TW201840577A - 矽烷胺化合物、含彼之用於沉積含矽薄膜的組合物、以及使用該組合物製造含矽薄膜的方法 - Google Patents

矽烷胺化合物、含彼之用於沉積含矽薄膜的組合物、以及使用該組合物製造含矽薄膜的方法 Download PDF

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TW201840577A
TW201840577A TW107110758A TW107110758A TW201840577A TW 201840577 A TW201840577 A TW 201840577A TW 107110758 A TW107110758 A TW 107110758A TW 107110758 A TW107110758 A TW 107110758A TW 201840577 A TW201840577 A TW 201840577A
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silicon
thin film
composition
chemical formula
film
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TW107110758A
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TWI711624B (zh
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金成基
李相道
朴重進
張世珍
楊炳日
朴廷主
李三東
李相益
金銘雲
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南韓商Ｄｎｆ有限公司
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Abstract

本發明提供一種矽烷胺化合物、一種含彼之用於沉積含矽薄膜的組合物、以及一種使用該組合物製造含矽薄膜的方法，更具體地說，一種能夠有效地作為含矽薄膜之前驅物的矽烷胺化合物、一種含彼之用於沉積含矽薄膜的組合物、以及一種使用該組合物製造含矽薄膜的方法。

Description

矽烷胺化合物、含彼之用於沉積含矽薄膜的組合物、以及使用該組合物製造含矽薄膜的方法
本發明係關於一種矽烷胺化合物、一種含彼之用於沉積含矽薄膜的組合物、以及一種使用該組合物製造含矽薄膜的方法，更具體地說，一種能顯著有效地作為含矽薄膜之前驅物的新穎矽烷胺化合物、一種含彼之用於沉積含矽薄膜的組合物、以及一種使用該組合物製造含矽薄膜的方法。
含矽薄膜在半導體領域中係由各種沉積製程製造，從而被製造成各種形式，例如：矽薄膜、氧化矽薄膜、氮化矽薄膜、碳氮化矽薄膜、及氮氧化矽薄膜，且含矽薄膜可應用於各種領域。
尤其，由於氧化矽薄膜及氮化矽薄膜具有顯著優異的阻隔性及抗氧化性，因此氧化矽薄膜及氮化矽薄膜於製造設備時係作為絕緣膜、擴散阻絕層、硬式光罩(hard mask)、蝕刻終止層、種晶層、間隔物、凹溝隔離物(trench isolation)、介金屬介電材料、鈍化層(passivation layer)。
近來，多晶矽薄膜已被用於薄膜電晶體(TFT)、太陽能電池等，且其應用領域逐漸地多樣化。
