TW201803189A - 用於無遮罩薄膜蝕刻的裝置和方法 - Google Patents

用於無遮罩薄膜蝕刻的裝置和方法 Download PDF

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TW201803189A
TW201803189A TW106111996A TW106111996A TW201803189A TW 201803189 A TW201803189 A TW 201803189A TW 106111996 A TW106111996 A TW 106111996A TW 106111996 A TW106111996 A TW 106111996A TW 201803189 A TW201803189 A TW 201803189A
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gas
ablation
ablation tool
suction member
tool
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裕德 楊
傑佛瑞Ｌ 法蘭克林
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應用材料股份有限公司
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Abstract

一種用於無遮罩薄膜蝕刻的裝置，包括：消融工具，適以發射用於蝕刻表面的消融輸出；氣體噴射器，與載氣的源相關聯，並適以在表面的區域處發射載氣的流，其中消融工具的輸出衝擊該區域；及抽吸構件，與真空源相關聯，且適以從消融工具的輸出而衝擊的表面的區域收集消融的顆粒，其中消融工具、氣體噴射器和抽吸構件彼此相鄰地安裝。

Description

用於無遮罩薄膜蝕刻的裝置和方法
本申請案主張2016年4月14日提交的名稱為「Volume Change Accommodating TFE Materials」的美國臨時專利申請案第62/322,415號，且藉由引用其全文的方式而併入於此。
本實施例大體上涉及薄膜裝置的製造，且更特定地涉及用於製造薄膜電池的無遮罩蝕刻裝置和技術。
已知固態薄膜電池（TFB）呈現有優於傳統電池技術的若干優點。這些優點包括優異的形成因素、循環壽命、功率能力和安全性。TFB的實施例可包括設置在堆疊佈置中的複數個層，此些層包括(例如)陰極集電器層、陰極層、固態電解質、陽極層、陽極集電器層及封裝層。這些層通常藉由使用沉積工具在基板上連續沉積層而形成。在沉積某些層之後，可在沉積另外的層之前移除或「蝕刻」層的部分。以這種方式，可實現具有預定層輪廓或架構的TFB。
傳統上，使用所謂的「遮罩」蝕刻技術實現了TFB層的蝕刻，「遮罩」蝕刻技術涉及使用放置於待蝕刻的層（或多個層）上的實體遮罩。遮罩覆蓋層的某些部分，並使其他部分曝露。經遮罩的層經受毯覆消融（如，經由曝露於熱、溶劑、離子轟擊等），導致經遮罩的層的曝露部分被移除，而覆蓋部分保持完整。
最近，已經發展了所謂的「無遮罩」蝕刻技術，用於在製造期間選擇性地移除TFB層的部分。無遮罩蝕刻涉及使用精密消融工具（如，雷射）來蝕刻TFB層（或多個層）的分離部分，同時使層的其它部分保持完整。儘管相對於遮罩蝕刻，成本較低且促進較高的產量，但是無遮罩蝕刻仍然與某些缺點相關聯。例如，雷射消融工具可能產生電漿且可產生緊鄰消融光束路徑的所謂「熱影響區域」（HAZ），可能損壞蝕刻層的部分。雷射消融工具還可將消融的顆粒物質分散在消融光束路徑附近。這些現象之任一者可能促進受影響層中的洩漏電流的傳播，導致有缺陷的或次標準的TFB。
