TWI570492B - Pixel structure - Google Patents
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- TWI570492B TWI570492B TW104130900A TW104130900A TWI570492B TW I570492 B TWI570492 B TW I570492B TW 104130900 A TW104130900 A TW 104130900A TW 104130900 A TW104130900 A TW 104130900A TW I570492 B TWI570492 B TW I570492B
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- 239000003990 capacitor Substances 0.000 claims description 37
- 125000006850 spacer group Chemical group 0.000 claims description 5
- 238000000034 method Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 21
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 101100311330 Schizosaccharomyces pombe (strain 972 / ATCC 24843) uap56 gene Proteins 0.000 description 3
- 101150018444 sub2 gene Proteins 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 101150075118 sub1 gene Proteins 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Liquid Crystal (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
本發明是有關於一種畫素結構，且特別是有關於一種顯示面板的畫素結構。The present invention relates to a pixel structure, and more particularly to a pixel structure of a display panel.
隨著光電與半導體技術上的進步，其帶動了平面顯示器之蓬勃發展。在諸多平面顯示器中，液晶顯示器由於因具有高空間利用效率、低消耗功率、無輻射以及低電磁干擾等優越特性，因而成為市場之主流。目前，液晶顯示器在顯示畫面時通常具備廣視角的特性，以滿足多位使用者同時觀看同一台顯示裝置的需求。然而，具備廣視角特性之顯示器所存在的色偏（color washout）現象也是為人所詬病。為了解決色偏之問題，現有技術上的畫素結構之設計會降低顯示面板的開口率(aperture ratio)或帶來影像殘留的問題(image sticking)。因此，如何克服上述問題並兼顧顯示開口率以及廣視角顯示效果，為目前所欲研究的主題。With the advancement of optoelectronics and semiconductor technology, it has driven the development of flat panel displays. Among many flat panel displays, liquid crystal displays have become the mainstream of the market due to their superior characteristics such as high space utilization efficiency, low power consumption, no radiation, and low electromagnetic interference. At present, a liquid crystal display usually has a wide viewing angle when displaying a screen, so as to meet the needs of multiple users simultaneously viewing the same display device. However, the color washout phenomenon of displays having a wide viewing angle characteristic is also criticized. In order to solve the problem of color shift, the design of the pixel structure of the prior art can reduce the aperture ratio of the display panel or cause image sticking. Therefore, how to overcome the above problems and take into account the display aperture ratio and the wide viewing angle display effect is the subject of current research.
本發明提供一種畫素結構，可用以解決色偏以及影像殘留的問題，且可同時提高顯示開口率並兼顧廣視角的顯示效果。The invention provides a pixel structure, which can be used to solve the problem of color shift and image sticking, and can simultaneously increase the display aperture ratio and take into consideration the display effect of a wide viewing angle.
本發明的畫素結構包括掃描線、資料線、分享訊號線、主動元件、第一畫素電極、第二畫素電極、分享開關元件、第一分享電容器以及第二分享電容器。分享訊號線於掃描線設置。主動元件與掃描線以及資料線電性連接。第一畫素電極與主動元件電性連接。第二畫素電極與第一畫素電極分離開來且與主動元件電性連接。分享開關元件與分享訊號線以及主動元件電性連接。第一分享電容器包括上電極以及下電極。上電極以及下電極彼此重疊設置，其中，上電極與分享開關元件電性連接。第二分享電容器包括第一電極以及第二電極。第一電極以及第二電極彼此重疊設置，其中，第一電極與第一畫素電極電性連接，且第二電極與分享開關元件電性連接。The pixel structure of the present invention includes a scan line, a data line, a shared signal line, an active element, a first pixel electrode, a second pixel electrode, a sharing switching element, a first sharing capacitor, and a second sharing capacitor. The shared signal line is set on the scan line. The active component is electrically connected to the scan line and the data line. The first pixel electrode is electrically connected to the active element. The second pixel electrode is separated from the first pixel electrode and electrically connected to the active device. The sharing switching element is electrically connected to the shared signal line and the active component. The first sharing capacitor includes an upper electrode and a lower electrode. The upper electrode and the lower electrode are disposed to overlap each other, wherein the upper electrode is electrically connected to the sharing switching element. The second sharing capacitor includes a first electrode and a second electrode. The first electrode and the second electrode are disposed to overlap each other, wherein the first electrode is electrically connected to the first pixel electrode, and the second electrode is electrically connected to the sharing switching element.
