WO2009034596A1 - ケイ素含有被膜の製造方法、ケイ素含有被膜および半導体装置 - Google Patents

ケイ素含有被膜の製造方法、ケイ素含有被膜および半導体装置 Download PDF

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Publication number
WO2009034596A1
WO2009034596A1 PCT/JP2007/000981 JP2007000981W WO2009034596A1 WO 2009034596 A1 WO2009034596 A1 WO 2009034596A1 JP 2007000981 W JP2007000981 W JP 2007000981W WO 2009034596 A1 WO2009034596 A1 WO 2009034596A1
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Prior art keywords
silicic coating
silicic
coating
semiconductor device
producing
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PCT/JP2007/000981
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English (en)
French (fr)
Inventor
Yasushi Kobayashi
Kouta Yoshikawa
Yoshihiro Nakata
Tadahiro Imada
Shirou Ozaki
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Fujitsu Limited
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Application filed by Fujitsu Limited filed Critical Fujitsu Limited
Priority to JP2009531981A priority Critical patent/JP5218412B2/ja
Priority to PCT/JP2007/000981 priority patent/WO2009034596A1/ja
Priority to DE112007003638T priority patent/DE112007003638T5/de
Priority to KR1020107005252A priority patent/KR101130504B1/ko
Publication of WO2009034596A1 publication Critical patent/WO2009034596A1/ja
Priority to US12/700,215 priority patent/US8431464B2/en

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    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
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Abstract

　本発明に係るケイ素含有被膜は、密度が２．４ｇ／ｃｍ３以上のケイ素含有被膜であって、感光性官能基を有する少なくとも一種類のシラン系化合物を用いてケイ素含有被膜前駆体を形成し、その後に少なくとも一種類の光をこのケイ素含有被膜前駆体に照射することで得られる。本発明に係るケイ素含有被膜は、新規な半導体装置用のバリア膜やストッパ膜として使用できる。
PCT/JP2007/000981 2007-09-10 2007-09-10 ケイ素含有被膜の製造方法、ケイ素含有被膜および半導体装置 WO2009034596A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009531981A JP5218412B2 (ja) 2007-09-10 2007-09-10 ケイ素含有被膜の製造方法、ケイ素含有被膜および半導体装置
PCT/JP2007/000981 WO2009034596A1 (ja) 2007-09-10 2007-09-10 ケイ素含有被膜の製造方法、ケイ素含有被膜および半導体装置
DE112007003638T DE112007003638T5 (de) 2007-09-10 2007-09-10 Prozess zum Herstellen einer siliziumhaltigen Beschichtung, siliziumhaltige Beschichtung und Halbleitervorrichtung
KR1020107005252A KR101130504B1 (ko) 2007-09-10 2007-09-10 규소 함유 피막의 제조방법, 규소 함유 피막 및 반도체 장치
US12/700,215 US8431464B2 (en) 2007-09-10 2010-02-04 Process for producing silicic coating, silicic coating and semiconductor device

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Application Number Priority Date Filing Date Title
PCT/JP2007/000981 WO2009034596A1 (ja) 2007-09-10 2007-09-10 ケイ素含有被膜の製造方法、ケイ素含有被膜および半導体装置

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US12/700,215 Continuation US8431464B2 (en) 2007-09-10 2010-02-04 Process for producing silicic coating, silicic coating and semiconductor device

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JP (1) JP5218412B2 (ja)
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DE (1) DE112007003638T5 (ja)
WO (1) WO2009034596A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010137711A1 (ja) * 2009-05-29 2010-12-02 三井化学株式会社 半導体用シール組成物、半導体装置および半導体装置の製造方法
JP2014027228A (ja) * 2012-07-30 2014-02-06 Tokyo Electron Ltd 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム
JP2020516062A (ja) * 2017-03-29 2020-05-28 ディーエヌエフ カンパニー リミテッドＤＮＦ Ｃｏ． Ｌｔｄ． シリコン含有薄膜蒸着用組成物およびそれを用いたシリコン含有薄膜の製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102307127B1 (ko) * 2017-06-14 2021-10-05 삼성전자주식회사 반도체 소자

Citations (3)

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