TWI609214B - Pixel structure - Google Patents

Description

Pixel structure

The present invention relates to a pixel structure.

Among various consumer electronic products, liquid crystal displays using thin film transistors (TFTs) have been widely used. The liquid crystal display is mainly composed of a thin film transistor array substrate, a color filter array substrate and a liquid crystal layer. The thin film transistor array substrate comprises a plurality of pixel structures, and the thin film transistor array substrate is provided with a plurality of thin film electrodes arranged in an array. A crystal, and a pixel electrode corresponding to each of the thin film transistors. In addition, a metal layer is also disposed on the thin film transistor array substrate as a data line or a scan line.

However, if parasitic capacitance is generated in the pixel structure, the performance of the pixel structure may be affected by this parasitic capacitance. Furthermore, when the components in the pixel structure are different from the original design due to process variation, the effect of the generated parasitic capacitance may be greater, and thus the display quality of the liquid crystal display may be affected.

An embodiment of the present invention provides a pixel structure including a data line, a first auxiliary electrode, a second auxiliary electrode, and a pixel electrode, wherein the data line, The first auxiliary electrode and the second auxiliary electrode can be formed through the same process. The first auxiliary electrode and the second auxiliary electrode are respectively located on the left and right sides of the data line. When the pixel structure is in operation, the first auxiliary electrode and the second auxiliary electrode respectively generate a coupling capacitance with the data line, and the magnitude of the coupling capacitance is greater than the magnitude of the coupling capacitance generated by the pixel electrode and the data line. Therefore, the coupling capacitance generated by the first auxiliary electrode and the second auxiliary electrode and the data line, even if the formation position of the pixel electrode is shifted and the coupling capacitance value with the data line changes, the data line and the two The coupling capacitance difference value of the side charged layer structure still falls within the allowable range, thereby preventing the liquid crystal display from producing a bright dark line.

An embodiment of the present invention provides a pixel structure including a data line, a first active device, a second active device, a first auxiliary electrode, and a second auxiliary electrode. The first active component and the second active component respectively include a first drain and a second drain. The first auxiliary electrode and the second auxiliary electrode are directly connected to the first drain and the second drain, respectively, wherein the data line is located between the first auxiliary electrode and the second auxiliary electrode.

In some embodiments, the horizontal distance between the data line and the first auxiliary electrode is approximately equal to the horizontal distance between the data line and the second auxiliary electrode.

In some embodiments, the pixel structure further includes a first pixel electrode and a second pixel electrode. The first pixel electrode is located above the first auxiliary electrode. The second pixel electrode is located above the second auxiliary electrode, and the first pixel electrode and the second pixel electrode are respectively located on opposite sides of the data line. The minimum horizontal distance between the first auxiliary electrode and the second auxiliary electrode is smaller than the minimum horizontal distance between the first pixel electrode and the second pixel electrode, wherein the minimum horizontal distance between the first pixel electrode and the data line is different The minimum horizontal distance between the second pixel electrode and the data line.

In some embodiments, the pixel structure further includes a first light shielding layer and a second light shielding layer. The first auxiliary electrode is located at least above the first light shielding layer. The second auxiliary electrode is located at least above the second light shielding layer, and a horizontal distance between the first light shielding layer and the second light shielding layer is smaller than a horizontal distance between the first auxiliary electrode and the second auxiliary electrode.

In some embodiments, the pixel structure further includes a third active component. The third active component includes a third drain, wherein the data line is electrically connected to the second active component and the third active component, and the second drain of the second active component and the third drain of the third active component are respectively located in the data The opposite sides of the line.

In some embodiments, the data line extends in the first direction, and the second active element and the third active element are continuously arranged in the first direction.

In some embodiments, the pixel structure further includes a first insulating layer and a second insulating layer. The data line, the first auxiliary electrode and the second auxiliary electrode are located on the first insulating layer. The second insulating layer is located above the data line, the first auxiliary electrode, the second auxiliary electrode, and the first insulating layer.

In some embodiments, the pixel structure is disposed on the substrate, and the vertical projection of the first pixel electrode on the substrate and the vertical projection of the first auxiliary electrode on the substrate at least partially overlap, and the vertical projection of the second pixel electrode on the substrate A vertical projection with the second auxiliary electrode on the substrate at least partially overlaps.

