持複數個基板的盒;以及工廠介面機器人,該工廠介面機器人用於在處於水平取向上的同時將基板從該對準器台轉移到該工廠介面模組中。該乾燥站包括用於容納液體的槽、用於將該基板在該液體中保持在大致豎直的取向上的第二支撐件、以及用於輸送包含表面活性劑的乾燥流體的分配器。該對準器台包括可旋轉支撐件,該可旋轉支撐件用於將基板保持在實質上水平的取向上並圍繞實質上垂直於基板的軸將基板旋轉到期望取向。
在另一態樣中,一種用於在CMP清洗器中使用的基板乾燥系統包括:乾燥站,該乾燥站具有乾燥器;對準器台,該對準器台與該乾燥站相鄰;以及機器人臂,該機器人臂可在該乾燥器上方的第一位置與用於將基板釋放到該對準器台的該可旋轉支撐件上的第二位置之間移動,其中該基板處於大致水平的取向上。該對準器台包括可旋轉支撐件,該可旋轉支撐件用於將該基板保持在實質上水平的位置並將該基板旋轉到一期望的取向。
在另一態樣中,一種操作乾燥系統的方法包括用豎直乾燥製程乾燥第一晶圓;將該乾燥的第一晶圓傾斜到水平取向;以及圍繞豎直軸對準該第一晶圓,與此同時用該豎直乾燥製程乾燥第二晶圓。
某些實施方式可包括但不限於以下可能的優點中的一或多者。可以更有效地執行基板的乾燥和對準,從而提高生產量。減少乾燥和對準基板所需的機器人移動的總次數允許機器人保持其穩態循環並簡化了製程。平均處理時間的減少可降低每個基板的成本。基板可經對準並以所需取向插入到在線計量系統或基板盒中。
在附圖和說明書中闡述了一或多個實施方式的細節。根據說明書、附圖和申請專利範圍,本標的的其他特徵、態樣和優點將變得顯而易見。
在化學機械拋光之後,需要清洗和乾燥基板以移除碎片和污染物。在此製程之後,由工廠介面機器人拾取基板。隨後工廠介面機器人將基板放入在線計量站或基板盒中。然而,當插入到在線計量站或基板盒中時,基板通常必須處於預定的取向,亦即「對準」。儘管工廠介面機器人通常具有足夠的自由度來旋轉基板以實現所需的對準,但是該等步驟耗費時間,在該時間期間工廠介面機器人不能執行其他功能,例如將另一基板從盒傳送到拋光系統。因此,由工廠介面機器人對準基板所需的時間會降低生產量並增加處理時間。
可以解決該等問題中的一或多個問題的方法是結合對準系統作為CMP後乾燥製程的一部分,並且將對準系統與工廠介面機器人介面連接。
第1圖圖示了化學機械拋光(chemical mechanical polishing, CMP)系統100的內部視圖。系統100通常包括工廠介面102、輸入穿過站104、拋光機106和清洗器108,該清洗器具有乾燥站134,該乾燥站具有乾燥器(例如Marangoni乾燥器)以乾燥已經清洗的基板。該四個主要部件通常設置在CMP系統100內。
工廠介面102包括用於保持複數個個基板盒110的支撐件、包封腔室的外殼111、以及一或多個工廠介面機器人112。
工廠介面機器人112通常提供在盒110與系統100的其他模組之間(例如,從盒110至輸入站104和從清洗器108的乾燥站134回到盒110)轉移基板所需的運動範圍。
未處理的基板通常由工廠介面機器人112從盒110轉移到輸入站104。輸入站104通常促進在工廠介面機器人112與轉移機器人114之間轉移基板。轉移機器人114在輸入站104與拋光機106之間轉移基板。
拋光機106通常包括轉移站116和一或多個拋光站118。轉移站116被配置為從轉移機器人114接收基板,並將基板轉移到在拋光期間保持基板的承載頭124。在基板上執行拋光操作之後,承載頭124將基板轉移回轉移站116。
每個拋光台118包括可旋轉的盤形壓板,拋光墊120位於該可旋轉的盤形壓板上。壓板可操作以繞軸旋轉。拋光墊120可以是具有外部拋光層和較軟的背襯層的雙層拋光墊。拋光台118進一步包括分配臂122,以將拋光液(例如研磨漿料)分配到拋光墊120上。在研磨漿料中,磨粒可以是氧化矽,但是對於一些拋光製程,使用氧化鈰磨粒。拋光台118亦可包括調理器頭123,以將拋光墊120維持在一致的表面粗糙度。
隨後轉移機器人114從拋光機106移除基板。在一些實施方式中,轉移機器人114將基板以水平取向從拋光機106移除,並將基板豎直地重定向以放置在清洗器108中。
清洗器108通常包括一或多個可以獨立操作或協同操作的清洗站。例如,清洗器108可包括一或多個刷子或拋光墊清洗器130、131和兆頻超音波清洗器132。簡而言之,墊清洗器130包括腔室,可以將基板放置在該腔室中,並且旋轉刷或自旋拋光墊接觸該基板的表面以移除任何殘留的微粒。在兆頻超音波清洗器132中,高頻振動在清洗液中產生受控的空化以清洗基板。在清洗後,將基板轉移到乾燥站134中的乾燥器中。乾燥站134亦可以用作沖洗及乾燥站,例如,以在沖洗液中沖洗基板,且隨後當基板被從沖洗液中移除時乾燥基板。
