TW201822420A - 電池保護裝置 - Google Patents

電池保護裝置 Download PDF

Info

Publication number
TW201822420A
TW201822420A TW106126379A TW106126379A TW201822420A TW 201822420 A TW201822420 A TW 201822420A TW 106126379 A TW106126379 A TW 106126379A TW 106126379 A TW106126379 A TW 106126379A TW 201822420 A TW201822420 A TW 201822420A
Authority
TW
Taiwan
Prior art keywords
charge
discharge control
terminal
protection device
terminals
Prior art date
Application number
TW106126379A
Other languages
English (en)
Other versions
TWI770043B (zh
Inventor
田中伸史
佐竹義裕
川口徳仁
小清水浩士
碓井薫
大場雄介
Original Assignee
三美電機股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三美電機股份有限公司 filed Critical 三美電機股份有限公司
Publication of TW201822420A publication Critical patent/TW201822420A/zh
Application granted granted Critical
Publication of TWI770043B publication Critical patent/TWI770043B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00Secondary cells; Manufacture thereof
    • H01M10/42Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H01M10/425Structural combination with electronic components, e.g. electronic circuits integrated to the outside of the casing
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02JCIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/0029Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
    • H02J7/0031Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits using battery or load disconnect circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49503Lead-frames or other flat leads characterised by the die pad
    • H01L23/4951Chip-on-leads or leads-on-chip techniques, i.e. inner lead fingers being used as die pad
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/49Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49575Assemblies of semiconductor devices on lead frames
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00Secondary cells; Manufacture thereof
    • H01M10/05Accumulators with non-aqueous electrolyte
    • H01M10/052Li-accumulators
    • H01M10/0525Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00Secondary cells; Manufacture thereof
    • H01M10/42Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H01M10/44Methods for charging or discharging
    • H01M10/448End of discharge regulating measures
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/18Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for batteries; for accumulators
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02JCIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/0029Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
    • H02J7/00302Overcharge protection
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02JCIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/0029Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
    • H02J7/00304Overcurrent protection
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02JCIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/0029Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
    • H02J7/00306Overdischarge protection
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02JCIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/0042Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries characterised by the mechanical construction
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
    • H01L2224/05554Shape in top view being square
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13144Gold [Au] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H01L2224/1401Structure
    • H01L2224/1403Bump connectors having different sizes, e.g. different diameters, heights or widths
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16245Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/291Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/2919Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339Silver [Ag] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32135Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49171Fan-out arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119Arrangement of the bump connectors prior to mounting
    • H01L2224/81192Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319Arrangement of the layer connectors prior to mounting
    • H01L2224/83192Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/922Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222Sequential connecting processes
    • H01L2224/92222Sequential connecting processes the first connecting process involving a bump connector
    • H01L2224/92225Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/922Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222Sequential connecting processes
    • H01L2224/92242Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49503Lead-frames or other flat leads characterised by the die pad
    • H01L23/49513Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
    • H01L24/92Specific sequence of method steps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • H01L2924/141Analog devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00Secondary cells; Manufacture thereof
    • H01M10/42Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H01M10/425Structural combination with electronic components, e.g. electronic circuits integrated to the outside of the casing
    • H01M2010/4271Battery management systems including electronic circuits, e.g. control of current or voltage to keep battery in healthy state, cell balancing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10Energy storage using batteries

Abstract

本發明提供一種電池保護裝置,有助於小型化以及導通電阻的降低。前述池保護裝置具備:充放電控制晶片,包括連接到二次電池的充電控制FET與放電控制FET;保護晶片,根據二次電池的兩端電壓控制充電控制FET與放電控制FET來防止二次電池的過充電、過放電以及過電流;以及引線框架,具有複數個外部端子的連接面及與連接面導通的另一面;引線框架的另一面與形成於充放電控制晶片的表面的充電控制FFT以及放電控制FET的端子經由導電材料電性連接;保護晶片以該保護晶片的背面相向的方式經由絕緣構件被安裝在充放電控制晶片的背面;保護晶片的端子與引線框架的另一面藉由接合線電性連接;充放電控制晶片與前述保護晶片被樹脂覆蓋。