在這些和其他考慮的方面上，提供了本揭露書。
以簡化的形式提供此發明內容，以引入在進一步描述於下的實施方式中的概念的選擇。此發明內容不意欲確定所要求保護的標的的關鍵或必要特徵，此發明內容亦不意欲作為確定所要求保護的標的的範圍的輔助。
根據本揭露書的用於無遮罩薄膜蝕刻的裝置的示例性實施例可包括：消融工具；氣體噴射器，與載氣的源相關聯並適以發射載氣的流；及抽吸構件，與真空源相關聯，且適以收集氣體和顆粒。消融工具、氣體噴射器和抽吸構件彼此相鄰地安裝。
根據本揭露書的用於無遮罩薄膜蝕刻的裝置的另一示例性實施例可包括：消融工具，適以發射用於蝕刻表面的消融輸出。裝置可進一步包括：氣體噴射器，與載氣的源相關聯，並適以在消融工具的輸出衝擊的表面的區域處發射載氣的流。裝置可進一步包括：抽吸構件，與真空源相關聯，且適以從消融工具的輸出衝擊的表面的區域收集消融的顆粒。消融工具、氣體噴射器和吸引構件彼此相鄰地安裝。
根據本揭露書的無遮罩薄膜蝕刻的方法的示例性實施例可包括以下步驟：將消融工具定位在待蝕刻表面附近。方法可進一步包括以下步驟：將氣體噴射器定位在消融工具附近，其中氣體噴射器與載氣的源相關聯，且適以發射載氣的流；及將抽吸構件定位在消融工具附近，其中抽吸構件與真空源相關聯，且適以收集氣體和顆粒。
現在將參照附隨的圖式在此後更全面地描述本實施例，在附隨的圖式中顯示了一些實施例。本揭露書的標的可以許多不同的形式而實施，且不應被解釋為限於於此所闡述的實施例。提供了這些實施例，因此本揭露書將是徹底和完整的，且將向熟悉本領域者充分傳達標的的範圍。在圖式中，類似的元件符號從頭到尾指的是類似的元件。
本揭露書涉及一種在製造期間無遮罩地蝕刻薄膜電池（TFB）的層的裝置和方法。特別地，所揭露的裝置和方法涉及減輕與無遮罩消融技術相關聯的製造缺陷，且特別涉及那些源於TFB層的消融區域附近的消融顆粒的電漿產生和再沉積的缺陷。
通常，所揭露的裝置和方法可包括用於在層已經沉積在基板上之後蝕刻TFB的層的分離的、預定的部分的消融工具（如，雷射）。所揭露的裝置和方法進一步包括氣體噴射器和鄰近消融工具而設置的抽吸構件。氣體噴射器可耦接到含有加壓的載氣的氣體源，且可經配置以將加壓載氣的流引導到消融工具衝擊在消融表面上的點（如， TFB的層的表面）。抽吸構件可耦接到真空源且可經配置以將氣體和顆粒吸引遠離消融工具衝擊在消融表面上的點。因此，從氣體噴射器發射的加壓的載氣可提供用於夾帶由消融工具所產生的消融顆粒的介質，且抽吸構件可將載氣和夾帶的顆粒從消融部位排出。從而防止消融顆粒再沉積在蝕刻的表面上。在各種實施例中，載氣可為選擇用於抑制在消融部位附近的電漿形成的能力的惰性氣體，用於減輕在蝕刻表面的周圍部分中的熱影響區域（HAZ）的產生。
如將理解的，所揭露的裝置和方法可在製造各種不同的TFB架構中實現。第 1 圖 顯示了能修改以使用於此所述的裝置和方法製造的非限制性、示例性的TFB 10的剖視圖。所示的TFB 10可包括在基板14上製造的層12的堆疊。層12的堆疊可包括陰極集電器（CCC）層16、陰極層18、固態電解質層20、陽極/陽極集流器（ACC）層24及封裝層26。在一個非限制性的實施例中，封裝層26可由複數個交替的聚合物層28和介電層29所形成，以提供封裝層26彈性，以適應TFB 10的熱膨脹和收縮。CCC可由能夠對基板14良好黏著且能夠耐受陰極層18的高溫退火的金屬層（如，Au或Pt）或複數個金屬層（如，Ti和Au或Ti和Pt）所形成。陰極層18可由鈷酸鋰（LiCoO2 ）或類似材料所形成。固態電解質層20可由磷酸鋰鋰（LiPON）或類似材料所形成。ACC層24可由銅或類似材料所形成。
