TW201935641A - 半導體模組之接合層、半導體模組及其製造方法 - Google Patents

半導體模組之接合層、半導體模組及其製造方法 Download PDF

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TW201935641A
TW201935641A TW108102646A TW108102646A TW201935641A TW 201935641 A TW201935641 A TW 201935641A TW 108102646 A TW108102646 A TW 108102646A TW 108102646 A TW108102646 A TW 108102646A TW 201935641 A TW201935641 A TW 201935641A
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Taiwan
Prior art keywords
semiconductor module
bonding layer
substrate
electronic component
composition ratio
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TW108102646A
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English (en)
Inventor
岩田広太郎
樋上晃裕
村岡弘樹
山口朋彦
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日商三菱綜合材料股份有限公司
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Publication of TW201935641A publication Critical patent/TW201935641A/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
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    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
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    • B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
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    • B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
    • B22F7/064—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts using an intermediate powder layer
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    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • B22F7/08—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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    • C22C1/0425—Copper-based alloys
    • C—CHEMISTRY; METALLURGY
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    • C—CHEMISTRY; METALLURGY
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    • C—CHEMISTRY; METALLURGY
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    • C22C9/02—Alloys based on copper with tin as the next major constituent
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Abstract

為介於電子零件(14)和基板(15)之間，且藉由CuSn金屬間化合物構成的半導體模組(10)之接合層(13)。被構成從該接合層(13)之中心部(13a)至電子零件(14)之端部(14a、14b)之接合部(13b、13c)，Sn之組成比例增加。使含有Cu核Sn殼粉末之膏體介於電子零件(14)和基板(15)之間，在該中介的狀態，於惰性氛圍或還原性氛圍下，對電子零件(14)及/或基板(15)施加1MPa～30MPa之壓力，並且以250℃～350℃之溫度加熱1分鐘～10分鐘期間，而將電子零件(14)接合於基板(15)，依此製造半導體模組(10)。

Description

半導體模組之接合層、半導體模組及其製造方法
本發明係關於介於半導體晶片元件、LED晶片元件等之電子零件和基板之間的半導體模組之接合層。而且，關於使用該接合層之半導體模組及其製造方法。另外，本國際申請根據於2018年1月24日申請的日本專利申請第2018-009471號(特願2018-009471)主張優先權，本國際申請援用日本專利申請特願2018-009471的整個內容。
近年來，即使在超過200℃的高溫亦動作的SiC般之寬能隙半導體受到注目。作為在高溫動作的半導體晶片元件之接合方法，包含使Cu和Sn之接合材介於半導體晶片和基板之間，以較Sn之熔點高的溫度進行加熱，使上述接合材成為由Cu6 Sn5 或Cu3 Sn形成的組成之金屬間化合物(Inter-Metallic Compound：IMC)的暫態液相燒結法(Transient Liquid Phase Sintering：TLP法)的接合方法。揭示有使用藉由該接合方法形成之連接層或接合劑的半導體模組之製造方法(例如，參照專利文獻1及2)。
在專利文獻1之半導體模組之製造方法中，以特定壓力互相加壓兩個含Cu焊接母材，和被配置在兩個含Cu焊接母材之間的含Sn焊料層，使該些焊料溶融，在特定時間結束之後，從該液狀之焊料擴散的Cu及Sn形成包含金屬間化合物CuSn相的連接層。即是，在該製造方法中，將表面施予Cu金屬化之接合母材彼此夾著含Sn焊料層而形成接合層。若藉由該製造方法時，改善相對於伴隨著在功率半導體模組之動作中產生的高溫度之變動導致的頻繁溫度變化的耐性(以下，稱為高溫耐性)。
在專利文獻2之半導體模組之製造方法中，在半導體晶片元件或基板之接合面，塗佈包含Cu粒子和Sn粒子之接合劑的工程，和使接合劑介於半導體晶片元件之之接合面和基板之接合面而進行對準的工程，和以較Sn之熔點高的溫度進行加熱，使接合劑之Cu和Sn進行暫態性液相燒結，以使該接合劑成為包含Cu6 Sn5 和Cu3 Sn之組成的工程，和進一步加熱，使接合劑之Cu6 Sn5 和變化成Cu3 Sn，而增加接合劑中的Cu3 Sn之比率的工程。即是，在該製造方法中，混合粉末狀之Cu和粉末狀之Sn，在該混合物添加溶劑或助焊劑使成為膏體化，該膏體印刷在半導體晶片元件之電極和基板之電極。若藉由該製造方法時，於在高溫動作之半導體晶片元件之接合，使用以往的焊料之方法的情況，雖然於在高溫下的動作時，由於焊料之再溶融、在界面形成金屬間化合物(IMC)之形成等，使得半導體晶片元件之性能劣化，但視為可以解決此問題。