Description

電池保護裝置
本發明提供一種二次電池的電池保護裝置。
以往,已知在具有鋰離子電池等二次電池的電池組中設置有用於保護電池免於過充電、過放電以及過電流的半導體裝置。
在該半導體裝置中,已知在1個封裝中內置具有MOS(Metal-Oxide-Semiconductor;金屬氧化物半導體)開關的充放電控制用晶片與具有MOS開關的控制電路的監控用晶片來進行小型化的技術。另外,在該半導體裝置中,已知充放電控制用晶片藉由多條接合線(bonding wire)與電極連接(專利文獻1)。
[先前技術文獻]
[專利文獻]
專利文獻1:日本特開2010-127805號公報。
在上述先前技術中,接合線的相應分的電阻被加到充放電控制用晶片的電阻上,因此是不利於降低導通電阻的構造。在該構造中,為了降低導通電阻,需要以增加引線接合的條數,分散電阻的方式進行引線接合。
然而,為了增加引線接合的條數,還需要增大封裝側的端子尺寸,無法對小型化作出貢獻。另外,還考慮增大充放電控制用晶片的尺寸的方法,但是這種情況下封裝尺寸亦會變大。
本發明的目的在於提供一種可以有助於小型化以及導通電阻的降低的電池保護裝置。
本發明的技術是用於防止二次電池220中的過充電、過放電以及過電流且為已被形成為一個封裝的電池保護裝置100,前述電池保護裝置100具備:充放電控制晶片120,包括連接至前述二次電池220的充電控制FET(Field Effect Transistor;場效電晶體)124與放電控制FET123;保護晶片130,根據前述二次電池220的兩端電壓控制前述充電控制FET124與前述放電控制FET123來防止前述二次電池220的過充電、過放電以及過電流;以及引線框架110,具有複數個外部端子的連接面114及與前述連接面114導通 的另一面113;前述引線框架110的前述另一面113與形成於前述充放電控制晶片120的表面121的前述充電控制FET124以及前述放電控制FET123的端子經由導電材料111電性連接;前述保護晶片130以該保護晶片130的背面132相向的方式經由絕緣性構件被安裝在前述充放電控制晶片120的背面122;前述保護晶片130的端子T1至T6與前述引線框架110的前述另一面113過接合線140電性連接;前述充放電控制晶片120與前述保護晶片130被樹脂150覆蓋。
有助於小型化以及導通電阻的降低。
60‧‧‧電池保護裝置
61‧‧‧引線框架
62‧‧‧導電材料
63‧‧‧充放電控制用晶片
64‧‧‧絕緣性接著劑
65‧‧‧接著保護用晶片
66、67‧‧‧接合線
631‧‧‧未形成電極的背面
632‧‧‧形成了電極的表面
100‧‧‧電池保護裝置
101‧‧‧外部端子面
110‧‧‧引線框架
111‧‧‧導電材料
112‧‧‧絕緣性接著材料
113‧‧‧塗佈面
114‧‧‧連接面
120‧‧‧充放電控制用晶片
121、131‧‧‧表面
122、132‧‧‧背面
130‧‧‧保護用晶片
140‧‧‧接合線
150‧‧‧樹脂
171‧‧‧電極端子S1的配線
172‧‧‧電極端子S2的配線
200‧‧‧電池組
210‧‧‧配線基板
211‧‧‧配線基板210的構件安裝面
212‧‧‧配線基板210的背面
220‧‧‧二次電池
P-、P+、B-、B+‧‧‧端子
S1、S2、G1、G2、DOUT、COUT、V-、VDD、VSS、VPP‧‧‧電極端子
T1至T6‧‧‧端子
O‧‧‧中心點
圖1(A)及圖1(B)是說明本實施形態的電池保護裝置的圖。
圖2是說明本實施形態的電池保護裝置的製造步驟的圖。
圖3是說明搭載了本實施形態的電池保護裝置的電池組的一個例子的圖。
圖4是表示安裝了本實施形態的電池保護裝置的配線基板的等效電路的圖。
圖5(A)及圖5(B)是對從B-端子到P-端子之間的配線寬度進行說明的圖。
圖6(A)及圖6(B)是表示與本實施形態的比較例的圖。
以下參照圖式對實施形態進行說明。圖1(A)及圖1(B)是說明本實施形態的電池保護裝置的圖。圖1(A)是本實施形態的電池保護裝置的俯視透視圖,圖1(B)是圖1(A)中的A-A剖視圖。
本實施形態的電池保護裝置100具有引線框架110、充放電控制用晶片120、保護用晶片130、接合線140以及樹脂150。藉由樹脂150來密封引線框架110、充放電控制用晶片120、保護用晶片130以及接合線140。
本實施形態的電池保護裝置100例如與鋰離子電池等二次電池連接。充放電控制用晶片120包括充電控制FET與放電控制FET,根據來自保護用晶片130的控制信號,控制二次電池與負載或供電電源的斷開/連接。
保護用晶片130監控二次電池的兩端電壓等,並對充放電控制用晶片120輸出控制二次電池與負載或供電電源(充電器)的斷開/連接的控制信號。
