TWI695205B - Image-sensing display device and image processing method - Google Patents

Image-sensing display device and image processing method Download PDF

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Publication number
TWI695205B
TWI695205B TW107143146A TW107143146A TWI695205B TW I695205 B TWI695205 B TW I695205B TW 107143146 A TW107143146 A TW 107143146A TW 107143146 A TW107143146 A TW 107143146A TW I695205 B TWI695205 B TW I695205B
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Taiwan
Prior art keywords
light
emitting
sensing
electrode
signal
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TW107143146A
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Chinese (zh)
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TW202009560A (en
Inventor
陳信學
劉品妙
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友達光電股份有限公司
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Priority to US201862717260P priority Critical
Priority to US62/717,260 priority
Application filed by 友達光電股份有限公司 filed Critical 友達光電股份有限公司
Priority claimed from CN201910422561.3A external-priority patent/CN110112199A/en
Publication of TW202009560A publication Critical patent/TW202009560A/en
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Publication of TWI695205B publication Critical patent/TWI695205B/en

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Abstract

An image-sensing display device and an image processing method are provided. The image-sensing display device includes a substrate, banks, and sensor units. The banks and the sensor units are disposed on the substrate. Each of the sensor units includes first to fourth light-emitting devices and a photo sensor. The first to fourth light-emitting devices are disposed around a corresponding bank. The first to third light-emitting devices include a red light-emitting device, a green light-emitting device, and a blue light-emitting device. The first and fourth light-emitting devices are light-emitting devices with same color. The photo sensor is disposed on the corresponding bank. The photo sensor includes a first electrode, a second electrode, and a photosensitive layer located between the first electrode and the second electrode. The first electrode and the second electrode extend from the photosensitive layer along a first direction and a second direction respectively.

Description

Image sensing display device and image processing method

The invention relates to a display device, and in particular to an image sensing display device and an image processing method.

At present, there are many personal electronic products with fingerprint recognition devices on the market. For example, in order to protect the privacy of users, many smart phones are equipped with a fingerprint recognition function to prevent others from reading the data in the smart phone without the user's consent. In some smart phones with fingerprint recognition function, the light sensing element is used to receive the light reflected by the fingerprint, thereby obtaining the fingerprint recognition function. In order to obtain a smart phone with a narrow bezel or without a bezel, many manufacturers try to arrange the light sensing element in the display area of the screen. However, the display device provided in the display area limits the size of the pixel opening area.

The invention provides an image sensing display device, which can improve the problem that the light sensing element affects the pixel aperture ratio.

The invention provides an image processing method, which can improve the problem that the light sensing element affects the pixel aperture ratio.

At least one embodiment of the present invention provides an image sensing display device. The image sensing display device includes a substrate, a plurality of retaining walls, and a plurality of sensing units. The retaining wall and the sensing unit are located on the substrate. Each sensing unit includes first to fourth light emitting elements and light sensing elements. The first to fourth light emitting elements are located around the corresponding retaining wall. The first to third light emitting elements include red light emitting elements, green light emitting elements, and blue light emitting elements. The first light emitting element and the fourth light emitting element are light emitting elements of the same color. The light sensing element is located on the corresponding retaining wall. The light sensing element includes a first electrode, a second electrode, and a sensing layer between the first electrode and the second electrode. The first electrode and the second electrode extend from the sensing layer in the first direction and the second direction, respectively. The first direction is different from the second direction.

At least one embodiment of the present invention provides an image processing method, including providing an image sensing display device, scanning an object to be measured, computing a plurality of signals generated by a light sensing element, and displaying an image generated after computing the signals. The image sensing display device includes a substrate, a plurality of retaining walls, and a plurality of sensing units. The retaining wall and the sensing unit are located on the substrate. Each sensing unit includes first to fourth light emitting elements and light sensing elements. The first to fourth light emitting elements are located around the corresponding retaining wall. The first to third light emitting elements include red light emitting elements, green light emitting elements, and blue light emitting elements. The first light emitting element and the fourth light emitting element are light emitting elements of the same color. The light sensing element is located on the corresponding retaining wall. The light sensing element includes a first electrode, a second electrode, and a sensing layer between the first electrode and the second electrode. The first electrode and the second electrode respectively go from the sensing layer to the first direction And the second direction extends. The first direction is different from the second direction. The method for scanning the object under test includes: the light sensing element receives light reflected by the object under test from the first light emitting element; the light sensing element receives light reflected by the object under test from the second light emitting element; and the third light emitting element receives light from the object under test The element is reflected by the object under test; the light sensing element receives the light reflected by the object under test by the fourth light emitting element.

