CN113435382B

CN113435382B - Sensing device

Info

Publication number: CN113435382B
Application number: CN202110767713.0A
Authority: CN
Inventors: 高逸群; 吕诗桦; 丘兆仟
Original assignee: AU Optronics Corp
Current assignee: AU Optronics Corp
Priority date: 2020-08-17
Filing date: 2021-07-07
Publication date: 2023-04-18
Anticipated expiration: 2041-07-07
Also published as: CN113435382A

Abstract

A sensing device comprises a sensing structure layer, a first organic layer, a first shading pattern, a second organic layer, a second shading pattern, a third organic layer, a third shading pattern and a plurality of micro lenses. The first organic layer is located on the sensing structure layer and has a first opening. The first light-shielding pattern is on the first organic layer. The first organic layer is located on the first shading pattern and provided with a second opening, wherein the overlapping rate of the projection of the second opening and the first opening on the substrate along the normal direction of the substrate is less than 10%. The second light-shielding pattern is on the second organic layer. The third organic layer is positioned on the second light-shielding pattern. The third light-shielding pattern is on the third organic layer. A plurality of microlenses is located on the third organic layer.

Description

Sensing device

Technical Field

The present invention relates to a sensing device, and more particularly, to a fingerprint sensing device.

Background

The current trend of portable electronic devices equipped with biometric systems (e.g., fingerprint or iris) is toward full-screen or ultra-narrow bezel, and therefore, in recent years, off-screen optical sensors have been applied to portable electronic devices. The optical sensor under the screen is used for arranging the micro optical imaging device below the screen of the portable electronic device and acquiring an image of an object pressed above the screen through a part of light-transmitting areas of the screen. Taking the finger print sensor under the screen as an example, the finger print sensor generally comprises a sensing structure layer and an optical mechanical structure layer arranged above the sensing structure layer, wherein the optical mechanical structure layer is required to be designed with a certain thickness as a focal length due to the micro lens, so that the optical mechanical structure layer comprises a plurality of thick film structures which are stacked mutually; however, the thick film structure itself has a large stress, which causes the fingerprint sensor to warp after being formed, which may adversely affect subsequent processes such as cutting the fingerprint sensor or bonding the fingerprint sensor to the display panel.

Disclosure of Invention

The invention provides a sensing device which can solve the problem of warping caused by a multilayer structure.

The sensing device comprises a sensing structure layer, a first organic layer, a first shading pattern, a second organic layer, a second shading pattern, a third organic layer, a third shading pattern and a plurality of micro lenses. The sensing structure layer is located on the substrate and includes a plurality of sensing units, a scan line and a readout line. The first organic layer is located on the sensing structure layer and has a plurality of first openings. The first light-shielding pattern is located on the first organic layer and defines a first light-passing area, wherein the first light-passing area corresponds to the sensing elements of the plurality of sensing units. The first organic layer is located on the first shading pattern and provided with a second opening, wherein the overlapping rate of the projection of the second opening and the first opening on the substrate along the normal direction of the substrate is less than 10%. The second light-shielding pattern is positioned on the second organic layer and defines a second light passing area, wherein the second light passing area corresponds to the first light passing area. The third organic layer is positioned on the second shading pattern. The third light-shielding pattern is located on the third organic layer and defines a third light-passing area, wherein the third light-passing area corresponds to the second light-passing area. A plurality of microlenses are located in the third light passing region.

In an embodiment of the invention, the sensing device further includes a filter layer and a fourth organic layer. The filter layer is located on the second shading pattern and formed in the second opening. The fourth organic layer is located on the filter layer and disposed between the second organic layer and the third organic layer.

In an embodiment of the invention, the fourth organic layer has a third opening, the third opening corresponds to the first opening, and a projection ratio of the third opening and the second opening on the substrate along a normal direction of the substrate is less than 10%.

In an embodiment of the invention, the fourth organic layer has a third opening, an overlapping rate of a projection of the third opening and the first opening on the substrate along a normal direction of the substrate is less than 10%, and an overlapping rate of a projection of the third opening and the second opening on the substrate along the normal direction of the substrate is less than 10%.

In an embodiment of the invention, an extending direction of the first opening and an extending direction of the second opening are substantially parallel to the second direction, and the first opening and the second opening respectively correspond to adjacent reading lines.

In an embodiment of the invention, an extending direction of the first opening, an extending direction of the second opening, and an extending direction of the third opening are substantially parallel to an extending direction of the readout line, and the first opening and the second opening correspond to adjacent readout lines respectively.

In an embodiment of the invention, an extending direction of the first opening and an extending direction of the second opening are substantially parallel to an extending direction of the scan line, and the first opening and the second opening correspond to adjacent scan lines respectively.

In an embodiment of the invention, the first openings include a first longitudinal opening and a first transverse opening, and the second openings include a second longitudinal opening and a second transverse opening, wherein an extending direction of the first longitudinal opening and an extending direction of the second longitudinal opening are substantially parallel to an extending direction of the reading lines, and the first longitudinal opening and the second longitudinal opening respectively correspond to adjacent reading lines, wherein an extending direction of the first transverse opening and an extending direction of the second transverse opening are substantially parallel to an extending direction of the scanning lines, and the first transverse opening and the second transverse opening respectively correspond to adjacent scanning lines.

In an embodiment of the invention, an extending direction of the first opening, an extending direction of the second opening, and an extending direction of the third opening are substantially parallel to an extending direction of the readout lines, and adjacent projections of the first opening, the second opening, and the third opening on the substrate along a normal direction of the substrate respectively correspond to adjacent three readout lines.

