CN111081591A - 基板处理系统 - Google Patents

基板处理系统 Download PDF

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CN111081591A
CN111081591A CN201811326178.XA CN201811326178A CN111081591A CN 111081591 A CN111081591 A CN 111081591A CN 201811326178 A CN201811326178 A CN 201811326178A CN 111081591 A CN111081591 A CN 111081591A
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substrate
tank
processing system
processing
holding unit
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CN111081591B (zh
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冯傳彰
刘茂林
吴庭宇
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Scientech Corp
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Scientech Corp
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    • H—ELECTRICITY
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/102—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration with means for agitating the liquid
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Abstract

一种基板处理系统包括一基板处理组和一基板持取单元。基板处理组包括基板支撑件，基板支撑件用以支撑直立的一基板。基板持取单元包括二悬臂和二基板持取件。各基板持取件分别设置于各悬臂。二基板持取件用以垂直持取基板。当基板持取单元移动至基板处理组，且二基板持取件与基板接触后，二基板持取件持取基板。

Description

基板处理系统
技术领域
本发明关于一种基板处理系统，特别是一种方便持取、放置或交接直立状态的基板，以及将基板转换为平放或直立状态之间，以配合进行各种工艺的基板处理系统。
背景技术
在半导体工艺中，需先对基板进行多道清洁程序，以移除基板表面的杂质；或者蚀刻基板形成图案后，也必须借由多道清洁程序以去除基板表面的光阻或金属膜。在一般的清洁程序里，先将基板浸泡于化学液，再以喷洗的方式清洗基板，最后再以旋转的方式干燥基板。然而，将基板置入浸泡、喷洗或旋转的机台时，须配合不同的机台设计而将基板直立或平放。
因此，如何提供一种方便将基板持取、放置或交接直立状态的基板，以及将基板转换为平放或直立状态之间，以配合进行各种工艺的基板处理系统，遂成为一值得研讨的课题。
发明内容
本发明的主要目的在于提供一种方便持取、放置或交接直立状态的基板，以及将基板转换为平放或直立状态之间，以配合进行各种工艺的基板处理系统。