先前技術文獻
專利文獻
專利文獻1：日本特開2012-74726號公報(摘要)
專利文獻2：日本特開2014-199852號公報(請求項1、段落[0005]、段落[0006])。
發明所欲解決之課題
記載於專利文獻1之連接層或記載於專利文獻2之接合劑(以下，稱為接合層)，係接和層之組成皆以金屬間化合物Cu6 Sn5 相或Cu3 Sn均勻地從搭載於基板之半導體晶片元件之接合面之一方之端部形成至另一方之端部。如此的CuSn金屬間化合物層雖然高強度，但是因以脆性材料製作，故在半導體模組重複開啟關閉動作而使得半導體晶片元件及/或基板發熱和冷卻反覆之情況，如圖5所示般，在半導體模組1中，經由藉由CuSn金屬間化合物層構成的接合層3而被接合的半導體晶片元件4及基板5，無法充分地緩合由於兩者之熱膨脹差而產生的朝接合層的應力，從接合層3之端部於水平方向產生裂紋C。該裂紋C可能成為使從半導體晶片元件4產生的熱散熱至基板5之時的熱阻因素。有時會有該裂紋C進展，而產生半導體晶片元件4之剝離，即使使電子零件受損之情形。
本發明之目的在於解決上述課題，提供接合時對電子零件及基板的密接性優良，接合強度高，即使於接合後，曝露於高溫氛圍也不會再熔融，再者不會因在電子零件及/或基板反覆發熱和冷卻之時產生的裂紋而使電子零件受損的半導體模組之接合層。本發明之另外的目的在於提供即使半導體模組重複開啟關閉動作亦不會使電子零件受損之半導體模組及其製造方法。

用以解決課題之手段
本發明之第1觀點如圖3所示般，為一種半導體模組10之接合層13，其係屬於介於電子零件14和基板15之間，藉由CuSn金屬間化合物構成的半導體模組10之接合層13，其特徵在於，被構成從接合層13之中心部13a至電子零件14之端部14a、14b之接合部13b、13c增加Sn之組成比例。
本發明之第2觀點係根據第1觀點的發明，為一種半導體模組10之接合層13，其中，在接合層13之中心部13a的Sn之組成比例為20質量%～50質量%，Cu之組成比例為其殘部，在電子零件14之端部14a、14b之接合部13b、13c的Sn之組成比例為60質量%～80質量%，Cu之組成比例為其殘部。
本發明之第3觀點係根據第1或第2觀點的發明，其中，接合層13之厚度為10μm～200μm。
本發明之第4觀點係第1至第3觀點中之任一者觀點的接合層13為介於電子零件14和基板15之間的半導體模組10。
本發明之第5觀點係一種半導體模組之製造方法，其係使含有Cu核Sn殼粉末11之膏體12a介於電子零件14和基板15之間，在該中介的狀態，於惰性氛圍或還原性氛圍下，對電子零件14及/或基板15施加1MPa～30MPa之壓力，並且以250℃～350℃之溫度加熱1分鐘～10分鐘期間，而將電子零件14接合於基板15，依此製造半導體模組10。
本發明之第6觀點係根據第5觀點的發明，為一種半導體模組10之製造方法，其中，Cu核Sn殼粉末11係Sn之組成比例為40質量%～60質量%，Cu之組成比例為其殘部。

[發明效果]
如圖3所示般，在本發明之第1觀點之接合層13中，因被構成從其中心部13a至電子零件14之端部14a、14b之接合部13b、13c，Sn之組成比例增加(參照圖3之放大圖)，故中心部13a成為Cu組成多的CuSn金屬間化合物，接合部13b、13c成為Sn組成多的CuSn金屬間化合物。依此，中心部13a之接合層13係高溫耐性強，且散熱性優良。再者，接合部13b、13c之脆性比起以往的接合部減少，即使半導體模組10重複開啟關閉動作使得電子零件14及/或基板15反覆發熱和冷卻而對接合層13施加冷熱衝擊，也在製造時施加比較大應力的電子零件14之端部14a、14b伸長收縮。而且，如圖4所示般，由於電子零件14及基板15之熱膨脹差而從接合部13之端部13b、13c在水平方向產生裂紋C，亦可緩和朝接合部13b、13c之應力，使裂紋C難以進展。其結果，可以防止使從半導體晶片元件14發生之熱流暢地散熱至基板15而可以防止電子零件之損傷。