本領域所熟知之製造含矽薄膜的代表技術有：金屬有機化學氣相沉積(MOCVD)法，係使氣態矽前驅物與反應氣體彼此反應以在基板的表面上形成膜，或者直接使氣態矽前驅物與反應氣體於表面彼此反應以形成膜；以及原子層沉積(ALD)法，係物理性或化學性地吸附氣態矽前驅物，然後注入反應氣體以形成膜。諸如採用上述方法的低壓化學氣相沉積(LPCVD)、電漿增強化學氣相沉積(PECVD)、能在低溫進行沉積的電漿增強原子層沉積(PEALD)法等各種製造薄膜技術已被用於製造下一代半導體及顯示裝置的製程，以形成超細圖案以及沉積在奈米尺度厚度下具有均勻及優異性質的超薄膜。
用於形成該含矽薄膜的前驅物之代表實例可包括矽烷、矽烷化合物、胺基矽烷、及烷氧矽烷化合物。其具體實例可包括如二氯矽烷(SiH2Cl2)及六氯二矽烷(Cl3SiSiCl3)之氯化矽烷化合物、三矽烷胺(N(SiH3)3)、雙-二乙基胺基矽烷(H2Si(N(CH2CH3)2)2)、二異丙基胺基矽烷(H3SiN(i-C3H7)2)等。這些前驅物已被用於製造半導體及顯示器的量產製程中。
然而，因裝置的超高整合及長寬比(aspect ratio)的增加所導致的裝置精細度，以及裝置材料的多樣化等緣故，仍需要一種可在期望低溫下形成具有均勻及薄厚度及優異性質之超精細薄膜的方法。因此，使用既有矽前驅物的高溫製程(600℃或更高)下，薄膜的階梯覆蓋性(step coverage)、蝕刻性質、物理性質及電性質會有問題，因而須發展新穎的更 優異的矽前驅物及形成薄膜的方法且已加以研究。
本發明之一目的在於提供一種能夠作為含矽薄膜之前驅物的新穎矽烷胺化合物。
本發明之另一目的在於提供一種用於沉積含矽薄膜的組合物，其含有根據本發明的矽烷胺化合物；以及提供一種使用該用於沉積含矽薄膜的組合物製造含矽薄膜的方法。
在一個一般性實施方案中，提供一種即使在低溫下亦具有優異內聚力、高沉積率、優異物理性質及電性質的矽烷胺化合物，該矽烷胺化合物係如以下化學式1所示。
(在化學式1中，R1至R4各自獨立為(C1-C7)烷基或(C2-C7)烯基，或者R1與R2及R3與R4各自彼此連結而形成一環。)
較佳地，在根據本發明之化學式1所示之矽烷胺化合物中，R1至R4可各自獨立為(C1-C5)烷基或(C2-C5)烯基。
較佳地，根據本發明例示性實施態樣之化學式1所示之矽烷胺化合物可如以下化學式2或化學式3所示。
(在化學式2及化學式3中，R11至R14各自獨立為(C1-C5)烷基或(C2-C5)烯基；以及n及m各自獨立為1至7之整數。)
較佳地，在根據本發明例示性實施態樣之化學式2或化學式3中，R11至R14可各自獨立為(C1-C3)烷基或(C2-C3)烯基；以及n及m各自獨立為1至4之整數。
更佳地，R11至R14可各自獨立為(C1-C3)烷基；以及n及m各自獨立為1至3之整數。
根據本發明例示性實施態樣之化學式1所示之矽烷胺化合物可選自但不限於以下化合物。
在另一個一般性實施方案中，提供一種用於沉積含矽薄膜的組合物，其含有根據本發明例示性實施態樣之矽烷胺化合物。
在另一個一般性實施方案中，提供一種使用根據本發明例示性實施態樣之用於沉積含矽薄膜的組合物製造含矽薄膜的方法。
在該製造含矽薄膜的方法中，含矽薄膜可藉由原子層沉積(ALD)法、化學氣相沉積(CVD)法、金屬有機化學氣相沉積(MOCVD)法、低壓化學氣相沉積(LPCVD)法、電漿增強化學氣相沉積(PECVD)法、或電漿增強原子層沉積(PEALD)法形成，且含矽薄膜可為氧化矽(SiO2)薄膜、碳氧化矽(SiOC)薄膜、氮化矽(SiN)薄膜、氮氧化矽(SiON)薄膜、碳氮化矽(SiCN)薄膜、或碳化矽(SiC)薄膜。
更具體地，根據本發明之製造含矽薄膜的方法可包括：a)將安裝於腔室中之基板的溫度維持於30℃至400℃；b)使該基板與根據本發明之用於沉積含矽薄膜的組合物接觸，以將用於沉積含矽薄膜的組合物吸附於該基板中；以及c)將反應氣體注入至其中吸附有該用於沉積含矽薄膜的組合物的該基板中，以形成含矽薄膜。