本實施形態的引線框架110具有電極端子DOUT、 COUT、V-、VDD、VSS、VPP、G1、G2、S1、S2。該些電極端子成為電池保護裝置100的外部端子。各電極端子的細節會在後面進行描述。另外,在本實施形態中,在引線框架110中,將與塗佈有導電材料111的塗佈面113相對的面114稱為外部端子的連接面114。
本實施形態的充放電控制用晶片120被晶粒接著(die bonding)在導電材料111上,該導電材料111被塗佈在引線框架110的塗佈面113上。換言之,充放電控制用晶片120被配置在塗佈在電極端子G1、G2、S1、S2上的導電材料111上。
此時,以形成有電極(端子)的表面121與引線框架110的塗佈面113相對的方式,對充放電控制用晶片120進行晶粒接著。因此,在本實施形態中,充放電控制用晶片120的電極(端子)經由導電材料111與引線框架110形成的電極端子G1、G2、S1、S2電性連接。換言之,本實施形態的充放電控制用晶片120的端子與引線框架110所具有的外部端子的連接面114電性連接。
本實施形態的保護用晶片130在充放電控制用晶片120中,被配置在塗佈在未形成電極的背面122的絕緣性接著劑112上。此時,保護用晶片130被配置為:未形成電極的背面132與作為絕緣性構件的絕緣性接著劑112接 著。
在保護用晶片130中,形成有電極(端子)的表面131藉由接合線140與引線框架110的塗佈面113連接。更具體而言,形成於保護用晶片130的表面的電極(端子)T1至T6藉由接合線140在引線框架110的塗佈面113中分別與電極端子DOUT、COUT、V-、VDD、VSS、VPP連接。進一步,換言之,本實施形態的保護用晶片130的端子與引線框架110所具有的外部端子的連接面114電性連接。
如上前述,在本實施形態的電池保護裝置100中,不需要連接充放電控制用晶片120與引線框架110的接合線,削減了接合線相應分的電阻,因此有助於導通電阻的降低。另外,在本實施形態中,不需要接合線,相應地有助於封裝的小型化。
另外,在本實施形態中,充放電控制用晶片120所具有的電極(端子)與保護用晶片130的電極(端子)分別與形成於引線框架110的電極端子連接,並互不連接。
具體而言,充放電控制用晶片120所具有的電極(端子)與電極端子G1、G2、S1、S2連接。另外,保護用晶片130所具有的端子T1至T6與電極端子DOUT、COUT、V-、VDD、VSS、VPP連接。由此,在本實施形態的電池 保護裝置100中,不存在與充放電控制用晶片120與保護用晶片130雙方都連接的外部端子。
亦就是說,在本實施形態的電池保護裝置100中,在封裝內,充放電控制用晶片120與保護用晶片130被分離,各自藉由獨立的輸入信號來進行動作,並可以從各自獲得與輸入相對應的獨立的輸出信號。
因此,根據本實施形態,在進行電池保護裝置100的動作測試等之際,可俾使充放電控制用晶片120與保護用晶片130分別獨立地動作,可以容易地進行動作測試。進一步,根據本實施形態,例如當電池保護裝置100的動作中存在不良等時,可以分別從充放電控制用晶片120與保護用晶片130取得獨立的輸出信號,因此可以使故障、不良的原因的分析變得容易。
另外,在本實施形態中,設由引線框架110形成的電極端子的佈局被形成為:相對於電池保護裝置100的外部端子面101的中心點O為點對稱。另外,在本實施形態中,設充放電控制用晶片120亦被配置成相對於中心點O為點對稱。
另外,在本實施形態中,由引線框架110形成的電極端子的佈局被設為在外部端子面101中,電極端子G1與電極端子DOUT、電極端子G2與電極端子COUT分別相鄰。
此外,本實施形態的外部端子面101是指在電池保護裝置100中由引線框架110形成的電極端子所露出的面。針對基於本實施形態的電極端子的佈局的功效,會在後面進行描述。
接下來,參照圖2針對本實施形態的電池保護裝置100的製造步驟進行說明。圖2是說明本實施形態的電池保護裝置的製造步驟的圖。
在步驟(A)中,引線框架110形成於未圖示的不鏽鋼基板等上。此外,該不鏽鋼基板之後被剝離,俾使引線框架110形成的電極端子作為電池保護裝置100的外部端子而露出。
接下來,在步驟(B)中,導電材料111被塗佈在引線框架110上。本實施形態的導電材料111例如是焊接膏、銀膏等。另外,在本實施形態中,可以將導電材料111作為金凸塊、焊接凸塊等。
接下來,在步驟(C)中,充放電控制用晶片120通過倒裝晶片接合被安裝在導電材料111上。此時,充放電控制用晶片120被安裝成表面121與引線框架110的塗佈面113相向。因此,形成於充放電控制用晶片120的表面121的電極經由導電材料111與引線框架110電性連接。
