TW201914032A - 半導體裝置及方法 - Google Patents
半導體裝置及方法 Download PDFInfo
- Publication number
- TW201914032A TW201914032A TW107113068A TW107113068A TW201914032A TW 201914032 A TW201914032 A TW 201914032A TW 107113068 A TW107113068 A TW 107113068A TW 107113068 A TW107113068 A TW 107113068A TW 201914032 A TW201914032 A TW 201914032A
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor layer
- layer
- region
- silicon
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 414
- 238000000034 method Methods 0.000 title claims description 182
- 239000000463 material Substances 0.000 claims abstract description 188
- 239000002070 nanowire Substances 0.000 claims abstract description 76
- 125000006850 spacer group Chemical group 0.000 claims abstract description 69
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 239000003989 dielectric material Substances 0.000 claims abstract description 26
- 230000008569 process Effects 0.000 claims description 141
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 57
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical group [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 57
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 56
- 229910052710 silicon Inorganic materials 0.000 claims description 56
- 239000010703 silicon Substances 0.000 claims description 56
- 238000001039 wet etching Methods 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 393
- 229920002120 photoresistant polymer Polymers 0.000 description 35
- 229910052751 metal Inorganic materials 0.000 description 29
- 239000002184 metal Substances 0.000 description 29
- 230000015572 biosynthetic process Effects 0.000 description 26
- 238000005530 etching Methods 0.000 description 26
- 238000005229 chemical vapour deposition Methods 0.000 description 18
- 238000000231 atomic layer deposition Methods 0.000 description 11
- 238000011049 filling Methods 0.000 description 11
- 238000000151 deposition Methods 0.000 description 10
- 239000002019 doping agent Substances 0.000 description 10
- 238000005137 deposition process Methods 0.000 description 9
- 238000000059 patterning Methods 0.000 description 9
- 230000001681 protective effect Effects 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000004380 ashing Methods 0.000 description 7
- 238000001020 plasma etching Methods 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 229910052721 tungsten Inorganic materials 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- -1 InAlAs Inorganic materials 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 229910052726 zirconium Inorganic materials 0.000 description 6
- 229910010037 TiAlN Inorganic materials 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 230000000873 masking effect Effects 0.000 description 5
- 230000006911 nucleation Effects 0.000 description 5
- 238000010899 nucleation Methods 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- 229910052718 tin Inorganic materials 0.000 description 5
- ITWBWJFEJCHKSN-UHFFFAOYSA-N 1,4,7-triazonane Chemical compound C1CNCCNCCN1 ITWBWJFEJCHKSN-UHFFFAOYSA-N 0.000 description 4
- 229910004200 TaSiN Inorganic materials 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 229910052748 manganese Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 3
- 229910004166 TaN Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229910003468 tantalcarbide Inorganic materials 0.000 description 3
- 238000005979 thermal decomposition reaction Methods 0.000 description 3
- 229910016570 AlCu Inorganic materials 0.000 description 2
- 229910017115 AlSb Inorganic materials 0.000 description 2
- 229910005542 GaSb Inorganic materials 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910010038 TiAl Inorganic materials 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 150000004645 aluminates Chemical class 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052914 metal silicate Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 229910000314 transition metal oxide Inorganic materials 0.000 description 2
- 229910000326 transition metal silicate Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910019001 CoSi Inorganic materials 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- 229910005883 NiSi Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02603—Nanowires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823412—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
- H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
- H01L29/42392—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor fully surrounding the channel, e.g. gate-all-around