在一些實施方式中,清洗站中的至少兩個清洗站被配置為在清洗製程期間將基板保持在實質上豎直的取向上,例如偏離豎直軸至多15°。基板可以由從軌道懸吊並可沿軌道移動的清洗機器人臂在清洗站與乾燥站之間在實質上豎直的取向上轉移。控制器140可以使機器人臂保持每個基板並將每個基板沿著軌道從一個站移動到下一個站。乾燥站134可以位於軌道末端處的清洗器108附近。
如第2圖所示,乾燥站134包括液體(B)(例如沖洗液)的槽201和支撐件204,該支撐件將基板205保持在實質上豎直的取向上,例如偏離豎直軸至多15°。乾燥器211,例如Marangoni乾燥器,作為槽201的一部分或支撐在槽201上方。第3圖更詳細地示意性示出了乾燥器211的操作。在Marangoni乾燥器中,將可與液體(B)混溶的溶劑(S)(例如液態或氣態的異丙醇(isopropyl alcohol; IPA))引入到流體彎液面(M),該彎液面係在基板被從浴中提起時或在浴流體被排放流過基板時形成的。溶劑沿著液體的表面被吸收,其中在彎液面的尖端處溶劑的濃度更高。該更高的溶劑濃度導致彎液面尖端處的表面張力低於浴液的主體中的表面張力,從而導致浴液從乾燥彎液面朝向主體浴液流動。此類流動被稱為「Marangoni」流動,並可用於實現基板乾燥,而不會在基板上留下條紋、斑點或浴殘留物。
作為一個實例,在乾燥器211內,具有一或多個乾燥蒸汽噴嘴325的乾燥蒸汽供應被定位成當基板305被從槽201中提起時,使乾燥蒸汽流過基板305的整個水平直徑。乾燥蒸汽可以是溶劑,例如異丙醇。乾燥蒸汽噴嘴325較佳地定位成使得乾燥蒸汽將在空氣/基板/沖洗液界面處被沖洗液吸收,並且該界面較佳地形成彎液面(如由第3圖中的虛線圓圈「M」所包圍的)。或者,溶劑可以液體形式供應到槽201中以在浴流體(B)的頂部形成液膜。
此外,具有一或多個沖洗流體噴嘴323的可選沖洗液供應可被定位為當基板305被從槽201提升到乾燥器211中時,在基板305的整個水平直徑上噴射沖洗液。
返回到第2圖,將基板205降低到槽201中,如箭頭203a所示。基板205由支撐件204保持在槽201中的第一位置202a處。可以由清洗機器人臂將基板205直接降低到槽201中,從而將基板205轉移到槽中的支撐件204上。或者,當支撐件204在槽201上方時,可以由清洗機器人臂將基板205放置在支撐件204上,且隨後可以將帶有基板205的支撐件204下降到槽201中。作為又一個替代方案,可以在槽201上方將基板205從清洗機器人臂交遞到專用機器人,該專用機器人將基板降低到槽中的支撐件204上。
如由箭頭203b所示,由第一機器人臂202將基板205從槽201中的第一位置202a實質上豎直地提升到第二位置202b。第一機器人臂202可以沿著偏離豎直至多15°的軸提升基板205。在第二位置202b中,可以將基板205整個從槽201中移除(如第2圖所示),或者基板205可以僅部分在槽201之外,例如,大約一半在槽201之外。在一些實施方式中,超過一半的基板在液位(例如,來自槽的液位)上方,例如,25-40%的基板可以浸沒在槽中的液體中或者在乾燥蒸汽被供應到基板的位置下方。類似地,在第二位置202b中,基板205可以完全在乾燥器211上方,或者仍然部分在乾燥器中。
第一機器人臂202可以由清洗機器人臂(亦即,將基板205降低到槽201中的同一機器人臂)提供。或者,若支撐件204是豎直可移動的,則第一機器人臂202可由支撐件204提供,亦即支撐件204將基板205提升出槽201。作為另一替代方案,可以例如由清洗機器人臂將基板205降低到槽201中的支撐件204(在第2圖中以虛線圖示)(例如,靜止支撐件)上,且隨後可以使用單獨的機器人臂將基板205從支撐件204上提起並提升出槽201。例如,第一機器人臂202可以是推桿銷,該推桿銷將基板從底部部分地推出槽201。或者,第一機器人臂202可包括帶凹口的主體,該帶凹口的主體用於保持基板的底部邊緣和從基板的底部邊緣處的一點提升;以及雙指夾鉗,該雙指夾鉗用於將基板的頂部邊緣保持在適當位置。
在第二位置202b中,將基板205從第一機器人臂202轉移到第二機器人臂221,例如輸出站臂。例如,第二機器人臂221可以從第一機器人臂202以實質上豎直的取向(例如,偏離豎直軸至多15°)拾取基板205。當第二機器人臂221正在保持基板205時,可以將第一機器人臂202重新插入槽中或者在槽內下降回到第一位置202a。