100A, 100B‧‧‧ pixel structure

102‧‧‧Substrate

130‧‧‧ first pixel electrode

132‧‧‧Second pixel electrode

104‧‧‧First scan line

105‧‧‧Second scan line

106‧‧‧First data line

107‧‧‧Second data line

110‧‧‧First active component

112‧‧‧first source

114‧‧‧First bungee

116‧‧‧Second active components

118‧‧‧Second source

120‧‧‧Second bungee

122‧‧‧ Third active component

124‧‧‧ third source

126‧‧‧third bungee

128‧‧‧First auxiliary electrode

129‧‧‧Second auxiliary electrode

134‧‧‧ third pixel electrode

140‧‧‧First insulation

142‧‧‧Second insulation

150‧‧‧ first light shielding layer

152‧‧‧ second light shielding layer

A-A’, C-C’, D-D’, F-F’, G-G’‧‧‧ segments

B, E‧‧‧ area

D1‧‧‧ first direction

D2‧‧‧ second direction

L1, L2, L3, L4, L5, L6, L7, L8‧‧‧ distance

FIG. 1A is a top plan view showing a pixel structure according to a first embodiment of the present disclosure.

Fig. 1B is an enlarged view of a region B of Fig. 1A.

Fig. 1C is a schematic cross-sectional view taken along line C-C' of Fig. 1B.

FIG. 2A is a top view showing a state in which the pixel electrode of the pixel structure of the first embodiment is shifted, wherein the area depicted in FIG. 2A is the same as that in FIG. 1B.

Fig. 2B is a schematic cross-sectional view taken along line D-D' of Fig. 2A.

FIG. 3A is a top plan view of a pixel structure according to a second embodiment of the present disclosure.

Fig. 3B is an enlarged view of a region E of Fig. 3A.

Fig. 3C is a schematic cross-sectional view taken along line F-F' of Fig. 3B.

FIG. 4A is a top view showing a state in which the pixel electrode of the pixel structure of the second embodiment is shifted, wherein the area depicted in FIG. 4A is the same as that in FIG. 3B.

Fig. 4B is a schematic cross-sectional view of the line segment G-G' taken along line 4A.

The embodiments of the present invention are disclosed in the following drawings, and the details of However, it should be understood that these practical details are not intended to limit the invention. That is, in some embodiments of the invention, these practical details are not necessary. In addition, some of the conventional structures and elements are shown in the drawings in a simplified schematic manner in order to simplify the drawings.

The words "first, second, third, etc." are used herein to describe various elements, components, regions, and layers. but These elements, components, regions, and layers should not be limited by these terms. These terms are used to identify a single element, component, region, or layer. Thus, a singular element, component, region, or layer may be hereinafter referred to as a second element, component, region, layer, without departing from the spirit of the invention.

Please refer to FIG. 1A , wherein FIG. 1A is a top view of the pixel structure 100A according to the first embodiment of the present disclosure. The pixel structure 100A is disposed on the substrate 102 and includes a first scan line 104, a second scan line 105, a first data line 106, a second data line 107, a first active device 110, a second active device 116, and a third The active element 122, the first auxiliary electrode 128, the second auxiliary electrode 129, the first pixel electrode 130, the second pixel electrode 132, and the third pixel electrode 134.

The first scan line 104 and the second scan line 105 are sequentially arranged in the first direction D1 on the substrate 102 and extend in the second direction D2, wherein the first direction D1 is different from the second direction D2, for example, the first direction D1 and the first The two directions D2 can be in an orthogonal relationship. The first data line 106 and the second data line 107 are sequentially arranged on the substrate 102 in the second direction D2 and extend in the first direction D1. The scan lines 104, 105 and the data lines 106, 107 are interleaved to define a first pixel area (not labeled), a second pixel area (not labeled), and a third pixel area (not labeled) on the substrate 102. The first pixel area may be defined by the first scan line 104, the second scan line 105, the first data line 106, and the second data line 107. The first pixel region and the second pixel region are two pixel regions arranged in a continuous direction along the second direction D2 on the substrate 102, and the first pixel region and the third pixel region are in the first direction on the substrate 102. Two pixel regions of D1 that are consecutively arranged.