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66439—Unipolar field-effect transistors with a one- or zero-dimensional channel, e.g. quantum wire FET, in-plane gate transistor [IPG], single electron transistor [SET], striped channel transistor, Coulomb blockade transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7848—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the source/drain region, e.g. SiGe source and drain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/78654—Monocrystalline silicon transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823456—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different shapes, lengths or dimensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
根據本發明的一些實施例,在一基板之一第一區及一第二區中形成奈米線裝置及鰭式裝置。為形成該等裝置,形成一第一材料及一第二材料之交替層,形成鄰近於該第一材料之該等層處之內間隔件,且接著移除該第一材料之該等層以形成奈米線而不移除該第二區內之該第一材料之該等層。在該第一區及該第二區內形成閘極介電質及閘極電極之閘極結構以便在該第一區中形成該等奈米線裝置且在該第二區中形成該等鰭式裝置。
Description
本發明實施例係關於半導體裝置及方法。
半導體裝置用於各種電子應用中,諸如(舉例而言)個人電腦、手機、數位相機及其他電子設備。通常藉由以下製造半導體裝置:將材料之絕緣或介電質層、導電層及半導體層循序沉積於一半導體基板上方;及使用微影圖案化各個材料層以在其上形成電路組件及元件。 半導體產業繼續藉由最小構件大小之持續減小而改良各種電子組件(例如,電晶體、二極體、電阻器、電容器等)之整合密度,此允許更多組件整合至一給定區域中。然而,隨著最小構件大小減小,出現應解決之額外問題。
本發明的一實施例係關於一種製造一半導體裝置之方法,該方法包括:在一半導體基板之一第一區及一第二區兩者上方形成一第一半導體層,該第一半導體層包括一第一材料;在該第一區及該第二區上方形成一第二半導體層;從該第一區上方移除該第一半導體層以由該第二半導體層形成一奈米線通道,其中該從該第一區上方移除該第一半導體層未從該第二區上方移除該第一半導體層;及在該奈米線通道周圍形成一第一閘極電極;及在該第二區中之該第一半導體層及該第二半導體層上方形成一第二閘極電極。 本發明的一實施例係關於一種製造一半導體裝置之方法,該方法包括:在一矽基板上方形成鍺化矽之一第一層;在鍺化矽之該第一層上方形成矽之一第一層;圖案化通過鍺化矽之該第一層及矽之該第一層之一開口以將鍺化矽之該第一層分離成一第一區及一第二區;在該圖案化通過鍺化矽之該第一層之該開口之後在鍺化矽之該第一層內形成一第一凹槽;用一介電材料填充該第一凹槽;移除鍺化矽之該第一層之該第一區而不移除鍺化矽之該第一層之該第二區;及同時在矽之該第一層之該第一區周圍形成一第一介電材料且在鍺化矽之該第一層之該第二區及矽之該第一層兩者上方形成一第二介電材料。 本發明的一實施例係關於一種半導體裝置,其包括:一半導體基板,其具有一核心區及一輸出/輸入(I/O)區;一第一奈米線,其在定位於該核心區內之一第二奈米線上方;一第一內間隔件,其將該第一奈米線與該第二奈米線分離;一閘極材料,其定位於該第一奈米線與該第二奈米線之間;一通道,其定位於該I/O區內,其中該通道包括:一第一材料,其定位於具有該第一奈米線之一第一平面中,其中該第一奈米線包括該第一材料;及一第二材料,其定位於具有該閘極材料之一第二平面中,該第一平面與該第二平面平行,該第二材料不同於該第一材料。
以下揭露提供用於實施本發明實施例之不同構件之許多不同實施例或實例。下文描述組件及配置之特定實例以簡化本揭露。當然,此等僅為實例且非意欲限制。舉例而言,在以下描述中之一第一構件形成於一第二構件上方或上可包含其中該第一構件及該第二構件經形成直接接觸之實施例,且亦可包含其中額外構件可形成在該第一構件與該第二構件之間,使得該第一構件及該第二構件可不直接接觸之實施例。另外,本揭露可在各個實例中重複參考數字及/或字母。此重複出於簡化及清楚之目的且本身不指示所論述之各個實施例及/或組態之間之一關係。 此外,為便於描述,諸如「在…下面」、「在…下方」、「下」、「在…上方」、「上」及類似者之空間相對術語可在本文中用於描述一個元件或構件與另一(些)元件或構件之關係,如圖中圖解說明。空間相對術語意欲涵蓋除在圖中描繪之定向以外之使用或操作中之裝置之不同定向。設備可以其他方式定向(旋轉90度或按其他定向)且因此可同樣解釋本文中使用之空間相對描述符。 現將關於在積體電路之設計及操作中使用之短通道水平環繞式閘極奈米線電晶體及長通道非奈米線鰭式電晶體之整合來描述實施例。此等實施例幫助避免長通道裝置歸因於與填充有限空間相關聯之問題的效能降級。然而,實施例可以廣泛多種方式利用,且不意欲限於本文中描述之實施例。 現參考圖1,圖解說明一實施例,其中在一半導體基板101上方形成一第一半導體層103、一第二半導體層105、一第三半導體層107、一第四半導體層109、一第五半導體層111、一第六半導體層113、一第七半導體層115及一第八半導體層117。在一實施例中,半導體基板101可係(舉例而言)矽基板、鍺化矽基板、鍺基板、Ⅲ-Ⅴ族材料基板,或由具有(舉例而言)高帶間穿隧(BTBT)之其他半導體材料形成之一基板。在一些實施例中,半導體基板101係一塊體基板。在另一實施例中,半導體基板101可係一絕緣體上覆半導體(SOI)基板。 在一實施例中,半導體基板101具有該半導體基板101內之若干不同區。舉例而言,在一項實施例中,半導體基板101具有一核心區102及一I/O區104。在核心區102內,將形成一第一裝置106及一第二裝置108使得該第一裝置106具有與該第二裝置108相反之一導電性。舉例而言,在一項實施例中,第一裝置106可係一n型裝置而第二裝置108可係一p型裝置。然而,可利用裝置之任何適合組合。 另外,在I/O區104中,可形成一第三裝置110。在一實施例中,第三裝置110可係經形成以具有類似於第一裝置106之一導電性之一finFET裝置。舉例而言,第三裝置110可係一n型finFET,而在其他實施例中,第三裝置110可係一p型finFET或第三裝置110可表示一n型裝置及一p型裝置兩者。可利用裝置之任何適合組合,且全部此等組合完全意欲包含在實施例之範疇內。此外,雖然第一裝置106、第二裝置108及第三裝置110在此製造階段描述為「裝置」,但此不意欲暗示此等裝置係完成裝置,而係暗示經識別裝置內之結構將用來形成最終完成裝置。 在核心區及I/O區104兩者中,於半導體基板101上方形成第一半導體層103。在一實施例中,第一半導體層103係由一半導體材料形成,該半導體材料可與半導體基板101一起工作以幫助形成一鰭狀物122或第一奈米線901及第二奈米線1001 (圖1A中未圖解說明,但下文中關於圖9及圖10進一步圖解說明及描述)。舉例而言,第一半導體層103可由鍺化矽(Six
Ge1-x
,其中x係在從約0.01至約0.99之範圍中)、矽、碳化矽、純或實質上純鍺、Ⅲ-Ⅴ族化合物半導體、Ⅱ-Ⅵ族化合物半導體或類似者形成。舉例而言,用於形成Ⅲ-Ⅴ族化合物半導體之可用材料包含(但不限於) InAs、AlAs、GaAs、InP、GaN、InGaAs、InAlAs、GaSb、AlSb、AlP、GaP及類似者。 然而,為幫助形成第一奈米線901及第二奈米線1001,第一半導體層103係與具有一不同蝕刻選擇性之半導體基板101不同的一材料。舉例而言,在其中半導體基板101係矽之一實施例中,第一半導體層103係由除矽以外之一材料(諸如鍺化矽、碳化矽、砷化鎵、砷化銦鎵、Ⅲ-Ⅴ族化合物半導體、Ⅱ-Ⅵ族化合物半導體或類似者)形成。然而,可利用任何適合組合。 可使用諸如磊晶生長之一生長製程來形成第一半導體層103。舉例而言,在一項實施例中,第一半導體層103之材料可由半導體基板101之暴露材料生長。生長製程可繼續,直至第一半導體層103具有介於約5 nm與約15 nm之間之一第一厚度T1
。然而,可利用任何適合形成製程及厚度。 一旦第一半導體層103已形成在半導體基板101上方,便可在第一半導體層103上方形成第二半導體層105。在一實施例中,第二半導體層105係由一半導體材料形成,該半導體材料可與第一半導體層103及半導體基板101一起工作以幫助形成鰭狀物122或第一奈米線901及第二奈米線1001。舉例而言,第二半導體層105可由矽、鍺化矽(Six
Ge1-x
,其中x係在從約0.01至約0.99之範圍中)、碳化矽、純或實質上純鍺、Ⅲ-Ⅴ族化合物半導體、Ⅱ-Ⅵ族化合物半導體或類似者形成。舉例而言,用於形成Ⅲ-Ⅴ族化合物半導體之可用材料包含(但不限於) InAs、AlAs、GaAs、InP、GaN、InGaAs、InAlAs、GaSb、AlSb、AlP、GaP及類似者。 然而,為幫助形成第一奈米線901及第二奈米線1001,第二半導體層105係與具有一不同蝕刻選擇性之第一半導體層103不同的一材料。舉例而言,在其中第一半導體層103係鍺化矽之一實施例中,第二半導體層105係由與半導體基板101相同之材料形成,諸如矽。然而,第二半導體層105亦可由不同於第一半導體層103及半導體基板101兩者之一材料形成,且可利用任何適合組合。 可使用諸如磊晶生長之一生長製程來形成第二半導體層105。舉例而言,在一項實施例中,第二半導體層105之材料可由第一半導體層103之暴露材料生長。生長製程可繼續,直至第二半導體層105具有介於約5 nm與約15 nm之間(諸如約10 nm)之一第二厚度T2
