TWI695205B - Image-sensing display device and image processing method - Google Patents

Image-sensing display device and image processing method Download PDF

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TWI695205B
TWI695205B TW107143146A TW107143146A TWI695205B TW I695205 B TWI695205 B TW I695205B TW 107143146 A TW107143146 A TW 107143146A TW 107143146 A TW107143146 A TW 107143146A TW I695205 B TWI695205 B TW I695205B
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light
emitting element
sensing
electrode
signal
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TW107143146A
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TW202009560A (en
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陳信學
劉品妙
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友達光電股份有限公司
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Priority to US16/502,050 priority patent/US10497756B1/en
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Abstract

An image-sensing display device and an image processing method are provided. The image-sensing display device includes a substrate, banks, and sensor units. The banks and the sensor units are disposed on the substrate. Each of the sensor units includes first to fourth light-emitting devices and a photo sensor. The first to fourth light-emitting devices are disposed around a corresponding bank. The first to third light-emitting devices include a red light-emitting device, a green light-emitting device, and a blue light-emitting device. The first and fourth light-emitting devices are light-emitting devices with same color. The photo sensor is disposed on the corresponding bank. The photo sensor includes a first electrode, a second electrode, and a photosensitive layer located between the first electrode and the second electrode. The first electrode and the second electrode extend from the photosensitive layer along a first direction and a second direction respectively.

Description

影像感測顯示裝置以及影像處理方法Image sensing display device and image processing method

本發明是有關於一種顯示裝置，且特別是有關於一種影像感測顯示裝置以及影像處理方法。 The invention relates to a display device, and in particular to an image sensing display device and an image processing method.

目前，市面上有許多具有指紋辨識裝置的個人用電子產品。舉例來說，為了保護使用者的隱私，許多智慧型手機會附有指紋辨識功能，防止其他人在未經使用者的同意下讀取智慧型手機中的資料。在一些具有指紋辨識功能的智慧型手機中，會利用光感測元件接收指紋反射的光線，藉此得到指紋辨識的功能。為了獲得窄邊框或無邊框的智慧型手機，許多廠商試著將光感測元件設置在螢幕的顯示區中。然而，設置於顯示區中的顯示裝置限制了畫素開口區的大小。 At present, there are many personal electronic products with fingerprint recognition devices on the market. For example, in order to protect the privacy of users, many smart phones are equipped with a fingerprint recognition function to prevent others from reading the data in the smart phone without the user's consent. In some smart phones with fingerprint recognition function, the light sensing element is used to receive the light reflected by the fingerprint, thereby obtaining the fingerprint recognition function. In order to obtain a smart phone with a narrow bezel or without a bezel, many manufacturers try to arrange the light sensing element in the display area of the screen. However, the display device provided in the display area limits the size of the pixel opening area.

本發明提供一種影像感測顯示裝置，能改善光感測元件影響畫素開口率的問題。 The invention provides an image sensing display device, which can improve the problem that the light sensing element affects the pixel aperture ratio.

本發明提供一種影像處理方法，能改善光感測元件影響畫素開口率的問題。 The invention provides an image processing method, which can improve the problem that the light sensing element affects the pixel aperture ratio.

本發明的至少一實施例提供一種影像感測顯示裝置。影像感測顯示裝置包括基板、多個擋牆以及多個感測單元。擋牆及感測單元位於基板上。各感測單元包括第一~第四發光元件以及光感測元件。第一~第四發光元件位於對應的擋牆周圍。第一~第三發光元件包括紅色發光元件、綠色發光元件以及藍色發光元件。第一發光元件與第四發光元件為相同顏色的發光元件。光感測元件位於對應的擋牆上。光感測元件包括第一電極、第二電極以及位於第一電極和第二電極之間的感測層。第一電極與第二電極分別自感測層往第一方向以及第二方向延伸。第一方向不同於第二方向。 At least one embodiment of the present invention provides an image sensing display device. The image sensing display device includes a substrate, a plurality of retaining walls, and a plurality of sensing units. The retaining wall and the sensing unit are located on the substrate. Each sensing unit includes first to fourth light emitting elements and light sensing elements. The first to fourth light emitting elements are located around the corresponding retaining wall. The first to third light emitting elements include red light emitting elements, green light emitting elements, and blue light emitting elements. The first light emitting element and the fourth light emitting element are light emitting elements of the same color. The light sensing element is located on the corresponding retaining wall. The light sensing element includes a first electrode, a second electrode, and a sensing layer between the first electrode and the second electrode. The first electrode and the second electrode extend from the sensing layer in the first direction and the second direction, respectively. The first direction is different from the second direction.

本發明的至少一實施例提供一種影像處理方法，包括提供影像感測顯示裝置、掃描待測物、運算光感測元件產生之多個訊號以及顯示運算訊號後產生的影像。影像感測顯示裝置包括基板、多個擋牆以及多個感測單元。擋牆及感測單元位於基板上。各感測單元包括第一~第四發光元件以及光感測元件。第一~第四發光元件位於對應的擋牆周圍。第一~第三發光元件包括紅色發光元件、綠色發光元件以及藍色發光元件。第一發光元件與第四發光元件為相同顏色的發光元件。光感測元件位於對應的擋牆上。光感測元件包括第一電極、第二電極以及位於第一電極和第二電極之間的感測層。第一電極與第二電極分別自感測層往第一方向 以及第二方向延伸。第一方向不同於第二方向。掃描待測物的方法包括：光感測元件接收第一發光元件被待測物反射的光；光感測元件接收第二發光元件被待測物反射的光；光感測元件接收第三發光元件被待測物反射的光；光感測元件接收第四發光元件被待測物反射的光。 At least one embodiment of the present invention provides an image processing method, including providing an image sensing display device, scanning an object to be measured, computing a plurality of signals generated by a light sensing element, and displaying an image generated after computing the signals. The image sensing display device includes a substrate, a plurality of retaining walls, and a plurality of sensing units. The retaining wall and the sensing unit are located on the substrate. Each sensing unit includes first to fourth light emitting elements and light sensing elements. The first to fourth light emitting elements are located around the corresponding retaining wall. The first to third light emitting elements include red light emitting elements, green light emitting elements, and blue light emitting elements. The first light emitting element and the fourth light emitting element are light emitting elements of the same color. The light sensing element is located on the corresponding retaining wall. The light sensing element includes a first electrode, a second electrode, and a sensing layer between the first electrode and the second electrode. The first electrode and the second electrode respectively go from the sensing layer to the first direction And the second direction extends. The first direction is different from the second direction. The method for scanning the object under test includes: the light sensing element receives light reflected by the object under test from the first light emitting element; the light sensing element receives light reflected by the object under test from the second light emitting element; and the third light emitting element receives light from the object under test The element is reflected by the object under test; the light sensing element receives the light reflected by the object under test by the fourth light emitting element.

基於上述，發光元件發出之光被待測物所反射，並被光感測元件接收。由於光感測元件位於擋牆上。因此，發光元件發出之光在抵達感測層前所需通過的層較少。藉此，光感測元件產生之光電流較好控制，且均勻性較佳，能夠減少色彩或亮度不均(MURA)的問題。此外，光感測元件形成於擋牆上，除了能降低對畫素的開口率造成影響外，也能避免光感測元件受到其他於形成光感測元件之前進行的製程的影響。 Based on the above, the light emitted by the light emitting element is reflected by the object to be measured and received by the light sensing element. Because the light sensing element is located on the retaining wall. Therefore, the light emitted by the light emitting element needs to pass through fewer layers before reaching the sensing layer. In this way, the photocurrent generated by the light sensing element is better controlled and the uniformity is better, which can reduce the problem of color or brightness unevenness (MURA). In addition, the light-sensing element is formed on the retaining wall, in addition to reducing the impact on the pixel aperture ratio, it can also prevent the light-sensing element from being affected by other processes performed before the light-sensing element is formed.

為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。 In order to make the above-mentioned features and advantages of the present invention more obvious and understandable, the embodiments are specifically described below in conjunction with the accompanying drawings for detailed description as follows.