为达成上述的目的，本发明的一种基板处理系统包括一基板处理组和一基板持取单元。基板处理组包括基板支撑件，基板支撑件用以支撑直立的一基板。基板持取单元包括二悬臂和二基板持取件，各基板持取件分别设置于各悬臂，二基板持取件用以垂直持取基板。当基板持取单元移动至基板处理组，且二基板持取件与基板接触后，二基板持取件持取基板。基板持取单元持取基板的步骤包括：二基板持取件下降至低于第一高度；二基板持取件向基板水平移动至二基板持取件分别对准基板的两边；二基板持取件上升至接触基板的两边；二基板持取件上升并持取基板，使得基板离开基板支撑件。
附图说明
图1为本发明的第一实施例的基板处理系统的示意图。
图2为本发明的第一实施例的基板支撑件翻转于水平与直立状态之间的示意图。
图3为本发明的第一实施例的基板持取单元靠近基板支撑件的示意图。
图4为本发明的第一实施例的基板持取件的示意图。
图5为本发明的第一实施例的基板持取件下降至低于第一高度的示意图。
图6为本发明的第一实施例的基板持取件上升至接触基板的两边的示意图。
图7为本发明的第一实施例的基板持取件持取基板并上升，使得基板离开基板支撑件的示意图。
图8为本发明的第一实施例的基板位于浸泡槽内的基板支撑件上的示意图。
图9为本发明的第一实施例的基板持取件浸泡槽内的基板支撑件上的基板的示意图。
图10为本发明的第一实施例的基板持取件单片式喷洗处理槽内的基板支撑件上的基板的示意图。
图11为本发明的第二实施例的基板处理系统的示意图。
图12为本发明的第三实施例的基板处理系统的示意图。
图13为本发明的第四实施例的基板处理系统的示意图。
其中附图标记为：
基板处理系统1、1a、1b、1c
基板支撑件10、10a、10b、10c、10d、10e
容置单元11
主体12
浸泡槽20
槽位21
振动装置22
单片式喷洗处理槽30
基板处理组100、100a、100b、100c
基板持取单元200
悬臂210
基板持取件220
沟槽221
升降组件230
水平单片式喷洗处理槽300
控制单元400
清洗干燥槽500
第一基板翻转机600
第二基板翻转机700
基板输出入单元800
移动件810
承接板820
基板输出入单元轨道830
滑轨组900
基板圆心C
第一距离D
槽位间距G、G1
基板直径R
底部间距S
顶部间距T
移动方向U1、U2
输出入方向V
基板W
旋转方向X
具体实施方式
为能让贵审查委员能更了解本发明的技术内容，特举较佳具体实施例说明如下。
以下请一并参考图1至图10关于本发明的第一实施例的基板处理系统。图1为本发明的第一实施例的基板处理系统的示意图；图2为本发明的第一实施例的基板支撑件翻转于水平与直立状态之间的示意图；图3为本发明的第一实施例的基板持取单元靠近基板支撑件的示意图；图4为本发明的第一实施例的基板持取件的示意图；图5为本发明的第一实施例的基板持取件下降至低于第一高度的示意图；图6为本发明的第一实施例的基板持取件上升至接触基板的两边的示意图；图7为本发明的第一实施例的基板持取件持取基板并上升，使得基板离开基板支撑件的示意图；图8为本发明的第一实施例的基板位于浸泡槽内的基板支撑件上的示意图；图9为本发明的第一实施例的基板持取件浸泡槽内的基板支撑件上的基板的示意图；图10为本发明的第一实施例的基板持取件单片式喷洗处理槽内的基板支撑件上的基板的示意图。
如图1所示，在第一实施例中，基板处理系统1可持取、放置或交接直立状态的基板W，以及将基板W转换为平放或直立状态之间，以配合进行各种工艺。基板处理系统1包括一基板处理组100、一基板持取单元200、控制单元400、一清洗干燥槽500、一第一基板翻转机600、一第二基板翻转机700、一基板输出入单元800和一滑轨组900。
