TW202009318A - 使用自組裝單分子層的選擇性沉積的方法 - Google Patents
使用自組裝單分子層的選擇性沉積的方法 Download PDFInfo
- Publication number
- TW202009318A TW202009318A TW108128544A TW108128544A TW202009318A TW 202009318 A TW202009318 A TW 202009318A TW 108128544 A TW108128544 A TW 108128544A TW 108128544 A TW108128544 A TW 108128544A TW 202009318 A TW202009318 A TW 202009318A
- Authority
- TW
- Taiwan
- Prior art keywords
- metal
- metal surface
- organosilane
- assembled monolayer
- substrate
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 74
- 239000013545 self-assembled monolayer Substances 0.000 title claims abstract description 73
- 230000008021 deposition Effects 0.000 title claims abstract description 29
- 229910052751 metal Inorganic materials 0.000 claims abstract description 132
- 239000002184 metal Substances 0.000 claims abstract description 132
- 239000000758 substrate Substances 0.000 claims abstract description 76
- 239000010410 layer Substances 0.000 claims abstract description 72
- 239000002094 self assembled monolayer Substances 0.000 claims abstract description 64
- 238000000151 deposition Methods 0.000 claims abstract description 49
- 150000001282 organosilanes Chemical class 0.000 claims abstract description 49
- 150000005309 metal halides Chemical class 0.000 claims abstract description 45
- 229910001507 metal halide Inorganic materials 0.000 claims abstract description 44
- 229910001510 metal chloride Inorganic materials 0.000 claims abstract description 32
- 239000000463 material Substances 0.000 claims description 28
- 238000010438 heat treatment Methods 0.000 claims description 5
- 125000000217 alkyl group Chemical group 0.000 claims description 4
- 229910015221 MoCl5 Inorganic materials 0.000 claims description 3
- GICWIDZXWJGTCI-UHFFFAOYSA-I molybdenum pentachloride Chemical compound Cl[Mo](Cl)(Cl)(Cl)Cl GICWIDZXWJGTCI-UHFFFAOYSA-I 0.000 claims description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 2
- STAYJLUKAMQUNR-UHFFFAOYSA-N 1-N,1-N,1-N',1-N',1-N",1-N"-hexamethyl-18-silyloctadecane-1,1,1-triamine Chemical compound CN(C)C(CCCCCCCCCCCCCCCCC[SiH3])(N(C)C)N(C)C STAYJLUKAMQUNR-UHFFFAOYSA-N 0.000 claims 1
- 229910001512 metal fluoride Inorganic materials 0.000 abstract description 22
- 239000007789 gas Substances 0.000 description 25
- 229910044991 metal oxide Inorganic materials 0.000 description 22
- 150000004706 metal oxides Chemical class 0.000 description 22
- 230000008569 process Effects 0.000 description 16
- 238000000231 atomic layer deposition Methods 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 12
- 229910001508 alkali metal halide Inorganic materials 0.000 description 9
- 150000008045 alkali metal halides Chemical class 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- -1 Alloys Chemical class 0.000 description 7
- 239000003989 dielectric material Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910001514 alkali metal chloride Inorganic materials 0.000 description 6
- 230000015654 memory Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- 238000005086 pumping Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 4
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 239000010955 niobium Substances 0.000 description 4
- FGDZQCVHDSGLHJ-UHFFFAOYSA-M rubidium chloride Chemical compound [Cl-].[Rb+] FGDZQCVHDSGLHJ-UHFFFAOYSA-M 0.000 description 4
- PYJJCSYBSYXGQQ-UHFFFAOYSA-N trichloro(octadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl PYJJCSYBSYXGQQ-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 150000004820 halides Chemical class 0.000 description 3
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical class [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910001515 alkali metal fluoride Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- AIYUHDOJVYHVIT-UHFFFAOYSA-M caesium chloride Chemical compound [Cl-].[Cs+] AIYUHDOJVYHVIT-UHFFFAOYSA-M 0.000 description 2