10、10a~10f:影像感測顯示裝置 10.10a~10f: Image sensing display device

100:基板 100: substrate

110、110a~110d:擋牆 110, 110a~110d: retaining wall

120、120a~120d:感測單元 120, 120a~120d: sensing unit

132、134:反射層 132, 134: reflective layer

200a、200b:畫素控制元件 200a, 200b: pixel control element

A:主動元件 A: Active component

b:緩衝層 b: buffer layer

C1、C2:連接結構 C1, C2: connection structure

ch1、ch2:通道層 ch1, ch2: channel layer

D1~D6:發光元件 D1~D6: light emitting element

d1、d2:汲極 d1, d2: Drain

e1、e2:電極 e1, e2: electrode

H1~H4、O1~O3:開口 H1~H4, O1~O3: opening

h:高度差 h: height difference

i:光 i: light

GI:閘絕緣層 GI: gate insulation

g1、g2:閘極 g1, g2: gate

I1、I2:絕緣層 I1, I2: insulating layer

L:光感測元件 L: Light sensing element

OB:待測物 OB: test object

SM:遮光層 SM: shading layer

sr:感測層 sr: sensing layer

s1、s2:源極 s1, s2: source

T:開關元件 T: switching element

w1、w2:寬度 w1, w2: width

X1、X2、Z1~Z3:方向 X1, X2, Z1~Z3: direction

圖1A是依照本發明的一實施例的一種影像感測顯示裝置的上視示意圖。 FIG. 1A is a schematic top view of an image sensing display device according to an embodiment of the invention.

圖1B是圖1A線aa’的剖面示意圖。 Fig. 1B is a schematic cross-sectional view taken along line aa' of Fig. 1A.

圖1C是圖1A線bb’的剖面示意圖。 Fig. 1C is a schematic cross-sectional view taken along line bb' of Fig. 1A.

圖2是依照本發明的一實施例的一種影像處理方法的流程示 意圖。 2 is a flowchart of an image processing method according to an embodiment of the invention intention.

圖3A是依照本發明的一實施例的一種影像感測顯示裝置的上視示意圖。 3A is a schematic top view of an image sensing display device according to an embodiment of the invention.

圖3B是圖3A線cc’的剖面示意圖。 Fig. 3B is a schematic cross-sectional view taken along line cc' of Fig. 3A.

圖4是依照本發明的一實施例的一種影像感測顯示裝置的剖面示意圖。 4 is a schematic cross-sectional view of an image sensing display device according to an embodiment of the invention.

圖5是依照本發明的一實施例的一種影像感測顯示裝置的上視示意圖。 5 is a schematic top view of an image sensing display device according to an embodiment of the invention.

圖6是依照本發明的一實施例的一種影像感測顯示裝置的上視示意圖。 6 is a schematic top view of an image sensing display device according to an embodiment of the invention.

圖7是依照本發明的一實施例的一種影像感測顯示裝置的上視示意圖。 7 is a schematic top view of an image sensing display device according to an embodiment of the invention.

圖8是依照本發明的一實施例的一種影像感測顯示裝置的上視示意圖。 8 is a schematic top view of an image sensing display device according to an embodiment of the invention.

圖1A是依照本發明的一實施例的一種影像感測顯示裝置的上視示意圖。圖1B是圖1A線aa’的剖面示意圖。圖1C是圖1A線bb’的剖面示意圖。 FIG. 1A is a schematic top view of an image sensing display device according to an embodiment of the invention. Fig. 1B is a schematic cross-sectional view taken along line aa' of Fig. 1A. Fig. 1C is a schematic cross-sectional view taken along line bb' of Fig. 1A.

請參考圖1A與圖1B，影像感測顯示裝置10包括基板100、多個擋牆110以及多個感測單元120。為了方便說明，圖1A以一個擋牆110以及一個感測單元120為例。擋牆110及感測單 元120位於基板100上。感測單元120包括第一發光元件D1、第二發光元件D2、第三發光元件D3以及第四發光元件D4以及光感測元件L，且第一發光元件D1、第二發光元件D2、第三發光元件D3以及第四發光元件D4位於對應的擋牆110周圍。在本實施例中，感測單元120包括第一發光元件D1、第二發光元件D2、第三發光元件D3、第四發光元件D4、第五發光元件D5以及第六發光元件D6以及光感測元件L，且第一發光元件D1、第二發光元件D2、第三發光元件D3、第四發光元件D4、第五發光元件D5以及第六發光元件D6位於對應的擋牆110周圍。在本實施例中，第一發光元件D1、第二發光元件D2、第三發光元件D3、第四發光元件D4、第五發光元件D5以及第六發光元件D6為微型發光二極體(Micro LED)。 Please refer to FIGS. 1A and 1B, the image sensing display device 10 includes a substrate 100, a plurality of retaining walls 110 and a plurality of sensing units 120. For convenience of description, FIG. 1A takes a retaining wall 110 and a sensing unit 120 as examples. Retaining wall 110 and sensing sheet The element 120 is located on the substrate 100. The sensing unit 120 includes a first light emitting element D1, a second light emitting element D2, a third light emitting element D3 and a fourth light emitting element D4, and a light sensing element L, and the first light emitting element D1, the second light emitting element D2, the third The light emitting element D3 and the fourth light emitting element D4 are located around the corresponding retaining wall 110. In this embodiment, the sensing unit 120 includes a first light emitting element D1, a second light emitting element D2, a third light emitting element D3, a fourth light emitting element D4, a fifth light emitting element D5 and a sixth light emitting element D6 and light sensing Element L, and the first light-emitting element D1, the second light-emitting element D2, the third light-emitting element D3, the fourth light-emitting element D4, the fifth light-emitting element D5, and the sixth light-emitting element D6 are located around the corresponding retaining wall 110. In this embodiment, the first light-emitting element D1, the second light-emitting element D2, the third light-emitting element D3, the fourth light-emitting element D4, the fifth light-emitting element D5, and the sixth light-emitting element D6 are micro LEDs (Micro LED ).

第一發光元件D1與第四發光元件D4為相同顏色的發光元件。第二發光元件D2與第五發光元件D5為相同顏色的發光元件。第三發光元件D3與第六發光元件D6為相同顏色的發光元件。第一~第三發光元件D1~D3包括紅色發光元件、綠色發光元件以及藍色發光元件。在本實施例中，顏色相同的第一發光元件D1與第四發光元件D4位於擋牆110的相對兩側，顏色相同的第二發光元件D2與第五發光元件D5位於擋牆110的相對兩側，且顏色相同的第三發光元件D3與第六發光元件D6位於擋牆110的相對兩側。 The first light emitting element D1 and the fourth light emitting element D4 are light emitting elements of the same color. The second light emitting element D2 and the fifth light emitting element D5 are light emitting elements of the same color. The third light emitting element D3 and the sixth light emitting element D6 are light emitting elements of the same color. The first to third light emitting elements D1 to D3 include red light emitting elements, green light emitting elements, and blue light emitting elements. In this embodiment, the first light-emitting element D1 and the fourth light-emitting element D4 with the same color are located on opposite sides of the retaining wall 110, and the second light-emitting element D2 and the fifth light-emitting element D5 with the same color are located on opposite sides of the retaining wall 110 The third light-emitting element D3 and the sixth light-emitting element D6 with the same color are located on opposite sides of the retaining wall 110.

在本實施例中，第一發光元件D1、第二發光元件D2、 第三發光元件D3、第四發光元件D4、第五發光元件D5以及第六發光元件D6除了顏色之外，皆具有類似的構造，因此，圖1B以第一發光元件D1為例進行說明。 In this embodiment, the first light-emitting element D1, the second light-emitting element D2, The third light-emitting element D3, the fourth light-emitting element D4, the fifth light-emitting element D5, and the sixth light-emitting element D6 have similar structures except for the color. Therefore, FIG. 1B uses the first light-emitting element D1 as an example.

第一發光元件D1、第二發光元件D2、第三發光元件D3、第四發光元件D4、第五發光元件D5以及第六發光元件D6位於對應的擋牆110周圍。第一發光元件D1、第二發光元件D2、第三發光元件D3、第四發光元件D4、第五發光元件D5以及第六發光元件D6分別電性連接自對應的開關元件T。在本實施例中，第一發光元件D1、第二發光元件D2、第三發光元件D3、第四發光元件D4、第五發光元件D5以及第六發光元件D6可以藉由不同顆開關元件T分別驅動。 The first light-emitting element D1, the second light-emitting element D2, the third light-emitting element D3, the fourth light-emitting element D4, the fifth light-emitting element D5, and the sixth light-emitting element D6 are located around the corresponding retaining wall 110. The first light-emitting element D1, the second light-emitting element D2, the third light-emitting element D3, the fourth light-emitting element D4, the fifth light-emitting element D5, and the sixth light-emitting element D6 are electrically connected from the corresponding switching elements T, respectively. In this embodiment, the first light-emitting element D1, the second light-emitting element D2, the third light-emitting element D3, the fourth light-emitting element D4, the fifth light-emitting element D5 and the sixth light-emitting element D6 can be separated by different switching elements T drive.

