TW201822942A - Cutting apparatus that suppresses water drops falling onto a cut object by providing an intermediate chamber between a cleansing section and a drying section - Google Patents

Cutting apparatus that suppresses water drops falling onto a cut object by providing an intermediate chamber between a cleansing section and a drying section Download PDF

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TW201822942A
TW201822942A TW106139040A TW106139040A TW201822942A TW 201822942 A TW201822942 A TW 201822942A TW 106139040 A TW106139040 A TW 106139040A TW 106139040 A TW106139040 A TW 106139040A TW 201822942 A TW201822942 A TW 201822942A
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cutting
cleaning
drying
cut
intermediate chamber
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TW106139040A
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TWI671157B (en
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山本裕子
東秀和
宇澤秀俊
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東和股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement

Abstract

The present invention provides a cutting apparatus. The cutting apparatus suppresses water drops falling onto a cut object by providing an intermediate chamber between a cleansing section and a drying section. The cutting apparatus (1) comprises: a cutting mechanism (11a, 11b) for cutting an object to be cut (2); a work table (9) for carrying a cut object (13) that is formed by using the cutting mechanism (11a, 11b) to cut the object to be cut (2); a cleansing section (15) for cleansing the cut object (13) carried on the work table (9); a drying section (16) for drying the cut object (13) on the work table (9) that is moved from the cleansing section(15); and an intermediate chamber (17) arranged between the cleansing section (15) and the drying section (16).

Description

切斷裝置Cutting device

本發明涉及一種對利用切斷機構切斷後的切斷物進行清洗及乾燥的切斷裝置。The present invention relates to a cutting device for washing and drying a cut object cut by a cutting mechanism.

一直以來,使用切斷裝置且通過切斷機構來切斷晶圓或封裝後基板等切斷對象。為了去除對切斷對象進行切斷時產生的切屑或污染物等,對切斷後的切斷物進行清洗及乾燥。例如,公開了使用清洗機構來清洗加工後的被加工物的切削裝置(參照專利文獻1)。Conventionally, cutting objects such as wafers or packaged substrates are cut by a cutting device using a cutting mechanism. In order to remove chips, contaminants, and the like generated when cutting the cutting object, the cut object after the cutting is washed and dried. For example, a cutting device for cleaning a processed object using a cleaning mechanism is disclosed (see Patent Document 1).

專利文獻1:日本專利公開2013-80811號公報Patent Document 1: Japanese Patent Publication No. 2013-80811

但是,在專利文獻1公開的切削裝置1中產生如下問題。如專利文獻1的圖3所示,清洗乾燥噴嘴89被設置在下表面敞開的立方體狀的殼體82內,並且向被加工物W噴射清洗水及乾燥空氣。清洗乾燥噴嘴89經由切換閥96與清洗水供給源94及乾燥空氣供給源95連接。通過切換閥96的切換,向清洗乾燥噴嘴89選擇性地供給清洗水及乾燥空氣。通過使清洗乾燥噴嘴89在殼體82內往復移動,從而對被加工物W進行清洗及乾燥。However, the cutting device 1 disclosed in Patent Document 1 causes the following problems. As shown in FIG. 3 of Patent Document 1, the washing and drying nozzle 89 is provided in a cube-shaped case 82 having an open lower surface, and sprays washing water and drying air toward the workpiece W. The washing and drying nozzle 89 is connected to a washing water supply source 94 and a drying air supply source 95 via a switching valve 96. When the switching valve 96 is switched, the washing water and the drying air are selectively supplied to the washing and drying nozzle 89. The washing and drying nozzle 89 is reciprocated within the casing 82 to wash and dry the workpiece W.

如此,由於通過選擇性的切換從清洗乾燥噴嘴89噴射清洗水及乾燥空氣,因此有可能在被加工物W的乾燥過程中再次向被加工物W噴射殘留在噴嘴內及管道內的清洗水。另外,有可能在清洗過程中從被加工物W飛濺的清洗水及成為霧狀的清洗水附著在殼體82內的頂壁或內壁等上,並在乾燥過程中該清洗水成為水滴而下落到被加工物W上。因此,有可能在被加工物W的表面上形成水滴痕跡(水痕)而作為污跡殘留。另外,有可能產生因水滴下落導致的乾燥不良。As described above, since the washing water and the drying air are sprayed from the washing and drying nozzle 89 by selective switching, it is possible to spray the washing water remaining in the nozzle and the pipe to the workpiece W again during the drying process of the workpiece W. In addition, the washing water splashed from the workpiece W and the washing water in a mist form may adhere to the top wall or the inner wall of the case 82 during the washing process, and the washing water may become water droplets during the drying process Drop on the workpiece W. Therefore, there is a possibility that a water mark (water mark) is formed on the surface of the workpiece W and remains as a stain. In addition, there is a possibility that defective drying due to water drops may occur.

本發明是為了解決上述問題而提出的,其目的在於提供一種切斷裝置,該切斷裝置藉由在清洗部與乾燥部之間設置中間室而抑制水滴下落到切斷物上。The present invention has been made in order to solve the above-mentioned problems, and an object thereof is to provide a cutting device that suppresses water droplets from falling on a cutting object by providing an intermediate chamber between a cleaning section and a drying section.

為解決上述問題,本發明所涉及的切斷裝置包括:切斷機構,用於對切斷對象進行切斷;工作臺,用於載置切斷物,該切斷物由所述切斷機構對切斷對象進行切斷而成;清洗部,用於清洗所述工作臺上的切斷物;乾燥部,用於對從所述清洗部移動來的所述工作臺上的所述切斷物進行乾燥;和中間室,被設置在所述清洗部與所述乾燥部之間。In order to solve the above-mentioned problem, the cutting device according to the present invention includes a cutting mechanism for cutting a cutting object, and a table for placing a cutting object, and the cutting object is provided by the cutting mechanism. The cutting object is cut; a cleaning part is used to clean the cut object on the workbench; a drying part is used to cut the cut on the workbench moved from the cleaning part The object is dried; and an intermediate chamber is provided between the washing section and the drying section.

根據本發明,切斷裝置通過在清洗部與乾燥部之間設置中間室而抑制水滴下落到切斷物上。According to the present invention, the cutting device suppresses water droplets from falling on the cutting object by providing an intermediate chamber between the cleaning section and the drying section.

下面,參照附圖對本發明所涉及的實施方式進行說明。本申請文書中的任一幅圖為了易於理解均進行適當省略或誇張以示意性地描繪。對相同的結構要素使用相同的附圖標記,並適當省略說明。此外,在本申請文書中,“支撐部件”為用於支撐晶片、絕緣膜、導電膜或半導體膜等支撐體物件的部件,可列舉玻璃環氧基板、陶瓷基板、樹脂基板和金屬基板等的一般基板、引線框以及半導體晶圓等。Hereinafter, embodiments of the present invention will be described with reference to the drawings. Any figure in this application document is appropriately omitted or exaggerated for schematic understanding. The same reference numerals are used for the same constituent elements, and descriptions thereof are appropriately omitted. In addition, in this document, the "support member" is a member for supporting a support object such as a wafer, an insulating film, a conductive film, or a semiconductor film, and examples thereof include glass epoxy substrates, ceramic substrates, resin substrates, and metal substrates. General substrates, lead frames, and semiconductor wafers.

[實施例1][Example 1]

(切斷裝置的結構)(Structure of the cutting device)

參照圖1對本發明所涉及的切斷裝置的結構進行說明。如圖1所示,切斷裝置1為例如對具有大面積的切斷對象進行切斷而單片化為多個區域的裝置。切斷裝置1包括分別作為結構要素的用於供給切斷對象的供給模組A、用於對切斷對象進行切斷的切斷模組B和用於檢查切斷後的切斷物的檢查模組C。各結構要素(各模組A~C)分別相對於其他結構要素能夠裝卸,並且能夠更換。此外,在此“具有大面積的切斷對象”例如為四邊為200mm以上、250mm以上或300mm以上的四邊形或者直徑為200mm以上、250mm以上或300mm以上的圓形的切斷對象。A configuration of a cutting device according to the present invention will be described with reference to FIG. 1. As shown in FIG. 1, the cutting device 1 is a device that cuts a cutting object having a large area and singulates it into a plurality of regions, for example. The cutting device 1 includes, as constituent elements, a supply module A for supplying a cutting object, a cutting module B for cutting the cutting object, and an inspection mold for inspecting a cut object after the cutting. Group C. Each component (each module A to C) can be attached to and detached from other components, and can be replaced. Here, the “cutting object having a large area” is, for example, a quadrangular shape having four sides of 200 mm or more, 250 mm or more, or 300 mm or more, or a circular cutting object having a diameter of 200 mm or more, 250 mm or more, or 300 mm or more.

利用切斷裝置1對作為切斷對象的具有樹脂部的支撐部件或完成半導體前工序(擴散工序及佈線工序)後的半導體晶圓等進行切斷而單片化。作為具有樹脂部的支撐部件,例如可列舉對安裝在基板上的晶片進行樹脂封裝後的封裝後基板或對安裝在半導體晶圓上的晶片進行樹脂封裝後的封裝後晶圓等。還可以對成型樹脂部之前的支撐部件本身進行切斷。在實施例1中,關於對作為切斷對象的封裝後基板進行切斷而單片化的情況進行說明。此外,切斷對象還可以是形成有元件的半導體晶圓。The cutting device 1 is used to cut a support member having a resin portion as a cutting target, or a semiconductor wafer after completion of a pre-semiconductor process (diffusion process and wiring process), and the like is singulated. Examples of the support member having a resin portion include a packaged substrate after resin-sealing a wafer mounted on a substrate, and a packaged wafer after resin-sealing a wafer mounted on a semiconductor wafer. It is also possible to cut the support member itself before molding the resin portion. In the first embodiment, a case where the packaged substrate to be cut is cut and singulated is described. The cutting target may be a semiconductor wafer on which an element is formed.

封裝後基板具有:基板;多個晶片,被安裝在基板所具有的多個區域上;和封裝樹脂,以一併覆蓋多個區域的方式成型。藉由切斷封裝後基板而單片化的各區域分別相當於產品。The packaged substrate includes: a substrate; a plurality of wafers, which are mounted on a plurality of regions of the substrate; and an encapsulating resin, which is molded so as to cover a plurality of regions together. Each area singulated by cutting the packaged substrate is equivalent to a product.

