JP2021533272A - 自己組織化単分子層を使用する選択的堆積のための方法 - Google Patents
自己組織化単分子層を使用する選択的堆積のための方法 Download PDFInfo
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- JP2021533272A JP2021533272A JP2021506423A JP2021506423A JP2021533272A JP 2021533272 A JP2021533272 A JP 2021533272A JP 2021506423 A JP2021506423 A JP 2021506423A JP 2021506423 A JP2021506423 A JP 2021506423A JP 2021533272 A JP2021533272 A JP 2021533272A
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- assembled monolayer
- substrate
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- 239000002094 self assembled monolayer Substances 0.000 title claims abstract description 61
- 239000013545 self-assembled monolayer Substances 0.000 title claims abstract description 61
- 238000000034 method Methods 0.000 title claims abstract description 57
- 230000008021 deposition Effects 0.000 title claims abstract description 31
- 229910052751 metal Inorganic materials 0.000 claims abstract description 127
- 239000002184 metal Substances 0.000 claims abstract description 127
- 239000010410 layer Substances 0.000 claims abstract description 75
- 239000000758 substrate Substances 0.000 claims abstract description 71
- 238000000151 deposition Methods 0.000 claims abstract description 55
- 150000001282 organosilanes Chemical class 0.000 claims abstract description 47
- 150000005309 metal halides Chemical class 0.000 claims abstract description 40
- 229910001507 metal halide Inorganic materials 0.000 claims abstract description 39
- 229910001510 metal chloride Inorganic materials 0.000 claims abstract description 28
- 239000007789 gas Substances 0.000 claims description 24
- 125000000217 alkyl group Chemical group 0.000 claims description 4
- PZVDSEMMSUQGSR-UHFFFAOYSA-N N-[bis(dimethylamino)-octadecylsilyl]-N-methylmethanamine Chemical compound C(CCCCCCCCCCCCCCCCC)[Si](N(C)C)(N(C)C)N(C)C PZVDSEMMSUQGSR-UHFFFAOYSA-N 0.000 claims description 2
- 229910001512 metal fluoride Inorganic materials 0.000 abstract description 21
- 238000010586 diagram Methods 0.000 abstract description 2
- 239000002052 molecular layer Substances 0.000 abstract description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 20
- 150000004706 metal oxides Chemical class 0.000 description 20
- 239000000463 material Substances 0.000 description 14
- 238000000231 atomic layer deposition Methods 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 229910001508 alkali metal halide Inorganic materials 0.000 description 8
- 150000008045 alkali metal halides Chemical class 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910001514 alkali metal chloride Inorganic materials 0.000 description 6
- -1 lithium halides Chemical class 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
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- 239000010703 silicon Substances 0.000 description 6
- 239000003989 dielectric material Substances 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- 238000005086 pumping Methods 0.000 description 5
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- 239000000126 substance Substances 0.000 description 5