於此所揭露的裝置和方法可用以蝕刻TFB 10的各個層12的部分，因為各個層12沉積在基板14的頂部（如，在沉積之間），以實現預定的TFB結構。例如，第 1 圖 中所示的TFB 10具有所謂的「非共平面的」結構，其中CCC層16不與ACC層24共平面。第 1 圖 僅顯示了可修改以使用以下所述的裝置和方法而製造的TFB架構的一種可能佈置，且熟悉本領域者將理解於此所揭露的概念可被實現以達成各種其它的TFB架構。此種替代架構的非限制性例子是所謂「共平面」架構，具有與ACC層共平面的CCC層。
參考第 2 圖 ，顯示了根據本揭露書的非限制性實施例的蝕刻裝置30（以下稱為「裝置30」）的示意圖。裝置30通常可包括消融工具32、氣體噴射器34和在可移動的承載臂38上彼此相鄰安裝的抽吸構件36。承載臂38可適以選擇性地相對於待蝕刻的表面44（如，TFB的層的表面）而垂直地和水平地移動消融工具32、氣體噴射器34及抽吸構件36，如下面進一步所述的。在各種替代實施例中，裝置30可具有固定的、靜態的位置（如，省略可移動的承載臂），且表面44可相對於裝置30而垂直地和水平地移動。在各種其它實施例中，裝置30和表面44可為可移動的。
消融工具32可為(且將在之後描述為)適以從消融工具32的尖端48發射雷射束46的雷射，如第 2 圖 中所示。在各種替代實施例中，消融工具32可為任何類型的精密消融裝置，諸如適以發出懸浮在加壓氣體流中的研磨介質（如，矽砂）的射流的介質射流或衝擊器。研磨介質消融可提供相對於雷射消融的某些優點，包括在表面44上不存在雷射感應的電漿和相關聯的HAZ。在其它實施例中，蝕刻裝置30可包括能夠選擇性地和互換性地實現的雷射和介質射流。在消融工具32是雷射的各種實施例中，雷射可為獨立於承載臂38的雷射掃描器，且能夠以50米/秒或更高的速度掃描雷射束，這比透過承載臂38的機械運動所可達成的速度更快。
消融工具32可被可操作地連接到電功率源50和控制器52。控制器52可適以以預定或預編程方式來指示承載臂38和消融工具32的操作，諸如用以蝕刻表面44中的預定義的圖案。若消融工具32是經配置以發射研磨介質的射流的介質衝擊器或類似裝置，則消融工具32可另外耦接到如可為適當的加壓氣體源並耦接到研磨介質源（未顯示）。
裝置30的氣體噴射器34可耦接到加壓載氣源54，且可經配置以從氣體噴射器34的尖端58發射加壓載氣的流56，尖端58靠近（如，在0.25毫米至300毫米的範圍中）消融工具32的尖端48而設置。流56可指向藉由消融工具32所發射的雷射束46衝擊的表面44的區域58。氣體噴射器34可進一步耦接到控制器52，其中控制器52可經配置以指示氣體噴射器34的操作。例如，控制器52可經配置以與消融工具32一致地操作氣體噴射器34，當消融工具32處於活動狀態時，氣體噴射器34被致動。在各種實施例中，控制器52可經配置以在致動消融工具32之前或之後致動氣體噴射器34一段預定的時間量，且可經配置以在停用消融工具32之前或之後停用氣體噴射器34一段預定的時間量。本揭露書的實施例在這方面不受限制。