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001103 potassium chloride Substances 0.000 description 2
- 235000011164 potassium chloride Nutrition 0.000 description 2
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 2
- 229940102127 rubidium chloride Drugs 0.000 description 2
- AHLATJUETSFVIM-UHFFFAOYSA-M rubidium fluoride Chemical compound [F-].[Rb+] AHLATJUETSFVIM-UHFFFAOYSA-M 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- YBCAZPLXEGKKFM-UHFFFAOYSA-K ruthenium(iii) chloride Chemical compound [Cl-].[Cl-].[Cl-].[Ru+3] YBCAZPLXEGKKFM-UHFFFAOYSA-K 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- HNSRXJLIYMAWHO-UHFFFAOYSA-N 1-N,1-N,1-N',1-N',1-N",1-N"-hexamethyl-10-silyldecane-1,1,1-triamine Chemical compound CN(C)C(CCCCCCCCC[SiH3])(N(C)C)N(C)C HNSRXJLIYMAWHO-UHFFFAOYSA-N 0.000 description 1
- XUKMKEABWDVGNG-UHFFFAOYSA-N 1-N,1-N,1-N',1-N',1-N",1-N"-hexamethyl-11-silylundecane-1,1,1-triamine Chemical compound CN(C)C(CCCCCCCCCC[SiH3])(N(C)C)N(C)C XUKMKEABWDVGNG-UHFFFAOYSA-N 0.000 description 1
- SOJNWPWWCZAMMJ-UHFFFAOYSA-N 1-N,1-N,1-N',1-N',1-N",1-N"-hexamethyl-4-silylbutane-1,1,1-triamine Chemical compound CN(C)C(CCC[SiH3])(N(C)C)N(C)C SOJNWPWWCZAMMJ-UHFFFAOYSA-N 0.000 description 1
- BQKKBHDKMJCWQG-UHFFFAOYSA-N 1-N,1-N,1-N',1-N',1-N",1-N"-hexamethyl-5-silylpentane-1,1,1-triamine Chemical compound CN(C)C(CCCC[SiH3])(N(C)C)N(C)C BQKKBHDKMJCWQG-UHFFFAOYSA-N 0.000 description 1
- DEKKIFGNJNAXGL-UHFFFAOYSA-N 1-N,1-N,1-N',1-N',1-N",1-N"-hexamethyl-6-silylhexane-1,1,1-triamine Chemical compound CN(C)C(CCCCC[SiH3])(N(C)C)N(C)C DEKKIFGNJNAXGL-UHFFFAOYSA-N 0.000 description 1
- JIQIMZBNPRVQBH-UHFFFAOYSA-N 1-N,1-N,1-N',1-N',1-N",1-N"-hexamethyl-7-silylheptane-1,1,1-triamine Chemical compound CN(C)C(CCCCCC[SiH3])(N(C)C)N(C)C JIQIMZBNPRVQBH-UHFFFAOYSA-N 0.000 description 1
- RQRZYNLTAKWAEN-UHFFFAOYSA-N 1-N,1-N,1-N',1-N',1-N",1-N"-hexamethyl-8-silyloctane-1,1,1-triamine Chemical compound CN(C)C(CCCCCCC[SiH3])(N(C)C)N(C)C RQRZYNLTAKWAEN-UHFFFAOYSA-N 0.000 description 1
- LBOQYUDGZGGZST-UHFFFAOYSA-N 1-N,1-N,1-N',1-N',1-N",1-N"-hexamethyl-9-silylnonane-1,1,1-triamine Chemical compound CN(C)C(CCCCCCCC[SiH3])(N(C)C)N(C)C LBOQYUDGZGGZST-UHFFFAOYSA-N 0.000 description 1
- 229910000967 As alloy Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- QEOLQPGFEDUWTJ-UHFFFAOYSA-N CN(C)C(CC[SiH3])(N(C)C)N(C)C Chemical compound CN(C)C(CC[SiH3])(N(C)C)N(C)C QEOLQPGFEDUWTJ-UHFFFAOYSA-N 0.000 description 1
- XBXALDZGNGCAEU-UHFFFAOYSA-N CN(C)[SiH2]CCCCCCCCCCCC Chemical compound CN(C)[SiH2]CCCCCCCCCCCC XBXALDZGNGCAEU-UHFFFAOYSA-N 0.000 description 1
- GCSSIVWNVUZJMI-UHFFFAOYSA-N CN(C)[Si](CCCCCCCCCCCCC)(N(C)C)N(C)C Chemical compound CN(C)[Si](CCCCCCCCCCCCC)(N(C)C)N(C)C GCSSIVWNVUZJMI-UHFFFAOYSA-N 0.000 description 1
- QDTWUXXCSDOPKU-UHFFFAOYSA-N CN(C)[Si](CCCCCCCCCCCCCCC)(N(C)C)N(C)C Chemical compound CN(C)[Si](CCCCCCCCCCCCCCC)(N(C)C)N(C)C QDTWUXXCSDOPKU-UHFFFAOYSA-N 0.000 description 1
- VGVMMTATKCNSRV-UHFFFAOYSA-N CN(C)[Si](CCCCCCCCCCCCCCCCC)(N(C)C)N(C)C Chemical compound CN(C)[Si](CCCCCCCCCCCCCCCCC)(N(C)C)N(C)C VGVMMTATKCNSRV-UHFFFAOYSA-N 0.000 description 1
- PZXZXPBEWZSCFS-UHFFFAOYSA-N CN(C)[Si](CCCCCCCCCCCCCCCCCCC)(N(C)C)N(C)C Chemical compound CN(C)[Si](CCCCCCCCCCCCCCCCCCC)(N(C)C)N(C)C PZXZXPBEWZSCFS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZETNTFPLEKWPLQ-UHFFFAOYSA-N N-[bis(dimethylamino)-hexadecylsilyl]-N-methylmethanamine Chemical compound CN(C)[Si](CCCCCCCCCCCCCCCC)(N(C)C)N(C)C ZETNTFPLEKWPLQ-UHFFFAOYSA-N 0.000 description 1
- PZVDSEMMSUQGSR-UHFFFAOYSA-N N-[bis(dimethylamino)-octadecylsilyl]-N-methylmethanamine Chemical compound C(CCCCCCCCCCCCCCCCC)[Si](N(C)C)(N(C)C)N(C)C PZVDSEMMSUQGSR-UHFFFAOYSA-N 0.000 description 1
- OKKNBLRDTXEMFS-UHFFFAOYSA-N N-[bis(dimethylamino)-tetradecylsilyl]-N-methylmethanamine Chemical compound CN(C)[Si](CCCCCCCCCCCCCC)(N(C)C)N(C)C OKKNBLRDTXEMFS-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910001513 alkali metal bromide Inorganic materials 0.000 description 1