若處於交遞位置(亦即,第二位置202b)的基板沒有完全離開槽201和乾燥器211,則第二機器人臂221可以實質上豎直地提升基板205,直到基板205已經離開槽201和乾燥器211。如由箭頭222所示,從基板205已經離開槽201和乾燥器211的位置,第二機器人臂221將基板205從實質上豎直的取向221a(例如,偏離豎直軸至多15°)傾斜到實質上水平的取向221b(例如,偏離水平軸至多15°),並將基板205放置到對準器台231的可旋轉基座232上。基板205擱置在對準器台231的可旋轉基座232上的第三位置202c中,如第2圖所示。基板205可以藉由真空吸力耦接至可旋轉基座232,該真空吸力可以在基座232旋轉期間將基板205保持在適當位置。或者,可以由基板邊緣夾鉗或輥旋轉基板205,該基板邊緣夾鉗或輥可以保持基板205並將該基板旋轉到期望的取向。
第二機器人臂221可包括帶凹口的主體,該帶凹口的主體用於保持基板的頂部邊緣和從基板的頂部邊緣處的一點(例如,在第一機器人臂202的夾鉗的兩個指狀物之間的一點)進行提升;以及雙指夾鉗,該雙指夾鉗用於保持基板的底部邊緣(例如,在第一機器人臂202的帶凹口的主體的相對側上)。例如,一旦基板205被提升出槽201,第二機器人臂221就抓握基板205,第一機器人臂202釋放基板205並縮回,隨後第二機器人臂221將晶圓移動到水平取向。
在一些實施方式中,不是單獨的第一機器人和第二機器人,而是單個機器人臂用於將基板205從槽201中的第一位置202a提升到在槽201之外的第二位置202b並且在乾燥器211之上,且隨後將基板205從第二位置202b旋轉到對準器台231上方的實質上水平的第三位置202c。
在對準感測器234偵測基板205的取向的同時,可旋轉基座232如由箭頭233所示旋轉。控制器140可用於指定基板205的期望取向。一旦對準製程完成,亦即基板已經被旋轉到期望的取向,工廠介面機器人112就從可旋轉基座232以實質上水平的取向拾取基板205,並將基板205傳送出乾燥站134。由箭頭242圖示了工廠介面機器人112的移動。以此方式,對準系統可以整合作為CMP後乾燥製程的一部分,該CMP後乾燥製程係至工廠介面機器人的交遞的一部分。下面參照第4A圖至第4E圖更詳細地描述同時乾燥和對準多個基板的製程。
第4A圖圖示了處於實質上豎直的取向(例如偏離豎直軸至多15°)上的第二機器人臂221(例如,輸出站臂)、對準器台231和處理第一基板205a的乾燥器201。由於第一基板205a以實質上豎直的取向(例如,偏離豎直軸至多15°)定位在乾燥器201中,所以第一基板205a的乾燥被稱為豎直乾燥製程。如第4B圖所示,一旦乾燥完成,第一機器人臂202就將第一基板205a豎直地部分或全部移出槽201和乾燥器211,並且第二機器人臂221以如上文參考第2圖所述的方式拾取基板。接下來,若需要,則第二機器人臂221完成將基板提升出槽201和乾燥器211。隨後,第二機器人臂221從實質上豎直的取向傾斜到實質上水平的取向,例如偏離水平軸至多15°(如箭頭251所示),並將第一基板205a放置到對準器台231上,如第4C圖所示。與此同時,第二基板205b(如第4D圖所示)可以上面參照第2圖所述的方式進入乾燥器201。
現在參考第4D圖,如箭頭253所示,對準器台231將第一基板205a旋轉到期望取向。對準器台231可以順時針或逆時針旋轉基板205a。旋轉可以圍繞垂直於基板表面的軸進行,並且該軸可以穿過基板的中心。與此同時,當第二基板205b正在乾燥器201中被處理的同時,如箭頭252所示,第二機器人臂221從水平取向傾斜回到豎直取向(例如,偏離豎直軸15°)。接下來,參考第4E圖,一旦第一基板205a的對準製程完成,工廠介面機器人112就如箭頭242所示朝向對準器台231移動,以實質上水平的取向從對準器台231拾取第一基板205a,並以箭頭243所示的方向將該第一基板移出乾燥站。與此同時,第二基板205b豎直移出乾燥器201,並以如上文參考第2圖所述的方式與第二機器人臂221介面連接。
以此方式,可以在一個乾燥站中同時乾燥和對準多個基板,從而導致顯著的生產量增加及處理時間減少。由於乾燥器201不需要在開始處理第二基板205b之前等待工廠介面機器人取得第一基板205a,因此乾燥器生產率可以提高高達18%。此外,可以減少每次基板對準需要由工廠介面機器人112執行的移動次數,使得工廠介面機器人112能夠維持其穩態循環並提高生產率。
在另一個實施方式中,對準器台231可以用用於晶圓輸出的靜態站代替,使得直接由工廠介面機器人112從靜態站拾取基板205a,並將該基板移出以進行進一步處理,而無需對準。使用此種實施方式,工廠介面機器人112仍然與乾燥站關鍵路徑解耦,從而允許與上面參照第4A圖至第4E圖所述的優點相同的優點,諸如顯著的生產量增加和處理時間減少。
