TW201801222A - 多重晶圓旋轉處理 - Google Patents

多重晶圓旋轉處理 Download PDF

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TW201801222A
TW201801222A TW106105533A TW106105533A TW201801222A TW 201801222 A TW201801222 A TW 201801222A TW 106105533 A TW106105533 A TW 106105533A TW 106105533 A TW106105533 A TW 106105533A TW 201801222 A TW201801222 A TW 201801222A
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wafer
processor
rotor
processing
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約翰Ｌ 克羅克
凱爾Ｍ 漢森
喬瑟夫Ａ 強納生
史都華 克蘭
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應用材料股份有限公司
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Abstract

晶圓處理器具有處於處理儲槽內的轉子固定晶圓。轉子旋轉，從而順序地將晶圓移動通過處理儲槽中保存的處理液體。儲槽可以具有工字梁形，以便減小處理液體體積。裝料埠提供在處理儲槽頂部處，以將晶圓裝卸進出處理儲槽。沖洗和清潔腔室可與裝料埠相關聯，以將處理液體從處理過的晶圓上去除。處理器可取向為使得轉子圍繞水準軸線或圍繞豎直軸線來旋轉。

Description

多重晶圓旋轉處理
本申請涉及了用於處理半導體材料晶圓的處理器、系統和方法，以及用於微電子元件的類似的工件或基板。
微電子元件（諸如半導體元件）通常製造在半導體材料晶圓上和/或在半導體材料晶圓中。經由光蝕刻法在晶圓表面上形成圖案化層。經由化學剝離去除在光蝕刻法步驟中使用的光阻劑。這可能是相對耗時的處理，對於具有較厚的光阻劑層的晶圓或無法利用可用處理液體（諸如溶劑）來快速去除的硬化的光阻劑來說尤其如此。
為了加速製造處理，常常成批次處理晶圓，通常是多個晶圓在固定在托盤、匣盒，匣或類似固定裝置中時進行處理。雖然成批次處理可以高產量或處理速率操作，但是由於晶圓不均勻地暴露於處理液體下，因此可能難以一致地實現期望的結果。例如，在批次中間的晶圓可不直接暴露於處理液體噴料下。另一方面，單個晶圓處理在很大程度上實現均勻處理，但是相較成批次處理來說產量速度較低。
因此，在提供用於處理晶圓的系統和方法上（尤其是相對於更耗時的處理步驟來說）仍存在著工程挑戰。
晶圓處理器具有處於處理儲槽內的轉子固定晶圓。轉子旋轉，從而順序地將晶圓移動通過處理儲槽中保存的處理液體。儲槽可以具有工字梁形，以便減小所需要處理的處理液體體積。裝料埠提供在處理儲槽頂部處，以將晶圓裝卸進出處理儲槽。沖洗和清潔腔室可與裝料埠相關聯，以將處理液體從處理過的晶圓上去除。轉子可取向為圍繞基本上水準的軸線或圍繞基本上豎直的軸線來旋轉。
如圖1所示，處理系統20具有在罩殼22內的第一晶圓處理器28和第二晶圓處理器28。罩殼22可具有進出開口24和26以允許工件（諸如半導體晶圓）移動（通常是經由機械手移動）進出處理系統20。進出開口24和26可以具有封閉物，諸如可移動的面板或視窗，用於在處理過程中封閉進出開口24和26，以更好地將蒸氣或氣體容納在罩殼22內。罩殼22還可設有空氣入口和排氣接頭，以使受控的空氣流能夠通過罩殼。
如圖1和圖2所示，每個處理器28具有用於將晶圓100裝載進出處理儲槽30的頭部50。根據所執行的特定處理，第二腔室48（諸如自旋沖洗乾燥器）可與罩殼內的每個處理器28相關聯。
現在轉到圖3和圖4，清潔殼體32設在處理儲槽30頂部。清潔殼體32（若使用的話）通常包括被下部或者說是清潔腔室排泄通道40環繞的清潔腔室34，以及被上部或者沖洗腔室排泄通道38環繞的沖洗腔室36。排泄通道38和40連接到設備的排泄口並視情況連接到真空源。處理儲槽還包括一個或多個液體入口和一個或多個液體出口，用於填充和排泄處理液體，或者使處理液體流能夠流過處理儲槽。