在本發明之第2觀點的接合層13中，由於如圖3之放大圖所示般，在接合層13之中心部13a的Sn之組成比例為20質量%～50質量%，Cu之組成比例為其殘部，在電子零件14之端部14a、14b之接合部13b、13c的Sn之組成比例為60質量%～80質量%，Cu之組成比為其殘部，故除了具有對電子零件及基板的高密接性、高接合強度及高溫耐性之外，即使在接合部13a、13b之接合層13的脆性更確實地減少，對接合層13施加冷熱衝擊，而如圖4所示般，從接合部13之端部13b、13c在水平方向產生裂紋C，亦可以緩和朝接合部13b、13c的應力，裂紋C更難進展。
在本發明之第3觀點之接合層13中，因其厚度為10μm～200μm，故除了具有高接合強度，不再熔融之特長外，對冷熱衝擊的耐久性更高。
本發明之第4觀點之半導體模組10因藉由CuSn金屬間化合物構成之接合層13具有第1至第3觀點之特徵，故即使半導體模組10重複開啟關閉動作，而從接合部13之端部13b、13c在水平方向產生裂紋C，亦可以緩和朝接合部13b、13c的應力，裂紋C難進展。其結果，可以防止使從半導體晶片元件14發生之熱順暢地散熱至基板15而可以防止電子零件之損傷。
在本發明之第5觀點之半導體模組10之製造方法中，如圖1所示般，使含有Cu核Sn殼粉末11之膏體12a介於電子零件14和基板15之間，如圖2所示般，在該中介之狀態，惰性氛圍或還原性氛圍下，對電子零件14及/或基板15施加1MPa～30MPa之壓力並且以250℃～350℃之溫度加熱1分鐘～10分鐘期間。依此，如在圖1之放大圖及圖2之放大圖分別所示般，藉由加熱，構成殼之熔點232℃之Sn熔融，殼構造崩塌使得相鄰的粉末之Sn彼此成為一體而成為液狀。另外，構成膏體中之Cu核Sn殼粉末11之核的熔點1085℃之Cu不熔融，藉由上述液狀之Sn和一部分擴散反應，開始形成CuSn金屬間化合物。藉由加壓，液狀之Sn從電子零件14之下面中心部朝端部14a及14b移動，在電子零件14之下面中心部，不溶融之Cu(圖中，以實線之圓形表示，以下相同。)，和僅形成一些的CuSn金屬間化合物成為停留在熱壓前之狀態的接合層前驅體12b。特定時間之熱壓成形後，當在加壓狀態冷卻時，如圖3所示般，電子零件14和基板15之間的接合層前驅體12b，係其中心部由Cu及CuSn金屬間化合物形成，其兩端部成為由Sn及CuSn金屬化合物形成之接合層13(圖中，溶融的Cu以虛線之圓形表示)。依此，電子零件14藉由接合層13被接合於基板15，接合層13從其接合層13之中心部13a至電子零件14之端部14a、14b之接合部13b、13c成為Sn之組成比例增加的CuSn金屬間化合物(參照圖3之放大圖)。
在本發明之第6觀點中，因Cu核Sn殼粉末11中之Sn之組成比例為特定比例，故容易使在接合層13之中心部13a的Sn之組成比例成為20質量%～50質量%，將在接合部13b、13c的Sn之組成比例成為60質量%～80質量%。
以下，根據圖面說明用以實施本發明之型態。
[半導體模組之製造方法]
[Cu核Sn殼粉末]
如圖1之放大圖所示般，本實施型態之Cu核Sn殼粉末11係核(中心核)11a由Cu或Cu和Sn之金屬間化合部形成，殼(外殼)11b由Sn形成。因此，具有當以250℃～350℃之溫度加熱時，殼之Sn熔融，但核之Cu不熔融之特徵。