本文所述的系統的控制器和其他計算設備部分可以在數位電子電路中實施,或者在電腦軟體、固件或硬體中實施。例如,控制器可包括處理器以執行儲存在電腦程式產品中(例如,非暫時性機器可讀儲存媒體中)的電腦程式。此種電腦程式(亦稱為程式、軟體、軟體應用程序或代碼)可以用任何形式的編程語言編寫,包括編譯或解釋語言,並且其可以以任何形式部署,包括作為獨立程式或作為模組、部件、子常式、或適合在計算環境中使用的其他單元。
儘管本文件包含許多特定的實施細節,但該等實施細節不應被解釋為對任何發明或可能主張保護的範疇的限制,而是作為對特定發明的特定實施例的特定特徵的描述。本文件中在單獨實施例的上下文中描述的某些特徵亦可以在單個實施例中組合實施。相反,在單個實施例的上下文中描述的各種特徵亦可以在多個實施例中單獨實施或者以任何合適的子組合實施。此外,儘管特徵可以在上面被描述為以某些組合起作用並且甚至最初被如此主張,但是來自所主張的組合的一或多個特徵在一些情況下可以從該組合中刪除,並且所主張的組合可涉及子組合或子組合的變體。
因此,已經描述了標的的特定實施例。其他實施例在以下申請專利範圍的範疇內。
100:化學機械拋光(CMP)系統
102:工廠介面
104:輸入穿過站/輸入站
106:拋光機
108:清洗器
110:基板盒
111:外殼
112:工廠介面機器人
114:轉移機器人
116:轉移站
118:拋光站
120:拋光墊
122:分配臂
123:調理器頭
124:承載頭
130:刷子或拋光墊清洗器
131:刷子或拋光墊清洗器
132:兆頻超音波清洗器
134:乾燥站
140:控制器
201:槽
202:第一機器人臂
202a:第一位置
202b:第二位置
202c:第三位置
203a:箭頭
203b:箭頭
204:支撐件
205:基板
205a:第一基板
205b:第二基板
211:乾燥器
221:第二機器人臂
221a:實質上豎直的取向
221b:實質上水平的取向
222:箭頭
231:對準器台
232:可旋轉基座
233:箭頭
234:對準感測器
242:箭頭
243:箭頭
251:箭頭
252:箭頭
253:箭頭
305:基板
323:沖洗流體噴嘴
325:乾燥蒸汽噴嘴
B:液體
M:液面
S:溶劑
第1圖是化學機械拋光系統的示意性俯視圖。
第2圖是包括乾燥站和基板對準台的乾燥系統的示意性側視圖。
第3圖是位於乾燥器內的基板和噴嘴的示意性特寫圖。
第4A圖至第4E圖是示意性透視圖,圖示了乾燥系統同時處理一個基板和對準另一個基板的操作。
各個附圖中相同的附圖標記和名稱表示相同的元件。
國內寄存資訊(請依寄存機構、日期、號碼順序註記)
無
國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記)
無
112:工廠介面機器人
201:槽
202:第一機器人臂
202a:第一位置
202b:第二位置
202c:第三位置
203a:箭頭
203b:箭頭
204:支撐件
205:基板
211:乾燥器
221:第二機器人臂
221a:實質上豎直的取向
221b:實質上水平的取向
222:箭頭
231:對準器台
232:可旋轉基座
233:箭頭
234:對準感測器
242:箭頭
Claims (20)
- 一種基板清洗及乾燥系統,包括:一清洗站,該清洗站包括用於將一基板保持在一實質上豎直的取向上的一第一支撐件;一乾燥站,該乾燥站位於該清洗站附近,該乾燥站包括用於容納一液體的一槽、用於將該基板在該液體中保持在一大致豎直的取向上的一第二支撐件、以及用於輸送包含一表面活性劑的乾燥流體的一分配器;一清洗機器人,該清洗機器人用於將一基板從該清洗站轉移到該乾燥站;一對準器台,該對準器台與該乾燥站相鄰,該對準器台包括一可旋轉支撐件,該可旋轉支撐件用於將該基板保持在一基本上水平的取向上並圍繞基本上垂直於該基板的一軸將該基板旋轉至一期望取向;一機器人臂,該機器人臂可在用於從該乾燥站接收該基板的一實質上豎直的第一位置與用於將該基板釋放到該對準器台上的一實質上水平的第二位置之間旋轉;一工廠介面模組,該工廠介面模組用於支撐用於保持複數個基板的一盒;以及一工廠介面機器人,該工廠介面機器人用於在處於一水平取向上的同時將一基板從該對準器台轉移到該工廠介面模組中。
- 如請求項1所述之系統,其中該清洗機器人被配置為將該基板降低到該槽中。
