TW202009901A - Display device - Google Patents

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TW202009901A
TW202009901A TW108103331A TW108103331A TW202009901A TW 202009901 A TW202009901 A TW 202009901A TW 108103331 A TW108103331 A TW 108103331A TW 108103331 A TW108103331 A TW 108103331A TW 202009901 A TW202009901 A TW 202009901A
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driving element
pixel electrode
display device
sub
storage capacitor
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TW108103331A
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Chinese (zh)
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TWI689908B (en
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紀佑旻
蘇松宇
劉品妙
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友達光電股份有限公司
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Abstract

A display device including sub-pixels is provided. In each sub-pixel, gate electrodes of a first and a second driving elements are respectively electrically connected to a first and a second control lines, a drain electrode of the first driving element is electrically connected to a source electrode of the second driving element, a first storage capacitor and a display medium capacitor, and a drain electrode of the second driving element is electrically connected to a second storage capacitor. Under a first mode, the first driving element is in on and off states respectively during a first scanning period and a first holding period, and the second driving element is always in an off state. Under a second mode, the first driving element is in on and off states respectively during a second scanning period and a second holding period, and the second driving element is always in an on state.

Description

顯示裝置Display device

本發明是有關於一種顯示裝置,且特別是有關於一種可切換模式的顯示裝置。The present invention relates to a display device, and particularly to a display device with switchable mode.

手機及平板電腦等可攜式顯示裝置的功耗(power consumption)會影響到使用時間的長短。因此,若能降低顯示裝置的功耗,便可延長顯示裝置的使用時間,並達到節能的效果。顯示裝置操作在低頻時,可具有較低的功耗,但需要夠大的儲存電容來抑制漏電效應對顯示品質所造成的負面影響,例如因漏電造成顯示畫面漸暗或閃爍(flicker)等現象。惟隨著顯示裝置的解析度的提升,畫素的面積變小,其儲存電容也相對小,導致穿通(feed through)電壓變大、串音(crosstalk)現象產生,甚至漏電效應的惡化。鑑於上述,如何增大儲存電容並抑制漏電效應,便成為目前研發重點之一。The power consumption of portable display devices such as mobile phones and tablet computers will affect the length of use. Therefore, if the power consumption of the display device can be reduced, the use time of the display device can be extended, and the effect of energy saving can be achieved. When the display device operates at a low frequency, it can have lower power consumption, but it needs a large storage capacitor to suppress the negative effect of leakage effects on the display quality, such as the phenomenon of fading or flicker of the display screen due to leakage . However, as the resolution of the display device increases, the area of the pixels becomes smaller, and the storage capacitance thereof is relatively small, resulting in a larger feed-through voltage, crosstalk, and even worsening of the leakage effect. In view of the above, how to increase the storage capacitance and suppress the leakage effect has become one of the current research and development priorities.

本發明提供一種顯示裝置,其可增大儲存電容並抑制漏電效應。The invention provides a display device which can increase the storage capacitance and suppress the leakage effect.

本發明的一實施例的一種顯示裝置包括多個子畫素。每一個子畫素包括第一控制線、第二控制線、第一驅動元件、第二驅動元件、第一儲存電容、顯示介質電容以及第二儲存電容。第一驅動元件的閘極電性連接第一控制線。第一驅動元件的汲極電性連接第二驅動元件的源極、第一儲存電容以及顯示介質電容。第二驅動元件的閘極電性連接第二控制線。第二驅動元件的汲極電性連接第二儲存電容。在第一模式下,第一驅動元件在第一掃描時間段處於開啟狀態且在第一維持時間段處於關閉狀態,且第二驅動元件在第一掃描時間段以及第一維持時間段處於關閉狀態。在第二模式下,第一驅動元件在第二掃描時間段處於開啟狀態且在第二維持時間段處於關閉狀態,且第二驅動元件在第二掃描時間段以及第二維持時間段處於開啟狀態。A display device according to an embodiment of the invention includes multiple sub-pixels. Each sub-pixel includes a first control line, a second control line, a first driving element, a second driving element, a first storage capacitor, a display medium capacitor, and a second storage capacitor. The gate of the first driving element is electrically connected to the first control line. The drain of the first driving element is electrically connected to the source of the second driving element, the first storage capacitor, and the display medium capacitor. The gate of the second driving element is electrically connected to the second control line. The drain of the second driving element is electrically connected to the second storage capacitor. In the first mode, the first driving element is turned on during the first scanning period and is off during the first maintenance period, and the second driving element is turned off during the first scanning period and the first maintenance period . In the second mode, the first driving element is on during the second scanning period and off during the second sustaining period, and the second driving element is on during the second scanning period and the second maintaining period .

基於上述,在本發明的實施例中,顯示裝置可在多個模式(包括第一模式與第二模式)之間做切換。在第一模式下,第二驅動元件持續處於關閉狀態,使子畫素具有較小的儲存電容,從而有助於改善充電率問題。在第二模式下,第二驅動元件持續處於開啟狀態,使子畫素具有較大的儲存電容,從而能有效抑制漏電效應對於顯示品質的負面影響。Based on the above, in an embodiment of the present invention, the display device can switch between multiple modes (including the first mode and the second mode). In the first mode, the second driving element is continuously turned off, so that the sub-pixel has a smaller storage capacitance, thereby helping to improve the charging rate problem. In the second mode, the second driving element is continuously turned on, so that the sub-pixel has a larger storage capacitance, which can effectively suppress the negative effect of the leakage effect on the display quality.

為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more obvious and understandable, the embodiments are specifically described below in conjunction with the accompanying drawings for detailed description as follows.

實施方式中所提到的方向用語,例如:「上」、「下」、「前」、「後」、「左」、「右」等,僅是參考附圖的方向。因此,使用的方向用語是用來說明,而並非用來限制本發明。在附圖中,各圖式繪示的是特定示範實施例中所使用的方法、結構及/或材料的通常性特徵。然而,這些圖式不應被解釋為界定或限制由這些示範實施例所涵蓋的範圍或性質。舉例來說,為了清楚起見,各膜層、區域及/或結構的相對厚度及位置可能縮小或放大。Directional terms mentioned in the embodiments, for example, "upper", "lower", "front", "rear", "left", "right", etc., are only directions referring to the drawings. Therefore, the directional terms used are for illustration, not for limiting the present invention. In the drawings, each drawing depicts general features of methods, structures, and/or materials used in particular exemplary embodiments. However, these drawings should not be construed as defining or limiting the scope or nature covered by these exemplary embodiments. For example, for the sake of clarity, the relative thickness and position of each film layer, region, and/or structure may be reduced or enlarged.