In an embodiment of the invention, the sensing device further includes a first inorganic layer and a second inorganic layer, the first inorganic layer is located between the first organic layer and the second organic layer, wherein the first light-shielding pattern is disposed on the first inorganic layer, and the second inorganic layer is located between the second organic layer and the third organic layer, wherein the second light-shielding pattern is disposed on the second inorganic layer.

In an embodiment of the invention, each of the plurality of sensing units includes an active device and a sensing device, wherein the active device is electrically connected to the sensing device.

In view of the above, in the sensing device of the present invention, the at least two organic layers are provided with the plurality of openings, and the overlapping rate of the projections of the openings of the adjacent organic layers on the substrate along the normal direction of the substrate is less than 10%, so that the stress of the original unpatterned organic layers can be reduced, and the effect of dispersing the stress can be achieved, thereby avoiding the problem of warpage due to the provision of the multi-layer structure in the sensing device of this embodiment.

Drawings

Fig. 1A is a schematic top view of a sensing device according to a first embodiment of the invention.

FIG. 1B is a cross-sectional view of the sensing device according to the cross-section line A1-A1' of FIG. 1A.

Fig. 2A is a schematic top view of a sensing device according to a second embodiment of the invention.

FIG. 2B is a cross-sectional view of the sensing device according to the cross-section line A2-A2' of FIG. 2A.

Fig. 3A is a schematic top view of a sensing device according to a third embodiment of the invention.

FIG. 3B is a cross-sectional view of the sensing device according to the cross-section line A3-A3' of FIG. 3A.

Fig. 4A is a schematic top view of a sensing device according to a fourth embodiment of the invention.

FIG. 4B is a cross-sectional view of the sensing device according to the cross-section line A4-A4' of FIG. 4A.

Fig. 5A is a schematic top view of a sensing device according to a fifth embodiment of the invention.

FIG. 5B is a cross-sectional view of the sensing device according to the cross-section line A5-A5' of FIG. 5A.

Fig. 6 is a schematic cross-sectional view of an electronic device according to an embodiment of the invention.

Description of reference numerals:

10: electronic device

100. 200, 300, 400, 500: sensing device

1000: display panel

e1: a first direction

e2: second direction

n: normal direction

A1-A1', A2-A2', A3-A3', A4-A4', A5-A5': cutting line

BM1, BM2, BM3: shading pattern

BP1, BP2: inorganic layer

CH: semiconductor layer

D: drain electrode

DL: reading line

F: finger(s)

FG: frame glue

FL: filter layer

G: grid electrode

GL: insulating layer between gates

L1: illuminating light beam

L2: sensing light beam

LE: light-emitting structure

LR1, LR2, LR3: light passing area

ML: micro-lens

O, OP1, OP2, OP3: opening of the container

PL1, PL2, PL3, PL4, PL5: organic layer

S: source electrode

SB: substrate

SC: sensing element

SC1: a first electrode

SC2: photosensitive layer

SC3: second electrode

And SE: sensing structure layer

SL: scanning line

SU: sensing unit

T: active component

Detailed Description

Fig. 1A is a schematic top view of a sensing device according to a first embodiment of the invention. FIG. 1B is a cross-sectional view of the sensing device according to the cross-section line A1-A1' of FIG. 1A.

Referring to fig. 1A and fig. 1B, the sensing device 100 of the present embodiment includes a substrate SB, a sensing structure layer SE, an organic layer PL2, a light-shielding pattern BM1, an organic layer PL3, a light-shielding pattern BM2, a filter layer FL, an organic layer PL4, an organic layer PL5, a light-shielding pattern BM3, and a plurality of microlenses ML.

In some embodiments, the substrate SB may be a flexible substrate or a rigid substrate. In some embodiments, the sensing structure layer SE may include the following components, but it should be noted that the invention is not limited thereto. The sensing structure layer SE may include a plurality of sensing units SU, a scan line SL, and a readout line DL, for example. In addition, the sensing structure layer SE may further include a power supply line (not shown), and the invention is not limited thereto. It is worth mentioning that a buffer layer (not shown) may be disposed between the substrate SB and the sensing structure layer SE, for example. The material of the buffer layer may be silicon oxide, silicon nitride, or a stacked layer of at least two of the above materials, which is not limited in the present invention.

In some embodiments, each of the plurality of sensing units SU includes an active element T and a sensing element SC, but the invention is not limited thereto. The active device T is located on the substrate SB, and includes a gate G, a semiconductor layer CH, a source S, and a drain D. The gate electrode G is provided corresponding to the semiconductor layer CH, for example, and an inter-gate insulating layer GL is provided therebetween. The source S and the drain D are disposed on the inter-gate insulating layer GL and partially contact the semiconductor layer CH. The scan line SL and the readout line DL are also disposed on the substrate SB, for example, wherein the scan line SL is electrically connected to the source S of the active device T, and the readout line DL is electrically connected to the drain D of the active device T to read the signal sensed by the sensing device SC. In the present embodiment, the scan lines SL extend along the first direction e1, the readout lines DL extend along the second direction e2, and the first direction e1 and the second direction e2 are staggered with each other. The scan line SL and the readout line DL belong to different layers, for example. In detail, in some embodiments, the scan line SL and the gate G belong to the same layer (a first metal layer), and the read line DL and the source S and the drain D belong to the same layer (a second metal layer). The method for forming the first metal layer is described below as an example, but it should be noted that the present invention is not limited thereto. First, a first metal material layer (not shown) may be globally formed on the substrate SB by pvd or mocvd. Next, a patterned photoresist material layer (not shown) is formed on the first metal material layer. Then, an etching process is performed on the first metal material layer by using the patterned photoresist layer as a mask to form the scan line SL and the gate G. In the present embodiment, the active device T is any bottom gate thin film transistor known to those skilled in the art. However, although the present embodiment is exemplified by a bottom gate type thin film transistor, the present invention is not limited thereto. In other embodiments, the active device T may also be a top gate thin film transistor or other suitable type of thin film transistor.