The first active component 110, the second active component 116, and the third active The element 122 is, for example, a thin film transistor (TFT). The first active device 110 includes a first gate (not labeled), a first source 112, and a first drain 114. The first gate and the first source 112 of the first active device 110 are respectively connected to the first scan line. 104 and the first data line 106 are electrically connected. The second active device 116 includes a second gate (not labeled), a second source 118, and a second drain 120. The second gate and the second source 118 of the second active device 116 are respectively connected to the first scan line. 104 and the second data line 107 are electrically connected. In addition, the first active component 110 and the second active component 116 are, for example, two active components that are continuously arranged in the second direction D2. The third active device 122 includes a third gate (not labeled), a third source 124 and a third drain 126, wherein the third gate and the third source 124 of the third active device 122 are respectively connected to the second scan line 105 and the second data line 107 are electrically connected. In addition, the second drain 120 of the second active component 116 and the third drain 126 of the third active component 122 are respectively located on opposite sides (ie, left and right sides) of the second data line 107, and the second active component 116 The third active component 122 can be two active components of the second data line 107 that are consecutively arranged in the first direction D1. In addition, the first pixel electrode 130, the second pixel electrode 132, and the third pixel electrode 134 are respectively disposed in the first pixel region, the second pixel region, and the third pixel region, and are respectively The active component 110, the second active component 116, and the third active component 122 are controlled. For ease of observation, the active elements of the present disclosure do not depict a channel layer, but are not intended to limit the invention.

Through the above configuration, the pixel electrodes corresponding to the same data line in the pixel structure 100A can be in a zig-zag configuration. In the zigzag configuration, when the pixel structure 100A operates, the pixel electrodes on the left and right sides of a single data line may have opposite potentials. For example, the second data line in the same column The first pixel electrode 130 on the left side of 107 and the second pixel electrode 132 on the right side thereof may be driven to have potentials of opposite polarities. Through the zigzag configuration, the number of polarity of the data line potential level can be reduced under the solid color screen, which can effectively reduce the power consumption.

The first auxiliary electrode 128 and the second auxiliary electrode 129 are respectively disposed in the first pixel region and the second pixel region, and the first auxiliary electrode 128 and the second auxiliary electrode 129 are respectively connected to the first drain 114 and the second The drain 120 is directly connected. For example, the first auxiliary electrode 128 and the first drain 114 may be formed of the same metal layer. The second data line 107 is located between the first auxiliary electrode 128 and the second auxiliary electrode 129. The second data line 107, the first auxiliary electrode 128, and the second auxiliary electrode 129 may also be formed by the same metal layer, that is, the second data. The line 107, the first auxiliary electrode 128, the second auxiliary electrode 129, the first drain 114, and the second drain 120 may be formed of the same metal layer. In addition, the vertical projection of the first pixel electrode 130 on the substrate 102 and the vertical projection of the first auxiliary electrode 128 on the substrate 102 at least partially overlap, and the vertical projection of the second pixel electrode 132 on the substrate 102 is also combined with the second auxiliary electrode 129. The vertical projections on the substrate 102 at least partially overlap, as shown in FIG. 1A.

Please refer to FIG. 1B and FIG. 1C again, wherein FIG. 1B is an enlarged view of a region B of FIG. 1A, and FIG. 1C is a schematic cross-sectional view taken along line C-C' of FIG. 1B. As shown in FIG. 1C , the pixel structure 100A further includes a first insulating layer 140 and a second insulating layer 142 , wherein the second data line 107 , the first auxiliary electrode 128 , and the second auxiliary electrode 129 are located on the first insulating layer 140 . The second insulating layer 142 is located above the second data line 107, the first auxiliary electrode 128, the second auxiliary electrode 129, and the first insulating layer 140. First pixel electrode 130 and second pixel electrode The 132 is located on the second insulating layer 142 and is located above the first auxiliary electrode 128 and the second auxiliary electrode 129, respectively.