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- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 150000004820 halides Chemical class 0.000 description 4
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000015654 memory Effects 0.000 description 4
- 239000010955 niobium Substances 0.000 description 4
- FGDZQCVHDSGLHJ-UHFFFAOYSA-M rubidium chloride Chemical compound [Cl-].[Rb+] FGDZQCVHDSGLHJ-UHFFFAOYSA-M 0.000 description 4
- PYJJCSYBSYXGQQ-UHFFFAOYSA-N trichloro(octadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl PYJJCSYBSYXGQQ-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- 229910001515 alkali metal fluoride Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- AIYUHDOJVYHVIT-UHFFFAOYSA-M caesium chloride Chemical compound [Cl-].[Cs+] AIYUHDOJVYHVIT-UHFFFAOYSA-M 0.000 description 2
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 2
- GZGREZWGCWVAEE-UHFFFAOYSA-N chloro-dimethyl-octadecylsilane Chemical compound CCCCCCCCCCCCCCCCCC[Si](C)(C)Cl GZGREZWGCWVAEE-UHFFFAOYSA-N 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 125000002147 dimethylamino group Chemical group [H]C([H])([H])N(*)C([H])([H])[H] 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001103 potassium chloride Substances 0.000 description 2
- 235000011164 potassium chloride Nutrition 0.000 description 2
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 2
- 229940102127 rubidium chloride Drugs 0.000 description 2
- AHLATJUETSFVIM-UHFFFAOYSA-M rubidium fluoride Chemical compound [F-].[Rb+] AHLATJUETSFVIM-UHFFFAOYSA-M 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- YBCAZPLXEGKKFM-UHFFFAOYSA-K ruthenium(iii) chloride Chemical compound [Cl-].[Cl-].[Cl-].[Ru+3] YBCAZPLXEGKKFM-UHFFFAOYSA-K 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- MZFUHFWRXGYVSB-UHFFFAOYSA-N CN(C)[Si](CCCCC)(N(C)C)N(C)C Chemical compound CN(C)[Si](CCCCC)(N(C)C)N(C)C MZFUHFWRXGYVSB-UHFFFAOYSA-N 0.000 description 1
- JOVJSJNDGJZSNA-UHFFFAOYSA-N CN(C)[Si](CCCCCCCCC)(N(C)C)N(C)C Chemical compound CN(C)[Si](CCCCCCCCC)(N(C)C)N(C)C JOVJSJNDGJZSNA-UHFFFAOYSA-N 0.000 description 1
- NJHTUVVFQQLWPR-UHFFFAOYSA-N CN(C)[Si](CCCCCCCCCCC)(N(C)C)N(C)C Chemical compound CN(C)[Si](CCCCCCCCCCC)(N(C)C)N(C)C NJHTUVVFQQLWPR-UHFFFAOYSA-N 0.000 description 1
- GCSSIVWNVUZJMI-UHFFFAOYSA-N CN(C)[Si](CCCCCCCCCCCCC)(N(C)C)N(C)C Chemical compound CN(C)[Si](CCCCCCCCCCCCC)(N(C)C)N(C)C GCSSIVWNVUZJMI-UHFFFAOYSA-N 0.000 description 1
- QDTWUXXCSDOPKU-UHFFFAOYSA-N CN(C)[Si](CCCCCCCCCCCCCCC)(N(C)C)N(C)C Chemical compound CN(C)[Si](CCCCCCCCCCCCCCC)(N(C)C)N(C)C QDTWUXXCSDOPKU-UHFFFAOYSA-N 0.000 description 1
- VGVMMTATKCNSRV-UHFFFAOYSA-N CN(C)[Si](CCCCCCCCCCCCCCCCC)(N(C)C)N(C)C Chemical class CN(C)[Si](CCCCCCCCCCCCCCCCC)(N(C)C)N(C)C VGVMMTATKCNSRV-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ANLMLIWBVFAFHB-UHFFFAOYSA-N N-[bis(dimethylamino)-dodecylsilyl]-N-methylmethanamine Chemical compound CN(C)[Si](CCCCCCCCCCCC)(N(C)C)N(C)C ANLMLIWBVFAFHB-UHFFFAOYSA-N 0.000 description 1