在供給模組A中設置有:切斷對象供給機構3,用於供給相當於切斷對象的封裝後基板2;切斷對象載置部4,用於轉交封裝後基板2;和運送機構5,用於運送封裝後基板2。運送機構5能夠沿X方向、Y方向及Z方向移動。在切斷對象載置部4上定位封裝後基板2之後,通過運送機構5將封裝後基板2運送至切斷模組B。The supply module A is provided with a cutting target supply mechanism 3 for supplying the packaged substrate 2 corresponding to the cutting target, a cutting target placement section 4 for transferring the packaged substrate 2, and a transport mechanism 5 For transporting the packaged substrate 2. The transport mechanism 5 can move in the X direction, the Y direction, and the Z direction. After positioning the packaged substrate 2 on the cutting target placement section 4, the packaged substrate 2 is transferred to the cutting module B by the transfer mechanism 5.

在切斷模組B中設置有:對準區域6,用於在封裝後基板2上設定假想的切斷線;切斷區域7,用於切斷封裝後基板2使之單片化;和清洗乾燥區域8,用於對經單片化的切斷物進行清洗及乾燥。The cutting module B is provided with: an alignment area 6 for setting an imaginary cutting line on the packaged substrate 2; a cutting area 7 for cutting and packaging the packaged substrate 2 into a single piece; and The washing and drying area 8 is used for washing and drying the singulated cut object.

對於切斷模組B而言,在對準區域6中設置有用於載置封裝後基板2的切斷用工作臺9。切斷用工作臺9通過移動機構(未圖示)能夠沿圖中的Y方向移動。切斷用工作臺9能夠在對準區域6、清洗乾燥區域8和切斷區域7之間移動。並且,切斷用工作臺9通過旋轉機構(未圖示)能夠沿θ方向旋轉。例如,還可以在切斷用工作臺9上安裝切斷用夾具(未圖示),並且在切斷用夾具上載置封裝後基板2。In the cutting module B, a cutting table 9 for placing the packaged substrate 2 in the alignment area 6 is provided. The cutting table 9 can be moved in the Y direction in the figure by a moving mechanism (not shown). The cutting table 9 is movable between the alignment area 6, the washing and drying area 8, and the cutting area 7. The cutting table 9 can be rotated in the θ direction by a rotation mechanism (not shown). For example, a cutting jig (not shown) may be attached to the cutting table 9, and the packaged substrate 2 may be placed on the cutting jig.

在對準區域6中設置有對準用照相機10。對準用照相機10能夠獨立地沿X方向移動。通過對準用照相機10沿X方向移動,並且切斷用工作臺9沿Y方向移動,從而測量形成在封裝後基板2上的對準標誌的座標位置。由此,沿X方向及Y方向假想地設定封裝後基板2的切斷線。An alignment camera 6 is provided in the alignment area 6. The alignment camera 10 can move independently in the X direction. By moving the alignment camera 10 in the X direction and the cutting stage 9 in the Y direction, the coordinate position of the alignment mark formed on the packaged substrate 2 is measured. Thereby, the cutting line of the board | substrate 2 after encapsulation is set imaginarily in the X direction and the Y direction.

在切斷區域7中設置有作為切斷機構的兩個心軸11a、11b。切斷裝置1為設置有兩個心軸11a、11b的雙心軸結構的切斷裝置。心軸11a、11b能夠獨立地沿X方向及Z方向移動。在心軸11a、11b上分別安裝有旋轉刃12a、12b。在心軸11a、11b上分別設置有用於噴射切削水的切削水用噴嘴和用於噴射冷卻水的冷卻水用噴嘴(未圖示),以抑制因高速旋轉的旋轉刃12a、12b而產生的摩擦熱。通過使切斷用工作臺9和心軸11a、11b相對移動而切斷封裝後基板2。旋轉刃12a、12b通過在與X軸正交的平面的面內旋轉而切斷封裝後基板2。The cutting region 7 is provided with two mandrels 11 a and 11 b as a cutting mechanism. The cutting device 1 is a cutting device of a double mandrel structure provided with two mandrels 11a and 11b. The mandrels 11a and 11b can move independently in the X direction and the Z direction. Rotating blades 12a and 12b are attached to the mandrels 11a and 11b, respectively. The mandrels 11a and 11b are respectively provided with a cutting water nozzle for spraying cutting water and a cooling water nozzle (not shown) for spraying cooling water, so as to suppress friction caused by the high-speed rotating blades 12a and 12b heat. The post-package substrate 2 is cut by moving the cutting table 9 and the spindles 11 a and 11 b relatively. The rotating blades 12 a and 12 b cut the post-package substrate 2 by rotating in a plane of a plane orthogonal to the X axis.

也可以將切斷裝置1設為在切斷區域7中設置有一個心軸的單心軸結構的切斷裝置。在切斷大面積切斷對象時,由於旋轉刃所切斷的切斷對象的總距離非常長,因此較佳地通過設置兩個心軸而高效地對切斷對象進行切斷。The cutting device 1 may be a cutting device having a single spindle structure in which one spindle is provided in the cutting region 7. When cutting a large-area cutting object, since the total distance of the cutting object cut by the rotary blade is very long, it is preferable to efficiently cut the cutting object by providing two mandrels.

在清洗乾燥區域8中設置有清洗乾燥機構14,該清洗乾燥機構14對作為由心軸11a、11b切斷後的切斷物的切斷後基板13進行清洗及乾燥。清洗乾燥機構14具備:清洗部15,用於清洗經切斷的切斷後基板13;和乾燥部16,用於對已清洗的切斷後基板13進行乾燥。在清洗部15與乾燥部16之間設置有中間室17,該中間室17構造由清洗部15及乾燥部16各自的分隔壁劃分的空間。通過使切斷用工作臺9在清洗乾燥機構14的下方沿Y方向往復移動,從而對切斷後基板13進行清洗及乾燥。在後述的參照圖2~4的部分對清洗乾燥機構14進行詳細說明。In the washing and drying area 8, a washing and drying mechanism 14 is provided. The washing and drying mechanism 14 cleans and dries the substrate 13 after cutting, which is a cutting object cut by the mandrels 11 a and 11 b. The cleaning and drying mechanism 14 includes a cleaning section 15 for cleaning the cut and cut substrate 13 and a drying section 16 for drying the cleaned and cut substrate 13. An intermediate chamber 17 is provided between the cleaning unit 15 and the drying unit 16, and the intermediate chamber 17 has a space divided by partition walls of the cleaning unit 15 and the drying unit 16. The cutting table 9 is moved back and forth in the Y direction below the cleaning and drying mechanism 14 to clean and dry the cut substrate 13. The washing and drying mechanism 14 will be described in detail below with reference to FIGS. 2 to 4.

在檢查模組C中設置有檢查用工作臺18。移載有切斷後基板13被轉移並載置於檢查用工作臺18上。該切斷後基板13為通過切斷封裝後基板2而單片化的產品P的集合體。通過運送機構19將切斷後基板13從切斷用工作臺9轉移並載置於檢查用工作臺18上。運送機構19能夠沿X方向、Y方向及Z方向移動。The inspection module C is provided with an inspection table 18. The substrate 13 is transferred after being cut and placed on the inspection table 18. The post-cut substrate 13 is an aggregate of products P that are singulated by cutting the post-package substrate 2. The post-cut substrate 13 is transferred from the cutting table 9 by the transport mechanism 19 and placed on the inspection table 18. The transport mechanism 19 can move in the X direction, the Y direction, and the Z direction.

在檢查模組C中,例如通過檢查用照相機20來檢查多個產品P。檢查用照相機20能夠沿X方向及Y方向移動。檢查後的產品P被篩選為合格品和次品。合格品被收容在合格品托盤21上。次品被收容在次品托盤22上。In the inspection module C, for example, a plurality of products P are inspected by the inspection camera 20. The inspection camera 20 can move in the X direction and the Y direction. The inspected product P is screened as a qualified product and a defective product. Good products are stored on the good product tray 21. Defective products are contained on the defective product tray 22.

在供給模組A中設置有控制部CTL。控制部CTL用於控制切斷裝置1的操作、封裝後基板2的運送、封裝後基板2的對位、封裝後基板2的切斷、切斷後基板13的清洗及乾燥、切斷後基板13的運送和切斷後基板13的檢查等。在本實施例中,將控制部CTL設置在供給模組A中。不限於此,也可以將控制部CTL設置在其他模組中。另外,還可以將控制部CTL分割為多個控制部而設置在供給模組A、切斷模組B和檢查模組C中的至少兩個模組中。A control unit CTL is provided in the supply module A. The control unit CTL is used to control the operation of the cutting device 1, the transportation of the packaged substrate 2, the alignment of the packaged substrate 2, the cutting of the packaged substrate 2, the cleaning and drying of the packaged substrate 13, and the Inspection and the like of the substrate 13 after transportation and cutting. In this embodiment, the control section CTL is provided in the supply module A. Not limited to this, the control section CTL may be provided in another module. In addition, the control unit CTL may be divided into a plurality of control units and provided in at least two modules among the supply module A, the cutting module B, and the inspection module C.

此外,在圖1中,由於示出對作為切斷對象的封裝後基板2進行切斷的例,因此將切斷對象載置部4、切斷用工作臺9及檢查用工作臺18設為矩形(正方形)形狀。不限於此,如果所處理的切斷對象例如為半導體晶圓,則也可以將切斷對象載置部4、切斷用工作臺9及檢查用工作臺18設為圓形形狀。In addition, in FIG. 1, an example of cutting the packaged substrate 2 as a cutting target is shown. Therefore, the cutting target mounting portion 4, the cutting table 9, and the inspection table 18 are set as Rectangle (square) shape. Without being limited to this, if the cutting target to be processed is, for example, a semiconductor wafer, the cutting target mounting section 4, the cutting table 9, and the inspection table 18 may be circular.

(清洗乾燥機構的結構)(Structure of washing and drying mechanism)

參照圖2對在圖1所示的切斷裝置1中使用的實施例1的清洗乾燥機構14的結構進行說明。The configuration of the washing and drying mechanism 14 of the first embodiment used in the cutting device 1 shown in FIG. 1 will be described with reference to FIG. 2.

如圖2的(a)所示,清洗乾燥機構14具備:清洗部15,用於清洗經切斷的切斷後基板13;乾燥部16,用於對已清洗的切斷後基板13進行乾燥;和中間室17,被設置在清洗部15與乾燥部16之間。在俯視時,清洗乾燥機構14具有長度L1及寬度W的大小。清洗乾燥機構14的寬度W被設定為大於切斷用工作臺9的寬度。切斷用工作臺9在清洗乾燥機構14的下方沿Y方向往復移動。As shown in (a) of FIG. 2, the cleaning and drying mechanism 14 includes a cleaning section 15 for cleaning the cut and cut substrate 13, and a drying section 16 for drying the cleaned and cut substrate 13; and The intermediate chamber 17 is provided between the washing section 15 and the drying section 16. The washing and drying mechanism 14 has a length L1 and a width W in a plan view. The width W of the washing and drying mechanism 14 is set larger than the width of the cutting table 9. The cutting table 9 moves back and forth in the Y direction below the washing and drying mechanism 14.

