TWI789673B - Sensing device substrate and display apparatus having the same - Google Patents

Abstract

A sensing device substrate includes a substrate, a sensing device and a first insulating layer. The sensing device is disposed on the substrate and includes a first electrode, a sensing layer and a second electrode. The first electrode is disposed on the substrate. The sensing layer is disposed on the first electrode. The second electrode is disposed on the sensing layer, contacts with the sensing layer and has a first opening. The first insulating layer is disposed on the second electrode and contacts with the sensing layer through the first opening. A display apparatus including the sensing device substrate described above is also provided.

Description

Sensing element substrate and display device including same

The present invention relates to a sensing element substrate, and in particular to a display device including the sensing element substrate.

The development of display devices is changing with each passing day, especially the full-screen design has become the mainstream of small and medium-sized screen specifications. In order to achieve a full screen, the fingerprint recognition function is integrated into the screen display iFP (in-cell Fingerprint Sensing) is its key technology, and the full-screen non-fixed-point fingerprint recognition function is expected to support a variety of applications, improving user experience and Increase the added value of the panel, for the current key development projects.

In terms of practical application requirements, the sensing element of iFP needs to be equipped with a light collimation design to overcome the interference of reflected light from adjacent peaks/valleys of fingerprints caused by the thickness of the cover glass. Therefore, a light-shielding layer with openings is usually provided on the sensing element, and the opening of the light-shielding layer in the cover is used to limit the light-receiving angle of the sensing element, so as to realize the light collimation design. However, disposing the light-shielding layer on the sensing element requires additional process steps and photomasks, resulting in increased cost and reduced yield.

The invention provides a sensing element substrate with simplified structure and reduced cost.

The invention provides a display device with simplified structure and reduced cost.

An embodiment of the present invention provides a substrate for a sensing element, including: a substrate, a sensing element, and a first insulating layer. The sensing element is located on the substrate, and the sensing element includes: a first electrode located on the substrate; a sensing layer located on the first electrode; and a second electrode located on the sensing layer and in contact with the sensing layer, and has a first electrode. Open your mouth. The first insulating layer is located on the second electrode and contacts the sensing layer through the first opening.

In an embodiment of the present invention, the above-mentioned second electrode is an opaque electrode.

In an embodiment of the present invention, the above-mentioned first opening is less than or equal to 3 μm.

In an embodiment of the present invention, the above-mentioned sensing element further includes a second insulating layer, the second insulating layer is located between the second electrode and the first electrode, the second insulating layer has a second opening, and the second opening overlaps sensing layer.

In an embodiment of the present invention, the ratio of the diameter of the first opening to the diameter of the second opening is less than 1/2.

In an embodiment of the present invention, the above sensing element substrate further includes a first signal line and a second signal line disposed on the substrate, wherein the first electrode is electrically connected to one of the first signal line and the second signal line One, and the second electrode is electrically connected to the other one of the first signal line and the second signal line.

An embodiment of the present invention provides a substrate for a sensing element, including: a substrate, a sensing element, a first insulating layer, and a conductive layer. The sensing element is located on the substrate and includes: a first electrode located on the substrate; a sensing layer located on the first electrode; and a second electrode located on the sensing layer and having a first opening. The first insulating layer is located on the second electrode. The conductive layer is located on the first insulating layer and has a third opening, wherein the third opening overlaps the first opening.

In an embodiment of the present invention, the above-mentioned second electrode is an opaque electrode.

In an embodiment of the present invention, the above-mentioned third opening is larger than the first opening.

In an embodiment of the present invention, the above-mentioned conductive layer overlaps the second electrode.

In an embodiment of the present invention, the above-mentioned conductive layer is electrically connected to the first electrode.

In an embodiment of the present invention, the above-mentioned sensing element further includes a second insulating layer, the second insulating layer is located between the second electrode and the first electrode, the second insulating layer has a second opening, and the second opening overlaps sensing layer.

In an embodiment of the present invention, the above-mentioned third opening is smaller than the second opening.

An embodiment of the present invention provides a display device, including: a pixel array substrate; and the above sensing element substrate, wherein the sensing element substrate overlaps the pixel array substrate.

In an embodiment of the present invention, the above display device further includes a cover substrate, wherein the sensing element substrate is located between the pixel array substrate and the cover substrate.

In an embodiment of the present invention, the above-mentioned pixel array substrate includes a pixel electrode and a common electrode, and the conductive layer is the pixel electrode or the common electrode.

In an embodiment of the present invention, the above-mentioned second electrode overlaps the pixel electrode or the common electrode.

In an embodiment of the present invention, the above display device further includes a cover substrate, wherein the pixel array substrate is located between the sensing element substrate and the cover substrate.

In an embodiment of the present invention, the above-mentioned sensing element substrate further includes a light-adjusting structure, the light-adjusting structure is located between the sensing element and the pixel array substrate, and the light-adjusting structure has a fifth opening, and the fifth opening overlaps the first Open your mouth.

In an embodiment of the present invention, the above-mentioned fifth opening is larger than the first opening.

In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail together with the accompanying drawings.