- 229910001516 alkali metal iodide Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 108010038083 amyloid fibril protein AS-SAM Proteins 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- GZGREZWGCWVAEE-UHFFFAOYSA-N chloro-dimethyl-octadecylsilane Chemical compound CCCCCCCCCCCCCCCCCC[Si](C)(C)Cl GZGREZWGCWVAEE-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- DHCWLIOIJZJFJE-UHFFFAOYSA-L dichlororuthenium Chemical compound Cl[Ru]Cl DHCWLIOIJZJFJE-UHFFFAOYSA-L 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000004673 fluoride salts Chemical class 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000000025 interference lithography Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910001509 metal bromide Inorganic materials 0.000 description 1
- 229910001511 metal iodide Inorganic materials 0.000 description 1
- FHBURLBCXNMPJX-UHFFFAOYSA-N n-[bis(dimethylamino)-ethylsilyl]-n-methylmethanamine Chemical compound CC[Si](N(C)C)(N(C)C)N(C)C FHBURLBCXNMPJX-UHFFFAOYSA-N 0.000 description 1
- AHKKZIUZTWZKDR-UHFFFAOYSA-N n-[bis(dimethylamino)-methylsilyl]-n-methylmethanamine Chemical compound CN(C)[Si](C)(N(C)C)N(C)C AHKKZIUZTWZKDR-UHFFFAOYSA-N 0.000 description 1
- KAHVZNKZQFSBFW-UHFFFAOYSA-N n-methyl-n-trimethylsilylmethanamine Chemical compound CN(C)[Si](C)(C)C KAHVZNKZQFSBFW-UHFFFAOYSA-N 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- SLYCYWCVSGPDFR-UHFFFAOYSA-N octadecyltrimethoxysilane Chemical compound CCCCCCCCCCCCCCCCCC[Si](OC)(OC)OC SLYCYWCVSGPDFR-UHFFFAOYSA-N 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- YHBDIEWMOMLKOO-UHFFFAOYSA-I pentachloroniobium Chemical compound Cl[Nb](Cl)(Cl)(Cl)Cl YHBDIEWMOMLKOO-UHFFFAOYSA-I 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000011698 potassium fluoride Substances 0.000 description 1
- 235000003270 potassium fluoride Nutrition 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- 235000013024 sodium fluoride Nutrition 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- YOUIDGQAIILFBW-UHFFFAOYSA-J tetrachlorotungsten Chemical compound Cl[W](Cl)(Cl)Cl YOUIDGQAIILFBW-UHFFFAOYSA-J 0.000 description 1
- PISDRBMXQBSCIP-UHFFFAOYSA-N trichloro(3,3,4,4,5,5,6,6,7,7,8,8,8-tridecafluorooctyl)silane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)CC[Si](Cl)(Cl)Cl PISDRBMXQBSCIP-UHFFFAOYSA-N 0.000 description 1
- KPGXUAIFQMJJFB-UHFFFAOYSA-H tungsten hexachloride Chemical compound Cl[W](Cl)(Cl)(Cl)(Cl)Cl KPGXUAIFQMJJFB-UHFFFAOYSA-H 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
- C23C16/0236—Pretreatment of the material to be coated by cleaning or etching by etching with a reactive gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
- C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
- C23C16/14—Deposition of only one other metal element
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45534—Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76883—Post-treatment or after-treatment of the conductive material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/32—Processes for applying liquids or other fluent materials using means for protecting parts of a surface not to be coated, e.g. using stencils, resists
- B05D1/322—Removable films used as masks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/60—Deposition of organic layers from vapour phase
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/14—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by electrical means
- B05D3/141—Plasma treatment
- B05D3/145—After-treatment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
揭露一種用於在具有金屬表面和介電質表面的基板頂上選擇性沉積層的方法和設備,包括:(a)使該金屬表面接觸一或多種金屬鹵化物(諸如金屬氯化物或金屬氟化物),而形成暴露的金屬表面;(b)在該介電質表面頂上生長基於有機矽烷的自組裝單層;及(c)在該基板的該暴露的金屬表面頂上選擇性沉積層,其中該基於有機矽烷的自組裝單層抑制該層在該介電質表面頂上的沉積。
Description
本案揭露內容大致上關於用於使用自組裝單層選擇性沉積的方法。