該Cu核Sn殼粉末係以平均粒徑為1μm～10μm為佳。在未滿1μm，粉末容易凝聚，難以膏體化，再者Sn殼之厚度變薄，故藉由接合時之Cu/Sn之擴散，Sn液相不足，因此有成為稀疏的接合組織的不良狀況。當超過10μm時，因Sn殼之厚度變厚，故藉由接合時之Cu/Sn之擴散，生成CuSn金屬間化合物需要時間。再者，粉末間之填充不足，有成為稀疏的接合組織的不良狀況。該平均粒徑係利用使用雷射繞射散射法之粒度分布測定裝置(崛製作所公司製、雷射繞射/散射式粒子徑分布測定裝置LA-950)測定的體積累積中位徑(Median直徑，D50 )。
再者，該Cu核Sn殼粉末係Sn之組成比例為40質量%～60質量%，Cu之組成比例組合為其殘部為佳。更佳的Sn之組成比例為45質量%～55質量%。在Sn之組成比例為未滿40質量%時，後述相對於電子零件及基板之密接性及接合性不夠高，於電子零件及/或基板之熱壓成形時熔融之Sn之量少，電子零件之端部之接合層之Sn之組成比例難增加。當Sn之組成比例超過60質量%時，在熱壓成形後殘存的Sn變多，耐熱性差。
針對本實施型態之Cu核Sn殼粉末之製造方法予以說明。首先，藉由分別添加並混合含Cu之化合物，例如氯化銅(II)、硫酸銅(II)或醋酸銅或Cu粉末，和含Sn化合物，例如氯化錫(II)、硫酸錫(II)或醋酸錫(II)或草酸錫(II)，和分散劑，調製溶解液。在溶解液中之含錫的化合物、含銅的化合物之比例，係於Cu核Sn殼粉末製造後，調整成Sn及Cu之組成比例成為上述範圍。
作為溶劑，可舉出水、醇、醚、酮、酯等。再者，作為分散劑，可以舉出纖維素系、乙烯基系、多元醇等，其他可以使用明膠、酪蛋白等。調製的溶解液調整成pH0～2.0之範圍。PH係以考慮到生成的焊接粉末之再熔解等，調整至0～2.0之範圍為佳。
接著，調製熔解還原劑之水溶液，將該水溶液之pH調整成與上述調製的溶解液相同的程度。作為還原劑，可舉出四氫硼酸鈉、二甲胺硼烷等之硼氫化物、肼等之氮化合物、三價鈦離子或二價鉻離子等之金屬離子等。
接著，藉由在上述溶解液添加並混合還原劑水溶液，溶解液中之Sn離子、Cu離子被還原，獲得在Sn粉末、Cu粉末分散在液中的分散液。在該還原反應中，在使用包含上述Cu之化合物、包含Sn之化合物溶解的溶解液之情況，較Sn貴重的Cu被還原，最後Sn被還原。依此，形成由Cu形成的核(中心核)，和覆蓋該核之Sn形成的殼(外殼)構成的Cu核Sn殼粉末的前驅體。
並且，接著將該分散液藉由傾析等進行固液分離，以水或將pH調整成0.5～2之鹽酸水溶液、硝酸水溶液、硫酸水溶液或甲醇、乙醇、丙酮等洗淨回收的固形物。洗淨後，再次進行固液分離而回收固形物。以從洗淨至固液分離的工程重複2次～5次為佳。依此，能獲得Cu核Sn殼粉末。
[膏體]
將所獲得的Cu核Sn殼粉末以特定比例和接合用助焊劑混合使成為膏體。用於該膏體之調製的接合用助焊劑並無特別限定，可以使用眾知泛用的溶劑、松香、觸變劑及活性劑等之各成分而被調製的助焊劑。另外，本實施型態之膏體不含專利文獻2所示般的Cu粉末和Sn粉末混合於助焊劑而調製的膏體。
[使膏體介於電子零件和基板之間]
接著，如圖1所示般，使獲得的膏體12a介於本實施型態之半導體晶片元件、LED晶片元件等之電子零件14和基板15之間。例如，將安裝電子零件之部分開口的金屬遮罩與水平置放的基板重疊，在金屬遮罩上配置膏體，使用刮板使膏體流入金屬遮罩之開口部之後，在維持金屬遮罩之狀態使基板下降，依此使膏體殘存在相當於基板之上述開口部的位置。接著，藉由使電子零件載置於該膏體，使獲得的膏體介於電子零件和基板之間。藉由使金屬遮罩之厚度成為20μm～300μm，可以使後述的接合層之厚度成為10μm～200μm。
[熱壓成形]