Based on the above, the light emitted by the light emitting element is reflected by the object to be measured and received by the light sensing element. Because the light sensing element is located on the retaining wall. Therefore, the light emitted by the light emitting element needs to pass through fewer layers before reaching the sensing layer. In this way, the photocurrent generated by the light sensing element is better controlled and the uniformity is better, which can reduce the problem of color or brightness unevenness (MURA). In addition, the light-sensing element is formed on the retaining wall, in addition to reducing the impact on the pixel aperture ratio, it can also prevent the light-sensing element from being affected by other processes performed before the light-sensing element is formed.

In order to make the above-mentioned features and advantages of the present invention more obvious and understandable, the embodiments are specifically described below in conjunction with the accompanying drawings for detailed description as follows.

10.10a~10f: Image sensing display device

100: substrate

110, 110a~110d: retaining wall

120, 120a~120d: sensing unit

132, 134: reflective layer

200a, 200b: pixel control element

A: Active component

b: buffer layer

C1, C2: connection structure

ch1, ch2: channel layer

D1~D6: light emitting element

d1, d2: Drain

e1, e2: electrode

H1~H4, O1~O3: opening

h: height difference

i: light

GI: gate insulation

g1, g2: gate

I1, I2: insulating layer

L: Light sensing element

OB: test object

SM: shading layer

sr: sensing layer

s1, s2: source

T: switching element

w1, w2: width

X1, X2, Z1~Z3: direction

FIG. 1A is a schematic top view of an image sensing display device according to an embodiment of the invention.

Fig. 1B is a schematic cross-sectional view taken along line aa' of Fig. 1A.

Fig. 1C is a schematic cross-sectional view taken along line bb' of Fig. 1A.

2 is a flowchart of an image processing method according to an embodiment of the invention intention.

3A is a schematic top view of an image sensing display device according to an embodiment of the invention.

Fig. 3B is a schematic cross-sectional view taken along line cc' of Fig. 3A.

4 is a schematic cross-sectional view of an image sensing display device according to an embodiment of the invention.

5 is a schematic top view of an image sensing display device according to an embodiment of the invention.

6 is a schematic top view of an image sensing display device according to an embodiment of the invention.

7 is a schematic top view of an image sensing display device according to an embodiment of the invention.

8 is a schematic top view of an image sensing display device according to an embodiment of the invention.

FIG. 1A is a schematic top view of an image sensing display device according to an embodiment of the invention. Fig. 1B is a schematic cross-sectional view taken along line aa' of Fig. 1A. Fig. 1C is a schematic cross-sectional view taken along line bb' of Fig. 1A.

Please refer to FIGS. 1A and 1B, the image sensing display device 10 includes a substrate 100, a plurality of retaining walls 110 and a plurality of sensing units 120. For convenience of description, FIG. 1A takes a retaining wall 110 and a sensing unit 120 as examples. Retaining wall 110 and sensing sheet The element 120 is located on the substrate 100. The sensing unit 120 includes a first light emitting element D1, a second light emitting element D2, a third light emitting element D3 and a fourth light emitting element D4, and a light sensing element L, and the first light emitting element D1, the second light emitting element D2, the third The light emitting element D3 and the fourth light emitting element D4 are located around the corresponding retaining wall 110. In this embodiment, the sensing unit 120 includes a first light emitting element D1, a second light emitting element D2, a third light emitting element D3, a fourth light emitting element D4, a fifth light emitting element D5 and a sixth light emitting element D6 and light sensing Element L, and the first light-emitting element D1, the second light-emitting element D2, the third light-emitting element D3, the fourth light-emitting element D4, the fifth light-emitting element D5, and the sixth light-emitting element D6 are located around the corresponding retaining wall 110. In this embodiment, the first light-emitting element D1, the second light-emitting element D2, the third light-emitting element D3, the fourth light-emitting element D4, the fifth light-emitting element D5, and the sixth light-emitting element D6 are micro LEDs (Micro LED ).

The first light emitting element D1 and the fourth light emitting element D4 are light emitting elements of the same color. The second light emitting element D2 and the fifth light emitting element D5 are light emitting elements of the same color. The third light emitting element D3 and the sixth light emitting element D6 are light emitting elements of the same color. The first to third light emitting elements D1 to D3 include red light emitting elements, green light emitting elements, and blue light emitting elements. In this embodiment, the first light-emitting element D1 and the fourth light-emitting element D4 with the same color are located on opposite sides of the retaining wall 110, and the second light-emitting element D2 and the fifth light-emitting element D5 with the same color are located on opposite sides of the retaining wall 110 The third light-emitting element D3 and the sixth light-emitting element D6 with the same color are located on opposite sides of the retaining wall 110.

In this embodiment, the first light-emitting element D1, the second light-emitting element D2, The third light-emitting element D3, the fourth light-emitting element D4, the fifth light-emitting element D5, and the sixth light-emitting element D6 have similar structures except for the color. Therefore, FIG. 1B uses the first light-emitting element D1 as an example.