選擇性原子層沉積(ALD)和化學氣相沉積(CVD)製程能夠有利地減少習知微影術中涉及的步驟數目和成本,同時跟上元件尺寸縮小的步調。在後端產線(BEOL)應用中,以金屬介電質圖案選擇性沉積有高度的潛在價值。已出現的一些替代性選擇性基於矽的介電質沉積技術是模板控制式的生長、基於全像(holographic)的微影術、及類似技術。然而,由於在大氣條件下與金屬氧化物形成相關的限制之故,這些替代性技術中無一技術提供完整的解決方案。發明人已觀察到,金屬的本質引起了嚴峻的挑戰,例如在金屬表面上存在著原生氧化物。因為金屬氧化物可作用如介電質,所以薄層的原生氧化物使得金屬表面無法與用於自組裝單層(SAM)的介電質表面區分,而導致選擇性降低或是選擇性損失。
因此,發明人已開發使用自組裝單層作為犧牲層與成核抑制層的選擇性介電質沉積的改良方法和設備。
本文提供用於選擇性沉積的方法和設備。在一些實施例中,一種方法包括:在具有金屬表面和介電質表面的基板頂上沉積層,包括:(a)使該金屬表面接觸一或多種金屬鹵化物,而形成暴露的金屬表面;(b)在該介電質表面頂上生長基於有機矽烷的自組裝單層;及(c)在該基板之該暴露的金屬表面頂上選擇性沉積一層,其中該基於有機矽烷的自組裝單層抑制該層在該介電質表面頂上的沉積。在多個實施例中,該金屬鹵化物是金屬氯化物、金屬氟化物、鹼金屬氯化物、或上述鹵化物之組合。
在另一實施例中,提供一種調節具有金屬表面和介電質表面的基板的方法,包括使該金屬表面接觸一種或多種金屬鹵化物,而形成暴露的金屬表面,其中該暴露的金屬表面抑制該表面上的基於有機矽烷的自組裝單層的沉積。在多個實施例中,該金屬鹵化物是金屬氯化物、金屬氟化物、鹼金屬氯化物、或上述鹵化物之組合。
在一些實施例中,一種方法包括:在具有金屬表面和介電質表面的基板頂上選擇性沉積層,包括:(a)使該金屬表面接觸一種或多種金屬氯化物、金屬氟化物、或上述材料之組合,而形成暴露的金屬表面;(b)在該介電質表面頂上生長基於有機矽烷的自組裝單層;及(c)在該基板的該暴露的金屬表面頂上選擇性沉積一層,其中該基於有機矽烷的自組裝單層抑制該層在該介電質表面頂上的沉積。
在一些實施例中,本案揭露內容關於一種電腦可讀媒體,在該電腦可讀媒體上儲存有多個指令,當執行該等指令時,該等指令引發處理腔室執行在具有金屬表面和介電質表面的基板頂上選擇性沉積層的方法,該方法包括:(a)使該金屬表面接觸一種或多種金屬鹵化物,而形成暴露的金屬表面;(b)在該介電質表面頂上生長基於有機矽烷的自組裝單層;及(c)在該基板的該暴露的金屬表面頂上選擇性沉積一層,其中該基於有機矽烷的自組裝單層抑制該層在該介電質表面頂上的沉積。
以下描述本案揭露內容的其他及進一步的實施例。
本文提供使用自組裝單層(SAM)進行選擇性沉積的方法。在一些實施例中,本文所述的方法藉由使金屬表面接觸一或多種金屬鹵化物(例如金屬氯化物、金屬氟化物、及類似物),而形成暴露的金屬表面,以有利地調節具有金屬表面和介電質表面的基板,其中該暴露的金屬表面抑制在該表面上的基於有機矽烷自組裝單層的沉積。暴露的金屬表面有利地不包括有問題的氧化物層,該有問題的氧化物層可能會促進基於有機矽烷的自組裝單層在該氧化物層上的沉積並且限制或破壞該製程的選擇性。
圖2是根據本案揭露內容的一些實施例的處理具有金屬表面和介電質表面的基板的方法200的流程圖。圖3A至圖3E是根據本案揭露內容的一些實施例的在圖2之處理序列的不同階段期間的基板的說明性剖面視圖。本案揭露內容的方法可以在組裝成用於原子層沉積(ALD)或化學氣相沉積(CVD)的處理腔室中執行,例如下面與圖1相關地討論的處理腔室。
方法200在基板300上執行,如圖3A所描繪,該基板300具有金屬表面302及介電質表面304。在多個實施例中,基板300可包括諸如下述材料:結晶矽(例如,Si >100>或Si >111>)、矽鍺、摻雜或未摻雜的多晶矽、摻雜或未摻雜的矽晶圓、圖案化或非圖案化的晶圓、絕緣體上覆矽(SOI)、碳摻雜的氧化矽、氮化矽、摻雜矽、鍺、砷化鎵、玻璃、藍寶石、及上述材料之組合。在實施例中,基板300可具有各種尺寸,對於圓形基板而言,諸如200mm、300mm、450mm、或其他直徑。基板300也可以是任何多邊形、正方形、矩形、彎曲或其他非圓形工件,諸如用在製造平板顯示器中的多邊形玻璃基板。除非另有註記,否則本文所述的實施方式和範例在諸如基板300的基板上進行,該基板具有200mm直徑、300mm直徑、或450mm直徑的基板。
在多個實施例中,介電質表面304與金屬表面302並不相同。在一些實施例中,介電質表面304藉由任何適合的原子層沉積製程或化學層沉積製程沉積。在一些實施例中,介電質表面304可包括沉積在基板300頂上的低k介電質層。在一些實施例中,介電質表面304可包括適合用於半導體元件製造的任何低k介電質材料。適合作為低k介電質材料的非限制性材料可包括含矽材料,例如氧化矽(SiO2
)、氮化矽、或氮氧化矽(SiON)。在多個實施例中,低k介電質材料可具有小於約3.9的低k值(例如,約2.5至約3.5)。在一些實施例中,介電質表面304可包括氧化鉿,例如HfOx
。
在一些實施例中,藉由任何適合的原子層沉積製程或化學層沉積製程沉積金屬表面302。在一些實施例中,該金屬表面302可包括適合用於半導體元件製造的任何金屬。適用於金屬表面302的非限制性金屬包括:銅(Cu)、鈷(Co)、鎢(W)、鈮(Nb)、釕(Ru)、或鉬(Mo),以及上述金屬的組合,諸如合金,及類似物。參照圖3A,顯示金屬氧化物層305配置在金屬表面302頂上。金屬氧化物層305可以是原生氧化物層或形式,這是由於金屬表面302接觸例如在空氣或水中的氧而造成。金屬氧化物層305是有問題的,原因在於,金屬氧化物層305作用如介電層或是會促進基於有機矽烷的自組裝單層的沉積在該金屬氧化物層上。在金屬氧化物層305和金屬表面302頂上形成基於有機矽烷的自組裝單層可以抑制或減少選擇性沉積方法的選擇性。在多個實施例中,在沉積自組裝單層306之前移除金屬氧化物層305。
根據本案揭露內容,方法200開始於210,並且如圖3A和3B所描繪,該方法的開始是藉由下述方式進行:使金屬表面接觸一或多種金屬鹵化物(諸如金屬氯化物或金屬氟化物及類似物),而形成暴露的金屬表面308。藉由選擇一或多種金屬鹵化物(諸如金屬氯化物或金屬氟化物),暴露的金屬表面308形成為無金屬氧化物層305或實質上無金屬氧化物層305,並且暴露的金屬表面308無法使自組裝單層(SAM)與該表面結合。暴露的金屬表面之材料的非限制性範例包括:實質上純的(例如,實質上無氧化物的)銅(Cu)、鈷(Co)、鎢(W)、鈮(Nb)、釕(Ru)或鉬(Mo)及上述材料之組合(諸如合金)及類似物。
在多個實施例中,該一或多種金屬鹵化物(諸如金屬氯化物或金屬氟化物)以足以移除金屬氧化物層305的量接觸金屬表面302。例如,該一或多種金屬鹵化物(諸如金屬氯化物或金屬氟化物)可以在金屬表面302頂上蝕刻金屬氧化物層305,而形成暴露的金屬表面308,如圖3B所示。在多個實施例中,使用足以移除金屬氧化物層305的一或多種金屬鹵化物(例如金屬氯化物或金屬氟化物)的量在適合反應的條件下使金屬表面302接觸一或多種金屬鹵化物(諸如金屬氯化物或金屬氟化物)。在多個實施例中,使金屬表面302接觸一或多種金屬鹵化物(諸如金屬氯化物或金屬氟化物)是在如下所述之第一溫度執行:約攝氏300度至約攝氏400度、或約攝氏325度至約攝氏375度、或約攝氏325度、約攝氏350度、或約攝氏375度。在多個實施例中,使金屬表面302接觸一或多種金屬鹵化物(諸如金屬氯化物或金屬氟化物)是在下述量的壓力下執行:1至15托、約1至約15托、約5托、約10托、或約15托。在多個實施例中,使金屬表面302接觸一或多種金屬鹵化物(諸如金屬氯化物或金屬氟化物)是以下述時間執行:約5至約20分鐘,諸如約10分鐘至約15分鐘。在多個實施例中,使金屬表面與一或多種金屬鹵化物(諸如金屬氯化物或金屬氟化物)接觸執行達5至20分鐘。
在一些實施例中,一或多種鹼金屬鹵化物以足以移除金屬氧化物層305的量接觸金屬表面302。例如,該一或多種鹼金屬鹵化物可蝕刻金屬表面302頂上的金屬氧化物層305,而形成暴露的金屬表面308,如圖3B所示。在多個實施例中,使用足以移除金屬氧化物層305的一或多種鹼金屬鹵化物的量在適合反應的條件下執行金屬表面302與一或多種鹼金屬鹵化物的接觸。在多個實施例中,使金屬表面302接觸一或多種鹼金屬鹵化物是在如下所述之第一溫度執行:約攝氏300度至約攝氏400度、或約攝氏325度至約攝氏375度、或約攝氏325度、約攝氏350度、或約攝氏375度。在多個實施例中,使金屬表面302接觸一或多種鹼金屬鹵化物是在下述量的壓力下執行:1至15托、約1至約15托、約5托、約10托、或約15托。在多個實施例中,使金屬表面302接觸一或多種鹼金屬鹵化物執行達下述時間:約5至約20分鐘、諸如約10分鐘至約15分鐘。在多個實施例中,使金屬表面接觸一或多種鹼金屬鹵化物達5至20分鐘。鹼金屬鹵化物的非限制性範例包括:鹼金屬氟化物、鹼金屬氯化物、鹼金屬溴化物、鹼金屬碘化物、鹵化鋰、鹵化鈉、鹵化鉀、鹵化銣、鹵化銫、以及上述材料之組合。鹼金屬氟化物的範例包括氟化鋰、氟化鈉、氟化鉀、氟化銣、氟化銫及上述材料之組合。鹼金屬氯化物的範例包括:氯化鋰、氯化鈉、氯化鉀、氯化銣、氯化銫及上述材料之組合。鹼金屬氯化物的範例包括:氯化鋰、氯化鈉、氯化鉀、氯化銣、氯化銫及上述材料之組合。