如图1至图3所示，基板处理组100包括多个基板支撑件10、10a、10b、10c、10d、一浸泡槽20以及一单片式喷洗处理槽30。基板支撑件10、10a、10b、10c、10d用以支撑直立的基板W，其中二个基板支撑件10、10c分别枢接第一基板翻转机600和第二基板翻转机700上，第一基板翻转机600和第二基板翻转机700可以旋转以使二个基板支撑件10、10c直立或平放。二个基板支撑件10、10c皆包括四个容置单元11和一个主体12。四个容置单元11皆为圆弧状的容置槽，并可移动地连接主体12，然而容置单元11的数量和形状不以上述为限，其可依照设计需求而改变，例如改变为一个半圆形的容置槽。四个容置单元11可以相对主体12张开或收缩以托住基板W；基板支撑件10、10c也可以分别相对第一基板翻转机600和第二基板翻转机700沿着旋转方向X旋转，而使基板支撑件10、10c的主体12朝向不同的方向。当基板W翻转于水平与直立状态之间时，基板W的周缘限位于四个容置单元11内；当基板W于直立状态时，该基板W直立于其中二个容置单元11上，以供基板持取单元200交接直立的基板W。须注意的是，四个容置单元11仅为限位基板W以进行水平和垂直之间的翻转，四个容置单元11不会夹持基板W，以免基板W被夹损。
另外三个基板支撑件10a、10b、10d分别装设在浸泡槽20、单片式喷洗处理槽30和清洗干燥槽500上。浸泡槽20内的基板支撑件10a呈现为U型槽体，其可容置直立的多个基板W。单片式喷洗处理槽30内的基板支撑件10b呈现为具有凹槽的L型薄板，其可容置直立的单片基板W，且基板支撑件10b具有升降功能而可使L型薄板沉入至单片式喷洗处理槽30，及可上升至单片式喷洗处理槽30上部或部分显露于外部。清洗干燥槽500内的基板支撑件10d可容置平放的单片基板W。然而，基板支撑件10、10a、10b、10c、10d是用以放置各单片基板W配合进行各种工艺，并供与基板持取单元200或基板翻转机进行各单片基板W的持取及放置的交接，因此基板支撑件10、10a、10b、10c、10d的形状不以上述为限，其可依照设计需求而改变。
如图1、图8和图9所示，浸泡槽20用以对垂直的单片或多片基板W进行垂直浸泡处理，浸泡槽20包括多个槽位21和一振动装置22，多个槽位21设置于基板支撑件10a上，以容纳多个基板W；多个槽位21之间至少间隔一第一距离D，以便基板持取单元200具有活动空间而可升降进出浸泡槽20且不至于碰撞到各个槽位21上的基板W。振动装置22设置于基板支撑件10a下方，以带动基板支撑件10a振动和增加浸透力，以对基板支撑件10a上的基板W进行振动浸泡处理。基板持取单元200会将多个基板W垂直放置于多个槽位21上，以对多个基板W进行批次式的浸泡处理。然而，浸泡槽20处理基板W的机制不限于对多个基板W进行批次式的浸泡处理，浸泡槽20也可以设计为配合基板持取单元200，让基板持取单元200一次只将一片基板W垂直放置于其中一槽位21，且浸泡槽20只对该片基板W进行浸泡处理；浸泡完成后，基板持取单元200再与浸泡槽20陆续交接其他基板W，以陆续对各个基板W进行浸泡处理。或者浸泡槽20处理基板W的机制也可以设计为配合基板持取单元200，让基板持取单元200陆续置入基板W至浸泡槽20，以陆续对各个基板W进行浸泡处理，且基板持取单元200也将浸泡达到一定时间的基板W陆续取出并交接至单片式喷洗处理槽30；在基板持取单元200与浸泡槽20陆续交接基板W以进行浸泡处理的过程中，位于浸泡槽20内的各个基板W仍持续进行浸泡处理，如此一来可以达成各单片基板W独立进行浸泡处理的功效。其中，前述多个槽位21设置于基板支撑件10a上，基板持取单元200将各单片基板W与多个槽位21之一，进行各单片基板的持取及放置的交接。
如图1和图10所示，单片式喷洗处理槽30为具有喷洗口的槽体，其可对基板支撑件10b上的直立的基板W喷洒清洁液体，以对基板W进行垂直喷洗处理。然而，单片式喷洗处理槽30对于基板W的清洁方式不以喷洗处理为限，其也可以变更为具有清洗干燥功能的机台以进行清洗干燥。