- 如請求項2所述之系統,包括一第一機器人,該第一機器人被配置為將該基板從該槽中提升到用於進行至該機器人臂的一交遞的一位置,其中該機器人臂由一第二機器人提供。
- 如請求項2所述之系統,其中該機器人臂被配置為將該基板從該槽中提升到該第一位置。
- 如請求項2所述之系統,進一步包括一支撐件,該支撐件用於將該基板保持在該槽中,並且其中該清洗機器人被配置為將該基板降低到該支撐件上。
- 如請求項1所述之系統,包括一第一機器人,該第一機器人被配置為從該槽上方的該清洗機器人以一交遞接收該基板,並將該基板降低到該槽中。
- 如請求項6所述之系統,其中該第一機器人被配置為將該基板從該槽中提升到該第一位置。
- 如請求項7所述之系統,其中該機器人臂由該第一機器人提供。
- 如請求項8所述之系統,包括一第二機器人,該第二機器人提供該機器人臂,並且該機器人臂被配置為從該槽上方的該第一機器人以一交遞接收該基板。
- 如請求項6所述之系統,進一步包括一支撐件,該支撐件用於將該基板保持在該槽中,並且其中該第一機器人被配置為將該基板降低到該支撐件上。
- 一種用於一CMP清洗器的基板乾燥系統,該乾燥系統包括: 一乾燥站,該乾燥站具有一乾燥器;一對準器台,該對準器台與該乾燥站相鄰,該對準器台包括一可旋轉支撐件,該可旋轉支撐件用於將一基板保持在一基本上水平的位置並將該基板旋轉到一期望的取向;以及一機器人臂,該機器人臂可在該乾燥器上方的一第一位置與用於將基板釋放到該對準器台的該可旋轉支撐件上的一第二位置之間移動,其中該基板處於一大致水平的取向上。
- 如請求項11所述之系統,其中該乾燥台是一Marangoni蒸汽乾燥台。
- 如請求項11所述之系統,其中該機器人臂包括指狀物,該等指狀物可調節以在該第一位置與該第二位置之間旋轉期間抓握該等晶圓的邊緣。
- 如請求項11所述之系統,其中該第一位置是用於從該乾燥站接收處於一實質上豎直的取向上的晶圓的一實質上豎直的位置,並且該第二位置是用於將處於一實質上水平取向上的晶圓釋放到該對準器台上的一實質上水平的位置。
- 如請求項14所述之系統,其中該對準器台包括可繞一豎直軸旋轉並可耦接至該對準器台上的晶圓下表面的一基座,以及用於偵測該等晶圓上的旋轉基準標記的一對準感測器。
- 一種操作一乾燥系統的方法,包括以下步 驟:用一豎直乾燥製程乾燥一第一晶圓;將該乾燥的第一晶圓傾斜到一水平取向;以及圍繞一豎直軸對準該第一晶圓,與此同時用該豎直乾燥製程乾燥一第二晶圓。
- 如請求項16所述之方法,其中該豎直乾燥製程是一Marangoni乾燥製程。
- 如請求項16所述之方法,其中該傾斜該乾燥的第一晶圓之步驟包括以下步驟:在一豎直取向上抓握該乾燥的第一晶圓,將該被抓握的第一晶圓旋轉到該水平取向,以及將該第一晶圓釋放到一用於該對準的台上。
- 如請求項18所述之方法,其中該對準該晶圓之步驟包括以下步驟:偵測該晶圓上的一基準標記。
- 如請求項19所述之方法,其中該對準該晶圓之步驟包括以下步驟:在偵測到該基準標記時停止該旋轉,或者在偵測到該基準標記時進一步旋轉達一選定的斜角並隨後停止該旋轉。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US202163156298P | 2021-03-03 | 2021-03-03 | |
US63/156,298 | 2021-03-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202243077A TW202243077A (zh) | 2022-11-01 |
TWI810835B true TWI810835B (zh) | 2023-08-01 |
Family
ID=83116345
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW111107644A TWI810835B (zh) | 2021-03-03 | 2022-03-03 | 帶有整合基板對準台的乾燥系統 |
Country Status (5)
Country | Link |
---|---|
US (2) | US11929264B2 (zh) |
KR (1) | KR20230150865A (zh) |
CN (1) | CN117157741A (zh) |
TW (1) | TWI810835B (zh) |