圖1B繪示了第一發光元件D1所對應的開關元件T，由於第一發光元件D1、第二發光元件D2、第三發光元件D3、第四發光元件D4、第五發光元件D5以及第六發光元件D6分別對應之開關元件T具有類似的結構，因此僅以第一發光元件D1所對應的開關元件T進行說明。 FIG. 1B illustrates the switching element T corresponding to the first light-emitting element D1. Since the first light-emitting element D1, the second light-emitting element D2, the third light-emitting element D3, the fourth light-emitting element D4, the fifth light-emitting element D5, and the sixth The switch elements T corresponding to the light-emitting elements D6 respectively have a similar structure, so only the switch elements T corresponding to the first light-emitting element D1 will be described.

開關元件T包括閘極g1、通道層ch1、源極s1以及汲極d1。通道層ch1位於基板100上。 The switching element T includes a gate g1, a channel layer ch1, a source s1, and a drain d1. The channel layer ch1 is located on the substrate 100.

在本實施例中，通道層ch1與基板100之間還夾有遮光層SM，且遮光層SM與通道層ch1之間夾有緩衝層b。閘極g1電性連接至掃描線(未繪出)。閘極g1重疊於通道層ch1，且閘極g1與通道層ch1之間夾有閘絕緣層GI。第一絕緣層I1覆蓋閘極 g1。源極s1與汲極d1位於第一絕緣層I1上，且分別透過開口H1、H2而電性連接至通道層ch1。開口H1、H2至少貫穿第一絕緣層I1，在本實施例中，開口H1、H2貫穿閘絕緣層GI與第一絕緣層I1。 In this embodiment, a light shielding layer SM is also sandwiched between the channel layer ch1 and the substrate 100, and a buffer layer b is sandwiched between the light shielding layer SM and the channel layer ch1. The gate g1 is electrically connected to the scanning line (not shown). The gate electrode g1 overlaps the channel layer ch1, and a gate insulating layer GI is sandwiched between the gate electrode g1 and the channel layer ch1. The first insulating layer I1 covers the gate g1. The source electrode s1 and the drain electrode d1 are located on the first insulating layer I1, and are electrically connected to the channel layer ch1 through the openings H1 and H2, respectively. The openings H1 and H2 penetrate at least the first insulating layer I1. In this embodiment, the openings H1 and H2 penetrate the gate insulating layer GI and the first insulating layer I1.

雖然在本實施例中開關元件T是以頂部閘極型的薄膜電晶體為例，但本發明不以此為限。在其他實施例中，開關元件T也可以是底部閘極型或其他類型的薄膜電晶體。 Although the switching element T in this embodiment is a top gate type thin film transistor as an example, the invention is not limited to this. In other embodiments, the switching element T may also be a bottom gate type or other types of thin film transistors.

第二絕緣層I2覆蓋開關元件T。第一發光元件D1、第二發光元件D2、第三發光元件D3、第四發光元件D4、第五發光元件D5以及第六發光元件D6以及擋牆110位於第二絕緣層I2上。 The second insulating layer I2 covers the switching element T. The first light-emitting element D1, the second light-emitting element D2, the third light-emitting element D3, the fourth light-emitting element D4, the fifth light-emitting element D5, the sixth light-emitting element D6, and the barrier 110 are located on the second insulating layer I2.

在本實施例中，第一發光元件D1、第二發光元件D2、第三發光元件D3、第四發光元件D4、第五發光元件D5以及第六發光元件D6為水平式發光元件。以第一發光元件D1為例，第一發光元件D1連接至第一連接結構C1與第二連接結構C2，且第一連接結構C1與第二連接結構C2皆連接第一發光元件D1的上側。第一連接結構C1位於第二絕緣層I2的開口O1中，並電性連接第一發光元件D1與開關元件T的汲極d1。 In this embodiment, the first light emitting element D1, the second light emitting element D2, the third light emitting element D3, the fourth light emitting element D4, the fifth light emitting element D5, and the sixth light emitting element D6 are horizontal light emitting elements. Taking the first light-emitting element D1 as an example, the first light-emitting element D1 is connected to the first connection structure C1 and the second connection structure C2, and both the first connection structure C1 and the second connection structure C2 are connected to the upper side of the first light-emitting element D1. The first connection structure C1 is located in the opening O1 of the second insulating layer I2 and is electrically connected to the first light emitting element D1 and the drain d1 of the switching element T.

在本實施例中，第一發光元件D1、第二發光元件D2、第三發光元件D3、第四發光元件D4、第五發光元件D5以及第六發光元件D6分別藉由不同個第一連接結構C1而電性連接至不同顆開關元件T，第一發光元件D1、第二發光元件D2、第三發光元件D3、第四發光元件D4、第五發光元件D5以及第六發光元件 D6可以選擇性的藉由第二連接結構C2彼此電性相連，然而本發明不以此為限。 In this embodiment, the first light emitting element D1, the second light emitting element D2, the third light emitting element D3, the fourth light emitting element D4, the fifth light emitting element D5 and the sixth light emitting element D6 respectively have different first connection structures C1 is electrically connected to different switching elements T, the first light emitting element D1, the second light emitting element D2, the third light emitting element D3, the fourth light emitting element D4, the fifth light emitting element D5 and the sixth light emitting element D6 can be selectively electrically connected to each other through the second connection structure C2, but the invention is not limited thereto.

光感測元件L位於對應的擋牆110上。光感測元件L包括第一電極e1、第二電極e2以及位於第一電極e1和第二電極e2之間的感測層sr。感測層sr的寬度w1小於對應的擋牆110之頂面的寬度w2。 The light sensing element L is located on the corresponding retaining wall 110. The light sensing element L includes a first electrode e1, a second electrode e2, and a sensing layer sr located between the first electrode e1 and the second electrode e2. The width w1 of the sensing layer sr is smaller than the width w2 of the top surface of the corresponding retaining wall 110.

第一電極e1與第二電極e2分別自感測層sr往第一方向X1以及第二方向X2延伸。第一方向X1不同於第二方向X2。舉例來說，第一方向X1與第二方向X2之間夾90度、180度或其他角度。在其他實施例中，感測層sr與第一電極e1具有相同的圖案。換句話說，感測層sr與第一電極e1可以藉由相同的光罩定義出圖形，藉此能節省製程所需的光罩數量，但本發明不以此為限。 The first electrode e1 and the second electrode e2 extend from the sensing layer sr in the first direction X1 and the second direction X2, respectively. The first direction X1 is different from the second direction X2. For example, the first direction X1 and the second direction X2 are at 90 degrees, 180 degrees, or other angles. In other embodiments, the sensing layer sr and the first electrode e1 have the same pattern. In other words, the sensing layer sr and the first electrode e1 can be defined by the same mask, thereby saving the number of masks required for the manufacturing process, but the invention is not limited to this.

在本實施例中，影像感測顯示裝置10更包括第一反射層132。第一反射層132位於對應的擋牆110上，且第一反射層132與第一電極e1以及第二電極e2分開，藉此避免第一反射層132影響光感測元件L所產生的訊號。在本實施例中，第一反射層132與第一電極e1屬於同一圖案化導電層，藉此能減少製程所需的光罩數量。 In this embodiment, the image sensing display device 10 further includes a first reflective layer 132. The first reflective layer 132 is located on the corresponding retaining wall 110, and the first reflective layer 132 is separated from the first electrode e1 and the second electrode e2, thereby preventing the first reflective layer 132 from affecting the signal generated by the light sensing element L. In this embodiment, the first reflective layer 132 and the first electrode e1 belong to the same patterned conductive layer, thereby reducing the number of photomasks required in the manufacturing process.

請參考圖1A與圖1C，感測單元120更包括主動元件A。在本實施例中，主動元件A位於對應的擋牆110下方。藉此，第一發光元件D1、第二發光元件D2、第三發光元件D3、第四發光元件D4、第五發光元件D5以及第六發光元件D6彼此間的間距可 以較近，且能夠排列的較為對稱，以提升空間利用率。 1A and 1C, the sensing unit 120 further includes an active element A. In this embodiment, the active element A is located below the corresponding retaining wall 110. Thereby, the distance between the first light emitting element D1, the second light emitting element D2, the third light emitting element D3, the fourth light emitting element D4, the fifth light emitting element D5 and the sixth light emitting element D6 can be It is closer and can be arranged more symmetrically to improve space utilization.

主動元件A包括閘極g2、通道層ch2、源極s2以及汲極d2。通道層ch2位於基板100上。 The active device A includes a gate g2, a channel layer ch2, a source s2, and a drain d2. The channel layer ch2 is located on the substrate 100.