在實施方式中,相同或相似的元件將採用相同或相似的標號,且將省略其贅述。此外,不同示範實施例中的特徵在沒有衝突的情況下可相互組合,且依本說明書或申請專利範圍所作之簡單的等效變化與修飾,皆仍屬本專利涵蓋之範圍內。另外,本說明書或申請專利範圍中提及的「第一」、「第二」等用語僅用以命名分立(discrete)的元件或區別不同實施例或範圍,而並非用來限制元件數量上的上限或下限,也並非用以限定元件的製造順序或設置順序。In the embodiments, the same or similar elements will use the same or similar reference numerals, and redundant descriptions thereof will be omitted. In addition, the features in the different exemplary embodiments can be combined with each other without conflict, and simple equivalent changes and modifications made in accordance with this specification or the scope of the patent application are still covered by this patent. In addition, the terms "first" and "second" mentioned in this specification or patent application are only used to name discrete components or distinguish different embodiments or ranges, not to limit the number of components. The upper limit or the lower limit is not intended to limit the manufacturing order or setting order of the components.

在本發明的實施例中,顯示裝置具有多個模式(包括第一模式與第二模式),且顯示裝置可在所述多個模式之間做切換。舉例來說,第一模式具有第一操作頻率,第二模式具有第二操作頻率,且顯示裝置可在所述多個操作頻率之間做切換。此處,操作頻率指的是顯示畫面的更新頻率。操作頻率為60赫茲(Hz)指的是顯示裝置每1/60秒更新一次顯示畫面。當第二操作頻率低於第一操作頻率時,第二模式稱作低頻模式,而第一模式稱作高頻模式。此處,低頻模式的實例可包括顯示畫面的更新頻率低於60赫茲,如1赫茲、24赫茲或其他赫茲。高頻模式的實例可包括顯示畫面的更新頻率為60赫茲以上,如60赫茲、120赫茲或其他赫茲。由於顯示裝置在第二模式下以較低的頻率更新顯示畫面,因此顯示裝置在第二模式下可具有較低的功耗,且較為節能。為方便說明,以下實施例以第一模式為高頻模式且第二模式為低頻模式進行說明,但顯示裝置的模式種類不以上述為限。In an embodiment of the present invention, the display device has multiple modes (including the first mode and the second mode), and the display device can switch between the multiple modes. For example, the first mode has a first operating frequency, the second mode has a second operating frequency, and the display device can switch between the multiple operating frequencies. Here, the operating frequency refers to the update frequency of the display screen. An operating frequency of 60 hertz (Hz) means that the display device updates the display screen every 1/60 second. When the second operating frequency is lower than the first operating frequency, the second mode is called a low-frequency mode, and the first mode is called a high-frequency mode. Here, an example of the low frequency mode may include that the update frequency of the display picture is lower than 60 Hz, such as 1 Hz, 24 Hz or other hertz. Examples of the high-frequency mode may include that the update frequency of the display image is above 60 Hz, such as 60 Hz, 120 Hz or other hertz. Since the display device updates the display screen at a lower frequency in the second mode, the display device can have lower power consumption and more energy-saving in the second mode. For convenience of description, the following embodiments are described with the first mode being a high-frequency mode and the second mode being a low-frequency mode, but the types of modes of the display device are not limited to the above.

圖1是本發明的實施例的顯示裝置的一個子畫素的等效電路圖。圖2A及圖2B分別是第一模式及第二模式的驅動波形圖。請參照圖1至圖2B,本發明的一實施例的顯示裝置1包括多個子畫素SP。每一個子畫素SP包括第一控制線CL1、第二控制線CL2、第一驅動元件T1、第二驅動元件T2、第一儲存電容C1、顯示介質電容Cm以及第二儲存電容C2。第一驅動元件T1的閘極G1電性連接第一控制線CL1。第一驅動元件T1的汲極D1電性連接第二驅動元件T2的源極S2、第一儲存電容C1以及顯示介質電容Cm。第二驅動元件T2的閘極G2電性連接第二控制線CL2。第二驅動元件T2的汲極D2電性連接第二儲存電容C2。FIG. 1 is an equivalent circuit diagram of one sub-pixel of the display device of the embodiment of the present invention. 2A and 2B are driving waveform diagrams of the first mode and the second mode, respectively. 1 to 2B, a display device 1 according to an embodiment of the present invention includes multiple sub-pixels SP. Each sub-pixel SP includes a first control line CL1, a second control line CL2, a first driving element T1, a second driving element T2, a first storage capacitor C1, a display medium capacitor Cm, and a second storage capacitor C2. The gate G1 of the first driving element T1 is electrically connected to the first control line CL1. The drain D1 of the first driving element T1 is electrically connected to the source S2 of the second driving element T2, the first storage capacitor C1, and the display medium capacitor Cm. The gate G2 of the second driving element T2 is electrically connected to the second control line CL2. The drain D2 of the second driving element T2 is electrically connected to the second storage capacitor C2.

每一個子畫素SP還可包括第三控制線CL3,且第一驅動元件T1的源極S1電性連接第三控制線CL3。第一控制線CL1以及第二控制線CL2例如為掃描線,且第三控制線CL3例如為資料線。Each sub-pixel SP may further include a third control line CL3, and the source S1 of the first driving element T1 is electrically connected to the third control line CL3. The first control line CL1 and the second control line CL2 are, for example, scan lines, and the third control line CL3 is, for example, a data line.

在第一模式下,第一驅動元件T1在第一掃描時間段SC1處於開啟狀態且在第一維持時間段H1處於關閉狀態,且第二驅動元件T2在第一掃描時間段SC1以及第一維持時間段H1處於關閉狀態。舉例來說,如圖2A的線條L1A所示,在第一掃描時間段SC1,經由圖1所示的第一控制線CL1向第一驅動元件T1的閘極G1送出正脈衝電壓(或高電位,VGH),以開啟第一驅動元件T1並對第一儲存電容C1以及顯示介質電容Cm進行充電。此外,在第一維持時間段H1,經由圖1所示的第一控制線CL1向第一驅動元件T1的閘極G1送出負電壓(或低電位,VGL),以關閉第一驅動元件T1。另一方面,如圖2A的線條L2A所示,在第一掃描時間段SC1以及第一維持時間段H1,經由圖1所示的第二控制線CL2向第二驅動元件T2的閘極G2送出負電壓,使第二驅動元件T2持續處於關閉狀態。也就是說,在第一模式下,不對第二儲存電容C2進行充電,且子畫素SP在第一模式下的儲存電容主要取決於第一儲存電容C1以及顯示介質電容Cm。In the first mode, the first driving element T1 is in the on state during the first scanning period SC1 and is off during the first sustaining period H1, and the second driving element T2 is in the first scanning period SC1 and the first maintaining The time period H1 is in the off state. For example, as shown by line L1A in FIG. 2A, during the first scan period SC1, a positive pulse voltage (or high potential) is sent to the gate G1 of the first driving element T1 via the first control line CL1 shown in FIG. , VGH) to turn on the first driving element T1 and charge the first storage capacitor C1 and the display medium capacitor Cm. In addition, in the first sustain period H1, a negative voltage (or low potential, VGL) is sent to the gate G1 of the first driving element T1 via the first control line CL1 shown in FIG. 1 to turn off the first driving element T1. On the other hand, as indicated by line L2A in FIG. 2A, in the first scan period SC1 and the first sustain period H1, it is sent out to the gate G2 of the second driving element T2 via the second control line CL2 shown in FIG. The negative voltage keeps the second driving element T2 in the off state. That is to say, in the first mode, the second storage capacitor C2 is not charged, and the storage capacitance of the sub-pixel SP in the first mode mainly depends on the first storage capacitor C1 and the display medium capacitor Cm.