The first light-emitting element D1, the second light-emitting element D2, the third light-emitting element D3, the fourth light-emitting element D4, the fifth light-emitting element D5, and the sixth light-emitting element D6 are located around the corresponding retaining wall 110. The first light-emitting element D1, the second light-emitting element D2, the third light-emitting element D3, the fourth light-emitting element D4, the fifth light-emitting element D5, and the sixth light-emitting element D6 are electrically connected from the corresponding switching elements T, respectively. In this embodiment, the first light-emitting element D1, the second light-emitting element D2, the third light-emitting element D3, the fourth light-emitting element D4, the fifth light-emitting element D5 and the sixth light-emitting element D6 can be separated by different switching elements T drive.

FIG. 1B illustrates the switching element T corresponding to the first light-emitting element D1. Since the first light-emitting element D1, the second light-emitting element D2, the third light-emitting element D3, the fourth light-emitting element D4, the fifth light-emitting element D5, and the sixth The switch elements T corresponding to the light-emitting elements D6 respectively have a similar structure, so only the switch elements T corresponding to the first light-emitting element D1 will be described.

The switching element T includes a gate g1, a channel layer ch1, a source s1, and a drain d1. The channel layer ch1 is located on the substrate 100.

In this embodiment, a light shielding layer SM is also sandwiched between the channel layer ch1 and the substrate 100, and a buffer layer b is sandwiched between the light shielding layer SM and the channel layer ch1. The gate g1 is electrically connected to the scanning line (not shown). The gate electrode g1 overlaps the channel layer ch1, and a gate insulating layer GI is sandwiched between the gate electrode g1 and the channel layer ch1. The first insulating layer I1 covers the gate g1. The source electrode s1 and the drain electrode d1 are located on the first insulating layer I1, and are electrically connected to the channel layer ch1 through the openings H1 and H2, respectively. The openings H1 and H2 penetrate at least the first insulating layer I1. In this embodiment, the openings H1 and H2 penetrate the gate insulating layer GI and the first insulating layer I1.

Although the switching element T in this embodiment is a top gate type thin film transistor as an example, the invention is not limited to this. In other embodiments, the switching element T may also be a bottom gate type or other types of thin film transistors.

The second insulating layer I2 covers the switching element T. The first light-emitting element D1, the second light-emitting element D2, the third light-emitting element D3, the fourth light-emitting element D4, the fifth light-emitting element D5, the sixth light-emitting element D6, and the barrier 110 are located on the second insulating layer I2.

In this embodiment, the first light emitting element D1, the second light emitting element D2, the third light emitting element D3, the fourth light emitting element D4, the fifth light emitting element D5, and the sixth light emitting element D6 are horizontal light emitting elements. Taking the first light-emitting element D1 as an example, the first light-emitting element D1 is connected to the first connection structure C1 and the second connection structure C2, and both the first connection structure C1 and the second connection structure C2 are connected to the upper side of the first light-emitting element D1. The first connection structure C1 is located in the opening O1 of the second insulating layer I2 and is electrically connected to the first light emitting element D1 and the drain d1 of the switching element T.

In this embodiment, the first light emitting element D1, the second light emitting element D2, the third light emitting element D3, the fourth light emitting element D4, the fifth light emitting element D5 and the sixth light emitting element D6 respectively have different first connection structures C1 is electrically connected to different switching elements T, the first light emitting element D1, the second light emitting element D2, the third light emitting element D3, the fourth light emitting element D4, the fifth light emitting element D5 and the sixth light emitting element D6 can be selectively electrically connected to each other through the second connection structure C2, but the invention is not limited thereto.

The light sensing element L is located on the corresponding retaining wall 110. The light sensing element L includes a first electrode e1, a second electrode e2, and a sensing layer sr located between the first electrode e1 and the second electrode e2. The width w1 of the sensing layer sr is smaller than the width w2 of the top surface of the corresponding retaining wall 110.

The first electrode e1 and the second electrode e2 extend from the sensing layer sr in the first direction X1 and the second direction X2, respectively. The first direction X1 is different from the second direction X2. For example, the first direction X1 and the second direction X2 are at 90 degrees, 180 degrees, or other angles. In other embodiments, the sensing layer sr and the first electrode e1 have the same pattern. In other words, the sensing layer sr and the first electrode e1 can be defined by the same mask, thereby saving the number of masks required for the manufacturing process, but the invention is not limited to this.

In this embodiment, the image sensing display device 10 further includes a first reflective layer 132. The first reflective layer 132 is located on the corresponding retaining wall 110, and the first reflective layer 132 is separated from the first electrode e1 and the second electrode e2, thereby preventing the first reflective layer 132 from affecting the signal generated by the light sensing element L. In this embodiment, the first reflective layer 132 and the first electrode e1 belong to the same patterned conductive layer, thereby reducing the number of photomasks required in the manufacturing process.