FIG. 1A is a schematic top view of a sensing element substrate 100 according to an embodiment of the present invention. FIG. 1B is an enlarged schematic view of the sensing element 120 of the sensing element substrate 100 of FIG. 1A . Fig. 1C is a schematic cross-sectional view taken along the section line A-A' of Fig. 1B. Referring to FIGS. 1A to 1C , the sensing element substrate 100 includes a substrate 110 , a sensing element 120 and a first insulating layer 130 , and the sensing element 120 is located on the substrate 110 . The sensing element 120 includes a first electrode 121 , a sensing layer 122 and a second electrode 124 . The first electrode 121 is located on the substrate 110 . The sensing layer 122 is located on the first electrode 121 . The second electrode 124 is located on the sensing layer 122 and contacts the sensing layer 122 , and has a first opening O1. The first insulating layer 130 is located on the second electrode 124 and contacts the sensing layer 122 through the first opening O1.

In the sensing element substrate 100 according to an embodiment of the present invention, the second electrode 124 has a light-shielding function. Therefore, the sensing element substrate 100 does not need an additional light-shielding layer, and has a simplified structure and reduced cost. At the same time, the first opening O1 of the second electrode 124 can cooperate with the openings of other film layers to adjust the light receiving angle of the sensing layer 122 to provide light collimation effect.

Hereinafter, with reference to FIG. 1A to FIG. 1C , implementations of various elements and film layers of the sensing element substrate 100 will be continuously described, but the present invention is not limited thereto.

Referring to FIG. 1A , the sensor substrate 100 may further include scan lines GL and data lines DL, which are disposed on the substrate 110 for transmitting scan signals and data signals.

In this embodiment, the substrate 110 is a transparent substrate, and its material is, for example, a quartz substrate, a glass substrate, a polymer substrate or other suitable materials, but the present invention is not limited thereto. In addition to various film layers used to form the sensing element 120 , signal lines and other various film layers used to form switching elements, for example, may be disposed on the substrate 110 .

Based on the consideration of conductivity, the first electrode 121 and the second electrode 124 of the sensing element 120 are generally made of metal materials, such as molybdenum, aluminum, titanium, copper, gold, silver, or other conductive materials, or any two or more of the above. The stacking of materials, but the present invention is not limited thereto. In this embodiment, the second electrode 124 is an opaque electrode.

Please refer to FIG. 1B and FIG. 1C at the same time. In this embodiment, the sensing element 120 further includes a second insulating layer 123 . The second insulating layer 123 is located between the second electrode 124 and the first electrode 121 and has a second opening O2 , wherein the second opening O2 overlaps the sensing layer 122 . In some embodiments, the second insulating layer 123 is located on the substrate 110 , the first electrode 121 and the sensing layer 122 , and the second opening O2 of the second insulating layer 123 completely overlaps the sensing layer 122 . In some embodiments, the area of the second opening O2 is similar to the area of the sensing layer 122 . In this embodiment, the material of the sensing layer 122 is, for example, silicon-rich oxide (SRO) or other suitable materials.

In this embodiment, the first insulating layer 130 can, for example, planarize the upper surface of the sensing element substrate 100 to facilitate assembly or storage. The materials of the first insulating layer 130 and the second insulating layer 123 may include transparent insulating materials, such as silicon oxide, silicon nitride, silicon oxynitride, organic materials, acrylic materials, and siloxane materials. , polyimide (polyimide) material, epoxy resin (epoxy) material, etc., but the present invention is not limited thereto. The first insulating layer 130 and the second insulating layer 123 can also respectively have a single-layer structure or a multi-layer structure. The multi-layer structure, for example, a stack of any two or more layers of the above-mentioned insulating materials, can be combined and changed as required.

Hereinafter, another embodiment of the present invention will be described continuously. FIG. 2A is a schematic cross-sectional view of a sensing element substrate 100A according to an embodiment of the present invention. FIG. 2B is a schematic circuit diagram of the sensing element substrate 100A of FIG. 2A . In the following, with reference to FIG. 2A to FIG. 2B , the implementation of each element and film layer of the sensing element substrate 100A will be continued, and the element numbers and related contents used in the embodiment of FIG. 1A to FIG. 1C will be used, but the present invention is not based on This is the limit.

Please refer to FIG. 2A , compared with the sensing element substrate 100 of FIGS. 1A to 1C , the structure of the sensing element substrate 100A shown in FIG. 2A is different in that: the sensing element substrate 100A also includes an insulating layer I1 , an insulating layer I2, a first signal line SL1 and a second signal line SL2. The insulating layer I1 is located on the substrate 110, the first signal line SL1 and the second signal line SL2 are disposed on the insulating layer I1, and the insulating layer I2 is located between the first signal line SL1 and the first electrode 121 and between the second signal line SL2 and the first electrode 121. Between the first electrodes 121. The first electrode 121 is electrically connected to the first signal line SL1, and the second electrode 124 is electrically connected to the second signal line SL2, but the present invention is not limited thereto.