在第二模式下,第一驅動元件T1在第二掃描時間段SC2處於開啟狀態且在第二維持時間段H2處於關閉狀態,且第二驅動元件T2在第二掃描時間段SC2以及第二維持時間段H2處於開啟狀態。舉例來說,如圖2B的線條L1B所示,在第二掃描時間段SC2,經由圖1所示的第一控制線CL1向第一驅動元件T1的閘極G1送出正脈衝電壓(或高電位,VGH),以開啟第一驅動元件T1並對第一儲存電容C1以及顯示介質電容Cm進行充電。此外,在第二維持時間段H2,經由圖1所示的第一控制線CL1向第一驅動元件T1的閘極G1送出負電壓(或低電位,VGL),以關閉第一驅動元件T1。另一方面,如圖2B的線條L2B所示,在第二掃描時間段SC2以及第二維持時間段H2,經由圖1所示的第二控制線CL2向第二驅動元件T2的閘極G2送出正電壓(或高電位,VGH),使第二驅動元件T2持續處於開啟狀態。也就是說,在第二模式下,對第二儲存電容C2持續充電,且子畫素SP在第二模式下的儲存電容除了取決於第一儲存電容C1以及顯示介質電容Cm之外,還取決於第二儲存電容C2。In the second mode, the first driving element T1 is turned on during the second scanning period SC2 and is off during the second sustaining period H2, and the second driving element T2 is during the second scanning period SC2 and the second sustaining The time period H2 is in the on state. For example, as shown by line L1B in FIG. 2B, during the second scan period SC2, a positive pulse voltage (or high potential) is sent to the gate G1 of the first driving element T1 via the first control line CL1 shown in FIG. , VGH) to turn on the first driving element T1 and charge the first storage capacitor C1 and the display medium capacitor Cm. In addition, in the second sustain period H2, a negative voltage (or low potential, VGL) is sent to the gate G1 of the first driving element T1 via the first control line CL1 shown in FIG. 1 to turn off the first driving element T1. On the other hand, as shown by line L2B of FIG. 2B, in the second scan period SC2 and the second sustain period H2, the second control line CL2 shown in FIG. 1 is sent to the gate G2 of the second driving element T2 The positive voltage (or high potential, VGH) keeps the second driving element T2 on. In other words, in the second mode, the second storage capacitor C2 is continuously charged, and the storage capacity of the sub-pixel SP in the second mode depends on the first storage capacitor C1 and the display medium capacitance Cm In the second storage capacitor C2.

根據上述,子畫素SP在第一模式下具有較小的儲存電容,且在第二模式下具有較大的儲存電容。在第一模式(高頻模式)下,小的儲存電容較容易充電,因此有助於改善高頻模式下充電時間不足的問題。另一方面,在第二模式(低頻模式)下,大的儲存電容較能穩定受到漏電效應影響的電位,因此可在節能的同時,有效抑制漏電效應對於顯示品質的負面影響。According to the above, the sub-pixel SP has a smaller storage capacitance in the first mode and a larger storage capacitance in the second mode. In the first mode (high-frequency mode), a small storage capacitor is easier to charge, so it helps to improve the problem of insufficient charging time in high-frequency mode. On the other hand, in the second mode (low-frequency mode), the large storage capacitor is more stable to the potential affected by the leakage effect, so it can effectively suppress the negative impact of the leakage effect on the display quality while saving energy.

接下來藉由多個實施例說明顯示裝置1的多種態樣,但顯示裝置1的可實施態樣不以下述為限。應說明的是,顯示裝置1通常包括主動元件陣列基板、對向基板以及位於主動元件陣列基板與對向基板之間的顯示介質層。以下的多個實施例主要針對顯示裝置的主動元件陣列基板的差異進行說明,顯示介質層以及對向基板可採用現有的顯示介質層以及對向基板,因此於下便不再贅述。另外,為方便說明,以下實施例以顯示裝置為邊際場切換式(Fringe Field Switching,FFS)顯示裝置進行說明,但顯示裝置的種類不以上述為限。In the following, various embodiments of the display device 1 will be described through a plurality of embodiments, but the implementable aspects of the display device 1 are not limited to the following. It should be noted that the display device 1 generally includes an active element array substrate, a counter substrate, and a display medium layer between the active element array substrate and the counter substrate. The following embodiments mainly describe the differences between the active device array substrates of the display device. The display medium layer and the counter substrate can use the existing display medium layer and the counter substrate, so they will not be repeated below. In addition, for convenience of description, the following embodiments use a display device as a fringe field switching (FFS) display device for description, but the type of display device is not limited to the above.

圖3A是本發明的實施例的顯示裝置的主動元件陣列基板的第一種態樣的局部上視示意圖。圖3B是圖3A中透光區以及非透光區的示意圖。在圖3B中,以粗虛線表示第二儲存電容C2所在的區域。圖3C是圖3A中剖線I-I’的剖面示意圖。請參照圖1、圖3A至圖3C,顯示裝置1的主動元件陣列基板10A可包括基板SUB以及多個絕緣層(如絕緣層IN1、絕緣層IN2、絕緣層IN3以及絕緣層IN4)。此外,第一控制線CL1、第二控制線CL2、第三控制線CL3、第一驅動元件T1、第二驅動元件T2、第一儲存電容C1、顯示介質電容Cm、第二儲存電容C2、絕緣層IN1、絕緣層IN2、絕緣層IN3以及絕緣層IN4設置在基板SUB上。3A is a partial schematic top view of a first aspect of an active device array substrate of a display device according to an embodiment of the invention. FIG. 3B is a schematic diagram of the light-transmitting area and the non-light-transmitting area in FIG. 3A. In FIG. 3B, the area where the second storage capacitor C2 is located is indicated by a thick broken line. 3C is a schematic cross-sectional view taken along line I-I' in FIG. 3A. Referring to FIGS. 1, 3A to 3C, the active device array substrate 10A of the display device 1 may include a substrate SUB and a plurality of insulating layers (such as insulating layer IN1, insulating layer IN2, insulating layer IN3, and insulating layer IN4). In addition, the first control line CL1, the second control line CL2, the third control line CL3, the first driving element T1, the second driving element T2, the first storage capacitor C1, the display dielectric capacitor Cm, the second storage capacitor C2, insulation The layer IN1, the insulating layer IN2, the insulating layer IN3, and the insulating layer IN4 are provided on the substrate SUB.

