CN107170695A - 多个晶片旋转处理 - Google Patents

多个晶片旋转处理 Download PDF

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CN107170695A
CN107170695A CN201710134346.4A CN201710134346A CN107170695A CN 107170695 A CN107170695 A CN 107170695A CN 201710134346 A CN201710134346 A CN 201710134346A CN 107170695 A CN107170695 A CN 107170695A
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processor
storage tank
rotor
wafer
technique storage
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约翰·L·洛克
凯尔·M·汉森
约瑟夫·A·乔纳森
斯图尔特·克兰
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Applied Materials Inc
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    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
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    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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Abstract

晶片处理器具有处于工艺储槽内的转子，转子固定晶片。转子旋转，从而顺序地将晶片移动通过工艺储槽中保存的处理液体。储槽可以具有工字梁形，以便减小处理液体体积。装料端口提供在工艺储槽顶部处，以将晶片装卸进出工艺储槽。冲洗和清洁腔室可与装料端口相关联，以将处理液体从处理过的晶片上去除。处理器可取向为使得转子围绕水平轴线或围绕竖直轴线来旋转。

Description

多个晶片旋转处理
技术领域
本申请涉及了用于处理半导体材料晶片的处理器、系统和方法，以及用于微电子器件的类似的工件或基板。
背景技术
微电子器件(诸如半导体器件)通常制造在半导体材料晶片上和/或在半导体材料晶片中。通过光刻在晶片表面上形成图案化层。通过化学剥离去除在光刻步骤中使用的光刻胶。这可能是相对耗时的工艺，对于具有较厚的光刻胶层的晶片或无法利用可用处理液体(诸如溶剂)来快速去除的硬化的光刻胶来说尤其如此。
为了加速制造工艺，常常成批处理晶片，通常是多个晶片在固定在托盘、匣盒或类似固定装置中时进行处理。虽然成批处理可以高产量或处理速率操作，但是由于晶片不均匀地暴露于处理液体下，因此可能难以一致地实现期望的结果。例如，在批次中间的晶片可不直接暴露于处理液体喷料下。另一方面，单个晶片处理在很大程度上实现均匀处理，但是相较成批处理来说产量速度较低。
因此，在提供用于处理晶片的系统和方法上(尤其是相对于更耗时的工艺步骤来说)仍存在着工程挑战。
发明内容
晶片处理器具有处于工艺储槽内的转子，转子固定晶片。转子旋转，从而顺序地将晶片移动通过工艺储槽中保存的处理液体。储槽可以具有工字梁形，以便减小所需要处理的处理液体体积。装料端口提供在工艺储槽顶部处，以将晶片装卸进出工艺储槽。冲洗和清洁腔室可与装料端口相关联，以将处理液体从处理过的晶片上去除。转子可取向为围绕基本上水平的轴线或围绕基本上竖直的轴线来旋转。
附图说明
在附图中：
图1是处理系统的透视图。
图2是图1所示系统的侧视图。
图3是图1和图2所示系统的储槽的透视图。
图4是沿图3的线4-4截得的截面图。
图5是图1和图2所示头部的透视图。
图6是替代实施方式的侧视图。
具体实施方式
如图1所示，处理系统20具有在罩壳22内的第一晶片处理28和第二晶片处理器28。罩壳22可具有进出开口24和26以允许工件(诸如半导体晶片)移动(通常是通过机械手移动)进出处理系统20。进出开口24和26可以具有封闭物，诸如可移动的面板或窗口，用于在处理过程中封闭进出开口24和26，以更好地将蒸气或气体容纳在罩壳22内。罩壳22还可设有空气入口和排气接头，以使受控的空气流能够通过罩壳。
如图1和图2所示，每个处理器28具有用于将晶片100装载进出工艺储槽30的头部50。根据所执行的特定工艺，第二腔室48(诸如自旋冲洗干燥器)可与罩壳内的每个处理器28相关联。
现在转到图3和图4，清洁壳体32设在工艺储槽30顶部。清洁壳体32(如果使用的话)通常包括被下部或者说是清洁腔室排泄通道40环绕的清洁腔室34，以及被上部或者说是冲洗腔室排泄通道38环绕的冲洗腔室36。排泄通道38和40连接到设备的排泄口并视情况连接到真空源。工艺储槽还包括一个或多个液体入口和一个或多个液体出口，用于填充和排泄处理液体，或者使处理液体流能够流过工艺储槽。
如图4最佳所示，工艺储槽30具有宽至足以容纳晶片100的圈环区段70和窄得多的中央卷材区段76。转子56具有从中心轮毂62径向向外延伸的多个臂部58，其中固定装置60在每个臂部58外端处。马达64连接到转子56，以使转子56在工艺储槽30中旋转。图4的实例中的工艺储槽30具有工字型剖面，以便允许在转子56旋转晶片通过储槽30时，转子56上的晶片100完全浸没到处理液体中。圈环区段70具有外圆周壁72，外圆周壁会通常包住至少270度的弧。一个或多个液体喷嘴80和/或声换能器82可以提供在外壁72上或外壁中。臂部58通常是平坦且狭窄的，以装配在卷材区段76中的臂部空间或狭槽74内。