For example, in this embodiment, the second insulating layer 123 may have a via hole V1, the insulating layer I2 may have a via hole V2 and a via hole V3, and the first electrode 121 may be connected to the via hole V3 of the insulating layer I2. The first signal line SL1 and the second electrode 124 can be connected to the second signal line SL2 through the via hole V1 of the second insulating layer 123 and the via hole V2 of the insulating layer I2 .

2B, for example, in this embodiment, the first signal line SL1 can be coupled between the sensing element 120, the reset transistor TS and the read transistor TR, and the second signal line SL2 can be The driving signal SR_W is sent to the sensing element 120 . The reset transistor TS can receive the driving signal SR_R to make the first signal line SL1 return to the voltage VSS level. When the sensing element 120 performs sensing, the sensing element 120 begins to leak current and the voltage level on the first signal line SL1 drops. At this time, the driving signal SR_W from the second signal line SL2 can pass through the sensing element 120 The capacitance of the capacitor raises the voltage level on the first signal line SL1, thereby turning on the read transistor TR, so that the output signal SOUT can be read.

The size of the first opening O1 of the second electrode 124 should be small enough to have the effect of light collimation. Therefore, in this embodiment, the ratio of the diameter W1 of the first opening O1 to the diameter W2 of the second opening O2 may be less than 1/2, and the diameter W1 of the first opening O1 may be less than or equal to 3 μm.

FIG. 3 is a schematic cross-sectional view of a sensing element substrate 100B according to an embodiment of the present invention. Compared with the sensing element substrate 100A shown in FIG. 2 , the difference in the structure of the sensing element substrate 100B shown in FIG. 3 is that the first electrode 121 of the sensing element 120 is electrically connected to the second signal line. SL2, and the second electrode 124 is electrically connected to the first signal line SL1.

For example, in this embodiment, the second insulating layer 123 may also have a through hole V4, and the through hole V4 overlaps the through hole V3 of the insulating layer I2. The first electrode 121 can be connected to the second signal line SL2 through the via hole V2 of the insulating layer I2, and the second electrode 124 can be connected to the first signal line through the via hole V4 of the second insulating layer 123 and the via hole V3 of the insulating layer I2. Line SL1.

FIG. 4 is a schematic cross-sectional view of a display device 10 according to an embodiment of the present invention. In the following, the implementation of each element and film layer of the display device 10 will be described in conjunction with FIG. 4 , and the element numbers and related content used in the embodiment of FIG. 1 will be used, but the present invention is not limited thereto.

The display device 10 includes a sensing element substrate 100 and a pixel array substrate 200 , wherein the sensing element substrate 100 overlaps the pixel array substrate 200 . In this embodiment, the sensing element substrate 100 includes a substrate 110 , a sensing element 120 and a first insulating layer 130 , wherein the sensing element 120 is disposed between the substrate 110 and the first insulating layer 130 . The sensing element 120 includes a first electrode 121 , a sensing layer 122 , a second insulating layer 123 and a second electrode 124 . The structure of the sensing element 120 is similar to that shown in FIG. 1C , and will not be repeated here. The structure of the pixel array substrate 200 may be similar to the pixel array substrates 200A, 200B, 200C, and 200D described below.

In this embodiment, the display device 10 further includes a cover substrate 300 and a display medium 400, wherein the sensing element substrate 100 is located between the pixel array substrate 200 and the cover substrate 300, and the display medium 400 is located between the sensing element substrate 100 and the cover. Between the substrates 300.

The cover substrate 300 may be a filter substrate. For example, in this embodiment, the cover substrate 300 may include a substrate 310 , a light shielding layer 320 and a filter layer 330 . In some embodiments, the filter layer 330 may include red filter patterns, green filter patterns and blue filter patterns. The material of the light-shielding layer 320 may include black resin or light-shielding metal (eg, chromium) and other materials with low reflectivity and light transmittance.

In this embodiment, the light shielding layer 320 has a fourth opening O4, and the fourth opening O4 overlaps the first opening O1. The diameter W4 of the fourth opening O4 is greater than the diameter W1 of the first opening O1 . In this embodiment, the caliber W4 of the fourth opening O4 is smaller than the caliber W2 of the second opening O2, but it is not limited thereto. In other embodiments, it is possible that the caliber W4 of the fourth opening O4 is greater than or equal to the second opening Caliber W2 for O2. The combination of the first opening O1 and the fourth opening O4 can adjust the light receiving angle of the sensing layer 122 to realize the light collimation design, so that the sensing element substrate 100 has good fingerprint image contrast quality, and the display device 10 has a good image quality. Fingerprint recognition.

FIG. 5 is a schematic cross-sectional view of a display device 20 according to an embodiment of the present invention. In the following, the embodiment of the various components and film layers of the display device 20 will be described in conjunction with FIG. 5, and the component numbers and related contents used in the embodiment of FIG. 1A to FIG. 1C and FIG. limit.

The display device 20 includes a sensing element substrate 100C, a pixel array substrate 200A, a cover substrate 300 and a display medium 400 . The structure of the cover substrate 300 is similar to that shown in FIG. 4 , and will not be shown in detail and repeated here.