接著，使電子零件14載置於於膏體12a之狀態，即是使膏體12a介於電子零件14和基板15之間的狀態，如圖2所示般，藉由無圖示之下壓和上壓，在墮性氛圍或還原性氛圍下，進行熱壓成形。熱壓成形條件係電子零件及/或基板被施加1MPa～30MPa之壓力，同時250℃～350℃之溫度被施加1分鐘～100分鐘期間。藉由該加熱，如圖2之放大圖所示般，膏體中之Cu核Sn殼粉末11之殼11b之Sn熔融，殼構造崩塌，相鄰的粉末之Sn彼此成為一體而成為液狀。藉由加壓，成為液狀之Sn從電子零件14之下面中心部移動至端部14a及14b，在電子零件14之下面中心部，不熔融之Cu成為停留在熱壓前之狀態的接合層前驅體12b。
該熱壓成形係為了防止獲得的接合層之氧化，在真空氣體、氮氣、氬氣或氮和氬之混合氣體等之惰性氛圍和氫之混合氣體或甲酸氣體等之還原性氛圍進行。在壓力未滿1MPa，將加壓所致的液狀化之Sn朝電子零件14之端部14a、14b之接合部13b、13c的擠壓力不足，不會引起在接合部13b、14b增加Sn組成。當壓力超過30MPa時，電子零件受損。較佳的壓力為2MPa～20MPa，更佳的壓力為5MPa～15MPa。再者，藉由以特定壓力進行加壓，可以使膏體之厚度，和後述的接合層之厚度成為10μm～200μm。
在熱壓成形時之溫度未滿250℃，Cu核Sn殼粉末之殼之Sn熔融不足，電子零件和基板之密接性及接合性差。當超過350℃時，當冷卻接合層前驅體12b之時，接合層前驅體12b之熱應力所致的變形變大，並且半導體模組之熱性負載變大。較佳的溫度為280℃～320℃。
在熱壓成形時之時間未滿1分鐘，Cu核Sn殼粉末之Sn及/或Cu之相互擴散所致的CuSn金屬間化核物之生成不足，接合層的高溫耐性差。將加熱時間之上限值設為10分鐘係由於上述CuSn金屬間化合物之生成幾乎在10分鐘期間結束，故超過10分鐘進行加熱，會浪費熱能，並且生產性下降。較佳時間為3分鐘～5分鐘。
[半導體模組]
當特定時間之熱壓成形後，在加壓狀態冷卻時，如圖3所示般，藉由CuSn金屬間化合物形成之接合層13，獲得電子零件14與基板15接合的半導體模組30。即是，於冷卻後，電子零件14和基板15之間的接合層前驅體12b變成CuSn金屬間化合物的接合層13。依此，電子零件14藉由接合層13被接合於基板15，接合層13係從其接合層13之中心部13a至電子零件14之端部14a、14b之接合部13b、13c，其Sn之組成比例增加的CuSn金屬間化合物。
接合層13因藉由熔點高之金屬間化合物Cu3 Sn(凝固開始溫度為676℃)或Cu6 Sn5 (凝固開始溫度為415℃)之CuSn金屬間化合物而被構成，故相對於電子零件14及基板15之接合強度高，即使於接合後被曝露於高溫氛圍，或於接合後被曝露於高溫氛圍，亦不再熔融，高溫耐性優。
接合層13係以在其中心部13a之Sn之組成比例為20質量%～50質量%，較佳為30質量%～40質量%，Cu之組成比例為其殘部，在電子零件14之端部14a、14b之接合部13b、13c的Sn之組成比例為60質量%～80質量%，較佳為60質量%～70質量%，Cu組成比例為其殘部的半導體模組10之接合層13為佳。
關於在接合層13之中心部13a的Sn之組成比例，在未滿20質量%時，在接合層13之中心部13a的對電子零件14及基板15的密接性及接合性容易下降。再者，當超過50質量%時，熱傳導性非良好的Cu6 Sn5 之比例變多，散熱性容易變差。
關於在電子零件14之端部14a、14b之接合部13b、13c的Sn之組成比例，在未滿60質量%時，無觀察到在接合部13b、13c之接合層13之脆性下降，當對接合部13b、13c施加冷熱衝擊時，難以發現應力緩和。再者，當超過80質量%時，Sn相即使在接合後仍殘存多量，高溫耐性容易下降。
接合層13之厚度為10μm～200μm，較佳為20μm～100μm。該厚度如上述般，藉由圖1所示之膏體11之厚度及熱壓成形時之加壓力被調整。當該厚度未滿10μm時，對電子零件14及基板15之接合層13的密接性及接合性容易下降。當超過200μm時，接合層13之熱阻變大，接合層之散熱特性容易下降。