WO (1) | WO2022187093A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11929264B2 (en) | 2021-03-03 | 2024-03-12 | Applied Materials, Inc. | Drying system with integrated substrate alignment stage |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005006409A1 (de) * | 2003-07-09 | 2005-01-20 | Rena Sondermaschinen Gmbh | Vorrichtung zur reinigung von wafern nach dem cmp-prozess |
KR20090037529A (ko) * | 2007-10-12 | 2009-04-16 | (주)스마트에이스 | 웨이퍼 습식 세정 장치 |
US20160181086A1 (en) * | 2014-12-19 | 2016-06-23 | Applied Materials, Inc. | Systems and methods for rinsing and drying substrates |
US20170236739A1 (en) * | 2005-03-30 | 2017-08-17 | Brooks Automation, Inc. | High speed substrate aligner apparatus |
US20200176279A1 (en) * | 2018-12-03 | 2020-06-04 | Applied Materials, Inc. | Methods and apparatus for marangoni drying |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5679059A (en) | 1994-11-29 | 1997-10-21 | Ebara Corporation | Polishing aparatus and method |
US6328814B1 (en) | 1999-03-26 | 2001-12-11 | Applied Materials, Inc. | Apparatus for cleaning and drying substrates |
US20020121290A1 (en) | 1999-08-25 | 2002-09-05 | Applied Materials, Inc. | Method and apparatus for cleaning/drying hydrophobic wafers |
US6413145B1 (en) | 2000-04-05 | 2002-07-02 | Applied Materials, Inc. | System for polishing and cleaning substrates |
US6645550B1 (en) | 2000-06-22 | 2003-11-11 | Applied Materials, Inc. | Method of treating a substrate |
US6726848B2 (en) * | 2001-12-07 | 2004-04-27 | Scp Global Technologies, Inc. | Apparatus and method for single substrate processing |
JP3827627B2 (ja) * | 2002-08-13 | 2006-09-27 | 株式会社荏原製作所 | めっき装置及びめっき方法 |
US20070111519A1 (en) * | 2003-10-15 | 2007-05-17 | Applied Materials, Inc. | Integrated electroless deposition system |
US7314808B2 (en) * | 2004-12-23 | 2008-01-01 | Applied Materials, Inc. | Method for sequencing substrates |
US20060201532A1 (en) | 2005-03-14 | 2006-09-14 | Applied Materials, Inc. | Semiconductor substrate cleaning system |