Referring to FIG. 5 , the pixel array substrate 200A includes a substrate 210 , a light-shielding layer SM, a switching element SW, a common electrode CE, a pixel electrode PE, and an insulating layer I4 . The substrate 210 can be a transparent substrate, and its material includes a quartz substrate, a glass substrate, a polymer substrate, etc., but the invention is not limited thereto.

The switching element SW includes a gate GE, a semiconductor layer CH, a source SE and a drain DE. The gate electrode GE overlaps the semiconductor layer CH, and the semiconductor layer CH is disposed between the buffer layer I3 and the insulating layer I1, and the material of the semiconductor layer CH may include silicon semiconductor materials (such as polysilicon, amorphous silicon, etc.), oxide semiconductor materials, Organic semiconductor materials. Specifically, the region where the semiconductor layer CH overlaps the gate GE can be regarded as the channel region of the switching element SW. In addition, the light-shielding layer SM is disposed between the substrate 210 and the buffer layer I3, and the layout area of the light-shielding layer SM can at least shield the channel area, so as to prevent the characteristics of the channel area from being affected by external light. The material of the light-shielding layer SM may include black resin or light-shielding metal (for example: chromium) and other materials with low reflectivity and light transmittance.

The source SE and the drain DE of the switch element SW are separated from each other, and the source SE and the drain DE respectively contact the semiconductor layer CH. The pixel electrode PE is electrically connected to the drain electrode DE. The switch element SW can be turned on or off by the signal transmitted by the scan line, and the signal transmitted by the data line can be transmitted to the pixel electrode PE when the switch element SW is turned on.

The source SE and the drain DE of the switching element SW may belong to the same film layer, and the materials of the source SE, the drain DE and the gate GE of the switching element SW may include metals with good conductivity, such as aluminum, molybdenum, titanium, etc. Metal, but the present invention is not limited thereto. In order to avoid unnecessary short circuits between the components, an insulating layer I1 is provided between the gate GE and the semiconductor layer CH, and between the film layer forming the source SE and the drain DE and the film layer forming the gate GE. An insulating layer I2 is formed, and an insulating layer I5 and an insulating layer I6 are provided between the film layer forming the source SE and the drain DE and the first electrode 121 . Although the gate GE in this embodiment is located above the semiconductor layer CH, the switching element SW is a top gate transistor. However, in other embodiments, the gate GE can also be located under the semiconductor layer CH, so that the switching element SW is a bottom gate transistor.

In this embodiment, the common electrode CE is disposed below the insulating layer I4, and the pixel electrode PE is disposed above the insulating layer I4 and is provided with a plurality of slits ST. In this way, when driven by an electric field, the pixel electrode PE The electric field formed with the common electrode CE can drive the display medium 400 through the slit ST in the pixel electrode PE, but the invention is not limited thereto. In other embodiments, the pixel electrode PE may be disposed below the insulating layer I4, and the common electrode CE may be disposed above the insulating layer I4 and configured with a plurality of slits ST. When driven by an electric field, the electric field formed between the pixel electrode PE and the common electrode CE can pass through the slit ST in the common electrode CE to drive the display medium 400 .

Compared with the sensing element substrate 100 shown in FIGS. 1A to 1C , the structure of the sensing element substrate 100C of the display device 20 shown in FIG. 5 is different in that: the sensing element substrate 100C includes a substrate 210 , The sensing element 120 and the first insulating layer 130 are located between the film layer forming the source SE and the drain DE of the switching element SW and the common electrode CE. That is to say, the substrate 210 of the pixel array substrate 200A can serve as the substrate of the sensing element substrate 100C at the same time. In some embodiments, the sensing element 120 may overlap the pixel electrode PE or the common electrode CE of the pixel array substrate 200A.

In this embodiment, the sensing element 120 and the switching element SW of the pixel array substrate 200A are located in different film layers. Therefore, the layout design of the sensing element 120 is not limited by the switching element SW and the scanning lines connected thereto. Or the layout design of the data line, therefore, the sensing element 120 can have greater flexibility in element layout design.

FIG. 6 is a schematic cross-sectional view of a display device 30 according to an embodiment of the present invention. Referring to FIG. 6 , the display device 30 includes a sensing element substrate 100D, a pixel array substrate 200B, a cover substrate 300 and a display medium 400 . The structure of the cover substrate 300 is similar to that shown in FIG. 4 , and will not be shown in detail and repeated here.

In this embodiment, the pixel array substrate 200B includes a substrate 210, a light-shielding layer SM, a switch element SW, a pixel electrode PE, a common electrode CE, an insulating layer I4, a flat layer 127, and an insulating layer 129, wherein the common electrode CE is disposed on A plurality of slits ST are disposed above the insulating layer I4, and the pixel electrodes PE are disposed below the insulating layer I4.