The sensing element SC is also located on the substrate SB, and includes a first electrode SC1, a photosensitive layer SC2, and a second electrode SC3. The first electrode SC1, the photosensitive layer SC2, and the second electrode SC3 are sequentially stacked on the substrate SB in this order, for example. In some embodiments, the area of the second electrode SC3 is larger than that of the photosensitive layer SC2, and the outlines of the first electrode SC1 and the second electrode SC3 may partially overlap. In the embodiment, the first electrode SC1, the readout line DL, the source S and the drain D belong to the same layer (the second metal layer), but the invention is not limited thereto. In other embodiments, the first electrode SC1 may be formed of another metal layer (a third metal layer). In some embodiments, the first and second electrodes SC1 and SC3 may comprise a light transmissive conductive material or a light opaque conductive material, depending on the use of the sensing device 100. In the present embodiment, the sensing device 100 can be used as an under-screen fingerprint sensor, so that light from the outside (e.g. light reflected by a fingerprint) passes through the second electrode SC3 and enters the photosensitive layer SC2, and based on this, the second electrode SC3 is made of a transparent conductive material. The photosensitive layer SC2 has a characteristic of converting light energy into electric energy to realize an optical sensing function. In some embodiments, the material of the photosensitive layer SC2 may include a silicon-rich material, which may be a silicon-rich oxide, a silicon-rich nitride, a silicon-rich oxynitride, a silicon-rich carbide, a silicon-rich oxycarbide, a hydrogenated silicon-rich oxide, a hydrogenated silicon-rich nitride, a hydrogenated silicon-rich carbide, or other suitable material or combination thereof.

In some embodiments, the sensing structure layer SE further includes an organic layer PL1. The organic layer PL1 is, for example, located on the active device T and the first electrode SC1 of the sensing device SC and covers the active device T. In some embodiments, the organic layer PL1 has an opening O exposing the first electrode SC1 of the sensing element SC, wherein the photosensitive layer SC2 is located in the opening O and contacts the first electrode SC1, and the second electrode SC3 is disposed on the organic layer PL1 and contacts the photosensitive layer SC 2. The organic layer PL1 is formed by, for example, spin coating. The material of the organic layer PL1 is, for example, an organic insulating material, which may be polyimide, polyester, benzocyclobutene (BCB), polymethyl methacrylate (PMMA), polyvinyl phenol (poly (4-vinylphenol), PVP), polyvinyl alcohol (PVA), polytetrafluoroethylene (PTFE), hexamethyldisiloxane (HMDSO), or a stacked layer of at least two of the foregoing materials, but the invention is not limited thereto. In the embodiment, the organic layer PL1 has a single-layer structure, but the invention is not limited thereto. In other embodiments, the organic layer PL1 may be a multilayer structure.

The organic layer PL2 is, for example, located on the organic layer PL1 of the sensing structure layer SE and covers the second electrode SC3 of the sensing element SC, wherein the organic layer PL2 has a first opening OP1. The organic layer PL2 is formed by, for example, spin coating. The material of the organic layer PL2 is, for example, an organic insulating material, which may be polyimide, polyester, benzocyclobutene, polymethyl methacrylate, polyvinyl phenol, polyvinyl alcohol, polytetrafluoroethylene, hexamethyldisiloxane, or a stacked layer of at least two of the above materials, but the invention is not limited thereto. In the embodiment, the organic layer PL2 has a single-layer structure, but the invention is not limited thereto. In other embodiments, the organic layer PL2 may be a multilayer structure. The organic layer PL2 has a plurality of first openings OP1 corresponding to, for example, regions where a part of the scan lines SL, a part of the read lines DL, or a combination thereof are disposed. In the present embodiment, the first opening OP1 corresponds to a region where a portion of the reading line DL is disposed, that is, the extending direction of the first opening OP1 is substantially parallel to the extending direction (the second direction e 2) of the reading line DL.

In some embodiments, the sensing device 100 of the present embodiment may further include an inorganic layer BP1. The inorganic layer BP1 is, for example, located on the organic layer PL2, and covers the top surface and sidewalls of the organic layer PL 2. In detail, a portion of the inorganic layer BP1 is disposed on the top surface of the organic layer PL2, and another portion of the inorganic layer BP1 is disposed conformally in the first opening OP1 to cover the sidewall of the organic layer PL2 and a portion of the organic layer PL1. The inorganic layer BP1 is formed by, for example, a physical vapor deposition method or a chemical vapor deposition method. In the present embodiment, the material of the inorganic layer BP1 may be silicon oxide, silicon nitride, silicon oxynitride, or a stacked layer of at least two of the above materials, but the invention is not limited thereto. In the embodiment, the inorganic layer BP1 has a single-layer structure, but the invention is not limited thereto. In other embodiments, the inorganic layer BP1 may be a multilayer structure.