本實施型態之半導體模組10中，接合層13係由具有以凝固開始溫度415℃之Cu6 Sn5 及/或凝固開始溫度676℃之Cu3 Sn為代表的高凝固開始溫度的CuSn金屬間化合物形成。依此，接合層13之耐熱性大幅地提升，可以防止再熔融及接合強度下降，尤其適合安裝於被曝露於高溫氛圍之電子零件的基板。再者，因接合層13中之端部13b、13c之Sn組成比例高，故即使在電子零件14及/或基板15反覆發熱和冷卻之時，延長縮收而緩和應力，並且如圖4所示般，由於電子零件14和基板15之各熱膨脹差引起從接合部13之端部13b、13c在水平方向產生裂紋C，亦可以緩和朝端部13b、13c之應力，裂紋C難進展。其結果，可以防止使從半導體晶片元件14發生之熱流暢地散熱至基板15而可以防止電子零件之損傷。

[實施例]
接著，詳細說明本發明之實施例與比較例。
[實施例1]
將添加有平均粒徑5μm之Cu核Sn殼粉末(Cu：50質量%，Sn：50質量%)和弱活性劑之弱活性化助焊劑(RMA助焊劑)混合成助焊劑之比例成為13質量%而調製膏體。將獲得的膏體以厚度50μm塗佈在0.5mm厚度之20mm□之科伐合金(Fe-N i-Co系合金)基板上。接著，在該膏體上，搭載背面被濺鍍Au之2.5mm□之半導體晶片元件。接著，將搭載半導體元件之科伐合金基板導入至加壓加熱爐內，於是在氮氛圍中，對半導體晶片元件和科伐合金基板施加10MPa之壓力，以300℃之溫度維持5分鐘。依此，獲得半導體晶片元件被接合於科伐合金基板之模擬性的半導體模組。於表1表示對實施例1之熱壓成形前之膏體條件和模擬性的半導體模組進行熱壓成形的條件。
[實施例2～11、比較例2～7]
設定成表1所示的熱壓成形前之膏體的條件和對模擬性的半導體模組進行熱壓成形的條件，與實施例1相同，獲得實施例2～11及比較例2～7之模擬性的半導體模組。在實施例4中，將加壓成形之時的氛圍設為包含5體積%之氫氣的氮氣之氛圍。
[比較例1]
以Cu：50質量%、Sn：50質量%之比例混合平均粒徑10μm之Sn粉末，和平均粒徑10μm之Cu粉末而製作出混合粉末。將RMA助焊劑以助焊劑之比例成為13質量%之方式混合至該混合粉末而調製膏體。以下，與實施例1相同，獲得半導體元件被接合於科伐合金基板之模擬性的半導體模組。於表1表示對比較例1之熱壓成形前之膏體條件和模擬性的半導體模組進行熱壓成形的條件。
[比較評估]
針對實施例1～11及比較例1～7之18種類的模擬性的半導體模組，以接著敘述的方法測定(1)半導體模組之接合層的厚度，和(2)該接合層之Cu和Sn之組成比(質量比)。再者，以接著敘述的方法進行(3)冷熱衝擊試驗。將該些結果表示於表2。
(1)半導體模組之接合層的厚度
使用光學顯微鏡(KEYENCE公司製，型號VHX-1000)，以倍率150倍在5處進行觀察，以平均值求出接合層之厚度。
(2)接合層之Cu和Sn之組成比(質量比)
藉由掃描型電子顯微鏡-能量-分散型X射線分析法(SEM-EDX)求出接合層之Cu和Sn之組成比(質量比)。
(3)冷熱衝擊試驗
使用冷熱衝擊試驗機(ESPEC公司製TSB-51)，在液相(Fluorinert)，對以接合層被接合的科伐合金基板及半導體晶片元件所構成的模擬性的半導體模組，實施2000次5分鐘在-40℃，5分鐘在200℃的冷熱循環。在該冷熱衝擊試驗之後，依據記載於JIS Z 3198-7之無鉛焊料試驗方法-第7部之「在晶片零件的焊料接合之剪切強度測方法」，在室溫分別進行測定18種類之模擬性的半導體模組的剪切強度。將其結果表示於表2。若剪切強度為40MPa以上時視為「優」，若為20MPa～40MPa時視為視為「良」，若為10MPa～20MPa時視為視為「可」，若為未滿10MPa時視為「不可」。