The sensing element substrate 100D includes: a substrate 210 , a sensing element 120A, a first insulating layer 130 and a conductive layer 140 . The sensing element 120A is located on the substrate 210 and includes: a first electrode 121, a sensing layer 122 and a second electrode 124A, wherein the first electrode 121 is located on the substrate 210, the sensing layer 122 is located on the first electrode 121, and the second The second electrode 124A is located on the sensing layer 122 and has a first opening O1. The first insulating layer 130 is on the second electrode 124A. The conductive layer 140 is located on the first insulating layer 130 and has a third opening O3, wherein the third opening O3 overlaps the first opening O1.

In the sensing element substrate 100D according to an embodiment of the present invention, the second electrode 124A has a light-shielding function. Therefore, the sensing element substrate 100D does not need an additional light-shielding layer, and has a simplified structure and reduced cost. In addition, the sensing element substrate 100D according to an embodiment of the present invention can reduce the area of the sensing layer 122 while maintaining the capacitance value of the sensing element 120A by utilizing the capacitance formed by the overlapping of the conductive layer 140 and the second electrode 124A, In order to reduce the dark current of the sensing element 120A, the light/dark current ratio of the sensing element 120A is increased, so that the sensing element 120A has good fingerprint image contrast quality.

In this embodiment, the sensing element 120A further includes a connecting portion 1243 , and the connecting portion 1243 is separated from the second electrode 124A. In this embodiment, the sensing element 120A further includes a second insulating layer 123 , and the second insulating layer 123 is located between the second electrode 124A and the first electrode 121 . The second insulating layer 123 has a second opening O2, and the second opening O2 overlaps the sensing layer 122 . In some embodiments, the second insulating layer 123 may have a via hole V5 , and the connection part 1243 may be connected to the first electrode 121 through the via hole V5 of the second insulating layer 123 . In some embodiments, the first electrode 121 may be connected to the first signal line SL1 through the via hole V3 in the insulating layer I2.

In this embodiment, the second electrode 124A and the first electrode 121 constitute the first capacitor E1 of the sensing element substrate 100D, that is, the sensing element substrate 100D includes the first capacitor E1, and the first capacitor E1 includes the second capacitor E1. The electrode 124A and the first electrode 121 . Specifically, the part of the second electrode 124A located in the second opening O2 can be defined as the sensing part 1241, and the part of the second electrode 124A located on the second insulating layer 123 can be defined as the extension part 1242, and the sensing layer 122 is sandwiched between the sensing part 1241 and the first electrode 121 , and the second insulating layer 123 is sandwiched between the extension part 1242 and the first electrode 121 . In some embodiments, the extension part 1242 surrounds the sensing part 1241 . When the thickness of the second insulating layer 123 is much greater than the thickness of the sensing layer 122 , the first capacitor E1 is mainly composed of the sensing portion 1241 of the second electrode 124A and the first electrode 121 .

The length ratio of the extension part 1242 of the second electrode 124A to the sensing part 1241 may be between 1/4 and 2. For example, in this embodiment, the ratio of the length Lb of the extension part 1242 to the length La of the sensing part 1241 is 1/2, that is, Lb/La=1/2, but the present invention is not limited thereto.

In this embodiment, the conductive layer 140 overlaps the second electrode 124A. The first insulating layer 130 is sandwiched between the conductive layer 140 and the second electrode 124A, and the conductive layer 140 and the second electrode 124A constitute the second capacitance E2 of the sensing element substrate 100D. That is to say, the sensing element substrate 100D further includes a second capacitor E2, and the second capacitor E2 includes the conductive layer 140 and the second electrode 124A. In some embodiments, the conductive layer 140 can be electrically connected to the first electrode 121 , that is, the conductive layer 140 is at the same potential as the first electrode 121 . Therefore, the sensing element substrate 100D includes a first capacitor E1 and a second capacitor E2, and the first capacitor E1 and the second capacitor E2 are connected in parallel.

The material of the conductive layer 140 can be an opaque conductive material, such as molybdenum, aluminum, titanium, copper, gold, silver, or other conductive materials, or a stack of any two or more of the above materials. In some embodiments, the material of the conductive layer 140 can be a transparent conductive material, such as an alloy, a nitride of a metal material, an oxide of a metal material, an oxynitride of a metal material, or other suitable materials, or a combination of the above-mentioned conductive materials. Stacked layers, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium gallium zinc oxide or other suitable oxides or stacked layers of at least two of the above, but the present invention is not limited to this.

In this embodiment, the aperture W2 of the second opening O2 can be reduced without changing the aperture W1 of the first opening O1, which is a part of the light collimation design, so as to reduce the area of the sensing layer 122, thereby reducing The dark current of the sensing element 120A can be increased to improve the light/dark current ratio of the sensing element 120A. Since the area of the sensing layer 122 decreases, the overlapping area between the sensing portion 1241 and the first electrode 121 becomes smaller, and the first capacitance E1 decreases. Therefore, the reduced capacitance value of the first capacitance E1 can be obtained by the conductive layer 140 and the second electrode. 124A to complement the second capacitor E2, so as not to affect the coupling efficiency of the sensing circuit.