如圖4最佳所示，處理儲槽30具有寬至足以容納晶圓100的圈環區段70和窄得多中央卷材區段76。轉子56具有從中心輪轂62徑向向外延伸的多個臂部58，其中固定裝置60在每個臂部58外端處。馬達64連接到轉子56，以使轉子56在處理儲槽30中旋轉。圖4的實例中的處理儲槽30具有工字型剖面，以便允許在轉子56旋轉晶圓通過儲槽30時，轉子56上的晶圓100完全浸沒到處理液體中。圈環區段70具有外圓周壁72，外圓周壁會通常包住至少270度的弧。一個或多個液體噴嘴80和/或聲換能器82可以提供在外壁72上或外壁中。臂部58通常是平坦且狹窄的，以裝配在卷材區段76中的臂部空間或狹槽74內。
在使用中，處理液體（諸如溶劑）抽送到處理儲槽30中，使得處理儲槽30被填充至達到例如容量的50%至90%。固定晶圓100的頭部50下降到處於處理儲槽30的頂部的裝料埠54中。頭部50將晶圓100轉移到轉子56上的固定裝置60。固定裝置60接合晶圓100的背面和/或邊緣，其中晶圓100的正面或元件側面朝上。啟動馬達64以旋轉轉子56，從而沿圓形路徑將晶圓100移動通過圈環區段70中的處理液體。通過這種移動，後續固定裝置60移動到裝料埠54中，以便接收後續晶圓100。
處理液體可以從噴頭或噴嘴80射出或噴射，噴頭或噴嘴80可以浸沒在處理液體表面中或處理液體表面上方。噴嘴80可徑向向內指向以提供垂直於晶圓表面的液體射流。聲能可經由一個或多個聲換能器來引入到處理液體中。如圖4所示，噴嘴80和聲換能器82（若使用的話）可定位成非常靠近晶圓前側（例如，5 mm至25 mm，或者50 mm），以便增強處理。馬達64以允許晶圓100在足以完成晶圓的處理的時間間隔內（通常是1分鐘至30分鐘）保持浸沒在處理液體中的速率（對應於0.034 rpm至1 rpm的旋轉速率）旋轉轉子56。在轉子56繼續旋轉時，處理過的晶圓100返回裝料埠54，並且經由頭部50從處理儲槽中去除。後續晶圓100作類似的處理。
根據所使用的特定處理和處理液體，可以接著在沖洗腔室36中沖洗晶圓100，以將殘留處理液體去除。沖洗液體可從沖洗腔室36中的和/或頭部50上的沖洗噴嘴噴到晶圓上。通常，頭部50還旋轉晶圓100以沖走沖洗液體。在清潔殼體32內執行的任選第二步驟中，頭部可將晶圓100提升到清潔腔室34中，在清潔腔室中，晶圓被進一步清潔和/或乾燥。對於其中處理液體是溶劑的應用諸如光阻劑的剝離，晶圓100可以經由第二腔室48（諸如自旋沖洗乾燥器）被進一步清潔和乾燥。接著，將晶圓100移到罩殼22外，以進一步搬運或處理。
轉子56圍繞基本上水準的（即，在水準線的15度內）旋轉軸線66旋轉。在處理儲槽30內填充處理液體時，多個晶圓同時浸沒在處理液體中，從而在緊湊的空間中提供相對高的產率。然而，處理是均勻的，因為每個晶圓完全且同等地暴露於處理液體、以及液體射流還有聲能（若使用的話）下。
通常，在處理儲槽30中的處理液體的表面低於在裝料埠54下方對準的固定裝置的水平面，使得在頭部50與固定裝置60之間轉移晶圓的過程中，不使晶圓浸沒在處理儲槽30中的批量處理液體中或與批量處理液體接觸。如圖3中的虛線所示，第二裝料埠90可任選地提供在處理儲槽30上，以便允許在裝料埠54處執行所有裝載，並且在第二裝料埠90處執行所有卸載，反之亦然。
系統20和處理儲槽30的操作通常是經由電腦控制，以便提供更均勻的處理。除了在晶圓在裝料埠54處裝載到固定裝置60上或從其上移除時暫時暫停之外，馬達64可以緩慢且連續地旋轉轉子56。以此方式，晶圓通常連續移動通過任何噴嘴80或聲換能器82。或者，馬達64可間歇地操作，從而僅根據需要來以遞進的方式旋轉轉子，使得除了在用於晶圓轉移的暫態增量移動期間之外，晶圓在處理儲槽30內是靜止的。通常，轉子僅沿一個方向旋轉而不反轉，並且其中轉子至少在每個晶圓固定裝置移向處理儲槽中的裝料埠時暫停。裝料埠54可以具有裝料埠蓋門（load port door），裝料埠蓋門可從第一位置移向第二位置，在第一位置中，裝料埠蓋門關閉並且密封裝料埠，在第二位置中，裝料埠打開。