在本實施例中，通道層ch2與基板100之間還夾有遮光層SM，且遮光層SM與通道層ch2之間夾有緩衝層b。閘極g2重疊於通道層ch2，且閘極g2與通道層ch2之間夾有閘絕緣層GI。第一絕緣層I1覆蓋閘極g2。源極s2與汲極d2位於第一絕緣層I1上，且分別透過開口H3、H4而電性連接至通道層ch2。開口H3、H4至少貫穿第一絕緣層I1，在本實施例中，開口H3、H4貫穿閘絕緣層GI與第一絕緣層I1。 In this embodiment, a light shielding layer SM is also sandwiched between the channel layer ch2 and the substrate 100, and a buffer layer b is sandwiched between the light shielding layer SM and the channel layer ch2. The gate electrode g2 overlaps the channel layer ch2, and a gate insulating layer GI is sandwiched between the gate electrode g2 and the channel layer ch2. The first insulating layer I1 covers the gate g2. The source electrode s2 and the drain electrode d2 are located on the first insulating layer I1, and are electrically connected to the channel layer ch2 through the openings H3 and H4, respectively. The openings H3 and H4 penetrate at least the first insulating layer I1. In this embodiment, the openings H3 and H4 penetrate the gate insulating layer GI and the first insulating layer I1.

雖然在本實施例中主動元件A是以頂部閘極型的薄膜電晶體為例，但本發明不以此為限。在其他實施例中，主動元件A也可以是底部閘極型或其他類型的薄膜電晶體。 Although the active device A in this embodiment is a top gate type thin film transistor as an example, the invention is not limited to this. In other embodiments, the active element A may also be a bottom gate type or other types of thin film transistors.

光感測元件L的第一電極e1位於第二絕緣層I2的開口O2中，並電性連接主動元件A的汲極d2。光感測元件L的第二電極e2位於第二絕緣層I2的開口O3中，並電性連接訊號線CL。 The first electrode e1 of the light sensing element L is located in the opening O2 of the second insulating layer I2 and is electrically connected to the drain d2 of the active element A. The second electrode e2 of the light sensing element L is located in the opening O3 of the second insulating layer I2 and is electrically connected to the signal line CL.

在本實施例中，光感測元件L的第二電極e2、第一連接結構C1以及第二連接結構C2屬於同一圖案化導電層，藉此能減少製程所需的光罩數量。 In this embodiment, the second electrode e2, the first connection structure C1, and the second connection structure C2 of the light sensing element L belong to the same patterned conductive layer, thereby reducing the number of photomasks required in the manufacturing process.

在本實施例中，光感測元件L之感測層gr所在的位置高於第一發光元件D1、第二發光元件D2、第三發光元件D3、第四發光元件D4、第五發光元件D5以及第六發光元件D6所在的位 置，且高度差h介於1微米至25微米。 In this embodiment, the sensing layer gr of the light sensing element L is located higher than the first light emitting element D1, the second light emitting element D2, the third light emitting element D3, the fourth light emitting element D4, the fifth light emitting element D5 And the position of the sixth light-emitting element D6 The height difference h is between 1 micron and 25 microns.

第一發光元件D1發出之光i被待測物OB所反射，並被光感測元件L之感測層sr接收。由於光感測元件L位於擋牆110上。因此，第一發光元件D1發出之光i在抵達感測層sr前所需通過的層較少(至少不需要通過基板100至擋牆110之間的層)。藉此，光感測元件L產生之光電流較好控制，且均勻性較佳，能夠減少色彩或亮度不均(MURA)的問題。 The light i emitted by the first light emitting element D1 is reflected by the object to be measured OB and received by the sensing layer sr of the light sensing element L. Since the light sensing element L is located on the retaining wall 110. Therefore, the light i emitted by the first light-emitting element D1 needs to pass through fewer layers before reaching the sensing layer sr (at least the layer between the substrate 100 and the retaining wall 110 is not required). In this way, the photocurrent generated by the light sensing element L is better controlled, and the uniformity is better, which can reduce the problem of color or brightness unevenness (MURA).

此外，光感測元件L形成於擋牆110上，除了能降低對畫素的開口率造成影響外，也能避免光感測元件L受到其他於形成光感測元件L之前進行的製程的影響(例如形成開關元件T以及主動元件A的製程)。 In addition, the light-sensing element L is formed on the retaining wall 110, in addition to reducing the impact on the pixel aperture ratio, it can also prevent the light-sensing element L from being affected by other processes performed before the light-sensing element L is formed (For example, the process of forming the switching element T and the active element A).

圖2是依照本發明的一實施例的一種影像處理方法的流程示意圖。 2 is a schematic flowchart of an image processing method according to an embodiment of the invention.

請參考圖2與圖1A~圖1C，影像處理方法包括提供影像感測顯示裝置10、掃描待測物OB、訊號運算以及顯示影像。 Please refer to FIGS. 2 and 1A to 1C. The image processing method includes providing an image sensing and display device 10, scanning an object to be measured OB, signal calculation, and displaying an image.

掃描待測物OB的方法包括在不同的時間點亮第一發光元件D1、第二發光元件D2、第三發光元件D3、第四發光元件D4、第五發光元件D5以及第六發光元件D6，使光感測元件L分別接收第一發光元件D1、第二發光元件D2、第三發光元件D3、第四發光元件D4、第五發光元件D5以及第六發光元件D6被待側物OB反射的光線。 The method of scanning the object to be measured OB includes lighting the first light-emitting element D1, the second light-emitting element D2, the third light-emitting element D3, the fourth light-emitting element D4, the fifth light-emitting element D5, and the sixth light-emitting element D6 at different times, The light-sensing element L receives the first light-emitting element D1, the second light-emitting element D2, the third light-emitting element D3, the fourth light-emitting element D4, the fifth light-emitting element D5 and the sixth light-emitting element D6 reflected by the object OB Light.

舉例來說，掃描待測物OB的方法包括：點亮第一發光元 件D1，光感測元件L接收第一發光元件D1被待測物OB反射的光，並產生第一訊號。儲存第一訊號。關閉第一發光元件D1。點亮第二發光元件D2，光感測元件L接收第二發光元件D2被待測物OB反射的光，並產生第二訊號。儲存第二訊號。關閉第二發光元件D2。點亮第三發光元件D3，光感測元件L接收第三發光元件D3被待測物OB反射的光，並產生第三訊號。儲存第三訊號。關閉第三發光元件D3。點亮第四發光元件D4，光感測元件L接收第四發光元件D4被待測物OB反射的光，並產生第四訊號。儲存第四訊號。關閉第四發光元件D4。點亮第五發光元件D5，光感測元件L接收第五發光元件D5被待測物OB反射的光，並產生第五訊號。儲存第五訊號。關閉第五發光元件D5。點亮第六發光元件D6，光感測元件L接收第六發光元件D6被待測物OB反射的光，並產生第六訊號。儲存第六訊號。關閉第六發光元件D6。 For example, the method of scanning the object to be tested OB includes: lighting the first light-emitting element In the component D1, the light sensing element L receives the light reflected by the object to be measured OB of the first light emitting element D1, and generates a first signal. Save the first signal. The first light emitting element D1 is turned off. The second light emitting element D2 is lit, and the light sensing element L receives the light reflected by the object to be measured OB from the second light emitting element D2 and generates a second signal. Save the second signal. The second light emitting element D2 is turned off. The third light emitting element D3 is turned on, and the light sensing element L receives the light reflected by the object to be measured OB from the third light emitting element D3 and generates a third signal. Save the third signal. The third light emitting element D3 is turned off. The fourth light emitting element D4 is lit, and the light sensing element L receives the light reflected by the object to be measured OB from the fourth light emitting element D4 and generates a fourth signal. Store the fourth signal. The fourth light emitting element D4 is turned off. The fifth light emitting element D5 is turned on, and the light sensing element L receives the light reflected by the object to be measured OB from the fifth light emitting element D5 and generates a fifth signal. Save the fifth signal. The fifth light-emitting element D5 is turned off. Turning on the sixth light emitting element D6, the light sensing element L receives the light reflected by the object to be measured OB from the sixth light emitting element D6, and generates a sixth signal. Store the sixth signal. The sixth light emitting element D6 is turned off.