在多個實施例中,一或多種金屬鹵化物是以足以移除金屬氧化物層305的量接觸金屬表面302。例如,一或多種金屬鹵化物可蝕刻金屬表面302頂上的金屬氧化物層305,而形成暴露的金屬表面308,如圖3B所示。在多個實施例中,使用足以移除金屬氧化物層305的一或多種金屬鹵化物的量在適合反應的條件下執行金屬表面302與一或多種金屬鹵化物的接觸。在多個實施例中,使金屬表面302接觸一或多種金屬鹵化物是在如下所述之第一溫度執行:約攝氏300度至約攝氏400度、或約攝氏325度至約攝氏375度、或約攝氏325度、約攝氏350度、或約攝氏375度。在多個實施例中,使金屬表面302接觸一或多種金屬鹵化物是在下述量的壓力下執行:1至15托、約1至約15托、約5托、約10托、或約15托。在多個實施例中,使金屬表面302接觸一或多種金屬鹵化物執行達下述時間:約5至約20分鐘,諸如約10分鐘至約15分鐘。在多個實施例中,使金屬表面接觸一種或多種金屬鹵化物執行達5至20分鐘。金屬鹵化物的範例包括:金屬氟化物、金屬氯化物、金屬溴化物、金屬碘化物及上述材料的組合。根據本發明使用的適合的一或多種金屬氯化物的非限制性範例包括WClx
、NbClx
、RuClx
、MoClx
及上述材料之組合,其中x是整數或數字。
在多個實施例中,使金屬表面302接觸一或多種金屬鹵化物(諸如金屬氯化物或金屬氟化物)是在真空下執行,而使得氧無法抑制該反應或無法促進金屬表面302頂上額外的金屬氧化物材料生長。在多個實施例中,使金屬表面302接觸一或多種金屬鹵化物(例如金屬氯化物或金屬氟化物)是在諸如圖1之處理腔室的腔室中進行。圖1的處理腔室可以是無氧的。
適合根據本案揭露內容使用的金屬氯化物包括適合充分移除金屬表面302頂上的金屬氧化物層305以形成暴露的金屬表面308的任何金屬氯化物。根據本案揭露內容使用的適合的一或多種鹼金屬氯化物的非限制性範例包括WClx
、NbClx
、RuClx
、MoClx
或前述材料之組合,其中x是整數或數字。在多個實施例中,氯化鎢(WClx
)(其中x是整數,例如大於1)是以氣態形式提供。在多個實施例中,WClx
是適合的反應物(其中x是整數,例如2、4、5、6、……)。在一個實施例中,WClx
是WCl6
(六氯化鎢),其中x是整數6。在一些實施例中,前驅物氣體包括WCl5
或WCl6
。在多個實施例中,RuClx
適用於本文,其中X是2或3的整數,該RuClx
例如為氯化釕(III)或氯化釕(RuCl2
)。在多個實施例中,諸如NbClx
(x = 5、4)的氯化鈮適用於本文。在多個實施例中,適用於本文的金屬氯化物可以以氣態形式提供,例如適於在腔室(例如圖1的處理腔室)中輸送到基板的前驅物氣體。在多個實施例中,圖1的處理腔室是無氧腔室。
金屬氯化物與金屬表面302反應的反應式的一個範例如下所示:
MOx
+ WClx
↑加熱
→WCly
↑+ MClz
↑+ O2
↑
在上述反應中,氣相WCl蝕刻掉原生氧化物且在表面上留下純金屬,而形成暴露的金屬表面。
金屬氯化物與金屬表面302反應的反應式的另一個範例如下所示:
MOx
+ WClx
↑+ H2
↑加熱
→W↓+ MClx
↑+ H2
O↑
上述反應中,將氫氣與WClx
一起加入。結果,移除了天然氧化物。其他反應可適用於根據本發明的用途,包括在暴露的金屬表面區域上沉積額外的諸如鎢(W)之金屬之層的反應。
方法200在220繼續,並且如圖3C所描繪,在介電質表面304頂上生長或沉積自組裝單層306,例如基於有機矽烷的自組裝單層。在多個實施例中,可挑選自組裝單層306以在大於約攝氏50度(例如約攝氏100度至約攝氏500度)的第一溫度下呈熱穩定。藉由選擇在第一溫度下熱穩定的自組裝單層306,可在低於攝氏300度(諸如約攝氏100度至約攝氏200度)的溫度藉由化學氣相沉積(CVD)或原子層沉積(ALD)製程執行自組裝單層306的沉積,並且不會分解該自組裝單層306。
在多個實施例中,在介電質表面304頂上生長或沉積自組裝單層306(諸如基於有機矽烷的自組裝單層)包括:使介電質表面304接觸有機矽烷。在多個實施例中,有機矽烷是氣態形式,並且在真空下於腔室中輸送。適合的有機矽烷具有長的烷基鏈,以形成緊密、無缺陷、熱穩定、且化學惰性的阻障物,該阻障物能在稍後階段乾淨地移除。適合的有機矽烷可包含C-8至C-30烷基鏈,包括具有C-8至多達C-30烷基鏈的所有相應的同系物(homologue)。示範性的適合的有機矽烷包括(但不限於)十八烷基三氯矽烷(ODTS)、三甲氧基(十八烷基)矽烷(ODTMS)、氯(二甲基)十八烷基矽烷(CDODS)、或三氯(1H,1H,2H,2H-全氟辛基)矽烷(PFTS)。選擇有機矽烷分子的上述標準的其中一項可以是自組裝單層的熱穩定性。在多個實施例中,選擇在後續沉積的層310的沉積溫度下熱穩定的自組裝單層避免了在隨後沉積的層的沉積溫度下自組裝單層306分解。例如,ODTS在二氧化矽(SiO2
)上的熱穩定性至少多達攝氏500度。因此,在透過ALD製程沉積層310期間ODTS自組裝單層不會分解。因此,SAM的熱穩定性擴展了溫度相容性的極限。在多個實施例中,生長基於有機矽烷的自組裝單層是下述量的壓力下執行:10至250托、100至350托、或250至350托。
在一些實施例中,適合的有機胺基矽烷的非限制性範例可包括甲矽烷胺(silylamine)材料,包括美國專利申請號第15 / 446,816中描述的那些材料,該專利申請案之名稱為「具有間歇性空氣-水暴露的自組裝單層阻障」,由Kaufman-Osborn等人所發明。
在一些實施例中,適合用作本文SAM前驅物的甲矽烷基胺材料的非限制性範例包括:三(二甲胺基)甲基矽烷、三(二甲胺基)乙基矽烷、三(二甲胺基)丙基矽烷、三(二甲胺基)丁基矽烷、三(二甲胺基)戊基矽烷、三(二甲胺基)己基矽烷、三(二甲胺基)庚基矽烷、三(二甲胺基)辛基矽烷、三(二甲胺基)壬基矽烷、三(二甲胺基)癸基矽烷、三(二甲胺基)十一烷基矽烷、三(二甲胺基)十二烷基矽烷、三(二甲胺基)十三烷基矽烷、三(二甲胺基)十四烷基矽烷、三(二甲胺基)十五烷基矽烷、三(二甲胺基)十六烷基矽烷、三(二甲胺基)十七烷基矽烷、三(二甲胺基)十八烷基矽烷、三(二甲胺基)十九烷基矽烷、及上述材料之組合。
在一些實施例中,用於本文的SAM分子的非限制性範例包括:二甲胺基三甲基矽烷,以及具有以下化學式的化學品:
或是
在一些實施例中,基於有機矽烷的自組裝單層以氣體前驅物形式提供,並且可包括例如一有機矽烷濃度,該濃度足以在介電質表面304上形成單層,足以阻止層310沉積在介電質表面上。在多個實施例中,具有暴露的金屬表面308和介電質表面304的基板300接觸包含有機矽烷的氣態前驅物材料達約2至約3小時,而在介電質表面304頂上形成自組裝單層306。有機矽烷分子具有對介電質表面304的化學親合力(例如,有反應性及選擇性)。因此,自組裝單層306將僅會在介電質表面304上形成而不會在暴露的金屬表面308上形成。在多個實施例中,在沉積自組裝單層306之後,基板300停留或維持在真空下,以移除任何未吸收的有機矽烷分子。
接著,在230,且如圖3D中所描繪,顯示在基板300之暴露的金屬表面308頂上選擇性地沉積層310,其中自組裝單層306(諸如基於有機矽烷的自組裝單層)抑制介電質表面304頂上的層310的沉積。圖3D顯示了層310選擇性地沉積在基板300的暴露的金屬表面308頂上。在一些實施例中,透過任何適合的原子層沉積製程或化學層沉積進行層的沉積。介電質表面304頂上自組裝單層306的存在抑制了在介電質表面304上層310的形成。在多個實施例中,自組裝單層306的熱穩定性防止自組裝單層306在層310之沉積溫度(例如,低於約攝氏300度)下的分解。層310可包括適合用於半導體元件製造的任何材料。例如,在一些實施例中,材料可以是第二低k材料或者是含矽材料,例如,諸如氧化矽(SiO2
)。
接著,且如圖3E所描繪,處理基板300,以從介電質表面304頂上移除自組裝單層306。例如,基板300可以與遠端電漿接觸,而從介電質表面304頂上移除自組裝單層306。在一些實施例中,其他移除製程可包括使基板與水蒸氣電漿接觸,以從介電質表面304頂上移除自組裝單層306。在一些實施例中,可將基板300加熱到大於約攝氏500度(例如約攝氏500度至約攝氏1000度)的溫度,以從介電質表面304頂上移除自組裝單層306。實施例可包括,將基板加熱至高於攝氏500度的溫度。在移除自組裝單層306之後,方法200結束,且可根據需求使基板歷經進一步的處理,以完成半導體元件,諸如場效電晶體(FET)、鰭式場效電晶體(FinFET)、快閃記憶體元件、3D FINFET元件、或類似物。
圖4描繪了根據本案揭露內容的一些實施例的調節具有金屬表面和介電質表面的基板的方法的流程圖。在多個實施例中,提供一種調節具有金屬表面和介電質表面的基板的方法。在多個實施例中,該方法可包括使金屬表面接觸一或多種金屬鹵化物(諸如金屬氯化物或金屬氟化物),而形成暴露的金屬表面,其中該暴露的金屬表面抑制該表面上基於有機矽烷的自組裝單層的沉積。在一些實施例中,使金屬表面接觸一或多種一或多種金屬鹵化物(諸如金屬氯化物或金屬氟化物)是在約攝氏300度至約攝氏400度的第一溫度下、於1至15托的壓力下進行達5至20分鐘的持續時間。在多個實施例中,金屬氯化物是包含WClx