1A and 1C, the sensing unit 120 further includes an active element A. In this embodiment, the active element A is located below the corresponding retaining wall 110. Thereby, the distance between the first light emitting element D1, the second light emitting element D2, the third light emitting element D3, the fourth light emitting element D4, the fifth light emitting element D5 and the sixth light emitting element D6 can be It is closer and can be arranged more symmetrically to improve space utilization.

The active device A includes a gate g2, a channel layer ch2, a source s2, and a drain d2. The channel layer ch2 is located on the substrate 100.

In this embodiment, a light shielding layer SM is also sandwiched between the channel layer ch2 and the substrate 100, and a buffer layer b is sandwiched between the light shielding layer SM and the channel layer ch2. The gate electrode g2 overlaps the channel layer ch2, and a gate insulating layer GI is sandwiched between the gate electrode g2 and the channel layer ch2. The first insulating layer I1 covers the gate g2. The source electrode s2 and the drain electrode d2 are located on the first insulating layer I1, and are electrically connected to the channel layer ch2 through the openings H3 and H4, respectively. The openings H3 and H4 penetrate at least the first insulating layer I1. In this embodiment, the openings H3 and H4 penetrate the gate insulating layer GI and the first insulating layer I1.

Although the active device A in this embodiment is a top gate type thin film transistor as an example, the invention is not limited to this. In other embodiments, the active element A may also be a bottom gate type or other types of thin film transistors.

The first electrode e1 of the light sensing element L is located in the opening O2 of the second insulating layer I2 and is electrically connected to the drain d2 of the active element A. The second electrode e2 of the light sensing element L is located in the opening O3 of the second insulating layer I2 and is electrically connected to the signal line CL.

In this embodiment, the second electrode e2, the first connection structure C1, and the second connection structure C2 of the light sensing element L belong to the same patterned conductive layer, thereby reducing the number of photomasks required in the manufacturing process.

In this embodiment, the sensing layer gr of the light sensing element L is located higher than the first light emitting element D1, the second light emitting element D2, the third light emitting element D3, the fourth light emitting element D4, the fifth light emitting element D5 And the position of the sixth light-emitting element D6 The height difference h is between 1 micron and 25 microns.

The light i emitted by the first light emitting element D1 is reflected by the object to be measured OB and received by the sensing layer sr of the light sensing element L. Since the light sensing element L is located on the retaining wall 110. Therefore, the light i emitted by the first light-emitting element D1 needs to pass through fewer layers before reaching the sensing layer sr (at least the layer between the substrate 100 and the retaining wall 110 is not required). In this way, the photocurrent generated by the light sensing element L is better controlled, and the uniformity is better, which can reduce the problem of color or brightness unevenness (MURA).

In addition, the light-sensing element L is formed on the retaining wall 110, in addition to reducing the impact on the pixel aperture ratio, it can also prevent the light-sensing element L from being affected by other processes performed before the light-sensing element L is formed (For example, the process of forming the switching element T and the active element A).

2 is a schematic flowchart of an image processing method according to an embodiment of the invention.

Please refer to FIGS. 2 and 1A to 1C. The image processing method includes providing an image sensing and display device 10, scanning an object to be measured OB, signal calculation, and displaying an image.

The method of scanning the object to be measured OB includes lighting the first light-emitting element D1, the second light-emitting element D2, the third light-emitting element D3, the fourth light-emitting element D4, the fifth light-emitting element D5, and the sixth light-emitting element D6 at different times, The light-sensing element L receives the first light-emitting element D1, the second light-emitting element D2, the third light-emitting element D3, the fourth light-emitting element D4, the fifth light-emitting element D5 and the sixth light-emitting element D6 reflected by the object OB Light.

For example, the method of scanning the object to be tested OB includes: lighting the first light-emitting element In the component D1, the light sensing element L receives the light reflected by the object to be measured OB of the first light emitting element D1, and generates a first signal. Save the first signal. The first light emitting element D1 is turned off. The second light emitting element D2 is lit, and the light sensing element L receives the light reflected by the object to be measured OB from the second light emitting element D2 and generates a second signal. Save the second signal. The second light emitting element D2 is turned off. The third light emitting element D3 is turned on, and the light sensing element L receives the light reflected by the object to be measured OB from the third light emitting element D3 and generates a third signal. Save the third signal. The third light emitting element D3 is turned off. The fourth light emitting element D4 is lit, and the light sensing element L receives the light reflected by the object to be measured OB from the fourth light emitting element D4 and generates a fourth signal. Store the fourth signal. The fourth light emitting element D4 is turned off. The fifth light emitting element D5 is turned on, and the light sensing element L receives the light reflected by the object to be measured OB from the fifth light emitting element D5 and generates a fifth signal. Save the fifth signal. The fifth light-emitting element D5 is turned off. Turning on the sixth light emitting element D6, the light sensing element L receives the light reflected by the object to be measured OB from the sixth light emitting element D6, and generates a sixth signal. Store the sixth signal. The sixth light emitting element D6 is turned off.