在掃描待測物OB之後，進行訊號運算。舉例來說，運算光感測元件L產生之第一~第六訊號。在訊號運算後，顯示運算訊號後產生的影像，例如顯示待測物OB的影像。在一些實施例中，第一發光元件D1、第二發光元件D2、第三發光元件D3、第四發光元件D4、第五發光元件D5以及第六發光元件D6位於顯示區中，在顯示影像時，第一發光元件D1、第二發光元件D2、第三發光元件D3、第四發光元件D4、第五發光元件D5以及第六發光元件D6中的一部分會被點亮，實際上被點亮的發光元件視影像的形狀以及顏色而定。換句話說，在一些實施例中，第一發光元件 D1、第二發光元件D2、第三發光元件D3、第四發光元件D4、第五發光元件D5以及第六發光元件D6除了可用於掃描待測物OB的影像，還可以用於顯示待測物OB的影像。 After scanning the object to be tested OB, signal calculation is performed. For example, the first to sixth signals generated by the light sensing element L are calculated. After the signal operation, the image generated after the operation signal is displayed, for example, the image of the object to be measured OB. In some embodiments, the first light-emitting element D1, the second light-emitting element D2, the third light-emitting element D3, the fourth light-emitting element D4, the fifth light-emitting element D5, and the sixth light-emitting element D6 are located in the display area, when displaying an image , A part of the first light-emitting element D1, the second light-emitting element D2, the third light-emitting element D3, the fourth light-emitting element D4, the fifth light-emitting element D5, and the sixth light-emitting element D6 will be lit, actually lit The light emitting element depends on the shape and color of the image. In other words, in some embodiments, the first light emitting element D1, the second light-emitting element D2, the third light-emitting element D3, the fourth light-emitting element D4, the fifth light-emitting element D5 and the sixth light-emitting element D6 can be used not only for scanning the image of the object to be measured OB, but also for displaying the object to be measured OB images.

在本實施例中，第一發光元件D1、第二發光元件D2、第三發光元件D3、第四發光元件D4、第五發光元件D5以及第六發光元件D6包括紅色發光元件、綠色發光元件以及藍色發光元件。在本實施例中，於掃描待測物OB時，不同的時間點亮不同顏色的發光元件，因此，影像感測顯示裝置10具有全彩掃描的功能。 In this embodiment, the first light-emitting element D1, the second light-emitting element D2, the third light-emitting element D3, the fourth light-emitting element D4, the fifth light-emitting element D5, and the sixth light-emitting element D6 include red light-emitting elements, green light-emitting elements, and Blue light emitting element. In this embodiment, when the object to be measured OB is scanned, the light-emitting elements of different colors are lit at different times. Therefore, the image sensing display device 10 has the function of full-color scanning.

在本實施例中，相同顏色的發光元件位於不同的位置。舉例來說，第一發光元件D1以及第四發光元件D4分別位於光感測元件L的兩側，第二發光元件D2以及第五發光元件D5分別位於光感測元件L的兩側，且第三發光元件D3以及第六發光元件D6分別位於光感測元件L的兩側。因此，相同顏色的發光元件發出之光以不同的入射角被待測物OB反射，藉此可以掃描到更清楚的影像。 In this embodiment, the light-emitting elements of the same color are located at different positions. For example, the first light emitting element D1 and the fourth light emitting element D4 are located on both sides of the light sensing element L, the second light emitting element D2 and the fifth light emitting element D5 are located on both sides of the light sensing element L, and the first The three light-emitting elements D3 and the sixth light-emitting element D6 are located on both sides of the light sensing element L, respectively. Therefore, the light emitted by the light-emitting elements of the same color is reflected by the object to be measured OB at different incident angles, whereby a clearer image can be scanned.

在一些實施例中，掃描代測物OB時，第一發光元件D1、第二發光元件D2、第三發光元件D3、第四發光元件D4、第五發光元件D5與第六發光元件D6分別以頻率f1驅動。於顯示運算訊號(例如第一~第六訊號)後產生的影像時，第一發光元件D1、第二發光元件D2、第三發光元件D3、第四發光元件D4、第五發光元件D5與第六發光元件D6中的至少部分是以頻率f2驅動，頻率f1大於等於頻率f2。在較高的頻率f1下掃描可以減少掃描所需 的時間，在較低的頻率f2下顯示影像能節省所需耗費的電源。 In some embodiments, when the substitute object OB is scanned, the first light-emitting element D1, the second light-emitting element D2, the third light-emitting element D3, the fourth light-emitting element D4, the fifth light-emitting element D5, and the sixth light-emitting element D6 respectively Driven at frequency f1. When displaying images generated after computing signals (such as the first to sixth signals), the first light-emitting element D1, the second light-emitting element D2, the third light-emitting element D3, the fourth light-emitting element D4, the fifth light-emitting element D5 and the first At least part of the six light-emitting elements D6 is driven at a frequency f2, and the frequency f1 is greater than or equal to the frequency f2. Scanning at a higher frequency f1 can reduce the scanning required Time, displaying images at a lower frequency f2 can save the required power consumption.

在一些實施例中，掃描代測物OB時，相同顏色的發光元件同時點亮。舉例來說，掃描待測物OB的方法包括：同時點亮第一發光元件D1與第四發光元件D4，光感測元件L接收第一發光元件D1與第四發光元件D4被待測物OB反射的光，並產生第一訊號。儲存第一訊號。關閉第一發光元件D1與第四發光元件D4。同時點亮第二發光元件D2與第五發光元件D5，光感測元件L接收第二發光元件D2與第五發光元件D5被待測物OB反射的光，並產生第二訊號。儲存第二訊號。關閉第二發光元件D2與第五發光元件D5。同時點亮第三發光元件D3與第六發光元件D6，光感測元件L接收第三發光元件D3與第六發光元件D6被待測物OB反射的光，並產生第三訊號。儲存第三訊號。關閉第三發光元件D3與第六發光元件D6。 In some embodiments, when the substitute object OB is scanned, the light-emitting elements of the same color light up at the same time. For example, the method of scanning the object-to-be-measured OB includes: simultaneously illuminating the first light-emitting element D1 and the fourth light-emitting element D4, and the light-sensing element L receiving the first light-emitting element D1 and the fourth light-emitting element D4 to-be-measured object OB The reflected light produces the first signal. Save the first signal. The first light emitting element D1 and the fourth light emitting element D4 are turned off. Simultaneously, the second light-emitting element D2 and the fifth light-emitting element D5 are turned on, and the light-sensing element L receives the light reflected by the object to be measured OB from the second light-emitting element D2 and the fifth light-emitting element D5, and generates a second signal. Save the second signal. The second light emitting element D2 and the fifth light emitting element D5 are turned off. Simultaneously, the third light-emitting element D3 and the sixth light-emitting element D6 are lit, and the light-sensing element L receives the light reflected by the third light-emitting element D3 and the sixth light-emitting element D6 from the object to be measured OB, and generates a third signal. Save the third signal. The third light emitting element D3 and the sixth light emitting element D6 are turned off.

在同一時間同時開啟兩個發光元件，可以進一步減少掃描所需之時間。 Turning on both light-emitting elements at the same time can further reduce the time required for scanning.

圖3A是依照本發明的一實施例的一種影像感測顯示裝置的上視示意圖。圖3B是圖3A線cc’的剖面示意圖。 3A is a schematic top view of an image sensing display device according to an embodiment of the invention. Fig. 3B is a schematic cross-sectional view taken along line cc' of Fig. 3A.

在此必須說明的是，圖3A和圖3B的實施例沿用圖1A~圖1C的實施例的元件標號與部分內容，其中採用相同或近似的標號來表示相同或近似的元件，並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例，在此不贅述。 It must be noted here that the embodiments of FIGS. 3A and 3B continue to use the element numbers and parts of the embodiments of FIGS. 1A to 1C, wherein the same or similar reference numbers are used to indicate the same or similar elements, and the same is omitted Description of technical content. For the description of the omitted parts, reference may be made to the foregoing embodiments, which will not be repeated here.

圖3A之影像感測顯示裝置10a與圖1A之影像感測顯示 裝置10的主要差異在於：影像感測顯示裝置10中，第一電極e1與第二電極e2分別自感測層sr往互相相反的第一方向X1以及第二方向X2延伸；影像感測顯示裝置10a，第一電極e1與第二電極e2分別自感測層sr往互相正交的第一方向X1以及第二方向X2延伸。 The image sensing display device 10a of FIG. 3A and the image sensing display of FIG. 1A The main difference of the device 10 is that: in the image sensing display device 10, the first electrode e1 and the second electrode e2 respectively extend from the sensing layer sr in mutually opposite first direction X1 and second direction X2; the image sensing display device 10a, the first electrode e1 and the second electrode e2 respectively extend from the sensing layer sr in a first direction X1 and a second direction X2 that are orthogonal to each other.

請參考圖3A和圖3B，在本實施例中，第一電極e1與第一反射層132相連，但本發明不以此為限。在其他實施例中，第一電極e1與第一反射層132分開。 Please refer to FIGS. 3A and 3B. In this embodiment, the first electrode e1 is connected to the first reflective layer 132, but the present invention is not limited thereto. In other embodiments, the first electrode e1 is separated from the first reflective layer 132.