在本實施例中,第一控制線CL1、第二控制線CL2、第一驅動元件T1的閘極G1以及第二驅動元件T2的閘極G2設置在基板SUB上且同屬於第一圖案化導電層。藉由同一圖案化導電層的設計,可避免導電元件間因彼此堆疊(或導電元件跨越另一導電元件)而須增設絕緣層以及負載(loading)增加等問題。絕緣層IN1設置在第一圖案化導電層以及未被第一圖案化導電層覆蓋的基板SUB上。第一驅動元件T1的通道層CH1設置在絕緣層IN1上並與閘極G1重疊。第二驅動元件T2的通道層CH2也設置在絕緣層IN1上並與閘極G2重疊。通道層CH1以及通道層CH2例如由多晶矽(poly-Si)材料製作。源極S1以及汲極D1分別位於通道層CH1的相對兩側,且源極S2以及汲極D2分別位於通道層CH2的相對兩側。第三控制線CL3跨越第一控制線CL1以及第二控制線CL2,並透過絕緣層IN1而與第一控制線CL1以及第二控制線CL2電性絕緣。源極S1、汲極D1、源極S2、汲極D2以及第三控制線CL3同屬於第二圖案化導電層。絕緣層IN2、絕緣層IN3以及絕緣層IN4依序堆疊在基板SUB上。然而,主動元件陣列基板10A中的元件及/或膜層的相對設置關係、製作順序及/或材質等可依需求改變,而不以上述為限。In this embodiment, the first control line CL1, the second control line CL2, the gate G1 of the first driving element T1 and the gate G2 of the second driving element T2 are disposed on the substrate SUB and belong to the first patterned conductive Floor. The design of the same patterned conductive layer can avoid the problems of additional insulation layers and increased loading due to the stacking of the conductive elements (or the conductive elements crossing another conductive element). The insulating layer IN1 is disposed on the first patterned conductive layer and the substrate SUB not covered by the first patterned conductive layer. The channel layer CH1 of the first driving element T1 is provided on the insulating layer IN1 and overlaps with the gate G1. The channel layer CH2 of the second driving element T2 is also provided on the insulating layer IN1 and overlaps the gate G2. The channel layer CH1 and the channel layer CH2 are made of poly-Si material, for example. The source electrode S1 and the drain electrode D1 are located on opposite sides of the channel layer CH1, and the source electrode S2 and the drain electrode D2 are located on opposite sides of the channel layer CH2. The third control line CL3 crosses the first control line CL1 and the second control line CL2, and is electrically insulated from the first control line CL1 and the second control line CL2 through the insulating layer IN1. The source electrode S1, the drain electrode D1, the source electrode S2, the drain electrode D2, and the third control line CL3 all belong to the second patterned conductive layer. The insulating layer IN2, the insulating layer IN3, and the insulating layer IN4 are sequentially stacked on the substrate SUB. However, the relative arrangement relationship, manufacturing sequence, and/or material of the elements and/or film layers in the active element array substrate 10A may be changed according to requirements, and not limited to the above.

就邊際場切換式顯示裝置而言,每一個子畫素SP還包括第一畫素電極PE1、第二畫素電極PE2以及共用電極CE。第一畫素電極PE1具有多個開孔SL(開孔SL未繪示於圖3A,請參照圖3C),且第一畫素電極PE1通過貫孔TH1而與第一驅動元件T1的汲極D1電性連接。另一方面,第二畫素電極PE2通過貫孔TH2而與第二驅動元件T2的汲極D2電性連接。在本實施例中,第一畫素電極PE1以及第二畫素電極PE2設置在絕緣層IN4上且同屬於第三圖案化導電層。此外,如圖3A所示,第二畫素電極PE2與第一畫素電極PE1位於第一驅動元件T1以及第二驅動元件T2的同一側,且第一畫素電極PE1以及第二畫素電極PE2彼此不重疊。共用電極CE重疊於第一畫素電極PE1與第二畫素電極PE2,且共用電極CE例如位於絕緣層IN3以及絕緣層IN4之間。然而,上述多個元件及/或膜層的相對設置關係、製作順序及/或材質等可依需求改變,而不以上述為限。For the marginal field switching display device, each sub-pixel SP further includes a first pixel electrode PE1, a second pixel electrode PE2, and a common electrode CE. The first pixel electrode PE1 has a plurality of openings SL (the opening SL is not shown in FIG. 3A, please refer to FIG. 3C), and the first pixel electrode PE1 is connected to the drain of the first driving element T1 through the through hole TH1 D1 is electrically connected. On the other hand, the second pixel electrode PE2 is electrically connected to the drain electrode D2 of the second driving element T2 through the through hole TH2. In this embodiment, the first pixel electrode PE1 and the second pixel electrode PE2 are disposed on the insulating layer IN4 and belong to the third patterned conductive layer. In addition, as shown in FIG. 3A, the second pixel electrode PE2 and the first pixel electrode PE1 are located on the same side of the first driving element T1 and the second driving element T2, and the first pixel electrode PE1 and the second pixel electrode PE2 does not overlap with each other. The common electrode CE overlaps the first pixel electrode PE1 and the second pixel electrode PE2, and the common electrode CE is located between the insulating layer IN3 and the insulating layer IN4, for example. However, the relative arrangement relationship, manufacturing sequence, and/or material of the above-mentioned multiple elements and/or film layers can be changed according to requirements, and not limited to the above.

第一儲存電容C1的組成包括第一畫素電極PE1、共用電極CE以及位於第一畫素電極PE1與共用電極CE之間的絕緣層IN4。第二儲存電容C2的組成包括第二畫素電極PE2、共用電極CE以及位於第二畫素電極PE2與共用電極CE之間的絕緣層IN4。The composition of the first storage capacitor C1 includes a first pixel electrode PE1, a common electrode CE, and an insulating layer IN4 between the first pixel electrode PE1 and the common electrode CE. The composition of the second storage capacitor C2 includes a second pixel electrode PE2, a common electrode CE, and an insulating layer IN4 between the second pixel electrode PE2 and the common electrode CE.

每一個子畫素SP具有透光區A1以及非透光區A2。所述透光區A1以及非透光區A2可由顯示裝置1的對向基板中的裝飾層(未繪示)來定義。進一步來說,裝飾層適於遮蔽顯示裝置1中不欲被使用者看見的元件,其中被裝飾層遮蔽的區域(也就是與裝飾層重疊的區域)為非透光區A2,而未被裝飾層遮蔽的區域(也就是不與裝飾層重疊的區域)為透光區A1。在本實施例中,如圖3B所示,第一儲存電容C1的第一畫素電極PE1與透光區A1重疊,且第二儲存電容C2的第二畫素電極PE2與非透光區A2重疊。換句話說,本實施例的第二儲存電容C2是被裝飾層遮蔽的。在第二畫素電極PE2與第一畫素電極PE1同層的架構下,當第二驅動元件T2處於開啟狀態時(如第二模式),第二畫素電極PE2與共用電極CE之間的電場會影響液晶層(顯示介質層)中液晶分子的排列,從而影響顯示效果。因此,可藉由裝飾層遮蔽第二儲存電容C2所在的區域,來避免該區域被使用者瞧見。Each sub-pixel SP has a light-transmitting area A1 and a non-light-transmitting area A2. The light-transmitting area A1 and the non-light-transmitting area A2 can be defined by a decorative layer (not shown) in the counter substrate of the display device 1. Further, the decorative layer is suitable for shielding the components of the display device 1 that are not intended to be seen by the user, wherein the area covered by the decorative layer (that is, the area overlapping the decorative layer) is the non-light-transmitting area A2 without being decorated The area covered by the layer (that is, the area that does not overlap with the decorative layer) is the light-transmitting area A1. In this embodiment, as shown in FIG. 3B, the first pixel electrode PE1 of the first storage capacitor C1 overlaps the light-transmitting area A1, and the second pixel electrode PE2 of the second storage capacitor C2 and the non-light-transmitting area A2 overlapping. In other words, the second storage capacitor C2 of this embodiment is shielded by the decoration layer. In the same layer structure as the second pixel electrode PE2 and the first pixel electrode PE1, when the second driving element T2 is in an on state (as in the second mode), the second pixel electrode PE2 and the common electrode CE The electric field affects the arrangement of liquid crystal molecules in the liquid crystal layer (display medium layer), thereby affecting the display effect. Therefore, the area where the second storage capacitor C2 is located can be shielded by the decorative layer to prevent the area from being seen by the user.