接下來,在步驟(D)中,在充放電控制用晶片120的背面122塗佈了作為絕緣性構件的絕緣性接著劑112。接下來,在步驟(E)中,保護用晶片130被安裝在絕緣性接著劑112上。此時,保護用晶片130被安裝為背面132與絕緣性接著劑112接著。
接下來,在步驟(F)中,形成於保護用晶片130的表面131的電極與引線框架110的塗佈面113藉由引線接合而連接。具體而言,形成於表面131的端子(電極)T1至T6與電極端子DOUT、COUT、V-、VDD、VSS、VPP的各自藉由引線接合而連接。
此外,在本實施形態中,可以藉由逆向接合來進行連接形成於表面131的端子與引線框架110的引線接合。在本實施形態中,藉由逆向接合進行引線接合,由此可以抑制接合線140的迴路(loop)的高度,有助於封裝的小型化。
接下來,在步驟(G)中,使用樹脂150來密封充放電控制用晶片120、保護用晶片130以及接合線140。
接下來,參照圖3以及圖4,針對具有本實施形態的電池保護裝置100的電池控制系統進行說明。
圖3是說明搭載有本實施形態的電池保護裝置的電池組的一例的圖。在本實施形態的電池組200中,電池保護裝置100被安裝在配線基板210上,與二次電池220連接。配線基板210在背面具有P-端子與P+端子,在構件安裝面具有B-端子與B+端子(未圖示)。二次電池220具有作為負極端子的B-端子與作為正極端子的B+端子。
配線基板210的B+端子與作為二次電池220的正極端子的B+端子連接。配線基板210的B-端子與二次電池220的B-端子連接。
另外,P-端子與負載或供電電源的負極連接,P+端子與負載或供電電源的正極連接。此外,供電電源是指例如充電器等。
圖4是表示安裝了本實施形態的電池保護裝置的配線基板的等效電路的圖。
電池組200具有充放電控制用晶片120、保護用晶片130、二次電池220、電阻組件R1、R2以及電容組件C1、C2。
電阻組件R1、R2、電容組件C1、C2出於防止由靜電 破壞、閂鎖或外部雜訊所引起的誤動作、破壞等的目的,被安裝在配線基板210上。
在本實施形態的電池保護裝置100中,充放電控制用晶片120具有2個FET123、124。FET123是控制來自二次電池220的放電/放電停止的放電控制FET。FET124是控制對於二次電池220的充電/充電停止的充電控制FET。
本實施形態的保護用晶片130具有端子T1至T6。端子T1連接到電極端子DOUT,端子T2與電極端子V-連接,端子T3與電極端子VDD連接。端子T4與電極端子VSS連接、端子T5與電極端子VPP連接,端子T6與電極端子COUT連接。
與電極端子DOUT連接的端子T1是輸出控制信號的放電控制端子,該控制信號用於控制來自二次電池220的放電。
與電極端子COUT連接的端子T6是輸出控制信號的充電控制端子,該控制信號用於控制對於二次電池220的充電。
電極端子V-是與P-端子連接的充電器負極連接端子。電極端子VDD是與B+端子連接的正極連接端子。電極端子VSS是與B-端子連接的負極連接端子。
電極端子S1、VSS、VPP連接到二次電池220的B-端子,電極端子S2連接到充電器的P-端子。電極端子VDD經由電阻組件R1連接到二次電池220或充電器的P+端子。電極端子V-經由電阻組件R2連接到充電器的P-端子。電極端子DOUT連接到電極端子G1,電極端子COUT連接到電極端子G2。
電極端子G1與FET123的閘極端子連接,從保護用晶片130的電極端子DOUT輸出的控制信號經由電極端子G1被提供給充放電控制用晶片120的FET123的閘極端子。FET123藉由該控制信號來控制接通(ON)/斷開(OFF)。
電極端子G2與FET124的閘極端子連接,從保護用晶片130的電極端子COUT輸出的控制信號經由電極端子G2被提供給充放電控制用晶片120的FET124的閘極端子。FET124藉由該控制信號來控制接通/斷開。
另外,電極端子S1與充放電控制用晶片120的FET123的源極端子連接,電極端子S2與充放電控制用晶片120的FET124的源極端子連接。
FET123與FET124的汲極端子在充放電控制用晶片120內共通連接。因此,本實施形態的電池保護裝置100 在被安裝在配線基板等上之際,不需要將FET123、124的汲極端子在充放電控制用晶片120的外部進行連接,可以容易地安裝。
在電池組200中,在正常的動作中,從二次電池220向負載進行供電,或者在藉由充電器對二次電池220進行充電之際,由於充放電控制用晶片120處於接通狀態,因此從端子B-到端子P-之間流過電流。此時,如果充放電控制用晶片120的導通電阻高,則伴隨發熱產生電力損失。因此,特別期望的是當從端子B-向端子P-之間流過大電流等時,從端子B-到端子P-之間的電阻小。