The light-shielding pattern BM1 is located on the organic layer PL2, for example, and is used to define the light-passing region LR1. In detail, the material of the light-shielding pattern BM1 includes a light-shielding and/or reflective material, which may be a metal, an alloy, a nitride of the material, an oxide of the material, an oxynitride of the material, or other suitable light-shielding and/or reflective material. In some embodiments, the material of the light blocking pattern BM1 may be molybdenum, molybdenum oxide, or a stacked layer thereof. Accordingly, the light passing region LR1 can be defined by a region where the light shielding pattern BM1 is not provided. In addition, the inorganic layer BP1 may be disposed on the organic layer PL2 such that the light-shielding pattern BM1 is disposed on the inorganic layer BP1, as illustrated in the present embodiment, but it should be noted that the invention is not limited thereto. In other embodiments, if the light-shielding pattern BM1 is selected, it may be directly connected to the organic layer PL2, or the inorganic layer BP1 may not be disposed. The arrangement of the light shielding pattern BM1 can effectively prevent the stray light from being incident on the plurality of sensing units SU, so as to prevent the stray light from affecting the sensing result. In the present embodiment, the light passing region LR1 is disposed corresponding to the sensing element SC of the sensing unit SU, so that the sensing element SC can convert the external light passing through the light passing region LR1 into a corresponding electrical signal. In addition, in some embodiments, the region provided with the light shielding pattern BM1 may be used to shield an active element T (not shown in the drawings) of the sensing unit SU. In detail, the light-shielding pattern BM1 may be, for example, located above the active device T and at least shield the semiconductor layer CH of the active device T, so as to prevent light from the outside from irradiating the semiconductor layer CH, thereby preventing the active device T from generating a leakage current. The light-shielding pattern BM1 is formed by, for example, first forming a light-shielding pattern material layer (not shown) by sputtering or other methods. Next, a patterned photoresist material layer (not shown) is formed on the light-shielding pattern material layer. Then, the light-shielding pattern material layer is etched using the patterned photoresist layer as a mask to form a light-shielding pattern BM1. In addition, the light-shielding pattern BM1 of the present embodiment is also disposed in the first opening OP1, which can shield the light from the outside (e.g. the oblique light) and avoid the light leakage. Therefore, when the sensing device 100 of the present embodiment is used as an under-screen fingerprint sensor, for example, stray light interference caused by oblique light to the sensing unit SU can be avoided, thereby increasing the signal-to-noise ratio of light to obtain a clearer fingerprint image. In addition, it also avoids the distortion of the sensed image.

The organic layer PL3 is, for example, located on the inorganic layer BP1 and covers the light-shielding pattern BM1. The organic layer PL3 is formed, for example, by first forming an organic pattern material layer (not shown) by a spin coating method. Next, a patterned photoresist material layer (not shown) is formed on the organic pattern material layer. And finally, taking the patterned photoresist layer as a mask, and carrying out an etching process on the organic pattern material layer. The material of the organic layer PL3 is, for example, an organic insulating material, which may be polyimide, polyester, benzocyclobutene, polymethyl methacrylate, polyvinyl phenol, polyvinyl alcohol, polytetrafluoroethylene, hexamethyldisiloxane, or a stacked layer of at least two of the above materials, but the invention is not limited thereto. In the embodiment, the organic layer PL3 has a single-layer structure, but the invention is not limited thereto. In other embodiments, the organic layer PL3 may be a multilayer structure. In the present embodiment, the organic layer PL3 includes a plurality of second openings OP2. The second opening OP2 corresponds to, for example, a region where a part of the scan line SL, a part of the read line DL, or a combination thereof is disposed. In the present embodiment, the second opening OP2 corresponds to a region where a portion of the readout line DL is disposed, that is, the extending direction of the second opening OP2 is substantially parallel to the extending direction (the second direction e 2) of the readout line DL. In addition, in some embodiments, the overlapping ratio of the projections of the second opening OP2 and the first opening OP1 on the substrate SB along the normal direction n of the substrate SB is less than 10%. In the present embodiment, the projections of the second opening OP2 and the first opening OP1 on the substrate SB along the normal direction n of the substrate SB are not overlapped at all. Based on the above-mentioned setting relationship between the second opening OP2 and the first opening OP1, the projections of the second opening OP2 and the first opening OP1 on the substrate SB along the normal direction n of the substrate SB are arranged in a staggered manner, i.e. the second opening OP2 and the first opening OP1 correspond to the adjacent reading lines DL respectively. Based on this, the present embodiment can reduce the stress of the organic layer not patterned originally by disposing the organic layer PL3 having the second opening OP2 and making the second opening OP2 and the first opening OP1 have the above-mentioned disposing relationship, thereby achieving the effect of stress dispersion.

In some embodiments, the sensing device 100 of the present embodiment may further include an inorganic layer BP2. The inorganic layer BP2 is, for example, located on the organic layer PL3, and covers the top surface and the sidewalls of the organic layer PL 3. In detail, a portion of the inorganic layer BP2 is disposed on the top surface of the organic layer PL3, and another portion of the inorganic layer BP2 is conformally disposed in the second opening OP2 to cover the sidewall of the organic layer PL3 and a portion of the light-shielding pattern BM1. The inorganic layer BP2 is formed by, for example, a physical vapor deposition method or a chemical vapor deposition method. In some embodiments, the material of the inorganic layer BP2 may be silicon oxide, silicon nitride, silicon oxynitride, or a stacked layer of at least two of the above materials. In this embodiment, the material of the inorganic layer BP2 is silicon nitride. In the embodiment, the inorganic layer BP2 has a single-layer structure, but the invention is not limited thereto. In other embodiments, the inorganic layer BP2 may be a multilayer structure.