。然而,可利用任何適合形成製程及厚度。 可使用類似於第一半導體層103之一材料及製程在第二半導體層105上形成第三半導體層107。舉例而言,第三半導體層107可係使用一磊晶生長製程形成至介於約5 nm與約15 nm之間之一厚度之一材料(諸如鍺化矽)。然而,可利用任何適合製程、材料及厚度。 可使用類似於第二半導體層105之一材料及製程在第三半導體層107上形成第四半導體層109。舉例而言,第四半導體層109可係使用一磊晶生長製程形成至介於約5 nm與約15 nm之間之一厚度之一材料(諸如矽)。然而,可利用任何適合製程、材料及厚度。 可使用類似於第一半導體層103之一材料及製程在第四半導體層109上形成第五半導體層111。舉例而言,第五半導體層111可係使用一磊晶生長製程形成至介於約5 nm與約15 nm之間之一厚度之一材料(諸如鍺化矽)。然而,可利用任何適合製程、材料及厚度。 可使用類似於第二半導體層105之一材料及製程在第五半導體層111上形成第六半導體層113。舉例而言,第六半導體層113可係使用一磊晶生長製程形成至介於約5 nm與約15 nm之間之一厚度之一材料(諸如矽)。然而,可利用任何適合製程、材料及厚度。 可使用類似於第一半導體層103之一材料及製程在第六半導體層113上形成第七半導體層115。舉例而言,第七半導體層115可係使用一磊晶生長製程形成至介於約5 nm與約15 nm之間之一厚度之一材料(諸如鍺化矽)。然而,可利用任何適合製程、材料及厚度。 可使用類似於第二半導體層105之一材料及製程在第七半導體層115上形成第八半導體層117。舉例而言,第八半導體層117可係使用一磊晶生長製程形成至介於約5 nm與約15 nm之間之一厚度之一材料(諸如矽)。然而,可利用任何適合製程、材料及厚度。 藉由在半導體基板101上方形成第一半導體層103、第二半導體層105、第三半導體層107、第四半導體層109、第五半導體層111、第六半導體層113、第七半導體層115及第八半導體層117,形成半導體材料之交替層,其中一第一材料(例如,矽)之層形成在一第二材料(例如,鍺化矽)之層之間。半導體材料之此一堆疊可用於在I/O區104內形成一鰭狀物122且亦可用於在核心區102內形成第一奈米線901及第二奈米線1001。 一旦第一半導體層103、第二半導體層105、第三半導體層107、第四半導體層109、第五半導體層111、第六半導體層113、第七半導體層115及第八半導體層117已形成在半導體基板101上方,便圖案化第一半導體層103、第二半導體層105、第三半導體層107、第四半導體層109、第五半導體層111、第六半導體層113、第七半導體層115及第八半導體層117以及半導體基板101之各者以形成鰭狀物122。在一實施例中,可藉由將一第二光阻劑(圖1A中未個別地圖解說明)塗覆於第八半導體層117上方而圖案化層。接著,圖案化且顯影第二光阻劑以在第八半導體層117上方形成一遮罩,且接著在一蝕刻製程(諸如一各向異性蝕刻製程)期間使用該遮罩以將第二光阻劑之圖案轉印至下伏層且形成鰭狀物122。 在形成鰭狀物122之後,可形成第一隔離區135。在一實施例中,第一隔離區135可係藉由沉積一介電材料(諸如氧化物材料、一高密度電漿(HDP)氧化物或類似者)形成之淺溝槽隔離區。在一選用清潔及加襯裡之後,可使用一化學氣相沉積(CVD)方法(例如,HARP製程)、一高密度電漿CVD方法或其他適合形成方法來形成介電材料。 另外,可沉積介電材料以用該介電材料填充且過填充鰭狀物122之間之空間且接著透過一適合製程(諸如化學機械拋光(CMP)、蝕刻、此等之一組合或類似者)移除過量材料。在一實施例中,移除製程亦移除定位於鰭狀物122上方之任何介電材料,使得介電材料之移除將使鰭狀物122之表面暴露於進一步處理步驟。 一旦已沉積介電材料,接著便可使該介電材料凹陷遠離鰭狀物122之表面。可執行凹陷以暴露鄰近鰭狀物122之頂部表面之鰭狀物122之側壁之至少一部分。可使用一濕式蝕刻藉由將鰭狀物122之頂部表面浸漬至對於介電材料之材料具有選擇性之一蝕刻劑中而使介電材料凹陷,但是可使用其他方法,諸如一反應性離子蝕刻、一乾式蝕刻、化學氧化物移除或乾式化學清潔。 然而,如一般技術者將認知,上文中描述之步驟可僅係用於填充介電材料且使介電材料凹陷之整個製程流程之部分。舉例而言,亦可利用加襯裡步驟、清潔步驟、退火步驟、間隙填充步驟、此等之組合及類似者來形成介電材料。全部潛在處理步驟完全意欲包含在本發明實施例之範疇內。另外,第一隔離區135之形成可在製程內之其他點執行,諸如藉由在第一半導體層103之形成之前執行。全部此等步驟及時間完全意欲包含在實施例之範疇內。 圖1A亦圖解說明在第八半導體層117上方形成一虛設閘極介電質119及一虛設閘極電極121。在一實施例中,可藉由熱氧化、化學氣相沉積、濺鍍或此項技術中已知且使用以形成一閘極介電質之任何其他方法形成虛設閘極介電質119。取決於閘極介電質形成之技術,頂部上之虛設閘極介電質119厚度可不同於側壁上之虛設介電質厚度。 虛設閘極介電質119可包括具有在約3埃至約100埃之範圍中(諸如約10埃)之一厚度之一材料,諸如二氧化矽或氮氧化矽。虛設閘極介電質119可由具有約0.5埃至約100埃(諸如約10埃或更小)之一等效氧化物厚度之一高介電常數(高k)材料(例如,具有大於約5之一相對介電常數)形成,諸如氧化鑭(La2
O3
)、氧化鋁(Al2
O3
)、氧化鉿(HfO2
)、氮氧化鉿(HfON)或氧化鋯(ZrO2
)或其組合。另外,二氧化矽、氮氧化矽及/或高k材料之任何組合亦可用於虛設閘極介電質119。 虛設閘極電極121可包括一導電材料且可選自包括多晶矽、W、Al、Cu、AlCu、W、Ti、TiAlN、TaC、TaCN、TaSiN、Mn、Zr、TiN、Ta、TaN、Co、Ni、此等之組合或類似者之群組。虛設閘極電極121可藉由化學氣相沉積(CVD)、濺鍍沉積或此項技術中已知且使用以沉積導電材料之其他技術沉積。虛設閘極電極121之厚度可在約5 Ǻ至約500 Ǻ之範圍中。虛設閘極電極121之頂部表面可具有一非平坦頂部表面,且可在虛設閘極電極121之圖案化或閘極蝕刻之前平坦化。此時可或可不將離子引入至虛設閘極電極121中。舉例而言可藉由離子植入技術引入離子。 一旦已形成虛設閘極介電質119及虛設閘極電極121,便可圖案化虛設閘極介電質119及虛設閘極電極121。在一實施例中,可藉由最初形成一第一硬遮罩123及該第一硬遮罩123上方之一第二硬遮罩125而執行圖案化。第一硬遮罩123包括一介電材料,諸如氧化矽、氮化矽、氮化鈦、氮氧化矽、此等之組合或類似者。可使用諸如化學氣相沉積、電漿輔助化學氣相沉積、原子層沉積或類似者之一製程來形成第一硬遮罩123。然而,可利用任何其他適合材料及形成方法。第一硬遮罩123可形成為介於約20 Å與約3000 Å之間之一厚度,諸如約20 Å。 第二硬遮罩125包括一不同介電材料,諸如氮化矽、氧化矽、氮化鈦、氮氧化矽、此等之組合或類似者。可使用諸如化學氣相沉積、電漿輔助化學氣相沉積、原子層沉積或類似者之一製程來形成第二硬遮罩125。然而,可利用任何其他適合材料及形成方法。第二硬遮罩125可形成至介於約20 Å與約3000 Å之間之一厚度,諸如約20 Å。 一旦已形成第一硬遮罩123及第二硬遮罩125,便可圖案化第一硬遮罩123及第二硬遮罩125。在一實施例中,可藉由最初將一第一光阻劑(未個別地圖解說明)放置於第一硬遮罩123及第二硬遮罩125上方且使第一光阻劑暴露於一圖案化能量源(例如,光)以便起始修改第一光阻劑之暴露部分之物理性質之一化學反應而圖案化第一硬遮罩123及第二硬遮罩125。接著,可藉由塗覆一第一顯影劑(亦未個別地圖解說明)而顯影第一光阻劑以便利用暴露區與未暴露區之間之經修改物理性質來選擇性地移除暴露區或未暴露區。 一旦已圖案化第一光阻劑,便可使用該第一光阻劑作為一遮罩以便圖案化下伏第一硬遮罩123及第二硬遮罩125。在一實施例中,第一硬遮罩123及第二硬遮罩125可使用(例如)運用第一光阻劑作為一遮罩之一或多個反應性離子蝕刻製程來圖案化。圖案化製程可繼續,直至虛設閘極電極121暴露在第一硬遮罩123下面。 一旦已圖案化第一硬遮罩123及第二硬遮罩125,便可從第一硬遮罩123及第二硬遮罩125移除第一光阻劑。在一實施例中,可利用(例如)一灰化製程來移除第一光阻劑,藉此升高第一光阻劑之溫度直至第一光阻劑經歷一熱分解且可使用一或多個清潔製程容易地移除。然而,可利用任何其他適合移除製程。 一旦已圖案化第一硬遮罩123及第二硬遮罩125,便可圖案化虛設閘極電極121及虛設閘極介電質119以便形成一系列堆疊129。在一實施例中,使用一各向異性蝕刻製程(諸如一反應性離子蝕刻)圖案化虛設閘極電極121及虛設閘極介電質119,但是可利用任何適合製程。 圖1A亦圖解說明在虛設閘極電極121及虛設閘極介電質119上方形成一第一間隔層127。第一間隔層127可形成在堆疊129之相對側上。可藉由將第一間隔層127毯覆式沉積於先前形成之結構上而形成該第一間隔層127。第一間隔層127可包括SiN、氮氧化物、SiC、SiON、SiOCN、SiOC、氧化物及類似者且可藉由用於形成此一層之方法(諸如化學氣相沉積(CVD)、電漿輔助CVD、濺鍍及此項技術中已知之其他方法)形成。 一旦形成,便可形成一第三光阻劑(圖1A中未單獨圖解說明)以保護定位於I/O區104內之第一間隔層127同時暴露核心區102內之第一間隔層127。一旦已保護I/O區104中之第一間隔層127,便可蝕刻核心區102內之第一間隔層127以便在核心區102內之堆疊129上形成第一間隔件131。在一實施例中,可使用一各向異性蝕刻製程(諸如一反應性離子蝕刻製程)來形成第一間隔件131。 另外,在第一間隔件131之形成期間,將在核心區102內暴露第八半導體層117 (而不暴露I/O區104內之第八半導體層117)。因而,圖1A額外地圖解說明蝕刻第八半導體層117、第七半導體層115、第六半導體層113、第五半導體層111、第四半導體層109、第三半導體層107、第二半導體層105、第一半導體層103及半導體基板101以形成核心開口133。在一實施例中,可使用一或多個各向異性蝕刻(諸如反應性離子蝕刻)來執行對半導體基板101之蝕刻,但可利用任何適合製程。 在一實施例中,核心開口133可經形成以具有介於約10 nm與約40 nm之間(諸如約20 nm)之一第一寬度W1
。另外,核心開口133可經形成以延伸至半導體基板101中介於約5 nm與約20 nm之間(諸如約10 nm)之一第一深度D1
。然而,可利用任何適合尺寸。 一旦已形成核心開口133,便可移除第三光阻劑。在一實施例中,可利用(例如)一灰化製程來移除第三光阻劑,藉此升高第三光阻劑之溫度直至第二光阻劑經歷一熱分解且可使用一或多個清潔製程容易地移除。然而,可利用任何其他適合移除製程。 圖1B圖解說明通過線B-B’之圖1A之結構之一剖面圖。如可見,鰭狀物122在三個側上被虛設閘極介電質119覆蓋使得鰭狀物之三個側在製程中之此時刻受保護。圖1B額外地圖解說明多個鰭狀物122可經形成且由虛設閘極介電質119及虛設閘極電極121覆蓋。 圖2圖解說明圖案化第一半導體層103、第三半導體層107、第五半導體層111及第七半導體層115以便形成第一內間隔件501 (圖2中未單獨圖解說明但下文中關於圖5進一步圖解說明並論述)。在一實施例中,使用運用對於第一半導體層103、第三半導體層107、第五半導體層111及第七半導體層115之材料(例如,鍺化矽)具有選擇性之一蝕刻劑而不顯著移除第二半導體層105、第四半導體層109、第六半導體層113及第八半導體層117之材料(例如,矽)之一濕式蝕刻來執行第一半導體層103、第三半導體層107、第五半導體層111及第七半導體層115之圖案化。舉例而言,在其中第一半導體層103係鍺化矽且第二半導體層105係矽之一實施例中,濕式蝕刻可使用諸如鹽酸(HCl)之一蝕刻劑。 在另一實施例中,可運用一乾式蝕刻製程或一乾式蝕刻製程及一濕式蝕刻製程之一組合來執行第一半導體層103、第三半導體層107、第五半導體層111及第七半導體層115之圖案化。可利用圖案化第一半導體層103、第三半導體層107、第五半導體層111及第七半導體層115之任何適合製程,且全部此等製程完全意欲包含在實施例之範疇內。 在一實施例中,濕式蝕刻製程可係一浸漬製程、一噴射製程、一旋塗製程或類似者。另外,濕式蝕刻製程可在介於約400℃與約600℃之間之一溫度下執行且可持續達介於約100秒與約1000秒之間(諸如約300秒)之時間。然而,可利用任何適合製程條件及參數。 蝕刻製程可繼續以使第一半導體層103、第三半導體層107、第五半導體層111及第七半導體層115凹陷使得在第一半導體層103、第三半導體層107、第五半導體層111與第七半導體層115之間之各層中形成第一凹槽201之(111)刻面限制表面。在一實施例中,第一凹槽201可凹陷介於約3 nm與約8 nm之間(諸如約5 nm)之一第一長度L1