WO2006124472A2 (en) * | 2005-05-12 | 2006-11-23 | Applied Materials, Inc. | Method and apparatus for vertical transfer of semiconductor substrates in a cleaning module |
US7694688B2 (en) * | 2007-01-05 | 2010-04-13 | Applied Materials, Inc. | Wet clean system design |
US20100041316A1 (en) | 2008-08-14 | 2010-02-18 | Yulin Wang | Method for an improved chemical mechanical polishing system |
JP5324232B2 (ja) | 2009-01-08 | 2013-10-23 | 日東電工株式会社 | 半導体ウエハのアライメント装置 |
US20120306139A1 (en) | 2011-06-03 | 2012-12-06 | Arthur Keigler | Parallel single substrate processing system holder |
US9393669B2 (en) | 2011-10-21 | 2016-07-19 | Strasbaugh | Systems and methods of processing substrates |
KR20230037672A (ko) * | 2013-01-22 | 2023-03-16 | 브룩스 오토메이션 인코퍼레이티드 | 기판 이송기 |
KR102203498B1 (ko) | 2013-01-31 | 2021-01-15 | 어플라이드 머티어리얼스, 인코포레이티드 | 화학 기계적 평탄화후 기판 클리닝을 위한 방법 및 장치 |
WO2014149340A1 (en) * | 2013-03-15 | 2014-09-25 | Applied Materials, Inc. | Substrate position aligner |
US10518382B2 (en) | 2016-05-03 | 2019-12-31 | Kctech Co., Ltd. | Substrate processing system |
US10978331B2 (en) * | 2018-03-30 | 2021-04-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Systems and methods for orientator based wafer defect sensing |
KR20210063423A (ko) | 2018-10-15 | 2021-06-01 | 항저우 중구이 일렉트로닉 테크놀로지 컴퍼니 리미티드 | 일종 cmp 웨이퍼 클리닝 장치, 웨이퍼 이송 기계핸드 및 웨이퍼 회전방법 |
US11929264B2 (en) | 2021-03-03 | 2024-03-12 | Applied Materials, Inc. | Drying system with integrated substrate alignment stage |
-
2022
- 2022-02-25 US US17/681,670 patent/US11929264B2/en active Active
- 2022-02-25 US US17/681,671 patent/US20220282918A1/en active Pending
- 2022-02-25 WO PCT/US2022/017892 patent/WO2022187093A1/en active Application Filing
- 2022-02-25 KR KR1020237033358A patent/KR20230150865A/ko unknown
- 2022-02-25 CN CN202280026779.7A patent/CN117157741A/zh active Pending
- 2022-03-03 TW TW111107644A patent/TWI810835B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005006409A1 (de) * | 2003-07-09 | 2005-01-20 | Rena Sondermaschinen Gmbh | Vorrichtung zur reinigung von wafern nach dem cmp-prozess |