如图1、图3和图4所示，基板持取单元200设置在滑轨组900上，其可在滑轨组900上沿着移动方向U1滑动。基板持取单元200包括二悬臂210、二基板持取件220和一升降组件230。二悬臂210固定得连接升降组件230，于此实施例，两悬臂210为固定间距，固定式连接升降组件230。升降组件230可以沿着移动方向U2伸缩以带动二悬臂210上下移动。各基板持取件220分别对称得设置于各悬臂210，且二基板持取件220之间的槽位间距G小于基板W的基板直径R。二基板持取件220用以垂直持取基板W。各基板持取件220包括一沟槽221，各沟槽221可以为弧形或三角形槽体。于一实施例，各沟槽221包括一底部间距T和一顶部间距S，底部间距T小于顶部间距S，且二沟槽221对称设置以分别接触欲持取的基板W的两边。借由底部间距T小于顶部间距S的尺寸关系，以及二基板持取件220之间的槽位间距G小于基板W的基板直径R的尺寸关系，二基板持取件220可受到二悬臂210带动上升，以持取基板W离开基板支撑件10，或是二基板持取件220可受到二悬臂210带动下降，以将基板W置于基板支撑件10并离开基板W。于另一实施例，借由二基板持取件220之间的二沟槽221形状间距，二沟槽221为上宽下窄的形状关系；也就是说，二基板持取件220的二沟槽221的上端之间的槽位间距G1，比二沟槽221的下端之间的槽位间距G更宽。二基板持取件220可受到二悬臂210带动上升，以持取基板W离开基板支撑件10，或是二基板持取件220可受到二悬臂210带动下降，以将基板W置于基板支撑件10并离开基板W。然而，须注意的是，二基板持取件220仅为托住基板W，并非夹持基板W，以免基板W被夹损；另外，升降组件230的管体伸缩以达成位移效果的原理，已被广泛应用于各种机械设施中，且其并非本发明的重点，故不多做赘述。
如图1所示，控制单元400例如为计算机主机，其用以控制基板处理系统1的各个组件活动，以进行各个基板W的工艺。清洗干燥槽500具有喷液口以及吹风口，可用以清洗基板支撑件10d上平放的基板W并吹出热风以使基板W干燥。然而，基板支撑件10d也可以设计为托住直立的基板W，如此一来，清洗干燥槽500也可以清洁直立的基板W的两面。
如图1至图3所示，第一基板翻转机600为固定设置于一平面。第一基板翻转机600是旋转臂，其可带动基板支撑件10旋转成水平或直立；借此，第一基板翻转机600可将基板支撑件10上的基板W翻转于水平与直立状态之间，以便与基板持取单元200交接直立的基板W。第二基板翻转机700设置邻近清洗干燥槽500的基板支撑件10d。第二基板翻转机700是旋转臂，其可带动基板支撑件10c旋转成水平或直立；借此，第二基板翻转机700可将基板支撑件10c上的基板W翻转于水平与直立状态之间，以便与基板持取单元200交接直立的基板W，或是将水平的基板W放置在清洗干燥槽500内的基板支撑件10d上。基板输出入单元800例如为双向输送机构，其用以将各单片基板W沿着输出入方向V从基板处理组100输出和输入。基板输出入单元800包括一移动件810、一承接板820和一基板输出入单元轨道830。移动件810枢接承接板820并且可沿着基板输出入单元轨道830滑动；移动件810是由具有伸缩功能的结构所组成，因此可以在垂直基板输出入单元轨道830的方向上延伸，以使承接板820接近第一基板翻转机600。承接板820用以承接基板W，并且可以受移动件810带动而一起沿着基板输出入单元轨道830滑动。
当使用者欲应用本发明的基板处理系统1处理基板W时，如图1和图2所示，首先，用户可以操作控制单元400，控制基板输出入单元800输入水平状态的基板W，并借由滑动件810的移动和延伸，以及承接板820承接基板W的功能，而传输至第一基板翻转机600，其中第一基板翻转机600的控制主体12接收基板W且让容置单元11扣住基板W的周缘；借此，水平状态的基板W便传输至第一基板翻转机600，且被基板支撑件10稳固得承接，如此一来即可以准备将基板W运输至浸泡槽20以进行湿式处理。
在将水平状态的基板W运输至浸泡槽20之前，如图1至图3所示，第一基板翻转机600的旋转臂会先从平放状态旋转至直立状态，并且带动平放的基板支撑件10及承接的基板W一起直立，并控制四个容置单元11张开、不再扣住基板W的周缘，使得基板W后续可以顺利离开基板支撑件10。接着，控制单元400会控制基板持取单元200移动至基板处理组100旁边，以准备使基板持取单元200持取基板支撑件10承接的基板W。