。然而,可利用任何適合尺寸。 另外,當利用蝕刻製程以在核心區102內形成第一凹槽201時,第一間隔層127保護I/O區104內之結構。因而,在I/O區104內未形成第一凹槽201。此允許鰭狀物122保持適合用作一finFET裝置。 另外,一旦已形成第一凹槽201,便可在第二半導體層105、第四半導體層109、第六半導體層113及第八半導體層117內形成第二凹槽203。在一實施例中,可以與第一凹槽201類似之一方式形成第二凹槽203。舉例而言,可運用利用對於第二半導體層105、第四半導體層109、第六半導體層113及第八半導體層117之材料(例如,矽)具有選擇性之一蝕刻劑(諸如TMAH或NH3
(在溶液中))之一濕式蝕刻製程來形成第二凹槽203。 在一實施例中,使用TMAH或NH3
之濕式蝕刻製程可係一浸漬製程、一噴射製程、一旋塗製程或類似者。另外,濕式蝕刻製程可在介於約25°C與約100°C之間之一溫度下執行且可持續達介於約10秒與約200秒之間(諸如約30秒)之時間。然而,可利用任何適合製程條件及參數。 在另一實施例中,第一凹槽201及第二凹槽203可使用一乾式蝕刻製程形成而非使用一單一濕式蝕刻製程形成。在又另一實施例中,可利用濕式蝕刻製程及乾式蝕刻製程之一組合來形成第一凹槽201或第二凹槽203。 圖3圖解說明一旦已在核心區102內形成第一凹槽201及第二凹槽203,便可在I/O區104中形成I/O開口303。在一實施例中,可形成一第四光阻劑(圖3中未單獨圖解說明)以保護核心區102內之裝置,同時暴露I/O區104內之第一間隔層127。一旦已暴露I/O區104中之第一間隔層127,便可蝕刻I/O區104內之第一間隔層127以便在I/O區104內之堆疊129上形成第二間隔件301。在一實施例中,可使用一各向異性蝕刻製程(諸如一反應性離子蝕刻製程)來形成第二間隔件301。 另外,在第二間隔件301之形成期間,將在I/O區104內暴露第八半導體層117。因而,圖3額外地圖解說明蝕刻第八半導體層117、第七半導體層115、第六半導體層113、第五半導體層111、第四半導體層109、第三半導體層107、第二半導體層105、第一半導體層103及半導體基板101以形成I/O開口303。在一實施例中,可使用一或多個各向異性蝕刻(諸如反應性離子蝕刻)來執行對半導體基板101之蝕刻,但是可利用任何適合製程。 在一實施例中,I/O開口303可經形成以具有介於約10 nm與約100 nm之間(諸如約30 nm)之一第二寬度W2
。另外,I/O開口303可經形成以延伸至半導體基板101中介於約5 nm與約30 nm之間(諸如約15 nm)之一第二深度D2
。然而,可利用任何適合尺寸。 一旦已形成I/O開口303,便可移除第三光阻劑。在一實施例中,可利用(例如)一灰化製程來移除第四光阻劑,藉此升高第四光阻劑之溫度直至第四光阻劑經歷一熱分解且可使用一或多個清潔製程容易地移除。然而,可利用任何其他適合移除製程。 圖4圖解說明將一共同間隔件401沉積於核心區102以及I/O區104兩者上方。在一實施例中,共同間隔件401係諸如氮化矽、氮氧化矽之一材料,但可利用諸如具有小於約3.5之一k值之低k材料之任何適合材料。共同間隔件401可使用諸如化學氣相沉積、物理氣相沉積或原子層沉積之一沉積製程沉積至介於約3 nm與約10 nm之間(諸如約5 nm)之一厚度。然而,可利用任何適合厚度或沉積製程。 藉由將共同間隔件401沉積於核心區102及I/O區104兩者上方,共同間隔件401不僅將加襯裡於核心開口133及I/O開口303之側壁,而且將填充形成於核心區102內之第一凹槽201及第二凹槽203。第一凹槽201及第二凹槽203之填充將幫助形成第一奈米線901及第二奈米線1001,下文中關於圖9A及圖10A進一步描述。 圖5圖解說明從核心區102及I/O區104兩者移除共同間隔件401,同時留下填充第一凹槽201之第一內間隔件501且亦留下填充第二凹槽203之第二內間隔件503。在一實施例中,可使用一蝕刻製程(諸如(例如)一各向異性乾式蝕刻製程,諸如一反應性離子蝕刻)來執行移除共同間隔件401。然而,可利用移除共同間隔件401同時留下第一內間隔件501及第二內間隔件503之任何適合蝕刻製程。 一旦已從核心區102及I/O區104兩者移除共同間隔件401,便可使用一濕式蝕刻製程從層(例如,第二半導體層105、第四半導體層109、第六半導體層113及第八半導體層117)移除來自共同間隔件401之任何殘餘材料(例如,氮化矽)。 另外,當從I/O區104完全移除共同間隔件401時,第一內間隔件501將保持填充核心區102內之第一凹槽201且第二內間隔件503將保持填充核心區102內之第二凹槽203。因而,第一內間隔件501將呈現第一凹槽201之形狀且第二內間隔件503將呈現第二凹槽203之形狀。因而,第一內間隔件501可經形成以具有第一長度L1
及第一厚度T1
。另外,第二內間隔件503可經形成以具有第一長度L1
及第二厚度T2
。然而,可利用任何適合尺寸。 圖6圖解說明核心區102及I/O區104兩者內之第一磊晶源極/汲極區601以及核心區102內之第二磊晶源極/汲極區603之形成。在一實施例中,可藉由最初運用(舉例而言)一光阻劑或其他遮罩材料來保護第二裝置108而形成第一磊晶源極/汲極區601。一旦第二裝置108已受保護,便可使用一生長製程(諸如運用諸如矽之一材料之一選擇性磊晶製程)來形成第一磊晶源極/汲極區601。磊晶生長製程可使用諸如矽烷、二氯矽烷、鍺烷及類似者之前驅體,且可持續達介於約5分鐘與約120分鐘之間,諸如約30分鐘。 一旦形成第一磊晶源極/汲極區601,便可藉由植入適當摻雜物以補充第一裝置106及第三裝置110之剩餘部分內之摻雜物而將摻雜物植入至第一磊晶源極/汲極區601中。舉例而言,可植入n型摻雜物(諸如磷(以形成SiP)、砷、銻或類似者)以形成NMOS裝置。可使用堆疊129、第一間隔件131及第二間隔件301植入此等摻雜物作為遮罩。應注意,一般技術者將意識到,可使用許多其他製程、步驟或類似者來植入摻雜物。舉例而言,一般技術者將意識到,可使用間隔件及襯層之各種組合來執行複數個植入以形成具有適於一特定目的之一特定形狀或特性之源極/汲極區。可使用此等製程之任一者來植入摻雜物,且上述描述不意謂將本發明實施例限制於上文中呈現之步驟。 在另一實施例中,可在第一磊晶源極/汲極區601之生長期間放置該第一磊晶源極/汲極區601之摻雜物。舉例而言,當形成第一磊晶源極/汲極區601時,可原位放置磷。可利用用於將摻雜物放置於第一磊晶源極/汲極區601內之任何適合製程,且全部此等製程完全意欲包含在實施例之範疇內。 一旦已形成第一磊晶源極/汲極區601,便可藉由從第二裝置108移除保護(透過(例如)諸如灰化之一製程)且運用(舉例而言)一光阻劑或其他遮罩材料保護第一裝置106及第三裝置110而形成第二磊晶源極/汲極區603。一旦第一裝置106及第三裝置110已受保護,便可使用諸如磊晶生長之一製程由諸如鍺化矽之一材料形成第二磊晶源極/汲極區603,但可利用任何適合材料或製程。另外,在生長製程期間或在生長製程之後,可將諸如硼(用於一p型裝置)之摻雜物放置於第二磊晶源極/汲極區603內。在已形成第二磊晶源極/汲極區603之後,可使用諸如灰化之一製程來移除第一裝置106及第三裝置110之保護。 圖7圖解說明在第一裝置106、第二裝置108及第三裝置110上方形成一層間介電質(ILD)層701。ILD層701可包括諸如硼磷矽酸鹽玻璃(BPSG)之一材料,但可使用任何適合介電質。可使用諸如PECVD之一製程來形成ILD層701,但可替代地使用諸如LPCVD之其他製程。ILD層701可形成至介於約100 Å與約3,000 Å之間之一厚度。一旦形成,便可使用(例如)一平坦化製程(諸如化學機械拋光製程)運用第一間隔件131及第二間隔件301來平坦化ILD層701,但可利用任何適合製程。另外,平坦化製程亦可移除第二硬遮罩125同時停止在第一硬遮罩123上。 圖8圖解說明第一硬遮罩123之移除以及虛設閘極電極121之移除。在一實施例中,可使用諸如一化學機械拋光製程之一平坦化製程來移除第一硬遮罩123以移除第一硬遮罩123之材料且將虛設閘極電極121之材料平坦化至第一間隔件131及第二間隔件301之材料。然而,可利用移除第一硬遮罩123以暴露虛設閘極電極121之材料之任何適合方法。 一旦已暴露虛設電極121,便可移除虛設閘極電極121以便暴露下伏虛設閘極介電質119。在一實施例中,可使用(例如)利用對於虛設閘極電極121之材料具有選擇性之蝕刻劑之一或多個濕式或乾式蝕刻製程來移除虛設閘極電極121。然而,可利用任何適合移除製程。 圖9A圖解說明一旦已暴露虛設閘極介電質119,便可移除第一裝置106 (例如,n型裝置)內之虛設閘極介電質119而不移除第二裝置108或第三裝置110內之虛設閘極介電質119。在一實施例中,可藉由將一保護材料(諸如一光阻劑或其他適合遮罩材料)放置於第二裝置108及第三裝置110上方而從第一裝置106移除虛設閘極介電質119。一旦第二裝置108及第三裝置110已受保護,便可使用(例如)一濕式蝕刻製程來移除第一裝置106內之虛設閘極介電質119,但可利用任何適合蝕刻製程。 一旦已從第一裝置106移除虛設閘極介電質119,便可移除第二裝置108及第三裝置110上方之保護材料。在其中保護材料係一光阻劑材料之一實施例中,可使用一灰化製程(藉此增大光阻劑之溫度,直至發生光阻劑材料之分解)或一剝離製程來移除保護材料。然而,可利用移除保護材料之任何適合方法。 圖9A額外地展示一旦已從第一裝置106移除虛設閘極介電質119 (其亦暴露第一半導體層103、第三半導體層107、第五半導體層111及第七半導體層115之側,如圖9B之剖面圖中可見),便可從第一裝置106內之半導體基板101、第二半導體層105、第四半導體層109、第六半導體層113與第八半導體層117之間移除第一半導體層103、第三半導體層107、第五半導體層111及第七半導體層115。在一實施例中,可使用一濕式蝕刻製程來移除第一半導體層103、第三半導體層107、第五半導體層111及第七半導體層115,該濕式蝕刻製程選擇性地移除第一半導體層103、第三半導體層107、第五半導體層111及第七半導體層115之材料(例如,鍺化矽)而不顯著地移除半導體基板101、第二半導體層105、第四半導體層109、第六半導體層113及第八半導體層117之材料(例如,矽)。