在本實施例中，第一發光元件D1、第二發光元件D2、第三發光元件D3、第四發光元件D4、第五發光元件D5以及第六發光元件D6為垂直式發光元件。以第一發光元件D1為例，第一發光元件D1連接至第一連接結構C1以及第二連接結構C2，且第一連接結構C1與第二連接結構C2分別連接第一發光元件D1的下側與上側。在本實施例中，第一電極e1、第一反射層132與第一連接結構C1屬於同一圖案化導電層。在一些實施例中，第一連接結構C1為金屬，且第二連接結構C2為透明導電材料，藉此提升光線的利用率。 In this embodiment, the first light emitting element D1, the second light emitting element D2, the third light emitting element D3, the fourth light emitting element D4, the fifth light emitting element D5, and the sixth light emitting element D6 are vertical light emitting elements. Taking the first light-emitting element D1 as an example, the first light-emitting element D1 is connected to the first connection structure C1 and the second connection structure C2, and the first connection structure C1 and the second connection structure C2 are respectively connected to the lower side of the first light-emitting element D1 With the upper side. In this embodiment, the first electrode e1, the first reflective layer 132 and the first connection structure C1 belong to the same patterned conductive layer. In some embodiments, the first connection structure C1 is metal, and the second connection structure C2 is a transparent conductive material, thereby improving light utilization.

圖4是依照本發明的一實施例的一種影像感測顯示裝置的剖面示意圖。 4 is a schematic cross-sectional view of an image sensing display device according to an embodiment of the invention.

在此必須說明的是，圖4的實施例沿用圖1A~圖1C的實施例的元件標號與部分內容，其中採用相同或近似的標號來表示相同或近似的元件，並且省略了相同技術內容的說明。關於省略 部分的說明可參考前述實施例，在此不贅述。 It must be noted here that the embodiment of FIG. 4 continues to use the element labels and partial contents of the embodiments of FIGS. 1A to 1C, wherein the same or similar reference numerals are used to indicate the same or similar elements, and the same technical content is omitted. Instructions. About omitting For some descriptions, reference may be made to the foregoing embodiment, which is not repeated here.

請參考圖4，影像感測顯示裝置10b的光感測元件L位於對應的擋牆110a上，擋牆110b、110c相鄰於擋牆110a。在本實施例中，第一發光元件D1位於擋牆110a與擋牆110b之間，第四發光元件D4位於擋牆110a與擋牆110c之間。 Referring to FIG. 4, the light sensing element L of the image sensing display device 10b is located on the corresponding retaining wall 110a, and the retaining walls 110b and 110c are adjacent to the retaining wall 110a. In this embodiment, the first light emitting element D1 is located between the retaining wall 110a and the retaining wall 110b, and the fourth light emitting element D4 is located between the retaining wall 110a and the retaining wall 110c.

第一反射層132位於擋牆110a上，且第二反射層134位於擋牆110b、110c上。第一反射層132相較於第二反射層134更靠近光感測元件L，且第一反射層132的高度低於第二反射層134的高度。藉此，第一反射層132比較不容意干擾光感測元件L，且第一反射層132與第二反射層134能使發光元件所發出的光更為集中，增加光線的利用率。 The first reflective layer 132 is located on the retaining wall 110a, and the second reflective layer 134 is located on the retaining wall 110b, 110c. The first reflective layer 132 is closer to the light sensing element L than the second reflective layer 134, and the height of the first reflective layer 132 is lower than the height of the second reflective layer 134. In this way, the first reflective layer 132 is less likely to interfere with the light sensing element L, and the first reflective layer 132 and the second reflective layer 134 can make the light emitted by the light emitting element more concentrated and increase the utilization rate of the light.

圖5是依照本發明的一實施例的一種影像感測顯示裝置的上視示意圖。 5 is a schematic top view of an image sensing display device according to an embodiment of the invention.

在此必須說明的是，圖5的實施例沿用圖1A~圖1C的實施例的元件標號與部分內容，其中採用相同或近似的標號來表示相同或近似的元件，並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例，在此不贅述。 It must be noted here that the embodiment of FIG. 5 continues to use the element numbers and partial contents of the embodiment of FIGS. 1A to 1C, wherein the same or similar reference numbers are used to indicate the same or similar elements, and the same technical content is omitted. Instructions. For the description of the omitted parts, reference may be made to the foregoing embodiments, which will not be repeated here.

圖5之影像感測顯示裝置10c與圖1A之影像感測顯示裝置10的主要差異在於：影像感測顯示裝置10中第二發光元件D2與第三發光元件D3的排列位置不同於影像感測顯示裝置10c中第二發光元件D2與第三發光元件D3的排列位置。 The main difference between the image sensing display device 10c of FIG. 5 and the image sensing display device 10 of FIG. 1A is that the arrangement position of the second light emitting element D2 and the third light emitting element D3 in the image sensing display device 10 is different from the image sensing The arrangement position of the second light emitting element D2 and the third light emitting element D3 in the display device 10c.

在圖1A的實施例中，第二發光元件D2位於第一發光元 件D1的第二方向Z2上，且第三發光元件D3位於第一發光元件D1的第一方向Z1上。在圖5的實施例中，第二發光元件D2位於第一發光元件D1的第一方向Z1上，且第三發光元件D3位於第一發光元件D1的第二方向Z2上。 In the embodiment of FIG. 1A, the second light emitting element D2 is located in the first light emitting element The component D1 is in the second direction Z2, and the third light emitting element D3 is located in the first direction Z1 of the first light emitting element D1. In the embodiment of FIG. 5, the second light emitting element D2 is located in the first direction Z1 of the first light emitting element D1, and the third light emitting element D3 is located in the second direction Z2 of the first light emitting element D1.

圖6是依照本發明的一實施例的一種影像感測顯示裝置的上視示意圖。 6 is a schematic top view of an image sensing display device according to an embodiment of the invention.

在此必須說明的是，圖6的實施例沿用圖5的實施例的元件標號與部分內容，其中採用相同或近似的標號來表示相同或近似的元件，並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例，在此不贅述。 It must be noted here that the embodiment of FIG. 6 uses the element numbers and partial contents of the embodiment of FIG. 5, wherein the same or similar reference numerals are used to indicate the same or similar elements, and the description of the same technical content is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, which will not be repeated here.

圖6之影像感測顯示裝置10d與圖5之影像感測顯示裝置10c的主要差異在於：影像感測顯示裝置10c中第一發光元件D1和第四發光元件D4的排列位置不同於影像感測顯示裝置10d中第一發光元件D1和第四發光元件D4的排列位置。 The main difference between the image sensing display device 10d of FIG. 6 and the image sensing display device 10c of FIG. 5 is that the arrangement position of the first light emitting element D1 and the fourth light emitting element D4 in the image sensing display device 10c is different from the image sensing The arrangement position of the first light-emitting element D1 and the fourth light-emitting element D4 in the display device 10d.

在圖6的實施例中，第一發光元件D1位於擋牆110的第二方向Z2上，第四發光元件D4位於擋牆110的第一方向Z1上。 In the embodiment of FIG. 6, the first light emitting element D1 is located in the second direction Z2 of the retaining wall 110, and the fourth light emitting element D4 is located in the first direction Z1 of the retaining wall 110.

雖然圖1A、圖5以及圖6列舉了三種第一發光元件D1、第二發光元件D2、第三發光元件D3、第四發光元件D4、第五發光元件D5以及第六發光元件D6的排列位置，但本發明不限於此。第一發光元件D1、第二發光元件D2、第三發光元件D3、第四發光元件D4、第五發光元件D5以及第六發光元件D6還可以依照其他方式排列。 Although FIG. 1A, FIG. 5 and FIG. 6 list three kinds of arrangement positions of the first light emitting element D1, the second light emitting element D2, the third light emitting element D3, the fourth light emitting element D4, the fifth light emitting element D5 and the sixth light emitting element D6 , But the invention is not limited to this. The first light-emitting element D1, the second light-emitting element D2, the third light-emitting element D3, the fourth light-emitting element D4, the fifth light-emitting element D5, and the sixth light-emitting element D6 may also be arranged in other ways.

圖7是依照本發明的一實施例的一種影像感測顯示裝置的上視示意圖。 7 is a schematic top view of an image sensing display device according to an embodiment of the invention.

在此必須說明的是，圖7的實施例沿用圖1A~圖1C的實施例的元件標號與部分內容，其中採用相同或近似的標號來表示相同或近似的元件，並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例，在此不贅述。 It must be noted here that the embodiment of FIG. 7 continues to use the element labels and partial contents of the embodiments of FIGS. 1A to 1C, wherein the same or similar reference numerals are used to indicate the same or similar components, and the same technical content is omitted. Instructions. For the description of the omitted parts, reference may be made to the foregoing embodiments, which will not be repeated here.

