TW201924950A - 形成噴墨噴嘴腔室的方法 - Google Patents
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Abstract
一種用於形成噴墨腔室的方法,該噴墨腔室被界定在晶圓基板之正面表面中的孔上。該方法包含下列步驟: (i)層積一層乾膜光阻劑至該正面表面上; (ii)界定對應於複數腔室壁之複數壁開口在該乾膜光阻劑中, (iii)沉積腔室材料進入該等壁開口內且在該乾膜光阻劑上,以形成腔室頂部和複數腔室壁; (iv)界定噴嘴開口在該腔室頂部中;和 (v)移除該乾膜光阻劑,以形成該噴墨腔室在該孔的上方。
Description
本發明關於一種形成噴墨噴嘴腔室的方法,該方法主要被發展用於降低微機電系統(MEMS)製程的成本和複雜度,以形成高密度的噴墨噴嘴裝置。
如同例如WO 2011-143700, WO 2011-143699, 和WO 2009-089567中所描述,申請人已研發一系列的Memjet®噴墨印表機。該等專利申請案的內容併入本案供參考。Memjet®印表機使用靜止的頁寬列印頭結合饋給機構。該饋給機構以單次通過的方式饋給列印媒體通過列印頭。因此相較於習知的掃描噴墨印表機,Memjet®印表機提供的列印速率高很多。 為了使矽的量最小化,且因此使頁寬列印頭的成本降到最低,藉由整合(integrated)CMOS/MEMS(互補式金屬氧化物半導體/微機電系統)製程來製造每一Memjet®列印頭IC(積體電路),以提供高噴嘴封包密度。典型的Memjet®列印頭IC包含6,400個噴嘴裝置。在含有11個Memjet®列印頭IC的A4列印頭中,其轉變至70,400個噴嘴裝置。 US 7,246,886的內容併入本案供參考。如同US 7,246,886所述,用於Memjet®列印頭IC之典型的列印頭製造方法要求經由深反應離子蝕刻(DRIE)在CMOS晶圓的正面(frontside)表面內蝕刻以形成孔,用犧牲材料(例如光阻劑)填充該等孔,以提供平坦的正面表面,然後在晶圓的正面上建立MEMS噴嘴裝置。可例如經由附加的MEMS製程來界定噴嘴腔室的結構,其中腔室材料被沉積進入犧牲支架所界定的開口內(例如參見US 7,857,428所描述之附加MEMS製造方法,其內容併入本案供參考)。取代性地,噴嘴腔室的結構可由減去式MEMS方法來界定,其中腔室材料被沉積做為覆蓋層,然後被蝕刻,以界定周圍腔室壁(例如參見US 7,819,503所描述之減去式MEMS製造方法,其內容併入本案供參考)。在完成全部之正面MEMS製造步驟之後,從背面使晶圓變薄,從背面時刻出渠道,以碰到已填充的正面孔。最後,藉由氧化灰化(ashing)來移除正面孔和MEMS噴嘴腔室的全部犧牲材料,以提供晶圓背面和正面之間的流體性連接。在產出的列印頭IC中,正面孔界定用於噴嘴腔室的各別入口通道。 上述製造方法的關鍵步驟是以犧牲材料填塞正面的孔,且將晶圓的正面表面平坦化。如果正面沒有完全平坦,則任何平坦度的缺陷將經歷後續的MEMS製造步驟,最終可能導致瑕疵裝置、或因較短的安置壽命而弱化MEMS構造。典型地,以逐步的製程來執行孔的填充,以達成所要求的平坦度。US 7,923,379描述用於填塞藉由DRIE所形成之孔的一種製程。US 2016-0236930描述用於填塞藉由DRIE所形成之孔的另一種製程,該兩案的內容併入本案做為參考。 僅管如此,但是需要填充步驟和平坦化步驟兩者和移除用於填充孔的犧牲材料,所以填塞正面的孔會增加MEMS製程流程的成本和複雜度。 希望提供取代性的MEMS製程,用於在正面的孔上形成噴墨噴嘴腔室。相對於習知製程,本案的製程減少成本和複雜度。