基於上述，本發明的畫素結構包括有上電極以及下電極彼此重疊設置的第一分享電容器，以及第一電極以及第二電極彼此重疊設置的第二分享電容器。因此，本發明的畫素結構可用以解決色偏以及影像殘留的問題，且可同時提高顯示開口率並兼顧廣視角的顯示效果。Based on the above, the pixel structure of the present invention includes a first sharing capacitor having an upper electrode and a lower electrode overlapped with each other, and a second sharing capacitor in which the first electrode and the second electrode are disposed to overlap each other. Therefore, the pixel structure of the present invention can be used to solve the problem of color shift and image sticking, and can simultaneously increase the display aperture ratio and achieve the display effect of a wide viewing angle.
為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。The above described features and advantages of the invention will be apparent from the following description.
圖1為本發明一實施例的顯示面板之剖面示意圖。請參照圖1，顯示面板100包括畫素陣列基板110、對向基板120以及顯示介質130。顯示面板100例如是液晶顯示面板或是其他形式之顯示面板。1 is a cross-sectional view of a display panel in accordance with an embodiment of the present invention. Referring to FIG. 1 , the display panel 100 includes a pixel array substrate 110 , an opposite substrate 120 , and a display medium 130 . The display panel 100 is, for example, a liquid crystal display panel or other form of display panel.
畫素陣列基板110包括基板sub1以及畫素陣列PA。基板sub1之材質可為玻璃、石英、有機聚合物或是金屬等等。畫素陣列PA配置在基板sub1上，且畫素陣列PA包括多個畫素結構。關於畫素結構之設計將於後文中詳細地描述。The pixel array substrate 110 includes a substrate sub1 and a pixel array PA. The material of the substrate sub1 may be glass, quartz, organic polymer or metal or the like. The pixel array PA is disposed on the substrate sub1, and the pixel array PA includes a plurality of pixel structures. The design of the pixel structure will be described in detail later.
對向基板120位於畫素陣列基板110的對向側。對向基板120包括基板sub2以及電極層EL。基板sub2之材質可為玻璃、石英或有機聚合物等等。電極層EL是全面地覆蓋於基板sub2上。電極層EL為透明導電層，其材質包括金屬氧化物，例如是銦錫氧化物或者是銦鋅氧化物。The opposite substrate 120 is located on the opposite side of the pixel array substrate 110. The opposite substrate 120 includes a substrate sub2 and an electrode layer EL. The material of the substrate sub2 may be glass, quartz or an organic polymer or the like. The electrode layer EL is entirely covered on the substrate sub2. The electrode layer EL is a transparent conductive layer, and its material includes a metal oxide such as indium tin oxide or indium zinc oxide.
顯示介質130位於畫素陣列基板110與對向基板120之間。當顯示面板100為液晶顯示面板時，顯示介質130例如是液晶分子。畫素陣列基板110與對向基板120之間設置有多個間隙物SP。間隙物SP與畫素陣列基板110以及對向基板120接觸以維持適當的晶穴間隙。特別是，間隙物SP是設置在畫素陣列PA的各個畫素結構中。The display medium 130 is located between the pixel array substrate 110 and the opposite substrate 120. When the display panel 100 is a liquid crystal display panel, the display medium 130 is, for example, liquid crystal molecules. A plurality of spacers SP are disposed between the pixel array substrate 110 and the opposite substrate 120. The spacer SP is in contact with the pixel array substrate 110 and the opposite substrate 120 to maintain an appropriate cell gap. In particular, the spacers SP are disposed in respective pixel structures of the pixel array PA.