如圖2的(b)、(c)所示,在清洗乾燥機構14的下方形成有供切斷用工作臺9及載置在切斷用工作臺9上的切斷後基板13移動的移動空間23。切斷用工作臺9例如使用滾珠絲杠機構等移動機構(未圖示)而在移動空間23中沿Y方向往復移動。As shown in (b) and (c) of FIG. 2, a moving space for moving the cutting table 9 and the cut-off substrate 13 placed on the cutting table 9 is formed below the cleaning and drying mechanism 14. twenty three. The cutting table 9 uses a moving mechanism (not shown) such as a ball screw mechanism to reciprocate in the Y direction in the moving space 23.

移動空間23為如下空間:通過構造清洗部15、乾燥部16及中間室17的各個外周的側壁板來包圍移動空間23的至少一部分,並且以清洗乾燥機構14的下端為基準面具有高度h1。如果移動空間23還包含清洗部15、乾燥部16及中間室17各自的壁厚,則移動空間23為長度L1×寬度W×高度h1的長方體狀的空間。此外,在以清洗乾燥機構14的下端為基準面的情況下,中間室17的高度為h2,乾燥部16的高度為h3,清洗部15的高度為h4。這些高度之間的關係為h4>h3>h2>h1。The moving space 23 is a space that surrounds at least a part of the moving space 23 by constructing side wall plates on the outer periphery of the washing unit 15, the drying unit 16 and the intermediate chamber 17, and has a height h1 with the lower end of the washing and drying mechanism 14 as a reference plane. If the moving space 23 further includes the wall thickness of each of the washing unit 15, the drying unit 16, and the intermediate chamber 17, the moving space 23 is a rectangular parallelepiped space having a length L1 × width W × h1. When the lower end of the washing and drying mechanism 14 is used as a reference plane, the height of the intermediate chamber 17 is h2, the height of the drying unit 16 is h3, and the height of the washing unit 15 is h4. The relationship between these heights is h4> h3> h2> h1.

清洗部15具備:清洗室24,在下方具有開口部;和清洗機構25,被收容在清洗室24內。清洗室24和中間室17通過構造清洗部15的中間室側分隔壁26來分隔。通過使切斷後基板13在清洗室24及中間室17下方的移動空間23內往復移動,從而利用清洗機構25來清洗切斷後基板13的整個面。The cleaning unit 15 includes a cleaning chamber 24 having an opening portion below, and a cleaning mechanism 25 housed in the cleaning chamber 24. The cleaning chamber 24 and the intermediate chamber 17 are separated by an intermediate-chamber-side partition wall 26 constituting the cleaning unit 15. By reciprocating the cut substrate 13 in the moving space 23 below the cleaning chamber 24 and the intermediate chamber 17, the entire surface of the cut substrate 13 is cleaned by the cleaning mechanism 25.

作為清洗機構25,例如使用用於噴射清洗液27的噴射清洗機構(噴霧清洗)。噴霧清洗為使用由單流體或雙流體構成的噴嘴進行的清洗。在單流體噴嘴的情況下,從噴嘴的前端朝向切斷後基板13噴射清洗液27。作為清洗液27,較佳地使用純水、碳酸水或臭氧水等。在雙流體噴嘴的情況下,向清洗液27中供給壓縮空氣或氮氣等的氣體。混合有氣體的清洗液27成為微小的霧狀粒子並朝向切斷後基板13噴射。另外,也可以對從清洗機構25噴射出的清洗液27施加超聲波而噴射。可以任意設定噴射清洗液27的方向和角度等。As the cleaning mechanism 25, for example, a spray cleaning mechanism (spray cleaning) for spraying the cleaning liquid 27 is used. Spray cleaning is cleaning using a nozzle composed of a single fluid or a dual fluid. In the case of a single-fluid nozzle, the cleaning liquid 27 is sprayed from the tip of the nozzle toward the cut-off substrate 13. As the cleaning liquid 27, pure water, carbonated water, ozone water, or the like is preferably used. In the case of a two-fluid nozzle, a gas such as compressed air or nitrogen is supplied to the cleaning liquid 27. The cleaning liquid 27 mixed with the gas becomes fine mist particles and is sprayed toward the cut substrate 13. Alternatively, the cleaning liquid 27 sprayed from the cleaning mechanism 25 may be sprayed by applying ultrasonic waves. The direction and angle of spraying the cleaning liquid 27 can be arbitrarily set.

在對具有大面積的切斷後基板13進行清洗的情況下,為了一併清洗切斷後基板13的整個面,較佳地使用寬度比多個清洗機構25或切斷後基板13的寬度更寬且具備狹縫狀噴嘴或多孔式噴嘴的清洗機構25。此外,也可以將清洗機構25設置為能夠朝向切斷後基板13沿左右或上下方向自動變更噴嘴朝向的結構。如圖2的(b)所示,較佳地從清洗室24朝向與中間室17相反的一側方向噴射清洗液27。較佳地設置成從清洗機構25噴射出的清洗液27、附著在清洗室24的內壁上的水滴以及產生在清洗室24內的霧沫不會進入中間室17中。In the case of cleaning the cut substrate 13 having a large area, in order to clean the entire surface of the cut substrate 13 together, it is preferable to use a wider width than the plurality of cleaning mechanisms 25 or the cut substrate 13 and to provide Slit nozzle or porous nozzle cleaning mechanism 25. In addition, the cleaning mechanism 25 may be provided in a structure capable of automatically changing the nozzle orientation in the left-right or up-down direction toward the cut substrate 13. As shown in FIG. 2 (b), the cleaning liquid 27 is preferably sprayed from the cleaning chamber 24 in a direction opposite to the intermediate chamber 17. The cleaning liquid 27 sprayed from the cleaning mechanism 25, the water droplets adhering to the inner wall of the cleaning chamber 24, and the mist generated in the cleaning chamber 24 are preferably prevented from entering the intermediate chamber 17.

乾燥部16具備:乾燥室28,在下方具有開口部;和乾燥機構29,被收容在乾燥室28內。乾燥室28和中間室17通過構造乾燥部16的中間室側分隔壁30來分隔。通過使切斷後基板13在乾燥室28及中間室17下方的移動空間23內往復移動,從而利用乾燥機構29對切斷後基板13的整個面進行乾燥。The drying unit 16 includes a drying chamber 28 having an opening portion below, and a drying mechanism 29, and is housed in the drying chamber 28. The drying chamber 28 and the intermediate chamber 17 are separated by an intermediate-chamber-side partition wall 30 constituting the drying section 16. By reciprocating the cut substrate 13 in the moving space 23 below the drying chamber 28 and the intermediate chamber 17, the entire surface of the cut substrate 13 is dried by the drying mechanism 29.

作為乾燥機構29,例如使用氣刀除水乾燥,該氣刀除水乾燥通過朝向切斷後基板13吹拂壓縮空氣或氮氣等的氣體31而從切斷後基板13的表面吹跑清洗液27。氣刀除水乾燥可形成寬度大且狹小的空氣流,並以強勁的噴出力吹跑清洗液27。可以任意設定吹拂氣體31的方向和角度等。As the drying mechanism 29, for example, an air-knife dewatering dryer is used, which blows a cleaning liquid 27 from the surface of the cut-off substrate 13 by blowing a gas 31 such as compressed air or nitrogen gas toward the cut-off substrate 13. The air knife dewatering and drying can form a wide and narrow air flow, and blow off the cleaning liquid 27 with a strong spraying force. The direction, angle, and the like of the blowing gas 31 can be arbitrarily set.

在使用氣刀的情況下,較佳地將該氣刀的寬度設為大於切斷後基板13的寬度,以使切斷後基板13的整個面一併乾燥。此外,也可以將氣刀設為能夠沿左右或上下方向自動變更氣刀的噴射口朝向的結構。關於從乾燥機構29噴射出的氣體31,可以從乾燥室28朝向與中間室17相反的一側方向噴射該氣體31,也可以從乾燥室28朝向中間室17的方向噴射該氣體31。或者,還可以向正下方噴射該氣體31。只要為從乾燥室28朝向下方吹跑切斷後基板13上的清洗液27的結構即可。When an air knife is used, the width of the air knife is preferably larger than the width of the substrate 13 after cutting so that the entire surface of the substrate 13 after cutting is dried together. In addition, the air knife may have a structure capable of automatically changing the direction of the jet port of the air knife in the left-right or up-down direction. The gas 31 ejected from the drying mechanism 29 may be ejected from the drying chamber 28 in a direction opposite to the intermediate chamber 17, or may be ejected from the drying chamber 28 toward the intermediate chamber 17. Alternatively, the gas 31 may be injected directly below. It suffices that the cleaning liquid 27 on the cut substrate 13 is blown downward from the drying chamber 28.

在清洗乾燥機構14中,清洗機構25和乾燥機構29的各自只要為一併清洗及乾燥由沿切斷後基板13的寬度方向排列的多個產品P組成的集合體的形式即可。並且,較佳地清洗乾燥機構14為如下結構:在對切斷後基板13的乾燥過程中或乾燥之後,抑制附著在清洗乾燥機構14(具體而言,清洗室24及中間室17)的內壁等上的水滴下落到切斷後基板13上。In the cleaning and drying mechanism 14, each of the cleaning mechanism 25 and the drying mechanism 29 may be in the form of an assembly composed of a plurality of products P aligned in the width direction of the substrate 13 after cutting and drying together. In addition, it is preferable that the cleaning and drying mechanism 14 has a structure that suppresses adhesion to the inner walls of the cleaning and drying mechanism 14 (specifically, the cleaning chamber 24 and the intermediate chamber 17) during or after drying the cut substrate 13. The water drops on the substrate fall onto the substrate 13 after the cutting.

(清洗乾燥機構的操作)(Operation of cleaning and drying mechanism)

參照圖3~圖4說明通過清洗乾燥機構14來清洗及乾燥切斷後基板13的操作。The operation of cleaning and drying the cut substrate 13 by the cleaning and drying mechanism 14 will be described with reference to FIGS. 3 to 4.