然而,可利用任何適合移除製程。 舉例而言,在其中第一半導體層103之材料係鍺化矽且第二半導體層105係矽之一實施例中,可使用一蝕刻劑來執行第一半導體層103之移除,該蝕刻劑選擇性地移除第一半導體層103之材料(例如,鍺化矽)而不實質上移除第二半導體層105之材料(例如,矽)。在一實施例中,蝕刻劑可係高溫HCl。另外,濕式蝕刻製程可在介於約400℃與約600℃之間(諸如約560℃)之一溫度下執行,且達介於約100秒與約600秒之間(諸如約300秒)之時間。然而,可利用任何適合蝕刻劑、製程參數及時間。 藉由移除第一半導體層103、第三半導體層107、第五半導體層111及第七半導體層115之材料,將第一裝置106內之第二半導體層105、第四半導體層109、第六半導體層113及第八半導體層117之材料形成為第一裝置106內之藉由第一內間隔件501彼此分離之第一奈米線901。第一奈米線901包括第一裝置106之通道區,一旦已完成第一裝置106,該等通道區便在第一裝置106內之第一磊晶源極/汲極區601之相對者之間伸展。 圖9B圖解說明沿著圖9A中之線B-B’之第一裝置106之一剖面圖。如可見,一旦已移除虛設閘極介電質119,便暴露第一半導體層103、第二半導體層105、第三半導體層107、第四半導體層109、第五半導體層111、第六半導體層113、第七半導體層115及第八半導體層117之側。因而,第一半導體層103、第三半導體層107、第五半導體層111及第七半導體層115可暴露於蝕刻劑且從其他層之間移除以便形成第一奈米線901。 圖10A圖解說明一旦已在第一裝置106中形成第一奈米線901,便可藉由從第二裝置108內之第一半導體層103、第三半導體層107、第五半導體層111與第七半導體層115之間移除半導體基板101、第二半導體層105、第四半導體層109、第六半導體層113及第八半導體層117之一部分而在第二裝置108中形成第二奈米線1001。 在一實施例中,可藉由將一保護材料(諸如一光阻劑或其他適合遮罩材料)放置於第一裝置106及第三裝置110上方而從第二裝置108移除虛設閘極介電質119。一旦第一裝置106及第三裝置110已受保護,便可使用(例如)一濕式蝕刻製程來移除第二裝置108內之虛設閘極介電質119,但可利用任何適合蝕刻製程。 一旦已從第二裝置108移除虛設閘極介電質119,便可移除第一裝置106及第三裝置110上方之保護材料。在其中保護材料係一光阻劑材料之一實施例中,可使用一灰化製程(藉此增大光阻劑之溫度,直至發生光阻劑材料之分解)或一剝離製程來移除保護材料。然而,可利用移除保護材料之任何適合方法。 圖10A額外地展示一旦已從第二裝置108 (且亦從半導體基板101、第二半導體層105、第四半導體層109、第六半導體層113及第八半導體層117之側,如圖10B中圖解說明)移除虛設閘極介電質119,便可從第一半導體層103、第三半導體層107、第五半導體層111與第七半導體層115之間移除半導體基板101、第二半導體層105、第四半導體層109、第六半導體層113及第八半導體層117。 在一實施例中,可使用一濕式蝕刻製程來移除半導體基板101、第二半導體層105、第四半導體層109、第六半導體層113及第八半導體層117,該濕式蝕刻製程選擇性地移除半導體基板101、第二半導體層105、第四半導體層109、第六半導體層113及第八半導體層117之材料(例如,矽)而不顯著地移除第一半導體層103、第三半導體層107、第五半導體層111及第七半導體層115之材料(例如,鍺化矽)。然而,可使用任何適合製程。 舉例而言,在其中第一半導體層103之材料係鍺化矽且第二半導體層105係矽之一實施例中,可使用一蝕刻劑來執行第二半導體層105之移除,該蝕刻劑選擇性地移除第二半導體層105之材料(例如,矽)而不實質上移除第一半導體層103之材料(例如,鍺化矽)。在一實施例中,用以移除第二半導體層105之蝕刻劑可係諸如四甲基氫氧化銨(TMAH)或氫氧化銨溶液之一蝕刻劑。另外,濕式蝕刻製程可在介於約25°C與約100°C之間(諸如約30°C)之一溫度下執行,且達介於約10秒與約200秒之間(諸如約60秒)之時間。然而,可利用任何適合蝕刻劑、製程參數及時間。 藉由移除半導體基板101、第二半導體層105、第四半導體層109、第六半導體層113及第八半導體層117之材料,將第一半導體層103、第三半導體層107、第五半導體層111及第七半導體層115之材料形成為第二裝置108內之藉由第二內間隔件503彼此分離之第二奈米線1001。第二奈米線1001包括第二裝置108之通道區,一旦已完成第二裝置108,該等通道區便在第二裝置108內之第二磊晶源極/汲極區603之相對者之間伸展。 另外,如圖10A中可見,當第一奈米線901及第二奈米線1001形成於核心區102內之第一裝置106及第二裝置108中時,I/O區104內之第三裝置110內之鰭狀物122在其從第一磊晶源極/汲極區601之間之半導體基板101延伸時保持未被圖案化且連續。 圖10B圖解說明沿著圖10A中之線B-B’之第二裝置108之一剖面圖。如可見,一旦已移除虛設閘極介電質119,便暴露半導體基板101、第二半導體層105、第四半導體層109、第六半導體層113及第八半導體層117之側。因而,半導體基板101、第二半導體層105、第四半導體層109、第六半導體層113及第八半導體層117可暴露於蝕刻劑且從其他層之間移除以便形成第二奈米線1001。 圖11圖解說明I/O區104中之第三裝置110內之虛設閘極介電質119之移除,及第一裝置106、第二裝置108及第三裝置110之各者內之一閘極介電質1101之形成。在一實施例中,可使用(例如)一濕式蝕刻製程來移除第三裝置110內之虛設閘極介電質119,但可利用任何適合蝕刻製程。 一旦已從第三裝置110移除虛設閘極介電質119,便可形成閘極介電質1101。視需要,在形成閘極介電質之前,可形成一第一界面層及一第二界面層(未單獨圖解說明)。在一實施例中,第一界面層可係諸如矽之一界面材料,但可利用任何適合材料。界面材料可使用一沉積製程(諸如原子層沉積或化學氣相沉積)沉積至小於約20 Ǻ (諸如約10 Ǻ)之一非零厚度。然而,可利用任何適合方法及厚度。 在一實施例中,第二界面層包括諸如氧化矽之一緩衝材料,但可利用任何適合材料。第二界面層可使用諸如CVD、PVD或甚至氧化之一製程形成至介於約1 Ǻ與約20 Ǻ之間(諸如約9 Ǻ)之一厚度。然而,可利用任何適合製程或厚度。 在一實施例中,閘極介電質1101係透過諸如原子層沉積、化學氣相沉積或類似者之一製程沉積之一高k材料,諸如HfO2
、HfSiO、HfSiON、HfTaO、HfTiO、HfZrO、LaO、ZrO、Ta2
O5
、此等之組合或類似者。閘極介電質1101可經沉積至介於約5 Ǻ與約200 Ǻ之間之一厚度,但可利用任何適合材料及厚度。如圖解說明,閘極介電質1101纏繞第一奈米線901及第二奈米線1001,因此分別形成第一裝置106及第二裝置108之通道區。 一旦已形成閘極介電質1101,便形成閘極電極1103以上覆第一奈米線901 (在第一裝置106內)、第二奈米線1001 (在第二裝置108內)及第八半導體層117 (在第三裝置110內),但亦圍繞第一奈米線901 (在第一裝置106內)且圍繞第二奈米線1001 (在第二裝置108內)。在一實施例中,使用允許填充第一奈米線901與第二奈米線1001之間之空間之一保形沉積方法(諸如原子層沉積(ALD))來形成閘極電極1103。然而,可利用任何適合材料或形成方法。 在另一實施例中,閘極電極1103可包括各自循序沉積成彼此相鄰之多個層,諸如包括第一金屬之材料、包括第二金屬之材料、阻擋材料及一第一成核層。包括第一金屬之材料可經形成鄰近閘極介電質1101且可由一金屬材料(諸如摻雜有矽之氮化鈦(TSN))形成,但亦可利用其他適合材料,諸如Ti、TiAlN、TaC、TaCN、TaSiN、Mn、Zr、TiN、TaN、Ru、Mo、WN、其他金屬氧化物、金屬氮化物、金屬矽酸鹽、過渡金屬氧化物、過渡金屬氮化物、過渡金屬矽酸鹽、金屬之氮氧化物、金屬鋁酸鹽、矽酸鋯、鋁酸鋯、此等之組合或類似者。在其中包括第一金屬之材料係TSN之一實施例中,可使用諸如原子層沉積之一沉積製程來沉積包括第一金屬之材料,但亦可使用其他適合製程,諸如化學氣相沉積、濺鍍或類似者。包括第一金屬之材料可沉積至介於約5 Ǻ與約200 Ǻ之間之一厚度,但可使用任何適合厚度。 一旦已形成包括第一金屬之材料,包括第二金屬之材料便可經形成鄰近包括第一金屬之材料。在一實施例中,包括第二金屬之材料可由一功函數金屬形成,諸如TiAl、Ti、TiAlN、TaC、TaCN、TaSiN、Mn、Zr、TiN、TaN、Ru、Mo、WN、其他金屬氧化物、金屬氮化物、金屬矽酸鹽、過渡金屬氧化物、過渡金屬氮化物、過渡金屬矽酸鹽、金屬之氮氧化物、金屬鋁酸鹽、矽酸鋯、鋁酸鋯、此等之組合或類似者。另外,包括第二金屬之材料可使用一沉積製程(諸如原子層沉積、化學氣相沉積、濺鍍或類似者)沉積至介於約5 Ǻ與約200 Ǻ之間之一厚度,但可使用任何適合沉積製程或厚度。 可使用阻擋材料來阻止材料從包括第三金屬之材料移動至其他區。在一實施例中,阻擋材料可係諸如氮化鈦之一材料,但可使用任何其他適合材料。阻擋材料可使用諸如原子層沉積、化學氣相沉積、濺鍍或類似者之一製程沉積至約15 Ǻ之一厚度,但可使用任何適合沉積製程或厚度。 在已沉積阻擋材料之後,形成第一成核層以便允許包括第三金屬之材料之一第一成核。另外,在一實施例中,第一成核層形成為無氟材料以便幫助防止氟移動至結構之其他部分中。在其中包括第三金屬之材料係鎢之一特定實施例中,第一成核層可係諸如無氟鎢(FFW)之一材料。 包括第三金屬之材料填充由虛設閘極電極121之移除留下之開口之剩餘部分。在一實施例中,包括第三金屬之材料係諸如W、Al、Cu、AlCu、W、Ti、TiAlN、TaC、TaCN、TaSiN、Mn、Zr、TiN、Ta、TaN、Co、Ni、此等之組合或類似者之一金屬材料,且可使用諸如化學氣相沉積之一沉積技術沉積,但可使用諸如原子層沉積、濺鍍或類似者之任何適合製程來填充及/或過填充由虛設閘極電極121之移除留下之開口。在一特定實施例中,包括第三金屬之材料可沉積至介於約5 Ǻ與約500 Ǻ之間之一厚度,但可利用任何適合材料、沉積製程及厚度。在一特定實施例中,可使用一化學氣相沉積製程來形成包括第三金屬之材料。可利用任何適合製程條件。 一旦已填充由虛設閘極電極121之移除留下之開口,便可平坦化材料以便移除在由虛設閘極電極121之移除留下之開口外部之任何材料。在一特定實施例中,可使用諸如化學機械拋光之一平坦化製程來執行移除。然而,可利用任何適合平坦化及移除製程。 圖11亦圖解說明一旦已形成閘極電極1103,便可透過ILD層701形成矽化物接點1105及接點1107以製成至第一磊晶源極/汲極區601及第二磊晶源極/汲極區603之電連接。