圖2為本發明一實施例的畫素結構示意圖。為了清楚地說明本發明之實施例，圖2僅繪示出圖1之畫素陣列PA的其中一個畫素結構，此領域技術人員應可以理解，圖1之畫素陣列PA實際上即是由多個圖2所示之畫素結構組成陣列形式所構成。請參考圖2，畫素結構200包括掃描線SL、資料線DL、分享訊號線SgL、主動元件TFT、第一畫素電極PE1、第二畫素電極PE2、分享開關元件SWE、第一分享電容器SC1以及第二分享電容器SC2。FIG. 2 is a schematic diagram of a pixel structure according to an embodiment of the present invention. In order to clearly illustrate an embodiment of the present invention, FIG. 2 only shows one of the pixel structures of the pixel array PA of FIG. 1. It should be understood by those skilled in the art that the pixel array PA of FIG. 1 is actually A plurality of pixel structures shown in FIG. 2 are formed in an array form. Referring to FIG. 2, the pixel structure 200 includes a scan line SL, a data line DL, a shared signal line SgL, an active device TFT, a first pixel electrode PE1, a second pixel electrode PE2, a shared switching element SWE, and a first sharing capacitor. SC1 and second sharing capacitor SC2.
在本實施例中，掃描線SL與資料線DL彼此交越設置。換言之，掃描線SL的延伸方向與資料線DL的延伸方向不平行，較佳的是，掃描線SL的延伸方向與資料線DL的延伸方向垂直。另外，分享訊號線SgL平行於掃描線SL設置。基於導電性的考量，掃描線SL、資料線DL與分享訊號線SgL一般是使用金屬材料。然，本發明不限於此，根據其他實施例，掃描線SL、資料線DL與分享訊號線SgL也可以使用其他導電材料。例如：合金、金屬材料的氮化物、金屬材料的氧化物、金屬材料的氮氧化物、或其它合適的材料、或是金屬材料與其它導材料的堆疊層。另外，遮光圖案層(未繪示)是對應於掃描線SL以及資料線DL設置，並用以防止漏光。In the present embodiment, the scanning line SL and the data line DL are arranged to cross each other. In other words, the extending direction of the scanning line SL is not parallel to the extending direction of the data line DL. Preferably, the extending direction of the scanning line SL is perpendicular to the extending direction of the data line DL. In addition, the shared signal line SgL is set in parallel to the scan line SL. Based on the conductivity considerations, the scan line SL, the data line DL, and the shared signal line SgL are generally made of a metal material. However, the present invention is not limited thereto. According to other embodiments, other conductive materials may be used for the scan line SL, the data line DL, and the shared signal line SgL. For example: alloys, nitrides of metallic materials, oxides of metallic materials, oxynitrides of metallic materials, or other suitable materials, or stacked layers of metallic materials and other conductive materials. In addition, a light shielding pattern layer (not shown) is disposed corresponding to the scan line SL and the data line DL, and is used to prevent light leakage.
主動元件TFT可以是底部閘極型薄膜電晶體或是頂部閘極型薄膜電晶體。主動元件TFT與掃描線SL以及資料線DL電性連接。主動元件TFT包括閘極G、源極S、第一汲極D1、第二汲極D2以及通道(未繪示)。閘極G與掃描線SL連接，且源極S位於閘極G上方。第一汲極D1對應源極S設置，且與第一畫素電極PE1電性連接。第二汲極D2對應源極S設置，且與第二畫素電極PE2電性連接。在本實施例中，第一畫素電極PE1與第二畫素電極PE2是以塊狀電極來表示，但不限於此。舉例來說，第一畫素電極PE1與第二畫素電極PE2亦可以是具有狹縫圖案的電極。The active device TFT may be a bottom gate type thin film transistor or a top gate type thin film transistor. The active device TFT is electrically connected to the scan line SL and the data line DL. The active device TFT includes a gate G, a source S, a first drain D1, a second drain D2, and a channel (not shown). The gate G is connected to the scan line SL, and the source S is located above the gate G. The first drain D1 is disposed corresponding to the source S and is electrically connected to the first pixel electrode PE1. The second drain D2 is disposed corresponding to the source S and electrically connected to the second pixel electrode PE2. In the present embodiment, the first pixel electrode PE1 and the second pixel electrode PE2 are represented by block electrodes, but are not limited thereto. For example, the first pixel electrode PE1 and the second pixel electrode PE2 may also be electrodes having a slit pattern.