The light-shielding pattern BM2 is located on the organic layer PL3, for example, and is used to define the light-passing region LR2. In detail, the material of the light-shielding pattern BM2 includes a light-shielding and/or reflective material, which may be a metal, an alloy, a nitride of the material, an oxide of the material, an oxynitride of the material, or other suitable light-shielding and/or reflective materials. In some embodiments, the material of the light blocking pattern BM2 may be molybdenum, molybdenum oxide, or a stacked layer thereof. Accordingly, the light passing region LR2 can be defined by a region where the light shielding pattern BM2 is not provided. In addition, the inorganic layer BP2 may be disposed on the organic layer PL3 such that the light-shielding pattern BM2 is disposed on the inorganic layer BP2, as illustrated in the present embodiment, but it should be noted that the invention is not limited thereto. In other embodiments, if the light-shielding pattern BM2 is selected to be directly attached to the organic layer PL3, the inorganic layer BP2 may not be disposed. The arrangement of the light shielding pattern BM2 can effectively prevent the stray light from being incident on the plurality of sensing units SU, so as to prevent the stray light from affecting the sensing result. In the present embodiment, the light passage region LR2 is disposed corresponding to the light passage region LR1, that is, corresponding to the sensing element SC of the sensing unit SU, so that the sensing element SC can convert the external light passing through the light passage region LR2 and the light passage region LR1 into a corresponding electrical signal. The light-shielding pattern BM2 is formed by, for example, first forming a light-shielding pattern material layer (not shown) by sputtering or other methods. Next, a patterned photoresist material layer (not shown) is formed on the light-shielding pattern material layer. Then, the patterned photoresist layer is used as a mask to perform an etching process on the light-shielding material layer to form a light-shielding pattern BM2.

The filter layer FL is, for example, located on the inorganic layer BP2 and covers the light-shielding pattern BM2, but the invention is not limited thereto. In the present embodiment, the filter layer FL is also disposed in the second opening OP2. In some embodiments, the filter layer FL may provide a technical effect of filtering. In detail, in the present embodiment, the filter layer FL may be an infrared cut (IR-cut) filter layer. That is, when the sensing unit SU of the present embodiment converts visible light from the outside into an electrical signal, infrared light that cannot be seen by the naked eye is usually converted into an electrical signal, so that when the electrical signal is converted into an image for display, the displayed image is easily distorted or dispersed by the infrared light. Based on this, the present embodiment can avoid the problem by the arrangement of the filter layer FL. However, the invention is not limited thereto, and when the sensing unit SU of the embodiment converts the infrared light from the outside into the electrical signal, the filter layer FL of the embodiment may be an infrared light pass (IR pass) filter layer. In addition, in other embodiments, the filter layer FL may also be another kind of filter layer to have an anti-counterfeiting effect.

The organic layer PL4 is, for example, located on the filter layer FL. The organic layer PL4 is formed by, for example, spin coating. The material of the organic layer PL4 is, for example, an organic insulating material, which may be polyimide, polyester, benzocyclobutene, polymethyl methacrylate, polyvinyl phenol, polyvinyl alcohol, polytetrafluoroethylene, hexamethyldisiloxane, or a stacked layer of at least two of the above materials, but the invention is not limited thereto. In the embodiment, the organic layer PL4 has a single-layer structure, but the invention is not limited thereto. In other embodiments, the organic layer PL4 may be a multilayer structure. In other embodiments, the organic layer PL4 may also have an opening, wherein the opening of the organic layer PL4 and the projection of the lower second opening OP2 on the substrate SB along the normal direction n of the substrate SB are arranged in a staggered manner, thereby achieving the effect of stress dispersion.

The organic layer PL5 is located on the organic layer PL4, for example. The organic layer PL5 is formed by, for example, spin coating. The material of the organic layer PL5 is, for example, an organic insulating material, which may be polyimide, polyester, benzocyclobutene, polymethyl methacrylate, polyvinyl phenol, polyvinyl alcohol, polytetrafluoroethylene, hexamethyldisiloxane, or a stacked layer of at least two of the above materials, but the invention is not limited thereto. In the embodiment, the organic layer PL5 has a single-layer structure, but the invention is not limited thereto. In other embodiments, the organic layer PL5 may be a multilayer structure. In some embodiments, an inorganic layer (not shown) may be disposed between the organic layers PL5 and PL4, but the present invention is not limited thereto.

The light-shielding pattern BM3 is located on the organic layer PL5, for example, and is used to define the light-passing region LR3. In detail, the material of the light-shielding pattern BM3 includes a light-shielding and/or reflective material, which may be a metal, an alloy, a nitride of the material, an oxide of the material, an oxynitride of the material, or other suitable light-shielding and/or reflective materials. In some embodiments, the material of the light blocking pattern BM3 may be molybdenum, molybdenum oxide, or a stacked layer thereof. Accordingly, the light passing region LR3 can be defined by a region where the light shielding pattern BM3 is not provided. In addition, an inorganic layer may be additionally disposed on the organic layer PL5 such that the light-shielding pattern BM3 is disposed on the inorganic layer, which is not limited in the present invention. The light-shielding pattern BM3 may be directly attached to the organic layer PL 5. The arrangement of the light-shielding pattern BM3 can effectively prevent the stray light from entering the plurality of sensing units SU, so as to prevent the stray light from affecting the sensing result. In the present embodiment, the light passage region LR3 is disposed corresponding to the light passage region LR2, that is, corresponding to the sensing element SC of the sensing unit SU, so that the sensing element SC can convert the light passing through the light passage region LR3, the light passage region LR2, and the outside of the light passage region LR1 into corresponding electrical signals. The light-shielding pattern BM3 is formed by, for example, first forming a light-shielding pattern material layer (not shown) by sputtering or other methods. Next, a patterned photoresist material layer (not shown) is formed on the light-shielding pattern material layer. Then, the light-shielding pattern material layer is etched using the patterned photoresist layer as a mask to form a light-shielding pattern BM3. In some embodiments, an inorganic layer (not shown) may be disposed between the light blocking pattern BM3 and the organic layer PL5, but the present invention is not limited thereto.

