JP2023514968A - 基板のspm加工 - Google Patents
基板のspm加工 Download PDFInfo
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- JP2023514968A JP2023514968A JP2022544273A JP2022544273A JP2023514968A JP 2023514968 A JP2023514968 A JP 2023514968A JP 2022544273 A JP2022544273 A JP 2022544273A JP 2022544273 A JP2022544273 A JP 2022544273A JP 2023514968 A JP2023514968 A JP 2023514968A
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- 239000000758 substrate Substances 0.000 title claims abstract description 266
- 238000012545 processing Methods 0.000 title claims description 18
- 238000004140 cleaning Methods 0.000 claims abstract description 109
- 239000007788 liquid Substances 0.000 claims abstract description 29
- 230000032258 transport Effects 0.000 claims abstract description 25
- 238000005498 polishing Methods 0.000 claims description 38
- 238000012546 transfer Methods 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 18
- 239000012530 fluid Substances 0.000 claims description 16
- 239000000126 substance Substances 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 7
- 239000007921 spray Substances 0.000 claims description 5
- 150000002978 peroxides Chemical class 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 10
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 7
- 239000002245 particle Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 229910000420 cerium oxide Inorganic materials 0.000 description 5
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 5
- 238000007517 polishing process Methods 0.000 description 5
- 239000002002 slurry Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 230000003749 cleanliness Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 239000003517 fume Substances 0.000 description 2
- 239000006259 organic additive Substances 0.000 description 2
- 230000003134 recirculating effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 239000012487 rinsing solution Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
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- H01L21/67011—Apparatus for manufacture or treatment
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- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B08B1/30—Cleaning by methods involving the use of tools by movement of cleaning members over a surface
- B08B1/32—Cleaning by methods involving the use of tools by movement of cleaning members over a surface using rotary cleaning members
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/14—Removing waste, e.g. labels, from cleaning liquid; Regenerating cleaning liquids
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
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- B08B7/04—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by a combination of operations
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
- B65G47/00—Article or material-handling devices associated with conveyors; Methods employing such devices
- B65G47/74—Feeding, transfer, or discharging devices of particular kinds or types
- B65G47/90—Devices for picking-up and depositing articles or materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67751—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
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- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
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Abstract
Description
Claims (25)
- 複数の基板から微粒子を除去する基板洗浄システムであって、
基板に洗浄液を適用するための第1の容器であって、前記第1の容器の上部にある少なくとも2つの開閉可能なアクセスポートと、前記第1の容器内で前記基板のそれぞれのエッジにおいて前記基板を保持する複数の支持体とを更に含む、第1の容器と、
基板にリンス液を適用するための第2の容器であって、前記第2の容器内で前記基板のそれぞれのエッジにおいて前記基板を保持する複数の支持体を含む、第2の容器と、