第一畫素電極PE1是與主動元件TFT電性連接。特別是，第一接觸窗CW1位於主動元件TFT之第一汲極D1與第一畫素電極PE1之間以使兩者電性連接。第二畫素電極PE2與第一畫素電極PE1分離開來且與主動元件TFT電性連接。特別是，第二接觸窗CW2位於主動元件TFT之第二汲極D2與第二畫素電極PE2之間以使兩者電性連接，其中，第一接觸窗CW1以及第二接觸窗CW2位於掃描線SL的同一側。另外，第一接觸窗CW1與第二接觸窗CW2位於掃描線SL以及分享訊號線SgL之間。再者，第一畫素電極PE1與分享訊號線SgL部分重疊，而第二畫素電極PE2與掃描線SL部分重疊。The first pixel electrode PE1 is electrically connected to the active device TFT. In particular, the first contact window CW1 is located between the first drain D1 of the active device TFT and the first pixel electrode PE1 to electrically connect the two. The second pixel electrode PE2 is separated from the first pixel electrode PE1 and electrically connected to the active device TFT. In particular, the second contact window CW2 is located between the second drain D2 of the active device TFT and the second pixel electrode PE2 to electrically connect the two, wherein the first contact window CW1 and the second contact window CW2 are located in the scan. The same side of line SL. In addition, the first contact window CW1 and the second contact window CW2 are located between the scan line SL and the shared signal line SgL. Furthermore, the first pixel electrode PE1 partially overlaps the shared signal line SgL, and the second pixel electrode PE2 partially overlaps the scan line SL.
在本實施例中，分享開關元件SWE與分享訊號線SgL以及主動元件TFT電性連接。分享開關元件SWE包括閘極Ga、源極Sa、汲極Da以及通道(未繪示)。In this embodiment, the sharing switching element SWE is electrically connected to the shared signal line SgL and the active device TFT. The sharing switching element SWE includes a gate Ga, a source Sa, a drain Da, and a channel (not shown).
第一分享電容器SC1包括上電極TE以及下電極BE。上電極TE以及下電極BE彼此重疊設置，其中，上電極TE與分享開關元件SWE電性連接。另外，間隙物SP是對應設置在第一分享電容器SC1的上方，因此可達到節省空間之優點。The first sharing capacitor SC1 includes an upper electrode TE and a lower electrode BE. The upper electrode TE and the lower electrode BE are disposed to overlap each other, wherein the upper electrode TE is electrically connected to the sharing switching element SWE. In addition, the spacer SP is disposed correspondingly above the first sharing capacitor SC1, so that space saving can be achieved.
第二分享電容器SC2包括第一電極FE以及第二電極SE，且第一電極FE以及第二電極SE彼此重疊設置。第一電極FE與第一畫素電極PE1電性連接，且第一電極FE與第一畫素電極PE1可為同一層。第二電極SE與分享開關元件SWE電性連接。另外，第二分享電容器SC2更包括第三電極TdE。第三電極TdE與第二電極SE重疊設置。第三電極TdE與掃描線SL電性連接，且第三電極TdE與掃描線SL可為同一層。The second sharing capacitor SC2 includes a first electrode FE and a second electrode SE, and the first electrode FE and the second electrode SE are disposed to overlap each other. The first electrode FE is electrically connected to the first pixel electrode PE1, and the first electrode FE and the first pixel electrode PE1 may be the same layer. The second electrode SE is electrically connected to the sharing switching element SWE. In addition, the second sharing capacitor SC2 further includes a third electrode TdE. The third electrode TdE is disposed to overlap the second electrode SE. The third electrode TdE is electrically connected to the scan line SL, and the third electrode TdE and the scan line SL may be the same layer.