圖4是本發明的實施例的顯示裝置的主動元件陣列基板的第二種態樣的局部上視示意圖。請參照圖4,主動元件陣列基板10B與圖3A的主動元件陣列基板10A的主要差異在於第一控制線CL1、第二控制線CL2、第一驅動元件T1以及第二驅動元件T2的相對設置關係及製作順序。舉例來說,主動元件陣列基板10B中的多個圖案化導電層的製作順序可依需求而有所不同。此外,在主動元件陣列基板10B中,第一控制線CL1以及第一驅動元件T1的閘極G1屬於一個圖案化導電層,而第二控制線CL2以及第二驅動元件T2的閘極G2屬於另一個圖案化導電層。此外,這兩個圖案化導電層可透過絕緣層(未繪示)而彼此電性絕緣。4 is a partial schematic top view of a second aspect of an active element array substrate of a display device according to an embodiment of the invention. Referring to FIG. 4, the main difference between the active device array substrate 10B and the active device array substrate 10A of FIG. 3A is the relative arrangement relationship of the first control line CL1, the second control line CL2, the first driving element T1, and the second driving element T2 And production sequence. For example, the manufacturing sequence of the plurality of patterned conductive layers in the active device array substrate 10B may be different according to requirements. In addition, in the active device array substrate 10B, the first control line CL1 and the gate G1 of the first driving element T1 belong to a patterned conductive layer, and the second control line CL2 and the gate G2 of the second driving element T2 belong to another A patterned conductive layer. In addition, the two patterned conductive layers can be electrically insulated from each other through an insulating layer (not shown).

圖5是本發明的實施例的顯示裝置的主動元件陣列基板的第三種態樣的局部上視示意圖。請參照圖5,主動元件陣列基板10C與圖3A的主動元件陣列基板10A的主要差異在於第一畫素電極PE1、第二畫素電極PE2以及共用電極CE的相對設置關係。舉例來說,本實施例的第二畫素電極PE2重疊於第一驅動元件T1以及第二驅動元件T2。在此架構下,與第一畫素電極PE1以及第二畫素電極PE2重疊的共用電極(未繪示,請參照圖3C)的面積會增大。此外,在改變第二畫素電極PE2的位置之後,第一畫素電極PE1可進一步占據圖3A中原本用來設置第二畫素電極PE2的區域,因此第一畫素電極PE1可具有較大的面積。對應地,圖3B中透光區A1的面積可增大(例如擴增至圖3B中第二儲存電容C2所在的區域),而非透光區A2的面積可縮小。因此,圖5中子畫素SP可具有較大的開口率。5 is a partial schematic top view of a third aspect of an active device array substrate of a display device according to an embodiment of the invention. Referring to FIG. 5, the main difference between the active element array substrate 10C and the active element array substrate 10A of FIG. 3A is the relative arrangement relationship of the first pixel electrode PE1, the second pixel electrode PE2, and the common electrode CE. For example, the second pixel electrode PE2 of this embodiment overlaps the first driving element T1 and the second driving element T2. Under this architecture, the area of the common electrode (not shown, please refer to FIG. 3C) overlapping with the first pixel electrode PE1 and the second pixel electrode PE2 will increase. In addition, after changing the position of the second pixel electrode PE2, the first pixel electrode PE1 may further occupy the area originally used to set the second pixel electrode PE2 in FIG. 3A, so the first pixel electrode PE1 may have a larger Area. Correspondingly, the area of the light-transmitting area A1 in FIG. 3B can be increased (eg, enlarged to the area where the second storage capacitor C2 in FIG. 3B is located), and the area of the non-light-transmitting area A2 can be reduced. Therefore, the neutron pixel SP in FIG. 5 may have a larger aperture ratio.

圖6A是本發明的實施例的顯示裝置的主動元件陣列基板的第四種態樣的局部上視示意圖。在圖6A中,以虛線表示被第一畫素電極PE1覆蓋的第二畫素電極PE2。圖6B是圖6A中剖線II-II’的剖面示意圖。請參照圖6A及圖6B,主動元件陣列基板10D與圖3A及圖3C的主動元件陣列基板10A的主要差異在於第一畫素電極PE1、第二畫素電極PE2以及共用電極CE的相對設置關係及各電極的面積。舉例來說,第一畫素電極PE1以及第二畫素電極PE2彼此重疊且分別位於共用電極CE的相對兩側。換句話說,第一畫素電極PE1與第二畫素電極PE2不屬於同一個圖案化導電層。6A is a schematic partial top view of a fourth aspect of an active device array substrate of a display device according to an embodiment of the invention. In FIG. 6A, the second pixel electrode PE2 covered by the first pixel electrode PE1 is indicated by a broken line. 6B is a schematic cross-sectional view taken along line II-II' in FIG. 6A. 6A and 6B, the main difference between the active element array substrate 10D and the active element array substrate 10A of FIGS. 3A and 3C is the relative arrangement relationship of the first pixel electrode PE1, the second pixel electrode PE2 and the common electrode CE And the area of each electrode. For example, the first pixel electrode PE1 and the second pixel electrode PE2 overlap each other and are located on opposite sides of the common electrode CE, respectively. In other words, the first pixel electrode PE1 and the second pixel electrode PE2 do not belong to the same patterned conductive layer.

詳細來說,主動元件陣列基板10D還包括絕緣層IN5。第一畫素電極PE1設置在絕緣層IN5上,且第一畫素電極PE1通過貫孔TH1而與第一驅動元件T1的汲極D1電性連接。第二畫素電極PE2設置在絕緣層IN3上,且第二畫素電極PE2通過貫孔TH2而與第二驅動元件T2的汲極D2電性連接。共用電極CE位於絕緣層IN4以及絕緣層IN5之間。In detail, the active device array substrate 10D further includes an insulating layer IN5. The first pixel electrode PE1 is disposed on the insulating layer IN5, and the first pixel electrode PE1 is electrically connected to the drain D1 of the first driving element T1 through the through hole TH1. The second pixel electrode PE2 is disposed on the insulating layer IN3, and the second pixel electrode PE2 is electrically connected to the drain D2 of the second driving element T2 through the through hole TH2. The common electrode CE is located between the insulating layer IN4 and the insulating layer IN5.