The plurality of microlenses ML are located on the organic layer PL5, for example, and are disposed in the third light passage region LR3. In detail, the plurality of microlenses ML are located in the third light passing region LR3 defined by the light shielding pattern BM3, and are disposed corresponding to the plurality of sensing units SU. For example, the plurality of microlenses ML are arranged in an array, and have a central axis (not shown) passing through the centers thereof. In some embodiments, the first opening OP1 and the second opening OP2 also have a central axis (not shown) passing through the center thereof, wherein the central axis of each microlens ML can be aligned with the central axis of one of the first opening OP1 and the second opening OP2, but the invention is not limited thereto. Therefore, the microlenses ML can be used to further improve the light collimation effect, so as to reduce the problems of light leakage and light mixing caused by scattered light or refracted light. In some embodiments, the plurality of microlenses ML can be symmetric biconvex lenses, asymmetric biconvex lenses, plano-convex lenses, or meniscus lenses, which is not limited thereto. In addition, each or more of the plurality of microlenses ML is disposed corresponding to one sensing unit SU, but the invention is not limited thereto.

In view of the above, in the embodiment, the at least two organic layers are provided with a plurality of openings, and the overlapping rate of the projections of the openings of the adjacent organic layers on the substrate along the normal direction of the substrate is less than 10%, so that the stress of the original unpatterned organic layers can be reduced to achieve the effect of dispersing the stress, thereby avoiding the problem of warpage of the sensing device of the embodiment caused by the provision of the multilayer structure. Furthermore, in the present embodiment, the opening is also provided with a light shielding pattern, so as to shield the light from the outside with a large angle (such as oblique light) and avoid the light leakage phenomenon, thereby improving the signal-to-noise ratio of the light to obtain a clearer image.

Fig. 2A is a schematic top view of a sensing device according to a second embodiment of the invention. FIG. 2B is a cross-sectional view of the sensing device according to the cross-section line A2-A2' of FIG. 2A. . It should be noted that, the embodiments shown in fig. 2A and 2B use the element numbers and part of the contents of the embodiments in fig. 1A and 1B, respectively, wherein the same or similar elements are denoted by the same or similar reference numbers, and the description of the same technical contents is omitted. For the description of the omitted portions, reference may be made to the description and effects of the foregoing embodiments, and the following embodiments are not repeated, and at least a portion of the description in the embodiment shown in fig. 2A and 2B that is not omitted may refer to the following contents.

Referring to fig. 2A and fig. 2B, the main difference between the sensing device 200 of the present embodiment and the sensing device 100 of the previous embodiment is: the organic layer PL4 in the sensing device 200 of the present embodiment further includes a plurality of third openings OP3. The third opening OP3 also corresponds to a region where a portion of the scan line SL, a portion of the readout line DL, or a combination thereof is disposed, for example. In the present embodiment, the third opening OP3 corresponds to a region where a part of the reading line DL is disposed, that is, the extending direction of the third opening OP3 is substantially parallel to the extending direction (the second direction e 2) of the reading line DL. In addition, in some embodiments, the overlapping ratio of the projections of the third opening OP3 and the second opening OP2 on the substrate SB along the normal direction n of the substrate SB is less than 10%. In the present embodiment, the projections of the third opening OP3 and the second opening OP2 on the substrate SB along the normal direction n of the substrate SB do not overlap at all. Further, the third opening OP3 corresponds to the first opening OP1, for example. In some embodiments, projections of the third opening OP3 and the first opening OP1 on the substrate SB along the normal direction n of the substrate SB may overlap each other. Based on the above-mentioned setting relationship among the first opening OP1, the second opening OP2 and the third opening OP3, the projections of the third opening OP3 and the second opening OP2 on the substrate SB along the normal direction n of the substrate SB are arranged in a staggered manner, that is, the third opening OP3 and the second opening OP2 correspond to the adjacent reading lines DL, and the third opening OP3 and the first opening OP1 correspond to the same reading line DL.

Accordingly, in the present embodiment, the organic layer PL4 having the third opening OP3 is further disposed, and the second opening OP2 and the third opening OP3 have the above-mentioned disposing relationship, so that the stress of the organic layer not originally patterned can be further reduced, thereby achieving the effect of stress dispersion.

Fig. 3A is a schematic top view of a sensing device according to a third embodiment of the invention. FIG. 3B is a cross-sectional view of the sensing device according to the cross-section line A3-A3' of FIG. 3A. It should be noted that, the embodiments shown in fig. 3A and 3B use the element numbers and part of the contents of the embodiments in fig. 1A and 1B, respectively, wherein the same or similar elements are denoted by the same or similar reference numbers, and the description of the same technical contents is omitted. For the description of the omitted portions, reference may be made to the description and effects of the foregoing embodiments, and the following embodiments are not repeated, and at least a portion of the description in the embodiment shown in fig. 3A and 3B that is not omitted may refer to the following contents.

Referring to fig. 3A and fig. 3B, the main difference between the sensing device 300 of the present embodiment and the sensing device 100 of the previous embodiment is: the organic layer PL2 in the sensing device 300 of the present embodiment has the first opening OP1 corresponding to a region where a portion of the scan line SL is disposed, i.e., the extending direction of the first opening OP1 is substantially parallel to the extending direction (the first direction e 1) of the scan line SL. In addition, the second opening OP2 of the organic layer PL3 also corresponds to a region where a part of the scan line SL is disposed, that is, the extending direction of the second opening OP2 is substantially parallel to the extending direction (the first direction e 1) of the scan line SL. In addition, in some embodiments, the overlapping ratio of the projections of the first opening OP1 and the second opening OP2 on the substrate SB along the normal direction n of the substrate SB is less than 10%. In the present embodiment, the projections of the first opening OP1 and the second opening OP2 on the substrate SB along the normal direction n of the substrate SB do not overlap at all. Based on the setting relationship between the first opening OP1 and the second opening OP2, the projections of the first opening OP1 and the second opening OP2 on the substrate SB along the normal direction n of the substrate SB are arranged in a staggered manner, i.e., the first opening OP1 and the second opening OP2 correspond to the adjacent scan lines SL respectively.