請參考圖7，影像感測顯示裝置10e包括基板100、感測單元120a、感測單元120b、感測單元120c、感測單元120d、擋牆110a、擋牆110b、畫素控制元件200a以及畫素控制元件200b。 Referring to FIG. 7, the image sensing display device 10e includes a substrate 100, a sensing unit 120a, a sensing unit 120b, a sensing unit 120c, a sensing unit 120d, a retaining wall 110a, a retaining wall 110b, a pixel control element 200a and a picture素控制元件200b.

感測單元120a的光感測元件L以及感測單元120b的光感測元件L位於同一個擋牆110a上，且感測單元120a的光感測元件L以及感測單元120b的光感測元件L共用同個第二電極e2。 The light sensing element L of the sensing unit 120a and the light sensing element L of the sensing unit 120b are located on the same retaining wall 110a, and the light sensing element L of the sensing unit 120a and the light sensing element of the sensing unit 120b L shares the same second electrode e2.

感測單元120c的光感測元件L以及感測單元120d的光感測元件L位於同一個擋牆110b上，且感測單元120c的光感測元件L以及感測單元120d的光感測元件L共用同個第二電極e2。 The light sensing element L of the sensing unit 120c and the light sensing element L of the sensing unit 120d are located on the same retaining wall 110b, and the light sensing element L of the sensing unit 120c and the light sensing element of the sensing unit 120d L shares the same second electrode e2.

畫素控制元件200a位於相鄰的感測單元120a以及感測單元120c之間。畫素控制元件200b位於相鄰的感測單元120b以及感測單元120d之間。 The pixel control element 200a is located between the adjacent sensing unit 120a and the sensing unit 120c. The pixel control element 200b is located between the adjacent sensing unit 120b and the sensing unit 120d.

光感測元件L與畫素控制元件200a或畫素控制元件200b於第三方向Z3上交替排列。 The light sensing element L and the pixel control element 200a or the pixel control element 200b are alternately arranged in the third direction Z3.

在一些實施例中，畫素控制元件200a與畫素控制元件200b包括驅動晶片、薄膜電晶體或其他驅動元件。 In some embodiments, the pixel control element 200a and the pixel control element 200b include driving chips, thin film transistors, or other driving elements.

藉由將畫素控制元件200a與畫素控制元件200b設置於相鄰的感測單元之間，可以增加線路佈局的空間利用率。此外，將畫素控制元件200a與畫素控制元件200b設置於顯示區中，可以使影像感測顯示裝置具有窄邊框的優點。 By disposing the pixel control element 200a and the pixel control element 200b between adjacent sensing units, the space utilization rate of the circuit layout can be increased. In addition, the pixel control element 200a and the pixel control element 200b are disposed in the display area, so that the image sensing display device has the advantage of a narrow frame.

圖8是依照本發明的一實施例的一種影像感測顯示裝置的上視示意圖。 8 is a schematic top view of an image sensing display device according to an embodiment of the invention.

在此必須說明的是，圖8的實施例沿用圖7的實施例的元件標號與部分內容，其中採用相同或近似的標號來表示相同或近似的元件，並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例，在此不贅述。 It must be noted here that the embodiment of FIG. 8 follows the element numbers and partial contents of the embodiment of FIG. 7, wherein the same or similar reference numerals are used to indicate the same or similar elements, and the description of the same technical content is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, which will not be repeated here.

圖8之影像感測顯示裝置10f與圖7之影像感測顯示裝置10e的主要差異在於：影像感測顯示裝置10e中，多個感測單元對應一個擋牆設置；影像感測顯示裝置10f中，一個感測單元對應一個擋牆設置。 The main difference between the image sensing display device 10f of FIG. 8 and the image sensing display device 10e of FIG. 7 is that: in the image sensing display device 10e, a plurality of sensing units are provided corresponding to one retaining wall; in the image sensing display device 10f , One sensing unit corresponds to one retaining wall setting.

請參考圖8，影像感測顯示裝置10f包括基板100、感測單元120a、感測單元120b、感測單元120c、感測單元120d、擋牆110a、擋牆110b、擋牆110c、擋牆110d、畫素控制元件200a以及畫素控制元件200b。 Please refer to FIG. 8, the image sensing display device 10f includes a substrate 100, a sensing unit 120a, a sensing unit 120b, a sensing unit 120c, a sensing unit 120d, a retaining wall 110a, a retaining wall 110b, a retaining wall 110c, a retaining wall 110d , A pixel control element 200a and a pixel control element 200b.

感測單元120a的光感測元件L設置於擋牆110a上。感測單元120c的光感測元件L設置於擋牆110c上。相鄰的兩個感測單元120a、120c分別對應於相鄰的兩個擋牆110a、110c，且相鄰的兩個擋牆110a、110c互相分開。 The light sensing element L of the sensing unit 120a is disposed on the retaining wall 110a. The light sensing element L of the sensing unit 120c is disposed on the retaining wall 110c. The two adjacent sensing units 120a and 120c respectively correspond to the two adjacent retaining walls 110a and 110c, and the two adjacent retaining walls 110a and 110c are separated from each other.

感測單元120b的光感測元件L設置於擋牆110b上。感測單元120d的光感測元件L設置於擋牆110d上。相鄰的兩個感測單元120b、120d分別對應於相鄰的兩個擋牆110b、110d，且相鄰的兩個擋牆110b、110d互相分開。 The light sensing element L of the sensing unit 120b is disposed on the retaining wall 110b. The light sensing element L of the sensing unit 120d is disposed on the retaining wall 110d. The two adjacent sensing units 120b and 120d respectively correspond to the two adjacent retaining walls 110b and 110d, and the two adjacent retaining walls 110b and 110d are separated from each other.

在本實施例中，對應於不同感測單元120a~120d的擋牆110a~110d互相分開，藉此能改善相鄰的感測單元120a~120d之間互相干擾的問題。 In this embodiment, the retaining walls 110a to 110d corresponding to the different sensing units 120a to 120d are separated from each other, thereby improving the problem of mutual interference between adjacent sensing units 120a to 120d.

綜上所述，本發明的影像感測顯示裝置中，發光元件發出之光在抵達感測層前所需通過的層較少(至少不需要通過基板至擋牆之間的層)。藉此，光感測元件產生之光電流較好控制，且均勻性較佳，能夠減少色彩或亮度不均(MURA)的問題。 In summary, in the image sensing display device of the present invention, the light emitted by the light-emitting element needs to pass through fewer layers before reaching the sensing layer (at least, the layer between the substrate and the retaining wall is not required). In this way, the photocurrent generated by the light sensing element is better controlled and the uniformity is better, which can reduce the problem of color or brightness unevenness (MURA).

此外，光感測元件形成於擋牆上，除了能降低對畫素的開口率造成影響外，也能避免光感測元件受到其他於形成光感測元件之前進行的製程的影響(例如形成開關元件以及主動元件的製程)。 In addition, the light-sensing element is formed on the retaining wall, in addition to reducing the impact on the pixel aperture ratio, it can also prevent the light-sensing element from being affected by other processes performed before forming the light-sensing element (for example, forming a switch Process of components and active components).

雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明的精神和範圍內，當可作些許的更動與潤飾，故本發明的保護範圍當視後附的申請專利範圍所界定者為準。 Although the present invention has been disclosed as above with examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be subject to the scope defined in the appended patent application.

10‧‧‧影像感測顯示裝置 10‧‧‧Image sensing display device

100‧‧‧基板 100‧‧‧ substrate

110‧‧‧擋牆 110‧‧‧Retaining wall

120‧‧‧感測單元 120‧‧‧sensing unit

132‧‧‧反射層 132‧‧‧Reflective layer

D1~D6‧‧‧發光元件 D1~D6‧‧‧‧Lighting element

e1、e2‧‧‧電極 e1, e2‧‧‧electrode

O2、O3‧‧‧開口 O2, O3‧‧‧ opening

L‧‧‧光感測元件 L‧‧‧Light sensing element

sr‧‧‧感測層 sr‧‧‧sensing layer

X1、X2、Z1、Z2‧‧‧方向 X1, X2, Z1, Z2

Claims (13)