在圖3A至圖5的實施例中,第二畫素電極PE2位於不透光區A2中(第二畫素電極PE2被裝飾層遮蔽),因此第二畫素電極PE2除了可為透光電極之外,也可為非透光電極。在本實施例中,第一畫素電極PE1以及第二畫素電極PE2彼此重疊(第二畫素電極PE2位於第一畫素電極PE1下方)。換句話說,第二畫素電極PE2與第一畫素電極PE1共同位於透光區中,因此第二畫素電極PE2較佳為透光電極,以避免影響子畫素SP的開口率。In the embodiments of FIGS. 3A to 5, the second pixel electrode PE2 is located in the opaque area A2 (the second pixel electrode PE2 is shielded by the decorative layer), so the second pixel electrode PE2 can be a transparent electrode except for In addition, it may be a non-light-transmitting electrode. In this embodiment, the first pixel electrode PE1 and the second pixel electrode PE2 overlap each other (the second pixel electrode PE2 is located below the first pixel electrode PE1). In other words, the second pixel electrode PE2 and the first pixel electrode PE1 are co-located in the light-transmitting area, so the second pixel electrode PE2 is preferably a light-transmitting electrode to avoid affecting the aperture ratio of the sub-pixel SP.

在本實施例中,第二畫素電極PE2的面積可等於第一畫素電極PE1的面積。在此架構下,第一畫素電極PE1與第二畫素電極PE2可具有相同的圖案,如此第一畫素電極PE1與第二畫素電極PE2可採用相同的光罩製作。此外,本實施例可具有較大的第二儲存電容。In this embodiment, the area of the second pixel electrode PE2 may be equal to the area of the first pixel electrode PE1. Under this architecture, the first pixel electrode PE1 and the second pixel electrode PE2 can have the same pattern, so that the first pixel electrode PE1 and the second pixel electrode PE2 can be made using the same photomask. In addition, this embodiment may have a larger second storage capacitor.

圖7及圖8分別是本發明的實施例的顯示裝置的兩種態樣的上視示意圖。請參照圖7及圖8,在顯示裝置1A以及顯示裝置1B中,多個子畫素SP排列成陣列。顯示裝置1A以及顯示裝置1B還包括多條導線W。這些導線W從所述陣列的至少一側連接多個子畫素SP的多條第二控制線(未繪示,請參照圖1)。在此架構下,越遠離所述陣列的所述至少一側的多個子畫素SP會因電阻電容負載(RC loading)而具有較嚴重的漏電現象。也就是說,所述陣列的不同區域的子畫素SP的漏電程度會因電阻電容負載而有所不同。為了降低因漏電程度不同對畫面均勻性造成的負面影響,可依據漏電的嚴重程度對多個子畫素SP的多個第二儲存電容的大小進行區域性調變。藉由使位於漏電問題越嚴重的區域的子畫素SP具有較大的第二儲存電容,可提升第二模式下的畫面均勻性。7 and 8 are schematic top views of two aspects of the display device of the embodiment of the present invention. 7 and 8, in the display device 1A and the display device 1B, a plurality of sub-pixels SP are arranged in an array. The display device 1A and the display device 1B further include a plurality of wires W. These wires W are connected to a plurality of second control lines of a plurality of sub-pixels SP (not shown, please refer to FIG. 1) from at least one side of the array. Under this architecture, the plurality of sub-pixels SP further away from the at least one side of the array will have serious leakage due to RC loading. That is to say, the degree of leakage of the sub-pixels SP in different areas of the array will be different due to the resistive and capacitive loads. In order to reduce the negative impact on the image uniformity caused by different levels of leakage, the size of the plurality of second storage capacitors of the plurality of sub-pixels SP can be adjusted regionally according to the severity of the leakage. By making the sub-pixel SP located in the region where the leakage problem is more serious have a larger second storage capacitor, the picture uniformity in the second mode can be improved.

在圖7中,這些導線W從所述陣列的其中一側(如左側)連接多個子畫素SP的多條第二控制線,因此越遠離所述陣列的所述其中一側(如左側)的多個子畫素SP(即越接近所述陣列的右側的多個子畫素SP)會因電阻電容負載而具有較嚴重的漏電現象。在此架構下,可使多個子畫素SP的多個第二儲存電容的大小朝遠離所述其中一側的方向X遞增(如由左而右遞增),以提升第二模式下的畫面均勻性。例如,位於所述陣列的左側的多個子畫素SP的多個第二儲存電容的大小為C,位於所述陣列的中心的多個子畫素SP的多個第二儲存電容的大小為1.1C至1.3C,且位於所述陣列的右側的多個子畫素SP的多個第二儲存電容的大小為1.3C至1.5C。另一方面,所述多個子畫素SP的多個第一儲存電容(未繪示,請參照圖1)的大小可皆相同。In FIG. 7, these wires W connect the second control lines of the plurality of sub-pixels SP from one side (such as the left side) of the array, so the farther away from the one side (such as the left side) of the array The multiple sub-pixels SP (that is, the multiple sub-pixels SP closer to the right side of the array) will have more serious leakage due to resistive and capacitive loads. Under this architecture, the size of the plurality of second storage capacitors of the plurality of sub-pixels SP can be increased toward the direction X away from the one side (such as increasing from left to right) to improve the uniformity of the picture in the second mode Sex. For example, the size of the plurality of second storage capacitors of the plurality of sub-pixels SP located on the left side of the array is C, and the size of the plurality of second storage capacitors of the plurality of sub-pixel SPs located in the center of the array is 1.1C Up to 1.3C, and the sizes of the plurality of second storage capacitors of the plurality of sub-pixels SP located on the right side of the array are 1.3C to 1.5C. On the other hand, the first storage capacitors (not shown, please refer to FIG. 1) of the plurality of sub-pixels SP may all have the same size.

在圖8中,多條導線W從所述陣列的相對兩側(左右兩側)連接多個子畫素SP的多條第二控制線。在此架構下,越遠離所述陣列的所述相對兩側的多個子畫素SP(即越接近所述陣列的中心的多個子畫素SP)會因電阻電容負載而具有較嚴重的漏電現象。因此,可使多個子畫素SP的多個第二儲存電容的大小從所述相對兩側朝所述陣列的中心遞增,以提升第二模式下的畫面均勻性。例如,位於所述陣列的左右兩側的多個子畫素SP的多個第二儲存電容的大小為C,且位於所述陣列的中心的多個子畫素SP的多個第二儲存電容的大小為1.1C至1.5C。In FIG. 8, multiple wires W connect multiple second control lines of multiple sub-pixels SP from opposite sides (left and right sides) of the array. Under this architecture, the multiple sub-pixels SP that are farther away from the opposite sides of the array (ie, the multiple sub-pixels SP closer to the center of the array) will have more serious leakage due to resistive and capacitive loads . Therefore, the size of the plurality of second storage capacitors of the plurality of sub-pixels SP can be increased from the opposite sides toward the center of the array to improve the uniformity of the picture in the second mode. For example, the size of the plurality of second storage capacitors of the plurality of sub-pixels SP located on the left and right sides of the array is C, and the size of the plurality of second storage capacitors of the plurality of sub-pixel SPs located in the center of the array It is 1.1C to 1.5C.