在本實施例中，畫素結構200更包括共用電極圖案CEP與第一畫素電極PE1以及第二畫素電極PE2重疊設置，以形成第一儲存電容器以及第二儲存電容器。另外，第一分享電容器SC1之下電極BE與共用電極圖案CEP連接，且下電極BE與共用電極圖案CEP可為同一層。承上所述，畫素結構200中第一分享電容器SC1以及第二分享電容器SC2之設計可用以解決色偏以及影像殘留的問題，並且可同時提高顯示開口率並兼顧廣視角的顯示效果。In the embodiment, the pixel structure 200 further includes a common electrode pattern CEP overlapping with the first pixel electrode PE1 and the second pixel electrode PE2 to form a first storage capacitor and a second storage capacitor. In addition, the lower electrode BE of the first sharing capacitor SC1 is connected to the common electrode pattern CEP, and the lower electrode BE and the common electrode pattern CEP may be the same layer. As described above, the design of the first sharing capacitor SC1 and the second sharing capacitor SC2 in the pixel structure 200 can be used to solve the problem of color shift and image sticking, and can simultaneously increase the display aperture ratio and take into consideration the display effect of the wide viewing angle.
圖3為本發明另一實施例的畫素結構示意圖。接著，請參考圖3進行說明。圖3的畫素結構300與圖2的畫素結構200類似，因此相同元件以相同標號表示，且不予贅述。圖3的畫素結構300與圖2的畫素結構200的差異在於，畫素結構300的第二分享電容器SC2不包括第三電極TdE。相對的，畫素結構300的第二分享電容器之第二電極SE更包括延伸部EP，而延伸部EP與掃描線SL重疊設置。承上所述，畫素結構300中第一分享電容器SC1以及第二分享電容器SC2之設計可用以解決色偏以及影像殘留的問題，並且可同時提高顯示開口率並兼顧廣視角的顯示效果。FIG. 3 is a schematic diagram of a pixel structure according to another embodiment of the present invention. Next, please refer to FIG. 3 for explanation. The pixel structure 300 of FIG. 3 is similar to the pixel structure 200 of FIG. 2, and therefore the same elements are denoted by the same reference numerals and will not be described again. The pixel structure 300 of FIG. 3 differs from the pixel structure 200 of FIG. 2 in that the second sharing capacitor SC2 of the pixel structure 300 does not include the third electrode TdE. In contrast, the second electrode SE of the second sharing capacitor of the pixel structure 300 further includes an extension portion EP, and the extension portion EP is overlapped with the scan line SL. As described above, the design of the first sharing capacitor SC1 and the second sharing capacitor SC2 in the pixel structure 300 can be used to solve the problem of color shift and image sticking, and can simultaneously increase the display aperture ratio and achieve the display effect of the wide viewing angle.
綜上所述，本發明畫素結構包括有上電極TE以及下電極BE彼此重疊設置的第一分享電容器SC1，以及第一電極FE以及第二電極SE彼此重疊設置的第二分享電容器SC2。另外，第一畫素電極PE1與分享訊號線SgL部分重疊，而第二畫素電極PE2與掃描線SL部分重疊。因此，本發明的畫素結構設計可用以解決色偏以及影像殘留的問題，並且可同時提高顯示開口率並兼顧廣視角的顯示效果。In summary, the pixel structure of the present invention includes a first sharing capacitor SC1 having an upper electrode TE and a lower electrode BE overlapping each other, and a second sharing capacitor SC2 having a first electrode FE and a second electrode SE overlapped with each other. In addition, the first pixel electrode PE1 partially overlaps the shared signal line SgL, and the second pixel electrode PE2 partially overlaps the scan line SL. Therefore, the pixel structure design of the present invention can be used to solve the problem of color shift and image sticking, and can simultaneously increase the display aperture ratio and achieve the display effect of a wide viewing angle.
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明的精神和範圍內，當可作些許的更動與潤飾，故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.