如圖3的(a)、(b)所示,為了清洗切斷後基板13,使用移動機構(未圖示)來使切斷用工作臺9在清洗室24的下方沿Y方向往復移動。當載置在切斷用工作臺9上的切斷後基板13通過清洗室24的下方時,通過從多個清洗機構25向切斷後基板13噴射清洗液27而清洗切斷後基板13。例如,可通過使切斷用工作臺9從S1位置到S2位置沿Y方向往復移動規定的距離D,從而利用多個清洗機構25來清洗切斷後基板13的整個面。通過多個清洗機構25來去除殘留在切斷後基板13上的切屑或污染物等。As shown in FIGS. 3A and 3B, in order to clean the cut substrate 13, a moving mechanism (not shown) is used to reciprocate the cutting table 9 below the cleaning chamber 24 in the Y direction. When the post-cut substrate 13 placed on the cutting table 9 passes under the cleaning chamber 24, the post-cut substrate 13 is cleaned by spraying a cleaning liquid 27 from the plurality of cleaning mechanisms 25 to the post-cut substrate 13. For example, the entire surface of the substrate 13 after cutting can be cleaned by a plurality of cleaning mechanisms 25 by reciprocating the cutting table 9 from the S1 position to the S2 position in the Y direction by a predetermined distance D. Chips, contaminants, and the like remaining on the substrate 13 after cutting are removed by a plurality of cleaning mechanisms 25.

清洗機構25使用利用了由單流體或雙流體構成的噴嘴進行的噴霧清洗。在單流體噴嘴的情況下,有時從噴嘴的前端噴射出的清洗液27的一部分從切斷後基板13飛濺並附著在清洗室24的內壁或清洗機構25上而成為水滴。附著在清洗室24的內壁或清洗機構25上的水滴有可能會隨時間的經過而向下方下落。The cleaning mechanism 25 uses spray cleaning using a nozzle composed of a single fluid or a dual fluid. In the case of a single-fluid nozzle, a part of the cleaning liquid 27 ejected from the tip of the nozzle may splash from the cut substrate 13 and adhere to the inner wall of the cleaning chamber 24 or the cleaning mechanism 25 to become water droplets. Water droplets adhering to the inner wall of the cleaning chamber 24 or the cleaning mechanism 25 may fall downward with the passage of time.

在雙流體噴嘴的情況下,向清洗液27中供給壓縮空氣或氮氣等的氣體。混合有氣體的清洗液27成為微小的霧狀粒子(霧沫)並朝向切斷後基板13噴射。霧沫有可能會附著在清洗室24的內壁或頂棚上並凝聚成水滴。附著在清洗室24的內壁或頂棚上的水滴有可能會隨時間的經過而向下方下落。此外,雖然雙流體噴嘴更易於產生霧沫,但即使是單流體噴嘴有時也會產生霧沫。In the case of a two-fluid nozzle, a gas such as compressed air or nitrogen is supplied to the cleaning liquid 27. The gas-containing cleaning liquid 27 becomes fine mist particles (fog) and is sprayed toward the substrate 13 after cutting. The mist may adhere to the inner wall or ceiling of the cleaning chamber 24 and condense into water droplets. Water droplets adhering to the inner wall or ceiling of the cleaning chamber 24 may fall downward with the passage of time. In addition, although two-fluid nozzles are more prone to misting, even single-fluid nozzles sometimes produce misting.

如此,在使用噴霧清洗的情況下,附著在清洗室24的內壁或頂棚及清洗機構25上的水滴有可能會隨時間的經過而向下方下落。因此,較佳地清洗乾燥機構14為如下結構:在對切斷後基板13進行乾燥時或進行乾燥之後,抑制水滴下落到切斷後基板13上。As described above, when spray cleaning is used, water droplets adhering to the inner wall or ceiling of the cleaning chamber 24 and the cleaning mechanism 25 may fall downward with the passage of time. Therefore, it is preferable that the cleaning and drying mechanism 14 has a structure in which, when or after the cut substrate 13 is dried, water droplets are prevented from falling on the cut substrate 13.

如圖4的(a)、(b)所示,為了對已清洗的切斷後基板13進行乾燥,使用移動機構(未圖示)來使切斷用工作臺9在乾燥室28的下方沿Y方向往復移動。當載置在切斷用工作臺9上的切斷後基板13通過乾燥室28的下方時,從乾燥機構29向切斷後基板13吹拂壓縮空氣或氮氣等的氣體31而從切斷後基板13的表面吹跑清洗液27。例如,通過使切斷用工作臺9從S1位置到S2位置沿Y方向往復移動規定的距離D,從而利用乾燥機構29對切斷後基板13的整個面進行乾燥。As shown in FIGS. 4 (a) and 4 (b), in order to dry the cleaned and cut substrate 13, a moving mechanism (not shown) is used to make the cutting table 9 below the drying chamber 28 along the Y Move back and forth in the direction. When the post-cut substrate 13 placed on the cutting table 9 passes under the drying chamber 28, a gas 31 such as compressed air or nitrogen is blown from the drying mechanism 29 to the post-cut substrate 13 to remove the surface of the post-cut substrate 13 Blow off cleaning solution 27. For example, by cutting the cutting table 9 back and forth in a Y direction from the S1 position to the S2 position by a predetermined distance D, the entire surface of the cut substrate 13 is dried by the drying mechanism 29.

為了清洗切斷後基板13的整個面,通過使切斷用工作臺9從S1位置到S2位置沿Y方向往復移動規定的距離D而清洗切斷後基板13。同樣,為了對切斷後基板13的整個面進行乾燥,通過使切斷用工作臺9從S3位置到S4位置沿Y方向往復移動規定的距離D而對切斷後基板13進行乾燥。在清洗切斷後基板13的情況以及對切斷後基板13進行乾燥的情況中的任一情況下,均可以通過使切斷用工作臺沿Y方向移動規定的距離D而對切斷後基板13的整個面進行清洗及乾燥。In order to clean the entire surface of the cut-off substrate 13, the cut-off substrate 13 is cleaned by reciprocating a predetermined distance D in the Y direction from the S1 position to the S2 position. Similarly, in order to dry the entire surface of the substrate 13 after cutting, the substrate 13 for cutting is dried by reciprocating the cutting table 9 from the S3 position to the S4 position by a predetermined distance D in the Y direction. In both the case where the cut substrate 13 is cleaned and the case where the cut substrate 13 is dried, the entire cutting substrate 13 can be moved by moving the cutting table by a predetermined distance D in the Y direction. Noodles are washed and dried.

對於清洗乾燥機構14而言,在清洗部15與乾燥部16之間設置有中間室17。如圖4的(a)所示,中間室17在Y方向上具有長度d1。由此,能夠將清洗乾燥機構14設為在切斷後基板13的乾燥過程中切斷後基板13不會通過清洗室24的下方的結構。因此,在切斷後基板13的乾燥過程中或乾燥之後,能夠抑制附著在清洗室24的內壁或頂棚及清洗機構25上的水滴下落到切斷後基板13上。In the washing and drying mechanism 14, an intermediate chamber 17 is provided between the washing section 15 and the drying section 16. As shown in FIG. 4A, the intermediate chamber 17 has a length d1 in the Y direction. Accordingly, the cleaning and drying mechanism 14 can be configured to prevent the substrate 13 from passing under the cleaning chamber 24 after the cutting is performed while the substrate 13 is being dried. Therefore, it is possible to prevent water droplets adhering to the inner wall of the cleaning chamber 24 or the ceiling and the cleaning mechanism 25 from falling on the cut substrate 13 during or after the cutting of the cut substrate 13.

(作用效果)(Effect)

在本實施例中,切斷裝置1為具備如下構件的結構:作為切斷機構的心軸11a、11b,用於切斷作為切斷對象的封裝後基板2;作為工作臺的切斷用工作臺9,用於載置切斷後基板13,該切斷後基板13為由心軸11a、11b切斷封裝後基板2後的切斷物;清洗部15,用於清洗切斷用工作臺9上的切斷後基板13;乾燥部16,用於對從清洗部15移動來的切斷用工作臺9上的切斷後基板13進行乾燥;和中間室17,被設置在清洗部15與乾燥部16之間。In this embodiment, the cutting device 1 has a structure including mandrels 11a and 11b as cutting mechanisms for cutting the packaged substrate 2 as a cutting target, and cutting work as a table. The stage 9 is used for mounting the post-cut substrate 13, and the post-cut substrate 13 is a cut after the packaged substrate 2 is cut by the mandrels 11 a and 11 b; the cleaning unit 15 is used for cleaning the cutting table 9 After cutting substrate 13; drying section 16 for drying the cutting substrate 13 on the cutting table 9 moved from the cleaning section 15; and an intermediate chamber 17 provided between the cleaning section 15 and the drying section 16 between.

根據該結構,切斷裝置1具備:清洗部15,用於清洗切斷後基板13;乾燥部16,用於對切斷後基板13進行乾燥;和中間室17,被設置在清洗部15與乾燥部16之間。通過設置中間室17,切斷裝置1被設置成在切斷後基板13的乾燥過程中切斷用工作臺9不會通過清洗室24的下方的結構。因此,能夠抑制附著在清洗室24的內壁或頂棚及清洗機構25上的水滴下落到切斷後基板13上。According to this configuration, the cutting device 1 includes a cleaning section 15 for cleaning the cut substrate 13, a drying section 16 for drying the cut substrate 13, and an intermediate chamber 17 provided in the cleaning section 15 and the drying section. Between 16. By providing the intermediate chamber 17, the cutting device 1 is configured so that the cutting table 9 does not pass under the cleaning chamber 24 during the drying process of the substrate 13 after cutting. Therefore, it is possible to prevent water droplets adhering to the inner wall or ceiling of the cleaning chamber 24 and the cleaning mechanism 25 from falling on the cut substrate 13.

根據本實施,切斷裝置1具備:心軸11a、11b,用於切斷封裝後基板2;用於載置切斷後基板13的切斷用工作臺9,該切斷後基板13為對封裝後基板2進行切斷而成的切斷物;和清洗乾燥機構14,通過使切斷用工作臺9移動而對切斷後基板13進行清洗及乾燥。清洗乾燥機構14具備:清洗部15,用於清洗切斷後基板13;乾燥部16,用於對切斷後基板13進行乾燥;和中間室17,被設置在清洗部15與乾燥部16之間。通過在清洗部15與乾燥部16之間設置中間室17,清洗乾燥機構14被設置成在利用乾燥機構29對切斷後基板13進行乾燥時切斷後基板不會通過清洗室24下方的結構。由此,能夠抑制附著在清洗室24的內壁或頂棚及清洗機構25上的水滴下落到切斷後基板13上。因此,能夠抑制因水滴的下落導致的污跡產生及乾燥不良。According to this embodiment, the cutting device 1 includes spindles 11a and 11b for cutting the substrate 2 after the package, and a cutting table 9 for placing the substrate 13 after the cutting. A cut object obtained by cutting the substrate 2; and a cleaning and drying mechanism 14 that moves the cutting table 9 to clean and dry the cut substrate 13. The cleaning and drying mechanism 14 includes a cleaning section 15 for cleaning the cut substrate 13, a drying section 16 for drying the cut substrate 13, and an intermediate chamber 17 provided between the cleaning section 15 and the drying section 16. By providing an intermediate chamber 17 between the cleaning unit 15 and the drying unit 16, the cleaning and drying mechanism 14 is configured so that the substrate does not pass under the cleaning chamber 24 after cutting when the cutting substrate 13 is dried by the drying mechanism 29. As a result, it is possible to prevent water droplets adhering to the inner wall or ceiling of the cleaning chamber 24 and the cleaning mechanism 25 from falling onto the cut substrate 13. Therefore, it is possible to suppress the generation of stains and poor drying due to the drop of water droplets.