一種影像感測顯示裝置，包括： 一基板； 多個擋牆，位於該基板上；以及 多個感測單元，位於該基板上，各該感測單元包括： 一第一發光元件、一第二發光元件、一第三發光元件以及一第四發光元件，位於對應的擋牆周圍，其中該第一發光元件、該第二發光元件以及該第三發光元件包括紅色發光元件、綠色發光元件以及藍色發光元件，且該第一發光元件與該第四發光元件為相同顏色的發光元件；以及 一光感測元件，位於該對應的擋牆上，該光感測元件包括：一第一電極、一第二電極以及位於該第一電極和該第二電極之間的一感測層，其中該第一電極與該第二電極分別自該感測層往一第一方向以及一第二方向延伸，該第一方向不同於該第二方向。An image sensing display device includes: a substrate; a plurality of baffles on the substrate; and a plurality of sensing units on the substrate, each of the sensing units includes: a first light emitting element, a second The light emitting element, a third light emitting element and a fourth light emitting element are located around the corresponding retaining wall, wherein the first light emitting element, the second light emitting element and the third light emitting element include a red light emitting element, a green light emitting element and a blue light emitting element Color light-emitting element, and the first light-emitting element and the fourth light-emitting element are light-emitting elements of the same color; and a light-sensing element located on the corresponding retaining wall, the light-sensing element includes: a first electrode, A second electrode and a sensing layer between the first electrode and the second electrode, wherein the first electrode and the second electrode extend from the sensing layer in a first direction and a second direction, respectively , The first direction is different from the second direction. 如申請專利範圍第1項所述的影像感測顯示裝置，更包括一第一反射層，位於該對應的擋牆上，且該第一反射層與該第一電極以及該第二電極分開。The image sensing display device as described in item 1 of the patent application scope further includes a first reflective layer located on the corresponding retaining wall, and the first reflective layer is separated from the first electrode and the second electrode. 如申請專利範圍第2項所述的影像感測顯示裝置，其中該第一發光元件連接至一第一連接結構以及一第二連接結構，且該第一反射層與該第一連接結構屬於同一圖案化導電層。The image sensing display device as described in item 2 of the patent application scope, wherein the first light emitting element is connected to a first connection structure and a second connection structure, and the first reflective layer and the first connection structure belong to the same Pattern the conductive layer. 如申請專利範圍第3項所述的影像感測顯示裝置，其中該第一發光元件為垂直式發光元件，且該第一連接結構與該第二連接結構分別連接該第一發光元件的下側與上側。The image sensing display device as described in item 3 of the patent application range, wherein the first light-emitting element is a vertical light-emitting element, and the first connection structure and the second connection structure are respectively connected to the lower side of the first light-emitting element With the upper side. 如申請專利範圍第4項所述的影像感測顯示裝置，其中該第一連接結構為金屬，且該第二連接結構為透明導電材料。The image sensing display device as described in item 4 of the patent application scope, wherein the first connection structure is metal, and the second connection structure is a transparent conductive material. 如申請專利範圍第2項所述的影像感測顯示裝置，更包括一第二反射層，位於相鄰於該對應的擋牆之另一擋牆上，其中該第一反射層相較於該第二反射層更靠近該光感測元件，且該第一反射層的高度低於該第二反射層的高度。The image sensing display device as described in item 2 of the patent application scope further includes a second reflective layer located on another retaining wall adjacent to the corresponding retaining wall, wherein the first reflective layer is compared to the The second reflective layer is closer to the light sensing element, and the height of the first reflective layer is lower than the height of the second reflective layer. 如申請專利範圍第1項所述的影像感測顯示裝置，其中各該感測單元更包括一主動元件，位於該對應的擋牆下方。The image sensing display device as described in item 1 of the patent application scope, wherein each of the sensing units further includes an active element located under the corresponding retaining wall. 如申請專利範圍第1項所述的影像感測顯示裝置，更包括一畫素控制元件，位於相鄰的兩個感測單元之間。The image sensing display device as described in item 1 of the patent application scope further includes a pixel control element located between two adjacent sensing units. 如申請專利範圍第1項所述的影像感測顯示裝置，其中相鄰的兩個感測單元分別對應於相鄰的兩個擋牆，且該相鄰的兩個擋牆互相分開。The image sensing display device as described in item 1 of the patent application range, wherein two adjacent sensing units respectively correspond to two adjacent retaining walls, and the two adjacent retaining walls are separated from each other. 一種影像處理方法，包括： 提供一影像感測顯示裝置，該影像感測顯示裝置包括： 一基板； 多個擋牆，位於該基板上；以及 多個感測單元，位於該基板上，各該感測單元包括： 一第一發光元件、一第二發光元件、一第三發光元件以及一第四發光元件，位於對應的擋牆周圍，其中該第一發光元件、該第二發光元件以及該第三發光元件包括紅色發光元件、綠色發光元件以及藍色發光元件，且該第一發光元件與該第四發光元件為相同顏色的發光元件；以及 一光感測元件，位於該對應的擋牆上，該光感測元件包括：一第一電極、一第二電極以及位於該第一電極和該第二電極之間的一感測層，其中該第一電極與該第二電極分別自該感測層往一第一方向以及一第二方向延伸，該第一方向不同於該第二方向； 掃描一待測物，方法包括： 該光感測元件接收該第一發光元件被該待測物反射的光； 該光感測元件接收該第二發光元件被該待測物反射的光； 該光感測元件接收該第三發光元件被該待測物反射的光； 該光感測元件接收該第四發光元件被該待測物反射的光； 運算該光感測元件產生之多個訊號；以及 顯示運算該些訊號後產生的影像。An image processing method includes: providing an image sensing display device including: a substrate; a plurality of baffles on the substrate; and a plurality of sensing units on the substrate, each of which The sensing unit includes: a first light-emitting element, a second light-emitting element, a third light-emitting element, and a fourth light-emitting element, located around the corresponding barrier wall, wherein the first light-emitting element, the second light-emitting element, and the The third light-emitting element includes a red light-emitting element, a green light-emitting element and a blue light-emitting element, and the first light-emitting element and the fourth light-emitting element are light-emitting elements of the same color; and a light-sensing element located on the corresponding retaining wall The light-sensing element includes: a first electrode, a second electrode, and a sensing layer between the first electrode and the second electrode, wherein the first electrode and the second electrode are respectively from the The sensing layer extends in a first direction and a second direction, the first direction is different from the second direction; scanning an object to be measured, the method includes: the light sensing element receives the first light emitting element to be measured Light reflected by the object; the light-sensing element receives light reflected by the second light-emitting element from the object to be measured; the light-sensing element receives light reflected by the third light-emitting element from the object to be measured; the light-sensing element Receiving light reflected by the fourth light-emitting element from the object to be measured; calculating a plurality of signals generated by the light-sensing element; and displaying images generated after calculating the signals. 如申請專利範圍第10項所述的方法，掃描該待測物的方法更包括： 該光感測元件接收該第一發光元件被該待測物反射的光，並產生一第一訊號； 儲存該第一訊號； 該光感測元件接收該第二發光元件被該待測物反射的光，並產生一第二訊號； 儲存該第二訊號； 該光感測元件接收該第三發光元件被該待測物反射的光，並產生一第三訊號； 儲存該第三訊號； 該光感測元件接收該第四發光元件被該待測物反射的光，並產生一第四訊號； 儲存該第四訊號； 運算該第一訊號、該第二訊號、該第三訊號以及該第四訊號；以及 顯示運算該第一訊號、該第二訊號、該第三訊號以及該第四訊號後產生的影像。According to the method described in item 10 of the patent application scope, the method of scanning the object to be tested further comprises: the light sensing element receives the light reflected by the first light emitting element from the object to be tested and generates a first signal; The first signal; the light-sensing element receives the light reflected by the object under test from the second light-emitting element and generates a second signal; stores the second signal; the light-sensing element receives the third light-emitting element The light reflected by the object under test generates a third signal; the third signal is stored; the light-sensing element receives the light reflected by the fourth light-emitting element from the object under test and generates a fourth signal; the signal is stored The fourth signal; computing the first signal, the second signal, the third signal, and the fourth signal; and displaying the result of computing the first signal, the second signal, the third signal, and the fourth signal image. 如申請專利範圍第10項所述的方法，其中同時點亮該第一發光元件與該第四發光元件。The method according to item 10 of the patent application scope, wherein the first light emitting element and the fourth light emitting element are simultaneously lit. 如申請專利範圍第10項所述的方法，其中於掃描該代測物時，該第一發光元件、該第二發光元件、該第三發光元件與該第四發光元件分別以頻率f1驅動；於顯示運算該些訊號後產生的影像時，該第一發光元件、該第二發光元件、該第三發光元件與該第四發光元件中的至少部分是以頻率f2驅動，頻率f1大於頻率f2。The method according to item 10 of the patent application scope, wherein when scanning the substitute object, the first light-emitting element, the second light-emitting element, the third light-emitting element, and the fourth light-emitting element are driven at a frequency f1, respectively; When displaying images generated after computing the signals, at least part of the first light-emitting element, the second light-emitting element, the third light-emitting element, and the fourth light-emitting element are driven at the frequency f2, and the frequency f1 is greater than the frequency f2 .
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