在一實施例中,可藉由最初透過ILD層701形成開口(圖11中未單獨圖解說明)而形成矽化物接點1105及接點1107以便暴露第一磊晶源極/汲極區601及第二磊晶源極/汲極區603。可使用(例如)一適合光微影遮罩及蝕刻製程來形成開口。 矽化物接點1105可包括鈦、鎳、鈷或鉺以便減小接點之肖特基障壁高度。然而,亦可使用諸如鉑、鈀及類似者之其他金屬。可藉由一適當金屬層之毯覆式沉積執行矽化,接著進行導致金屬與下伏暴露矽反應之一退火步驟。接著,諸如運用一選擇性蝕刻製程來移除未反應金屬。矽化物接點1105之厚度可介於約5 nm與約50 nm之間。 在一實施例中,接點1107可係諸如Al、Cu、W、Co、Ti、Ta、Ru、TiN、TiAl、TiAlN、TaN、TaC、NiSi、CoSi、此等之組合或類似者之一導電材料,但可使用一沉積製程(諸如濺鍍、化學氣相沉積、電鍍、無電式電鍍或類似者)將任何適合材料沉積至開口中以填充及/或過填充開口。一旦填充或過填充,便可使用諸如化學機械拋光(CMP)之一平坦化製程來移除開口外部之任何沉積材料。然而,可利用任何適合材料及形成製程。 藉由形成且利用核心區102內之第一奈米線901及第二奈米線1001,可運用短通道裝置達成高效能,其中通道可小於100 nm。另外,藉由利用本文中描述之實施例,可運用I/O區104中之長通道裝置避免形成奈米線之缺點(例如,用於閘極結構之填充之一較差製程窗),其中通道可大於約100 nm。 圖12圖解說明其中代替包括交替材料之堆疊層之第三裝置110而將一單一材料用於第三裝置110內之鰭狀物122之另一實施例。在此實施例中,在閘極介電質1101之沉積之前,可在運用(例如)諸如一光阻劑之一保護材料保護第一裝置106及第二裝置108之後使用一或多個蝕刻製程來移除第八半導體層117、第七半導體層115、第六半導體層113、第五半導體層111、第四半導體層109、第三半導體層107、第二半導體層105及第一半導體層103。 一旦已移除第八半導體層117、第七半導體層115、第六半導體層113、第五半導體層111、第四半導體層109、第三半導體層107、第二半導體層105及第一半導體層103,便可使用一單一材料1201重新生長鰭狀物122。在一實施例中,單一材料可係一半導體材料,諸如矽、鍺化矽、III-V族材料或類似者,且可在形成期間摻雜或後來在(例如)一植入製程中摻雜。一旦已重新生長鰭狀物122,便可如上文中描述般形成閘極介電質1101及閘極電極1103。 在一實施例中,一種製造一半導體裝置之方法包含:在一半導體基板之一第一區及一第二區兩者上方形成一第一半導體層,該第一半導體層包括一第一材料;在第一區及第二區上方形成一第二半導體層;從第一區上方移除第一半導體層以由第二半導體層形成一奈米線通道,其中從第一區上方移除第一半導體層未從第二區上方移除第一半導體層;及在奈米線通道周圍形成一第一閘極電極;及在第二區中之第一半導體層及第二半導體層上方形成一第二閘極電極。在一實施例中,至少部分運用一濕式蝕刻製程來執行移除第一半導體層。在一實施例中,方法包含在移除第一半導體層之前形成鄰近第二半導體層之一源極/汲極區。在一實施例中,該方法包含在移除第一半導體層之前在第一半導體層內且在第二半導體層與半導體基板之間形成一間隔件。在一實施例中,第二區中之第一半導體層及第二半導體層形成一finFET之一半導體鰭狀物。在一實施例中,第一半導體層係鍺化矽。在一實施例中,第二半導體層係矽。 在一實施例中,一種製造一半導體裝置之方法包含:在一矽基板上方形成鍺化矽之一第一層;在鍺化矽之第一層上方形成矽之一第一層;圖案化通過鍺化矽之第一層及矽之第一層之一開口以將鍺化矽之第一層分離成一第一區及一第二區;在圖案化通過鍺化矽之第一層之開口之後在鍺化矽之第一層內形成一第一凹槽;用一介電材料填充第一凹槽;移除鍺化矽之第一層之第一區而不移除鍺化矽之第一層之第二區;及同時在矽之第一層之第一區周圍形成一第一介電材料及在鍺化矽之第一層之第二區及矽之第一層兩者上方形成一第二介電材料。在一實施例中,該方法包含在鍺化矽之第一層上方形成一第一虛設閘極介電質;及在鍺化矽之第一層上方形成一第二虛設閘極介電質。在一實施例中,該方法包含移除鄰近鍺化矽之第一層之第一區之第一虛設閘極介電質而不移除第二虛設閘極介電質。在一實施例中,該方法包含在矽之第一層周圍形成一第一閘極電極;及在鍺化矽之第一層之第二區及矽之第一層兩者上方形成一第二閘極電極。在一實施例中,同時執行形成第一閘極電極及形成第二閘極電極。在一實施例中,鍺化矽之第一層之第二區定位於一I/O區內。在一實施例中,矽之第一層周圍之第一介電材料定位於一核心區內。 在一實施例中,一種半導體裝置包含:一半導體基板,其具有一核心區及一I/O區;一第一奈米線,其在定位於核心區內之一第二奈米線上方;一第一內間隔件,其將第一奈米線與第二奈米線分離;一閘極材料,其定位於第一奈米線與第二奈米線之間;一通道,其定位於I/O區內,其中該通道包含定位於具有第一奈米線之一第一平面中之一第一材料,其中第一奈米線包括第一材料;及一第二材料,其定位於具有閘極材料之一第二平面中,第一平面與第二平面平行,第二材料不同於第一材料。在一實施例中,該裝置包含核心區內之一第四奈米線上方之一第三奈米線,第三奈米線及第四奈米線定位於第二平面中且包括第二材料。在一實施例中,第一材料係矽。在一實施例中,第二材料係鍺化矽。在一實施例中,第一內間隔件包括氮化矽。在一實施例中,第一內間隔件具有在一第一方向上減小之一厚度。 前述內容略述數項實施例之特徵,使得熟習此項技術者可更佳地理解本揭露之態樣。熟習此項技術者應瞭解,其等可容易地使用本揭露作為用於設計或修改其他製程及結構之一基礎以實行相同目的及/或達成本文中介紹之實施例之相同優點。熟習此項技術者亦應瞭解,此等等效構造不背離本揭露之精神及範疇,且其等可在不背離本揭露之精神及範疇之情況下在本文中作出各種改變、置換及更改。
101‧‧‧半導體基板
102‧‧‧核心區
103‧‧‧第一半導體層
104‧‧‧I/O區
105‧‧‧第二半導體層
106‧‧‧第一裝置
107‧‧‧第三半導體層
108‧‧‧第二裝置
109‧‧‧第四半導體層
110‧‧‧第三裝置
111‧‧‧第五半導體層
113‧‧‧第六半導體層
115‧‧‧第七半導體層
117‧‧‧第八半導體層
119‧‧‧虛設閘極介電質
121‧‧‧虛設閘極電極
122‧‧‧鰭狀物
123‧‧‧第一硬遮罩
125‧‧‧第二硬遮罩
127‧‧‧第一間隔層
129‧‧‧堆疊
131‧‧‧第一間隔件
133‧‧‧核心開口
135‧‧‧第一隔離區
201‧‧‧第一凹槽
203‧‧‧第二凹槽
301‧‧‧第二間隔件
303‧‧‧I/O開口
401‧‧‧共同間隔件
501‧‧‧第一內間隔件
503‧‧‧第二內間隔件
601‧‧‧第一磊晶源極/汲極區
603‧‧‧第二磊晶源極/汲極區
701‧‧‧層間介電質(ILD)層
901‧‧‧第一奈米線
1001‧‧‧第二奈米線
1101‧‧‧閘極介電質
1103‧‧‧閘極電極
1105‧‧‧矽化物接點
1107‧‧‧接點
1201‧‧‧單一材料
D1‧‧‧第一深度
D2‧‧‧第二深度
L1‧‧‧第一長度
T1‧‧‧第一厚度
T2‧‧‧第二厚度
W1‧‧‧第一寬度
W2‧‧‧第二寬度
當結合附圖閱讀時,從以下詳細描述最佳理解本揭露之態樣。應注意,根據產業中之標準實踐,各種構件未按比例繪製。事實上,為了清楚論述可任意增大或減小各種構件之尺寸。 圖1A至圖1B圖解說明根據一些實施例之一第一半導體材料及一第二半導體材料之交替層之形成。 圖2圖解說明根據一些實施例之第一凹槽及第二凹槽之形成。 圖3圖解說明根據一些實施例之I/O開口之形成。 圖4圖解說明根據一些實施例之一共同間隔件之形成。 圖5圖解說明根據一些實施例之第一內間隔件及第二內間隔件之形成。 圖6圖解說明根據一些實施例之源極/汲極區之形成。 圖7圖解說明根據一些實施例之一層間介電質之形成。 圖8圖解說明根據一些實施例之一虛設閘極電極之移除。 圖9A至圖9B圖解說明根據一些實施例之一第一材料之移除。 圖10A至圖10B圖解說明根據一些實施例之一第二材料之移除。 圖11圖解說明根據一些實施例之一閘極結構之形成。 圖12圖解說明根據一些實施例之將一單一第一材料用於一鰭狀物之一裝置。
Claims (20)
- 一種製造一半導體裝置之方法,該方法包括: 在一半導體基板之一第一區及一第二區兩者上方形成一第一半導體層,該第一半導體層包括一第一材料; 在該第一區及該第二區上方形成一第二半導體層; 從該第一區上方移除該第一半導體層以由該第二半導體層形成一奈米線通道,其中該從該第一區上方移除該第一半導體層未從該第二區上方移除該第一半導體層;及 在該奈米線通道周圍形成一第一閘極電極;及 在該第二區中之該第一半導體層及該第二半導體層上方形成一第二閘極電極。
- 如請求項1之方法,其中至少部分運用一濕式蝕刻製程來執行該移除該第一半導體層。
- 如請求項1之方法,其進一步包括在該移除該第一半導體層之前形成鄰近該第二半導體層之一源極/汲極區。
- 如請求項1之方法,其進一步包括在該移除該第一半導體層之前在該第一半導體層內且在該第二半導體層與該半導體基板之間形成一間隔件。
- 如請求項1之方法,其中該第二區中之該第一半導體層及該第二半導體層形成一finFET之一半導體鰭狀物。
- 如請求項1之方法,其中該第一半導體層係鍺化矽。
- 如請求項6之方法,其中該第二半導體層係矽。
- 一種製造一半導體裝置之方法,該方法包括: 在一矽基板上方形成鍺化矽之一第一層; 在鍺化矽之該第一層上方形成矽之一第一層; 圖案化通過鍺化矽之該第一層及矽之該第一層之一開口以將鍺化矽之該第一層分離成一第一區及一第二區; 在該圖案化通過鍺化矽之該第一層之該開口之後在鍺化矽之該第一層內形成一第一凹槽; 用一介電材料填充該第一凹槽; 移除鍺化矽之該第一層之該第一區而不移除鍺化矽之該第一層之該第二區;及 同時在矽之該第一層之該第一區周圍形成一第一介電材料且在鍺化矽之該第一層之該第二區及矽之該第一層兩者上方形成一第二介電材料。
- 如請求項8之方法,其進一步包括: 在鍺化矽之該第一層上方形成一第一虛設閘極介電質;及 在鍺化矽之該第一層上方形成一第二虛設閘極介電質。
- 如請求項9之方法,其進一步包括移除鄰近鍺化矽之該第一層之該第一區之該第一虛設閘極介電質而不移除該第二虛設閘極介電質。
- 如請求項8之方法,其進一步包括: 在矽之該第一層周圍形成一第一閘極電極;及 在鍺化矽之該第一層之該第二區及矽之該第一層兩者上方形成一第二閘極電極。
- 如請求項11之方法,其中同時執行該形成該第一閘極電極及該形成該第二閘極電極。
- 如請求項8之方法,其中鍺化矽之該第一層之該第二區定位於一I/O區內。
- 如請求項8之方法,其中矽之該第一層周圍之該第一介電材料定位於一核心區內。
- 一種半導體裝置,其包括: 一半導體基板,其具有一核心區及一I/O區; 一第一奈米線,其在定位於該核心區內之一第二奈米線上方; 一第一內間隔件,其將該第一奈米線與該第二奈米線分離; 一閘極材料,其定位於該第一奈米線與該第二奈米線之間; 一通道,其定位於該I/O區內,其中該通道包括: 一第一材料,其定位於具有該第一奈米線之一第一平面中,其中該第一奈米線包括該第一材料;及 一第二材料,其定位於具有該閘極材料之一第二平面中,該第一平面與該第二平面平行,該第二材料不同於該第一材料。