The horizontal distance between the second data line 107 and the first auxiliary electrode 128 is approximately equal to the horizontal distance between the second data line 107 and the second auxiliary electrode 129. For example, the minimum horizontal distance between the second data line 107 and the first auxiliary electrode 128 may be the distance L1 marked in FIG. 1B and FIG. 1C, and the minimum between the second data line 107 and the second auxiliary electrode 129. The horizontal distance may be the distance L2 marked in FIG. 1B and FIG. 1C, and the distance L1 is approximately equal to the distance L2. In addition, since the second data line 107, the first auxiliary electrode 128, and the second auxiliary electrode 129 can be formed by the same metal layer, the relationship between the distance L1 and the distance L2 is not easily affected by the process variation.

The horizontal distance between the first auxiliary electrode 128 and the second auxiliary electrode 129 is smaller than the horizontal distance between the first pixel electrode and the second second pixel electrode 132. For example, the minimum horizontal distance between the first auxiliary electrode 128 and the second auxiliary electrode 129 may be between the first pixel electrode 130 and the second pixel electrode 132 as shown in FIG. 1B and FIG. 1C. The minimum horizontal distance may be the distance L4 marked in FIG. 1B and FIG. 1C, and the distance L3 is smaller than the distance L4.

In this configuration, when the first pixel electrode 130 and the second pixel electrode 132 are driven by the first active device 110 (see FIG. 1A) and the second active device 116 (see FIG. 1A), respectively, the potential is applied. The first auxiliary electrode 128 and the second auxiliary electrode 129 and the second data line 107 respectively generate a coupling capacitance, and the first pixel electrode 130 and the second pixel electrode 132 also generate a coupling capacitance with the second data line 107, respectively. . Wherein, when the distance between the first pixel electrode 130 and the second data line 107 is approximately equal to between the second pixel electrode 132 and the second data line 107 When the distance is different, the coupled capacitance values respectively generated by the second data line 107 may be substantially the same or within 15% of the difference.

On the other hand, since the distance between the first auxiliary electrode 128 (or the second auxiliary electrode 129) and the second data line 107 is smaller than the distance between the first pixel electrode 130 (or the second pixel electrode 132) and the second data line 107 Therefore, the coupling capacitance value of the first auxiliary electrode 128 (or the second auxiliary electrode 129) and the second data line 107 may be greater than the first pixel electrode 130 (or the second pixel electrode 132) and the second data line 107. Coupling capacitance value. That is to say, among the coupling capacitances of the second data line 107 and the charged layer structure on both sides thereof, the coupling capacitance generated by the first auxiliary electrode 128 and the second auxiliary electrode 129 and the second data line 107 can be used as the main The factor, and the coupling capacitance generated by the first pixel electrode 130 or the second pixel electrode 132 and the second data line 107 is a secondary factor. In addition, since the first auxiliary electrode 128 and the second auxiliary electrode 129 are directly connected to the first drain electrode 114 and the second drain electrode 120, respectively, the first auxiliary electrode 128 and the second auxiliary electrode 129 have a potential instead of being in a floating state. (floating) such that the coupled capacitance value as the main factor does not substantially float.

Therefore, when the processes of the first pixel electrode 130 and the second pixel electrode 132 are mutated, for example, when the formation positions of the first pixel electrode 130 and the second pixel electrode 132 are shifted, the main factor of the coupling capacitance is The first auxiliary electrode 128 and the second auxiliary electrode 129 are relatively difficult to be offset from the formation position of the second data line 107, so that the difference in coupling capacitance between the second data line 107 and the charged layer structure on both sides thereof is prevented from being excessively large. In turn, the generation of bright and dark lines is prevented.

The following is an example of the situation when the pixel electrode is shifted. Please see Figures 2A and 2B. FIG. 2A illustrates the pixel knot when the first embodiment A top view of the pixel electrode of the structure 100A is shifted, wherein the area depicted in FIG. 2A is the same as that in FIG. 1B. Fig. 2B is a schematic cross-sectional view taken along line D-D' of Fig. 2A. The first pixel electrode 130 and the second pixel electrode 132 depicted in FIGS. 2A and 2B are compared to the first pixel electrode 130 and the second pixel electrode 132 depicted in FIGS. 1B and 1C. It is slightly offset to the right. Specifically, in FIGS. 2A and 2B, the horizontal distance between the first pixel electrode 130 and the second data line 107 may be different from the level between the second pixel electrode 132 and the second data line 107. For example, the minimum horizontal distance between the first pixel electrode 130 and the second data line 107 may be the distance L5 marked in FIGS. 2A and 2B, and the second pixel electrode 132 and the second data line 107. The minimum horizontal distance between them may be as the distance L6 marked in FIGS. 2A and 2B, and the distance L5 is smaller than the distance L6.