在該製造含矽薄膜的方法中，該反應氣體係被50W至1000W之電漿功率所產生電漿活化後提供。
根據本發明之新穎矽烷胺化合物係在室溫下為液態且具有高揮發性及優異熱穩定性及反應性，因此該矽烷胺化合物係顯著有效地作為含矽薄膜之前驅物。
進一步地，根據本發明之用於沉積含矽薄膜的組合物含有根據本發明之矽烷胺化合物作為前驅物，從而可在低功率及薄膜形成溫度條件下提供一種具有高純度及耐久性的高品質含矽薄膜。
進一步地，在使用根據本發明之用於沉積含矽薄膜的組合物製造含矽薄膜的方法中，即使在低的薄膜形成溫度條件下仍可實現優異的沉積率及優異的應力強度，並且在由此製得的含矽薄膜中，雜質(如碳、氧、及氫)的含量可最小化，使得該含矽薄膜可具有高純度、優異物理性質與電性質、以及優異水汽穿透率及階梯覆蓋性。
第1圖為示出量測實施例1及實施例2製得的雙(乙基甲基胺 基矽基)胺及雙(二乙基胺基矽基)胺之蒸氣壓所得的結果的視圖。
第2圖為示出使用紅外光譜分析實施例3及比較例3及比較例4製造之氧化矽薄膜所得的結果的視圖。
第3圖為示出使用穿透式電子顯微鏡(TEM)分析實施例3及比較例3及比較例4製造之氧化矽薄膜所得的結果的視圖。
本發明提供一種矽烷胺化合物，其在室溫下為液態且具有高揮發性及優異熱穩定性，因此可作為用於形成含矽薄膜之顯著有用的前驅物，其中該矽烷胺化合物係如以下化學式1所示。
(在化學式1中，R1至R4各自獨立為(C1-C7)烷基或(C2-C7)烯基，或者R1與R2及R3與R4各自彼此連結而形成一環。)
在用於沉積含矽薄膜的組合物所含有的該矽烷胺化合物中，胺具有二個胺基矽基(aminosilyl)之官能基作為取代基，且在此二個官能基中的每個矽原子必須有二個氫原子與之連接，如此在室溫下該矽烷胺化合物為液態，且具有高揮發性及與表面及反應氣體的優異反應性。因此，該矽烷胺化合物可顯著有用地用於形成含矽薄膜。
更具體而言，該矽烷胺化合物係為具有矽氮烷(silazane) 主幹的化合物，同時必須係具有二個胺基矽基之官能基(與)，且其中該二個官能基中的每個矽原子必須有二個氫原子與之連接，如此可更有用地作為用於沉積薄膜的前驅物。
更佳地，在根據本發明之化學式1中，R1至R4各自獨立為(C1-C5)烷基或(C2-C5)烯基，且更佳地，(C1-C3)烷基或(C2-C3)烯基。
較佳地，根據本發明之化學式1所示之矽烷胺化合物可如以下化學式2或化學式3所示。
(在化學式2及化學式3中，R11至R14各自獨立為(C1-C5)烷基或(C2-C5)烯基；以及n及m各自獨立為1至7之整數。)
在該矽烷胺化合物中，矽氮烷主幹中的二個胺基矽基的每個矽原子必須有二個氫原子與之連接，以使得矽烷胺化合物作為用於沉積薄膜的前驅物時具有更優異的效果。
較佳地，在根據本發明例示性實施態樣之化學式2或化學式3中，R11至R14可各自獨立為(C1-C3)烷基或(C2-C3)烯基；以及n及m可各自獨立為1至4之整數。更佳地，R11至R14可各自獨立為(C1-C3)烷基；以及n及m可各自獨立為1至3之整數。
更佳地，根據本發明之化學式1所示之矽烷胺化合物為如下化學式4所示之化合物，其中NH基的二側彼此對稱，以在作為用於沉積薄膜的前驅物時具有更優異的效果。
(在化學式4中，R1及R2各自獨立為(C1-C7)烷基或(C2-C7)烯基，或者彼此連結而形成一環。)
根據本發明例示性實施態樣之化學式1所示之矽烷胺化合物可選自但不限於以下化合物。
另外，本發明提供一種用於沉積含矽薄膜的組合物，其含有根據本發明例示性實施態樣之矽烷胺化合物。
根據本發明之用於沉積含矽薄膜的組合物必須含有根據本發明例示性實施態樣之化學式1所示之矽烷胺化合物作為用於沉積薄膜的前驅物，且用於沉積含矽薄膜的組合物中的該矽烷胺化合物之含量可在本領域技藝人士考慮薄膜形成條件、厚度、性質等時可認可的含量範圍內。