在本實施形態的電池保護裝置100中,在安裝充放電控制用晶片120時,不使用接合線,因此可以去除接合線的相應分的電阻。
進一步,在本實施形態的電池保護裝置100中,通過倒裝晶片接合,導電材料111被塗佈在成為FET123、124的源極焊盤的電極端子S1、S2的整個面上。因此,根據本實施形態,可以降低充放電控制用晶片120的導通電阻,並可以抑制由導通電阻所引起的損失。
在這裡,針對基於本實施形態的電池保護裝置100的外部端子面101中的電極端子的佈局的功效進行說明。
在本實施形態中,從B-端子到P-端子之間成為電流路徑。換言之,在本實施形態中,電池保護裝置100的電極端子S1與電極端子S2之間成為電流路徑。因此,從B-端子到P-端子之間,為了抑制由電阻、發熱所引起的電力損失,需要盡量增大配線寬度來進行基板設計。
因此,在本實施形態的電池保護裝置100中,電極端子在外部端子面101中,形成為相對於外部端子面101的中心點O是點對稱(參照圖1(A))。換言之,在本實施形態的電池保護裝置100中,充放電控制用晶片120形成為相對於中心點O是點對稱。
在本實施形態中,藉由如此佈局電極端子,在配線基板210中,可以增大從B-端子到P-端子之間的配線的寬度。
圖5(A)及圖5(B)是對從B-端子到P-端子之間的配線寬度進行說明的圖。圖5(A)表示配線基板210的構件安裝面(表面),圖5(B)表示配線基板210的背面。
在圖5(A)及圖5(B)的例子中,在配線基板210的構件安裝面(表面)211安裝有電池保護裝置100,形成了B-端子、B+端子。另外,在配線基板210的背面212形成有P-端子、P+端子。
在本實施形態中,電極端子S1與電極端子S2的位置相對於外部端子面101的中心點O為點對稱。因此,B-端子與電極端子S1之間不會被其他配線妨礙,可以容易地將連接B-端子與電極端子S1的配線171的寬度增大到在配線基板210中可以取的最大寬度。
B+端子與電極端子S2之間亦同樣地不會被其他配線妨礙,可以容易地將連接B+端子與電極端子S2的配線172的寬度增大到在配線基板210中可以取的最大寬度。
另外,在本實施形態中,電池保護裝置100被配置為配線基板210的長邊與外部端子面101的長邊大致平行,但是電池保護裝置100的配置方法並不限定於此。
本實施形態的電池保護裝置100例如即使在以配線基板210的短邊與外部端子面101的長邊為大致平行的方式被安裝在配線基板210上時,電極端子亦被點對稱地配置,因此可以獲得與圖5(A)、圖5(B)所示的例子同樣的功效。
亦就是說,B-端子與電極端子S1之間與B+端子與電極端子S2之間,分別不會被其他配線妨礙,可以容易地將連接各自的端子的配線的寬度增大到在配線基板210中可 以取的最大寬度。
更且,在本實施形態的電池保護裝置100中,電極端子DOUT與電極端子G1、電極端子COUT與電極端子G2還分別被配置為相鄰。
從電極端子DOUT輸出的控制信號被提供給電極端子G1。另外,從電極端子COUT輸出的控制信號被提供給電極端子G2。
因此,在本實施形態中,如上前述,藉由將電極端子DOUT與電極端子G1、電極端子COUT與電極端子G2分別配置為相鄰,可以簡單地、沒有浪費地在端子間連接。
圖6(A)及圖6(B)是表示與本實施形態的比較例的圖。圖6(A)是比較例的電池保護裝置的俯視透視圖,圖6(B)是圖6(A)的側面透視圖。
在圖6(A)及圖6(B)所示的電池保護裝置60中,在塗佈在引線框架61上的導電材料62上接著充放電控制用晶片63。此時,充放電控制用晶片63被配置為:未形成電極的背面631與導電材料62相接著。
在充放電控制用晶片63中,在形成了電極的表面632 塗佈有絕緣性接著劑64,並在其上接著保護用晶片65。
然後,充放電控制用晶片63的表面632與引線框架61藉由接合線66進行連接,保護用晶片65的表面651與引線框架61藉由接合線67進行連接。
因此,在圖6(A)、圖6(B)所示的電池保護裝置60中,連接引線框架61與充放電控制用晶片63的接合線66的電阻與充放電控制用晶片63的導通電阻相加,導通電阻增大。
相反地,在應用了本實施形態的電池保護裝置100中,不需要連接充放電控制用晶片120與引線框架110的接合線,因此不會增大導通電阻。在本實施形態中,還可以將導電材料111塗佈在充放電控制用晶片120的源極焊盤的整個面上來與引線框架110連接,因此可以進一步降低充放電控制用晶片120與引線框架110的連接中的電阻。
以上,根據實施形態進行了本發明的說明,但是本發明並不限定於上述實施形態所示的要件。關於該些方面,可以在不損害本發明的主旨的範圍內進行變更,並可以根據其應用方式進行適當的規定。