綜上所述,在本發明的實施例中,顯示裝置可在多個模式(包括第一模式與第二模式)之間做切換。在第一模式下,第二驅動元件持續處於關閉狀態,使子畫素具有較小的儲存電容,從而有助於改善充電率問題。在第二模式下,第二驅動元件持續處於開啟狀態,使子畫素具有較大的儲存電容,從而能有效抑制漏電效應對於顯示品質的負面影響。在一實施例中,藉由調變膜層或元件的相對設置關係及製作順序可達到降低所需的絕緣層的數量、避免負載增加、開口率的提升以及第二儲存電容的提升等優點中的至少一個。在另一實施例中,還可依據漏電的嚴重程度對多個子畫素的多個第二儲存電容的大小進行區域性調變,以提升第二模式下的畫面均勻性。In summary, in the embodiments of the present invention, the display device can switch between multiple modes (including the first mode and the second mode). In the first mode, the second driving element is continuously turned off, so that the sub-pixel has a smaller storage capacitance, thereby helping to improve the charging rate problem. In the second mode, the second driving element is continuously turned on, so that the sub-pixel has a larger storage capacitance, which can effectively suppress the negative effect of the leakage effect on the display quality. In one embodiment, by adjusting the relative arrangement relationship and manufacturing sequence of the film layer or device, the number of required insulating layers can be reduced, the increase in load, the increase in the aperture ratio, and the improvement in the second storage capacitor can be achieved. At least one. In another embodiment, the size of the plurality of second storage capacitors of the plurality of sub-pixels can also be adjusted regionally according to the severity of the leakage to improve the uniformity of the picture in the second mode.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed as above with examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be subject to the scope defined in the appended patent application.

1、1A、1B‧‧‧顯示裝置 10A、10B、10C、10D‧‧‧主動元件陣列基板 A1‧‧‧透光區 A2‧‧‧非透光區 C1‧‧‧第一儲存電容 C2‧‧‧第二儲存電容 CE‧‧‧共用電極 CH1、CH2‧‧‧通道層 CL1‧‧‧第一控制線 CL2‧‧‧第二控制線 CL3‧‧‧第三控制線 Cm‧‧‧顯示介質電容 D1、D2‧‧‧汲極 G1、G2‧‧‧閘極 H1‧‧‧第一維持時間段 H2‧‧‧第二維持時間段 IN1、IN2、IN3、IN4、IN5‧‧‧絕緣層 L1A、L1B、L2A、L2B‧‧‧線條 PE1‧‧‧第一畫素電極 PE2‧‧‧第二畫素電極 S1、S2‧‧‧源極 SC1‧‧‧第一掃描時間段 SC2‧‧‧第二掃描時間段 SL‧‧‧開孔 SP‧‧‧子畫素 SUB‧‧‧基板 T1‧‧‧第一驅動元件 T2‧‧‧第二驅動元件 TH1、TH2‧‧‧貫孔 W‧‧‧導線 X‧‧‧方向 I-I’、II-II’‧‧‧剖線1. 1A, 1B‧‧‧Display device 10A, 10B, 10C, 10D ‧‧‧ active element array substrate A1‧‧‧Transparent area A2‧‧‧non-transmissive area C1‧‧‧ First storage capacitor C2‧‧‧Second storage capacitor CE‧‧‧Common electrode CH1, CH2‧‧‧channel layer CL1‧‧‧ First control line CL2‧‧‧Second control line CL3‧‧‧The third control line Cm‧‧‧display dielectric capacitance D1, D2‧‧‧ji G1, G2 ‧‧‧ gate H1‧‧‧ First maintenance period H2‧‧‧Second maintenance period IN1, IN2, IN3, IN4, IN5‧‧‧‧Insulation L1A, L1B, L2A, L2B‧‧‧Line PE1‧‧‧The first pixel electrode PE2‧‧‧Second pixel electrode S1, S2‧‧‧Source SC1‧‧‧ First scan time period SC2‧‧‧Second scanning time period SL‧‧‧Opening SP‧‧‧ Subpixel SUB‧‧‧Substrate T1‧‧‧ First driving element T2‧‧‧second drive element TH1, TH2‧‧‧Through hole W‧‧‧Wire X‧‧‧ direction I-I’, II-II’ ‧‧‧ section line

圖1是本發明的實施例的顯示裝置的一個子畫素的等效電路圖(equivalent circuit diagram)。 圖2A及圖2B分別是第一模式及第二模式的驅動波形圖。 圖3A是本發明的實施例的顯示裝置的主動元件陣列基板的第一種態樣的局部上視示意圖。 圖3B是圖3A中透光區以及非透光區的示意圖。 圖3C是圖3A中剖線I-I’的剖面示意圖。 圖4是本發明的實施例的顯示裝置的主動元件陣列基板的第二種態樣的局部上視示意圖。 圖5是本發明的實施例的顯示裝置的主動元件陣列基板的第三種態樣的局部上視示意圖。 圖6A是本發明的實施例的顯示裝置的主動元件陣列基板的第四種態樣的局部上視示意圖。 圖6B是圖6A中剖線II-II’的剖面示意圖。 圖7及圖8分別是本發明的實施例的顯示裝置的兩種態樣的上視示意圖。FIG. 1 is an equivalent circuit diagram of one sub-pixel of the display device of the embodiment of the present invention. 2A and 2B are driving waveform diagrams of the first mode and the second mode, respectively. 3A is a partial schematic top view of a first aspect of an active device array substrate of a display device according to an embodiment of the invention. FIG. 3B is a schematic diagram of the light-transmitting area and the non-light-transmitting area in FIG. 3A. 3C is a schematic cross-sectional view taken along line I-I' in FIG. 3A. 4 is a partial schematic top view of a second aspect of an active element array substrate of a display device according to an embodiment of the invention. 5 is a partial schematic top view of a third aspect of an active device array substrate of a display device according to an embodiment of the invention. 6A is a schematic partial top view of a fourth aspect of an active device array substrate of a display device according to an embodiment of the invention. 6B is a schematic cross-sectional view taken along line II-II' in FIG. 6A. 7 and 8 are schematic top views of two aspects of the display device of the embodiment of the present invention.