After scanning the object to be tested OB, signal calculation is performed. For example, the first to sixth signals generated by the light sensing element L are calculated. After the signal operation, the image generated after the operation signal is displayed, for example, the image of the object to be measured OB. In some embodiments, the first light-emitting element D1, the second light-emitting element D2, the third light-emitting element D3, the fourth light-emitting element D4, the fifth light-emitting element D5, and the sixth light-emitting element D6 are located in the display area, when displaying an image , A part of the first light-emitting element D1, the second light-emitting element D2, the third light-emitting element D3, the fourth light-emitting element D4, the fifth light-emitting element D5, and the sixth light-emitting element D6 will be lit, actually lit The light emitting element depends on the shape and color of the image. In other words, in some embodiments, the first light emitting element D1, the second light-emitting element D2, the third light-emitting element D3, the fourth light-emitting element D4, the fifth light-emitting element D5 and the sixth light-emitting element D6 can be used not only for scanning the image of the object to be measured OB, but also for displaying the object to be measured OB images.

In this embodiment, the first light-emitting element D1, the second light-emitting element D2, the third light-emitting element D3, the fourth light-emitting element D4, the fifth light-emitting element D5, and the sixth light-emitting element D6 include red light-emitting elements, green light-emitting elements, and Blue light emitting element. In this embodiment, when the object to be measured OB is scanned, the light-emitting elements of different colors are lit at different times. Therefore, the image sensing display device 10 has the function of full-color scanning.

In this embodiment, the light-emitting elements of the same color are located at different positions. For example, the first light emitting element D1 and the fourth light emitting element D4 are located on both sides of the light sensing element L, the second light emitting element D2 and the fifth light emitting element D5 are located on both sides of the light sensing element L, and the first The three light-emitting elements D3 and the sixth light-emitting element D6 are located on both sides of the light sensing element L, respectively. Therefore, the light emitted by the light-emitting elements of the same color is reflected by the object to be measured OB at different incident angles, whereby a clearer image can be scanned.

In some embodiments, when the substitute object OB is scanned, the first light-emitting element D1, the second light-emitting element D2, the third light-emitting element D3, the fourth light-emitting element D4, the fifth light-emitting element D5, and the sixth light-emitting element D6 respectively Driven at frequency f1. When displaying images generated after computing signals (such as the first to sixth signals), the first light-emitting element D1, the second light-emitting element D2, the third light-emitting element D3, the fourth light-emitting element D4, the fifth light-emitting element D5 and the first At least part of the six light-emitting elements D6 is driven at a frequency f2, and the frequency f1 is greater than or equal to the frequency f2. Scanning at a higher frequency f1 can reduce the scanning required Time, displaying images at a lower frequency f2 can save the required power consumption.

In some embodiments, when the substitute object OB is scanned, the light-emitting elements of the same color light up at the same time. For example, the method of scanning the object-to-be-measured OB includes: simultaneously illuminating the first light-emitting element D1 and the fourth light-emitting element D4, and the light-sensing element L receiving the first light-emitting element D1 and the fourth light-emitting element D4 to-be-measured object OB The reflected light produces the first signal. Save the first signal. The first light emitting element D1 and the fourth light emitting element D4 are turned off. Simultaneously, the second light-emitting element D2 and the fifth light-emitting element D5 are turned on, and the light-sensing element L receives the light reflected by the object to be measured OB from the second light-emitting element D2 and the fifth light-emitting element D5, and generates a second signal. Save the second signal. The second light emitting element D2 and the fifth light emitting element D5 are turned off. Simultaneously, the third light-emitting element D3 and the sixth light-emitting element D6 are lit, and the light-sensing element L receives the light reflected by the third light-emitting element D3 and the sixth light-emitting element D6 from the object to be measured OB, and generates a third signal. Save the third signal. The third light emitting element D3 and the sixth light emitting element D6 are turned off.

Turning on both light-emitting elements at the same time can further reduce the time required for scanning.

3A is a schematic top view of an image sensing display device according to an embodiment of the invention. Fig. 3B is a schematic cross-sectional view taken along line cc' of Fig. 3A.

It must be noted here that the embodiments of FIGS. 3A and 3B continue to use the element numbers and parts of the embodiments of FIGS. 1A to 1C, wherein the same or similar reference numbers are used to indicate the same or similar elements, and the same is omitted Description of technical content. For the description of the omitted parts, reference may be made to the foregoing embodiments, which will not be repeated here.

The image sensing display device 10a of FIG. 3A and the image sensing display of FIG. 1A The main difference of the device 10 is that: in the image sensing display device 10, the first electrode e1 and the second electrode e2 respectively extend from the sensing layer sr in mutually opposite first direction X1 and second direction X2; the image sensing display device 10a, the first electrode e1 and the second electrode e2 respectively extend from the sensing layer sr in a first direction X1 and a second direction X2 that are orthogonal to each other.