根據本實施,由於在清洗部15與乾燥部16之間設置有中間室17,因此與未設置中間室的結構相比較,能夠抑制從清洗機構25噴射出的清洗液27、附著在清洗室24的內壁上的水滴以及在清洗室24內產生的霧沫進入乾燥部16,並能抑制水滴向切斷物下落。According to this embodiment, since the intermediate chamber 17 is provided between the cleaning unit 15 and the drying unit 16, compared with a structure without an intermediate chamber, it is possible to suppress the cleaning liquid 27 ejected from the cleaning mechanism 25 and the adhesion to the cleaning chamber 24 The water droplets on the inner wall and the mist generated in the cleaning chamber 24 enter the drying section 16 and can prevent the water droplets from falling on the cut object.

[實施例2][Example 2]

(清洗乾燥機構的結構)(Structure of washing and drying mechanism)

參照圖5對切斷裝置1中使用的實施例2的清洗乾燥機構的結構進行說明。實施例2與實施例1的不同點在於改變了清洗部及中間室的結構。除此之外的結構由於與實施例1相同,因此省略說明。The structure of the washing and drying mechanism according to the second embodiment used in the cutting device 1 will be described with reference to FIG. 5. The difference between the second embodiment and the first embodiment is that the structures of the cleaning section and the intermediate chamber are changed. The other configurations are the same as those of the first embodiment, and therefore descriptions thereof are omitted.

如圖5的(a)所示,清洗乾燥機構32具備:清洗部33,用於清洗經切斷的切斷後基板13;乾燥部16,用於對已清洗的切斷後基板13進行乾燥;和中間室34,被設置在清洗部33與乾燥部16之間。乾燥部16與實施例1所示的乾燥部相同。俯視時,清洗乾燥機構32具有長度L2及寬度W的大小。清洗乾燥機構32的寬度W與實施例1所示的清洗乾燥機構14的寬度相同。清洗乾燥機構32的長度L2小於實施例1所示的清洗乾燥機構14的長度L1(參照圖2的(a))。切斷用工作臺9在清洗乾燥機構32的下方沿Y方向往復移動。As shown in FIG. 5 (a), the cleaning and drying mechanism 32 includes a cleaning section 33 for cleaning the cut and cut substrate 13, and a drying section 16 for drying the cleaned and cut substrate 13; and The intermediate chamber 34 is provided between the washing section 33 and the drying section 16. The drying section 16 is the same as the drying section shown in Example 1. In plan view, the washing and drying mechanism 32 has a length L2 and a width W. The width W of the washing and drying mechanism 32 is the same as the width of the washing and drying mechanism 14 shown in the first embodiment. The length L2 of the washing and drying mechanism 32 is smaller than the length L1 of the washing and drying mechanism 14 shown in Example 1 (see (a) of FIG. 2). The cutting table 9 moves back and forth in the Y direction below the washing and drying mechanism 32.

如圖5的(b)所示,清洗部33具備:中間室側分隔壁35,被設置在清洗部33的中間室34側;和分隔板36,從中間室側分隔壁35向清洗部33側傾斜。分隔板36例如從中間室側分隔壁35上的與中間室34的頂板頂部對應的位置(以清洗乾燥機構32的下端為基準面時高度h2的位置)朝向清洗部33側的下方(以清洗乾燥機構32的下端為基準面時高度h1的位置)而設置。在清洗部33的中間室側分隔壁35中,可以任意設定分隔板36的安裝位置、傾斜角度及長度。清洗室24和中間室34通過構造清洗部33的中間室側分隔壁35和分隔板36來分隔。通過設置分隔板36,能夠抑制從清洗機構25噴射出的清洗液27、附著在清洗室24的內壁上的水滴以及在清洗室24內產生的霧沫進入中間室34。As shown in FIG. 5 (b), the cleaning section 33 includes an intermediate chamber-side partition wall 35 provided on the intermediate chamber 34 side of the cleaning section 33, and a partition plate 36 extending from the intermediate chamber-side partition wall 35 toward the cleaning section. 33 sides tilt. The partition plate 36 is, for example, from the position on the intermediate-chamber-side partition wall 35 corresponding to the top of the top plate of the intermediate chamber 34 (the position of the height h2 when the lower end of the cleaning and drying mechanism 32 is used as a reference plane) toward the lower side of the cleaning unit 33 (the The lower end of the washing and drying mechanism 32 is a position at a height h1 when the reference surface is provided). In the intermediate-chamber-side partition wall 35 of the cleaning unit 33, the installation position, inclination angle, and length of the partition plate 36 can be arbitrarily set. The cleaning chamber 24 and the intermediate chamber 34 are separated by an intermediate chamber-side partition wall 35 and a partition plate 36 constituting the cleaning unit 33. By providing the partition plate 36, it is possible to prevent the cleaning liquid 27 ejected from the cleaning mechanism 25, water droplets adhering to the inner wall of the cleaning chamber 24, and mist generated in the cleaning chamber 24 from entering the intermediate chamber 34.

如圖5的(c)所示,構造中間室34的頂板37具有從中央部向兩側傾斜的人字形屋頂形狀。換言之,作為中間室34的頂板37的下表面的頂板內表面具有從中央部向兩側朝下傾斜的形狀。中間室34的中央部以清洗乾燥機構32的下端為基準面具有h2的高度,中間室34的側壁板以清洗乾燥機構32的下端為基準面具有h1的高度。因此,中間室34由具有人字形屋頂形狀的頂板37、設置於清洗部33的分隔板36和分別構造中間室34及清洗部33的側壁板包圍的空間來構造。As shown in FIG. 5 (c), the ceiling plate 37 constituting the intermediate chamber 34 has a herringbone roof shape inclined from the center to both sides. In other words, the inner surface of the top plate, which is the lower surface of the top plate 37 of the intermediate chamber 34, has a shape inclined downward from both sides of the central portion. The central portion of the intermediate chamber 34 has a height of h2 with the lower end of the washing and drying mechanism 32 as a reference plane, and the side wall plate of the intermediate chamber 34 has a height of h1 with the lower end of the washing and drying mechanism 32 as a reference plane. Therefore, the intermediate chamber 34 is configured by a space surrounded by a ceiling plate 37 having a herringbone roof shape, a partition plate 36 provided in the cleaning section 33, and a side wall plate that configures the intermediate chamber 34 and the cleaning section 33, respectively.

如圖5的(b)、圖7的(a)所示,由中間室34的頂板37下方的空間和設置於清洗部33的分隔板36下方的空間來構造中間室34。不僅中間室34的頂板37下方的空間為構造中間室34的空間,而且設置於清洗部33的分隔板36下方的空間也為構造中間室34的空間。因此,在清洗乾燥機構32的Y方向上,將頂板37下方的空間的長度d2(參照圖7的(a))和分隔板36下方的空間的長度d3(參照圖7的(a))相加後的長度(d2+d3)為有效的中間室34的長度。由此,在對切斷後基板13進行乾燥時,能夠使切斷用工作臺9往復移動至形成於分隔板36下方的空間。能夠與形成於分隔板36下方的空間在Y方向上的長度d3(參照圖7的(a))相應地加長切斷用工作臺9沿+Y方向移動的距離。因此,即使將清洗乾燥機構32的長度L2(參照圖5的(a))設為小於清洗乾燥機構14的長度L1(參照圖2的(a)),也能在中間室34的下方確保切斷用工作臺9往復移動的距離D(參照圖7的(a)),以對切斷後基板13的整個面進行乾燥。As shown in FIGS. 5 (b) and 7 (a), the intermediate chamber 34 is configured by a space below the top plate 37 of the intermediate chamber 34 and a space below the partition plate 36 provided in the cleaning unit 33. Not only the space below the top plate 37 of the intermediate chamber 34 is a space where the intermediate chamber 34 is structured, but also the space provided below the partition plate 36 of the cleaning unit 33 is a space where the intermediate chamber 34 is structured. Therefore, in the Y direction of the washing and drying mechanism 32, the length d2 of the space below the top plate 37 (see FIG. 7 (a)) and the length d3 of the space below the partition plate 36 (see FIG. 7 (a)). The added length (d2 + d3) is the effective length of the intermediate chamber 34. Accordingly, when the cut substrate 13 is dried, the cutting table 9 can be reciprocated to a space formed below the partition plate 36. The distance that the cutting table 9 moves in the + Y direction can be increased in accordance with the length d3 (see FIG. 7 (a)) of the space formed below the partition plate 36 in the Y direction. Therefore, even if the length L2 (see FIG. 5 (a)) of the washing and drying mechanism 32 is set to be shorter than the length L1 (see FIG. 2 (a)) of the washing and drying mechanism 14, the cutting can be ensured below the intermediate chamber 34. The distance D (refer to FIG. 7 (a)) in which the cutting table 9 is reciprocated to dry the entire surface of the substrate 13 after cutting.

清洗乾燥機構32為如下結構:通過在清洗部33設置分隔板36,從而抑制從清洗機構25噴射出的清洗液27進入中間室34、附著在清洗室24的內壁上的水滴進入中間室34以及在清洗室24內產生的霧沫進入中間室34。但是,即使在清洗部33設置有分隔板36的情況下,仍然具有在清洗室24內產生的霧沫進入中間室34的可能性。The washing and drying mechanism 32 has a structure in which a partition plate 36 is provided in the washing unit 33 to prevent the washing liquid 27 ejected from the washing mechanism 25 from entering the intermediate chamber 34 and water droplets attached to the inner wall of the washing chamber 24 from entering the intermediate chamber 34 and the mist generated in the cleaning chamber 24 enter the intermediate chamber 34. However, even when the partition plate 36 is provided in the cleaning unit 33, there is still a possibility that mist generated in the cleaning chamber 24 may enter the intermediate chamber 34.