如图1、图3、图5和图6所示，当基板持取单元200持取基板支撑件10承接的基板W时，首先，控制单元400会控制升降组件230沿着移动方向U2收缩以带动二基板持取件220下降至低于第一高度；本实施例的第一高度是指基板W的基板圆心C的高度，但第一高度可以变更为小于直立的基板W的基板圆心C的高度，并且由于基板W的形状不限于圆形，其亦可为方形、椭圆形等形状，因此第一高度的定义不以基板圆心C的高度为限，第一高度可以变更为小于或等于直立的基板W的顶点的一半高度。接着，控制单元400会控制基板持取单元200在滑轨组900上朝着基板W水平滑动，使得二基板持取件220向基板W水平移动至二基板持取件220分别对准基板W的两边。接着，控制单元400会控制升降组件230沿着移动方向U2延伸以带动二基板持取件220上升至接触基板W的两边，此时，由于二基板持取件220之间的槽位间距G小于基板W的基板直径R，因此二基板持取件220会持取基板W。接着，如图1和图7所示，控制单元400会控制升降组件230继续沿着移动方向U2延伸以带动二基板持取件220持取基板W并上升，使得基板W离开基板支撑件10。然而，须注意的是，上述的基板持取单元200持取基板W的流程中的各动作，为各别时间点可观察到的动作情况，然而以上动作之间是否有其他动作、停顿时间或以上动作为连续时间动作，则可依照工艺需求而任意改变。须注意的是，由于二基板持取件220不一定会对准基板W的两侧以从左右两侧持取基板W，二基板持取件220也可以设计为捧着基板W的底部以持取基板W，因此二基板持取件220之间的槽位间距G可以对应得调整为更小的距离。
接着，如图1、图8和图9所示，控制单元400可控制基板持取单元200移动至靠近浸泡槽20的位置，并控制升降组件230沿着移动方向U2延伸，使得二基板持取件220移动至基板支撑件10a的上方，以准备将基板W放置在基板支撑件10a之上并进行浸泡处理。接着，控制单元400会控制升降组件230沿着移动方向U2收缩，让二基板持取件220持取着基板W并下降，将基板W置于基板支撑件10a并且让基板W的两侧分别位于两个槽位21里。接着，控制单元400会控制升降组件230沿着移动方向U2持续收缩，让二基板持取件220继续下降至低于第一高度，并离开基板W。接着，控制单元400会控制基板持取单元200在滑轨组900滑动一第一距离D，以带动二基板持取件220水平移动第一距离D，使得二基板持取件220远离基板W。接着，控制单元400会控制升降组件230沿着移动方向U2延伸，带动二基板持取件220上升以离开基板处理组100的基板支撑件10a。如此一来，基板W便可放置在浸泡槽20内的基板支撑件10a以进行浸泡处理。若是需要对基板W进行振动浸泡处理，则控制单元400也可以控制振动装置22带动基板支撑件10a持续振动，如此一来，二基板持取件220可将基板W置于振动中的基板支撑件10a并离开基板W，让基板W进行振动浸泡处理。待浸泡处理完成后，二基板持取件220可上升持取基板W离开振动中的基板支撑件10a，以继续接下来的工艺。
如图1和图10所示，在二基板持取件220持取基板W离开浸泡槽20和基板支撑件10a之后，控制单元400控制基板持取单元200于浸泡槽20及单片式喷洗处理槽30之间交接基板W，将基板W自浸泡槽20移送至单片式喷洗处理槽30内的基板支撑件10b，以对基板W进行喷洗处理，例，药液喷洗或纯水喷洗等，不以此为限。须注意的是，由于基板持取单元200将基板W从基板支撑件10a取起并交接至基板支撑件10b所执行的动作，和基板持取单元200将基板W从直立的基板支撑件10取起并交接至基板支撑件10a所执行的动作相同，因此不须对基板持取单元200将基板W从基板支撑件10a取起并交接至基板支撑件10b所执行的动作再做赘述。