、NbClx
、RuClx
、MoClx
或上述材料之組合的氣體,其中x是整數或數字。在其他實施例中,使金屬表面接觸一或多種金屬氯化物、金屬氟化物、或上述材料之組合是在上述任何條件下執行。在多個實施例中,該一或多種金屬鹵化物是包含WClx
、NbClx
、RuClx
、MoClx
或上述材料之組合的金屬氯化物氣體,其中x是整數或數字。
圖1描繪了可用於實行如本文所討論的本案揭露內容之實施例的那種類型的說明性設備的示意圖。設備100可包括控制器150和處理腔室102,該處理腔室102具有排氣系統120,用於從處理腔室102的內部空間105移除多餘的處理氣體、處理副產物、或類似物。示範性處理腔室可包括許多種處理腔室之任一者,該等處理腔室組裝成用於原子層沉積(ALD)或化學氣相沉積(CVD),該等處理腔室可自美國加州Santa Clara的應用材料公司購得。可類似地使用來自其他製造商的其他適合的處理腔室。
處理腔室102具有內部空間105,該內部空間105可包括處理空間104。該處理空間104可以界定於例如基板支撐件108與一或多個氣體入口之間,該基板支撐件108配置在處理腔室102內以用於在處理期間將基板110支撐在該基板支撐件108上,該等氣體入口諸如設置在預定位置處的噴頭114及/或噴嘴。在一些實施例中,基板支撐件108可包括將基板110保持或支撐在基板支撐件108之表面上的機構,諸如靜電吸盤、真空吸盤、基板保持夾具、或類似物(圖中未示)。在一些實施例中,基板支撐件108可包括用於控制基板溫度的機構(諸如加熱及/或冷卻之裝置,圖中未示)及/或用於控制基板表面附近的物種之通量及/或離子能量的機構。
例如,在一些實施例中,基板支撐件108可包括RF偏壓電極140。該RF偏壓電極140可透過一個或多個各別的匹配網路(圖中顯示匹配網路136)耦接一個或多個偏壓電源(圖中顯示一個偏壓電源138)。該一或多個偏壓電源能夠以約2MHz至約60MHz的頻率產生多達1200W或RF能量,該頻率諸如為約2MHz、或約13.56MHz、或約60Mhz。在一些實施例中,可以設置兩個偏壓電源,以用於透過各別的匹配網路將RF功率以約2MHz和約13.56MHz的各別的頻率耦合到RF偏壓電極140。至少一個偏壓電源可以提供連續或脈衝功率。在一些實施例中,偏壓電源可替代地可以是DC或脈衝DC源。
基板110可經由處理腔室102的壁中的開口112進入處理腔室102。可經由狹縫閥118(或其他選擇性提供穿過開口112進出腔室內部的機構)選擇性地密封開口112。基板支撐件108可耦接升舉機構134,該升舉機構134可控制基板支撐件108在下方位置(如圖所示)與可選的上方位置之間的位置,該下方位置適合經由開口112將基板傳送到腔室中和從腔室中傳送出,該上方位置適合用於處理。可以選擇處理位置以最大化特定製程的處理均勻性。當處於升高的處理位置中的至少一個時,基板支撐件108可配置在開口112上方,以提供對稱的處理區域。
一或多個氣體入口(例如,噴頭114)可以耦接氣體供應源116,以用於透過質量流量控制器117將一或多種處理氣體提供到處理腔室102的處理空間104中。此外。可以設置一或多個閥119以控制一或多種處理氣體的流量。該質量流量控制器117和一或多個閥119可個別使用,或相互結合以提供恆定流速、預定流速的處理氣體或是脈衝的處理氣體(如上文所述)。
儘管圖1中顯示噴頭114,但可設置額外的或替代性的氣體入口,諸如配置在處理腔室102的頂板中或在處理腔室102之側壁上、或處於適合提供氣體至處理腔室102之其他位置處的噴嘴或入口,該其他位置諸如處理腔室之底座、基板支撐件之周邊、或類似位置。
設備100可利用電容耦合的RF能量以進行電漿處理。舉例而言,處理腔室102可具有由介電材料製成的頂板142和至少部分導電的噴頭114,以提供RF電極(或者可以提供分別的RF電極)。噴頭114(或其他RF電極)可透過一或多個各別的匹配網路(圖中顯示匹配網路146)耦接一或多個RF電源(示出一個RF電源148)。一或多個電漿源能夠在約2MHz及/或約13.56MHz的頻率或高頻率(諸如27MHz及/或60MHz)產生多達約3,000W(或在一些實施例中,多達約5,000W)的RF能量。排氣系統120通常包括泵送氣室124和一或多個導管,該等導管將泵送氣室124耦接處理腔室102的內部空間105(並且通常是處理空間104)。
真空泵128可經由泵送通口126耦接泵送氣室124,該泵送通口126用於經由一或多個排氣通口(圖中顯示兩個排氣通口122)從處理腔室泵送出廢氣。真空泵128可流體耦接排氣出口132,用於將廢氣引導到適當的排氣處理設備。閥130(例如閘閥,或類似物)可配置在泵送氣室124中,以結合真空泵128的操作而助於控制廢氣的流速。儘管圖中顯示z-運動閘閥,但可利用任何適合的、製程相容的閥以控制廢氣流量。
為了助於如上所述控制處理腔室102,控制器150可以是任何形式的通用電腦處理器,該處理器能夠在工業設施中使用,以控制各種腔室和子處理器。CPU 152的記憶體(或電腦可讀媒體)156可以是易於取得的記憶體中的一或多種,諸如隨機存取記憶體(RAM)、唯讀記憶體(ROM)、軟碟、硬碟或任何其他形式的本地端或遠端數位儲存裝置。支援電路154耦接CPU 152,以用習知方式支援處理器。這些電路包括高速緩衝儲存器、電源供應器、時脈電路、輸入/輸出電路及子系統、與類似物。
本文揭露之方法大致上可儲存在記憶體156中作為軟體常式158,當由CPU 152執行時,該軟體常式158引發處理腔室102執行本案揭露內容的製程。軟體常式158也可以由第二CPU(圖中未示)儲存及/或執行,該第二CPU位在CPU 152所控制的硬體的遠端。本案揭露內容的一些或全部方法也可以在硬體中執行。就此而言,本案揭露內容可在軟體中施行且在硬體中使用電腦系統執行,作為例如專用積體電路或其他類型的硬體實施方式,或者作為軟體和硬體的組合。可以在將基板110定位在基板支撐件108上之後執行軟體常式158。當由CPU 152執行該軟體常式158時,該軟體常式158將該通用電腦轉換成專用電腦(控制器150),該專用電腦控制腔室操作,使得本文揭露之方法得以執行。
在一些實施例中,本案揭露內容關於一種處理腔室,該處理腔室組裝成用於執行在具有金屬表面和介電質表面的基板頂上選擇性沉積層的方法,該方法包括:(a)使該金屬表面接觸一種或多種金屬鹵化物,而形成暴露的金屬表面;(b)在該介電質表面頂上生長基於有機矽烷的自組裝單層;及(c)在該基板的該暴露的金屬表面頂上選擇性沉積一層,其中該基於有機矽烷的自組裝單層抑制該層在該介電質表面頂上的沉積。
在一些實施例中,本案揭露內容關於一種電腦可讀媒體,在該電腦可讀媒體上儲存有多個指令,當執行該等指令時,該等指令引發處理腔室執行在具有金屬表面和介電質表面的基板頂上選擇性沉積層的方法,該方法包括:(a)使該金屬表面接觸一種或多種金屬鹵化物,而形成暴露的金屬表面;(b)在該介電質表面頂上生長基於有機矽烷的自組裝單層;及(c)在該基板的該暴露的金屬表面頂上選擇性沉積一層,其中該基於有機矽烷的自組裝單層抑制該層在該介電質表面頂上的沉積。
在一些實施例中,本案揭露內容關於一種電腦可讀媒體,在該電腦可讀媒體上儲存有多個指令,當執行該等指令時,該等指令引發一種調節具有金屬表面和介電質表面的基板的方法,該方法包括:使該金屬表面接觸一或多種金屬鹵化物,而形成暴露的金屬表面,其中該暴露的金屬表面抑制該表面上基於有機矽烷的自組裝單層的沉積。
在一些實施例中,本案揭露內容關於一種電腦可讀媒體,在該電腦可讀媒體上儲存有多個指令,當執行該等指令時,該等指令引發一種在具有金屬表面和介電質表面的基板頂上選擇性沉積層的方法,該方法包括:(a)使該金屬表面接觸一種或多種金屬氯化物、金屬氟化物、或上述材料之組合,而形成暴露的金屬表面;(b)在該介電質表面頂上生長基於有機矽烷的自組裝單層;及(c)在該基板的該暴露的金屬表面頂上選擇性沉積一層,其中該基於有機矽烷的自組裝單層抑制該層在該介電質表面頂上的沉積。
可以使用其他半導體基板處理系統實行本案揭露內容,其中發明所屬技術領域中具有通常知識者可藉由利用本文揭露的教示在不脫離本案揭露內容之精神的情況下調整處理參數以達成可接受的特性。
雖然前述內容是針對本案揭露內容的多個實施例,但是可在不脫離本案揭露內容的基本範疇的情況下設計本案揭露內容的其他和進一步的實施例。
100‧‧‧設備
102‧‧‧處理腔室
104‧‧‧處理空間
105‧‧‧內部空間
108‧‧‧基板支撐件
110‧‧‧基板
112‧‧‧開口
114‧‧‧噴頭
116‧‧‧氣體供應源
117‧‧‧質量流量控制器
118‧‧‧狹縫閥
119‧‧‧閥
120‧‧‧排氣系統
122‧‧‧排氣通口
124‧‧‧泵送氣室
126‧‧‧泵送通口
128‧‧‧真空泵
130‧‧‧閥
132‧‧‧排氣出口
134‧‧‧升舉機構
136‧‧‧匹配網路
138‧‧‧偏壓電源
140‧‧‧RF偏壓電極
142‧‧‧頂板
146‧‧‧匹配網路
148‧‧‧RF電源
150‧‧‧控制器
152‧‧‧CPU
154‧‧‧支援電路
156‧‧‧記憶體
158‧‧‧軟體常式