- 如請求項15之半導體裝置,其進一步包括該核心區內之一第四奈米線上方之一第三奈米線,該第三奈米線及該第四奈米線定位於該第二平面中且包括該第二材料。
- 如請求項15之半導體裝置,其中該第一材料係矽。
- 如請求項17之半導體裝置,其中該第二材料係鍺化矽。
- 如請求項15之半導體裝置,其中該第一內間隔件包括氮化矽。
- 如請求項15之半導體裝置,其中該第一內間隔件具有在一第一方向上減小之一厚度。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201762552737P | 2017-08-31 | 2017-08-31 | |
US62/552,737 | 2017-08-31 | ||
US15/864,793 | 2018-01-08 | ||
US15/864,793 US10297508B2 (en) | 2017-08-31 | 2018-01-08 | Semiconductor device and method |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201914032A true TW201914032A (zh) | 2019-04-01 |
TWI685975B TWI685975B (zh) | 2020-02-21 |
Family
ID=65437706
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW107113068A TWI685975B (zh) | 2017-08-31 | 2018-04-17 | 半導體裝置及方法 |
Country Status (3)
Country | Link |
---|---|
US (4) | US10297508B2 (zh) |
KR (1) | KR102106958B1 (zh) |
TW (1) | TWI685975B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI784658B (zh) * | 2020-08-31 | 2022-11-21 | 日商斯庫林集團股份有限公司 | 基板處理方法以及基板處理裝置 |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109427779B (zh) * | 2017-08-22 | 2021-07-13 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
US10297508B2 (en) * | 2017-08-31 | 2019-05-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method |
US10720494B2 (en) * | 2018-01-22 | 2020-07-21 | Globalfoundries Inc. | Field-effect transistors with airgaps |
US10825919B2 (en) * | 2019-02-21 | 2020-11-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Methods of fabricating semiconductor devices having gate-all-around structure with inner spacer last process |
KR20200145974A (ko) | 2019-06-21 | 2020-12-31 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
KR20210018573A (ko) * | 2019-08-05 | 2021-02-18 | 삼성전자주식회사 | 활성 영역 및 게이트 구조물을 갖는 반도체 소자 |
US11145765B2 (en) * | 2019-09-26 | 2021-10-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gate-all-around structure with self substrate isolation and methods of forming the same |
US11417653B2 (en) * | 2019-09-30 | 2022-08-16 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and method for forming the same |
TW202129721A (zh) * | 2019-10-22 | 2021-08-01 | 美商應用材料股份有限公司 | 藉由選擇性磊晶再生長之環繞式閘極輸入輸出的形成方法 |
KR20210054354A (ko) | 2019-11-05 | 2021-05-13 | 삼성전자주식회사 | 반도체 소자 |
US11664420B2 (en) | 2019-12-26 | 2023-05-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method |
DE102020110792B4 (de) | 2019-12-27 | 2022-08-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Halbleitervorrichtungsstruktur mit Finnenstruktur und mehreren Nanostrukturen und Verfahren zum Bilden derselben |
US11362096B2 (en) * | 2019-12-27 | 2022-06-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device structure and method for forming the same |
US11404417B2 (en) * | 2020-02-26 | 2022-08-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Low leakage device |
US11695055B2 (en) * | 2020-03-03 | 2023-07-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Passivation layers for semiconductor devices |
US11557659B2 (en) * | 2020-04-29 | 2023-01-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gate all around transistor device and fabrication methods thereof |
US11271113B2 (en) * | 2020-06-12 | 2022-03-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device structure and method for forming the same |
KR20220010843A (ko) | 2020-07-20 | 2022-01-27 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
US11974441B2 (en) | 2020-08-13 | 2024-04-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Memory array including epitaxial source lines and bit lines |
US11791216B2 (en) | 2020-09-15 | 2023-10-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Nanostructure field-effect transistor device and method of forming |
KR20220080770A (ko) * | 2020-12-07 | 2022-06-15 | 삼성전자주식회사 | 반도체 소자 |
US11688797B2 (en) * | 2021-01-04 | 2023-06-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and forming method thereof |
US12040382B2 (en) * | 2021-02-12 | 2024-07-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of forming a nano-FET semiconductor device |
US12021116B2 (en) | 2021-06-04 | 2024-06-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor gates and methods of forming the same |
US20230018480A1 (en) * | 2021-07-16 | 2023-01-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device structure and method for forming the same |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4922373B2 (ja) * | 2009-09-16 | 2012-04-25 | 株式会社東芝 | 半導体装置およびその製造方法 |
US8183104B2 (en) * | 2010-07-07 | 2012-05-22 | Hobbs Christopher C | Method for dual-channel nanowire FET device |