In FIGS. 2A and 2B, when the first pixel electrode 130 and the second pixel electrode 132 are shifted to the right, the first pixel electrode 130 and the second data line 107 are shortened by the horizontal distance therebetween. As a result, the coupling capacitance value rises therebetween, and the second pixel electrode 132 and the second data line 107 decrease in the coupling capacitance value therebetween due to an increase in the horizontal distance therebetween. However, as described above, the coupling capacitance value generated by the first auxiliary electrode 128 (or the second auxiliary electrode 129) and the second data line 107 is larger than the first pixel electrode 130 (or the second pixel electrode 132). The coupling capacitance value generated by the second data line 107 is different from the coupling capacitance value generated by the first pixel electrode 130 and the second pixel electrode 132 and the second data line 107, but the second data line 107 is different. The difference in coupling capacitance between the charged layer structures on both sides can still fall within an allowable range.

For example, please see Table 1, where Table 1 is the simulation result of the coupling capacitance difference value of the comparative example and the experimental example, and the comparative example is that the first auxiliary power is not used. The pixel structure of the pole and the second auxiliary electrode, and the experimental example is a pixel structure using the first auxiliary electrode and the second auxiliary electrode, wherein the structure in which the pixel electrode offset is 0 micrometer in the experimental example can be identical 1A to 1C, and the structure in which the pixel offset of the pixel is 2 micrometers in the experimental example can be similar to that of FIG. 2A and FIG. 2B. In addition, regarding each parameter in Table 1, "pixel pixel offset" indicates the difference between the preset position of the pixel electrode and the actual position of the formed pixel electrode; "left coupled capacitance value" and "right side" The coupled capacitance value indicates the coupling capacitance value generated by the data line and the charged layer structure on the left and right sides, respectively; the "coupling capacitance difference value" indicates "the left coupling capacitance value" and the "right coupling capacitance value". The larger one is subtracted from the smaller one; the "coupling capacitance difference multiple" indicates the multiple of the coupling capacitance difference value when the offset is 2 μm and the coupling capacitance difference value when the offset is 0 μm.

As can be seen from the results of Table 1, in the comparative example, the difference in coupling capacitance between the data line and the pixel electrode is 15.78 times. In the experimental example, the difference in coupling capacitance between the data line and the charged layer structure on the left and right sides The multiple is 4.09 times. That is to say, when the pixel electrode is offset, the coupling capacitance between the data line and the charged layer structure on both sides thereof can be reduced by the auxiliary electrode, so that the coupling capacitance difference value still falls within an allowable range. In turn, the pixel structure is prevented from having a bright dark line.

In addition, although FIGS. 1A to 1C and FIGS. 2A to 2B are arranged in a zigzag-type pixel electrode arrangement corresponding to the same data line, the above configuration is merely an example, and the auxiliary electrode is illustrated. The effect that can be exerted in the prime structure, in other words, the auxiliary electrode can also be placed in other forms of pixel electrode configuration, and provides the effect of reducing the coupling capacitance difference value when the pixel electrode is offset.

3A, 3B, and 3C, wherein FIG. 3A is a top view of the pixel structure 100B according to the second embodiment of the present disclosure, and FIG. 3B is a third FIG. An enlarged view of the area E, and a 3C view is a schematic cross-sectional view of the line segment F-F' along the 3B. At least one difference between the embodiment and the first embodiment is that the pixel structure 100B further includes a first light shielding layer 150 and a second light shielding layer 152, wherein the first light shielding layer 150 and the second light shielding layer 152 are respectively located in the first painting Among the prime regions and the second pixel regions, the first insulating layer 140 is covered. Similar to the first embodiment, the first pixel area is located between the first data line 106 and the second data line 107, and the first pixel area and the second pixel area are consecutively arranged in the horizontal direction. The pixel area.