於本文中，術語「烷基」指線狀、分支狀、及環狀之飽和及不飽和碳氫化合物，其具有1至7個碳原子，較佳具有1至5個碳原子，且更佳具有1至3個碳原子，其實例可包括甲基、乙基、丙基、異丁基、戊基等。
於本文中，術語「鹵素」指鹵素元素，其實例包括氟基、氯基、溴基、碘基。
於本文中，術語「烯基」作為單獨基團或另一基團的一部分，係指一直鏈、支鏈、或環狀碳氫化合物基團，其具有2至7個碳原子及一或多個碳-碳雙鍵。更佳的烯基為具有2至5個碳原子之低碳烯基。最佳的低碳烯基係一具有大約2至3個碳原子之低碳烯基。進一步地，烯基可在任一可連接點處被取代。烯基之實例包括乙烯基、丙烯基、烯丙基、丁烯基、4-甲基丁烯基。該術語「烯基」及「低碳烯基」包括具有順分子配向及反分子配向或者E分子配向及Z分子配向之基團。
於本文中，用語「R1與R2及R3與R4各自彼此連結而形成一環」包括其中R1與R2彼此連結成環但R3與R4不形成環的狀況；其相反狀況，R1與R2不形成環但R3與R4彼此連結成環；以及R1與R2彼此連結成環且R3與R4彼此連結成環的狀況，其中形成的環可為含N的脂環或芳香環，較佳為脂環。
根據本發明之化學式1所示之矽烷胺化合物可由任一方法製得，只要該方法為本領域技藝人士所認可。作為實例，該矽烷胺化合物可藉由使以下化學式11、化學式12、及化學式13所示之化合物反應而製得。
(在化學式11至化學式13中， R1至R4各自獨立為(C1-C7)烷基或(C2-C7)烯基，或者R1與R2及R3與R4各自彼此連結而形成一環，以及X1為鹵素。)
較佳地，根據本發明例示性實施態樣，基於1莫耳的化學式11所示之化合物，化學式12及化學式13所示之化合物可以1.1至4.2莫耳之含量使用，且反應可在室溫下進行，特別是在18℃至35℃下進行2至8小時。
根據本發明例示性實施態樣之化學式11所示之化合物可由任一方法合成，只要該方法為本領域技藝人士所認可。作為實例，該化合物可藉由使以下化學式14及化學式15所示之化合物於酸存在下反應而製得。
(在化學式14及化學式15中，R為(C1-C7)烷基，以及X1為鹵素)
作為根據本發明例示性實施態樣之酸，只要為路易士酸則可使用，但較佳使用AlCl3。
基於1莫耳的化學式14所示之化合物，化學式15所示之化合物可以2至4.5莫耳之含量使用；且基於1莫耳的化學式14所示之化合物，路易士酸可以0.005至1莫耳，更佳0.005至0.01莫耳之含量使用。反應可在-30 ℃至-5℃下進行1至6小時。
另外，本發明提供一種使用根據本發明例示性實施態樣之用於沉積含矽薄膜的組合物製造含矽薄膜的方法。
在根據本發明之製造含矽薄膜的方法中，係使用根據本發明例示性實施態樣之用於沉積含矽薄膜的組合物，該組合物包含化學式1所示之在室溫下為液態且具有高揮發性及優異熱穩定性之矽烷胺化合物作為前驅物，從而使得處理上變得容易，得以製造各種薄膜，且即使在低溫及低功率下亦可在高沉積速率下製造具有高純度的含矽薄膜。
進一步地，根據本發明之方法製造的含矽薄膜具有優異耐久性及電性質，以及對氟化氫具有抗性，其水汽穿透率、階梯覆蓋性亦為優異的。
在根據本發明之製造含矽薄膜的方法中，該含矽薄膜可由任一方法形成，只要該方法為本領域技藝人士所認可。然而，較佳地，該含矽薄膜可藉由原子層沉積(ALD)法、化學氣相沉積(CVD)法、金屬有機化學氣相沉積(MOCVD)法、低壓化學氣相沉積(LPCVD)法、電漿增強化學氣相沉積(PECVD)法、或電漿增強原子層沉積(PEALD)法形成，但為了讓薄膜能更容易沉積，且使得製造的薄膜具有優異性質，PECVD、ALD、或PEALD是更佳的。