100‧‧‧顯示面板
110‧‧‧畫素陣列基板
120‧‧‧對向基板
130‧‧‧顯示介質
200、300‧‧‧畫素結構
Sub1、Sub2‧‧‧基板
PA‧‧‧畫素陣列
EL‧‧‧電極層
SP‧‧‧間隙物
SL‧‧‧掃描線
DL‧‧‧資料線
SgL‧‧‧分享訊號線
TFT‧‧‧主動元件
G、Ga‧‧‧閘極
S、Sa‧‧‧源極
Da‧‧‧汲極
D1‧‧‧第一汲極
D2‧‧‧第二汲極
PE1‧‧‧第一畫素電極
PE2‧‧‧第二畫素電極
CW1‧‧‧第一接觸窗
CW2‧‧‧第二接觸窗
SWE‧‧‧分享開關元件
SC1‧‧‧第一分享電容器
SC2‧‧‧第二分享電容器
TE‧‧‧上電極
BE‧‧‧下電極
FE‧‧‧第一電極
SE‧‧‧第二電極
TdE‧‧‧第三電極
CEP‧‧‧共用電極圖案
EP‧‧‧延伸部100‧‧‧ display panel
110‧‧‧ pixel array substrate
120‧‧‧ opposite substrate
130‧‧‧Display media
200, 300‧‧‧ pixel structure
Sub1, Sub2‧‧‧ substrate
PA‧‧‧ pixel array
EL‧‧‧electrode layer
SP‧‧‧Interval
SL‧‧‧ scan line
DL‧‧‧ data line
SgL‧‧‧Shared Signal Line
TFT‧‧‧ active components
G, Ga‧‧‧ gate
S, Sa‧‧‧ source
Da‧‧‧汲
D1‧‧‧First bungee
D2‧‧‧second bungee
PE1‧‧‧ first pixel electrode
PE2‧‧‧second pixel electrode
CW1‧‧‧ first contact window
CW2‧‧‧second contact window
SWE‧‧‧Shared switching elements
SC1‧‧‧First sharing capacitor
SC2‧‧‧Second sharing capacitor
TE‧‧‧Upper electrode
BE‧‧‧ lower electrode
FE‧‧‧first electrode
SE‧‧‧second electrode
TdE‧‧‧ third electrode
CEP‧‧‧Common electrode pattern
EP‧‧‧Extension
圖1為本發明一實施例的顯示面板之剖面示意圖。 圖2為本發明一實施例的畫素結構示意圖。 圖3為本發明另一實施例的畫素結構示意圖。1 is a cross-sectional view of a display panel in accordance with an embodiment of the present invention. FIG. 2 is a schematic diagram of a pixel structure according to an embodiment of the present invention. FIG. 3 is a schematic diagram of a pixel structure according to another embodiment of the present invention.
200‧‧‧畫素結構 200‧‧‧ pixel structure
SP‧‧‧間隙物 SP‧‧‧Interval
SL‧‧‧掃描線 SL‧‧‧ scan line
DL‧‧‧資料線 DL‧‧‧ data line
SgL‧‧‧分享訊號線 SgL‧‧‧Shared Signal Line
TFT‧‧‧主動元件 TFT‧‧‧ active components
G、Ga‧‧‧閘極 G, Ga‧‧‧ gate
S、Sa‧‧‧源極 S, Sa‧‧‧ source
Da‧‧‧汲極 Da‧‧‧汲
D1‧‧‧第一汲極 D1‧‧‧First bungee
D2‧‧‧第二汲極 D2‧‧‧second bungee
PE1‧‧‧第一畫素電極 PE1‧‧‧ first pixel electrode
PE2‧‧‧第二畫素電極 PE2‧‧‧second pixel electrode
CW1‧‧‧第一接觸窗 CW1‧‧‧ first contact window
CW2‧‧‧第二接觸窗 CW2‧‧‧second contact window
SWE‧‧‧分享開關元件 SWE‧‧‧Shared switching elements
SC1‧‧‧第一分享電容器 SC1‧‧‧First sharing capacitor
SC2‧‧‧第二分享電容器 SC2‧‧‧Second sharing capacitor
TE‧‧‧上電極 TE‧‧‧Upper electrode
BE‧‧‧下電極 BE‧‧‧ lower electrode
FE‧‧‧第一電極 FE‧‧‧first electrode
SE‧‧‧第二電極 SE‧‧‧second electrode
TdE‧‧‧第三電極 TdE‧‧‧ third electrode
CEP‧‧‧共用電極圖案 CEP‧‧‧Common electrode pattern
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