Claims (5)

  1. 一種電池保護裝置,用於防止二次電池中的過充電、過放電以及過電流且為已被形成為一個封裝的電池保護裝置;前述電池保護裝置具備:充放電控制晶片,具備連接至前述二次電池的充電控制場效電晶體與放電控制場效電晶體;保護晶片,係根據前述二次電池的兩端電壓控制前述充電控制場效電晶體與前述放電控制場效電晶體來防止前述二次電池的過充電、過放電以及過電流;以及引線框架,具有複數個外部端子的連接面以及與前述連接面導通的另一面;前述引線框架的前述另一面與形成於前述充放電控制晶片的表面的前述充電控制場效電晶體以及前述放電控制場效電晶體的端子係經由導電材料電性連接;前述保護晶片以前述保護晶片的背面相向的方式經由絕緣性構件被安裝在前述充放電控制晶片的背面;前述保護晶片的端子與前述引線框架的前述另一面係藉由接合線電性連接;前述充放電控制晶片與前述保護晶片被樹脂覆蓋。
  2. 如請求項1所記載之電池保護裝置,其中前述充電控制場效電晶體與前述放電控制場效電晶體係在前述充放電控制晶片內將汲極共通連接。
  3. 如請求項2所記載之電池保護裝置,其中相對於在前述電池保護裝置中前述複數個外部端子露出的外部端子面的中心點,前述複數個外部端子的佈局是點對稱。
  4. 如請求項1至3中任一項所記載之電池保護裝置,其中前述保護晶片的端子與前述充放電控制晶片的端子各自獨立。
  5. 如請求項1所記載之電池保護裝置,其中前述複數個外部端子中與前述保護晶片的充電控制端子連接的外部端子及與前述充電控制場效電晶體的閘極端子連接的外部端子係被相鄰地配置;前述複數個外部端子中與前述保護晶片的放電控制端子連接的外部端子及與前述放電控制場效電晶體的閘極端子連接的外部端子係被相鄰地配置。
TW106126379A 2016-08-12 2017-08-04 電池保護裝置 TWI770043B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016158801A JP6764112B2 (ja) 2016-08-12 2016-08-12 電池保護装置
JP2016-158801 2016-08-12