根據本發明之含矽薄膜可為氧化矽(SiO2)薄膜、碳氧化矽(SiOC)薄膜、氮化矽(SiN)薄膜、氮氧化矽(SiON)薄膜、碳氮化矽(SiCN)薄膜、或碳化矽(SiC)薄膜，且具有高品質的各種薄膜均可被製造。
更具體地，根據本發明之製造含矽薄膜的方法可包括：a)將安裝於腔室中之基板的溫度維持於30℃至500℃，較佳30℃至150℃，且更佳30℃至100℃；b)使該基板與根據本發明之用於沉積含矽薄膜的組合物接觸，以將用於沉積含矽薄膜的組合物吸附於該基板中；以及c)將反應氣體注入至其中吸附有該用於沉積含矽薄膜的組合物的該基板中，以形成含矽薄膜。
更具體地，根據本發明之製造含矽薄膜的方法可包括：A)將安裝於腔室中之基板的溫度維持於30℃至500℃；B)使該基板與根據本發明之用於沉積含矽薄膜的組合物接觸，以將該組合物吸附於該基板中；C)沖洗(purging)剩下的用於沉積含矽薄膜的組合物及副產物；D)將反應氣體注入至其中吸附有該用於沉積含矽薄膜的組合物的該基板中，以形成含矽薄膜；以及E)沖洗剩下的反應氣體及副產物，其中步驟D)中的反應氣體可除去用於沉積含矽薄膜的組合物中所含之該矽烷胺化合物的配位基，以形成Si-O原子層。
較佳地，根據例示性實施態樣之反應氣體可被50W至1000W之電漿功率所產生電漿活化後提供。
在根據本發明例示性實施態樣之製造含矽薄膜的方法中，係使用根據本發明之矽烷胺化合物作為前驅物，使得沉積可在50℃至90℃的低溫下進行，以及反應氣體可被在50W至400W的低電漿功率下所產生電漿 活化，從而可製造該薄膜。在根據本發明例示性實施態樣之製造含矽薄膜的方法中，沉積條件可視期望之薄膜的結構或熱性質調整。根據本發明例示性實施態樣之沉積條件的實例可包括：含矽烷胺化合物之用於沉積含矽薄膜的組合物的注入流率、反應氣體及載體氣體的注入流率、壓力、RF功率、該基板的溫度等。作為沉積條件的非限制性實例，用於沉積含矽薄膜的組合物的注入流率可在10立方公分/分鐘至1000立方公分/分鐘的範圍調整；載體氣體的注入流率可在10立方公分/分鐘至1000立方公分/分鐘的範圍調整；反應氣體的注入流率可在1立方公分/分鐘至1500立方公分/分鐘的範圍調整；壓力可在0.5托至10托的範圍調整；RF功率可在50W至1000W的範圍調整；該基板的溫度可在30℃至500℃，較佳30℃至200℃的範圍調整，但沉積條件不限於此。
根據本發明之製造含矽薄膜的方法使用的反應氣體並無限制，但可選自氫氣(H2)、聯氨(N2H4)、臭氧(O3)、氧氣(O2)、一氧化二氮(N2O)、氨(NH3)、氮氣(N2)、矽烷(SiH4)、硼烷(BH3)、二硼烷(B2H6)、及膦(PH3)之一者或前述之二或多者的混合氣體，載體氣體可選自氮氣(N2)、氬(Ar)、及氦(He)之一者或前述之二或多者的混合氣體。
根據本發明之製造含矽薄膜的方法使用的基板可為：含有一或多種選自Si、Ge、SiGe、GaP、GaAs、SiC、SiGeC、InAs、及InP之半導體材料的基板；絕緣體上矽(SOI)基板；石英基板；用於顯示器的玻璃基板；或可由但不限於聚醯亞胺、聚對苯二甲酸乙二酯(PET)、聚萘二甲酸乙二酯(PEN)、聚甲基丙烯酸甲酯(PMMA)、聚碳酸脂(PC)、聚醚碸(PES)、 聚酯等所製之可撓塑膠基板。
進一步地，該含矽薄膜可直接於基板上形成。或者，大部分的導電層、介電層、絕緣層等也可於該基板與該含矽薄膜之間形成。
較佳地，根據本發明例示性實施態樣之用於沉積含矽薄膜的組合物可作為有機發光二極體(OLED)的封裝材料使用。
參照以下實施例對本發明進行詳細說明。本說明書及申請專利範圍所用之術語及字詞不應解釋為限於一般意義或字典上的定義，而應基於發明人可適當地定義該術語的概念來最適當地描述他或她所知用於實行本發明之最佳方法的原則下，將之解釋成與本發明技術範圍有關的意義及概念。