在第一方面,提供了一種用於形成噴墨腔室的MEMS方法,該噴墨腔室被界定在晶圓基板之正面表面中的孔上。該方法包含下列步驟: (i)層積一層乾膜光阻劑至該正面表面上; (ii)界定對應於複數腔室壁之複數壁開口在該乾膜光阻劑中, (iii)沉積腔室材料進入該等壁開口內且在該乾膜光阻劑上,以形成腔室頂部和複數腔室壁; (iv)界定噴嘴開口在該腔室頂部中;和 (v)移除該乾膜光阻劑,以形成該噴墨腔室在該孔的上方。 相較於上述習知技藝的方法,本發明之第一方面的方法有利地消除前孔之填充和平坦化的步驟,藉此導致較短且較不昂貴的MEMS製程流程。再者,相較於已知的乾膜層積方法(例如佳能公司申請之US 4,558,333中所描述者),本發明之第一方面的方法是有利的,因為被沉積在乾膜光阻劑層上的腔室材料可為陶瓷材料(例如氧化矽),其可經由化學氣相沉積(CVD)製程來沉積。因此產出之列印頭(或列印頭晶片)的噴嘴板非常堅固,具有良好的硬度並可防止化學或機械劣化。 較佳地,腔室材料選自由氧化矽、氮化矽、和氮氧化矽所構成的群組。例如該領域所已知者,可經由四乙基正矽酸鹽(TEOS)的化學氣相沉積(CVD)來形成氧化矽腔室材料。 在一些實施例中,正面表面包含被連接的加熱器裝置,其在層積步驟之前被形成。 較佳地,該方法包含額外的MEMS製造步驟。例如從背面使晶圓變薄和/或從背面蝕刻出墨水供給通道連通該孔之後,形成腔室。 取決於噴墨腔室的特定設計,噴嘴開口可對齊該孔、或偏離該孔。在一實施例中,噴墨腔室包括具有該噴嘴開口的爆發腔室和具有該孔的前腔室,該爆發腔室在橫方向連接至該前腔室。典型地,該等腔室壁界定該噴墨腔室的周壁。 較佳地,該層乾膜光阻劑具有在5至30微米或5至15微米範圍內的厚度。 較佳地,使用該乾膜光阻劑的光學成像來界定該等壁開口。 較佳地,乾膜光阻劑是包括環氧樹脂的負阻劑。此等乾膜光阻劑的例子為該領域所熟知,且可從例如DJ微層積公司(DJ MicroLaminates, Inc)和工程材料系統公司(Engineered Materials System, Inc)購得。 較佳地,使用選自由四乙基正矽酸鹽化學氣相沉積(TEOS CVD)、高密度電漿化學氣相沉積(HDPCVD)、和電漿增強化學氣相沉積法(PECVD)所構成之群組的至少一沉積方法,來執行該沉積步驟(iii)。 該領域已知四乙基正矽酸鹽化學氣相沉積(TEOS CVD)適於填充渠道,尤其是在低壓時[例如參見Shareef et al., Subatmospheric chemical vapor deposition ozone/TEOS process for SiO2
trench filling, Journal of Vacuum Science &Technology B, Nanotechnology and Microelectronics: Material, Processing, Measurement, and Phenomena 13, 1888 (1995)]。同樣地,如同US 5,872,058所述,使用矽烷、氧、和氬的混合物,HDPCVD適於填充渠道。 在一些實施例中,化學材料的沉積是單一步驟製程,在該單一步驟中同時形成腔室壁和腔室頂部。在沉積之後,可使用CMP將腔室頂部平坦化。 在其它實施例中,沉積步驟(iii)包括下列子步驟: (a)使用第一沉積方法來沉積第一腔室材料,以填充該等壁開口並形成該等腔室壁; (b)將該第一腔室材料的上表面平坦化;和 (c)使用第二沉積方法將第二腔室材料沉積在該第一腔室材料之被平坦化的上表面上。 第一和第二腔室材料可彼此相同或不同。典型地,第一和第二腔室材料兩者都是氧化矽。 第一和第二沉積方法可彼此相同或不同。例如第一沉積方法可用TEOS CVD或HDPCVD,而第二沉積方法可例如用PECVD。 較佳地,使用化學-機械平坦化(CMP)來執行該平坦化。