Please refer to FIGS. 3A and 3B. In this embodiment, the first electrode e1 is connected to the first reflective layer 132, but the present invention is not limited thereto. In other embodiments, the first electrode e1 is separated from the first reflective layer 132.

In this embodiment, the first light emitting element D1, the second light emitting element D2, the third light emitting element D3, the fourth light emitting element D4, the fifth light emitting element D5, and the sixth light emitting element D6 are vertical light emitting elements. Taking the first light-emitting element D1 as an example, the first light-emitting element D1 is connected to the first connection structure C1 and the second connection structure C2, and the first connection structure C1 and the second connection structure C2 are respectively connected to the lower side of the first light-emitting element D1 With the upper side. In this embodiment, the first electrode e1, the first reflective layer 132 and the first connection structure C1 belong to the same patterned conductive layer. In some embodiments, the first connection structure C1 is metal, and the second connection structure C2 is a transparent conductive material, thereby improving light utilization.

4 is a schematic cross-sectional view of an image sensing display device according to an embodiment of the invention.

It must be noted here that the embodiment of FIG. 4 continues to use the element labels and partial contents of the embodiments of FIGS. 1A to 1C, wherein the same or similar reference numerals are used to indicate the same or similar elements, and the same technical content is omitted. Instructions. About omitting For some descriptions, reference may be made to the foregoing embodiment, which is not repeated here.

Referring to FIG. 4, the light sensing element L of the image sensing display device 10b is located on the corresponding retaining wall 110a, and the retaining walls 110b and 110c are adjacent to the retaining wall 110a. In this embodiment, the first light emitting element D1 is located between the retaining wall 110a and the retaining wall 110b, and the fourth light emitting element D4 is located between the retaining wall 110a and the retaining wall 110c.

The first reflective layer 132 is located on the retaining wall 110a, and the second reflective layer 134 is located on the retaining wall 110b, 110c. The first reflective layer 132 is closer to the light sensing element L than the second reflective layer 134, and the height of the first reflective layer 132 is lower than the height of the second reflective layer 134. In this way, the first reflective layer 132 is less likely to interfere with the light sensing element L, and the first reflective layer 132 and the second reflective layer 134 can make the light emitted by the light emitting element more concentrated and increase the utilization rate of the light.

5 is a schematic top view of an image sensing display device according to an embodiment of the invention.

It must be noted here that the embodiment of FIG. 5 continues to use the element numbers and partial contents of the embodiment of FIGS. 1A to 1C, wherein the same or similar reference numbers are used to indicate the same or similar elements, and the same technical content is omitted. Instructions. For the description of the omitted parts, reference may be made to the foregoing embodiments, which will not be repeated here.

The main difference between the image sensing display device 10c of FIG. 5 and the image sensing display device 10 of FIG. 1A is that the arrangement position of the second light emitting element D2 and the third light emitting element D3 in the image sensing display device 10 is different from the image sensing The arrangement position of the second light emitting element D2 and the third light emitting element D3 in the display device 10c.

In the embodiment of FIG. 1A, the second light emitting element D2 is located in the first light emitting element The component D1 is in the second direction Z2, and the third light emitting element D3 is located in the first direction Z1 of the first light emitting element D1. In the embodiment of FIG. 5, the second light emitting element D2 is located in the first direction Z1 of the first light emitting element D1, and the third light emitting element D3 is located in the second direction Z2 of the first light emitting element D1.

6 is a schematic top view of an image sensing display device according to an embodiment of the invention.

It must be noted here that the embodiment of FIG. 6 uses the element numbers and partial contents of the embodiment of FIG. 5, wherein the same or similar reference numerals are used to indicate the same or similar elements, and the description of the same technical content is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, which will not be repeated here.

The main difference between the image sensing display device 10d of FIG. 6 and the image sensing display device 10c of FIG. 5 is that the arrangement position of the first light emitting element D1 and the fourth light emitting element D4 in the image sensing display device 10c is different from the image sensing The arrangement position of the first light-emitting element D1 and the fourth light-emitting element D4 in the display device 10d.

In the embodiment of FIG. 6, the first light emitting element D1 is located in the second direction Z2 of the retaining wall 110, and the fourth light emitting element D4 is located in the first direction Z1 of the retaining wall 110.

Although FIG. 1A, FIG. 5 and FIG. 6 list three kinds of arrangement positions of the first light emitting element D1, the second light emitting element D2, the third light emitting element D3, the fourth light emitting element D4, the fifth light emitting element D5 and the sixth light emitting element D6 , But the invention is not limited to this. The first light-emitting element D1, the second light-emitting element D2, the third light-emitting element D3, the fourth light-emitting element D4, the fifth light-emitting element D5, and the sixth light-emitting element D6 may also be arranged in other ways.