因此,為了抑制進入中間室34的霧沫附著並凝聚在中間室34的內壁上而成為水滴,也可以將中間室34的內壁設為親水性內壁。對於構造中間室34的頂板37的下表面38即頂棚內表面及設置於清洗部33的分隔板36的下表面39而言,例如可通過進行噴砂處理而在其表面上形成細小的凹凸。可通過噴砂處理來將頂板37的下表面38和分隔板36的下表面39粗糙化而賦予親水性。由此,即使附著在頂板37的下表面38及分隔板36的下表面39上的霧沫凝聚,也能抑制該霧沫成為向下方下落的程度的大水滴。此外,由於與分隔板36的下表面39相比,頂板37的下表面38上的水滴更有可能落到切斷物,因此也可以只對頂板37的下表面38實施粗糙化加工。Therefore, in order to prevent the mist entering the intermediate chamber 34 from adhering and condensing on the inner wall of the intermediate chamber 34 to become water droplets, the inner wall of the intermediate chamber 34 may be made a hydrophilic inner wall. The lower surface 38 of the top plate 37 constituting the intermediate chamber 34, that is, the inner surface of the ceiling, and the lower surface 39 of the partition plate 36 provided in the cleaning unit 33 can be formed with fine irregularities on the surface by, for example, sandblasting. The lower surface 38 of the top plate 37 and the lower surface 39 of the partition plate 36 may be roughened by sandblasting to impart hydrophilicity. Accordingly, even if the mist adhered to the lower surface 38 of the top plate 37 and the lower surface 39 of the partition plate 36 is condensed, it is possible to suppress the mist from falling into a large water droplet to the extent that it falls downward. In addition, since the water droplets on the lower surface 38 of the top plate 37 are more likely to fall on the cut object than the lower surface 39 of the partition plate 36, only the lower surface 38 of the top plate 37 may be roughened.

此外,構造中間室34的頂板37被設為從中央部向兩側傾斜的人字形屋頂形狀。設置於清洗部33的分隔板36也向下方傾斜。因此,即使附著在中間室34的內壁上的霧沫凝聚成水滴,也不會成為向下方下落程度的大水滴,而是水滴容易順著頂板37及分隔板36的傾斜流向下方。因此,能夠抑制水滴下落到切斷後基板13上。In addition, the ceiling plate 37 that configures the intermediate chamber 34 is shaped like a herringbone roof that slopes from the center to both sides. The partition plate 36 provided in the washing unit 33 is also inclined downward. Therefore, even if the mist adhering to the inner wall of the intermediate chamber 34 condenses into water droplets, the water droplets do not become large water droplets falling downward, but the water droplets easily flow downward along the slope of the top plate 37 and the partition plate 36. Therefore, it is possible to suppress water drops from falling on the substrate 13 after cutting.

此外,可以在設置於清洗部33的分隔板36的上表面上設置用於噴射空氣或氮的氣體噴射機構40。可以任意設定噴射氣體的方向和角度等。此外,也可以將氣體噴射機構40設為能夠沿左右或上下方向自動變更氣體噴射方向的結構。通過設置氣體噴射機構40,能夠進一步抑制從清洗機構25噴射出的清洗液27、附著在清洗室24的內壁上的水滴以及在清洗室24內產生的霧沫進入中間室34。因此,能夠進一步抑制水滴附著在中間室34的內壁上。In addition, a gas injection mechanism 40 for injecting air or nitrogen may be provided on the upper surface of the partition plate 36 provided in the cleaning section 33. The direction and angle of the ejected gas can be arbitrarily set. In addition, the gas injection mechanism 40 may have a structure capable of automatically changing the gas injection direction in the left-right or up-down direction. By providing the gas injection mechanism 40, it is possible to further suppress the cleaning liquid 27 ejected from the cleaning mechanism 25, water droplets adhering to the inner wall of the cleaning chamber 24, and mist generated in the cleaning chamber 24 from entering the intermediate chamber 34. Therefore, it is possible to further suppress the water droplets from adhering to the inner wall of the intermediate chamber 34.

在實施例2所示的清洗乾燥機構32中,採取以下四種措施。(1)在清洗部33設置傾斜的分隔板36;(2)將中間室34的頂板37設為人字形屋頂形狀;(3)對中間室34的頂板37的下表面38及設置於清洗部33的分隔板36的下表面39進行粗糙化;(4)在分隔板36的上表面上設置氣體噴射機構40。通過這些措施,能夠進一步抑制水滴下落到切斷後基板13上。In the washing and drying mechanism 32 shown in the second embodiment, the following four measures are taken. (1) An inclined partition plate 36 is provided in the cleaning section 33; (2) The ceiling plate 37 of the intermediate chamber 34 is shaped as a herringbone roof; (3) The lower surface 38 of the ceiling plate 37 of the intermediate chamber 34 and the cleaning plate 33 The lower surface 39 of the partition plate 36 of the portion 33 is roughened. (4) A gas injection mechanism 40 is provided on the upper surface of the partition plate 36. By these measures, it is possible to further suppress the drop of water droplets on the substrate 13 after cutting.

(清洗乾燥機構的操作)(Operation of cleaning and drying mechanism)

參照圖6~圖7,說明通過清洗乾燥機構32來清洗及乾燥切斷後基板13的操作。The operation of cleaning and drying the cut substrate 13 by the cleaning and drying mechanism 32 will be described with reference to FIGS. 6 to 7.

如圖6的(a)、(b)所示,為了清洗切斷後基板13,使用移動機構(未圖示)使切斷用工作臺9在清洗室24的下方沿Y方向往復移動。當切斷用工作臺9通過由設置於清洗部33的分隔板36分隔且在清洗室24的下方開口的開口部時,從多個清洗機構25向切斷後基板13噴射清洗液27而清洗切斷後基板13。與實施例1同樣,為了清洗切斷後基板13的整個面,使切斷用工作臺9從S1位置到S2位置沿Y方向往復移動規定的距離D。通過多個清洗機構25來清洗切斷後基板13的整個面。As shown in FIGS. 6A and 6B, in order to clean the cut substrate 13, a cutting mechanism 9 is used to move the cutting table 9 back and forth in the Y direction below the cleaning chamber 24 using a moving mechanism (not shown). When the cutting table 9 is partitioned by a partition plate 36 provided in the cleaning section 33 and is opened below the cleaning chamber 24, the cleaning liquid 27 is sprayed from the plurality of cleaning mechanisms 25 to the cut back substrate 13 to be cleaned. Cut the back substrate 13. As in Example 1, in order to clean the entire surface of the substrate 13 after cutting, the cutting table 9 is reciprocated in the Y direction from the S1 position to the S2 position by a predetermined distance D. The entire surface of the cut substrate 13 is cleaned by a plurality of cleaning mechanisms 25.

清洗室24和中間室34由構造清洗部33的中間室側分隔壁35及分隔板36來分隔。通過設置分隔板36,能夠抑制從清洗機構25噴射出的清洗液27進入中間室34、附著在清洗室24的內壁上的水滴進入中間室34、以及在清洗室24內產生的霧沫進入中間室34。The cleaning chamber 24 and the intermediate chamber 34 are partitioned by an intermediate chamber-side partition wall 35 and a partition plate 36 constituting the cleaning unit 33. By providing the partition plate 36, it is possible to prevent the cleaning liquid 27 ejected from the cleaning mechanism 25 from entering the intermediate chamber 34, water droplets adhering to the inner wall of the cleaning chamber 24, and the mist generated in the cleaning chamber 24 Enter the middle chamber 34.

如圖7的(a)、(b)所示,為了對切斷後基板13進行乾燥,使用移動機構(未圖示)使切斷用工作臺9在乾燥室28的下方沿Y方向往復移動。與實施例1同樣,為了對切斷後基板13的整個面進行乾燥,使切斷用工作臺9從S3位置到S4位置沿Y方向往復移動規定的距離D。As shown in (a) and (b) of FIG. 7, in order to dry the cut substrate 13, a cutting mechanism 9 is used to reciprocate the cutting table 9 in the Y direction below the drying chamber 28 using a moving mechanism (not shown). As in Example 1, in order to dry the entire surface of the substrate 13 after cutting, the cutting table 9 is reciprocated by a predetermined distance D in the Y direction from the S3 position to the S4 position.

中間室34由中間室34的頂板37下方的空間和設置於清洗部33的分隔板36下方的空間來構造。在對切斷後基板13進行乾燥時,能夠使切斷用工作臺9往復移動至分隔板36下方的空間。即,能夠使切斷用工作臺9在清洗乾燥機構32的Y方向上沿+Y方向往復移動長度d2+d3的範圍,其中,長度d2+d3為將頂板37下方的空間的長度d2和分隔板36下方的空間的長度d3相加後的長度。通過在清洗部33中設置分隔板36,能夠加長中間室34在Y方向上的有效長度。因此,能夠在中間室34的下方加長切斷用工作臺9往復移動的距離。由此,即使縮短清洗乾燥機構32的長度,也能確保切斷用工作臺9往復移動的距離D,以對切斷後基板13的整個面進行乾燥。因此,能夠抑制水滴下落到切斷後基板13上。The intermediate chamber 34 is configured by a space below the top plate 37 of the intermediate chamber 34 and a space below the partition plate 36 provided in the washing unit 33. When the cut substrate 13 is dried, the cutting table 9 can be reciprocated to a space below the partition plate 36. That is, the cutting table 9 can be moved back and forth in the + Y direction in the range of the length d2 + d3 in the Y direction of the washing and drying mechanism 32, where the length d2 + d3 is the length d2 of the space below the top plate 37 and The length d3 of the space below the partition plate 36 is added up. By providing the partition plate 36 in the cleaning unit 33, it is possible to lengthen the effective length of the intermediate chamber 34 in the Y direction. Therefore, the reciprocating distance of the cutting table 9 can be increased below the intermediate chamber 34. Accordingly, even if the length of the cleaning and drying mechanism 32 is shortened, the distance D for reciprocating movement of the cutting table 9 can be ensured to dry the entire surface of the substrate 13 after cutting. Therefore, it is possible to suppress water drops from falling on the substrate 13 after cutting.

(作用效果)(Effect)

根據本實施例,在清洗乾燥機構32中設置有從清洗部33的中間室側分隔壁35向清洗部33側傾斜的分隔板36。由構造清洗部33的中間室側分隔壁35和分隔板36來分隔清洗室24和中間室34。由此,能夠縮小清洗部24下方的開口部而加大構造中間室34的有效空間。因此,在對切斷後基板13進行乾燥時,能夠加長切斷用工作臺9在中間室34中往復移動的距離。因此,能夠抑制水滴下落到切斷後基板13上。並且,能夠縮短清洗乾燥機構32的長度。According to the present embodiment, the washing and drying mechanism 32 is provided with the partition plate 36 that is inclined from the intermediate-chamber-side partition wall 35 of the cleaning unit 33 to the cleaning unit 33 side. The cleaning chamber 24 and the intermediate chamber 34 are partitioned by the intermediate-chamber-side partition wall 35 and the partition plate 36 that structure the cleaning section 33. Thereby, the opening part below the washing | cleaning part 24 can be narrowed, and the effective space of the intermediate chamber 34 can be enlarged. Therefore, when the cut substrate 13 is dried, the reciprocating distance of the cutting table 9 in the intermediate chamber 34 can be increased. Therefore, it is possible to suppress water drops from falling on the substrate 13 after cutting. In addition, the length of the washing and drying mechanism 32 can be shortened.