圖1至圖6示意地顯示例示的MEMS製程流程,其用於形成第一方面的噴墨腔室70。雖然參考晶圓基板的一個單位晶胞來顯示該製程,但是應瞭解該製程可被用於在單一個晶圓基板上形成複數(通常是數千)個相同的單位晶包。如同該領域中已知者,在完成MEMS製程之後,晶圓通常被切成顆粒,以提供個別的列印頭晶片。 圖1所顯示的矽基板50具有形成在基板之正面表面54中的正面孔52。正面孔52通常具有至少10微米(例如10至50微米)的深度和大於1:1的深寬比。參考圖2,在第一步驟中,薄層之可光致成像的乾膜光阻劑56被層積至基板50的正面表面54上。層積製程可被以該領域中已知的方式最佳化,以使乾膜光阻劑56下陷進入正面孔52的量最小化。乾膜光阻劑56的層可具有5至15微米範圍的厚度。 請參考圖3,在第二步驟中,使用光學成像(光蝕刻)製程將壁開口58界定在乾膜光阻劑56內。乾膜光阻劑通常是負的阻劑乾膜,藉此膜的未曝光區域被光阻劑顯影劑溶解,以界定壁開口58。 請參考圖4,在第三步驟中,使用化學氣相沉積(CVD)製程來沉積腔室材料,以填充壁開口58,藉此形成一個腔室頂部60和複數腔室壁62。可例如使用四乙基正矽酸鹽(TEOS)沉積來填充壁開口58,使具有氧化矽腔室材料。在另一實施例中,可使用高密度電漿氧化物沉積來填充壁開口58,使具有氧化矽腔室材料。 在相對高溫的沉積步驟之前,可用熱和/或紫外線使乾膜光阻劑56熟化。當然也可使用其它適當的可沉積腔室材料(例如氮化矽)來形成腔室壁62和腔室頂部60。 腔室壁62和腔室頂部60可在單一個沉積步驟中一起成形。在另一實施例中,可經由初始的沉積填充壁開口58來形成腔室壁62,然後再使用化學-機械平坦化(CMP)的平坦化步驟。在CMP之後,可使用後續的沉積步驟來增加腔室頂部60的厚度至所欲的厚度。具有CMP的兩階段沉積製程有利地提供更平坦的頂部構造,此幫助在後續步驟中提供更受控制的噴嘴蝕刻,因此使任何不希望的噴嘴尺寸變化最小化。平坦的噴嘴板也有利於列印頭的刮擦(wiping)。 很顯然地,也可由相同或不同的材料且使用兩階段沉積製程來形成腔室壁62和腔室頂部60,以使噴墨腔室具有最佳特徵。同樣地,可使用相同或不同的沉積方法來執行第一和第二沉積步驟,以使噴墨腔室的特徵最佳化。 如圖5所示,由於腔室頂部60和腔室壁62的形成,噴嘴開口66在第四步驟期間被界定在腔室頂部中。如同該領域所已知者,使用習知的光微影遮罩和蝕刻步驟,來形成噴嘴開口66。 最後,在圖6所示的第五步驟中,例如藉由氧化灰化的製程來移除乾膜光阻劑56,以形成位於正面孔52上方的噴墨腔室70。因此,在本文所描述之新穎的MEMS製程流程中,乾膜光阻劑56被用作犧牲支架,用於經由沉積陶瓷材料來形成腔室頂部60和腔室壁62。以此方式,不需填充和平坦化正面孔,就可使用陶瓷材料在正面孔52的上方形成非常堅固的噴墨腔室70。再者,任何被侷限在凹部內之未灰化乾膜光阻劑56,對於橫跨兩個腔室頂部60之間的噴嘴板68提供額外的剛性和支撐。 雖然當然可瞭解,取決於噴墨噴嘴裝置的特殊組態,噴嘴開口和正面孔可彼此偏置。但是在圖6中,噴嘴開口66對齊正面孔52。 在完成正面的MEMS製造步驟之後,晶圓基板50通常被從背面變薄,且從背面蝕刻出墨水供給通道(未示),以連通正面孔52。藉此提供晶圓基板的背面和正面之間的流體連接。 MEMS噴墨噴嘴裝置 為了完整性,現在將描述可使用上述MEMS製程製造的噴墨噴嘴裝置10。 參考圖7和圖8,其顯示噴墨噴嘴裝置10包含主腔室12。主腔室12具有底板14、頂板16、和在底板及頂板之間延伸的周壁18。圖7顯示互補式金屬氧化物半導體(CMOS)層20,其可包括以中間層介電(ILD)層散置其間的複數金屬層。 在圖7中,頂板16被顯示為透明層,以顯露每一噴嘴裝置10的細節。頂板16和周壁18通常由陶瓷材料構成,例如二氧化矽或氮化矽。 