在各種實施例中，由氣體噴射器34所發射的載氣可為適合在表面44附近使用的任何氣體。此些氣體的例子包括具有小於或等於8％含水量的乾凈、乾燥空氣（CDA）、氬氣、氮氣等。在各種實施例中，可特別選擇載氣以為了用以抑制藉由消融工具32所發射的在雷射束46衝擊的區域58處形成雷射感應電漿的形成的能力。此些惰性氣體的非限制性例子包括氬氣、氮氣等。在區域58處抑制雷射感應電漿可減輕表面44的周圍部分中HAZ的形成。更通常，載氣可基於諸如藉由消融工具32所發射的雷射的類型和功率、表面44的環境的性質、表面44的材料等的因素而選擇。
裝置30的抽吸構件36可耦接到真空源60，且可經配置以在抽吸構件36的入口62處收集氣體及/或顆粒（如近一步於下所述），抽吸構件36設置成鄰近 （如，距消融工具32的尖端48在0.25毫米至300毫米的範圍中）消融工具32的尖端48。具體來說，入口62可設置在由氣體噴射器34所發射的載氣的流56的路徑中，且可指向雷射束46衝擊在表面44上的區域58。抽吸構件36可進一步耦接到控制器52，其中控制器52可經配置以指示抽吸構件36的操作。例如，控制器52可經配置以與消融工具32及/或氣體噴射器34一致地操作抽吸構件36，其中當消融工具32及/或氣體噴射34是活動的時，抽吸構件36被致動。在各種實施例中，控制器52可經配置以在致動消融工具32及/或氣體噴射器34之前或之後致動抽吸構件36一段預定的時間量，且可經配置以在停用消融工具32及/或氣體噴射器34之前或之後停用抽吸構件36一段預定的時間量。本揭露書的實施例在這方面不受限制。
在裝置30的操作期間，抽吸構件36可從衝擊區域58收集蒸氣和消融的顆粒，其中消融的顆粒可懸浮在從氣體噴射器34所發射的加壓載氣的流56中。若消融工具32是經配置以發射研磨介質射流的介質衝擊器或類似裝置，抽吸構件36可收集由消融工具32所發射的介質（亦即，在介質已經衝擊在表面44上之後）以及任何懸浮介質的氣體。介質和懸浮氣體可藉由從氣體噴射器34所發射的加壓載氣的流56而引導到抽吸構件36的入口62。因此，抽吸構件36可防止消融的顆粒和任何研磨介質（若使用研磨介質的話）沉積在表面44上，減輕與此種沉積相關聯的任何不期望的影響。抽吸構件36還可防止在表面44的環境中由氣體噴射器34所發射的載氣的分佈和積聚。
參考第 3 圖 ，顯示有流程圖，流程圖顯示根據本揭露書的用於實現裝置30的方法的示例性實施例。現在將結合第 2 圖 中所示的裝置30的示意圖而詳細地描述該方法。
在所示方法的方塊100處，裝置30的承載臂38可經操作以將消融工具32、氣體噴射器34和抽吸構件36移動到待被蝕刻的表面（如，在第 2 圖 中所示的表面44）之上方的指定位置。承載臂38的移動可藉由控制器52而指定和協調，且指定位置可為其中消融工具32的尖端48直接定位在待在表面44中被蝕刻的預定圖案的起點之上方的位置。
在所示方法的方塊110處，消融工具32可被致動（如，藉由控制器52），且可發射雷射束46（若消融工具32是雷射的話）或研磨介質的射流(若消融工具32是介質噴射或衝擊器的話）(統稱為消融工具32的「輸出」)，以蝕刻輸出所衝擊的表面44的區域58。
在所示方法的方塊120處，氣體噴射器34可被致動（如，藉由控制器52），且可從氣體噴射器34的尖端58朝向表面44上的衝擊區域58發射加壓載氣的流56。氣體噴射器34可與消融工具32一致地操作，其中當消融工具32被致動時，氣體噴射器34被致動。在各種實施例中，氣體噴射器34可在消融工具32的致動之前或之後被致動一段預定的時間量。如上所述，載氣的流56可在衝擊區域58附近夾帶消融的顆粒。另外，若載體被適當地選擇（如，若載氣是惰性氣體的話），則載氣可在衝擊區域58處抑制雷射感應電漿的形成，減輕鄰近衝擊區域58的HAZ的形成。