WO2013095341A1 (en) * | 2011-12-19 | 2013-06-27 | Intel Corporation | Cmos implementation of germanium and iii-v nanowires and nanoribbons in gate-all-around architecture |
US9590089B2 (en) * | 2011-12-30 | 2017-03-07 | Intel Corporation | Variable gate width for gate all-around transistors |
US9236267B2 (en) | 2012-02-09 | 2016-01-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cut-mask patterning process for fin-like field effect transistor (FinFET) device |
US9006829B2 (en) | 2012-08-24 | 2015-04-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Aligned gate-all-around structure |
US9209247B2 (en) | 2013-05-10 | 2015-12-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Self-aligned wrapped-around structure |
US9136332B2 (en) | 2013-12-10 | 2015-09-15 | Taiwan Semiconductor Manufacturing Company Limited | Method for forming a nanowire field effect transistor device having a replacement gate |
US9136106B2 (en) | 2013-12-19 | 2015-09-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for integrated circuit patterning |
US9608116B2 (en) | 2014-06-27 | 2017-03-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | FINFETs with wrap-around silicide and method forming the same |
US9853166B2 (en) * | 2014-07-25 | 2017-12-26 | International Business Machines Corporation | Perfectly symmetric gate-all-around FET on suspended nanowire |
US9412817B2 (en) | 2014-12-19 | 2016-08-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Silicide regions in vertical gate all around (VGAA) devices and methods of forming same |
US9536738B2 (en) | 2015-02-13 | 2017-01-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Vertical gate all around (VGAA) devices and methods of manufacturing the same |
US9502265B1 (en) | 2015-11-04 | 2016-11-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Vertical gate all around (VGAA) transistors and methods of forming the same |
US9520482B1 (en) | 2015-11-13 | 2016-12-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of cutting metal gate |
US9601569B1 (en) * | 2015-12-07 | 2017-03-21 | Samsung Electronics Co., Ltd. | Semiconductor device having a gate all around structure |
KR102360333B1 (ko) * | 2016-02-18 | 2022-02-08 | 삼성전자주식회사 | 반도체 장치 |
CN106960870B (zh) | 2016-01-11 | 2021-09-10 | 三星电子株式会社 | 半导体装置及其制造方法 |
KR102343470B1 (ko) | 2016-01-28 | 2021-12-24 | 삼성전자주식회사 | 반도체 장치 및 이의 제조 방법 |
US10439039B2 (en) * | 2016-03-25 | 2019-10-08 | Qualcomm Incorporated | Integrated circuits including a FinFET and a nanostructure FET |
US9660028B1 (en) * | 2016-10-31 | 2017-05-23 | International Business Machines Corporation | Stacked transistors with different channel widths |
KR102564325B1 (ko) * | 2017-01-04 | 2023-08-07 | 삼성전자주식회사 | 다수의 채널 영역을 가지는 반도체 장치 |
US10297508B2 (en) * | 2017-08-31 | 2019-05-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method |
-
2018
- 2018-01-08 US US15/864,793 patent/US10297508B2/en active Active
- 2018-04-17 TW TW107113068A patent/TWI685975B/zh active
- 2018-05-29 KR KR1020180061272A patent/KR102106958B1/ko active IP Right Grant
-
2019
- 2019-05-20 US US16/417,341 patent/US10672667B2/en active Active
- 2019-10-11 US US16/599,840 patent/US11056400B2/en active Active
-
2021
- 2021-07-06 US US17/368,550 patent/US20210335676A1/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI784658B (zh) * | 2020-08-31 | 2022-11-21 | 日商斯庫林集團股份有限公司 | 基板處理方法以及基板處理裝置 |
Also Published As
Publication number | Publication date |
---|---|
US11056400B2 (en) | 2021-07-06 |
US20190067122A1 (en) | 2019-02-28 |
KR102106958B1 (ko) | 2020-05-07 |
US10297508B2 (en) | 2019-05-21 |
US20190279911A1 (en) | 2019-09-12 |
US20200043803A1 (en) | 2020-02-06 |
US10672667B2 (en) | 2020-06-02 |
TWI685975B (zh) | 2020-02-21 |
KR20190024625A (ko) | 2019-03-08 |
US20210335676A1 (en) | 2021-10-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI685975B (zh) | 半導體裝置及方法 | |
US11037824B2 (en) | Semiconductor device and method for manufacturing the same | |
CN107689376B (zh) | 半导体器件和方法 | |
CN109585373B (zh) | 具有可控气隙的finfet结构 | |
TWI659514B (zh) | 半導體裝置及其製造方法 | |
US10170427B2 (en) | Semiconductor device and method | |
CN109216456B (zh) | 半导体器件和方法 | |
US10797140B2 (en) | Semiconductor device and method | |
CN110957270B (zh) | 半导体器件和制造方法 | |
CN109427901B (zh) | 半导体器件和方法 | |
CN111129144B (zh) | 栅极间隔件结构及其形成方法 | |
US20220173222A1 (en) | Semiconductor Device and Method of Manufacture | |
TWI789761B (zh) | 半導體元件與其製造方法 | |
KR102370296B1 (ko) | 반도체 디바이스 및 제조 방법 | |
CN114975275A (zh) | 半导体器件和方法 | |
US20240112957A1 (en) | Barrier layer for weakened boundary effect | |
US20230290824A1 (en) | Semiconductor device structure and method for forming the same | |
US20230047598A1 (en) | Semiconductor devices and methods of manufacture | |
US11127857B2 (en) | Semiconductor device and method of manufacture | |
TW202145300A (zh) | 半導體裝置及其製造方法 |