200‧‧‧方法
210-230‧‧‧步驟
300‧‧‧基板
302‧‧‧金屬表面
304‧‧‧介電質表面
305‧‧‧金屬氧化物層
306‧‧‧自組裝單層
308‧‧‧暴露的金屬表面
310‧‧‧層
400‧‧‧方法
透過參考所附圖式中描繪的本案揭露內容的說明性實施例,可以理解上文簡要概述且在下文更詳細討論的本案揭露內容的實施例。然而,所附圖式僅說明本案揭露內容的典型實施例,因此不應視為對範疇的限制,因為本案揭露內容可容許其他同等有效的實施例。
圖1是根據本案揭露內容的一些實施例的適合執行化學氣相沉積製程或原子層沉積製程的處理腔室。
圖2是根據本案揭露內容的一些實施例的選擇性沉積之方法的流程圖。
圖3A至圖3E是根據本案揭露內容的一些實施例的圖2之處理序列的不同階段期間的基板的說明性剖面視圖。
圖4是根據本案揭露內容的一些實施例的調節具有金屬表面和介電質表面的基板的方法的流程圖。
為了助於瞭解,在可能的情況下,使用相同的元件符號來表示圖式中共用的相同元件。該等圖式並未按照比例繪製,並且可能為了清楚起見而簡化。一個實施例的元件和特徵可有利地併入其他實施例而無需贅述。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記)
無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記)
無
200‧‧‧方法
210-230‧‧‧步驟
Claims (20)
- 一種在具有一金屬表面和一介電質表面的一基板頂上選擇性沉積一層的方法,包括: (a)使該金屬表面接觸一或多種金屬鹵化物,而形成一暴露的金屬表面;(b)在該介電質表面頂上生長一基於有機矽烷的自組裝單層;及(c)在該基板的該暴露的金屬表面頂上選擇性沉積一層,其中該基於有機矽烷的自組裝單層抑制該層在該介電質表面頂上的沉積。
- 如請求項1所述之方法,其中使該金屬表面接觸一或多種金屬鹵化物是在一第一溫度執行,該第一溫度為約攝氏300度至約攝氏400度。
- 如請求項1或2所述之方法,其中使該金屬表面接觸一或多種金屬鹵化物是在一壓力執行,該壓力的量為1托至15托。
- 如請求項1或2所述之方法,其中該使該金屬表面接觸一或多種金屬鹵化物執行達5至20分鐘。
- 如請求項1或2所述之方法,其中該一或多種金屬鹵化物是一氣體。
- 如請求項1或2所述之方法,其中該一或多種金屬鹵化物是一金屬氯化物,該金屬氯化物包括WClx 、NbClx 、RuClx 、MoClx 、或上述材料之組合,其中x是整數。
- 如請求項1或2所述之方法,其中該使該金屬表面接觸一或多種金屬鹵化物是在一無氧腔室中執行。
- 如請求項1或2所述之方法,其中該使該金屬表面接觸一或多種金屬鹵化物在該金屬表面頂上形成一暴露的金屬表面。
- 如請求項1或2所述之方法,其中生長該基於有機矽烷的自組裝單層包括:將該基板暴露至一氣體,該氣體包括一有機矽烷。
- 如請求項1或2所述之方法,其中該基於有機矽烷的自組裝單層包括一C-8至C-30的烷基鏈。
- 如請求項1或2所述之方法,其中生長該基於有機矽烷的自組裝單層是在一第一溫度執行,該第一溫度為約攝氏100度至約攝氏200度。
- 如請求項1或2所述之方法,其中生長該基於有機矽烷的自組裝單層是在一壓力執行,該壓力的量為10托至350托。
- 如請求項1或2所述之方法,其中生長該基於有機矽烷的自組裝單層執行達約2小時至3小時之持續時間。
- 如請求項1或2所述之方法,其中生長該基於有機矽烷的自組裝單層是在一無氧腔室中執行。
- 如請求項1或2所述之方法,其中該基於有機矽烷的自組裝單層包括三(二甲胺基)十八烷基矽烷。
- 如請求項1或2所述之方法,進一步包括:將該基板加熱到約攝氏500度至約攝氏1000度的溫度,以移除該基於有機矽烷的自組裝單層。
- 一種調節具有金屬表面和介電質表面的基板的方法,包括: (a)使該金屬表面接觸一或多種金屬鹵化物,而形成一暴露的金屬表面,其中該暴露的金屬表面抑制該表面上的一基於有機矽烷的自組裝單層的沉積。
- 如請求項17所述之方法,其中使該金屬表面接觸一或多種金屬鹵化物是在約攝氏300度至約攝氏400度的第一溫度、於1至15托之壓力執行達5至20分鐘的持續時間。
- 如請求項17或18所述之方法,其中該一或多種金屬鹵化物是一金屬氯化物氣體,該金屬氯化物氣體包括WClx 、NbClx 、RuClx 、MoClx 、或上述材料之組合,其中x是整數或數字。
- 一種電腦可讀媒體,在該電腦可讀媒體上儲存有多個指令,當執行該等指令時,該等指令引發一處理腔室執行在具有一金屬表面和一介電質表面的一基板頂上選擇性沉積一層的方法,該方法包括:(a)使該金屬表面接觸一種或多種金屬鹵化物,而形成一暴露的金屬表面;(b)在該介電質表面頂上生長一基於有機矽烷的自組裝單層;及(c)在該基板的該暴露的金屬表面頂上選擇性沉積一層,其中該基於有機矽烷的自組裝單層抑制該層在該介電質表面頂上的沉積。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862717452P | 2018-08-10 | 2018-08-10 | |
US62/717,452 | 2018-08-10 | ||
US16/535,499 | 2019-08-08 | ||
US16/535,499 US12024770B2 (en) | 2018-08-10 | 2019-08-08 | Methods for selective deposition using self-assembled monolayers |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202009318A true TW202009318A (zh) | 2020-03-01 |
TWI727389B TWI727389B (zh) | 2021-05-11 |
Family
ID=69405587
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW108128544A TWI727389B (zh) | 2018-08-10 | 2019-08-12 | 使用自組裝單層的選擇性沉積的方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US12024770B2 (zh) |
JP (1) | JP7189321B2 (zh) |
KR (1) | KR102643061B1 (zh) |
CN (1) | CN112567498A (zh) |
TW (1) | TWI727389B (zh) |
WO (1) | WO2020033698A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11387112B2 (en) * | 2018-10-04 | 2022-07-12 | Tokyo Electron Limited | Surface processing method and processing system |
US11903328B2 (en) * | 2020-02-07 | 2024-02-13 | International Business Machines Corporation | Self assembled monolayer formed on a quantum device |
KR102406174B1 (ko) | 2020-09-08 | 2022-06-08 | 주식회사 이지티엠 | 선택성 부여제를 이용한 영역 선택적 박막 형성 방법 |
JP2022075394A (ja) * | 2020-11-06 | 2022-05-18 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
JP7315744B1 (ja) * | 2022-03-14 | 2023-07-26 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3324455B2 (ja) * | 1997-07-18 | 2002-09-17 | 信越半導体株式会社 | 珪素系半導体基板の清浄化方法 |
US7045170B1 (en) * | 2002-04-03 | 2006-05-16 | Sandia Corporation | Anti-stiction coating for microelectromechanical devices |
FI117247B (fi) * | 2004-06-24 | 2006-08-15 | Beneq Oy | Materiaalin seostaminen selektiivisesti |
JP4065962B2 (ja) | 2005-04-15 | 2008-03-26 | 国立大学法人名古屋大学 | 自己組織化単分子膜の作製方法とその利用 |