在所示方法的方塊130處，抽吸構件36可被致動（如，藉由控制器52）且可從衝擊區域58收集蒸氣和消融的顆粒，其中消融的顆粒可懸浮在從氣體噴射器34所排出的加壓載氣的流56中。若消融工具32是經配置以發射研磨介質射流的介質衝擊器或類似裝置，則抽吸構件36可收集由消融工具32所發射的介質（亦即，在介質衝擊在表面44上之後）及懸浮介質的任何氣體。介質和懸浮氣體可藉由從氣體噴射器34所發射的加壓載氣的流56而引導到抽吸構件36的入口62。因此，抽吸構件36可防止消融的顆粒和研磨介質（若使用研磨介質的話）沉積在表面44上，減輕與此種沉積相關聯的任何不期望的影響。抽吸構件36還可防止在表面44的環境中由氣體噴射器34所發射的載氣的分佈和積聚。抽吸構件36可與消融工具32及/或氣體噴射器34一致地操作，其中當消融工具32及/或氣體噴射器34被致動時，抽吸構件36被致動。在各種實施例中，抽吸構件36可在致動消融工具32及/或氣體噴射器34之前或之後被致動一段預定的時間量。
在所示方法的方塊140處，控制器52可操作承載臂38以沿相對於表面44的預定路徑而移動消融工具32、氣體噴射器34和抽吸構件36，諸如用於在表面44中蝕刻預定的圖案。例如，活動的消融工具32可沿著界定預定圖案的路徑而移動。若消融工具32未安裝在承載臂38上（如，若消融工具32是雷射掃描儀的話），則控制器52可操作消融工具32以預先界定的圖案衝擊在表面44上。預先界定的圖案可儲存在控制器52的記憶體中，或可經由(例如)外部輸入裝置而傳送到控制器52。當圖案在表面44中蝕刻時，活動的氣體噴射器34和抽吸構件36可以以上所述的方式操作，以收集蒸汽和顆粒，並抑制在蝕刻表面44中雷射感應電漿的形成。
在所示方法的方塊150處，在將預定圖案蝕刻到表面44中之後，消融工具32、氣體噴射器34和抽吸構件36可被停用（如，藉由控制器52）。在各種實施例中，氣體噴射器34可在停用消融工具32之前或之後被致動一段預定的時間量，且抽吸構件36可在停用消融工具32及/或氣體噴射器34之前或之後停用一段預定的時間量。
本揭露書的裝置和方法提供了許多優點。這些包括TFB層的精確的無遮罩蝕刻，同時抑制雷射感應電漿（在雷射消融的情況下），並防止蝕刻材料沉積在蝕刻層上。本揭露書的裝置和方法進一步促進了使用研磨介質的TFB層的高精度消融，同時防止研磨介質沉積在蝕刻層上。因此，減少了蝕刻層中的HAZ和洩漏電流，促進製造更好效能和更可靠的TFB。
本揭露書的範圍不受於此所述的具體實施例的限制。實際上，除了於此所描述的那些實施例之外，本揭露書的其它各種實施例和對本揭露書的修改對於熟悉本領域者而言將從前述的實施方式和附隨的圖式中變得顯而易見。因此，此些其他的實施例和修改意欲落在本揭露書的範圍內。此外，本揭露書已針對特定目的在特定環境中的具體實施方式的上下文中而描述於此，而熟悉本領域者將認識到有用性不限於此，且本揭露書可為了任何數量的目的而有利地實現在任何數量的環境中。因此，以下所闡述的申請專利範圍將被用於解釋於此所述的本揭露書的全部廣度和精神。
10‧‧‧TFB
12‧‧‧層
14‧‧‧基板
16‧‧‧陰極集電器（CCC）層
18‧‧‧陰極層
20‧‧‧固態電解質層
24‧‧‧陽極集流器（ACC）層
26‧‧‧封裝層
28‧‧‧聚合物層
29‧‧‧介電層
30‧‧‧裝置
32‧‧‧消融工具
34‧‧‧氣體噴射器
36‧‧‧抽吸構件
38‧‧‧承載臂
44‧‧‧表面
46‧‧‧雷射束
48‧‧‧尖端
50‧‧‧功率源
52‧‧‧控制器
54‧‧‧源
56‧‧‧流
58‧‧‧尖端/區域
60‧‧‧真空源
62‧‧‧入口