根據本實施例,在清洗乾燥機構32中設置有從清洗部33的中間室側分隔壁35向清洗部33側傾斜的分隔板36。由此,能夠抑制從清洗機構25噴射出的清洗液27、附著在清洗室24的內壁上的水滴、以及在清洗室24內產生的霧沫進入中間室34。因此,能夠抑制水滴附著在中間室34的內壁上。因此,能夠在中間室34中抑制水滴下落到切斷後基板13上。According to the present embodiment, the washing and drying mechanism 32 is provided with the partition plate 36 that is inclined from the intermediate-chamber-side partition wall 35 of the cleaning unit 33 to the cleaning unit 33 side. This can prevent the cleaning liquid 27 ejected from the cleaning mechanism 25, the water droplets adhering to the inner wall of the cleaning chamber 24, and the mist generated in the cleaning chamber 24 from entering the intermediate chamber 34. Therefore, it is possible to suppress water droplets from adhering to the inner wall of the intermediate chamber 34. Therefore, it is possible to suppress water droplets from falling on the cut substrate 13 in the intermediate chamber 34.

根據本實施例,將構造中間室34的頂板37設為從中央部向兩側傾斜的人字形屋頂形狀。換言之,將中間室34的頂棚內表面設為從中央部向兩側朝下傾斜的形狀。即使進入中間室34的霧沫凝聚成水滴,也能容易使水滴順著頂棚內表面即頂板37的傾斜流向兩側。因此,能夠在中間室34中抑制水滴下落到切斷後基板13上。According to the present embodiment, the ceiling plate 37 constituting the intermediate chamber 34 is formed into a herringbone roof shape inclined from the center to both sides. In other words, the ceiling inner surface of the intermediate chamber 34 has a shape inclined downward from both sides of the central portion. Even if the mist entering the intermediate chamber 34 condenses into water droplets, the water droplets can easily flow to both sides along the inner surface of the ceiling, that is, the top plate 37. Therefore, it is possible to suppress water droplets from falling on the cut substrate 13 in the intermediate chamber 34.

根據本實施例,對於中間室34的內壁而言,至少對頂棚內表面進行粗糙化而賦予親水性。對於構造中間室34的頂板37的下表面38及設置於清洗部33的分隔板36的下表面39而言,通過實施噴砂處理而在其表面上形成細小的凹凸。由此,能夠抑制附著在中間室34的內壁上的霧沫成為大水滴。因此,能夠在中間室34中抑制水滴下落到切斷後基板13上。According to this embodiment, at least the inner surface of the ceiling is roughened to the inner wall of the intermediate chamber 34 to impart hydrophilicity. The lower surface 38 of the top plate 37 constituting the intermediate chamber 34 and the lower surface 39 of the partition plate 36 provided in the cleaning unit 33 are subjected to sandblasting to form fine irregularities on the surfaces. As a result, it is possible to suppress the mist adhered to the inner wall of the intermediate chamber 34 from becoming large water droplets. Therefore, it is possible to suppress water droplets from falling on the cut substrate 13 in the intermediate chamber 34.

根據本實施例,在設置於清洗部33的分隔板36的上表面上設置有氣體噴射機構40。由此,能夠抑制從清洗機構25噴射出的清洗液27、附著在清洗室24的內壁上的水滴、以及在清洗室24內產生的霧沫進入中間室34。因此,能夠進一步抑制水滴附著在中間室34的內壁上。因此,能夠進一步抑制水滴下落到切斷後基板13上。According to the present embodiment, the gas injection mechanism 40 is provided on the upper surface of the partition plate 36 provided in the cleaning section 33. This can prevent the cleaning liquid 27 ejected from the cleaning mechanism 25, the water droplets adhering to the inner wall of the cleaning chamber 24, and the mist generated in the cleaning chamber 24 from entering the intermediate chamber 34. Therefore, it is possible to further suppress the water droplets from adhering to the inner wall of the intermediate chamber 34. Therefore, it is possible to further suppress the water droplets from falling on the cut substrate 13.

在各實施例中,示出對作為切斷對象的具有矩形(正方形)形狀的切斷對象進行切斷的情況。不限於此,在對半導體晶圓那樣實質上具有圓形形狀的切斷對象進行切斷的情況下,也能應用目前為止說明的內容。In each embodiment, a case where a cutting object having a rectangular (square) shape as a cutting object is cut is shown. It is not limited to this, and when cutting a cutting object having a substantially circular shape like a semiconductor wafer, the contents described so far can be applied.

在各實施例中,示出對作為切斷對象的安裝有晶片的封裝後基板進行切斷的情況。不限於此,在對作為封裝後基板以外的切斷對象的以下切斷對象進行切斷而單片化的情況下,可應用本發明。第一種為對內置有由矽或化合物半導體構成的電路元件或MEMS(Micro Electro Mechanical Systems,微機電系統)等功能元件的半導體晶圓(semiconductor wafer)進行單片化的情況。第二種為對內置有電阻器、電容器、感測器、表面彈性波器件等功能元件的陶瓷基板或玻璃基板等進行單片化而製造晶片電阻器、晶片電容器、晶片型感測器、表面彈性波器件等產品的情況。在這兩種情況下,半導體晶圓、陶瓷基板或玻璃基板等相當於內置有與多個區域分別對應的功能元件的支撐部件。In each embodiment, a case where a packaged substrate on which a wafer is mounted as a cutting target is cut is shown. The present invention is not limited to this, and when the following cutting objects, which are cutting objects other than the packaged substrate, are cut and singulated, the present invention can be applied. The first is a case of singulating a semiconductor wafer having a circuit element made of silicon or a compound semiconductor or a functional element such as MEMS (Micro Electro Mechanical Systems). The second method is to manufacture a chip resistor, a chip capacitor, a chip-type sensor, and a surface by singulating a ceramic substrate or a glass substrate with functional elements such as resistors, capacitors, sensors, and surface acoustic wave devices. The situation of products such as elastic wave devices. In both cases, a semiconductor wafer, a ceramic substrate, a glass substrate, or the like corresponds to a support member having built-in functional elements corresponding to a plurality of regions, respectively.

如上述,上述實施例的切斷裝置為具備如下構件的結構:切斷機構,用於對切斷對象進行切斷;工作臺,用於載置切斷物,該切斷物由切斷機構對切斷對象進行切斷而成;清洗部,用於清洗工作臺上的切斷物;乾燥部,用於對從清洗部移動來的工作臺上的切斷物進行乾燥;和中間室,被設置在清洗部與乾燥部之間。As described above, the cutting device of the above embodiment has a structure including a cutting mechanism for cutting a cutting object, and a table for placing a cutting object. The cutting object is provided by the cutting mechanism. The cutting object is cut; a cleaning section is used to clean the cuts on the worktable; a drying section is used to dry the cuts on the worktable moved from the cleaning section; and the intermediate chamber, It is provided between a washing part and a drying part.

根據該結構,在清洗部與乾燥部之間設置有中間室。由此,在對切斷物進行乾燥時,能夠不讓切斷物通過清洗部的下方。因此,能夠抑制水滴從清洗部下落到切斷物上。According to this configuration, an intermediate chamber is provided between the washing section and the drying section. Accordingly, when the cut object is dried, the cut object can be prevented from passing under the washing section. Therefore, it is possible to suppress the water droplets from falling from the washing section onto the cut object.

此外,上述實施例的切斷裝置為在清洗部的中間室側分隔壁的下方具有向清洗部側傾斜的分隔板的結構。Moreover, the cutting device of the said Example has the structure which has the partition plate inclined to the washing part side below the intermediate-chamber-side partition wall of a washing part.

根據該結構,通過在清洗部設置分隔板,從而加大中間室的有效空間。由此,在對切斷物進行乾燥時,能夠加長工作臺移動的距離。因此,能夠抑制水滴下落到切斷物上。According to this structure, by providing a partition plate in a washing | cleaning part, the effective space of an intermediate room is enlarged. This makes it possible to lengthen the moving distance of the table when the cut object is dried. Therefore, it is possible to suppress water drops from falling on the cut object.

此外,上述實施例的切斷裝置為在分隔板的上表面上具有用於噴射氣體的氣體噴射機構的結構。In addition, the cutting device of the above embodiment has a structure in which a gas ejection mechanism for ejecting gas is provided on the upper surface of the partition plate.

根據該結構,通過氣體噴射機構來抑制清洗液、水滴和霧沫進入中間室。因此,能夠抑制水滴從中間室的頂板下落到切斷物上。According to this structure, the gas injection mechanism suppresses the cleaning liquid, water droplets, and mist from entering the intermediate chamber. Therefore, it is possible to suppress the drop of water droplets from the top plate of the intermediate chamber onto the cut object.

此外,上述實施例的切斷裝置為具有中間室的頂棚內表面從中央部向兩側朝下傾斜的形狀的結構。In addition, the cutting device of the above-mentioned embodiment has a structure in which the ceiling inner surface of the intermediate chamber is inclined downward from the center to both sides.

根據該結構,中間室的頂棚內表面從中央部向兩側朝下具有傾斜。即使水滴附著在頂棚內表面上,也容易使水滴順著頂棚內表面的傾斜流向兩側。因此,能夠抑制水滴從中間室的頂棚內表面下落到切斷物上。According to this structure, the inner surface of the ceiling of the intermediate chamber is inclined downward from the center to both sides. Even if the water droplets adhere to the inner surface of the ceiling, it is easy for the water droplets to flow to both sides along the inclination of the inner surface of the ceiling. Therefore, it is possible to suppress water drops from falling from the ceiling inner surface of the intermediate chamber onto the cut object.

此外,上述實施例的切斷裝置為至少中間室的頂棚內表面被施以粗糙化的結構。In addition, the cutting device of the above embodiment has a structure in which at least the inner surface of the ceiling of the intermediate chamber is roughened.

根據該結構,在中間室的頂棚內表面上形成細小的凹凸。由此,抑制附著在中間室的頂棚內表面上的霧沫成為大水滴。因此,能夠抑制水滴從中間室的頂棚內表面下落到切斷物上。According to this structure, fine unevenness is formed on the inner surface of the ceiling of the intermediate chamber. Thereby, the mist adhered to the ceiling inner surface of the intermediate chamber is prevented from becoming large water droplets. Therefore, it is possible to suppress water drops from falling from the ceiling inner surface of the intermediate chamber onto the cut object.