因此，在本說明書中之實施態樣中描述及圖式中所示之構型僅為最佳實施例，而非指本發明之所有技術想法，因此應了解的是，可能存在可替代以上構型之多種等效物及改質物。
進一步地，在以下所有實施例中，沉積係使用商業化200毫米單晶圓蓮蓬頭型(shower head type)ALD儀器(CN1,Atomic Premium)藉由本領域所知的電漿增強原子層沉積(PEALD)法進行。另外，沉積係使用商業化200毫米單晶圓蓮蓬頭型CVD(PECVD)儀器(CN1,Atomic Premium)藉由本領域所知的電漿增強化學氣相沉積(PECVD)法進行。
經沉積之含矽薄膜的厚度係使用橢圓偏光計(OPTI-PROBE 2600,THERMA-WAVE)量測，且所製造含矽薄膜的組成係使用紅外光譜(IFS66V/S & Hyperion 3000,Bruker Optics)及X射線光電光譜分析。
進一步地，階梯覆蓋性係使用穿透式電子顯微鏡(Tecnai F30 S-Twin,FET Korea)而確定。
[實施例1]雙(乙基甲基胺基矽基)胺的製備
在無水及惰性的氣氛下，將六甲基二矽氮烷(((CH3)3Si)2NH，1,695公克(10.5莫耳))及氯化鋁(AlCl3，7公克(0.05莫耳))置入5000毫升直火乾燥過的不鏽鋼.(Sus)反應器後，慢慢加入二氯矽烷(SiH2Cl2，2,121公克(21莫耳))同時攪拌所得混合物及維持溫度於-25℃。然後，於-10℃下攪拌反應溶液。攪拌該反應溶液3小時，藉由過濾從中移除氯化鋁(AlCl3)，然後藉由簡單蒸餾或減壓蒸餾移除所生成的氯三甲基矽烷((CH3)3SiCl)。在攪拌回收的雙(氯矽基)胺((SiH2Cl)2NH)溶液與正戊烷及維持溫度於-25℃的同時，慢慢加入乙基甲基胺((CH3CH2)CH3NH，676公克(11.44莫耳))。在加入完成後，將反應溶液慢慢的加熱至室溫並於室溫攪拌6小時。生成的白色固體藉由過濾移除，從而獲得一濾液。在減壓下從該濾液中移除溶劑，接著在減壓下蒸餾，從而獲得雙(乙基甲基胺基矽基)胺((SiH2NCH3(CH2CH3))2NH，200公克(1.04莫耳)，產率：33%)。
1H-NMR(CDCl3)：δ 2.52(s,6H,(SiH2NCH3(CH2CH3))2NH),δ 4.48(d,4H,(SiH2NCH3(CH2CH3))2NH),δ 1.04(t,6H,(SiH2NCH3(CH2CH3))2NH),δ 2.86(q,4H,(SiH2NCH3(CH2CH3))2NH)。
[實施例2]雙(二乙基胺基矽基)胺的製備
除了使用二乙基胺而非實施例1所用乙基甲基胺之外，以與實施例1同樣的方法製備雙(二乙基胺基矽基)胺。
1H-NMR(CDCl3)：δ 1.02(t,12H,(SiH2(N(CH2CH3)2))2NH),δ 2.89(q,8H,(SiH2(N(CH2CH3)2))2NH),δ 4.51(d,4H,(SiH2(N(CH2CH3)2))2NH)
[比較例1]雙(二乙基胺基)矽烷的製備
在無水及惰性的氣氛下，將二氯矽烷(SiH2Cl2，300公克(2.97莫耳))及正己烷(2,887公克(33.5莫耳))置入5000毫升直火乾燥過的不鏽鋼(Sus)反應器(高壓反應器)後，慢慢加入二乙基胺((CH3CH2)2NH，931公克(12.47莫耳))同時維持溫度於-25℃，攪拌所得混合物3小時，然後藉由過濾移除二乙基胺鹽酸鹽((CH3CH2)2NHHCl)，從而獲得一濾液。在減壓下從該濾液中移除溶劑，接著在減壓下蒸餾，從而獲得雙(二乙基胺基)矽烷(SiH2(N(CH2CH3)2)2，388公克(2.22莫耳)，產率：75%)。