噴嘴裝置10的主腔室12包含爆發腔室22和前腔室24。爆發腔室22包括被界定在頂板16中的噴嘴孔26、和呈阻抗式加熱器元件28且被連接至底板14的致動器。前腔室24包括被界定在底板14中的主腔室入口30(或底板入口30)。主腔室入口30碰到前腔室24之端壁18b且和端壁18b局部重疊。此配置使前腔室24的毛細管作用最佳化,藉以激勵灌注並使腔室再填充率最佳化。 緩衝板32分隔主腔室12,以界定爆發腔室22和前腔室24。緩衝板32在底板14和頂板16之間延伸。 前腔室24和爆發室22經由一對爆發室入口34而流體式連通,該對爆發室入口34經過緩衝板32的兩側。藉由在緩衝板32之每一側邊緣和周壁18之間延伸的間隙來定義每一爆發室入口34。 噴嘴孔26是修長的,且呈具有和加熱器元件之中央縱長軸線對齊之主軸的橢圓形。 圖8做最佳地顯示,加熱器元件28的每一端被連接至各電極36。電極36藉由一或更多導孔37穿過主腔室12的底板14而暴露。電極36通常由CMOS層20的上金屬層所界定。加熱器元件28可例如由鈦鋁合金、氮化鈦鋁等所構成。在一實施例中,如同該領域中所已知者,可用一或更多保護層塗覆加熱器28。 可用任何適當的傳導性材料(例如銅、鎢等)來充滿導孔37,以提供加熱器元件28和電極36之間的電連接。US 8,453,329描述了用於形成從加熱器元件28至電極36之電極連接的適當製程,US 8,453,329的內容併入本文作為參考。 每一電極36的部份可分別被直接定位在端壁18a和緩衝板32的下方。此配置有利地改善裝置10的整體對稱性,且使加熱器元件28從底板14剝離的風險最小化。 雖然為了清晰起見,圖7之列印頭晶片100的局部切除視圖中只顯示兩個噴墨噴嘴裝置10,但是列印頭晶片100可包含複數噴墨噴嘴裝置10。藉由列印頭基板102來界定列印頭晶片100,其具有鈍態CMOS層20和含有噴墨噴嘴裝置10的MEMS層。如圖7所示,每一主要腔室入口30連通被界定在列印頭晶片100之背面的墨水供給通道104。墨水供給通道104比主腔室入口30寬很多,且提供大量的墨水供給,用於使和其成流體連通每一主腔室12水合(hydrating)。每一墨水供給通道104和設置在列印頭晶片100之正面的一或多列噴嘴裝置10平行延伸。依據US 7,441,865之圖21B所示的配置,通常每一墨水供給通道104供給墨水至一組噴嘴列(為了清晰起見,圖7只顯示一列)。US 7,441,865的內容併入本文作為參考。 如同上文所預示者,可藉由使用基於圖1至圖6所描述之製程而修正的MEMS製程流程,在晶圓基板上建立含有噴墨噴嘴裝置10的MEMS層,來製造列印頭晶片100。在修正的MEMS製程流程中,藉由填充被界定在乾膜光阻劑56內的適當緩衝開口(未示),來使緩衝板32和腔室壁62及腔室頂部60同時成形。因此,相較於先前技藝的製程,本文所描述之在正面孔上方形成陶瓷噴墨腔室的製程提供另一種替代方案,其消除填充和平坦化步驟,且藉此降低製造列印頭晶片的總成本。 當然應該瞭解,本發明只以範例的方式進行描述,且可在本發明所附請求項所界定的範圍內做細節的修正。
10‧‧‧噴墨噴嘴裝置
12‧‧‧主腔室
14‧‧‧底板
16‧‧‧頂板
18‧‧‧周壁
18a‧‧‧端壁
18b‧‧‧端壁
20‧‧‧互補式金屬氧化物半導體層
22‧‧‧爆發腔室
24‧‧‧前腔室
26‧‧‧噴嘴孔
28‧‧‧加熱器元件
30‧‧‧主腔室入口
32‧‧‧緩衝板
34‧‧‧爆發室入口
50‧‧‧矽基板
52‧‧‧正面孔
54‧‧‧正面表面
56‧‧‧乾膜光阻劑
58‧‧‧壁開口
60‧‧‧腔室頂部
62‧‧‧腔室壁
66‧‧‧噴嘴開口
68‧‧‧噴嘴板
70‧‧‧噴墨腔室
100‧‧‧列印頭晶片
102‧‧‧列印頭基板
104‧‧‧墨水供給通道