在使用中，处理液体(诸如溶剂)抽送到工艺储槽30中，使得工艺储槽30被填充至达到例如容量的50％至90％。固定晶片100的头部50下降到处于工艺储槽30的顶部的装料端口54中。头部50将晶片100转移到转子56上的固定装置60。固定装置60接合晶片100的背面和/或边缘，其中晶片100的正面或器件侧面朝上。启动马达64以旋转转子56，从而沿圆形路径将晶片100移动通过圈环区段70中的处理液体。通过这种移动，后续固定装置60移动到装料端口54中，以便接收后续晶片100。
处理液体可以从喷头或喷嘴80射出或喷射，喷嘴或喷嘴80可以浸没在处理液体表面中或处理液体表面上方。喷嘴80可径向向内指向以提供垂直于晶片表面的液体射流。声能可通过一个或多个声换能器来引入到处理液体中。如图4所示，喷嘴80和声换能器82(如果使用的话)可定位成非常靠近晶片前侧(例如，5mm至25mm，或者50mm)，以便增强处理。马达64以允许晶片100在足以完成晶片的处理的时间间隔内(通常是1分钟至30分钟)保持浸没在处理液体中的速率(对应于0.034rpm至1rpm的旋转速率)旋转转子56。在转子56继续旋转时，处理过的晶片100返回装料端口54，并且通过头部50从工艺储槽中去除。后续晶片100作类似的处理。
根据所使用的特定工艺和处理液体，可以接着在冲洗腔室36中冲洗晶片100，以将残留处理液体去除。冲洗液体可从冲洗腔室36中的和/或头部50上的冲洗喷嘴喷到晶片上。通常，头部50还旋转晶片100以冲走冲洗液体。在清洁壳体32内执行的任选第二步骤中，头部可将晶片100提升到清洁腔室34中，在清洁腔室中，晶片被进一步清洁和/或干燥。对于其中处理液体是溶剂的应用诸如光刻胶的剥离，晶片100可以通过第二腔室48(诸如自旋冲洗干燥器)被进一步清洁和干燥。接着，将晶片100移到罩壳22外，以进一步搬运或处理。
转子56围绕基本上水平的(即，在水平线的15度内)旋转轴线66旋转。在工艺储槽30内填充处理液体时，多个晶片同时浸没在处理液体中，从而在紧凑的空间中提供相对高的产率。然而，处理是均匀的，因为每个晶片完全且同等地暴露于处理液体、以及液体射流还有声能(如果使用的话)下。
通常，在工艺储槽30中的处理液体的表面低于在装料端口54下方对准的固定装置的水平面，使得在头部50与固定装置60之间转移晶片的过程中，不使晶片浸没在工艺储槽30中的批量处理液体中或与批量处理液体接触。如图3中的虚线所示，第二装料端口90可任选地提供在工艺储槽30上，以便允许在装料端口54处执行所有装载，并且在第二装料端口90处执行所有卸载，反之亦然。
系统20和工艺储槽30的操作通常是通过计算机控制，以便提供更均匀的处理。除了在晶片在装料端口54处装载到固定装置60上或从其上移除时暂时暂停之外，马达64可以缓慢且连续地旋转转子56。以此方式，晶片通常连续移动通过任何喷嘴80或声换能器82。或者，马达64可间歇地操作，从而仅根据需要来以递进的方式旋转转子，使得除了在用于晶片转移的瞬时增量移动期间之外，晶片在工艺储槽30内是静止的。通常，转子仅沿一个方向旋转而不反转，并且其中转子至少在每个晶片固定装置移向工艺储槽中的装料端口时暂停。装料端口54可以具有装料端口盖门(load port door)，装料端口盖门可从第一位置移向第二位置，在第一位置中，装料端口盖门关闭并且密封装料端口，在第二位置中，装料端口打开。
在所示实例中，转子56具有六个臂部58，它们等距间隔开来并从轮毂62径向向外延伸。在其他设计中，转子可以具有3、4、5、7、8、9或10个臂部。在紧凑设计中，外壁72周长和臂部长度是取决于晶片100的直径。在针对300mm直径晶片来示出的实例中，外壁72可以具有约1000mm的直径。晶片直径与外壁72内径的比率可以在0.1或0.2至约0.35的范围内。圈环区段70具有的宽度WW和高度HH足以容纳晶片100和固定装置60并有足够余隙，并相对于卷材区段76中的臂部空间74的体积来最大化圈环区段70的体积，而且减少使用的处理液体的总体体积。圈环区段的宽度WW可为卷材区段的臂部狭槽的宽度的2-20倍。
虽然图3和图4中的转子56被示出为具有径向臂部，但是可以使用其他形式转子，包括具有在托盘或圈环上而非臂部上的固定装置的转子，或者呈圆形或多边形柱体或鼓形形式的转子。转子也可提供作为从外部驱动的环形圈环，其中省略中心轮毂和臂部。类似地，转子可完全地通过储槽中的圆形轨道替换，其中各个固定装置通过推动机构推进。
一种用于处理晶片的方法包括：利用处理液体来至少部分地填充工艺储槽；将第一晶片装载到第一固定装置上；使第一固定装置沿竖直圆形路径移动通过工艺储槽；将第一固定装置浸没到处理液体中；且类似地，将第二晶片装载到第二固定装置上；使第二固定装置沿竖直圆形路径移动，从而跟随第一固定装置；以及将第二固定装置浸没到处理液体中。使第一晶片和第二晶片在足以完成所述处理步骤的处理时间间隔内(例如，1-60分钟)保持浸没在处理液体中。竖直圆形路径是呈围绕基本上水平的轴线的圆形的路径。当然，可以使用类圆形的路径(诸如椭圆形或卵圆形的路径)或者多边形的路径而不使用圆形路径。
图5示出了可替代的头部120，其类似于头部50并且具有用于将晶片100固定在晶片固定位置处(大体在140处示出，通常是在头部120的头部板124下方几厘米处)的指部122。头部120上的头部马达126旋转头部板124。冲洗臂部128从附接到头部120的框架的冲洗轮毂130延伸出，冲洗轮毂并不旋转。冲洗臂部128上的冲洗喷嘴132指向晶片固定位置。在使用中，在晶片固定在晶片固定位置处时，冲洗液体抽送通过冲洗轮毂130和冲洗臂部128到达冲洗喷嘴，以便冲洗晶片100的面向上的正面。
在使用处理气体或蒸气代替处理液体的情况下，可以选择工艺储槽30的取向以更好地满足其他设计因素，诸如高度限制、管道连接等等。如图6所示，工艺储槽30中的转子可以围绕基本上竖直的轴线旋转，而非围绕如图1-4中的基本上水平的轴线旋转，因为重力方向对气相或蒸气相处理的影响很小或无影响。转子还可以任选地围绕介于竖直和水平之间的轴线旋转。
描述的方法和设备对于耗时工艺步骤来说尤其有用，因为它们允许同时处理多个晶片，同时还实现了单个晶片处理的益处。然而，本方法和设备同样可以其他方式使用。在此所使用的晶片统称硅或其他半导体材料晶片，以及其上形成微尺度器件的其他基板。