此外,上述實施例的切斷裝置為如下結構:清洗部具有用於清洗切斷物的清洗機構,乾燥部具有用於對切斷物進行乾燥的乾燥機構。In addition, the cutting device of the above-mentioned embodiment has a structure in which the cleaning section includes a cleaning mechanism for cleaning the cut object, and the drying section includes a drying mechanism for drying the cut object.

根據該結構,能夠利用清洗機構來清洗切斷物,並且利用乾燥機構對切斷物進行乾燥。According to this configuration, the cut object can be cleaned by the cleaning mechanism, and the cut object can be dried by the drying mechanism.

此外,在上述實施例的切斷裝置中,切斷對象為具有樹脂部的支撐部件。Further, in the cutting device of the above embodiment, the cutting target is a support member having a resin portion.

根據該結構,能夠使用上述切斷機構來對切斷對象進行切斷,該切斷對象對支撐部件進行樹脂成型而成。According to this configuration, the cutting target can be cut using the cutting mechanism, and the cutting target is formed by resin-molding the support member.

此外,在上述實施例的切斷裝置中,乾燥機構為當工作臺至少在乾燥部及中間室的下方移動時對切斷物進行乾燥的結構。 【00100】 根據該結構,當工作臺在乾燥部及中間室的下方移動時,利用乾燥機構對切斷物進行乾燥。因此,能夠抑制水滴從清洗部下落到切斷物上。 【00101】 本發明並不限於上述的各實施例,在不脫離本發明精神的範圍內,能夠根據需要任意且適當組合而進行變更,或選擇性地採用。Further, in the cutting device of the above embodiment, the drying mechanism is configured to dry the cut object when the table moves at least below the drying section and the intermediate chamber. [00100] According to this configuration, when the table moves below the drying section and the intermediate chamber, the cut object is dried by the drying mechanism. Therefore, it is possible to suppress the water droplets from falling from the washing section onto the cut object. [00101] The present invention is not limited to the above-mentioned embodiments, and can be arbitrarily and appropriately combined to be changed or selectively adopted as needed without departing from the spirit of the present invention.

1‧‧‧切斷裝置1‧‧‧ cutting device

2‧‧‧封裝後基板(切斷對象)2‧‧‧ Post-package substrate (cutting target)

3‧‧‧切斷對象供給機構3‧‧‧ Cut off supply mechanism

4‧‧‧切斷對象載置部4‧‧‧ Cutting target placement section

5‧‧‧運送機構5‧‧‧ delivery agency

6‧‧‧對準區域6‧‧‧ alignment area

7‧‧‧切斷區域7‧‧‧ cut-off area

8‧‧‧清洗乾燥區域8‧‧‧ Clean and dry area

9‧‧‧切斷用工作臺(工作臺)9‧‧‧ Cutting workbench (workbench)

10‧‧‧對準用照相機10‧‧‧ Alignment Camera

11a、11b‧‧‧心軸(切斷機構)11a, 11b‧‧‧ mandrel (cutting mechanism)

12a、12b‧‧‧旋轉刃12a, 12b‧‧‧rotating blade

13‧‧‧切斷後基板(切斷物)13‧‧‧ After cutting the substrate (cut object)

14、32‧‧‧清洗乾燥機構14, 32‧‧‧Cleaning and drying mechanism

15、33‧‧‧清洗部15, 33‧‧‧ Cleaning Department

16‧‧‧乾燥部16‧‧‧ Drying section

17、34‧‧‧中間室17, 34‧‧‧ Intermediate Room

18‧‧‧檢查用工作臺18‧‧‧ Inspection Workbench

19‧‧‧運送機構19‧‧‧ delivery agency

20‧‧‧檢查用照相機20‧‧‧ Inspection Camera

21‧‧‧合格品托盤21‧‧‧Qualified product tray

22‧‧‧次品托盤22‧‧‧Defective tray

23‧‧‧移動空間23‧‧‧ Mobile Space

24‧‧‧清洗室24‧‧‧Cleaning room

25‧‧‧清洗機構25‧‧‧cleaning agency

26‧‧‧中間室側分隔壁26‧‧‧ side partition wall

27‧‧‧清洗液27‧‧‧Cleaning liquid

28‧‧‧乾燥室28‧‧‧ drying room

29‧‧‧乾燥機構29‧‧‧ drying mechanism

30‧‧‧中間室側分隔壁30‧‧‧ side partition wall

31‧‧‧氣體31‧‧‧gas

35‧‧‧中間室側分隔壁35‧‧‧ side wall of middle chamber

36‧‧‧分隔板36‧‧‧ divider

37‧‧‧頂板37‧‧‧Top plate

38‧‧‧頂板的下表面(頂棚內表面)38‧‧‧ the lower surface of the roof (the inner surface of the ceiling)

39‧‧‧分隔板的下表面39‧‧‧ lower surface of divider

40‧‧‧氣體噴射機構40‧‧‧gas injection mechanism

A‧‧‧供給模組A‧‧‧Supply Module

B‧‧‧切斷模組B‧‧‧ Cut-off module

C‧‧‧檢查模組C‧‧‧Check Module

P‧‧‧產品P‧‧‧ Products

CTL‧‧‧控制部CTL‧‧‧Control Department

L1、L2‧‧‧長度L1, L2‧‧‧ length

W‧‧‧寬度W‧‧‧Width

h1、h2、h3、h4‧‧‧高度h1, h2, h3, h4‧‧‧ height

S1、S2、S3、S4‧‧‧位置S1, S2, S3, S4‧‧‧ position

D‧‧‧距離D‧‧‧distance

d1、d2、d3‧‧‧長度d1, d2, d3‧‧‧ length

圖1是表示在本發明所涉及的切斷裝置中的裝置的大致結構的俯視圖。FIG. 1 is a plan view showing a schematic configuration of a device in a cutting device according to the present invention.

圖2是表示實施例1中使用的清洗乾燥機構的示意圖,(a)是俯視圖,(b)是A-A線剖視圖,(c)是B-B線剖視圖。Fig. 2 is a schematic view showing a washing and drying mechanism used in Example 1, (a) is a plan view, (b) is a cross-sectional view taken along the line A-A, and (c) is a cross-sectional view taken along the line B-B.

圖3的(a)~(b)是表示使用實施例1的清洗乾燥機構來清洗切斷物的操作的示意性剖視圖。FIGS. 3 (a) to 3 (b) are schematic cross-sectional views illustrating an operation of cleaning a cut object using the washing and drying mechanism of the first embodiment.

圖4的(a)~(b)是表示使用實施例1的清洗乾燥機構來對切斷物進行乾燥的操作的示意性剖視圖。FIGS. 4 (a) to 4 (b) are schematic cross-sectional views illustrating an operation of drying a cut object using the washing and drying mechanism of Example 1. FIG.

圖5是表示實施例2中使用的清洗乾燥機構的示意圖,(a)是俯視圖,(b)是C-C線剖視圖,(c)是D-D線剖視圖。Fig. 5 is a schematic view showing a washing and drying mechanism used in Example 2, (a) is a plan view, (b) is a cross-sectional view taken along the line C-C, and (c) is a cross-sectional view taken along the line D-D.

圖6的(a)~(b)是表示使用實施例2的清洗乾燥機構來清洗切斷物的操作的示意性剖視圖。FIGS. 6 (a) to 6 (b) are schematic cross-sectional views illustrating an operation of cleaning a cut object using the washing and drying mechanism of the second embodiment.

圖7的(a)~(b)是表示使用實施例2的清洗乾燥機構來對切斷物進行乾燥的操作的示意性剖視圖。FIGS. 7 (a) to 7 (b) are schematic cross-sectional views showing an operation of drying the cut object using the washing and drying mechanism of Example 2. FIG.

Claims (8)

一種切斷裝置,包括: 一切斷機構,配置以對切斷對象進行切斷; 一工作臺,配置以載置切斷物,該切斷物由所述切斷機構對該切斷對象進行切斷而成; 一清洗部,配置以清洗該工作臺上的該切斷物; 一乾燥部,配置以對從該清洗部移動來的該工作臺上的該切斷物進行乾燥;以及 一中間室,係設置在該清洗部與該乾燥部之間。A cutting device includes: a cutting mechanism configured to cut a cutting object; a table configured to place a cutting object, the cutting object cutting the cutting object by the cutting mechanism; A cutting part configured to clean the cut object on the table; a drying part configured to dry the cut object on the table moved from the cleaning part; and an intermediate part The chamber is provided between the washing section and the drying section. 根據申請專利範圍第1項所述的切斷裝置,其中, 在該清洗部的中間室側分隔壁的下方具有向該清洗部側傾斜的一分隔板。The cutting device according to item 1 of the scope of patent application, wherein a partition plate inclined to the cleaning section side is provided below the partition wall on the intermediate chamber side of the cleaning section. 根據申請專利範圍第2項所述的切斷裝置,其中, 在該分隔板的上表面上具有用於噴射氣體的一氣體噴射機構。The cutting device according to item 2 of the scope of patent application, wherein a gas injection mechanism for injecting gas is provided on the upper surface of the partition plate. 根據申請專利範圍第1至3項中的任一項所述的切斷裝置,其中, 該中間室的頂棚內表面具有從中央部向兩側朝下傾斜的形狀。The cutting device according to any one of claims 1 to 3, wherein a ceiling inner surface of the intermediate chamber has a shape inclined downward from both sides of the central portion. 根據申請專利範圍第1至3項中的任一項所述的切斷裝置,其中, 至少該中間室的頂棚內表面被施以粗糙化。The cutting device according to any one of claims 1 to 3, wherein at least an inner surface of a ceiling of the intermediate chamber is roughened. 根據申請專利範圍第1至3項中的任一項所述的切斷裝置,其中, 該清洗部具有配置以清洗該切斷物的一清洗機構, 該乾燥部具有配置以對該切斷物進行乾燥的一乾燥機構。The cutting device according to any one of claims 1 to 3, wherein the cleaning section has a cleaning mechanism configured to clean the cut object, and the drying section is configured to clean the cut object. A drying mechanism that performs drying. 根據申請專利範圍第1至3項中的任一項所述的切斷裝置,其中, 該切斷對象為具有樹脂部的支撐部件。The cutting device according to any one of claims 1 to 3, wherein the cutting target is a support member having a resin portion. 根據申請專利範圍第6項所述的切斷裝置,其中, 當該工作臺至少在該乾燥部及該中間室的下方移動時,該乾燥機構對該切斷物進行乾燥。The cutting device according to item 6 of the patent application scope, wherein the drying mechanism dries the cut object when the table moves at least below the drying section and the intermediate chamber.
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