TW201827418A - 化合物、樹脂、組成物、抗蝕圖型形成方法及電路圖型形成方法 - Google Patents

化合物、樹脂、組成物、抗蝕圖型形成方法及電路圖型形成方法 Download PDF

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Publication number
TW201827418A
TW201827418A TW106131477A TW106131477A TW201827418A TW 201827418 A TW201827418 A TW 201827418A TW 106131477 A TW106131477 A TW 106131477A TW 106131477 A TW106131477 A TW 106131477A TW 201827418 A TW201827418 A TW 201827418A
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Taiwan
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group
carbon atoms
compound
integer
substituent
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TW106131477A
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English (en)
Chinese (zh)
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越後雅敏
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日商三菱瓦斯化學股份有限公司
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Publication of TW201827418A publication Critical patent/TW201827418A/zh

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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D311/00—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only hetero atom, condensed with other rings
    • C07D311/02—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only hetero atom, condensed with other rings ortho- or peri-condensed with carbocyclic rings or ring systems
    • C07D311/78—Ring systems having three or more relevant rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C39/00—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring
    • C07C39/205—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring polycyclic, containing only six-membered aromatic rings as cyclic parts with unsaturation outside the rings
    • C07C39/21—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring polycyclic, containing only six-membered aromatic rings as cyclic parts with unsaturation outside the rings with at least one hydroxy group on a non-condensed ring
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
    • C08G8/20—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ with polyhydric phenols
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Pyrane Compounds (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
TW106131477A 2016-09-13 2017-09-13 化合物、樹脂、組成物、抗蝕圖型形成方法及電路圖型形成方法 TW201827418A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-178433 2016-09-13
JP2016178433 2016-09-13

Publications (1)

Publication Number Publication Date
TW201827418A true TW201827418A (zh) 2018-08-01

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Family Applications (1)

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TW106131477A TW201827418A (zh) 2016-09-13 2017-09-13 化合物、樹脂、組成物、抗蝕圖型形成方法及電路圖型形成方法

Country Status (5)

Country Link
JP (2) JP7452947B2 (ko)
KR (1) KR20190049731A (ko)
CN (1) CN109715591A (ko)
TW (1) TW201827418A (ko)
WO (1) WO2018052026A1 (ko)

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CN109715591A (zh) * 2016-09-13 2019-05-03 三菱瓦斯化学株式会社 化合物、树脂、组合物、以及抗蚀图案形成方法和电路图案形成方法
JPWO2020027206A1 (ja) * 2018-07-31 2021-08-12 三菱瓦斯化学株式会社 光学部品形成用組成物及び光学部品、並びに、化合物及び樹脂
US11650503B2 (en) 2018-08-02 2023-05-16 Tokyo Ohka Kogyo Co., Ltd. Hard mask-forming composition and method for manufacturing electronic component
TW202104175A (zh) * 2019-01-31 2021-02-01 日商三菱瓦斯化學股份有限公司 化合物、樹脂、組成物、阻劑圖型形成方法、回路圖型形成方法及樹脂之純化方法

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JP3774668B2 (ja) 2001-02-07 2006-05-17 東京エレクトロン株式会社 シリコン窒化膜形成装置の洗浄前処理方法
JP3685253B2 (ja) * 2001-02-23 2005-08-17 信越化学工業株式会社 シリコーン変性エポキシ樹脂又はシリコーン変性フェノール樹脂を含有する樹脂組成物、並びにこれを用いた半導体装置
JP3914493B2 (ja) 2002-11-27 2007-05-16 東京応化工業株式会社 多層レジストプロセス用下層膜形成材料およびこれを用いた配線形成方法
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JP4781280B2 (ja) 2006-01-25 2011-09-28 信越化学工業株式会社 反射防止膜材料、基板、及びパターン形成方法
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JP6515919B2 (ja) * 2014-03-13 2019-05-22 三菱瓦斯化学株式会社 レジスト組成物及びレジストパターン形成方法
CN104449670B (zh) * 2014-11-11 2016-05-25 山东大学 一种苯基呋喃类hERG钾离子通道的小分子荧光探针及其应用
KR101930803B1 (ko) * 2015-12-11 2018-12-20 주식회사 삼양사 티올-엔 반응을 이용한 에폭시 화합물 및 그 제조방법, 및 그 경화 생성물을 포함하는 유기-무기재료 복합체 및 그 복합체 제조방법
JP6763293B2 (ja) * 2016-01-07 2020-09-30 信越化学工業株式会社 アリール化合物及びその製造方法
JP6613901B2 (ja) * 2016-01-07 2019-12-04 信越化学工業株式会社 エポキシ変性シリコーン樹脂及びその製造方法、硬化性組成物及び電子部品
CN109715591A (zh) * 2016-09-13 2019-05-03 三菱瓦斯化学株式会社 化合物、树脂、组合物、以及抗蚀图案形成方法和电路图案形成方法

Also Published As

Publication number Publication date
JP7452947B2 (ja) 2024-03-19
JPWO2018052026A1 (ja) 2019-06-24
JP2022130463A (ja) 2022-09-06
KR20190049731A (ko) 2019-05-09
CN109715591A (zh) 2019-05-03
WO2018052026A1 (ja) 2018-03-22

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