As shown in FIG. 3C, the first auxiliary electrode 128 and the first pixel electrode 130 are located above the first light shielding layer 150. The second auxiliary electrode 129 and the second pixel electrode 132 are located above the second light shielding layer 152, and the horizontal distance between the first light shielding layer 150 and the second light shielding layer 152 is smaller than the first auxiliary electrode 128 and the second auxiliary power The horizontal distance between poles 129. For example, the minimum horizontal distance between the first light shielding layer 150 and the second light shielding layer 152 may be the distance L7 marked in FIGS. 3B and 3C, and the minimum between the first auxiliary electrode 128 and the second auxiliary electrode 129. The horizontal distance may be the distance L8 marked as in FIGS. 3B and 3C, and the distance L7 is smaller than the distance L8.

In addition, the first scan line 104, the second scan line 105, the first light shielding layer 128, and the second light shielding layer 129 may be patterned by the same film material, for example, may be made of the same metal layer. By providing the first light shielding layer 150 and the second light shielding layer 152, the first pixel electrode 130 can be further provided under the condition that the difference in the coupling capacitance between the second data line 107 and the charged layer structure on both sides thereof is prevented from being excessively large. The second pixel electrode 132 has a light blocking effect at the edge, thereby improving the display quality of the pixel structure 100B.

Please see the 4A and 4B pictures. FIG. 4A is a top view showing a state in which the pixel electrode of the pixel structure 100B of the second embodiment is shifted, wherein the area depicted in FIG. 4A is the same as that in FIG. 3B, and the fourth FIG. A schematic cross-sectional view of line segment G-G' of Figure 4A. The first pixel electrode 130 and the second pixel electrode 132 depicted in FIGS. 4A and 4B are compared to the first pixel electrode 130 and the second pixel electrode 132 depicted in FIGS. 3B and 3C. In order to shift to the right, the first pixel electrode 130 and the second data line 107 of FIGS. 4A and 4B are caused by the shortening of the distance between them, and the resulting coupling capacitance value is increased, and the second drawing is performed. The element electrode 132 and the second data line 107 decrease the value of the coupled capacitance due to an increase in the distance therebetween. As described above, the difference in coupling capacitance between the second data line 107 and the charged layer structure on both sides thereof through the first auxiliary electrode 128 and the second auxiliary electrode 129 still falls within an allowable range.

For example, please see Table 2, where Table 2 shows the simulation results of the coupling capacitance difference between the comparative example and the experimental example. In Table 2, the comparative example is the comparative example of the same as Table 1, that is, the pixel structure in which the first auxiliary electrode and the second auxiliary electrode are not used, and the experimental example is the pixel structure using the first auxiliary electrode and the second auxiliary electrode. The structure in which the pixel offset of the pixel is 0 micrometer in the experimental example can be similar to that of the 3A to 3C, and the structure in which the pixel offset of the pixel is 2 micrometers in the experimental example can be the same. 4A and 4B. In addition, the definitions of the parameters in Table 2 can be the same as in Table 1, and will not be repeated here.

It can be seen from the results of Table 2 that in the comparative example, the difference in coupling capacitance between the pixel electrode and the data line is 15.78 times. In the experimental example, the difference in coupling capacitance between the data line and the charged layer structure on both sides is 4.5 times. In other words, under the condition that the first light shielding layer and the second light shielding layer are disposed, the auxiliary electrode can prevent the difference in the coupling capacitance between the data line and the charged layer structure on both sides due to the offset of the pixel electrode. The situation has occurred. That is, even if the light shielding layer and the auxiliary electrode are simultaneously disposed in the same pixel structure, The number electrode can still exert its effect of stabilizing the capacitance difference value.

In summary, the pixel structure of the present disclosure includes a data line, a first auxiliary electrode, a second auxiliary electrode, and a pixel electrode, wherein the data line, the first auxiliary electrode, and the second auxiliary electrode are formed through the same process. The first auxiliary electrode and the second auxiliary electrode are respectively located on the left and right sides of the data line. When the pixel structure is in operation, the first auxiliary electrode and the second auxiliary electrode respectively generate a coupling capacitance with the data line, and the magnitude of the coupling capacitance is greater than the magnitude of the coupling capacitance generated by the pixel electrode and the data line. Therefore, the coupling capacitance generated by the first auxiliary electrode and the second auxiliary electrode and the data line, even if the formation position of the pixel electrode is shifted and the coupling capacitance value with the data line changes, the data line and the two The coupling capacitance difference value of the side charged layer structure can still fall within the allowable range, thereby preventing the pixel structure from producing bright and dark lines. On the other hand, the pixel structure provided with the auxiliary electrode can be further matched with the light shielding layer to provide a light shielding effect of the first pixel electrode and the second pixel electrode at the edge thereof, thereby improving the display quality of the pixel structure.