In this embodiment, the third opening O3 of the conductive layer 140 overlaps the first opening O1 of the second electrode 124A and the second opening O2 of the second insulating layer 123, and the third opening O3 is larger than the first opening O1, and the third opening O3 is smaller than the second opening O2. The third opening O3 of the conductive layer 140 is larger than the first opening O1 of the second electrode 124A, so as to avoid affecting the light collimation effect of the first opening O1 .

In addition, in this embodiment, the first insulating layer 130 can have a via hole V6, and the conductive layer 140 can be connected to the connecting portion 1243 through the via hole V6 of the first insulating layer 130, so that the conductive layer 140 can be electrically connected to the second an electrode 121 . In this embodiment, the insulating layer 129 is located between the planar layer 127 and the insulating layer 14 . Specifically, in this embodiment, the planar layer 127 may have a via hole V7 and a via hole V8, the insulating layer 14 may have a via hole V9 and a via hole V10, and the insulating layer 129 may have a via hole V11 and a via hole V12, The via V9 overlaps the via V11 , the via V7 and the via V6 of the first insulating layer 130 , and the via V10 overlaps the via V12 and the via V8 . The conductive layer 140 can be connected to the common electrode CE through the via hole V8, the via hole V12, and the via hole V10; the common electrode CE can be connected to the connection part 1243 through the via hole V9, the via hole V11, the via hole V7, and the via hole V6; and the connection The part 1243 may be connected to the first electrode 121 through the via V5 in the second insulating layer 123 . In this way, the electrical connection between the conductive layer 140 and the first electrode 121 can be completed simultaneously during the process of forming the common electrode CE without adding an additional photomask.

FIG. 7 is a schematic cross-sectional view of a display device 40 according to an embodiment of the present invention. Compared with the display device 30 shown in FIG. 6, the difference in the structure of the display device 40 shown in FIG. Medium 400. The structure of the cover substrate 300 is similar to that shown in FIG. 4 , and will not be shown in detail and repeated here.

Compared with the pixel array substrate 200B shown in FIG. 6, the difference in the structure of the pixel array substrate 200C shown in FIG. , the pixel electrode PE, the common electrode CE and the insulating layer I4, wherein the common electrode CE is disposed below the insulating layer I4, and the pixel electrode PE is disposed above the insulating layer I4 and is configured with a plurality of slits ST.

Compared with the sensing element substrate 100D shown in FIG. 6, the difference in the structure of the sensing element substrate 100E shown in FIG. The insulating layer 130 and the conductive layer 140A, wherein the conductive layer 140A is the same film layer as the common electrode CE, and the conductive layer 140A may be a transparent conductive layer. The conductive layer 140A has a third opening O3, the third opening O3 overlaps the first opening O1, and the third opening O3 is larger than the first opening O1, so as to avoid affecting the light collimation effect of the first opening O1.

In this embodiment, the sensing element 120B includes a first electrode 121 , a sensing layer 122 , a second insulating layer 123 and a second electrode 124A, and the second electrode 124A includes a sensing portion 1241 and an extension portion 1242 . The first electrode 121 can be electrically connected to the source SE of the switching element SW through the via holes in the insulating layer I6 and the insulating layer I5 .

In this embodiment, the sensing element substrate 100E includes a first capacitor E1 and a second capacitor E2A. The first capacitor E1 includes the second electrode 124A and the first electrode 121 . The conductive layer 140A (or the common electrode CE) overlaps the second electrode 124A, and interposes the first insulating layer 130 between the second electrode 124A. The conductive layer 140A (or the common electrode CE) overlaps with the second electrode 124A to constitute the second capacitance E2A of the sensing element substrate 100E. In addition, the conductive layer 140A is electrically connected to the first electrode 121 , therefore, the conductive layer 140A is at the same potential as the first electrode 121 , and the first capacitor E1 is connected in parallel with the second capacitor E2A.

The conductive layer 140A can be electrically connected to the first electrode 121 via the pixel electrode PE. For example, in this embodiment, the conductive layer 140A can be connected to the pixel electrode PE through the via hole V10; the pixel electrode PE can pass through the via hole V9, the via hole V6 in the first insulating layer 130 and the second insulating layer The via V5 in 123 is connected to the first electrode 121 . In this way, the electrical connection between the conductive layer 140A and the first electrode 121 can be completed simultaneously during the process of forming the pixel electrode PE, and the conductive layer 140A is the common electrode CE, so the process steps of the sensing element substrate 100E can be simplified , and no additional mask is required. In addition, in this embodiment, the sensing element 120B and the switching element SW of the pixel array substrate 200C are located in different film layers, so the flexibility of element layout design can be increased.

In other embodiments, the pixel electrode PE may be disposed below the insulating layer I4, and the common electrode CE may be disposed above the insulating layer I4 and configured with a plurality of slits ST. In this case, the conductive layer 140A can be electrically connected to the first electrode 121 through the common electrode CE, and the conductive layer 140A is the pixel electrode PE.

FIG. 8A is a schematic cross-sectional view of a display device 50 according to an embodiment of the present invention. FIG. 8B is an enlarged schematic view of the region I of the sensing element substrate 100F of the display device 50 of FIG. 8A . In the following, the implementation of each component and film layer of the display device 50 will be described in conjunction with FIG. 8A to FIG. 8B , and the component numbers and related content used in the embodiment of FIG. 1 will be used, but the present invention is not limited thereto.