Publications (2)

Publication Number Publication Date
TW201822420A true TW201822420A (zh) 2018-06-16
TWI770043B TWI770043B (zh) 2022-07-11

Family

ID=61159521

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106126379A TWI770043B (zh) 2016-08-12 2017-08-04 電池保護裝置

Country Status (5)

Country Link
US (1) US10170919B2 (zh)
JP (1) JP6764112B2 (zh)
KR (1) KR102361291B1 (zh)
CN (1) CN107732329B (zh)
TW (1) TWI770043B (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102128868B1 (ko) * 2019-07-11 2020-07-01 주식회사 아이티엠반도체 배터리 보호회로 패키지 및 그 제조방법
USD929337S1 (en) 2019-09-05 2021-08-31 Techtronic Cordless Gp Electrical interface
USD929338S1 (en) 2019-09-05 2021-08-31 Techtronic Cordless Gp Electrical interface
USD929336S1 (en) 2019-09-05 2021-08-31 Techtronic Cordless Gp Electrical interface
USD953268S1 (en) 2019-09-05 2022-05-31 Techtronic Cordless Gp Electrical interface
USD1012855S1 (en) 2019-09-05 2024-01-30 Techtronic Cordless Gp Battery pack
USD929335S1 (en) 2019-09-05 2021-08-31 Techtronic Cordless Gp Electrical interface
USD929334S1 (en) 2019-09-05 2021-08-31 Techtronic Cordless Gp Electrical interface
USD929339S1 (en) 2019-09-05 2021-08-31 Techtronic Cordless Gp Electrical interface
KR20210105212A (ko) * 2020-02-18 2021-08-26 주식회사 아이티엠반도체 배터리 제어 시스템 인 패키지 및 그 제조 방법

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6249041B1 (en) * 1998-06-02 2001-06-19 Siliconix Incorporated IC chip package with directly connected leads
JP2001244376A (ja) * 2000-02-28 2001-09-07 Hitachi Ltd 半導体装置
JP2002217416A (ja) * 2001-01-16 2002-08-02 Hitachi Ltd 半導体装置
JP2005011986A (ja) * 2003-06-19 2005-01-13 Sanyo Electric Co Ltd 半導体装置
JP3983205B2 (ja) * 2003-07-08 2007-09-26 沖電気工業株式会社 半導体装置及びその製造方法
JP2005151219A (ja) * 2003-11-17 2005-06-09 Matsushita Electric Ind Co Ltd ポリフェーズフィルタ
WO2005067040A1 (en) * 2004-01-06 2005-07-21 Philips Intellectual Property & Standards Gmbh Electrical component with bond wire
JP2006128169A (ja) * 2004-10-26 2006-05-18 Fujitsu Ltd 半導体装置及び半導体装置の製造方法
US7884454B2 (en) * 2005-01-05 2011-02-08 Alpha & Omega Semiconductor, Ltd Use of discrete conductive layer in semiconductor device to re-route bonding wires for semiconductor device package
JP4882235B2 (ja) * 2005-01-27 2012-02-22 ミツミ電機株式会社 電池保護用モジュール
JP2005167286A (ja) * 2005-03-10 2005-06-23 Sanyo Electric Co Ltd 半導体装置およびその製造方法
JP2006324320A (ja) * 2005-05-17 2006-11-30 Renesas Technology Corp 半導体装置
JP5205368B2 (ja) 2007-04-19 2013-06-05 株式会社日立超エル・エス・アイ・システムズ 電池制御装置
JP4750076B2 (ja) * 2007-05-24 2011-08-17 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP4968528B2 (ja) * 2007-08-24 2012-07-04 富士電機株式会社 3レベル電力変換装置
JP5165543B2 (ja) 2008-11-28 2013-03-21 株式会社日立超エル・エス・アイ・システムズ 電池監視装置と電池監視用半導体装置
JP5631549B2 (ja) * 2009-02-13 2014-11-26 セイコーインスツル株式会社 バッテリーの保護回路装置
JP2010267640A (ja) * 2009-05-12 2010-11-25 Hitachi Ulsi Systems Co Ltd パワーmosfetと電池監視装置
KR101054888B1 (ko) * 2009-12-21 2011-08-05 주식회사 아이티엠반도체 배터리 보호회로의 통합칩 배치구조
KR101279109B1 (ko) * 2011-10-11 2013-06-26 주식회사 아이티엠반도체 배터리 보호회로의 패키지모듈
JP2013258387A (ja) * 2012-05-15 2013-12-26 Rohm Co Ltd パワーモジュール半導体装置
JP6063713B2 (ja) * 2012-11-08 2017-01-18 ルネサスエレクトロニクス株式会社 電池保護システム
KR101420186B1 (ko) * 2012-12-17 2014-07-21 주식회사 아이티엠반도체 배터리 보호 모듈 패키지
KR101450220B1 (ko) * 2013-04-17 2014-10-15 주식회사 아이티엠반도체 배터리 보호회로 모듈 패키지
CN105324871B (zh) * 2013-07-01 2018-09-11 Itm半导体有限公司 电池保护电路模块封装、电池组以及具备该电池组的电子装置
CN105378977B (zh) * 2013-07-19 2018-04-10 Itm半导体有限公司 电池保护电路模块封装与固定架相结合的结构体以及具备该结构体的电池组
KR101594783B1 (ko) * 2014-05-22 2016-02-18 주식회사 아이티엠반도체 와이어를 이용한 션트저항을 갖는 배터리 보호 ic 장치
KR20160025310A (ko) * 2014-08-27 2016-03-08 주식회사 아이티엠반도체 배터리 보호회로 패키지
CN107078067A (zh) * 2015-03-30 2017-08-18 瑞萨电子株式会社 半导体装置及其制造方法