在所示實例中，轉子56具有六個臂部58，它們等距間隔開來並從輪轂62徑向向外延伸。在其他設計中，轉子可以具有3、4、5、7、8、9或10個臂部。在緊湊設計中，外壁72周長和臂部長度是取決於晶圓100的直徑。在針對300 mm直徑晶圓來示出的實例中，外壁72可以具有約1000 mm的直徑。晶圓直徑與外壁72內徑的比率可以在0.1或0.2至約0.35的範圍內。圈環區段70具有的寬度WW和高度HH足以容納晶圓100和固定裝置60並有足夠餘隙，並相對於卷材區段76中的臂部空間74的體積來最大化圈環區段70的體積，而且減少使用的處理液體的總體體積。圈環區段的寬度WW可為卷材區段的臂部狹槽的寬度的2-20倍。
雖然圖3和圖4中的轉子56被示出為具有徑向臂部，但是可以使用其他形式轉子，包括具有在托盤或圈環上而非臂部上的固定裝置的轉子，或者呈圓形或多邊形柱體或鼓形形式的轉子。轉子也可提供作為從外部驅動的環形圈環，其中省略中心輪轂和臂部。類似地，轉子可完全地經由儲槽中的圓形軌道替換，其中各個固定裝置經由推動機構推進。
一種用於處理晶圓的方法包括：利用處理液體來至少部分地填充處理儲槽；將第一晶圓裝載到第一固定裝置上；使第一固定裝置沿豎直圓形路徑移動通過處理儲槽；將第一固定裝置浸沒到處理液體中；且類似地，將第二晶圓裝載到第二固定裝置上；使第二固定裝置沿豎直圓形路徑移動，從而跟隨第一固定裝置；以及將第二固定裝置浸沒到處理液體中。使第一晶圓和第二晶圓在足以完成所述處理步驟的處理時間間隔內（例如，1-60分鐘）保持浸沒在處理液體中。豎直圓形路徑是呈圍繞基本上水準的軸線的圓形的路徑。當然，可以使用類圓形的路徑（諸如橢圓形或卵圓形的路徑）或者多邊形的路徑而不使用圓形路徑。
圖5示出了可替代的頭部120，其類似於頭部50並且具有用於將晶圓100固定在晶圓固定位置處（大體在140處示出，通常是在頭部120的頭部板材124下方幾釐米處）的指部122。頭部120上的頭部馬達126旋轉頭部板材124。沖洗臂部128從附接到頭部120的框架的沖洗輪轂130延伸出，沖洗輪轂並不旋轉。沖洗臂部128上的沖洗噴嘴132指向晶圓固定位置。在使用中，在晶圓固定在晶圓固定位置處時，沖洗液體抽送通過沖洗輪轂130和沖洗臂部128到達沖洗噴嘴，以便沖洗晶圓100的面向上的正面。
在使用處理氣體或蒸氣代替處理液體的情況下，可以選擇處理儲槽30的取向以更好地滿足其他設計因素，諸如高度限制、管道連接等等。如圖6所示，處理儲槽30中的轉子可以圍繞基本上豎直的軸線旋轉，而非圍繞如圖1-4中的基本上水準的軸線旋轉，因為重力方向對氣相或蒸氣相處理的影響很小或無影響。轉子還可以任選地圍繞介於豎直和水準之間的軸線旋轉。
描述的方法和設備對於耗時處理步驟來說尤其有用，因為它們允許同時處理多個晶圓，同時還實現了單個晶圓處理的益處。然而，本方法和設備同樣可以其他方式使用。在此所使用的晶圓統稱矽或其他半導體材料晶圓，以及其上形成微尺度元件的其他基板。
20‧‧‧處理系統
22‧‧‧罩殼
24‧‧‧進出開口
26‧‧‧進出開口
28‧‧‧處理器
30‧‧‧處理儲槽
32‧‧‧清潔殼體
34‧‧‧清潔腔室
36‧‧‧沖洗腔室
38‧‧‧排泄通道
40‧‧‧排泄通道
48‧‧‧第二腔室
50‧‧‧頭部
54‧‧‧裝料埠
56‧‧‧轉子
58‧‧‧臂部
60‧‧‧固定裝置
62‧‧‧輪轂
64‧‧‧馬達
70‧‧‧圈環區段
72‧‧‧外壁
74‧‧‧臂部空間
76‧‧‧卷材區段
80‧‧‧噴嘴
82‧‧‧聲換能器
90‧‧‧第二裝料埠
100‧‧‧晶圓
120‧‧‧頭部
122‧‧‧指部
124‧‧‧頭部板材
126‧‧‧頭部馬達
128‧‧‧沖洗臂部
130‧‧‧沖洗輪轂
132‧‧‧沖洗噴嘴
WW‧‧‧寬度
HH‧‧‧高度
圖1是處理系統的透視圖。
圖2是圖1所示系統的側視圖。
圖3是圖1和圖2所示系統的儲槽的透視圖。
圖4是沿圖3的線4-4截得的截面圖。
圖5是圖1和圖2所示頭部的透視圖。
圖6是替代實施方式的側視圖。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無
(請換頁單獨記載) 無
30‧‧‧處理儲槽
32‧‧‧清潔殼體
54‧‧‧裝料埠
58‧‧‧臂部
60‧‧‧固定裝置
64‧‧‧馬達
90‧‧‧第二裝料埠
100‧‧‧晶圓