US20170236739A1 (en) * | 2005-03-30 | 2017-08-17 | Brooks Automation, Inc. | High speed substrate aligner apparatus |
KR20090037529A (ko) * | 2007-10-12 | 2009-04-16 | (주)스마트에이스 | 웨이퍼 습식 세정 장치 |
US20160181086A1 (en) * | 2014-12-19 | 2016-06-23 | Applied Materials, Inc. | Systems and methods for rinsing and drying substrates |
US20200176279A1 (en) * | 2018-12-03 | 2020-06-04 | Applied Materials, Inc. | Methods and apparatus for marangoni drying |
Also Published As
Publication number | Publication date |
---|---|
US11929264B2 (en) | 2024-03-12 |
US20220282918A1 (en) | 2022-09-08 |
WO2022187093A1 (en) | 2022-09-09 |
US20220285175A1 (en) | 2022-09-08 |
TW202243077A (zh) | 2022-11-01 |
KR20230150865A (ko) | 2023-10-31 |
CN117157741A (zh) | 2023-12-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6874515B2 (en) | Substrate dual-side processing apparatus | |
JP4939376B2 (ja) | 基板処理装置 | |
US9646859B2 (en) | Disk-brush cleaner module with fluid jet | |
JP5478586B2 (ja) | 洗浄装置、剥離システム、洗浄方法、プログラム及びコンピュータ記憶媒体 | |
JP2014082470A (ja) | 基板処理装置 | |
JP2014167996A (ja) | 研磨装置および研磨方法 | |
JP2018006549A (ja) | 基板処理装置 | |
US9466512B2 (en) | Substrate cleaning apparatus and substrate processing apparatus | |
TWI810835B (zh) | 帶有整合基板對準台的乾燥系統 | |
KR20150120869A (ko) | 기판 처리 장치 | |
US6358131B1 (en) | Polishing apparatus | |
JP6297308B2 (ja) | 基板洗浄装置及び基板洗浄方法 | |
JP3766177B2 (ja) | 基板処理装置および基板洗浄装置 | |
JPH0866865A (ja) | ポリッシング装置 | |
JP7262594B2 (ja) | 塗布、現像装置 | |
WO2019138881A1 (ja) | 洗浄装置、洗浄方法及びコンピュータ記憶媒体 | |
JP5689367B2 (ja) | 基板搬送方法および基板搬送機 | |
JP4050180B2 (ja) | 基板処理方法 | |
JP2023156015A (ja) | 基板洗浄装置及び基板処理方法 | |
TW202239528A (zh) | 用於水平預清潔模組的墊載體 | |
JP2003220556A (ja) | ポリッシング装置及び方法 | |
KR20000055454A (ko) | 화학적 기계적 연마 설비 | |
US20180315622A1 (en) | Apparatus and method for cleaning a back surface of a substrate | |
JPH08250457A (ja) | 縦型ウエハ研磨装置 | |
KR20150072198A (ko) | 기판 처리 장치 및 기판 처리 방법 |