1H-NMR(C6D6)：δ 0.98(t,12H,SiH2(N(CH2CH3)2)2),2.86(q,8H,SiH2(N(CH2CH3)2)2),4.71(s,2H,SiH2(N(CH2CH3)2)2)
[比較例2][雙(二乙基胺基二甲基矽基)]三甲基矽基胺的製備
在無水及惰性的氣氛下，將六甲基二矽氮烷(((CH3)3Si)2NH，250公克(1.55莫耳))及氯化鋁(AlCl3，10公克(0.075莫耳))置入2000毫升直火乾燥過的舒倫克瓶(Schlenk flask)後，慢慢加入二氯二甲基矽烷((CH3)2SiCl2，499.80公克(3.87莫耳))同時攪拌所得混合物及維持溫度於25℃。然後，將反應溶液慢慢升溫至40℃。攪拌該反應溶液3小時，然後藉由簡單蒸餾或減壓蒸餾移除所生成的氯三甲基矽烷((CH3)3SiCl)及過量添加的二氯二甲基矽烷((CH3)2SiCl2)。在攪拌回收的氯二甲基二矽氮烷(((CH3)2SiCl)2NH)溶液與己烷(C6H14)及維持溫度於-15℃的同時，慢慢加入二乙基胺((CH3CH2)2NH，475.45公克(6.5莫耳))。在加入完成後，將反應溶液慢慢的加熱至室溫並於室溫攪拌6小時。藉由過濾移除所生成的白色固體而獲得一濾液後，在減壓下從該濾液中移除溶劑。在放置回收的二乙基胺基二甲基二矽氮烷(((CH3)2SiN(CH2CH3)2)2NH)與正己烷(有機溶劑，200毫升)後，慢慢加入2.29M正丁基鋰(n-C4H9Li)的己烷(C6H14)溶液(202.16公克(0.65莫耳))，同時攪拌所得混合物及維持溫度於-15℃。在加入完成後，將反應溶液慢慢的加熱至室溫並攪拌12小時。然後，加入四氫呋喃(O(C2H2)2，200毫升)。慢慢加入氯三甲基矽烷(70.94公克(0.65莫耳))至該反應溶液同時維持溫度於-20℃。在加入完成後，慢慢加熱該反應溶液，然後攪拌12小時同時維持溫度於65℃。藉由過濾反應已終止的反應混合物以移除所生成的白色固體而獲得一濾液後，在減壓下從該濾液中移除溶劑，接著在減壓下蒸餾，從而獲得[雙(二乙基胺基二甲基矽基)]三甲基矽基胺((CH3)3SiN(Si(CH3)2N(CH2CH3)2)2，159公克(0.46莫耳)，產率：70%)。
1H-NMR(C6D6)：δ 0.30(s,12H,NSi(CH3)2N),0.32(s,9H,Si(CH3)3),0.99(t,12H,Si(NCH2CH3)2),2.82(q,8H,Si(NCH2CH3)2)
[實施例3]使用雙(乙基甲基胺基矽基)胺藉由PEALD製造氧化矽薄膜
薄膜的形成係使用根據本發明實施例1製備之矽烷胺化合物作為用於形成氧化矽薄膜的組合物，在一般的電漿增強原子層沉積(PEALD)儀器中使用本領域所知的電漿增強原子層沉積(PEALD)法。作為反應氣體，一氧化二氮係連同電漿一起使用，以及將對應於惰性氣體之氮氣用於沖洗。於反應氣體及0.5秒的電漿時間形成該薄膜。具體的沉積氧化矽薄膜之方法顯示於表1。
沉積薄膜的厚度係由橢圓偏光計量測，氧化矽薄膜的形成係使用紅外光譜分析，且氧化矽薄膜的組成係使用X射線光電光譜分析。進一步地，階梯覆蓋性係使用穿透式電子顯微鏡(TEM)確認。具體的氧化矽薄膜分析結果顯示於表2，以及使用紅外光譜分析沉積的薄膜所得的結果顯示於第2圖。
[比較例3]使用雙(二乙基胺基)矽烷藉由PEALD製造氧化矽薄膜
薄膜的形成係使用雙(二乙基胺基)矽烷化合物用於形成氧化矽薄膜，在一般的電漿增強原子層沉積(PEALD)儀器中使用本領域所知的電漿增強原子層沉積(PEALD)法。作為反應氣體，一氧化二氮係連同電漿一起使用，以及將對應於惰性氣體之氮氣用於沖洗。於反應氣體及0.5秒的電漿時間形成該薄膜。具體的沉積氧化矽薄膜之方法顯示於表1。