In addition, in the present embodiment, each of the plurality of microlenses ML corresponds to three sensing elements SC, but it should be noted that the present invention is not limited thereto.

Therefore, in the present embodiment, the first opening OP1 and the second opening OP2 correspond to the adjacent scan lines SL, respectively, which can also reduce the stress of the original unpatterned organic layer, thereby achieving the effect of stress dispersion.

Fig. 4A is a schematic top view of a sensing device according to a fourth embodiment of the invention. FIG. 4B is a cross-sectional view of the sensing device according to the cross-section line A4-A4' of FIG. 4A. It should be noted that fig. 4A and 4B illustrate embodiments using the element numbers and partial contents of the embodiments of fig. 1A and 1B, respectively, wherein the same or similar elements are denoted by the same or similar reference numbers, and the description of the same technical contents is omitted. For the description of the omitted portions, reference may be made to the description and effects of the foregoing embodiments, and the following embodiments are not repeated, and at least some of the description of the embodiments shown in fig. 3A and 3B that is not omitted may refer to the subsequent contents.

Referring to fig. 4A and fig. 4B, the main differences between the sensing device 400 of the present embodiment and the sensing device 100 of the previous embodiment are: in the sensing device 400 of the present embodiment, the first opening OP1 of the organic layer PL2 includes a first vertical opening OP11 and a first horizontal opening OP12, and the second opening OP2 of the organic layer PL3 includes a second vertical opening OP21 and a second horizontal opening OP22. The first vertical aperture OP11 and the second vertical aperture OP21 correspond to, for example, a region where a part of the readout line DL is disposed, that is, the extending direction of the first vertical aperture OP11 and the second vertical aperture OP21 is substantially parallel to the extending direction (the second direction e 2) of the readout line DL. The first lateral openings OP12 and the second lateral openings OP22 correspond to, for example, regions where part of the scan lines SL are disposed, that is, the extending directions of the first lateral openings OP12 and the second lateral openings OP22 are substantially parallel to the extending direction (the first direction e 1) of the scan lines SL. In addition, in some embodiments, the overlapping rate of the projections of the first longitudinal opening OP11 and the second longitudinal opening OP21 on the substrate SB along the normal direction n of the substrate SB is less than 10%. In the present embodiment, the projections of the first longitudinal opening OP11 and the second longitudinal opening OP21 on the substrate SB along the normal direction n of the substrate SB do not overlap at all. Based on the arrangement relationship between the first longitudinal opening OP11 and the second longitudinal opening OP21, the projections of the first longitudinal opening OP11 and the second longitudinal opening OP21 on the substrate SB along the normal direction n of the substrate SB are arranged in a staggered manner, i.e., the first longitudinal opening OP11 and the second longitudinal opening OP21 correspond to the adjacent reading lines DL. In addition, in some embodiments, the overlapping ratio of the projections of the first lateral opening OP12 and the second lateral opening OP22 on the substrate SB along the normal direction n of the substrate SB is less than 10%. In the present embodiment, the projections of the first lateral opening OP12 and the second lateral opening OP22 on the substrate SB along the normal direction n of the substrate SB are not overlapped at all. Based on the arrangement relationship between the first lateral opening OP12 and the second lateral opening OP22, the first lateral opening OP12 and the second lateral opening OP22 are arranged in a staggered manner along the normal direction n of the substrate SB, i.e., the first lateral opening OP12 and the second lateral opening OP22 correspond to the adjacent scan lines SL.

Based on this, the first opening OP1 including the first longitudinal opening OP11 and the first lateral opening OP12 and the second opening OP2 including the second longitudinal opening OP21 and the second lateral opening OP22 are disposed, and the relationship between the first opening OP1 and the second opening OP2 can further reduce the stress of the original unpatterned organic layer, thereby achieving the effect of stress dispersion.

Fig. 5A is a schematic top view of a sensing device according to a second embodiment of the invention. FIG. 5B is a cross-sectional view of the sensing device according to the cross-section line A5-A5' of FIG. 5A. It should be noted that fig. 5A and 5B illustrate embodiments using the same or similar reference numbers and parts of the same contents in the embodiments of fig. 1A and 1B, respectively, and the description of the same technical contents is omitted. For the description of the omitted portions, reference may be made to the description and effects of the foregoing embodiments, and the following embodiments are not repeated, and at least a portion of the description in the embodiment shown in fig. 5A and 5B that is not omitted may refer to the following contents.

Referring to fig. 5A and fig. 5B, the main difference between the sensing device 500 of the present embodiment and the sensing device 100 of the previous embodiment is: the organic layer PL4 in the sensing device 500 of the present embodiment further includes a plurality of third openings OP3. The third opening OP3 also corresponds to a region where a portion of the scan line SL, a portion of the readout line DL, or a combination thereof is disposed, for example. In the present embodiment, the third opening OP3 corresponds to a region where a part of the reading line DL is disposed, that is, the extending direction of the third opening OP3 is substantially parallel to the extending direction (the second direction e 2) of the reading line DL. In addition, in some embodiments, the overlapping ratio of the projections of the third opening OP3 and the second opening OP2 on the substrate SB along the normal direction n of the substrate SB is less than 10%. In addition, the overlapping rate of the projection of the third opening OP3 and the first opening OP1 on the substrate SB along the normal direction n of the substrate SB is less than 10%. In the present embodiment, the third opening OP3, the first opening OP1 and the second opening OP2 do not overlap with each other at all along the normal direction n of the substrate SB. In detail, based on the arrangement relationship among the first opening OP1, the second opening OP2 and the third opening OP3, the projections of the first opening OP1, the second opening OP2 and the third opening OP3 on the substrate SB along the normal direction n of the substrate SB are arranged in a staggered manner, that is, the adjacent projections of the first opening OP1, the second opening OP2 and the third opening OP3 on the substrate SB along the normal direction n of the substrate SB correspond to the three adjacent reading lines DL.