- ZXJWJAQZELLKGE-UHFFFAOYSA-N N-[bis(dimethylamino)-heptylsilyl]-N-methylmethanamine Chemical compound CN(C)[Si](CCCCCCC)(N(C)C)N(C)C ZXJWJAQZELLKGE-UHFFFAOYSA-N 0.000 description 1
- ZETNTFPLEKWPLQ-UHFFFAOYSA-N N-[bis(dimethylamino)-hexadecylsilyl]-N-methylmethanamine Chemical class CN(C)[Si](CCCCCCCCCCCCCCCC)(N(C)C)N(C)C ZETNTFPLEKWPLQ-UHFFFAOYSA-N 0.000 description 1
- UPEJPVOEZXBAII-UHFFFAOYSA-N N-[bis(dimethylamino)-hexylsilyl]-N-methylmethanamine Chemical compound CCCCCC[Si](N(C)C)(N(C)C)N(C)C UPEJPVOEZXBAII-UHFFFAOYSA-N 0.000 description 1
- OKKNBLRDTXEMFS-UHFFFAOYSA-N N-[bis(dimethylamino)-tetradecylsilyl]-N-methylmethanamine Chemical compound CN(C)[Si](CCCCCCCCCCCCCC)(N(C)C)N(C)C OKKNBLRDTXEMFS-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910001513 alkali metal bromide Inorganic materials 0.000 description 1
- 229910001516 alkali metal iodide Inorganic materials 0.000 description 1
- 108010038083 amyloid fibril protein AS-SAM Proteins 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
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- 238000001816 cooling Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910001509 metal bromide Inorganic materials 0.000 description 1
- 229910001511 metal iodide Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- FHBURLBCXNMPJX-UHFFFAOYSA-N n-[bis(dimethylamino)-ethylsilyl]-n-methylmethanamine Chemical compound CC[Si](N(C)C)(N(C)C)N(C)C FHBURLBCXNMPJX-UHFFFAOYSA-N 0.000 description 1
- AHKKZIUZTWZKDR-UHFFFAOYSA-N n-[bis(dimethylamino)-methylsilyl]-n-methylmethanamine Chemical compound CN(C)[Si](C)(N(C)C)N(C)C AHKKZIUZTWZKDR-UHFFFAOYSA-N 0.000 description 1
- JSIUWTSVPJWBNO-UHFFFAOYSA-N n-[bis(dimethylamino)-octylsilyl]-n-methylmethanamine Chemical compound CCCCCCCC[Si](N(C)C)(N(C)C)N(C)C JSIUWTSVPJWBNO-UHFFFAOYSA-N 0.000 description 1
- PIZDPXXHLAAKFM-UHFFFAOYSA-N n-[butyl-bis(dimethylamino)silyl]-n-methylmethanamine Chemical compound CCCC[Si](N(C)C)(N(C)C)N(C)C PIZDPXXHLAAKFM-UHFFFAOYSA-N 0.000 description 1
- FNCPFEWAXAOHNQ-UHFFFAOYSA-N n-[decyl-bis(dimethylamino)silyl]-n-methylmethanamine Chemical compound CCCCCCCCCC[Si](N(C)C)(N(C)C)N(C)C FNCPFEWAXAOHNQ-UHFFFAOYSA-N 0.000 description 1
- KAHVZNKZQFSBFW-UHFFFAOYSA-N n-methyl-n-trimethylsilylmethanamine Chemical compound CN(C)[Si](C)(C)C KAHVZNKZQFSBFW-UHFFFAOYSA-N 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- SLYCYWCVSGPDFR-UHFFFAOYSA-N octadecyltrimethoxysilane Chemical compound CCCCCCCCCCCCCCCCCC[Si](OC)(OC)OC SLYCYWCVSGPDFR-UHFFFAOYSA-N 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- YHBDIEWMOMLKOO-UHFFFAOYSA-I pentachloroniobium Chemical class Cl[Nb](Cl)(Cl)(Cl)Cl YHBDIEWMOMLKOO-UHFFFAOYSA-I 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000011698 potassium fluoride Substances 0.000 description 1