沉積薄膜的厚度係由橢圓偏光計量測，氧化矽薄膜的形成係使用紅外光譜分析，且氧化矽薄膜的組成係使用X射線光電光譜分析。進一步地，階梯覆蓋性係使用穿透式電子顯微鏡(TEM)確認。具體的氧化矽薄膜分析結果顯示於表2，以及使用紅外光譜分析沉積的薄膜所得的結果顯示於第2圖。
[比較例4]使用[雙(二乙基胺基二甲基矽基)]三甲基矽基胺藉由PEALD製造氧化矽薄膜
薄膜的形成係使用[雙(二乙基胺基二甲基矽基)]三甲基矽基胺化合物以形成氧化矽薄膜，在一般的電漿增強原子層沉積(PEALD)儀器中使用本領域所知的電漿增強原子層沉積(PEALD)法。作為反應氣體，一氧化二氮係連同電漿一起使用，以及將對應於惰性氣體之氮氣用於沖洗。於反應氣體及0.5秒的電漿時間形成該薄膜。具體的沉積氧化矽薄膜之方法顯示於表1。
沉積薄膜的厚度係由橢圓偏光計量測，氧化矽薄膜的形成係使用紅外光譜分析，且氧化矽薄膜的組成係使用X射線光電光譜分析。進一步地，階梯覆蓋性係使用穿透式電子顯微鏡(TEM)確認。具體的氧化矽薄膜分析結果顯示於表2，以及使用紅外光譜分析沉積的薄膜所得的結果顯示於第2圖。
如表2所示，可以理解的是，相較於比較例3及比較例4的氧化矽薄膜，使用含有根據本發明之矽烷胺化合物作為前驅物的用於沉積含 矽薄膜的組合物所製造的氧化矽薄膜，其具有優異的階梯覆蓋性同時具有優異的沉積速率。
也就是說，如表2及第3圖所示，在根據本發明實施例3之氧化矽薄膜中，折射率及O/Si組成比與比較例3及比較例4的類似，另，相較於比較例3及比較例4的氧化矽薄膜，實施例3之氧化矽薄膜則呈現優異沉積速率、顯著增加的薄膜厚度、以及優異階梯覆蓋性。

Claims (11)

  1. 一種由以下化學式1所示之矽烷胺化合物， 在化學式1中，R 1至R 4各自獨立為C1-C7烷基或C2-C7烯基，或者R 1與R 2及R 3與R 4各自彼此連結而形成一環。
  2. 如請求項1所述之矽烷胺化合物，其中在化學式1中，R 1至R 4各自獨立為C1-C5烷基或C2-C5烯基。
  3. 如請求項1所述之矽烷胺化合物，其中該化學式1所示之矽烷胺化合物係由以下化學式2或化學式3所示： 在化學式2及化學式3中，R 11至R 14各自獨立為C1-C5烷基或C2-C5烯基；以及n及m各自獨立為1至7之整數。
  4. 如請求項3所述之矽烷胺化合物，其中在化學式2或化學式3中，R 11 至R 14各自獨立為C1-C3烷基或C2-C3烯基；以及n及m各自獨立為1至4之整數。
  5. 如請求項1所述之矽烷胺化合物，其中該化學式1所示之矽烷胺化合物係選自以下化合物：
  6. 一種用於沉積含矽薄膜的組合物，該組合物包含如請求項1至5中任一項所述之矽烷胺化合物。
  7. 一種製造含矽薄膜的方法，其係使用如請求項6所述之用於沉積含矽薄膜的組合物。
  8. 如請求項7所述之方法，其中，藉由原子層沉積法、化學氣相沉積法、 金屬有機化學氣相沉積法、低壓化學氣相沉積法、電漿增強化學氣相沉積法、或電漿增強原子層沉積法進行沉積。
  9. 如請求項7所述之方法，其中該含矽薄膜係氧化矽薄膜、碳氧化矽(silicon oxy carbide)薄膜、氮化矽薄膜、氮氧化矽薄膜、碳氮化矽薄膜、或碳化矽薄膜。
  10. 如請求項7所述之方法，包含：a)將安裝於腔室中之基板的溫度維持於30℃至500℃；b)使該基板與如請求項6所述之組合物接觸，以將該組合物吸附於該基板中；以及c)將反應氣體注入至其中吸附有該組合物的該基板中，以形成含矽薄膜。
  11. 如請求項10所述之方法，其中該反應氣體係被50W至1000W之電漿功率所產生電漿活化後提供。
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