當從表2比較實施例1～11和比較例1～7時，可知下述情事。可知在被構成從接合層之中心部至上述電子零件之端部的接合部，Sn之組成組合增加的接合層中，在實施例1、2、3、8、10中，任一者的冷熱衝擊試驗後之剪切強度皆成為20MPa以上，被維持良好的接合狀態。再者，在實施例4、5、6、7、9、11中，任一者的冷熱衝擊試驗後之剪切強度階成為10～20MPa以上。雖然仍維持接合，但表示比較低的強度，確認出在接合層之厚度或Sn之組成比例，存在較佳的範圍。
另外，從接合層之中心部至端部之接合部，與實施例1～11進行比較，在Sn之組成比例變化不大的比較例1中，剪切強度下降至10MPa以下。此應該係因為Sn之組成比例變化不大，故在熱衝擊試驗中，從施加於接合層之應力發生的裂紋進展，而產生接合層的剝離之故。再者，即使在比起比較例1，Sn之組成比例增加的比較例2～7中，剪切強度也下降至10MPa以下。此應該係加壓不足所致的接合層和基板、與元件的密接性不足(比較例2)、過剩的壓力所致的基板、元件之部分性破壞(比較例3)、低溫所致的Sn液相之生成不足引起的密接性不足(比較例4)、從高溫冷卻至室溫之時的各構件之熱膨脹差所致的過剩應力變形引起的部分性破壞(比較例5)、藉由加熱不足，Sn-Cu互相擴散所致的金屬間化合物生成不足(比較例6)、過加熱所致的Sn-Cu互相擴散引起的科肯德爾孔隙(Kirkendall void)之生成(比較例7)等之故。

產業上之利用可行性
本發明可以利用於在基板接合被曝露於高溫氛圍的電子零件而構成，並且重複冷熱的半導體模組。
1‧‧‧半導體模組
3‧‧‧接合層
4‧‧‧半導體晶片元件
5‧‧‧基板
10‧‧‧半導體模組
11‧‧‧Cu核Sn殼粉末
11a‧‧‧核(中心核)
11b‧‧‧殼(外殼)
12a‧‧‧膏體
12b‧‧‧接合層前軀體
13‧‧‧接合層
13a‧‧‧中心部
13b‧‧‧接合部
13c‧‧‧接合部
14‧‧‧電子零件
14a‧‧‧端部
14b‧‧‧端部
15‧‧‧基板
圖1為本實施型態之半導體模組之製造工程中，使含有Cu核Sn殼粉末的膏體介於電子零件和基板之間的圖式。
圖2為本實施型態之半導體模組之製造工程中，對電子零件及/或基板進行熱壓成形圖式。
圖3為本實施型態之半導體模組之製造工程中，將對電子零件及/或基板進行熱壓成形之後的電子零件接合於基板之狀態的圖式。
圖4為在本實施型態之半導體模組之接合層產生裂紋之時的示意圖。
圖5為在以往之半導體模組之接合層產生裂紋之時的示意圖。

Claims (6)

  1. 一種半導體模組之接合層，其係介於電子零件和基板之間，藉由CuSn金屬間化合物被構成的半導體模組之接合層，其特徵在於， 被構成從上述接合層之中心部至上述電子零件之端部之接合部，Sn之組成比例增加。
  2. 如請求項1記載之半導體模組之接合層，其中 在上述接合層之中心部的Sn之組成比例為20質量%～50質量%，Cu之組成比例為其殘部，在上述電子零件之端部之接合部的Sn之組成比例為60質量%～80質量%，Cu之組成比例為其殘部。
  3. 如請求項1或2記載之半導體模組之接合層，其中 上述接合層之厚度為10μm～200μm。
  4. 一種半導體模組，使請求項1至3中之任一項記載之接合層介於電子零件和基板之間。
  5. 一種製造半導體模組之方法，使含有Cu核Sn殼粉末之膏體介於電子零件和基板之間，在該中介的狀態，於惰性氛圍或還原性氛圍下，對上述電子零件及/或上述基板施加1MPa～30MPa之壓力，並且以250℃～350℃之溫度加熱1分鐘～10分鐘期間，而將上述電子零件接合於上述基板，依此製造半導體模組。
  6. 如請求項5記載之半導體模組之製造方法，其中 上述Cu核Sn殼粉末係Sn之組成比例為40質量%～60質量%，Cu之組成比例為其殘部。
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