基板を前記第1の容器の上部にある前記少なくとも2つの開閉可能なアクセスポートを通して輸送し、基板を前記第2の容器の上部を通して輸送するためのロボットシステムと
を備える、システム。 - 前記第2の容器は、上部と、前記第2の容器の上部にある前記少なくとも2つの開閉可能なアクセスポートとを有する、又は前記第2の容器は、開いた上部を有する、請求項1に記載のシステム。
- 前記第1の容器は、前記第1の容器内に載置された基板を輸送するための前記第1の容器内のコンベヤを更に含む、請求項1に記載のシステム。
- 前記第1の容器の支持体よりも、前記第1の容器のアクセスポートの数の方が多い、請求項3に記載のシステム。
- 前記少なくとも2つの開閉可能なアクセスポートは入口ポートと出口ポートとから構成され、前記支持体は一連の位置に配置され、前記入口ポートは前記一連の最初の位置の上に位置し、前記出口ポートは前記一連の最後の位置の上に位置する、請求項3に記載のシステム。
- 前記第1の容器のコンベヤは、前記支持体から少なくとも1つの基板を保持して前記少なくとも1つの基板を支持体間でシフトさせるための少なくとも1つのグリッパを有するウォーキングビームを含む、請求項3に記載のシステム。
- 前記コンベヤは、前記支持体が固定されるベルトと、前記ベルトを駆動する駆動ローラとを含む、請求項3に記載のシステム。
- 同数のアクセスポート及び支持体があり、各アクセスポートは対応する支持体の上方に位置決めされる、請求項1に記載のシステム。
- 前記支持体は、前記第1の容器の固定された横方向位置に支持される、請求項8に記載のシステム。
- 装置は、前記第1の容器の上部にある前記少なくとも2つの開閉可能なアクセスポート、及び前記第2の容器の上部にある前記少なくとも2つの開閉可能なアクセスポートのうちの第2のアクセスポートを通して基板を輸送するためのロボットアームを更に備える、請求項1に記載のシステム。
- 前記第2の容器の上部にある前記少なくとも2つの開閉可能なアクセスポートのうちの第1のアクセスポートを通して前記基板を輸送するための第1のロボットアームと、前記第2の容器の上部にある前記少なくとも2つの開閉可能なアクセスポートのうちの第2のアクセスポートを通して基板を輸送するための第2のロボットアームとを更に備える、請求項1に記載のシステム。
- 前記第1の容器は、前記洗浄液の槽を保持するタンクを含み、前記ロボットシステムは、前記基板を前記槽内に下降させるように構成される、請求項1に記載のシステム。
- 前記第2の容器は、前記リンス液の槽を保持するタンクを含み、前記ロボットシステムは、前記基板を前記槽内に下降させるように構成される、請求項1に記載のシステム。
- 前記第1の容器の前記少なくとも2つの開閉可能なアクセスポートは、2から20個の開閉可能なアクセスポートを含む、請求項1に記載のシステム。
- 研磨後の基板を処理するための洗浄システムであって、
SPM(sulfuric peroxide mix)モジュールであって、
SPM液を保持する第1の容器と、前記第1の容器の液中に5から20枚の基板を保持する5から20個の第1の支持体とを有するSPMクリーナと、
リンス液を保持する第2の容器と、前記第2の容器の液中に5から20枚の基板を保持する5から20個の第2の支持体とを有するリンスステーションと
を含む、SPMモジュールと、
メガソニッククリーナ、回転ブラシクリーナ、バフパッドクリーナ、ジェットスプレークリーナ、ケミカルスピンクリーナ、スピンドライヤ、及びマランゴニドライヤから構成される群から選択された少なくとも2つの洗浄要素であって、各々が一度に一つの基板を処理するように構成された、少なくとも2つの洗浄要素と、
基板を前記第1の容器の上部にある前記少なくとも2つのポートのうちの第1のポートを通して前記第1の容器の支持体上へ輸送し、前記基板を前記第1の容器の上部にある前記少なくとも2つのポートのうちの第1又は第2のポートを通して前記第1の容器から取り出し、前記基板を前記第2の容器の上部を通して前記第2の容器の支持体上へ輸送し、前記基板を前記第2の容器から取り出し、前記基板を前記少なくとも2つの洗浄要素のうちの第1の洗浄要素へ輸送し、前記基板を前記少なくとも2つの洗浄要素のうちの第2の洗浄要素へ輸送するように構成された複数のロボットと
を備えるシステム。 - 基板投入ステーションと、前記複数のロボットに、前記基板を前記投入ステーションから前記SPMモジュールへ、前記SPMモジュールから前記少なくとも2つの洗浄要素のうちの前記第1の洗浄要素へ、及び前記少なくとも2つの洗浄要素のうちの前記第1の洗浄要素から前記少なくとも2つの洗浄要素のうちの前記第2の洗浄要素へ輸送させるように構成されたコントローラとを備える、請求項15に記載のシステム。
- 基板投入ステーションと、前記複数のロボットに、前記基板を前記投入ステーションから前記少なくとも2つの洗浄要素のうちの前記第1の洗浄要素へ輸送させ、前記基板を前記少なくとも2つの洗浄要素のうちの前記第1の洗浄要素から前記SPMモジュールへ、及び前記SPMモジュールから前記少なくとも2つの洗浄要素のうちの前記第2の洗浄要素へ輸送させるように構成されたコントローラとを備える、請求項15に記載のシステム。
- 前記複数のロボットは、第1の軸に沿って移動可能なアームを有する第1のロボットを含む、請求項15に記載のシステム。
- 前記SPMモジュール、前記少なくとも2つの洗浄要素のうちの前記第1の洗浄要素、及び前記少なくとも2つの洗浄要素のうちの前記第2の洗浄要素は、前記第1の軸に沿って上述の順序で配置される、請求項18に記載のシステム。
- 前記少なくとも2つの洗浄要素のうちの前記第1の洗浄要素、前記SPMモジュール、及び前記少なくとも2つの洗浄要素のうちの前記第2の洗浄要素は、前記第1の軸に沿って上述の順序で配置される、請求項18に記載のシステム。
- 前記SPMクリーナ及び前記リンスステーションは、前記第1の軸に垂直な第2の軸に沿って並んで配置される、請求項18に記載のシステム。
- 前記複数のロボットは、前記基板を前記SPMクリーナから前記リンスステーションへ輸送する第2のロボットを含む、請求項21に記載のシステム。
- 前記複数のロボットは、前記基板を投入ステーションから前記SPMモジュールへ輸送する第3のロボットを含む、請求項22に記載のシステム。
- 複数の基板から微粒子を除去するための方法であって、
洗浄液槽を保持する第1の容器の上部にある複数の開閉可能なアクセスポートのうちの第1のアクセスポートを開くことと、
第1の基板を前記第1のアクセスポートを通して挿入し、前記第1の基板を前記洗浄液槽の複数の支持体のうちの1つの支持体上に送達することと、
前記第1のアクセスポートを閉じることと、
前記第1の容器の上部にある前記複数の開閉可能なアクセスポートのうちの第2のアクセスポートを開くことと、
第2の基板を前記第2のアクセスポートを通して挿入し、前記基板を前記洗浄液槽の前記複数の支持体のうちの第2の支持体上に送達することと、
前記第2のアクセスポートを閉じることと、
前記第1の容器の上部にある前記第1のアクセスポートを開くことと、
前記第1の基板を前記第1のアクセスポートを通して取り出し、前記第1の基板をリンスステーション内に送達することと、
前記第1のアクセスポートを閉じることと、
前記第1の容器の上部にある前記第2のアクセスポートを開くことと、
前記第2の基板を前記第2のアクセスポートを通して取り出し、前記第2の基板をリンスステーション内に送達することと、
前記第2のアクセスポートを閉じることと
を含む方法。 - 複数の基板から微粒子を除去するための方法であって、
洗浄液槽を保持する第1の容器の上部にある複数の開閉可能なアクセスポートのうちの第1のアクセスポートを開くことと、
第1の基板を前記第1のアクセスポートを通して挿入し、前記第1の基板を前記洗浄液槽の第1の位置上に送達することと、
前記第1のアクセスポートを閉じることと、
前記第1の基板を前記洗浄液槽の前記第1の位置から第2の位置へ移送することと、
前記第1の容器の上部にある前記複数の開閉可能なアクセスポートのうちの第2のアクセスポートを開くことと、
前記第1の基板を前記第2のアクセスポートを通して取り出し、前記第1の基板をリンスステーション内に送達することと、
前記第2のアクセスポートを閉じることと
を含む方法。
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