Referring to FIG. 8A , the display device 50 includes a sensing element substrate 100F, a pixel array substrate 200D and a cover substrate 300A, wherein the pixel array substrate 200D is located between the sensing element substrate 100F and the cover substrate 300A. In this embodiment, the pixel array substrate 200D includes a substrate 210 , a switch element SW, a pixel electrode PE and a light shielding layer SM. In some embodiments, the pixel array substrate 200D may be an organic light emitting element array substrate. In this embodiment, the cover substrate 300A includes a substrate 310 , a light shielding layer 320A and a filter layer 330 . In some embodiments, the light shielding layer 320A overlaps the switching element SW. In addition, the sensing element substrate 100F can be fixed on the substrate 210 by the adhesive layer AH, and the sensing element substrate 100F and the switching element SW are respectively located on opposite sides of the substrate 210 . In some embodiments, there may be a gap AG between the sensing element substrate 100F and the substrate 210 .

Please refer to FIG. 8B. In this embodiment, the sensing element substrate 100F includes the sensing element substrate 100 as shown in FIGS. 1A to 1C. The sensing element substrate 100 includes a substrate 110, a sensing element 120 and a first insulating layer 130 , the sensing element 120 is located between the substrate 110 and the first insulating layer 130 . In other embodiments, the sensing element substrate 100F may also include the sensing element substrate 100A as shown in FIG. 2A or the sensing element substrate 100B as shown in FIG. 3 .

In this embodiment, the sensing element substrate 100F further includes a dimming structure 150 disposed on the sensing element 120 , and the dimming structure 150 is located between the sensing element 120 and the pixel array substrate 200D.

The dimming structure 150 includes an insulating layer B1 , a metal layer M1 , a planar layer PL1 , an insulating layer B2 , a metal layer M2 , a planar layer PL2 , an insulating layer B3 , a metal layer M3 and a microlens structure ML. The metal layer M1 has a fifth opening O5, the metal layer M2 has a sixth opening O6, and the metal layer M3 has a seventh opening O7, and the fifth opening O5, the sixth opening O6, and the seventh opening O7 all overlap the first opening of the second electrode 124. Open O1. The microlens structure ML may be a lens structure with a thicker center than an edge, such as a symmetrical bi-convex lens, an asymmetric bi-convex lens, a plano-convex lens or a concave-convex lens. The microlens structure ML can improve light collimation, reduce light leakage and light mixing caused by scattered light or refracted light, and reduce light loss.

In this embodiment, the diameter W5 of the fifth opening O5 is larger than the diameter W1 of the first opening O1 of the conductive layer 140, and the diameter W5 of the fifth opening O5 is smaller than the diameter W6 of the sixth opening O6, and the diameter W6 of the sixth opening O6 smaller than the diameter W7 of the seventh opening O7. That is to say, the calibers of the seventh opening O7, the sixth opening O6, the fifth opening O5 and the first opening O1 decrease sequentially, and the diameters of the first opening O1, the fifth opening O5, the sixth opening O6 and the seventh opening O7 The central axes overlap. In this way, the light adjusting structure 150 can cooperate with the first opening O1 to adjust the light receiving angle of the sensing layer 122 to realize the light collimation design.

In summary, the sensing element substrate of the present invention utilizes the opaque second electrode having the first opening to provide light collimation, so that the sensing element substrate has a simplified structure and reduced cost. In addition, in the display device of the present invention, the first opening of the second electrode of the sensing element substrate can be matched with, for example, the fourth opening of the light-shielding layer of the cover substrate or the light-adjusting structure to adjust the light-receiving angle of the sensing layer, thereby realizing The light collimation effect makes the sensing element substrate have good fingerprint image contrast quality, and makes the display device have good fingerprint recognition.

Although the present invention has been disclosed above with the embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field may make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention should be defined by the scope of the appended patent application.

10, 20, 30, 40, 50: display device 100, 100A, 100B, 100C, 100D, 100E, 100F: sensing element substrate 110: Substrate 120, 120A, 120B: sensing elements 121: the first electrode 122: Sensing layer 123: Second insulating layer 124, 124A: second electrode 1241: Sensing unit 1242: Extension 1243: connection part 127: flat layer 129: insulation layer 130: the first insulating layer 140, 140A: conductive layer 150: dimming structure 200, 200A, 200B, 200C, 200D: pixel array substrate 210: Substrate 300, 300A: cover substrate 310: Substrate 320, 320A: shading layer 330: filter layer 400: display media A-A': hatching AG: Gap AH: Adhesive layer B1, B2, B3: insulating layer CE: common electrode CH: semiconductor layer DE: drain DL: data line E1: the first capacitor E2, E2A: the second capacitor GE: Gate GL: scan line I: area I1, I2, I4, I5, I6: insulating layer I3: buffer layer La, Lb: Length M1, M2, M3: metal layer ML: microlens structure O1: first opening O2: second opening O3: third opening O4: Fourth opening O5: fifth opening O6: sixth opening O7: Seventh opening PE: pixel electrode PL1, PL2: flat layer SE: source SL1: the first signal line SL2: Second signal line SM: Shading layer SOUT: output signal SR_R, SR_W: drive signal ST: slit SW: switching element TR: read transistor TS: reset transistor V1~V12: Through hole VSS: voltage W1, W2, W4, W5, W6, W7: Caliber