US8293658B2 (en) * | 2010-02-17 | 2012-10-23 | Asm America, Inc. | Reactive site deactivation against vapor deposition |
JP6637231B2 (ja) * | 2014-10-07 | 2020-01-29 | エア・ウォーターNv株式会社 | 金属の表面改質方法および金属製品 |
WO2016138284A1 (en) * | 2015-02-26 | 2016-09-01 | Applied Materials, Inc. | Methods for selective dielectric deposition using self-assembled monolayers |
US10100406B2 (en) * | 2015-04-17 | 2018-10-16 | Versum Materials Us, Llc | High purity tungsten hexachloride and method for making same |
US10428421B2 (en) * | 2015-08-03 | 2019-10-01 | Asm Ip Holding B.V. | Selective deposition on metal or metallic surfaces relative to dielectric surfaces |
US20170092533A1 (en) | 2015-09-29 | 2017-03-30 | Applied Materials, Inc. | Selective silicon dioxide deposition using phosphonic acid self assembled monolayers as nucleation inhibitor |
US9947578B2 (en) * | 2015-11-25 | 2018-04-17 | Applied Materials, Inc. | Methods for forming low-resistance contacts through integrated process flow systems |
EP4358119A3 (en) * | 2016-03-03 | 2024-07-31 | Applied Materials, Inc. | Improved self-assembled monolayer blocking with intermittent air-water exposure |
KR20170135760A (ko) * | 2016-05-31 | 2017-12-08 | 도쿄엘렉트론가부시키가이샤 | 표면 처리에 의한 선택적 퇴적 |
US10358715B2 (en) | 2016-06-03 | 2019-07-23 | Applied Materials, Inc. | Integrated cluster tool for selective area deposition |
JP6766184B2 (ja) * | 2016-06-03 | 2020-10-07 | インテグリス・インコーポレーテッド | ハフニア及びジルコニアの蒸気相エッチング |
US9805974B1 (en) * | 2016-06-08 | 2017-10-31 | Asm Ip Holding B.V. | Selective deposition of metallic films |
KR20190047139A (ko) | 2016-09-30 | 2019-05-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 자가-정렬 비아들을 형성하는 방법들 |
WO2018089351A1 (en) | 2016-11-08 | 2018-05-17 | Applied Materials, Inc. | Geometric control of bottom-up pillars for patterning applications |
TW201833991A (zh) * | 2016-11-08 | 2018-09-16 | 美商應用材料股份有限公司 | 自對準圖案化之方法 |
US10283319B2 (en) * | 2016-12-22 | 2019-05-07 | Asm Ip Holding B.V. | Atomic layer etching processes |
-
2019
- 2019-08-08 WO PCT/US2019/045719 patent/WO2020033698A1/en active Application Filing
- 2019-08-08 CN CN201980053966.2A patent/CN112567498A/zh active Pending
- 2019-08-08 JP JP2021506423A patent/JP7189321B2/ja active Active
- 2019-08-08 US US16/535,499 patent/US12024770B2/en active Active
- 2019-08-08 KR KR1020217006985A patent/KR102643061B1/ko active IP Right Grant
- 2019-08-12 TW TW108128544A patent/TWI727389B/zh active
Also Published As
Publication number | Publication date |
---|---|
JP2021533272A (ja) | 2021-12-02 |
WO2020033698A1 (en) | 2020-02-13 |
US20200048762A1 (en) | 2020-02-13 |
TWI727389B (zh) | 2021-05-11 |
JP7189321B2 (ja) | 2022-12-13 |
KR20210031530A (ko) | 2021-03-19 |
KR102643061B1 (ko) | 2024-02-29 |
CN112567498A (zh) | 2021-03-26 |
US12024770B2 (en) | 2024-07-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7483839B2 (ja) | エアギャップの形成方法 | |
TWI727389B (zh) | 使用自組裝單層的選擇性沉積的方法 | |
US10199230B2 (en) | Methods for selective deposition of metal silicides via atomic layer deposition cycles | |
TWI394858B (zh) | 用於沉積具有降低電阻率及改良表面形態之鎢膜的方法 | |
TW201719719A (zh) | 用於原位清洗銅表面以及沉積與移除自組裝單層的方法與設備 | |
JP2018512504A (ja) | 自己組織化単分子膜を用いた選択的誘電体堆積のための方法 | |
TW201809346A (zh) | 反應室鈍化以及金屬膜的選擇性沈積 | |
TWI687994B (zh) | 用於經由原子層沉積循環之蝕刻的方法 | |
CN105164791A (zh) | 沉积金属合金膜的方法 | |
TWI729285B (zh) | 金屬薄膜的選擇性沈積 | |
TW201329276A (zh) | 使用鋁烷為基礎的前驅物的金屬薄膜沉積 | |
US10879081B2 (en) | Methods of reducing or eliminating defects in tungsten film | |
US20200071816A1 (en) | Methods for selective deposition using molybdenum hexacarbonyl | |
KR20180111556A (ko) | 에칭 방법 및 에칭 장치 | |
TWI750364B (zh) | 形成鈦矽化物區域之方法 | |
KR20210158862A (ko) | 인-시튜 원자층 증착 프로세스 | |
US20110303639A1 (en) | Methods for processing substrates having metal hard masks | |
TW201523728A (zh) | 半導體元件之製造方法 | |
JP2006278486A (ja) | 薄膜堆積体および薄膜堆積体の製造方法 | |
CN109390274A (zh) | 对被处理体进行处理的方法 | |
KR102709945B1 (ko) | 텅스텐 막에서의 결함들을 감소시키거나 제거하는 방법들 | |
TW202343548A (zh) | 用於cmos裝置的觸點形成處理 |