Claims (13)

1.一种晶片处理器，所述晶片处理器包括：
工艺储槽；
转子，所述转子在所述工艺储槽中；
多个晶片固定装置，所述晶片固定装置在所述转子上；以及
马达，所述马达用于旋转所述转子以使所述晶片固定装置穿过所述工艺储槽。
2.如权利要求1所述的处理器，其中所述马达使得所述转子仅沿第一方向旋转，其中所述转子在每个晶片固定装置移向所述工艺储槽中的装料端口时暂停。
3.如权利要求1所述的处理器，其中所述工艺储槽具有圈环区段和卷材区段，其中所述圈环区段所具有的宽度为臂部狭槽宽度的2-20倍。
4.如权利要求1所述的处理器，其中所述工艺储槽具有圈环区段和卷材区段，并且所述转子具有多个径向臂部，其中每个径向臂部从中心轮毂延伸穿过所述卷材区段到晶片固定装置。
5.如权利要求1所述的处理器，其中所述转子能够围绕基本上水平的轴线旋转。
6.如权利要求1所述的处理器，其中所述转子能够围绕基本上竖直的轴线旋转。
7.如权利要求1所述的处理器，其进一步包括处于所述工艺储槽的顶部的装料端口，以及处于所述装料端口处的清洁壳体，其中所述清洁壳体具有在上部腔室周围的上部排泄管环并且具有在处于所述上部腔室下的下部腔室周围的下部排泄管环。
8.如权利要求1所述的处理器，其中所述工艺储槽具有工字型剖面。
9.如权利要求4所述的处理器，其中所述圈环区段具有外圆周壁，所述外圆周壁包住至少270度的弧。
10.如权利要求9所述的处理器，其进一步包括处于所述外圆周壁上的至少一个喷涂喷嘴，所述喷涂喷嘴适于径向向内朝固定在所述晶片固定装置中的一个中的晶片喷射液体。
11.如权利要求9所述的处理器，其进一步包括处于所述工艺储槽中的至少一个声换能器。
12.如权利要求7所述的处理器，其进一步包括头部，所述头部用于固定晶片，其中所述头部可竖直地移动到所述上部腔室中和移动到所述下部腔室中。
13.如权利要求12所述的处理器，其中所述头部包括：指部，所述指部用于固定晶片处于晶片固定位置；以及一个或多个冲洗喷嘴，所述冲洗喷嘴指向所述晶片固定位置。
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