現在將參考附圖且只以範例的方式來描述本發明的實施例。附圖如下: 圖1是具有蝕刻在正面表面中之孔的矽基板的示意側視圖; 圖2顯示圖1之基板在層積乾膜層之後; 圖3顯示圖2之基板在光蝕刻乾膜層之後; 圖4顯示圖3之基板在沉積腔室材料之後; 圖5顯示圖4之基板在蝕刻腔室材料之後; 圖6顯示圖5之基板在氧化移除乾膜層之後; 圖7是適合經由圖1至圖6所示之MEMS製程流程成形之噴墨噴嘴裝置的透視圖; 圖8是圖7所示之噴墨噴嘴裝置的剖面側視圖。
Claims (20)
- 一種用於形成噴墨腔室的方法,該噴墨腔室被界定在晶圓基板之正面表面中的孔上,該方法包含下列步驟: (i)層積一層乾膜光阻劑至該正面表面上; (ii)界定對應於複數腔室壁之複數壁開口在該乾膜光阻劑中, (iii)沉積腔室材料進入該等壁開口內且在該乾膜光阻劑上,以形成腔室頂部和複數腔室壁; (iv)界定噴嘴開口在該腔室頂部中;和 (v)移除該乾膜光阻劑,以形成該噴墨腔室在該孔上。
- 如申請專利範圍第1項之用於形成噴墨腔室的方法,其中該正面表面包含被連接的加熱器裝置。
- 如申請專利範圍第1項之用於形成噴墨腔室的方法,另外包含額外的MEMS製造步驟。
- 如申請專利範圍第3項之用於形成噴墨腔室的方法,其中藉由該孔來界定用於該噴墨腔室的各別入口。
- 如申請專利範圍第4項之用於形成噴墨腔室的方法,另外包含下列的至少一者:從背面使晶圓變薄、和從背面蝕刻出複數墨水供給通道。
- 如申請專利範圍第5項之用於形成噴墨腔室的方法,其中該方法形成複數噴墨腔室,且每一墨水供給通道連通一或更多該孔。
- 如申請專利範圍第6項之用於形成噴墨腔室的方法,其中每一墨水供給通道比每一孔還相對地寬。
- 如申請專利範圍第1項之用於形成噴墨腔室的方法,其中該噴嘴開口對齊該孔、或偏離該孔。
- 如申請專利範圍第1項之用於形成噴墨腔室的方法,其中該噴墨腔室包括具有該噴嘴開口的爆發腔室和具有該孔的前腔室,該爆發腔室在橫方向連接至該前腔室。
- 如申請專利範圍第9項之用於形成噴墨腔室的方法,其中該等腔室壁界定該噴墨腔室的周壁。
- 如申請專利範圍第1項之用於形成噴墨腔室的方法,其中該腔室材料選自由氧化矽、氮化矽、和氮氧化矽所構成的群組。
- 如申請專利範圍第1項之用於形成噴墨腔室的方法,其中該層乾膜光阻劑具有在5至20微米範圍內的厚度。
- 如申請專利範圍第1項之用於形成噴墨腔室的方法,其中使用該乾膜光阻劑的光學成像來界定該等壁開口。
- 如申請專利範圍第1項之用於形成噴墨腔室的方法,其中該乾膜光阻劑包括環氧樹脂。
- 如申請專利範圍第1項之用於形成噴墨腔室的方法,其中使用選自由四乙基正矽酸鹽化學氣相沉積(TEOS CVD)、高密度電漿化學氣相沉積(HDPCVD)、和電漿增強化學氣相沉積法(PECVD)所構成之群組的至少一沉積方法,來執行該沉積步驟(iii)。
- 如申請專利範圍第15項之用於形成噴墨腔室的方法,其中該沉積步驟(iii)包括下列子步驟: (a)使用第一沉積方法來沉積第一腔室材料,以填充該等壁開口,藉此形成該等腔室壁和至少局部形成該腔室頂部;和 (b)將該第一腔室材料的上表面平坦化。
- 如申請專利範圍第16項之用於形成噴墨腔室的方法,另外包括下列子步驟: (c)使用第二沉積方法將第二腔室材料沉積在該第一腔室材料之被平坦化的該上表面上,以完成該腔室頂部的形成。
- 如申請專利範圍第17項之用於形成噴墨腔室的方法,其中該第一和第二腔室材料彼此相同或不同。
- 如申請專利範圍第17項之用於形成噴墨腔室的方法,其中該第一和第二沉積方法彼此相同或不同。
- 如申請專利範圍第16項之用於形成噴墨腔室的方法,其中使用化學-機械平坦化(CMP)來執行該平坦化。
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