Claims (13)

  1. 一種晶圓處理器，該晶圓處理器包括： 一處理儲槽；一轉子，該轉子在該處理儲槽中；多個晶圓固定裝置，該晶圓固定裝置在該轉子上；以及一馬達，該馬達用於旋轉該轉子以使該晶圓固定裝置穿過該處理儲槽。
  2. 如請求項1所述的處理器，其中該馬達使得該轉子僅沿一第一方向旋轉，其中該轉子在每個晶圓固定裝置移向該處理儲槽中的一裝料埠時暫停。
  3. 如請求項1所述的處理器，其中該處理儲槽具有一圈環區段和一卷材區段，其中該圈環區段所具有的一寬度為臂部狹槽寬度的2-20倍。
  4. 如請求項1所述的處理器，其中該處理儲槽具有一圈環區段和一卷材區段，並且該轉子具有多個徑向臂部，其中每個徑向臂部從一中心輪轂延伸穿過該卷材區段到一晶圓固定裝置。
  5. 如請求項1所述的處理器，其中該轉子能夠圍繞基本上水準的軸線旋轉。
  6. 如請求項1所述的處理器，其中該轉子能夠圍繞基本上豎直的軸線旋轉。
  7. 如請求項1所述的處理器，其進一步包括處於該處理儲槽的一頂部的一裝料埠，以及處於該裝料埠處的一清潔殼體，其中該清潔殼體具有在一上部腔室周圍的一上部排泄管環並且具有在處於該上部腔室下的一下部腔室周圍的一下部排泄管環。
  8. 如請求項1所述的處理器，其中該處理儲槽具有一工字型剖面。
  9. 如請求項4所述的處理器，其中該圈環區段具有一外圓周壁，該外圓周壁包住至少270度的一弧。
  10. 如請求項9所述的處理器，其進一步包括處於該外圓周壁上的至少一個噴塗噴嘴，該噴塗噴嘴適於徑向向內朝固定在該晶圓固定裝置中的一個中的一晶圓噴射液體。
  11. 如請求項9所述的處理器，其進一步包括處於該處理儲槽中的至少一個聲換能器。
  12. 如請求項7所述的處理器，其進一步包括一頭部，該頭部用於固定一晶圓，其中該頭部可豎直地移動到該上部腔室中和移動到該下部腔室中。
  13. 如請求項12所述的處理器，其中該頭部包括：指部，該指部用於固定一晶圓處於一晶圓固定位置；以及一個或多個沖洗噴嘴，該沖洗噴嘴指向該晶圓固定位置。
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