- 235000003270 potassium fluoride Nutrition 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- UIDUKLCLJMXFEO-UHFFFAOYSA-N propylsilane Chemical compound CCC[SiH3] UIDUKLCLJMXFEO-UHFFFAOYSA-N 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- 235000013024 sodium fluoride Nutrition 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- YOUIDGQAIILFBW-UHFFFAOYSA-J tetrachlorotungsten Chemical compound Cl[W](Cl)(Cl)Cl YOUIDGQAIILFBW-UHFFFAOYSA-J 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- KPGXUAIFQMJJFB-UHFFFAOYSA-H tungsten hexachloride Chemical compound Cl[W](Cl)(Cl)(Cl)(Cl)Cl KPGXUAIFQMJJFB-UHFFFAOYSA-H 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
- C23C16/0236—Pretreatment of the material to be coated by cleaning or etching by etching with a reactive gas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/60—Deposition of organic layers from vapour phase
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
- C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
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Abstract
Description
MOx+WClx↑熱→WCly↑+MClz↑+O2↑
に示される。
MOx+WClx↑+H2↑熱→W↓+MClx↑+H2O↑
に示される。
Claims (15)
- 金属表面及び誘電体表面を有する基板上に層を選択的に堆積させる方法であって、
(a)前記金属表面を一又は複数の金属ハロゲン化物と接触させて、曝露された金属表面を形成すること;
(b)オルガノシランをベースとする自己組織化単分子層を前記誘電体表面上で成長させること;及び
(c)前記基板の前記曝露された金属表面上に層を選択的に堆積させることであって、前記オルガノシランをベースとする自己組織化単分子層が前記誘電体表面上への前記層の堆積を抑制する、層を選択的に堆積させること;
を含む、方法。 - 前記金属表面を一又は複数の金属ハロゲン化物と接触させることが、約300から約400℃の第1の温度で実施される、請求項1に記載の方法。
- 前記金属表面を一又は複数の金属ハロゲン化物と接触させることが、1から15Torrの値の圧力で実施される、請求項1又は2に記載の方法。
- 前記金属表面を一又は複数の金属ハロゲン化物と接触させることが、約5分間から約20分間実施される、請求項1から3のいずれか一項に記載の方法。
- 前記一又は複数の金属ハロゲン化物が気体である、請求項1から4のいずれか一項に記載の方法。
- 前記一又は複数の金属ハロゲン化物が、WClx、NbClx、RuClx、MoClx、又はそれらの組み合わせを含む金属塩化物であり、xが整数である、請求項1から5のいずれか一項に記載の方法。
- 前記金属表面を一又は複数の金属ハロゲン化物と前記接触させることが、酸素非含有チャンバ内で実施される、請求項1から6のいずれか一項に記載の方法。
- 前記金属表面を一又は複数の金属ハロゲン化物と接触させることが、前記金属表面上に曝露された金属表面を形成する、請求項1から7のいずれか一項に記載の方法。
- 前記オルガノシランをベースとする自己組織化単分子層を成長させることが、前記基板をオルガノシランを含む気体に曝露させることを含む、請求項1から8のいずれか一項に記載の方法。
- 前記オルガノシランをベースとする自己組織化単分子層がC−8からC−30アルキル鎖を含む、請求項1から9のいずれか一項に記載の方法。
- 前記オルガノシランをベースとする自己組織化単分子層を成長させることが、約100から約200℃の第1の温度で実施される、請求項1から10のいずれか一項に記載の方法。
- 前記オルガノシランをベースとする自己組織化単分子層を成長させることが、10から350Torrの値の圧力で実施される、請求項1から10のいずれか一項に記載の方法。
- 前記オルガノシランをベースとする自己組織化単分子層を成長させることが、約2から約3時間の持続時間で実施される、請求項1から12のいずれか一項に記載の方法。
- 前記オルガノシランをベースとする自己組織化単分子層を成長させることが酸素非含有チャンバ内で実施され、前記オルガノシランをベースとする自己組織化単分子層がトリス(ジメチルアミノ)オクタデシルシランを含む、請求項1から13のいずれか一項に記載の方法。
- コンピュータ可読媒体であって、それに格納された命令を有し、前記命令が、実行されると、処理チャンバに、(a)金属表面を一又は複数の金属ハロゲン化物と接触させて、曝露された金属表面を形成すること;(b)オルガノシランをベースとする自己組織化単分子層を誘電体表面上で成長させること;及び(c)基板の前記曝露された金属表面上に層を選択的に堆積させることであって、前記オルガノシランをベースとする自己組織化単分子層が前記誘電体表面上への前記層の堆積を抑制する、層を選択的に堆積させることを含む、前記金属表面及び前記誘電体表面を有する前記基板上に前記層を選択的に堆積させる方法を実施させる、コンピュータ可読媒体。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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US201862717452P | 2018-08-10 | 2018-08-10 | |
US62/717,452 | 2018-08-10 | ||
US16/535,499 | 2019-08-08 | ||
PCT/US2019/045719 WO2020033698A1 (en) | 2018-08-10 | 2019-08-08 | Methods for selective deposition using self-assembled monolayers |
US16/535,499 US12024770B2 (en) | 2018-08-10 | 2019-08-08 | Methods for selective deposition using self-assembled monolayers |
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JP7189321B2 (ja) | 2022-12-13 |
KR20210031530A (ko) | 2021-03-19 |
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