Based on this, the organic layer PL4 having the third opening OP3 is further disposed in the embodiment, and the first opening OP1, the second opening OP2 and the third opening OP3 have the above-mentioned disposition relationship, so as to further reduce the stress of the organic layer not originally patterned, thereby achieving the effect of stress dispersion.

Referring to fig. 6, fig. 6 shows an electronic device 10. In some embodiments, the electronic device 10 may be an off-screen fingerprint identification device, such as a smart phone, a tablet computer, a notebook computer, or a touch-sensitive display device. The electronic device 10 of the present embodiment includes, for example, a display panel 1000 and a sensing device 100, wherein the display panel 1000 and the sensing device 100 can be bonded by a sealant FG, which is not limited by the invention. The display panel 1000 is, for example, adapted to provide an illumination light beam L1 to the finger F through the light emitting structure LE, and then reflect a sensing light beam L2 through the light emitting structure LE. In the embodiment, the display panel 1000 is an organic light-emitting diode (OLED) display panel, but the invention is not limited thereto. In other embodiments, the display panel 1000 may also be a liquid crystal display panel or other suitable display panel. The sensing device 100 is disposed below the display panel 1000, for example, to receive the sensing light beam L2 reflected by the finger F, so as to perform fingerprint identification.

In summary, in the sensing device of the present invention, the at least two organic layers are provided with a plurality of openings, and the overlapping rate of the projections of the openings of the adjacent organic layers on the substrate along the normal direction of the substrate is less than 10%, so that the stress of the original unpatterned organic layers can be reduced to achieve the effect of stress dispersion, thereby avoiding the problem of warpage due to the multilayer structure of the sensing device of this embodiment. Furthermore, the light-shielding pattern is disposed in the opening in the embodiment, so as to shield wide-angle light (such as oblique light) from the outside and avoid light leakage, thereby improving the signal-to-noise ratio of light to obtain a clearer image.

Claims

1. A sensing device, comprising:

the sensing structure layer is positioned on the substrate and comprises a plurality of sensing units, a scanning line and a reading line;

a first organic layer located on the sensing structure layer and having a first opening;

a first light blocking pattern on the first organic layer and defining a first light passing area corresponding to the sensing elements of the plurality of sensing units;

a second organic layer located on the first light-shielding pattern and having a second opening, wherein an overlapping rate of a projection of the second opening and the first opening on the substrate along a normal direction of the substrate is less than 10%;

a second light-shielding pattern on the second organic layer and defining a second light-passing area corresponding to the first light-passing area;

a third organic layer on the second light-shielding pattern;

a third light blocking pattern on the third organic layer and defining a third light passing area corresponding to the second light passing area; and

a plurality of microlenses located in the third light passing region.

2. The sensing device of claim 1, further comprising:

a filter layer on the second light-shielding pattern and formed in the second opening; and

and the fourth organic layer is positioned on the filter layer and is arranged between the second organic layer and the third organic layer.

3. The sensing device of claim 2, wherein the fourth organic layer has a third opening, the third opening corresponds to the first opening, and an overlap ratio of a projection of the third opening and the second opening on the substrate along a normal direction of the substrate is less than 10%.

4. The sensing device of claim 2, wherein the fourth organic layer has a third opening, and an overlap ratio of a projection of the third opening and the first opening on the substrate along a normal direction of the substrate is less than 10%, and an overlap ratio of a projection of the third opening and the second opening on the substrate along the normal direction of the substrate is less than 10%.

5. The sensing device as claimed in claim 1, wherein an extending direction of the first opening and an extending direction of the second opening are substantially parallel to an extending direction of the read line, and the first opening and the second opening each correspond to an adjacent read line.

6. The sensing device as claimed in claim 3, wherein an extending direction of the first opening, an extending direction of the second opening and an extending direction of the third opening are substantially parallel to an extending direction of the read line, the first opening and the second opening each corresponding to an adjacent read line.

7. The sensing device as claimed in claim 1, wherein an extending direction of the first opening and an extending direction of the second opening are substantially parallel to an extending direction of the scan line, and the first opening and the second opening each correspond to an adjacent scan line.

8. The sensing device of claim 1, wherein the first opening comprises a first longitudinal opening and a first lateral opening and the second opening comprises a second longitudinal opening and a second lateral opening, wherein

The extending direction of the first longitudinal opening and the extending direction of the second longitudinal opening are substantially parallel to the extending direction of the reading line, and the first longitudinal opening and the second longitudinal opening respectively correspond to the adjacent reading line,

the extending direction of the first transverse opening and the extending direction of the second transverse opening are substantially parallel to the extending direction of the scanning lines, and the first transverse opening and the second transverse opening respectively correspond to the adjacent scanning lines.

9. The sensing device as claimed in claim 4, wherein an extending direction of the first opening, an extending direction of the second opening and an extending direction of the third opening are substantially parallel to an extending direction of the readout lines, and adjacent projections of the first opening, the second opening and the third opening on the substrate along a normal direction of the substrate respectively correspond to adjacent three of the readout lines.

10. The sensing device of claim 1, further comprising:

a first inorganic layer between the first organic layer and the second organic layer, wherein the first light blocking pattern is disposed on the first inorganic layer; and

a second inorganic layer between the second organic layer and the third organic layer, wherein the second light-shielding pattern is disposed on the second inorganic layer.

11. The sensing device as claimed in claim 1, wherein each of the plurality of sensing units comprises an active element and the sensing element, the active element being electrically connected to the sensing element.