While the invention has been described above in terms of various embodiments, it is not intended to limit the invention, and the invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application attached.

100A‧‧‧ pixel structure

102‧‧‧Substrate

104‧‧‧First scan line

105‧‧‧Second scan line

106‧‧‧First data line

107‧‧‧Second data line

110‧‧‧First active component

112‧‧‧first source

114‧‧‧First bungee

116‧‧‧Second active components

118‧‧‧Second source

120‧‧‧Second bungee

122‧‧‧ Third active component

124‧‧‧ third source

126‧‧‧third bungee

128‧‧‧First auxiliary electrode

129‧‧‧Second auxiliary electrode

130‧‧‧ first pixel electrode

132‧‧‧Second pixel electrode

134‧‧‧ third pixel electrode

B‧‧‧Area

D1‧‧‧ first direction

D2‧‧‧ second direction

Claims (10)

A pixel structure comprising: a data line; a first active component comprising a first drain; a second active component comprising a second drain; a first auxiliary electrode directly opposite the first drain And a second auxiliary electrode directly connected to the second drain, wherein the data line is located between the first auxiliary electrode and the second auxiliary electrode. The pixel structure of claim 1, wherein a horizontal distance between the data line and the first auxiliary electrode is approximately equal to a horizontal distance between the data line and the second auxiliary electrode. The pixel structure of claim 2, further comprising: a first pixel electrode located above the first auxiliary electrode; and a second pixel electrode located above the second auxiliary electrode The first pixel electrode and the second pixel electrode are respectively located on opposite sides of the data line, wherein a minimum horizontal distance between the first auxiliary electrode and the second auxiliary electrode is smaller than the first pixel electrode and a minimum horizontal distance between the second pixel electrodes, wherein a minimum horizontal distance between the first pixel electrode and the data line is different from a minimum horizontal distance between the second pixel electrode and the data line. If the pixel structure described in item 1 of the patent application is applied, The method includes: a first light shielding layer, wherein the first auxiliary electrode is located at least above the first light shielding layer; and a second light shielding layer, wherein the second auxiliary electrode is located at least above the second light shielding layer, and the first light shielding layer The horizontal distance between the layer and the second light shielding layer is smaller than the horizontal distance between the first auxiliary electrode and the second auxiliary electrode. The pixel structure of claim 1, further comprising: a third active component, comprising a third drain, wherein the data line is electrically connected to the second active component and the third active component, And the second drain of the second active component and the third drain of the third active component are respectively located on opposite sides of the data line. The pixel structure of claim 5, wherein the data line extends along a first direction, and the second active component and the third active component are consecutively arranged in the first direction of the data line. Two active components. The pixel structure of claim 1, further comprising: a first insulating layer, wherein the data line, the first auxiliary electrode and the second auxiliary electrode are located on the first insulating layer; a second insulating layer, located in the data line, the first auxiliary electrode, the first Two auxiliary electrodes and the first insulating layer. The pixel structure of claim 1, further comprising: a first pixel electrode located above the first auxiliary electrode; and a second pixel electrode located above the second auxiliary electrode, The first pixel electrode and the second pixel electrode are respectively located on opposite sides of the data line, wherein a horizontal distance between the first auxiliary electrode and the second auxiliary electrode is smaller than the first pixel electrode and the The horizontal distance between the second pixel electrodes. The pixel structure of claim 8, wherein a minimum horizontal distance between the first pixel electrode and the data line is different from a minimum horizontal distance between the second pixel electrode and the data line. The pixel structure of claim 9, wherein the pixel structure is disposed on a substrate, and a vertical projection of the first pixel electrode to the substrate and a vertical projection of the first auxiliary electrode to the substrate At least partially overlapping, and the vertical projection of the second pixel electrode to the substrate at least partially overlaps the vertical projection of the second auxiliary electrode to the substrate.