Also Published As

Publication number Publication date
TWI770043B (zh) 2022-07-11
US20180048167A1 (en) 2018-02-15
JP2018026982A (ja) 2018-02-15
KR20180018296A (ko) 2018-02-21
KR102361291B1 (ko) 2022-02-10
CN107732329A (zh) 2018-02-23
JP6764112B2 (ja) 2020-09-30
CN107732329B (zh) 2022-03-25
US10170919B2 (en) 2019-01-01

Similar Documents

Publication Publication Date Title
TWI770043B (zh) 電池保護裝置
US7030501B2 (en) Semiconductor device and switching element
KR102382635B1 (ko) 전력 반도체의 웨이퍼 레벨 칩 스케일 패키지 및 제조 방법
KR101450221B1 (ko) 배터리 보호회로 모듈 패키지
US20060118866A1 (en) Semiconductor device
JP4190510B2 (ja) 二次電池の保護回路モジュール及びそれを用いた電池パック
CN105324871A (zh) 电池保护电路模块封装、电池组以及具备该电池组的电子装置
US20180233785A1 (en) Battery protection circuit module and battery pack comprising same
TWI686917B (zh) 半導體裝置及使用其之便攜式設備
TWI565190B (zh) 電池保護電路封裝體
WO2015002401A1 (ko) 배터리 보호회로 모듈 패키지, 배터리 팩 및 이를 구비하는 전자장치
JP7325384B2 (ja) 半導体装置の製造方法
JP2008117962A (ja) 半導体リレー
KR101054890B1 (ko) 배터리 보호회로의 본딩패드 배치구조
KR101749247B1 (ko) 배터리 보호회로, 배터리 보호회로 패키지 및 이를 포함하는 배터리 팩
US7034344B2 (en) Integrated semiconductor power device for multiple battery systems
KR101487958B1 (ko) 배터리 보호회로 모듈 패키지 및 그 제조방법
JP2001135361A (ja) 電池保護装置
JP4688554B2 (ja) 電子部品実装体の製造方法
KR101595501B1 (ko) 배터리 보호회로 모듈 패키지 및 배터리 팩
JP2012151202A (ja) 半導体集積回路装置
WO2014168441A1 (ko) 배터리 보호회로 패키지모듈
WO2014171757A1 (ko) 배터리 보호회로 모듈 패키지
JP2001203220A (ja) スイッチング素子のベアチップの実装構造