待喷洗处理完成后，二基板持取件220可上升持取基板W离开基板支撑件10b，以继续接下来的清洗干燥工艺。控制单元400会控制基板持取单元200将基板W自单片式喷洗处理槽30的基板支撑件10b抬起，以准备移送至清洗干燥槽500。由于清洗干燥槽500是水平式的清洗机台，因此基板持取单元200需要先将基板W自单片式喷洗处理槽30交接至第二基板翻转机700和基板支撑件10c，让第二基板翻转机700和基板支撑件10c将基板W翻转为水平状态，再让第二基板翻转机700和基板支撑件10c将水平状态的基板W置于清洗干燥槽500的基板支撑件10d之上，以进行水平清洗干燥。须注意的是，由于第二基板翻转机700及基板支撑件10c的机构组合，和第一基板翻转机600及基板支撑件10的机构组合几乎一样，且持取和翻转基板W的动作和原理也一样，故本领域的通常知识者应可根据先前所述的第一基板翻转机600及基板支撑件10持取并翻转基板W的描述，而理解第二基板翻转机700及基板支撑件10c持取并翻转基板W的动作细节，因此不须对第二基板翻转机700及基板支撑件10c持取并翻转基板W的动作多做赘述。
在基板W完成水平清洗干燥的工艺后，控制单元400会控制基板输出入单元800接收水平状态的基板W并输出至外部，如此一来即可完成基板W的湿式处理。须注意的是，第一实施例虽然是以一次处理一片基板W的湿式处理为例来描述基板处理系统1执行湿式处理过程，但是基板处理系统1执行湿式处理过程事实上也可以应用于一次处理多个基板W的湿式处理，控制单元400可以控制基板持取单元200于浸泡槽20、单片式喷洗处理槽30、清洗干燥槽500和基板输出入单元800之间陆续交接各个基板W，将各个基板W自该浸泡槽20依序移送至单片式喷洗处理槽30、清洗干燥槽500和基板输出入单元800，以对各个基板W进行完整的湿式处理。
以下请一并参考图11关于本发明的第二实施例的基板处理系统。图11为本发明的第二实施例的基板处理系统的示意图。
如图11所示，第二实施例与第一实施例的差别在于，在第二实施例中，基板处理系统1a不包括清洗干燥槽500，且基板处理系统1a更包括一水平单片式喷洗处理槽300；水平单片式喷洗处理槽300以对基板W进行喷洗处理，例，药液喷洗或纯水喷洗等，不以此为限。基板处理组100a为一浸泡槽20及多个基板支撑件10、10a、10c、10e，基板处理组100a不包括单片式喷洗处理槽30。基板支撑件10e位于水平单片式喷洗处理槽300内，其可容置平放的单片基板W。在基板W的湿式处理流程中，基板持取单元200会配合第一基板翻转机600和基板支撑件10，将基板W翻转为直立状态并交接至基板处理组100a的浸泡槽20以执行浸泡处理。浸泡处理完成的基板W会自浸泡槽20移送至第二基板翻转机700和基板支撑件10c以翻转为水平状态，再放置于水平单片式喷洗处理槽300内的基板支撑件10e以进行喷洗处理。
以下请一并参考图12关于本发明的第三实施例的基板处理系统。图12为本发明的第三实施例的基板处理系统的示意图。
如图12所示，第三实施例与第一实施例的差别在于，在第三实施例中，基板处理系统1b的基板处理组100b为一单片式喷洗处理槽30及多个基板支撑件10、10b、10c、10d，基板处理组100b不包括浸泡槽20。在基板W的湿式处理流程中，基板持取单元200会配合第一基板翻转机600和基板支撑件10，将基板W翻转为直立状态并交接至基板处理组100b的单片式喷洗处理槽30以执行喷洗处理。喷洗处理完成的基板W自单片式喷洗处理槽30移送至第二基板翻转机700和基板支撑件10c以翻转为水平状态，再放置到清洗干燥槽500内的基板支撑件10d以进行清洗和干燥处理。最后，控制单元400会控制基板输出入单元800接收水平状态的基板W并输出至外部。
以下请一并参考图13关于本发明的第四实施例的基板处理系统。图13为本发明的第四实施例的基板处理系统的示意图。