1‧‧‧顯示裝置 1‧‧‧Display device

C1‧‧‧第一儲存電容 C1‧‧‧ First storage capacitor

C2‧‧‧第二儲存電容 C2‧‧‧Second storage capacitor

CL1‧‧‧第一控制線 CL1‧‧‧ First control line

CL2‧‧‧第二控制線 CL2‧‧‧Second control line

CL3‧‧‧第三控制線 CL3‧‧‧The third control line

Cm‧‧‧顯示介質電容 Cm‧‧‧display dielectric capacitance

D1、D2‧‧‧汲極 D1, D2‧‧‧ji

G1、G2‧‧‧閘極 G1, G2 ‧‧‧ gate

S1、S2‧‧‧源極 S1, S2‧‧‧Source

SP‧‧‧子畫素 SP‧‧‧ Subpixel

T1‧‧‧第一驅動元件 T1‧‧‧ First driving element

T2‧‧‧第二驅動元件 T2‧‧‧second drive element

Claims (10)

一種顯示裝置,包括多個子畫素,每一個子畫素包括一第一控制線、一第二控制線、一第一驅動元件、一第二驅動元件、一第一儲存電容、一顯示介質電容以及一第二儲存電容,其中所述第一驅動元件的一閘極電性連接所述第一控制線,所述第一驅動元件的一汲極電性連接所述第二驅動元件的一源極、所述第一儲存電容以及所述顯示介質電容,所述第二驅動元件的一閘極電性連接所述第二控制線,且所述第二驅動元件的一汲極電性連接所述第二儲存電容,其中 在一第一模式下,所述第一驅動元件在一第一掃描時間段處於開啟狀態且在一第一維持時間段處於關閉狀態,且所述第二驅動元件在所述第一掃描時間段以及所述第一維持時間段處於關閉狀態, 在一第二模式下,所述第一驅動元件在一第二掃描時間段處於開啟狀態且在一第二維持時間段處於關閉狀態,且所述第二驅動元件在所述第二掃描時間段以及所述第二維持時間段處於開啟狀態。A display device includes a plurality of sub-pixels, each sub-pixel includes a first control line, a second control line, a first driving element, a second driving element, a first storage capacitor, and a display medium capacitor And a second storage capacitor, wherein a gate of the first driving element is electrically connected to the first control line, and a drain of the first driving element is electrically connected to a source of the second driving element Electrode, the first storage capacitor and the display medium capacitor, a gate of the second driving element is electrically connected to the second control line, and a drain of the second driving element is electrically connected to the Said second storage capacitor, wherein In a first mode, the first driving element is turned on during a first scanning period and is off during a first maintenance period, and the second driving element is during the first scanning period And the first maintenance period is in a closed state, In a second mode, the first driving element is turned on during a second scanning period and is off during a second sustaining period, and the second driving element is during the second scanning period And the second maintenance period is in an on state. 如申請專利範圍第1項所述的顯示裝置,其中所述第一模式具有一第一操作頻率,所述第二模式具有一第二操作頻率,且所述第二操作頻率低於所述第一操作頻率。The display device according to item 1 of the patent application scope, wherein the first mode has a first operating frequency, the second mode has a second operating frequency, and the second operating frequency is lower than the first 1. Operating frequency. 如申請專利範圍第1項所述的顯示裝置,其中每一個子畫素更包括一第一畫素電極、一第二畫素電極以及重疊於所述第一畫素電極與所述第二畫素電極的一共用電極,所述第一儲存電容的組成包括所述第一畫素電極以及所述共用電極,且所述第二儲存電容的組成包括所述第二畫素電極以及所述共用電極。The display device according to item 1 of the patent application scope, wherein each sub-pixel further includes a first pixel electrode, a second pixel electrode, and overlapping the first pixel electrode and the second picture A common electrode of the pixel electrode, the composition of the first storage capacitor includes the first pixel electrode and the common electrode, and the composition of the second storage capacitor includes the second pixel electrode and the common electrode. 如申請專利範圍第3項所述的顯示裝置,其中所述第一畫素電極以及所述第二畫素電極位於所述第一驅動元件以及所述第二驅動元件的同一側,且所述第一畫素電極以及所述第二畫素電極彼此不重疊。The display device according to item 3 of the patent application scope, wherein the first pixel electrode and the second pixel electrode are located on the same side of the first driving element and the second driving element, and the The first pixel electrode and the second pixel electrode do not overlap each other. 如申請專利範圍第3項所述的顯示裝置,其中所述第二畫素電極重疊於所述第一驅動元件以及所述第二驅動元件。The display device according to item 3 of the patent application scope, wherein the second pixel electrode overlaps the first driving element and the second driving element. 如申請專利範圍第4或5項所述的顯示裝置,其中每一個子畫素具有一透光區以及一非透光區,所述第一儲存電容的所述第一畫素電極與所述透光區重疊,且所述第二儲存電容的所述第二畫素電極與所述非透光區重疊。The display device as described in claim 4 or 5, wherein each sub-pixel has a light-transmitting area and a non-light-transmitting area, the first pixel electrode of the first storage capacitor and the The light transmission areas overlap, and the second pixel electrode of the second storage capacitor overlaps the non-light transmission area. 如申請專利範圍第3項所述的顯示裝置,其中所述第一畫素電極以及所述第二畫素電極位於所述第一驅動元件以及所述第二驅動元件的同一側,所述第一畫素電極以及所述第二畫素電極彼此重疊且分別位於所述共用電極的相對兩側,其中每一個子畫素具有一透光區以及一非透光區,且所所述第一儲存電容的述第一畫素電極以及所述第二儲存電容的所述第二畫素電極重疊於所述透光區。The display device of claim 3, wherein the first pixel electrode and the second pixel electrode are located on the same side of the first driving element and the second driving element, and the A pixel electrode and the second pixel electrode overlap each other and are respectively located on opposite sides of the common electrode, wherein each sub-pixel has a light-transmitting area and a non-light-transmitting area, and the first The first pixel electrode of the storage capacitor and the second pixel electrode of the second storage capacitor overlap the light-transmitting region. 如申請專利範圍第1項所述的顯示裝置,其中所述多個子畫素排列成一陣列,所述顯示裝置更包括多條導線,其中所述多條導線從所述陣列的其中一側連接所述多個子畫素的多條第二控制線,且所述多個子畫素的多個第二儲存電容的大小朝遠離所述其中一側的方向遞增。The display device according to item 1 of the patent application scope, wherein the plurality of sub-pixels are arranged in an array, and the display device further includes a plurality of wires, wherein the plurality of wires are connected to the side from one side of the array A plurality of second control lines of the plurality of sub-pixels, and the sizes of the plurality of second storage capacitors of the plurality of sub-pixels increase away from the one side. 如申請專利範圍第1項所述的顯示裝置,其中所述多個子畫素排列成一陣列,所述顯示裝置更包括多條導線,其中所述多條導線從所述陣列的相對兩側連接所述多個子畫素的多條第二控制線,且所述多個子畫素的多個第二儲存電容的大小從所述相對兩側朝所述陣列的中心遞增。The display device as described in item 1 of the patent application scope, wherein the plurality of sub-pixels are arranged in an array, and the display device further includes a plurality of wires, wherein the plurality of wires are connected from opposite sides of the array A plurality of second control lines of the plurality of sub-pixels, and the sizes of the plurality of second storage capacitors of the plurality of sub-pixels increase from the opposite sides toward the center of the array. 如申請專利範圍第1項所述的顯示裝置,其中所述多個子畫素的多個第一儲存電容的大小皆相同。The display device as described in item 1 of the patent application scope, wherein the sizes of the plurality of first storage capacitors of the plurality of sub-pixels are the same.
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