100‧‧‧方塊
110‧‧‧方塊
120‧‧‧方塊
130‧‧‧方塊
140‧‧‧方塊
150‧‧‧方塊
第 1 圖 是顯示設想用於藉由所揭露的裝置和方法而製造的示例性薄膜電池結構的剖視圖；
第 2 圖 是根據本揭露書的蝕刻裝置的示例性實施例的示意圖；
第 3 圖 是顯示根據本揭露書的示例性方法的流程圖。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無
(請換頁單獨記載) 無
30‧‧‧裝置
32‧‧‧消融工具
34‧‧‧氣體噴射器
36‧‧‧抽吸構件
38‧‧‧承載臂
44‧‧‧表面
46‧‧‧雷射束
48‧‧‧尖端
50‧‧‧功率源
52‧‧‧控制器
54‧‧‧源
56‧‧‧流
58‧‧‧尖端/區域
60‧‧‧真空源
62‧‧‧入口

Claims (15)

  1. 一種用於無遮罩薄膜蝕刻的裝置，包含： 一消融工具；一氣體噴射器，與載氣的一源相關聯並適以發射該載氣的一流；及一抽吸構件，與一真空源相關聯，且適以收集氣體和顆粒；其中該消融工具、該氣體噴射器和該抽吸構件彼此相鄰地安裝。
  2. 如請求項1所述之裝置，其中該消融工具、該氣體噴射器和該抽吸構件彼此相鄰地安裝在一承載臂上，其中該承載臂適以相對於待蝕刻的表面而移動該消融工具、該氣體噴射器和該抽吸構件。
  3. 如請求項1所述之裝置，其中該消融工具是一雷射。
  4. 如請求項1所述之裝置，其中該消融工具適以發射一研磨介質。
  5. 如請求項1所述之裝置，其中該氣體噴射器適以在該消融工具的一輸出衝擊的一表面的一區域處發射該載氣的該流。
  6. 如請求項1所述之裝置，其中該載氣是為了用以抑制雷射感應電漿的形成的一能力而選擇的一惰性氣體。
  7. 如請求項1所述之裝置，進一步包含一控制器，操作性地耦接到該消融工具、該氣體噴射器和該抽吸構件並經配置成以一預定義的、協調的方式而操作該消融工具、該氣體噴射器和該抽吸構件。
  8. 一種用於無遮罩薄膜蝕刻的裝置，包含： 一消融工具，適以發射用於蝕刻一表面的一消融輸出；一氣體噴射器，與載氣的一源相關聯，並適以在該消融工具的輸出衝擊的該表面的一區域處發射該載氣的一流；及一抽吸構件，與一真空源相關聯，且適以從該消融工具的該輸出衝擊的該表面的該區域收集消融的顆粒；其中該消融工具、該氣體噴射器和該吸引構件彼此相鄰地安裝。
  9. 一種無遮罩薄膜蝕刻的方法，包含以下步驟： 將一消融工具定位在待蝕刻的一表面附近；將一氣體噴射器定位在該消融工具附近，其中該氣體噴射器與載氣的一源相關聯，且適以發射該載氣的一流；及將一抽吸構件定位在該消融工具附近，其中該抽吸構件與一真空源相關聯，且適以收集氣體和顆粒。
  10. 如請求項9所述之方法，其中該消融工具、該氣體噴射器和該抽吸構件安裝在一承載臂上，該方法進一步包括以下步驟：相對於該表面而移動該承載臂。
  11. 如請求項9所述之方法，其中該消融工具是一雷射。
  12. 如請求項9所述之方法，其中該消融工具適以發射一研磨介質。
  13. 如請求項9所述之方法，進一步包含以下步驟：該氣體噴射器在該消融工具的一輸出衝擊的該表面的一區域處發射該載氣的該流。
  14. 如請求項9所述之方法，其中該載氣是為了用以抑制雷射感應電漿的形成的一能力而選擇的一惰性氣體。
  15. 如請求項9所述之方法，進一步包含一控制器，以一預定義的、協調的方式而操作該消融工具、該氣體噴射器和該抽吸構件。
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