如图13所示，第四实施例与第一实施例的差别在于，在第四实施例的基板处理系统1c中，基板处理系统1c不包括清洗干燥槽500和第二基板翻转机700。基板处理组100c仅包括一基板支撑件10，且基板支撑件10设置于第一基板翻转机600上。基板处理组100c用以将基板翻转于水平与直立状态之间，并与基板持取单元200交接直立状态的基板。使用者可以依照基板的制作需求，而在滑轨组900附近摆设处理基板所需的工艺机台，借此，基板处理组100c和基板持取单元200可以根据不同的工艺机台而将基板翻转于水平与直立状态之间，并将翻转后的基板至于该工艺机台。
借由本发明的基板处理系统的结构设计，可以轻松得将基板直立状态持取及放置的交接，以及将基板转换为平放或直立状态之间，以配合不同的机台进行浸泡、震动浸泡、水平或垂直喷洗、清洗干燥等工艺。
本发明所提及的基板可为基板形式、载板形式、晶圆形式、芯片形式等，并且可为圆型、方型，并不以此为限。并且借由本发明的基板处理系统可应用于基板湿工艺(蚀刻、清洗、干燥等)，例：单基板湿工艺、多基板湿工艺、单一方芯片锡球下金属蚀刻、薄化晶圆支撑/剥离、贴合/剥离工艺、碳化硅再生晶圆、再生硅晶圆等，并不以此为限。
需注意的是，上述仅为实施例，而非限制于实施例。譬如此不脱离本发明基本架构者，皆应为本专利所主张的权利范围，而应以专利申请范围为准。

Claims (20)

1.一种基板处理系统，其特征在于，包括：
一基板处理组，包括至少一基板支撑件，该至少一基板支撑件用以支撑直立的一基板；以及
一基板持取单元，包括二悬臂和二基板持取件，各该基板持取件分别设置于各该悬臂，该二基板持取件用以垂直持取该基板；
其中当该基板持取单元移动至该基板处理组，且该二基板持取件与该基板接触后，该二基板持取件持取该基板；
其中该基板持取单元持取该基板的步骤包括：
该二基板持取件下降至低于该基板的一第一高度；
该二基板持取件向该基板水平移动至该二基板持取件分别对准该基板的两边；
该二基板持取件上升至接触该基板的两边；以及
该二基板持取件上升并持取该基板，使得该基板离开该至少一基板支撑件。
2.如权利要求1所述的基板处理系统，其特征在于，该基板持取单元更用以持取该基板，并将该基板置于该基板处理组；该基板持取单元持取该基板，并将该基板置于该基板处理组的步骤包括：
该二基板持取件持取该基板并下降，将该基板置于该基板支撑件；
该二基板持取件下降至低于该第一高度，并离开该基板；
该二基板持取件水平移动一第一距离以远离该基板；以及
该二基板持取件上升以离开该基板处理组。
3.如权利要求2所述的基板处理系统，其特征在于，各该基板持取件包括一沟槽，各该沟槽包括一底部间距和一顶部间距，该底部间距小于该顶部间距，且该二沟槽对称设置以分别接触该基板的该两边；其中借由该底部间距小于该顶部间距的尺寸关系，该二基板持取件可上升持取该基板离开该至少一基板支撑件，或是该二基板持取件可下降将该基板置于该至少一基板支撑件并离开该基板。
4.如权利要求2所述的基板处理系统，其特征在于，各该基板持取件包括一沟槽，该二沟槽对称设置以分别接触该基板的该两边；该二沟槽的上端之间的一槽位间距，比该二沟槽的下端之间的另一槽位间距更宽；其中借由该二沟槽为上宽下窄的形状关系，该二基板持取件可上升持取该基板离开该至少一基板支撑件，或是该二基板持取件可下降将该基板置于该至少一基板支撑件并离开该基板。
5.如权利要求2所述的基板处理系统，其特征在于，该基板处理组为一基板翻转机，用以将该基板翻转于水平与直立状态之间，并与该基板持取单元交接直立状态的该基板。
6.如权利要求5所述的基板处理系统，其特征在于，该至少一基板支撑件包括至少一容置单元；当该基板翻转于水平与直立状态之间时，该基板的周缘限位于该至少一容置单元内；当该基板于直立状态时，该基板直立于该至少一容置单元，以供该基板持取单元交接该基板。
7.如权利要求2所述的基板处理系统，其特征在于，该基板处理组为一单片式喷洗处理槽，用以对该基板进行垂直喷洗处理，并与该基板持取单元交接直立状态的该基板。