7 is a schematic top view of an image sensing display device according to an embodiment of the invention.

It must be noted here that the embodiment of FIG. 7 continues to use the element labels and partial contents of the embodiments of FIGS. 1A to 1C, wherein the same or similar reference numerals are used to indicate the same or similar components, and the same technical content is omitted. Instructions. For the description of the omitted parts, reference may be made to the foregoing embodiments, which will not be repeated here.

Referring to FIG. 7, the image sensing display device 10e includes a substrate 100, a sensing unit 120a, a sensing unit 120b, a sensing unit 120c, a sensing unit 120d, a retaining wall 110a, a retaining wall 110b, a pixel control element 200a and a picture素控制元件200b.

The light sensing element L of the sensing unit 120a and the light sensing element L of the sensing unit 120b are located on the same retaining wall 110a, and the light sensing element L of the sensing unit 120a and the light sensing element of the sensing unit 120b L shares the same second electrode e2.

The light sensing element L of the sensing unit 120c and the light sensing element L of the sensing unit 120d are located on the same retaining wall 110b, and the light sensing element L of the sensing unit 120c and the light sensing element of the sensing unit 120d L shares the same second electrode e2.

The pixel control element 200a is located between the adjacent sensing unit 120a and the sensing unit 120c. The pixel control element 200b is located between the adjacent sensing unit 120b and the sensing unit 120d.

The light sensing element L and the pixel control element 200a or the pixel control element 200b are alternately arranged in the third direction Z3.

In some embodiments, the pixel control element 200a and the pixel control element 200b include driving chips, thin film transistors, or other driving elements.

By disposing the pixel control element 200a and the pixel control element 200b between adjacent sensing units, the space utilization rate of the circuit layout can be increased. In addition, the pixel control element 200a and the pixel control element 200b are disposed in the display area, so that the image sensing display device has the advantage of a narrow frame.

8 is a schematic top view of an image sensing display device according to an embodiment of the invention.

It must be noted here that the embodiment of FIG. 8 follows the element numbers and partial contents of the embodiment of FIG. 7, wherein the same or similar reference numerals are used to indicate the same or similar elements, and the description of the same technical content is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, which will not be repeated here.

The main difference between the image sensing display device 10f of FIG. 8 and the image sensing display device 10e of FIG. 7 is that: in the image sensing display device 10e, a plurality of sensing units are provided corresponding to one retaining wall; in the image sensing display device 10f , One sensing unit corresponds to one retaining wall setting.

Please refer to FIG. 8, the image sensing display device 10f includes a substrate 100, a sensing unit 120a, a sensing unit 120b, a sensing unit 120c, a sensing unit 120d, a retaining wall 110a, a retaining wall 110b, a retaining wall 110c, a retaining wall 110d , A pixel control element 200a and a pixel control element 200b.

The light sensing element L of the sensing unit 120a is disposed on the retaining wall 110a. The light sensing element L of the sensing unit 120c is disposed on the retaining wall 110c. The two adjacent sensing units 120a and 120c respectively correspond to the two adjacent retaining walls 110a and 110c, and the two adjacent retaining walls 110a and 110c are separated from each other.

The light sensing element L of the sensing unit 120b is disposed on the retaining wall 110b. The light sensing element L of the sensing unit 120d is disposed on the retaining wall 110d. The two adjacent sensing units 120b and 120d respectively correspond to the two adjacent retaining walls 110b and 110d, and the two adjacent retaining walls 110b and 110d are separated from each other.

In this embodiment, the retaining walls 110a to 110d corresponding to the different sensing units 120a to 120d are separated from each other, thereby improving the problem of mutual interference between adjacent sensing units 120a to 120d.

In summary, in the image sensing display device of the present invention, the light emitted by the light-emitting element needs to pass through fewer layers before reaching the sensing layer (at least, the layer between the substrate and the retaining wall is not required). In this way, the photocurrent generated by the light sensing element is better controlled and the uniformity is better, which can reduce the problem of color or brightness unevenness (MURA).

In addition, the light-sensing element is formed on the retaining wall, in addition to reducing the impact on the pixel aperture ratio, it can also prevent the light-sensing element from being affected by other processes performed before forming the light-sensing element (for example, forming a switch Process of components and active components).

Although the present invention has been disclosed as above with examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be subject to the scope defined in the appended patent application.