FIG. 1A is a schematic top view of a sensing element substrate 100 according to an embodiment of the present invention. FIG. 1B is an enlarged schematic view of the sensing element 120 of the sensing element substrate 100 of FIG. 1A . Fig. 1C is a schematic cross-sectional view taken along the section line A-A' of Fig. 1B. FIG. 2A is a schematic cross-sectional view of a sensing element substrate 100A according to an embodiment of the present invention. FIG. 2B is a schematic circuit diagram of the sensing element substrate 100A of FIG. 2A . FIG. 3 is a schematic cross-sectional view of a sensing element substrate 100B according to an embodiment of the present invention. FIG. 4 is a schematic cross-sectional view of a display device 10 according to an embodiment of the present invention. FIG. 5 is a schematic cross-sectional view of a display device 20 according to an embodiment of the present invention. FIG. 6 is a schematic cross-sectional view of a display device 30 according to an embodiment of the present invention. FIG. 7 is a schematic cross-sectional view of a display device 40 according to an embodiment of the present invention. FIG. 8A is a schematic cross-sectional view of a display device 50 according to an embodiment of the present invention. FIG. 8B is an enlarged schematic view of the region I of the sensing element substrate 100F of the display device 50 of FIG. 8A .

100: Sensing element substrate

110: Substrate

120: sensing element

121: the first electrode

122: Sensing layer

123: Second insulating layer

124: second electrode

130: the first insulating layer

A-A': hatching

O1: first opening

O2: second opening

Claims (17)

A sensing element substrate, comprising: a substrate; a sensing element located on the substrate, wherein the sensing element comprises: a first electrode located on the substrate; a sensing layer located on the first electrode; and a second electrode, located on the sensing layer and contacting the sensing layer, and having a first opening; and a first insulating layer, located on the second electrode, and contacting the sensing layer through the first opening layer, wherein the second electrode is an opaque electrode. The sensing element substrate as claimed in claim 1, wherein the first opening is less than or equal to 3 μm. The sensing element substrate as claimed in item 1, wherein the sensing element further includes a second insulating layer, the second insulating layer is located between the second electrode and the first electrode, and the second insulating layer has a a second opening, and the second opening overlaps the sensing layer. The sensing element substrate as claimed in claim 3, wherein the ratio of the diameter of the first opening to the diameter of the second opening is less than 1/2. The sensing element substrate as described in claim 1, further comprising a first signal line and a second signal line disposed on the substrate, wherein the first electrode is electrically connected to One of the first signal line and the second signal line, and the second electrode is electrically connected to the other one of the first signal line and the second signal line. A sensing element substrate, comprising: a substrate; a sensing element located on the substrate, wherein the sensing element comprises: a first electrode located on the substrate; a sensing layer located on the first electrode; and a second electrode located on the sensing layer and having a first opening; a first insulating layer located on the second electrode; and a conductive layer located on the first insulating layer and having a first opening Three openings, wherein the third opening overlaps the first opening, wherein the conductive layer overlaps the second electrode. The sensing element substrate as claimed in claim 6, wherein the second electrode is an opaque electrode. The sensing element substrate as claimed in claim 6, wherein the third opening is larger than the first opening. The sensing element substrate as claimed in claim 6, wherein the conductive layer is electrically connected to the first electrode. The sensing element substrate as claimed in item 6, wherein the sensing element further includes a second insulating layer, the second insulating layer is located between the second electrode and the first electrode, and the second insulating layer has a a second opening, and the second opening overlaps the sensing layer. The sensing element substrate as claimed in claim 10, wherein the third opening is smaller than the second opening. A display device, comprising: a pixel array substrate; the sensing element substrate as described in claim 6, overlapping the pixel array substrate; and a cover substrate, wherein the sensing element substrate is located between the pixel array substrate and the pixel array substrate between the cover substrates. The display device according to claim 12, wherein the pixel array substrate includes a pixel electrode and a common electrode, and the conductive layer is the pixel electrode or the common electrode. The display device according to claim 13, wherein the second electrode overlaps the pixel electrode or the common electrode. A display device, comprising: a pixel array substrate; the sensing element substrate as described in claim 1 or 6, overlapping the pixel array substrate; and a cover substrate, wherein the pixel array substrate is located on the sensing element substrate and the cover substrate. The display device according to claim 15, wherein the sensing element substrate further includes a light-adjusting structure, the light-adjusting structure is located between the sensing element and the pixel array substrate, and the light-adjusting structure has a fifth opening, the fifth opening overlaps the first opening. The display device as claimed in claim 16, wherein the fifth opening is larger than the first opening.

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