8.如权利要求2所述的基板处理系统，其特征在于，该基板处理组为一浸泡槽，用以对该基板进行垂直浸泡处理，并与该基板持取单元交接直立状态的该基板。
9.如权利要求8所述的基板处理系统，其中该浸泡槽包括多个槽位，该多个槽位设置于该至少一基板支撑件上，以容纳多个基板；该基板持取单元将该多个基板依序单片垂直放置于该多个槽位，以对该多个基板进行批次式的浸泡处理。
10.如权利要求8所述的基板处理系统，其特征在于，该浸泡槽包括多个槽位，该多个槽位设置于该至少一基板支撑件上，以容纳多个基板；该基板持取单元将其中一基板垂直放置于其中一槽位，以对该其中一基板进行浸泡处理，且该基板持取单元与该浸泡槽陆续交接其他基板，以陆续对各个基板进行浸泡处理。
11.如权利要求10所述的基板处理系统，其特征在于，在该基板持取单元与该浸泡槽陆续交接各个基板以进行浸泡处理的过程中，位于该浸泡槽内的该基板仍持续进行浸泡处理。
12.如权利要求8所述的基板处理系统，其特征在于，更包括一水平单片式喷洗处理槽，将该基板自该浸泡槽移送至该水平单片式喷洗处理槽以进行喷洗处理。
13.如权利要求8、9和10中的任一项所述的基板处理系统，其特征在于，该浸泡槽更包括一振动装置，该振动装置带动该至少一基板支撑件振动，以对该基板进行振动浸泡处理。
14.如权利要求13所述的基板处理系统，其特征在于，该二基板持取件可上升持取该基板离开振动中的该至少一基板支撑件，或是可下降将该基板置于振动中的该至少一基板支撑件并离开该基板。
15.如权利要求9或10所述的基板处理系统，其特征在于，该多个槽位之间至少间隔该第一距离，以供该基板持取单元升降进出该浸泡槽。
16.如权利要求2所述的基板处理系统，其特征在于，更包括一控制单元，用以控制各个基板的湿式处理；该基板处理组更包括一浸泡槽以及一单片式喷洗处理槽；该至少一基板支撑件的数量为多个，且其中二个基板支撑件分别设置于该浸泡槽以及该单片式喷洗处理槽；该浸泡槽包括可容纳多个基板的多个槽位，且该多个槽位设置于该浸泡槽内的该基板支撑件上；其中该控制单元控制该基板持取单元与该浸泡槽交接该各个基板，以对该各个基板进行浸泡处理；其中该控制单元控制该基板持取单元于该浸泡槽及该单片式喷洗处理槽的间交接该各个基板，将该各个基板自该浸泡槽移送至该单片式喷洗处理槽，以对该各个基板进行喷洗处理。
17.如权利要求16所述的基板处理系统，其特征在于，更包括一清洗干燥槽；该控制单元控制该基板持取单元将该各个基板自该单片式喷洗处理槽移送至该清洗干燥槽，以对该各个基板进行清洗干燥。
18.如权利要求17所述的基板处理系统，其特征在于，更包括一第一基板翻转机，其中一基板支撑件设置于该第一基板翻转机上，该第一基板翻转机将该基板翻转为直立状态，以与该基板持取单元交接该基板；该控制单元控制该基板持取单元将该基板自该第一基板翻转机移送至该浸泡槽，以对该基板进行浸泡处理。
19.如权利要求18所述的基板处理系统，其特征在于，更包括一第二基板翻转机，其中一基板支撑件设置于该第二基板翻转机；该控制单元控制该基板持取单元将该基板自该单片式喷洗处理槽移送至该清洗干燥槽，以对该基板进行清洗干燥的步骤包括：
该基板持取单元将该基板自该单片式喷洗处理槽交接至该第二基板翻转机；
该第二基板翻转机将该基板翻转为水平状态；以及
该第二基板翻转机将该基板置入该清洗干燥槽进行水平清洗干燥。
20.如权利要求19所述的基板处理系统，其特征在于，更包括一基板输出入单元，该多个基板经由该基板输出入单元输出入该基板处理系统；其中该控制单元控制该基板输出入单元，将水平状态的该基板传输至该第一基板翻转机以开始该基板的湿式处理；该控制单元也控制该基板输出入单元，从该清洗干燥槽接收水平状态的该基板，以完成该基板的湿式处理。
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