10‧‧‧Image sensing display device

100‧‧‧ substrate

110‧‧‧Retaining wall

120‧‧‧sensing unit

132‧‧‧Reflective layer

D1~D6‧‧‧‧Lighting element

e1, e2‧‧‧electrode

O2, O3‧‧‧ opening

L‧‧‧Light sensing element

sr‧‧‧sensing layer

X1, X2, Z1, Z2

Claims (13)

  1. An image sensing display device includes: a substrate; a plurality of baffles on the substrate; and a plurality of sensing units on the substrate, each of the sensing units includes: a first light emitting element, a second The light emitting element, a third light emitting element and a fourth light emitting element are located around the corresponding retaining wall, wherein the first light emitting element, the second light emitting element and the third light emitting element include a red light emitting element, a green light emitting element and a blue light emitting element Color light-emitting element, and the first light-emitting element and the fourth light-emitting element are light-emitting elements of the same color; and a light-sensing element located on the corresponding retaining wall, the light-sensing element includes: a first electrode, A second electrode and a sensing layer between the first electrode and the second electrode, wherein the first electrode and the second electrode extend from the sensing layer in a first direction and a second direction, respectively , The first direction is different from the second direction.
  2. The image sensing display device as described in item 1 of the patent application scope further includes a first reflective layer located on the corresponding retaining wall, and the first reflective layer is separated from the first electrode and the second electrode.
  3. The image sensing display device as described in item 2 of the patent application scope, wherein the first light emitting element is connected to a first connection structure and a second connection structure, and the first reflective layer and the first connection structure belong to the same Pattern the conductive layer.
  4. The image sensing display device as described in item 3 of the patent application range, wherein the first light-emitting element is a vertical light-emitting element, and the first connection structure and the second connection structure are respectively connected to the lower side of the first light-emitting element With the upper side.
  5. The image sensing display device as described in item 4 of the patent application scope, wherein the first connection structure is metal, and the second connection structure is a transparent conductive material.
  6. The image sensing display device as described in item 2 of the patent application scope further includes a second reflective layer located on another retaining wall adjacent to the corresponding retaining wall, wherein the first reflective layer is compared to the The second reflective layer is closer to the light sensing element, and the height of the first reflective layer is lower than the height of the second reflective layer.
  7. The image sensing display device as described in item 1 of the patent application scope, wherein each of the sensing units further includes an active element located under the corresponding retaining wall.
  8. The image sensing display device as described in item 1 of the patent application scope further includes a pixel control element located between two adjacent sensing units.
  9. The image sensing display device as described in item 1 of the patent application range, wherein two adjacent sensing units respectively correspond to two adjacent retaining walls, and the two adjacent retaining walls are separated from each other.
  10. An image processing method includes: providing an image sensing display device including: a substrate; a plurality of baffles on the substrate; and a plurality of sensing units on the substrate, each of which The sensing unit includes: a first light-emitting element, a second light-emitting element, a third light-emitting element, and a fourth light-emitting element, located around the corresponding barrier wall, wherein the first light-emitting element, the second light-emitting element, and the The third light-emitting element includes a red light-emitting element, a green light-emitting element and a blue light-emitting element, and the first light-emitting element and the fourth light-emitting element are light-emitting elements of the same color; and a light-sensing element located on the corresponding retaining wall The light-sensing element includes: a first electrode, a second electrode, and a sensing layer between the first electrode and the second electrode, wherein the first electrode and the second electrode are respectively from the The sensing layer extends in a first direction and a second direction, the first direction is different from the second direction; scanning an object to be measured, the method includes: the light sensing element receives the first light emitting element to be measured Light reflected by the object; the light-sensing element receives light reflected by the second light-emitting element from the object to be measured; the light-sensing element receives light reflected by the third light-emitting element from the object to be measured; the light-sensing element Receiving light reflected by the fourth light-emitting element from the object to be measured; calculating a plurality of signals generated by the light-sensing element; and displaying images generated after calculating the signals.
  11. According to the method described in item 10 of the patent application scope, the method of scanning the object to be tested further comprises: the light sensing element receives the light reflected by the first light emitting element from the object to be tested and generates a first signal; The first signal; the light-sensing element receives the light reflected by the object under test from the second light-emitting element and generates a second signal; stores the second signal; the light-sensing element receives the third light-emitting element The light reflected by the object under test generates a third signal; the third signal is stored; the light-sensing element receives the light reflected by the fourth light-emitting element from the object under test and generates a fourth signal; the signal is stored The fourth signal; computing the first signal, the second signal, the third signal, and the fourth signal; and displaying the result of computing the first signal, the second signal, the third signal, and the fourth signal image.
  12. The method according to item 10 of the patent application scope, wherein the first light emitting element and the fourth light emitting element are simultaneously lit.
  13. The method according to item 10 of the patent application scope, wherein when scanning the substitute object, the first light-emitting element, the second light-emitting element, the third light-emitting element, and the fourth light-emitting element are driven at a frequency f1, respectively; When displaying images generated after computing the signals, at least part of the first light-emitting element, the second light-emitting element, the third light-emitting element, and the fourth light-emitting element are driven at the frequency f2, and the frequency f1 is greater than the frequency f2 .
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